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WO2006068156A1 - Sonde kelvin - Google Patents

Sonde kelvin Download PDF

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Publication number
WO2006068156A1
WO2006068156A1 PCT/JP2005/023413 JP2005023413W WO2006068156A1 WO 2006068156 A1 WO2006068156 A1 WO 2006068156A1 JP 2005023413 W JP2005023413 W JP 2005023413W WO 2006068156 A1 WO2006068156 A1 WO 2006068156A1
Authority
WO
WIPO (PCT)
Prior art keywords
probe
kelvin
kelvin probe
tip
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/023413
Other languages
English (en)
Japanese (ja)
Inventor
Hajime Hosaka
Shinichi Moriya
Kazuyuki Miyamura
Takashi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OGURA JEWEL INDUSTRY Co Ltd
OPTO SYSTEM CO Ltd
Original Assignee
OGURA JEWEL INDUSTRY Co Ltd
OPTO SYSTEM CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OGURA JEWEL INDUSTRY Co Ltd, OPTO SYSTEM CO Ltd filed Critical OGURA JEWEL INDUSTRY Co Ltd
Priority to JP2006549014A priority Critical patent/JPWO2006068156A1/ja
Publication of WO2006068156A1 publication Critical patent/WO2006068156A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06738—Geometry aspects related to tip portion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

Definitions

  • LED Light-emitting diode
  • LD semiconductor laser
  • connection pads include aluminum (A1), copper (Cu), and gold (Au). However, when aluminum and copper are oxidized and soon oxidized, a strong oxide film (A10, CuO, Cu0) is formed. In the case of gold, the surface is free of oxides and nitrides.
  • a quality layer is formed. Therefore, in order to improve the electrical contact between the probe and the connection pad of the object to be measured, it is necessary to remove the oxide film or the deteriorated layer so that the probe does not contact the aluminum of the connection pad of the object to be measured. Don't be.
  • Patent Document 1 proposes a method in which the probe is brought into contact with the connection pad of the object to be measured obliquely to remove the oxide film on the surface. Further, Patent Document 2 proposes that the probe tip be made of a material different from the material of the probe body in order to prevent an oxide film from adhering to the probe tip. Patent Document 3 proposes a method of reducing the oxide film by having a semiconductor photocatalyst at the probe tip.
  • a four-terminal method (Kelvin method) is known as a method for preventing an error caused by contact resistance between a connection pad of a device under test and a probe.
  • the current application terminal and voltage Separating the measurement terminal eliminates the influence of contact resistance, and enables high-precision measurement even if there is an oxide film on the connection pad that is the object to be measured.
  • the four probe method uses two probe as a pair, and the pair of probe is a Kelvin probe!
  • Patent Document 1 JP-A-11 148947
  • Patent Document 2 JP 2004-226204 A
  • Patent Document 3 JP 2003-207522
  • Patent Document 4 JP-A 63-175771 Means for solving the problem
  • the present inventors provide the following Kelvin probe, a measuring device having a Kelvin probe, and a method for producing the Kelvin probe.
  • a first invention is a first stylus part, a second stylus part insulated from the first stylus part by an insulating layer, and a powerful Kelvin probe.
  • a Kelvin probe having an elastic structure that can be elastically contacted with an object to be inspected when only one of the two probe parts is pinched.
  • the insulating layer partially secures the first probe part and the second probe part, and the vicinity of the tip part of the probe is not fixed, thereby forming the elastic structure.
  • a Kelvin probe according to the first invention is provided.
  • the third invention is
  • the Kelvin probe according to the first or second invention is provided in which the contacting probe part stagnate by the contact pressure, and the contact state is changed to the non-contact state.
  • the first probe part is an application needle having a smaller elasticity than the second probe part, and the second probe part is elastic compared to the first probe part.
  • a first force which is a detection needle having a large structure.
  • a Kelvin probe according to any one of the third invention is provided.
  • the fifth invention is the Kelvin probe according to any one of the fourth invention, wherein the first probe part is a tungsten-based barta material force and the second probe part is a stainless steel wire-like material force. I will provide a.
  • the sixth invention provides the Kelvin probe according to any one of the fifth invention, in which the first force in which the protruding amount of the first probe part and the second probe part differs depending on the object to be inspected.
  • a seventh invention provides the Kelvin probe according to the sixth invention, wherein the second probe part protrudes more than the first probe part toward the test object. According to the eighth aspect of the invention, when both the first probe part and the second probe part come into contact with the inspection object by pressing against the object to be inspected, the inspection object is passed through the second probe part.
  • a ninth invention provides the Kelvin probe according to any one of the first to eighth inventions, wherein the tip line of the second probe part is an acute angle with respect to the center line of the first probe part. In a tenth aspect of the present invention, the tip line having the acute angle of the second probe portion is connected to the second probe portion.
  • the Kelvin probe according to the ninth invention is provided by providing a plurality of bent nodes. In the eleventh invention, the first probe part and the tip of the second probe part are on one axis with respect to the sliding direction of the probe. Provide the described Kelvin probe.
  • a twelfth invention provides an inspection apparatus having the Kelvin probe according to any one of the first to eleventh inventions.
  • a thirteenth invention has a test object mounting table for mounting a test object, and a Kelvin probe holding part for holding the Kelvin probe according to any one of the first power eleventh invention, The probe holding section provides the inspection apparatus according to the eleventh aspect, wherein the probe holding section lowers the tip of the measuring element section having an elastic structure substantially perpendicular to the inspection target mounting plane of the inspection target mounting base.
  • a fourteenth aspect of the invention includes an inspection target mounting table for mounting an inspection target, and a Kelvin probe holding unit for holding the Kelvin probe according to any one of the first to eleventh aspects of the invention.
  • the Kelvin probe holder is configured such that the tip of the measuring part having an elastic structure with respect to the inspection target mounting plane of the inspection target mounting table is viewed from the inspection target mounting plane on the measuring part side having no elastic structure.
  • An inspection apparatus according to the tenth aspect of the present invention is provided that descends substantially vertically while maintaining an angle of less than degrees.
  • a fifteenth aspect of the invention is an operation method of an inspection apparatus having the Kelvin probe according to any one of the sixth force of the eleventh aspect of the invention, and at the latest, the first probe part or the second probe part Provided is a method of operating an inspection apparatus having a shank side force application step of applying a force toward the shank side to the Kelvin probe after any one of the above contacts an inspection object.
  • the sixteenth invention includes a first substrate preparing step of preparing a first substrate, and a film in which a film-like insulating film is disposed on the first substrate surface prepared in the first substrate preparing step The step of arranging the second substrate so as to sandwich the film-like insulating film arranged in the film-like insulating film arranging step, and the step of arranging the second substrate.
  • a method for manufacturing a Kelvin probe comprising: an outer shape processing step for processing the block by wire electric discharge machining so that the first substrate and the second substrate are isolated from each other to form a measuring element.
  • the seventeenth invention is the thickness of the film-like insulating film
  • the eighteenth invention provides the method for producing a Kelvin probe according to the sixteenth or seventeenth invention, wherein a cut-out width cut out in the outer shape processing step is in a range of 5 microns to 2 mm.
  • the nineteenth invention provides a Kelvin probe having a polygonal cross section.
  • a twenty-second invention provides the Kelvin probe according to the nineteenth invention, wherein the polygon is a polygon that is not a regular polygon.
  • a twenty-first invention provides the Kelvin probe according to the nineteenth or twenty-first invention, wherein the polygon is an odd-sided polygon having an odd number of sides constituting the polygon.
  • a twenty-second invention provides the Kelvin probe according to any one of the nineteenth force and the twenty-first invention, wherein the polygonal cross section is in a shank portion.
  • the polygonal cross section is at the tip, and when the tip is brought into contact with the connection pad of the object to be measured, the polygonal cross section is selected from any one of the vertices of the polygon.
  • a Kelvin probe according to any one of the nineteenth to twenty-first inventions configured to contact a connection pad contact surface is provided.
  • the polygonal cross section is at the tip, and when the tip is brought into contact with the connection pad of the object to be measured, the apex force of the polygon is also in contact with the connection pad.
  • a Kelvin probe according to any one of the nineteenth to twenty-first aspects of the invention configured to prevent contact with a surface is provided.
  • the polygonal cross section has a curved surface as a surface to be contacted with the connection pad of the object to be measured at the tip of the Kelvin probe.
  • a Kelvin probe according to any one of the twenty-first inventions is provided.
  • a twenty-sixth aspect of the invention provides the Kelvin probe according to any one of the twenty-fifth aspect of the invention, wherein at least one side of the polygon is replaced with a straight line.
  • the twenty-seventh aspect of the invention is arranged so as to be sandwiched between the first probe part and the second probe part, the first probe part, and the second probe part.
  • a Kelvin device comprising: an insulating layer portion for integrating the first measuring portion and the second measuring portion.
  • a probe Provide a probe.
  • a twenty-eighth aspect of the invention provides the Kelvin probe according to the twenty-seventh aspect of the invention, which is manufactured by the method for manufacturing a Kelvin probe according to any one of the sixteenth force and the eighteenth aspect of the invention. 20th
  • a ninth invention provides the Kelvin probe according to the twenty-seventh or twenty-eighth invention, wherein the insulating layer portion is not arranged at the tip portion.
  • a thirtieth aspect of the invention provides the Kelvin probe according to any one of the twenty-ninth aspect, wherein the nineteenth force having a bent tip portion.
  • a thirty-first aspect of the invention provides the Kelvin probe according to the thirty-first aspect of the invention, wherein the bending is made on either side of the probe pair.
  • the Kelvin probe tip can be finely applied by the Kelvin probe manufacturing method of the present invention
  • the use of the Kelvin probe obtained by the Kelvin probe manufacturing method of the present invention makes it possible to obtain a microelement. Inspection can be performed.
  • the oxide film or the altered layer on the connection pad surface of the object to be measured can be easily removed. Therefore, the Kelvin probe can come into contact with the aluminum material portion of the connection pad of the object to be measured, and measurement errors due to contact resistance can be reduced.
  • the orientation of the probe can be easily performed when the probe is attached to the probe device.
  • the first embodiment will mainly describe claims 16 to 18.
  • the second embodiment will mainly describe claims 19 to 26.
  • the third embodiment will mainly describe claims 27 to 29.
  • the fourth embodiment will mainly describe claims 30 and 31.
  • the fifth embodiment will mainly describe claims 1, 2, 6, 7, and 8.
  • Embodiment 6 will mainly describe claim 3.
  • the seventh embodiment will mainly describe claims 4 and 5.
  • the eighth embodiment will mainly describe claims 9 and 10.
  • the ninth embodiment will mainly describe claim 11.
  • the tenth embodiment will mainly describe claims 12 to 15.
  • Embodiment 1 Concept> The present embodiment relates to a method of manufacturing a Kelvin probe that can electrically insulate a pair of measuring elements by disposing an insulating layer between the pair of measuring elements.
  • Fig. 13 shows a conceptual diagram of the manufacturing method of the Kelvin probe of this embodiment. First, a film-like insulating film is sandwiched between the first substrate and the second substrate and pressed while being heated using a roller (Next, the block is cut by a discharge cage (b). The resulting block is further finely added to form a Kelvin probe (c).
  • FIG. 12 shows an example of the manufacturing process of the Kelvin probe of this embodiment.
  • the manufacturing process of this embodiment will be described for each process with reference to FIG.
  • the first substrate preparation step (S1201) is a step of preparing the first substrate.
  • the material of the first substrate is mainly composed of a conductive material.
  • the conductive material is preferably as hard as possible in order to remove the oxide film.
  • tungsten, tungsten alloy, tungsten carbide, beryllium copper, or the like is preferable as the conductive material.
  • the Kelvin probe may be composed of a plurality of types of materials other than a single type of material.
  • the film-like insulating film disposing step (S1202) is a step of disposing a film-like insulating film on the first substrate surface prepared in the first substrate preparing step. Since the film-like insulating film is the original material of the insulating layer constituting the Kelvin probe, the material can at least ultimately become the insulating layer. However, it is not always necessary to have an insulating property during the placement process work, and it is sufficient if the insulating property is obtained through a process such as heating in a later step.
  • This arranging step can be performed by placing a film-like insulating film on the first substrate and pressurizing with a roller. Of course, you can simply place it without using a roller.
  • the thickness of the film-like insulating film is preferably 5 microns or more and 50 microns or less. More preferably, it is 5 microns or more and 25 microns or less. If the film insulation film is 5 microns or less, the product characteristic strength of the film insulation film cannot accurately form a gap. If the film insulation film is 50 microns or more, the Kelvin probe becomes large and the microelements cannot be inspected. It is. Here, the fine element corresponds to a light emitting diode element, for example. However, the film insulation film in this film insulation film arrangement process Does not mean the thickness of the insulating layer of the Kelvin probe immediately after completion.
  • the thickness of the film-like insulating film is usually reduced by heat curing. Therefore, it is necessary to determine the thickness of the film-like insulating film in this process after taking into consideration in advance how much the thickness will decrease in the subsequent process.
  • An important reason for using this film-like insulating film is that a uniform thickness can be realized over a wide area. If a uniform thickness cannot be realized, the yield of products that satisfy the gap standard, which is the thickness of a predetermined insulating layer, will be deteriorated. Moreover, if a uniform gap cannot be realized, the mechanical strength of the insulating layer for integrating the two measuring elements will be insufficient.
  • the film-like insulating film is a film in which a resin (resist layer) hardened by light is sandwiched by a polyethylene and polyester film, but in the present invention, it reacts with light.
  • a resin resist layer
  • the film-like insulating film is a film in which a resin (resist layer) hardened by light is sandwiched by a polyethylene and polyester film, but in the present invention, it reacts with light.
  • a technique such as spin coating rather than a film-like insulating film. This is because the products with film-like insulating films have a large thickness variation rate because the absolute value of the difference in thickness does not change even if they are thin.
  • spin coating if spin coating is used, a bulge is formed on the end face of the substrate, so the problem of gap accuracy degradation due to this bulge must be solved.
  • the second substrate disposing step (S1203) is a step of disposing the second substrate so as to sandwich the film insulating film disposed in the film insulating film disposing step.
  • the material of the second substrate is the same as the material of the first substrate.
  • the block creation step (S1204) the first substrate placed with the film-like insulating film sandwiched in the second substrate placement step and the second substrate are pressed while heating.
  • This is a process of forming a block integrally with a film-like insulating film.
  • the pressing is performed by placing a film-like insulating film between the first substrate and the second substrate, and pressing the first substrate and the second substrate in the adhesion direction with a roller. .
  • a dry film laminator is used as the roller.
  • the first substrate and the film-like insulating film, and the second substrate and the film-like insulating film are firmly fixed together as a block. It becomes.
  • a method of compressing and integrating with a press machine a method of vapor-depositing an insulating film layer by CVD, a first substrate, a film-like insulating film, and a second substrate placed on a jig and heating and screwing
  • a method of compressing with is also a method of compressing with.
  • the outer shape processing step (S1205) is a step of processing the block by wire electric discharge machining so that each of the first substrate and the second substrate becomes a measuring element while being insulated.
  • the wire discharge force is a method in which a metal wire and a target object are used as electrodes to perform calorie by discharging between them. If the wire discharge force is used, even a hard metal such as tungsten can be processed into a complicated shape. Wire electrical discharge machining can be processed with a conductive material. Insulators cannot be processed. Therefore, it seems that the film-like insulating film cannot be processed, but the block is mainly made of a conductive material, and the film-like insulating film is sufficiently thin so that it is processed together with the conductive material. be able to.
  • the cutting width to be cut out in the outer casing process is in the range of 5 microns to 2 mm.
  • the cut-out width means the length in the direction perpendicular to the cut surface of the cut block. This is because it is technically difficult to cut the cutting width to 5 microns or less, and if the cutting width is 2 mm or more, the Kelvin probe becomes large and is not suitable for the measurement of fine elements. Since the Kelvin probe generally has a complicated shape having a pointed tip, it is difficult to achieve a desired shape by using only a cutting blade or only a polishing process. An important point of the present invention is that the wire discharge force is used in this outer shape caching process, and this makes it possible to realize a Kelvin probe having a complicated shape for the first time.
  • the Kelvin probe can be finely processed, a Kelvin probe suitable for measurement of a miniaturized element can be manufactured.
  • Embodiment 2 Concept>
  • FIG. 1 shows a state in which a semiconductor is inspected using the Kelvin probe of this embodiment.
  • the Kelvin probe uses two gauges as a pair, and uses a pair of Kelvin probes on the current entrance and exit sides respectively, so use at least 4 gauges in total.
  • the Kelvin probe is fixed, and the semiconductor support is Test by moving in the direction of the mark.
  • FIG. 2 shows how the oxide film on the surface of the connection pad of the object to be measured is removed using the Kelvin probe of this embodiment.
  • the connection pad of the DUT shown in Fig. 2 is made of aluminum (0203) as the base material, and the surface is an oxide film (A1 0)
  • the Kelvin probe (0201) is in contact only with the oxide film (0202), which is an insulator, so the contact resistance is large and accurate measurement cannot be performed. However, if the tip of the Kelvin probe is sharp, as shown in Fig. 2 (b), the Kelvin probe (0201) removes the hard oxide film (0202) on the surface and connects the object to be measured. Can contact with aluminum (0203) which is the pad body.
  • Embodiment 2 Configuration>
  • the Kelvin probe of this embodiment has a polygonal cross section.
  • the cross section is a plane perpendicular to the longitudinal direction of the probe.
  • the cross section is rectangular, but not limited to this example, the polygon may be a plane figure surrounded by three or more line segments. Also, as in the example in Figure 4, at least one side of the polygon may be replaced with a straight line to form a curve. Further, it is not necessary for the entire cross section of the Kelvin probe to be a polygon, and a part of the cross section may be a polygon.
  • a “Kelvin probe having a polygonal cross section” means that the cross section of the entire Kelvin probe is polygonal, or only the cross section of the probe constituting the Kelvin probe is polygonal. It may be there.
  • the Kelvin probe of the present embodiment uses two measuring elements as a pair. Therefore, there are two measuring elements as shown in FIG. 3 or FIG. 4, and the Kelvin probe of this embodiment is obtained.
  • the cross sections of both of the two probe elements need to be polygonal, and one of the two probe elements has the shape shown in FIG. 3 or FIG. If it is a circle)
  • the polygon is preferably a polygon that is not a regular polygon. Since the Kelvin probe having a regular n-square cross section has n-fold symmetry with respect to the central axis, it is difficult to visually align it. Since normal orientation is performed by image recognition, Direction alignment becomes easier when the cross section is not a regular polygon. The higher the anisotropy, the easier the orientation is. Therefore, it is preferable that the polygon is as different as possible from the regular polygon.
  • the polygon is more preferably an odd-sided polygon in which the number of sides constituting the polygon is an odd number.
  • the odd-sided polygon is a triangle or a pentagon. This is because even-sided polygons (rectangles, hexagons, etc.) are more symmetrical, and odd-sided polygons are easier to align.
  • the Kelvin probe of the present embodiment may have a polygonal cross section in the shank portion of the Kelvin probe.
  • a shank part is an attachment part when attaching a Kelvin probe to a probe apparatus. This is because the cross section of the shank portion is polygonal, so that it is easy to align the direction when attaching the Kelvin probe.
  • the material of the Kelvin probe is mainly composed of a conductive material.
  • the conductive material is preferably as hard as possible in order to remove the oxide film.
  • tungsten, tungsten alloy, tungsten carbide, beryllium copper, and the like are preferable as the conductive material.
  • the Kelvin probe may be composed of a plurality of kinds of materials other than a force composed of only one kind of material.
  • the surface of the portion of the Kelvin probe that contacts the connection pad of the object to be measured is covered with another material so that the surface is not easily oxidized.
  • the material that covers the surface include gold and platinum. These materials can be attached as a thin film to the tip of the Kelvin probe by fitting or vapor deposition.
  • the radius of curvature of the apex angle of the tip is 1 ⁇ m or less. If the radius of curvature exceeds this value, the oxide film cannot be cut sufficiently, and the Kelvin probe cannot sufficiently contact the connection pad of the object to be measured.
  • the cross section of the polygon is at the tip of the Kelvin probe, and when the tip is brought into contact with the object to be measured, the connection pad contact surface of the object to be measured starts from any one of the polygonal vertices. It can be configured to touch.
  • the tip refers to the part with a tip force of 20 to 1000 m. Even if the cross-section is polygonal, can the surface oxide film, etc. be sufficiently removed by simply contacting the flat part or one side of the tip with the connection pad of the object to be measured? That's it.
  • the Kelvin probe In order for the sharp part (polygonal apex) at the tip of the Kelvin probe to scrape the oxide film, the Kelvin probe must be contacted at an angle. Preferably, the angle formed by the tip surface and the oxide film surface is 15 degrees or more.
  • the cross section of the polygon is at the tip of the Kelvin probe.
  • the connection pad contact of the object to be measured is contacted from the apex of the polygon. It is configured so that it does not touch the touch surface.
  • the oxide film can be removed as described above.
  • the oxide film not only the oxide film but also the connection pad body of the object to be measured may be damaged. If the connection pad body of the object to be measured is damaged, contact resistance increases due to surface irregularities, and accurate inspection cannot be performed. Therefore, in some cases, it is more preferable to bring the portion (side or flat portion) of the tip of the Kelvin probe into contact with the connection pad of the object to be measured.
  • the ability to tolerate scratches to some extent should be selected according to the connection pad material and customer requirements.
  • the polygonal cross section is connected to the tip of the Kelvin probe and the surface to be contacted with the connection pad of the object to be measured may be a curved surface. This is because if the tip end is a curved surface, the connection pad body is hardly damaged.
  • the curvature radius of the curved surface is 5 m or more so as not to damage the body of the connection pad of the object to be measured.
  • the Kelvin probe of the present embodiment is preferably manufactured by a discharge cage. According to the discharge caloe, it is hard and suitable for microfabrication of materials!
  • the Kelvin probe of this embodiment has a sharp tip shape, the oxide film or the altered layer attached to the surface of the connection pad of the object to be measured can be removed, and the metal of the contact pad main body and the Kelvin probe can be removed.
  • the tip can be in direct contact. Therefore, the contact resistance caused by the oxide film or the altered layer can be reduced, and the measurement accuracy can be improved.
  • the cross-sectional shape is polygonal, it is easy to align the direction when installing the Kelvin probe.
  • the present embodiment relates to a Kelvin probe based on the second embodiment, in which an insulating layer is sandwiched between a pair of measuring elements, and the pair of measuring elements and the insulating layer are integrated.
  • FIG. 5 shows the Kelvin probe of this embodiment.
  • the Kelvin probe (0500) of the present embodiment has a “first probe part” (0501), a “second probe part” (0502), and an “insulating layer part” (0503).
  • first probe part (0501) and “second probe part” (0502) are used to conduct electricity through the element to investigate the electrical characteristics of the element or the light emission characteristics of the LED. It is. These configurations are the same as those of the Kelvin probe of the second embodiment.
  • the "insulating layer part” (0503) is disposed so as to be sandwiched between the first probe part (0501) and the second probe part (0502). In addition to insulating the first measuring element (0501) and the second measuring element (0502), the first measuring element (0501) and the second measuring element (0502) are integrated together.
  • the insulating layer portion (0503) is made of an insulator that does not conduct electricity.
  • the insulating layer portion (0503) may be configured not only with a single insulator but also with a plurality of insulator forces.
  • the insulation layer part (0503) has a sufficient thickness to electrically insulate the first probe part (0501) and the second probe part (0502).
  • the thickness of the insulating layer (0503) is preferably 5 ⁇ m or more and 20 ⁇ m or less.
  • the width of the first and second probe parts is about 20 to 40 m.
  • the width of the test connection pad normally used is usually about 80 ⁇ m, so the width of the Kelvin probe is determined according to the size of the connection pad as described above.
  • the Kelvin probe of the present embodiment may be manufactured by the method for manufacturing a Kelvin probe described in the first embodiment. If the manufacturing method of Embodiment 1 is used, microfabrication is facilitated, and a Kelvin probe suitable for inspection of microelements can be manufactured.
  • the Kelvin probe of the present embodiment may have a structure in which the insulating layer portion (0603) is not arranged at the tip portion.
  • the insulating layer part (0603) is arranged to the tip, only the insulating layer part comes into contact with the connection pad of the object to be measured, and the first measuring part (0601) and the second measuring part (06 02) of the object to be measured Insufficient contact with the connection pad, resulting in poor measurement results Because there are things.
  • the range of the tip is the same as in the first embodiment.
  • Embodiment 3 Effect>
  • the presence of the insulating layer can prevent conduction due to contact between the probe elements, and can further improve the measurement accuracy. Also, by integrating the insulating layer with the measuring element, the distance between the pair of measuring elements can be narrowed, making it suitable for inspection of miniaturized elements.
  • This embodiment is based on Embodiments 2 and 3, and the tip is bent, so that the probe has elasticity, and the tip of the probe wears out and the length of the probe pair is different.
  • the present invention relates to a Kelvin probe that can accurately measure.
  • the Kelvin probe of this embodiment is characterized in that the tip is bent.
  • the probe is not elastic in the direction parallel to the longitudinal direction, but is elastic in the direction perpendicular to the longitudinal direction, so the tip of the probe is elastic in the direction perpendicular to the connection pad surface of the object to be measured. It becomes possible to move.
  • the bending angle is most preferably 90 degrees, but is not limited to this angle.
  • FIG. 7 shows an example in which the Kelvin probe is bent in a direction perpendicular to the plane including the first probe portion (0701) and the second probe portion (0702).
  • FIG. 8 shows an example in which the shape of the first probe part (0801) and the second probe part (0803) is the same as that of FIG. 7, and an insulating layer part (0802) is arranged between them. did.
  • the bending of the tip of the Kelvin probe may be made on one side of the probe pair!
  • the Kelvin probe is bent toward the second probe part as viewed from the first probe part (0901).
  • FIG. 10 shows an example in which the shape of the first probe part (1001) and the second probe part (1003) is the same as that of FIG. 9, and the insulating layer part (1002) is arranged between them. expressed.
  • Embodiment 5 Concept>
  • the Kelvin probe of this embodiment is characterized in that one of the two measuring elements constituting the Kelvin probe can be held, so that both of the two measuring elements can reliably contact the inspection object. To do.
  • FIG. 14 shows an example of the appearance of the Kelvin probe of the present embodiment and the state when the Kelvin probe contacts the inspection object.
  • the Kelvin probe includes a first probe part (1401), a second probe part (1402), and an insulating layer (1403).
  • the first probe part (1401) and the second probe part are insulated by an insulating layer (1403).
  • the Kelvin probe of the present embodiment has an elastic structure that can be elastically contacted with the object to be inspected (1404) when only one of the first probe portion ( 1401 ) or the second probe portion (1402) is pinched. Have In the example of FIG. 14, only the second probe portion (1402) is held.
  • the insulating layer (1403) is configured such that the first probe part (1401) and the second probe part (1402) are partially fixed, and the vicinity of the tip part of the probe is not fixed.
  • the elastic structure is formed. Therefore, the tip portion where the second probe portion (1402) is not fixed can be held away from the first probe portion and can be inertially pinched.
  • the amount of protrusion of the first probe part (1401) and the second probe part (1402) differs toward the inspection object (1404). That is, the tip of the first probe part (1401) and the tip of the second probe part (1402) are arranged so that they are at different distances than the inspection target (1404) force is at the same distance. .
  • the second probe portion (1402) protrudes more than the first probe portion (1401). By doing so, the second probe portion (1402) first comes into contact with the object to be inspected, and the first probe portion (1401) can also contact the object to be inspected by being elastically pinched (see FIG. 14 (b)).
  • the second measurement part (1401) and the second measurement part (1402) are both in contact with the inspection object when the second measurement is performed.
  • the second measuring element (1402) has elasticity so that the load applied to the object to be inspected (1404) through the element (1402) is 10 g weight or less.
  • Embodiment 6 Concept>
  • the Kelvin probe of this embodiment has a structure in which the vicinity of the tip of two measuring elements is in contact before the Kelvin probe contacts the inspection object, and the two measuring elements are separated after contacting the inspection object. Yes.
  • FIG. 15 shows an example of the Kelvin probe of this embodiment.
  • the Kelvin probe of this embodiment when the vicinity of the tip of either the V or the displacement probe part is not in contact with the object to be inspected, the vicinity of the tip of both probe parts is in contact, and the tip of one of the probe parts Due to the contact pressure when the vicinity is in contact with the object to be inspected, the contact portion that is in contact is stagnated, and the contact state is changed to a non-contact state.
  • the contact state is a state in which the first probe part (1501) and the second probe part (1502) are in contact near the tip, that is, the first measurement part. This represents a state in which the slave part and the second probe part are conducting.
  • the second probe portion (1502) When the second probe portion (1502) first contacts the object to be inspected (1533), it is stiffened by elasticity and the force of the first probe portion (1501) is also released (FIG. 15 (b)). By doing so, it is possible to further miniaturize the tip portion that does not need to be insulated. it can.
  • the second probe portion (1502) comes into contact with the object to be inspected (1503) first, the first probe portion (15 01) is separated from the force, so that the conductive state force becomes non-conductive and the resistance value increases. .
  • the first measurement element part (1501) and the second measurement element part (1502) again conduct through the inspection object, so that the resistance value decreases. Therefore, by measuring the resistance value, it can be determined whether the first probe portion (1501) or the second probe portion (1502) is in contact, so that the descending speed of the Kelvin probe can be determined. Control becomes easy.
  • the Kelvin probe of this embodiment can be used for detecting fine elements by miniaturizing the tip. Also, the descending speed of the Kelvin probe can be controlled easily, so that the Kelvin probe and the inspection object are not damaged!
  • Embodiment 7 Concept>
  • the Kelvin probe of the present embodiment has a structure in which one of the two measuring elements has a small elasticity and the other has a structure having a large elasticity, so that only one of the two measuring elements is included. It is characterized by being able to.
  • FIG. 16 shows an example of the Kelvin probe of this embodiment.
  • the Kelvin probe of this embodiment is composed of a first probe part (1601) and a second probe part (1602).
  • the first probe part (1601) has a smaller elasticity than the second probe part (1602), and the second probe part (1602) has an elasticity less than that of the first probe part (1601).
  • High elasticity means a property that tends to stagnate, and is achieved by making the shape thin or using a material having high elasticity.
  • FIG. 17 shows another example of the Kelvin probe of this embodiment and the manufacturing process thereof.
  • the first stylus part (1701) is also made of tungsten-based butter material force
  • the second stylus part (1702) is made of stainless steel wire-like material.
  • the tungsten barta-based material is a material whose main component is tungsten and is thicker than the second probe portion (1702).
  • the stainless steel wire-like material is made of stainless steel as a main component and is thinner than the first probe portion (1701).
  • the wire-like material is not limited to a thin thread-like material, and may be an elastic thin, plate-like material as shown in FIG.
  • the first stylus part (1701) is manufactured by cutting the tip of a bar-shaped tungsten-based barter material and flattening one surface.
  • the second probe portion (1702) is obtained by processing a stainless steel wire-like material as shown in FIG. 17 into a shape with a sharpened tip and bending the tip.
  • An insulating layer is attached to the flat surface of the first probe portion (1701), and a second probe portion is attached thereon, thereby completing the Kelvin probe.
  • one of the two measuring elements has a property of being easily squeezed, and the other has a property of being hard, so that the Kelvin probe is not deformed and is in contact with the object to be inspected. can do.
  • Embodiment 8 Concept>
  • two measuring elements are in contact at an acute angle near the tip.
  • FIG. 18-20 show an example of the Kelvin probe of this embodiment.
  • 18 is an overall view of the Kelvin probe
  • FIG. 19 is an enlarged view of the tip of the Kelvin probe
  • FIG. 20 is a cross-sectional view of the Kelvin probe.
  • the leading end line (1803) of the second probe part (1802) is acute with respect to the center line (1804) of the first probe part (1801).
  • the center line (1804) and the tip line (1803) are the central axes at the tip parts of the first probe part (1801) and the second probe part (1802), respectively.
  • FIG. 21 shows another example of the Kelvin probe of the present embodiment.
  • the sharp tip of the second probe portion (2102) is formed by providing a plurality of bent nodes on the second probe portion.
  • the contact angle between the two probe is an acute angle
  • the stress applied to the bent portion of the Kelvin probe can be reduced.
  • the stress applied to the bending portion can be dispersed.
  • Embodiment 9 Concept>
  • the Kelvin probe of this embodiment is characterized in that the tips of the two measuring elements are on different axes with respect to the sliding direction of the probe when contacting the inspection object.
  • FIG. 22 (a) is a top view of the state in which the Kelvin probe of this embodiment is in contact with the inspection object.
  • the tip (2204, 2205) of the first probe part (2201) and the second probe part (2202) are not on one axis with respect to the sliding direction of the probe.
  • the sliding direction of the probe is a direction in which the first probe portion (2201) and the second probe portion (2202) slide on the inspection object after the Kelvin probe is brought into contact with the inspection object (2203).
  • the direction indicated by the arrow is the slip direction.
  • FIG. 22 (b) shows the arrangement when the first probe part and the tips (2206, 2207) of the second probe part are on one axis with respect to the sliding direction of the probe.
  • the Kelvin probe of this embodiment can effectively utilize the area to be inspected by arranging the two measuring elements obliquely with respect to the sliding direction. Therefore, it is suitable for the measurement of miniaturized elements.
  • Embodiment 10 Concept>
  • the present embodiment relates to an inspection apparatus having the Kelvin probe of Embodiments 5 to 9 and an operation method thereof.
  • FIG. 23 shows an overview of the inspection apparatus of this embodiment.
  • the inspection apparatus according to the present embodiment includes an “inspection mounting table” (2301), a “Kelvin probe holding unit” (2302), and a “measurement unit” (2303).
  • the “inspection target mounting table” (2301) mounts the inspection target. On the inspection table (2301) There may be more than one test object to be placed. Moreover, since the inspection object mounting table (2301) is brought into contact with the Kelvin probe, it may be movable up and down.
  • the “Kelvin probe holding part” (2302) holds the Kelvin probe according to any one of Embodiments 5 to 9!
  • the “measurement part” (2303) includes the first measurement part and the second measurement part described in the fifth to ninth embodiments.
  • the inspection apparatus may be provided with a camera for observing whether or not the probe (2303) has contacted the inspection object!
  • FIG. 24 shows an example of a state in which the Kelvin probe holding unit brings the measuring part into contact with the inspection object.
  • the Kelvin probe holding part lowers the tip of the measuring element part (2402) having an elastic structure substantially perpendicular to the inspection target mounting plane of the inspection target mounting table.
  • the reason for descending substantially vertically is as follows.
  • the camera for aligning the Kelvin probe is often installed directly above the inspection target (2403). If the Kelvin probe of the camera force gauge is used, it is easy to see whether the tip of the gauge is directly above the object to be inspected. Therefore, if the tip of the probe is installed directly above the object to be inspected, the probe tip is brought into vertical contact with the object to be inspected, so that the positioning of the Kelvin probe tip can be easily controlled. It becomes.
  • FIG. 25 shows another example of the state in which the Kelvin probe holding unit brings the probe portion into contact with the inspection object.
  • the Kelvin probe holding unit has a measuring part (2501) having no elastic structure at the tip of a measuring part (2502) having an elastic structure with respect to the inspection target mounting plane of the inspection target mounting table. Observe the mounting plane force of the inspection side on the) side and move it down substantially vertically while maintaining an angle ( ⁇ ) of less than 90 degrees.
  • ⁇ angle
  • FIG. 26 shows an example of the operation method of the inspection apparatus of the present embodiment.
  • the shank side is the handle side of the Kelvin probe, which is the right side in Fig. 26.
  • the second probe (2604) contacts the object to be inspected (2603), and then rotated around the rotation axis (2604), The force that forces the first probe part (2601) and the second probe part (2602) to the shank side is covered.
  • the method for measuring the force applied to the shank side is not limited to the method shown in FIG.
  • the Kelvin probe may be lowered by rotating around the rotation shaft (2604) before the second probe portion (2602) contacts the object to be inspected.
  • FIG. 1 is a conceptual diagram when a semiconductor is inspected by the Kelvin probe of the first embodiment.
  • FIG. 2 is a schematic diagram when the Kelvin probe of Embodiment 1 is brought into contact with the connection pad of the object to be measured.
  • FIG. 3 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the first embodiment.
  • FIG. 4 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the first embodiment.
  • FIG. 5 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a second embodiment.
  • FIG. 6 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the second embodiment.
  • FIG. 7 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
  • FIG. 8 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
  • FIG. 9 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
  • FIG. 10 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the third embodiment.
  • FIG. 11 is a diagram illustrating an example of a Kelvin probe according to the first embodiment.
  • FIG. 14 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a fifth embodiment.
  • FIG. 15 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a sixth embodiment.
  • FIG. 16 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the seventh embodiment.
  • FIG. 18 is a diagram illustrating an example of a Kelvin probe according to an eighth embodiment.
  • FIG. 19 is a diagram illustrating an example of a tip portion of a Kelvin probe according to an eighth embodiment.
  • FIG. 20 shows an example of a Kelvin probe of Embodiment 8.
  • FIG. 21 is a diagram illustrating an example of a tip portion of a Kelvin probe according to an eighth embodiment.
  • ⁇ 22 A diagram showing a state in which the Kelvin probe of Embodiment 9 is in contact with the inspection object.
  • ⁇ 23] A diagram showing an example of the inspection apparatus of the tenth embodiment.
  • FIG. 24 is a diagram illustrating an example of an inspection apparatus according to a tenth embodiment.
  • FIG. 26 is a diagram illustrating an example of an operation method of the inspection apparatus according to the tenth embodiment.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

L’invention se propose de résoudre un problème selon lequel il était impossible de réaliser une inspection de grande précision à cause de l’erreur de mesure d’une inspection électrique ou d’une inspection d’émission du fait de la résistance de contact du film d’oxyde ou de la couche modifiée à la surface du patin de connexion d’un objet à mesurer. On obtient une sonde Kelvin avec une extrémité taraudée par usinage à décharge électrique en joignant un premier substrat conducteur, un second substrat et un isolant en film par liaison à thermocompression. Comme l’extrémité de la sonde Kelvin est taraudée, on peut utiliser la sonde Kelvin pour examiner un dispositif de microfabrication. En donnant à une sonde quelconque ou à la sonde Kelvin une coupe transversale polygonale, on peut conférer une forme plus pointue à l’extrémité, et l’on peut retirer le film d’oxyde ou la couche modifiée à la surface du patin de connexion de l’objet à mesurer. Au moins un côté du polygone peut être incurvé, et un sommet pointu du polygone est amené au contact du patin de connexion de l’objet.
PCT/JP2005/023413 2004-12-22 2005-12-20 Sonde kelvin Ceased WO2006068156A1 (fr)

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JP2006549014A JPWO2006068156A1 (ja) 2004-12-22 2005-12-20 ケルビンプローブ

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JP2004-372010 2004-12-22
JP2004372010 2004-12-22

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WO2006068156A1 true WO2006068156A1 (fr) 2006-06-29

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008116284A (ja) * 2006-11-02 2008-05-22 Takeshi Kaneko コンタクトプローブ、及びコンタクトプローブの製造方法
KR100953287B1 (ko) 2007-03-29 2010-04-20 엔이씨 일렉트로닉스 가부시키가이샤 반도체 검사 장치
JP2017172999A (ja) * 2016-03-18 2017-09-28 ラピスセミコンダクタ株式会社 プローブ
WO2021149668A1 (fr) * 2020-01-24 2021-07-29 ミネベアミツミ株式会社 Sonde, dispositif de mesure et procédé de mesure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0328479U (fr) * 1989-07-28 1991-03-20
JPH03123272U (fr) * 1990-03-29 1991-12-16
JPH08160074A (ja) * 1994-12-01 1996-06-21 Hioki Ee Corp 四端子測定用プローブ
JP2000206146A (ja) * 1999-01-19 2000-07-28 Mitsubishi Electric Corp プロ―ブ針
JP2000346874A (ja) * 1999-06-04 2000-12-15 Micronics Japan Co Ltd プローブ及びプローブカード
JP2003090849A (ja) * 2001-09-20 2003-03-28 Tesetsuku:Kk 電子部品測定装置及び方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0328479U (fr) * 1989-07-28 1991-03-20
JPH03123272U (fr) * 1990-03-29 1991-12-16
JPH08160074A (ja) * 1994-12-01 1996-06-21 Hioki Ee Corp 四端子測定用プローブ
JP2000206146A (ja) * 1999-01-19 2000-07-28 Mitsubishi Electric Corp プロ―ブ針
JP2000346874A (ja) * 1999-06-04 2000-12-15 Micronics Japan Co Ltd プローブ及びプローブカード
JP2003090849A (ja) * 2001-09-20 2003-03-28 Tesetsuku:Kk 電子部品測定装置及び方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008116284A (ja) * 2006-11-02 2008-05-22 Takeshi Kaneko コンタクトプローブ、及びコンタクトプローブの製造方法
KR100953287B1 (ko) 2007-03-29 2010-04-20 엔이씨 일렉트로닉스 가부시키가이샤 반도체 검사 장치
JP2017172999A (ja) * 2016-03-18 2017-09-28 ラピスセミコンダクタ株式会社 プローブ
WO2021149668A1 (fr) * 2020-01-24 2021-07-29 ミネベアミツミ株式会社 Sonde, dispositif de mesure et procédé de mesure
JP2021117085A (ja) * 2020-01-24 2021-08-10 ミネベアミツミ株式会社 プローブ、測定装置、及び測定方法
JP7586645B2 (ja) 2020-01-24 2024-11-19 ミネベアミツミ株式会社 プローブ、測定装置、及び測定方法
JP2024163285A (ja) * 2020-01-24 2024-11-21 ミネベアミツミ株式会社 プローブ、測定装置、及び測定方法

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