WO2003081664A2 - Procede de transfert d'elements de substrat a substrat - Google Patents
Procede de transfert d'elements de substrat a substrat Download PDFInfo
- Publication number
- WO2003081664A2 WO2003081664A2 PCT/FR2003/000905 FR0300905W WO03081664A2 WO 2003081664 A2 WO2003081664 A2 WO 2003081664A2 FR 0300905 W FR0300905 W FR 0300905W WO 03081664 A2 WO03081664 A2 WO 03081664A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- transferred
- layer
- handle
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
Definitions
- the present invention relates to a method for transferring at least one element, such as a layer of material or a component, from a donor substrate to a target substrate. More specifically, it is a transfer method using an intermediate substrate, also referred to as a handle substrate.
- the invention finds applications in the manufacture of composite structures combining III-V type semiconductors and silicon. Other applications can be found in the manufacture of thin-film substrates or in the transfer of components to any supports, and in particular to plastic wafers.
- handle substrates which guarantee that the thin layers are maintained during the transfer (reference 4).
- the handle substrate is first adhered to a donor substrate, and, more specifically, to a portion of the donor substrate which is to be transferred. This is for example the thin layer. This part is then detached from the donor substrate and adhered to a target substrate. It is finally released from the handle substrate.
- the part to be transferred is integral with the handle substrate and can undergo various treatments.
- the adhesion means used to fix the part to be transferred to the handle substrate.
- the adhesion means must in particular be firm enough to withstand the constraints imposed by the treatments of the part to be transferred. They must also be loose enough to be able to be defeated when the part to be transferred must be detached from the handle substrate.
- the imperatives of resistance and reversibility of the adhesion are antagonistic and imply difficulties of compromise. Solutions have been envisaged by using a handle substrate capable of being cleaved, or by removing the handle substrate by abrasion. These solutions are however complex and increase the stresses on the element to be transferred.
- the object of the present invention is to propose a method which does not have the difficulties and limitations indicated above.
- One goal is in particular to propose a method making it possible to meet both the requirements a firm adhesion between an element to be transferred and a substrate-handle, and a reversible adhesion for the final detachment of the substrate-handle.
- Another aim is to propose a process whose implementation is simple, inexpensive and compatible with industrial production.
- the invention more specifically relates to a method of transferring at least one element from a donor substrate to a target substrate, the element to be transferred being made integral with a substrate-handle via an adhesive layer capable of being degraded, a degradation of the adhesive layer being carried out with a view to releasing the element to be transferred.
- the method comprises the following successive steps: a) bonding of the element to be transferred from the donor substrate to the handle support by means of the adhesive layer, b) treatment of the donor substrate and / or of the element to be transferred, c) degradation of the adhesive layer, d) the transfer of the element to be transferred to the target substrate, e) the separation of the element to be transferred and the handle substrate.
- the following discussion refers to only one element to be transferred. It should however be noted that a plurality of elements to be transferred can be by means of a single or of several handle substrates. It is considered, within the meaning of the invention, that the adhesive layer is liable to be degraded when it can be degraded by non-destructive means for the element to be transferred.
- the elements which can be transferred by the process of the invention include the layers of material, the parts of layers, the components, the parts of components and, more generally, any element pertaining to the techniques of microelectronics, micromechanics or integrated optics.
- degradation any physical or chemical modification of the adhesive which results in a modification of its mechanical strength compatible with a subsequent separation.
- the bonding step uses, as indicated above, a layer of glue. It thus excludes any direct molecular bonding.
- the glue can be chosen from an epoxy glue, an ultraviolet radiation curing glue, a polymer-based glue, or a wax-based glue.
- the step of bonding the element to be transferred to the handle support can be preceded by the manufacture of this element on the donor substrate. It can also be preceded by the preparation of the donor substrate to promote the detachment of the element to be transferred, or also by the preparation of the interface between the donor substrate and the element to be transferred in order to obtain an energy interface. controlled. An etching stop layer may also be provided in the substrate.
- a weakened area can be formed in the donor substrate by implantation of ions. This area can then be used later for a cleavage in order to detach the element to be transferred. Cleavage can also be used to thin the donor substrate. The technique of forming a weakened area for cleavage is known per se.
- the donor substrate can also be provided with a buried sacrificial layer capable of being removed to obtain the element to be transferred.
- step b) and thanks to the presence of the handle substrate, one or more of the following operations can be carried out, for example:
- the separation of the layer containing the element to be transferred from the donor substrate or from the element to be transferred and from a remaining part of the donor substrate can take place by cleavage or tearing according to a weakened zone, if such a zone has been planned as shown above. Separation can also take place by cutting, for example with a saw. More simply, the donor substrate, or even part of the element to be transferred can be cut or thinned. Thinning is, for example, thinning by polishing or abrasion. The abrasion can be mechanical and / or chemical.
- Cutting perpendicular to a free face of the element to be transferred can also be used to isolate or delimit components of the element to be transferred.
- the grooves or the sides resulting from the cutting can then be used later to facilitate the degradation of the adhesive layer.
- the handle substrate thus makes it possible to stiffen the element to be transferred and possibly to maintain its cohesion. At the very least, it gives it sufficient mechanical strength to withstand the stresses generated by the treatment.
- any cutting of the element to be transferred can extend through the handle substrate to delimit several smaller elements to be transferred. These elements are then each associated with a substrate-handle of suitable size, obtained by cutting the initial substrate-handle.
- the transfer of the element to be transferred to the target substrate and the degradation of the adhesive layer can take place in any order. However, if the degradation of the adhesive can lead to an accidental premature separation, it is preferable to first transfer the element to the target substrate by making it integral with this substrate.
- the degradation of the adhesive layer can be caused by subjecting it to chemical treatment and / or radiation treatment and / or plasma treatment and / or heat treatment.
- the chemical treatment assisted by radiation is, for example, a treatment of the UN-0 3 type (Ozone obtained by UV).
- the handle substrate can advantageously be made of a material transparent to radiation. The radiation is thus applied to the layer of adhesive through the handle substrate.
- the substrate-handle with channels for supplying the chemical agent.
- the channels pass through the support substrate from its free face to its face in contact with the adhesive layer.
- the degradation of the adhesive layer has the effect of weakening it. However, as indicated above, the degradation of the adhesive layer does not lead, or at least not necessarily, to the separation of the element to be transferred and the substrate-handle.
- the transfer of the element to be transferred to the target substrate includes its contacting with this substrate. Again, this can be a bonding using an intermediate layer of glue.
- the assembly can however also be obtained by direct molecular adhesion. In the latter case, the free face of the element to be transferred is prepared and cleaned appropriately, to give it a smooth and hydrophilic character.
- the latter After the postponement, and after the degradation of the adhesive layer which connects the element to be transferred to the handle substrate, the latter is detached. Detachment can take place during the degradation step. It can be caused or assisted by the exercise of tensile, pressure, shear, peeling, bending forces, or any combination of these forces.
- a jet of fluid and / or a tapered object can also be applied or inserted between the element to be transferred and the substrate-handle or even through the substrate-handle if the latter has been conditioned.
- the component can also be separated from the handle substrate during its transfer to the target substrate. This is for example the case when a needle is used through a perforated handle substrate.
- Another variant consists in separating the component from the handle substrate before it is transferred to the support.
- a manipulator for example a vacuum micropipette
- a manipulator for example a vacuum micropipette
- the transfer of elements can be collective or selective. It can even be a transfer of the entire plate.
- the bonding operations on the handle substrate and the processing can be carried out collectively for a set of elements. Postponement and separation of elements can then take place for a smaller subset of items. These latter operations are then repeated for each subset of elements. In a particular application, components can thus be transferred one by one.
- FIG. 1 is a simplified schematic section of a donor substrate comprising elements to be transferred.
- FIG. 2 is a schematic section of a structure comprising the donor substrate of Figure 1 and a handle substrate.
- Figures 3 and 4 are schematic sections of the structure of Figure 2 and illustrate stages of treatment and degradation.
- FIG. 5 is a schematic section of a new structure obtained by assembling the structure of Figure 4 with a target substrate. Arrows F showing the detachment
- Figure 6 is a schematic section of the structure of Figure 5 after removal of the substrate-handle.
- FIG. 1 shows a donor substrate 10 in which components 12 are formed. These are flush with a face 14 of the substrate.
- the donor substrate 10 is a solid substrate. However, it can be replaced by a silicon-on-insulator (SOI) or other composite substrate.
- SOI silicon-on-insulator
- the reference 16 designates a zone of fragility possibly formed in the substrate by means of an implantation of ions of a gaseous species.
- This technique of forming a zone of weakness by implantation is well known per se and is therefore not detailed here.
- This brittleness zone can also correspond to a bonding interface whose energy is controlled.
- the brittleness zone 16 delimits a surface part 18 of the substrate comprising the components 12 and a remaining solid part 20 devoid of components.
- FIG. 2 shows the assembly of the substrate 10 with a handle substrate 30. The assembly takes place by gluing using an intermediate layer of glue 32.
- the glue is, for example, a glue of the • cyanoacrylate type, polymerizable under the action of ultraviolet radiation.
- the handle substrate 30 is for this purpose made of a glass. transparent to radiation.
- Cyanoacrylate glue has the advantage of being able to be deposited with a spinner in a particularly homogeneous layer.
- the assembly does not require any pressure exercise.
- the cyanoacrylate glue can be replaced by a wax (wax) or a resin (durimide) or a resin of the type used for lithography in microelectronics or by any other glue liable to be degraded.
- the thickness and the nature of the handle substrate 30 are chosen so as to ensure good rigidity and to protect the components 12. The thickness is also sufficient to allow easy handling.
- FIG. 3 shows a treatment for thinning the donor substrate 10.
- the treatment for thinning comprises cleavage of the substrate according to the weakened zone in order to detach the massive part 20.
- the surface part 18 also undergoes thinning by abrasion. Abrasion, indicated summarily by small arrows, takes place on the free face of the surface part 18, that is to say the face opposite to that in contact with the layer of glue '32.
- Another means of thinning consists in consuming the substrate, for example by chemical mechanical polishing, rectification or else by chemical attack.
- the surface part 18 and the components 12 are not destroyed despite their possible thinness. They are indeed maintained firmly by the handle substrate 30.
- the thinned surface portion 18 and the components constitute the elements to be transferred within the meaning of the invention.
- FIG. 4 illustrates an additional treatment which includes cutting of the surface layer 18 by practicing trenches 19.
- the trenches 19 pass through the layer 18 from side to side and make it possible to individualize the components 12.
- FIG. 4 also illustrates the degradation of the adhesive layer 32.
- a heat treatment at a temperature of the order of 300 ° C., or an ultraviolet treatment UN coupled or not with a gaseous agent such as 0 3 makes it possible to reduce by 50 %, or. plus, the resistance of the adhesive layer 32.
- Degradation can also be caused by subjecting the adhesive layer to a chemical action of a liquid solvent (acetone, trichlorethylene) or gaseous or of an etchant. a supercritical fluid such as C0 2 for example. The chemical action is indicated by small arrows.
- the trenches 19 provide excellent access to the adhesive layer 32.
- Channels 34, indicated in broken lines, can also be provided in the handle substrate 30 for application of the solvent from the free face of this substrate.
- the degradation is preferably continued until adhesion is obtained. less than an adhesion established subsequently between the elements to be transferred and the target substrate.
- FIG. 5 shows the transfer of the elements to be transferred to a target substrate 40.
- the target substrate 40 can be a flexible or rigid substrate. It is, for example, a plastic chip card.
- the transfer of the elements to be transferred can use an adhesive, or, as in the example illustrated, direct molecular bonding.
- the free face of the layer 18 may be previously subjected to a chemical cleaning, polishing or a dry activation so as to promote the direct adhesion. These operations can be carried out before or after the formation of the trenches 19.
- the handle substrate 30 is detached. Arrows F indicate the tearing forces exerted on the handle substrate 30, relative to the target substrate 40.
- the adhesive layer 32 was previously degraded it has an adhesion generally lower than that existing between the elements to be transferred and the target substrate. A tear-off thus occurs along the layer of adhesive 32.
- the reference L indicates a blade which can be inserted at the height of the layer of adhesive 32 or a needle passing through the conditioned handle. This allows, if necessary, to relieve the stress exerted on the adhesion interface between the elements to be transferred and the target substrate.
- FIG. 6 illustrates the structure obtained after tearing off and elimination of the handle substrate. An additional cleaning treatment eliminates any adhesive residue on the components.
- the device of Figure 6 can also be the subject of packaging. Finally, takes contact may be provided on the components if they are electronic components.
- FIGS. 5 and 6 illustrate a collective transfer of the components 12, it is possible to envisage a selective transfer by adhering a reduced number of components to the target substrate 40.
- the elements and the handle are cut so as to obtain individual objects.
- the glue is then degraded (a variant consists in degrading the glue before cutting).
- the handle end is then detached from each transferred object. Several postponement and tearing operations are then provided for the successive release of the components.
- the method therefore involves the degradation of the adhesive layer (which can be called the first bonding) before the transfer of the element to be transferred to the target substrate (which can be called the second bonding).
- This approach has certain advantages.
- the second bonding is not altered by the degradation step (by thermal, chemical treatment, radiation, etc.) since it takes place before this second bonding.
- the second bonding means can be sensitive to the degradation means chosen for the degradation of the first bonding (if one has chosen to separate at the level of the first layer of glue degraded by a localized means, mechanism for example which will not alter the second gluing).
- the second bonding is a bonding by molecular adhesion
- this bonding needs to be reinforced by a heat treatment. If the first bonding area has not been degraded before this treatment, it can itself be reinforced by said heat treatment until reaching a threshold where it can no longer be degraded thereafter. It is therefore important to carry out the degradation of the first bonding before the second bonding.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/508,917 US20050178495A1 (en) | 2002-03-25 | 2003-03-21 | Method for transferring elements between substrates |
| JP2003579275A JP2005532674A (ja) | 2002-03-25 | 2003-03-21 | エレメントを基板から基板へ移設する方法 |
| EP03725311A EP1493181A2 (fr) | 2002-03-25 | 2003-03-21 | Procede de transfert d'elements de substrat a substrat |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR02/03693 | 2002-03-25 | ||
| FR0203693A FR2837620B1 (fr) | 2002-03-25 | 2002-03-25 | Procede de transfert d'elements de substrat a substrat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2003081664A2 true WO2003081664A2 (fr) | 2003-10-02 |
| WO2003081664A3 WO2003081664A3 (fr) | 2004-04-01 |
Family
ID=27799237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FR2003/000905 Ceased WO2003081664A2 (fr) | 2002-03-25 | 2003-03-21 | Procede de transfert d'elements de substrat a substrat |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20050178495A1 (fr) |
| EP (1) | EP1493181A2 (fr) |
| JP (1) | JP2005532674A (fr) |
| FR (1) | FR2837620B1 (fr) |
| WO (1) | WO2003081664A2 (fr) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2866983A1 (fr) * | 2004-03-01 | 2005-09-02 | Soitec Silicon On Insulator | Realisation d'une entite en materiau semiconducteur sur substrat |
| US7060590B2 (en) | 2003-01-24 | 2006-06-13 | S.O.I. Tec Silicon On Insulator Technologies S.A. | Layer transfer method |
| US7122095B2 (en) | 2003-03-14 | 2006-10-17 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Methods for forming an assembly for transfer of a useful layer |
| FR2895562A1 (fr) * | 2005-12-27 | 2007-06-29 | Commissariat Energie Atomique | Procede de relaxation d'une couche mince contrainte |
| EP1531489A3 (fr) * | 2003-11-11 | 2007-10-17 | Sharp Kabushiki Kaisha | Plaquette, dispositif semi-conducteur et son procédé de fabrication |
| US7439160B2 (en) | 2004-03-01 | 2008-10-21 | S.O.I.Tec Silicon On Insulator Technologies | Methods for producing a semiconductor entity |
| WO2010023082A1 (fr) * | 2008-08-28 | 2010-03-04 | S.O.I.Tec Silicon On Insulator Technologies | Procédé d’initiation de liaison moléculaire |
| WO2010102943A1 (fr) * | 2009-03-12 | 2010-09-16 | S.O.I. Tec Silicon On Insulator Technologies | Procédé de fabrication d'une structure multicouche avec un transfert de couche de circuit |
| EP1543553B1 (fr) * | 2002-07-17 | 2011-02-09 | S.O.I.Tec Silicon on Insulator Technologies | Procede de transfert de couche |
| WO2011033758A3 (fr) * | 2009-09-15 | 2011-07-14 | Canon Kabushiki Kaisha | Structure de substrat comprenant une région fonctionnelle et procédé de transfert de la région fonctionnelle |
| US8927320B2 (en) | 2009-06-26 | 2015-01-06 | Soitec | Method of bonding by molecular bonding |
| US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2866982B1 (fr) * | 2004-02-27 | 2008-05-09 | Soitec Silicon On Insulator | Procede de fabrication de composants electroniques |
| DE102004048202B4 (de) * | 2004-09-30 | 2008-05-21 | Infineon Technologies Ag | Verfahren zur Vereinzelung von oberflächenmontierbaren Halbleiterbauteilen und zur Bestückung derselben mit Außenkontakten |
| FR2877142B1 (fr) * | 2004-10-21 | 2007-05-11 | Commissariat Energie Atomique | Procede de transfert d'au moins un objet de taille micrometrique ou millimetrique au moyen d'une poignee en polymere. |
| JP2007251080A (ja) * | 2006-03-20 | 2007-09-27 | Fujifilm Corp | プラスチック基板の固定方法、回路基板およびその製造方法 |
| JP4958287B2 (ja) * | 2007-05-30 | 2012-06-20 | 東京応化工業株式会社 | 剥がし装置における剥離方法 |
| US7520951B1 (en) | 2008-04-17 | 2009-04-21 | International Business Machines (Ibm) Corporation | Method of transferring nanoparticles to a surface |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| EP2339614A1 (fr) * | 2009-12-22 | 2011-06-29 | Imec | Procédé pour l'empilage de puces semi-conductrices |
| JP5943544B2 (ja) * | 2010-12-20 | 2016-07-05 | 株式会社ディスコ | 積層デバイスの製造方法及び積層デバイス |
| WO2014020387A1 (fr) | 2012-07-31 | 2014-02-06 | Soitec | Procédés de formation de structures semi-conductrices incluant des dispositifs de microsystème électromécanique et des circuits intégrés sur les côtés opposés de substrats, et structures ainsi que dispositifs connexes |
| DE102014014422A1 (de) * | 2014-09-29 | 2016-03-31 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht |
| CN114256120B (zh) * | 2020-09-21 | 2025-05-16 | 重庆康佳光电科技有限公司 | 暂存装置、暂存装置的制作方法和微元件的转移方法 |
| FR3137491B1 (fr) * | 2022-06-30 | 2024-10-18 | Commissariat Energie Atomique | Procédé de fabrication d’une structure pavée |
| FR3140707A1 (fr) * | 2022-10-06 | 2024-04-12 | Soitec | Procede de fabrication d’une structure composite comprenant des paves |
| WO2025073392A1 (fr) * | 2023-10-06 | 2025-04-10 | Soitec | Procede de fabrication d'une structure composite pour la microelectronique, l'optique ou l'optoelectronique |
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| US5618739A (en) * | 1990-11-15 | 1997-04-08 | Seiko Instruments Inc. | Method of making light valve device using semiconductive composite substrate |
| US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
| US5455202A (en) * | 1993-01-19 | 1995-10-03 | Hughes Aircraft Company | Method of making a microelectric device using an alternate substrate |
| US5591678A (en) * | 1993-01-19 | 1997-01-07 | He Holdings, Inc. | Process of manufacturing a microelectric device using a removable support substrate and etch-stop |
| FR2725074B1 (fr) * | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat |
| JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
| FR2781925B1 (fr) * | 1998-07-30 | 2001-11-23 | Commissariat Energie Atomique | Transfert selectif d'elements d'un support vers un autre support |
| EP1041624A1 (fr) * | 1999-04-02 | 2000-10-04 | Interuniversitair Microelektronica Centrum Vzw | Methode de transfert de substrates ultra-minces et mis en oeuvre de sa methode dans la fabrication de dispositifs de type couches minces |
| FR2796491B1 (fr) * | 1999-07-12 | 2001-08-31 | Commissariat Energie Atomique | Procede de decollement de deux elements et dispositif pour sa mise en oeuvre |
| US6214733B1 (en) * | 1999-11-17 | 2001-04-10 | Elo Technologies, Inc. | Process for lift off and handling of thin film materials |
| JP2002075915A (ja) * | 2000-08-25 | 2002-03-15 | Canon Inc | 試料の分離装置及び分離方法 |
| US6638835B2 (en) * | 2001-12-11 | 2003-10-28 | Intel Corporation | Method for bonding and debonding films using a high-temperature polymer |
| FR2842650B1 (fr) * | 2002-07-17 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique |
-
2002
- 2002-03-25 FR FR0203693A patent/FR2837620B1/fr not_active Expired - Fee Related
-
2003
- 2003-03-21 US US10/508,917 patent/US20050178495A1/en not_active Abandoned
- 2003-03-21 JP JP2003579275A patent/JP2005532674A/ja active Pending
- 2003-03-21 WO PCT/FR2003/000905 patent/WO2003081664A2/fr not_active Ceased
- 2003-03-21 EP EP03725311A patent/EP1493181A2/fr not_active Withdrawn
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1543553B1 (fr) * | 2002-07-17 | 2011-02-09 | S.O.I.Tec Silicon on Insulator Technologies | Procede de transfert de couche |
| US7060590B2 (en) | 2003-01-24 | 2006-06-13 | S.O.I. Tec Silicon On Insulator Technologies S.A. | Layer transfer method |
| US7122095B2 (en) | 2003-03-14 | 2006-10-17 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Methods for forming an assembly for transfer of a useful layer |
| EP1531489A3 (fr) * | 2003-11-11 | 2007-10-17 | Sharp Kabushiki Kaisha | Plaquette, dispositif semi-conducteur et son procédé de fabrication |
| US7176554B2 (en) | 2004-03-01 | 2007-02-13 | S.O.I. Tec Silicon On Insulator Technologies S.A. | Methods for producing a semiconductor entity |
| US7439160B2 (en) | 2004-03-01 | 2008-10-21 | S.O.I.Tec Silicon On Insulator Technologies | Methods for producing a semiconductor entity |
| FR2866983A1 (fr) * | 2004-03-01 | 2005-09-02 | Soitec Silicon On Insulator | Realisation d'une entite en materiau semiconducteur sur substrat |
| FR2895562A1 (fr) * | 2005-12-27 | 2007-06-29 | Commissariat Energie Atomique | Procede de relaxation d'une couche mince contrainte |
| WO2007074153A3 (fr) * | 2005-12-27 | 2008-01-17 | Commissariat Energie Atomique | Procede de relaxation d'une couche mince contrainte |
| US7981238B2 (en) | 2005-12-27 | 2011-07-19 | Commissariat A L'energie Atomique | Method for relaxing a stressed thin film |
| US8163570B2 (en) | 2008-08-28 | 2012-04-24 | Soitec | Method of initiating molecular bonding |
| FR2935537A1 (fr) * | 2008-08-28 | 2010-03-05 | Soitec Silicon On Insulator | Procede d'initiation d'adhesion moleculaire |
| WO2010023082A1 (fr) * | 2008-08-28 | 2010-03-04 | S.O.I.Tec Silicon On Insulator Technologies | Procédé d’initiation de liaison moléculaire |
| FR2943177A1 (fr) * | 2009-03-12 | 2010-09-17 | Soitec Silicon On Insulator | Procede de fabrication d'une structure multicouche avec report de couche circuit |
| WO2010102943A1 (fr) * | 2009-03-12 | 2010-09-16 | S.O.I. Tec Silicon On Insulator Technologies | Procédé de fabrication d'une structure multicouche avec un transfert de couche de circuit |
| US8932938B2 (en) | 2009-03-12 | 2015-01-13 | Soitec | Method of fabricating a multilayer structure with circuit layer transfer |
| US8927320B2 (en) | 2009-06-26 | 2015-01-06 | Soitec | Method of bonding by molecular bonding |
| US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
| WO2011033758A3 (fr) * | 2009-09-15 | 2011-07-14 | Canon Kabushiki Kaisha | Structure de substrat comprenant une région fonctionnelle et procédé de transfert de la région fonctionnelle |
| US8513093B2 (en) | 2009-09-15 | 2013-08-20 | Canon Kabushiki Kaisha | Substrate structure including functional region and method for transferring functional region |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1493181A2 (fr) | 2005-01-05 |
| FR2837620B1 (fr) | 2005-04-29 |
| FR2837620A1 (fr) | 2003-09-26 |
| JP2005532674A (ja) | 2005-10-27 |
| WO2003081664A3 (fr) | 2004-04-01 |
| US20050178495A1 (en) | 2005-08-18 |
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