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WO2006121117A1 - Procédé de nettoyage au plasma et procédé de fabrication de pellicule - Google Patents

Procédé de nettoyage au plasma et procédé de fabrication de pellicule Download PDF

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Publication number
WO2006121117A1
WO2006121117A1 PCT/JP2006/309484 JP2006309484W WO2006121117A1 WO 2006121117 A1 WO2006121117 A1 WO 2006121117A1 JP 2006309484 W JP2006309484 W JP 2006309484W WO 2006121117 A1 WO2006121117 A1 WO 2006121117A1
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WO
WIPO (PCT)
Prior art keywords
plasma
gas
processing container
cleaning
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/309484
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English (en)
Japanese (ja)
Inventor
Shigeo Ashigaki
Yoshihiro Kato
Satoru Kawakami
Masayuki Moroi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2006121117A1 publication Critical patent/WO2006121117A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Definitions

  • the present invention relates to a technique for cleaning the inside of a processing container of a film forming apparatus using plasma.
  • a film is deposited on the inner wall surface of a processing vessel that extends only on the surface of the semiconductor wafer. If this film is peeled off, there is a risk of causing particle contamination of the semiconductor device. For this reason, it is necessary to periodically clean the processing vessel used in the plasma CVD process.
  • CVD plasma chemical vapor deposition
  • JP2002-57106A uses a remote plasma unit provided outside the processing vessel to convert cleaning gas containing fluorine-based gas such as NF into plasma, and process this plasma.
  • a so-called remote plasma type plasma cleaning method is disclosed in which the inside of a processing vessel is cleaned by introducing the plasma into the vessel.
  • the plasma is introduced into the processing container from the side of the processing container.
  • the remote plasma unit is connected to a gas introduction part for use in introducing film forming gas into the processing container, and from there, plasma is introduced into the processing container via a gas diffusion showerhead. Is introduced.
  • This introduction method is excellent in terms of cleaning efficiency and simplification of the apparatus configuration because it is not necessary to provide a separate introduction part dedicated to plasma.
  • FIG. 4 (a) is a perspective view of the discharge preventing member 17
  • FIG. 4 (b) is a cross-sectional view.
  • the discharge prevention member 17 is made of an insulating material such as a synthetic resin, and a plurality of bent labyrinth gas passages 17 a are formed inside the discharge prevention member 17. It should be noted that the actual discharge preventing member 17 has a large number of gas flow paths 17a formed in FIG. The discharge prevention member 17 having such a structure is fitted into the film forming gas flow path of the gas introduction part, and the conductance of the gas introduction part is lowered by the bent narrow gas flow path 17a. Prevent discharge.
  • the merit of introducing the plasma through the gas introduction unit used for introducing the film forming gas is as follows. Very big. However, if a discharge preventing member is provided in the gas introduction part, there is a problem that the plasma is deactivated and most of the cleaning action is impaired. The reason is that many of the F (fluorine) radicals that contribute to the removal of deposits in the processing vessel among the active species in the plasma are deactivated when passing through the gas inlet where the discharge prevention member is provided. This is probably because of this.
  • An object of the present invention is to efficiently and surely clean the inside of a processing container by using plasma generated outside the processing container without greatly changing an existing film forming apparatus. It is to provide a possible plasma cleaning method.
  • the present invention was completed with the knowledge that when a weak electric field is applied, it is dissociated again into F radicals, that is, deactivated plasma can be reactivated.
  • a plasma tapping method for cleaning the inside of a processing chamber of a film forming apparatus using plasma
  • a gas introduction part for introducing a film forming gas into the processing container is provided in the processing container.
  • a discharge preventing member for preventing discharge in the gas introducing portion is provided in the gas introducing portion, and provided outside the processing vessel for supplying plasma derived from a cleaning gas into the processing vessel.
  • a remote plasma unit is connected to the processing vessel via the gas inlet,
  • plasma derived from the cleaning gas generated by the remote plasma unit is supplied into the processing container through the gas introduction unit, and plasma deactivated by passing through the gas introduction unit is generated in the processing container.
  • plasma cleaning method characterized by performing reactivation and cleaning the inside of the processing container using the reactivated plasma.
  • the deactivated plasma is reactivated by generating a high-frequency electric field between the upper electrode and the lower electrode disposed to face each other in the processing container. It is preferable to do.
  • the upper electrode and / or the lower portion electrode it is preferable to apply a high frequency power output 0. 14W / cm 2 or more 0. 42W / cm 2 or less under per unit area of the object.
  • the processing container is preferably a processing container for forming a film on a target object by CVD.
  • the CVD is preferably plasma CVD using an organic compound as a raw material.
  • the organic compound preferably contains Si
  • the plasma CVD is preferably a film containing Si.
  • the cleaning gas it is preferable to use a gas containing a halogen compound and oxygen as the cleaning gas.
  • the halogen compound is preferably NF.
  • the film forming process for the object to be processed is performed a plurality of times in the processing container, and the film forming process is performed on the object to be processed in the processing container a predetermined number of times.
  • a film forming method is provided, in which the inside of the processing container is cleaned by the plasma cleaning method described above.
  • a gas for film formation is introduced into the processing container through the processing container.
  • a discharge preventing member provided in the gas introduction part for preventing discharge in the gas introduction part
  • Plasma generating means for activating a gas supplied into the processing container to generate plasma
  • a remote plasma unit provided outside the processing container and connected to the processing container via the gas introduction unit, and supplying plasma derived from a cleaning gas into the processing container;
  • a plasma processing apparatus is provided.
  • a computer-readable storage medium storing a control program that operates on a computer
  • a computer constituting a control unit of the plasma processing apparatus controls the plasma processing apparatus to perform the above-described plasma cleaning method. Provided.
  • the present invention it is possible to reliably perform cleaning by introducing the plasma generated outside the processing container and deactivated by the discharge preventing member into the processing container and then reactivating it.
  • plasma can be introduced through the film-forming gas introduction section provided with the discharge prevention member, so that it is not necessary to greatly change the structure of the film-forming apparatus. Since it only needs to be deployed, the apparatus configuration for cleaning can be simplified. Also, during cleaning, plasma can be introduced uniformly from the top of the processing vessel, so that cleaning efficiency can be improved.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma CVD apparatus suitable for carrying out the method of the present invention.
  • FIG. 2 is a flowchart showing the steps of a film forming process including cleaning.
  • FIG. 3 is a graph showing the measurement results of the etching rate.
  • FIG. 4 is a drawing schematically showing a discharge preventing member, where (a) is a perspective view and (b) is a vertical sectional view.
  • a processing container to be cleaned in the plasma cleaning method of the present invention is a processing container for performing a film forming process.
  • the film forming process include a thermal CVD process and a plasma CVD process.
  • the plasma CVD process is preferable.
  • Examples of the film formed by the film forming process include films formed by plasma CVD using an organic compound as a raw material, but are not limited thereto.
  • Examples of the organic compound include Si-containing organic compounds such as trimethylsilane, dimethylethoxysilane, triethylsilazane, and tetramethyldisilazane.
  • a Si-based film a film containing Si
  • SiC-based film such as a SiCH film or a Si * CH film, a SiCN film, a Si * N film SiN film, SiO film, etc.
  • the cleaning gas preferably contains a halogen compound gas, particularly a fluorine compound gas.
  • the cleaning gas preferably further contains oxygen gas.
  • the cleaning gas can include a carrier gas and / or an inert gas as a dilution gas.
  • Suitable cleaning gas mixed gas: NF / O / He; NF / O / Ar; NF / He; N
  • FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma CVD apparatus 1 suitable for carrying out the method of the present invention.
  • the plasma CVD apparatus 1 is configured as a capacitively coupled parallel plate plasma CDV apparatus having a pair of electrodes (upper electrode and lower electrode) arranged in parallel with each other in the vertical direction.
  • the plasma CVD apparatus 1 is made of aluminum whose surface is ceramic sprayed. It has a chamber 12 as a processing container formed in a cylindrical shape. The inner surface of the chamber 12 can be ceramic sprayed. Chamber 1 is a safety ground. A susceptor 3 functioning as a lower electrode is provided in the chamber 12. On the susceptor 3, an object to be processed, for example, a silicon wafer W is placed. The susceptor 3 is provided with a conductor (not shown), and is configured to receive high-frequency power through the conductor.
  • a disk-shaped electrostatic chuck 5 is provided on the susceptor 3.
  • the electrostatic chuck 5 includes an insulating material and an electrode 6 supported inside the insulating material. By applying a DC voltage to the electrode 6, the wafer W is attracted to the electrostatic chuck 5 by Coulomb force.
  • a focus ring 7 made of a ceramic material such as alumina is provided on the outer periphery of the acceptor 3.
  • a shower head 10 that functions as an upper electrode is provided above the susceptor 3.
  • the shower head 10 can be formed of an aluminum force and is supported on the upper wall 2a of the chamber 12 through an insulating material (not shown).
  • a large number of gas discharge holes 11 are provided on the lower surface 10 a of the shower head 10 facing the susceptor 3. The distance between the wafer W surface and the lower surface 10a of the shower head 10 can be adjusted by an elevating mechanism (described later).
  • a gas inlet 12 connected to the shower head 10 is provided in the vicinity of the center portion of the upper wall 2 a of the chamber 1.
  • the gas inlet 12 communicates with the gas discharge hole 11 via the gas diffusion chamber 10 b inside the shower head 10.
  • a discharge preventing member 17 is fitted inside the gas inlet 12.
  • the discharge prevention member 17 is made of an insulating material such as a synthetic resin, and has a labyrinth-structured flow path inside thereof. The discharge in the gas inlet 12 is prevented by adjusting the conductance of the working gas.
  • the gas inlet 12 is connected to a cleaning gas supply source 22 that supplies a cleaning gas via a remote plasma unit 50 and a gas supply pipe 23, and a film forming gas that is supplied via a gas supply pipe 27. Connected to membrane gas supply 21.
  • the gas supply pipes 23 and 27 are provided with a valve 24, a mass flow controller 25 and a valve 26, respectively.
  • (CH 2) Si is used as a film forming gas by CVD.
  • the deposition gas flows from the deposition gas supply source 21 through the gas supply pipe 27 and the gas inlet 12 into the gas diffusion chamber 10b of the shower head 10 and from there through the discharge hole 11 to the chamber 2 It is discharged into the processing space inside.
  • the cleaning gas flows from the cleaning gas supply source 22 through the gas supply pipe 23, the remote plasma unit 50, and the gas inlet 12 into the gas diffusion chamber 10 b of the shower head 10, and from there to the chamber through the discharge hole 11. It is discharged into the processing space in 1-2.
  • the cleaning gas is turned into plasma when passing through the remote plasma unit 50, and the generated plasma is sent to the chamber 12.
  • the plasma generation method in the remote plasma unit 50 is not particularly limited.
  • the cleaning gas can be purified by an inductive coupling method (ICP method).
  • ICP method inductive coupling method
  • a suitable commercially available remote plasma unit 50 is exemplified by ASTRON (Remote Plasma Sources for Chamber Cleaning) provided by MKS Instruments, Inc. of the United States. It is preferable to provide an ion filter for trapping ions in the plasma near the outlet of the remote plasma unit 50 so that radicals exist predominantly in the plasma introduced into the chamber 12.
  • the plasma CVD apparatus 1 supplies radicals (for example, F-radio canre) contained in the plasma generated by the remote plasma unit 50 provided outside the chamber 1 into the chamber 12. By doing so, the remote plasma type cleaning for cleaning the inside of the chamber 12 can be performed.
  • radicals for example, F-radio canre
  • An exhaust pipe 15 is connected to the side wall of the chamber 12.
  • the exhaust pipe 15 is connected to an exhaust device 40 such as a dry pump, so that the inside of the chamber 12 can be evacuated to a predetermined reduced pressure, for example, a predetermined pressure of 10 Pa or less.
  • the side wall of the chamber 12 is provided with a wafer W loading / unloading port and a gate vano lev that opens and closes the loading / unloading port (both are not shown), through which the wafer W is loaded into and unloaded into the chamber 12. It is done.
  • the susceptor 3 is supported by a support column 4, and a drive shaft 16 a of an elevating mechanism 16 such as a ball screw mechanism is connected to the support column 4.
  • an elevating mechanism 16 such as a ball screw mechanism
  • the susceptor 3 moves up and down, whereby the distance between the shower head 10 and the susceptor 3, that is, the interelectrode gap between the upper electrode and the lower electrode can be arbitrarily adjusted.
  • the periphery of the support 4 is covered with a bellows 14 made of stainless steel.
  • a bellows force bar 13 is provided outside the bellows 14.
  • a high frequency power supply 30 is connected to the shower head 10 functioning as an upper electrode via a feeder line in which a matching unit 31 is interposed.
  • the high frequency power supply 30 supplies high frequency power of a predetermined frequency, for example, 13.56 MHz, to the shower head 10 and forms a high frequency electric field for plasma formation between the shower head 10 as the upper electrode and the susceptor 3 as the lower electrode.
  • a low-pass filter (LPF) (not shown) is connected to the shower head 10.
  • a high frequency power supply 32 is connected to the susceptor 3 functioning as the lower electrode via a feeder line in which a matching unit 33 is interposed.
  • the high-frequency power supply 32 can supply high-frequency power of a predetermined frequency, for example, 2. OMHz, to the susceptor 3 that is the lower electrode.
  • This susceptor 3 is connected to a not-shown noise pass filter (HPF).
  • the components (high-frequency power supply system, gas supply system, remote plasma unit, etc.) provided in the plasma CVD apparatus 1 are connected to a process controller 60 comprising a computer equipped with a CPU. Controlled by The process controller 60 includes a user board that includes a keyboard on which a process manager inputs commands for managing the plasma CVD apparatus 1 and a display that visualizes and displays the operation status of the plasma CVD apparatus 1. Is connected.
  • control program software
  • process condition data for realizing various processes executed in the plasma CVD apparatus 1 under the control of the process controller 60 are recorded in the plasma CVD apparatus 1.
  • a storage unit 62 storing process recipes is connected.
  • the process controller 60 calls a process recipe corresponding to the command from the storage unit 62 and executes a control program, and the plasma CVD apparatus 1 Each component of is controlled so that the process conditions defined in the process recipe are realized. As a result, a desired process is performed by the plasma CVD apparatus 1 under the control of the process controller 60.
  • the control program and process recipe can be stored in a computer-readable storage medium such as a CD-ROM, a hard disk drive, a flexible disk, or a flash memory.
  • the control program and the process recipe can be provided on demand from another device that stores them via a communication medium (for example, a dedicated line).
  • the wafer W is first placed on the susceptor 3 and adsorbed by the electrostatic chuck 5.
  • the inside of the chamber 12 is evacuated to a predetermined degree of vacuum by the exhaust device 40.
  • the support 4, that is, the susceptor 3 is raised by the elevating mechanism 16, whereby the wafer W is placed at a predetermined processing position in the chamber 12.
  • the temperature of the susceptor 3 is controlled to a predetermined value, and the exhaust in the chamber 12 is exhausted by the exhaust device 40 to obtain a predetermined high vacuum state.
  • the film forming gas is supplied from the film forming gas supply source 21 to the shower head 10 at a predetermined flow rate, and is uniformly discharged toward the wafer W through the discharge holes 11 from there.
  • a high frequency power of a predetermined frequency for example, 13.56 MHz
  • the film forming gas is turned into plasma in the space.
  • the susceptor 3 is applied with power having a frequency lower than that of the high-frequency power applied to the shower head 10, and thus the generated plasma is drawn into the susceptor 3.
  • a chemical reaction occurs on the surface of the wafer W by the drawn plasma, and a film such as SiCH is formed on the surface of the wafer W.
  • mild remote plasma is used to prevent the A1 shower head 10 from being damaged by the plasma of the cleaning gas.
  • Cleaning by remote plasma is performed by introducing F-containing plasma generated in the remote plasma unit 50 into the chamber 12.
  • the source gas (cleaning gas) of the remote plasma preferably contains NF.
  • the cleaning gas consists of a mixture of NF gas, ⁇ gas and Ar gas.
  • NF / O / Ar 200-400 / 50-150 / 1000-2000 It is supplied to the remote plasma unit 50 at mL / min (sccm) and converted into plasma there.
  • the pressure in the chamber 12 is preferably adjusted to 133 to 400 Pa (l to 3 Torr).
  • the cleaning gas containing NF gas is supplied to the chamber.
  • the strength of the high-frequency electric field, that is, the high-frequency power M applied to the shower head 10 is the same. A cleaning effect is obtained.
  • FIG. 2 is a process diagram showing an example of the procedure of the film forming method. As shown in FIG. 2, after performing the film forming process a predetermined number of times, or after processing a predetermined number of objects to be processed, the above-described plasma cleaning process is performed each time.
  • the inside of the chamber 12 can be maintained at a cleanliness within an allowable range, and tiling (for example, wet cleaning) accompanied by decomposition of the plasma CVD apparatus 1 can be performed. Even without this, high-quality film formation can be performed continuously for a long period of time. Further, since the above-described plasma cleaning does not give a large damage to the shower head 10, the maintenance cycle of the shower head 10 can be lengthened. Therefore, the down time of the plasma CVD apparatus 1 can be minimized and the plasma CVD apparatus 1 can be operated efficiently. [0042] Next, the results of tests conducted to confirm the effects of the present invention will be described. Using the plasma CVD apparatus 1 in Fig. 1, a TEOS film (SiO film) was formed on the susceptor 3
  • a TEOS film having a lower etching rate than the SiC film was used as a sample. Since the SiC-based film and the TEOS film have a correlation with the etching characteristics, it is possible to indirectly evaluate the etching characteristics of the SiC-based film by evaluating the etching characteristics of the TEOS film.
  • Etching (cleaning) conditions are as follows.
  • Comparative Example 1 The cleaning gas is turned into plasma in the remote plasma unit 50, and this plasma is introduced into the chamber 12. A high frequency electric field is not formed in the chamber 12. Comparative Example 2: The cleaning gas is introduced into the chamber 12 without turning the cleaning gas into plasma by the remote plasma unit 50 (remote plasma unit OFF). A high-frequency electric field is formed in the chamber 2 and the cleaning gas is first plasmaized in the chamber 12.
  • Example 1 The cleaning gas is converted into plasma in the remote plasma unit 50 and this plasma is introduced into the chamber 12. A high-frequency electric field is formed in the chamber 12 to reactivate the deactivated plasma.
  • the gap between the upper and lower electrodes (the distance from the lower surface of the shower head 10 to the upper surface of the susceptor 3) was 18 mm.
  • the pressure inside the chamber 12 was 266 Pa (2 Torr).
  • the temperature of the electrostatic chuck 5 was 300 ° C.
  • the F radical which is an active species effective for Note that the etching rate of Example 1 is significantly higher than that of Comparative Example 2.
  • the comparative example 2 is relatively difficult to dissociate NF for the first time in the chamber.
  • the embodiments of the present invention have been described, but the present invention can be variously modified without being limited to the above embodiments.
  • the cleaning of the plasma CVD apparatus has been described as an example.
  • the apparatus can use the plasma for cleaning, the plasma may not be used for the CVD film formation.
  • the object to be cleaned may be a laser or a thermal CVD processing container.
  • the force S applied to the shear head 10 as the upper electrode in order to reactivate the plasma S and the upper electrode and the lower electrode that can be applied to the lower electrode. You may apply to both. Furthermore, in order to reactivate the deactivated plasma, not only the parallel plate method but also other methods such as ICP method, ECR method, surface wave method, magnetron method, etc. can be used. Is possible.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Procédé de nettoyage au plasma pour nettoyer l’intérieur d’une chambre de traitement d’un dispositif de fabrication de pellicule au moyen de plasma. La chambre de traitement est alimentée en plasma, lequel est généré à partir d’un gaz nettoyant par une unité de plasma distante disposée à l’extérieur de la chambre de traitement, via une section d’introduction de gaz équipée d’un élément de prévention de décharge. Le plasma désactivé par son passage par la section d’introduction de gaz est réactivé par un moyen de génération de plasma disposé dans la chambre de traitement, et l’intérieur de la chambre de traitement est nettoyé par le plasma réactivé.
PCT/JP2006/309484 2005-05-11 2006-05-11 Procédé de nettoyage au plasma et procédé de fabrication de pellicule Ceased WO2006121117A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005138502A JP2006319042A (ja) 2005-05-11 2005-05-11 プラズマクリーニング方法、成膜方法
JP2005-138502 2005-05-11

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WO2006121117A1 true WO2006121117A1 (fr) 2006-11-16

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011141986A1 (fr) * 2010-05-10 2011-11-17 株式会社アルバック Dispositif de formation de film au plasma et procédé de formation de film
JP5659079B2 (ja) * 2011-05-10 2015-01-28 株式会社アルバック ＺｒＢＯ膜の形成装置
JP2019216140A (ja) * 2018-06-11 2019-12-19 東京エレクトロン株式会社 成膜装置及び成膜装置におけるクリーニング方法
WO2021230109A1 (fr) * 2020-05-12 2021-11-18 株式会社クリエイティブコーティングス Procédé ald et dispositif ald
JP7682054B2 (ja) 2021-08-17 2025-05-23 東京エレクトロン株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338492A (ja) * 2002-05-21 2003-11-28 Tokyo Electron Ltd プラズマ処理装置
JP2005026409A (ja) * 2003-07-01 2005-01-27 Taiyo Nippon Sanso Corp プロセスチャンバー内のクリーニング方法及び基板処理装置
JP2005101309A (ja) * 2003-09-25 2005-04-14 Seiko Epson Corp クリーニング方法及びクリーニング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338492A (ja) * 2002-05-21 2003-11-28 Tokyo Electron Ltd プラズマ処理装置
JP2005026409A (ja) * 2003-07-01 2005-01-27 Taiyo Nippon Sanso Corp プロセスチャンバー内のクリーニング方法及び基板処理装置
JP2005101309A (ja) * 2003-09-25 2005-04-14 Seiko Epson Corp クリーニング方法及びクリーニング装置

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