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WO2002059981A3 - Herstellen elektrischer verbindungen in substratöffnungen von schaltungseinheiten mittels schräg gerichteter abscheidung leitfähiger schichten - Google Patents

Herstellen elektrischer verbindungen in substratöffnungen von schaltungseinheiten mittels schräg gerichteter abscheidung leitfähiger schichten Download PDF

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Publication number
WO2002059981A3
WO2002059981A3 PCT/DE2002/000208 DE0200208W WO02059981A3 WO 2002059981 A3 WO2002059981 A3 WO 2002059981A3 DE 0200208 W DE0200208 W DE 0200208W WO 02059981 A3 WO02059981 A3 WO 02059981A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
electrically
recess
electrical connections
circuit units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/000208
Other languages
English (en)
French (fr)
Other versions
WO2002059981A2 (de
Inventor
Titus Rinke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitaet Stuttgart
Original Assignee
Universitaet Stuttgart
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitaet Stuttgart filed Critical Universitaet Stuttgart
Priority to AU2002240791A priority Critical patent/AU2002240791A1/en
Priority to DE10290245T priority patent/DE10290245D2/de
Publication of WO2002059981A2 publication Critical patent/WO2002059981A2/de
Publication of WO2002059981A3 publication Critical patent/WO2002059981A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09645—Patterning on via walls; Plural lands around one hole
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Das Herstellungsverfahren kann unter anderem zur Herstellung von Solarmodulen verwendet werden, in denen die einzelnen Solarzellen elektrisch in Serie geschaltet werden. Dabei wird in einem Halbleiterschichtaufbau enthaltend einen p-n-Übergang mindestens eine Vertiefung (10) erzeugt, und auf einen die Vertiefung (10) enthaltenden Substratabschnitt eine elektrisch leitfähige Substanz (Al) in im wesentlichen gerichteter Weise abgeschieden, wobei die sich über einen Raumwinkel erstreckenden Abscheidungsrichtungen derart schräggestellt sind, dass innerhalb der Vertiefung (10) nur ein Wandabschnitt von der elektrisch leitfähigen Substanz bedeckt wird und somit die vorderseitige Elektrodenschicht (6) einer Solarzelle mit der rückseitigen Elektrodenschicht (11) einer dazu benachbarten Solarzelle elektrisch kontaktiert wird. Mit dem Verfahren können auch Metallisierungsebenen von Mehrlagenleiterplatten elektrisch untereinander kontaktiert werden.
PCT/DE2002/000208 2001-01-24 2002-01-23 Herstellen elektrischer verbindungen in substratöffnungen von schaltungseinheiten mittels schräg gerichteter abscheidung leitfähiger schichten Ceased WO2002059981A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002240791A AU2002240791A1 (en) 2001-01-24 2002-01-23 Production of electrical connections in substrate openings on circuit units by means of angularly directed deposition of conducting layers
DE10290245T DE10290245D2 (de) 2001-01-24 2002-01-23 Herstellen elektrischer Verbindungen in Substratöffnungen von Schaltungseinheiten mittels gerichteter Abscheidung leitfähiger Schichten

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10103114A DE10103114A1 (de) 2001-01-24 2001-01-24 Herstellen elektrischer Verbindungen in Substratöffnungen von Schaltungseinheiten mittels gerichteter Abscheidung leitfähiger Schichten
DE10103114.9 2001-01-24

Publications (2)

Publication Number Publication Date
WO2002059981A2 WO2002059981A2 (de) 2002-08-01
WO2002059981A3 true WO2002059981A3 (de) 2002-11-28

Family

ID=7671582

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000208 Ceased WO2002059981A2 (de) 2001-01-24 2002-01-23 Herstellen elektrischer verbindungen in substratöffnungen von schaltungseinheiten mittels schräg gerichteter abscheidung leitfähiger schichten

Country Status (3)

Country Link
AU (1) AU2002240791A1 (de)
DE (2) DE10103114A1 (de)
WO (1) WO2002059981A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7927497B2 (en) 2005-03-16 2011-04-19 Korea Advanced Institute Of Science And Technology Integrated thin-film solar cells and method of manufacturing thereof and processing method of transparent electrode for integrated thin-film solar cells and structure thereof, and transparent substrate having processed transparent electrode
KR100725110B1 (ko) 2005-12-14 2007-06-04 한국과학기술원 투과형 집적형 박막 태양전지 및 그 제조 방법.
KR100656738B1 (ko) 2005-12-14 2006-12-14 한국과학기술원 집적형 박막 태양전지 및 그 제조 방법
EP2724380B1 (de) 2011-06-23 2016-09-28 Big Solar Limited Verfahren zur herstellung einer struktur mit beschichtungsschritten und entsprechende anordnung
GB201301683D0 (en) 2013-01-30 2013-03-13 Big Solar Ltd Method of creating non-conductive delineations with a selective coating technology on a structured surface
GB2549134B (en) 2016-04-07 2020-02-12 Power Roll Ltd Asymmetric groove
GB2549133B (en) 2016-04-07 2020-02-19 Power Roll Ltd Gap between semiconductors
GB2549132A (en) 2016-04-07 2017-10-11 Big Solar Ltd Aperture in a semiconductor
GB201617276D0 (en) 2016-10-11 2016-11-23 Big Solar Limited Energy storage
DE102023117431B4 (de) 2023-07-03 2025-04-17 Audi Aktiengesellschaft Solarzellenmodul mit einer Ausnehmung mit elektrisch leitfähigem Material aufweisenden Trägerschicht, Kraftfahrzeug und Verfahren zum Herstellen eines Solarzellenmoduls

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029555A (en) * 1988-03-10 1991-07-09 International Business Machines Corporation Wafer holder method and apparatus in a vacuum deposition system
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5909458A (en) * 1996-11-27 1999-06-01 The Regents Of The University Of California Low-cost laser diode array

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4033658A1 (de) * 1990-10-23 1992-04-30 Siemens Ag Verfahren zur bearbeitung von grabenflanken in halbleitersubstraten
AUPN606395A0 (en) * 1995-10-19 1995-11-09 Unisearch Limited Metallization of buried contact solar cells
DE19819200B4 (de) * 1998-04-29 2006-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle mit Kontaktstrukturen und Verfahren zur Herstellung der Kontaktstrukturen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029555A (en) * 1988-03-10 1991-07-09 International Business Machines Corporation Wafer holder method and apparatus in a vacuum deposition system
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5909458A (en) * 1996-11-27 1999-06-01 The Regents Of The University Of California Low-cost laser diode array

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PIOTROSWKI J ET AL: "A NOVEL MULTI-HETEROJUNCTION HGCDTE LONG-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTOR FOR OPERATION UNDER REDUCED COOLING CONDITIONS", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS. LONDON, GB, vol. 13, no. 10, 1 October 1998 (1998-10-01), pages 1209 - 1214, XP000781146, ISSN: 0268-1242 *
VERBEEK M ET AL: "Mechanically grooved high-efficiency silicon solar cells with self-aligned metallisation", CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996 WASHINGTON, DC, USA, 1996, New York, pages 521 - 524, XP010208203 *

Also Published As

Publication number Publication date
AU2002240791A1 (en) 2002-08-06
DE10103114A1 (de) 2002-10-31
WO2002059981A2 (de) 2002-08-01
DE10290245D2 (de) 2004-04-15

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