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WO2007101099A3 - High-throughput printing of chalcogen layer and the use of an inter-metallic material - Google Patents

High-throughput printing of chalcogen layer and the use of an inter-metallic material Download PDF

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Publication number
WO2007101099A3
WO2007101099A3 PCT/US2007/062694 US2007062694W WO2007101099A3 WO 2007101099 A3 WO2007101099 A3 WO 2007101099A3 US 2007062694 W US2007062694 W US 2007062694W WO 2007101099 A3 WO2007101099 A3 WO 2007101099A3
Authority
WO
WIPO (PCT)
Prior art keywords
group
iiia
chalcogen
elements
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/062694
Other languages
French (fr)
Other versions
WO2007101099A2 (en
Inventor
Duren Jeroen K J Van
Craig R Leidholm
Matthew R Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed by Individual filed Critical Individual
Priority to CN2007800146270A priority Critical patent/CN101443892B/en
Priority to JP2008556559A priority patent/JP2009528680A/en
Priority to EP07757400A priority patent/EP1992010A2/en
Publication of WO2007101099A2 publication Critical patent/WO2007101099A2/en
Publication of WO2007101099A3 publication Critical patent/WO2007101099A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1241—Metallic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)

Abstract

Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IDA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IDA elements in the precursor layer to form a film of a group IB-IIIA- chalcogenide compound. At least one set of the particles in the precursor layer are inter-metallic particles containing at least one group IB-IIIA inter-metallic alloy phase. The method may also include making a film of group IB-IIIA- chalcogenide compound that includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
PCT/US2007/062694 2006-02-23 2007-02-23 High-throughput printing of chalcogen layer and the use of an inter-metallic material Ceased WO2007101099A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007800146270A CN101443892B (en) 2006-02-23 2007-02-23 High-throughput printing of chalcogen layers and use of intermetallic materials
JP2008556559A JP2009528680A (en) 2006-02-23 2007-02-23 High-throughput printing of chalcogen layers and the use of intermetallic materials
EP07757400A EP1992010A2 (en) 2006-02-23 2007-02-23 High-throughput printing of chalcogen layer and the use of an inter-metallic material

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/361,522 2006-02-23
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
US11/395,438 2006-03-30

Publications (2)

Publication Number Publication Date
WO2007101099A2 WO2007101099A2 (en) 2007-09-07
WO2007101099A3 true WO2007101099A3 (en) 2007-11-22

Family

ID=38459748

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/062694 Ceased WO2007101099A2 (en) 2006-02-23 2007-02-23 High-throughput printing of chalcogen layer and the use of an inter-metallic material

Country Status (4)

Country Link
EP (1) EP1992010A2 (en)
JP (1) JP2009528680A (en)
CN (1) CN101443892B (en)
WO (1) WO2007101099A2 (en)

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EP2257970A4 (en) * 2008-03-05 2015-09-02 Hanergy Hi Tech Power Hk Ltd BUFFER LAYER DEPOSITION FOR THIN FILM SOLAR BATTERIES
JP5738600B2 (en) * 2008-03-05 2015-06-24 ハナジー・ハイ−テク・パワー・（エイチケー）・リミテッド Heating for buffer layer deposition
US20100087015A1 (en) 2008-03-05 2010-04-08 Global Solar Energy, Inc. Feedback for buffer layer deposition
JP4540724B2 (en) * 2008-05-20 2010-09-08 昭和シェル石油株式会社 CIS type thin film solar cell manufacturing method
JP5192990B2 (en) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 Copper-gallium alloy sputtering target, method for producing the sputtering target, and related applications
JP2011023520A (en) * 2009-07-15 2011-02-03 Panasonic Electric Works Co Ltd P-type semiconductor film and solar cell
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
JP5144766B2 (en) * 2009-07-27 2013-02-13 Ｊｘ日鉱日石金属株式会社 Cu-Ga sintered compact sputtering target and method for producing the same
US9322939B2 (en) * 2009-09-08 2016-04-26 Koninklijke Philips N.V. Imaging measurement system with a printed photodetector array
JP5639816B2 (en) * 2009-09-08 2014-12-10 東京応化工業株式会社 Coating method and coating apparatus
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same
JP5782672B2 (en) * 2009-11-06 2015-09-24 凸版印刷株式会社 COMPOUND SEMICONDUCTOR THIN FILM INK
KR101271753B1 (en) * 2009-11-20 2013-06-05 한국전자통신연구원 Manufacturing method for thin film type absorber layer, manufacturing method for thin film solar cell using thereof and thin film solar cell
JP2011165790A (en) * 2010-02-08 2011-08-25 Fujifilm Corp Solar cell and method of manufacturing the same
CN101826574A (en) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 Method for making copper-indium-gallium-selenium light-absorbing layer under non-vacuum condition
CN101853885A (en) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 Manufacturing method of slurry of solar absorbing layer, slurry and absorbing layer
CN101820025A (en) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process
CN101820032A (en) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 Method for manufacturing light absorption layer by collocating CuInGaSe slurry under non-vacuum environment
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CN101789470A (en) * 2010-02-12 2010-07-28 昆山正富机械工业有限公司 Method for fabricating CuInGaSe absorbed layer in antivacuum way
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CN101937943A (en) * 2010-08-30 2011-01-05 浙江尚越光电科技有限公司 Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution
CN101944556A (en) * 2010-09-17 2011-01-12 浙江尚越光电科技有限公司 Preparation method of high-uniformity copper-indium-gallium-selenium (CIGS) absorbed layer
WO2012043242A1 (en) * 2010-09-29 2012-04-05 京セラ株式会社 Photoelectric conversion device and method for manufacturing photoelectric conversion device
EP2660871A1 (en) * 2010-12-27 2013-11-06 Toppan Printing Co., Ltd. Compound semiconductor thin film solar cell, and process for production thereof
CN102569514B (en) * 2012-01-04 2014-07-30 中国科学院合肥物质科学研究院 Method for preparing copper indium gallium selenide solar cell optical absorption layer
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Also Published As

Publication number Publication date
JP2009528680A (en) 2009-08-06
CN101443892B (en) 2013-05-01
WO2007101099A2 (en) 2007-09-07
CN101443892A (en) 2009-05-27
EP1992010A2 (en) 2008-11-19

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