[go: up one dir, main page]

WO2002086464A2 - Detecteur de gaz et son procede de realisation - Google Patents

Detecteur de gaz et son procede de realisation Download PDF

Info

Publication number
WO2002086464A2
WO2002086464A2 PCT/DE2002/000797 DE0200797W WO02086464A2 WO 2002086464 A2 WO2002086464 A2 WO 2002086464A2 DE 0200797 W DE0200797 W DE 0200797W WO 02086464 A2 WO02086464 A2 WO 02086464A2
Authority
WO
WIPO (PCT)
Prior art keywords
sensitive layer
gas sensor
membrane
sensor according
evaluation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/000797
Other languages
German (de)
English (en)
Other versions
WO2002086464A3 (fr
Inventor
Michael Bauer
Detlef Gruen
Christian Krummel
Ulrich Schilling
Erwin Rein
Michael Seiter
Heribert Weber
Odd-Axel Pruetz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2002086464A2 publication Critical patent/WO2002086464A2/fr
Publication of WO2002086464A3 publication Critical patent/WO2002086464A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer

Definitions

  • the invention relates to a gas sensor with a membrane, a heating structure arranged on the membrane, a first structure arranged on the membrane and a sensitive layer arranged on the membrane, which can be heated by the heating structure and whose electrical resistance can be evaluated by the evaluation structure.
  • the invention further relates to a method for producing a gas sensor, comprising the steps: applying a heating structure to a membrane, applying an evaluation structure to the membrane and applying a sensitive layer to the membrane.
  • Generic semiconductor gas sensors are used for example in gas analysis.
  • semiconductor gas sensors that have good sensitivity to gases such as CO, H 2 , NO, and hydrocarbon.
  • the sensitive layers of the gas sensors usually comprise metal oxides, which are heated by means of suitable structures to, for example, several 100 ° C. and evaluated electrically, mostly on a resistive basis.
  • the measurement principle for polycrystalline zinc oxide depends on the change in conductivity of the low-crystalline state when subjected to reducing or oxidizing gases.
  • the heating structure often has a meandering structure.
  • the evaluation structure generally consists of an interdigital structure (IDT; "Inter ⁇ igitated Transducers").
  • IDT Inter ⁇ igitated Transducers
  • the arrangement with the heating structure, evaluation structure and sensitive layer is generally applied to a membrane.
  • the aim is to use particularly thin membranes. This measure reduces the heat capacity of the system, which leads to a reduction in power consumption.
  • the heating structure and the evaluation structure are applied to the membrane.
  • the sensitive layer is subsequently applied, the level using a screen printing method for this step m.
  • the invention is based on the generic gas sensor in that the sensitive layer is applied as a drop and that the other structures are at least partially adapted to the shape of the sensitive layer.
  • the application of the sensitive layer as a drop enables a non-contact representation of the sensitive layer. In this way it is avoided that the membrane is damaged, for example in the screen printing process.
  • the other structures that is to say, for example, the heating structure or the evaluation structure
  • a layout with a small space requirement can be generated.
  • a membrane that is as thin as possible reduces the heat capacity of the system, which reduces the system's power consumption.
  • the sensitive layer preferably has an essentially circular boundary. The spherical structure of the applied drop leads to the circular structure of the sensitive layer. The circular structure of the sensitive layer can thus ultimately be largely determined when the drop is formed.
  • the evaluation structure is an interdigital structure, which has an essentially circular boundary.
  • An interdigital structure makes it possible to keep the resistance to be evaluated very low. Since the interdigital structure has an essentially circular boundary, this can be adapted to the circular structure of the sensitive layer, so that there is very little space required.
  • the heating structure may also be useful for the heating structure to have an essentially circular boundary.
  • the heating structure can also be adapted in this way to the circular structure of the sensitive layer and, if appropriate, to the evaluation structure. This also leads to a very space-saving layout, which ultimately has, for example, positive effects on the power consumption and the cost of the arrangement.
  • the heating structure is arranged outside the evaluation structure.
  • the heating structure is thus preferably arranged in a circular shape around the circular interdigital structure.
  • a meandering structure of the heating tracks is often provided.
  • the heating structure r is arranged within the evaluation structure.
  • the conductor tracks which form the interdigital structure thus run at least partially outside the heating structure. This can have the advantage that the space requirement is reduced again, since the heating structure does not have to lie outside the evaluation structure with a large diameter.
  • the membrane is circular.
  • the structure of the membrane can thus also be adapted to the structures on the membrane.
  • the sensitive layer is preferably arranged on the heating structure and the evaluation structure.
  • the sensitive layer can thus be in direct thermal contact with the heating structure.
  • the arrangement of the sensitive layer over the evaluation structure serves for the electrical contact for resistance measurement.
  • the gas sensor according to the invention is particularly advantageous in that the sensitive layer has a diameter of less than 1000 ⁇ m. Such small diameters can be realized on the basis of the present invention, this having particular advantages with regard to the space requirement and the power consumption associated therewith.
  • the sensor material preferably has a metal oxide to form the sensitive layer.
  • Metal oxides often have a gas-dependent resistance, for example due to re ⁇ uktion- and oxidation processes on the surface.
  • the merall oxide can be present, for example, in an organic system via which the physical parameters of the sensor material, for example the viscosity, are set. In this way, the diameter of the sensitive layer can ultimately be influenced.
  • the evaluation structure can also be useful for the evaluation structure to be an interdigital structure made up of concentric circles. This is a variant in which there is a particularly small space requirement.
  • the gas sensor according to the invention is usefully designed such that alignment markings are provided on the membrane. Such alignment markings, for example crosses or concentric circles, can be used for precise localization of the application site and for visual inspection of the arrangement.
  • the invention builds on the generic method in that the sensitive layer is applied as a drop and that the other structures are at least partially adapted to the shape of the sensitive layer.
  • This contactless process for applying the sensitive layer prevents the sensitive membrane from being damaged.
  • the layout can be layered with a view to optimizing a reduction in space requirements.
  • the sensor material is usefully applied in the form of a paste in the form of a sensitive layer.
  • the physical nature of the paste can thus be influenced as a parameter for the final structure of the sensitive layer. Structures with a very small diameter can thus be realized.
  • the method according to the invention is developed in such a way that the sensor material for forming the sensitive layer is applied by a dispensing method.
  • a dispensing method With dispensing methods, very small amounts of material can be dosed and localized very precisely.
  • a cannula is used to apply the sensor material to form the sensitive layer with a defined inner diameter that is adapted to the target geometries.
  • cannulas of this type structures can also be produced which are also in the range of a few 100 micrometers. The use of such cannulas enables the representation of a space-saving structure.
  • a screw dispenser is preferably used in the dispensing process. This is a known principle for applying very small amounts of material. It can be equally advantageous that a piston dispenser is used in the dispensing method.
  • the senor material for forming the sensitive layer is applied according to the inkjet principle. This also allows very small quantities of material to be dosed and localized very precisely.
  • the inkjet head used can be operated thermally or piezoelectrically.
  • optical means are provided for adjusting the relative position of the membrane and the dispenser or the inkjet head.
  • These optical means can include, for example, an autofocus device, so that the prerequisites for a production process suitable for mass production are created.
  • the invention is based on the knowledge that by applying a sensitive layer by means of a drop and by adapting the other structures to the shape of the sensitive layer, a gas sensor with a very small space requirement on the membrane can be created. It is possible to apply a sensitive layer with a very small diameter, for example using a dispensing process or using the inkjet principle. Since the structures applied now generally have a round shape, the evaluation structures and the heating structures are preferably also designed to be round. This minimizes the space required on the membrane. drawings
  • Figure 1 is a schematic representation of a membrane surface with structures in a gas sensor according to the invention
  • Figure 2 shows the application of a drop to a membrane with a dispensing process
  • Figure 3 shows the application of a drop on a membrane according to the inkjet principle.
  • FIG. 1 shows a schematic representation of a membrane surface with structures in a gas sensor according to the invention.
  • a heating structure 10 is arranged on the outside and has an essentially circular boundary.
  • the heating structure 10 is supplied with electrical energy via the feeds 28, 30.
  • the heating structure 10 is meandering.
  • An evaluation structure 12 can be seen within the heating structure 10. This evaluation structure 12 is also limited in a circle.
  • the evaluation structure 12 is an interdigital structure, which can be seen from the interconnecting conductor strips.
  • the boundary of the sensitive layer 14 is indicated by a circle between the heating structure 10 and the evaluation structure 12.
  • the sensitive layer 14 lies on the evaluation structure, so that the resistance measured at the connections 32, 34 depends on the resistance of the sensitive layer 14.
  • the structures 10, 12, 14 on the membrane 18 all have a round shape.
  • the structures 10, 12 are thus adapted to the natural shape of the sensitive layer 14, which is produced by applying a drop.
  • FIG. 2 shows the application of a drop to a membrane using a dispensing method.
  • a membrane 18 is carried by a substrate 36.
  • the heating structure 10 and the evaluation structure 12 are already located on this membrane 18, these being not recognizable in the present illustration.
  • the sensitive layer 14 is applied as a drop 16 to the membrane 18 by a screw dispenser 22 with a spmdel drive 38, metering needle 20 and metering screw 40.
  • the material to be applied is fed from a feed device 42 to the metering screw 22, a pre-pressure being built up by a piston 44 in the feed device 42.
  • the adjustment of the dosing screw 22 relative to the area on the membrane 18 to which the drop 16 is to be applied is achieved by optical means 24.
  • the membrane 18 advantageously applied markings, for example circles or crosses.
  • the optical means 24 provide a relative positioning of the needle 20 to the membrane 18, in particular the distance by means of, for example, autofocus principle p.
  • FIG. 3 shows the application of a drop to a membrane using an inkjet process.
  • sensor material to be fed is fed from a feed device 42.
  • the material is dosed according to the InKjet-Pnnzip.
  • the inkjet head 26 can thermally or piezoelectrically aerodynamically.
  • the drop 16 is ejected from the metering needle 20 of the inkjet cop 26 and applied to the membrane 18, which is carried by the substrate 36.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

La présente invention concerne un détecteur de gaz comprenant une membrane (18), une structure chauffante (10) disposée sur la membrane (18), une structure d'évaluation (12) disposée sur la membrane (18), et une couche sensible (14) disposée sur la membrane (18), pouvant être chauffée par la structure chauffante (10) et dont la résistance électrique peut être mesurée par la structure d'évaluation (12). Selon l'invention, la couche sensiblement (14) est appliquée sous la forme de gouttes (16) et les structures restantes (10, 12) sont au moins partiellement adaptées à la forme de la couche sensible (14). Cette invention concerne également un procédé permettant la réalisation d'un détecteur de gaz.
PCT/DE2002/000797 2001-04-20 2002-03-05 Detecteur de gaz et son procede de realisation Ceased WO2002086464A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10119405.6 2001-04-20
DE2001119405 DE10119405A1 (de) 2001-04-20 2001-04-20 Gassensor und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
WO2002086464A2 true WO2002086464A2 (fr) 2002-10-31
WO2002086464A3 WO2002086464A3 (fr) 2003-04-17

Family

ID=7682104

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000797 Ceased WO2002086464A2 (fr) 2001-04-20 2002-03-05 Detecteur de gaz et son procede de realisation

Country Status (2)

Country Link
DE (1) DE10119405A1 (fr)
WO (1) WO2002086464A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8802568B2 (en) 2012-09-27 2014-08-12 Sensirion Ag Method for manufacturing chemical sensor with multiple sensor cells
US11371951B2 (en) 2012-09-27 2022-06-28 Sensirion Ag Gas sensor comprising a set of one or more sensor cells
DE102016222913A1 (de) 2016-11-21 2018-05-24 Robert Bosch Gmbh Gassensor mit einem Halbleitersubstrat mit mindestens einer Isolationsschicht und einer Leiterbahn
CN108169293B (zh) * 2018-02-11 2024-10-01 中国工程物理研究院总体工程研究所 高精度薄膜电阻氢气传感器标校装置及标校方法
DE102023203826A1 (de) 2023-04-25 2024-10-31 Robert Bosch Gesellschaft mit beschränkter Haftung Sensorsystem zur Bestimmung einer Gaskonzentration im Umfeld des Sensorsystems sowie ein Verfahren zur Herstellung eines Sensorelements für ein solches Sensorsystem

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901067A (en) * 1973-06-21 1975-08-26 Gen Monitors Semiconductor gas detector and method therefor
FR2746183B1 (fr) * 1996-03-14 1998-06-05 Dispositif capteur chimique a semiconducteur et procede de formation d'un dispositif capteur chimique a semiconducteur
WO2001002844A1 (fr) * 1999-07-02 2001-01-11 Microchemical Systems S.A. Capteur chimique de gaz a oxide metallique et son procede de fabrication
WO2001013087A2 (fr) * 1999-08-18 2001-02-22 California Institute Of Technology Capteurs et reseaux de capteurs a base de composites conducteurs et isolants et leurs procedes d'utilisation
AU2002222357A1 (en) * 2000-12-20 2002-07-01 Eidgenossische Technische Hochschule Zurich Microsensor and single chip integrated microsensor system

Also Published As

Publication number Publication date
WO2002086464A3 (fr) 2003-04-17
DE10119405A1 (de) 2002-10-24

Similar Documents

Publication Publication Date Title
EP3244181B1 (fr) Procédé de fabrication d'un élément de capteur au moyen de structuration laser
DE102010029645B4 (de) Mikromechanisches Bauelement mit einer Teststruktur zur Bestimmung der Schichtdicke einer Abstandsschicht und Verfahren zum Herstellen einer solchen Teststruktur
WO2001042776A1 (fr) Capteur capacitif
EP2867904B1 (fr) Résistance, en particulier résistance de mesure de courant à faible impédance
DE102013110291A1 (de) Verfahren zur Herstellung eines Rußsensors mit einem Laserstrahl
DE102008040525A1 (de) Mikromechanisches Sensorelement, Verfahren zur Herstellung eines mikromechanischen Sensorelements und Verfahren zum Betrieb eines mikromechanischen Sensorelements
WO2008113644A2 (fr) Élément détecteur d'un capteur de gaz
WO2013072128A1 (fr) Capteur d'humidité intégré et procédé de fabrication dudit capteur d'humidité
EP1068501B1 (fr) Resistance sensible a la tension
EP2554964B2 (fr) Dispositif de mesure de la pression et de la température
WO2002086464A2 (fr) Detecteur de gaz et son procede de realisation
DE19843471B4 (de) Druckerkennungsvorrichtung
EP1308705B1 (fr) Procédé de fabrication d'un élément capteur et son utilisation
WO2012084694A1 (fr) Actionneur et son procédé de fabrication
EP2138450A2 (fr) Structure des électrodes pour un élément micromécanique
EP0992778A2 (fr) Capteur et son procédé de fabricage
EP3497410B1 (fr) Capteur pour débitmètre thermique, débitmètre thermique et procédé de fabrication d'un capteur d'un débitmètre thermique
DE10260577B4 (de) Dehnungsmessstreifen mit veränderbarem Nennwiderstand
DE102013100764B4 (de) Verfahren zur Herstellung von durch physikalische Gasphasenabscheidung erzeugten Elektroden sowie ein Verfahren zur Herstellung von Piezoelementen mit durch physikalische Gasphasenabscheidung erzeugten Elektroden
DE19950378B4 (de) Verfahren zur Herstellung eines impedimetrischen Sensors
EP3930421B1 (fr) Dispositif de chauffage doté d'un dispositif de mesure de la température et procédé de mesure de la température sur le dispositif de chauffage et de sa fabrication
EP1801548A2 (fr) Dispositif destiné à la détermination d'un paramètre de processus et procédé destiné à la production d'une unité de détection correspondante
EP1834162B1 (fr) Composant de la technique des microsystemes, pourvu d'un dispositif deformable sous l'effet de variations de temperature
DE10156160B4 (de) Mechanisch-elektrischer Wandler
DE102016111701A1 (de) Sensor für ein thermisches Durchflussmessgerät, ein thermisches Durchflussmessgerät und ein Verfahren zum Herstellen eines Sensors eines thermischen Durchflussmessgeräts

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP