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WO2005033358A3 - Verfahren zur abscheidung eines leitfähigen materials auf einem substrat und halbleiterkontaktvorrichtung - Google Patents

Verfahren zur abscheidung eines leitfähigen materials auf einem substrat und halbleiterkontaktvorrichtung Download PDF

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Publication number
WO2005033358A3
WO2005033358A3 PCT/EP2004/010892 EP2004010892W WO2005033358A3 WO 2005033358 A3 WO2005033358 A3 WO 2005033358A3 EP 2004010892 W EP2004010892 W EP 2004010892W WO 2005033358 A3 WO2005033358 A3 WO 2005033358A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
depositing
contact device
semiconductor contact
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2004/010892
Other languages
English (en)
French (fr)
Other versions
WO2005033358A2 (de
Inventor
Martin Gutsche
Franz Kreupl
Werner Pamler
Robert Seidel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of WO2005033358A2 publication Critical patent/WO2005033358A2/de
Publication of WO2005033358A3 publication Critical patent/WO2005033358A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die vorliegende Erfindung stellt ein Verfahren zur Abscheidung eines Kohlenstoffmaterials (17) in oder auf einem Substrat (14) mit den Schritten bereit: Erhitzen des Innenraums (10') einer Prozesskammer (10) auf eine vorbestimmte Temperatur; Einbringen des Substrats (14) in die Prozesskammer (10); Evakuieren der Prozesskammer (10) auf einen ersten vorbestimmten Druck oder darunter; Einleiten eines Gases (12), welches zumindest Kohlenstoff aufweist, bis ein zweiter vorbestimmter Druck erreicht ist, welcher höher als der erste vorbestimmte Druck ist; und Abscheiden des Kohlenstoffmaterials (17) auf einer Oberfläche oder in einer Ausnehmung (15) aus dem Gas (12), welches Kohlenstoff enthält. Die vorliegende Erfindung stellt ebenfalls eine Halbleiterkontakteinrichtung bereit.
PCT/EP2004/010892 2003-09-30 2004-09-29 Verfahren zur abscheidung eines leitfähigen materials auf einem substrat und halbleiterkontaktvorrichtung Ceased WO2005033358A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10345393A DE10345393B4 (de) 2003-09-30 2003-09-30 Verfahren zur Abscheidung eines leitfähigen Materials auf einem Substrat und Halbleiterkontaktvorrichtung
DE10345393.8 2003-09-30

Publications (2)

Publication Number Publication Date
WO2005033358A2 WO2005033358A2 (de) 2005-04-14
WO2005033358A3 true WO2005033358A3 (de) 2005-07-21

Family

ID=34399072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/010892 Ceased WO2005033358A2 (de) 2003-09-30 2004-09-29 Verfahren zur abscheidung eines leitfähigen materials auf einem substrat und halbleiterkontaktvorrichtung

Country Status (2)

Country Link
DE (1) DE10345393B4 (de)
WO (1) WO2005033358A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005056262A1 (de) 2005-11-25 2007-05-31 Infineon Technologies Ag Verfahren zum Herstellen einer Schichtanordnung, Verfahren zum Herstellen eines elektrischen Bauelementes, Schichtanordnung und elektrisches Bauelement
US8216639B2 (en) * 2005-12-16 2012-07-10 Qimonda Ag Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers
DE102006004218B3 (de) * 2006-01-30 2007-08-16 Infineon Technologies Ag Elektromechanische Speicher-Einrichtung und Verfahren zum Herstellen einer elektromechanischen Speicher-Einrichtung
US8030637B2 (en) 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US20080102278A1 (en) 2006-10-27 2008-05-01 Franz Kreupl Carbon filament memory and method for fabrication
US7915603B2 (en) 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
US20080296674A1 (en) * 2007-05-30 2008-12-04 Qimonda Ag Transistor, integrated circuit and method of forming an integrated circuit
US7935634B2 (en) 2007-08-16 2011-05-03 Qimonda Ag Integrated circuits, micromechanical devices, and method of making same
US7768016B2 (en) 2008-02-11 2010-08-03 Qimonda Ag Carbon diode array for resistivity changing memories
US8912654B2 (en) * 2008-04-11 2014-12-16 Qimonda Ag Semiconductor chip with integrated via
US7978504B2 (en) 2008-06-03 2011-07-12 Infineon Technologies Ag Floating gate device with graphite floating gate
DE102008044985B4 (de) 2008-08-29 2010-08-12 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines Halbleiterbauelements mit einem kohlenstoffenthaltenden leitenden Material für Durchgangskontakte

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296409A1 (de) * 1987-06-22 1988-12-28 General Electric Company Verfahren zur Herstellung von reflektierendem, pyrolytischem Graphit
WO2002059392A1 (de) * 2001-01-25 2002-08-01 Infineon Technologies Ag Verfahren zum wachsen von kohlenstoff-nanoröhren oberhalb einer elektrisch zu kontaktierenden unterlage sowie bauelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0327336B1 (de) * 1988-02-01 1997-12-10 Semiconductor Energy Laboratory Co., Ltd. Elektronische Anordnungen mit Kohlenstoffschichten
JP3194820B2 (ja) * 1992-09-03 2001-08-06 株式会社神戸製鋼所 配向性ダイヤモンド膜の形成方法
JP3031301B2 (ja) * 1997-06-25 2000-04-10 日本電気株式会社 銅配線構造およびその製造方法
DE19856295C2 (de) * 1998-02-27 2002-06-20 Fraunhofer Ges Forschung Verfahren zur Herstellung von Kohlenstoffelektroden und chemischen Feldeffektransistoren sowie dadurch hergestellte Kohlenstoffelektroden und chemische Feldeffektransistoren und deren Verwendung
DE10136400B4 (de) * 2001-07-26 2006-01-05 Infineon Technologies Ag Verfahren zur Herstellung einer Metallkarbidschicht und Verfahren zur Herstellung eines Grabenkondensators

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296409A1 (de) * 1987-06-22 1988-12-28 General Electric Company Verfahren zur Herstellung von reflektierendem, pyrolytischem Graphit
WO2002059392A1 (de) * 2001-01-25 2002-08-01 Infineon Technologies Ag Verfahren zum wachsen von kohlenstoff-nanoröhren oberhalb einer elektrisch zu kontaktierenden unterlage sowie bauelement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RAGHAVAN G ET AL: "POLYCRYSTALLINE CARBON: A NOVEL MATERIAL FOR GATE ELECTRODES IN MOSTECHNOLOGY", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 32, no. 1B, PART 1, January 1993 (1993-01-01), pages 380 - 383, XP000418034, ISSN: 0021-4922 *

Also Published As

Publication number Publication date
DE10345393A1 (de) 2005-05-19
WO2005033358A2 (de) 2005-04-14
DE10345393B4 (de) 2007-07-19

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