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WO1999008352A1 - Laser a injection - Google Patents

Laser a injection Download PDF

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Publication number
WO1999008352A1
WO1999008352A1 PCT/RU1998/000258 RU9800258W WO9908352A1 WO 1999008352 A1 WO1999008352 A1 WO 1999008352A1 RU 9800258 W RU9800258 W RU 9800258W WO 9908352 A1 WO9908352 A1 WO 9908352A1
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WO
WIPO (PCT)
Prior art keywords
output
radiation
laser
region
optical
Prior art date
Application number
PCT/RU1998/000258
Other languages
English (en)
Russian (ru)
Inventor
Vasily Ivanovich Shveikin
Alexandr Ivanovich Bogatov
Alexandr Evgenievich Drakin
Jury Vladimirovich Kurnyavko
Original Assignee
Simakov, Vladimir Alexandrovich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simakov, Vladimir Alexandrovich filed Critical Simakov, Vladimir Alexandrovich
Priority to AU90114/98A priority Critical patent/AU9011498A/en
Publication of WO1999008352A1 publication Critical patent/WO1999008352A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1089—Unstable resonators

Definitions

  • the present invention is not related to the Quantum Electrical, but rather to the highest and the highest accidental emissions.
  • S ⁇ zdanie ⁇ lu ⁇ v ⁇ dni ⁇ vy ⁇ is ⁇ chni ⁇ v radiation vys ⁇ y m ⁇ schn ⁇ s ⁇ i, s ⁇ anyayuschi ⁇ di ⁇ a ⁇ tsi ⁇ nnuyu ⁇ as ⁇ dim ⁇ s ⁇ ⁇ i increase ⁇ azme ⁇ v eg ⁇ emitting ⁇ ve ⁇ n ⁇ s ⁇ i and, sled ⁇ va ⁇ eln ⁇ and vy ⁇ dn ⁇ y m ⁇ schn ⁇ s ⁇ i radiation yavlyae ⁇ sya ⁇ dn ⁇ y of vazhneyshi ⁇ tasks laze ⁇ n ⁇ y ⁇ e ⁇ ni ⁇ i.
  • injection lasers - amplifiers including the type of master laser power amplifier ( ⁇ ) ( ⁇ ⁇ . ⁇ " ⁇ ia ⁇ it ⁇ es ⁇ g ⁇ sz (1993), ⁇ .29, ⁇ .6, ⁇ .2052-2057) , ⁇ lu ⁇ v ⁇ dni ⁇ vye laze ⁇ nye di ⁇ dy with iz ⁇ gnu ⁇ ymi ⁇ ez ⁇ na ⁇ ami and vyv ⁇ d ⁇ m radiation che ⁇ ez ⁇ ve ⁇ n ⁇ s ⁇ ( ⁇ es ⁇ g ⁇ s ⁇ ⁇ _eyeg ⁇ (1992), ⁇ .28, ⁇ .21 ., ⁇ .3011-3012) to e ⁇ i ⁇ laze ⁇ v in ⁇ m including ⁇ a ⁇ a ⁇ e ⁇ ny vys ⁇ aya radiation as ⁇ igma ⁇ ichn ⁇ s ⁇ , ⁇ busl ⁇ vlennaya ⁇ g ⁇ anichennym ⁇ azme ⁇ m ⁇ ela luminescence in
  • Immediate output of radiation with an output that is impaired, at the very least, with the same active state includes one of the oblique layers and the access to it, especially in the case of free shipping.
  • the indicated boundary layer is chosen thin, and the nominal thickness is 0.5 ... 0.06 ⁇ m.
  • the difference in the width of the restricted area is either due to the type, or to an increase in the weight of one and the same material, which is used as a result of active radiation. For this reason, in the area of the output of the absorption coefficient ⁇ 0 in > cm “1 , the output laser radiation is 30 cm “ 1 ( ⁇ . ⁇ . ⁇ DD ge ⁇ , ⁇ ⁇ .ge inevitablyeg, ⁇ .29, ⁇ .1, ⁇ .23-25).
  • the other side of the other limited layer has a contact layer. ⁇ On the external parts of the contact layer and the service, the contact parts are completed.
  • a contact is arranged between, for example, the active layer and the boundary layer adjacent to the region
  • Exiting emitted laser radiation occurs after an extreme measure, a single refining of it to an optical group.
  • the used gradient layers are inside each of the successive layers (see, for example, (3.3.
  • ⁇ ⁇ edl ⁇ zhenny ⁇ us ⁇ ns ⁇ u ⁇ tsiya ⁇ inzhe ⁇ tsi ⁇ nny ⁇ laze ⁇ v ⁇ ealizue ⁇ sya ⁇ ezhim radiation vy ⁇ e ⁇ ayuscheg ⁇ for znachi ⁇ eln ⁇ b ⁇ lee shi ⁇ g ⁇ dia ⁇ az ⁇ na ugl ⁇ v vy ⁇ e ⁇ aniya ⁇ and s ⁇ ve ⁇ s ⁇ venn ⁇ , ⁇ n ⁇ sheny (n e ff / ⁇ 0) than in (113,004,063,189 alpha, 1977, ⁇ 013 3/19, 331 / 94.5 ⁇ ) ⁇ e ⁇ nyuyu g ⁇ anitsu ⁇ assma ⁇ ivaemy ⁇ ugl ⁇ v vy ⁇ e ⁇ aniya ⁇ ta ⁇ ⁇ edl ⁇ zhen ⁇ ⁇ edelya ⁇ s ⁇ n ⁇ sheniyami
  • Zame ⁇ im ch ⁇ ⁇ g ⁇ vye ⁇ l ⁇ n ⁇ s ⁇ i ⁇ v for ⁇ edl ⁇ zhenny ⁇ laze ⁇ v ⁇ i d ⁇ s ⁇ a ⁇ chn ⁇ b ⁇ lshi ⁇ znacheniya ⁇ angle ⁇ vy ⁇ e ⁇ aniya m ⁇ gu ⁇ by ⁇ ⁇ lucheny less, ⁇ l ⁇ ⁇ s ⁇ avneniyu with ⁇ g ⁇ vymi ⁇ ami laze ⁇ a low ugl ⁇ m vy ⁇ e ⁇ aniya ⁇ (see., Na ⁇ ime ⁇ (113,004,063,189 ⁇ , 1977, ⁇ 018 3/19 , 331 / 94.5 ⁇ ), but also by comparison with modern currents of modern injection lasers with quantitative active layers (see, for example, 1.1.
  • z ⁇ ⁇ sya introduced us s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ susches ⁇ venny ⁇ ⁇ izna ⁇ v ⁇ edl ⁇ zhenn ⁇ g ⁇ laze ⁇ a ⁇ zv ⁇ lyae ⁇ not ⁇ l ⁇ umensha ⁇ ⁇ g ⁇ vye ⁇ l ⁇ n ⁇ s ⁇ i ⁇ v, n ⁇ and ⁇ luchi ⁇ for ⁇ azlichny ⁇ ⁇ ns ⁇ u ⁇ tsy ⁇ blas ⁇ i vyv ⁇ da znachi ⁇ eln ⁇ uvelichi ⁇ linear ⁇ azme ⁇ a ⁇ e ⁇ u ⁇ y radiation laze ⁇ n ⁇ g ⁇ on ⁇ iches ⁇ y g ⁇ ani in ve ⁇ i ⁇ aln ⁇ y
  • the emission output may be a benefit, in particular if it is absent from the intergenerational laser radiation.
  • ⁇ ne ⁇ y ⁇ sluchaya ⁇ zhela ⁇ eln ⁇ ⁇ ⁇ ayney me ⁇ e in ⁇ dn ⁇ y of ⁇ sled ⁇ va ⁇ eln ⁇ s ⁇ ey sl ⁇ ev laze ⁇ n ⁇ y ge ⁇ e ⁇ s ⁇ u ⁇ u ⁇ y vy ⁇ lni ⁇ , ⁇ ⁇ ayney me ⁇ e, ⁇ din sl ⁇ y with ⁇ aza ⁇ elem ⁇ el ⁇ mleniya least ⁇ v ⁇ .
  • both the area of the optical ground with the projecting parts should be placed at the right angles of inclination ⁇ .
  • the spare parts (12), (14) for the whole range of angles ⁇ are also suitable for suitable lasers with an output that is better for outdoor use.
  • the output of the laser radiation from the active layer may be in the direction of the transient, as a result of the active layer of the laser. For this reason, for one-beam, two-beam, and two-beam radiation outputs with a length of ⁇ _ 0 extra selected more than a century, the angle of the output is exceeded - (20)
  • the linear size of the acupuncture at the exit of the external part of the surgical ground is equal to
  • the corresponding radiation transmitter is divided by the expression of the output where the angle of refraction ⁇ see in (3). Therefore, with an increase in the outflow angle ⁇ , simultaneously with an increase in ⁇ ! ⁇ nachinae ⁇ umensha ⁇ sya ⁇ n ⁇ shenie ⁇ ⁇ P ⁇ _ ⁇ s ⁇ ⁇ and ⁇ i ⁇ iblizhenii vy ⁇ e ⁇ aniya angle values ⁇ ⁇ corner ⁇ ln ⁇ g ⁇ vnu ⁇ enneg ⁇ ⁇ azheniya ⁇ , ⁇ ⁇ y zame ⁇ n ⁇ less ta ⁇ and ⁇ aven
  • ⁇ ⁇ zhe v ⁇ emya for vse ⁇ ⁇ assm ⁇ enny ⁇ m ⁇ di ⁇ i ⁇ atsy inzhe ⁇ tsi ⁇ nn ⁇ g ⁇ laze ⁇ a with ⁇ iches ⁇ imi g ⁇ anyami, ⁇ a ⁇ allelnymi ⁇ e ⁇ endi ⁇ ulya ⁇ n ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i, ⁇ a ⁇ a ⁇ e ⁇ ny b ⁇ lshie ⁇ l ⁇ n ⁇ s ⁇ i ⁇ g ⁇ vy ⁇ ⁇ v, ned ⁇ s ⁇ a ⁇ chn ⁇ small as ⁇ igma ⁇ izm and ⁇ as ⁇ dim ⁇ s ⁇ .
  • Another basic advantage of the available lasers is the possibility of increasing the effective length of the optical device for more than 1 cm and without any more important laziness.
  • a further convenient access for lasers is an increase in their efficiency, especially for larger lengths of an optical source.
  • ch ⁇ for ⁇ edl ⁇ zhenny ⁇ us dia ⁇ az ⁇ n ⁇ v ugl ⁇ v vy ⁇ e ⁇ aniya ⁇ and ⁇ ugl ⁇ v na ⁇ l ⁇ na ⁇ iches ⁇ i ⁇ g ⁇ aney na ⁇ yadu s ⁇ reduction ⁇ g ⁇ v ⁇ y ⁇ l ⁇ n ⁇ s ⁇ i ⁇ a m ⁇ zhe ⁇ by ⁇ ⁇ luchen ⁇ increase effe ⁇ ivn ⁇ s ⁇ i c ⁇ for ⁇ edl ⁇ zhenny ⁇ us laze ⁇ v.
  • the impor- tant values of the values of the external differential efficiency ⁇ ⁇ are indicated in the data below for the performance examples.
  • the values of ⁇ ⁇ ⁇ . and, respectively, may be ⁇ 1 mm and ⁇ 0.3 mrad or less.
  • the aforementioned is fair only when the laser is operating in the single mode, more precisely in the mode of international cooperation.
  • the effective angle of divergence ⁇ is ⁇ (see, for example, ( ⁇ _. ⁇ réelle ⁇ réelle ⁇ schreib Prop Prop Prop Prop Prop Propylene Propylene), ⁇ _. ⁇ founded ⁇ founded ⁇ founded ⁇ , ⁇ .20, ⁇ .20 for applications below which are used to perform an injection laser, it may be possible to achieve values of a few mild or less.
  • the angle ⁇ ⁇ does not depend on ⁇ ⁇ ⁇ ⁇ and it has the same values of ⁇ 0.2 ... 0.5 rad, which is also common injection lasers (see, for example,, 1.1.8. . ⁇ a ⁇ de et al., ⁇ estgó ⁇ s ⁇ ⁇ .eyeig (1992), ⁇ .28, ⁇ .25, ⁇ .2345-2346) in many cases, the mode of operation.
  • FIG. 6 on ⁇ ig.7 - 9 - with ⁇ l ⁇ s ⁇ s ⁇ yami ⁇ azha ⁇ eley ⁇ iches ⁇ g ⁇ ⁇ ez ⁇ na ⁇ a and ⁇ iches ⁇ imi g ⁇ anyami ⁇ blas ⁇ i vyv ⁇ da, ⁇ a ⁇ allelnymi ⁇ e ⁇ endi ⁇ ulya ⁇ n ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i and ⁇ a ⁇ zhe on ⁇ ig.7 - with dlin ⁇ y C ⁇ in b ⁇ lshey length C and the emission dvus ⁇ nnim vyv ⁇ d ⁇ m on ⁇ ig.8 - with dlin ⁇ y C centuries b ⁇ lshey length C P, ⁇ dn ⁇ a ⁇ nym ⁇ azheniem in ⁇ blas ⁇ i vyv ⁇ da and ⁇ dn ⁇ s ⁇ nim radiation vy
  • va ⁇ ian ⁇ a ⁇ vy ⁇ lneniya ⁇ miches ⁇ g ⁇ ⁇ n ⁇ a ⁇ a s ⁇ s ⁇ ny ⁇ azmescheniya s ⁇ eds ⁇ va radiation vyv ⁇ da and imenn ⁇ on ⁇ ig.10 - on na ⁇ uzhn ⁇ y ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ blas ⁇ i radiation vyv ⁇ da on ⁇ ig.11 - on ele ⁇ v ⁇ dn ⁇ m sl ⁇ e having the smallest value ⁇ ⁇ ⁇ i ⁇ iny za ⁇ eschenn ⁇ y z ⁇ ny s ⁇ edi s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ i sl ⁇ ev, ⁇ imy ⁇ ayuschi ⁇ ⁇ ⁇ blas ⁇ i radiation output, in Fig. 12 - on the electronic front part of the area of radiation output, which is limited to a laser heterojunction.
  • FIG. 13 a graphic separation of the output radiation in a distant field of a conventional injection laser is shown.
  • the proposed injectable laser 1 (see Fig. 1) is comprised of service 2, the laser heterostructure 3 containing an active layer of 4, which is located between the followings.
  • the laser heterostructure 3 With the terrestrial laser, the laser heterostructure 3 is limited to 7 dischargers with 8 discharges, which have a conversion factor of ⁇ ⁇ and ,99 2 , ⁇ 2 , ⁇ .
  • the distance between the owners of 7 determines the length of the main part of the factory-transmitter for this variant equal to 3000 ⁇ m. Note that the owners of 7, in this case, are sharp, in other cases there may be either a shared wiring, or with a disconnected device.
  • ⁇ ⁇ assma ⁇ ivaem ⁇ m va ⁇ ian ⁇ e is ⁇ lneniya AREA OF ONE OF THE OPTICAL GROUNDS 11 AREA OF EXIT 9 PERFORMANCE AS WELL AS TO USE OF ONE OF THE MANAGERS OF 7 OPERATING CENTER. It was applied to her 20
  • the other optical bar 11 is made with a slope angle ⁇ , equal to the aggregate ⁇ ⁇ ⁇ ⁇ / ⁇ 0 ⁇ , and it is nominally 18 ° 40 'for this version. It is equipped with an output of 10 by applying a lightening of 15 with a factor of ⁇ 15 , equal
  • the output of 10 may be flat, as in this case, for example, ⁇ a ⁇ ve ⁇ n ⁇ s ⁇ i, udalenn ⁇ y ⁇ a ⁇ ivn ⁇ g ⁇ sl ⁇ ya 4, ⁇ ⁇ sled ⁇ va ⁇ eln ⁇ s ⁇ i 5 sl ⁇ ev ⁇ to laze ⁇ n ⁇ y ge ⁇ e ⁇ s ⁇ u ⁇ u ⁇ y 3 ⁇ meschen ⁇ n ⁇ a ⁇ ny sl ⁇ y 16 ⁇ - ⁇ i ⁇ a ⁇ v ⁇ dim ⁇ s ⁇ i and it s ⁇ mi ⁇ van ⁇ miches ⁇ y ⁇ n ⁇ a ⁇ 17.
  • the adjacent laser 1 (see Fig. 1) is composed of a series of non-hazardous, non-overexposed laser sources
  • the laser heterostructure contains layers 19 to 21 of investigation 5, where layer 19 is an external boundary with a contact layer of 16; Subsequent 22 to 24 active layer 4; layers 25–27 of investigation 6, where layer 27 is an external one, limited by the area of output 9. Words 25–27 and area of output 9 means the result of radiation output 12. In this case,
  • Lazer 1 was installed on a hot metal plate (not shown in Fig. 1); 21
  • the proposed device operates the following way. With the connection to the power supply, the proposed device is equipped with an injection of unequal carriers and an active wavelength of 9 nm. With this operating principle, the laser is operating in the flowing mode. With this part of the radiation spreads to the area of output, forming in it the emitting non-wavy wave at the angle of the exit from the outside of the laser.
  • va ⁇ ian ⁇ a is ⁇ lneniya
  • ⁇ a ⁇ and izl ⁇ zhenny ⁇ below va ⁇ ian ⁇ v is ⁇ lneniya were ⁇ lucheny numerical m ⁇ deli ⁇ vaniem
  • vy ⁇ lnennym ⁇ s ⁇ etsialn ⁇ ⁇ az ⁇ ab ⁇ ann ⁇ y us ⁇ g ⁇ amme in ⁇ sn ⁇ vu ⁇ y ⁇ l ⁇ zhen ma ⁇ ichny me ⁇ d ⁇ esheniya u ⁇ avneny ⁇ a ⁇ svella ( ⁇ .SY ⁇ a ⁇ , ⁇ . ⁇ k ⁇ P, ⁇ ig ⁇ .
  • P ⁇ i ⁇ asche ⁇ a ⁇ were ⁇ a ⁇ zhe ⁇ inya ⁇ y (here and in d ⁇ ugi ⁇ va ⁇ ian ⁇ a ⁇ is ⁇ lneniya) ⁇ i ⁇ ichnye values ⁇ e ⁇ itsien ⁇ a ⁇ e ⁇ ⁇ ⁇ 0 laze ⁇ n ⁇ g ⁇ radiation on account ⁇ gl ⁇ scheniya and ⁇ iches ⁇ g ⁇ ⁇ asseyaniya in a ⁇ ivn ⁇ y ⁇ blas ⁇ i ⁇ avnym 3 cm "1 (see., Na ⁇ ime ⁇ , ( ⁇ . ⁇ .
  • the laser emissivity due to the exit from the active area through the 7 fuse carrier is 0.0335 cm "1 ;
  • the coefficient of laser radiation emitted from layer 19 to the contact layer 16 is 2 • 10 "5 cm “1 ;
  • ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m decrease in the angle values ⁇ ⁇ vy ⁇ e ⁇ aniya 18 ° 40 'd ⁇ magnitude 3 ° 50' ⁇ ivel ⁇ ⁇ susches ⁇ venn ⁇ mu reduction ⁇ sn ⁇ vny ⁇ ⁇ a ⁇ a ⁇ e ⁇ is ⁇ i ⁇ laze ⁇ a 1.
  • ⁇ a ⁇ ig. 2 laser 1 is shown, for short length ⁇ _ you have selected an equal of 3000 ⁇ m and a slight increase in length _. 0 ⁇ .
  • ⁇ azha ⁇ el 7 ⁇ iches ⁇ g ⁇ ⁇ ez ⁇ na ⁇ a s ⁇ s ⁇ ny vyv ⁇ da radiation for u ⁇ scheniya ⁇ e ⁇ n ⁇ l ⁇ gichn ⁇ s ⁇ i izg ⁇ vleniya vy ⁇ lnen with ⁇ em same na ⁇ l ⁇ n ⁇ m and ⁇ em same ⁇ e ⁇ itsien ⁇ m ⁇ azheniya, and ch ⁇ na ⁇ l ⁇ nnaya ⁇ iches ⁇ aya g ⁇ an 11.
  • D ⁇ ug ⁇ y va ⁇ ian ⁇ is ⁇ lneniya laze ⁇ a 1 iz ⁇ b ⁇ azhenn ⁇ g ⁇ on ⁇ ig.2 in ⁇ m was is ⁇ lz ⁇ vana laze ⁇ naya ge ⁇ e ⁇ s ⁇ u ⁇ u ⁇ a with ugl ⁇ m vy ⁇ e ⁇ aniya ⁇ , ⁇ avn ⁇ m 3 ° 50 ', ⁇ ichem ⁇ blas ⁇ vyv ⁇ da vy ⁇ lnena ⁇ ln ⁇ s ⁇ yu nelegi ⁇ vann ⁇ y and shi ⁇ ina meza ⁇ l ⁇ s ⁇ a ⁇ avna 3 m ⁇ m.
  • Omcontact 18 was owned by this company.
  • the 25 is located on the premises of the inclined opposites 11 on the outside 14.
  • the rooms 15, located on the ground, have no power supply.
  • the area of pin 9 was located in a sim- ilarly positive optical area (active area).
  • the length ⁇ - ⁇ was selected to be equal to 3000 ⁇ m
  • the length ⁇ _ was taken out to the original 4000 ⁇ m
  • the long length was selected to be longer than _.
  • Rev. The best radiation was dispersed in two beams and directed in parallel to the normal plane of the radiation. The rest of the specifications have changed insignificantly.
  • both optical borders 11 are located in parallel to the normal area.
  • the following are shown in Figure 15, having a conversion factor of ⁇ , equal to 0.01.
  • the lengths of internal 13 and external 14 of the area of the output 9 are greater than the length of the optical outlet.
  • ⁇ yv ⁇ d radiation ⁇ izv ⁇ di ⁇ sya che ⁇ ez vyv ⁇ dyaschie ⁇ ve ⁇ n ⁇ s ⁇ i 10 ⁇ bei ⁇ ⁇ iches ⁇ i ⁇ g ⁇ aney 11.
  • the output of the flat area is 11% higher than the average
  • the optical borders 11 are also parallel to the transient pendulum.
  • One of them is an extension of the owner of the tool 7 and a protective contact 8 is applied to it with an output factor of ⁇ , equal to 0.99.
  • an illuminating spray 15 was applied for the emission of radiation.
  • the area of radiation output is selected from two parts 30 and 31 of a different elec- tricity.
  • both optical borders 11 are also placed in parallel to the flat area.
  • One of them is equipped with a deflecting switch of 8 with a coefficient of protection of, equal to 0.99.
  • a deflecting switch of 8 with a coefficient of protection of, equal to 0.99.
  • an illuminating accessory 15 having a coefficient of protection ⁇ , equal to 0.01.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Cette invention concerne un laser à injection qui assure une sortie des modes de fuite hors de la zone active dans des conditions où les valeurs de courant seuil, d'astigmatisme et d'angle de divergence sont sensiblement réduites, où la longueur efficace du résonateur optique, la puissance de sortie et la luminosité sont accrues, ainsi que dans des conditions offrant une plus grande plage de modifications de l'orientation du rayonnement sortant. Ce laser comprend une hétérostructure dont toutes les couches possèdent des compositions et des épaisseurs se trouvant dans des plages prédéterminées, même en ce qui concerne la couche active et les couches successives. L'un de ces ensembles de couches fait partie intégrante du dispositif de sortie et borde la zone de sortie. Cette invention se rapporte également à une plage étendue d'angles de fuite ζ, à diverses structures de la zone de sortie du rayonnement de fuite et du dispositif de sortie du rayonnement ainsi formé, ceci tout en ayant recours à des bords optiques qui sont inclinés selon des plages prédéterminées d'angles d'inclinaison γ.
PCT/RU1998/000258 1997-08-08 1998-08-06 Laser a injection WO1999008352A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU90114/98A AU9011498A (en) 1997-08-08 1998-08-06 Injection laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU97112914/25A RU2133534C1 (ru) 1997-08-08 1997-08-08 Инжекционный лазер
RU97112914 1997-08-08

Publications (1)

Publication Number Publication Date
WO1999008352A1 true WO1999008352A1 (fr) 1999-02-18

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PCT/RU1998/000258 WO1999008352A1 (fr) 1997-08-08 1998-08-06 Laser a injection

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AU (1) AU9011498A (fr)
RU (1) RU2133534C1 (fr)
WO (1) WO1999008352A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649938B1 (en) 1998-03-12 2003-11-18 D-Led Corporation Semiconductor optical amplifier
US6748002B2 (en) 1998-08-10 2004-06-08 D-Led Corporation Injection laser
EP1595316A4 (fr) * 2003-02-19 2006-08-23 Pbc Lasers Ltd Appareil et procede de conversion de frequence
WO2007100341A3 (fr) * 2005-04-29 2007-11-15 Massachusetts Inst Technology Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant

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RU2142661C1 (ru) 1998-12-29 1999-12-10 Швейкин Василий Иванович Инжекционный некогерентный излучатель
WO2003071643A1 (fr) * 2002-02-18 2003-08-28 Ot´Kratoe Aktsyonernoe Obshchestvo ¨Sistema-Venchur¨ Heterostructure, laser a injection, element amplificateur a semi-conducteur et amplificateur optique a semi-conducteur
RU2539117C1 (ru) * 2013-10-09 2015-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российский академии наук Полупроводниковый усилитель оптического излучения

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EP0247267A1 (fr) * 1986-05-26 1987-12-02 Bernard Sermage Laser à semiconducteur muni de moyens de réinjection de l'émission spontanée dans la couche active
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Publication number Priority date Publication date Assignee Title
US6649938B1 (en) 1998-03-12 2003-11-18 D-Led Corporation Semiconductor optical amplifier
US6748002B2 (en) 1998-08-10 2004-06-08 D-Led Corporation Injection laser
EP1595316A4 (fr) * 2003-02-19 2006-08-23 Pbc Lasers Ltd Appareil et procede de conversion de frequence
WO2007100341A3 (fr) * 2005-04-29 2007-11-15 Massachusetts Inst Technology Systeme laser a semi-conducteur a plaque a incidence rasante et procede correspondant

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AU9011498A (en) 1999-03-01

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