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WO2007070257A1 - Materiau hote electroluminescent - Google Patents

Materiau hote electroluminescent Download PDF

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Publication number
WO2007070257A1
WO2007070257A1 PCT/US2006/045829 US2006045829W WO2007070257A1 WO 2007070257 A1 WO2007070257 A1 WO 2007070257A1 US 2006045829 W US2006045829 W US 2006045829W WO 2007070257 A1 WO2007070257 A1 WO 2007070257A1
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Prior art keywords
aryl
amine
alkyl
oled device
formula
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Denis Yurievich Kondakov
Tommie Lee Royster Jr.
Christopher Tyler Brown
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Eastman Kodak Co
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Eastman Kodak Co
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Priority to DE602006012097T priority Critical patent/DE602006012097D1/de
Priority to EP06844663A priority patent/EP1981950B1/fr
Priority to KR1020087014085A priority patent/KR101182700B1/ko
Priority to JP2008545627A priority patent/JP2009520354A/ja
Publication of WO2007070257A1 publication Critical patent/WO2007070257A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

Definitions

  • This invention relates to organic electroluminescent (EL) devices containing a light emitting layer including a phosphorescent emitter and a particular aluminum or gallium complex host. More specifically, this invention relates to efficient and low voltage phosphorescent EL devices.
  • EL organic electroluminescent
  • BACKGROUND OF THE INVENTION While organic electroluminescent (EL) devices have been known for over two decades, their performance limitations have represented a barrier to many desirable applications.
  • an organic EL device is comprised of an anode for hole injection, a cathode for electron injection, and an organic medium sandwiched between these electrodes to support charge recombination that yields emission of light. These devices are also commonly referred to as organic light-emitting diodes, or OLEDs.
  • organic EL devices include an organic EL element consisting of extremely thin layers (e.g. ⁇ 1.0 ⁇ m ) between the anode and the cathode.
  • organic EL element encompasses the layers between the anode and cathode electrodes. Reducing the thickness lowered the resistance of the organic layer and has enabled devices that operate at a much lower voltage, hi a basic two-layer EL device structure, described first in US 4,356,429, one organic layer of the EL element adjacent to the anode is specifically chosen to transport holes, therefore, it is referred to as the hole-transporting layer, and the other organic layer is specifically chosen to transport electrons, referred to as the electron-transporting layer.
  • OLED device emit light from their excited singlet state by fluorescence.
  • the excited singlet state is created when excitons formed in an OLED device transfer their energy to the excited state of the dopant.
  • the remaining excitons are triplet, which cannot readily transfer their energy to the singlet excited state of a dopant. This results in a large loss in efficiency since 75% of the excitons are not used in the light emission process.
  • Triplet excitons can transfer their energy to a dopant if it has a triplet excited state that is low enough in energy. If the triplet state of the dopant is emissive it can produce light by phosphorescence. In many cases singlet excitons can also transfer their energy to lowest singlet excited state of the same dopant. The singlet excited state can often relax, by an intersystem crossing process, to the emissive triplet excited state. Thus, it is possible, by the proper choice of host and dopant, to collect energy from both the singlet and triplet excitons created in an OLED device and to produce a very efficient phosphorescent emission.
  • the light-emitting layer is typically composed of a host material and a dopant.
  • Aluminum complexes are not common materials for use as a host material in phosphorescent devices. However their use in combination with a particular electron transporting material has been described in US2004/0124769. An example of an aluminum complex as the entire light-emitting layer has also been disclosed in JP200357588.
  • a hole-blocking layer (HBL) located between the LEL and the ETL is often useful to confine holes to the LEL, to help confine the excitons or electron-hole recombination centers to the light emitting layer.
  • HBL hole-blocking layer
  • a hole-blocking material is bis(2-methyl-8-quinolinolato)(4- phenylphenolato)Aluminum(III) (BaIQ); other aluminum compounds are disclosed in US2005/0019605.
  • the invention provides an OLED device comprising a cathode, an anode, and having therebetween a light-emitting layer containing a phosphorescent emitter and a host comprising a first aluminum or gallium complex containing at least one 2-(2-hydroxyphenyl) pyridine ligand and at least one phenoxy ligand, wherein the phenoxy ligand is substituted by an amine or there is further present adjacent to the light-emitting layer on the cathode side a layer containing a second aluminum or gallium complex containing at least one 2- (2-hydroxyphenyl) pyridine ligand and at least one phenoxy ligand.
  • the devices of the invention exhibit improved luminance efficiency and/or low drive voltage.
  • FIG. 1 shows a cross-section of a schematic of a typical OLED device of the invention.
  • Embodiment A provides an OLED device comprising a cathode, an anode, and having therebetween a light-emitting layer containing a phosphorescent emitter and a host comprising a first aluminum or gallium complex containing at least one 2-(2-hydroxyphenyl) pyridine ligand and at least one phenoxy ligand, wherein there is further present adjacent to the light-emitting layer on the cathode side a layer containing a second aluminum or gallium complex containing at least one 2-(2-hydroxyphenyl) pyridine ligand and at least one phenoxy ligand.
  • the first complex is an aluminum complex.
  • the first and second complexes may be the same compound.
  • the emitter in the light-emitting layer may be an iridium phosphorescent emitter.
  • the first complex is represented by Formula I:
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is 0 to 5.
  • R 2 is a phenyl or aryl amine group.
  • Phenoxypyridine ligands have higher triplet energy than various quinolates such as those in AIq and BAIq. Even higher triplet energies can be achieved by placing substituents, particularly ortho substituents which will induce twisting of the bond between the phenol and pyridine rings of the ligand.
  • the first complex is represented by Formula II:
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is independently 0 to 5.
  • the first complex is represented by Formula III:
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is 0 to 5.
  • the second complex is represented by Formula I:
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is 0 to 5.
  • the second complex is represented by Formula III:
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is 0 to 5.
  • the OLED devices comprises a cathode, an anode, and having therebetween a light-emitting layer containing a phosphorescent emitter and a host comprising a first aluminum or gallium complex containing at least one 2-(2-hydroxyphenyl) pyridine ligand and at least one phenoxy ligand substituted with an amine.
  • the emitter in the light-emitting layer may be an iridium phosphorescent emitter.
  • the amine is selected from pyridine, pyrrole, and indole.
  • the first complex is represented by Formula IV:
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is independently 0 to 5.
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is independently 0 to 5.
  • the second complex may be represented by Formula III:
  • R 1 and R 2 are independently selected from alkyl, aryl, heteroaryl, halogen, aryl amine, alkyl amine, and cyano groups, provided that groups may join together to form fused rings; n is independently 0 to 4; and m is 0 to 5.
  • Embodiments of the invention may provide advantageous features such as operating efficiency, higher luminance, color hue, low drive voltage, and improved operating stability.
  • Embodiments of the organometallic compounds useful in the invention may provide a wide range of hues including those useful in the emission of white light (directly or through filters to provide multicolor displays).
  • substituted or “substituent” means any group or atom other than hydrogen.
  • group when the term “group” is used, it means that when a substituent group contains a substitutable hydrogen, it is also intended to encompass not only the substituent's unsubstituted form, but also its form further substituted with any substituent group or groups as herein mentioned, so long as the substituent does not destroy properties necessary for device utility.
  • a substituent group may be halogen or may be bonded to the remainder of the molecule by an atom of carbon, silicon, oxygen, nitrogen, phosphorous, sulfur, selenium, or boron.
  • the substituent may be, for example, halogen, such as chloro, bromo or fluoro; nitro; hydroxyl; cyano; carboxyl; or groups which may be further substituted, such as alkyl, including straight or branched chain or cyclic alkyl, such as methyl, trifluoromethyl, ethyl, £-butyl, 3-(2,4-dW-pentylphenoxy) propyl, and tetradecyl; alkenyl, such as ethylene, 2-butene; alkoxy, such as methoxy, ethoxy, propoxy, butoxy, 2-methoxyethoxy, sec-butoxy, hexyloxy, 2-ethylhexyloxy, tetradecyloxy, 2-(2,4-di-f-pentylphenoxy)ethoxy, and 2-dodecyloxyethoxy; aryl such as phenyl, 4-t-butylphenyl, 2,4,
  • the substituents may themselves be further substituted one or more times with the described substituent groups.
  • the particular substituents used may be selected by those skilled in the art to attain desirable properties for a specific application and can include, for example, electron- withdrawing groups, electron-donating groups, and steric groups.
  • the substituents may be joined together to form a ring such as a fused ring unless otherwise provided.
  • the above groups and substituents thereof may include those having up to 48 carbon atoms, typically 1 to 36 carbon atoms and usually less than 24 carbon atoms, but greater numbers are possible depending on the particular substituents selected.
  • a coordinate bond is formed when electron rich atoms such as O or N, donate a pair of electrons to electron deficient atoms such as Al or B.
  • Suitable electron donating groups may be selected from -R', -OR', and -NR'(R") where R' is a hydrocarbon containing up to 6 carbon atoms and R" is hydrogen or R'.
  • Specific examples of electron donating groups include methyl, ethyl, phenyl, methoxy, ethoxy, phenoxy, -N(CH 3 ) 2 , -N(CH 2 CH 3 ) 2 , -NHCH 3 , - N(C 6 Hs) 2 , -N(CH 3 )(C 6 H 5 ), and -NHC 6 H 5 .
  • Suitable electron accepting groups may be selected from the group consisting of cyano, oc-haloalkyl, ⁇ -haloalkoxy, amido, sulfonyl, carbonyl, carbonyloxy and oxycarbonyl substituents containing up to 10 carbon atoms. Specific examples include -CN, -F, -CF 3 , -OCF 3 , -CONHC 6 H 5 , -SO 2 C 6 H 5 , - COC 6 H 5 , -CO 2 C 6 H 5 , and -OCOC 6 H 5 .
  • percentage or “percent” and the symbol “%” of a material indicates the volume percent of the material in the layer in which it is present.
  • Compounds. useful in this invention include:
  • the present invention can be employed in many OLED device configurations using small molecule materials, oligomeric materials, polymeric materials, or combinations thereof. These include very simple structures comprising a single anode and cathode to more complex devices, such as passive matrix displays comprised of orthogonal arrays of anodes and cathodes to form pixels, and active-matrix displays where each pixel is controlled independently, for example, with thin film transistors (TFTs).
  • TFTs thin film transistors
  • OLED organic light-emitting diode
  • cathode an organic light-emitting layer located between the anode and cathode. Additional layers may be employed as more fully described hereafter.
  • FIG. 1 A typical structure, especially useful for of a small molecule device, is shown in FIG. 1 and.is comprised of a substrate 101, an anode 103, a hole-injecting layer 105, a hole-transporting layer 107, exciton blocking layer, 108, a light-emitting layer 109, a hole- or exciton-blocking layer 110, an electron- transporting layer 111, and a cathode 113. These layers are described in detail below. Note that the substrate may alternatively be located adjacent to the cathode, or the substrate may actually constitute the anode or cathode.
  • the organic layers between the anode and cathode are conveniently referred to as the organic EL element. Also, the total combined thickness of the organic layers is desirably less than 500 nm.
  • the anode and cathode of the OLED are connected to a voltage/current source 150 through electrical conductors 160.
  • the OLED is operated by applying a potential between the anode and cathode such that the anode is at a more positive potential than the cathode. Holes are injected into the organic EL element from the anode and electrons are injected into the organic EL element at the cathode.
  • Enhanced device stability can sometimes be achieved when the OLED is operated in an AC mode where, for some time period in the cycle, the potential bias is reversed and no current flows.
  • An example of an AC driven OLED is described in US 5,552,678.
  • the OLED device of this invention is typically provided over a supporting substrate 101 where either the cathode or anode can be in contact with the substrate.
  • the substrate can be a complex structure comprising multiple layers of materials. This is typically the case for active matrix substrates wherein TFTs are provided below the OLED layers. It is still necessary that the substrate, at least in the emissive pixilated areas, be comprised of largely transparent materials.
  • the electrode in contact with the substrate is conveniently referred to as the bottom electrode. Conventionally, the bottom electrode is the anode, but this invention is not limited to that configuration.
  • the substrate can either be light transmissive or opaque, depending on the intended direction of light emission. The light transmissive property is desirable for viewing the EL emission through the substrate.
  • Transparent glass or plastic is commonly employed in such cases.
  • the transmissive characteristic of the bottom support can be light transmissive, light absorbing or light reflective.
  • Substrates for use in this case include, but are not limited to, glass, plastic, semiconductor materials, silicon, ceramics, and circuit board materials. It is necessary to provide in these device configurations a light- transparent top electrode.
  • the anode 103 When the desired electroluminescent light emission (EL) is viewed through the anode, the anode 103 should be transparent or substantially transparent to the emission of interest.
  • Common transparent anode materials used in this invention are indium-tin oxide (ITO), indium-zinc oxide (IZO) and tin oxide, but other metal oxides can work including, but not limited to, aluminum- or indium-doped zinc oxide, magnesium-indium oxide, and nickel-tungsten oxide.
  • metal nitrides such as gallium nitride
  • metal selenides such as zinc selenide
  • metal sulfides such as zinc sulfide
  • any conductive material can be used, transparent, opaque or reflective.
  • Example conductors for this application include, but are not limited to, gold, iridium, molybdenum, palladium, and platinum.
  • Typical anode materials, transmissive or otherwise, have a work function of 4.1 eV or greater. Desired anode materials are commonly deposited by any suitable means such as evaporation, sputtering, chemical vapor deposition, or electrochemical means.
  • Anodes can be patterned using well-known photolithographic processes. Optionally, anodes may be polished prior to application of other layers to reduce surface roughness so as to minimize shorts or enhance reflectivity.
  • a hole-injecting layer 105 may be provided between the anode and the hole-transporting layer.
  • the hole-injecting material can serve to improve the film formation property of subsequent organic layers and to facilitate injection of holes into the hole-transporting layer.
  • Suitable materials for use in the hole- injecting layer include, but are not limited to, porphyrinic compounds as described in US 4,720,432, plasma-deposited fluorocarbon polymers as described in US 6,127,004, US 6,208,075 and US 6,208,077, some aromatic amines, for example, MTDATA (4,4',4"-tris[(3-methylphenyl)phenylamino]triphenylarnine), and inorganic oxides including vanadium oxide (VOx), molybdenum oxide (MoOx), and nickel oxide (NiOx).
  • VOx vanadium oxide
  • MoOx molybdenum oxide
  • NiOx nickel oxide
  • a hole injection layer containing a plasma- deposited fluorocarbon polymer can be in the range of 0.2 nm to IS nm and suitably in the range of 0.3 to 1.5 nm.
  • a hole transporting material deposited in said hole transporting layer between the anode and the light emitting layer may be the same or different from a hole transporting compound used as a co-host or in exciton blocking layer according to the invention.
  • the hole transporting layer may optionally include a hole injection layer.
  • the hole transporting layer may include more than one hole transporting compound, deposited as a blend or divided into separate layers.
  • the hole-transporting layer contains at least one hole-transporting compound such as an aromatic tertiary amine, where the latter is understood to be a compound containing at least one trivalent nitrogen atom that is bonded only to carbon atoms, at least one of which is a member of an aromatic ring.
  • the aromatic tertiary amine can be an aryl amine, such as a monoaryl amine, diarylamine, triarylamine, or a polymeric arylamine. Exemplary monomelic triarylamines are illustrated by Klupfel et al. U.S. Patent No. 3, 180,730.
  • Other suitable triarylamines substituted with one or more vinyl radicals and/or comprising at least one active hydrogen containing group are disclosed by Brantley et al U.S. Patent Nos. 3,567,450 and 3,658,520.
  • a more preferred class of aromatic tertiary amines is those which include at least two aromatic tertiary amine moieties as described in US 4,720,432 and US 5,061,569.
  • Such compounds include those represented by structural formula (HTl):
  • Qi and Q 2 are independently selected aromatic tertiary amine moieties
  • G is a linking group such as an arylene, cycloalkylene, or alkylene group of a carbon to carbon bond.
  • at least one of Qi or Q 2 contains a polycyclic fused ring structure, e.g., a naphthalene.
  • G is an aryl group, it is conveniently a phenylene, biphenylene, or naphthalene moiety.
  • a useful class of triarylamines satisfying structural formula (HTl) and containing two triarylamine moieties is represented by structural formula (HT2):
  • Ri and R 2 each independently represents a hydrogen atom, an aryl group, or an alkyl group or Ri and R 2 together represent the atoms completing a cycloalkyl group; and R 3 and R 4 each independently represents an aryl group, which is in turn substituted with a diaryl substituted amino group, as indicated by structural formula (HT3):
  • R 5 and R 6 are independently selected aryl groups.
  • at least one of R 5 or R $ contains a polycyclic fused ring structure, e.g., a naphthalene.
  • Another class of aromatic tertiary amines is the tetraaryldiamines.
  • Desirable tetraaryldiamines include two diarylamino groups, such as indicated by formula (HT3), linked through an arylene group.
  • Useful tetraaryldiamines include those represented by formula (HT4):
  • each Are is an independently selected arylene group, such as a phenylene or anthracene moiety, n is an integer of from 1 to 4, and
  • Ri, R 2 , R 3 , and R 4 are independently selected aryl groups.
  • at least one of Ri, R 2 , R 3 , and R 4 is a polycyclic fused ring structure, e.g., a naphthalene.
  • the various alkyl, alkylene, aryl, and arylene moieties of the foregoing structural formulae (HTl), (HT2), (HT3), (HT4) can each in turn be substituted.
  • Typical substituents include alkyl groups, alkoxy groups, aryl groups, aryloxy groups, and halide such as fluoride, chloride, and bromide.
  • the various alkyl and alkylene moieties typically contain from 1 to 6 carbon atoms.
  • the cycloalkyl moieties can contain from 3 to 10 carbon atoms, but typically contain five, six, or seven ring carbon atoms, such as cyclopentyl, cyclohexyl, and cycloheptyl ring structures.
  • the aryl and arylene moieties are usually phenyl and phenylene moieties.
  • the hole transporting layer can be formed of a single tertiary amine compound or a mixture of such compounds. Specifically, one may employ a triarylamine, such as a triarylamine satisfying the formula (HT2), in combination with a tetraaryldiamine, such as indicated by formula (HT4).
  • a triarylamine such as a triarylamine satisfying the formula (HT2)
  • a tetraaryldiamine such as indicated by formula (HT4).
  • NPB 4,4'-Bis[N-(l -naphthyl)-N-phenylamino]biphenyl
  • TPD 4,4'-Bis[N-(3-methylphenyl)-N-phenylamino]biphenyl
  • TPD 4,4'-Bis[N-(l -naphthyl)-N-(2-naphthyl)amino]biphenyl
  • TBN 4,4'-Bis[N-(l-naphthyl)-N-phenylamino]p-terphenyl
  • Another class of useful hole-transporting materials includes polycyclic aromatic compounds as described in EP 1 009 041. Some hole-injecting materials described in EP 0 891 121 Al and EP 1 029 909 Al, can also make useful hole-transporting materials.
  • polymeric hole-transporting materials can be used including poly(N-vinylcarbazole) (PVK), polythiophenes, polypyrrole, polyaniline, and copolymers including ⁇ oly(3 ,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) also called PEDOTVPSS.
  • An OLED device may include one or more exciton blocking layers, 108 (FIG. 1), placed adjacent the light emitting layer 109 on the anode side, to help confine triplet excitons to the light emitting layer.
  • the exciton blocking layer to be capable of confining triplet excitons.
  • the material or materials of this layer should have triplet energies that exceed that of the phosphorescent emitter. If the triplet energy level of any material in the layer adjacent the light emitting layer is lower than that of the phosphorescent emitter, often that material will quench excited states in the light emitting layer, decreasing device luminous efficiency.
  • the exciton blocking layer also helps to confine electron-hole recombination events to the light emitting layer by blocking the escape of electrons from the light emitting layer into the exciton blocking layer.
  • the material of this layer should have a lowest unoccupied molecular orbital (LUMO) energy level that is greater than that of the host material in the light emitting layer by at least 0.2 e.V.
  • the LUMO energy level of the exciton block should be greater by at least 0.2 eV than that of the host material having the lowest LUMO energy level in order to have the preferred electron blocking property.
  • the relative energy levels of the highest occupied molecular orbital (HOMO) and the LUMO of materials may be estimated by several methods known in the art. When comparing energy levels of two materials, it is important to use estimated energy levels obtained by the same method for each.
  • Two methods for estimating the HOMO energy level include measuring the ionization potential of the material by ultraviolet photoelectron spectroscopy and measuring the oxidation potential by an electrochemical technique such as cyclic voltammetry.
  • the LUMO energy level may then be estimated by adding the optical band gap energy to the previously determined HOMO energy level.
  • the optical band gap is estimated to be the energy difference between the LUMO and the HOMO.
  • the relative LUMO energy levels of materials may also be estimated from reduction potentials of the materials measured in solution by an electrochemical technique such as cyclic voltammetry. We have found that luminous yield and power efficiency in the
  • OLED device employing a phosphorescent emitter in the light emitting layer can be improved significantly if the selected exciton blocking material or materials have a triplet energy greater or equal to 2.5 eV, especially for the case of green or blue-emitting phosphorescent emitters. .
  • the exciton blocking layer is often between 1 and 500 nm thick and suitably between 10 and 300 nm thick. Thicknesses in this range are relatively easy to control in manufacturing.
  • the exciton blocking layer 108 must be capable of transporting holes to the light emitting layer 109.
  • Exciton blocking layer 108 can be used alone or with a hole-transporting layer 107.
  • the exciton blocking layer may include more than one compound, deposited as a blend or divided into separate layers.
  • a hole transporting compound used as a host or co-host
  • a hole transporting material deposited in the exciton blocking layer between the anode and the light emitting layer may be the same or different from the hole transporting compound, used as a host or co-host.
  • the exciton blocking material can comprise compounds containing one or more triarylamine groups, provided that their triplet energy exceeds that of the phosphorescent material. In a preferred embodiment the triplet energy is greater or equal to 2.5 eV. To meet the triplet energy requirement for the preferred embodiment of 2.5 eV or greater, said compounds should not contain aromatic hydrocarbon fused rings (e.g., a naphthalene group).
  • the substituted triarylamines that function as the exciton blocking material in the present invention may be selected from compounds having the chemical formula (EBF-I):
  • R 1 -R 4 are independently selected aryl groups; n is an integer of from 1 to 4.
  • Are and R 1 - R 4 do not include aromatic hydrocarbon fused rings.
  • Example materials useful in the exciton blocking layer 108 include, but are not limited to:
  • the material in the exciton blocking layer is selected from formula (EBF-2):
  • Ri and R 2 represent substituents, provided that Ri and R 2 can join to form a ring.
  • Ri and R 2 can be methyl groups or join to form a cyclohexyl ring.
  • ATi-Ar 4 represent independently selected aromatic groups, for example phenyl groups or tolyl groups.
  • R3-R10 independently represent hydrogen, alkyl, substituted alkyl, aryl, substituted aryl group.
  • Ri-R 2 , Ari-Ar 4 and R3 - Rio do not contain fused aromatic rings.
  • TAPC l,l-Bis(4-(N, N-di-j5-tolylamino)phenyl)cyclohexane
  • 1 1 -Bis(4-(N, N-di-/?-tolylamino)phenyl)cyclopentane
  • TAPC l,l-Bis(4-(N, N-di-j
  • the exciton blocking material comprises a material of formula (EBF-3):
  • n is an integer from 1 to 4.
  • Q is N, C, aryl, or substituted aryl group
  • Ri is phenyl, substituted phenyl, biphenyl, substituted biphenyl, aryl or substituted aryl;
  • R 2 through R 7 are independently hydrogen, alkyl, phenyl or substituted phenyl, aryl amine, carbazole, or substituted carbazole; provided that R 2 — R 7 do not contain aromatic hydrocarbon fused rings.
  • the exciton blocking material comprises a material of formula (EBF-4):
  • n is an integer from 1 to 4.
  • Q is phenyl, substituted phenyl, biphenyl, substituted biphenyl, aryl, or substituted aryl group;
  • R 1 through R 6 are independently hydrogen, alkyl, phenyl or substituted phenyl, aryl amine, carbazole, or substituted carbazole; provided that R 1 — Re do not contain aromatic hydrocarbon fused rings.
  • Non-limiting examples of suitable materials are: 9,9'-(2,2'-dimethyl[l ,1 1 -biphenyl]-4,4 l -diyl)bis-9H-carbazole (CDBP); 9,9'-[ 1 , 1 '-biphenyl] -4,4'-diylbis-9H-carbazole (CBP); 9,9'-(l ,3-phenylene)bis-9H-carbazole (mCP); 9,9'-( 1 ,4-phenylene)bis-9H-carbazole; 9,9',9"-(l,3,5-benzenetriyl)tris-9H-carbazole;
  • Metal complexes may also serve as exciton blocking layers as long as they have the desired triplet energies and hole transport and electron blocking properties.
  • An example of this is, fac-tris(l-phenylpyrazolato-N,C 2)iridium(III) (Ir(ppz) 3 ), as described in US 20030175553.
  • Light-Emitting Layer (LELt) is described in US 20030175553.
  • the light-emitting layer of the OLED device comprises one or more host materials and one or more guest materials for emitting light. At least one of the guest materials is suitably a fluorescent or phosphorescent material.
  • the light-emitting guest material(s) is usually present in an amount less than the amount of host materials and is typically present in an amount of up to 20 wt % of the host, more typically from 0.1-10 wt % of the host
  • the light-emitting guest material may be referred to as a light emitting dopant.
  • a phosphorescent guest material may be referred to herein as a phosphorescent material, or phosphorescent dopant.
  • the phosphorescent material is preferably a low molecular weight compound, but it may also be an oligomer or a polymer. It may be provided as a discrete material dispersed in the host material, or it may be bonded in some way to the host material, for example, covalently bonded into a polymeric host.
  • Fluorescent materials may be used in the same layer as the phosphorescent material, in adjacent layers, in adjacent pixels, or any combination. Care must be taken to select materials that will not adversely affect the performance of the phosphorescent materials of this invention. One skilled in the art will understand that concentrations and triplet energies of materials in the same layer as the phosphorescent material or in an adjacent layer must be appropriately set so as to prevent unwanted quenching of the phosphorescence.
  • Suitable host materials have a triplet energy (the difference in energy between the lowest triplet excited state and the singlet ground state of the host) that is greater than or equal to the triplet energy of the phosphorescent emitter. This energy level state is necessary so that triplet excitons are transferred to the phosphorescent emitter molecules and any triplet excitons formed directly on the phosphorescent emitter molecules remain until emission occurs.
  • triplet energy is conveniently measured by any of several means, as discussed for instance in S. L. Murov, I. Carmichael, and G. L. Hug, Handbook of Photochemistry , 2nd ed. (Marcel Dekker, New York, 1993).
  • the triplet state energy for a molecule is defined as the difference between the ground state energy (E(gs)) of the molecule and the energy of the lowest triplet state (E(ts)) of the molecule, both given in eV.
  • E(gs) ground state energy
  • E(ts) energy of the lowest triplet state
  • eV energy of the lowest triplet state
  • These energies can be calculated using the B3LYP method as implemented in the Gaussian98 (Gaussian, Inc., Pittsburgh, PA) computer program.
  • the basis set for use with the B3LYP method is defined as follows: MIDI! for all atoms for which MIDI!
  • Equation 1 Equation 1
  • Desirable host materials are capable of forming a continuous film.
  • the light-emitting layer may contain more than one host material in order to improve the device's film morphology, electrical properties, light emission efficiency, and lifetime.
  • Suitable host materials are described in WO00/70655; WO01/39234; WO01/93642; WO02/074015; WO02/15645, and US20020117662.
  • Types of triplet host materials may be categorized according to their charge transport properties. The two major types are those that are predominantly electron-transporting and those that are predominantly hole- transporting. It should be noted that some host materials which may be categorized as transporting dominantly one type of charge, may transport both types of charges, especially in certain device structures, for example CBP which is described in C.
  • Another type of host are those having a wide energy gap between the HOMO and LUMO such that they do not readily transport charges of either type and instead rely on charge injection directly into the phosphorescent dopant molecules.
  • a desirable electron transporting host may be any suitable electron transporting compound, such as benzazole, phenanthroline, 1,3,4-oxadiazole, triazole, triazine, or triarylborane, as long as it has a triplet energy that is higher than that of the phosphorescent emitter to be employed.
  • a preferred class of benzazoles is described by Jianmin Shi et al. in US 5,645,948 and US 5,766,779. Such compounds are represented by structural formula (PHF- 1):
  • n is selected from 2 to 8; Z is independently O, NR or S;
  • R and R' are individually hydrogen; alkyl of from 1 to 24 carbon atoms, for example, propyl, t-butyl, heptyl, and the like; aryl or hetero-atom substituted aryl of from 5 to 20 carbon atoms, for example, phenyl and naphthyl, furyl, thienyl, pyridyl, quinolinyl and other heterocyclic systems; or halo such as chloro, fluoro; or atoms necessary to complete a fused aromatic ring; and
  • X is a linkage unit consisting of carbon, alkyl, aryl, substituted alkyl, or substituted aryl, which conjugately or unconjugately connects the multiple benzazoles together.
  • auseful benzazole is 2,2',2"-(l,3,5- phenylene)tris[ 1 -phenyl- 1 H-benzimidazole] (TPBI) represented by a formula (PHF-2) shown below:
  • PPF-3 Another class of the electron transporting materials suitable for use as a host includes various substituted phenanthrolines as represented by formula (PHF-3):
  • Ri-R 8 are independently hydrogen, alkyl group, aryl or substituted aryl group, and at least one of Ri-R 8 is aryl group or substituted aryl group.
  • suitable materials are 2,9-dimethyl-4,7-diphenyl-phenanthroline (BCP) (see formula (PH-I)) and 4,7-diphenyl-l,10-phenanthroline (Bphen) (see formula (PH-2)).
  • a triarylboranes that functions as an electron transporting host may be selected from compounds having the chemical formula (PHF-4): Ar.
  • Ari to Ar 3 are independently an aromatic hydrocarbocyclic group or an aromatic heterocyclic group which may have one or more substituent. It is preferable that compounds having the above structure are selected from formula (PHF-5):
  • R 1 -R 15 are independently hydrogen, fluoro, cyano, trifluoromethyl, sulfonyl, alkyl, aryl or substituted aryl group.
  • An electron transporting host may be selected from substituted 1,3,4-oxadiazoles.
  • Illustrative of the useful substituted oxadiazoles are the following:
  • An electron transporting host may be selected from substituted 1 ,2,4-triazoles.
  • An example of a useful triazole is 3-phenyl-4-(l -naphtyl)-5- phenyl-l,2,4-triazole represented by formula (PHF-6):
  • the electron transporting host may be selected from substituted 1,3,5-triazines.
  • suitable materials are: 2,4,6-tris(diphenylamino)-l,3,5-triazine; 2,4,6-tricarbazolo- 1 ,3,5-triazine; 2,4,6-tris ⁇ N-phenyl-2-naphthylamino)- 1 ,3,5-triazine; 2,4,6-tris(N-phenyl- 1 -naphthylamino)- 1 ,3 ,5-triazine; 4,4',6,6'-tetraphenyl-2,2'-bi- 1 ,3,5-triazine; 2 ,4,6-tris([l ,r:3',l "-te ⁇ henyll-S'-yl)-! ,3,5-triazine.
  • a suitable host material is an aluminum or gallium complex.
  • Particularly useful hosts materials are represented by Formula (PHF-7).
  • M 1 represents Al or Ga.
  • R 2 - R 7 represent hydrogen or an independently selected substituent.
  • R 2 represents an electron-donating group, such as a methyl group.
  • R 3 and R 4 each independently represent hydrogen or an electron donating substituent.
  • Rs, Re, and R 7 each independently represent hydrogen or an electron-accepting group. Adjacent substituents, R 2 - R 7 , may combine to form a ring group.
  • L is an aromatic moiety linked to the aluminum by oxygen, which may be substituted with substituent groups such that L has from 6 to 30 carbon atoms.
  • a desirable hole transporting host may be any suitable hole transporting compound, such as a triarylamine or a carbazole, as long it has a triplet energy higher than that of the phosphorescent emitter to be employed.
  • a suitable class of hole transporting compounds for use as a host are aromatic tertiary amines, by which it is understood to be compounds containing at least one trivalent nitrogen atom that is bonded only to carbon atoms, at least one of which is a member of an aromatic ring.
  • the aromatic tertiary amine can be an arylamine, such as a monoarylamine, diarylamine, triarylamine, or a polymeric arylamine. Exemplary mon ⁇ meric triarylamines are illustrated by Klupfel et al. in US 3,180,730.
  • Other suitable triarylamines substituted with one or more vinyl radicals and/or comprising at least one active hydrogen containing group are disclosed by Brantley et al. in US 3,567,450 and US 3,658,520
  • a more preferred class of aromatic tertiary amines are those which include at least two aromatic tertiary amine moieties as described in US 4,720,432 and US 5,061,569. Such as the tetraaryldiamines. Desirable tetraaryldiamines include two diarylamino groups, such as indicated by formula (PHF-8):
  • each Are is an independently selected arylene group, such as a phenylene or anthracene moiety
  • n is selected from 1 to 4
  • R1-R 4 are independently selected aryl groups.
  • At least one OfR 1 -R 4 is a polycyclic fused ring structure, e.g., a naphthalene.
  • a polycyclic fused ring structure e.g., a naphthalene.
  • an aryl amine host material to have a polycyclic fused ring substituent.
  • Representative examples of the useful compounds include the following:
  • NPB 4,4'-Bis[N-(l -naphthyl)-N-phenylamino]biphenyl
  • TPD 4,4'-Bis[N-(3 -methyIphenyl)-N-phenyl amino]biphenyl
  • TPD 4,4'-Bis-diphenylamino-terphenyl
  • the hole transporting host comprises a material of formula (PHF-9):
  • Ri and R 2 represent substituents, provided that Ri and R 2 can join to form a ring.
  • R] and R 2 can be methyl groups or join to form a cyclohexyl ring;
  • ATi-Ar 4 represent independently selected aromatic groups, for example phenyl groups or tolyl groups; R 3 -R] 0 independently represent hydrogen, alkyl, substituted alkyl, aryl, substituted aryl group.
  • suitable materials include, but are not limited to: l,l-Bis(4-(N, N-di-/>-tolylamino)phenyl)cyclohexane (TAPC); 1 , 1 -Bis(4-(N, N-di-/7-tolylamino)phenyl)cyclopentane; 4,4'-(9H-fluoren-9-ylidene)bis[N,N-bis(4-methylphenyl)-benzenamine; 1 ,1 -Bis(4-(N, N-di-j9-tolylamino)phenyl)-4-phenylcyclohexane; 1 , T-Bis(4-(N, N-di-p-tolylamino)phenyl)-4-methylcyclohexane; l,l-Bis(4-(N, N-di-/7-tolylamino)phenyl)-3-phenylpropane; Bis[4-(
  • a useful class of compounds for use as the hole transporting host includes carbazole derivatives such as those represented by formula (PHF-10):
  • Q independently represents nitrogen, carbon, silicon, a substituted silicon group, an aryl group, or substituted aryl group, preferably a phenyl group;
  • Ri is preferably an aryl or substituted aryl group, and more preferably a phenyl group, substituted phenyl, biphenyl, substituted biphenyl group;
  • R 2 through R 7 are independently hydrogen, alkyl, phenyl or substituted phenyl group, aryl amine, carbazole, or substituted carbazole; and n is selected from 1 to 4.
  • Illustrative useful substituted carbazoles are the following: 4-(9H-carbazol-9-yl)-N,N-bis[4-(9H-carbazol-9-yl)phenyl]-benzenamine (TCTA);
  • the hole transporting host comprises a material of formula (PHF- 11):
  • n is selected from 1 to 4.
  • Q independently represents phenyl group, substituted phenyl group, biphenyl, substituted biphenyl group, aryl, or substituted aryl group;
  • Ri through KQ are independently hydrogen, alkyl, phenyl or substituted phenyl, aryl amine, carbazole, or substituted carbazole.
  • suitable materials are the following:
  • CBP 9,9'-[l,l '-biphenyl]-4,4'-diylbis-9H-carbazole
  • Host materials which are electron transporting or hole transporting with some electron transporting properties are generally more desirable when used as a single host material. This is especially true for typical phosphorescent dopants that are hole-trapping or capable of accepting injected holes. Less preferable are host materials which are primarily hole transporting and have little electron transporting properties, such as triarlyamines. Iinjecting electrons into these latter hole transporting hosts may be difficult because of their relatively high LUMO energies.
  • Host materials may comprise a mixture of two or more host materials. Particularly useful is a mixture comprising at least one each of an electron-transporting and a hole-transporting co-host.
  • the optimum concentration of the hole transporting co-host(s) may be determined by experimentation and may be within the range 10 to 60 weight % of the total of the hole- and electron transporting co-host materials in the light emitting layer, and is often found to be in the range 15 to 30 wt. %, It is further noted that electron-transporting molecules and hole-transporting molecules may be covalently joined together to form single host molecules having both electron-transporting and hole- transporting properties.
  • a wide energy gap host material may be any suitable compound having a large HOMO-LUMO gap such that the HOMO and LUMO of the phosphorescent emissive material are within the HOMO and LUMO for the host.
  • the phosphorescent emissive material acts as the primary charge carrier for both electrons and holes, as well as the site for the trapping of excitons.
  • the phosphorescent dopants for use with the wide energy gap hosts are selected to have electron-withdrawing substituents to facilitate electron injection.
  • the "wide energy gap" host material functions as a non-charge carrying material in the system. Such a combination may lead to high operation voltage of the device, as the concentration of the charge-carrying dopant is typically below 10% in the emissive layer. Thompson et al. disclosed in US 2004/0209115 and US
  • X is Si or Pb;
  • Arj, Ar 2 , Ar 3 and Ar 4 are each an aromatic group independently selected from phenyl and high triplet energy heterocyclic groups such as pyridine, pyrazole, thiophene, etc. It is believed that the HOMO-LUMO gaps in these materials is large due to the electronically isolated aromatic units, and the lack of any conjugating substituents.
  • Illustrative examples of this type of hosts include:
  • Phosphorescent materials may be used singly or in combination with other phosphorescent materials, either in the same or different layers. Some other phosphorescent materials are described in WO 00/57676, WO 00/70655, WO 01/41512, WO 02/15645, US 2003/0017361, WO 01/93642, WO 01/39234, US 6,458,475, WO 02/071813, US 6,573,651, US 2002/0197511, WO 02/074015, US 6,451,455, US 2003/0072964, US 2003/0068528, US 6,413,656, US 6,515,298, US 6,451,415, US 6,097,147, US 2003/0124381, US 2003/0059646, US 2003/0054198, EP 1 239 526, EP 1 238 981, EP 1 244 155, US 2002/0100906, US 2003/0068526, US 2003/0068535, JP 2003073387, JP 2003073388, US 2003/01418
  • the optimum concentration of the phosphorescent dopant for luminous efficiency is found to be 1 to 20 vol% and often 6 to 8 vol % relative to the host material.
  • the host comprises at least one electron-transporting co-host and at least one hole-transporting co-host in the light-emitting layer
  • a phosphorescent material concentration from 0.5% to 6% often provides high luminous efficiencies.
  • the emission wavelengths of cyclometallated Ir(IIl) complexes of the type IrL 3 and IrL 2 L' such as the green-emitting j&c-tris(2-phenylpyridinato- N,C 2 )Iridium(III) (Ir(ppy) 3 ) and bis(2-phenylpyridinato- N,C 2 )Iridium(HI)(acetylacetonate) may be shifted by substitution of electron donating or withdrawing groups at appropriate positions on the cyclometallating ligand L, or by choice of different heterocycles for the cyclometallating ligand L.
  • the emission wavelengths may also be shifted by choice of the ancillary ligand L'.
  • red emitters are the bis(2-(2 * -benzothienyl)pyridinato- N,C 3 )Iridium(III)(acetylacetonate) and tris(2-phenylisoquinolinato-
  • N,C)Iridium(III N,C)Iridium(III).
  • a blue-emitting example is bis(2-(4,6-diflourophenyl)- pyridinato-N,C 2 )Iridium(III)(picolinate).
  • Pt(II) complexes such as cis-bis(2-phenylpyridinato-N,C 2 )platu ⁇ u ⁇ n(H), cis-bis(2- (2'-thienyl)pyridinato-N,C 3' ) platinum(II), cis-bis(2-(2'-thienyl)quinolinato-N,C 5' ) platinum(II), or (2-(4,6-diflourophenyl)pyridinato-NC2') platinum (II) acetylacetonate.
  • Pt(II) porphyrin complexes such as 2,3,7,8,12,13, 17,18-octaethyl- 2 IH, 23H-porphine platinum(II) are also useful phosphorescent materials.
  • Still other examples of useful phosphorescent materials include coordination complexes " of the trivalent lanthanides such as Tb 3+ and Eu 3+ (J. Kido et al, Appl. Phys. Lett., 65, 2124 (1994))
  • an OLED device employing a phosphorescent material often requires at least one exciton or hole blocking layer to help confine the excitons or electron-hole recombination centers to the light emitting layer comprising the host and phosphorescent material.
  • a blocking layer 110 would be placed between the electron transporting layer and the light emitting layer — see Fig 1.
  • the ionization potential of the blocking layer should be such that there is an energy barrier for hole migration from the light emitting layer into the electron- transporting layer, while the electron affinity should be such that electrons pass readily from the electron transporting layer into the light emitting layer.
  • the triplet energy of the blocking material be greater than that of the phosphorescent material.
  • Suitable hole blocking materials are described in WO 00/70655 and WO 01/93642.
  • Two examples of useful materials are bathocuproine (BCP) and bis(2-methyl-8- quinoIinolato)(4-phenylphenolato)Aluminum(III) (BAlQ).
  • BCP bathocuproine
  • BAlQ bis(2-methyl-8- quinoIinolato)(4-phenylphenolato)Aluminum(III)
  • Metal complexes other than BAlQ are also known to block holes and excitons as described in US 20030068528.
  • US 20030175553 describes the use of fac-tris(l -phenylpyrazolato- N,C 2)iridium(III) (Irppz) in an electron/exciton blocking layer.
  • ETL Electron-Transporting Layer
  • the electron transporting material deposited in said electron transporting layer between the cathode and the light emitting layer may be the same or different from an electron transporting co-host material.
  • the electron transporting layer may include more than one electron transporting compound, deposited as a blend or divided into separate layers.
  • Preferred thin film-forming materials for use in constructing the electron transporting layer of the organic EL devices of this invention are metal- chelated oxinoid compounds, including chelates of oxine itself (also commonly referred to as 8-quinolinol or 8-hydroxyquinoline). Such compounds help to inject and transport electrons, exhibiting high levels of performance, and are readily fabricated in the form of thin films.
  • Exemplary of contemplated oxinoid compounds are those satisfying structural formula (ETl) below:
  • M represents a metal
  • n is an integer of from 1 to 4.
  • Z independently in each occurrence represents the atoms completing a nucleus having at least two fused aromatic rings.
  • the metal can be monovalent, divalent, trivalent, or tetravalent metal.
  • the metal can, for example, be an alkali metal, such as lithium, sodium, or potassium; an alkaline earth metal, such as magnesium or calcium; an earth metal, such aluminum or gallium, or a transition metal such as zinc or zirconium.
  • alkali metal such as lithium, sodium, or potassium
  • alkaline earth metal such as magnesium or calcium
  • earth metal such aluminum or gallium, or a transition metal such as zinc or zirconium.
  • any monovalent, divalent, trivalent, or tetravalent metal known to be a useful chelating metal can be employed.
  • Z completes a heterocyclic nucleus containing at least two fused aromatic rings, at least one of which is an azole or azine ring. Additional rings, including both aliphatic and aromatic rings, can be fused with the two required rings, if required. To avoid adding molecular bulk without improving on function the number of ring atoms is usually maintained at 18 or less.
  • Illustrative of useful chelated oxinoid compounds are the following:
  • CO-I Aluminum trisoxine [alias, tris(8-quinolinolato)aluminum(III); AIq];
  • CO-2 Magnesium bisoxine [alias, bis(8-quinolinolato)magnesium(II)];
  • CO-3 Bis[benzo ⁇ f ⁇ -8-quinolinolato]zinc (II);
  • CO-4 Bis(2-methyl-8-q ⁇ inolinolato)aluminum(III)- ⁇ -oxo-bis(2-methyl-8- quinolinolato) aluminum(III);
  • CO-5 Indium trisoxine [alias, tris(8-quinolinolato)indium]
  • CO-6 Aluminum tris(5-methyloxine) [alias, tris(5-methyl-8-quinolinolato) aluminum(III)];
  • CO-7 Lithium oxine [alias, (8-quinolinolato)lithium(I)]; CO-8: Gallium oxine [alias, tris(8-quinolinolato)gallium(III)]; CO-9: Zirconium oxine [alias, tetra(8-quinolinolato)zirconium(IV)].
  • electron transporting materials suitable for use in the electron transporting layer include various butadiene derivatives as disclosed in US 4,356,429 and various heterocyclic optical brighteners as described in US 4,539,507.
  • Benzazoles satisfying structural formula (ET2) are also useful electron transporting materials:
  • n is an integer of 3 to 8;
  • Z is O, NR or S;
  • R and R' are individually hydrogen; alkyl of from 1 to 24 carbon atoms, for example, propyl, t-butyl, heptyl, and the like; aryl or hetero-atom substituted aryl of from 5 to 20 carbon atoms for example phenyl and naphthyl, furyl, thienyl, pyridyl, quinolinyl and other heterocyclic systems; or halo such as chlqro, fluoro; or atoms necessary to complete a fused aromatic ring; and
  • X is a linkage unit consisting of carbon, alkyl, aryl, substituted alkyl, or substituted aryl, which conjugately or unconjugately connects the multiple benzazoles together.
  • An example of a useful benzazole is 2, 2', 2"-(l > 3,5- phenylene)tris[l-phenyl-lH-benzimidazole] (TPBI) disclosed in Shi et al. in US 5,766,779.
  • electron transporting materials suitable for use in the electron transporting layer may be selected from triazines, triazoles, imidazoles, oxazoles, thiazoles and their derivatives, polybenzob ⁇ sazoles, pyridine- and quinoline-based materials, cyano-containing polymers and perfluorinated materials.
  • the electron transporting layer or a portion of the electron transporting layer adjacent the cathode may further be doped with an alkali metal to reduce electron injection barriers and hence lower the drive voltage of the device.
  • alkali metals for this purpose include lithium and cesium.
  • the cathode used in this invention can be comprised of nearly any conductive material. Desirable materials have good film-forming properties to ensure good contact with the underlying organic layer, promote electron injection at low voltage, and have good stability. Useful cathode materials often contain a low work function metal ( ⁇ 4.0 eV) or metal alloy.
  • One useful cathode material is comprised of a Mg: Ag alloy wherein the percentage of silver is in the range of 1 to 20 %, as described in U.S. Patent No. 4,885,221.
  • cathode materials includes bilayers comprising a thin electron-injection layer (EIL) in contact with an organic layer (e.g., an electron transporting layer (ETL)) which is capped with a thicker layer of a conductive metal.
  • EIL electron-injection layer
  • the EIL preferably includes a low work function metal or metal salt, and if so, the thicker capping layer does not need to have a low work function.
  • One such cathode is comprised of a thin layer of LiF followed by a thicker layer of Al as described in U.S. Patent No. 5,677,572.
  • An ETL material doped with an alkali metal for example, Li-doped AIq, as disclosed in U.S. Patent No. 6,013,384, is another example of a useful EIL.
  • Other useful cathode material sets include, but are not limited to, those disclosed in U.S. Patent Nos. 5,059,861 , 5,059,862, and 6,140,763.
  • the cathode When light emission is viewed through the cathode, the cathode must be transparent or nearly transparent. For such applications, metals must be thin or one must use transparent conductive oxides, or a combination of these materials.
  • Optically transparent cathodes have been described in more detail in US 4,885,211, US 5,247,190, JP 3,234,963, US 5,703,436, US 5,608,287, US 5,837,391, US 5,677,572, US 5,776,622, US 5,776,623, US 5,714,838, US 5,969,474, US 5,739,545, US 5,981,306, US 6,137,223, US 6,140,763, US 6,172,459, EP 1 076 368, US 6,278,236, and US 6,284,393.
  • Cathode materials are typically deposited by any suitable methods such as evaporation, sputtering, or chemical vapor deposition. When needed, patterning can be achieved through many well known methods including, but not limited to, through-mask deposition, integral shadow masking as described in US 5,276,380 and EP 0 732 868, laser ablation, and selective chemical vapor deposition.
  • layers 109 and 111 can optionally be collapsed into a single layer that serves the function of supporting both light emission and electron transportation. It also known in the art that emitting dopants may be added to the hole-transporting layer, which may serve as a host. Multiple dopants maybe added to one or more layers in order to create a white-emitting OLED, for example, by combining blue- and yellow-emitting materials, cyan- and red- emitting materials, or red-, green-, and blue-emitting materials.
  • White-emitting devices are described, for example, in EP 1 187 235, EP 1 182 244, US 5,683,823, US 5,503,910, US 5,405,709, and US 5,283,182, US 20020186214, US 20020025419, US 20040009367, and US 6627333.
  • Hole- blocking layers are commonly used to improve efficiency of phosphorescent emitter devices, for example, as in US 20020015859, WO 00/70655A2, WO 01/93642A1, US 20030068528 and US 20030175553 Al
  • This invention may be used in so-called stacked device architecture, for example, as taught in US 5,703,436 and US 6,337,492.
  • the organic materials mentioned above are suitably deposited through a vapor-phase method such as sublimation, but can be deposited from a fluid, for example, from a solvent with an optional binder to improve film formation. If the material is a polymer, solvent deposition is useful but other methods can be used, such as sputtering or thermal transfer from a donor sheet.
  • the material to be deposited by sublimation can be vaporized from a sublimation "boat" often comprised of a tantalum material, e.g., as described in U.S. Patent No. 6,237,529, or can be first coated onto a donor sheet and then sublimed in closer proximity to the substrate.
  • Layers with a mixture of materials can utilize separate sublimation boats or the materials can be pre-mixed and coated from a single boat or donor sheet.
  • Patterned deposition can be achieved using shadow masks, integral shadow masks (U.S. Patent No. 5,294,870), spatially-defined thermal dye transfer from a donor sheet (U.S. Patent Nos. 5,688,551, 5,851,709 and 6,066,357) and inkjet method (U.S. Patent No. 6,066,357).
  • OLED devices are sensitive to moisture or oxygen, or both, so they are commonly sealed in an inert atmosphere such as nitrogen or argon.
  • a protective cover can be attached using an organic adhesive, a metal solder, or a low melting temperature glass.
  • a getter or desiccant is also provided within the sealed space.
  • Useful getters and desiccants include, alkali and alkaline metals, alumina, bauxite, calcium sulfate, clays, silica gel, zeolites, alkaline metal oxides, alkaline earth metal oxides, sulfates, or metal halides and perchlorates.
  • Methods for encapsulation and desiccation include, but are not limited to, those described in U.S. Patent No. 6,226,890.
  • barrier layers such as SiOx, Teflon, and alternating inorganic/polymeric layers are known in the art for encapsulation.
  • OLED devices of this invention can employ various well-known optical effects in order to enhance its properties if desired. This includes optimizing layer thicknesses to yield maximum light transmission, providing dielectric mirror structures, replacing reflective electrodes with light-absorbing electrodes, providing anti glare or anti-reflection coatings over the display, providing a polarizing medium over the display, or providing colored, neutral density, or color conversion filters in functional relationship with the light emitting areas of the display. Filters, polarizers, and anti-glare or anti-reflection coatings can also be provided over a cover or as part of a cover.
  • the OLED device may have a microcavity structure.
  • one of the metallic electrodes is essentially opaque and reflective; the other one is reflective and semitransparent.
  • the reflective electrode is preferably selected from Au, Ag, Mg, Ca, or alloys thereof. Because of the presence of the two reflecting metal electrodes, the device has a microcavity structure. The strong optical interference in this structure results in a resonance condition. Emission near the resonance wavelength is enhanced and emission away from the resonance wavelength is depressed.
  • the optical path length can be tuned by selecting the thickness of the organic layers or by placing a transparent optical spacer between the electrodes.
  • an OLED device of this invention can have ITO spacer layer placed between a reflective anode and the organic EL media, with a semitransparent cathode over the organic EL media.
  • An EL device satisfying the requirements of the invention was constructed in the following manner:
  • a glass substrate coated with an 85 nm layer of indium-tin oxide (ITO) as the anode was sequentially ultrasonicated in a commercial detergent, rinsed in deionized water, degreased in toluene vapor and exposed to oxygen plasma for about 1 min.
  • ITO indium-tin oxide
  • HIL fluorocarbon
  • HTL hole-transporting layer of N,N'-di-l-naphthyl- N,7V'-diphenyl-4, 4'-diaminobiphenyl (NPB) having a thickness of 75 nm was then evaporated from a tantalum boat.
  • a C-)Iridium(III) (Ir(ppy) 3 ) (6 wt %) were then deposited onto the hole-transporting layer. These materials were also evaporated from tantalum boats.
  • a hole-blocking layer of Inv-2 having a thickness of 10 nm was then evaporated from a tantalum boat.
  • a 40 nm electron-transporting layer (ETL) of tris(8- quinolinolato)aluminum (III) (AIQ3) was then deposited onto the hole- blocking layer. This material was also evaporated from a tantalum boat.
  • ETL electron-transporting layer
  • AlQ 3 aluminum tris(8- quinolinolato)aluminum
  • the above sequence completed the deposition of the EL device.
  • the device was then hermetically packaged in a dry glove box for protection against ambient environment.
  • Example 2 was fabricated in an identical manner to Example 1 except bis(2-rnethyl-quinolinolato)(2 ,4,6-triphenylphenolato)aluminum(III) (BAIq) was used in the hole blocking layer in place of Inv-2.
  • BAIq bis(2-rnethyl-quinolinolato)(2 ,4,6-triphenylphenolato)aluminum(III)
  • Example 3 was fabricated in an identical manner to Example 1 except CBP was used in emissive layer in place of Inv-2, and BCP was used in the hole blocking layer in place of Inv-2.
  • Example 4 was fabricated in an identical manner to Example 1 except mixture of 70% CBP and 30% AIq was used in emissive layer in place of Inv-2 and BCP was used in the hole blocking layer in place of Inv-2.
  • Comparing example 1 and 2 illustrates the lower voltage and higher luminance efficiency benefit of using Inv-2 as the hole Mocking layer instead of BAIq. Comparing examples 3 and 4 shows that the use of AIq in an emissive layer greatly reduces the device efficiency. This problem is not present in Examples 1 and 2, and highlights the benefits of using Inv-2 in the emissive layer and Inv-2 in the hole blocking layer instead of using AIq in the emissive layer and BCP in the hole blocking layer.
  • An EL device satisfying the requirements of the invention was constructed in the following manner: 1. A glass substrate coated with an 85 run layer of indium-tin oxide (ITO) as the anode was sequentially ultrasonicated in a commercial detergent, rinsed in deionized water, degreased in toluene vapor and exposed to oxygen plasma for about 1 min.
  • ITO indium-tin oxide
  • a hole-transporting layer (HTL)of iV,N'-di-l-naphthyl- JV,iV'-diphenyl-4, 4'-diaminobiphenyl (NPB) having a thickness of 75 nm was then evaporated from a tantalum boat.
  • a 35 nm light-emitting layer (LEL) of Inv-13 and Ir(ppy) 3 (6 wt %) were then deposited onto the hole-transporting layer. These materials were also evaporated from tantalum boats.
  • a hole-blocking layer of Inv-2 having a thickness of 10 nm was then evaporated from a tantalum boat. 6.
  • a 40 nm electron-transporting layer (ETL) of tris(8- quinolinolato)aluminum (III) (AlQ 3 ) was then deposited onto the hole- blocking layer. This material was also evaporated from a tantalum boat.
  • AIQ 3 layer On top of the AIQ 3 layer was deposited a 220 nm cathode formed of a 10: 1 volume ratio of Mg and Ag.
  • Example 6 was fabricated in an identical manner to Example 5 except Ir(ppy) 3 was used in the LEL at 12 wt % instead of 6 wt %.
  • Example 7 was fabricated in an identical manner to Example 5 except bis(2-methyl-quinolinolato)(2 ,4,6-triphenylphenol ato)aluminum(III)
  • Comparing examples 5 and 6 with example 7 illustrates the benefit of using Inv-2 as the hole blocking layer instead of BAIq.
  • the concentration of the dopant may be varied from 6 to 12 wt % in Example 5 vs. 6, and the efficiency and voltage improvement does not change significantly.
  • HIL Hole-Injecting layer
  • HTL Hole-Transporting layer
  • HBL Hole Blocking Layer
  • Electron-Transporting layer (ETL) 113 Cathode

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Abstract

Selon la présente invention, un dispositif électroluminescent organique (OLED) comprend une cathode, une anode et, entre les deux, une couche luminescente contenant un émetteur phosphorescent et un matériau hôte. Ledit matériau hôte comprend un premier complexe d'aluminium ou de gallium contenant au moins un ligand 2-(2-hydroxyphényl)pyridine et au moins un ligand phénoxy, ledit ligand phénoxy étant substitué par une amine. Ou bien, se trouve également présente, adjacente à la couche luminescente du côté de la cathode, une couche contenant un second complexe d'aluminium ou de gallium contenant au moins un ligand 2-(2-hydroxyphényl)pyridine et au moins un ligand phénoxy.
PCT/US2006/045829 2005-12-14 2006-11-30 Materiau hote electroluminescent Ceased WO2007070257A1 (fr)

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DE602006012097T DE602006012097D1 (de) 2005-12-14 2006-11-30 Elektrolumineszentes wirtsmaterial
EP06844663A EP1981950B1 (fr) 2005-12-14 2006-11-30 Materiau hote electroluminescent
KR1020087014085A KR101182700B1 (ko) 2005-12-14 2006-11-30 전자발광 호스트 물질
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US20070134514A1 (en) 2007-06-14
JP2009520354A (ja) 2009-05-21
KR20080085137A (ko) 2008-09-23
EP1981950B1 (fr) 2010-01-27
EP1981950A1 (fr) 2008-10-22
DE602006012097D1 (de) 2010-03-18
KR101182700B1 (ko) 2012-09-13
US7709105B2 (en) 2010-05-04

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