WO2006068156A1 - Kelvin probe - Google Patents
Kelvin probe Download PDFInfo
- Publication number
- WO2006068156A1 WO2006068156A1 PCT/JP2005/023413 JP2005023413W WO2006068156A1 WO 2006068156 A1 WO2006068156 A1 WO 2006068156A1 JP 2005023413 W JP2005023413 W JP 2005023413W WO 2006068156 A1 WO2006068156 A1 WO 2006068156A1
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- WO
- WIPO (PCT)
- Prior art keywords
- probe
- kelvin
- kelvin probe
- tip
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06738—Geometry aspects related to tip portion
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
Definitions
- LED Light-emitting diode
- LD semiconductor laser
- connection pads include aluminum (A1), copper (Cu), and gold (Au). However, when aluminum and copper are oxidized and soon oxidized, a strong oxide film (A10, CuO, Cu0) is formed. In the case of gold, the surface is free of oxides and nitrides.
- a quality layer is formed. Therefore, in order to improve the electrical contact between the probe and the connection pad of the object to be measured, it is necessary to remove the oxide film or the deteriorated layer so that the probe does not contact the aluminum of the connection pad of the object to be measured. Don't be.
- Patent Document 1 proposes a method in which the probe is brought into contact with the connection pad of the object to be measured obliquely to remove the oxide film on the surface. Further, Patent Document 2 proposes that the probe tip be made of a material different from the material of the probe body in order to prevent an oxide film from adhering to the probe tip. Patent Document 3 proposes a method of reducing the oxide film by having a semiconductor photocatalyst at the probe tip.
- a four-terminal method (Kelvin method) is known as a method for preventing an error caused by contact resistance between a connection pad of a device under test and a probe.
- the current application terminal and voltage Separating the measurement terminal eliminates the influence of contact resistance, and enables high-precision measurement even if there is an oxide film on the connection pad that is the object to be measured.
- the four probe method uses two probe as a pair, and the pair of probe is a Kelvin probe!
- Patent Document 1 JP-A-11 148947
- Patent Document 2 JP 2004-226204 A
- Patent Document 3 JP 2003-207522
- Patent Document 4 JP-A 63-175771 Means for solving the problem
- the present inventors provide the following Kelvin probe, a measuring device having a Kelvin probe, and a method for producing the Kelvin probe.
- a first invention is a first stylus part, a second stylus part insulated from the first stylus part by an insulating layer, and a powerful Kelvin probe.
- a Kelvin probe having an elastic structure that can be elastically contacted with an object to be inspected when only one of the two probe parts is pinched.
- the insulating layer partially secures the first probe part and the second probe part, and the vicinity of the tip part of the probe is not fixed, thereby forming the elastic structure.
- a Kelvin probe according to the first invention is provided.
- the third invention is
- the Kelvin probe according to the first or second invention is provided in which the contacting probe part stagnate by the contact pressure, and the contact state is changed to the non-contact state.
- the first probe part is an application needle having a smaller elasticity than the second probe part, and the second probe part is elastic compared to the first probe part.
- a first force which is a detection needle having a large structure.
- a Kelvin probe according to any one of the third invention is provided.
- the fifth invention is the Kelvin probe according to any one of the fourth invention, wherein the first probe part is a tungsten-based barta material force and the second probe part is a stainless steel wire-like material force. I will provide a.
- the sixth invention provides the Kelvin probe according to any one of the fifth invention, in which the first force in which the protruding amount of the first probe part and the second probe part differs depending on the object to be inspected.
- a seventh invention provides the Kelvin probe according to the sixth invention, wherein the second probe part protrudes more than the first probe part toward the test object. According to the eighth aspect of the invention, when both the first probe part and the second probe part come into contact with the inspection object by pressing against the object to be inspected, the inspection object is passed through the second probe part.
- a ninth invention provides the Kelvin probe according to any one of the first to eighth inventions, wherein the tip line of the second probe part is an acute angle with respect to the center line of the first probe part. In a tenth aspect of the present invention, the tip line having the acute angle of the second probe portion is connected to the second probe portion.
- the Kelvin probe according to the ninth invention is provided by providing a plurality of bent nodes. In the eleventh invention, the first probe part and the tip of the second probe part are on one axis with respect to the sliding direction of the probe. Provide the described Kelvin probe.
- a twelfth invention provides an inspection apparatus having the Kelvin probe according to any one of the first to eleventh inventions.
- a thirteenth invention has a test object mounting table for mounting a test object, and a Kelvin probe holding part for holding the Kelvin probe according to any one of the first power eleventh invention, The probe holding section provides the inspection apparatus according to the eleventh aspect, wherein the probe holding section lowers the tip of the measuring element section having an elastic structure substantially perpendicular to the inspection target mounting plane of the inspection target mounting base.
- a fourteenth aspect of the invention includes an inspection target mounting table for mounting an inspection target, and a Kelvin probe holding unit for holding the Kelvin probe according to any one of the first to eleventh aspects of the invention.
- the Kelvin probe holder is configured such that the tip of the measuring part having an elastic structure with respect to the inspection target mounting plane of the inspection target mounting table is viewed from the inspection target mounting plane on the measuring part side having no elastic structure.
- An inspection apparatus according to the tenth aspect of the present invention is provided that descends substantially vertically while maintaining an angle of less than degrees.
- a fifteenth aspect of the invention is an operation method of an inspection apparatus having the Kelvin probe according to any one of the sixth force of the eleventh aspect of the invention, and at the latest, the first probe part or the second probe part Provided is a method of operating an inspection apparatus having a shank side force application step of applying a force toward the shank side to the Kelvin probe after any one of the above contacts an inspection object.
- the sixteenth invention includes a first substrate preparing step of preparing a first substrate, and a film in which a film-like insulating film is disposed on the first substrate surface prepared in the first substrate preparing step The step of arranging the second substrate so as to sandwich the film-like insulating film arranged in the film-like insulating film arranging step, and the step of arranging the second substrate.
- a method for manufacturing a Kelvin probe comprising: an outer shape processing step for processing the block by wire electric discharge machining so that the first substrate and the second substrate are isolated from each other to form a measuring element.
- the seventeenth invention is the thickness of the film-like insulating film
- the eighteenth invention provides the method for producing a Kelvin probe according to the sixteenth or seventeenth invention, wherein a cut-out width cut out in the outer shape processing step is in a range of 5 microns to 2 mm.
- the nineteenth invention provides a Kelvin probe having a polygonal cross section.
- a twenty-second invention provides the Kelvin probe according to the nineteenth invention, wherein the polygon is a polygon that is not a regular polygon.
- a twenty-first invention provides the Kelvin probe according to the nineteenth or twenty-first invention, wherein the polygon is an odd-sided polygon having an odd number of sides constituting the polygon.
- a twenty-second invention provides the Kelvin probe according to any one of the nineteenth force and the twenty-first invention, wherein the polygonal cross section is in a shank portion.
- the polygonal cross section is at the tip, and when the tip is brought into contact with the connection pad of the object to be measured, the polygonal cross section is selected from any one of the vertices of the polygon.
- a Kelvin probe according to any one of the nineteenth to twenty-first inventions configured to contact a connection pad contact surface is provided.
- the polygonal cross section is at the tip, and when the tip is brought into contact with the connection pad of the object to be measured, the apex force of the polygon is also in contact with the connection pad.
- a Kelvin probe according to any one of the nineteenth to twenty-first aspects of the invention configured to prevent contact with a surface is provided.
- the polygonal cross section has a curved surface as a surface to be contacted with the connection pad of the object to be measured at the tip of the Kelvin probe.
- a Kelvin probe according to any one of the twenty-first inventions is provided.
- a twenty-sixth aspect of the invention provides the Kelvin probe according to any one of the twenty-fifth aspect of the invention, wherein at least one side of the polygon is replaced with a straight line.
- the twenty-seventh aspect of the invention is arranged so as to be sandwiched between the first probe part and the second probe part, the first probe part, and the second probe part.
- a Kelvin device comprising: an insulating layer portion for integrating the first measuring portion and the second measuring portion.
- a probe Provide a probe.
- a twenty-eighth aspect of the invention provides the Kelvin probe according to the twenty-seventh aspect of the invention, which is manufactured by the method for manufacturing a Kelvin probe according to any one of the sixteenth force and the eighteenth aspect of the invention. 20th
- a ninth invention provides the Kelvin probe according to the twenty-seventh or twenty-eighth invention, wherein the insulating layer portion is not arranged at the tip portion.
- a thirtieth aspect of the invention provides the Kelvin probe according to any one of the twenty-ninth aspect, wherein the nineteenth force having a bent tip portion.
- a thirty-first aspect of the invention provides the Kelvin probe according to the thirty-first aspect of the invention, wherein the bending is made on either side of the probe pair.
- the Kelvin probe tip can be finely applied by the Kelvin probe manufacturing method of the present invention
- the use of the Kelvin probe obtained by the Kelvin probe manufacturing method of the present invention makes it possible to obtain a microelement. Inspection can be performed.
- the oxide film or the altered layer on the connection pad surface of the object to be measured can be easily removed. Therefore, the Kelvin probe can come into contact with the aluminum material portion of the connection pad of the object to be measured, and measurement errors due to contact resistance can be reduced.
- the orientation of the probe can be easily performed when the probe is attached to the probe device.
- the first embodiment will mainly describe claims 16 to 18.
- the second embodiment will mainly describe claims 19 to 26.
- the third embodiment will mainly describe claims 27 to 29.
- the fourth embodiment will mainly describe claims 30 and 31.
- the fifth embodiment will mainly describe claims 1, 2, 6, 7, and 8.
- Embodiment 6 will mainly describe claim 3.
- the seventh embodiment will mainly describe claims 4 and 5.
- the eighth embodiment will mainly describe claims 9 and 10.
- the ninth embodiment will mainly describe claim 11.
- the tenth embodiment will mainly describe claims 12 to 15.
- Embodiment 1 Concept> The present embodiment relates to a method of manufacturing a Kelvin probe that can electrically insulate a pair of measuring elements by disposing an insulating layer between the pair of measuring elements.
- Fig. 13 shows a conceptual diagram of the manufacturing method of the Kelvin probe of this embodiment. First, a film-like insulating film is sandwiched between the first substrate and the second substrate and pressed while being heated using a roller (Next, the block is cut by a discharge cage (b). The resulting block is further finely added to form a Kelvin probe (c).
- FIG. 12 shows an example of the manufacturing process of the Kelvin probe of this embodiment.
- the manufacturing process of this embodiment will be described for each process with reference to FIG.
- the first substrate preparation step (S1201) is a step of preparing the first substrate.
- the material of the first substrate is mainly composed of a conductive material.
- the conductive material is preferably as hard as possible in order to remove the oxide film.
- tungsten, tungsten alloy, tungsten carbide, beryllium copper, or the like is preferable as the conductive material.
- the Kelvin probe may be composed of a plurality of types of materials other than a single type of material.
- the film-like insulating film disposing step (S1202) is a step of disposing a film-like insulating film on the first substrate surface prepared in the first substrate preparing step. Since the film-like insulating film is the original material of the insulating layer constituting the Kelvin probe, the material can at least ultimately become the insulating layer. However, it is not always necessary to have an insulating property during the placement process work, and it is sufficient if the insulating property is obtained through a process such as heating in a later step.
- This arranging step can be performed by placing a film-like insulating film on the first substrate and pressurizing with a roller. Of course, you can simply place it without using a roller.
- the thickness of the film-like insulating film is preferably 5 microns or more and 50 microns or less. More preferably, it is 5 microns or more and 25 microns or less. If the film insulation film is 5 microns or less, the product characteristic strength of the film insulation film cannot accurately form a gap. If the film insulation film is 50 microns or more, the Kelvin probe becomes large and the microelements cannot be inspected. It is. Here, the fine element corresponds to a light emitting diode element, for example. However, the film insulation film in this film insulation film arrangement process Does not mean the thickness of the insulating layer of the Kelvin probe immediately after completion.
- the thickness of the film-like insulating film is usually reduced by heat curing. Therefore, it is necessary to determine the thickness of the film-like insulating film in this process after taking into consideration in advance how much the thickness will decrease in the subsequent process.
- An important reason for using this film-like insulating film is that a uniform thickness can be realized over a wide area. If a uniform thickness cannot be realized, the yield of products that satisfy the gap standard, which is the thickness of a predetermined insulating layer, will be deteriorated. Moreover, if a uniform gap cannot be realized, the mechanical strength of the insulating layer for integrating the two measuring elements will be insufficient.
- the film-like insulating film is a film in which a resin (resist layer) hardened by light is sandwiched by a polyethylene and polyester film, but in the present invention, it reacts with light.
- a resin resist layer
- the film-like insulating film is a film in which a resin (resist layer) hardened by light is sandwiched by a polyethylene and polyester film, but in the present invention, it reacts with light.
- a technique such as spin coating rather than a film-like insulating film. This is because the products with film-like insulating films have a large thickness variation rate because the absolute value of the difference in thickness does not change even if they are thin.
- spin coating if spin coating is used, a bulge is formed on the end face of the substrate, so the problem of gap accuracy degradation due to this bulge must be solved.
- the second substrate disposing step (S1203) is a step of disposing the second substrate so as to sandwich the film insulating film disposed in the film insulating film disposing step.
- the material of the second substrate is the same as the material of the first substrate.
- the block creation step (S1204) the first substrate placed with the film-like insulating film sandwiched in the second substrate placement step and the second substrate are pressed while heating.
- This is a process of forming a block integrally with a film-like insulating film.
- the pressing is performed by placing a film-like insulating film between the first substrate and the second substrate, and pressing the first substrate and the second substrate in the adhesion direction with a roller. .
- a dry film laminator is used as the roller.
- the first substrate and the film-like insulating film, and the second substrate and the film-like insulating film are firmly fixed together as a block. It becomes.
- a method of compressing and integrating with a press machine a method of vapor-depositing an insulating film layer by CVD, a first substrate, a film-like insulating film, and a second substrate placed on a jig and heating and screwing
- a method of compressing with is also a method of compressing with.
- the outer shape processing step (S1205) is a step of processing the block by wire electric discharge machining so that each of the first substrate and the second substrate becomes a measuring element while being insulated.
- the wire discharge force is a method in which a metal wire and a target object are used as electrodes to perform calorie by discharging between them. If the wire discharge force is used, even a hard metal such as tungsten can be processed into a complicated shape. Wire electrical discharge machining can be processed with a conductive material. Insulators cannot be processed. Therefore, it seems that the film-like insulating film cannot be processed, but the block is mainly made of a conductive material, and the film-like insulating film is sufficiently thin so that it is processed together with the conductive material. be able to.
- the cutting width to be cut out in the outer casing process is in the range of 5 microns to 2 mm.
- the cut-out width means the length in the direction perpendicular to the cut surface of the cut block. This is because it is technically difficult to cut the cutting width to 5 microns or less, and if the cutting width is 2 mm or more, the Kelvin probe becomes large and is not suitable for the measurement of fine elements. Since the Kelvin probe generally has a complicated shape having a pointed tip, it is difficult to achieve a desired shape by using only a cutting blade or only a polishing process. An important point of the present invention is that the wire discharge force is used in this outer shape caching process, and this makes it possible to realize a Kelvin probe having a complicated shape for the first time.
- the Kelvin probe can be finely processed, a Kelvin probe suitable for measurement of a miniaturized element can be manufactured.
- Embodiment 2 Concept>
- FIG. 1 shows a state in which a semiconductor is inspected using the Kelvin probe of this embodiment.
- the Kelvin probe uses two gauges as a pair, and uses a pair of Kelvin probes on the current entrance and exit sides respectively, so use at least 4 gauges in total.
- the Kelvin probe is fixed, and the semiconductor support is Test by moving in the direction of the mark.
- FIG. 2 shows how the oxide film on the surface of the connection pad of the object to be measured is removed using the Kelvin probe of this embodiment.
- the connection pad of the DUT shown in Fig. 2 is made of aluminum (0203) as the base material, and the surface is an oxide film (A1 0)
- the Kelvin probe (0201) is in contact only with the oxide film (0202), which is an insulator, so the contact resistance is large and accurate measurement cannot be performed. However, if the tip of the Kelvin probe is sharp, as shown in Fig. 2 (b), the Kelvin probe (0201) removes the hard oxide film (0202) on the surface and connects the object to be measured. Can contact with aluminum (0203) which is the pad body.
- Embodiment 2 Configuration>
- the Kelvin probe of this embodiment has a polygonal cross section.
- the cross section is a plane perpendicular to the longitudinal direction of the probe.
- the cross section is rectangular, but not limited to this example, the polygon may be a plane figure surrounded by three or more line segments. Also, as in the example in Figure 4, at least one side of the polygon may be replaced with a straight line to form a curve. Further, it is not necessary for the entire cross section of the Kelvin probe to be a polygon, and a part of the cross section may be a polygon.
- a “Kelvin probe having a polygonal cross section” means that the cross section of the entire Kelvin probe is polygonal, or only the cross section of the probe constituting the Kelvin probe is polygonal. It may be there.
- the Kelvin probe of the present embodiment uses two measuring elements as a pair. Therefore, there are two measuring elements as shown in FIG. 3 or FIG. 4, and the Kelvin probe of this embodiment is obtained.
- the cross sections of both of the two probe elements need to be polygonal, and one of the two probe elements has the shape shown in FIG. 3 or FIG. If it is a circle)
- the polygon is preferably a polygon that is not a regular polygon. Since the Kelvin probe having a regular n-square cross section has n-fold symmetry with respect to the central axis, it is difficult to visually align it. Since normal orientation is performed by image recognition, Direction alignment becomes easier when the cross section is not a regular polygon. The higher the anisotropy, the easier the orientation is. Therefore, it is preferable that the polygon is as different as possible from the regular polygon.
- the polygon is more preferably an odd-sided polygon in which the number of sides constituting the polygon is an odd number.
- the odd-sided polygon is a triangle or a pentagon. This is because even-sided polygons (rectangles, hexagons, etc.) are more symmetrical, and odd-sided polygons are easier to align.
- the Kelvin probe of the present embodiment may have a polygonal cross section in the shank portion of the Kelvin probe.
- a shank part is an attachment part when attaching a Kelvin probe to a probe apparatus. This is because the cross section of the shank portion is polygonal, so that it is easy to align the direction when attaching the Kelvin probe.
- the material of the Kelvin probe is mainly composed of a conductive material.
- the conductive material is preferably as hard as possible in order to remove the oxide film.
- tungsten, tungsten alloy, tungsten carbide, beryllium copper, and the like are preferable as the conductive material.
- the Kelvin probe may be composed of a plurality of kinds of materials other than a force composed of only one kind of material.
- the surface of the portion of the Kelvin probe that contacts the connection pad of the object to be measured is covered with another material so that the surface is not easily oxidized.
- the material that covers the surface include gold and platinum. These materials can be attached as a thin film to the tip of the Kelvin probe by fitting or vapor deposition.
- the radius of curvature of the apex angle of the tip is 1 ⁇ m or less. If the radius of curvature exceeds this value, the oxide film cannot be cut sufficiently, and the Kelvin probe cannot sufficiently contact the connection pad of the object to be measured.
- the cross section of the polygon is at the tip of the Kelvin probe, and when the tip is brought into contact with the object to be measured, the connection pad contact surface of the object to be measured starts from any one of the polygonal vertices. It can be configured to touch.
- the tip refers to the part with a tip force of 20 to 1000 m. Even if the cross-section is polygonal, can the surface oxide film, etc. be sufficiently removed by simply contacting the flat part or one side of the tip with the connection pad of the object to be measured? That's it.
- the Kelvin probe In order for the sharp part (polygonal apex) at the tip of the Kelvin probe to scrape the oxide film, the Kelvin probe must be contacted at an angle. Preferably, the angle formed by the tip surface and the oxide film surface is 15 degrees or more.
- the cross section of the polygon is at the tip of the Kelvin probe.
- the connection pad contact of the object to be measured is contacted from the apex of the polygon. It is configured so that it does not touch the touch surface.
- the oxide film can be removed as described above.
- the oxide film not only the oxide film but also the connection pad body of the object to be measured may be damaged. If the connection pad body of the object to be measured is damaged, contact resistance increases due to surface irregularities, and accurate inspection cannot be performed. Therefore, in some cases, it is more preferable to bring the portion (side or flat portion) of the tip of the Kelvin probe into contact with the connection pad of the object to be measured.
- the ability to tolerate scratches to some extent should be selected according to the connection pad material and customer requirements.
- the polygonal cross section is connected to the tip of the Kelvin probe and the surface to be contacted with the connection pad of the object to be measured may be a curved surface. This is because if the tip end is a curved surface, the connection pad body is hardly damaged.
- the curvature radius of the curved surface is 5 m or more so as not to damage the body of the connection pad of the object to be measured.
- the Kelvin probe of the present embodiment is preferably manufactured by a discharge cage. According to the discharge caloe, it is hard and suitable for microfabrication of materials!
- the Kelvin probe of this embodiment has a sharp tip shape, the oxide film or the altered layer attached to the surface of the connection pad of the object to be measured can be removed, and the metal of the contact pad main body and the Kelvin probe can be removed.
- the tip can be in direct contact. Therefore, the contact resistance caused by the oxide film or the altered layer can be reduced, and the measurement accuracy can be improved.
- the cross-sectional shape is polygonal, it is easy to align the direction when installing the Kelvin probe.
- the present embodiment relates to a Kelvin probe based on the second embodiment, in which an insulating layer is sandwiched between a pair of measuring elements, and the pair of measuring elements and the insulating layer are integrated.
- FIG. 5 shows the Kelvin probe of this embodiment.
- the Kelvin probe (0500) of the present embodiment has a “first probe part” (0501), a “second probe part” (0502), and an “insulating layer part” (0503).
- first probe part (0501) and “second probe part” (0502) are used to conduct electricity through the element to investigate the electrical characteristics of the element or the light emission characteristics of the LED. It is. These configurations are the same as those of the Kelvin probe of the second embodiment.
- the "insulating layer part” (0503) is disposed so as to be sandwiched between the first probe part (0501) and the second probe part (0502). In addition to insulating the first measuring element (0501) and the second measuring element (0502), the first measuring element (0501) and the second measuring element (0502) are integrated together.
- the insulating layer portion (0503) is made of an insulator that does not conduct electricity.
- the insulating layer portion (0503) may be configured not only with a single insulator but also with a plurality of insulator forces.
- the insulation layer part (0503) has a sufficient thickness to electrically insulate the first probe part (0501) and the second probe part (0502).
- the thickness of the insulating layer (0503) is preferably 5 ⁇ m or more and 20 ⁇ m or less.
- the width of the first and second probe parts is about 20 to 40 m.
- the width of the test connection pad normally used is usually about 80 ⁇ m, so the width of the Kelvin probe is determined according to the size of the connection pad as described above.
- the Kelvin probe of the present embodiment may be manufactured by the method for manufacturing a Kelvin probe described in the first embodiment. If the manufacturing method of Embodiment 1 is used, microfabrication is facilitated, and a Kelvin probe suitable for inspection of microelements can be manufactured.
- the Kelvin probe of the present embodiment may have a structure in which the insulating layer portion (0603) is not arranged at the tip portion.
- the insulating layer part (0603) is arranged to the tip, only the insulating layer part comes into contact with the connection pad of the object to be measured, and the first measuring part (0601) and the second measuring part (06 02) of the object to be measured Insufficient contact with the connection pad, resulting in poor measurement results Because there are things.
- the range of the tip is the same as in the first embodiment.
- Embodiment 3 Effect>
- the presence of the insulating layer can prevent conduction due to contact between the probe elements, and can further improve the measurement accuracy. Also, by integrating the insulating layer with the measuring element, the distance between the pair of measuring elements can be narrowed, making it suitable for inspection of miniaturized elements.
- This embodiment is based on Embodiments 2 and 3, and the tip is bent, so that the probe has elasticity, and the tip of the probe wears out and the length of the probe pair is different.
- the present invention relates to a Kelvin probe that can accurately measure.
- the Kelvin probe of this embodiment is characterized in that the tip is bent.
- the probe is not elastic in the direction parallel to the longitudinal direction, but is elastic in the direction perpendicular to the longitudinal direction, so the tip of the probe is elastic in the direction perpendicular to the connection pad surface of the object to be measured. It becomes possible to move.
- the bending angle is most preferably 90 degrees, but is not limited to this angle.
- FIG. 7 shows an example in which the Kelvin probe is bent in a direction perpendicular to the plane including the first probe portion (0701) and the second probe portion (0702).
- FIG. 8 shows an example in which the shape of the first probe part (0801) and the second probe part (0803) is the same as that of FIG. 7, and an insulating layer part (0802) is arranged between them. did.
- the bending of the tip of the Kelvin probe may be made on one side of the probe pair!
- the Kelvin probe is bent toward the second probe part as viewed from the first probe part (0901).
- FIG. 10 shows an example in which the shape of the first probe part (1001) and the second probe part (1003) is the same as that of FIG. 9, and the insulating layer part (1002) is arranged between them. expressed.
- Embodiment 5 Concept>
- the Kelvin probe of this embodiment is characterized in that one of the two measuring elements constituting the Kelvin probe can be held, so that both of the two measuring elements can reliably contact the inspection object. To do.
- FIG. 14 shows an example of the appearance of the Kelvin probe of the present embodiment and the state when the Kelvin probe contacts the inspection object.
- the Kelvin probe includes a first probe part (1401), a second probe part (1402), and an insulating layer (1403).
- the first probe part (1401) and the second probe part are insulated by an insulating layer (1403).
- the Kelvin probe of the present embodiment has an elastic structure that can be elastically contacted with the object to be inspected (1404) when only one of the first probe portion ( 1401 ) or the second probe portion (1402) is pinched. Have In the example of FIG. 14, only the second probe portion (1402) is held.
- the insulating layer (1403) is configured such that the first probe part (1401) and the second probe part (1402) are partially fixed, and the vicinity of the tip part of the probe is not fixed.
- the elastic structure is formed. Therefore, the tip portion where the second probe portion (1402) is not fixed can be held away from the first probe portion and can be inertially pinched.
- the amount of protrusion of the first probe part (1401) and the second probe part (1402) differs toward the inspection object (1404). That is, the tip of the first probe part (1401) and the tip of the second probe part (1402) are arranged so that they are at different distances than the inspection target (1404) force is at the same distance. .
- the second probe portion (1402) protrudes more than the first probe portion (1401). By doing so, the second probe portion (1402) first comes into contact with the object to be inspected, and the first probe portion (1401) can also contact the object to be inspected by being elastically pinched (see FIG. 14 (b)).
- the second measurement part (1401) and the second measurement part (1402) are both in contact with the inspection object when the second measurement is performed.
- the second measuring element (1402) has elasticity so that the load applied to the object to be inspected (1404) through the element (1402) is 10 g weight or less.
- Embodiment 6 Concept>
- the Kelvin probe of this embodiment has a structure in which the vicinity of the tip of two measuring elements is in contact before the Kelvin probe contacts the inspection object, and the two measuring elements are separated after contacting the inspection object. Yes.
- FIG. 15 shows an example of the Kelvin probe of this embodiment.
- the Kelvin probe of this embodiment when the vicinity of the tip of either the V or the displacement probe part is not in contact with the object to be inspected, the vicinity of the tip of both probe parts is in contact, and the tip of one of the probe parts Due to the contact pressure when the vicinity is in contact with the object to be inspected, the contact portion that is in contact is stagnated, and the contact state is changed to a non-contact state.
- the contact state is a state in which the first probe part (1501) and the second probe part (1502) are in contact near the tip, that is, the first measurement part. This represents a state in which the slave part and the second probe part are conducting.
- the second probe portion (1502) When the second probe portion (1502) first contacts the object to be inspected (1533), it is stiffened by elasticity and the force of the first probe portion (1501) is also released (FIG. 15 (b)). By doing so, it is possible to further miniaturize the tip portion that does not need to be insulated. it can.
- the second probe portion (1502) comes into contact with the object to be inspected (1503) first, the first probe portion (15 01) is separated from the force, so that the conductive state force becomes non-conductive and the resistance value increases. .
- the first measurement element part (1501) and the second measurement element part (1502) again conduct through the inspection object, so that the resistance value decreases. Therefore, by measuring the resistance value, it can be determined whether the first probe portion (1501) or the second probe portion (1502) is in contact, so that the descending speed of the Kelvin probe can be determined. Control becomes easy.
- the Kelvin probe of this embodiment can be used for detecting fine elements by miniaturizing the tip. Also, the descending speed of the Kelvin probe can be controlled easily, so that the Kelvin probe and the inspection object are not damaged!
- Embodiment 7 Concept>
- the Kelvin probe of the present embodiment has a structure in which one of the two measuring elements has a small elasticity and the other has a structure having a large elasticity, so that only one of the two measuring elements is included. It is characterized by being able to.
- FIG. 16 shows an example of the Kelvin probe of this embodiment.
- the Kelvin probe of this embodiment is composed of a first probe part (1601) and a second probe part (1602).
- the first probe part (1601) has a smaller elasticity than the second probe part (1602), and the second probe part (1602) has an elasticity less than that of the first probe part (1601).
- High elasticity means a property that tends to stagnate, and is achieved by making the shape thin or using a material having high elasticity.
- FIG. 17 shows another example of the Kelvin probe of this embodiment and the manufacturing process thereof.
- the first stylus part (1701) is also made of tungsten-based butter material force
- the second stylus part (1702) is made of stainless steel wire-like material.
- the tungsten barta-based material is a material whose main component is tungsten and is thicker than the second probe portion (1702).
- the stainless steel wire-like material is made of stainless steel as a main component and is thinner than the first probe portion (1701).
- the wire-like material is not limited to a thin thread-like material, and may be an elastic thin, plate-like material as shown in FIG.
- the first stylus part (1701) is manufactured by cutting the tip of a bar-shaped tungsten-based barter material and flattening one surface.
- the second probe portion (1702) is obtained by processing a stainless steel wire-like material as shown in FIG. 17 into a shape with a sharpened tip and bending the tip.
- An insulating layer is attached to the flat surface of the first probe portion (1701), and a second probe portion is attached thereon, thereby completing the Kelvin probe.
- one of the two measuring elements has a property of being easily squeezed, and the other has a property of being hard, so that the Kelvin probe is not deformed and is in contact with the object to be inspected. can do.
- Embodiment 8 Concept>
- two measuring elements are in contact at an acute angle near the tip.
- FIG. 18-20 show an example of the Kelvin probe of this embodiment.
- 18 is an overall view of the Kelvin probe
- FIG. 19 is an enlarged view of the tip of the Kelvin probe
- FIG. 20 is a cross-sectional view of the Kelvin probe.
- the leading end line (1803) of the second probe part (1802) is acute with respect to the center line (1804) of the first probe part (1801).
- the center line (1804) and the tip line (1803) are the central axes at the tip parts of the first probe part (1801) and the second probe part (1802), respectively.
- FIG. 21 shows another example of the Kelvin probe of the present embodiment.
- the sharp tip of the second probe portion (2102) is formed by providing a plurality of bent nodes on the second probe portion.
- the contact angle between the two probe is an acute angle
- the stress applied to the bent portion of the Kelvin probe can be reduced.
- the stress applied to the bending portion can be dispersed.
- Embodiment 9 Concept>
- the Kelvin probe of this embodiment is characterized in that the tips of the two measuring elements are on different axes with respect to the sliding direction of the probe when contacting the inspection object.
- FIG. 22 (a) is a top view of the state in which the Kelvin probe of this embodiment is in contact with the inspection object.
- the tip (2204, 2205) of the first probe part (2201) and the second probe part (2202) are not on one axis with respect to the sliding direction of the probe.
- the sliding direction of the probe is a direction in which the first probe portion (2201) and the second probe portion (2202) slide on the inspection object after the Kelvin probe is brought into contact with the inspection object (2203).
- the direction indicated by the arrow is the slip direction.
- FIG. 22 (b) shows the arrangement when the first probe part and the tips (2206, 2207) of the second probe part are on one axis with respect to the sliding direction of the probe.
- the Kelvin probe of this embodiment can effectively utilize the area to be inspected by arranging the two measuring elements obliquely with respect to the sliding direction. Therefore, it is suitable for the measurement of miniaturized elements.
- Embodiment 10 Concept>
- the present embodiment relates to an inspection apparatus having the Kelvin probe of Embodiments 5 to 9 and an operation method thereof.
- FIG. 23 shows an overview of the inspection apparatus of this embodiment.
- the inspection apparatus according to the present embodiment includes an “inspection mounting table” (2301), a “Kelvin probe holding unit” (2302), and a “measurement unit” (2303).
- the “inspection target mounting table” (2301) mounts the inspection target. On the inspection table (2301) There may be more than one test object to be placed. Moreover, since the inspection object mounting table (2301) is brought into contact with the Kelvin probe, it may be movable up and down.
- the “Kelvin probe holding part” (2302) holds the Kelvin probe according to any one of Embodiments 5 to 9!
- the “measurement part” (2303) includes the first measurement part and the second measurement part described in the fifth to ninth embodiments.
- the inspection apparatus may be provided with a camera for observing whether or not the probe (2303) has contacted the inspection object!
- FIG. 24 shows an example of a state in which the Kelvin probe holding unit brings the measuring part into contact with the inspection object.
- the Kelvin probe holding part lowers the tip of the measuring element part (2402) having an elastic structure substantially perpendicular to the inspection target mounting plane of the inspection target mounting table.
- the reason for descending substantially vertically is as follows.
- the camera for aligning the Kelvin probe is often installed directly above the inspection target (2403). If the Kelvin probe of the camera force gauge is used, it is easy to see whether the tip of the gauge is directly above the object to be inspected. Therefore, if the tip of the probe is installed directly above the object to be inspected, the probe tip is brought into vertical contact with the object to be inspected, so that the positioning of the Kelvin probe tip can be easily controlled. It becomes.
- FIG. 25 shows another example of the state in which the Kelvin probe holding unit brings the probe portion into contact with the inspection object.
- the Kelvin probe holding unit has a measuring part (2501) having no elastic structure at the tip of a measuring part (2502) having an elastic structure with respect to the inspection target mounting plane of the inspection target mounting table. Observe the mounting plane force of the inspection side on the) side and move it down substantially vertically while maintaining an angle ( ⁇ ) of less than 90 degrees.
- ⁇ angle
- FIG. 26 shows an example of the operation method of the inspection apparatus of the present embodiment.
- the shank side is the handle side of the Kelvin probe, which is the right side in Fig. 26.
- the second probe (2604) contacts the object to be inspected (2603), and then rotated around the rotation axis (2604), The force that forces the first probe part (2601) and the second probe part (2602) to the shank side is covered.
- the method for measuring the force applied to the shank side is not limited to the method shown in FIG.
- the Kelvin probe may be lowered by rotating around the rotation shaft (2604) before the second probe portion (2602) contacts the object to be inspected.
- FIG. 1 is a conceptual diagram when a semiconductor is inspected by the Kelvin probe of the first embodiment.
- FIG. 2 is a schematic diagram when the Kelvin probe of Embodiment 1 is brought into contact with the connection pad of the object to be measured.
- FIG. 3 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the first embodiment.
- FIG. 4 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the first embodiment.
- FIG. 5 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a second embodiment.
- FIG. 6 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the second embodiment.
- FIG. 7 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
- FIG. 8 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
- FIG. 9 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
- FIG. 10 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the third embodiment.
- FIG. 11 is a diagram illustrating an example of a Kelvin probe according to the first embodiment.
- FIG. 14 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a fifth embodiment.
- FIG. 15 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a sixth embodiment.
- FIG. 16 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the seventh embodiment.
- FIG. 18 is a diagram illustrating an example of a Kelvin probe according to an eighth embodiment.
- FIG. 19 is a diagram illustrating an example of a tip portion of a Kelvin probe according to an eighth embodiment.
- FIG. 20 shows an example of a Kelvin probe of Embodiment 8.
- FIG. 21 is a diagram illustrating an example of a tip portion of a Kelvin probe according to an eighth embodiment.
- ⁇ 22 A diagram showing a state in which the Kelvin probe of Embodiment 9 is in contact with the inspection object.
- ⁇ 23] A diagram showing an example of the inspection apparatus of the tenth embodiment.
- FIG. 24 is a diagram illustrating an example of an inspection apparatus according to a tenth embodiment.
- FIG. 26 is a diagram illustrating an example of an operation method of the inspection apparatus according to the tenth embodiment.
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Abstract
Description
明 細 書 Specification
ケノレビンプローブ Kenolevin probe
技術分野 Technical field
[0001] 発光ダイオード (LED) ·半導体レーザー(LD)の電気的検査および発光検査などを 行うためのケルビンプローブ及びその製造方法に関する。 [0001] Light-emitting diode (LED) · relates to a Kelvin probe for electrical inspection and light-emission inspection of a semiconductor laser (LD) and a method for manufacturing the same.
背景技術 Background art
[0002] 半導体ウェハや電子部品の電気的検査、または発光ダイオードの発光検査におい ては、被測定物の接続パッドにプローブを押し付けることにより電気的接続を行って いる。これらの検査においては、 2本の測定子を 1対として用いることで測定精度を向 上させることのできるケルビンプローブも用いられて 、る。電気的検査及び発光検査 にお 、て問題となるのは、プローブと被測定物の接続パッドとの接触部に発生する接 触抵抗である。接触抵抗の原因となるものとして、異種金属の接触による接触電位差 、被測定物の接続パッド表面に付着した酸ィ匕膜や微小な凹凸部による抵抗などがあ る。接続パッドとして通常用いられて 、る材質はアルミニウム (A1)、銅 (Cu)、金 (Au) などである。しかし、アルミニウム、銅は酸化されやすぐ酸化されると強固な酸化膜( A1 0、 CuO、 Cu 0)が形成される。また金の場合、表面に酸化物や窒化物などの変 In electrical inspection of semiconductor wafers and electronic components, or light emission inspection of light-emitting diodes, electrical connection is performed by pressing a probe against a connection pad of an object to be measured. In these examinations, Kelvin probes that can improve the measurement accuracy by using two measuring elements as a pair are also used. In electrical inspection and light emission inspection, the problem is contact resistance generated at the contact portion between the probe and the connection pad of the object to be measured. Causes of contact resistance include contact potential difference due to contact of dissimilar metals, resistance due to oxide film attached to the surface of the connection pad of the object to be measured, and minute uneven portions. Commonly used as connection pads include aluminum (A1), copper (Cu), and gold (Au). However, when aluminum and copper are oxidized and soon oxidized, a strong oxide film (A10, CuO, Cu0) is formed. In the case of gold, the surface is free of oxides and nitrides.
2 3 2 2 3 2
質層が形成される。したがってプローブと被測定物の接続パッドとの電気的接触を良 好にするためには、前記酸ィ匕膜または変質層を除去してプローブを被測定物の接続 パッドのアルミニウムと接触させなければならない。 A quality layer is formed. Therefore, in order to improve the electrical contact between the probe and the connection pad of the object to be measured, it is necessary to remove the oxide film or the deteriorated layer so that the probe does not contact the aluminum of the connection pad of the object to be measured. Don't be.
[0003] この問題を解決するため、これまでにさまざまな方法が考えられている。特許文献 1 では、プローブを斜めから被測定物の接続パッドに接触させ、表面の酸化膜を除去 しゃすくする方法を提案している。また特許文献 2では、プローブ先端に酸化膜が付 着することを防止するため、プローブ先端をプローブ本体の材質とは異なる材質とす ることを提案している。また特許文献 3では、プローブ先端が半導体光触媒を有する ことで酸ィ匕膜を還元させる方法を提案して 、る。 [0003] In order to solve this problem, various methods have been considered so far. Patent Document 1 proposes a method in which the probe is brought into contact with the connection pad of the object to be measured obliquely to remove the oxide film on the surface. Further, Patent Document 2 proposes that the probe tip be made of a material different from the material of the probe body in order to prevent an oxide film from adhering to the probe tip. Patent Document 3 proposes a method of reducing the oxide film by having a semiconductor photocatalyst at the probe tip.
[0004] また被測定物の接続パッドとプローブとの接触抵抗による誤差を防止する方法とし て四端子法 (ケルビン法)が知られている。四端子法によれば、電流印加端子と電圧 測定端子とを分離することにより、接触抵抗の影響をとり除き、被測定物である接続 パッドに酸ィ匕膜があっても高精度な測定が可能となる。四端子法では 2本の測定子を 1対として使 、、 1対となった測定子をケルビンプローブと!/、う。 [0004] Further, a four-terminal method (Kelvin method) is known as a method for preventing an error caused by contact resistance between a connection pad of a device under test and a probe. According to the four-terminal method, the current application terminal and voltage Separating the measurement terminal eliminates the influence of contact resistance, and enables high-precision measurement even if there is an oxide film on the connection pad that is the object to be measured. The four probe method uses two probe as a pair, and the pair of probe is a Kelvin probe!
特許文献 1:特開平 11 148947 Patent Document 1: JP-A-11 148947
特許文献 2:特開 2004 - 226204 Patent Document 2: JP 2004-226204 A
特許文献 3:特開 2003 - 207522 Patent Document 3: JP 2003-207522
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0005] 従来のプローブの先端形状は平坦あるいは球状になっているため、被測定物の接 続パッド表面の酸ィ匕膜が除去できず、接触抵抗が大きくなつてしまうため、正確な電 気的特性または光学的特性の測定が行えな力つた。また特許文献 2及び 3の方法で は、プローブ先端に別の物質を付着させる必要があり、精密な加工が困難であった。 素子の微細化に伴いプローブも微細加工する必要があり、このような微細加工に適し 、かつ表面酸ィヒ膜を除去することが可能なプローブが必要とされる。 [0005] Since the tip shape of the conventional probe is flat or spherical, the oxide film on the surface of the connection pad of the object to be measured cannot be removed, and the contact resistance increases. The ability to measure optical or optical properties. In the methods of Patent Documents 2 and 3, it is necessary to attach another substance to the probe tip, and precise processing is difficult. As the element becomes finer, the probe also needs to be finely processed, and a probe suitable for such fine processing and capable of removing the surface acid film is required.
[0006] 高精度な測定が可能となる四端子法による検査でも、微細化した素子の被測定物 である接続パッドに 2本の測定子を接続させることは困難であるという問題があった。 現在素子の微細化に伴 、検査用の被測定物である接続パッドも微細化しており、接 続パッドの幅は通常 30〜100 mのものが使用されている。このような微細な接続パッ ドに 2本の測定子を接続させると、導通により正確な測定が行えない場合がある。また 特許文献 4のように 2本の測定子とこれらを絶縁する絶縁材とを一体としたケルビンプ ローブによっても、微細加工が困難であり、微細化した接続パッドに接続することはで きなかった。 [0006] Even in the inspection by the four-terminal method that enables high-accuracy measurement, there is a problem that it is difficult to connect two measuring elements to a connection pad that is an object to be measured of a miniaturized element. At present, with the miniaturization of devices, the connection pads, which are objects to be inspected, are also becoming finer, and the width of the connection pads is usually 30 to 100 m. If two measuring elements are connected to such a fine connection pad, accurate measurement may not be possible due to conduction. Moreover, even with a Kelvin probe in which two measuring elements and an insulating material that insulates them are integrated as in Patent Document 4, microfabrication is difficult and cannot be connected to a miniaturized connection pad. .
[0007] また、測定子をプローブ装置に設置する場合に、測定子の横断面が例えば円形の 場合、正しい方向に設置することは困難である。 [0007] When the probe is installed in the probe device, if the probe has a circular cross section, it is difficult to install the probe in the correct direction.
[0008] また、従来のケルビンプローブは、 2本の測定子の先端を同じ高さに設定することが 困難であるため、 2本の測定子のうち片方は接続パッドに接触するものの、もう片方 は接続パッドに十分に接触しないため、測定精度の誤差を生じる原因となっていた。 特許文献 4:特開昭 63 - 175771 課題を解決するための手段 [0008] In addition, since it is difficult for the conventional Kelvin probe to set the tips of the two measuring elements to the same height, one of the two measuring elements contacts the connection pad, but the other Does not fully contact the connection pads, causing a measurement accuracy error. Patent Document 4: JP-A 63-175771 Means for solving the problem
[0009] 上記課題を解決するため、本発明者らは、以下のケルビンプローブ、ケルビンプロ ーブを有する測定装置、ケルビンプローブの製造方法を提供する。 [0009] In order to solve the above problems, the present inventors provide the following Kelvin probe, a measuring device having a Kelvin probe, and a method for producing the Kelvin probe.
[0010] 第一の発明は、第一測定子部と、第一測定子部と絶縁層で絶縁される第二測定子 部と、力 なるケルビンプローブであって、第一測定子部又は第二測定子部のいず れか一方のみが橈むことで検査対象に対して弾性接触可能な弾性構造を有するケ ルビンプローブを提供する。第二の発明は、前記絶縁層は、第一測定子部と第二測 定子部とを部分的に固着するとともに、測定子の先端部近傍は非固着とすることで前 記弾性構造となす第一の発明に記載のケルビンプローブを提供する。第三の発明は[0010] A first invention is a first stylus part, a second stylus part insulated from the first stylus part by an insulating layer, and a powerful Kelvin probe. Provided is a Kelvin probe having an elastic structure that can be elastically contacted with an object to be inspected when only one of the two probe parts is pinched. According to a second aspect of the present invention, the insulating layer partially secures the first probe part and the second probe part, and the vicinity of the tip part of the probe is not fixed, thereby forming the elastic structure. A Kelvin probe according to the first invention is provided. The third invention is
、 V、ずれかの測定子部の先端近傍が検査対象に非接触時は両測定子部の先端近 傍は接触状態にあり、いずれかの測定子部の先端近傍が検査対象に接触する際の 接触圧によってその接触した測定子部が橈み、前記接触状態から非接触状態にな る第一又は第二の発明に記載のケルビンプローブを提供する。第四の発明は、第一 測定子部は、弾性が第二測定子部に比較して小さい構造の印加針であり、第二測 定子部は、弾性が第一測定子部に比較して大きい構造の検出針である第一力 第 三の発明いずれか一に記載のケルビンプローブを提供する。第五の発明は、第一測 定子部は、タングステン系バルタ材料力 なり、第二測定子部は、ステンレス系針金 状材料力もなる第一力 第四の発明のいずれか一に記載のケルビンプローブを提供 する。第六の発明は、検査対象に向力つて第一測定子部と第二測定子部の突出量 が異なる第一力も第五の発明のいずれか一に記載のケルビンプローブを提供する。 第七の発明は、検査対象に向力つて第一測定子部よりも第二測定子部がより突出し ている第六の発明に記載のケルビンプローブを提供する。第八の発明は、検査対象 に対して押し付けて行くことで第一測定子部と、第二測定子部の両者がともに検査対 象に接触する際に第二測定子部を介して検査対象に加えられる荷重が 10g重以下 となるような弾性を第二測定子部が有する第七の発明に記載のケルビンプローブを 提供する。第九の発明は、第二測定子部の先端線は第一測定子部の中心線に対し て鋭角である第一から第八の発明のいずれか一に記載のケルビンプローブを提供 する。第十の発明は、第二測定子部の前記鋭角となる先端線は、第二測定子部に 複数の屈曲節を設けることで形成されて 、る第九の発明に記載のケルビンプローブ を提供する。第十一の発明は、第一測定子部と、第二測定子部の先端は、プローブ のすベり方向に対して一軸上にな 、第一から第十の発明の 、ずれか一に記載のケ ルビンプローブを提供する。 When the vicinity of the tip of either of the probe parts is not in contact with the test object, the vicinity of the tip of both probe parts is in contact, and when the vicinity of the tip of either probe part is in contact with the test object The Kelvin probe according to the first or second invention is provided in which the contacting probe part stagnate by the contact pressure, and the contact state is changed to the non-contact state. According to a fourth aspect of the present invention, the first probe part is an application needle having a smaller elasticity than the second probe part, and the second probe part is elastic compared to the first probe part. A first force which is a detection needle having a large structure. A Kelvin probe according to any one of the third invention is provided. The fifth invention is the Kelvin probe according to any one of the fourth invention, wherein the first probe part is a tungsten-based barta material force and the second probe part is a stainless steel wire-like material force. I will provide a. The sixth invention provides the Kelvin probe according to any one of the fifth invention, in which the first force in which the protruding amount of the first probe part and the second probe part differs depending on the object to be inspected. A seventh invention provides the Kelvin probe according to the sixth invention, wherein the second probe part protrudes more than the first probe part toward the test object. According to the eighth aspect of the invention, when both the first probe part and the second probe part come into contact with the inspection object by pressing against the object to be inspected, the inspection object is passed through the second probe part. The Kelvin probe according to the seventh invention, wherein the second probe portion has elasticity such that the load applied to the load is 10 g weight or less. A ninth invention provides the Kelvin probe according to any one of the first to eighth inventions, wherein the tip line of the second probe part is an acute angle with respect to the center line of the first probe part. In a tenth aspect of the present invention, the tip line having the acute angle of the second probe portion is connected to the second probe portion. The Kelvin probe according to the ninth invention is provided by providing a plurality of bent nodes. In the eleventh invention, the first probe part and the tip of the second probe part are on one axis with respect to the sliding direction of the probe. Provide the described Kelvin probe.
[0011] 第十二の発明は、第一から第十一の発明のいずれか一に記載のケルビンプローブ を有する検査装置を提供する。第十三の発明は、検査対象を載置する検査対象載 置台と、第一力 第十一の発明のいずれか一に記載のケルビンプローブを保持する ケルビンプローブ保持部と、を有し、ケルビンプローブ保持部は、検査対象載置台の 検査対象載置平面に対して弾性構造を有する測定子部の先端を略垂直に降下させ る第十一の発明に記載の検査装置を提供する。第十四の発明は、検査対象を載置 する検査対象載置台と、第一から第十一の発明のいずれか一に記載のケルビンプロ ーブを保持するケルビンプローブ保持部と、を有し、ケルビンプローブ保持部は、検 查対象載置台の検査対象載置平面に対して弾性構造を有する測定子部の先端を 弾性構造を有さない測定子部側の検査対象載置平面からみて 90度未満の角度を 保ちながら略垂直降下させる第十の発明に記載の検査装置を提供する。 A twelfth invention provides an inspection apparatus having the Kelvin probe according to any one of the first to eleventh inventions. A thirteenth invention has a test object mounting table for mounting a test object, and a Kelvin probe holding part for holding the Kelvin probe according to any one of the first power eleventh invention, The probe holding section provides the inspection apparatus according to the eleventh aspect, wherein the probe holding section lowers the tip of the measuring element section having an elastic structure substantially perpendicular to the inspection target mounting plane of the inspection target mounting base. A fourteenth aspect of the invention includes an inspection target mounting table for mounting an inspection target, and a Kelvin probe holding unit for holding the Kelvin probe according to any one of the first to eleventh aspects of the invention. The Kelvin probe holder is configured such that the tip of the measuring part having an elastic structure with respect to the inspection target mounting plane of the inspection target mounting table is viewed from the inspection target mounting plane on the measuring part side having no elastic structure. An inspection apparatus according to the tenth aspect of the present invention is provided that descends substantially vertically while maintaining an angle of less than degrees.
[0012] 第十五の発明は、第六力 第十一の発明のいずれか一に記載のケルビンプローブ を有する検査装置の動作方法であって、遅くとも第一測定子部又は第二測定子部の いずれか一が検査対象に接触した後はケルビンプローブに対してシャンク側に向か う力を加えるシャンク側力印加ステップを有する検査装置の動作方法を提供する。 [0012] A fifteenth aspect of the invention is an operation method of an inspection apparatus having the Kelvin probe according to any one of the sixth force of the eleventh aspect of the invention, and at the latest, the first probe part or the second probe part Provided is a method of operating an inspection apparatus having a shank side force application step of applying a force toward the shank side to the Kelvin probe after any one of the above contacts an inspection object.
[0013] 第十六の発明は、第一の基板を準備する第一基板準備工程と、前記第一基板準 備工程にて準備された第一基板面上にフィルム状絶縁膜を配置するフィルム状絶縁 膜配置工程と、前記フィルム状絶縁膜配置工程にて配置されたフィルム状絶縁膜を 挟むように第二の基板を配置する第二基板配置工程と、前記第二基板配置工程に て前記フィルム状絶縁膜を狭持して配置された前記第一基板と、前記第二基板とを 加熱しながら押圧して、フィルム状絶縁膜により一体ィ匕してブロックとするブロック作 成工程と、前記ブロックをワイヤ放電加工により、前記第一基板と、第二基板とが絶 縁された状態でそれぞれ測定子となるよう加工する外形加工工程と、を有するケルビ ンプローブの製造方法を提供する。第十七の発明は、前記フィルム状絶縁膜の厚さ は、 5ミクロン以上、 50ミクロン以下である第十六の発明に記載のケルビンプローブの 製造方法を提供する。第十八の発明は、前記外形加工工程にて切り出す切出幅は 、 5ミクロン以上 2ミリ以下の範囲である第十六又は第十七の発明に記載のケルビン プローブの製造方法を提供する。 [0013] The sixteenth invention includes a first substrate preparing step of preparing a first substrate, and a film in which a film-like insulating film is disposed on the first substrate surface prepared in the first substrate preparing step The step of arranging the second substrate so as to sandwich the film-like insulating film arranged in the film-like insulating film arranging step, and the step of arranging the second substrate. A block forming step in which the first substrate and the second substrate arranged with the film-like insulating film sandwiched between them are pressed while being heated to form a block integrally with the film-like insulating film; There is provided a method for manufacturing a Kelvin probe, comprising: an outer shape processing step for processing the block by wire electric discharge machining so that the first substrate and the second substrate are isolated from each other to form a measuring element. The seventeenth invention is the thickness of the film-like insulating film Provides a method for producing a Kelvin probe according to the sixteenth aspect of the invention, which is 5 microns or more and 50 microns or less. The eighteenth invention provides the method for producing a Kelvin probe according to the sixteenth or seventeenth invention, wherein a cut-out width cut out in the outer shape processing step is in a range of 5 microns to 2 mm.
第十九の発明は、多角形の横断面を有するケルビンプローブを提供する。第二十 の発明は、前記多角形は、正多角形でない多角形である第十九の発明に記載のケ ルビンプローブを提供する。第二十一の発明は、前記多角形は、多角形を構成する 辺の数が奇数である奇数辺多角形である第十九または第二十の発明に記載のケル ビンプローブを提供する。第二十二の発明は、前記多角形の横断面は、シャンク部 分にある第十九力 第二十一の発明のいずれか一に記載のケルビンプローブを提 供する。第二十三の発明は、前記多角形の横断面は、先端部にあり、この先端部を 、被測定物の接続パッドと接触させる際には、前記多角形の頂点のいずれか一から 前記接続パッド接触面に接触するように構成された第十九から第二十一の発明のい ずれか一に記載のケルビンプローブを提供する。第二十四の発明は、前記多角形の 横断面は、先端部にあり、この先端部を、被測定物の接続パッドと接触させる際には 、前記多角形の頂点力もは前記接続パッド接触面に接触しないように構成された第 十九から第二十一の発明のいずれか一に記載のケルビンプローブを提供する。第二 十五の発明は、前記多角形の横断面は、ケルビンプローブの先端部になぐこの先 端部の被測定物の接続パッドと接触させる面は、曲面で構成されている第十九から 第二十一の発明のいずれか一に記載のケルビンプローブを提供する。第二十六の 発明は、前記多角形のうちの少なくとも 1辺を直線に代えて曲線とした第十九力 第 二十五の発明のいずれか一に記載のケルビンプローブを提供する。第二十七の発 明は、第一測定子部及び第二測定子部と、前記第一測定子部と、第二測定子部と、 によって挟みこまれるように配置され、前記測定子部を相互に絶縁するとともに、第 一測定子部と第二測定子部とを一体化するための絶縁層部と、からなる第十九から 第二十六の発明のいずれか一に記載のケルビンプローブを提供する。第二十八の 発明は、第十六力 第十八の発明のいずれか一に記載のケルビンプローブの製造 方法にて製造される第二十七の発明に記載のケルビンプローブを提供する。第二十 九の発明は、先端部には、前記絶縁層部が配されていない第二十七又は第二十八 の発明に記載のケルビンプローブを提供する。第三十の発明は、先端部が屈曲して いる第十九力も第二十九の発明のいずれか一に記載のケルビンプローブを提供す る。第三十一の発明は、前記屈曲は、測定子対のいずれか一方の側になされている 第三十の発明に記載のケルビンプローブを提供する。 The nineteenth invention provides a Kelvin probe having a polygonal cross section. A twenty-second invention provides the Kelvin probe according to the nineteenth invention, wherein the polygon is a polygon that is not a regular polygon. A twenty-first invention provides the Kelvin probe according to the nineteenth or twenty-first invention, wherein the polygon is an odd-sided polygon having an odd number of sides constituting the polygon. A twenty-second invention provides the Kelvin probe according to any one of the nineteenth force and the twenty-first invention, wherein the polygonal cross section is in a shank portion. In a twenty-third aspect of the invention, the polygonal cross section is at the tip, and when the tip is brought into contact with the connection pad of the object to be measured, the polygonal cross section is selected from any one of the vertices of the polygon. A Kelvin probe according to any one of the nineteenth to twenty-first inventions configured to contact a connection pad contact surface is provided. In the twenty-fourth aspect of the invention, the polygonal cross section is at the tip, and when the tip is brought into contact with the connection pad of the object to be measured, the apex force of the polygon is also in contact with the connection pad. A Kelvin probe according to any one of the nineteenth to twenty-first aspects of the invention configured to prevent contact with a surface is provided. According to a twenty-fifth aspect of the invention, from the nineteenth to the nineteenth aspect, the polygonal cross section has a curved surface as a surface to be contacted with the connection pad of the object to be measured at the tip of the Kelvin probe. A Kelvin probe according to any one of the twenty-first inventions is provided. A twenty-sixth aspect of the invention provides the Kelvin probe according to any one of the twenty-fifth aspect of the invention, wherein at least one side of the polygon is replaced with a straight line. The twenty-seventh aspect of the invention is arranged so as to be sandwiched between the first probe part and the second probe part, the first probe part, and the second probe part. And a Kelvin device according to any one of the nineteenth to twenty-sixth aspects, comprising: an insulating layer portion for integrating the first measuring portion and the second measuring portion. Provide a probe. A twenty-eighth aspect of the invention provides the Kelvin probe according to the twenty-seventh aspect of the invention, which is manufactured by the method for manufacturing a Kelvin probe according to any one of the sixteenth force and the eighteenth aspect of the invention. 20th A ninth invention provides the Kelvin probe according to the twenty-seventh or twenty-eighth invention, wherein the insulating layer portion is not arranged at the tip portion. A thirtieth aspect of the invention provides the Kelvin probe according to any one of the twenty-ninth aspect, wherein the nineteenth force having a bent tip portion. A thirty-first aspect of the invention provides the Kelvin probe according to the thirty-first aspect of the invention, wherein the bending is made on either side of the probe pair.
発明の効果 The invention's effect
[0015] 本発明のケルビンプローブにより、 2つの測定子が両方とも確実に接続パッドに接 触するため、素子の検査の精度を高めることができる。 [0015] With the Kelvin probe of the present invention, since both of the two measuring elements reliably contact the connection pad, it is possible to improve the accuracy of element inspection.
[0016] また、本発明のケルビンプローブの製造方法によりケルビンプローブ先端の微細加 ェを行うことができるため、本発明のケルビンプローブの製造方法により得られたケ ルビンプローブを用いることで微細素子の検査を行うことができる。また本発明のケル ビンプローブによれば、横断面が多角形となることで、被測定物の接続パッド表面の 酸ィ匕膜あるいは変質層を容易に除去することができる。そのため、ケルビンプローブ が被測定物の接続パッドのアルミニウム材質部と接触することができ、接触抵抗によ る測定誤差を軽減することができる。さらに、別の効果として、測定子をプローブ装置 に装着するときに、測定子の向き合わせを容易に行うことができる。 [0016] Further, since the Kelvin probe tip can be finely applied by the Kelvin probe manufacturing method of the present invention, the use of the Kelvin probe obtained by the Kelvin probe manufacturing method of the present invention makes it possible to obtain a microelement. Inspection can be performed. Further, according to the Kelvin probe of the present invention, since the cross section is polygonal, the oxide film or the altered layer on the connection pad surface of the object to be measured can be easily removed. Therefore, the Kelvin probe can come into contact with the aluminum material portion of the connection pad of the object to be measured, and measurement errors due to contact resistance can be reduced. As another effect, the orientation of the probe can be easily performed when the probe is attached to the probe device.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0017] 以下本発明について詳細に説明する。実施形態 1は主に請求項 16から 18につい て説明する。実施形態 2は主に請求項 19から 26について説明する。実施形態 3は主 に請求項 27から 29について説明する。実施形態 4は主に請求項 30及び 31につい て説明する。実施形態 5は主に請求項 1、 2、 6、 7及び 8について説明する。実施形 態 6は主に請求項 3について説明する。実施形態 7は主に請求項 4及び 5について 説明する。実施形態 8は主に請求項 9及び 10について説明する。実施形態 9は主に 請求項 11について説明する。実施形態 10は主に請求項 12から 15について説明す る。 Hereinafter, the present invention will be described in detail. The first embodiment will mainly describe claims 16 to 18. The second embodiment will mainly describe claims 19 to 26. The third embodiment will mainly describe claims 27 to 29. The fourth embodiment will mainly describe claims 30 and 31. The fifth embodiment will mainly describe claims 1, 2, 6, 7, and 8. Embodiment 6 will mainly describe claim 3. The seventh embodiment will mainly describe claims 4 and 5. The eighth embodiment will mainly describe claims 9 and 10. The ninth embodiment will mainly describe claim 11. The tenth embodiment will mainly describe claims 12 to 15.
[0018] く実施形態 1 :構成〉 [0018] <Embodiment 1: Configuration>
く実施形態 1〉 Embodiment 1>
く実施形態 1 :概念〉 本実施形態は 1対となる測定子の間に絶縁層を配することで、 1対の測定子を電気 的に絶縁することのできるケルビンプローブの製造方法に関する。図 13に本実施形 態のケルビンプローブの製造方法の概念図を示した。まず第一基板と第二基板との 間にフィルム状絶縁膜を挟みこんで、ローラーを用いて加熱しながら押圧する( 。 次に放電カ卩ェによりブロックを切断する (b)。次に切断されたブロックをさらに微細加 ェしてケルビンプローブとする (c)。 Embodiment 1: Concept> The present embodiment relates to a method of manufacturing a Kelvin probe that can electrically insulate a pair of measuring elements by disposing an insulating layer between the pair of measuring elements. Fig. 13 shows a conceptual diagram of the manufacturing method of the Kelvin probe of this embodiment. First, a film-like insulating film is sandwiched between the first substrate and the second substrate and pressed while being heated using a roller (Next, the block is cut by a discharge cage (b). The resulting block is further finely added to form a Kelvin probe (c).
[0019] く実施形態 1 :製造工程〉 <Embodiment 1: Manufacturing Process>
図 12は本実施形態のケルビンプローブの製造工程の一例を示したものである。以 下本実施形態の製造工程を図 12を用いて各工程ごとに説明する。 FIG. 12 shows an example of the manufacturing process of the Kelvin probe of this embodiment. Hereinafter, the manufacturing process of this embodiment will be described for each process with reference to FIG.
[0020] 第一基板準備工程 (S1201)は第一の基板を準備する工程である。第一の基板の材 質は主に導電性の材料により構成される。そしてその導電性材料は、酸化膜を除去 するためにできるだけ硬い材質が好ましい。具体的にはタングステン、タングステン合 金、タングステンカーバイド、ベリリウム銅などが導電性材料として好ましい。ケルビン プローブは一種類の材質のみカゝら構成されるものでなぐ複数種類の材質により構成 されていても良い。 [0020] The first substrate preparation step (S1201) is a step of preparing the first substrate. The material of the first substrate is mainly composed of a conductive material. The conductive material is preferably as hard as possible in order to remove the oxide film. Specifically, tungsten, tungsten alloy, tungsten carbide, beryllium copper, or the like is preferable as the conductive material. The Kelvin probe may be composed of a plurality of types of materials other than a single type of material.
[0021] フィルム状絶縁膜配置工程 (S1202)は、前記第一基板準備工程にて準備された第 一基板面上にフィルム状絶縁膜を配置する工程である。フィルム状絶縁膜はケルビ ンプローブを構成する絶縁層の元の材料となるため、材質は少なくとも最終的に絶縁 層となりうるものである。ただし、この配置工程作業時に絶縁性を有していることは必 ずしも必要でなく、後の工程で加熱などのプロセスを介して絶縁性を有するようにな れば十分である。この配置工程は第一基板上にフィルム状絶縁膜を載置して、ロー ラーにより加圧することなどで可能である。もちろん、ローラーを用いないで単に載置 しておくだけでもよい。フィルム状絶縁膜の厚さは、 5ミクロン以上、 50ミクロン以下で あることが好ましい。さらに好ましくは、 5ミクロン以上 25ミクロン以下である。フィルム 状絶縁膜が 5ミクロン以下では、フィルム状絶縁膜の商品特性力も精度よくギャップを 形成することができず 50ミクロン以上ではケルビンプローブが大きくなり、微細素子の 検査を行うことができな 、ためである。ここで微細素子とは例えば発光ダイオード素子 などが該当する。ただし、このフィルム状絶縁膜配置工程におけるフィルム状絶縁膜 の厚みが直ちに完成後のケルビンプローブの絶縁層の厚みを意味するものでない。 つまり、完成に至る工程において、フィルム状絶縁膜の厚みが加熱硬化により減少 するのが通常である。従って、後の工程でどの程度厚みが減少するかを予め考慮に 入れた上で、この工程におけるフィルム状絶縁膜の厚みを決める必要がある。また、 このフィルム状絶縁膜を利用する重要な理由は、広い面積にわたって均一な厚みを 実現できるからである。もしも、均一な厚みを実現できないとすれば所定の絶縁層の 厚みであるギャップ規格を満たす製品の歩留まりが悪ィ匕する結果となる。また、均一 なギャップを実現できなければ、二つの測定子を一体化するための絶縁層の機械的 強度も不十分となる。 The film-like insulating film disposing step (S1202) is a step of disposing a film-like insulating film on the first substrate surface prepared in the first substrate preparing step. Since the film-like insulating film is the original material of the insulating layer constituting the Kelvin probe, the material can at least ultimately become the insulating layer. However, it is not always necessary to have an insulating property during the placement process work, and it is sufficient if the insulating property is obtained through a process such as heating in a later step. This arranging step can be performed by placing a film-like insulating film on the first substrate and pressurizing with a roller. Of course, you can simply place it without using a roller. The thickness of the film-like insulating film is preferably 5 microns or more and 50 microns or less. More preferably, it is 5 microns or more and 25 microns or less. If the film insulation film is 5 microns or less, the product characteristic strength of the film insulation film cannot accurately form a gap. If the film insulation film is 50 microns or more, the Kelvin probe becomes large and the microelements cannot be inspected. It is. Here, the fine element corresponds to a light emitting diode element, for example. However, the film insulation film in this film insulation film arrangement process Does not mean the thickness of the insulating layer of the Kelvin probe immediately after completion. That is, in the process leading to completion, the thickness of the film-like insulating film is usually reduced by heat curing. Therefore, it is necessary to determine the thickness of the film-like insulating film in this process after taking into consideration in advance how much the thickness will decrease in the subsequent process. An important reason for using this film-like insulating film is that a uniform thickness can be realized over a wide area. If a uniform thickness cannot be realized, the yield of products that satisfy the gap standard, which is the thickness of a predetermined insulating layer, will be deteriorated. Moreover, if a uniform gap cannot be realized, the mechanical strength of the insulating layer for integrating the two measuring elements will be insufficient.
[0022] ここでフィルム状絶縁膜とは、光によって固まる榭脂(レジスト層)がポリエチレンとポ リエステルのフィルムによってサンドウイツチされて 、るフィルムを 、うが、本件発明に おいては光との反応は利用しない。例えば東京応化工業株式会社や、デュポン社の 製品が知られている。なお、 5ミクロン以下の厚みを精度よく実現しょうとすればフィル ム状絶縁膜よりもむしろ、スピン塗布などの技術を利用するほうが効果的である。フィ ルム状絶縁膜の商品は、薄くなつても厚みのェ差の絶対値が変わらないために、厚 みばらつき率が大きくなるからである。ただし、スピン塗布を利用するとすれば、基板 端面上に盛り上がりが形成されるためにこの盛り上がりによるギャップ精度の劣化の 問題を解決しなければならな ヽ。 [0022] Here, the film-like insulating film is a film in which a resin (resist layer) hardened by light is sandwiched by a polyethylene and polyester film, but in the present invention, it reacts with light. Is not used. For example, products from Tokyo Ohka Kogyo Co., Ltd. and DuPont are known. In order to achieve a thickness of 5 microns or less with high accuracy, it is more effective to use a technique such as spin coating rather than a film-like insulating film. This is because the products with film-like insulating films have a large thickness variation rate because the absolute value of the difference in thickness does not change even if they are thin. However, if spin coating is used, a bulge is formed on the end face of the substrate, so the problem of gap accuracy degradation due to this bulge must be solved.
[0023] 第二基板配置工程 (S1203)は、前記フィルム状絶縁膜配置工程にて配置されたフ イルム状絶縁膜を挟むように第二の基板を配置する工程である。第二の基板の材質 は第一の基板の材質と同様である。 [0023] The second substrate disposing step (S1203) is a step of disposing the second substrate so as to sandwich the film insulating film disposed in the film insulating film disposing step. The material of the second substrate is the same as the material of the first substrate.
[0024] ブロック作成工程 (S1204)は、前記第二基板配置工程にて前記フィルム状絶縁膜 を狭持して配置された前記第一基板と、前記第二基板とを加熱しながら押圧して、フ イルム状絶縁膜により一体ィ匕してブロックとする工程である。押圧は、図 13(a)のように 第一基板と、第二基板間にフィルム状絶縁膜を配置し、ローラーで第一基板と第二 基板とを密着方向に加圧することによって一体化する。ローラーとしては、ドライフィ ルムラミネート用の装置などを利用する。この工程により、第一の基板とフィルム状絶 縁膜、第二の基板とフィルム状絶縁膜とが強く固着することによりブロックとして一体 化される。また別の押圧方法として、プレス機により圧縮して一体化する方法、 CVD で絶縁膜層を蒸着する方法、冶具に第一基板、フィルム状絶縁膜、第二基板を配置 して加熱しながらねじで圧縮する方法もある。 [0024] In the block creation step (S1204), the first substrate placed with the film-like insulating film sandwiched in the second substrate placement step and the second substrate are pressed while heating. This is a process of forming a block integrally with a film-like insulating film. As shown in FIG. 13 (a), the pressing is performed by placing a film-like insulating film between the first substrate and the second substrate, and pressing the first substrate and the second substrate in the adhesion direction with a roller. . As the roller, a dry film laminator is used. Through this process, the first substrate and the film-like insulating film, and the second substrate and the film-like insulating film are firmly fixed together as a block. It becomes. As another pressing method, a method of compressing and integrating with a press machine, a method of vapor-depositing an insulating film layer by CVD, a first substrate, a film-like insulating film, and a second substrate placed on a jig and heating and screwing There is also a method of compressing with.
[0025] 外形加工工程 (S1205)は、前記ブロックをワイヤ放電加工により、前記第一基板と、 第二基板とが絶縁された状態でそれぞれ測定子となるよう加工する工程である。ワイ ャ放電力卩ェとは、金属ワイヤとカ卩ェ目的物とを電極としてそれらの間の放電によりカロ ェを行う方法である。ワイヤ放電力卩ェを用いれば、タングステンのような硬い金属でも 複雑な形状に加工することができる。ワイヤ放電加工は導電性のある材料であれば 加工できる力 絶縁体の加工はできない。したがって前記フィルム状絶縁膜は加工で きないようにも思えるが、前記ブロックは主に導電性材料により構成されており、フィ ルム状絶縁膜の厚さは十分薄いため、導電性材料とともに加工することができる。外 形カ卩ェ工程にて切り出す切出幅は、 5ミクロン以上 2ミリ以下の範囲であることが好ま しい。切出幅とは切断されたブロックの切断面と垂直な方向の長さをいう。切出幅を 5 ミクロン以下とすることは技術的に困難で、切出幅が 2ミリ以上ではケルビンプローブ が大きくなり、微細素子の測定に適さないからである。ケルビンプローブは、一般的に 尖端を有する複雑な形状を有するので、切削刃のみを利用したり、研磨プロセスの みを利用することでは、所望形状を実現することが困難である。本件発明の重要なポ イントは、この外形カ卩ェ工程においてワイヤ放電力卩ェを利用する点であり、これによ つてはじめて複雑な形状を有するケルビンプローブを実現できた。 [0025] The outer shape processing step (S1205) is a step of processing the block by wire electric discharge machining so that each of the first substrate and the second substrate becomes a measuring element while being insulated. The wire discharge force is a method in which a metal wire and a target object are used as electrodes to perform calorie by discharging between them. If the wire discharge force is used, even a hard metal such as tungsten can be processed into a complicated shape. Wire electrical discharge machining can be processed with a conductive material. Insulators cannot be processed. Therefore, it seems that the film-like insulating film cannot be processed, but the block is mainly made of a conductive material, and the film-like insulating film is sufficiently thin so that it is processed together with the conductive material. be able to. It is preferable that the cutting width to be cut out in the outer casing process is in the range of 5 microns to 2 mm. The cut-out width means the length in the direction perpendicular to the cut surface of the cut block. This is because it is technically difficult to cut the cutting width to 5 microns or less, and if the cutting width is 2 mm or more, the Kelvin probe becomes large and is not suitable for the measurement of fine elements. Since the Kelvin probe generally has a complicated shape having a pointed tip, it is difficult to achieve a desired shape by using only a cutting blade or only a polishing process. An important point of the present invention is that the wire discharge force is used in this outer shape caching process, and this makes it possible to realize a Kelvin probe having a complicated shape for the first time.
[0026] く実施形態 1 :効果〉 [0026] <Embodiment 1: Effect>
本実施形態によれば、ケルビンプローブの微細加工を行うことができるため、微細 化した素子の測定に適したケルビンプローブを製造することができる。 According to this embodiment, since the Kelvin probe can be finely processed, a Kelvin probe suitable for measurement of a miniaturized element can be manufactured.
[0027] く実施形態 2〉 [0027] Embodiment 2>
く実施形態 2 :概念〉 Embodiment 2: Concept>
図 1は本実施形態のケルビンプローブを用いて半導体の検査を行う様子を表したも のである。ケルビンプローブは 2本の測定子が 1対として使われ、電流の入り口側及び 出口側にそれぞれ 1対ずっケルビンプローブを用いるため、合計で少なくとも 4つの 測定子を使用する。ケルビンプローブは固定されており、半導体の支持台を図 1の矢 印の方向に動かすことにより検査を行う。図 2には本実施形態のケルビンプローブを 用いて被測定物の接続パッド表面の酸ィ匕膜を除去する様子を表した。図 2で示す被 測定物の接続パッドはアルミニウム (0203)を母材としており、表面が酸化膜 (A1 0 ) FIG. 1 shows a state in which a semiconductor is inspected using the Kelvin probe of this embodiment. The Kelvin probe uses two gauges as a pair, and uses a pair of Kelvin probes on the current entrance and exit sides respectively, so use at least 4 gauges in total. The Kelvin probe is fixed, and the semiconductor support is Test by moving in the direction of the mark. FIG. 2 shows how the oxide film on the surface of the connection pad of the object to be measured is removed using the Kelvin probe of this embodiment. The connection pad of the DUT shown in Fig. 2 is made of aluminum (0203) as the base material, and the surface is an oxide film (A1 0)
2 3 twenty three
(0202)で覆われている。図 2(a)の状態では、ケルビンプローブ(0201)は絶縁体で ある酸ィ匕膜 (0202)とのみ接触しているため、接触抵抗が大きく正確な測定ができな い。しかし、ケルビンプローブの先端が鋭利な形状であれば、図 2(b)に示すように、ケ ルビンプローブ (0201)が表面の堅い酸ィ匕膜 (0202)を除去して被測定物の接続パ ッド本体であるアルミニウム(0203)と接触することができる。 Covered with (0202). In the state shown in Fig. 2 (a), the Kelvin probe (0201) is in contact only with the oxide film (0202), which is an insulator, so the contact resistance is large and accurate measurement cannot be performed. However, if the tip of the Kelvin probe is sharp, as shown in Fig. 2 (b), the Kelvin probe (0201) removes the hard oxide film (0202) on the surface and connects the object to be measured. Can contact with aluminum (0203) which is the pad body.
[0028] く実施形態 2 :構成〉 [0028] Embodiment 2: Configuration>
図 3及び図 4に本実施形態のケルビンプローブの一例を表した。本実施形態のケ ルビンプローブは、多角形の横断面を有する。横断面とは測定子の長手方向に対し て垂直な面である。図 3の例では横断面が長方形だが、この例に限らず多角形とは 3 つ以上の線分で囲まれた平面図形であれば良い。また図 4の例のように、多角形のう ちの少なくとも 1辺を直線に代えて曲線としても良 、。またケルビンプローブの横断面 全てが多角形である必要はなぐ一部の横断面が多角形であっても良い。また、ケル ビンプローブ全体の横断面が多角形であってもよぐケルビンプローブを構成する測 定子の横断面のみが多角形であっても良い。つまり、「多角形の横断面を有するケル ビンプローブ」とは、ケルビンプローブ全体の横断面が多角形のもの、ケルビンプロ ーブを構成する測定子の横断面のみが多角形のものの両者いずれであってもよい 趣旨である。 3 and 4 show an example of the Kelvin probe of this embodiment. The Kelvin probe of this embodiment has a polygonal cross section. The cross section is a plane perpendicular to the longitudinal direction of the probe. In the example of Fig. 3, the cross section is rectangular, but not limited to this example, the polygon may be a plane figure surrounded by three or more line segments. Also, as in the example in Figure 4, at least one side of the polygon may be replaced with a straight line to form a curve. Further, it is not necessary for the entire cross section of the Kelvin probe to be a polygon, and a part of the cross section may be a polygon. Further, only the cross section of the measuring element constituting the Kelvin probe may be a polygon, even if the cross section of the entire Kelvin probe is a polygon. In other words, a “Kelvin probe having a polygonal cross section” means that the cross section of the entire Kelvin probe is polygonal, or only the cross section of the probe constituting the Kelvin probe is polygonal. It may be there.
[0029] 本実施形態のケルビンプローブは、 2本の測定子が 1対となって使用されるものであ る。したがって、図 3または図 4のように測定子が 2本あって本実施形態のケルビンプ ローブとなる。ただし本実施形態においては、 2本の測定子の両方の横断面が多角 形である必要はなぐ片方が図 3または図 4のような形状で、もう片方が通常の測定子 (例えば横断面が円形である場合)であっても良 、。 [0029] The Kelvin probe of the present embodiment uses two measuring elements as a pair. Therefore, there are two measuring elements as shown in FIG. 3 or FIG. 4, and the Kelvin probe of this embodiment is obtained. However, in this embodiment, the cross sections of both of the two probe elements need to be polygonal, and one of the two probe elements has the shape shown in FIG. 3 or FIG. If it is a circle)
[0030] また、前記多角形は、正多角形でない多角形であることが好ましい。横断面が正 n 角形であるケルビンプローブは中心軸に対して n回対称性を有するので、視覚的に 方向合わせをすることが困難である。通常方向合わせは画像認識により行うため、横 断面が正多角形でない方が方向合わせがより容易となる。異方性が高いほど方向合 わせが容易となるので、多角形はできるだけ正多角形と形状が異なっていることが好 ましい。 [0030] The polygon is preferably a polygon that is not a regular polygon. Since the Kelvin probe having a regular n-square cross section has n-fold symmetry with respect to the central axis, it is difficult to visually align it. Since normal orientation is performed by image recognition, Direction alignment becomes easier when the cross section is not a regular polygon. The higher the anisotropy, the easier the orientation is. Therefore, it is preferable that the polygon is as different as possible from the regular polygon.
[0031] また、前記多角形は、多角形を構成する辺の数が奇数である奇数辺多角形である ことがさらに好ましい。奇数辺多角形とは、三角形や五角形などである。偶数辺多角 形(四角形、六角形など)は、対称性が高い場合が多ぐ奇数辺多角形の方が方向 合わせがより容易となるからである。 [0031] Further, the polygon is more preferably an odd-sided polygon in which the number of sides constituting the polygon is an odd number. The odd-sided polygon is a triangle or a pentagon. This is because even-sided polygons (rectangles, hexagons, etc.) are more symmetrical, and odd-sided polygons are easier to align.
[0032] 本実施形態のケルビンプローブは、多角形の横断面が、ケルビンプローブのシャン ク部分にあっても良い。シャンク部分とは、ケルビンプローブをプローブ装置に取り付 けるときの取り付け部分である。シャンク部分の横断面が多角形であることで、ケルビ ンプローブの取り付けの際における方向合わせが容易となるからである。 [0032] The Kelvin probe of the present embodiment may have a polygonal cross section in the shank portion of the Kelvin probe. A shank part is an attachment part when attaching a Kelvin probe to a probe apparatus. This is because the cross section of the shank portion is polygonal, so that it is easy to align the direction when attaching the Kelvin probe.
[0033] ケルビンプローブの材質は主に導電性の材料により構成される。そしてその導電性 材料は、酸ィ匕膜を除去するためにできるだけ硬い材質が好ましい。具体的にはタン ダステン、タングステン合金、タングステンカーバイド、ベリリウム銅などが導電性材料 として好ましい。ケルビンプローブは一種類の材質のみ力 構成されるものでなぐ複 数種類の材質により構成されていても良い。 [0033] The material of the Kelvin probe is mainly composed of a conductive material. The conductive material is preferably as hard as possible in order to remove the oxide film. Specifically, tungsten, tungsten alloy, tungsten carbide, beryllium copper, and the like are preferable as the conductive material. The Kelvin probe may be composed of a plurality of kinds of materials other than a force composed of only one kind of material.
[0034] またケルビンプローブのうち被測定物の接続パッドに接触する部分の表面を別の 材質で覆い、表面が酸ィ匕されにくいようにするのが好ましい。表面を覆う材質として、 金、白金などが挙げられる。これらの物質はめつきあるいは蒸着によりケルビンプロ一 ブ先端に薄膜として取り付けることができる。 [0034] Further, it is preferable that the surface of the portion of the Kelvin probe that contacts the connection pad of the object to be measured is covered with another material so that the surface is not easily oxidized. Examples of the material that covers the surface include gold and platinum. These materials can be attached as a thin film to the tip of the Kelvin probe by fitting or vapor deposition.
[0035] 酸ィ匕膜を効率的に削るために、先端頂角の曲率半径は 1 μ m以下のものが好まし い。曲率半径はこの値以上になると、酸ィ匕膜を十分に削ることができず、ケルビンプ ローブが被測定物の接続パッドに十分接触できないためである。 [0035] In order to efficiently cut the oxide film, it is preferable that the radius of curvature of the apex angle of the tip is 1 μm or less. If the radius of curvature exceeds this value, the oxide film cannot be cut sufficiently, and the Kelvin probe cannot sufficiently contact the connection pad of the object to be measured.
[0036] 多角形の横断面は、ケルビンプローブの先端部にあり、この先端部を被測定物と接 触させる際には、多角形の頂点のいずれか一から被測定物の接続パッド接触面に接 触するように構成することができる。なお先端部とは測定子先端力 20〜1000 mま での部分をいう。横断面が多角形であっても、先端の平坦部あるいは一辺が被測定 物の接続パッドと接触するのみでは表面の酸ィ匕膜等を十分削り取ることができないか らである。ケルビンプローブ先端の鋭利な部分 (多角形の頂点)が酸ィ匕膜を削るため には、ケルビンプローブを斜めから接触させなければならない。好ましくは先端面と 酸化膜表面とのなす角が 15度以上であることが好ま 、。 [0036] The cross section of the polygon is at the tip of the Kelvin probe, and when the tip is brought into contact with the object to be measured, the connection pad contact surface of the object to be measured starts from any one of the polygonal vertices. It can be configured to touch. The tip refers to the part with a tip force of 20 to 1000 m. Even if the cross-section is polygonal, can the surface oxide film, etc. be sufficiently removed by simply contacting the flat part or one side of the tip with the connection pad of the object to be measured? That's it. In order for the sharp part (polygonal apex) at the tip of the Kelvin probe to scrape the oxide film, the Kelvin probe must be contacted at an angle. Preferably, the angle formed by the tip surface and the oxide film surface is 15 degrees or more.
[0037] 多角形の横断面は、ケルビンプローブの先端部にあり、この先端部を、被測定物の 接続パッドと接触させる際には、前記多角形の頂点からは被測定物の接続パッド接 触面に接触しな 、ように構成されて 、ても良 、。多角形の頂点が被測定物の接続パ ッドに接触すると、前記のように酸ィ匕膜を除去できるが、酸ィ匕膜だけでなく被測定物 の接続パッド本体を傷つけることもある。被測定物の接続パッド本体に傷が付くと、表 面の凹凸により接触抵抗が増加し正確な検査を行うことができない。したがって、ケ ルビンプローブ先端の鋭利でな 、部分 (辺や平坦部分)を被測定物の接続パッド〖こ 接触させることがより好ましい場合もある。傷ができるだけつかないようにする力 傷を ある程度容認せざるを得ないかは、接続パッドの材質や、顧客の要求などに応じて 選択すればよい。 [0037] The cross section of the polygon is at the tip of the Kelvin probe. When this tip is brought into contact with the connection pad of the object to be measured, the connection pad contact of the object to be measured is contacted from the apex of the polygon. It is configured so that it does not touch the touch surface. When the apex of the polygon comes into contact with the connection pad of the object to be measured, the oxide film can be removed as described above. However, not only the oxide film but also the connection pad body of the object to be measured may be damaged. If the connection pad body of the object to be measured is damaged, contact resistance increases due to surface irregularities, and accurate inspection cannot be performed. Therefore, in some cases, it is more preferable to bring the portion (side or flat portion) of the tip of the Kelvin probe into contact with the connection pad of the object to be measured. The ability to tolerate scratches to some extent should be selected according to the connection pad material and customer requirements.
[0038] 図 11で表したように、多角形の横断面はケルビンプローブの先端部になぐこの先 端部の被測定物の接続パッドと接触させる面は、曲面で構成されていても良い。先 端が曲面であれば、接続パッドの本体を傷付けることが少ないためである。被測定物 の接続パッドの本体を傷つけないために、曲面の曲率半径は 5 m以上である。 [0038] As shown in FIG. 11, the polygonal cross section is connected to the tip of the Kelvin probe and the surface to be contacted with the connection pad of the object to be measured may be a curved surface. This is because if the tip end is a curved surface, the connection pad body is hardly damaged. The curvature radius of the curved surface is 5 m or more so as not to damage the body of the connection pad of the object to be measured.
[0039] 本実施形態のケルビンプローブは、好ましくは放電カ卩ェにより製造される。放電カロ ェによれば硬 、材料を微細加工するのに適して!/、る力 である。 [0039] The Kelvin probe of the present embodiment is preferably manufactured by a discharge cage. According to the discharge caloe, it is hard and suitable for microfabrication of materials!
[0040] く実施形態 2 :効果〉 [0040] <Embodiment 2: Effect>
本実施形態のケルビンプローブは先端形状が鋭利であるため、被測定物の接続パ ッドの表面に付着した酸ィ匕膜あるいは変質層を除去することができ、接触パッド本体 の金属とケルビンプローブ先端が直接接触することができる。そのため酸ィ匕膜または 変質層により生じていた接触抵抗を軽減し、測定精度を高めることができる。また横 断面形状が多角形であるため、ケルビンプローブ設置の際の方向合わせが容易とな る。 Since the Kelvin probe of this embodiment has a sharp tip shape, the oxide film or the altered layer attached to the surface of the connection pad of the object to be measured can be removed, and the metal of the contact pad main body and the Kelvin probe can be removed. The tip can be in direct contact. Therefore, the contact resistance caused by the oxide film or the altered layer can be reduced, and the measurement accuracy can be improved. In addition, since the cross-sectional shape is polygonal, it is easy to align the direction when installing the Kelvin probe.
[0041] く実施形態 3〉 [0041] Embodiment 3>
く実施形態 3 :概念〉 本実施形態は、実施形態 2を基礎として、 1対の測定子に絶縁層を挟み込み、 1対 の測定子と絶縁層とを一体ィ匕させたケルビンプローブに関する。 <Embodiment 3: Concept> The present embodiment relates to a Kelvin probe based on the second embodiment, in which an insulating layer is sandwiched between a pair of measuring elements, and the pair of measuring elements and the insulating layer are integrated.
[0042] く実施形態 3 :構成〉 [0042] <Embodiment 3: Configuration>
図 5に本実施形態のケルビンプローブを表す。本実施形態のケルビンプローブ (05 00)は、「第一測定子部」(0501)と、「第二測定子部」(0502)と、「絶縁層部」 (050 3)と、力 なる。 FIG. 5 shows the Kelvin probe of this embodiment. The Kelvin probe (0500) of the present embodiment has a “first probe part” (0501), a “second probe part” (0502), and an “insulating layer part” (0503).
[0043] 「第一測定子部」(0501)及び「第二測定子部」 (0502)は素子の電気的特性ある いは LEDの発光特性などを調べるため、素子に電気を通すためのものである。これら の構成については実施形態 2のケルビンプローブと同様である。 [0043] The “first probe part” (0501) and “second probe part” (0502) are used to conduct electricity through the element to investigate the electrical characteristics of the element or the light emission characteristics of the LED. It is. These configurations are the same as those of the Kelvin probe of the second embodiment.
[0044] 「絶縁層部」 (0503)は、第一測定子部(0501)と、第二測定子部(0502)と、によ つて挟みこまれるように配置され、前記測定子部を相互に絶縁するとともに、第一測 定子部(0501)と第二測定子部(0502)とを一体ィ匕するためのものである。絶縁層部 (0503)は電気を通さない絶縁体により構成されている。絶縁層部(0503)は単一の 絶縁体のみならず、複数の絶縁体力 構成されていても良い。絶縁層部(0503)は 第一測定子部 (0501)と第二測定子部 (0502)とを電気的に絶縁するため十分な厚 さ (第一測定子部と第二測定子部との間隔)が必要だが、微細化した素子の検査を 行うため、絶縁層部(0503)を必要以上に厚くすることはできない。絶縁層部(0503 )の好ま 、厚さとして 5 μ m以上 20 μ m以下である。また第一測定子部及び第二測 定子部の幅は約 20〜40 mである。通常用いられている検査用の接続パッドの幅は 通常約 80 μ mなので、接続パッドの大きさに合わせ、ケルビンプローブの幅は以上の ように決定される。 [0044] The "insulating layer part" (0503) is disposed so as to be sandwiched between the first probe part (0501) and the second probe part (0502). In addition to insulating the first measuring element (0501) and the second measuring element (0502), the first measuring element (0501) and the second measuring element (0502) are integrated together. The insulating layer portion (0503) is made of an insulator that does not conduct electricity. The insulating layer portion (0503) may be configured not only with a single insulator but also with a plurality of insulator forces. The insulation layer part (0503) has a sufficient thickness to electrically insulate the first probe part (0501) and the second probe part (0502). However, it is not possible to make the insulating layer (0503) thicker than necessary because fine elements are inspected. The thickness of the insulating layer (0503) is preferably 5 μm or more and 20 μm or less. The width of the first and second probe parts is about 20 to 40 m. The width of the test connection pad normally used is usually about 80 μm, so the width of the Kelvin probe is determined according to the size of the connection pad as described above.
[0045] 本実施形態のケルビンプローブは実施形態 1に記載のケルビンプローブの製造方 法にて製造されるものであっても良い。実施形態 1の製造方法を用いれば微細加工 が容易となり、微細素子の検査に適したケルビンプローブを製造することができる。 [0045] The Kelvin probe of the present embodiment may be manufactured by the method for manufacturing a Kelvin probe described in the first embodiment. If the manufacturing method of Embodiment 1 is used, microfabrication is facilitated, and a Kelvin probe suitable for inspection of microelements can be manufactured.
[0046] 図 6のように、本実施形態のケルビンプローブは先端部には絶縁層部(0603)が配 されていない構造であっても良い。先端まで絶縁層部(0603)を配すると絶縁層部の みが被測定物の接続パッドに接触し、第一測定子部 (0601)及び第二測定子部 (06 02)が被測定物の接続パッドに十分に接触せず、良好な測定結果が得られなくなる ことがあるためである。先端部の範囲については実施形態 1と同様である。 As shown in FIG. 6, the Kelvin probe of the present embodiment may have a structure in which the insulating layer portion (0603) is not arranged at the tip portion. When the insulating layer part (0603) is arranged to the tip, only the insulating layer part comes into contact with the connection pad of the object to be measured, and the first measuring part (0601) and the second measuring part (06 02) of the object to be measured Insufficient contact with the connection pad, resulting in poor measurement results Because there are things. The range of the tip is the same as in the first embodiment.
[0047] く実施形態 3 :効果〉 [0047] Embodiment 3: Effect>
本実施形態のケルビンプローブによれば、絶縁層があることで測定子どうしの接触 による導通を防止し、測定精度をより高めることができる。また絶縁層を測定子と一体 化することで、 1対の測定子の間隔を狭くすることができ、微細化した素子の検査に適 応できる。 According to the Kelvin probe of this embodiment, the presence of the insulating layer can prevent conduction due to contact between the probe elements, and can further improve the measurement accuracy. Also, by integrating the insulating layer with the measuring element, the distance between the pair of measuring elements can be narrowed, making it suitable for inspection of miniaturized elements.
[0048] く実施形態 4 :概念〉 [0048] <Embodiment 4: Concept>
本実施形態は実施形態 2及び 3を基礎としており、先端部が屈曲していることで測 定子が弾性を備え、測定子先端部が磨耗して測定子対の長さが異なるときでも、正 確に測定を行うことができるケルビンプローブに関する。 This embodiment is based on Embodiments 2 and 3, and the tip is bent, so that the probe has elasticity, and the tip of the probe wears out and the length of the probe pair is different. The present invention relates to a Kelvin probe that can accurately measure.
[0049] く実施形態 4 :構成〉 [0049] <Embodiment 4: Configuration>
図 7から図 10に本実施形態のケルビンプローブの一例を示す。本実施形態のケル ビンプローブは先端部が屈曲していることを特徴とする。測定子は長手方向に平行 な方向には弾力性がないが、長手方向に垂直な方向には弾力があるため、測定子 先端が被測定物の接続パッド面に対して垂直方向に弾性的に動くことが可能となる。 測定子が十分な弾力を備えるために、屈曲角度は 90度が最も好ましいが、この角度 に限定されない。 7 to 10 show an example of the Kelvin probe of this embodiment. The Kelvin probe of this embodiment is characterized in that the tip is bent. The probe is not elastic in the direction parallel to the longitudinal direction, but is elastic in the direction perpendicular to the longitudinal direction, so the tip of the probe is elastic in the direction perpendicular to the connection pad surface of the object to be measured. It becomes possible to move. In order for the probe to have sufficient elasticity, the bending angle is most preferably 90 degrees, but is not limited to this angle.
[0050] 図 7は、ケルビンプローブの屈曲が第一測定子部(0701)及び第二測定子部(070 2)を含む平面に対し垂直方向にされている場合の一例である。図 8は第一測定子部 (0801)及び第二測定子部(0803)の形状は図 7と同様で、これらの間に絶縁層部( 0802)が配されて 、る場合の一例を表した。 FIG. 7 shows an example in which the Kelvin probe is bent in a direction perpendicular to the plane including the first probe portion (0701) and the second probe portion (0702). FIG. 8 shows an example in which the shape of the first probe part (0801) and the second probe part (0803) is the same as that of FIG. 7, and an insulating layer part (0802) is arranged between them. did.
[0051] ケルビンプローブ先端の屈曲は測定子対の!/、ずれか一方の側になされて!、ても良 い。図 9の例では、ケルビンプローブの屈曲は、第一測定子部(0901)から見て、第 二測定子部の方になされている。また図 10は、第一測定子部(1001)及び第二測定 子部(1003)の形状は図 9と同様で、これらの間に絶縁層部(1002)が配されている 場合の一例を表した。 [0051] The bending of the tip of the Kelvin probe may be made on one side of the probe pair! In the example of FIG. 9, the Kelvin probe is bent toward the second probe part as viewed from the first probe part (0901). FIG. 10 shows an example in which the shape of the first probe part (1001) and the second probe part (1003) is the same as that of FIG. 9, and the insulating layer part (1002) is arranged between them. expressed.
[0052] 先端部の範囲、先端面積については実施形態 2と同様である。 [0052] The range and the tip area of the tip are the same as in the second embodiment.
[0053] く実施形態 4 :効果〉 本実施形態のケルビンプローブによれば、先端部が屈曲して 、るため被測定物の 接続パッドに垂直な方向に対して弾力性があり、 1対の測定子の長さが異なる場合で あっても、弾力によって長さをそろえることができるため、正確な検査を行うことが可能 である。 [0053] <Embodiment 4: Effect> According to the Kelvin probe of the present embodiment, the tip is bent, so that it is elastic in the direction perpendicular to the connection pad of the object to be measured, and the length of the pair of measuring elements is different. However, since the length can be adjusted by the elasticity, an accurate inspection can be performed.
[0054] く実施形態 5〉 [0054] <Embodiment 5>
く実施形態 5 :概念〉 Embodiment 5: Concept>
本実施形態のケルビンプローブは、ケルビンプローブを構成する 2本の測定子の一 方が橈むことで、 2本の測定子が両方とも検査対象に確実に接触することができるこ とを特徴とする。 The Kelvin probe of this embodiment is characterized in that one of the two measuring elements constituting the Kelvin probe can be held, so that both of the two measuring elements can reliably contact the inspection object. To do.
[0055] く実施形態 5 :構成〉 [0055] <Embodiment 5: Configuration>
図 14に本実施形態のケルビンプローブの外観及び、ケルビンプローブが検査対象 に接触するときの様子の一例を示した。ケルビンプローブは第一測定子部(1401)、 第二測定子部(1402)及び絶縁層 (1403)とから構成される。第一測定子部(1401 )と第二測定子部とは、絶縁層 (1403)によって絶縁されている。本実施形態のケル ビンプローブは、第一測定子部(1401)又は第二測定子部(1402)のいずれか一方 のみが橈むことで検査対象(1404)に対して弾性接触可能な弾性構造を有する。図 14の例では第二測定子部(1402)のみが橈む構造となっている。 FIG. 14 shows an example of the appearance of the Kelvin probe of the present embodiment and the state when the Kelvin probe contacts the inspection object. The Kelvin probe includes a first probe part (1401), a second probe part (1402), and an insulating layer (1403). The first probe part (1401) and the second probe part are insulated by an insulating layer (1403). The Kelvin probe of the present embodiment has an elastic structure that can be elastically contacted with the object to be inspected (1404) when only one of the first probe portion ( 1401 ) or the second probe portion (1402) is pinched. Have In the example of FIG. 14, only the second probe portion (1402) is held.
[0056] 絶縁層 (1403)は、第一測定子部(1401)と第二測定子部(1402)とを部分的に固 着するとともに、測定子の先端部近傍は非固着とすることで前記弾性構造をなす。し たがって、第二測定子部(1402)の非固着となっている先端部分は第一測定子部か ら離れて弹性的に橈むことができる。 [0056] The insulating layer (1403) is configured such that the first probe part (1401) and the second probe part (1402) are partially fixed, and the vicinity of the tip part of the probe is not fixed. The elastic structure is formed. Therefore, the tip portion where the second probe portion (1402) is not fixed can be held away from the first probe portion and can be inertially pinched.
[0057] さらに本実施形態のケルビンプローブは、検査対象(1404)に向かって第一測定 子部(1401)と第二測定子部(1402)の突出量が異なる。すなわち、第一測定子部( 1401)の先端と、第二測定子部(1402)の先端が、検査対象(1404)力も同じ距離 にあるのではなぐ異なった距離にあるように配置されている。図 14 (a)の例では、第 一測定子部(1401)よりも第二測定子部(1402)の方がより突出して 、る。このように することで、第二測定子部(1402)が先に検査対象に接触し、弾性により橈むことで 、第一測定子部(1401)も検査対象に接触することができる(図 14 (b) )。 [0058] また、検査対象(1404)に対して押し付けて行くことで第一測定子部(1401)と、第 二測定子部(1402)の両者がともに検査対象に接触する際に第二測定子部(1402 )を介して検査対象(1404)に加えられる荷重が 10g重以下となるような弾性を第二 測定子部(1402)が有する。突出して!/、る第二測定子部(1402)が検査対象(1404 )に接触すると、第二測定子部(1402)に荷重をかけることで第二測定子部(1402) を橈ませ、第一測定子部(1401)を検査対象(1404)に接触させる。このとき、第一 測定子部(1401)が検査対象(1404)に接触するまで荷重は徐々に強くなる。した がって、第一測定子部(1401)及び第二測定子部(1402)が両方検査対象に接触 した瞬間が最も荷重が高くなる。このときの荷重を 10g重以下とすることで、第二測定 子部(1402)が破壊されるのを防止することができる。 Furthermore, in the Kelvin probe of the present embodiment, the amount of protrusion of the first probe part (1401) and the second probe part (1402) differs toward the inspection object (1404). That is, the tip of the first probe part (1401) and the tip of the second probe part (1402) are arranged so that they are at different distances than the inspection target (1404) force is at the same distance. . In the example of FIG. 14 (a), the second probe portion (1402) protrudes more than the first probe portion (1401). By doing so, the second probe portion (1402) first comes into contact with the object to be inspected, and the first probe portion (1401) can also contact the object to be inspected by being elastically pinched (see FIG. 14 (b)). [0058] In addition, by pressing against the inspection object (1404), the second measurement part (1401) and the second measurement part (1402) are both in contact with the inspection object when the second measurement is performed. The second measuring element (1402) has elasticity so that the load applied to the object to be inspected (1404) through the element (1402) is 10 g weight or less. When the second probe (1402) comes into contact with the object to be inspected (1404), the second probe (1402) is bent by applying a load to the second probe (1402), The first probe portion (1401) is brought into contact with the inspection object (1404). At this time, the load gradually increases until the first probe portion (1401) contacts the inspection target (1404). Therefore, the load is highest at the moment when both the first probe part (1401) and the second probe part (1402) are in contact with the test object. By making the load at this time 10 g or less, it is possible to prevent the second probe part (1402) from being destroyed.
[0059] く実施形態 5 :効果〉 [0059] <Embodiment 5: Effect>
本実施形態のケルビンプローブにより、 2つの測定子が両方とも確実に接続パッド に接触するため、素子の検査の精度を高めることができる。 With the Kelvin probe of this embodiment, since both of the two measuring elements reliably contact the connection pad, it is possible to improve the accuracy of the element inspection.
[0060] く実施形態 6〉 [0060] Embodiment 6>
く実施形態 6 :概念〉 Embodiment 6: Concept>
本実施形態のケルビンプローブは、ケルビンプローブが検査対象に接触する前は 2本の測定子の先端近傍が接触しており、検査対象に接触した後は 2本の測定子が 離れる構造となっている。 The Kelvin probe of this embodiment has a structure in which the vicinity of the tip of two measuring elements is in contact before the Kelvin probe contacts the inspection object, and the two measuring elements are separated after contacting the inspection object. Yes.
[0061] く実施形態 6 :構成〉 [0061] <Embodiment 6: Configuration>
図 15に本実施形態のケルビンプローブの一例を示す。本実施形態のケルビンプロ ーブは、 V、ずれかの測定子部の先端近傍が検査対象に非接触時は両測定子部の 先端近傍は接触状態にあり、いずれかの測定子部の先端近傍が検査対象に接触す る際の接触圧によってその接触した測定子部が橈み、前記接触状態から非接触状 態になる。接触状態とは、図 15 (a)で示したように、第一測定子部(1501)と、第二測 定子部(1502)とが先端近傍で接触している状態、すなわち、第一測定子部と第二 測定子部とが導通している状態を表す。第二測定子部(1502)が先に検査対象(15 03)に接触すると、弾性によって橈み、第一測定子部(1501)力も離れる(図 15 (b) ) 。このようにすることで先端部を絶縁する必要がなぐ先端部をより微細化することが できる。 FIG. 15 shows an example of the Kelvin probe of this embodiment. In the Kelvin probe of this embodiment, when the vicinity of the tip of either the V or the displacement probe part is not in contact with the object to be inspected, the vicinity of the tip of both probe parts is in contact, and the tip of one of the probe parts Due to the contact pressure when the vicinity is in contact with the object to be inspected, the contact portion that is in contact is stagnated, and the contact state is changed to a non-contact state. As shown in FIG. 15 (a), the contact state is a state in which the first probe part (1501) and the second probe part (1502) are in contact near the tip, that is, the first measurement part. This represents a state in which the slave part and the second probe part are conducting. When the second probe portion (1502) first contacts the object to be inspected (1533), it is stiffened by elasticity and the force of the first probe portion (1501) is also released (FIG. 15 (b)). By doing so, it is possible to further miniaturize the tip portion that does not need to be insulated. it can.
[0062] 第二測定子部(1502)が先に検査対象(1503)に接触すると、第一測定子部(15 01)力 離れるため、導通状態力 非導通状態となるため抵抗値が増加する。第一 測定子部(1501)も検査対象(1503)に接触すると、検査対象を通じて第一測定子 部(1501)と第二測定子部(1502)とが再び導通するため抵抗値は減少する。した がって、抵抗値を測定することにより、第一測定子部(1501)または第二測定子部(1 502)が接触したかどうかを判断することができるため、ケルビンプローブの降下速度 の制御が容易になる。 [0062] When the second probe portion (1502) comes into contact with the object to be inspected (1503) first, the first probe portion (15 01) is separated from the force, so that the conductive state force becomes non-conductive and the resistance value increases. . When the first probe part (1501) also comes into contact with the inspection object (1503), the first measurement element part (1501) and the second measurement element part (1502) again conduct through the inspection object, so that the resistance value decreases. Therefore, by measuring the resistance value, it can be determined whether the first probe portion (1501) or the second probe portion (1502) is in contact, so that the descending speed of the Kelvin probe can be determined. Control becomes easy.
[0063] く実施形態 6 :効果〉 [0063] <Embodiment 6: Effect>
本実施形態のケルビンプローブは、先端部を微細化することで、微細な素子の検 查に用いることができる。またケルビンプローブの降下速度を容易に制御することが でき、ケルビンプローブ及び検査対象を傷つけることがな!、。 The Kelvin probe of this embodiment can be used for detecting fine elements by miniaturizing the tip. Also, the descending speed of the Kelvin probe can be controlled easily, so that the Kelvin probe and the inspection object are not damaged!
[0064] く実施形態 7〉 [0064] <Embodiment 7>
く実施形態 7 :概念〉 Embodiment 7: Concept>
本実施形態のケルビンプローブは、 2本の測定子のうち片方は弾性の小さ 、構造 であり、もう片方は弾性の大きい構造とすることで、 2本の測定子のうち片方のみが橈 むことができることを特徴とする。 The Kelvin probe of the present embodiment has a structure in which one of the two measuring elements has a small elasticity and the other has a structure having a large elasticity, so that only one of the two measuring elements is included. It is characterized by being able to.
[0065] く実施形態 7 :構成〉 [0065] <Embodiment 7: Configuration>
図 16に本実施形態のケルビンプローブの一例を示した。本実施形態のケルビンプ ローブは第一測定子部(1601)と第二測定子部(1602)とから構成される。第一測 定子部(1601)は、弾性が第二測定子部(1602)に比較して小さい構造であり、第 二測定子部(1602)は、弾性が第一測定子部(1601)に比較して大き 、構造である 。弾性が大きいとは、橈みやすい性質のことであり、形状を細くしたり、弾性の大きい 材質を用いるなどにより達成される。 FIG. 16 shows an example of the Kelvin probe of this embodiment. The Kelvin probe of this embodiment is composed of a first probe part (1601) and a second probe part (1602). The first probe part (1601) has a smaller elasticity than the second probe part (1602), and the second probe part (1602) has an elasticity less than that of the first probe part (1601). Compared with the size and structure. High elasticity means a property that tends to stagnate, and is achieved by making the shape thin or using a material having high elasticity.
[0066] 図 17は本実施形態のケルビンプローブの別の一例及びその製造工程を示した。 FIG. 17 shows another example of the Kelvin probe of this embodiment and the manufacturing process thereof.
図 17の例では、第一測定子部(1701)はタングステン系バルタ材料力もなり、第二測 定子部(1702)はステンレス系針金状材料カゝらなる。タングステンバルタ系材料は、 タングステンを主要成分とし、第二測定子部(1702)よりも太い形状の材料である。ス テンレス系針金状材料は、ステンレスを主要成分とし、第一測定子部(1701)よりも細 い形状の材料である。針金状材料とは、糸状の細い材料とは限らず、図 17に示した ように、弾性のある薄!、板状の材料であっても良 ヽ。 In the example of FIG. 17, the first stylus part (1701) is also made of tungsten-based butter material force, and the second stylus part (1702) is made of stainless steel wire-like material. The tungsten barta-based material is a material whose main component is tungsten and is thicker than the second probe portion (1702). The The stainless steel wire-like material is made of stainless steel as a main component and is thinner than the first probe portion (1701). The wire-like material is not limited to a thin thread-like material, and may be an elastic thin, plate-like material as shown in FIG.
[0067] 第一測定子部(1701)は、図 17に示すように、棒状のタングステン系バルタ材料の 先端を削り、一の面を平坦化することにより製造される。一方、第二測定子部(1702) は、図 17に示すようなステンレス系針金状材料を、先端を尖らせた形状に加工し、先 端を曲げることによって得られる。第一測定子部(1701)の平坦面に絶縁層を貼り付 け、その上に第二測定子部を取り付けることによってケルビンプローブが完成する。 As shown in FIG. 17, the first stylus part (1701) is manufactured by cutting the tip of a bar-shaped tungsten-based barter material and flattening one surface. On the other hand, the second probe portion (1702) is obtained by processing a stainless steel wire-like material as shown in FIG. 17 into a shape with a sharpened tip and bending the tip. An insulating layer is attached to the flat surface of the first probe portion (1701), and a second probe portion is attached thereon, thereby completing the Kelvin probe.
[0068] く実施形態 7 :効果〉 [0068] <Embodiment 7: Effect>
本実施形態のケルビンプローブは、 2本の測定子のうち 1本が橈みやすい性質を有 し、もう 1本が硬い性質を有するため、ケルビンプローブが変形せずに、検査対象に 弹性的に接触することができる。 In the Kelvin probe of this embodiment, one of the two measuring elements has a property of being easily squeezed, and the other has a property of being hard, so that the Kelvin probe is not deformed and is in contact with the object to be inspected. can do.
[0069] く実施形態 8〉 [0069] <Embodiment 8>
く実施形態 8 :概念〉 Embodiment 8: Concept>
本実施形態のケルビンプローブは 2本の測定子が先端近傍で鋭角で接触している In the Kelvin probe of this embodiment, two measuring elements are in contact at an acute angle near the tip.
[0070] く実施形態 8 :構成〉 [0070] <Embodiment 8: Configuration>
図 18〜20に本実施形態のケルビンプローブの一例を示す。図 18はケルビンプロ ーブの全体図、図 19はケルビンプローブ先端を拡大した図、図 20はケルビンプロ一 ブの断面図である。本実施形態のケルビンプローブは、第二測定子部(1802)の先 端線( 1803)が第一測定子部( 1801 )の中心線( 1804)に対して鋭角である。中心 線(1804)及び先端線(1803)は、図 18で示したように、それぞれ第一測定子部(1 801)及び第二測定子部(1802)の先端部分での中心軸である。 18-20 show an example of the Kelvin probe of this embodiment. 18 is an overall view of the Kelvin probe, FIG. 19 is an enlarged view of the tip of the Kelvin probe, and FIG. 20 is a cross-sectional view of the Kelvin probe. In the Kelvin probe of this embodiment, the leading end line (1803) of the second probe part (1802) is acute with respect to the center line (1804) of the first probe part (1801). As shown in FIG. 18, the center line (1804) and the tip line (1803) are the central axes at the tip parts of the first probe part (1801) and the second probe part (1802), respectively.
[0071] 図 21に本実施形態のケルビンプローブの別の一例を示す。図 21の例では、第二 測定子部(2102)の前記鋭角となる先端線は、第二測定子部に複数の屈曲節を設 けることで形成されている。 FIG. 21 shows another example of the Kelvin probe of the present embodiment. In the example of FIG. 21, the sharp tip of the second probe portion (2102) is formed by providing a plurality of bent nodes on the second probe portion.
[0072] く実施形態 8 :効果〉 [0072] <Embodiment 8: Effect>
本実施形態のケルビンプローブは、 2本の測定子の接触角度を鋭角とすることで、 ケルビンプローブの屈曲部分に加わる応力を減少させることができる。特に屈曲節を 複数とすれば屈曲部に加わる応力を分散させることができる。 In the Kelvin probe of this embodiment, the contact angle between the two probe is an acute angle, The stress applied to the bent portion of the Kelvin probe can be reduced. In particular, if there are a plurality of bending nodes, the stress applied to the bending portion can be dispersed.
[0073] く実施形態 9〉 [0073] <Embodiment 9>
く実施形態 9 :概念〉 Embodiment 9: Concept>
本実施形態のケルビンプローブは、 2本の測定子の先端が、検査対象への接触時 に、プローブのすべり方向に対して、異なった軸上にあることを特徴とする。 The Kelvin probe of this embodiment is characterized in that the tips of the two measuring elements are on different axes with respect to the sliding direction of the probe when contacting the inspection object.
[0074] く実施形態 9 :構成〉 [0074] <Embodiment 9: Configuration>
図 22 (a)は、本実施形態のケルビンプローブが検査対象に接触する様子を上から 見た図である。第一測定子部(2201)と、第二測定子部(2202)の先端 (2204、 22 05)は、プローブのすべり方向に対して一軸上にない。プローブのすべり方向とは、 ケルビンプローブを検査対象(2203)に接触させた後、第一測定子部(2201)及び 第二測定子部(2202)が検査対象上をすベる方向である。図 22 (a)の例では、矢印 で示した方向がすべり方向である。一方、図 22 (b)には第一測定子部と、第二測定 子部の先端(2206、 2207)がプローブのすべり方向に対して一軸上にある場合の 配置を示した。 FIG. 22 (a) is a top view of the state in which the Kelvin probe of this embodiment is in contact with the inspection object. The tip (2204, 2205) of the first probe part (2201) and the second probe part (2202) are not on one axis with respect to the sliding direction of the probe. The sliding direction of the probe is a direction in which the first probe portion (2201) and the second probe portion (2202) slide on the inspection object after the Kelvin probe is brought into contact with the inspection object (2203). In the example of Fig. 22 (a), the direction indicated by the arrow is the slip direction. On the other hand, FIG. 22 (b) shows the arrangement when the first probe part and the tips (2206, 2207) of the second probe part are on one axis with respect to the sliding direction of the probe.
[0075] く実施形態 9 :効果〉 [0075] <Embodiment 9: Effect>
本実施形態のケルビンプローブは、 2本の測定子が、すべり方向に対して斜めに配 置されていることで、検査対象の面積を有効に活用することができる。したがって、微 細化した素子の測定に適して 、る。 The Kelvin probe of this embodiment can effectively utilize the area to be inspected by arranging the two measuring elements obliquely with respect to the sliding direction. Therefore, it is suitable for the measurement of miniaturized elements.
[0076] く実施形態 10〉 [0076] <Embodiment 10>
く実施形態 10 :概念〉 Embodiment 10: Concept>
本実施形態は、実施形態 5〜9のケルビンプローブを有する検査装置及びその動 作方法に関する。 The present embodiment relates to an inspection apparatus having the Kelvin probe of Embodiments 5 to 9 and an operation method thereof.
[0077] く実施形態 10 :構成〉 [0077] <Embodiment 10: Configuration>
図 23に本実施形態の検査装置の概観を示す。本実施形態の検査装置は、「検査 対象載置台」(2301)と、「ケルビンプローブ保持部」(2302)と、「測定子部」(2303) とからなる。 FIG. 23 shows an overview of the inspection apparatus of this embodiment. The inspection apparatus according to the present embodiment includes an “inspection mounting table” (2301), a “Kelvin probe holding unit” (2302), and a “measurement unit” (2303).
[0078] 「検査対象載置台」 (2301)は、検査対象を載置する。検査対象載置台(2301)に 載せられる検査対象は、 1つだけでなく複数あっても良い。また、検査対象載置台(2 301)は、ケルビンプローブに接触させるため、上下動可能としても良い。 The “inspection target mounting table” (2301) mounts the inspection target. On the inspection table (2301) There may be more than one test object to be placed. Moreover, since the inspection object mounting table (2301) is brought into contact with the Kelvin probe, it may be movable up and down.
[0079] 「ケルビンプローブ保持部」(2302)は、実施形態 5〜9の!、ずれか一に記載のケル ビンプローブを保持する。 The “Kelvin probe holding part” (2302) holds the Kelvin probe according to any one of Embodiments 5 to 9!
[0080] 「測定子部」 (2303)は、実施形態 5〜9で説明した第一測定子部と第二測定子部 とを有する。 The “measurement part” (2303) includes the first measurement part and the second measurement part described in the fifth to ninth embodiments.
[0081] 検査装置には、この他に、測定子部(2303)が検査対象に接触したかどうかを観察 するためのカメラが取り付けられて ヽても良!、。 [0081] In addition to this, the inspection apparatus may be provided with a camera for observing whether or not the probe (2303) has contacted the inspection object!
[0082] 図 24にケルビンプローブ保持部が、測定子部を検査対象に接触させる様子の一 例を示した。図 24の例では、ケルビンプローブ保持部は、検査対象載置台の検査対 象載置平面に対して弾性構造を有する測定子部(2402)の先端を略垂直に降下さ せる。略垂直に降下させる理由は以下の通りである。ケルビンプローブの位置合わせ をするためのカメラは、検査対象(2403)の真上に設置されていることが多い。カメラ 力 測定子のケルビンプローブを覼 、た場合、測定子の先端が検査対象の真上に ある力否かが容易にわかる。したがって、測定子の先端を検査対象の真上に設置す れば、測定子を垂直に降下させることにより、測定子先端が検査対象に確実に接触 するため、ケルビンプローブ先端の位置決めの制御が容易となる。 FIG. 24 shows an example of a state in which the Kelvin probe holding unit brings the measuring part into contact with the inspection object. In the example of FIG. 24, the Kelvin probe holding part lowers the tip of the measuring element part (2402) having an elastic structure substantially perpendicular to the inspection target mounting plane of the inspection target mounting table. The reason for descending substantially vertically is as follows. The camera for aligning the Kelvin probe is often installed directly above the inspection target (2403). If the Kelvin probe of the camera force gauge is used, it is easy to see whether the tip of the gauge is directly above the object to be inspected. Therefore, if the tip of the probe is installed directly above the object to be inspected, the probe tip is brought into vertical contact with the object to be inspected, so that the positioning of the Kelvin probe tip can be easily controlled. It becomes.
[0083] 図 25にケルビンプローブ保持部が、測定子部を検査対象に接触させる様子の別 の一例を示した。図 25の例では、ケルビンプローブ保持部は、検査対象載置台の検 查対象載置平面に対して弾性構造を有する測定子部 (2502)の先端を弾性構造を 有さない測定子部(2501)側の検査対象載置平面力もみて 90度未満の角度( Θ )を 保ちながら略垂直降下させる。このようにしたのは、弾性構造を有する測定子部の先 端軸が検査対象載置平面に対し垂直の場合には、先端部が検査対象に接触してい るかどうかをカメラにより確認することが困難であるが、先端軸を垂直から若干ずらす ことで、先端部をカメラにより確認しやすくすることができるからである。 FIG. 25 shows another example of the state in which the Kelvin probe holding unit brings the probe portion into contact with the inspection object. In the example of FIG. 25, the Kelvin probe holding unit has a measuring part (2501) having no elastic structure at the tip of a measuring part (2502) having an elastic structure with respect to the inspection target mounting plane of the inspection target mounting table. Observe the mounting plane force of the inspection side on the) side and move it down substantially vertically while maintaining an angle (Θ) of less than 90 degrees. This is because, when the tip end axis of the measuring part having an elastic structure is perpendicular to the plane to be inspected, it is confirmed by the camera whether the tip is in contact with the object to be inspected. This is because it is easy to confirm the tip with a camera by slightly shifting the tip axis from the vertical.
[0084] 図 26に本実施形態の検査装置の動作方法の一例を示した。ケルビンプローブを 垂直に降下させると (a)、検査対象 (2603)側に突き出て!/ヽる第二測定子部(2602) が先に検査対象に接触する (b)。その後ケルビンプローブを垂直に降下させる力を 加えたままでは、第二測定子部(2602)の先端は橈みによって図 26の左側に移動 することになる。しかし、検査対象(2603)の面積が小さいと、第二測定子部(2602) の先端のこの移動により、第二測定子部(2602)が検査対象(2603)外に出てしまう おそれがある。そのことを防止するため、遅くとも第一測定子部(2601)又は第二測 定子部(2602)のいずれか一が検査対象(2603)に接触した後はケルビンプローブ に対してシャンク側に向力う力を加えると良 ヽ(c)。シャンク側とはケルビンプローブ の取っ手側であって、図 26では右側である。図 26の例では、シャンク側に向かう力を カロえるため、第二測定子部(2604)が検査対象(2603)に接触した後、回動軸(260 4)を軸として回転させることにより、第一測定子部(2601)及び第二測定子部(2602 )をシャンク側に向力う力をカ卩える。なお、シャンク側に向力う力をカ卩える方法としては 、図 26に示した方法に限られない。例えば、第二測定子部(2602)が検査対象に接 触する前から、回動軸(2604)を軸として回転させることによりケルビンプローブを降 下させても良い。 FIG. 26 shows an example of the operation method of the inspection apparatus of the present embodiment. When the Kelvin probe is lowered vertically (a), the second stylus part (2602) sticking out / spins toward the inspection object (2603) comes into contact with the inspection object first (b). Then the force to lower the Kelvin probe vertically If added, the tip of the second probe (2602) will move to the left in FIG. However, if the area of the test object (2603) is small, the movement of the tip of the second probe part (2602) may cause the second probe part (2602) to go out of the test object (2603). . To prevent this, at least, after either one of the first probe part (2601) or the second probe part (2602) comes into contact with the object to be inspected (2603), the directional force on the shank side with respect to the Kelvin probe It is good (c) when we apply the force. The shank side is the handle side of the Kelvin probe, which is the right side in Fig. 26. In the example of FIG. 26, in order to reduce the force toward the shank side, the second probe (2604) contacts the object to be inspected (2603), and then rotated around the rotation axis (2604), The force that forces the first probe part (2601) and the second probe part (2602) to the shank side is covered. Note that the method for measuring the force applied to the shank side is not limited to the method shown in FIG. For example, the Kelvin probe may be lowered by rotating around the rotation shaft (2604) before the second probe portion (2602) contacts the object to be inspected.
[0085] く実施形態 10 :効果〉 [0085] <Embodiment 10: Effect>
本実施形態の検査装置により、 2本の測定子を確実に検査対象に接触させることが でき、測定精度を高めることができる。 With the inspection device of this embodiment, the two measuring elements can be reliably brought into contact with the inspection object, and the measurement accuracy can be improved.
図面の簡単な説明 Brief Description of Drawings
[0086] [図 1]実施形態 1のケルビンプローブにより半導体の検査を行うときの概念図。 FIG. 1 is a conceptual diagram when a semiconductor is inspected by the Kelvin probe of the first embodiment.
[図 2]実施形態 1のケルビンプローブを被測定物の接続パッドに接触させるときの概 念図。 FIG. 2 is a schematic diagram when the Kelvin probe of Embodiment 1 is brought into contact with the connection pad of the object to be measured.
[図 3]実施形態 1のケルビンプローブの先端部分の一例を表した図。 FIG. 3 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the first embodiment.
[図 4]実施形態 1のケルビンプローブの先端部分の一例を表した図。 FIG. 4 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the first embodiment.
[図 5]実施形態 2のケルビンプローブの先端部分の一例を表した図。 FIG. 5 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a second embodiment.
[図 6]実施形態 2のケルビンプローブの先端部分の一例を表した図。 FIG. 6 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the second embodiment.
[図 7]実施形態 3のケルビンプローブの先端部分の一例を表した図。 FIG. 7 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
[図 8]実施形態 3のケルビンプローブの先端部分の一例を表した図。 FIG. 8 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
[図 9]実施形態 3のケルビンプローブの先端部分の一例を表した図。 FIG. 9 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a third embodiment.
[図 10]実施形態 3のケルビンプローブの先端部分の一例を表した図。 [図 11]実施形態 1のケルビンプローブの一例を表した図。 FIG. 10 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the third embodiment. FIG. 11 is a diagram illustrating an example of a Kelvin probe according to the first embodiment.
圆 12]実施形態 1の処理の流れを説明する図。 圆 12] A diagram illustrating the flow of processing in the first embodiment.
圆 13]実施形態 1を説明するための概念図。 圆 13] A conceptual diagram for explaining the first embodiment.
[図 14]実施形態 5のケルビンプローブの先端部分の一例を表した図。 FIG. 14 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a fifth embodiment.
[図 15]実施形態 6のケルビンプローブの先端部分の一例を表した図。 FIG. 15 is a diagram illustrating an example of a tip portion of a Kelvin probe according to a sixth embodiment.
[図 16]実施形態 7のケルビンプローブの先端部分の一例を表した図。 FIG. 16 is a diagram illustrating an example of a tip portion of the Kelvin probe according to the seventh embodiment.
[図 17]実施形態 7のケルビンプローブ及びその製造方法の一例を表した図。 FIG. 17 is a diagram illustrating an example of a Kelvin probe and a manufacturing method thereof according to Embodiment 7.
[図 18]実施形態 8のケルビンプローブの一例を表した図。 FIG. 18 is a diagram illustrating an example of a Kelvin probe according to an eighth embodiment.
[図 19]実施形態 8のケルビンプローブの先端部分の一例を表した図。 FIG. 19 is a diagram illustrating an example of a tip portion of a Kelvin probe according to an eighth embodiment.
[図 20]実施形態 8のケルビンプローブの一例を表した図。 FIG. 20 shows an example of a Kelvin probe of Embodiment 8.
[図 21]実施形態 8のケルビンプローブの先端部分の一例を表した図。 FIG. 21 is a diagram illustrating an example of a tip portion of a Kelvin probe according to an eighth embodiment.
圆 22]実施形態 9のケルビンプローブが検査対象に接触する様子を表した図。 圆 23]実施形態 10の検査装置の一例を表した図。 圆 22] A diagram showing a state in which the Kelvin probe of Embodiment 9 is in contact with the inspection object.圆 23] A diagram showing an example of the inspection apparatus of the tenth embodiment.
[図 24]実施形態 10の検査装置の一例を表した図。 FIG. 24 is a diagram illustrating an example of an inspection apparatus according to a tenth embodiment.
圆 25]実施形態 10の検査装置の一例を表した図。 25] A diagram showing an example of an inspection apparatus according to the tenth embodiment.
[図 26]実施形態 10の検査装置の動作方法の一例を表した図。 FIG. 26 is a diagram illustrating an example of an operation method of the inspection apparatus according to the tenth embodiment.
符号の説明 Explanation of symbols
0201 ケルビンプローブ 0201 Kelvin probe
0202 酸化膜 (A1 0 ) 0202 Oxide film (A1 0)
2 3 twenty three
0203 ァノレミニゥム 0203 Anoleum
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006549014A JPWO2006068156A1 (en) | 2004-12-22 | 2005-12-20 | Kelvin probe |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-372010 | 2004-12-22 | ||
| JP2004372010 | 2004-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2006068156A1 true WO2006068156A1 (en) | 2006-06-29 |
Family
ID=36601756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2005/023413 Ceased WO2006068156A1 (en) | 2004-12-22 | 2005-12-20 | Kelvin probe |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2006068156A1 (en) |
| WO (1) | WO2006068156A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008116284A (en) * | 2006-11-02 | 2008-05-22 | Takeshi Kaneko | Contact probe and method of manufacturing contact probe |
| KR100953287B1 (en) | 2007-03-29 | 2010-04-20 | 엔이씨 일렉트로닉스 가부시키가이샤 | Semiconductor inspection device |
| JP2017172999A (en) * | 2016-03-18 | 2017-09-28 | ラピスセミコンダクタ株式会社 | probe |
| WO2021149668A1 (en) * | 2020-01-24 | 2021-07-29 | ミネベアミツミ株式会社 | Probe, measuring device, and measuring method |
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| JPH0328479U (en) * | 1989-07-28 | 1991-03-20 | ||
| JPH03123272U (en) * | 1990-03-29 | 1991-12-16 | ||
| JPH08160074A (en) * | 1994-12-01 | 1996-06-21 | Hioki Ee Corp | Four-terminal measurement probe |
| JP2000206146A (en) * | 1999-01-19 | 2000-07-28 | Mitsubishi Electric Corp | Probe needle |
| JP2000346874A (en) * | 1999-06-04 | 2000-12-15 | Micronics Japan Co Ltd | Probe and probe card |
| JP2003090849A (en) * | 2001-09-20 | 2003-03-28 | Tesetsuku:Kk | Method and device for measuring electronic part |
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2005
- 2005-12-20 WO PCT/JP2005/023413 patent/WO2006068156A1/en not_active Ceased
- 2005-12-20 JP JP2006549014A patent/JPWO2006068156A1/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0328479U (en) * | 1989-07-28 | 1991-03-20 | ||
| JPH03123272U (en) * | 1990-03-29 | 1991-12-16 | ||
| JPH08160074A (en) * | 1994-12-01 | 1996-06-21 | Hioki Ee Corp | Four-terminal measurement probe |
| JP2000206146A (en) * | 1999-01-19 | 2000-07-28 | Mitsubishi Electric Corp | Probe needle |
| JP2000346874A (en) * | 1999-06-04 | 2000-12-15 | Micronics Japan Co Ltd | Probe and probe card |
| JP2003090849A (en) * | 2001-09-20 | 2003-03-28 | Tesetsuku:Kk | Method and device for measuring electronic part |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008116284A (en) * | 2006-11-02 | 2008-05-22 | Takeshi Kaneko | Contact probe and method of manufacturing contact probe |
| KR100953287B1 (en) | 2007-03-29 | 2010-04-20 | 엔이씨 일렉트로닉스 가부시키가이샤 | Semiconductor inspection device |
| JP2017172999A (en) * | 2016-03-18 | 2017-09-28 | ラピスセミコンダクタ株式会社 | probe |
| WO2021149668A1 (en) * | 2020-01-24 | 2021-07-29 | ミネベアミツミ株式会社 | Probe, measuring device, and measuring method |
| JP2021117085A (en) * | 2020-01-24 | 2021-08-10 | ミネベアミツミ株式会社 | Probes, measuring devices, and measuring methods |
| JP7586645B2 (en) | 2020-01-24 | 2024-11-19 | ミネベアミツミ株式会社 | Probe, measuring device, and measuring method |
| JP2024163285A (en) * | 2020-01-24 | 2024-11-21 | ミネベアミツミ株式会社 | Probe, measuring device, and measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2006068156A1 (en) | 2008-06-12 |
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