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WO2002049087A1 - Dispositif de traitement de substrat de transfert à douche oscillante - Google Patents

Dispositif de traitement de substrat de transfert à douche oscillante Download PDF

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Publication number
WO2002049087A1
WO2002049087A1 PCT/JP2001/010766 JP0110766W WO0249087A1 WO 2002049087 A1 WO2002049087 A1 WO 2002049087A1 JP 0110766 W JP0110766 W JP 0110766W WO 0249087 A1 WO0249087 A1 WO 0249087A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
liquid
etching
processing
shower
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2001/010766
Other languages
English (en)
Japanese (ja)
Inventor
Kyoji Shimoda
Hitoshi Tauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Priority to KR1020027010304A priority Critical patent/KR20020084122A/ko
Priority to JP2002550302A priority patent/JPWO2002049087A1/ja
Publication of WO2002049087A1 publication Critical patent/WO2002049087A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a transport type substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device and the like. Background technology
  • a glass substrate used in a liquid crystal display device is manufactured by repeatedly performing chemical treatments such as etching and separation on the surface of a glass substrate as a material.
  • the processing equipment is roughly divided into dry type and batch type, and the batch type is further divided into batch type and single wafer type. Further, the single wafer type is subdivided into a rotary type and a transport type by roller transport or the like.
  • the transport type has a basic configuration for supplying a processing liquid to the surface of the substrate while transporting the substrate in a horizontal direction. Used for separation processing.
  • a transfer type substrate processing apparatus used for etching processing an etching solution is sprayed from a large number of spray nozzles arranged in a matrix above a substrate transfer line, and the substrate is passed through the etching solution.
  • An etchant is supplied to the entire surface of the substrate.
  • the surface of the substrate is selectively etched except for the portion where the masking material is applied.
  • a cleaning process using a shower is performed.
  • etching solution for A1 a solution mainly containing phosphoric acid is used.
  • this etchant is supplied to the surface of a substrate, it often occurs on a fine foamed metal film due to a reaction with a metal. These bubbles are not removed by the physical action of the shower of the etching liquid, but remain on the metal film of the substrate, thereby causing uneven etching.
  • the etchant flows through the surface of the substrate from the front to the rear in the transport direction as a result of the substrate passing through the inside of the etchant, thereby performing liquid replacement.
  • This is not a problem when the substrate is small, but when the substrate is large, the etchant tends to stagnate at the center of the substrate as compared to both sides.
  • the etching rate of A1 by the etching solution for A1 is higher than the etching rate of Cr by etching for Cr, and thereby high etching efficiency can be obtained.
  • the etching rate of the A1 layer after etching is high.
  • the side edge surface is improperly shaped for the next layer stack.
  • FIG. 4 is a cross-sectional view showing the shape of the A1 layer after etching.
  • a layer 2 and Mo layer 3 are formed on a glass substrate 1 which is a material, and Sking material 4 is coated.
  • the etching removes the A1 layer 2 and the Mo layer 3 in the area not covered with the masking material 4, but the remaining side edge surfaces of the A1 layer 2 and the M0 layer 3 are indicated by solid lines.
  • the slope becomes steep.
  • the next layer cannot be stably placed on the A1 layer 2 and the Mo layer 3.
  • the etching solution for A1 has a higher viscosity than the etching solution for Cr, and has poor wettability to the surface of the glass substrate 4.
  • the etching rate is high as described above. For this reason, at the start of the shower process, the portion where the fine droplets of the etchant collide with each other becomes uneven in the process, and remains after the etching without disappearing even in the subsequent sharpening process.
  • An object of the present invention is to efficiently remove bubbles generated on the surface of a substrate due to the supply of a processing liquid to the surface of the substrate, and to reduce the unevenness of the processing rate in the width direction, which is a problem for large substrates.
  • An object of the present invention is to provide an oscillating shear type substrate processing apparatus which can eliminate the problem.
  • Another object of the present invention is to apply the A1 etching to form the side edge surface of the A1 layer into a gentle slope suitable for laminating the next layer, and also reduce the processing unevenness caused by the initial shower.
  • An object of the present invention is to provide a swing shower type transfer type substrate processing apparatus which can be eliminated. Disclosure of the invention
  • an oscillating shower-type transfer-type substrate processing apparatus of the present invention is a transfer-type substrate processing apparatus that supplies a processing liquid to a surface of a substrate while transporting the substrate in a horizontal posture in a horizontal direction. And a large number of spray nozzles arranged in the direction of travel of the substrate and in the direction perpendicular to the direction of travel.
  • the shower unit has a swing mechanism for swinging each spray nozzle synchronously to both sides in the direction of travel of the substrate. It is provided.
  • a slit nozzle for supplying the processing liquid in a film shape over the entire width in a part of the substrate traveling direction can be provided downstream of the shower unit.
  • a slit nozzle that supplies the processing liquid in a film shape over the entire width in a part of the substrate in the traveling direction can be provided upstream of the shower unit.
  • the processing liquid supplied to the surface of the substrate alternately flows on both sides in the direction of travel by oscillating the multiple spray nozzles that make up the shower unit on both sides synchronously in the direction of travel of the substrate. It can be done.
  • the processing liquid supplied onto the surface of the substrate is naturally discharged to both sides due to overflow except for forced discharge to the rear in the transport direction.
  • a liquid flow from one side to the other side of the substrate and a liquid flow from the other side to the negative side are forcibly formed alternately.
  • bubbles generated on the surface of the substrate due to the supply of the processing liquid to the surface can be efficiently removed, and the processing rate in the width direction can be equalized.
  • a slit nozzle for supplying a processing liquid in a film shape over the entire width in a part of the substrate in the traveling direction, and performs a paddle processing in which the processing liquid is thinly applied on the surface of the substrate after the shower processing.
  • a slit nozzle for supplying a processing liquid in a film form over the entire width in a part of the substrate in the traveling direction is provided, and the shower processing is performed.
  • the substrate By passing the substrate through the film before the process, the surface is uniformly wetted. Once wet without unevenness, even if subjected to a shower process thereafter, no unevenness in processing due to the droplets occurs.
  • the oscillating shower-type transfer-type substrate processing apparatus of the present invention is particularly suitable for A1 etching, but is also effective for other etching processing with a difference in the degree of effect.
  • a technique of swinging a large number of spray nozzles constituting a shower unit to both sides is known in a tilt transfer type substrate processing apparatus in which a substrate is tilted to the side and transferred in a horizontal direction (Japanese Patent Application Laid-Open No. HEI 1-1990). 1-7 4 2 4 8 gazette).
  • the paddle processing described above is not possible and the compatibility with the shower processing is essentially inferior in the inclined transfer type.
  • FIG. 1 is a plan view of a transfer type substrate processing apparatus showing one embodiment of the present invention
  • FIG. 2 is a side view of a main part of the substrate processing apparatus
  • FIG. 3 is a front view of a main part of the substrate processing apparatus
  • the oscillating shearing type transfer type substrate processing apparatus of the present embodiment performs an A1 etching process on a glass substrate 100 for a liquid crystal display device (hereinafter simply referred to as a substrate 100).
  • the substrate processing apparatus includes a first linear line, a second line B connected to the first line A at right angles, and a first line A connected to the second line B at right angles.
  • a U-turn type layout is used, which combines a third line C that is in parallel with the other.
  • the first line A is configured by linearly connecting the receiving part 10, the liquid shielding part 20, and the etching part 30.
  • the second line B is a washing section 40, which is equipped with a shower unit 41 for spraying washing water from above on the surface of the substrate 100.
  • the third line C is configured by connecting a transfer device 50, a spin dryer 60, a transfer device 70, and a take-out unit 80 in a straight line.
  • the first line A and the second line B include a number of transport rollers arranged at predetermined intervals in the transport direction to transport the substrate 100 in the longitudinal direction of the line. It has.
  • Each transport roller is a horizontal roll perpendicular to the transport direction.
  • the substrate 100 is horizontally supported and transported in the horizontal direction.
  • a turning mechanism 42 for changing the traveling direction of the substrate 100 by 90 degrees is provided at the second line B, that is, at the entrance of the washing section 40.
  • the substrate 100 subjected to the etching process is carried into the receiving unit 10 by the carrier device 90.
  • the substrate 100 enters the etching portion 30 from the liquid blocking portion 20 by roller transport, and undergoes an etching process while passing therethrough.
  • the substrate 100 that has passed through the etching section 30 subsequently enters the washing section 40 by roller conveyance, changes the traveling direction by 90 degrees, moves through the washing section 40, and performs a washing process during the movement.
  • the substrate 100 that has moved to the outlet of the rinsing section 40 is transferred from the rinsing section 40 to the spin dryer 60 by the transfer device 5Q.
  • the substrate 100 that has been dried by the spin dryer 60 is transported from the spin dryer 60 to the take-out unit 80 by the transfer device 70, and is further transported out of the device by the transport device 90.
  • the etching unit 30 has a particularly significant feature.
  • the etching unit 300 includes a transport roller 31 for transporting the substrate 100 in the horizontal direction. Above the transport line for the substrate 100, the surface of the substrate 10 is provided. A first slit nozzle 33, a shutter unit 34, and a second slit nozzle 35 are provided in order along the traveling direction of the substrate 10 in order to supply an etching liquid to the substrate 10. .
  • the transport roller 31 supports the substrate 100 at points by large-diameter portions 31b provided at a plurality of positions in the axial direction of the drive shaft 31a, and the substrate 100 is formed by flanges 31 provided on both sides. Performs positioning in the width direction of 0.
  • the first slit nozzle 33 is a horizontal nozzle perpendicular to the traveling direction of the substrate 100. This is a whirlpool, and the etching solution for A1 is supplied in the form of a film and flows down, thereby supplying the etching solution linearly over the entire width in a part of the surface of the substrate 10 in the traveling direction.
  • the shower unit 34 has a large number of spray nozzles 34 arranged in a matrix (including a staggered shape) at predetermined intervals in a horizontal direction parallel to the traveling direction of the substrate 100 and in a horizontal direction perpendicular to the traveling direction. A is provided and sprays the etching solution for A1 over a wider area than the surface of the substrate 10 o
  • a large number of spray nozzles 34a are arranged in a direction perpendicular to the direction of travel of the substrate 100, and are directed downward to a plurality of header tubes 34b each extending in the direction of travel of the substrate 100. Installed. Each of the spray nozzles 34a jets the etching liquid for A1 into fine droplets in a conical shape, and the jetting range of each nozzle overlaps between adjacent nozzles.
  • the supply amount of the etching liquid here is set so that sufficient liquid replacement is performed on the surface of the substrate 100.
  • the plurality of header pipes 34b are symmetrically oscillated synchronously at predetermined angles in both directions by an oscillating mechanism 34c in order to synchronously oscillate each spray nozzle 34a at both sides at a predetermined angle. It is driven to rotate.
  • the swing mechanism 34 c has a rack gear 34 d in a horizontal direction perpendicular to the direction in which the substrate 100 moves.
  • the rack gear 34 d extends over the plurality of header tubes 34 b and is disposed above the header tube 34 b, and meshes with the pinion gear 34 e attached to each header 34 b.
  • the rack gear 34 d is supported so as to be movable in the longitudinal direction, and is reciprocated at a predetermined stroke by a crank mechanism 34 f installed on the base end side.
  • the plurality of header tubes 34 b are synchronized around the center at a predetermined angle in both directions. This causes the spray nozzles 34a to swing symmetrically around the center of the header tube 34b at both sides in synchronization at a predetermined angle.
  • the second slit nozzles 35 are, similarly to the first slit nozzles 33, horizontal nozzles perpendicular to the traveling direction of the substrate 100, and are arranged at predetermined intervals in the traveling direction of the substrate 100. ing.
  • each of the slit nozzles 35 causes a small amount of the etching liquid for A1 to flow down in a film perpendicular to the direction in which the substrate 100 is conveyed, so that the etching liquid is supplied to the substrate 1 It is supplied in a straight line over the entire width in a part of the surface of the surface 0 in the traveling direction, and stays. That is, the supply amount of the etching liquid here is set to such an extent that the etching liquid supplied to the surface of the substrate 10 is held on the surface by the surface tension.
  • Reference numeral 36 denotes a slit-type air nozzle disposed further behind the second slit nozzle 35 at the last stage, and by blowing air linearly over the entire width on a part of the surface of the substrate 10 in the traveling direction. The etchant is removed from the surface.
  • the substrate 100 that has entered the etching section 30 from the liquid blocking section 20 is in a horizontal posture, and has a first slit nozzle.
  • 33 passes through the film of the etching liquid for A1 formed below 3, and the etching liquid is sequentially supplied from the tip to the surface thereof.
  • the liquid passes through the shower of the A1 liquid formed below the shower unit 34, and the A1 etching liquid is supplied to the entire surface of the substrate 100, so that predetermined etching is performed.
  • the portion that first receives the droplets remains as processing unevenness. Since the etching liquid is supplied evenly on the top, processing unevenness due to the etching liquid shaping process Is prevented.
  • the A1 layer or the A1ZMo layer formed on the surface of the substrate 100 is selectively etched by a shower process using an etching solution for A1.
  • a large number of fine air bubbles may be generated on the metal film of the substrate 100.
  • a large number of spray nozzles 34a constituting the shutter unit 34 are formed by a header tube. Swings symmetrically around the center of 3 4b to both sides synchronously at a predetermined angle. Due to this swing, a liquid flow from one side to the other side and a liquid flow from the other side to the negative side are forcibly formed on the surface of the substrate 100 alternately.
  • the side edge surface of the remaining A1 layer or A1 / Mo layer becomes a steep slope that is unsuitable for lamination of the next layer.
  • the etching solution for A1 flowing down in a film form from the second slit nozzle 35 is supplied to the surface of the substrate 100, and the etching is performed on the surface. It is kept in paddle state. During this time, the etching process proceeds slowly, and as shown by the dashed line in FIG. 4, the remaining side edge surface of the A1 layer or A1 / Mo layer becomes a gentle edge suitable for lamination of the next layer. It becomes a slope.
  • the paddle processing unit constituted by the plurality of second slit nozzles 35 is, in other words, a paddle processing unit in which the latter part of the shear processing unit constituted by the shunt unit 34 is replaced by a paddle processing unit. is there.
  • the paddle processing time is preferably from 10 to 45%, more preferably from 20 to 40%, of the total processing time with the etching solution. If the paddle processing time is too short, the inclination of the side edge surface will not be sufficiently relaxed, but if it is too long, the effect will be adversely affected. Problems such as a decrease in the efficiency and unnecessary consumption of the liquid are problems.
  • the substrate 100 can be reciprocated.
  • the swing angle of the spray nozzle 34a in the shower processing section is preferably 30 to 90 degrees, particularly preferably 45 to 75 degrees. If this is too small, the liquid flow in the substrate width direction will not be formed sufficiently. If it is too large, unnecessary consumption of liquid becomes a problem.
  • the swing cycle is preferably from 1 to 10 seconds, and particularly preferably from 2 to 5 seconds. If this is too small, the liquid flows in both directions cancel each other out, making it difficult to form a liquid flow. If it is too large, it will be difficult to form a liquid flow. Industrial applicability
  • the oscillating shearing type transfer type substrate processing apparatus of the present invention is configured such that the spray nozzle constituting the shower unit is directed in the direction of travel of the substrate with respect to the substrate which is transported horizontally in a horizontal posture.
  • the spray nozzle constituting the shower unit is directed in the direction of travel of the substrate with respect to the substrate which is transported horizontally in a horizontal posture.
  • a slit nozzle for supplying a processing liquid in a film form over the entire width of the substrate surface is provided downstream of the shower unit, and paddle processing is performed, so that a side edge surface of the A1 layer, which is a problem in A1 etching, is provided. Can be changed to a gentle slope suitable for the next layer stack o
  • a slit nozzle for supplying a processing liquid in a film form across the entire width of the substrate surface is provided on the upstream side of the shower unit, and the substrate is passed through the film before the shower processing, so that the processing unevenness is obtained. Effect more effectively Can be prevented,

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

La présente invention concerne un dispositif de traitement de substrat de transfert capable, non seulement d'éliminer puissamment les bulles d'air se formant à la surface d'un substrat pendant le déversement du fluide de traitement sur la surface du substrat, mais aussi de faire disparaître les irrégularités de taux de traitement selon l'axe transversal, lesquelles irrégularités posent problème dans le cas des grands substrats. En l'occurrence, on dispose d'un grand nombre de gicleurs d'arrosage (34a) déversant le fluide de traitement sur la totalité de la surface du substrat (100) qui progresse horizontalement en position horizontale, les gicleurs d'arrosage (34a) étant animés d'un mouvement oscillant latéral synchrone par rapport à l'axe de progression du substrat. De cette façon, on fait alterner les sens de force du flux de fluide d'un bord à l'autre du substrat (100).
PCT/JP2001/010766 2000-12-12 2001-12-07 Dispositif de traitement de substrat de transfert à douche oscillante Ceased WO2002049087A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020027010304A KR20020084122A (ko) 2000-12-12 2001-12-07 요동 샤워형 반송식 기판 처리 장치
JP2002550302A JPWO2002049087A1 (ja) 2000-12-12 2001-12-07 揺動シャワー型搬送式基板処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-376830 2000-12-12
JP2000376830 2000-12-12

Publications (1)

Publication Number Publication Date
WO2002049087A1 true WO2002049087A1 (fr) 2002-06-20

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PCT/JP2001/010766 Ceased WO2002049087A1 (fr) 2000-12-12 2001-12-07 Dispositif de traitement de substrat de transfert à douche oscillante

Country Status (5)

Country Link
JP (1) JPWO2002049087A1 (fr)
KR (1) KR20020084122A (fr)
CN (2) CN1224083C (fr)
TW (1) TWI240946B (fr)
WO (1) WO2002049087A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005013342A1 (fr) * 2003-08-04 2005-02-10 Sumitomo Precision Products Co., Ltd Dispositif d'elimination de reserve
JP2012146740A (ja) * 2011-01-07 2012-08-02 Japan Display Central Co Ltd エッチング装置及びエッチング方法
JP2017005264A (ja) * 2016-08-30 2017-01-05 株式会社Ｎｓｃ スプレイエッチング装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4421956B2 (ja) * 2003-07-18 2010-02-24 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
KR100652221B1 (ko) * 2004-12-15 2006-12-01 엘지.필립스 엘시디 주식회사 슬릿코터
JP2007117857A (ja) * 2005-10-27 2007-05-17 Tokyo Ohka Kogyo Co Ltd 基板の搬送処理装置
JP4976188B2 (ja) * 2007-04-16 2012-07-18 芝浦メカトロニクス株式会社 基板の処理装置
JP5261077B2 (ja) * 2008-08-29 2013-08-14 大日本スクリーン製造株式会社 基板洗浄方法および基板洗浄装置
CN101954358B (zh) * 2010-05-06 2012-07-04 东莞宏威数码机械有限公司 平移式基板清洗装置
CN102107162A (zh) * 2010-12-01 2011-06-29 东莞宏威数码机械有限公司 喷淋装置
CN102856238A (zh) * 2011-06-27 2013-01-02 均豪精密工业股份有限公司 表面处理装置及方法
CN103316862B (zh) 2013-07-12 2016-01-06 合肥京东方光电科技有限公司 一种基板清洗装置
CN111618046B (zh) * 2020-07-03 2023-05-05 安徽理工大学 一种光缆自动除字装置及其实现方法
CN113225926B (zh) * 2021-03-30 2022-05-03 广东兴达鸿业电子有限公司 一种pcb板生产用双摇摆蚀刻设备

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JPH1079368A (ja) * 1996-09-04 1998-03-24 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH11145109A (ja) * 1997-11-07 1999-05-28 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000114221A (ja) * 1998-10-02 2000-04-21 Dainippon Screen Mfg Co Ltd 基板処理装置

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JPH09148297A (ja) * 1995-11-24 1997-06-06 Hitachi Ltd 基板の乾燥方法およびこれを用いる乾燥装置およびこれを用いる半導体装置の製造方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH1079368A (ja) * 1996-09-04 1998-03-24 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH11145109A (ja) * 1997-11-07 1999-05-28 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000114221A (ja) * 1998-10-02 2000-04-21 Dainippon Screen Mfg Co Ltd 基板処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005013342A1 (fr) * 2003-08-04 2005-02-10 Sumitomo Precision Products Co., Ltd Dispositif d'elimination de reserve
JP2012146740A (ja) * 2011-01-07 2012-08-02 Japan Display Central Co Ltd エッチング装置及びエッチング方法
JP2017005264A (ja) * 2016-08-30 2017-01-05 株式会社Ｎｓｃ スプレイエッチング装置

Also Published As

Publication number Publication date
KR20020084122A (ko) 2002-11-04
TWI240946B (en) 2005-10-01
CN1398424A (zh) 2003-02-19
JPWO2002049087A1 (ja) 2004-04-15
CN1684235A (zh) 2005-10-19
CN1224083C (zh) 2005-10-19
CN100358115C (zh) 2007-12-26

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