1227035 玫、發明說明： 【發明所屬之技術領域】 本發明係有關於一種搬送式基板處理裝置，較佳係爲 適用在液晶顯示裝置用玻璃基板之製造上。 【先前技術】 使用在液晶顯示裝置之玻璃基板係爲，藉由在作爲素 材之玻璃基板之表面上反覆實施蝕刻、剝離等化學處理而 製造。該種基板處理裝置係大區分爲乾式與濕式，且濕式 係區分爲間歇式與饋紙式。再者，饋紙式係更加細區分爲 定位旋轉式與藉由滾輪搬送等所達成之搬送式。 在該等基板處理裝置中，搬送式之構件，其基本構造 係形成爲將基板於水平方向一面進行搬送、一面將處理液 供給至基板之表面，由於其高效率而自過去以來便被使用 在蝕刻處理或剝離處理中。 在使用於蝕刻處理之搬送基板裝置中，基板係依序通 過接收部（載入部）、避液部、蝕刻部、水洗部、以及脫 水部。在蝕刻部中，蝕刻液係由以矩陣狀配置在基板搬送 線之上方的多數噴射噴嘴部中而呈噴灑狀的噴出，藉由將 基板通過該種噴灑之中而使蝕刻液供給至基板之整體表 面。藉由此種噴灑處理，基板之表面係除了已塗覆有遮蔽 材料之部分以外爲被選擇性地蝕刻。 緊接著在蝕刻部之後的水洗部中，洗淨用之純水係由 以矩陣狀J3置在基板搬送線之上方與下方的多數噴射噴嘴 部中而呈噴灑狀的噴出。藉由將基板通過該種噴灑之中而 6 1227035 使基板之兩表面被淸洗。 不過，緊接著在蝕刻部之後的水洗處理之目的方面， 除了去除、淸洗殘留在基板表面上之蝕刻液之外，亦具有 由基板表面去除粒子之淸淨化的作用。爲了提高後者之淸 淨化之能力，爲具有附加至噴灑處理（一般係爲在噴灑處 理途中）而將刷子洗淨、噴泡洗淨、超音波震盪 (Megasonic)洗淨等作爲任選（optional)處理來進行。 所謂的噴泡洗淨，係爲使混合有純水與氣體之二流體 噴嘴於基板之板寬方向上整列成多數列，而由該多數已整 列之噴嘴列將純水以霧狀噴射至基板表面的處理，該種噴 嘴列係爲，在夾持基板之搬送線之上下兩位置上，朝基板 搬送方向配置成一段或是兩段以上。 相對於刷子洗淨爲在去除、乃至於使5 // m以上之較大 的粒子浮起方面爲較具效果，噴泡洗淨係藉由較小的霧氣 徑値，而可有效率地去除、乃至於使1至5 // m之中小程 度的粒子浮起方面爲較具效果，而超音波震盪 (Megasonic )洗淨係在更細微的粒子之去除乃至於使其 浮起方面爲較有效。因此，因應需要而將該等任選處理以 單獨或是複合組裝置水洗處理中。 從而，在噴泡洗淨方面，爲了形成細微的霧氣而使用 大量的氣體，其噴射量係爲在各噴嘴列上每一列爲超過 1 00 0L /分。也因爲該種大量之氣體噴射，霧氣係廣泛的 飛散於噴射位置之上游側以及下游側，藉由附著在基板表 面之寬廣範圍而造成產生有污點之原因。此外，藉由使用 7 1227035 大量之氣體，而造成基板之表面容易乾燥，而此事件亦形 成爲產生污點等之原因，更由於使基板表面乾燥而造成本 體方面的大問題。 本發明之目的係爲提供一種搬送式基板處理裝置，係 爲可有效果的防止在噴泡處理中造成問題之污點的產生以 及基板之乾燥。 【發明內容】 爲了達成上述目的，本發明之搬送式基板處理裝置係 爲，一種搬送式基板處理裝置，爲使基板朝水平方向搬送、 通過多數之處理部，藉由多數處理部之至少之一處來進行 包含有噴泡處理之水洗處理，其特徵在於：在用以進行前 述噴泡處理之二流體噴嘴列之上游側以及下游側上設有霧 氣飛散防止用之遮蔽板，同時，在多數遮蔽板中之至少最 下游側之遮蔽板的下游側上，爲設有將洗淨水供給至基板 表面之供水裝置。 在本發明之搬送式基板處理裝置中，藉由將霧氣飛散 防止用之遮蔽板設置在二流體噴嘴列之上游側以及下游 側，而可防止霧氣之飛散。而藉由將霧氣飛散防止用之遮 蔽板設置在二流體噴嘴列之上游側以及下游側，係增強在 二流體噴嘴列之正下方的氣流、促進基板之乾燥，不過， 在多數之遮蔽板中之至少最下游側之遮蔽板之下游側上係 設有將洗淨水供給至基板表面的供水裝置，藉此，爲防止 該種乾燥。 在由更有效果的防止霧氣之飛散的觀點來判斷，較佳 8 1227035 係以將噴泡處理部設置有由後續之處理部隔離的隔牆。此 外’係以使遮蔽板之前端極力的接近於基板的表面、或是 縮小設在隔牆上之基板之通過孔的間隔者爲佳。另一方 面’在由更有效果的防止基板之乾燥的觀點來判斷，較佳 係在前述隔牆之下游側上，設置有將洗淨水供給至基板表 面的供水裝置。 一般，設在隔牆上之基板通過孔的間隔，直到基板表 面之距離係爲3至6mm。由提高防止霧氣之飛散效果之點 來判斷’該距離係越小越好，較佳爲1至3mm、特別是以 1至2mm爲更佳，不過，由於所搬送基板之震動，而使該 距離受到限制，係無法獲得1至3mm、特別是無法獲得1 至2mm。即使是對於由遮蔽板之前端至基板表面之距離亦 爲相同。從而，爲將霧氣噴射用之二流體噴嘴列以配置在 由上下夾持基板之旁路（pass line )之位置的同時，將來 自上側之二流體噴嘴列之霧氣噴射壓設定成高於來自下側 之二流體噴嘴列的霧氣噴射壓，並且，在霧氣噴射部之附 近設置有由下方支撐基板的輔助滾輪時，便可穩定上下二 流體噴嘴列之間的基板，而作爲由遮蔽板之前端至基板表 面的距離，係可形成爲1至3mm、亦可形成爲1至2mm。 亦即，爲了在噴泡處理部穩定地搬送基板，而必須將 霧氣噴射用之二流體噴嘴列配置在夾持基板之旁路（pass line )之上下位置。不過，在將來自上側之二流體噴嘴列 的霧氣噴射壓與來自下側之二流體噴嘴列的霧氣噴射壓設 爲相同時，基板將不穩定。藉由在霧氣噴射部之附近設置 9 1227035 將基板由下方支撐的輔助滾輪，而可來自上側之二流體噴 嘴列的霧氣噴射壓設定成高於來自下側之二流體噴嘴列的 霧氣噴射壓，藉此，在將基板通過其他部分時係可形成更 爲穩定狀。 作爲前述供水裝置，將洗淨水以寬度方向連續地將洗 淨水以水膜狀噴射至基板表面的幕狀噴嘴，係以構造簡單 者爲佳。 【實施方式】 以下，基於圖面說明本發明之實施例。 · 本實施例之基板處理裝置係爲一種在液晶顯示裝置用 玻璃基板之製造中所使用的蝕刻裝置。該種基板處理裝置 係如第1圖所示，具備有朝向基板10之搬送方向依序配 置的接收部20、避液部30、蝕刻部40、水洗部50、以及 * 脫水部60。各部係分別裝設有水平支撐基板1 0而朝水平 方向搬送的多數之搬送滾輪21、31、41、51、61。 被設在接收部20與蝕刻部40之間的避液部30，係爲 一種防止在蝕刻部40使用之蝕刻液侵入接收部20的緩衝 鲁 部。在蝕刻部40中，在基板1 0之上面由上方將蝕刻液以 噴灑狀進行供給的噴灑單元42，係被設置成位在基板1 0 之搬送線的上方。 水洗部50係藉由兩段之隔牆52、52而被區隔成第一 灑水部5 3、噴泡處理部5 4、以及第二灑水部5 5。在第一 灑水部53中，係設有上下一組之第一噴灑單元53a、53a， 係在基板1 〇之上面以及下面將純水由基板1 〇由上方以及 _ 10 1227035 下方以噴灑狀的散佈。在噴泡處理部54中係設有上下一 組之二流體噴嘴列5 6、5 6，係在基板1 0之上面以及下面 將霧氣由上方以及下方噴射。在第二灑水部55中，係設 有上下一組之第二噴灑單元55a、55a，係在基板10之上 面以及下面將純水由基板1 〇由上方以及下方以噴灑狀的 散佈。 上下一組之二流體噴嘴列5 6、5 6係以兩段被配置在基 板1 〇之搬送方向上。各個二流體噴嘴列5 6係如第2圖以 及第3圖所示，係具備有多數之二流體噴嘴56b、56b…， 係在垂直於基板10之搬送方向之方向的首部56a上指定 間隔來安裝。多數之二流體噴嘴56b、56b…之任一方均混 合由供水管56c所供給之純水、以及由供氣管56d所供給 之淸潔氣體，形成純水之霧氣而以簾幕狀的噴射至基板1 〇 之表面全寬。並且，在全數之二流體噴嘴列56之上游側 以及下游側上，係使防止霧氣飛散之前後一對的遮蔽板 5 7、5 7以設置成在與基板1 0之間僅隔有些許空隙狀。 在下側、且下游側之遮蔽板57之內側面上，係設有在 霧氣噴射部之附近支撐基板1 〇的輔助滾輪59。此外，位 在上下一組之二流體噴嘴列5 6、5 6之下游側的遮蔽板5 7、 5 7之更爲下游側上，係設有上下一組之供水裝置5 8、5 8。 再者，在最上游側之遮蔽板57、57之更上游側上，亦設 有上下一組之供水裝置5 8、5 8。 各個供水裝置58係爲一種幕狀噴嘴，爲在基板10之 上面或是下面之寬度方向上，連續地將簾幕狀之水膜朝向 11 1227035 遮蔽板5 7之前端部附近進行噴射。具體而言係如第4圖 所示，爲具備有：首部管5 8a，係延伸於垂直基板1 〇之 搬送方向的水平方向上；灑水噴嘴58b，係在首部管58a 之長邊方向上以指定間隔進行安裝；灑水噴嘴5 8b係將純 水以增廣爲扇狀地朝向垂直於基板10之搬送方向的方向 上噴出，用以在鄰接之噴嘴間使噴出水重合。 在脫水部60中係如第1圖所示，爲設有配置成將基板 10之搬送線由上下夾持狀的上下一對之氣刀用之縫狀噴 嘴62、63。上側之縫狀噴嘴62係爲，藉由跨越基板10 之上面的全寬而將氣體吹附成薄膜狀，以將水滴、水分由 洗淨後之基板1 〇之上面去除。下側之縫狀噴嘴63係爲， 藉由跨越基板10之下面的全寬而將氣體吹附成薄膜狀， 以將水滴、水分由洗淨後之基板1 0之下面去除。上下之 縫狀噴嘴62、63係爲，爲了提昇水滴、水分的去除效率， 而將基板1 〇之搬送方向於側面所見爲傾斜於上游側，而 在平面所見則是傾斜於側方向。 在本實施例之搬送式基板處理裝置中，基板10爲藉由 依序通過接收部20、避液部3 0、蝕刻部40、水洗部5 0、 以及脫水部60，而在基板1 0之上面實施蝕刻處理，使上 下面被洗淨後爲進行乾燥處理。 在水洗部50之中，基板10爲依序通過第一灑水部53、 噴泡處理部54、以及第二灑水部55。在第一灑水部53中， 基板10之上面以及下面係藉由來自第一噴灑單元53 a、53a 所噴射之純水來實施噴灑處理。以將上下一組之二流體噴 12 1227035 嘴列5 6、5 6以兩段配置在基板搬送方向上所構成的噴泡 處理部54中，基板10之上面以及下面爲藉由純水霧氣而 承受噴射處理。在第二灑水部55中，爲藉由來自第二噴 灑單元5 5 a、5 5 a所噴射之純水而再度進行噴灑處理。 藉由加上噴灑處理而進行噴泡處理，基板1 〇之上面以 及下面並非僅藉由純水所淸洗（去除蝕刻液），還可使附 著在基板1 〇之上面以及下面之細微的粒子浮起、且使局 部被去除。 在噴泡處理部5 4中，係連同霧氣而由上下一組之二流 體噴嘴列56、56噴出大量的氣體，衝突至基板1〇之表面、 而飛散至上游側以及下游側，不過，在上下一組之二流體 噴嘴列5 6、5 6之上游側以及下游側上，係分別設有上下 一組之遮蔽板5 7、5 7，而使霧氣噴射部被隔離。此外， 噴泡處理部5 6之本體係藉由隔牆5 2、5 2而由前後之灑水 部5 3、5 5隔離。因此，係可有效果的防止該種霧氣之飛 散、特別是造成污點原因之朝向下游側之飛散。 在噴泡處理部5 4中、或是在霧氣噴射部之下游側中’ 爲使基板1 〇藉由輔助滾輪5 9所支撐。在此種狀態下’來 自上側之二流體噴嘴列5 6的霧氣噴射壓係被設定成大於 來自下側之二流體噴嘴列5 6的霧氣噴射壓。藉此’移動 霧氣噴射部而使基板1〇藉由霧氣噴射壓之差而持續被按 壓至輔助滾輪59,以形成爲相當穩定之狀態。其結果’ 作爲由遮蔽扳57之前端至基板1〇之表面爲止的距離爲可 形成1至3mm、亦可形成1至2mm。另外’設在隔牆52 13 1227035 上之基板通過孔的間隔係爲，直到基板1 〇之表面爲止的 距離係爲3至6mm。 此外，輔助滾輪5 9係爲用以接近霧氣噴射部，其徑値 係充分的小於搬送滾輪之徑値。具體而言，當搬送滾輪之 徑値爲45mm之情況下，輔助滾輪之徑値則以15mm左右 爲佳。 再加上，爲使上下一組之供水裝置5 8、5 8設置在位於 上下一組之二流體噴嘴列56、56之下游側之遮蔽板57、 57之更下游側、以及下游側之隔牆52之更下游側上，使 純水供給至基板1 〇之上面以及下面。因此，亦可防止因 噴泡處理造成之污點的產生、與同時造成問題之基板1 0 的乾燥。 有關於供水裝置58之配置位置，在由基板10之防止 乾燥的觀點來判斷，當上下一組之二流體噴嘴列56、56 在基板搬送方向爲一段之情況下，係必須將上下一組之供 水裝置5 8、5 8至少設在其下游側，而當上下一組之二流 體噴嘴列5 6、5 6在基板搬送方向爲兩段以上之情況下， 係必須將上下一組之供水裝置5 8、5 8至少設在最下游側 之二流體噴嘴列5 6、5 6之下游側。 有關於隔牆5 2、5 2，至少在噴泡處理部54之下游側上 具有者即可，上游側之隔牆5 2係可省略。 作爲在水洗部50中之任選處理，在上述實施例中係爲 僅採用噴泡處理，不過，除了該處理以外，亦可採用加上 刷子洗淨處理、超音波震盡（Megasonic)洗淨處理、高 14 1227035 壓灑水處理中一種或是多種之處理。刷子洗淨處理係在噴 泡處理之上游側實施，超音波震盪洗淨處理係在噴泡處理 之下游側實施，而高壓灑水處理係以在噴泡處理與超音波 震盪洗淨處理之間實施者較多。在採用刷子洗淨處理、噴 泡處理、以及超音波震盪洗淨處理之情況下，爲依序實施 第一灑水處理、刷子洗淨處理、噴泡處理、超音波震盪洗 淨處理、第二灑水處理，而超音波震盪洗淨處理係形成爲 緊接在噴泡處理之後的處理。在採用高壓灑水處理之情況 下，則其係形成爲緊接在噴泡處理之後的處理。此外，在 採用超音波震盪（Megasonic)洗淨之情況下，在其處理 部之下游側以及上游側爲形成必須要有隔牆。 在搬送滾輪中，由下方至少支撐基板1 0之兩側緣部， 藉此使其前進，不過，亦可在局部之搬送滾輪中，藉由組 合有將基板1 〇之兩側緣部由上方夾持的銷滾輪（於第2 圖至第4圖中之51’），而可確實的搬送基板10。 〔產業上利用之可能性〕 如上述說明，本發明之搬送式基板處理裝置係爲，將 基板朝水平方向搬送、通過多數之處理部，藉由多數處理 部之至少之一處來進行包含有噴泡處理之冰洗處理，其特 徵在於：在用以進行前述噴泡處理之二流體噴嘴列之上游 側以及下游側上設有霧氣飛散防止用之遮蔽板，同時，在 多數遮蔽板中之至少最下游側之遮蔽板的下游側上，爲設 有將洗淨水供給至基板表面之供水裝置，藉此，爲具有可 有效地防止在噴泡處理中造成問題之污點的產生以及基板 15 1227035 之乾燥之雙方面的問題。 【圖式簡單說明】 第1圖所示係爲本發明之一實施例的搬送式基板處理 裝置之槪略側面圖。 第2圖所示係爲該搬送式基板處理裝置之主要部的噴 泡處理部的側面圖。 第3圖係爲沿著第2圖中之A-A線所示之示意圖。 第4圖係爲沿著第2圖中之B-B線所示之示意圖。 【主要部分之代表符號說明】 · 1 〇 :基板 20 :接收部 2 1 :搬送滾輪 3 〇 :避液部 * 3 1 :搬送滾輪 40 :蝕刻部 41 :搬送滾輪 42 :噴灑單元 φ 5 0 :水洗部 5 1 ’ ：銷滾輪 5 1 :搬送滾輪 5 2 :隔牆 5 3 a :第1噴灑單元 5 3 :第1灑水部 54 :噴泡處理部 ' 16 12270351227035 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a transportable substrate processing apparatus, and is preferably applied to the manufacture of a glass substrate for a liquid crystal display device. [Prior art] A glass substrate used in a liquid crystal display device is manufactured by repeatedly performing chemical treatments such as etching and peeling on the surface of a glass substrate which is a plain material. This type of substrate processing apparatus is largely divided into a dry type and a wet type, and the wet type is divided into an intermittent type and a paper feed type. In addition, the paper feed type is further divided into a positioning type and a conveyance type achieved by roller conveyance. Among these substrate processing apparatuses, the basic structure of the conveying member is to transport the substrate in the horizontal direction and supply the processing liquid to the surface of the substrate, and it has been used in the past due to its high efficiency. Etching or peeling. In the substrate transfer device used for etching, the substrate passes through the receiving section (loading section), the liquid avoiding section, the etching section, the washing section, and the dewatering section in this order. In the etching section, the etching solution is sprayed from a plurality of spray nozzles arranged in a matrix above the substrate transfer line, and the etching solution is supplied to the substrate by passing the substrate through the spray. Overall surface. With this spraying treatment, the surface of the substrate is selectively etched except for the portion that has been coated with the shielding material. In the water washing section immediately after the etching section, pure water for washing is sprayed out by a plurality of spray nozzle sections arranged in a matrix J3 above and below the substrate transfer line. By passing the substrate through this kind of spraying, 6 1227035 cleans both surfaces of the substrate. However, the purpose of the water washing treatment immediately after the etching part is to remove and rinse the etching solution remaining on the surface of the substrate, and also to purify the particles by removing the particles from the surface of the substrate. In order to improve the ability of the latter to purify, brush washing, bubble washing, and Megasonic washing are optional to have the addition to the spraying treatment (generally in the middle of the spraying treatment). Process to proceed. The so-called bubble cleaning is to make the two fluid nozzles mixed with pure water and gas aligned in a plurality of rows in the width direction of the substrate, and the plurality of aligned nozzle rows spray pure water onto the substrate in a mist form. For the surface treatment, this type of nozzle array is arranged in one or two or more stages in the substrate conveying direction at two positions above and below the conveying line holding the substrate. Compared with brush cleaning, it is more effective in removing and even floating larger particles larger than 5 // m. Bubble cleaning is effectively removed by the smaller mist diameter. , And even the effect of floating particles to a small degree of 1 to 5 // m is more effective, while the ultrasonic vibration (Megasonic) cleaning is more effective in removing finer particles and even making them float. . Therefore, if necessary, these optional treatments are performed in a single or a combined group device in a water washing treatment. Therefore, in terms of bubble cleaning, a large amount of gas is used in order to form a fine mist, and the ejection amount thereof is more than 1000 L / min per row on each nozzle row. Because of this large amount of gas spray, the mist is widely scattered on the upstream side and downstream side of the spray position, and the stain is caused by the wide range attached to the surface of the substrate. In addition, by using a large amount of 7 1227035 gas, the surface of the substrate is easy to dry, and this event also causes the generation of stains, etc., and the problem of the main body is caused by drying the surface of the substrate. An object of the present invention is to provide a transfer type substrate processing apparatus, which is capable of effectively preventing the generation of stains that cause problems in the bubbling process and the drying of the substrate. [Summary of the Invention] In order to achieve the above object, the transfer-type substrate processing apparatus of the present invention is a transfer-type substrate processing apparatus for transferring a substrate in a horizontal direction and passing through a plurality of processing sections through at least one of the plurality of processing sections. The water washing treatment including the bubble treatment is performed here, and a shielding plate for preventing mist scattering is provided on the upstream side and the downstream side of the two fluid nozzle row for performing the aforementioned bubble treatment. On the downstream side of at least the most downstream side of the shielding plates, there is a water supply device for supplying washing water to the surface of the substrate. In the transfer-type substrate processing apparatus of the present invention, the mist-scattering prevention plates are provided on the upstream side and the downstream side of the two-fluid nozzle array to prevent the mist-scattering. The shielding plates for preventing mist scattering are arranged on the upstream side and the downstream side of the two-fluid nozzle array to enhance the air flow directly below the two-fluid nozzle array and promote the drying of the substrate. However, in most shielding plates, A water supply device for supplying washing water to the surface of the substrate is provided on the downstream side of the shielding plate at least on the most downstream side, thereby preventing such drying. Judging from the viewpoint of more effective prevention of the scattering of the mist, it is preferable that the 827027035 is provided with a partition wall which is separated by the subsequent processing section from the bubble processing section. In addition, it is preferable to make the front end of the shielding plate close to the surface of the substrate as much as possible, or to reduce the interval of the through hole of the substrate provided on the partition wall. On the other hand, judging from the viewpoint of more effectively preventing drying of the substrate, it is preferable that a water supply device for supplying washing water to the surface of the substrate is provided on the downstream side of the partition wall. In general, the distance between the through holes of the substrate provided on the partition wall to the surface of the substrate is 3 to 6 mm. Judging from the point of improving the effect of preventing the scattering of fog, 'the smaller the distance, the better, preferably 1 to 3 mm, especially 1 to 2 mm, but this distance is caused by the vibration of the substrate being transported. Due to restrictions, the system cannot obtain 1 to 3mm, especially 1 to 2mm. The distance from the front end of the shielding plate to the surface of the substrate is the same. Therefore, in order to arrange the two-fluid nozzle row for mist spraying at the position of the pass line holding the substrate up and down, the mist injection pressure from the upper two-fluid nozzle row is set higher than that from the bottom The second side of the fluid nozzle row has a mist spray pressure, and when an auxiliary roller supporting the substrate from below is provided near the mist jetting section, the substrate between the upper and lower two fluid nozzle rows can be stabilized and used as a front end of the shielding plate. The distance to the substrate surface can be formed to 1 to 3 mm, or 1 to 2 mm. That is, in order to stably convey the substrate in the bubble processing section, it is necessary to arrange the two fluid nozzle rows for mist spraying above and below the pass line holding the substrate. However, when the mist ejection pressure from the upper two-fluid nozzle row and the mist ejection pressure from the lower two-fluid nozzle row are set to be the same, the substrate becomes unstable. By setting 9 1227035 near the mist spraying section, the auxiliary roller supporting the substrate from below is set, and the mist spraying pressure from the upper two-fluid nozzle row is set higher than the mist spraying pressure from the lower two-fluid nozzle row. Thereby, it is possible to form a more stable shape when passing the substrate through other parts. As the aforementioned water supply device, a curtain-shaped nozzle that sprays the washing water continuously in the width direction onto the surface of the substrate in the form of a water film is preferably a simple structure. [Embodiment] Hereinafter, an embodiment of the present invention will be described based on the drawings. · The substrate processing apparatus of this embodiment is an etching apparatus used in the manufacture of a glass substrate for a liquid crystal display device. This substrate processing apparatus includes, as shown in FIG. 1, a receiving section 20, a liquid-avoiding section 30, an etching section 40, a water washing section 50, and a dewatering section 60, which are sequentially arranged toward the carrying direction of the substrate 10. Each part is provided with a plurality of transfer rollers 21, 31, 41, 51, and 61 that carry the horizontal support substrate 10 and carry them in the horizontal direction. The liquid-repellent portion 30 provided between the receiving portion 20 and the etching portion 40 is a buffer portion that prevents the etching solution used in the etching portion 40 from entering the receiving portion 20. In the etching section 40, a spraying unit 42 for supplying an etching solution in a spray form from above on the substrate 10 is provided above the transport line of the substrate 10. The water washing section 50 is divided into a first sprinkler section 5 3, a bubble treatment section 5 4, and a second sprinkler section 55 by two partition walls 52 and 52. In the first sprinkler section 53, there are first and second sets of first spraying units 53a, 53a, which are arranged above and below the substrate 10, and the pure water is sprayed from the substrate 10 to the top and _ 10 1227035 from below. Spread. The bubble processing unit 54 is provided with two fluid nozzle rows 56 and 56 in the upper and lower groups, and the mist is sprayed from above and below the substrate 10. The second sprinkler section 55 is provided with upper and lower second spraying units 55a and 55a, and sprays pure water from the substrate 10 from above and below from the substrate 10 above and below. The upper and lower fluid nozzle rows 5 6 and 5 6 are arranged in two stages in the conveying direction of the substrate 10. Each of the two-fluid nozzle rows 56 is provided with a plurality of two-fluid nozzles 56b, 56b,... As shown in FIG. 2 and FIG. 3. installation. Most of the two fluid nozzles 56b, 56b, ... mix pure water supplied from the water supply pipe 56c and clean gas supplied from the air supply pipe 56d to form a mist of pure water and spray it to the substrate in a curtain shape. The surface of 10 is full width. In addition, on the upstream side and the downstream side of all of the two fluid nozzle rows 56, a pair of shielding plates 5 7 and 5 7 before and after preventing the mist from scattering are provided so as to be separated from the substrate 10 by a slight gap. shape. An auxiliary roller 59 for supporting the substrate 10 in the vicinity of the mist spraying portion is provided on the inner surface of the shielding plate 57 on the lower side and on the downstream side. In addition, on the downstream side of the shielding plates 5 7 and 5 7 located on the downstream side of the fluid nozzle rows 56 and 56 of the upper and lower groups, water supply devices 5 8 and 5 8 of the upper and lower groups are provided. Furthermore, on the upstream side of the shielding plates 57 and 57 on the most upstream side, water supply devices 5 8 and 5 8 of the upper and lower groups are also provided. Each water supply device 58 is a curtain-shaped nozzle for continuously spraying a curtain-shaped water film toward the vicinity of the front end of the shielding plate 57 in the width direction above or below the substrate 10. Specifically, as shown in FIG. 4, it is provided with: a header pipe 58a extending in the horizontal direction of the conveying direction of the vertical substrate 10; a sprinkler nozzle 58b in the longitudinal direction of the header pipe 58a Installation is performed at specified intervals; the water spray nozzle 5 8b sprays pure water in a fan shape toward the direction perpendicular to the conveying direction of the substrate 10 in an enlarged manner to overlap the sprayed water between adjacent nozzles. As shown in Fig. 1, the dewatering section 60 is provided with slit-shaped nozzles 62, 63 for a pair of upper and lower air knives arranged to hold the conveying line of the substrate 10 in an up-and-down manner. The slit-shaped nozzle 62 on the upper side blows gas into a film shape across the full width of the upper surface of the substrate 10 to remove water droplets and moisture from the upper surface of the substrate 10 after the cleaning. The slit-shaped nozzle 63 on the lower side blows gas into a thin film shape across the full width of the lower surface of the substrate 10 to remove water droplets and moisture from the lower surface of the substrate 10 after cleaning. The upper and lower slit-shaped nozzles 62 and 63 are inclined to the upstream side when the conveying direction of the substrate 10 is seen from the side in order to improve the removal efficiency of water droplets and moisture, and are inclined to the side when seen from the plane. In the transfer-type substrate processing apparatus of this embodiment, the substrate 10 passes the receiving section 20, the liquid-repellent section 30, the etching section 40, the water-washing section 50, and the dewatering section 60 in this order, and is placed on the substrate 10 After the etching process is performed, the upper and lower surfaces are washed, and then a drying process is performed. In the water washing unit 50, the substrate 10 passes through the first water spraying unit 53, the bubble processing unit 54, and the second watering unit 55 in this order. In the first water spraying section 53, the upper surface and the lower surface of the substrate 10 are sprayed with pure water sprayed from the first spraying units 53a, 53a. In the bubble processing unit 54 configured by spraying the two fluids of the upper and lower groups 12 1227035 nozzle rows 5 6 and 5 6 in two stages arranged on the substrate conveying direction, the upper and lower surfaces of the substrate 10 are made of pure water mist. Withstand spray processing. In the second spraying section 55, the spraying process is performed again with pure water sprayed from the second spraying units 5a and 5a. By adding a spraying process to perform a bubbling process, the upper and lower surfaces of the substrate 10 are not only cleaned by pure water (removal of the etching solution), but fine particles attached to the upper and lower surfaces of the substrate 10 can also be made. It floats and is partially removed. In the bubble processing unit 54, a large amount of gas is ejected from the upper and lower fluid nozzle rows 56, 56 together with the mist, colliding with the surface of the substrate 10, and scattering to the upstream side and the downstream side. The upper and lower fluid nozzle rows 5 6 and 5 6 are provided with shielding plates 5 7 and 5 7 respectively on the upstream side and the downstream side of the upper and lower fluid nozzle rows so that the mist spraying portion is isolated. In addition, the present system of the bubble treatment part 56 is separated by the front and rear sprinkler parts 5 3 and 5 5 by partition walls 5 2 and 5 2. Therefore, this kind of mist can be effectively prevented from scattering, especially the scattering toward the downstream side which causes the stain. In the bubble processing section 54 or in the downstream side of the mist spraying section ', the substrate 10 is supported by the auxiliary roller 59. In this state, the mist ejection pressure from the upper two-fluid nozzle row 56 is set to be higher than the mist ejection pressure from the lower two-fluid nozzle row 56. Thereby, the mist ejection part is moved and the substrate 10 is continuously pressed to the auxiliary roller 59 by the difference of the mist ejection pressure to form a fairly stable state. As a result, the distance from the front end of the shielding plate 57 to the surface of the substrate 10 can be 1 to 3 mm or 1 to 2 mm. In addition, the interval of the substrate through-holes provided on the partition wall 52 13 1227035 is 3 to 6 mm from the surface of the substrate 10. In addition, the auxiliary roller 59 is used to approach the mist spraying portion, and its diameter 値 is sufficiently smaller than the diameter 値 of the conveying roller. Specifically, when the diameter 値 of the conveying roller is 45 mm, the diameter 値 of the auxiliary roller is preferably about 15 mm. In addition, in order for the upper and lower sets of water supply devices 5 8 and 5 8 to be arranged on the further downstream side of the shielding plates 57 and 57 located on the downstream side of the fluid nozzle rows 56 and 56 of the upper and lower sets and the downstream side partitions On the further downstream side of the wall 52, pure water is supplied above and below the substrate 100. Therefore, it is also possible to prevent the generation of stains caused by the bubbling process and the drying of the substrate 10 which causes problems at the same time. Regarding the arrangement position of the water supply device 58, judging from the viewpoint of preventing the substrate 10 from drying, when the fluid nozzle rows 56 and 56 of the upper and lower groups are in one stage, the upper and lower groups must be separated. The water supply devices 5 8 and 5 8 are provided at least on the downstream side. When the fluid nozzle rows 5 6 and 5 6 of the upper and lower groups are in two or more stages, the water supply devices of the upper and lower groups must be provided. 5 8 and 5 8 are provided at least on the downstream side of the two fluid nozzle rows 5 6 and 5 6 on the most downstream side. Regarding the partition walls 5 2 and 5 2, it is sufficient to have at least the downstream side of the bubble processing section 54, and the partition wall 5 2 on the upstream side may be omitted. As an optional treatment in the water washing section 50, in the above embodiment, only the bubble treatment is used. However, in addition to this treatment, a brush washing treatment and a megasonic washing may be used. Treatment, high 14 1227035 One or more treatments in sprinkler water treatment. The brush cleaning treatment is performed on the upstream side of the bubble treatment, the ultrasonic vibration cleaning treatment is performed on the downstream side of the bubble treatment, and the high-pressure sprinkler treatment is performed between the bubble treatment and the ultrasonic vibration washing treatment. There are many implementers. In the case of using a brush washing process, a bubble spraying process, and an ultrasonic vibration washing process, the first spraying process, the brush cleaning process, the bubble spraying process, the ultrasonic vibration washing process, and the second The water spraying treatment is performed, and the ultrasonic vibration cleaning treatment is formed immediately after the bubble spraying treatment. In the case of the high-pressure sprinkler treatment, the treatment is performed immediately after the blasting treatment. In addition, in the case of using Megasonic cleaning, a partition wall must be formed on the downstream side and upstream side of the treatment section. In the transfer roller, at least the edges of both sides of the substrate 10 are supported from below to advance it. However, in the partial transfer rollers, the edges of both sides of the substrate 10 may be combined from above. The pin roller (51 'in Figs. 2 to 4) is clamped, and the substrate 10 can be reliably conveyed. [Possibility of Industrial Utilization] As described above, the transfer-type substrate processing apparatus of the present invention transfers a substrate in a horizontal direction, passes through a plurality of processing sections, and includes at least one of the plurality of processing sections The ice-washing treatment of the bubble treatment is characterized in that a shielding plate for preventing mist scattering is provided on the upstream side and the downstream side of the two-fluid nozzle row for performing the foregoing bubble treatment. At least the downstream side of the shielding plate on the most downstream side is provided with a water supply device for supplying washing water to the surface of the substrate, thereby providing a substrate and a substrate 15 that can effectively prevent the generation of stains that cause problems during the bubbling process. 1227035 of the two problems of drying. [Brief Description of the Drawings] Fig. 1 is a schematic side view of a transfer type substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a side view of the bubble processing section of the main part of the transfer type substrate processing apparatus. Fig. 3 is a schematic view taken along the line A-A in Fig. 2. Fig. 4 is a schematic view taken along line B-B in Fig. 2. [Description of Representative Symbols of Main Parts] · 1 〇: Substrate 20: Receiving section 2 1: Transport roller 3 〇: Liquid avoidance section * 3 1: Transport roller 40: Etching section 41: Transport roller 42: Spray unit φ 5 0: Washing section 5 1 ′: Pin roller 5 1: Transport roller 5 2: Partition wall 5 3 a: First spraying unit 5 3: First spraying section 54: Bubbling processing section '16 1227035
55a :第2噴灑單元 5 5 :第2灑水部 5 6 :二流體噴嘴列 56a :首部 56c :供水管 5 6 d :供氣管 5 7 :遮蔽板 58a :首部管 5 8b :灑水噴嘴 5 8 :供水裝置 5 9 :輔助滾輪 60 :脫水部 6 1 :搬送滾輪 62 :縫狀噴嘴 63 :縫狀噴嘴55a: second spraying unit 5 5: second sprinkler 5 6: two-fluid nozzle row 56a: header 56c: water supply pipe 5 6 d: air supply pipe 5 7: shielding plate 58a: header pipe 5 8b: sprinkler nozzle 5 8: Water supply device 5 9: Auxiliary roller 60: Dewatering section 6 1: Transport roller 62: Slit nozzle 63: Slit nozzle
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