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WO2003018870A3 - Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung - Google Patents

Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung Download PDF

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Publication number
WO2003018870A3
WO2003018870A3 PCT/DE2002/003131 DE0203131W WO03018870A3 WO 2003018870 A3 WO2003018870 A3 WO 2003018870A3 DE 0203131 W DE0203131 W DE 0203131W WO 03018870 A3 WO03018870 A3 WO 03018870A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
area
plasma source
substrates
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/003131
Other languages
English (en)
French (fr)
Other versions
WO2003018870A2 (de
Inventor
Hans-Ulrich Poll
Dietmar Roth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Roth and Rau Oberflaechentechnik
Original Assignee
Roth and Rau Oberflaechentechnik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth and Rau Oberflaechentechnik filed Critical Roth and Rau Oberflaechentechnik
Priority to EP02760136A priority Critical patent/EP1421227A2/de
Publication of WO2003018870A2 publication Critical patent/WO2003018870A2/de
Publication of WO2003018870A3 publication Critical patent/WO2003018870A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft eine Einrichtung zur reaktiven Plasmabehandlung von Substraten (4), bestehend aus einer Vakuumkammer (1) mit mindestens einer Substratanordnung, einer Plasmaquelle, z.B. einer Hochfrequenz-Plasmaquelle mit flächigen Elektroden (8, 9), einem Reaktivgaseinlass (15) und einer Substrat-Heizeinrichtung. Die Vakuumkammer (1) besteht aus einem ersten Raum (6) und einem zweiten Raum (7), die mittels einer Trennwand aus Glas oder Keramik voneinander getrennt sind. Im ersten Raum (6) sind die Substratanordnung sowie der Reaktivgaseinlass (15) und im zweiten Raum (7) die Elektroden (8, 9) der Plasmaquelle und die Substrat-Heizeinrichtung angeordnet. Die Substratanordnung und die Elektroden (8, 9) der Plasmaquelle können parallel zueinander angeordnet sein. Weiterhin betrifft die Erfindung ein Verfahren zur Anwendung einer Einrichtung. Dabei wird mindestens ein Substrat (4) als Substratanordnung in den ersten Raum (6) der Vakuumkammer (1) eingebracht, die Vakuumkammer (1) evakuiert, das Substrat (4) mittels der Substrat-Heizeinrichtung auf eine technologisch vorgegebene Temperatur aufgeheizt und in der Folge zur Abscheidung einer Beschichtung auf dem Substrat (4) oder zur Oberflächenbehandlung der Substrate (4) mittels der Plasmaquelle im ersten Raum (6) ein Plasma erzeugt und ein Reaktivgas eingelassen.
PCT/DE2002/003131 2001-08-24 2002-08-23 Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung Ceased WO2003018870A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP02760136A EP1421227A2 (de) 2001-08-24 2002-08-23 Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10141142.1 2001-08-24
DE2001141142 DE10141142B4 (de) 2001-08-24 2001-08-24 Einrichtung zur reaktiven Plasmabehandlung von Substraten und Verfahren zur Anwendung

Publications (2)

Publication Number Publication Date
WO2003018870A2 WO2003018870A2 (de) 2003-03-06
WO2003018870A3 true WO2003018870A3 (de) 2003-05-22

Family

ID=7696245

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/003131 Ceased WO2003018870A2 (de) 2001-08-24 2002-08-23 Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung

Country Status (3)

Country Link
EP (1) EP1421227A2 (de)
DE (1) DE10141142B4 (de)
WO (1) WO2003018870A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110124144A1 (en) * 2009-03-17 2011-05-26 Roth & Rau Ag Substrate processing system and substrate processing method
DE102010060910A1 (de) * 2010-11-30 2012-05-31 Roth & Rau Ag Verfahren und Vorrichtung zur Ionenimplantation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6244574A (ja) * 1985-08-20 1987-02-26 Fujitsu Ltd 化学気相成長方法
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JPH04325687A (ja) * 1991-04-26 1992-11-16 Nippon Seisan Gijutsu Kenkyusho:Kk ライン式プラズマｃｖｄ装置
US5976258A (en) * 1998-02-05 1999-11-02 Semiconductor Equipment Group, Llc High temperature substrate transfer module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
DE19853121C1 (de) * 1998-11-18 2000-02-24 Poll Hans Ulrich Verfahren und Einrichtung zur Behandlung eines Substrates in einem Hochfrequenzplasma und Anwendung der Einrichtung
EP1020892B1 (de) * 1999-01-14 2004-08-18 Vlaamse Instelling Voor Technologisch Onderzoek (Vito) Vorrichtung zum Aufbringen von Beschichtungen auf ein Substrat durch eine induktiv-angekoppelte magnetisch-begrenzte Plasmaquelle
DE19955671B4 (de) * 1999-11-19 2004-07-22 Muegge Electronic Gmbh Vorrichtung zur Erzeugung von Plasma

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6244574A (ja) * 1985-08-20 1987-02-26 Fujitsu Ltd 化学気相成長方法
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JPH04325687A (ja) * 1991-04-26 1992-11-16 Nippon Seisan Gijutsu Kenkyusho:Kk ライン式プラズマｃｖｄ装置
US5976258A (en) * 1998-02-05 1999-11-02 Semiconductor Equipment Group, Llc High temperature substrate transfer module

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 232 (C - 437) 29 July 1987 (1987-07-29) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 167 (C - 1043) 31 March 1993 (1993-03-31) *

Also Published As

Publication number Publication date
DE10141142A1 (de) 2003-03-27
WO2003018870A2 (de) 2003-03-06
EP1421227A2 (de) 2004-05-26
DE10141142B4 (de) 2004-11-11

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