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WO2001050500A2 - Source de lumiere blanche - Google Patents

Source de lumiere blanche Download PDF

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Publication number
WO2001050500A2
WO2001050500A2 PCT/RU2000/000544 RU0000544W WO0150500A2 WO 2001050500 A2 WO2001050500 A2 WO 2001050500A2 RU 0000544 W RU0000544 W RU 0000544W WO 0150500 A2 WO0150500 A2 WO 0150500A2
Authority
WO
WIPO (PCT)
Prior art keywords
light
transformer
columns
phosphor
white light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/RU2000/000544
Other languages
English (en)
Other versions
WO2001050500A3 (fr
Inventor
Evgeny Invievich Givargizov
Vladimir Semenovich Abramov
Naum Petrovich Soshchin
Michail Evgen'evich Givargizov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to AU25623/01A priority Critical patent/AU2562301A/en
Publication of WO2001050500A2 publication Critical patent/WO2001050500A2/fr
Publication of WO2001050500A3 publication Critical patent/WO2001050500A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder

Definitions

  • This invention relates to light engineering, microelectronic components, and electron materials science.
  • White sources are known, for example, as luminescent lamps where radiation excited by low-pressure gaseous discharge of mercury vapors is transformed into visible (“white”) light by phosphor [1].
  • the luminescent lamps have some serious drawbacks:
  • White light sources are known as solid-state semiconductor light emited diodes (LED) based on gallium nitride and related compounds [2].
  • LED solid-state semiconductor light emited diodes
  • gallium nitride and related compounds [2].
  • short-wave (blue) light emitted by the diode is partially transformed by a phosphor into longer-wave (for example, yellow) light and then, being mixed with the initial blue light, gives the white radiation.
  • Standard phosphors are formed by a set of fine (micron- and submicron) crystalline grains of approximately isometric forms arranged chaotically one on another (Fig. 1).
  • 2 :Ce phosphor is used in [2].
  • the phosphor is distributed in an organic binder. Such a phosphor absorbs the initial blue radiation of the LED and emits yellow light with wave-length 565 nanometers. By mixing the two radiations, white radiation is formed.
  • a white light source includes light emitting diode and phosphor transformer.
  • the transformer is implemented as single-crystalline phosphor columns arranged on a transparent substrate. The columns are mutually parallel, forms angles 10° to 90° with the substrate, have cross-sections of various shapes. Heights of the columns exceed their diameter. Gaps exist between the columns, the gaps being filled by high-refractive material.
  • the light-emitting diode emits light in the range 440-480 nanometers with the absorption coefficient more than 10 6 m "1 , whereas the transformer emits light with the wave-length in the range 560-590 nanometers at the ratio of yellow-light power, generated by the transformer, to the blue-light power conserved after passing the columns, more than 2: 1.
  • the transformer is placed on the output surface of the light-emitting diode being connected with it via an immersion medium that has a refraction coefficient lower than the refraction coefficient of the phosphor.
  • the ratio of the height of the columns to their diameter is not less than 2.
  • the transformer can be faced to the surface of the light-emitting diode by either its substrate or by the columns.
  • the volume of the columns takes more than 90% of the transformer.
  • Fig. 1 A scheme of the standard phosphor consisting of approximately isometric crystalline grains: 1 - light or electron beam; 2 - transparent substrate.
  • Fig. 2. A scheme for propagation of light in columnar crystals: 1 - light or electron beam; 2 - transparent substrate.
  • Fig. 3 A scheme of white light source that contains a light-emitting diode, a phosphor transformer, and an immersion connecting layer: 1 - the light-emitting diode; 2 - the immersion layer; 3 - a transparent substrate; 4 - luminescent (phosphor) columns; 5 - gaps between the columns filled with a low-melting-point light-absorbing material.
  • Fig. 4. Two versions of the transformer arrangement: a - by the columns faced to the light-emitting diode; b - by the substrate faced to the light-emitting diode.
  • the light is channeled by passing it through elongated phosphor crystalline grains. This is implemented with using phosphor having columnar structure proposed in [3]. In such phosphors, the light propagates along the columns reflecting from their walls according to the full internal reflection Fig. 2). Typically, it is undergoing only a small losses.
  • the columnar phosphors contain no organic binder.
  • FIG. 3 A scheme of the proposed white light source is depicted in Fig. 3.
  • An immersion layer is placed between the light source and the transformer.
  • the layer can contain various transparent substances such as silicones, polymers, epoxies, low- melting point eutectics such as KCl+NaCl+LiCl+MgCl etc.
  • the light from the light-emitting diode arrives through the immersion layer to butt-ends of the columns.
  • the blue light propagates along the columns, it is transformed into yellow light that is a "complementary" to the blue one.
  • phosphor columns are created that are able a part of the blue light arriving from the light-emitting diode to transform into yellow light.
  • the ratio of the formed yellow light to the remaining part of the blue light (after passing the columns) should be (in power or, better, in the number of quantums) about or slightly more than 2:1.
  • Phosphor columns are formed of light-c.onductive thermal-conductive inorganic material. They are attached to an inorganic (glass) substrate by a large contact area.
  • the good thermal conductivity provides an advantage to the phosphor transformer and, in such a way, to all the light source. This advantage is ensured also by the fact that total volume of the columns takes more than 90% of the transformer. Remaining part of the phosphor, namely gaps between the columns, are filled with electroconductive (accordingly, good-thermal-conductive) high-refractive material.
  • the white light source is ensured by the fact that it is characterized by a good spectral matching between the wavelength of the light-emitting diode (450-480 nm) and the maximum exciting spectrum of the phosphor transformer used (440-475 nm).
  • High absorption coefficient of the phosphor used (10 6 - 5.10 6 m "1 ) allows to reach a high (more than 50-60%) level abso ⁇ tion of gallium nitride light-emitting diode even at a small (about several micrometers) height of the phosphor columns.
  • the yellow light formed contains about 70% quantums; together with 30% remaining quantums of the blue light bright white light is generated.
  • the columnar phosphor is produced of a solid solution of ZnS:CdS having the proportion 70:30 to 50:50 doped with copper at concentration 1.10 " to 1.10 " gram/gram (gram Cu/gram ZnS+CdS).
  • the columnar phosphor is prepared by vapor deposition according to the patent application [3].
  • the structure obtained is filled by a high-refractive low-melting-point material, such as Bi 2 O 3 -B O 3 , is ground and polished.
  • a high-refractive low-melting-point material such as Bi 2 O 3 -B O 3
  • the white light sources have numerous applications: light sources of domestic and industrial applications;

Landscapes

  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne une source de lumière blanche comprenant une diode électroluminescente et un transformateur au phosphore. La diode émet une lumière bleue qui est appliquée sur le transformateur constitué de phosphore colonnaire monocristallin. Une partie de la lumière, plus de la moitié en quantums, mélangée, est transformée en quantums jaunes. Les deux parties mélangées permettent d'obtenir une lumière blanche. Grâce à la structure colonnaire du transformateur, la lumière blanche possède une nature directive, ce qui élargit le spectre des applications des sources de lumière blanche.
PCT/RU2000/000544 1999-12-30 2000-12-29 Source de lumiere blanche Ceased WO2001050500A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU25623/01A AU2562301A (en) 1999-12-30 2000-12-29 White light source

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99127926/09A RU2214073C2 (ru) 1999-12-30 1999-12-30 Источник белого света
RU99127926 1999-12-30

Publications (2)

Publication Number Publication Date
WO2001050500A2 true WO2001050500A2 (fr) 2001-07-12
WO2001050500A3 WO2001050500A3 (fr) 2001-12-20

Family

ID=20228919

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2000/000544 Ceased WO2001050500A2 (fr) 1999-12-30 2000-12-29 Source de lumiere blanche

Country Status (3)

Country Link
AU (1) AU2562301A (fr)
RU (1) RU2214073C2 (fr)
WO (1) WO2001050500A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2219622C1 (ru) * 2002-10-25 2003-12-20 Закрытое акционерное общество "Светлана-Оптоэлектроника" Полупроводниковый источник белого света
US6933502B2 (en) * 2001-08-27 2005-08-23 Canon Kabushiki Kaisha Radiation detection device and system, and scintillator panel provided to the same
US7125501B2 (en) 2003-04-21 2006-10-24 Sarnoff Corporation High efficiency alkaline earth metal thiogallate-based phosphors
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
WO2009119034A1 (fr) 2008-03-26 2009-10-01 Panasonic Corporation Dispositif émetteur de lumière à semiconducteur

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101209488B1 (ko) 2004-07-06 2012-12-07 라이트스케이프 머티어리얼스, 인코포레이티드 효율적인, 녹색 발광 인광체 및 적색 발광 인광체와의 조합
EP1801840A4 (fr) * 2004-09-20 2010-06-02 Givargizov Mikhail Evgenievich Structure a colonnes, procede de sa fabrication et dispositifs construits sur sa base
RU2418340C2 (ru) * 2004-09-29 2011-05-10 Михаил Евгеньевич Гиваргизов Столбчатая структура и устройства на ее основе
WO2006049533A2 (fr) * 2004-11-05 2006-05-11 Mikhail Evgenjevich Givargizov Dispositifs rayonnants et procedes de fabrication correspondants
BRPI0517584B1 (pt) * 2004-12-22 2017-12-12 Seoul Semiconductor Co., Ltd Lighting device
US7276183B2 (en) 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US8906262B2 (en) 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
RU2301475C1 (ru) * 2005-12-09 2007-06-20 Общество с ограниченной ответственностью Научно-производственное предприятие "Экосвет" Светоизлучающий узел, способ создания свечения светоизлучающего узла и устройство для осуществления способа создания свечения светоизлучающего узла
CN101536199A (zh) * 2006-11-10 2009-09-16 皇家飞利浦电子股份有限公司 包括单片陶瓷发光转换器的照明系统
EP2132802B1 (fr) * 2007-03-30 2013-01-09 The Regents of the University of Michigan Oled avec couplage de sortie de lumière optimisé
DE102007043355A1 (de) * 2007-09-12 2009-03-19 Lumitech Produktion Und Entwicklung Gmbh LED-Modul, LED-Leuchtmittel und LED Leuchte für die energie-effiziente Wiedergabe von weißem Licht
RU2350834C1 (ru) * 2007-11-26 2009-03-27 Юлия Алексеевна Щепочкина Светильник
CA2774229A1 (fr) * 2009-09-17 2011-03-24 Koninklijke Philips Electronics N.V. Dispositif d'eclairage d'apparence blanche a l'etat eteint
BR112012022991A8 (pt) * 2010-03-16 2018-04-03 Koninklijke Philips Electronics Nv Aparelho de iluminação, método de fabricação para fabricar um aparelho de iluminação e método de iluminação
RU2424598C1 (ru) * 2010-03-30 2011-07-20 Общество с ограниченной ответственностью "Научно-производственный центр оптико-электронных приборов "ОПТЭЛ" (ООО "НПЦ ОЭП "ОПТЭЛ") Светодиод зеленого свечения с применением люминофора
NL2008849C2 (en) * 2012-05-22 2013-11-25 Robertus Gerardus Alferink Luminaire for long day-lighting.
PT3008374T (pt) * 2013-08-01 2017-06-15 Philips Lighting Holding Bv Disposição emissora de luz com espetro de saída adaptado
RU2549406C1 (ru) * 2013-09-26 2015-04-27 Открытое акционерное общество "Институт пластмасс имени Г.С. Петрова" Полимерная люминесцентная композиция для получения белого света, возбуждаемая синим светодиодом

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JPS58223292A (ja) * 1982-06-19 1983-12-24 株式会社デンソー エレクトロルミネツセンス素子
US5283501A (en) * 1991-07-18 1994-02-01 Motorola, Inc. Electron device employing a low/negative electron affinity electron source
RU2073963C1 (ru) * 1992-03-10 1997-02-20 Куприянов Владимир Дмитриевич Способ получения гибкого электролюминесцентного источника света
CN1127749C (zh) * 1997-10-27 2003-11-12 结晶及技术有限公司 具有柱形结构的阴极发光屏及其制备方法
RU2142661C1 (ru) * 1998-12-29 1999-12-10 Швейкин Василий Иванович Инжекционный некогерентный излучатель

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933502B2 (en) * 2001-08-27 2005-08-23 Canon Kabushiki Kaisha Radiation detection device and system, and scintillator panel provided to the same
US6963070B2 (en) 2001-08-27 2005-11-08 Canon Kabushiki Kaisha Radiation detection device and system, and scintillator panel provided to the same
US6974955B2 (en) 2001-08-27 2005-12-13 Canon Kabushiki Kaisha Radiation detection device and system, and scintillator panel provided to the same
RU2219622C1 (ru) * 2002-10-25 2003-12-20 Закрытое акционерное общество "Светлана-Оптоэлектроника" Полупроводниковый источник белого света
WO2004038815A1 (fr) * 2002-10-25 2004-05-06 'svetlana-Optoelektronika' Source semi-conductrice de lumiere blanche
US7125501B2 (en) 2003-04-21 2006-10-24 Sarnoff Corporation High efficiency alkaline earth metal thiogallate-based phosphors
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
WO2009119034A1 (fr) 2008-03-26 2009-10-01 Panasonic Corporation Dispositif émetteur de lumière à semiconducteur
US8337032B2 (en) 2008-03-26 2012-12-25 Panasonic Corporation Semiconductor light-emitting apparatus
CN101960619B (zh) * 2008-03-26 2013-06-26 松下电器产业株式会社 半导体发光装置

Also Published As

Publication number Publication date
RU2214073C2 (ru) 2003-10-10
WO2001050500A3 (fr) 2001-12-20
AU2562301A (en) 2001-07-16

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