[go: up one dir, main page]

WO2002001297A2 - Procedes pour le traitement de surfaces, objets produits selon ces procedes et utilisation de composes en tant que reactifs clivables photochimiquement - Google Patents

Procedes pour le traitement de surfaces, objets produits selon ces procedes et utilisation de composes en tant que reactifs clivables photochimiquement Download PDF

Info

Publication number
WO2002001297A2
WO2002001297A2 PCT/DE2001/002315 DE0102315W WO0201297A2 WO 2002001297 A2 WO2002001297 A2 WO 2002001297A2 DE 0102315 W DE0102315 W DE 0102315W WO 0201297 A2 WO0201297 A2 WO 0201297A2
Authority
WO
WIPO (PCT)
Prior art keywords
compounds
photochemically
light
hydrophobic
hydrophilic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2001/002315
Other languages
German (de)
English (en)
Other versions
WO2002001297A3 (fr
Inventor
Daniel Schondelmaier
Wolfgang Eberhardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of WO2002001297A2 publication Critical patent/WO2002001297A2/fr
Publication of WO2002001297A3 publication Critical patent/WO2002001297A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Definitions

  • the invention relates to methods for the treatment of surfaces and objects produced using such methods. Furthermore, it relates to the use of compounds as photochemically cleavable reagents.
  • the disadvantage of the methods is a high technical and time expenditure.
  • the object of the invention is therefore to create a technically simple, inexpensive and less time-consuming method for producing regular structures in the nanometer range on surfaces and to create a method for producing a stamp profile.
  • Another object is to provide a method with which a surface with hydrophobic and hydrophilic areas can be produced.
  • the object is achieved according to the invention with the features specified in the characterizing part of claim 1 and starting from the preamble of claim 9 with those in the characterizing part of claim 9, and further starting from the preamble of claim 17 with the im characterizing part of claim 17 specified features. Furthermore, the problem is solved starting from the preamble of claim 25 with the features specified in the characterizing part of claim 25 and starting from the preamble of claim 29 with the features specified in the characterizing part of claim 29, and starting from the preamble of claim 30 with the Features specified in the characterizing part of claim 30.
  • Halogenated alkyl groups are notable for their high reactivity with high-energy light, in particular UV light.
  • the preferred embodiment of the method according to claim 3 brings about a rapid reaction of the compounds used with UV light.
  • a particularly rapid reactivity of the compounds used with UV light is ensured.
  • the advantageous embodiment of the method according to claim 5 causes a high binding affinity of the compounds used with the surface of the materials used. These materials have functional groups on their surface that can bond with the compounds.
  • glass, graphite and aluminum surfaces are preferably coated or treated with compounds which contain Si as Y, since silicon preferably forms a bond with the functional groups or with the surface properties of these materials and the compounds which contain silicon as Y preferably bind to these surfaces.
  • gold surfaces are preferably coated with compounds which contain S as Y, since sulfur reacts preferentially with the surface properties of this material and these compounds which contain S as Y preferably form a bond with this material ,
  • the advantageous embodiment of the method according to claim 8 has the effect that the xenon light source radiates energy-rich light from a wavelength of approximately 250 nm, or the energy-rich light with the aid of a laser, which has a wavelength of 248 nm, for example, can be irradiated.
  • the method according to claim 9 enables the production of a stamp profile in the nanometer range.
  • the compounds of the general formula R-X used form a bond with the surface of the material with which a stamp profile is to be created and are aligned perpendicular to the surface.
  • the molecular length corresponds to the layer thickness that forms on the surface of the material.
  • the bond between R and X is photochemically cleavable.
  • the molecular part X is split off and a depression is formed in the exposed area.
  • a UV-impermeable mask that has cutouts, the irradiation of the high-energy light can be controlled and a defined profile with recesses and elevations can be generated.
  • Executing the method according to claim 10 ensures a high reactivity of the compounds used with the high-energy light.
  • the halogenation of the molecular part R of the compound leads to a strong photochemical reactivity.
  • the advantageous embodiment of the method according to claim 11 brings about a rapid cleavage of the molecular part R by high-energy light.
  • a particularly rapid splitting off of the molecular part R is ensured by irradiation with high-energy light.
  • the preferred embodiment of the method according to claim 15 results in a particularly successful creation of a stamp profile on gold surfaces, since S preferably forms a bond with the functional groups on the surface of gold.
  • a xenon light source can emit wavelengths from approximately 250 nm and a laser can also emit a wavelength of, for example, 248 nm.
  • the method according to claim 17 makes it possible to provide a surface with hydrophobic and hydrophilic areas.
  • the surface of these materials has functional groups which can bond with the compounds.
  • glass, graphite and aluminum surfaces are preferably coated or treated with compounds which contain Si as Y, since silicon preferably forms a bond with the functional groups or with the surface properties of these materials and the Ver - Bonds that contain silicon as Y, preferably bind to these surfaces.
  • gold surfaces are preferably coated with compounds which contain S as Y, since sulfur reacts preferentially with the surface properties of this material and these compounds which contain S as Y preferably form a bond with this material ,
  • the advantageous embodiment of the method according to claim 24 has the effect that the xenon light source radiates energy-rich light from a wavelength of approximately 250 nm, or the energy-rich light with the aid of a laser, for example a wavelength of 248 nm has, can be irradiated.
  • the bond between R and X is split photochemically.
  • the compounds can thus be used, for example, as a UV indicator or to produce certain surface properties, such as, for example, B. Creation of hydrophilic / hydrophobic Surface areas, or the creation of surface structures with elevations or depressions. If the connections are exposed to high-energy radiation, the property of the surface to which the connection was bound also changes, for example.
  • the surface which was hydrophobic before exposure now has hydrophilic properties.
  • a part of the compound which was bound to the surface is cleaved off by exposure to light. This creates a depression in the exposed area and gives the surface a structure.
  • Halogenated alkyl groups are notable for their high reactivity with high-energy light, in particular UV light.
  • the preferred embodiment of the use of compounds according to claim 27 brings about a rapid reaction of the compounds used with UV light.
  • the material to be processed for example glass, graphite, aluminum, gold, is coated with a solution of the compounds according to the invention.
  • a cleaned silicon wafer is immersed in a solution of fluoroalkyl-functional silane molecules (tridecafluorooctyltriethoxysilane) with a molecular length of about 1.2 nm for about 1 to 5 minutes.
  • the coating is complete after a curing time of approximately 15 minutes to 24 hours (at a temperature of 20 ° C. to 90 ° C.).
  • the coated silicon wafer is rinsed with acetone in an ultrasonic bath for 15 to 30 minutes
  • the masked silicon wafer is exposed to a UV lamp (xenon high-pressure lamp 250 nm to 2000 nm) for 15 min to 24 h, after which the mask is removed again a stamp profile in the form of a mask
  • the stamp profile has a stamp height of approximately 1.2 nm, which corresponds approximately to the molecular length, and the depressions are formed in the exposed areas.
  • Another area of application of the compound according to the invention and the method is the production of surfaces which are distinguished by water-repellent (hydrophobic) and wetting (hydrophilic) subregions.
  • the hydrophilic molecular region binds to the surface chemically and / or physically.
  • the hydrophobic molecular region of the compound according to the invention is aligned perpendicular to the treated surface and thus has the effect that the surface has hydrophobic properties.
  • the hydrophobic molecular part of the compound according to the invention is cleaved off by exposure and the surface points at the exposed areas now hydrophilic properties.
  • a cleaned glass plate is placed in a solution of fluoroalkyl functional silane molecules for approx. 1 to 5 min

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

L'invention concerne des procédés pour le traitement de surfaces, ainsi que des objets produits selon ces procédés. L'invention concerne également l'utilisation de composés en tant que réactifs clivables photochimiquement. Différentes techniques sont utilisées pour la texturation de surfaces ou pour la génération de structures de l'ordre du nanomètre sur des surfaces. Il est possible, grâce au procédé selon l'invention, de générer des structures de surface et des profils définis sans dépense technique importante. L'utilisation de composés clivables photochimiquement permet de générer de manière définie des surfaces à zones hydrophobes et hydrophiles ou un profil de surface présentant des creux et des bosses. Le profil ou la structure de surface est générée en fonction du masque utilisé qui est opaque aux ultraviolets et ne laisse passer la lumière ultraviolette qu'au niveau d'évidements définis.
PCT/DE2001/002315 2000-06-29 2001-06-21 Procedes pour le traitement de surfaces, objets produits selon ces procedes et utilisation de composes en tant que reactifs clivables photochimiquement Ceased WO2002001297A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10030797.3 2000-06-29
DE2000130797 DE10030797A1 (de) 2000-06-29 2000-06-29 Verfahren zur Behandlung von Oberflächen sowie mit diesen Verfahren hergestellte Gegenstände und Verwendung von...

Publications (2)

Publication Number Publication Date
WO2002001297A2 true WO2002001297A2 (fr) 2002-01-03
WO2002001297A3 WO2002001297A3 (fr) 2002-10-03

Family

ID=7646660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/002315 Ceased WO2002001297A2 (fr) 2000-06-29 2001-06-21 Procedes pour le traitement de surfaces, objets produits selon ces procedes et utilisation de composes en tant que reactifs clivables photochimiquement

Country Status (2)

Country Link
DE (1) DE10030797A1 (fr)
WO (1) WO2002001297A2 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0577187B1 (fr) * 1992-06-29 1995-12-13 Koninklijke Philips Electronics N.V. Méthode pour former un motif metallique sur verre par un procédé sans courant
JPH09263950A (ja) * 1996-03-28 1997-10-07 Canon Inc ガラス基板の化学メッキ方法
US6436615B1 (en) * 1999-06-25 2002-08-20 The United States Of America As Represented By The Secretary Of The Navy Methods and materials for selective modification of photopatterned polymer films

Also Published As

Publication number Publication date
WO2002001297A3 (fr) 2002-10-03
DE10030797A1 (de) 2002-01-24

Similar Documents

Publication Publication Date Title
EP2144711B1 (fr) Procédé de transfert d'une nanocouche
DE69624934T2 (de) Verfahren zur gerichteten abscheidung chemisch definierter körper
DE69524247T2 (de) Stempel für lithographie-verfahren
DE19945935B4 (de) Verfahren zur Herstellung eines oberflächenmodifizierten Schichtsystems
EP0120834B1 (fr) Filtres optiques texturés et procédé de fabrication
DE60310070T2 (de) Formwerkzeug, verfahren zur herstellung eines formwerkzeugs und durch verwendung des formwerkzeugs gebildetes speichermedium
DE10152878B4 (de) Verfahren zum Erzeugen dreidimensionaler Formkörper oder Oberflächen aus organopolysiloxanhaltigen Ausgangsmaterialien durch Laser-Bestrahlung und deren Verwendung
EP0051166B1 (fr) Procédé pour le développement de couches de polyméthylméthacrylate sans tension
EP0909747A1 (fr) Procédé d'obtention de surfaces auto-nettoyantes
EP3592501B1 (fr) Procédé servant à fabriquer un masque technique
EP1786572B1 (fr) Substrats a surface structuree et production desdits substrats
EP2094617B1 (fr) Procédé et dispositif de structuration de composants par recours à un matériau à base d'oxyde de silicium
WO2018114590A1 (fr) Procédé de fabrication de microstructures
WO2003102690A2 (fr) Procede de fabrication de photomasques pour la structuration de substrats semiconducteurs par lithographie optique
WO2002001297A2 (fr) Procedes pour le traitement de surfaces, objets produits selon ces procedes et utilisation de composes en tant que reactifs clivables photochimiquement
EP3523364B1 (fr) Mousse polymère nanostructurée hautement fluorée destinée à la fabrication de surfaces super-déperlantes
DE10344777B4 (de) Stempelvorrichtung für Softlithografie und Verfahren zu deren Herstellung
DE102007058103A1 (de) Bestrahlung mit hochenergetischen Ionen zur Oberflächenstrukturierung und Behandlung oberflächennaher Bereiche von optischen Elementen
DE60001008T2 (de) Zusammensetzung zur Entschichtung von Photolack in der Herstellung von integrierten Schaltungen
WO2006081798A1 (fr) Procede de production d'un elastomere et elastomere correspondant
DE60315569D1 (de) Verfahren zur Herstellung von dreidimensionalen Nanostrukturen und Mikrostrukturen
DE3337303C2 (de) Verfahren zur photolithographischen Erzeugung von feinen Resistmustern und hierfür verwendbare lichtempfindliche Gemische
DE102012018635A1 (de) Verfahren zum Herstellen einer 3D-Struktur
EP1431031B1 (fr) Procédé permettant de modifier les caracteristiques de mouillage d'une forme d'impression
DE19949993C1 (de) Verfahren zur Oberflächenstrukturierung

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP