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WO2003076059A1 - Melangeur de gaz, reacteur a gaz et dispositif modificateur de surface - Google Patents

Melangeur de gaz, reacteur a gaz et dispositif modificateur de surface Download PDF

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Publication number
WO2003076059A1
WO2003076059A1 PCT/JP2003/002722 JP0302722W WO03076059A1 WO 2003076059 A1 WO2003076059 A1 WO 2003076059A1 JP 0302722 W JP0302722 W JP 0302722W WO 03076059 A1 WO03076059 A1 WO 03076059A1
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WO
WIPO (PCT)
Prior art keywords
gas
flow path
reaction
annular
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/002722
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English (en)
Japanese (ja)
Inventor
Shuzo Nomura
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Individual
Original Assignee
Individual
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Filing date
Publication date
Priority claimed from JP2002109776A external-priority patent/JP2005230586A/ja
Priority claimed from JP2002334332A external-priority patent/JP2005230587A/ja
Application filed by Individual filed Critical Individual
Priority to AU2003221331A priority Critical patent/AU2003221331A1/en
Publication of WO2003076059A1 publication Critical patent/WO2003076059A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/421—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/43—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction
    • B01F25/432—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction with means for dividing the material flow into separate sub-flows and for repositioning and recombining these sub-flows; Cross-mixing, e.g. conducting the outer layer of the material nearer to the axis of the tube or vice-versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/2415—Tubular reactors

Definitions

  • Gas mixing device gas reaction device and surface reforming device
  • the present invention relates to a gas mixing device, a gas reaction device, and a semiconductor well used in a chemical reaction process in a chemical plant, a semiconductor manufacturing process, and the like.
  • the present invention relates to a surface modification device used for surface treatment of glass substrates such as glass and glass substrates, and for surface treatment of parts and tools.
  • the gas When reacting gas in a reaction furnace, the gas is allowed to flow in a fixed amount using a flow meter or a mass flow, and then reacted in the reaction furnace.
  • a mixed gas consisting of a plurality of gases is uniformly mixed and stirred, and at the same time, the entire gas is adjusted to a uniform temperature. If not, it is difficult to generate a uniform reaction product.
  • the reaction in the reactor may be performed quickly unless the plurality of gases are adjusted to their own uniform temperatures. Can not.
  • the reactor must be made of a material that can withstand high temperatures and large enough to accommodate the object, and the larger the object, the lower the cost of the reactor. growing .
  • Such a surface modification apparatus includes a processing gas, which is often used for surface modification of an object to be treated, such as a method using thermal ionization, discharge, or laser light. Since the reaction temperature of the gas is high, the energy consumption is large and the object to be treated is limited to materials that can withstand high temperatures. Disclosure of the invention
  • the present invention is directed to an annular flow path communicating in the circumferential direction, and a position of an inlet and an outlet in the annular flow path in the circumferential direction.
  • a plurality of inlets and outlets formed in the annular channel so as to deviate from each other; and the inlet or the above-mentioned channel formed in the annular channel.
  • a mixed flow path composed of a plurality of communication flow paths connected to the outlet, and a supply flow path and a discharge flow path of the fluid connected to the mixed flow path It is a gas mixing device equipped with a gas mixture.
  • a mixed flow path consisting of a plurality of communication flow paths connecting the outlet and the outlet, and a supply flow path for a fluid connected to the mixed flow path.
  • Gas mixture with exhaust and discharge channels It may be an integrated device.
  • a gas reaction flow path comprising an inflow port and an outflow port of the above, and a plurality of communication channels formed in an annular flow path and communicating with the inflow port or the outflow port; and
  • the gas reactor may be provided with a supply flow path and a discharge flow path for the fluid that is communicated with the reaction channel.
  • a plurality of annular flow passages arranged in a state of being parallel to each other and communicating in the circumferential direction, and the annular shape such that the positions of the inlet and the outlet in the annular flow passage are shifted in the circumferential direction.
  • a plurality of inflow and outflow ports formed in the flow path; and a plurality of communication flow paths communicating the inflow port and the outflow port formed in different annular flow paths.
  • the gas reaction device may be provided with a gas reaction flow path as described above, and a supply flow path and a discharge flow path of a fluid connected to the gas reaction flow path.
  • the inlet and the outlet are respectively provided in the annular flow path, and the gas flows into the annular flow path and the annular flow path force. Means the outlet from which the gas flows out.
  • gas flows into or out of the communication channel.
  • the terms of the inlet 28 and outlet 29 of the communication channel, which is the mouth, are also used.
  • the gas supply device is connected to the supply channel of the gas mixing device or the gas reaction device, or a heating means for heating the mixing channel and the gas reaction channel is provided. It is advisable to install a tank in the supply flow path and the discharge flow path. It is good to connect the gas discharge port of the vacuum ejector that flows in multiple gases and discharges the mixed gas to the supply flow path of the gas mixing device.
  • a pump may be connected to the reaction gas discharge port of the gas reactor connected to the gas mixing device.
  • the gas flowing through the gas reaction channel is a single or a plurality of gases, which react in the reaction channel.
  • the discharge channel of the gas reactor may be a surface reformer connected to the accumulation chamber.
  • the gas to be treated by the gas mixing device and gas reaction device of the present invention is not limited to gas at normal temperature, but also includes liquefied gas that becomes gas when heated. It is a thing.
  • the gas By heating the mixing device, the gas can be heated to a uniform temperature.
  • the gas is further mixed by the high-speed collisional turbulence of the gas in the mixing flow path so that the plurality of gases are uniformly stirred.
  • the gas passes through the flow path, it collides with the wall at multiple points, so that a plurality of gases are further finely and uniformly agitated and are discharged from the discharge flow path.
  • a plurality of gases input to the vacuum ejector are mixed, and the mixed gas is discharged.
  • the reaction gas whose reaction has been completed is discharged from the reaction furnace by the pump.
  • the same type or a plurality of processing gases are sent to the gas reaction channel, the same type or a plurality of types may be generated by the high-speed collisional turbulence of the gas in the channel.
  • the processing gas collides with each other many times. In the gas, molecules and atoms move around at a high speed, and repeatedly collide with each other and run around irregularly. At that time, when the flow path is heated, the processing gas is also heated.
  • the treated gas will react. Even if the amount of processing gas flowing in the flow passage is increased, the flow velocity of the gas in the flow passage is increased, the number of collisions with the wall surface is increased, and more heat is given from the wall surface. Therefore, even if the amount of the processing gas is increased, the heating reaction can be efficiently performed in the same reaction channel.
  • the plurality of processing gases are uniformly mixed and stirred, so that a reaction gas mixed in a uniform state can be generated.
  • the reaction gas heated to the reaction temperature is discharged from the discharge channel by the pressure of the processing gas.
  • the gas is uniformly heated to a temperature close to the reaction temperature in the furnace. Can be supplied.
  • the reaction gas having a uniform temperature can be produced only by flowing the processing gas into the gas reaction channel heated to the reaction temperature. It can be manufactured.
  • FIG. 1 is a system diagram showing a gas mixing device and a gas reaction device according to one embodiment of the present invention.
  • FIG. 2 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.
  • FIG. 3 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.
  • FIG. 4 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.
  • FIG. 5 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.
  • FIG. 6 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.
  • FIG. 7 is a perspective view of a case where a mixing channel and a reaction channel used in the apparatus according to the embodiment of the present invention are manufactured by piping.
  • FIG. 8 is a perspective view showing a case where a mixed flow path and a reaction flow path used in the apparatus according to the embodiment of the present invention are manufactured by blocking.
  • Fig. 9 shows the mixing channel and the reaction channel used in the device of the embodiment of the present invention, which were partially made using a tube material and partially made into a block. It is a perspective view of the case.
  • FIG. 10 is a perspective view showing an exploded state of a connecting portion between the mixing channel, the annular channel of the reaction channel, and the communication channel shown in FIG.
  • FIG. 11 is a system diagram showing a gas reaction apparatus according to one embodiment of the present invention.
  • FIG. 12 shows a gas reactor and surface modification of another embodiment of the present invention.
  • FIG. 2 is a system diagram showing an apparatus (thin film forming apparatus).
  • FIG. 13 is a system diagram showing a gas reaction apparatus and a surface reforming apparatus (thin film forming apparatus) according to another embodiment of the present invention.
  • FIG. 14 is a system diagram showing a gas reaction apparatus and a surface reforming apparatus (thin film forming apparatus) according to another embodiment of the present invention.
  • the superheated steam generated by heating up to the reaction temperature is sent to the accumulation chamber 17.
  • the superheated steam heated to each reaction temperature is used in the accumulation chamber 17 for forming an oxide film on a wafer for a semiconductor as the object 16 to be processed.
  • the superheated steam generated here corresponds to reaction gas A.
  • the explanation of the symbols used in the figure is as follows.
  • Example Ru Oh down Gurley had snare query the gas species, air, N 2 (nitrogen), 0 2 (oxygen), H 2 (hydrogen), Ar (General gases such as argon (Argon), He (Hermium), II 20 (Water), CO 2 (Carbon oxide), CO (Carbon oxide), NH 3 (Ammonia) A), CF 4 (Te preparative La off Ruo b meth emissions), SF 6 (six full Tsu sulfur), CH 4 (meth emissions), S i (0 C 2 H 5) 4 ( Te DOO La et It may be a liquefied gas such as Tokishiran) or any mixed gas.
  • the processing gas suitable for the processing purpose can be freely selected from gases other than the above.
  • the embodiment shown in FIG. 1 is capable of supplying a plurality of gases to the reactor.
  • This embodiment shows a case in which three types of gas A, gas B, and gas C are used.
  • the mass flow 3, mixing device 2, and reactor 1 are connected by piping.
  • Piping is made of metal, ceramic, etc. that can withstand high temperatures.
  • the gas A, gas B, and gas C are flow-regulated by each mass flow 3 and sent to each mixing device 2 by the pressure of each gas itself. .
  • Any force of gas A, gas B and gas C can be supplied to the reactor by the force S.
  • the mixing device 2 is provided with a mixing channel as described in FIG. 7 to FIG. 9 which will be described later in detail.
  • Each gas enters the tank 26 on the supply side from the supply flow path 22 of the mixing device 2.
  • the gas colliding in the tank 26 passes through the inlets 28 of the plurality of communication passages 25 connected to the tank 26 and flows out of the outlet 2 of the arrest passage.
  • 9 enters the annular channel 24 from the inlet 31 of the first annular channel 24, collides with the wall surface of the annular channel 24, and from a different inlet 31.
  • the entered gas collides.
  • the high-speed gas flows from the outlet 32 of the first-stage annular channel 24 to the inlet 28 of the plurality of communication channels 25 connected to the annular channel 24. Through the outlet 29 of the communication flow path, it enters the annular flow path 24 through the inflow port 31 of the second-stage annular flow path 24, and enters the annular flow path 24.
  • gas from different inlets collides.
  • Gas A, gas B, and gas C which have been uniformly heated to a temperature immediately before the reaction temperature, are sent to a reaction furnace 1 installed in a container 7 through a pipe.
  • the reactor 1 and the vessel 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature.
  • the gas A, gas B, and gas G entering the reactor 1 are further heated by the electric heater 5 and the like in the reactor, and can quickly reach the reaction temperature. .
  • thermo power from a panner such as oil or natural gas, microwave heating, induction heating, etc. You can use it.
  • reaction gas is released out of the reaction furnace 1 by the pressure of the gas itself.
  • FIG. 2 is the same as the embodiment shown in FIG. 1 except that a vacuum pump 8 is connected to the gas outlet of the reactor 1. 1 Same as the embodiment shown in FIG.
  • the mass flow 3, the mixing device 2, the reactor 1, and the vacuum pump 8 are surrounded by piping. Piping is made of metal, ceramic, etc. that can withstand high temperatures.
  • the mixing device 2, and the reactor 1 are evacuated by the vacuum pump 8, a plurality of gases can be easily mixed with the mass flow 3 from the mass flow device 2. Then, it can flow into the reactor 1.
  • the reaction gas is sucked out of the reaction furnace by the vacuum pump 8.
  • the embodiment shown in FIG. 3 is capable of supplying a plurality of gases to the reactor.
  • This embodiment shows a case in which three types of gas A, gas B, and gas C are used.
  • Gas A, Gas: B, Gas C are flow-regulated by each mass flow 3 and one pipe before mixing device 2 by the pressure of each gas itself. And sent to the mixing device 2.
  • Any gas of gas A, gas B, and gas C can be supplied to the reactor.
  • the mass flow 3, the mixing device 2, the reaction furnace 1, and the vacuum pump 8 are connected by piping and run. Piping is made of metal, ceramic, etc. that can withstand high temperatures.
  • the mixing device 2, and the reactor 1 are evacuated by the vacuum pump 8, a plurality of gases can be mixed and mixed easily from the mass flow 3.
  • the flow S can be applied to the reactor 2 and the reactor 1.
  • the mixing device 2 is provided with a mixing channel as described in FIGS. 7 to 9 described later in detail.
  • a plurality of gas A, gas B, and gas C enter the tank 26 on the supply side from the supply flow path 22 of the same mixing device 2.
  • the gas mixture of gas A, gas B, and gas C that collided in the tank 26 passes through the inlets 28 of the plurality of communication passages 25 connected to the tank 26.
  • the inlet 31 of the first annular flow path 24 from the outflow port 29 of the communication flow path enters the annular flow path 24 through the force, and collides with the wall surface of the annular flow path 24.
  • the mixed gases entering from different inlets 31 collide with each other.
  • the high-speed mixing gas flows from the outlet 32 of the first-stage annular channel 24 to the inlet 2 of the plurality of communication channels 25 connected to the annular channel 24. 8, through the outlet port 29 of the communication flow path, through the inlet port 31 of the second-stage annular flow path 24 from the outlet port 29, enters the annular flow path 24 through the inlet port 31, and then enters the annular flow path 24.
  • the mixed gas from different inflow loca- tions collide with each other.
  • the mixed gas having collided with the inner surface of the tank 27 is uniformly mixed and discharged from the discharge channel 23 and discharged.
  • the mixing device 2 installed in the container 6 ⁇ is heated by the electric heater 4, the mixed gas in the mixing channel 21 is uniformly heated by the turbulent motion of the gas. .
  • the temperature of the mixed gas can be heated to just before the reaction temperature of the reactor 1.
  • Mixing device 2 and container 6 are made of metal, ceramic, etc. that can withstand high temperatures. It is produced.
  • the mixed gas is uniformly mixed and stirred up to the temperature immediately before the reaction temperature at the same time, and the uniformly heated mixed gas is sent to the reactor 1 installed in the vessel 7 through the pipe.
  • the reactor 1 and the container 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature.
  • the mixed gas uniformly heated up to the temperature just before the reaction temperature in the reactor 1 is further heated by the electric heater 5 in the reactor and quickly reaches the reaction temperature. This can be done.
  • electric heater 4 instead of electric heater 4 or electric heater 5, it is also possible to use the heat of a panner such as petroleum or natural gas, microwave heating, induction heating, etc. Ray.
  • a panner such as petroleum or natural gas, microwave heating, induction heating, etc. Ray.
  • the reaction gas is sucked out of the reactor by the vacuum pump 8.
  • a plurality of gases can be supplied to the reactor.
  • the drawing shows the case where three types of gas A, gas B, and gas C are used.
  • the gas A whose flow rate has been adjusted by the mass flow 3 enters the vacuum injector 9.
  • the mask opening 13, the vacuum injector 9, the mixing device 2, and the reactor 1 are connected by piping.
  • Piping is made of metal, ceramic, etc. that can withstand high temperatures.
  • Any gas of gas B and gas C connected to the gas A and the vacuum line of the vacuum injector 9 can be supplied to the reactor.
  • Gas B and gas C flow into the mixing device 2 through the vacuum cutter 9 due to the suction force generated when the gas A flows. In this way, even when there is no vacuum pump, it becomes possible to easily flow a plurality of gases into the same mixing device 2.
  • the mixing apparatus 2 is provided with a mixing channel as described in FIGS. 7 to 9 described later in detail.
  • the gas A, gas B, and gas C whose flow rates have been adjusted by the respective mass flows 3 are gathered by the vacuum ejector 9 to form the same mixing device 2.
  • the mixed gas colliding in the tank 26 passes through the inlets 28 of the plurality of communication channels 25 connected to the tank 26, and flows out of the communication channel 25 through the inlets 2 of the communication channels 25.
  • the mixed gases that have entered collide with each other.
  • the high-speed mixing gas flows from an outlet 32 of the first-stage annular flow path 24 to an inlet of a plurality of communication flow paths 25 connected to the annular flow path 24.
  • the inlet port 31 of the second-stage annular flow path 24 from the outlet port 29 of the communication flow path, and enters the annular flow path 24 through the annular flow path 24.
  • the mixed gas that has entered from different inlet rockers collides with each other.
  • the mixing device 2 installed in the vessel 5 is heated by the electric heater 4, the mixed gas in the mixing channel 21 is uniformly heated by the turbulent motion of the gas. It is done. By adjusting the temperature of the electric heater, the temperature of the mixed gas can be heated to just before the reaction temperature of the reactor.
  • the mixing device 2 and the container 6 are made of a metal, ceramic, or the like that can withstand high temperatures.
  • the mixed gas uniformly heated to a temperature immediately before the reaction temperature is sent to a reaction furnace 1 installed in a container 7 through a pipe.
  • the reactor 1 and the vessel 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature.
  • the mixed gas entering the reactor 1 is further heated by an electric heater 5 in the reactor, and can quickly reach the reaction temperature.
  • burners of oil, natural gas, etc., or microwave heating, induction heating, etc. may be used.
  • a vacuum pump may be connected to the gas outlet of the reactor 1 as in the embodiment shown in FIG.
  • the plurality of gases be of two or more types.
  • the gas A and the gas B are flow-adjusted by the respective mass flows 3 and sent to the mixing device 2 by the pressures of the respective gases themselves.
  • the mass flow 3, mixing device 2, and reactor 1 are connected by piping. Piping is made of metal, ceramic, etc. that can withstand high temperatures.
  • the mixing device 2 is provided with a mixing channel as described in FIGS. 7 to 9 described later in detail.
  • Each gas enters the tank 26 on the supply side from the supply flow path 22 of the mixing device 2.
  • the gas colliding in the tank 26 passes through the inlets 28 of the plurality of communication passages 25 connected to the tank 26 and flows out of the outlets 29 of the communication passages.
  • the first stage enters the annular channel 24 from the inlet 31 of the annular channel 24, collides with the wall of the annular channel 24, and enters from a different inlet 31.
  • the gases collide with each other.
  • the high-speed gas flows from the outlet 32 of the first annular passage 24 to the inlet 28 of the plurality of communication passages 25 connected to the annular passage 24.
  • step 27 The gas colliding with the inner surface of the tank 27 is discharged through the discharge channel 23.
  • the mixing device 2 installed in the vessel 6 is heated by an electric heater 4 or the like, the gas A and the gas B in the mixing channel 21 are caused by the gas turbulent motion. It is evenly heated.
  • the reaction temperature of gas A and gas B differ by independent temperature control of gas A and gas B electric heaters. It can be heated up to.
  • the mixing device 2 and the container 6 are made of a metal, ceramic or the like that can withstand the high temperature of the electric heater 14.
  • Gas A and Gas B which have been independently heated up to just before the optimal temperature for the reaction in the reactor, are sent to the reactor 1 installed in the vessel 7 through the piping.
  • the reactor 1 and the vessel 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature.
  • the gas A and gas B that have entered the reactor 1 are further heated by the electric heater 5 in the reactor and can reach the reaction temperature to the speed and force. .
  • thermo power from a partner such as oil or natural gas, or microwave heating or induction heating. Ray.
  • the reaction gas is discharged out of the reaction furnace 1 by the pressure of the gas itself.
  • the embodiment shown in FIG. 6 is the same as the embodiment shown in FIG. 5 except that a vacuum pump 8 is connected to the gas outlet of the reactor 1. Otherwise, the embodiment shown in FIG. 5 Same as the embodiment described in FIG.
  • the mass flow 3, the mixing device 2, the reaction furnace 1, and the vacuum pump 8 are connected by piping and run. Piping is made of metal, ceramic, etc. that can withstand high temperatures.
  • the gas A and gas B can be easily mixed with the mass flow 3. It can be flowed to the joint device 2 and the reaction furnace 1.
  • the reaction gas is sucked out of the reaction furnace by the vacuum pump 8.
  • reaction channel is used because the reaction takes place in the channel, but the configuration of the channel is mixed. It is similar to a channel.
  • a mixing channel will be described, but if the mixing channel is replaced with a reaction channel, the description of the reaction channel will be made.
  • FIG. 7 is a perspective view of a case where the mixing channel used in the apparatus of the above-mentioned embodiments of the present invention is manufactured by piping.
  • Tubing is made of, for example, metal or ceramic.
  • the mixing device 2 of the present embodiment includes a mixing channel 21, a supply channel 22 for supplying gas to the mixing channel 21, and a discharge channel 23 for discharging the gas.
  • the mixing flow path 21 includes an annular flow path 24 and a communication flow path 25, a tank 26 for introducing gas from the supply flow path 22 into the communication flow path 25, and a communication flow path. 25 Tank for introducing gas from 5 into discharge channel 23 Yes.
  • Each of the annular flow paths is provided with an inlet 31 and an outlet 32 of the annular flow path, and the inlet 31 is connected to an outlet 29 of the communication flow path.
  • the inflow port 28 of the communication flow path is connected to the outflow port 32 of the flow path.
  • annular channels Any number of one or more annular channels may be used.
  • the number of communication channels may be any number of 2 or more.
  • the one shown in FIG. 7 uses 5 annular passages and 6 communication passages.
  • the annular flow path is 2 and the communication flow path is 6 and the one in FIG. 9 is the annular flow path 1 and the communication flow path is 4. Review using
  • FIG. 8 is a view showing a gas mixing device and a gas mixing device used in a gas reaction device according to an embodiment of the present invention, which are manufactured by blocking the mixing channel.
  • the mixing channel is manufactured by sequentially connecting the member 51 to the member 58.
  • the members 54 and 56 are cylindrical members as shown in the figure, but a convex portion is provided in the center of the adjacent members 55 and 57, and the other
  • the annular flow paths 24, 24 are formed by the members adjacent to each other.
  • Each of the members 53, 55, and 57 is provided with a communication channel 25 having an inlet 28 and an outlet 29. Further, the members 57 and 58 form the supply-side tank 26, and the members 51, 52 and 53 form the discharge-side tank 27.
  • the inflow port 28 of the communication channel 25 of the member 53 becomes the outlet 32 of the annular channel 24 formed by the members 53, 54, 55, and the connection of the member 55.
  • the outlet 29 of the passage 25 is to be the inlet 31 of the annular passage.
  • the inlet 28 of the communication flow path 25 of the member 55 becomes the outlet 32 of the annular flow path 24 formed by the members 55, 56, 57.
  • the outlet 29 of the communication channel 25 of the member 57 serves as the inlet 31 of the annular channel.
  • Fig. 9 shows a gas mixing device used in one embodiment of the present invention, in which a mixing channel used in a gas reaction device was partially made into a tube and partially made into a block.
  • the mixing flow path is manufactured by sequentially connecting members 51 to 50 to the member 60.
  • the member 56 is a cylindrical member as shown in the figure, a convex portion is provided at the center of the adjacent member 57, and this and the other adjacent member 5 are provided. 5 Tsu by the annular channel 2 4 that have One Do Ni Let 's is that is formed.
  • the members 53, 55, 57, and 59 are provided with connection holes 30 for communicating with the communication flow passages. Further, the members 59 and 60 form a tank 26 force S on the supply side, and the members 51, 52 and 53 form a tank 27 on the discharge side.
  • the member 54 and the member 58 serve as a communication channel 25 having an inlet 28 and an outlet 29.
  • connection port 30 of the member 55 becomes the outlet port 32 of the annular channel 24, and the connection port 30 of the member 57 becomes the inlet port 31 of the annular channel 24. It is.
  • Fig. 8 In the mixing flow path shown in Fig. 9, the method of engraving the flow path in a material such as ceramic or metal, squeezing the metal plate, A method of cooling and solidifying fluids such as foreign matter and glass by using a mold, etc., excluding only the space in the flow path. A fluid such as ceramics is pressed and solidified from the outside except for the space in the channel, dried, or sintered, and then solidified. There is a method of forming a flow path by using such a method. In addition, in the configuration shown in Fig. 9, a part of the pipe is used to facilitate the manufacture of the communication channel. This makes it possible to mass-produce the mixing flow path and reduce the cost of the apparatus.
  • the gas reactor 12 and the mass flow 13 are connected by piping and run.
  • the flow rate of gas A is adjusted by the mass flow 13, sent to the gas reactor 12 by the pressure of the gas itself, and calorifically heated by the electric heater 14. It is.
  • the electric heater 14 is temperature-controlled by a heater control unit 15.
  • the reaction gas A from the gas reactor 12 is supplied to the point of use by piping or the like.
  • the piping is made of metal, ceramic, etc. that can withstand high temperatures.
  • the reaction gas generated by the gas reaction device shown in FIG. 11 is supplied to the material surface of the object 16 in the accumulation chamber 17 to be processed.
  • Form a thin film on the surface of the body 7 to improve strength (abrasion resistance, hardness, etc.) ⁇ improve environmental resistance (corrosion resistance, heat resistance, etc.) Insulation, magnetism, etc.) can be imparted.
  • the reaction gas or the N 2 (nitrogen), nitride of N 2 (nitrogen) and NH 3 (A down mode Yoo A) mixed Ri by the reaction gas to be processed,
  • the film can be formed, and the strength of parts and tools can be improved. It can also be used for the formation of nitride films on semiconductor wafers.
  • N 2 (nitrogen) and Ar (A Le Gore-down), etc. of the reaction gas was or, N 2 (nitrogen), Ar (A Le Gore-down), CF 4 (Te door La full O Russia menu ) And SF 6 (sulfur hexafluoride) can be used to clean the surface of the object to be treated, and the surface of components and tools can be cleaned. can do . In addition, cleaning of the surface of semiconductor wafers and glass substrates can be performed.
  • Ar Ri by the and (A Le Gore-down) and CH 4 this Ru use physicians the reaction gas of the mixed gas of (meth emissions), etc., part product This will allow for some carburizing of tooling Abrasion resistance Surface hardening becomes possible.
  • H 2 0 water
  • Ru Oh H 2 0 (water) and H 2 (hydrogen), and water (H 2 0)
  • Si (C 2 H 5 0) 4 Te preparative La et key Sorted sheet run-) reaction gas forces these are ⁇ e Doha chromatography, etc. as a protective film for a semiconductor, insulating film, etc. functions It is possible to form a thin film having the following properties.
  • the gas reactor 12 and the mass flow 13 are connected by piping.
  • the flow rate of the gas A is adjusted by the mass flow 13, sent to the gas reactor 12 by the pressure of the gas itself, and added by the electric heater 14. It gets heated.
  • the electric heater 14 is temperature-controlled by a heater control unit 15.
  • the reaction gas A heated to the reaction temperature in the gas reaction device 12 is supplied to the accumulation chamber 17 through the pipe by the pressure of the gas itself, and is supplied to the accumulation chamber 17.
  • the object is sent up to the object 16 set to. Piping is made of metal, ceramic, etc. that can withstand high temperatures. In the accumulation chamber 17, since heating of the gas is not particularly required, the surface of the object 16 can be reformed as it is. For this reason, the object 16 can be surface-modified at a low temperature.
  • the accumulation chamber 17 can be manufactured even if it is not made of a high-temperature-resistant material such as the container 11, and it is not always necessary to maintain a vacuum degree. Since a reactor is not required, the energy consumed in the reactor at the same time is not required.
  • the reaction gas is exhausted out of the accumulation chamber 17 by the pressure of the gas itself.
  • the gas A enters the tank 26 on the supply side from the supply flow path 22 of the gas reaction apparatus 12.
  • the gas A colliding in the tank 26 passes through the inflow ports 28 of the plurality of communication flow paths 25 connected to the tank 26, and flows out of the outflow port 2 of the communication channel.
  • the liquid From the inlet 31 of the first annular passage 24, the liquid enters the annular passage 24 from the inlet 31, collides with the wall surface of the annular passage 24, and has a different inlet.
  • the high-speed gas is supplied from the outlet 32 of the first annular flow path 24 to the inlet 2 of the plurality of non-connected flow paths 25 connected to the annular flow path 24. 8 through the outlet of the communication channel 2 9 and the inflow of the second annular channel 24 from the 9
  • the gas A enters the annular channel 24 through the port 31, collides with the wall of the annular channel 24, and the gas A enters from a different inlet. .
  • This is repeated in the same manner to pass through the inflow ports 28 of the plurality of communication flow paths 25 connected to the final annular flow path 24, and through the outflow ports 29 of the communication flow paths.
  • the gas A colliding with the inner surface of the tank 27 is discharged from the discharge channel 23.
  • the gas A in the flow path 21 becomes impinging turbulent motion of the gas.
  • the electric heater 14 is controlled to a temperature appropriate for the reaction by the heater control unit 15.
  • the gas reactor 12 and the container 11 are made of metal, ceramic, etc., which can withstand the high temperature of the electric heater 14.
  • the reactivity of gas A can be controlled by adjusting the number of stages in the annular flow path and the temperature of the electric heater.
  • heat from a burner such as oil or natural gas, or microwave heating or induction heating may be used. If it is not particularly necessary to control the temperature of the reaction gas, various exhaust heats from engines, fuel cells, and other power sources can be used.
  • the embodiment described in Fig. 13 is the same as the embodiment described in Fig. 12 except that a plurality of accumulation chambers 17 are provided in the embodiment described in Fig. 12.
  • FIG. 14 The embodiment described in FIG. 14 is the same as the embodiment shown in FIG. This is a system that enables the surface modification of the object 16 even if the accumulation chamber 17 is omitted by using the object 16.
  • a reaction gas from a gas reactor 12 is directly supplied to the inner surface of a workpiece 16 such as a single pipe or a plurality of pipes to improve the inner surface of the pipe.
  • Quality, and the strength (abrasion resistance, hardness, etc.) of only the necessary parts ⁇ Improve the environmental resistance (corrosion resistance, heat resistance, etc.) and improve the function (conductive, insulating) , Magnetism, etc.). According to this method, it becomes possible to make the surface modification selectively only in the portion that requires the function or the function, if the accumulation chamber 17 is not required.
  • the gas reaction apparatus of the embodiment shown in FIGS. 11 to 14 is provided with the gas reaction flow path shown in FIG. 10 and FIG. 10. .
  • the configuration of the gas reaction channel is the same as the configuration of the mixing channel used in the gas mixing device.
  • the situation in which gas flows through the inside is the same as that described for the embodiment of the gas mixing apparatus described in FIGS. 1 to 6. .
  • the gas mixing device, the gas reaction device, and the surface reforming device according to the present invention are used as devices for mixing and reacting gases in various applications, and are used to reform the surface of a material.
  • Gas mixing equipment, gas reaction equipment, semiconductor wafers, glass substrates, etc. which are particularly useful in chemical reaction processes and semiconductor manufacturing processes. It is suitable for a surface reforming device used for surface treatment of parts and for surface treatment of parts and tools.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Cette invention se rapporte à un mélangeur de gaz qui est capable de produire un gaz mélangé ou un gaz de réaction chauffé uniformément et mélangé uniformément ; ainsi qu'à un réacteur à gaz. Ce mélangeur de gaz ou ce réacteur à gaz se caractérise en ce qu'il comprend un conduit d'écoulement mélangeur par un conduit d'écoulement annulaire communiquant circonférentiellement, par plusieurs orifices d'écoulement entrant et plusieurs orifices d'écoulement sortant formés dans le conduit d'écoulement annulaire, pour que leurs positions dans le conduit d'écoulement annulaire soient décalées circonférentiellement ; et plusieurs conduits d'écoulement de communication communiquant avec les orifices d'écoulement entrant ou les orifices d'écoulement sortant formés dans le conduit d'écoulement annulaire ; et un conduit d'écoulement d'alimentation et un conduit d'écoulement de distribution pour le fluide qui communiquent avec le conduit d'écoulement mélangeur. En outre, un dispositif modificateur de surface se caractérise par le raccordement de ce réacteur à gaz à une chambre d'accumulation.
PCT/JP2003/002722 2002-03-08 2003-03-07 Melangeur de gaz, reacteur a gaz et dispositif modificateur de surface Ceased WO2003076059A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003221331A AU2003221331A1 (en) 2002-03-08 2003-03-07 Gas mixer, gas reactor and surface modifying device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002109776A JP2005230586A (ja) 2002-03-08 2002-03-08 ガス混合装置及びガス反応装置
JP2002/109776 2002-03-08
JP2002334332A JP2005230587A (ja) 2002-10-15 2002-10-15 ガス反応装置および表面改質装置
JP2002/334332 2002-10-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030526A1 (fr) * 2004-09-15 2006-03-23 Nomura Reinetsu Yugengaisha Échangeur de chaleur et dispositif de génération de vapeur surchauffée utilisant celui-ci

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101635122B1 (ko) * 2009-09-04 2016-06-30 타이요 닛폰 산소 가부시키가이샤 태양 전지용 셀렌화 수소 혼합 가스의 공급 방법 및 공급 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101729A (ja) * 1981-12-11 1983-06-17 Mitsui Toatsu Chem Inc 流体混合装置
JPH07294162A (ja) * 1995-01-11 1995-11-10 Shuzo Nomura 熱交換装置
JPH10146523A (ja) * 1996-09-20 1998-06-02 Nippon Shokubai Co Ltd 気液分散装置及び気液接触装置並びに廃水処理装置
JPH10180066A (ja) * 1996-12-26 1998-07-07 Jiinasu:Kk 微粒化方法及びその装置
JP2002031496A (ja) * 2000-07-19 2002-01-31 Shuzo Nomura 熱交換装置
JP2003004388A (ja) * 2001-06-19 2003-01-08 Shuzo Nomura ヒートポンプ式空調機及び冷温風発生方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101729A (ja) * 1981-12-11 1983-06-17 Mitsui Toatsu Chem Inc 流体混合装置
JPH07294162A (ja) * 1995-01-11 1995-11-10 Shuzo Nomura 熱交換装置
JPH10146523A (ja) * 1996-09-20 1998-06-02 Nippon Shokubai Co Ltd 気液分散装置及び気液接触装置並びに廃水処理装置
JPH10180066A (ja) * 1996-12-26 1998-07-07 Jiinasu:Kk 微粒化方法及びその装置
JP2002031496A (ja) * 2000-07-19 2002-01-31 Shuzo Nomura 熱交換装置
JP2003004388A (ja) * 2001-06-19 2003-01-08 Shuzo Nomura ヒートポンプ式空調機及び冷温風発生方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030526A1 (fr) * 2004-09-15 2006-03-23 Nomura Reinetsu Yugengaisha Échangeur de chaleur et dispositif de génération de vapeur surchauffée utilisant celui-ci
US7823543B2 (en) 2004-09-15 2010-11-02 Nomura Reinetsu Yugengaisha Heat exchanging apparatus and superheated steam generating apparatus using the same

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TW200402325A (en) 2004-02-16

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