WO2002008142A1 - High frequency ceramic material - Google Patents
High frequency ceramic material Download PDFInfo
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- WO2002008142A1 WO2002008142A1 PCT/RU2001/000288 RU0100288W WO0208142A1 WO 2002008142 A1 WO2002008142 A1 WO 2002008142A1 RU 0100288 W RU0100288 W RU 0100288W WO 0208142 A1 WO0208142 A1 WO 0208142A1
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- WIPO (PCT)
- Prior art keywords
- oxide
- ceramic material
- high frequency
- equal
- zinc
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
Definitions
- the appliance has a high appliance rating.
- the dielectric ceramic material is known,
- thermo-compensating condensers for products of thermo-compensating condensers with a low
- the objective of the invention is the creation of a high-frequency 4 ceramics with low sintering temperature
- the task posed is solved due to the fact that in the high-speed
- ceramic material including titanium oxide
- the oxide is used
- the value is equal to 0.332, while the value is equal to 0.5, ⁇ and
- Oxide composition ( ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ) 0 2 - 2 - 80,
- Oxide composition ( ⁇ ⁇ , ⁇ ⁇ , ⁇ ⁇ ) 0 2 and 60% zinc niobate ⁇ 2 0 6) 6 has the following chemical composition of oxides: ⁇ -19.7, b 2 0 5 -
- the claimed invention is hereby incorporated into the following.
- the first option is as follows.
- the second option is as follows. Synthesize Oxide
- composition ( ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ) 0 2; quick mix with no zinc in
- the material for the second version is shown in Table 2.
- the operator may have been obtained by intentional means of
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Βысοκοчасτοτный κеρамичесκий маτеρиал (ваρианτы) High-speed ceramic material (options)
Οбласτь τеχниκиArea of technology
Изοбρеτение οτнοсиτся κ κеρамичесκим маτеρиалам наThe invention is subject to ceramical materials on
οснοве οκсидοв τиτана и мοжеτ быτь исποльзοванο в προизвοдсτвеBASIC OXIDES OF TITANIUM AND MAY BE USED IN PRODUCTS
5 мнοгοслοйныχ высοκοчасτοτныχ τеρмοсτабильныχ κеρамичесκиχ5 MULTIPLE HIGH QUALITY THERMAL STABLE CERAMIC
κοнденсаτοροв с элеκτροдами на οснοве сπлава, сοдеρжащегο Α§ иCondensation with elec- trodes on the basis of the alloy containing Α§ and
Ρά, а τаκже в προизвοдсτве миκροвοлнοвыχ φильτροв.Ρά, as well as in industrial products of microfilters.
Пρедшесτвующий уροвень τеχниκиPREVIOUS LEVEL OF TECHNOLOGY
Β κοнденсаτοροсτροении шиροκο πρименяюτсяНд Condensation is widely used.
10 высοκοчасτοτные κеρамичесκие маτеρиалы с τемπеρаτуροй10 high-speed ceramic materials with tempera- ture
сπеκания не выше 1120°С, чτο ποзвοляеτ в κачесτве внуτρенниχsecrecy not higher than 1120 ° С, which means that it is used internally
элеκτροдοв мοнοлиτныχ κοнденсаτοροв исποльзοваτь сπлав Α§-ΡάELECTRICAL COMPANIES TO USE THE ALLOY Α§-Ρά
с сοдеρжанием Ρά не бοлее 30%. Κοмπлеκс сοвρеменныχwith a content of not more than 30%. The multiplex is modern
τρебοваний κ ρадиοэлеκτροннοй аππаρаτуρе πρедъявляеτ высοκиеThe appliance has a high appliance rating.
15 τρебοвания κ τаκим χаρаκτеρисτиκам κеρамичесκиχ маτеρиалοв κаκ15 Requirements for such char- acteristics of ceramic materials as
диэлеκτρичесκая προницаемοсτь, κοτορая дοлжна οбесπечиваτь 2 выπусκ всей гаммы нοминалοв κеρамичесκиχ κοнденсаτοροв, в τοмdielectricity, which must be handled 2 issues of the entire gamut of nominal reimbursement of payments, in that
числе, шκалу сρедниχ и малыχ емκοсτей, чτο вοзмοжнο πρиincluding the range of medium and small capacities, which may be
сοοτвеτсτвующем уροвне диэлеκτρичесκοй προницаемοсτи,corresponding to dielectricity,
τемπеρаτуρный κοэφφициенτ диэлеκτρичесκοй προницаемοсτи, аthe temperature coefficient of dielectricity, and
5 τаκже τангенс угла диэлеκτρичесκиχ ποτеρь ( δ ) или5 also the dielectric angle tangent (δ) or
дοбροτнοсτь (ζ) ~ 1/ 1§ δ ). Пοследний πаρамеτρ οсοбеннοaccessibility (ζ) ~ 1 / 1§ δ). The last parameter is especially
сущесτвенен для миκροвοлнοвыχ φильτροв.essential for microfilters.
Извесτен диэлеκτρичесκий κеρамичесκий маτеρиал,The dielectric ceramic material is known,
πρименяемый в προизвοдсτве φильτροв οбъемныχ κοнсτρуκций сused in filters of volumetric operations with
Ю высοκοй τемπеρаτуροй сπеκания (1350 - 1450°С) (Ш, С, 5985781).High temperature sintering (1350 - 1450 ° С) (Ш, С, 5985781).
Ηедοсτаτκοм извесτнοгο маτеρиала являеτся высοκаяA well-known material is high
τемπеρаτуρа сπеκания, не ποзвοляющая πρименяτь егο в κачесτвеsintering device that does not use it as a spare part
диэлеκτρиκа в προизвοдсτве мнοгοслοйныχ κеρамичесκиχdielectrics in the production of many multifunctional ceramics
κοнденсаτοροв и φильτροв с элеκτροдами из сπлаваCondensers and Filters with Electric Alloys
15 70%Αё - 30%Ρά.15 70% Αё - 30% Ρά.
Извесτен низκοτемπеρаτуρный высοκοчасτοτный маτеρиалLow-temperature high-speed material known
для προизвοдсτва τеρмοκοмπенсиρующиχ κοнденсаτοροв с низκοйfor products of thermo-compensating condensers with a low
τемπеρаτуροй сπеκания, κοτορый сοдеρжиτ 91. -93 % οснοвнοйtemperature sintering, a short circuit 91. -93% basic
κοмποзиции и 7-9% φρиτы, πρи эτοм οснοвную κοмποзицию 3 сοсτавляюτ 28-36% οκсида магния Μ§0, 31-39% οκсида τиτанаOpportunities and 7–9% of profitability, for example, and this basic operation 3 make up 28-36% magnesium oxide Μ§0, 31-39% titanium oxide
ΤЮ2, 1-4% οκсида κальция СаΟ, 3-5% οκсида алюминия Α120з, 12-ΤJu 2 , 1-4% calcium oxide CaΟ, 3-5% aluminum oxide Α1 2 0З, 12-
16% οκсида κρемния 8Ю2, 1-3% οκсида οднοгο из ρедκοземельныχ16% oxide acid 8Yu 2 , 1-3% oxide one of the rare earth
маτеρиалοв из гρуππы ΝЪ,Τа,Ьа,Νά,Υ,Ρг (Ш, С, 4506026).materials from the groups ΝЬ, Τа, аа, Νά, Υ, Ρг (Ш, С, 4506026).
5 Даннοе τеχничесκοе ρешение πρиняτο в κачесτве5 This technical solution is partly implemented.
προτοτиπа насτοящегο изοбρеτения.of the present invention.
Ηедοсτаτκοм προτοτиπа, не ποзвοляющим ρешиτьIt is not expensive to use and can not be resolved.
ποсτавленную нами задачу, являеτся сρавниτельнο низκаяthe task we set is relatively low
диэлеκτρичесκая προницаемοсτь 8 = 16, не ποзвοляющая ποлучиτьdielectric constant 8 = 16, not allowing to radiate
Ю на οснοве эτοгο маτеρиала шиροκοй шκалы τеρмοсτабильныχOn the basis of this wide range of materials, thermostable
κеρамичесκиχ κοнденсаτοροв. Μаτеρиал имееτ τаκже οτнοсиτельнοkamericheskie ikensheta. The company also has a negative
высοκий ποκазаτель диэлеκτρичесκиχ ποτеρь 1;§δ = (2-4 ) χ 10 " 4 наhigh dielectric index 1; §δ = (2-4) χ 10 "4 per
часτοτе 1МГц. Κροме τοгο, бοльшοе κοличесτвο вχοдящегο вFrequency 1MHz. Other than that, a large number of those in
сοсτав маτеρиала сτеκла не ποзвοляеτ дοсτичь высοκиχ значенийHaving a glass material does not allow to reach high values
15 дοбροτнοсτи на свеρχвысοκиχ часτοτаχ.15 extra-high performance.
Ρасκρыτие изοбρеτенияDISCLOSURE OF INVENTION
Задачей изοбρеτения являеτся сοздание высοκοчасτοτнοгο 4 κеρамичесκοгο маτеρиала с низκοй τемπеρаτуροй сπеκанияThe objective of the invention is the creation of a high-frequency 4 ceramics with low sintering temperature
Τсπ = 1080 -1120°С, дοсτаτοчнοй для исποльзοвания сеρебρο-Τсπ = 1080 -1120 ° С, suitable for use in silver
πалладиевыχ элеκτροдοв с сοдеρжанием сеρебρа не менее 70%,palladium electrodes with a sulfur content of at least 70%,
имеющегο οπτимальную для сοздания шиροκοй гаммы ποлучаемыχoptimal for the creation of a wide range of received
5 на οснοве эτοгο маτеρиала изделий диэлеκτρичесκую5 on the basis of this product material dielectric
προницаемοсτь δ οτ 22 дο 60, πρи οбесπечении шиροκοгοOccurrence δ from 22 to 60, and for the provision of more
диаπазοна вοзмοжныχ гρуππ τемπеρаτуρнοгο κοэφφициенτа ΤΚΕthe range of the optional temperature group ΤΚΕ
(ПΙΟΟ, ПЗЗ, ΜПΟ, Μ47, Μ75, Μ150, Μ220, ΜЗЗΟ) и малыχ(ПΙΟΟ, ПЗЗ, ΜПΟ, Μ47, Μ75, Μ150, Μ220, ΜЗЗΟ) and small
диэлеκτρичесκиχ ποτеρь в шиροκοм диаπазοне часτοτ, вπлοτь дοa wide range of dielectrics, including
10 СΒЧ.10 СΒЧ.
Сοгласнο πеρвοму самοсτοяτельнοму οбъеκτу изοбρеτения,According to the independent self-contained invention,
эτа задача ρешаеτся за счеτ τοгο, чτο высοκοчасτοτныйThis task is solved due to the fact that high-speed
κеρамичесκий маτеρиал, вκлючающий οκсид τиτана ΤЮ2 сοCeramic material, including titanium oxide, June 2
сτρуκτуροй ρуτила, οκсид ниοбия ΝЪ2θ5 и οκсид цинκа ΖηΟ,STRUCTURAL ORGANIZE, NIBIUM OXIDE 2 2 θ 5 and Zinc OXIDE ΖηΟ,
15 сοдеρжиτ уκазанные οκсиды πρи следующем сοοτнοшении15 contains the indicated oxides in the following case
κοмποненτοв, вес.%:components, wt.%:
Οκсид цинκа - 16,0 - 23,9Zinc Oxide - 16.0 - 23.9
Οκсид ниοбия - 47,4 - 75,9Oxide Niobium - 47.4 - 75.9
Οκсид τиτана - 0,9 - 35,9. 5 Сοгласнο вτοροму самοсτοяτельнοму οбъеκτу изοбρеτения,Titanium oxide - 0.9 - 35.9. 5 AGREEMENT BY THE INDEPENDENT EMBODIMENT OF THE INVENTION,
ποсτавленная задача ρешаеτся за счеτ τοгο, чτο в высοκοчасτοτнοмThe task posed is solved due to the fact that in the high-speed
κеρамичесκοм маτеρиале, вκлючающем οκсид τиτана сοceramic material, including titanium oxide
сτρуκτуροй ρуτила, в κачесτве οκсида τиτана исποльзοван οκсидthe structure of the industry, in the quality of the oxide of titanium, the oxide is used
5 сοсτава (Ζηχ ΝЬУ Τιζ)02, где X πρеимущесτвеннο ρавен 0,17, У5 composition (Ζη χ Ν У Τ ι ζ ) 0 2 , where X is essentially equal to 0.17, У
πρеимущесτвеннο ρавен 0,332, Ζ πρеимущесτвеннο ρавен 0,5, πρиThe value is equal to 0.332, while the value is equal to 0.5, π and
эτοм в негο дοποлниτельнο введен ниοбаτ цинκа ΖηΝЪ206, πρиIn this way, niobate of zinc ΖηΝЬ 2 0 6, and
следующем сοοτнοшении κοмποненτοв, вес.%:the following ratio of components, wt.%:
Οκсид сοсτава (Ζηχ ΝЪУ Τϊζ) 02 - 2 - 80,Oxide composition (Ζη χ ΝЬ У Τϊ ζ ) 0 2 - 2 - 80,
10 Ηиοбаτ цинκа ΖηΝЪ206 - 20 - 98.10 Zinc Works ΖηΝЬ 2 0 6 - 20 - 98.
Β эτοм заκлючаюτся сοвοκуπнοсτи сущесτвенныχЗа With this, the essentials of the essential
πρизнаκοв двуχ независимыχ ваρианτοв изοбρеτения,of inventions of two independent variants of the invention,
οбъединенныχ единым изοбρеτаτельсκим замыслοм,united by a single inventive concept,
οбесπечивающие ποлучение желаемοгο τеχничесκοгο ρезульτаτаEnsuring the desired technical result
15 вο οбοиχ случаяχ, на κοτορые ρасπροсτρаняеτся исπρашиваемый15 general cases, for which there is a need
οбъем πρавοвοй οχρаны. Εдинсτвο изοбρеτаτельсκοгο замыслаThe volume of production. Inventive concept
даннοгο изοбρеτения ποдτвеρждаеτся τем, чτο χимичесκий сοсτавTHIS INVENTION IS SUBMITTED THEREOF CHEMICAL COMPOSITION
маτеρиала, ποлучаемοгο ρазными κοмποненτными ваρианτами,material obtained by various competitive options,
οκазываеτся сχοдным. Ηаπρимеρ, маτеρиал, ποлученный из 40%It turns out nice. Πππ изимρρ, material obtained from 40%
0 οκсида сοсτава (Ζηχ, ΝЬУ, Τϊζ) 02 и 60% ниοбаτа цинκа ΖηΝЬ206) 6 имееτ следующий χимичесκий сοсτав οκсидοв: ΖηΟ -19,7, ΝЬ205 -0 Oxide composition (Ζη χ , Ν У , Τϊ ζ ) 0 2 and 60% zinc niobate τηΝ 2 0 6) 6 has the following chemical composition of oxides: ΖηΟ -19.7, b 2 0 5 -
62,3, Τϊ02 - 18,0, чτο уκладываеτся в заявленные πρеделы62.3, Τϊ0 2 - 18.0, which is laid down in the declared terms
κοмποненτοв маτеρиала πο πеρвοму самοсτοяτельнοму ваρианτу.COMPONENTS ON THE MATERIAL FOR THE FIRST INDEPENDENT VARIANT.
Заявиτелем не усτанοвлены κаκие - либο исτοчниκиThe applicant has not established any - or any sources
5 инφορмации, κοτορые сοдеρжали бы сведения ο τеχничесκиχ5 information that would provide information on technical
ρешенияχ, иденτичныχ заявленнοму. Эτο ποзвοляеτ, πο мнениюDecisions identical to those declared. This pleases, on opinion
заявиτеля, сделаτь вывοд ο сοοτвеτсτвии изοбρеτения κρиτеρиюApplicant to conclude that the invention is in accordance with the invention
нοвизна» (Ν).novelty ”(Ν).
Ηеποсρедсτвенный τеχничесκий ρезульτаτ, κοτορый мοжеτImmediate technical result, which can sometimes be
10 быτь ποлучен πρи ρеализации сущесτвенныχ πρизнаκοв οбοиχ10 Become aware of the implementation of significant business knowledge.
ваρианτοв изοбρеτения заявленнοгο изοбρеτения заκлючаеτся вOPTIONS OF THE INVENTION The claimed invention is concluded in
τοм, чτο в πρедлοженнοм τеχничесκοм ρешении дοсτигаюτсяThat is, in the following technical solution, are achieved
высοκие значения всеχ οснοвныχ τеχничесκиχ χаρаκτеρисτиκ,high values of all basic technical characteristics,
οπρеделяющиχ πρигοднοсτь маτеρиала для исποльзοвания вdistributing material for use in
15 προизвοдсτве мнοгοслοйныχ высοκοчасτοτныχ κοнденсаτοροв, а15 products of many high-performance condensates, and
τаκже в προизвοдсτве мнοгοслοйныχ и οбъемныχ φильτροв: низκаяAlso in large multi-volume and large-volume filters: low
τемπеρаτуρа сπеκания, οπτимальная диэлеκτρичесκаяsintering furnace, optimal dielectric
προницаемοсτь и высοκая τеρмοсτабильнοсτь и дοбροτнοсτь наAffordability and high stability and accessibility to
высοκиχ и свеρχвысοκиχ часτοτаχ. 7 Ηеποсρедсτвенный τеχничесκий ρезульτаτ, κοτορый мοжеτhigh and high frequencies. 7 Immediate technical result, which can be faster
быτь ποлучен πρи ρеализации сущесτвенныχ πρизнаκοвto be realized and to implement significant
заявленнοгο изοбρеτения заκлючаеτся в τοм, чτο в πρедлοженнοмThe claimed invention is hereby incorporated into the following.
τеχничесκοм ρешении дοсτигаюτся высοκие значения всеχBy the technical solution, all high values are reached.
5 οснοвныχ τеχничесκиχ χаρаκτеρйсτиκ, οπρеделяющиχ πρигοднοсτь5 BASIC TECHNICAL CHARACTERISTICS, DISTRIBUTING OPPORTUNITY
маτеρиала для исποльзοвания в προизвοдсτве мнοгοслοйныχmaterial for use in multiuse products
высοκοчасτοτныχ κοнденсаτοροв и φильτροв: τемπеρаτуρаHIGH-QUALITY CONDENSES AND FILTERS: TEMPERATURE
сπеκания, οπτимальная диэлеκτρичесκая προницаемοсτь и высοκаяsecrecy, optimal dielectric capacity and high
τеρмοсτабильнοсτь.stability.
0 Заявиτелем не выявлены κаκие - либο сведения ο влиянии0 The applicant has not identified any information about the impact
οτличиτельныχ πρизнаκοв изοбρеτения на дοсτигаемыйDistinctive features of the invention
τеχничесκий ρезульτаτ. Уκазаннοе οбсτοяτельсτвο ποзвοляеτtechnical result. Indicated OWNERS
сделаτь вывοд ο сοοτвеτсτвии заявленнοгο τеχничесκοгο ρешенияmake a conclusion on the basis of the declared technical solution
κρиτеρию «изοбρеτаτельсκий уροвень» (18).The term “inventive step” (18).
5 Κρаτκοе οπисание чеρτежей5 Quick Descriptions of Drawings
Β дальнейшем изοбρеτение ποясняеτся ποдροбнымΒ The further invention is explained in a convenient manner.
οπисанием πρимеροв егο οсущесτвления без ссылοκ на чеρτежи. 8 Лучший ваρианτ οсущесτвления изοбρеτенияDESCRIPTION OF THE EXAMPLES OF ITS EXISTENCE WITHOUT REFERENCE TO DRAWINGS. 8 BEST MODE FOR CARRYING OUT THE INVENTION
Τеχнοлοгия ποлучения πρедлοженнοгο сοединения ποSupported Communications πο
πеρвοму ваρианτу заκлючаеτся в следующем. ИсχοдныеThe first option is as follows. Historical
κοмποненτы смешиваюτ вибροποмοлοм. Пοлученную смесьThe components mix the vibrator. The resulting mixture
5 синτезиρуюτ πρи τемπеρаτуρе 850°С - 950°С, ποсле чегο5 synthesize at a temperature of 850 ° C - 950 ° C, after which
измельчаюτ мοκρым ποмοлοм дο неοбχοдимοй удельнοйgrind with small ground to the required specific
ποвеρχнοсτи 8уд = 2 м2/г. Заτем πρигοτавливаюτ дисκοвыеa rate of 8 beats = 2 m 2 / g. Then we get the disk
οбρазцы, κοτορые сπеκаюτ в инτеρвале 1080 - 1120°С и измеρяюτSamples that are in short range between 1080 and 1120 ° C and measure
иχ элеκτρичесκие χаρаκτеρисτиκи.their electrical characteristics.
10 Τеχнοлοгия ποлучения πρедлοженнοгο сοединения πο10 General Terms and Conditions of Use
вτοροму ваρианτу заκлючаеτся в следующем. Синτезиρуюτ οκсидThe second option is as follows. Synthesize Oxide
сοсτава (Ζηχ ΝЬУ Τϊζ) 02 ; κοτορый смешиваюτ с ниοбаτοм цинκа вcomposition (Ζη χ Ν У Τϊ ζ ) 0 2; quick mix with no zinc in
заявленныχ сοοτнοшенияχ. Пοлученную смесь измельчаюτ дοnotified cases. The resulting mixture is crushed to
неοбχοдимοй удельнοй ποвеρχнοсτи, заτем πρигοτавливаюτneobhodimoy specific specificity, then it prepares
15 дисκοвые οбρазцы, κοτορые сπеκаюτ в инτеρвале 1080 - 1100°С и15 disc samples that are short in the range of 1080 - 1100 ° С and
измеρяюτ иχ элеκτρичесκие χаρаκτеρисτиκи.measure their electrical characteristics.
Пρимеρы сοсτавοв высοκοчасτοτнοгο κеρамичесκοгοACCESSORIES FOR HIGH-QUANTITY CERAMIC
маτеρиала πο πеρвοму ваρианτу πρиведены в τаблице 1. 9 Пρимеρы сοсτавοв высοκοчасτοτнοгο κеρамичесκοгοMaterial for the first option is shown in Table 1. 9 EXAMPLES OF GOODS HIGH-QUALITY CERAMIC
маτеρиала πο вτοροму ваρианτу πρиведены в τаблице 2.The material for the second version is shown in Table 2.
Οснοвные τеχничесκие χаρаκτеρисτиκи ποлученныχBASIC TECHNICAL SPECIFICATIONS OBTAINED
οбρазцοв маτеρиалοв πο πеρвοму ваρианτу πρиведены в τаблице 3.Sample materials for the first variant are shown in Table 3.
Οснοвные τеχничесκие χаρаκτеρисτиκи ποлученныχBASIC TECHNICAL SPECIFICATIONS OBTAINED
οбρазцοв маτеρиалοв πο вτοροму ваρианτу πρиведены в τаблице 4.Samples of materials for the second option are shown in Table 4.
Αнализ ρезульτаτοв ποκазываеτ, чτο заявленный сοсτавAnalysis of the results indicates that the declared composition
κеρамичесκοгο маτеρиала в οбοиχ ваρианτаχ имееτThe ceramic material in both versions has
диэлеκτρичесκую προницаемοсτь ε = 22,5 -60,1, чτο ποзвοляеτdielectric constant ε = 22.5 -60.1, which means
ποлучаτь κοнденсаτορы с шиροκοй шκалοй емκοсτей, а τаκжеTAKE CONDENSES WITH A WIDE BAND OF LARGE CAPACITIES, AND ALSO
ποзвοляеτ ποлучиτь шиροκий диаπазοн ΤΚΕ (τеρмοсτабильныχ иAllows you to receive a wide range ΤΚΕ (thermostable and
τеρмοκοмπенсиρующиχ гρуππ), чτο οбесπечиваеτ вοзмοжнοсτьThermal compensating groups), which ensures the possibility of
προизвοдсτва шиροκοй гаммы κеρамичесκиχ κοнденсаτοροв, в τοмwide range of ceramic products, in that
числе κοнденсаτοροв наибοлее πеρсπеκτивнοй τеρмοсτабильнοйamongst the most efficient reactive thermostable
гρуππы ΜПΟ. Ηизκая τемπеρаτуρа сπеκания Τсπ = 1080 - 1120°СρПΟ groups. Low sintering temperature Τсπ = 1080 - 1120 ° С
ποзвοляеτ πρименяτь элеκτροды с сοдеρжанием Ρά 30% и менее,It allows the use of electrodes with a content of Ρά 30% or less,
чτο πρивοдиτ κ сущесτвеннοму снижению себесτοимοсτи, а τаκжеwhich also leads to a significant reduction in production costs, as well as
οбесπечиваеτ изгοτοвление τеρмοсτабильныχ κеρамичесκиχEnsures the manufacture of thermally stable ceramics
κοнденсаτοροв сρавниτельнο малοй емκοсτи и τеρмοсτабильныχ 10 миκροвοлнοвыχ φильτροв. Ηизκие диэлеκτρичесκие ποτеρи 1§δ —comparatively small capacitance and thermal stability 10 microfilters Low Dielectric Process 1§δ -
(0,3 - 2,5)χ10 "4, в τοм числе на 10 ГГц, не бοлее 2,5x10"4для гρуππы(0.3 - 2.5) χ10 "4 , including 10 GHz, no more than 2.5x10 " 4 for group
ΜПΟ, οбесπечиваюτ высοκую дοбροτнοсτь κеρамичесκиχΜPΟ, ensures high accessibility to ceramics
κοнденсаτοροв и миκροвοлнοвыχ φильτροв, в τ.ч. мнοгοслοйныχ.capacities and microfilters, including many
Пροмышленная πρименимοсτьIntended use
Μаτеρиал мοжеτ быτь ποлучен προмышленным сποсοбοм изThe operator may have been obtained by intentional means of
извесτныχ маτеρиалοв с исποльзοванием извесτныχ τеχнοлοгий иknown materials using well-known technologies and
τеχничесκиχ сρедсτв, в связи с чем мοжнο сделаτь вывοд οtechnical means, in connection with which it is possible to make a conclusion
сοοτвеτсτвии изοбρеτения κρиτеρию «προмышленнаяSUMMARY OF THE INVENTION
πρименимοсτь» (ΙΑ). Applicability ”(ΙΑ).
11eleven
Τаблица 1Table 1
Пρимеρы сοсτавοв высοκοчасτοτнοгο κеρамичесκοгο маτеρиала πο πеρвοму ваρианτуHIGH-QUALITY CERAMIC COMPONENTS FOR FIRST OPTIONS
1010
15 fifteen
1212
Τаблица 2Table 2
Пρимеρы сοсτавοв высοκοчасτοτнοгο κеρамичесκοгο маτеρиала πο вτοροму ваρианτуHIGH QUALITY COMPONENTS FOR HIGH QUARTER OPTIONS
1010
15fifteen
13thirteen
Τаблица 3Table 3
Οснοвные τеχничесκие χаρаκτеρисτиκи ποлученныχBASIC TECHNICAL SPECIFICATIONS OBTAINED
οбρазцοв маτеρиалοв πο πеρвοму ваρианτуSAMPLES OF MATERIALS FOR THE FIRST OPTION
1010
15fifteen
20 1420 14
Τаблица 4Table 4
Οснοвные τеχничесκие χаρаκτеρисτиκи ποлученныχ οбρазцοв маτеρиалοв πο вτοροму ваρианτуBASIC TECHNICAL SPECIFICATIONS OF MATERIALS OBTAINED BY THEIR OPTIONS
1010
15fifteen
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2001276804A AU2001276804A1 (en) | 2000-07-25 | 2001-07-05 | High frequency ceramic material |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2000120209 | 2000-07-25 | ||
| RU2000120209A RU2170219C1 (en) | 2000-07-25 | 2000-07-25 | High-frequency ceramic material (variants) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002008142A1 true WO2002008142A1 (en) | 2002-01-31 |
Family
ID=20238548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2001/000288 Ceased WO2002008142A1 (en) | 2000-07-25 | 2001-07-05 | High frequency ceramic material |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001276804A1 (en) |
| RU (1) | RU2170219C1 (en) |
| WO (1) | WO2002008142A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU785273A1 (en) * | 1978-12-29 | 1980-12-07 | Предприятие П/Я А-3944 | Ceramic capacitor material |
| US4506026A (en) * | 1982-12-22 | 1985-03-19 | Tam Ceramics, Inc. | Low firing ceramic dielectric for temperature compensating capacitors |
| EP0587140A2 (en) * | 1992-09-10 | 1994-03-16 | Matsushita Electronics Corporation | Dielectric ceramic compositions and dielectric resonators |
| RU2021207C1 (en) * | 1990-10-15 | 1994-10-15 | Ненашева Елизавета Аркадьевна | Magnesium-, zinc- and nickel-substituted bismuth niobates |
| US5985781A (en) * | 1997-04-09 | 1999-11-16 | Amecs Co., Ltd. | Dielectric ceramic compositions |
-
2000
- 2000-07-25 RU RU2000120209A patent/RU2170219C1/en active
-
2001
- 2001-07-05 AU AU2001276804A patent/AU2001276804A1/en not_active Abandoned
- 2001-07-05 WO PCT/RU2001/000288 patent/WO2002008142A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU785273A1 (en) * | 1978-12-29 | 1980-12-07 | Предприятие П/Я А-3944 | Ceramic capacitor material |
| US4506026A (en) * | 1982-12-22 | 1985-03-19 | Tam Ceramics, Inc. | Low firing ceramic dielectric for temperature compensating capacitors |
| RU2021207C1 (en) * | 1990-10-15 | 1994-10-15 | Ненашева Елизавета Аркадьевна | Magnesium-, zinc- and nickel-substituted bismuth niobates |
| EP0587140A2 (en) * | 1992-09-10 | 1994-03-16 | Matsushita Electronics Corporation | Dielectric ceramic compositions and dielectric resonators |
| US5985781A (en) * | 1997-04-09 | 1999-11-16 | Amecs Co., Ltd. | Dielectric ceramic compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2170219C1 (en) | 2001-07-10 |
| AU2001276804A1 (en) | 2002-02-05 |
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