WO1999031305A1 - Dispositif de mesure et de controle de la solidification d'un materiau conducteur de l'electricite - Google Patents
Dispositif de mesure et de controle de la solidification d'un materiau conducteur de l'electricite Download PDFInfo
- Publication number
- WO1999031305A1 WO1999031305A1 PCT/FR1998/002734 FR9802734W WO9931305A1 WO 1999031305 A1 WO1999031305 A1 WO 1999031305A1 FR 9802734 W FR9802734 W FR 9802734W WO 9931305 A1 WO9931305 A1 WO 9931305A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resistance
- load
- point
- measurement
- differential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
Definitions
- the present invention relates to a measuring device and method suitable for controlling the solidification of a single crystal, obtained for example according to the Czochralski, Bridgman or Stockbarger methods both in their terrestrial and spatial realization.
- This device and this method are compatible with the solidification systems of an electrically conductive doped material, described in documents EP-246,340 and EP-549,449.
- the device relating to the invention can either replace the instrumentation existing, or be grafted to it.
- the compatibility and the complementarity of the systems make it possible to favor the diagnosis concerning the developed structure.
- the existing devices described in the documents cited above do not mention the measurement or control of the characteristic that is the resistivity of the crystal formed.
- the conventional measurement method is relatively simple. A stabilized current flows through the charge which is being solidified. By a so-called “four-wire” method, the voltage across it is recovered. This voltage is directly proportional to the resistance of the load. During solidification, the variation in resistance is approximately 10 to 15%, at most, of the overall value of the load.
- Figure 1 illustrates a block diagram of a method of the prior art. This is an example of a filler used for the formation of any metal alloy.
- the load has an approximate diameter of approximately 6 mm and a length of 1 m.
- zone 2 represents the zone melted by the fixed and mobile ovens.
- zone 8 known as “Bridgman”, corresponds to the zone subjected to one or more successive solidifications by virtue of the movement of the mobile oven which will, depending on the direction of movement, either melt the Bridgman zone or solidify it.
- the overall load resistance is the result of the sum of the various resistive zones subjected to the thermal gradient of the ovens.
- the invention proposes to carry out a differential resistance measurement between two parts of the sample, for example between two halves of the sample.
- the subject of the invention is a device for solidifying an electrically conductive material, characterized in that it comprises means for differential measurement of resistance of a charge of conductive material, between a first point located in a solid portion of the charge and a second point located in a liquid portion, and between a third point located in another solid portion of the charge and the second point.
- Such a device makes it possible to extract the variation of the resistance, independently of the absolute value of the load resistance. However, the latter is much greater than the variations themselves.
- the device according to the invention therefore improves the accuracy with regard to variations which may be small.
- the differential measurement means include means for measuring a first voltage Vi, between the first and second points, and a second voltage V 2 , between the second and third points.
- the first voltage is for example measured between a first electrode, applied to the first point and a second electrode, called recovery electrode and applied to the second point.
- the second voltage is then taken between the recovery electrode and a third electrode applied to the third point.
- the voltage measurement means comprise for example a differential transformer.
- the second point is located halfway between the two ends of the liquid part of the charge.
- the device further comprises a potentiometer arranged in series between a first and a second primary winding of the transformer and electrically connected to the second voltage measurement point.
- - Figure 1 shows a device known from the prior art
- - Figure 2 shows a differential resistance measurement diagram, according to the invention.
- FIG. 3 shows another embodiment of the invention.
- FIG. 4 shows an electrical assembly of a device according to the invention.
- FIG. 5 illustrates an example of load for a measurement according to the invention.
- a charge comprises, inside a crucible 23, a liquid part 20 and two solid side parts 22, 24.
- a source 16 allows supplying alternating current to a circuit closed by the load 20, 22, 24.
- Three electrodes 26, 28, 30 make it possible to take two voltages Vi and V 2 .
- One of them, called recovery electrode 30, is introduced into the liquid part of the load. The other two are in contact with the solid part of the load.
- This arrangement separates the overall resistance of the load into two parts.
- the Vj. is, for example, the reflection of the part of the resistance which evolves with the movement of the furnace, the sample V 2 then being the reflection of the part of the fixed resistance, the latter serving as a reference.
- the use of a differential transformer 32 makes it possible to recover the voltage V s , which has the expression:
- V s K (V ⁇ -V 2 ) where K is a coefficient depending on the transformer used.
- Such a device makes it possible to extract the variation of the resistance alone, and thereby eliminates the absolute value of the resistance of the load. Since the latter is much greater than the variations themselves, direct measurement greatly limits the accuracy of the variations. For example if R (load) has the value 20 m ⁇ , a measurement to 10 ⁇ 4 makes it possible to obtain the true value to within 2 ⁇ . If the variations due to the movement of the mobile oven are around 1 m ⁇ , we obtain a real precision of 2.10 "3 for this variation. On the other hand, if only the variation of 1 m ⁇ can be taken into account, then we find the precision of 10 " 4 and the value of the variation from 1 m ⁇ to 0.1 ⁇ is obtained.
- This example illustrates the advantage of such a device, which improves the precision with regard to variations which may be very small.
- the means for measuring the voltage V s can be connected to means 33 for calculating the resistance which are themselves connected to display and / or storage means.
- these means can allow the transmission of data relating to the differential resistance to a microcomputer 37, for example for piloting or controlling the solidification device.
- the configuration described above is suitable for perfectly symmetrical loads. This is not always the case. Indeed, in some cases, the crucible filling tube is the only possible place to install the sampling electrode. However, this tube can be off-center, to allow the mobile oven a maximum displacement (for example of the order of 120 mm).
- N s number of turns in secondary school.
- V 2 R 2 xl.
- the potentiometer 34 catches the potential differences between Vi and V 2 due to the mechanical off-center of point 40.
- V ⁇ (j ⁇ L + r 2 ) + j ⁇ LxV 2 II T -; r JC ⁇ L + r ⁇ j ⁇ L + r 2 ) + ⁇ 2 L 2 and:
- V s 0, and that we impose, by construction of mutual inductances Mi and M 2 equal or similar, the voltage V s is equal to:
- V " ⁇ (j ⁇ L + r) + j ⁇ LxV 2 - V 2 (j ⁇ L + r) - j ⁇ LxV V S ⁇ j ⁇ M s x -
- N s number of turns in secondary school
- the sensitivity depends on the setting. But, as the following numerical example will show, the setting has little influence.
- This value corresponds to the lengths of 508 mm (mobile side) and 380 mm (fixed side) which turn out to be lengths used for resistance measurement.
- the length of 508 mm corresponds to Ri
- the length of 380 mm corresponds to R 2 .
- the oven having returned (dimension 0), the total resistance of the load reaches 21.6 m ⁇ after having carried out the melting F 0 and the solidification Si.
- the gradient zones are the same, fixed side and mobile side.
- the additional solid length (mobile side) is very close to that at room temperature, since it is located after the cold well. If we neglect, at first, the slight increase in cross-section in the 120 mm zone, we can estimate the maximum possible difference between Ri and R 2 . (The increase in section reduces the gap).
- the difference in length of the zones is: 377-
- the resistance of a piece of 128 mm load at room temperature is:
- the mobile oven having returned to dimension 0, the resistance difference between the two halves is relatively smaller when the ovens are raised in temperature than when the temperature is room temperature.
- RI is the cause of all the variation.
- the variation is 3.36m ⁇ .
- the sensitivity depends on the setting, and the new position of the balancing potentiometer can be recalculated to compensate for the maximum variation, namely:
- a range D of displacement D of the mobile oven corresponds to the range of variation of the resistance indicated by ⁇ R D in FIG. 6.
- FIG. 7 is an enlarged representation of the curves I and II over this range.
- the arrows A, B, C represent the settings at dimensions 0 mm, 60 mm and 120 mm.
- the values Si and S 2 are the sensitivities obtained for a balancing performed at the 0 mm dimension
- the values S 3 and S are the sensitivities obtained for a balancing performed at the 120 mm dimension.
- the respective sensitivities of S m and S f will change according to the curves (S fixed , S mob iie), the dimension varying in a completely linear fashion.
- the sensitivities obtained at the 60 mm dimension will be those found between the 0 mm dimension and the 120 mm dimension.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98962471A EP1042543A1 (fr) | 1997-12-17 | 1998-12-15 | Dispositif de mesure et de controle de la solidification d'un materiau conducteur de l'electricite |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR97/16014 | 1997-12-17 | ||
| FR9716014A FR2772394B1 (fr) | 1997-12-17 | 1997-12-17 | Dispositif de mesure de la solidification d'un materiau conducteur de l'electricite, dope, et de controle en continu de sa teneur en dopant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1999031305A1 true WO1999031305A1 (fr) | 1999-06-24 |
Family
ID=9514731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FR1998/002734 Ceased WO1999031305A1 (fr) | 1997-12-17 | 1998-12-15 | Dispositif de mesure et de controle de la solidification d'un materiau conducteur de l'electricite |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1042543A1 (fr) |
| FR (1) | FR2772394B1 (fr) |
| WO (1) | WO1999031305A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2811082A1 (fr) * | 2000-06-28 | 2002-01-04 | Commissariat Energie Atomique | Dispositif et procede de determination d'au moins une caracteristique d'une interface entre deux phases d'un materiau conducteur de l'electricite |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4595427A (en) * | 1984-10-22 | 1986-06-17 | The Royal Institution For The Advancement Of Learning (Mcgill University) | Annealing process control method and apparatus |
| FR2597884A1 (fr) * | 1986-04-28 | 1987-10-30 | Commissariat Energie Atomique | Procede et dispositif de controle en continu de la surfusion du front de solidification d'un monocristal en cours d'elaboration et application au controle de la croissance d'un crital |
| EP0549449A1 (fr) * | 1991-12-23 | 1993-06-30 | Commissariat A L'energie Atomique | Dispositif de solidification d'un matériau conducteur de l'électricité dopé et de contrôle en continu de sa teneur en dopant |
-
1997
- 1997-12-17 FR FR9716014A patent/FR2772394B1/fr not_active Expired - Fee Related
-
1998
- 1998-12-15 EP EP98962471A patent/EP1042543A1/fr not_active Withdrawn
- 1998-12-15 WO PCT/FR1998/002734 patent/WO1999031305A1/fr not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4595427A (en) * | 1984-10-22 | 1986-06-17 | The Royal Institution For The Advancement Of Learning (Mcgill University) | Annealing process control method and apparatus |
| FR2597884A1 (fr) * | 1986-04-28 | 1987-10-30 | Commissariat Energie Atomique | Procede et dispositif de controle en continu de la surfusion du front de solidification d'un monocristal en cours d'elaboration et application au controle de la croissance d'un crital |
| EP0246940A1 (fr) * | 1986-04-28 | 1987-11-25 | Commissariat A L'energie Atomique | Procédé et dispositif de contrôle en continu de la surfusion du front de solidification d'un monocristal en cours d'elaboration et application au contrôle de la croissance d'un cristal |
| EP0549449A1 (fr) * | 1991-12-23 | 1993-06-30 | Commissariat A L'energie Atomique | Dispositif de solidification d'un matériau conducteur de l'électricité dopé et de contrôle en continu de sa teneur en dopant |
Non-Patent Citations (1)
| Title |
|---|
| WADLEY ET AL: "Methods for liquid-solid interface shape and location discrimination during eddy current sensing of Bridgman Growth", JOURNAL OF CRYSTAL GROWTH., vol. 172, 3 January 1997 (1997-01-03), AMSTERDAM NL, pages 313 - 322, XP004060786 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2772394B1 (fr) | 2000-01-14 |
| EP1042543A1 (fr) | 2000-10-11 |
| FR2772394A1 (fr) | 1999-06-18 |
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