[go: up one dir, main page]

WO2007019049A3 - Ensemble d'anneau de bordure a anneau d'ecartement dielectrique - Google Patents

Ensemble d'anneau de bordure a anneau d'ecartement dielectrique Download PDF

Info

Publication number
WO2007019049A3
WO2007019049A3 PCT/US2006/028844 US2006028844W WO2007019049A3 WO 2007019049 A3 WO2007019049 A3 WO 2007019049A3 US 2006028844 W US2006028844 W US 2006028844W WO 2007019049 A3 WO2007019049 A3 WO 2007019049A3
Authority
WO
WIPO (PCT)
Prior art keywords
edge ring
edge
dielectric spacer
ring
ring assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/028844
Other languages
English (en)
Other versions
WO2007019049A2 (fr
Inventor
Jeremy Chang
Andreas Fischer
Babak Kadkhodayan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to KR1020087003093A priority Critical patent/KR101432832B1/ko
Priority to CN200680028968.9A priority patent/CN101238553B/zh
Publication of WO2007019049A2 publication Critical patent/WO2007019049A2/fr
Publication of WO2007019049A3 publication Critical patent/WO2007019049A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49718—Repairing
    • Y10T29/49721—Repairing with disassembling
    • Y10T29/4973—Replacing of defective part

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un ensemble d'anneau de bordure qui entoure une surface de support de substrat dans une chambre de gravure au plasma. Cet ensemble d'anneau de bordure comprend un anneau de bordure et un anneau d'écartement diélectrique. Cet anneau d'écartement diélectrique, qui entoure la surface de support de substrat et qui est entourée par l'anneau de bordure dans la direction radiale, est conçu pour isoler l'anneau de bordure de la plaque de base. L'incorporation de l'ensemble d'anneau de bordure autour de la surface de support de substrat permet de réduire la formation de polymère sur la face inférieure et sur le bord d'un substrat et d'augmenter l'uniformité de gravure au plasma du substrat.
PCT/US2006/028844 2005-08-08 2006-07-24 Ensemble d'anneau de bordure a anneau d'ecartement dielectrique Ceased WO2007019049A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020087003093A KR101432832B1 (ko) 2005-08-08 2006-07-24 유전체 스페이서 링을 갖는 에지 링 어셈블리
CN200680028968.9A CN101238553B (zh) 2005-08-08 2006-07-24 带有介电间隔环的边缘环组件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/198,296 US20070032081A1 (en) 2005-08-08 2005-08-08 Edge ring assembly with dielectric spacer ring
US11/198,296 2005-08-08

Publications (2)

Publication Number Publication Date
WO2007019049A2 WO2007019049A2 (fr) 2007-02-15
WO2007019049A3 true WO2007019049A3 (fr) 2007-12-27

Family

ID=37718175

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/028844 Ceased WO2007019049A2 (fr) 2005-08-08 2006-07-24 Ensemble d'anneau de bordure a anneau d'ecartement dielectrique

Country Status (5)

Country Link
US (3) US20070032081A1 (fr)
KR (1) KR101432832B1 (fr)
CN (1) CN101238553B (fr)
TW (1) TWI417957B (fr)
WO (1) WO2007019049A2 (fr)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US20070059938A1 (en) * 2005-09-15 2007-03-15 Hanako Kida Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon
US7393788B2 (en) * 2006-02-10 2008-07-01 Cook Julie A Method and system for selectively etching a dielectric material relative to silicon
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
WO2009001744A1 (fr) * 2007-06-22 2008-12-31 Ulvac, Inc. Procédé de gravure et appareil de gravure
US7837827B2 (en) * 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
JP5264231B2 (ja) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US8409355B2 (en) * 2008-04-24 2013-04-02 Applied Materials, Inc. Low profile process kit
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
JP5661622B2 (ja) * 2008-07-07 2015-01-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理チャンバで用いるための真空ギャップを備えたプラズマ対向プローブ装置
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
SG169960A1 (en) * 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
KR200464037Y1 (ko) * 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
CN102666917A (zh) * 2009-11-30 2012-09-12 朗姆研究公司 一种带有成角度侧壁的静电卡盘
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US8268184B2 (en) 2010-06-29 2012-09-18 Tokyo Electron Limited Etch process for reducing silicon recess
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8501630B2 (en) 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
US20120318455A1 (en) * 2011-06-14 2012-12-20 Andreas Fischer Passive compensation for temperature-dependent wafer gap changes in plasma processing systems
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
CN103165374B (zh) * 2011-12-08 2017-05-10 中微半导体设备(上海)有限公司 一种等离子体处理装置及应用于等离子处理装置的边缘环
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
CN103187232B (zh) * 2011-12-28 2015-09-16 中微半导体设备(上海)有限公司 一种减少晶片背面生成聚合物的聚焦环
US9252002B2 (en) 2012-07-17 2016-02-02 Applied Materials, Inc. Two piece shutter disk assembly for a substrate process chamber
CA2889415C (fr) 2012-10-24 2020-06-02 Genmark Diagnostics, Inc. Analyse cible a multiplexe integre
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
CN103811247B (zh) * 2014-02-17 2016-04-13 清华大学 用于等离子体刻蚀的聚焦环及具有其的等离子体刻蚀装置
KR101594928B1 (ko) * 2014-03-06 2016-02-17 피에스케이 주식회사 기판 처리 장치 및 방법
SG11201803589QA (en) 2015-11-11 2018-05-30 Greene Tweed Technologies Sealing rings and sealing ring assemblies for high temperature end applications
US10163642B2 (en) * 2016-06-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method and tool of manufacture
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
US9922857B1 (en) 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
US10032661B2 (en) 2016-11-18 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
JP6926225B2 (ja) * 2017-03-31 2021-08-25 マトソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 処理チャンバにおける工作物における材料堆積防止
KR101927936B1 (ko) * 2017-06-09 2018-12-11 세메스 주식회사 기판 처리 장치
SG11202004504VA (en) * 2017-12-15 2020-07-29 Lam Res Corp Ring structures and systems for use in a plasma chamber
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11043406B2 (en) 2018-04-18 2021-06-22 Applied Materials, Inc. Two piece shutter disk assembly with self-centering feature
US11251028B2 (en) 2018-05-12 2022-02-15 Applied Materials, Inc. Pre-clean chamber with integrated shutter garage
JP6859426B2 (ja) * 2018-08-13 2021-04-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ エッジリングの位置決めおよびセンタリング機構を組み込んだプラズマシース調整のための交換可能および／または折りたたみ式エッジリングアセンブリ
CN109767968B (zh) * 2018-12-17 2021-06-08 北京北方华创微电子装备有限公司 下电极结构及反应腔室
CN111354672B (zh) * 2018-12-21 2023-05-09 夏泰鑫半导体(青岛)有限公司 静电卡盘及等离子体加工装置
US10784089B2 (en) * 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
US11018046B2 (en) 2019-04-12 2021-05-25 Samsung Electronics Co., Ltd. Substrate processing apparatus including edge ring
US12480210B2 (en) * 2019-06-18 2025-11-25 Lam Research Corporation Reduced diameter carrier ring hardware for substrate processing systems
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7588609B2 (ja) * 2019-07-01 2024-11-22 アプライド マテリアルズ インコーポレイテッド プラズマカップリング材料の最適化による膜特性の変調
WO2021030184A1 (fr) * 2019-08-14 2021-02-18 Lam Research Corporation Bague de bord mobile pour systèmes de traitement de substrat
KR102116474B1 (ko) * 2020-02-04 2020-05-28 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
CN111681976B (zh) * 2020-07-01 2024-09-27 上海邦芯半导体科技有限公司 感性耦合边缘刻蚀反应装置和边缘刻蚀方法
JP7546456B2 (ja) * 2020-11-13 2024-09-06 東京エレクトロン株式会社 エッジリングおよび基板処理装置
CN113097038B (zh) * 2021-02-25 2022-07-15 长江存储科技有限责任公司 刻蚀装置
US20220293397A1 (en) * 2021-03-10 2022-09-15 Applied Materials, Inc. Substrate edge ring that extends process environment beyond substrate diameter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US20030075274A1 (en) * 1995-09-01 2003-04-24 Halpin Michael W. Wafer support system

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
JPS5911629A (ja) 1982-07-12 1984-01-21 Toshiba Corp 表面清浄化方法
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
WO1997011482A2 (fr) 1995-09-05 1997-03-27 Lsi Logic Corporation Elimination d'halogenes et de vernis photosensible de tranches
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6388226B1 (en) * 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6551939B2 (en) * 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US6149829A (en) * 1998-03-17 2000-11-21 James W. Mitzel Plasma surface treatment method and resulting device
US7014788B1 (en) * 1998-06-10 2006-03-21 Jim Mitzel Surface treatment method and equipment
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6805139B1 (en) * 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6852636B1 (en) * 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6461972B1 (en) * 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6630407B2 (en) * 2001-03-30 2003-10-07 Lam Research Corporation Plasma etching of organic antireflective coating
US6834656B2 (en) * 2001-05-23 2004-12-28 Axcelis Technology, Inc. Plasma process for removing polymer and residues from substrates
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US6838012B2 (en) * 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
TW200416801A (en) * 2003-01-07 2004-09-01 Tokyo Electron Ltd Plasma processing apparatus and focus ring
US8382942B2 (en) * 2003-03-21 2013-02-26 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
TWI488236B (zh) * 2003-09-05 2015-06-11 Tokyo Electron Ltd Focusing ring and plasma processing device
JP4588391B2 (ja) 2004-09-01 2010-12-01 芝浦メカトロニクス株式会社 アッシング方法及びアッシング装置
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030075274A1 (en) * 1995-09-01 2003-04-24 Halpin Michael W. Wafer support system
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing

Also Published As

Publication number Publication date
US20070032081A1 (en) 2007-02-08
US8911589B2 (en) 2014-12-16
KR20080032163A (ko) 2008-04-14
US8500953B2 (en) 2013-08-06
TW200715402A (en) 2007-04-16
CN101238553B (zh) 2014-07-02
CN101238553A (zh) 2008-08-06
TWI417957B (zh) 2013-12-01
US20130292056A1 (en) 2013-11-07
KR101432832B1 (ko) 2014-08-26
WO2007019049A2 (fr) 2007-02-15
US20090186487A1 (en) 2009-07-23

Similar Documents

Publication Publication Date Title
WO2007019049A3 (fr) Ensemble d'anneau de bordure a anneau d'ecartement dielectrique
WO2007030522A3 (fr) Mordançage de couches a forte constante dielectrique avec adjonction de h2
WO2007098071A3 (fr) Injection de gaz réglant le traitement à partir du bord d'un substrat
WO2007100528A3 (fr) Sources d'énergie capacitive et inductive intégrées pour chambre de gravure au plasma
WO2007149694A3 (fr) Appareils, systèmes et procédés pour le nettoyage rapide d'anneaux de confinement de plasma avec une érosion minimale des autres parties de la chambre
WO2009125951A3 (fr) Appareil de traitement au plasma et procédé de traitement au plasma
WO2009082763A3 (fr) Procédé et appareil de régulation de l'uniformité d'un plasma
WO2011081645A3 (fr) Ajustement de la température d'un substrat pour améliorer l'uniformité d'un cd
WO2011146108A3 (fr) Combinaison d'écran de confinement de plasma d'un revêtement de chambre mobile pour des appareils de traitement au plasma
WO2009028480A1 (fr) Procédé de fabrication de dispositif semi-conducteur
WO2010088267A3 (fr) Procédé et appareil de gravure
ATE391339T1 (de) Vakuumbehandlungskammer für sehr grossflächige substrate
WO2011062940A3 (fr) Enceinte de traitement plasma de grande surface à adaptation radiofréquence (rf) sur une électrode at
WO2009075348A1 (fr) Filtre optique, filtre optique pour dispositif d'affichage, dispositif d'affichage comportant un tel filtre, et panneau d'affichage à plasma
WO2007095388A3 (fr) Réacteur de traitement par plasma avec des sources d'énergie capacitives et inductives multiples
WO2007127989A3 (fr) Dispositifs médicaux en polytétrafluoroéthylène expansé (eptfe) mouillables
JP2010527152A5 (fr)
WO2007019467A3 (fr) Traitement d'un substrat semiconducteur au moyen d'un disque dur contenant du carbone depose a basse temperature
WO2008093389A1 (fr) Système de dépôt chimique en phase vapeur (cvd) par plasma micro-ondes
WO2007127371A3 (fr) Suscepteur à fusible multidirectionnel
WO2009006151A3 (fr) Réseaux d'éléments inductifs permettant de réduire au minimum une absence d'uniformité radiale dans un plasma
WO2007094984A3 (fr) ÉLECTRODES AU Si LIÉES À UN ÉLASTOMÈRE ÉTANCHE ET SIMILAIRES POUR RÉDUIRE LA CONTAMINATION PAR PARTICULES DANS LA GRAVURE DIÉLECTRIQUE
TW200741027A (en) Method and apparatus for growing plasma atomic layer
WO2010038976A3 (fr) Dispositif électroluminescent semi-conducteur et son procédé de fabrication
US20160017494A1 (en) Apparatus and method for tuning a plasma profile using a tuning ring in a processing chamber

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200680028968.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020087003093

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06800314

Country of ref document: EP

Kind code of ref document: A2