WO1999031305A1 - Device for measuring and controlling the solidification of an electrically conductive material - Google Patents
Device for measuring and controlling the solidification of an electrically conductive material Download PDFInfo
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- WO1999031305A1 WO1999031305A1 PCT/FR1998/002734 FR9802734W WO9931305A1 WO 1999031305 A1 WO1999031305 A1 WO 1999031305A1 FR 9802734 W FR9802734 W FR 9802734W WO 9931305 A1 WO9931305 A1 WO 9931305A1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
Definitions
- the present invention relates to a measuring device and method suitable for controlling the solidification of a single crystal, obtained for example according to the Czochralski, Bridgman or Stockbarger methods both in their terrestrial and spatial realization.
- This device and this method are compatible with the solidification systems of an electrically conductive doped material, described in documents EP-246,340 and EP-549,449.
- the device relating to the invention can either replace the instrumentation existing, or be grafted to it.
- the compatibility and the complementarity of the systems make it possible to favor the diagnosis concerning the developed structure.
- the existing devices described in the documents cited above do not mention the measurement or control of the characteristic that is the resistivity of the crystal formed.
- the conventional measurement method is relatively simple. A stabilized current flows through the charge which is being solidified. By a so-called “four-wire” method, the voltage across it is recovered. This voltage is directly proportional to the resistance of the load. During solidification, the variation in resistance is approximately 10 to 15%, at most, of the overall value of the load.
- Figure 1 illustrates a block diagram of a method of the prior art. This is an example of a filler used for the formation of any metal alloy.
- the load has an approximate diameter of approximately 6 mm and a length of 1 m.
- zone 2 represents the zone melted by the fixed and mobile ovens.
- zone 8 known as “Bridgman”, corresponds to the zone subjected to one or more successive solidifications by virtue of the movement of the mobile oven which will, depending on the direction of movement, either melt the Bridgman zone or solidify it.
- the overall load resistance is the result of the sum of the various resistive zones subjected to the thermal gradient of the ovens.
- the invention proposes to carry out a differential resistance measurement between two parts of the sample, for example between two halves of the sample.
- the subject of the invention is a device for solidifying an electrically conductive material, characterized in that it comprises means for differential measurement of resistance of a charge of conductive material, between a first point located in a solid portion of the charge and a second point located in a liquid portion, and between a third point located in another solid portion of the charge and the second point.
- Such a device makes it possible to extract the variation of the resistance, independently of the absolute value of the load resistance. However, the latter is much greater than the variations themselves.
- the device according to the invention therefore improves the accuracy with regard to variations which may be small.
- the differential measurement means include means for measuring a first voltage Vi, between the first and second points, and a second voltage V 2 , between the second and third points.
- the first voltage is for example measured between a first electrode, applied to the first point and a second electrode, called recovery electrode and applied to the second point.
- the second voltage is then taken between the recovery electrode and a third electrode applied to the third point.
- the voltage measurement means comprise for example a differential transformer.
- the second point is located halfway between the two ends of the liquid part of the charge.
- the device further comprises a potentiometer arranged in series between a first and a second primary winding of the transformer and electrically connected to the second voltage measurement point.
- - Figure 1 shows a device known from the prior art
- - Figure 2 shows a differential resistance measurement diagram, according to the invention.
- FIG. 3 shows another embodiment of the invention.
- FIG. 4 shows an electrical assembly of a device according to the invention.
- FIG. 5 illustrates an example of load for a measurement according to the invention.
- a charge comprises, inside a crucible 23, a liquid part 20 and two solid side parts 22, 24.
- a source 16 allows supplying alternating current to a circuit closed by the load 20, 22, 24.
- Three electrodes 26, 28, 30 make it possible to take two voltages Vi and V 2 .
- One of them, called recovery electrode 30, is introduced into the liquid part of the load. The other two are in contact with the solid part of the load.
- This arrangement separates the overall resistance of the load into two parts.
- the Vj. is, for example, the reflection of the part of the resistance which evolves with the movement of the furnace, the sample V 2 then being the reflection of the part of the fixed resistance, the latter serving as a reference.
- the use of a differential transformer 32 makes it possible to recover the voltage V s , which has the expression:
- V s K (V ⁇ -V 2 ) where K is a coefficient depending on the transformer used.
- Such a device makes it possible to extract the variation of the resistance alone, and thereby eliminates the absolute value of the resistance of the load. Since the latter is much greater than the variations themselves, direct measurement greatly limits the accuracy of the variations. For example if R (load) has the value 20 m ⁇ , a measurement to 10 ⁇ 4 makes it possible to obtain the true value to within 2 ⁇ . If the variations due to the movement of the mobile oven are around 1 m ⁇ , we obtain a real precision of 2.10 "3 for this variation. On the other hand, if only the variation of 1 m ⁇ can be taken into account, then we find the precision of 10 " 4 and the value of the variation from 1 m ⁇ to 0.1 ⁇ is obtained.
- This example illustrates the advantage of such a device, which improves the precision with regard to variations which may be very small.
- the means for measuring the voltage V s can be connected to means 33 for calculating the resistance which are themselves connected to display and / or storage means.
- these means can allow the transmission of data relating to the differential resistance to a microcomputer 37, for example for piloting or controlling the solidification device.
- the configuration described above is suitable for perfectly symmetrical loads. This is not always the case. Indeed, in some cases, the crucible filling tube is the only possible place to install the sampling electrode. However, this tube can be off-center, to allow the mobile oven a maximum displacement (for example of the order of 120 mm).
- N s number of turns in secondary school.
- V 2 R 2 xl.
- the potentiometer 34 catches the potential differences between Vi and V 2 due to the mechanical off-center of point 40.
- V ⁇ (j ⁇ L + r 2 ) + j ⁇ LxV 2 II T -; r JC ⁇ L + r ⁇ j ⁇ L + r 2 ) + ⁇ 2 L 2 and:
- V s 0, and that we impose, by construction of mutual inductances Mi and M 2 equal or similar, the voltage V s is equal to:
- V " ⁇ (j ⁇ L + r) + j ⁇ LxV 2 - V 2 (j ⁇ L + r) - j ⁇ LxV V S ⁇ j ⁇ M s x -
- N s number of turns in secondary school
- the sensitivity depends on the setting. But, as the following numerical example will show, the setting has little influence.
- This value corresponds to the lengths of 508 mm (mobile side) and 380 mm (fixed side) which turn out to be lengths used for resistance measurement.
- the length of 508 mm corresponds to Ri
- the length of 380 mm corresponds to R 2 .
- the oven having returned (dimension 0), the total resistance of the load reaches 21.6 m ⁇ after having carried out the melting F 0 and the solidification Si.
- the gradient zones are the same, fixed side and mobile side.
- the additional solid length (mobile side) is very close to that at room temperature, since it is located after the cold well. If we neglect, at first, the slight increase in cross-section in the 120 mm zone, we can estimate the maximum possible difference between Ri and R 2 . (The increase in section reduces the gap).
- the difference in length of the zones is: 377-
- the resistance of a piece of 128 mm load at room temperature is:
- the mobile oven having returned to dimension 0, the resistance difference between the two halves is relatively smaller when the ovens are raised in temperature than when the temperature is room temperature.
- RI is the cause of all the variation.
- the variation is 3.36m ⁇ .
- the sensitivity depends on the setting, and the new position of the balancing potentiometer can be recalculated to compensate for the maximum variation, namely:
- a range D of displacement D of the mobile oven corresponds to the range of variation of the resistance indicated by ⁇ R D in FIG. 6.
- FIG. 7 is an enlarged representation of the curves I and II over this range.
- the arrows A, B, C represent the settings at dimensions 0 mm, 60 mm and 120 mm.
- the values Si and S 2 are the sensitivities obtained for a balancing performed at the 0 mm dimension
- the values S 3 and S are the sensitivities obtained for a balancing performed at the 120 mm dimension.
- the respective sensitivities of S m and S f will change according to the curves (S fixed , S mob iie), the dimension varying in a completely linear fashion.
- the sensitivities obtained at the 60 mm dimension will be those found between the 0 mm dimension and the 120 mm dimension.
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- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
DISPOSITIF DE MESURE ET DE CONTROLE DE LA SOLIDIFICATION D'UN MATERIAU CONDUCTEUR DE L'ELECTRICITEDEVICE FOR MEASURING AND MONITORING THE SOLIDIFICATION OF AN ELECTRICALLY CONDUCTIVE MATERIAL
Domaine technique et art antérieurTechnical field and prior art
La présente invention a pour objet un dispositif et un procédé de mesure adaptés au contrôle de la solidification d'un monocristal, obtenu par exemple selon les méthodes de Czochralski, de Bridgman ou de Stockbarger tant dans leur réalisation terrestre que spatiale. Ce dispositif et ce procédé sont compatibles avec les systèmes de solidification d'un matériau dopé conducteur de l'électricité, décrits dans les documents EP-246 340 et EP-549 449. Le dispositif concernant l'invention peut, soit remplacer l'instrumentation existante, soit se greffer à elle. La compatibilité et la complémentarité des systèmes permettent de favoriser le diagnostic concernant la structure élaborée. Les dispositifs existants décrits dans les documents cités ci-dessus ne font pas mention de la mesure ou du contrôle de la caractéristique qu'est la résistivité du cristal formé.The present invention relates to a measuring device and method suitable for controlling the solidification of a single crystal, obtained for example according to the Czochralski, Bridgman or Stockbarger methods both in their terrestrial and spatial realization. This device and this method are compatible with the solidification systems of an electrically conductive doped material, described in documents EP-246,340 and EP-549,449. The device relating to the invention can either replace the instrumentation existing, or be grafted to it. The compatibility and the complementarity of the systems make it possible to favor the diagnosis concerning the developed structure. The existing devices described in the documents cited above do not mention the measurement or control of the characteristic that is the resistivity of the crystal formed.
Une mesure précise de cette caractéristique renseigne sur la structure en cours de formation et surtout sur ses anomalies. Plusieurs systèmes existants exploitent cette caractéristique (sur un échantillon séparé) pour connaître la position et la vitesse de déplacement de l'interface mobile. Mais cette caractéristique n'est pas utilisée en analyse de structure. La zone Bridgman (ou zone de solidification) évolue en température à mesure que le cristal se forme. Mais la résistivité de cette zone évolue également avec la structure formée. Pour un déplacement linéaire du four on obtient une évolution quasi-linéaire de la résistance.A precise measurement of this characteristic provides information on the structure being formed and especially on its anomalies. Several existing systems exploit this characteristic (on a separate sample) to know the position and the speed of movement of the mobile interface. However, this characteristic is not used in structure analysis. The Bridgman zone (or solidification zone) changes in temperature as the crystal is formed. But the resistivity of this area also changes with the structure formed. For a linear displacement of the furnace one obtains a quasi-linear evolution of the resistance.
La méthode de mesure classique est relativement simple. Un courant stabilisé traverse la charge qui est en cours de solidification. Par une méthode dite "quatre fils" la tension aux bornes de celle-ci est récupérée. Cette tension est directement proportionnelle à la résistance de la charge. Au cours d'une solidification, la variation de la résistance est d'environ 10 à 15%, au maximum, de la valeur globale de la charge.The conventional measurement method is relatively simple. A stabilized current flows through the charge which is being solidified. By a so-called "four-wire" method, the voltage across it is recovered. This voltage is directly proportional to the resistance of the load. During solidification, the variation in resistance is approximately 10 to 15%, at most, of the overall value of the load.
La figure 1 illustre un schéma de principe d'un procédé de l'art antérieur. Il s'agit là de l'exemple d'une charge utilisée pour la formation d'un alliage métallique quelconque. La charge a un diamètre approximatif d'environ 6 mm et une longueur de 1 m.Figure 1 illustrates a block diagram of a method of the prior art. This is an example of a filler used for the formation of any metal alloy. The load has an approximate diameter of approximately 6 mm and a length of 1 m.
Elle est située à l'intérieur d'un dispositif comportant par exemple deux fours, un four fixe et un mobile, tel que décrit dans le document EP-246 940. Ce montage des fours n'est pas représenté sur la figure 1.It is located inside a device comprising, for example, two ovens, a stationary oven and a mobile, as described in document EP-246 940. This assembly of the ovens is not shown in FIG. 1.
Quatre zones distinctes 2, 4, 6, 8 sont représentées sur cette figure. Les deux zones 2, 4 aux extrémités de la charge représentent les parties restant toujours solides. La zone 6 centrale représente la zone fondue par les fours fixe et mobile. Enfin, la zone 8 dite "Bridgman", correspond à la zone soumise à une ou plusieurs solidifications successives grâce au déplacement du four mobile qui va, selon le sens du déplacement, soit fondre la zone Bridgman, soit la solidifier.Four distinct zones 2, 4, 6, 8 are shown in this figure. The two zones 2, 4 at the ends of the load represent the parts still remaining solid. The central zone 6 represents the zone melted by the fixed and mobile ovens. Finally, zone 8 known as "Bridgman", corresponds to the zone subjected to one or more successive solidifications by virtue of the movement of the mobile oven which will, depending on the direction of movement, either melt the Bridgman zone or solidify it.
Une alimentation alternative 16 fournit un courant alternatif I=Imsinωt qui circule entre deux points 12 et 14 d'entrée et de sortie du courant situés sur les faces externes des deux zones solides 2, 4.An alternating supply 16 supplies an alternating current I = I m sinωt which flows between two current input and output points 12 and 14 located on the external faces of the two solid zones 2, 4.
La résistance globale de la charge est le résultat de la somme des diverses zones résistives soumises au gradient thermique des fours.The overall load resistance is the result of the sum of the various resistive zones subjected to the thermal gradient of the ovens.
La mesure globale de la résistance selon la procédure décrite ne permet pas d'obtenir une sensibilité suffisante pour pouvoir juger de la structure formée.The overall measurement of the resistance according to the procedure described does not make it possible to obtain sufficient sensitivity to be able to judge the structure formed.
Exposé de l'inventionStatement of the invention
Afin d'accroître la sensibilité de la mesure l'invention propose de réaliser une mesure différentielle de résistance entre deux parties de l'échantillon, par exemple entre deux moitiés de 1 'échantillon.In order to increase the sensitivity of the measurement, the invention proposes to carry out a differential resistance measurement between two parts of the sample, for example between two halves of the sample.
A cette fin, l'invention a pour objet un dispositif de solidification d'un matériau conducteur de l'électricité, caractérisé en ce qu'il comporte des moyens de mesure différentielle de résistance d'une charge de matériau conducteur, entre un premier point situé dans une portion solide de la charge et un second point situé dans une portion liquide, et entre un troisième point situé dans une autre portion solide de la charge et le second point.To this end, the subject of the invention is a device for solidifying an electrically conductive material, characterized in that it comprises means for differential measurement of resistance of a charge of conductive material, between a first point located in a solid portion of the charge and a second point located in a liquid portion, and between a third point located in another solid portion of the charge and the second point.
Un tel dispositif permet d'extraire la variation de la résistance, indépendamment de la valeur absolue de la résistance de charge. Or, cette dernière est bien supérieure aux variations elles-mêmes. Le dispositif selon l'invention améliore donc la précision à l'égard de variations qui peuvent être faibles.Such a device makes it possible to extract the variation of the resistance, independently of the absolute value of the load resistance. However, the latter is much greater than the variations themselves. The device according to the invention therefore improves the accuracy with regard to variations which may be small.
Selon un mode de réalisation, les moyens de mesure différentielle comportent des moyens pour mesurer une première tension Vi, entre les premier et second points, et une deuxième tension V2, entre les second et troisième points.According to one embodiment, the differential measurement means include means for measuring a first voltage Vi, between the first and second points, and a second voltage V 2 , between the second and third points.
La première tension est par exemple mesurée entre une première électrode, appliquée au premier point et une deuxième électrode, dite électrode de récupération et appliquée au deuxième point. La deuxième tension est alors prélevée entre l'électrode de récupération et une troisième électrode appliquée au troisième point.The first voltage is for example measured between a first electrode, applied to the first point and a second electrode, called recovery electrode and applied to the second point. The second voltage is then taken between the recovery electrode and a third electrode applied to the third point.
Les moyens de mesure de la tension comportent par exemple un transformateur différentiel.The voltage measurement means comprise for example a differential transformer.
Dans une configuration symétrique, le second point est situé à mi-chemin entre les deux extrémités de la partie liquide de la charge.In a symmetrical configuration, the second point is located halfway between the two ends of the liquid part of the charge.
Pour une configuration non symétrique, le transformateur différentiel a un premier et un second bobinages primaires ayant respectivement un nombre de spires ki, k2, les tension Vτ et V2 étant, pour une résistance différentielle nulle, telles que k1V1-k2V2=0.For a non-symmetrical configuration, the differential transformer has first and second primary windings having respectively a number of turns ki, k 2 , the voltages V τ and V 2 being, for a zero differential resistance, such that k 1 V 1 - k 2 V 2 = 0.
Selon un autre mode de réalisation, le dispositif comporte en outre un potentiomètre disposé en série entre un premier et un second bobinages primaires du transformateur et relié électriquement au second point de mesure de la tension.According to another embodiment, the device further comprises a potentiometer arranged in series between a first and a second primary winding of the transformer and electrically connected to the second voltage measurement point.
Enfin, on peut prévoir des moyens de mesure de la résistance totale de la charge.Finally, it is possible to provide means for measuring the total resistance of the load.
En mesurant simultanément la résistance totale et la résistance différentielle, on peut connaître l'interface (la résistance variable ou la résistance fixe servant de référence) qui cause une variation. Brève description des figuresBy simultaneously measuring the total resistance and the differential resistance, one can know the interface (the variable resistance or the fixed resistance serving as a reference) which causes a variation. Brief description of the figures
De toute façon, les caractéristiques et avantages de l'invention apparaîtront mieux à la lumière de la description qui va suivre. Cette description porte sur les exemples de réalisation, donnés à titre explicatif et non limitatif, en se référant à des dessins annexés sur lesquels :In any case, the characteristics and advantages of the invention will appear better in the light of the description which follows. This description relates to the exemplary embodiments, given by way of explanation and without limitation, with reference to the appended drawings in which:
- La figure 1 représente un dispositif connu de l'art antérieur, - La figure 2 représente un schéma de mesure de résistance différentielle, conformément à l'invention.- Figure 1 shows a device known from the prior art, - Figure 2 shows a differential resistance measurement diagram, according to the invention.
La figure 3 représente un autre mode de réalisation de l'invention.Figure 3 shows another embodiment of the invention.
- La figure 4 représente un montage électrique d'un dispositif selon l'invention.- Figure 4 shows an electrical assembly of a device according to the invention.
- La figure 5 illustre un exemple de charge pour une mesure selon l'invention.- Figure 5 illustrates an example of load for a measurement according to the invention.
- Les figures 6 et 7 représentent l'évolution de la sensibilité en fonction de la valeur de la résistance de la charge.- Figures 6 and 7 show the change in sensitivity as a function of the value of the resistance of the load.
Exposé détaillé de modes de réalisation de l'inventionDetailed description of embodiments of the invention
Un mode de réalisation de l'invention est représenté sur la figure 2. Sur cette figure, une charge comporte, à l'intérieur d'un creuset 23, une partie liquide 20 et deux parties latérales solides 22, 24. Une source 16 permet d'alimenter en courant alternatif un circuit fermé par la charge 20, 22, 24. Trois électrodes 26, 28, 30 permettent de prélever deux tensions Vi et V2. L'une d'elle, dite électrode 30 de récupération est introduite dans la partie liquide de la charge. Les deux autres sont en contact avec la partie solide de la charge. Cette disposition sépare en deux parties la résistance globale de la charge. Le prélèvement Vj. est, par exemple, le reflet de la partie de la résistance qui évolue avec le déplacement du four, le prélèvement V2 étant alors le reflet de la partie de la résistance fixe, cette dernière servant de référence. L'utilisation d'un transformateur différentiel 32 permet de récupérer la tension Vs, qui a pour expression :An embodiment of the invention is shown in Figure 2. In this figure, a charge comprises, inside a crucible 23, a liquid part 20 and two solid side parts 22, 24. A source 16 allows supplying alternating current to a circuit closed by the load 20, 22, 24. Three electrodes 26, 28, 30 make it possible to take two voltages Vi and V 2 . One of them, called recovery electrode 30, is introduced into the liquid part of the load. The other two are in contact with the solid part of the load. This arrangement separates the overall resistance of the load into two parts. The Vj. is, for example, the reflection of the part of the resistance which evolves with the movement of the furnace, the sample V 2 then being the reflection of the part of the fixed resistance, the latter serving as a reference. The use of a differential transformer 32 makes it possible to recover the voltage V s , which has the expression:
Vs=K(Vι-V2) où K est un coefficient dépendant du transformateur utilisé.V s = K (Vι-V 2 ) where K is a coefficient depending on the transformer used.
Un tel dispositif permet d'extraire la variation de la résistance seule, et élimine de ce fait la valeur absolue de la résistance de la charge. Cette dernière étant bien supérieure aux variations elles- mêmes, une mesure directe limite fortement la précision sur les variations. Par exemple si R(charge) a pour valeur 20 mΩ, une mesure à 10~4 permet d'obtenir la vraie valeur à 2 μΩ près. Si les variations dues au déplacement du four mobile avoisinent 1 mΩ, on obtient une précision réelle de 2.10"3 pour cette variation. Par contre, si seule la variation de 1 mΩ peut être prise en compte, alors on retrouve la précision de 10"4 et on obtient la valeur de la variation de 1 mΩ à 0,1 μΩ près .Such a device makes it possible to extract the variation of the resistance alone, and thereby eliminates the absolute value of the resistance of the load. Since the latter is much greater than the variations themselves, direct measurement greatly limits the accuracy of the variations. For example if R (load) has the value 20 mΩ, a measurement to 10 ~ 4 makes it possible to obtain the true value to within 2 μΩ. If the variations due to the movement of the mobile oven are around 1 mΩ, we obtain a real precision of 2.10 "3 for this variation. On the other hand, if only the variation of 1 mΩ can be taken into account, then we find the precision of 10 " 4 and the value of the variation from 1 mΩ to 0.1 μΩ is obtained.
Cet exemple illustre l'intérêt d'un tel dispositif, qui améliore la précision à l'égard de variations qui peuvent être très faibles.This example illustrates the advantage of such a device, which improves the precision with regard to variations which may be very small.
Les moyens de mesure de la tension Vs peuvent être reliés à des moyens 33 de calcul de la résistance différentielle qui sont eux-mêmes reliés à des moyens 35 d'affichage et/ou de mémorisation.The means for measuring the voltage V s can be connected to means 33 for calculating the resistance which are themselves connected to display and / or storage means.
En particulier, ces moyens peuvent permettre la transmission des données relatives à la résistance différentielle à un micro-ordinateur 37, par exemple pour le pilotage ou la commande du dispositif de solidification.In particular, these means can allow the transmission of data relating to the differential resistance to a microcomputer 37, for example for piloting or controlling the solidification device.
La configuration décrite ci-dessus convient pour des charges parfaitement symétriques. Cela n'est pas toujours le cas. En effet, dans certains cas, le tube de remplissage du creuset est le seul lieu possible pour installer l'électrode de prélèvement. Or, ce tube peut être décentré, pour permettre au four mobile un déplacement maximum (par exemple de l'ordre de 120 mm) .The configuration described above is suitable for perfectly symmetrical loads. This is not always the case. Indeed, in some cases, the crucible filling tube is the only possible place to install the sampling electrode. However, this tube can be off-center, to allow the mobile oven a maximum displacement (for example of the order of 120 mm).
Pour pallier à cette dissymétrie, obtenir un dispositif qui soit compatible avec le principe décrit, et réussir à atteindre l'objectif de démarrer un cycle, avec une valeur de résistance nulle, on peut par exemple fixer des coefficients multiplicatifs différents pour chacune des tensions Vj. et V2 ; ainsi, on peut adapter les enroulements 27, 29 sur le transformateur pour obtenir :To overcome this asymmetry, obtain a device which is compatible with the principle described, and succeed in achieving the objective of starting a cycle, with a zero resistance value, it is for example possible to set different multiplicative coefficients for each of the voltages Vj . and V 2 ; thus, the windings 27, 29 on the transformer can be adapted to obtain:
(k1V1-k2V2)=0 où ki et k2 sont proportionnels au rapport du nombre de spires secondaire/primaire (ki (respectivement k2) est égal au rapport du nombre de spires de l'enroulement secondaire/nombre de spires de la bobine primaire 27 (respectivement 29) ) . Cette solution présente des difficultés de réalisation du fait qu'un rapport entier du nombre de spires est plus aisé à réaliser. De plus, un transformateur spécifique est à adapter pour chacune des charges réalisées, sachant que toutes n'ont pas la même taille.(k 1 V 1 -k 2 V 2 ) = 0 where ki and k 2 are proportional to the ratio of the number of secondary / primary turns (ki (respectively k 2 ) is equal to the ratio of the number of turns of the secondary winding / number of turns of the primary coil 27 (respectively 29)). This solution presents difficulties in achieving the fact that an entire ratio of the number of turns is easier to achieve. In addition, a specific transformer is to be adapted for each loads carried out, knowing that not all of them are the same size.
La solution pratique, illustrée sur la figure 3, est d'adjoindre un potentiomètre 34 en série avec les deux enroulements 36, 38 du primaire du transformateur et de relier son curseur 40 à l'électrode de récupération 30. Avec cette configuration on obtient, dans l'hypothèse d'un transformateur idéal et sous la condition jωL»(rι+r2), où r: et r2 représentent les deux parties de la résistance en potentiomètre, de part et d'autre du curseur,The practical solution, illustrated in FIG. 3, is to add a potentiometer 34 in series with the two windings 36, 38 of the transformer primary and to connect its cursor 40 to the recovery electrode 30. With this configuration, in the hypothesis of an ideal transformer and under the condition jωL "(rι + r 2 ), where r : and r 2 represent the two parts of the resistance as a potentiometer, on either side of the cursor,
avec : Ns = nombre de spires au secondaire. with: N s = number of turns in secondary school.
N = nombre de spires au primaire, sachant que Lι=L2=kN2=LN = number of turns in the primary, knowing that Lι = L 2 = kN 2 = L
Vi = RiXlVi = RiXl
V2 = R2xl. Le potentiomètre 34 rattrape les écarts de potentiel entre Vi et V2 dus au décentrage mécanique du point 40.V 2 = R 2 xl. The potentiometer 34 catches the potential differences between Vi and V 2 due to the mechanical off-center of point 40.
Cette relation (1) est établie de la manière suivante, en considérant le schéma et les notations de la figure 4. Soient M l'inductance mutuelle des bobinesThis relation (1) is established in the following way, by considering the diagram and the notations of figure 4. Let M be the mutual inductance of the coils
36, 38, Mi et M2 les inductances mutuelles, de la bobine du secondaire (d'inductance Ls) et, respectivement, de la bobine primaire 36 (d'inductance Lx) et de la bobine primaire 38 (d'inductance L2) . Si l'on pose les conditions ls=0, Lι=L2=L, on peut alors écrire : eι=-jωMxI2 et e2=-jωMxIι De plus :36, 38, Mi and M 2 the mutual inductances, of the secondary coil (of inductance L s ) and, respectively, of the primary coil 36 (of inductance L x ) and of the primary coil 38 (of inductance L 2 ). If we set the conditions ls = 0, Lι = L 2 = L, we can then write: eι = -jωMxI 2 and e 2 = -jωMxIι In addition:
(Vi - jωMxI2) (~V2 - jωMxIi)(Vi - jωMxI 2 ) (~ V 2 - jωMxIi)
Il = r et I2 = rIl = r and I 2 = r
(ιωL + ri) (;jωL + r2)(ιωL + ri) (; jωL + r 2 )
Ou encore :Or :
et -V2(jωL + ∑ι) - jωMxV} and -V 2 (jωL + ∑ι) - jωMxV }
12 =12 =
(jωL + r )(jωL + r2) + ω 2 'M„2(jωL + r) (jωL + r 2 ) + ω 2 ' M „2
Sachant de =kL et sous l'hypothèse K≡l (transformateur idéal), il vient :Knowing of = kL and under the assumption K≡l (ideal transformer), it comes:
Vι(jωL + r2) + jωLxV2 II = T -; r JCÛL + rι jωL + r2) + ω2L2 et :Vι (jωL + r 2 ) + jωLxV 2 II = T -; r JCÛL + rι jωL + r 2 ) + ω 2 L 2 and:
Comme Is=0, et que l'on impose, par construction des inductances mutuelles Mi et M2 égales ou semblables, la tension Vs est égale à :As I s = 0, and that we impose, by construction of mutual inductances Mi and M 2 equal or similar, the voltage V s is equal to:
Vs=±jωMsx (Iι+I2) avec Ms=Mι=M2 V s = ± jωM s x (Iι + I 2 ) with M s = Mι = M 2
V"ι(jωL + r ) + jωLxV2 - V2(jωL + r ) - jωLxV VS = ±jωMsx —V " ι (jωL + r) + jωLxV 2 - V 2 (jωL + r) - jωLxV V S = ± jωM s x -
(jωL + η ωL + r2) + ω L Enfin, sachant que jωL»(rι+r2) :(jωL + η ωL + r 2 ) + ω L Finally, knowing that jωL ”(rι + r 2 ):
On obtient donc avec :So we get with:
Ns = nombre de spires au secondaire,N s = number of turns in secondary school,
N = nombre de spires au primaire (nombre de spires de Ni et de N2, avec la condition Nι=N2=N, car Lι=L2=L) , I = courant d'excitation de la charge, Ri = résistance variable à mesurer, R2 = résistance fixe servant de référence. On peut donc facilement ajuster les coefficients multiplicateurs pour Vi et V2. Ceux-ci vont dépendre du rapport (rι/r ) .N = number of turns in the primary (number of turns of Ni and N 2 , with the condition Nι = N 2 = N, because Lι = L 2 = L), I = excitation current of the load, Ri = resistance variable to be measured, R 2 = fixed resistance serving as a reference. We can therefore easily adjust the multiplying coefficients for Vi and V 2 . These will depend on the ratio (rι / r).
Cette solution permet d'annuler Vs, quelle que soit la dissymétrie de la charge et, de ce fait, autorise à obtenir la sensibilité maximum pour tous les déplacements .This solution makes it possible to cancel V s , whatever the asymmetry of the load and, therefore, allows to obtain the maximum sensitivity for all displacements.
Une fois l'équilibrage réalisé (Vs=0) , il y a insensibilité aux variations du courant I, et l'évolution de la température ambiante est alors également totalement compensée.Once balancing has been carried out (V s = 0), there is insensitivity to variations in current I, and the change in ambient temperature is then also fully compensated.
En mesurant simultanément la résistance totale et la résistance différentielle, on peut connaître l'interface cause de la variation. Une variation positive de la résistance totale aura le même signe sur la mesure différentielle si R: est la source de la variation, et aura un signe contraire si c'est R2 qui est cause de la variation.By simultaneously measuring the total resistance and the differential resistance, one can know the interface causing the variation. A positive variation of the total resistance will have the same sign on the differential measurement if R : is the source of the variation, and will have a contrary sign if it is R 2 which is the cause of the variation.
Par contre, la sensibilité est fonction du réglage. Mais, comme l'exemple numérique suivant va le montrer, le réglage est peu influant.On the other hand, the sensitivity depends on the setting. But, as the following numerical example will show, the setting has little influence.
EXEMPLE On considère la géométrie illustrée sur la figure 5. La charge a une longueur totale 1=960 mm et deux longueurs partielles (de part et d'autre du tube de remplissage et, donc, de l'électrode de prélèvement) 11=508 mm et 12=380 mm. On considère une charge eutectique SnCu 0,94 at%Cu.EXAMPLE We consider the geometry illustrated in Figure 5. The load has a total length 1 = 960 mm and two partial lengths (on either side of the filling tube and, therefore, of the sampling electrode) 1 1 = 508 mm and 1 2 = 380 mm. Consider a eutectic charge SnCu 0.94 at% Cu.
La résistance de la charge à température ambiante avant la montée en température est deThe resistance of the load at room temperature before the temperature rise is
11,47 mΩ. Cette valeur correspond aux longueurs de 508 mm (côté mobile) et 380 mm (côté fixe) qui s'avèrent être des longueurs utilisées pour la mesure de la résistance. La longueur de 508 mm correspond à Ri, la longueur de 380 mm correspond à R2.11.47 mΩ. This value corresponds to the lengths of 508 mm (mobile side) and 380 mm (fixed side) which turn out to be lengths used for resistance measurement. The length of 508 mm corresponds to Ri, the length of 380 mm corresponds to R 2 .
^11,47x508^1 ^ ^ Λ ^ 11.47x508 ^ 1 ^ ^ Λ
R, = = 6,56mΩ ( cote mobileR , = = 6.56mΩ (moving dimension
V 888 ^V 888 ^
( 1,47x380^ R = — = 4,91mΩ ( côté fixe )(1.47x380 ^ R = - = 4.91mΩ (fixed side)
V 888 JV 888 J
Ces valeurs sont celles de la charge à température ambiante, avant la montée en température.These values are those of the charge at ambient temperature, before the temperature rise.
A 600°C, le four étant rentré (cote 0) , la résistance totale de la charge atteint 21,6 mΩ après avoir effectué la fusion F0 et la solidification Si. Le four amené à la cote 120 mm, la résistance atteint la valeur de 24,96 mΩ.At 600 ° C, the oven having returned (dimension 0), the total resistance of the load reaches 21.6 mΩ after having carried out the melting F 0 and the solidification Si. The oven brought to dimension 120 mm, the resistance reaches the 24.96 mΩ value.
La zone fondue, four rentré (cote 0) , est de : 131x2=262 mm (d'interface à interface). Par rapport à l'ambiante cette zone fondue augmente Rι+R2 de environ 10 mΩ (compensation de volume incluse) .The melted area, oven returned (dimension 0), is: 131x2 = 262 mm (from interface to interface). Compared to the ambient, this molten zone increases R ι + R 2 by approximately 10 mΩ (volume compensation included).
Les longueurs des zones solides intéressant la mesure ont alors pour valeurs : - 380-131=249 mm (côté fixe) , - 508-131=377 mm (côté mobile) .The lengths of the solid areas of interest for the measurement then have the following values: - 380-131 = 249 mm (fixed side), - 508-131 = 377 mm (mobile side).
Les zones de gradient sont les mêmes, côté fixe et côté mobile. La longueur solide supplémentaire (côté mobile) est une longueur très voisine de celle à la température ambiante, car elle est située après le puits froid. Si l'on néglige, dans un premier temps, la légère augmentation de section dans la zone des 120 mm, on peut estimer l'écart maximum possible entre Ri et R2. (L'augmentation de section réduit l'écart). La différence de longueur des zones est : 377-The gradient zones are the same, fixed side and mobile side. The additional solid length (mobile side) is very close to that at room temperature, since it is located after the cold well. If we neglect, at first, the slight increase in cross-section in the 120 mm zone, we can estimate the maximum possible difference between Ri and R 2 . (The increase in section reduces the gap). The difference in length of the zones is: 377-
249=128 mm.249 = 128 mm.
La résistance d'un morceau de 128 mm de charge à la température ambiante est :The resistance of a piece of 128 mm load at room temperature is:
11,47x127 , _ _ , . = l,65mΩ ( écart du départ ) .11.47x127, _ _,. = 1.65mΩ (departure difference).
888 Les valeurs de la résistance four rentré (cote888 The values of the retracted oven resistance (dimension
0) pour R2 et Ri sont :0) for R 2 and Ri are:
2 6 ~ X65 = 9,975mΩ = R2 2 6 ~ X65 = 9.975mΩ = R 2
R2 + 21,65 = ll,625mΩ n = RiR 2 + 21.65 = ll, 625mΩ n = Ri
Le four mobile étant rentré à la cote 0, l'écart de résistance entre les deux moitiés est relativement plus faible lorsque les fours sont montés en température que lorsque la température est la température ambiante.The mobile oven having returned to dimension 0, the resistance difference between the two halves is relatively smaller when the ovens are raised in temperature than when the temperature is room temperature.
La compensation pour annuler la tension Vs donne, pour valeur de ri et r2 :The compensation for canceling the voltage V s gives, for the value of ri and r 2 :
Comme Vι=IRι et V2=IR2 , alors :As Vι = IRι and V 2 = IR 2 , then:
En prenant par exemple (rι+r2)=lΩ (condition (jωL>> (rι+r2) vérifiée), on obtient : rι=0,5382Ω (coefficient multiplicateur pour R2) , r2=0,4618Ω (coefficient multiplicateur pour Ri). Ces valeurs de rx et r2 représentent les coefficients multiplicateurs pour chaque côté. La variation de tension pour un "delta" de résistance donné ne sera pas équivalent selon le coté concerné. Par exemple, pour une variation de ΔR=lmΩ côté mobile, la tension correspondante ΔV est : By taking for example (rι + r 2 ) = lΩ (condition (jωL >> (rι + r 2 ) verified), we obtain: r ι = 0.5382Ω (multiplying coefficient for R 2 ), r 2 = 0.4618Ω (multiplier coefficient for Ri) These values of r x and r 2 represent the multiplier coefficients for each side. The voltage variation for a given resistance "delta" will not be equivalent depending on the side concerned. For example, for a variation of ΔR = lmΩ on the mobile side, the corresponding voltage ΔV is:
Nς ΔRxIx —≥- x0,4618 = 166μV = ΔV / ΔR = 166μV / mΩ N et ΔR / ΔV ≈ (6μΩ / μv) avec :Nς ΔRxIx —≥- x0.4618 = 166μV = ΔV / ΔR = 166μV / mΩ N and ΔR / ΔV ≈ (6μΩ / μv) with:
I = 30 niA, Ns/N = 12.I = 30 niA, N s / N = 12.
Pour le coté fixe, il vient :For the fixed side, it comes:
N ΔRxIx — χ0,5382 + 193μV ΔV / ΔR = 193μV / mΩ N et Δr / Δv ≈ (5,2μΩ / μv)N ΔRxIx - χ0.5382 + 193μV ΔV / ΔR = 193μV / mΩ N and Δr / Δv ≈ (5.2μΩ / μv)
Lorsque le four mobile se déplace (120 mm au maximum), RI est cause de toute la variation. Dans l'exemple présent, la variation est de 3,36mΩ.When the mobile oven is moving (120 mm maximum), RI is the cause of all the variation. In the present example, the variation is 3.36mΩ.
Cette valeur est à comparer à la valeur absolue de R qui est 7 fois plus grande. On peut donc gagner un facteur 7 en sensibilité sur toute la variation de R si on opte pour une mesure différentielle au lieu d'une mesure absolue. Pour de petits déplacements du four, en reprenant les réglages du potentiomètre on peut obtenir une sensibilité maximum quel que soit le lieu de la variation. La sensibilité peut être ainsi améliorée d'un facteur très important par rapport à une mesure absolue de la résistance.This value is to be compared with the absolute value of R which is 7 times greater. We can therefore gain a factor of 7 in sensitivity over the entire variation of R if we opt for a differential measurement instead of an absolute measurement. For small movements of the oven, using the potentiometer settings you can obtain a maximum sensitivity whatever the place of the variation. Sensitivity can be improved a very important factor compared to an absolute measure of resistance.
Mais la sensibilité est fonction du réglage, et on peut recalculer la nouvelle position du potentiomètre d'équilibrage pour compenser la variation maximum, soit :However, the sensitivity depends on the setting, and the new position of the balancing potentiometer can be recalculated to compensate for the maximum variation, namely:
- R2 reste fixe et vaut 9,975mΩ,- R 2 remains fixed and is worth 9.975mΩ,
- Ri passe de ll,625mΩ à 14,985mΩ.- Ri goes from ll, 625mΩ to 14.985mΩ.
Pour équilibrer, il faut :To balance, you need:
Valeur de r2 R 2 value
9,9759.975
0,3996Ω0.3996Ω
14,985 + 9,97514.985 + 9.975
Valeur de rx R x value
14985 = C600 Ω 14985 = C600 Ω
14,985 + 9,975 La sensibilité correspondante pour chacune des interfaces sera alors de :14.985 + 9.975 The corresponding sensitivity for each of the interfaces will then be:
NςNo.
ΔRxIx —≥- x0,3996 = 144μV = ΔV / ΔR = 144μV / mΩ N et ΔR / ΔV ≈ (6,94μΩ / μv) (interface mobile)ΔRxIx —≥- x0.3996 = 144μV = ΔV / ΔR = 144μV / mΩ N and ΔR / ΔV ≈ (6.94μΩ / μv) (mobile interface)
NeBorn
ΔRxIx — χ0,6004 = 2166μV => ΔV / ΔR = 2166μV / mΩ N et ΔR / ΔV ≈ (4,62μΩ / μv) (interface fixe)ΔRxIx - χ0.6004 = 2166μV => ΔV / ΔR = 2166μV / mΩ N and ΔR / ΔV ≈ (4.62μΩ / μv) (fixed interface)
A équilibrage refait, la sensibilité concernant les deux interfaces (Sm et Sf) va évoluer dans la fourchette : 144μV / mΩ < Sm < 166μV / mΩ, ou 7μΩ / μV < Sm < 6μΩ / μVWith balancing redone, the sensitivity concerning the two interfaces (S m and S f ) will evolve in the range: 144μV / mΩ <Sm <166μV / mΩ, or 7μΩ / μV <Sm <6μΩ / μV
216μV / mΩ > Sf > 193μV / mΩ, ou 4,6μV / μV > Sf > 5,2μΩ / μV On peut également tracer l'évolution théorique de la sensibilité S (en μV/mΩ) pour les deux interfaces selon la valeur de la résistance R de la charge (en Ω) , et recaler la position du four mobile en conséquence. Cette évolution est représentée sur la figure 6, où la courbe I correspond à S mobile et la courbe II à S fixe.216μV / mΩ>Sf> 193μV / mΩ, or 4.6μV / μV>Sf> 5.2μΩ / μV We can also trace the theoretical evolution of the sensitivity S (in μV / mΩ) for the two interfaces according to the value of the resistance R of the load (in Ω), and readjust the position of the mobile oven accordingly. This development is shown in Figure 6, where curve I corresponds to S mobile and curve II to S fixed.
A une plage DE déplacement D du four mobile (120 mm) correspond la plage de variation de la résistance repérée par ΔRD sur la figure 6. La figure 7 est une représentation agrandie des courbes I et II sur cette plage.A range D of displacement D of the mobile oven (120 mm) corresponds to the range of variation of the resistance indicated by ΔR D in FIG. 6. FIG. 7 is an enlarged representation of the curves I and II over this range.
Les flèches A, B, C représentent les réglages aux cotes 0 mm, 60 mm et 120 mm. Les valeurs Si et S2 sont les sensibilités obtenues pour un équilibrage réalisé à la cote 0 mm, les valeurs S3 et S sont les sensibilités obtenues pour un équilibrage réalisé à la cote 120 mm.The arrows A, B, C represent the settings at dimensions 0 mm, 60 mm and 120 mm. The values Si and S 2 are the sensitivities obtained for a balancing performed at the 0 mm dimension, the values S 3 and S are the sensitivities obtained for a balancing performed at the 120 mm dimension.
Si l'équilibrage est réalisé entre les deux cotes (0 mm et 120 mm) , les sensibilités respectives de Sm et Sf vont évoluer selon les courbes (Sfixe, Smobiie) , la cote variant de façon totalement linéaire. Par exemple, les sensibilités obtenues à la cote 60 mm seront celles que l'on trouve situées entre la cote 0 mm et la cote 120 mm.If balancing is carried out between the two dimensions (0 mm and 120 mm), the respective sensitivities of S m and S f will change according to the curves (S fixed , S mob iie), the dimension varying in a completely linear fashion. For example, the sensitivities obtained at the 60 mm dimension will be those found between the 0 mm dimension and the 120 mm dimension.
Une solution intéressante est de réaliser le réglage de la cote 60 mm. Cela permet d'obtenir la variation de Ri en ±l,68mΩ. L'échelle de mesure choisie pour le voltmètre ou la détection synchrone qui traite Vs peut correspondre à l'équivalent de ±2mW. Cette échelle est beaucoup plus intéressante que l'échelle nécessaire à la valeur absolue totale de la charge qui sera pratiquement équivalente à 50 mΩ, car les calibres sur les voltmètres ou les détections synchrones sont ainsi faits. La précision ainsi obtenue pour toute la variation de Ri est directement améliorée d'un facteur supérieur à 10 par rapport à la mesure directe et absolue de la charge. Le réglage peut n'être fait qu'une seule fois en début de mesure, et il n'a normalement pas besoin d'être retouché. Les sensibilités à prendre en compte pour les deux interfaces sont celles obtenues pour le réglage de la cote 60, soit 155μV/mΩ (ou 6,45μΩ/μV) pour l'interface mobile.An interesting solution is to adjust the dimension 60 mm. This provides the variation of Ri in ± l, 68mΩ. The measurement scale chosen for the voltmeter or synchronous detection which processes V s can correspond to the equivalent of ± 2mW. This scale is much more interesting than the scale necessary for the total absolute value of the load which will be practically equivalent to 50 mΩ, because the calibers on the voltmeters or the synchronous detections are thus made. The precision thus obtained for all the variation of Ri is directly improved by a factor greater than 10 compared to the direct and absolute measurement of the load. The adjustment can only be made once at the start of the measurement, and it does not normally need to be touched up. The sensitivities to be taken into account for the two interfaces are those obtained for setting the dimension 60, i.e. 155μV / mΩ (or 6.45μΩ / μV) for the mobile interface.
Pour augmenter encore la sensibilité il suffit d'effectuer des déplacements réduits du four mobile et de retoucher les réglages du potentiomètre pour chaque cote de départ. Le choix d'une échelle adaptée à la variation prévue permet d'obtenir la plus grande précision possible. La limite de précision est imposée par le bruit électronique de l'amplification, et non pas par le calibre de l'appareil de mesure comme cela est le cas aujourd'hui. To further increase the sensitivity, just make reduced movements of the mobile oven and touch up the potentiometer settings for each starting dimension. The choice of a scale adapted to the expected variation makes it possible to obtain the greatest possible precision. The limit of precision is imposed by the electronic noise of the amplification, and not by the caliber of the measuring device as it is the case today.
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98962471A EP1042543A1 (en) | 1997-12-17 | 1998-12-15 | Device for measuring and controlling the solidification of an electrically conductive material |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR97/16014 | 1997-12-17 | ||
| FR9716014A FR2772394B1 (en) | 1997-12-17 | 1997-12-17 | DEVICE FOR MEASURING THE SOLIDIFICATION OF AN ELECTRICALLY CONDUCTIVE MATERIAL, DOPING, AND CONTINUOUSLY CONTROLLING ITS DOPING CONTENT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1999031305A1 true WO1999031305A1 (en) | 1999-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FR1998/002734 Ceased WO1999031305A1 (en) | 1997-12-17 | 1998-12-15 | Device for measuring and controlling the solidification of an electrically conductive material |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1042543A1 (en) |
| FR (1) | FR2772394B1 (en) |
| WO (1) | WO1999031305A1 (en) |
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| FR2811082A1 (en) * | 2000-06-28 | 2002-01-04 | Commissariat Energie Atomique | DEVICE AND METHOD FOR DETERMINING AT LEAST ONE CHARACTERISTIC OF AN INTERFACE BETWEEN TWO PHASES OF AN ELECTRICALLY CONDUCTIVE MATERIAL |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4595427A (en) * | 1984-10-22 | 1986-06-17 | The Royal Institution For The Advancement Of Learning (Mcgill University) | Annealing process control method and apparatus |
| FR2597884A1 (en) * | 1986-04-28 | 1987-10-30 | Commissariat Energie Atomique | METHOD AND APPARATUS FOR CONTINUOUS MONITORING OF SURFUSION OF SOLIDIFYING FRONT OF MONOCRYSTAL DURING PRODUCTION AND APPLICATION TO CONTROL THE GROWTH OF A CRITAL |
| EP0549449A1 (en) * | 1991-12-23 | 1993-06-30 | Commissariat A L'energie Atomique | Apparatus for solidifying a doped electrically conducting material and for continuously monitoring its dopant concentration |
-
1997
- 1997-12-17 FR FR9716014A patent/FR2772394B1/en not_active Expired - Fee Related
-
1998
- 1998-12-15 EP EP98962471A patent/EP1042543A1/en not_active Withdrawn
- 1998-12-15 WO PCT/FR1998/002734 patent/WO1999031305A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4595427A (en) * | 1984-10-22 | 1986-06-17 | The Royal Institution For The Advancement Of Learning (Mcgill University) | Annealing process control method and apparatus |
| FR2597884A1 (en) * | 1986-04-28 | 1987-10-30 | Commissariat Energie Atomique | METHOD AND APPARATUS FOR CONTINUOUS MONITORING OF SURFUSION OF SOLIDIFYING FRONT OF MONOCRYSTAL DURING PRODUCTION AND APPLICATION TO CONTROL THE GROWTH OF A CRITAL |
| EP0246940A1 (en) * | 1986-04-28 | 1987-11-25 | Commissariat A L'energie Atomique | Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control |
| EP0549449A1 (en) * | 1991-12-23 | 1993-06-30 | Commissariat A L'energie Atomique | Apparatus for solidifying a doped electrically conducting material and for continuously monitoring its dopant concentration |
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| WADLEY ET AL: "Methods for liquid-solid interface shape and location discrimination during eddy current sensing of Bridgman Growth", JOURNAL OF CRYSTAL GROWTH., vol. 172, 3 January 1997 (1997-01-03), AMSTERDAM NL, pages 313 - 322, XP004060786 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2772394B1 (en) | 2000-01-14 |
| EP1042543A1 (en) | 2000-10-11 |
| FR2772394A1 (en) | 1999-06-18 |
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