[go: up one dir, main page]

WO2003009325A1 - Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same - Google Patents

Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same Download PDF

Info

Publication number
WO2003009325A1
WO2003009325A1 PCT/JP2002/007290 JP0207290W WO03009325A1 WO 2003009325 A1 WO2003009325 A1 WO 2003009325A1 JP 0207290 W JP0207290 W JP 0207290W WO 03009325 A1 WO03009325 A1 WO 03009325A1
Authority
WO
WIPO (PCT)
Prior art keywords
same
fabricating
cold cathode
cathode field
electron emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/007290
Other languages
English (en)
French (fr)
Inventor
Takao Yagi
Toshiki Shimamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to KR1020037016760A priority Critical patent/KR100877624B1/ko
Priority to EP02753190A priority patent/EP1408525A4/en
Priority to US10/479,408 priority patent/US20040169151A1/en
Publication of WO2003009325A1 publication Critical patent/WO2003009325A1/ja
Anticipated expiration legal-status Critical
Priority to US11/730,982 priority patent/US20070196564A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
PCT/JP2002/007290 2001-07-18 2002-07-18 Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same Ceased WO2003009325A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020037016760A KR100877624B1 (ko) 2001-07-18 2002-07-18 전자방출체의 제조방법, 냉음극 전계 전자방출소자의 제조방법 및 냉음극 전계 전자방출 표시장치의 제조방법
EP02753190A EP1408525A4 (en) 2001-07-18 2002-07-18 ELECTRONIC MIXTURE AND METHOD FOR THE PRODUCTION THEREOF, COLD CATHODEELECTRONIC EMISSION ELEMENT AND METHOD FOR THE PRODUCTION THEREOF AND COLD CATHODEELECTRONIC EMISSION PRESENTATION AND METHOD FOR THE PRODUCTION THEREOF
US10/479,408 US20040169151A1 (en) 2001-07-18 2002-07-18 Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same
US11/730,982 US20070196564A1 (en) 2001-07-18 2007-04-05 Electron emitting member and manufacturing method thereof, cold cathode field emission device and manufacturing method thereof

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2001-218624 2001-07-18
JP2001218624 2001-07-18
JP2001366098 2001-11-30
JP2001-366098 2001-11-30
JP2002208625A JP3632682B2 (ja) 2001-07-18 2002-07-17 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
JP2002-208625 2002-07-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/730,982 Continuation US20070196564A1 (en) 2001-07-18 2007-04-05 Electron emitting member and manufacturing method thereof, cold cathode field emission device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2003009325A1 true WO2003009325A1 (en) 2003-01-30

Family

ID=27347183

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/007290 Ceased WO2003009325A1 (en) 2001-07-18 2002-07-18 Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same

Country Status (6)

Country Link
US (2) US20040169151A1 (ja)
EP (1) EP1408525A4 (ja)
JP (1) JP3632682B2 (ja)
KR (1) KR100877624B1 (ja)
CN (1) CN100474482C (ja)
WO (1) WO2003009325A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473327A (zh) * 2018-11-21 2019-03-15 金陵科技学院 层叠双雁翅空环尖体阴极坡浪混合线门控结构的发光显示器
WO2022092425A1 (ko) * 2020-10-28 2022-05-05 숭실대학교산학협력단 구조적 안정성이 향상된 탄소나노튜브 시트 롤 이미터, 이의 제조방법 및 이를 이용한 전계 방출 소자

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6723299B1 (en) 2001-05-17 2004-04-20 Zyvex Corporation System and method for manipulating nanotubes
US7854861B2 (en) 2001-10-19 2010-12-21 Applied Nanotech Holdings, Inc. Well formation
US7842522B2 (en) 2001-10-19 2010-11-30 Applied Nanotech Holdings, Inc. Well formation
JP2003168355A (ja) * 2001-11-30 2003-06-13 Sony Corp 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法
US20040034177A1 (en) 2002-05-02 2004-02-19 Jian Chen Polymer and method for using the polymer for solubilizing nanotubes
US6905667B1 (en) 2002-05-02 2005-06-14 Zyvex Corporation Polymer and method for using the polymer for noncovalently functionalizing nanotubes
US7247980B2 (en) 2002-08-04 2007-07-24 Iljin Idamond Co., Ltd Emitter composition using diamond, method of manufacturing the same and field emission cell using the same
KR100932974B1 (ko) * 2003-04-08 2009-12-21 삼성에스디아이 주식회사 전자 방출용 카본계 복합입자의 제조방법
DE10320838B4 (de) * 2003-05-08 2014-11-06 Rogers Germany Gmbh Faserverstärktes Metall-Keramik/Glas-Verbundmaterial als Substrat für elektrische Anwendungen, Verfahren zum Herstellen eines derartigen Verbundmaterials sowie Verwendung dieses Verbundmaterials
CN1813023A (zh) 2003-05-22 2006-08-02 塞威公司 纳米复合材料和生产方法
KR100545354B1 (ko) * 2003-08-04 2006-01-24 일진다이아몬드(주) 다이아몬드를 이용한 전계방출소자의 에미터 조성물, 그 제조 방법 및 에미터 조성물을 이용한 전계방출소자
KR100523840B1 (ko) 2003-08-27 2005-10-27 한국전자통신연구원 전계 방출 소자
US7452735B2 (en) 2003-09-12 2008-11-18 Applied Nanotech Holdings, Inc. Carbon nanotube deposition with a stencil
US7118440B2 (en) * 2004-01-09 2006-10-10 Teco Nanotech Co., Ltd. Spray with carbon nanotubes and method to spray the same
KR101017037B1 (ko) 2004-02-26 2011-02-23 삼성에스디아이 주식회사 전자 방출 표시장치
CN100405523C (zh) 2004-04-23 2008-07-23 清华大学 场发射显示器
KR20050104643A (ko) * 2004-04-29 2005-11-03 삼성에스디아이 주식회사 전자 방출 표시장치용 캐소드 기판, 전자 방출 표시장치및 이의 제조 방법
KR20050111708A (ko) * 2004-05-22 2005-11-28 삼성에스디아이 주식회사 전계방출 표시장치 및 그 제조방법
US20060006780A1 (en) * 2004-07-06 2006-01-12 Chun-Yen Hsiao Electron emission source of field emission display and method for making the same
US7296576B2 (en) 2004-08-18 2007-11-20 Zyvex Performance Materials, Llc Polymers for enhanced solubility of nanomaterials, compositions and methods therefor
JP5410648B2 (ja) * 2004-08-26 2014-02-05 株式会社ピュアロンジャパン 表示パネルおよび該表示パネルに用いる発光ユニット
KR101536669B1 (ko) * 2004-11-09 2015-07-15 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 나노섬유 리본과 시트 및 트위스팅 및 논-트위스팅 나노섬유 방적사의 제조 및 애플리케이션
KR20060081109A (ko) * 2005-01-07 2006-07-12 삼성에스디아이 주식회사 전계방출 표시장치
CN100446155C (zh) * 2005-02-07 2008-12-24 中山大学 可印制的纳米材料冷阴极浆料及其场发射冷阴极的制备方法和应用
JP2006261108A (ja) * 2005-02-17 2006-09-28 Sonac Kk 冷陰極電子源、その製造方法ならびに表示装置
KR20060095318A (ko) * 2005-02-28 2006-08-31 삼성에스디아이 주식회사 전자 방출 소자와 이의 제조 방법
JP5054896B2 (ja) * 2005-03-28 2012-10-24 勝 堀 カーボンナノウォールの処理方法、カーボンナノウォール、カーボンナノウォールデバイス
JP2006318702A (ja) * 2005-05-11 2006-11-24 Mitsubishi Electric Corp 電子放出源の製造方法
JP2006324209A (ja) * 2005-05-20 2006-11-30 Nippon Hoso Kyokai <Nhk> 冷陰極素子の製造方法
KR20070010660A (ko) * 2005-07-19 2007-01-24 삼성에스디아이 주식회사 전자 방출 소자 및 이를 구비한 평판 디스플레이 장치
KR20070011804A (ko) * 2005-07-21 2007-01-25 삼성에스디아이 주식회사 전자 방출 소자 및 이를 구비한 평판 디스플레이 장치
US20070096621A1 (en) * 2005-10-31 2007-05-03 Sang-Ho Jeon Electron emission display
KR100732845B1 (ko) * 2005-11-17 2007-06-27 이승호 카본 나노튜브를 활용한 ｔｆｔ-ｌｃｄ용 평면 발광 소자
US7713858B2 (en) * 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
KR100803210B1 (ko) * 2006-04-07 2008-02-14 삼성전자주식회사 탄소나노튜브를 이용한 전계 방출 전극 및 그 제조방법
WO2007139271A1 (en) * 2006-05-26 2007-12-06 Korea Advanced Institute Of Science And Technology Method for manufacturing a field emitter electrode using the array of carbon nanotubes
US7393699B2 (en) 2006-06-12 2008-07-01 Tran Bao Q NANO-electronics
JP4875432B2 (ja) * 2006-08-01 2012-02-15 日本放送協会 冷陰極素子の製造方法及びこれを用いた冷陰極素子
EP2152788B1 (en) 2007-05-29 2019-08-21 Tpk Holding Co., Ltd Surfaces having particles and related methods
US7629593B2 (en) * 2007-06-28 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, radiation system, device manufacturing method, and radiation generating method
JP2010027743A (ja) * 2008-07-16 2010-02-04 Ebara Corp インプリント用ガラス基板、レジストパターン形成方法、インプリント用ガラス基板の検査方法及び検査装置
WO2010022353A1 (en) 2008-08-21 2010-02-25 Innova Meterials, Llc Enhanced surfaces, coatings, and related methods
US8022791B2 (en) 2008-12-03 2011-09-20 Electronics And Telecommunications Research Institute Radio frequency device comprising a vibratile carbon nanotube and a vibratile tuning electrode
KR101518380B1 (ko) * 2008-12-26 2015-05-11 삼성전자주식회사 전계방출소자 및 그 제조방법
JP5574264B2 (ja) * 2009-02-10 2014-08-20 日本ゼオン株式会社 カーボンナノチューブ配向集合体生産用基材及びカーボンナノチューブ配向集合体の製造方法
US20100285715A1 (en) * 2009-05-08 2010-11-11 Yuan-Yao Li Method of manufacturing carbon nanotube (cnt) field emission source
CN102262988A (zh) * 2010-05-31 2011-11-30 海洋王照明科技股份有限公司 碳纳米管冷阴极的制造方法及其应用
AU2011289620C1 (en) 2010-08-07 2014-08-21 Tpk Holding Co., Ltd. Device components with surface-embedded additives and related manufacturing methods
CN102452648B (zh) * 2010-10-27 2013-09-25 北京富纳特创新科技有限公司 碳纳米管膜承载结构及其使用方法
WO2013003638A2 (en) 2011-06-28 2013-01-03 Arjun Daniel Srinivas Transparent conductors incorporating additives and related manufacturing methods
EP3739598B1 (en) 2011-08-24 2023-12-06 Tpk Holding Co., Ltd Patterned transparent conductors and related manufacturing methods
JP5926709B2 (ja) * 2012-08-29 2016-05-25 国立大学法人東北大学 電界電子放出膜、電界電子放出素子、発光素子およびそれらの製造方法
JP5973513B2 (ja) * 2014-09-17 2016-08-23 株式会社フジクラ イオンフィルターの製造方法
CN106158551B (zh) * 2016-07-08 2017-11-21 中山大学 自对准聚焦结构的纳米线冷阴极电子源阵列及其制作方法
DE102016013279A1 (de) * 2016-11-08 2018-05-09 H&P Advanced Technology GmbH Verfahren zur Herstellung eines Elektronenemitters mit einer Kohlenstoffnanoröhren enthaltenden Beschichtung
CN120034635B (zh) * 2025-02-18 2025-07-25 北京光合声智能科技有限公司 一种基于分区光源的投影装置及方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196086A (ja) * 1992-12-22 1994-07-15 Mitsubishi Electric Corp 電界放出陰極及びその形成方法
JP2000090809A (ja) * 1998-09-09 2000-03-31 Toshiba Corp 電界放出陰極、電子放出素子および電界放出陰極の製造方法
EP1022764A1 (en) * 1999-01-25 2000-07-26 Lucent Technologies Inc. Article comprising enhanced nanotube emitter structure and process for fabricating article
GB2346731A (en) * 1999-02-12 2000-08-16 Toshiba Kk Electron emission film and field emission cold cathode device
JP2001035361A (ja) * 1999-07-16 2001-02-09 Futaba Corp 電子放出源の製造方法、電子放出源及び蛍光発光型表示器
EP1100106A2 (en) * 1999-10-18 2001-05-16 Lucent Technologies Inc. Article comprising aligned nanowires and process for fabricating article
JP2001143601A (ja) * 1999-11-10 2001-05-25 Sharp Corp 冷陰極及びその製造方法
JP2001167720A (ja) * 1999-12-07 2001-06-22 Natl Inst Of Advanced Industrial Science & Technology Meti 平面ディスプレイ
JP2001189142A (ja) 1999-10-21 2001-07-10 Sharp Corp 画像形成装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6283812B1 (en) * 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196086A (ja) * 1992-12-22 1994-07-15 Mitsubishi Electric Corp 電界放出陰極及びその形成方法
JP2000090809A (ja) * 1998-09-09 2000-03-31 Toshiba Corp 電界放出陰極、電子放出素子および電界放出陰極の製造方法
EP1022764A1 (en) * 1999-01-25 2000-07-26 Lucent Technologies Inc. Article comprising enhanced nanotube emitter structure and process for fabricating article
GB2346731A (en) * 1999-02-12 2000-08-16 Toshiba Kk Electron emission film and field emission cold cathode device
JP2001035361A (ja) * 1999-07-16 2001-02-09 Futaba Corp 電子放出源の製造方法、電子放出源及び蛍光発光型表示器
EP1100106A2 (en) * 1999-10-18 2001-05-16 Lucent Technologies Inc. Article comprising aligned nanowires and process for fabricating article
JP2001189142A (ja) 1999-10-21 2001-07-10 Sharp Corp 画像形成装置
JP2001143601A (ja) * 1999-11-10 2001-05-25 Sharp Corp 冷陰極及びその製造方法
JP2001167720A (ja) * 1999-12-07 2001-06-22 Natl Inst Of Advanced Industrial Science & Technology Meti 平面ディスプレイ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1408525A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473327A (zh) * 2018-11-21 2019-03-15 金陵科技学院 层叠双雁翅空环尖体阴极坡浪混合线门控结构的发光显示器
CN109473327B (zh) * 2018-11-21 2020-07-17 金陵科技学院 层叠双雁翅空环尖体阴极坡浪混合线门控结构的发光显示器
WO2022092425A1 (ko) * 2020-10-28 2022-05-05 숭실대학교산학협력단 구조적 안정성이 향상된 탄소나노튜브 시트 롤 이미터, 이의 제조방법 및 이를 이용한 전계 방출 소자

Also Published As

Publication number Publication date
CN100474482C (zh) 2009-04-01
US20040169151A1 (en) 2004-09-02
EP1408525A1 (en) 2004-04-14
EP1408525A4 (en) 2008-05-07
JP3632682B2 (ja) 2005-03-23
CN1533579A (zh) 2004-09-29
JP2003229044A (ja) 2003-08-15
KR20040020934A (ko) 2004-03-09
US20070196564A1 (en) 2007-08-23
KR100877624B1 (ko) 2009-01-07

Similar Documents

Publication Publication Date Title
WO2003009325A1 (en) Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same
WO2003049134A1 (en) Electron emitter, cold-cathode field electron emitter, and method for manufacturing cold-cathode field electron emission display
EP1111647A3 (en) Electron emission device, cold cathode field emission device and method for the production thereof, and cold cathode field emission display and method for the production thereof
EP1313122A4 (en) ELECTRON EMISSION ELEMENT AND METHOD FOR MANUFACTURING SAME; DISPLAY USING THE SAME
WO2002047457A3 (en) Highly stable and efficient oleds with a phosphorescent-doped mixed layer architecture
WO2002095841A3 (en) Electroluminescent device
WO2006052549A3 (en) Integrated sub-nanometer-scale electron beam systems
GB2361805B (en) Field emission array with carbon nanotubes and method for fabricating the field emission array
EP1179862A3 (en) Improved cathode layer in organic light-emitting diode devices
WO2003062139A3 (en) Activation effect on carbon nanotubes
EP1326264A3 (en) Field emission display device having carbon-based emitter
EP1251720A3 (en) Organic semiconductor diode and organic electroluminescence element display device
EP1333465A3 (en) Field emission display and manufacturing method thereof
JP2745814B2 (ja) 電解放出デバイスを用いる平面パネル・ディスプレイ
EP1134816A3 (en) Oled display device and method for partterning cathodes of the device
EP1246273A3 (en) Electroluminescence display and manufacturing method of same, mask and manufacturing method of same
EP1011123A3 (en) Cold cathode field emission device, process for the production thereof, and cold cathode field emission display
EP1487004A3 (en) Electron emission device, electron source, and image display having dipole layer
WO2006062622A3 (en) Field emission display with electron trajectory field shaping
US7847311B2 (en) Organic light emitting display (OLED) with conductive spacer and its method of manufacture
EP1383152A3 (en) Emitter with dielectric layer having implanted conducting centers
FR2836279B1 (fr) Structure de cathode pour ecran emissif
WO2004068455A3 (en) Line patterned gate structure for a field emission display
WO2005106927A3 (en) Hot electron transistor
WO1999045559A3 (en) Field emission display having an ion shield

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 10479408

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1020037016760

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002753190

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 20028145208

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2002753190

Country of ref document: EP