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WO2004007105A1 - Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur - Google Patents

Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur Download PDF

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Publication number
WO2004007105A1
WO2004007105A1 PCT/US2003/021641 US0321641W WO2004007105A1 WO 2004007105 A1 WO2004007105 A1 WO 2004007105A1 US 0321641 W US0321641 W US 0321641W WO 2004007105 A1 WO2004007105 A1 WO 2004007105A1
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WIPO (PCT)
Prior art keywords
process chamber
gas
reaction zone
introducing
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/US2003/021641
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English (en)
Inventor
Amir Torkaman
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ASML US Inc
Aviza Technology Inc
Original Assignee
ASML US Inc
Aviza Technology Inc
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Filing date
Publication date
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Priority to AU2003253873A priority Critical patent/AU2003253873A1/en
Publication of WO2004007105A1 publication Critical patent/WO2004007105A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements

Definitions

  • the present invention relates to semiconductor equipment and processing, and more particularly to apparatus and method for backfilling a semiconductor wafer processing chamber.
  • a variety of apparatus having process chambers are used in the manufacture of integrated circuits ("IC's") on semiconductor wafers.
  • the thermal processing of semiconductor wafers involves such processes as deposition, etching, heat treating, annealing, diffusion, and so forth, all of which are performed in process chambers.
  • Some processes such as etching and chemical vapor deposition (“CVD") are performed in process chambers under low pressure or vacuum conditions.
  • a process chamber is evacuated from an initial pressure to an operating pressure after the wafers are loaded and pushed into the process chamber.
  • the process chamber may initially be at atmospheric pressure for loading wafers, then evacuated to an operational pressure in the milli-torr range.
  • the initial evacuation cycle for a process is sometimes referred to as a "pump down and stabilize" cycle.
  • a "purge and cool” cycle is performed, followed by a “backfill and cool” cycle.
  • the pressure in the process chamber is increased from the operating pressure back to the initial pressure, for example, back to atmospheric pressure, to permit pulling the processed wafers from the process chamber.
  • the purge and backfill cycles are accomplished by injecting an inert gas such as nitrogen into the process chamber, the process chamber being brought to a desired pressure in the backfill cycle.
  • One embodiment of the invention is a semiconductor wafer processing apparatus comprising a process chamber for processing a batch of at least one semiconductor wafer; a gas injector comprising a substantially even annular distribution of gas injection sites for injecting gas into the process chamber about the wafer batch; and a cavity in flow communication with the gas injection sites; and a gas inlet port in flow communication with the cavity.
  • Another embodiment of the invention is a semiconductor wafer processing apparatus comprising a vertical process chamber; an annular and substantially even distribution of gas injection sites in vertical flow communication with the process chamber; a gas flow channel in flow communication with the gas injection sites; and a gas inlet port in flow communication with the gas flow channel.
  • Another embodiment of the invention is a method of backfilling a process chamber of a semiconductor wafer processing apparatus during a backfill cycle, comprising determining a maximal flow momentum which does not generate unacceptable particulate contamination in the process chamber; introducing an inert gas into the process chamber from a plurality of injection sites during the backfill cycle; and supplying the inert gas to the injection sites substantially at the maximal flow momentum throughout the backfill cycle so that pressure in the process chamber increases approximately by a second order polynomial with time.
  • Another embodiment of the invention is a method of backfilling a process chamber of a semiconductor wafer processing apparatus during a backfill cycle, comprising determining a maximal flow velocity which does not generate unacceptable particulate contamination in the process chamber; introducing an inert gas into the process chamber from a plurality of injection sites during the backfill cycle; and supplying the inert gas to the injection sites substantially at the maximal flow velocity throughout the backfill cycle so that pressure in the process chamber increases approximately exponentially with time.
  • Another embodiment of the invention is a method of backfilling a process chamber of a semiconductor wafer processing apparatus during a backfill cycle, comprising determining a maximal Reynolds 's Number which does not generate unacceptable particulate contamination in the process chamber; introducing an inert gas into the process chamber from a plurality of injection sites during the backfill cycle; and supplying the inert gas to the injection sites substantially at the maximal Reynolds' s Number throughout the backfill cycle so that pressure in the process chamber increases approximately linearly with time.
  • Another embodiment of the invention is a method of backfilling a process chamber, comprising determining a maximal flow velocity which does not generate particulate contamination in the process chamber; and introducing an inert gas into the process chamber substantially at the maximal flow velocity during the backfilling.
  • the introducing step comprises controlling mass flow rate through a conduit according to:
  • Another embodiment of the invention is a method of backfilling a process chamber, comprising determining a maximal flow momentum which does not generate particulate contamination in the process chamber; and introducing an inert gas into the process chamber substantially at the maximal flow momentum during the backfilling.
  • the introducing step comprises controlling mass flow rate through a conduit according to:
  • Another embodiment of the invention is a method of backfilling a process chamber, comprising determining a maximal Reynolds 's Number which does not generate particulate contamination in the process chamber; and introducing an inert gas into the process chamber substantially at the maximal Reynolds 's Number during the backfilling.
  • the introducing step comprises controlling mass flow rate through a conduit according to:
  • FIG. 1 is a cross sectional view of an illustrative thermal processing apparatus according to one embodiment of the present invention.
  • FIG. 2 is a perspective view of a plenum useful in the thermal processing apparatus shown in FIG. 1.
  • FIG. 3 is a cross sectional view of the plenum shown in FIG. 2.
  • FIG. 4 is a cross sectional view of an injector embodiment according to one example of the present invention.
  • FIG. 5 is a cross sectional view of another injector embodiment.
  • FIG. 6 is a cross sectional view of another injector embodiment.
  • FIG. 7 is a graph showing a multiple stage backfill pressure trajectory as obtained from a model prediction and experimentally.
  • FIG. 8 is a graph showing flow velocity and Reynold's number curves corresponding to the backfill pressure trajectory illustrated in FIG. 7.
  • FIG. 9 is a graph showing flow momentum curves corresponding to the backfill pressure trajectory illustrated in FIG. 7.
  • FIG. 10 is graph showing optimized backfill pressure trajectories as obtained by model prediction.
  • FIG. 11 is a graph showing optimized backfill flow trajectories corresponding to the backfill pressure trajectories illustrated in FIG. 10.
  • Described herein for use in semiconductor wafer processing apparatus are various novel backfill injectors that provide upflowing gas and have improved uniformity of distribution of gas into the perimeter of the process chamber, as well as suitably optimized backfill trajectories that avoid excessive injection velocity of the purge gas.
  • the backfill injectors and/or other types of injectors as well as the injection trajectories described herein significantly reduce processing cycle times and improve process uniformity.
  • FIG. 1 An illustrative thermal processing apparatus 100 having a generalized plenum 101 is shown in FIG. 1.
  • the thermal processing apparatus 100 has a vertical process chamber 102 enclosed within an outer tube 122 (illustratively a quartz bell jar) and the plenum 101 to which the outer tube 122 is hermetically sealed by suitable seals such as o-rings.
  • the outer tube 122 may be made of any material that is capable of withstanding thermal and mechanical stresses of high temperature and vacuum operation, and resistant to erosion from gas and vapor used or released during processing.
  • the outer tube 122 is made of quartz or silicon carbide.
  • the plenum 101 may be made of any material that is capable of withstanding thermal and mechanical stresses of high temperature and vacuum operation, and resistant to erosion from gas and vapor used or released during processing.
  • the plenum 101 is made of stainless steel or quartz.
  • An entrance is provided at the bottom of the process chamber 102 for conveying a carrier or boat 114 carrying a batch of wafers 116 into and out of the process chamber 102 on a movable pedestal 118. While the batch size may vary from one to about 200 wafers, an illustrative batch size is 25 product wafers, 3 monitor wafers, and 2 baffle wafers.
  • the pedestal 118 is hermetically sealed to the plenum 101 when in a raised position to form a closed process chamber 102.
  • the process chamber 102 includes an inner tube or liner 120 which is opened at the lower end and hermetically sealed to the plenum 101 by seals such as o-rings.
  • the liner 120 is also at least partially opened at its upper end.
  • the boat 114 carrying the wafers 116 is encompassed within the liner 120.
  • An annular passageway 124 is formed between the inner and outer tubes 120 and 122 for exhausting process and purge gases in a downward direction.
  • a plenum 104 having many of the features of the plenum 101 (FIG.
  • the plenum 104 is sized in a short cylindrical form with an outwardly extending upper flange 128, a sidewall 132, and an inwardly extending base 130.
  • the upper flange 128 is adapted to receive and support the outer tube 122, and contains an o-ring 126 to hermetically seal the outer tube 122 to the upper flange 128.
  • the base 130 is adapted to receive and support the liner 120, and includes an injector 106 mounted inside of where the liner 120 is supported.
  • the injector 106 uniformly introduces purge gas into the process chamber 102, and may if desired be used during processing to introduce a process gas into the process chamber 102.
  • the injector 106 is located so as to inject the purge gas into the part of the process chamber 102 between the boat 114 and the inner tube 120.
  • the plenum 104 includes various ports. Ports 138 and 139 are backfill/purge gas inlet ports. Port 134 is an exhaust port for exhausting gas from the reaction chamber 102. The exhaust port 134 is disposed in such a manner as to communicate with the annular passageway 124 formed between the inner and outer tubes 120 and 122, and is connect to a vacuum pipeline and a pump system (not shown). Ports 135 and 136 are provided to circulate cooling fluid in the plenum 104. Port 137 is a pressure port for monitoring pressure within the process chamber 102. Port 131 (mostly hidden by the exhaust port 134) and port 133 are vertical injector gas inlet ports. Port 103 (FIG. 1) is a three point profile thermocouple port.
  • the ports may be designed for a variety of gas flow rates, illustratively the injector ports 131 and 133 and the backfill/purge ports 138 and 139 are each capable of up to 10 standard liters per minute to aid in chamber back fill, chamber purge, and wafer cooling.
  • the backfill/purge ports 138 and 139 are provided at the sidewall 132 of the plenum 104 principally to introduce a gas from a supply (not shown) to the injector 106.
  • a mass flow controller (not shown) or any other suitable flow controller is placed in line between the gas supply and the port 133 to control the gas flow into the injector 106.
  • the injector 106 is useful for introducing a gas in an upflow configuration into the process chamber 102 to purge and cool the process chamber 102 as well as to backfill the process chamber 102 from a process operating pressure to atmospheric pressure.
  • the injector 106 may also be used to introduce a process gas in an up-flow configuration for processing semiconductor wafers, for example, in a CVD process.
  • the injector 106 includes a substantially annular flow channel 140
  • FIG. 3 a ring 143 into which are mounted a number of injector ports 144 substantially evenly distributed atop the flow channel 140.
  • the ring 143 into which are mounted a number of injector ports 144 substantially evenly distributed atop the flow channel 140.
  • a plurality of injector ports 144 is used to provide uniform introduction of gas into the process chamber 102. Any desired number of the injector ports may be used to achieve the intended purpose; for example, eight to twenty injectors are suitable for a thermal processing apparatus designed for processing a batch of about one to 200 semiconductor wafers.
  • the flow channel 140 is provided along the inner periphery 142 in the base 130 and is in flow communication with the backfill/purge gas inlet ports 138 and 139 for delivering gas to the injector ports 144 at an even pressure.
  • Two backfill/purge gas inlet ports are used because the flow channel 140 is not continuous in the area of the exhaust port 134, i.e. it does not extend under the exhaust port 134. If desired, a continuous flow channel may be used.
  • the flow channel 140 has a 13.74 inch inner diameter, a 14.364 inch outer diameter and a 0.5 inch depth.
  • the injector 106 may be made in any of various different ways to achieve the purpose of providing uniform introduction of gas into the process chamber 102.
  • plugs of porous materials such as sintered metals are used instead of the tubular orifices 144.
  • a plurality of openings are substantially evenly spaced atop the flow channel 140, and are of a diameter greater that the width of the flow channel 140 so that the sintered metal plugs can be counter fitted and supported in these openings.
  • the plugs can be either press fitted into the counter openings or welded into the openings.
  • the gas present in the flow channel 140 are injected from the plugs and uniformly introduced into the process chamber 102.
  • FIG. 4 through FIG. 6 Other embodiments using one or more continuous porous rings are shown in FIG. 4 through FIG. 6.
  • a continuous annular opening 150 provided atop the entire annular flow channel 140 is suitable.
  • the continuous opening 150 has a cross section with a greater width than that of the flow channel 140 so that the continuous ring or rings fits within and is supported within the opening 150.
  • the process or purge gas is injected from the continuous ring or rings and uniformly introduced into the process chamber 102.
  • the porous ring 145 is a single continuous ring made of sintered metal.
  • 2 micron grade sintered metal may be used with a width of 0.25 inches and a height of 0.5 inches.
  • the porous ring 146 is a continuous sintered metal ring welded onto a metal ring 147 provided with holes (not shown).
  • the ring 147 fits into and is supported within the opening 150, and gas flows from the flow channel through the holes in the ring 147 and into the sintered metal ring 146, which further disperses the gas.
  • the porous ring 149 is a continuous sintered metal ring welded onto opposing metal rings 148 and 151. Ring 151 is provided with holes (not shown) like metal ring 147, while ring 148 is continuous metal.
  • the ring 151 fits into and is supported within the opening 150, and gas flows from the flow channel through the holes in the ring 151 and into the sintered metal ring 149, which further disperses the gas.
  • the dispersed gas is constrained to exit the sintered metal ring 149 in a sidewise manner by the blocking presence of metal ring, but the gas thereafter turns upward to provide upflowing gas from the plenum 104 into the process chamber 102.
  • a single metal ring may be provided with a number of holes of a size selected to provide uniform introduction of gas into the process chamber 102.
  • the perforated ring is welded to the plenum 104. Any desired number of holes of any desired size may be used provided the intended purpose is achieved; illustratively, 11 holes each 0.015 inches in diameter may be placed in the ring.
  • Injector ports 131 and 133 are in flow communication respectively with two vertical injector tubes, one of which is shown in FIG. 1 by the reference numeral 156.
  • the vertical injector tube 156 is disposed between the boat 114 and the imier tube or liner 120, and is made of any suitable material such as quartz and is provided with many small holes 158 for uniformly distributing a process gas preferably in a cross flow configuration horizontally across the wafers 116 as described more fully in PCT Patent Application Serial No. TBD entitled "Thermal Processing System and Configurable Vertical Chamber,” which was filed on even date herewith under Attorney Docket No. FP-71748-PC, and which is incorporated herein in its entirety by reference thereto.
  • the injector ports 131 and 133 may also be used to supply a backfill/purge gas to the vertical injectors either in lieu of or to supplement the injection of backfill/purge gas from the injector ports 144.
  • a backfill/purge gas may be supplied to the vertical injectors either in lieu of or to supplement the injection of backfill/purge gas from the injector ports 144.
  • two vertical injector tubes are envisioned by the plenum 104, only one vertical injector or more that two vertical injectors may be used if desired.
  • the thermal processing apparatus 100 may also include heating elements 160 positioned proximately to the top, side and lower portion of the process chamber 102.
  • the heating elements 160 provides a good isothe ⁇ nal reaction zone for processing the wafers 116.
  • the arrangement of the heating elements 160 also maximizes the view factor of the wafers 116 since the heating elements 160 are disposed at the surface of the thermal insulation 162 and pedestal 118 outside of the process chamber 102.
  • An inverted quartz crucible 164 is provided to house the heating elements 160 embedded in the pedestal 118 to reduce or eliminate contamination.
  • the isothermal reaction zone is described more fully in PCT Patent Application Serial No. TBD entitled "Thermal Processing System and Configurable Vertical Chamber," which was filed on even date herewith under Attorney Docket No. FP-71748-PC, and which is incorporated herein in its entirety by reference thereto.
  • the thermal processing apparatus 100 may further include one or more optical or electrical temperature sensing elements 166 disposed between the imier and outer tubes 120 and 122 for monitoring the temperature within the process chamber 102 and/or controlling operation of the heating elements 160.
  • the temperature sensing elements 166 can be a resistance temperature device ("RTD”) or profile thermal couple (“T/C”) having multiple independent temperature sensing nodes or points for detecting the temperature at multiple locations within the process chamber 102.
  • a method of fast backfilling a process chamber without generating unacceptable particulate contamination is now described. Once a process such as etching or CVD deposition is completed, the pressure of the process chamber is adjusted to the ambient pressure so that the processed wafers may be pushed from the chamber, or to an intermediate pressure for further treatment. It is desirable to have the backfill process complete as quickly as possible in order to achieve minimum overall cycle times during the manufacturing process, although the manner of introducing the purge gas and the velocity of the purge gas should not be so great as to disturb particles and thereby generate unacceptable levels of particulate contamination. Some backfill processes take as much as 25 minutes or more, and an example of such a process is described below. By comparison, a fast backfill process is described below that brings the process chamber from about 200 millitorr to about 760 torr in less than about 8 minutes.
  • particulate contamination typically results mainly from three areas wherein films or particles are most likely to be deposited or formed in known types of thermal wafer processing apparatus during processing.
  • the first area is where gas is injected into the chamber, which in some types of thermal wafer processing apparatus known in the art is through a single nozzle.
  • the problem in this area is significantly reduced by distributing the injection of purge gas into the process chamber 102 over many injection sites, as described above for various embodiments. This approach allows for a greater total flow rate without having an excessive flow rate from any one of the distributed sites of gas injection.
  • the second area is at the plenum where the purge gas flow inside the plenum of some types of thermal wafer processing apparatus l ⁇ iown in the art has a significant horizontal component.
  • the problem in this area also is significantly reduced by distributing the injection of purge gas into the process chamber 102 so that gas flow is primarily in an upflow direction, as described above for various embodiments.
  • the third area is in the process chamber itself where the purge gas flows vertically at the plenum, between the wafers and the liner wall, and between the wafers.
  • Re is the Reynold's Number
  • p fluid density
  • V flow velocity
  • 1 critical length
  • ⁇ flow viscosity.
  • flow velocity or “V” refers to the average speed at which an effluent stream travels through the cross sectional area of a duct, and is typically measured in meters per second (m/s) or feet per minute (fpm).
  • flow momentum is defined as the product of the mass flow rate and the flow velocity.
  • the pressure of the chamber is related to the temperature and gas flow rate according to the following equation:
  • dP/dt RT/ ⁇ - m (2) wherein m is equal to dm/dt.
  • the mass flow rate of a purge gas also is related to the velocity of the gas flow, pressure and temperature of the chamber according to the following equation:
  • A is the area of a cross section
  • V is the velocity of the gas flow through that cross section
  • p is the density that is related to the pressure and temperature according to the following equation:
  • P 0 is the initial pressure of the chamber
  • R, T, N, m and t are defined as above.
  • the initial pressure is in a milli-torr range for a CND process.
  • the entire backfill process may be divided into one or more stages, and the mass flow rate can be varied between stages but is constant within each of the stages.
  • FIG. 7 shows a backfill pressure trajectory according to this model, along with experimental data from the known type of thermal wafer processing apparatus.
  • the entire purge process is carried out in three stages to backfill the process chamber from vacuum to the atmospheric pressure.
  • the flow rate is controlled substantially constant at about 1.175L/min.
  • the Reynolds number at the nozzle is about 59, at the plenum about 5.1, and within the chamber about 1.8.
  • the pressure of the chamber linearly increases from 0 to about 100 torr.
  • the mass flow rate is controlled substantially constant at about 8.175L/min.
  • the Reynolds number at the nozzle is about 409, at the plenum about 35.6, and within the chamber about 12.50.
  • the pressure of the chamber linearly increases from about 100 to about 750 torr in ten minutes.
  • the mass flow rate is controlled substantially constantly at about 0.615L/min.
  • the Reynolds number at the nozzle is about 33, at the plenum about 3, and within the chamber about 1.0. The pressure linearly increases from about 750 to 760 torr.
  • FIG. 8 shows flow velocity curves and FIG. 9 shows flow momentum curves during the backfill process according to this first model in which the mass flow rate is kept constant within each stage but is varied from stage to stage.
  • curve 800 represents the plenum velocity
  • curve 802 represents the nozzle velocity
  • curve 804 represents the chamber velocity
  • curve 900 represents the plenum velocity
  • curve 902 represents the nozzle velocity
  • curve 904 represents the chamber velocity. Both the flow velocity and flow momentum drop exponentially during each of the three stages.
  • mass flow rate is maintained constant by controllably varying the mass flow rate through a controller disposed between a gas supply and the purge gas injector(s).
  • mass flow rate may be expressed by the following equation:
  • the maximal flow velocity is defined as a velocity above which particulate contamination will be generated. It is desirably to optimized the backfill process by using maximum flow velocity to achieve minimum overall cycle time for the manufacturing process without generating particulate contamination.
  • the maximal flow velocity is determined experimentally using routine techniques.
  • the mass flow controller may be realized with a microprocessor and programmable memory that is programmable to achieve a desired operation mode for the controller.
  • the mass flow controller is programmed according to equation (7), i.e., the mass flow rate increases exponentially with time.
  • the maximal flow velocity is maintained constant during the entire backfill process, and the chamber pressure increases exponentially with time according to equation (6).
  • FIG. 10 shows a backfill chamber pressure trajectory curve 1000 according to the second model where the flow velocity is assumed constant during the entire backfill process.
  • the flow velocity is assumed constant during the entire backfill process.
  • the very fast vent up of the chamber It takes only about six minutes to backfill the chamber from near 0 to about 760 torr.
  • the second model may also be used to generate an optimized backfill pressure trajectory for the wafer processing apparatus, including the thermal wafer processing apparatus shown in FIG. 1 and FIG. 2, using an assumption that the purge gas is introduced into the chamber at a substantially constant flow momentum. Derived from the ideal gas law, when the flow momentum is kept constant during the backfill process, the change in pressure of the chamber follows the following equation:
  • mass flow rate is maintained constant by controllably varying the mass flow rate through a controller disposed between a gas supply and "the purge gas injector(s).
  • mass flow rate may be expressed by the following equation:
  • the maximal flow momentum can be determined experimentally using routine techniques. Once the value of the maximal flow momentum is determined, the mass flow controller is programmed according to equation (9), i.e., the mass flow rate increase linearly with time. When the mass flow controller operates according to the desired mode, the flow momentum is maintained constant during the entire backfill process, and the chamber pressure increases by a second order polynomial with time according to equation (8).
  • FIG. 10 also shows a backfill chamber pressure trajectory curve 1002 according to this model where the flow momentum is assumed constant during the entire backfill process.
  • the fast vent up of the chamber It takes only about eight minutes to backfill the chamber from 0 to about 760 torr.
  • the mass flow controller is programmed accordingly.
  • the mass flow controller operates according to the backfill chamber pressure trajectory curve 1002, i.e. is programmed substantially according to equation (9)
  • the flow momentum is maintained constant during the entire backfill process, and the chamber pressure increases approximately by the second order polynomial with time according to equation (8).
  • the mass flow controller may be operated approximately according to the backfill chamber pressure trajectory curve 1000, i.e. is programmed substantially according to equation (7), whereby the maximal flow velocity is maintained constant during the entire backfill process, and the chamber pressure increases approximately exponentially with time according to equation (6).
  • FIG. 10 also shows a suggested optimal backfill chamber pressure trajectory curve 1004 according to this model for a constant flow momentum.
  • the chamber Reynolds Number for the suggested optimal backfill chamber pressure trajectory curve 1004 is 30.
  • the chamber Reynolds Number for the backfill chamber pressure trajectory curve 1006, which corresponds to the curve of FIG. 7, is 12.
  • the suggested optimal backfill chamber pressure trajectory curve 1004 is somewhat conservative, being just slightly to the right of the backfill chamber pressure trajectory curve 1002 and much more to the right of the backfill chamber pressure trajectory curve 1000. Operation at the suggested optimal backfill chamber pressure trajectory curve 1004 is a very good compromise of high speed and low particulate contamination. However, one may operate exactly at the backfill chamber pressure trajectory curve 1002 or even up to the backfill chamber pressure trajectory curve 1000 if desired.
  • FIG. 11 plots the corresponding mass flow rates of the optimal pressure curves presented in FIG 10.
  • the mass flow controller would be programmed according to these charts to achieve the optimal backfill chamber pressure trajectories.
  • the exponential curve 1008 corresponds to curve 1000 of FIG. 10 and equation (7), which assumes a constant flow velocity throughout the backfill cycle.
  • the linear curve 1010 corresponds to curve 1002 and equation (9), which assumes a constant flow momentum throughout the backfill cycle.
  • the curve shown in solid lines 1012 corresponds to the suggested optimized backfill pressure trajectory curve 1004.
  • the curve 1004 is more conservative than 1000 and 1002, and it assumes a constant mass flow rate at different times throughout the cycle which is achieved by simply changing the set-point of a mass flow controller without any programming.

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Abstract

L'invention concerne divers injecteurs de remplissage fournissant un gaz ascendant et possédant une uniformité de répartition du gaz amélioré dans le périmètre de la chambre de traitement, ces injecteurs étant utilisés dans un appareil de traitement de plaquette à semiconducteur. Des trajectoires de remplissage optimisées de façon appropriée empêchant une vitesse d'injection excessive du gaz de purge. Les injecteurs de remplissage et/ou d'autres types d'injecteur, ainsi que les trajectoires d'injection optimisées permettent de réduire de façon significative le temps du cycle de traitement et améliorent l'uniformité de traitement.
PCT/US2003/021641 2002-07-15 2003-07-10 Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur Ceased WO2004007105A1 (fr)

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PCT/US2003/021647 Ceased WO2004008494A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de commande de servomoteurs dans un environnement de fabrication de semi-conducteurs
PCT/US2003/021641 Ceased WO2004007105A1 (fr) 2002-07-15 2003-07-10 Appareil et procede de remplissage d'une chambre de traitement de plaquette a semiconducteur
PCT/US2003/021645 Ceased WO2004008052A2 (fr) 2002-07-15 2003-07-10 Systeme et procede de refroidissement d'un appareil de traitement thermique
PCT/US2003/021648 Ceased WO2004008054A1 (fr) 2002-07-15 2003-07-10 Element chauffant variable destine a des gammes de temperatures basses a elevees
PCT/US2003/021575 Ceased WO2004008491A2 (fr) 2002-07-15 2003-07-10 Systeme de traitement thermique et chambre verticale configurable
PCT/US2003/021642 Ceased WO2004008493A2 (fr) 2002-07-15 2003-07-10 Procede et appareil destines a supporter des plaquettes a semiconducteur
PCT/US2003/021644 Ceased WO2004007800A1 (fr) 2002-07-15 2003-07-10 Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement
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PCT/US2003/021575 Ceased WO2004008491A2 (fr) 2002-07-15 2003-07-10 Systeme de traitement thermique et chambre verticale configurable
PCT/US2003/021642 Ceased WO2004008493A2 (fr) 2002-07-15 2003-07-10 Procede et appareil destines a supporter des plaquettes a semiconducteur
PCT/US2003/021644 Ceased WO2004007800A1 (fr) 2002-07-15 2003-07-10 Appareil de traitement thermique et procede d'evacuation d'une chambre de traitement
PCT/US2003/021973 Ceased WO2004007318A2 (fr) 2002-07-15 2003-07-15 Appareil de port de chargement et son procede d'utilisation

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