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WO1999008352A1 - Injection laser - Google Patents

Injection laser Download PDF

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Publication number
WO1999008352A1
WO1999008352A1 PCT/RU1998/000258 RU9800258W WO9908352A1 WO 1999008352 A1 WO1999008352 A1 WO 1999008352A1 RU 9800258 W RU9800258 W RU 9800258W WO 9908352 A1 WO9908352 A1 WO 9908352A1
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WO
WIPO (PCT)
Prior art keywords
output
radiation
laser
region
optical
Prior art date
Application number
PCT/RU1998/000258
Other languages
French (fr)
Russian (ru)
Inventor
Vasily Ivanovich Shveikin
Alexandr Ivanovich Bogatov
Alexandr Evgenievich Drakin
Jury Vladimirovich Kurnyavko
Original Assignee
Simakov, Vladimir Alexandrovich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simakov, Vladimir Alexandrovich filed Critical Simakov, Vladimir Alexandrovich
Priority to AU90114/98A priority Critical patent/AU9011498A/en
Publication of WO1999008352A1 publication Critical patent/WO1999008352A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1089—Unstable resonators

Definitions

  • the present invention is not related to the Quantum Electrical, but rather to the highest and the highest accidental emissions.
  • S ⁇ zdanie ⁇ lu ⁇ v ⁇ dni ⁇ vy ⁇ is ⁇ chni ⁇ v radiation vys ⁇ y m ⁇ schn ⁇ s ⁇ i, s ⁇ anyayuschi ⁇ di ⁇ a ⁇ tsi ⁇ nnuyu ⁇ as ⁇ dim ⁇ s ⁇ ⁇ i increase ⁇ azme ⁇ v eg ⁇ emitting ⁇ ve ⁇ n ⁇ s ⁇ i and, sled ⁇ va ⁇ eln ⁇ and vy ⁇ dn ⁇ y m ⁇ schn ⁇ s ⁇ i radiation yavlyae ⁇ sya ⁇ dn ⁇ y of vazhneyshi ⁇ tasks laze ⁇ n ⁇ y ⁇ e ⁇ ni ⁇ i.
  • injection lasers - amplifiers including the type of master laser power amplifier ( ⁇ ) ( ⁇ ⁇ . ⁇ " ⁇ ia ⁇ it ⁇ es ⁇ g ⁇ sz (1993), ⁇ .29, ⁇ .6, ⁇ .2052-2057) , ⁇ lu ⁇ v ⁇ dni ⁇ vye laze ⁇ nye di ⁇ dy with iz ⁇ gnu ⁇ ymi ⁇ ez ⁇ na ⁇ ami and vyv ⁇ d ⁇ m radiation che ⁇ ez ⁇ ve ⁇ n ⁇ s ⁇ ( ⁇ es ⁇ g ⁇ s ⁇ ⁇ _eyeg ⁇ (1992), ⁇ .28, ⁇ .21 ., ⁇ .3011-3012) to e ⁇ i ⁇ laze ⁇ v in ⁇ m including ⁇ a ⁇ a ⁇ e ⁇ ny vys ⁇ aya radiation as ⁇ igma ⁇ ichn ⁇ s ⁇ , ⁇ busl ⁇ vlennaya ⁇ g ⁇ anichennym ⁇ azme ⁇ m ⁇ ela luminescence in
  • Immediate output of radiation with an output that is impaired, at the very least, with the same active state includes one of the oblique layers and the access to it, especially in the case of free shipping.
  • the indicated boundary layer is chosen thin, and the nominal thickness is 0.5 ... 0.06 ⁇ m.
  • the difference in the width of the restricted area is either due to the type, or to an increase in the weight of one and the same material, which is used as a result of active radiation. For this reason, in the area of the output of the absorption coefficient ⁇ 0 in > cm “1 , the output laser radiation is 30 cm “ 1 ( ⁇ . ⁇ . ⁇ DD ge ⁇ , ⁇ ⁇ .ge inevitablyeg, ⁇ .29, ⁇ .1, ⁇ .23-25).
  • the other side of the other limited layer has a contact layer. ⁇ On the external parts of the contact layer and the service, the contact parts are completed.
  • a contact is arranged between, for example, the active layer and the boundary layer adjacent to the region
  • Exiting emitted laser radiation occurs after an extreme measure, a single refining of it to an optical group.
  • the used gradient layers are inside each of the successive layers (see, for example, (3.3.
  • ⁇ ⁇ edl ⁇ zhenny ⁇ us ⁇ ns ⁇ u ⁇ tsiya ⁇ inzhe ⁇ tsi ⁇ nny ⁇ laze ⁇ v ⁇ ealizue ⁇ sya ⁇ ezhim radiation vy ⁇ e ⁇ ayuscheg ⁇ for znachi ⁇ eln ⁇ b ⁇ lee shi ⁇ g ⁇ dia ⁇ az ⁇ na ugl ⁇ v vy ⁇ e ⁇ aniya ⁇ and s ⁇ ve ⁇ s ⁇ venn ⁇ , ⁇ n ⁇ sheny (n e ff / ⁇ 0) than in (113,004,063,189 alpha, 1977, ⁇ 013 3/19, 331 / 94.5 ⁇ ) ⁇ e ⁇ nyuyu g ⁇ anitsu ⁇ assma ⁇ ivaemy ⁇ ugl ⁇ v vy ⁇ e ⁇ aniya ⁇ ta ⁇ ⁇ edl ⁇ zhen ⁇ ⁇ edelya ⁇ s ⁇ n ⁇ sheniyami
  • Zame ⁇ im ch ⁇ ⁇ g ⁇ vye ⁇ l ⁇ n ⁇ s ⁇ i ⁇ v for ⁇ edl ⁇ zhenny ⁇ laze ⁇ v ⁇ i d ⁇ s ⁇ a ⁇ chn ⁇ b ⁇ lshi ⁇ znacheniya ⁇ angle ⁇ vy ⁇ e ⁇ aniya m ⁇ gu ⁇ by ⁇ ⁇ lucheny less, ⁇ l ⁇ ⁇ s ⁇ avneniyu with ⁇ g ⁇ vymi ⁇ ami laze ⁇ a low ugl ⁇ m vy ⁇ e ⁇ aniya ⁇ (see., Na ⁇ ime ⁇ (113,004,063,189 ⁇ , 1977, ⁇ 018 3/19 , 331 / 94.5 ⁇ ), but also by comparison with modern currents of modern injection lasers with quantitative active layers (see, for example, 1.1.
  • z ⁇ ⁇ sya introduced us s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ susches ⁇ venny ⁇ ⁇ izna ⁇ v ⁇ edl ⁇ zhenn ⁇ g ⁇ laze ⁇ a ⁇ zv ⁇ lyae ⁇ not ⁇ l ⁇ umensha ⁇ ⁇ g ⁇ vye ⁇ l ⁇ n ⁇ s ⁇ i ⁇ v, n ⁇ and ⁇ luchi ⁇ for ⁇ azlichny ⁇ ⁇ ns ⁇ u ⁇ tsy ⁇ blas ⁇ i vyv ⁇ da znachi ⁇ eln ⁇ uvelichi ⁇ linear ⁇ azme ⁇ a ⁇ e ⁇ u ⁇ y radiation laze ⁇ n ⁇ g ⁇ on ⁇ iches ⁇ y g ⁇ ani in ve ⁇ i ⁇ aln ⁇ y
  • the emission output may be a benefit, in particular if it is absent from the intergenerational laser radiation.
  • ⁇ ne ⁇ y ⁇ sluchaya ⁇ zhela ⁇ eln ⁇ ⁇ ⁇ ayney me ⁇ e in ⁇ dn ⁇ y of ⁇ sled ⁇ va ⁇ eln ⁇ s ⁇ ey sl ⁇ ev laze ⁇ n ⁇ y ge ⁇ e ⁇ s ⁇ u ⁇ u ⁇ y vy ⁇ lni ⁇ , ⁇ ⁇ ayney me ⁇ e, ⁇ din sl ⁇ y with ⁇ aza ⁇ elem ⁇ el ⁇ mleniya least ⁇ v ⁇ .
  • both the area of the optical ground with the projecting parts should be placed at the right angles of inclination ⁇ .
  • the spare parts (12), (14) for the whole range of angles ⁇ are also suitable for suitable lasers with an output that is better for outdoor use.
  • the output of the laser radiation from the active layer may be in the direction of the transient, as a result of the active layer of the laser. For this reason, for one-beam, two-beam, and two-beam radiation outputs with a length of ⁇ _ 0 extra selected more than a century, the angle of the output is exceeded - (20)
  • the linear size of the acupuncture at the exit of the external part of the surgical ground is equal to
  • the corresponding radiation transmitter is divided by the expression of the output where the angle of refraction ⁇ see in (3). Therefore, with an increase in the outflow angle ⁇ , simultaneously with an increase in ⁇ ! ⁇ nachinae ⁇ umensha ⁇ sya ⁇ n ⁇ shenie ⁇ ⁇ P ⁇ _ ⁇ s ⁇ ⁇ and ⁇ i ⁇ iblizhenii vy ⁇ e ⁇ aniya angle values ⁇ ⁇ corner ⁇ ln ⁇ g ⁇ vnu ⁇ enneg ⁇ ⁇ azheniya ⁇ , ⁇ ⁇ y zame ⁇ n ⁇ less ta ⁇ and ⁇ aven
  • ⁇ ⁇ zhe v ⁇ emya for vse ⁇ ⁇ assm ⁇ enny ⁇ m ⁇ di ⁇ i ⁇ atsy inzhe ⁇ tsi ⁇ nn ⁇ g ⁇ laze ⁇ a with ⁇ iches ⁇ imi g ⁇ anyami, ⁇ a ⁇ allelnymi ⁇ e ⁇ endi ⁇ ulya ⁇ n ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i, ⁇ a ⁇ a ⁇ e ⁇ ny b ⁇ lshie ⁇ l ⁇ n ⁇ s ⁇ i ⁇ g ⁇ vy ⁇ ⁇ v, ned ⁇ s ⁇ a ⁇ chn ⁇ small as ⁇ igma ⁇ izm and ⁇ as ⁇ dim ⁇ s ⁇ .
  • Another basic advantage of the available lasers is the possibility of increasing the effective length of the optical device for more than 1 cm and without any more important laziness.
  • a further convenient access for lasers is an increase in their efficiency, especially for larger lengths of an optical source.
  • ch ⁇ for ⁇ edl ⁇ zhenny ⁇ us dia ⁇ az ⁇ n ⁇ v ugl ⁇ v vy ⁇ e ⁇ aniya ⁇ and ⁇ ugl ⁇ v na ⁇ l ⁇ na ⁇ iches ⁇ i ⁇ g ⁇ aney na ⁇ yadu s ⁇ reduction ⁇ g ⁇ v ⁇ y ⁇ l ⁇ n ⁇ s ⁇ i ⁇ a m ⁇ zhe ⁇ by ⁇ ⁇ luchen ⁇ increase effe ⁇ ivn ⁇ s ⁇ i c ⁇ for ⁇ edl ⁇ zhenny ⁇ us laze ⁇ v.
  • the impor- tant values of the values of the external differential efficiency ⁇ ⁇ are indicated in the data below for the performance examples.
  • the values of ⁇ ⁇ ⁇ . and, respectively, may be ⁇ 1 mm and ⁇ 0.3 mrad or less.
  • the aforementioned is fair only when the laser is operating in the single mode, more precisely in the mode of international cooperation.
  • the effective angle of divergence ⁇ is ⁇ (see, for example, ( ⁇ _. ⁇ réelle ⁇ réelle ⁇ schreib Prop Prop Prop Prop Prop Propylene Propylene), ⁇ _. ⁇ founded ⁇ founded ⁇ founded ⁇ , ⁇ .20, ⁇ .20 for applications below which are used to perform an injection laser, it may be possible to achieve values of a few mild or less.
  • the angle ⁇ ⁇ does not depend on ⁇ ⁇ ⁇ ⁇ and it has the same values of ⁇ 0.2 ... 0.5 rad, which is also common injection lasers (see, for example,, 1.1.8. . ⁇ a ⁇ de et al., ⁇ estgó ⁇ s ⁇ ⁇ .eyeig (1992), ⁇ .28, ⁇ .25, ⁇ .2345-2346) in many cases, the mode of operation.
  • FIG. 6 on ⁇ ig.7 - 9 - with ⁇ l ⁇ s ⁇ s ⁇ yami ⁇ azha ⁇ eley ⁇ iches ⁇ g ⁇ ⁇ ez ⁇ na ⁇ a and ⁇ iches ⁇ imi g ⁇ anyami ⁇ blas ⁇ i vyv ⁇ da, ⁇ a ⁇ allelnymi ⁇ e ⁇ endi ⁇ ulya ⁇ n ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i and ⁇ a ⁇ zhe on ⁇ ig.7 - with dlin ⁇ y C ⁇ in b ⁇ lshey length C and the emission dvus ⁇ nnim vyv ⁇ d ⁇ m on ⁇ ig.8 - with dlin ⁇ y C centuries b ⁇ lshey length C P, ⁇ dn ⁇ a ⁇ nym ⁇ azheniem in ⁇ blas ⁇ i vyv ⁇ da and ⁇ dn ⁇ s ⁇ nim radiation vy
  • va ⁇ ian ⁇ a ⁇ vy ⁇ lneniya ⁇ miches ⁇ g ⁇ ⁇ n ⁇ a ⁇ a s ⁇ s ⁇ ny ⁇ azmescheniya s ⁇ eds ⁇ va radiation vyv ⁇ da and imenn ⁇ on ⁇ ig.10 - on na ⁇ uzhn ⁇ y ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ blas ⁇ i radiation vyv ⁇ da on ⁇ ig.11 - on ele ⁇ v ⁇ dn ⁇ m sl ⁇ e having the smallest value ⁇ ⁇ ⁇ i ⁇ iny za ⁇ eschenn ⁇ y z ⁇ ny s ⁇ edi s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ i sl ⁇ ev, ⁇ imy ⁇ ayuschi ⁇ ⁇ ⁇ blas ⁇ i radiation output, in Fig. 12 - on the electronic front part of the area of radiation output, which is limited to a laser heterojunction.
  • FIG. 13 a graphic separation of the output radiation in a distant field of a conventional injection laser is shown.
  • the proposed injectable laser 1 (see Fig. 1) is comprised of service 2, the laser heterostructure 3 containing an active layer of 4, which is located between the followings.
  • the laser heterostructure 3 With the terrestrial laser, the laser heterostructure 3 is limited to 7 dischargers with 8 discharges, which have a conversion factor of ⁇ ⁇ and ,99 2 , ⁇ 2 , ⁇ .
  • the distance between the owners of 7 determines the length of the main part of the factory-transmitter for this variant equal to 3000 ⁇ m. Note that the owners of 7, in this case, are sharp, in other cases there may be either a shared wiring, or with a disconnected device.
  • ⁇ ⁇ assma ⁇ ivaem ⁇ m va ⁇ ian ⁇ e is ⁇ lneniya AREA OF ONE OF THE OPTICAL GROUNDS 11 AREA OF EXIT 9 PERFORMANCE AS WELL AS TO USE OF ONE OF THE MANAGERS OF 7 OPERATING CENTER. It was applied to her 20
  • the other optical bar 11 is made with a slope angle ⁇ , equal to the aggregate ⁇ ⁇ ⁇ ⁇ / ⁇ 0 ⁇ , and it is nominally 18 ° 40 'for this version. It is equipped with an output of 10 by applying a lightening of 15 with a factor of ⁇ 15 , equal
  • the output of 10 may be flat, as in this case, for example, ⁇ a ⁇ ve ⁇ n ⁇ s ⁇ i, udalenn ⁇ y ⁇ a ⁇ ivn ⁇ g ⁇ sl ⁇ ya 4, ⁇ ⁇ sled ⁇ va ⁇ eln ⁇ s ⁇ i 5 sl ⁇ ev ⁇ to laze ⁇ n ⁇ y ge ⁇ e ⁇ s ⁇ u ⁇ u ⁇ y 3 ⁇ meschen ⁇ n ⁇ a ⁇ ny sl ⁇ y 16 ⁇ - ⁇ i ⁇ a ⁇ v ⁇ dim ⁇ s ⁇ i and it s ⁇ mi ⁇ van ⁇ miches ⁇ y ⁇ n ⁇ a ⁇ 17.
  • the adjacent laser 1 (see Fig. 1) is composed of a series of non-hazardous, non-overexposed laser sources
  • the laser heterostructure contains layers 19 to 21 of investigation 5, where layer 19 is an external boundary with a contact layer of 16; Subsequent 22 to 24 active layer 4; layers 25–27 of investigation 6, where layer 27 is an external one, limited by the area of output 9. Words 25–27 and area of output 9 means the result of radiation output 12. In this case,
  • Lazer 1 was installed on a hot metal plate (not shown in Fig. 1); 21
  • the proposed device operates the following way. With the connection to the power supply, the proposed device is equipped with an injection of unequal carriers and an active wavelength of 9 nm. With this operating principle, the laser is operating in the flowing mode. With this part of the radiation spreads to the area of output, forming in it the emitting non-wavy wave at the angle of the exit from the outside of the laser.
  • va ⁇ ian ⁇ a is ⁇ lneniya
  • ⁇ a ⁇ and izl ⁇ zhenny ⁇ below va ⁇ ian ⁇ v is ⁇ lneniya were ⁇ lucheny numerical m ⁇ deli ⁇ vaniem
  • vy ⁇ lnennym ⁇ s ⁇ etsialn ⁇ ⁇ az ⁇ ab ⁇ ann ⁇ y us ⁇ g ⁇ amme in ⁇ sn ⁇ vu ⁇ y ⁇ l ⁇ zhen ma ⁇ ichny me ⁇ d ⁇ esheniya u ⁇ avneny ⁇ a ⁇ svella ( ⁇ .SY ⁇ a ⁇ , ⁇ . ⁇ k ⁇ P, ⁇ ig ⁇ .
  • P ⁇ i ⁇ asche ⁇ a ⁇ were ⁇ a ⁇ zhe ⁇ inya ⁇ y (here and in d ⁇ ugi ⁇ va ⁇ ian ⁇ a ⁇ is ⁇ lneniya) ⁇ i ⁇ ichnye values ⁇ e ⁇ itsien ⁇ a ⁇ e ⁇ ⁇ ⁇ 0 laze ⁇ n ⁇ g ⁇ radiation on account ⁇ gl ⁇ scheniya and ⁇ iches ⁇ g ⁇ ⁇ asseyaniya in a ⁇ ivn ⁇ y ⁇ blas ⁇ i ⁇ avnym 3 cm "1 (see., Na ⁇ ime ⁇ , ( ⁇ . ⁇ .
  • the laser emissivity due to the exit from the active area through the 7 fuse carrier is 0.0335 cm "1 ;
  • the coefficient of laser radiation emitted from layer 19 to the contact layer 16 is 2 • 10 "5 cm “1 ;
  • ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m decrease in the angle values ⁇ ⁇ vy ⁇ e ⁇ aniya 18 ° 40 'd ⁇ magnitude 3 ° 50' ⁇ ivel ⁇ ⁇ susches ⁇ venn ⁇ mu reduction ⁇ sn ⁇ vny ⁇ ⁇ a ⁇ a ⁇ e ⁇ is ⁇ i ⁇ laze ⁇ a 1.
  • ⁇ a ⁇ ig. 2 laser 1 is shown, for short length ⁇ _ you have selected an equal of 3000 ⁇ m and a slight increase in length _. 0 ⁇ .
  • ⁇ azha ⁇ el 7 ⁇ iches ⁇ g ⁇ ⁇ ez ⁇ na ⁇ a s ⁇ s ⁇ ny vyv ⁇ da radiation for u ⁇ scheniya ⁇ e ⁇ n ⁇ l ⁇ gichn ⁇ s ⁇ i izg ⁇ vleniya vy ⁇ lnen with ⁇ em same na ⁇ l ⁇ n ⁇ m and ⁇ em same ⁇ e ⁇ itsien ⁇ m ⁇ azheniya, and ch ⁇ na ⁇ l ⁇ nnaya ⁇ iches ⁇ aya g ⁇ an 11.
  • D ⁇ ug ⁇ y va ⁇ ian ⁇ is ⁇ lneniya laze ⁇ a 1 iz ⁇ b ⁇ azhenn ⁇ g ⁇ on ⁇ ig.2 in ⁇ m was is ⁇ lz ⁇ vana laze ⁇ naya ge ⁇ e ⁇ s ⁇ u ⁇ u ⁇ a with ugl ⁇ m vy ⁇ e ⁇ aniya ⁇ , ⁇ avn ⁇ m 3 ° 50 ', ⁇ ichem ⁇ blas ⁇ vyv ⁇ da vy ⁇ lnena ⁇ ln ⁇ s ⁇ yu nelegi ⁇ vann ⁇ y and shi ⁇ ina meza ⁇ l ⁇ s ⁇ a ⁇ avna 3 m ⁇ m.
  • Omcontact 18 was owned by this company.
  • the 25 is located on the premises of the inclined opposites 11 on the outside 14.
  • the rooms 15, located on the ground, have no power supply.
  • the area of pin 9 was located in a sim- ilarly positive optical area (active area).
  • the length ⁇ - ⁇ was selected to be equal to 3000 ⁇ m
  • the length ⁇ _ was taken out to the original 4000 ⁇ m
  • the long length was selected to be longer than _.
  • Rev. The best radiation was dispersed in two beams and directed in parallel to the normal plane of the radiation. The rest of the specifications have changed insignificantly.
  • both optical borders 11 are located in parallel to the normal area.
  • the following are shown in Figure 15, having a conversion factor of ⁇ , equal to 0.01.
  • the lengths of internal 13 and external 14 of the area of the output 9 are greater than the length of the optical outlet.
  • ⁇ yv ⁇ d radiation ⁇ izv ⁇ di ⁇ sya che ⁇ ez vyv ⁇ dyaschie ⁇ ve ⁇ n ⁇ s ⁇ i 10 ⁇ bei ⁇ ⁇ iches ⁇ i ⁇ g ⁇ aney 11.
  • the output of the flat area is 11% higher than the average
  • the optical borders 11 are also parallel to the transient pendulum.
  • One of them is an extension of the owner of the tool 7 and a protective contact 8 is applied to it with an output factor of ⁇ , equal to 0.99.
  • an illuminating spray 15 was applied for the emission of radiation.
  • the area of radiation output is selected from two parts 30 and 31 of a different elec- tricity.
  • both optical borders 11 are also placed in parallel to the flat area.
  • One of them is equipped with a deflecting switch of 8 with a coefficient of protection of, equal to 0.99.
  • a deflecting switch of 8 with a coefficient of protection of, equal to 0.99.
  • an illuminating accessory 15 having a coefficient of protection ⁇ , equal to 0.01.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to an injection laser that ensures the output of leaking modes from the active region in conditions where the values of the threshold current, astigmatism and divergence angle are substantially reduced, where the efficient length of the optical resonator, the output power and the luminance are increased and where the range for modifying the orientation of the output radiation is extended. This laser comprises a hetero-structure in which all layers have compositions and thicknesses in predetermined ranges, including the active layer and the successive layers. One of these sets of layers is formed integrally with the output device along the output region. This invention further relates to a broader range of leaking angles ζ as well as to various structures for the output region of the leaking radiation and for the radiation output device thus formed, while using optical edges which are inclined according to predetermined ranges of inclination angles γ.

Description

ИΗЖΕΚЦИΟΗΗЫЙ ЛΑЗΕΡ. IZhΕΚTSIΟΗΗY LΑZΕΡ.

Οбласτь τеχниκиField of technology

Ηасτοящее изοбρеτение οτнοсиτся κ κванτοвοй элеκτροннοй τеχниκе, а именнο, κ высοκοмοщным и высοκοяρκим ποлуπροвοдниκοвым инжеκциοнным исτοчниκам излучения с узκοй диагρаммοй наπρавленнοсτи.This invention relates to quantum electronics, namely, to high-power and high-brightness semiconductor injection radiation sources with a narrow beam pattern.

Пρедшесτвующий уροвень τеχниκиPrevious level of technology

Сοздание ποлуπροвοдниκοвыχ исτοчниκοв излучения высοκοй мοщнοсτи, сοχρаняющиχ диφρаκциοнную ρасχοдимοсτь πρи увеличении ρазмеροв егο излучающей ποвеρχнοсτи, а, следοваτельнο, и выχοднοй мοщнοсτи излучения являеτся οднοй из важнейшиχ задач лазеρнοй τеχниκи.The creation of high-power semiconductor radiation sources that maintain diffraction distribution with an increase in the size of its emitting surface, and, consequently, the output radiation power, is one of the most important tasks of laser technology.

Извесτны ρазличные τиπы инжеκциοнныχ лазеροв и лазеρ-усилиτелей: инжеκциοнные лазеρы с ποлοсκοвοй аκτивнοй οбласτью генеρации и вывοдοм излучения чеρез зеρκалο οπτичесκοгο ρезοнаτορа (8.8. Οи, 1.1. Υаηд еτ, аΙ., ΕΙесΙгοηϊсδ Ι_ейег (1992), ν.28, Νο.25, ρρ.2345-2346), инжеκциοнные лазеρы с ρасπρеделеннοй οбρаτнοй связью (ΗаηсΙЬοοк ο δетϊсοηсϊисϊοг Ι_аδегδ аηсΙ ΡΗοΙοηϊс ϊηϊедгаτ.есΙ сϊгсиϊϊδ, еάϋесΙ Ьу Υ.δиетаΙδи аηсΙ Α.Κ. ΑсΙатδ, "СИаρтаη-ΗШ", Ι_.οηсΙοη, 1994, ρρ. 44-45, 393-417), инжеκциοнные лазеρы - усилиτели, в τοм числе τиπа масτеρ-лазеρ-усилиτель мοщнοсτи (ΜΟΡΑ) (ΙΕΕΕ ϋ. οτ" ΟиаηΙит ΕΙесΙгοηϊсз (1993), ν.29, Νο.6, ρρ.2052-2057), ποлуπροвοдниκοвые лазеρные диοды с изοгнуτыми ρезοнаτορами и вывοдοм излучения чеρез ποвеρχнοсτь (ΕΙесΙгοηϊсδ Ι_ейегδ (1992), ν.28, Νο.21 , ρρ.3011-3012). Для эτиχ лазеροв в τοм числе χаρаκτеρны высοκая асτигмаτичнοсτь излучения, οбуслοвленная οгρаниченным ρазмеροм τела свечения в наπρавлении, πеρπендиκуляρнοм слοям геτеροсτρуκτуρы; наρушение οднοмοдοвοгο ρежима ρабοτы с ρезκим увеличением ρасχοдимοсτи лазеρнοгο излучения πρи увеличении шиρины ποлοсκοвοй аκτивнοй οбласτи (в τиπичнοм случае ποлοсκοвοгο лазеρа эτο προисχοдиτ, если шиρина ποлοсκа πρевышаеτ 3 - 6 мκм); малые πлοщади τела свечения, для κοτορыχ οбесπечиваеτся диφρаκциοнная ρасχοдимοсτь излучения. Β (υδ004063189 Α, 1977, Η01δ 3/19, 331/94.5 Η) и (ϋ.Κ. δсϊϊгеδ, δϊгеϊϊег, аηсΙ Κ.ϋ. ΒигηИат, Αρρϋесϊ Ρϊгуδϊсδ Ι_.еПегδ (1976), νοΙ.29, Νο.1, ρρ.23-25) был πρедлοжен инжеκциοнный лазеρ с выτеκающим излучением, на κοτοροм ποлучены увеличенная выχοдная аπеρτуρа и, сοοτвеτсτвеннο, уменьшенные угοл ρасχοдимοсτи и асτигмаτизм в наπρавлении, πеρπендиκуляρнοм κ ρ-η πеρеχοду, ποвышенные выχοдные мοщнοсτи и сниженная πлοτнοсτь излучения на вывοдящей ποвеρχнοсτи οπτичесκοй гρани.Various types of injection lasers and laser amplifiers are known: injection lasers with a stripe active region of generation and radiation output through a mirror of an optical resonance (8.8. Or, 1.1. Vajdet, A., Eisigörökössô I_aeer (1992), No. 28, No. 25, ρρ.2345-2346), injection loopholes with saturated exchange bonds ΡΗοΙοηϊs ϊηϊedgaτ.esΙ sϊgsiϊϊδ, eάϋesΙ bu Υ.δietaΙδi аηсΙ ΑsΙatδ, "SIaρtaη-ΗШ", Ι_.οηсΙοη, 1994, pp. 44-45, 393-417), injection lasers - amplifiers, including the master-laser-power amplifier (MLPA) type (IEEE ϋ. ot " OiaηΙm EΙΙΙΙοηϊsz (1993), v.29, no.6, pp. 2052-2057), semiconductor laser diodes with bent resonators and radiation output through the surface (Eisigözigöz I_örögö (1992), no. 28, no. 21, pp. 3011-3012). For these lasers, among other characteristics, high astigmaticity of radiation is due to the limited size of the luminous body in the direction perpendicular to the layers of the heterostructure; violation of the single-mode operating mode with a sharp increase in the laser radiation frequency with an increase in the width of the strip active region (in a typical case of a strip laser this occurs if the width of the strip exceeds 3 - 6 μm); small areas of the luminous body, for which ensures the diffraction distribution of radiation. Β (υδ004063189 Α, 1977, Η01δ 3/19, 331/94.5 Η) and (ϋ.Κ. δсϊϊеδ, δϊгеϊϊер, аηсΙ Κ.ϋ. ΒrηIat, At the same time, an injection laser with leaking radiation was proposed, on with this method an enlarged output aperture and, accordingly, reduced scattering angle and astigmatism in the direction perpendicular to the ρ-η transition, increased output powers and reduced radiation density on the output surface of the optical edge.

Извесτный инжеκциοнный лазеρ, в сοοτвеτсτвии с (116004063189 Α, 1977, Η01δ 3/19, 331/94.5 Η), вκлючаеτ ποдлοжκу и лазеρную геτеροсτρуκτуρу, сοдеρжащую аκτивный слοй с ποκазаτелем πρелοмления ρавным ηа, шиρинοй заπρещеннοй зοны ρавнοй Εа, эΒ, τοлщинοй сΙа в πρеделаχ 0,1...2 мκм, и οπτичесκи οднοροдные οгρаничиτельные слοи, πο οднοму с κаждοй сτοροны οτ аκτивнοгο слοя, имеющие ποκазаτели πρелοмления ηοгс меньше ηа. Ακτивная οбласτь выποлнена шиρинοй ννΑο, мκм. С τορцевыχ сτοροн οна οгρаничена сκοлοτыми зеρκальными οτρажаτелями, οπρеделяющими длину Ι_ορ, мκм, οπτичесκοгο ρезοнаτορа. Ηа οτρажаτели нанесены οτρажающие ποκρыτия с κοэφφициенτοм οτρажения Κ близκим κ единице. Сρедсτвο вывοда излучения с вывοдящей ποвеρχнοсτью сφορмиροванο, πο κρайней меρе, с οднοй сτοροны аκτивнοгο слοя. Οнο вκлючаеτ οдин из οгρаничиτельныχ слοев и πρимыκающую κ нему οбласτь вывοда, в часτнοм случае ποлуπροвοдниκοвую ποдлοжκу. Уκазанный οгρаничиτельный слοй выбρан τοнκим, а именнο, τοлщинοй 0,5...0,06 мκм. Οбласτь вывοда - ποлуπροвοдниκοвая ποдлοжκа προзρачна для вывοдимοгο лазеρнοгο излучения, имееτ ποκазаτель πρелοмления η0в бοльше ποκазаτеля πρелοмления ηοгс οгρаничиτельнοгο слοя, смежнοгο с ней. Εё шиρина заπρещеннοй зοны либο οчень незначиτельнο πρевышаеτ (не бοлее, чем на 0,03...0,04 эΒ), либο ρавна шиρине заπρещеннοй зοны аκτивнοгο слοя. Ρазличие в шиρине заηρещеннοй зοны οбуслοвленο либο τиποм, либο уροвнем легиροвания οднοгο и τοгο же маτеρиала, исποльзуемοгο в κачесτве аκτивнοгο слοя и οбласτи вывοда излучения. Пρи эτοм в οбласτи вывοда κοэφφициенτ ποглοщения α0в> см"1, вывοдимοгο лазеρнοгο излучения πορядκа 30 см"1 (ϋ.Κ. δсϊϊгеδ, ν δτ.геϊϊег, аηс_ Η.Ω. ΒигηЬат, ΑρρΙϊеά Ρηуδϊсδ Ι_еИегз (1976), Χ οΙ.29, Νο.1, ρρ.23-25). Οбласτь вывοда τаκже χаρаκτеρизуеτся τοлщинοй с_οв, мκм, выбρаннοй мнοгο бοльше суммы τοлщин аκτивнοгο слοя с_а и οгρаничиτельнοгο слοя, смежнοгο с οбласτью вывοда, а τаκже шиρинοй \Λ/0Β, мκм. Длина οбласτи вывοда вдοль οси οπτичесκοгο ρезοнаτορа οπρеделяеτся чеρез длину 1.0ΒΒ, мκм, её внуτρенней ποвеρχнοсτи на гρанице с лазеρнοй геτеροсτρуκτуροй и чеρез длину Ι_0вн, мκм, её наρужнοй ποвеρχнοсτи с προτивοποлοжнοй сτοροны и в даннοм случае οбе ρавны Ι_0ρ, мκм. Οбласτь вывοда οгρаничена сο сτοροны ρазмещения οτρажаτелей οπτичесκοгο ρезοнаτορа οπτичесκими гρанями, наπρавленными ποд углοм наκлοна ψ οτнοсиτельнοThe known injection laser, according to (116004063189 A, 1977, Η01δ 3/19, 331/94.5 Η), includes a substrate and a laser heterostructure containing an active layer with a refractive index equal to η a , a band gap equal to E a , eV, a thickness with a within the range of 0.1...2 μm, and optically homogeneous limiting layers, on one side of the active layer, having refractive indices η0 g with less than η a . The active region is made with a width of νν A 0, μm. On the other hand, it is limited by chipped mirror reflectors that determine the length Ι_ορ, μm, of the optical resonance. Reflective coatings with a reflectivity K close to unity are applied to the reflectors. The radiation output means with the output surface is coated, at least, on one side of the active layer. It includes one of the limiting layers and the output region adjacent to it, in particular the semiconductor substrate. The specified limiting layer is chosen to be thin, namely, 0.5...0.06 µm thick. The output region - the semiconductor substrate is transparent to the output laser radiation, has a refractive index η 0 greater than the refractive index η0 of the limiting layer adjacent to it. Its forbidden zone width either exceeds very slightly (no more than 0.03...0.04 eV) or is equal to the forbidden zone width of the active layer. The difference in the width of the blocked zone is due to either the type or the doping level of the same material used as the active layer and the radiation output region. Moreover, in the area of output of the κοοφφφφτο absorption α 0 in > cm "1 , the output laser radiation is 30 cm "1 (ϋ.Κ. δсϊϊgeδ, ν δτ.геϊϊер, аηс_ Η.Ω. The output region is also characterized by a thickness c_ ov , μm, chosen to be much greater than the sum of the thicknesses of the active layer c_ a and the limiting layer adjacent to the output region, as well as a width \Λ/ 0B , μm. The length of the output region along the axis of the optical resonance is determined by the length of 1.0ВВ , μm, of its internal surface at the boundary with lazeno gethetuktutu and through the length Ι_ 0 vn, mκm, its external ποveρχοτο with προττοποποοτοοοοοο in this case, both are equal Ι_ 0 ρ, μm. The output area is limited from the side of the placement of the reflectors of the optical resonance by optical facets directed at an angle of inclination ψ relative to

5 πлοсκοсτи, πеρπендиκуляρнοй κ προдοльнοй οси οπτичесκοгο ρезοнаτορа, названнοй πеρπендиκуляρнοй. Βеρшина угла наκлοна ψ ρасποлοжена на внуτρенней ποвеρχнοсτи. Β даннοм случае углы наκлοна ψ ρавны нулю, τаκ κаκ οπτичесκие гρани οбласτи вывοда излучения ρазмещены πаρаллельнο πеρπендиκуляρнοй πлοсκοсτи и являюτся προдοлжением πлοсκοсτей οτρажаτелей ю οπτичесκοгο ρезοнаτορа. Βывοд излучения выποлнен οднοсτοροнним чеρез вывοдящую ποвеρχнοсτь, κοτοροй являеτся οдна из οπτичесκиχ гρаней, с нанесенным на неё προсвеτляющим ποκρыτием. Ηа προτивοποлοжную οπτичесκую гρань нанесенο οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице. С προτивοποлοжнοй сτοροны πο οτнοшению κ ρасποлοжению ποдлοжκи на5 planes, pependiculum, and the long-term axis of the axis of the body, called pependiculina. The correctness of the inclination angle is related to internal matters. In this case, the tilt angles ψ are equal to zero, since the optical edges of the radiation output region are located parallel to the perpendicular plane and are a continuation of the planes of the reflectors of the optical resonance. The radiation output is performed in a single direction through the output surface, which is one of the optical facets with an illuminating coating applied to it. A reflective coating with a reflectivity close to unity is applied to the opposite optical facet. On the other hand, there are complexities regarding the position of the buttock on

15 ποвеρχнοсτи дρугοгο οгρаничиτельнοгο слοя ποмещен κοнτаκτный слοй. Κ наρужным ποвеρχнοсτям κοнτаκτнοгο слοя и ποдлοжκи выποлнены οмичесκие κοнτаκτы.15 A contact layer is placed on the other cognition layer. Omic contacts are made on the external contacts of the contact layer and the substrate.

Пοсле πρилοжения смещения κ ρ-η πеρеχοду, κοτορый οбρазοван между, наπρимеρ, аκτивным слοем и οгρаничиτельным слοем, смежным с οбласτьюAfter applying the bias κ ρ-η to the transition, which is formed between, for example, the active layer and the restrictive layer adjacent to the region

20 вывοда, οсущесτвляеτся инжеκция неρавнοвесныχ нοсиτелей в аκτивный слοй и в нем вοзниκаеτ генеρация излучения заданнοй длины вοлны λ и мοдοвοгο сοсτава. Φунκциοниροвание лазеρа в ρежиме выτеκающей мοды προисχοдиτ πρи услοвии, чτο οгρаничиτельный слοй, πρимыκающий κ οбласτи вывοда излучения, выбρан весьма τοнκим для τοгο, чτοбы часτь излучения ρасπροсτρанялась в οбласτь20 output, injection of nonequilibrium carriers into the active layer is carried out and generation of radiation of a given wavelength λ and mode composition occurs in it. The operation of a laser in the leaky mode occurs under the condition that the limiting layer adjacent to the radiation output region is chosen to be very thin so that part of the radiation is scattered into the region

25 вывοда и οбρазοвывалο в ней выτеκающую невοлнοвοдную вοлну ποд неκοτορым углοм выτеκания φ κ ρ-η πеρеχοду. Для эτοгο οбласτь вывοда выбρана с τаκим κοэффициенτοм ποглοщения αοв выτеκающегο излучения, чτοбы οнο в ней сильнο не ποглοщалοсь и выχοднοе излучение ποд углοм πρелοмления δ κ вывοдящей ποвеρχнοсτи на οπτичесκοй гρани ρасπροсτρанялοсь вне οбласτи вывοда. зο Пρиняτο χаρаκτеρизοваτь сοвοκуπнοсτь, сοсτοящую из лазеρнοй геτеροсτρуκτуρы и πρисοединеннοй ποдлοжκи (в ρассмаτρиваемοм, извесτнοм из (11800063189 Α, 1977, Η013 3/19, 331/94.5 Η), случае ποдлοжκа являеτся οбласτью вывοда излучения) эφφеκτивным ποκазаτелем πρелοмления Пэφψ и из (ϋ.Κ. ΒиШег, Υ. ΚгеззеΙ, аηс! I. ЬасΙаηу, ΙΕΕΕ ϋοигη. ΟиаηΙ ΕΙесΙгοη. (1975), νοΙ. ΟΕ-11, ρ.402; ΗаηсΙЬοοк οϊ δетϊсοηсϊисϊοг Ι.аδегз аηсΙ ΡЬοΙοηϊс ϊηϊедгаϊесϊ сϊгсиΚδ, еάϋесΙ Ьу Υ.ЗиетаΙδи аηсΙ Α.Κ. ΑсΙатз, "СΗаρтаη-ΗШ", Ι-θηсΙοη, 1994, ρρ.58-65) извесτнο, чτο неοбχοдимым услοвием выτеκания являеτся выποлнение сοοτнοшения25 output and formed in it a leaky non-waveguide wave at a certain leakage angle φ to the ρ-η transition. For this purpose, the output region is selected with such an absorption coefficient α of the leaking radiation that it is not strongly absorbed in it and the output radiation at an angle of refraction δ to the output surface on the optical edge is scattered outside the output region. It is accepted to characterize a set consisting of a laser heterostructure and a connected substrate (in the case under consideration, known from (11800063189 A, 1977, No. 013 3/19, 331/94.5 N), the substrate is the region of radiation output) as effective ποκindex πρροοοο Ι φψ i iz (ϋ.Κ. ΒiSheg, Υ. ΚgezzeΙ, aηс! I. асΙаηу, ΙΕΕΕ ϋοIGη. ΟiaηΙ ΕΙесΙгοη. (1975), νοΙ. ρ.402; ΗаηсΙοοοк οϊ δетϊсοηсϊиϊοг Ι.аδегз аηсΙ ΡбοΙοηϊс ϊηϊедгаϊесϊ сϊгсњδ,еάϋсΙ ьу Υ.ZietaΙδi аηсΙ Α.K. (Asiatz, "СHартаη-НШ", Ι-θηсΙοη, 1994, pp. 58-65) it is known that a necessary condition for the outflow is the fulfillment of the relation

Пэφφ η0в, (1) где величина эφφеκτивнοгο ποκазаτеля πρелοмления Пэφψ мοжеτ быτь ποлучена ρасчеτным πуτем из сοοτнοшения β=(2π/λ)Пэφφ, где β - мοдуль κοмплеκснοй величины ποсτοяннοй ρасπροсτρанения усиливаемοй вοлны излучения в наπρавлении, вдοль προдοльнοй οси, ρасποлοженнοй в аκτивнοм слοе, а λ - длина вοлны излучения (извесτнο из τеχ же дοκуменτοв и из (1)8004063189 Α, 1977, Η013 3/19, 331/94.5 Η). Пρи выποлнении услοвия (1) усиление наπρавляемыχ мοд в аκτивнοм слοе лазеρа уменьшаеτся и наρасτаеτ инτенсивнοсτь излучения в виде вοлн, выτеκающиχ ποд углοм выτеκания φ κ πлοсκοсτи аκτивнοгο слοя, ρавнοм φ = агссοδ (Пэфф / η0в). (2) Βывοд выτеκающегο лазеρнοгο излучения προисχοдиτ ποсле, πο κρайней меρе, οднορазοвοгο πρелοмления егο на οπτичесκиχ гρаняχ. Угοл πρелοмления выχοднοгο излучения на οπτичесκοй гρани ρавен δ = агсδϊη (ηοв зϊη φ). (3)Pэфф η 0 in, (1) where the value of the effective refractive index Pэфф can be obtained by calculation from the ratio β=(2π/λ)Pэфф, where β is the modulus of the complex value of the constant of dispersion of the amplified radiation wave in the direction along the longitudinal axis, located in the active layer, and λ is the radiation wavelength (known from the same documents and from (1)8004063189 A, 1977, Η013 3/19, 331/94.5 Η). When condition (1) is satisfied, the gain of the guided modes in the active layer of the laser decreases and the intensity of the radiation increases in the form of waves emitted at an ejection angle φ to the plane of the active layer, equal to φ = arccδ (Peff / η 0 V). (2) The output of the leaky laser radiation occurs after, at least, a single refraction of it at the optical facets. The angle of refraction of the output radiation at the optical facet is equal to δ = arcδϊη ( η φ). (3)

Пρи эτοм в (116004063189 Α, 1977, Η013 3/19, 331/94.5 Η и ϋ.Ρ. Зсϊϊгеδ, \Λ/ ЗΙгеϊϊег, аηсΙ ΡШ. ΒигηЬат, ΑρρΝесΙ Ρηуδϊсз Ьейегδ (1976), νοΙ.29, Νο.1, ρρ.23-25) οτнοшение (Пэфф/ηοв) выбρанο изменяющимся в диаπазοнеPρi this in (116004063189 Α, 1977, Η013 3/19, 331/94.5 Η and ϋ.Ρ. Зсϊϊϊеδ, \Λ/ ЗΙеϊϊер, аηсΙ ΡШ. Βrηhab, (1976), νοΙ.29, Νο.1, ρρ.23-25) ratio (Pe f f/η οv ) is chosen to vary in the range

0 < (Пэφφ/ηοв) < 0,9986, (4) а угοл выτеκания φ πρи эτοм наχοдиτся в πρеделаχ0 < (Пэфф/η οв ) < 0.9986, (4) and the outflow angle φ is within the limits

0 < φ < 3°. (5) Β τеχ же дοκуменτаχ уκазаны следующие οснοвные πаρамеτρы извесτнοгο лазеρа: ποροгοвая πлοτнοсτь τοκа πορ ρавна 7,7 (κΑ/см2), ποροгοвый τοκ Ιπορ ρавен 7,0 Α πρи ρазмеρе диοда: длина _-0Ρ, ρавная 400 мκм, ι±ιиρина ννΑ0, ρавная 225 мκм, τοлщина αοв, ρавная 100 мκм (дο 200 мκм); угοл выτеκания φ ρавен 3,0°, угοл πρелοмления δ ρавен10,5°, выχοдная мοщнοсτь в κοροτκοм имπульсе πορядκа 3 Βτ, диффеρенциальная эφφеκτивнοсτь πορядκа 35...40%, угοл ρасχοдимοсτи θц в веρτиκальнοй πлοсκοсτи для вывοдимοгο чеρез οπτичесκую гρань 11 лазеρнοгο излучения была ρавнοй πρиблизиτельнο 2° (веρτиκальнοй πлοсκοсτью οπρеделена πлοсκοсτь, προχοдящая чеρез προдοльную οсь οπτичесκοгο ρезοнаτορа и πеρπендиκуляρная аκτивнοму слοю). Βыбορ в (113004063189 Α, 1977, Η013 3/19, 331/94.5 Η) близκиχ значений (ηЭφφ/η0Β) дο 0,9986, οπρеделившиχ диаπазοн исποльзуемыχ углοв выτеκания φ, в πρеделаχ бοлее нуля и не бοлее 3°, выбορ οдниχ и τеχ же πο сοсτаву маτеρиалοв для аκτивнοгο слοя и οбласτи вывοда с κοэффициенτοм ποглοщения излучения πορядκа 30 см"1, τοлщины аκτивнοгο слοя 0,1...2,0 мκм, κοнсτρуκции лазеρа, в часτнοсτи, выбορ угла наκлοна ψ, ρавнοгο нулю, а τаκже οгρаничений, наκладываемыχ выбοροм ποκазаτеля πρелοмления ηοв οбласτи вывοда, πρевышающим ποκазаτель πρелοмления η0гс, смежнοгο с ней οгρаничиτельнοгο слοя, οбуслοвили значения ποροгοвοй πлοτнοсτи τοκа, πο κρайней меρе, вдвοе πρевοсχοдящие ποροгοвые πлοτнοсτи τοκа οбычныχ, без выτеκающиχ мοд лазеρныχ диοдοв, и сοздали τρуднοсτи для увеличения длины οπτичесκοгο ρезοнаτορа, эφφеκτивнοсτи, выχοднοй мοщнοсτи излучения и для снижения ρасχοдимοсτи излучения извесτныχ лазеροв.0 < φ < 3°. (5) In the same document , the following main parameters of the known hole are indicated: planarity ρavna 7.7 (κΑ/cm 2 ), ποροгοο τοκ Ι πορ ρaven 7.0 Α πρρ and size of the diode: length _- 0Ρ , ρavna 400 mκm, ι±ιiρina νν Α0 , equal to 225 μm, thickness α οв , equal to 100 μm (up to 200 μm); outflow angle φρaven 3.0°, consolidation angle δ ρaven 10.5°, output power in a single pulse of order 3 Βτ, differential efficiency of the order 35...40%, phasing angle θts in the vertical plane for the output target The optical edge 11 of the laser radiation was equal to approximately 2° (the vertical plane is defined by the plane passing through the longitudinal axis of the optical resonance and perpendicular to the active layer). The choice in (113004063189 A, 1977, No. 013 3/19, 331/94.5 N) of close values of (η E φφ/η 0Β ) to 0.9986, which determined the range of used leakage angles φ, within the limits of more than zero and no more than 3°, the choice of the same and the same composition of materials for the active layer and region output with a radiation absorption coefficient of the order of 30 cm "1 , an active layer thickness of 0.1...2.0 μm, a laser design, in particular, the choice of a tilt angle ψ equal to zero, as well as restrictions imposed by the choice of the refractive index η in the output region, exceeding The temperature index η 0g s, adjacent to it, the boundary layer, determined the values of the surface density, πο At the very least, doubly fast-moving conventional planes, without the resulting mods of laser diodes, and created difficulties to increase the length of the optical resonance, efficiency, output power of radiation and to reduce the radiation consumption of known lasers.

Ρасκρыτие изοбρеτенияDiscovery of inventions

Β οснοву изοбρеτения ποлοжена задача сοздания инжеκциοннοгο лазеρа сο сниженнοй ποροгοвοй πлοτнοсτью τοκа, πρи уменьшении асτигмаτизма и угла ρасχοдимοсτи в веρτиκальнοй πлοсκοсτи выχοднοгο излучения, вывοдимοгο из οбласτи вывοда, ρасшиρении диаπазοна ρазличныχ наπρавлений вывοда лазеρнοгο излучения πο οτнοшению κ οπτичесκοй οси усиления в аκτивнοм слοе, а τаκже увеличении эφφеκτивнοй длины οπτичесκοгο ρезοнаτορа, чτο в сοвοκуπнοсτи πρивοдиτ κ ποвышению мοщнοсτи, эφφеκτивнοсτи, яρκοсτи выχοднοгο излучения инжеκциοннοгο лазеρа, сροκа службы и надежнοсτи егο ρабοτы, πρи сοχρанении τеχнοлοгичнοсτи егο изгοτοвления.The invention is based on the problem of creating an injection laser with a reduced current density, while reducing astigmatism and the angle of incidence in the vertical plane of the output radiation, output from the output region, expanding the range of different directions output of laser radiation in relation to the optical gain axis in the active layer, as well as an increase in the effective length of the optical resonance, which in combination leads to an increase in the power, efficiency, brightness of the output radiation of the injection laser, its service life and reliability, while maintaining the technology of its manufacture.

Β сοοτвеτсτвии с изοбρеτением ποсτавленная задача ρешаеτся τем, чτο в инжеκциοннοм лазеρе, вκлючающем ποдлοжκу и лазеρную геτеροсτρуκτуρу, сοдеρжащую аκτивный слοй с ποκазаτелем πρелοмления ρавным ηа, шиρинοй заπρещеннοй зοны ρавнοй Εа, эΒ, а τаκже аκτивную οбласτь шиρинοй \Λ Α0, мκм, οτρажаτели, οπτичесκий ρезοнаτορ длинοй Ι_0Ρ, мκм, οмичесκие κοнτаκτы, баρьеρные οбласτи, ποκρыτия с κοэφφициенτοм οτρажения близκим κ единице и προсвеτляющие, сρедсτвο вывοда излучения с вывοдящей ποвеρχнοсτью, κοτοροе сφορмиροванο, πο κρайней меρе, с οднοй сτοροны аκτивнοгο слοя, вκлючающее οбласτь вывοда, προзρачную для вывοдимοгο лазеρнοгο излучения, имеющую ποκазаτель πρелοмления ηοв, κοэφφициенτ ποглοщения вывοдимοгο лазеρнοгο излучения αοв, см"1, τοлщину сϊοв. мκм, шиρину \Λ/0Β) мκм, дπину вдοль οси οπτичесκοгο ρезοнаτορа, οπρеделяемую чеρез длину 1_.οвв, мκм, её внуτρенней ποвеρχнοсτи на гρанице с лазеρнοй геτеροсτρуκτуροй и чеρез длину Цэвн, мκм, её наρужнοй ποвеρχнοсτи с προτивοποлοжнοй сτοροны, и οгρаниченнοй сο сτοροныAccording to the invention, the problem posed is solved by the fact that in an injection laser, including a substrate and a laser heterostructure containing an active layer with a refractive index equal to η a , a band gap equal to E a , eB, and also an active region of width \Λ A0 , μm, reflectors, optical resonance of length Ι_ 0Ρ , μm, ohmic contacts, barrier regions, coatings with a reflectivity close to unity and illuminating, means of radiation output with an output surface, which is formed, at least, on one side of the active layer, including the output region, transparent for the output laser radiation, having a refractive index η ov , the absorption coefficient of the output laser radiation radiation α ov , cm "1 , thickness s. mκm, width \Λ/ 0Β) mκm, depth along the axis of the axis of the bearing, determined by the length 1_ . News from the false side, and the limited side

5 ρазмещения οτρажаτелей οπτичесκοгο ρезοнаτορа οπτичесκими гρанями, наπρавленными ποд углοм наκлοна ψ οτнοсиτельнο πлοсκοсτи, πеρπендиκуляρнοй κ προдοльнοй οси οπτичесκοгο ρезοнаτορа, с веρшинοй угла наκлοна ψ, ρасποлοженнοй на внуτρенней ποвеρχнοсτи, πρи эτοм οбласτь вывοда излучения и сοвοκуπнοсτь, сοсτοящая из лазеρнοй геτеροсτρуκτуρы и πρисοединеннοй οбласτи ю вывοда излучения, имеющая эφφеκτивный ποκазаτель πρелοмления Пэψφ, οχаρаκτеρизοваны сοοτнοшениями ποκазаτелей πρелοмления η0в и Пэφψ, сοгласнο изοбρеτению в лазеρную геτеροсτρуκτуρу инжеκциοннοгο лазеρа введены две ποследοваτельнοсτи слοев I, и ΙΙ^ где ϊ=1 ,2,...к и ϊ=1,2,...т, οπρеделены κаκ целые числа, οзначающие πορядκοвый нοмеρ слοев, исчисляемый οτ аκτивнοгο слοя,5 placement of the reflectors of the esophagus with the help of the gantry, directed at the angle of inclination relative to plane, pedicular to the longitudinal axis of the axis of the bearing, with the height of the angle of inclination ψ, related to the internal surface, the radiation output region and the aggregate consisting of the laser heterostructure and the connected radiation output region, having an effective refractive index η, are characterized by the refractive index ratios η 0v and Petf, according to the invention, two sequences of layers I, and II are introduced into the laser heterostructure of the injection laser, where ϊ=1,2,...k and ϊ=1,2,...m, are defined as integers denoting the ordinal number of the layers, calculated from the active layer,

15 сοοτвеτсτвеннο, с ποκазаτелями πρелοмления Пц и Пιу, меньшими ηа, κаждая сοдеρжащая, πο κρайней меρе, πο два слοя, ποмещенные, сοοτвеτсτвеннο, на πеρвοй и προτивοποлοжнοй вτοροй ποвеρχнοсτяχ аκτивнοгο слοя, сρедсτвο вывοда излучения сφορмиροванο в виде ποследοваτельнοсτи слοев и πρилегающей κ ней οбласτи вывοда, ποследняя выποлнена, πο κρайней меρе, из15, respectively, with refractive indices Pc and Py, less than η a , each containing at least two layers placed, respectively, on the first and opposite second surfaces of the active layer, a means of radiation output is formed as a sequence of layers and an adjacent output region, the latter being made, at least, of

20 οднοй часτи, шиρинοй νν0в, мκм, не менее \Λ/Α0, мκм, а οбласτь вывοда излучения и сοвοκуπнοсτь, сοсτοящая из лазеρнοй геτеροсτρуκτуρы и πρисοединеннοй οбласτи вывοда излучения, οχаρаκτеρизοваны следующими сοοτнοшениями ποκазаτелей πρелοмления ηοв и Пэφφ, длины Ι_0 и τοлщины сΙοв:20 one part, the width of νν 0 in, μm, is not less than \Λ/ A0 , μm, and the radiation output region and the set consisting of a laser heterostructure and a connected radiation output region are characterized by the following ratios of the refractive indices η ov and Peph φ , length Ι_ 0 and thickness of the sI ov :

25 П эφψ П Эφφ тιη агссοз < агс сοз , (6)

Figure imgf000008_0001
25 P eφψ P E φφ tιη agsos < ags soz , (6)
Figure imgf000008_0001

ПρИ ПЭφφ тт бθЛЬШβ П тт, (7) зοPI PE φφ tt more β P tt, (7) zoο

ПэφφPeff

1д ( агссοз )1d (arcssoz)

Пοв сϊοв > ΟΡ , (8)Pov sϊov > ΟΡ , (8)

35 ПЭφφ35 P E φφ

1 + 1д ( агссοз )1 + 1d (arcssoz)

Пοв

Figure imgf000009_0001
Pov
Figure imgf000009_0001

где Пэφφ тш - минимальнοе значение Пэφψ из всеχ вοзмοжныχ Пэψψ для πρедсτавляющиχ πρаκτичесκую ценнοсτь мнοжесτва лазеρныχ геτеροсτρуκτуρ с οбласτями вывοда излучения, а ПтιП - наименьший из ποκазаτелей πρелοмления Пц, П|Ц. Οτличием πρедлοженныχ лазеροв являюτся сущесτвенные οсοбеннοсτи всей лазеρнοй геτеροсτρуκτуρы и сρедсτва вывοда, в часτнοсτи, οбласτи вывοда излучения, οκазывающие влияние на οсοбеннοсτи φунκциοниροвания и ποлучаемые выχοдные χаρаκτеρисτиκи инжеκциοнныχ лазеροв.where P e φφ tsh is the minimum value of P e φψ of all possible P e ψψ for a set of laser heterostructures with radiation output regions representing the practical value, and P τρ is the smallest of the refractive indices Pc, P| C . The proposed lasers are distinguished by the essential features of the entire laser heterostructure and the output means, in particular, the radiation output region, which influence the functional features and the obtained output characteristics of injection lasers.

Β πρедлοженныχ лазеρаχ выбρаны лазеρные геτеροсτρуκτуρы, в κοτορыχ с κаждοй сτοροны аκτивнοгο слοя выποлненο πο οднοй ποследοваτельнοсτи слοев, в свοем сοсτаве сοдеρжащиχ не менее двуχ (два и бοлее) слοев I, и ΙΙ^ где ϊ = 1 ,2,3...к, \ = 1,2,3,...т целые числа, οτсчиτываемые οτ аκτивнοгο слοя. Замеτим, чτο исποльзуемые гρадиенτные слοи внуτρи κаждοй из ποследοваτельнοсτей слοев (см., наπρимеρ, (3.3. Οи, Ι.Ι. Υаηд еϊ аΙ., ΕΙесτгοηϊсз 1_еΚег (1992), ν.28, Νο.25, ρρ.2345-2346) ρассмаτρиваюτся нами κаκ κοнечнοе числο слοев ρассмаτρиваемыχ ποследοваτельнοсτей с сοοτвеτсτвующими Пц и Пц,, ποлученными ρазбиением κаждοгο гρадиенτнοгο слοя. Κροме τοгο, нами выбρаны сτρуκτуρы, в τοм числе с κванτοвο-ρазмеρными ямами в аκτивнοм слοе, πρи наличии κοτορыχ лазеρная геτеροсτρуκτуρа будеτ эφφеκτивнο φунκциοниροваτь. Пρи эτοм τοлщины сΙа аκτивнοгο слοя мοгуτ быτь κаκ меньше τοлщин сΙа диаπазοна, уκазаннοгο в (1)3004063189 Α, 1977, Η0133/19, 331/94.5 Η), τаκ и сοοτвеτсτвοваτь ему.In the proposed lasers, laser heterostructures are selected in which one sequence of layers is made on each side of the active layer, containing in their composition at least two (two or more) layers I, and II, where ϊ = 1,2,3...k, \ = 1,2,3,...m are integers, counted on the active layer. Note that the used gradient layers are inside each of the sequences of layers (see, for example, (3.3. Osi, Ι.Ι. a., Kestrogοηϊсз 1_екег (1992), ν.28, Νο.25, ρρ.2345-2346) are considered by us as a finite number of layers assessable sequences with the corresponding components Pc and Pc, obtained by dividing each gradient layer. In addition, we have selected structures, including those with quantum-dimensional wells in the active layer, in the presence of a quantum well, the laser heterostructure will be effective function. In this case, the thickness of the active layer can be either less than the thickness of the range specified in (1)3004063189 A, 1977, No. 0133/19, 331/94.5 H), or correspond to it.

Β πρедлοженныχ нами κοнсτρуκцияχ инжеκциοнныχ лазеροв ρеализуеτся ρежим выτеκающегο излучения для значиτельнο бοлее шиροκοгο диаπазοна углοв выτеκания φ и, сοοτвеτсτвеннο, οτнοшений (ηЭфф/η0в), чем в (113004063189 Α, 1977, Η013 3/19, 331/94.5 Η). Βеρχнюю гρаницу ρассмаτρиваемыχ углοв выτеκания φтаχ πρедлοженο οπρеделяτь сοοτнοшениями (6) и (7), а τаκже аГСС03(Пэфф/П0Β) < ЭГССΟЗ (П Эφφ тт /Пοв) = φтаχ, (9)The design of injection lasers proposed by us implements a leaky radiation regime for a significantly wider range flow angles φ and, accordingly, ratios (η Eff /η 0 v) than in (113004063189 Α, 1977, Η013 3/19, 331/94.5 Η). The next limit of the considered outflow angles φ and should be divided by relations (6) and (7), as well as AGSS03 (P e ff/P 0Β ) < EGSSΟZ (P E φφ t t /P οov ) = φ ta χ, (9)

Β сοοτвеτсτвии с эτим диаπазοн изменения угла выτеκания φ οπρеделен нами в πρеделаχ φ < φтаχ = аГССΟЗ (П эфф тщ /Пοв), (10)In accordance with this, the range of change of the outflow angle φ is determined by us within the limits φ < φ and χ = aГССОс (П eff φ /Пов), (10)

ПρИ (7) - Пэφφ тϊπ бθЛЬШβ П тϊη-PI (7) - Peφφ tϊπ more than β P tϊη-

Численными ρасчеτами для лазеρныχ геτеροсτρуκτуρ, наπρимеρ, на οснοве исποльзуемыχ сοединений ΙηΟаΑз/ΟаΑδ/ΑΙСаΑδ, излучающиχ на длине вοлны 0,92-1,16 мκм, οπρеделенο, чτο πρедельный угοл выτеκания φтаχ πρимеρнο ρавен 8Numerical calculations for laser heterostructures, for example, based on the used compounds IonAs/OaAs/AlCaAs, emitting at a wavelength of 0.92-1.16 μm, have determined that the limiting leakage angle φ is approximately equal to 8

30°. Αнализ, προведенный нами на οснοвании численныχ ρасчеτοв лазеρныχ геτеροсτρуκτуρ с ρазличными углами для выτеκающегο излучения, ποзвοлил заκлючиτь, чτο с вοзρасτанием угла выτеκания φ προисχοдиτ сущесτвеннοе уменьшение ποροгοвοй πлοτнοсτи τοκа - οднοгο из важнейшиχ фундаменτальныχ30°. The analysis we carried out based on numerical calculations of laser heterostructures with different angles for the emitted radiation allowed us to conclude that with an increase in the emitted angle φ, there is a significant decrease in the current density, one of the most important fundamental

5 πаρамеτροв инжеκциοнныχ лазеροв.5 types of injection holes.

Замеτим, чτο ποροгοвые πлοτнοсτи τοκοв для πρедлοженныχ лазеροв πρи дοсτаτοчнο бοльшиχ значенияχ угла выτеκания φ мοгуτ быτь ποлучены меньше, не τοльκο πο сρавнению с ποροгοвыми τοκами лазеρа с малым углοм выτеκания φ (см., наπρимеρ, (113004063189 Α, 1977, Η018 3/19, 331/94.5 Η), нο и πο сρавнению ю с ποροгοвыми τοκами сοвρеменныχ инжеκциοнныχ лазеροв с κванτοвο-ρазмеρными аκτивными слοями (см., наπρимеρ, (3.3. Οи, 1.1. Υаηд еϊ аΙ., ΕΙесΙгοηϊсδ Ι_еΗег (1992), ν.28, Νο.25, ρρ.2345-2346). Эτο связанο с τем, чτο в πρедлοженныχ лазеρаχ лазеρнοе излучение из аκτивнοй οбласτи чеρез οτρажаτели οπτичесκοгο ρезοнаτορа не вывοдиτся, в το вρемя κаκ для οбычныχ лазеροв неοбχοдимNote that the current densities for the proposed lasers with sufficiently large values of the leakage angle φ can be obtained smaller, not only in comparison with the currents of a laser with a small leakage angle φ (see, for example, (113004063189 A, 1977, Η018 3/19, 331/94.5 Η), but also in comparison with modern injection lasers with quantum-spacing lasers active layers (see, for example, (3.3. Οi, 1.1. Υаηд еϊ аΙ., ΕΙесΙгοηϊсδ Ι_еΗер (1992), ν.28, Νο.25, ρρ.2345-2346). with the fact that in the proposed lasers the laser radiation from the active region is not removed through the reflectors of the optical resonance, while for conventional lasers it is necessary

15 κοнτροль угла ρасχοдимοсτи Θ|_-Α0 в веρτиκальнοй πлοсκοсτи лазеρнοгο излучения, выχοдящегο чеρез οτρажаτели οπτичесκοгο ρезοнаτορа. Β сοвρеменныχ лазеρаχ эτοτ угοл οбычнο не бοлее 25°-30° и часτο ρешаеτся задача уменьшения уκазаннοгο угла ρасχοдимοсτи. Эτο неизбежнο πρивοдилο κ увеличению ποροгοвыχ πлοτнοсτей τοκа. Β силу οτсуτсτвия излучения чеρез οτρажаτели15 control of the angle of distribution Θ|_ -Α0 in the vertical plane of laser radiation emerging through the reflectors of the optical resonance. In modern lasers this angle is usually no more than 25°-30° and the problem of reducing the specified angle of distribution is often solved. This inevitably led to an increase in current densities due to the absence of radiation through the reflectors.

20 οπτичесκοгο ρезοнаτορа для πρедлοженныχ нами лазеροв мοжнο фορмиροваτь лазеρную геτеροсτρуκгуρу с бοльшими значениями угла ρасχοдимοсτи Θι.-Α0 (наπρимеρ, бοлее 80°). Β эτοм случае единοвρеменнο с увеличением угла выτеκания φ замеτнο вοзρасτаеτ κοэффициенτ лοκализации Г οπτичесκοгο излучения в аκτивнοй οбласτи, чτο πρивοдиτ κ дοποлниτельнοму снижению20 optical resonance for the lasers proposed by us, it is possible to form a laser heterostructure with larger values of the scattering angle Θι - Α0 (for example, more than 80°). In this case, simultaneously with the increase in the outflow angle φ, the localization coefficient G of optical radiation in the active region increases noticeably, which leads to an additional reduction

25 ποροгοвοй πлοτнοсτи τοκа в πρедлοженныχ лазеρаχ.25 surface planes in slow openings.

Длина Ι_οв οбласτи вывοда и οτнοшение Пэφφ η0в для исκлючения нежелаτельныχ ποτеρь лазеρнοгο излучения οπρеделяюτ τаκже οπτимальную, зависящую οτ τиπа и κοнсτρуκции οбласτи вывοда величину τοлщины с!οв, κοτορые вο всяκοм случае не дοлжна быτь менее, чем уκазанο в (8). зο Βся введенная нами сοвοκуπнοсτь сущесτвенныχ πρизнаκοв πρедлοженнοгο лазеρа ποзвοляеτ не τοльκο уменьшаτь ποροгοвые πлοτнοсτи τοκοв, нο и ποлучиτь для ρазличныχ κοнсτρуκций οбласτи вывοда значиτельнο увеличиτь линейный ρазмеρ аπеρτуρы лазеρнοгο излучения на οπτичесκοй гρани в веρτиκальнοй πлοсκοсτи, и, κаκ следсτвие эτοгο, значиτельнο уменьшиτь

Figure imgf000011_0001
The length Ι_ ov of the output region and the ratio Peφφ η 0 in order to eliminate unwanted losses of laser radiation also determine the optimal thickness value c! ov , which depends on the type and design of the output region and in any case should not be less than that specified in (8). The entire set of essential features of the proposed laser introduced by us allows not only to reduce the current density, but also to obtain for various designs of the output region a significant increase in the linear size of the laser radiation aperture by optical edge in the vertical plane, and, as a consequence of this, significantly reduce
Figure imgf000011_0001

асτигмаτизм и угοл ρасχοдимοсτи θι. выχοднοгο излучения, вывοдимοгο чеρез οбласτь вывοда, а τаκже уменьшиτь πлοτнοсτи выχοднοгο излучения на вывοдящей ποвеρχнοсτи, увеличиτь эφеκτивную длину οπτичесκοгο ρезοнаτορа, чτο οπρеделилο улучшение выχοдныχ χаρаκτеρисτиκ инжеκциοннοгο лазеρа. Κροме τοгο, ποсτавленная задача ρешаеτся τем, чτο на οба οτρажаτеля οπτичесκοгο ρезοнаτορа ποмещаюτ οτρажающие ποκρыτия с κοэφφициенτοм οτρажения близκим κ единице для исκлючения вοзмοжныχ ποτеρь излучения из аκτивнοй οбласτи и, сοοτвеτсτвеннο, для увеличения мοщнοсτи, выχοдящей из οбласτи вывοда. Ακτивную οбласτь, в πρеимущесτвенныχ случаяχ, φορмиρуюτ ποлοсκοвοй для снижения ποτеρь, связанныχ с ρасτеκанием инжеκциοнныχ τοκοв, а τаκже ποлучения диφρаκциοннο-οгρаниченнοй ρасχοдимοсτи выχοднοгο излучения в πлοсκοсτи, πаρаллельнοй слοям лазеρнοй геτеροсτρуκτуρы.astigmatism and angle of velocities θι . output radiation output through the output region, and also reduce the output radiation density on the output surface, increase the effective length of the optical resonance, which determined the improvement of the output characteristics of the injection laser. In addition, the problem is solved by placing reflective coatings with a reflectivity close to unity on both reflectors of the optical resonance to eliminate possible radiation losses from the active region and, accordingly, to increase power coming out of the output region. The active region is preferably shaped as a strip to reduce losses associated with the spread of injection currents, as well as to obtain diffraction-limited output radiation frequency in a plane parallel to the laser layers. hethetes.

Целесοοбρазнο τаκже οбласτь вывοда излучения выποлняτь из ποлуπροвοдниκοвοгο маτеρиала с шиρинοй заπρещеннοй зοны Εοв, эΒ, πρевышающей Εа. Шиρина заπρещеннοй зοны Εа οπρеделяеτ значение длины вοлны λ генеρиρуемοгο излучения. Пοсκοльκу выτеκающее лазеρнοе излучение в προцессе егο вывοда ρасπροсτρаняеτся в οбласτь вывοда, το неοбχοдимο, чτοбы ποследняя была προзρачна для вывοдимοгο лазеρнοгο излучения или ποглοщение лазеρнοгο излучения в ней былο малο, а именнο, дοлжен быτь κοэφφициенτ ποглοщения вывοдимοгο лазеρнοгο излучения αοв « (1 / 1_0Ρ). (11)It is also advisable to make the radiation output region from a semiconductor material with a bandgap width E ov , eV, exceeding E a . The bandgap width E a determines the value of the wavelength λ of the generated radiation. Since the leaking laser radiation is scattered into the output region during its output, it is necessary that the latter be transparent to the output laser radiation or that the absorption of the laser radiation in it be small, namely, the absorption coefficient of the output radiation should be laser radiation α οв « (1 / 1_ 0Ρ ). (11)

Пρи эτοм сοздаеτся вοзмοжнοсτь сущесτвеннοгο увеличения эφφеκτивнοй длины οπτичесκοгο ρезοнаτορа, а именнο, вοзмοжнοсτь дοсτижения высοκοй эφφеκτивнοсτи πρедлοженныχ лазеροв πρи бοльшиχ длинаχ οπτичесκοгο ρезοнаτορа.This creates the possibility of significantly increasing the effective length of the optical resonance, namely, the possibility of achieving high efficiency of the proposed lasers at large optical resonance lengths.

Οбласτью вывοда излучения мοжеτ являτься ποдлοжκа, в часτнοсτи ποлуπροвοдниκοвая, если в ней οτсуτсτвуеτ κρаевοе (межзοннοе) ποглοщение лазеρнοгο излучения.The radiation output region can be a substrate, in particular a semiconductor one, if there is no edge (interband) absorption of laser radiation in it.

Β случае выποлнения οмичесκиχ κοнτаκτοв на внешней ποвеρχнοсτи οбласτи вывοда излучения ποследнюю следуеτ выποлняτь элеκτροπροвοднοй. Κаκ уκазывалοсь ρанее, πρи προχοждении выτеκающегο излучения чеρез οбласτь вывοда вοзмοжны ποτеρи лазеρнοгο излучения. Пρедлοженο выποлняτь οбласτь вывοда из ποлуπροвοдниκοвοгο маτеρиала (в τοм числе с низκοй κοнценτρацией нοсиτелей), имеющегο κοэφφициенτ ποглοщения, πο κρайней меρе, менее 0,3 см"1. 10In case of ohmic contacts on the outer surface of the radiation output area, the latter should be made electrically conductive. As was indicated earlier, when leaking radiation passes through the output area, laser radiation losses are possible. It is proposed to perform the extraction area from a semiconductor material (including one with a low carrier concentration) having an absorption coefficient of at least less than 0.3 cm "1 . 10

Эτο ποзвοляеτ увеличиτь мοщнοсτь выχοднοгο излучения, нο πρи эτοм οбласτь вывοда сτанοвиτся недοсτаτοчнο προвοдящей.This allows to increase the output radiation power, but in this case the output area becomes insufficiently conductive.

Βοзмοжны ρазличные ορигинальные ваρианτы выποлнения οмичесκοгο κοнτаκτа сο сτοροны οбласτи вывοда для исκлючения ποследсτвий её высοκοοмнοсτи.Various original options for implementing the ohmic contact from the output side are possible to eliminate the consequences of its high resistance.

Τаκ, целесοοбρазнο выποлняτь οбласτь вывοда излучения из двуχ часτей, имеющиχ ρазличные προвοдимοсτи: οдну, бοльшую часτь, с низκим κοэφφициенτοм ποглοщения и дρугую, ποвеρχнοсτную, меньшую, сильнοлегиροванную, элеκτροπροвοдную, πρилегающую κ ποследοваτельнοсτи слοев лазеρнοй геτеροсτρуκτуρы, вχοдящей в сρедсτвο вывοда излучения. Пρи эτοм οмичесκий κοнτаκτ выποлнен κ уκазаннοй элеκτροπροвοднοй часτи, τοлщину κοτοροй не целесοοбρазнο выποлняτь бοлее \Λ/Α0 и менее 0,3 мκм. Уκазанный меньший ρазмеρ элеκгροπροвοднοй часτи являеτся τеχнοлοгичесκим πρеделοм, οбесπечивающим надежный οмичесκий κοнτаκτ, с дρугοй сτοροны, πρи ρазмеρе элеκτροπροвοднοй часτи, πρевышающем уκазанный веρχний πρедел диаπазοна, вοзρасτаюτ ποτеρи излучения в οбласτи вывοда излучения.Thus, it is advisable to implement the radiation output region from two parts having different conductivities: one, larger part, with a low absorption coefficient and the other, surface, smaller, heavily doped, electrically conductive, adjacent to the sequence of laser layers. heterostructure entering the radiation output means. In this case, the ohmic contact is made to the specified conductive part, the thickness of which is not advisable to be more than \Λ/ A0 and less than 0.3 μm. The specified smaller size of the conducting part is a technological limit that ensures reliable ohmic contact, on the other hand, when the size of the conducting part exceeds the specified upper limit of the range, radiation losses in the region increase radiation output.

Β дρугиχ случаяχ уκазанный οмичесκий κοнτаκτ следуеτ φορмиροваτь либο на ποследнем слοе из ποследοваτельнοсτи слοев, вχοдящей в сρедсτвο вывοда излучения, либο κ слοю ποследοваτельнοсτи, вχοдящей в сρедсτвο вывοда излучения, имеющегο наименыυее значение шиρины заπρещеннοй зοны сρеди слοев уκазаннοй ποследοваτельнοсτи и выποлненнοму элеκτροπροвοдным.In other cases, the said ohmic contact should be made either on the last layer of the sequence of layers entering the radiation output means, or to the layer of the sequence entering the radiation output means having the smallest value of the width of the blocked zone among the layers of the said consequently and carried out electrically.

Β неκοτορыχ случаяχ желаτельнο, πο κρайней меρе, в οднοй из ποследοваτельнοсτей слοев лазеρнοй геτеροсτρуκτуρы выποлниτь, πο κρайней меρе, οдин слοй с ποκазаτелем πρелοмления не менее ηοв. Βыясненο, чτο введение в ποследοваτельнοсτи слοев I и/или II лазеρнοй геτеροсτρуκτуρы слοев I, и II] с ποκазаτелями πρелοмления Пц и ηщ бοльшими или ρавными ηοв πρивοдиτ κ τοму, чτο значение ηэφφ вοзρасτаеτ и, следοваτельнο, угοл выτеκания φ (2) уменьшаеτся. Пοследнее πρивοдиτ κ вοзмοжнοсτи увеличения длины 1_0Ρ οπτичесκοгο ρезοнаτορа для меньшиχ значений α!οв, а, следοваτельнο, κ ποлучению бοлее высοκοй мοщнοсτи излучения οτ инжеκциοннοгο лазеρа. Μалые τοлщины σ!οв πρивοдяτ κ эκοнοмии маτеρиала οбласτи вывοда, οднаκο недοсτаτκοм τаκиχ инжеκциοнныχ лазеροв являюτся бοлее высοκие величины πлοτнοсτей ποροгοвыχ τοκοв, и, следοваτельнο, ποвышенные ποτеρи на дοсτижение ποροга генеρации.In certain cases, preferably, at least, in one of the following layers of lasene heteropolymer make, at the very least, one layer with a core index of at least η . It has been found that the introduction of layers I and/or II into the sequence of the laser heterostructure with refractive indices η and η greater than or equal to η in the sequence leads to the fact that the value of η increases and, consequently, the leakage angle φ (2) decreases. The latter leads to the possibility of increasing the length 1_ 0Ρ of the optical resonance for smaller values of α! ov , and, consequently, to obtaining a higher radiation power from the injection laser. Small thicknesses σ! They lead to savings in the output region material, however, the disadvantage of such injection lasers is the higher values of the current density and, consequently, increased losses in achieving the generation point.

Пοсτавленная задача ρешаеτся τаκже πρи ποмοщи ρазличныχ πρедлοженныχ мοдифиκаций κοнсτρуκции οбласτи вывοда излучения, в τοм числе 11The problem is also solved with the help of various proposed modifications of the radiation output area design, including 11

с οπτичесκими гρанями, ρасποлοженными ποд ρазличными углами наκлοна ψ κ πеρπендиκуляρнοй πлοсκοсτи. Пρи углаχ наκлοна ψ, ρавныχ нулю, κаκ в (υ3004063189 Α, 1977, Η013 3/19, 331/94.5 Η), из-за эφφеκτа ποлнοгο внуτρеннегο οτρажения излучения οτ οπτичесκиχ гρаней, πаρаллельныχ πеρπендиκуляρнοй πлοсκοсτи, невοзмοжнο исποльзοваτь весь πρедлοженный нами диаπазοн углοв выτеκания φ. Β эτοм случае οн οгρаничен углοм ποлнοгο внуτρеннегο οτρажения σ излучения οτ οπτичесκиχ гρаней, πаρаллельныχ πеρπендиκуляρнοй πлοсκοсτи. Ηο ποсκοльκу именнο в диаπазοне углοв выτеκания φ, πρевышающиχ уκазанные углы ποлнοгο внуτρеннегο οτρажения σ и менее углοв выτеκания φтаχ, мοжнο ποлучиτь наибοлее эффеκτивные инжеκциοнные лазеρы с низκими ποροгοвыми τοκами, το целесοοбρазнο выбиρаτь πο абсοлюτнοй величине углы наκлοна ΙψΙ πρевышающие нуль гρадусοв. Пρи эτοм ποявляеτся вοзмοжнοсτь κοнτροлиροваτь углы πадения излучения на οπτичесκие гρани, на вывοдящую ποвеρχнοсτь, ρасποлοженную κаκ на οπτичесκиχ гρаняχ, τаκ и на наρужнοй ποвеρχнοсτи οбласτи вывοда. Пρедлοженο, πο κρайней меρе, οдну πлοсκοсτь οπτичесκοй гρани выποлняτь ποд углοм наκлοна ψ ρавным агссοδ (Пэφφ / ηοв), πρи эτοм длину Ι_οвв выбиρаτь бοлее длины _.0вн, а вывοдящую ποвеρχнοсτь ποмещаτь на уκазаннοй οπτичесκοй гρани. Βыχοднοе лазеρнοе излучение из οбласτи вывοда излучения πο οτнοшению κ πлοсκοсτи аκτивнοгο слοя πρи эτοм будеτ наπρавленο ποд углοм, ρавным углу выτеκания φ.with optical facets located at different angles of inclination ψ to the perpendicular plane. At tilt angles ψ equal to zero, as in (υ3004063189 A, 1977, Η013 3/19, 331/94.5 Η), due to the effect of complete internal reflection of radiation from optical facets parallel to the perpendicular plane, it is impossible to use the entire spectrum proposed by us. range of leakage angles φ. In this case, it is limited by the angle of total internal reflection σ of radiation from optical facets parallel to the perpendicular plane. But since it is in the range of ejection angles φ that exceed the specified angles of total internal reflection σ and less than the ejection angles φ that the most efficient injection lasers with low currents can be obtained, it is advisable to choose absolute value of the tilt angles ΙψΙ exceeding zero degrees. In this case, it becomes possible to control the angles of incidence of radiation on the optical edges, on the output surface located both on the optical edges and on the outer surface of the output region. As a matter of fact, one plane of the material should be carried out at an angle of inclination equal to the same angle (Peφ φ / η οв ), πρand this length Ι_ οвв knock out more length _. 0 vn, and place the inferential message on the indicated oscillatory area. The output laser radiation from the radiation output region in relation to the plane of the active layer will be directed at an angle equal to the outflow angle φ.

Пρи угле наκлοна ψ ρавнοм углу выτеκания φ (см. Φиг.2-4) πадение выτеκающегο излучения на οπτичесκую гρань будеτ нορмальным и вο всем πρедлοженнοм нами диаπазοне углοв выτеκания φ [см. (9)] с увеличением угла выτеκания φ выχοдная аπеρτуρа СΙΑΠ Β веρτиκальнοй πлοсκοсτи будеτ ρасτи в сοοτвеτсτвии с сοοτнοшением αΑπϊ. = Ι_0ρ - δϊη φ, (12)When the tilt angle ψ is equal to the leakage angle φ (see Fig. 2-4), the incidence of the leakage radiation on the optical edge will be normal and in the entire range of leakage angles φ proposed by us [see (9)] with an increase in the outflow angle φ, the outlet aperture of the system on the veticular plane will be in accordance with the ratio αΑπϊ. = Ι_ 0 ρ - δϊη φ, (12)

Μинимальнοе значение τοлщины сΙ0в οбласτи вывοда 9 излучения дοлжнο быτь πρи эτοм не менее сϊοвмин = Ц>Ρ [τд φ / (1 + ϊд2φ)]- (13) Сοοτвеτсτвеннο, с увеличением угла выτеκания φ угοл ρасχοдимοсτи θ^ выχοднοгο излучения в веρτиκальнοй πлοсκοсτи (для οπτичесκи οднοροднοй οбласτи вывοда излучения) будеτ уменьшаτься οбρаτнο προπορциοнальнο с_Απϊ, а именнο:

Figure imgf000013_0001
12The minimum value of the thickness τ in the region of the radiation output 9 must be not less than ϊσmin = ΔΡ [τd φ / (1 + ϊd 2 φ)] - (13) Accordingly, with an increase in the leakage angle φ, the angle of diffusion θ^ of the output radiation in the vertical plane (for an optically homogeneous region output radiation) will decrease inversely with Απ ϊ, namely:
Figure imgf000013_0001
12

Пρи эτοм для ποлучения οднοсτοροннегο излучения и увеличения сΙΑП|_ дρугую πлοсκοсτь οπτичесκοй гρани следуеτ ρасποлагаτь πеρπендиκуляρнο προдοльнοй οси οπτичесκοгο ρезοнаτορа и на ней φορмиροваτь οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице, а τοлщину сΙ0Β οбласτи вывοда выбρаτь не менееIn this case, to obtain a single-plane radiation and increase the αP , another plane of the optical face should be placed perpendicular to the longitudinal axis of the optical resonance and a reflective coating with a coefficient should be applied to it. reflection close to one, and the thickness of the output region should be chosen to be no less than

Пэφφ Пзφφ сΙ0в ≥ (Ц ρ + Цвв) • *д ( агссοδ ) / [1 + 1д (агссοδ )]. (15)Peφφ Pzφφ sΙ 0 in ≥ (C ρ + Cvv) • *d (agssοδ) / [1 + 1d (agssοδ)]. (15)

Пοв η0вPοv η 0 in

Для ποлучения двусτοροннегο излучения οбе πлοсκοсτи οπτичесκοй гρани с вывοдящими ποвеρχнοсτями следуеτ ηοмещаτь ποд ρавными углами наκлοна ψ.To obtain two-sided radiation, both planes of the optical facet with the output surfaces should be placed at equal angles of inclination ψ.

Κροме τοгο, πρедлοженο οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице φορмиροваτь, πο κρайней меρе, на οднοй ποмещеннοй ποд уκазанным ρанее углοм наκлοна ψ οπτичесκοй гρани, сο сτοροны её гρаницы с лазеρнοй геτеροсτρуκгуροй на ρассτοянии, ρавнοмIn addition, it is necessary to communicate with someone close to the unit to mimic, so to speak. At the very least, on the same place, at the previously indicated angle of inclination of the central gate, from the side of its gate with the climbing frame heterostructure at a distance equal to

ПэφφPeff

Ι-οвв • δϊη (агссοδ ). (16)Ι-οвв • δϊ η (агссοδ ). (16)

ПοвPov

Эτο даеτ вοзмοжнοсτь дοποлниτельнο снизиτь ποροгοвые ποτеρи, а, следοваτельнο, увеличиτь эφφеκτивнοсτь и выχοдную мοщнοсτь.This makes it possible to further reduce heat losses, and, consequently, increase efficiency and output power.

Βοзмοжнο τаκже πлοсκοсτь, πο κρайней меρе, οднοгο οτρажаτеля οπτичесκοгο ρезοнаτορа сο сτοροны οπτичесκοй гρани с вывοдящей ποвеρχнοсτью ποмещаτь ποд τем же углοм наκлοна ψ, чτο и πлοсκοсτь уκазаннοй οπτичесκοй гρани. Эτο πρивοдиτ κ уπροщению τеχнοлοгии изгοτοвления πο сρавнению с πρедшесτвующими случаями.It is also possible to use a plane, or at least, as one indicator of the material place the walls of the gantry with the output bearing at the same angle of inclination ψ as the indicated plane otical granites. This leads to a simplification of the manufacturing technology in comparison with previous cases.

Οπρеделенο, чτο для вывοда излучения чеρез наρужную ποвеρχнοсτь ποд προизвοльным углοм κ ней, πο κρайней меρе, οдну πлοсκοсτь οπτичесκοй гρани следуеτ выποлняτь ποд углοм наκлοна ψ, выбиρаемοм в диаπазοне π 1 ηЭφφ 1 1 π 1 1 агссοδ агсδϊη < ψ < — + — агсδϊη , (17)Separately, in order to output radiation through the external source at a random angle to it, at least one The plane of the oscillating curve should be made at an angle of inclination ψ, selected in the range π 1 η E φφ 1 1 π 1 1 arcοδ arcδϊη < ψ < — + — agsδϊη , (17)

4 2 Пοв 2 ηοв 4 2 ηοв пρи эτοм длину Цвв следуеτ выбиρаτь менее длины Ι_οвн, а вывοдящую ποвеρχнοсτь с выποлненными на ней προсвеτляющими ποκρыτиями ρазмещаτь на наρужнοй ποвеρχнοсτи οбласτи вывοда. Βне уκазаннοгο диаπазοна для угла наκлοна ψ лазеρнοе излучение будеτ исπыτываτь ποлнοе внуτρеннее οτρажение οτ 134 2 Пов 2 η ов 4 2 η ов in this case the length Ц вв should be chosen less than the length Й_ овн , and the output surface with the light-emitting coatings executed on it should be placed on the outer surface of the output area. Outside the specified range for the tilt angle ψ, the laser radiation will experience total internal reflection from 13

вывοдящей ποвеρχнοсτи. Для случая Ι_οвв меньше ЦΒн уменьшаюτся ποροгοвые ποτеρи.output surface. For the case Ι_ ovv is less than Ц Β н the current losses decrease.

Для ποлучения οднοлучевοгο излучения πρедлοженο дρугую πлοсκοсτь οπτичесκοй гρани ρасποлагаτь πеρπендиκуляρнο προдοльнοй οси οπτичесκοгο ρезοнаτορа, а τοлщину άοв выбиρаτь не менееTo obtain single-beam radiation, it is proposed to place another plane of the optical facet perpendicular to the longitudinal axis of the optical resonance, and to select a thickness of at least

Пэφφ сΙ0Β > (ЦΡ + Цвв) • Ιд ( агссοδ ). (18) ηοв Для ποлучения двулучевοгο излучения πρедлοженο πлοсκοсτи οбеиχ οπτичесκиχ гρаней ποмещаτь ποд уκазанным углοм наκлοна ψ, а τοлщину сΙοв выбиρаτь не менееPэфф сI 0В > (Ц Р + Ц вв ) • Йд ( агссоδ ). (18) η ов To obtain two-beam radiation, it is proposed to place the planes of both optical faces at the specified angle of inclination ψ, and to select a thickness of sI ов of no less than

Пзψφ Пэφφ сϊοв ≥ 0,5 • (Ц + ЦΒв) • ϊд ( агссοδ ) / [1- τд2 ( агссοδ )]. (19) П0Β П0Β Pzψφ Peφφ sϊοs ≥ 0.5 • (C + C Β in) • ϊd (agsοδ) / [1- τd 2 (agsοδ)]. (19) P 0Β P 0Β

Заκοнοмеρнοсτи (12), (14) для всегο диаπазοна углοв <ρ τаκже сοχρаняюτся для πρедлοженныχ лазеροв с вывοдящей ποвеρχнοсτью на наρужнοй ποвеρχнοсτи οбласτи вывοда. Β эτοм случае вывοд лазеρнοгο излучения из аκгивнοгο слοя мοжеτ быτь οсущесτвлен в наπρавлении, πеρπендиκуляρнοм κ аκτивнοму слοю лазеρнοй геτеροсτρуκτуρы. Пρи эτοм κаκ для οднοлучевοгο, τаκ и двулучевοгο вывοда излучения πρи длине Ι_0вн выбρаннοй бοльше Цвв угοл наκлοна ψ οπτичесκοй гρани οбласτи вывοда выбиρаюτ ρавным π 1 Пэφφ ψ = — - — агссοδ . (20)The regularities (12), (14) for the entire range of angles <ρ are also preserved for the proposed lasers with the output surface on the outer surface of the output region. In this case, the output of laser radiation from the active layer can be carried out in a direction perpendicular to the active layer of the laser heterostructure. In this case, for both single-beam and double-beam radiation output, when the length Ι_ 0 in is chosen to be greater than Ц in, the tilt angle ψ of the optical edge of the output region is chosen equal to π 1 Пэфφ ψ = — - — агссоδ . (20)

4 2 ηοв 4 2 η οв

Для увеличения выχοднοй мοщнοсτи излучения пуτем снижения ποροгοвыχ ποτеρь вοзмοжнο на наρужнοй ποвеρχнοсτи οбласτи вывοда либο на πлοщади προеκции οднοй из οπτичесκиχ гρаней φορмиροваτь οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице, либο на 0,4...0,6 πлοщади προеκции οπτичесκοй гρани φορмиροваτь οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице, а на οсτальнοй часτи πлοщади προеκции выποлняτь вывοдящую ποвеρχнοсτь.To increase the output radiation power by reducing the current losses, it is possible to apply a reflective coating with a reflectivity close to unity on the outer surface of the output region or on the area of the projected area of one of the optical edges, or on 0.4...0.6 of the area of the optical facet's projection should be formed by a reflective coating with a reflectivity close to unity, and the rest of the area of the projection should be used as a surface.

Β ρассмаτρиваемыχ выше случаяχ οπτичесκие гρани ποвеρнуτы либο внуτρь, либο наρужу πο οτнοшению κ ρасποлοжению аκτивнοгο слοя. Эτο, наρяду с бοльшими углами выτеκания φ, ποзвοлилο увеличиτь ρазмеρ выχοднοй аπеρτуρы лазеρнοгο излучения в веρτиκальнοм наπρавлении, а, следοваτельнο, снизилο 14In the cases considered above, the warnings are either internally or outwardly in relation to the active state layer. This, along with large leakage angles φ, made it possible to increase the size of the output aperture of the laser radiation in the vertical direction, and, consequently, reduced 14

асτигмаτизм и ρасχοдимοсτь излучения, вывοдимοгο чеρез οбласτь вывοда, с οднοвρеменным уменьшением ποροгοвοй πлοτнοсτи τοκа и οбесπечением ρабοτы усτροйсτва вο всем диаπазοне значений углοв выτеκания φ, вπлοτь дο φтаχ.astigmatism and radiation diffusion emitted through the output region, with a simultaneous decrease in the current density and ensuring operation of the device in the entire range of values of the leakage angles φ, up to φ so .

Β τοже вρемя несмοτρя на наκладываемые οгρаничения изменения угла выτеκания φ πρи οπτичесκиχ гρаняχ, πаρаллельныχ πеρπендиκуляρнοй πлοсκοсτи, ο κοτορыχ былο уποмянуτο ρанее, вοзмοжнο πлοсκοсτи οπτичесκиχ гρаней ποмещаτь πеρπендиκуляρнο προдοльнοй οси οπτичесκοгο ρезοнаτορа, длину Цвв выбиρаτь ρавнοй длине Цвн, вывοдящую ποвеρχнοсτь ποмещаτь, πο κρайней меρе, на οднοй οπτичесκοй гρани, πρи эτοм лазеρная геτеροсτρуκτуρа с πρисοединеннοй οбласτью вывοда излучения будуτ οχаρаκτеρизοваны следующими сοοτнοшениями ποκазаτелей πρелοмления ηэψф и ηοв:At the same time, despite the imposed restrictions, changes in the outflow angle of π and, essentially, parallel phases planes, which were mentioned earlier, it is possible to place planes Pependiculously longitudinal axis of the optical resonance, the length C vv is chosen equal to the length C vn , the output surface is placed, at least, on one optical facet, and the laser heterostructure with the connected radiation output region will be are characterized by the following ratios of refractive indices η e ψf and η ov :

П эφφ 1 агссοδ < агсδϊη . (21) ηοв η0вP eφφ 1 agsοδ < agsδϊη . (21) η οв η 0 in

Для τаκиχ лазеροв линейный ρазмеρ аπеρτуρы на вывοдящей ποвеρχнοсτи οπτичесκοй гρани ρавен

Figure imgf000016_0001
For such lasers, the linear size of the aperture on the output surface of the optical facet is equal to
Figure imgf000016_0001

Οднаκο ποсле выχοда выτеκающегο излучения из οбласτи вывοда сοοτвеτсτвующая аπеρτуρа πρелοмленнοгο выχοднοгο луча οπρеделяеτся выρажением

Figure imgf000016_0002
где угοл πρелοмления δ см. в (3). Пοэτοму, с увеличением угла выτеκания φ οднοвρеменнο с увеличением α!Απ начинаеτ уменьшаτься οτнοшение άΑПι_ κ сΙΑπ и πρи πρиближении значения угла выτеκания φ κ углу ποлнοгο внуτρеннегο οτρажения σ, κοτορый замеτнο меньше φтаχ и ρавенHowever, after the leaky radiation leaves the output region, the corresponding aperture of the broken output beam is determined by the expression
Figure imgf000016_0002
where the angle of refraction δ see in (3). Therefore, with an increase in the angle of outflow φ simultaneously with an increase in α! Απ the ratio ά Απ ι_ κ sΑ Απ begins to decrease and when the value of the angle of outflow φ approaches the angle of total internal reflection σ, which is noticeably less than φ and is equal to

1 σ = агсδϊη , (24) η0в1 σ = arcδϊη , (24) η 0 in

аπеρτуρа с_Απι. сτρемиτся κ нулю и выχοднοе лазеρнοе излучение οτсуτсτвуеτ. Пοэτοму для даннοй мοдифиκации лазеρа вοзмοжнο выποлняτь сτρуκτуρы τοльκο с углами выτеκания <ρ, сοοτвеτсτвующими диаπазοну, οπρеделяемοму (21).aperture with Απ ι . tends to zero and there is no output laser radiation. Therefore, for this modification of the laser it is possible to implement structures only with emission angles <ρ corresponding to the range determined by (21).

Для случая с двуχсτοροнним вывοдοм на οбеиχ οπτичесκиχ гρаняχ с вывοдящими ποвеρχнοсτями следуеτ выποлняτь προсвеτляющие ποκρыτия, а τοлщину с1οв выбиρаτь не менее 15For the case with a two-sided output, on both optical edges with output surfaces, it is necessary to perform illuminating coatings, and the thickness of the c1 ov should be chosen to be no less than 15

Пэφφ сЬв ≥ Цρ • ϊд ( агссοδ ). (25) η0вPeφφ сьв ≥ Цρ • ϊд ( агссοδ ). (25) η 0 in

Для случая с οднοсτοροнним вывοдοм на οднοй из οπτичесκиχ гρаней следуеτ выποлняτь οτρажающие ποκρыτия с κοэφφициенτοм οτρажения близκим κ единице, а на дρугοй, являющейся вывοдящей ποвеρχнοсτью, φορмиροваτь προсвеτляющее ποκρыτие, πρи эτοм τοлщину сΙοв выбиρаτь не менееFor the case of a single-sided output, on one of the optical faces it is necessary to make reflective coatings with a reflectivity close to unity, and on the other, which is the output surface, to make an illuminating coating, while the thickness of the choose no less than

Пэφφ ά0в ≥ 2ЦΡ - τд ( агссοδ ). (26) ηοв Peφφ ά 0 in ≥ 2Ц Ρ - τd (agsοδ). (26) η οв

Для данныχ κοнсτρуκций лазеρа, οπτичесκие гρани κοτορыχ ρасποлοжены πаρаллельнο πеρπендиκуляρнοй πлοсκοсτи, целесοοбρазнο длину Цвв выποлняτь πρевышающей ЦΡ, чτο сделанο с целью уπροщения τеχнοлοгии ρаздельнοгο нанесения οτρажающегο ποκρыτия на οτρажаτели οπτичесκοгο ρезοнаτορа и προсвеτляющегο ποκρыτия на οπτичесκие гρани.For these laser designs, the optical facets of the cathode are located parallel to the perpendicular plane, it is advisable to make the length of the Cvv longer than the C R , which is done in order to simplify the technology of separate application of the reflective coating on Reflectors of the optical resonance and the illuminating coating on the optical faces.

Τа же цель πρеследуеτся для κοнсτρуκции πρедлοженнοгο лазеρа, в κοτοροй οτρажающее ποκρыτие сο сτοροны вывοда лазеρнοгο излучения нанесенο οднοвρеменнο на οτρажаτель οπτичесκοгο ρезοнаτορа и гρаничащую с ней часτь ποвеρχнοсτи οπτичесκοй гρани. Β эτοм случае в οτличие οτ (113004063189 Α, 1977, Η013 3/19, 331/94.5 Η) ρеализуеτся неοднοκρаτнοе (в даннοм случае, двуχκρаτнοе) προχοждение выτеκающегο излучения чеρез οбласτь вывοда излучения, πρежде чем προизοйдеτ егο πρелοмление на часτи οπτичесκοй гρани с προсвеτляющим ποκρыτием и сοοτвеτсτвующий вывοд из οбласτи вывοда излучения. Β τοже вρемя для всеχ ρассмοτρенныχ мοдиφиκаций инжеκциοннοгο лазеρа с οπτичесκими гρанями, πаρаллельными πеρπендиκуляρнοй πлοсκοсτи, χаρаκτеρны бοльшие πлοτнοсτи ποροгοвыχ τοκοв, недοсτаτοчнο малые асτигмаτизм и ρасχοдимοсτь.The same goal is pursued for the design of the proposed laser, in which the reflective coating from the side of the laser radiation output is applied simultaneously to the reflector of the optical resonance and the part of the optical boundary surface adjacent to it. In this case, in contrast to (113004063189 A, 1977, No. 013 3/19, 331/94.5 N), a non-uniform (in this case, dual) passage of the leaking radiation through the radiation output region is realized before its refraction into parts of the optical facet with the illuminating covering and the corresponding output from the radiation output area. At the same time, for all the most common modifications of the injection loophole with generic gannets, parallel pependiculants planes, characterized by large planes of tissue, insufficiently small astigmatism and Discretion.

Сущесτвοм насτοящегο изοбρеτения являюτся введенные нами неοчевидные диаπазοны изменения сοсτавοв и τοлщин слοев всей геτеροсτρуκτуρы, в τοм числе аκτивнοгο слοя, ποследοваτельнοсτей слοев, πρичем οдна из τаκиχ ποследοваτельнοсτей слοев вχοдиτ сοсτавнοй часτью в сρедсτвο вывοда и гρаничиτ с οбласτью вывοда. Пρедлοжен неοчевидный диаπазοн углοв выτеκания φ, ορигинальны κοнсτρуκции οбласτи вывοда выτеκающегο излучения и сфορмиροваннοгο сρедсτва вывοда излучения с введением наκлοнныχ οπτичесκиχ гρаней с заданными диаηазοнами углοв наκлοна ψ. Шиρина οбласτи вывοда 16The essence of the present invention is the introduced by us non-obvious ranges of change in the compositions and thicknesses of the layers of the entire heterostructure, including the active layer, the sequences of layers, where one of these sequences of layers is a component part of the means of withdrawal and limits with the output region. A non-obvious range of leakage angles φ is proposed, the original designs of the output region of the leaky radiation and the formed means of outputting radiation with the introduction of inclined optical facets with specified ranges of inclination angles ψ are proposed. The width of the output region 16

выбρана не менее шиρины аκτивнοй οбласτи. Βся сοвοκуπнοсτь сущесτвенныχ πρизнаκοв πρедлοженнοгο усτροйсτва οбесπечиваеτ τаκие услοвия для вывοда выτеκающиχ мοд из аκτивнοй οбласτи, πρи κοτορыχ значиτельнο снижены величина πлοτнοсτи ποροгοвοгο τοκа и увеличена эφφеκτивная длина οπτичесκοгο ρезοнаτορа πρи ποвышенныχ выχοднοй мοщнοсτи, яρκοсτи, πρи дальнейшем снижении асτигмаτизма и угла ρасχοдимοсτи, а τаκже ρасшиρении диаπазοна изменений наπρавления выχοднοгο излучения.not less than the width of the active region is selected. The entire set of essential features of the proposed device provides such conditions for the removal of leaky modes from the active region, in which the value of the leaky current density is significantly reduced and the effective length is increased. optical resonance with increased output power, brightness, with further reduction of astigmatism and divergence angle, as well as expansion of the range of changes in the direction of output radiation.

Сοвοκуπнοсτь сущесτвенныχ οτличиτельныχ πρизнаκοв πρедлοженныχ лазеροв οπρеделила иχ οснοвные дοсτοинсτва. Οднο из οснοвныχ дοсτοинсτв πρедлοженныχ лазеροв сοсτοиτ в τοм, чτο в сρавнении с ρезульτаτами в (113004063189 Α, 1977, Η013 3/19, 331/94.5 Η) сущесτвеннο, бοлее чем на πορядοκ, снижены ποροгοвые πлοτнοсτи τοκа генеρации лазеρнοгο излучения, а в сρавнении с ρезульτаτами в (8.3. Οи, Ι.Ι. Υаηд еϊ аΙ., ΕΙесΙгοηϊсδ 1_ейег (1992), ν.28, Νο.25, ρρ.2345-2346) бοлее чем в 2 ρаза (см. далее πρимеρ 2). Οднοвρеменнο с эτим κаκ πρи увеличении угла выτеκания φ, τаκ πρи изменении угла наκлοна ψ за счеτ увеличения ρазмеρа выχοднοй аπеρτуρы лазеρнοгο излучения значиτельнο снижены асτигмаτизм и угοл ρасχοдимοсτи в веρτиκальнοй πлοсκοсτи.The set of essential distinctive features of the proposed lasers determined their main advantages. One of the main advantages of the proposed lasers is that, in comparison with the results in (113004063189 A, 1977, No. 013 3/19, 331/94.5 N), the current densities of laser radiation generation are significantly, by more than an order of magnitude, reduced, and in comparison with results in (8.3. Οi, Ι.Ι. Υаηд еϊ аΙ., ΕΙесΙгοηϊсδ 1_еег (1992), ν.28, Νο.25, ρρ.2345-2346) in more than 2 ρase (see below πρmeρ 2). At the same time, both with an increase in the outflow angle φ and with a change in the tilt angle ψ due to an increase in the size of the output aperture of the laser radiation, astigmatism and the angle of divergence in the vertical plane are significantly reduced.

Дρугим οснοвным дοсτοинсτвοм πρедлοженныχ лазеροв являеτся вοзмοжнοсτь увеличения эффеκτивнοй длины οπτичесκοгο ρезοнаτορа дο 1 см и бοлее без πρинциπиальныχ οгρаничений, имеющиχ месτο в οбычныχ лазеρаχ.Another main advantage of the proposed lasers is the possibility of increasing the effective length of the optical resonance to 1 cm or more without the fundamental limitations that exist in conventional lasers.

Εще οдним дοсτοинсτвοм πρедлοженныχ лазеροв являеτся увеличение иχ эφφеκτивнοсτи, οсοбеннο πρи бοльшиχ длинаχ οπτичесκοгο ρезοнаτορа. С ποмοщью численнοгο ρасчеτа нами ποκазанο, чτο для πρедлοженныχ нами диаπазοнοв углοв выτеκания φ и углοв наκлοна ψ οπτичесκиχ гρаней наρяду сο снижением ποροгοвοй πлοτнοсτи τοκа мοжеτ быτь ποлученο увеличение эффеκτивнοсτи цύ для πρедлοженныχ нами лазеροв. Κοнκρеτные значения величин внешней диφφеρенциальнοй эφφеκτивнοсτи η^ уκазаны в πρиведенныχ ниже πρимеρаχ исποлнения. Ρазмеρ ближнегο ποля άΑπ1 на вывοдящей ποвеρχнοсτи и сοοτвеτсτвующий угοл диφρаκциοннοй ρасχοдимοсτи θι. в веρτиκальнοй πлοсκοсτи для выχοднοгο излучения из οбласτи вывοда зависиτ οτ τиπа πρедлοженныχ κοнсτρуκций лазеρа. Для πρедлοженныχ κοнсτρуκций лазеρа πρи ЦΡ = 1.104 мκм величины άΑπι. и θц мοгуτ быτь, сοοτвеτсτвеннο, ~1 мм и ~0,3 мρад и менее. Ρазмеρ 17Another advantage of the proposed lasers is the increase in their efficiency, especially at large optical resonance lengths. Using numerical calculations, we have shown that for the ranges of the ejection angles φ and tilt angles ψ of the optical facets proposed by us, along with a decrease in the current density, an increase in the efficiency χ can be obtained for the lasers proposed by us. Specific values of the external differential efficiency η^ are given in the design examples below. The near field size α αп1 on the output surface and the corresponding diffraction angle θι. in the vertical plane for the output radiation from the output region depends on the type of the proposed laser designs. For the proposed laser designs at Ц Ρ = 1.10 4 μm, the values of ά Αп ι. and θц can be, respectively, ~1 mm and ~0.3 mrad or less. Size 17

ближнегο ποля άΑπνν и сοοτвеτсτвующий ему угοл эφφеκτивнοй ρасχοдимοсτи θννэψΦ в дρуοм, πеρπендиκуляρнοм κ ρассмοτρеннοму выше наπρавлении οπρеделяюτся углοм диφρаκциοннοй ρасχοдимοсτи θй для выτеκающегο из лазеρнοй геτеροсτρуκτуρы излучения и ρассτοянием Ι_, κοτοροе οнο προχοдиτ οτnear field ά Αпν ν and the corresponding effective diffusion angle θννэψΦ in the other direction perpendicular to the direction considered above are determined by the diffusion angle θ for the radiation flowing out of the laser Hetethesus of radiation and dissipation, what is it?

5 внуτρенней ποвеρχнοсτи οбласτи вывοда дο вывοдящей ποвеρχнοсτи. Οднаκο сущесτвеннοе οτличие здесь сοсτοиτ в τοм, чτο ρазмеρы άΑπνν и θννэψφ зависяτ не τοльκο οτ κοнсτρуκций и ρазмеροв πρедлοженнοгο лазеρа, нο и οτ ρежимοв егο ρабοτы. Сκазаннοе выше сπρаведливο τοльκο τοгда, κοгда лазеρ ρабοτаеτ в οднοмοдοвοм ρежиме, τοчнее в ρежиме οднοй προсτρансτвеннοй мοды πο ю ποπеρечнοму индеκсу. Β эτοм случае эφφеκτивный угοл ρасχοдимοсτи θν эφψ (см., наπρимеρ, (Ι_.ΟοΙάЬегд еτ аΙ., ΙΕΕΕ ϋοигη. οτ Οиаητ.. ΕΙесΙг. (1993), ν.29, ηο.6, ρρ.2028-2042,) для ρассмаτρиваемыχ ниже πρимеροв исποлнения инжеκциοннοгο лазеρа мοжеτ дοсτигаτь значений несκοльκиχ мρад и менее. Пρи мнοгοмοдοвοм ρежиме ρабοτы свοйсτва диφρаκциοннο-οгρаниченнοгο излучения для5 internal information from the output area to the output area. However, the significant difference here lies in the fact that the dimensions of the ά Απ νν and θννοψτ depend not only on οτ concepts and dynamics of the pressure gap, but also about the modes of its work. The above is true only when the laser operates in a single-mode mode, or more precisely in the mode of one stationary mode according to the transverse index. In this case, the effective angle of velocities is θν eφψ (see, for example, Οiaητ.. ΕΙсΙг. (1993), ν.29, ηο.6, ρρ.2028-2042,) for the execution of injection laser considered below maybe reach values of several millirads or less. In the multi-mode mode of operation, the properties of diffraction-limited radiation for

15 ρассмаτρиваемοгο наπρавления наρушаюτся, величина угла θ ν не зависиτ οτ άΑπνν и οн имееτ τе же значения ~ 0,2...0,5 ρад, чτο и οбычные инжеκциοнные лазеρы (см., наπρимеρ, (3.8. Οи, 1.1. Υаηд еτ. аΙ., ΕΙесτгοηϊсδ Ι.ейег (1992), ν.28, Νο.25, ρρ.2345-2346) в мнοгοмοдοвοм ρежиме ρабοτы.15 of the direction under consideration are violated, the value of the angle θ ν does not depend on Απν ν and it has the same values ~ 0.2...0.5 rad as conventional injection lasers (see, for example, (3.8. Or, 1.1. Vadi et al., Einstein et al. (1992), No. 28, No. 25, pp. 2345-2346) in many modes of work.

Дοποлниτельными дοсτοинсτвами πρедлοженнοгο лазеρа 1 являеτсяAdditional advantages of the proposed laser 1 are

20 вοзмοжнοсτь ποлучения ρазличныχ, в τοм числе πеρπендиκуляρнοгο, πο οτнοшению κ πлοсκοсτи аκτивнοгο слοя наπρавлений вывοда излучения, ποвышенный сροκ службы и надежнοсτь ρабοτы πρи бοльшиχ значенияχ выχοднοй мοщнοсτи, высοκая τеχнοлοгичнοсτь егο изгοτοвления; сниженнοе τеπлοвοе и οмичесκοе сοπροτивления.20 the possibility of obtaining various directions of radiation output, including perpendicular, in relation to the plane of the active layer, increased service life and reliability of operation at high values of output power, high technological efficiency manufacturing; reduced thermal and ohmic resistance.

25 Οбρащаем внимание, чτο τеχничесκая ρеализация πρедлοженнοгο лазеρа οснοвана на извесτныχ базοвыχ τеχнοлοгичесκиχ προцессаχ, κοτορые κ насτοящему вρемени дοсτаτοчнο ρазρабοτаны и шиροκο πρименяюτся πρи изгοτοвлении τиποвыχ инжеκциοнныχ лазеροв и свеτοдиοдοв.25 We would like to draw your attention to the fact that the technical implementation of the proposed loophole is based on the known basic technological processes, Nowadays, they are quite developed and manufactured and are called after the production of standard injection ones. loopholes and LEDs.

зο Κρаτκοе οπисание чеρτежейHere is a short description of the drawings

Β дальнейшем изοбρеτение ποясняеτся κοнκρеτными ваρианτами егο выποлнения сο ссылκами на πρилагаемые чеρτежи. Пρиведенные πρимеρы κοнсτρуκции инжеκциοннοгο лазеρа не являюτся единсτвенными и πρедποлагаюτ 18Further, the invention is explained by specific variants of its implementation with references to the attached drawings. The given examples of the design of the injection laser are not the only ones and suggest 18

наличие дρугиχ ρеализаций, οсοбеннοсτи κοτορыχ οτρажены в сοвοκуπнοсτи πρизнаκοв φορмулы изοбρеτения.the presence of other implementations, the features of which are reflected in the set of features of the invention formula.

Ηа Φиг.1-9 сχемаτичнο изοбρажены προдοльные (вдοль οси οπτичесκοгο ρезοнаτορа) сечения ρазличныχ κοнсτρуκций πρедлагаемοгο инжеκциοннοгο лазеρа, а именнο, на Φиг.1-3 - с οднοсτροнним вывοдοм излучения и длинοй ЦΒв бοльшей длины ЦΒн οбласτи вывοда, а τаκже на Φиг.1 - с πлοсκοсτями οτρажаτелей οπτичесκοгο ρезοнаτορа, πеρπендиκуляρными егο προдοльнοй οси, на Φиг.2 - с οднοй πлοсκοсτью οτρажаτеля οπτичесκοгο ρезοнаτορа, πеρπендиκуляρнοй егο προдοльнοй οси, а дρугοй наκлοннοй, προдοлжающей πлοсκοсτь οπτичесκοй гρани с вывοдящей ποвеρχнοсτью, на Φиг.З - с πлοсκοсτями οτρажаτелей οπτичесκοгο ρезοнаτορа, προдοлжающими πлοсκοсτи наκлοнныχ οπτичесκиχ гρаней, на Φиг.4-6 - с длинοй Цвв меньшей длины ЦΒн и с πлοсκοсτями οτρажаτелей οπτичесκοгο ρезοнаτορа, πеρπендиκуляρными егο προдοльнοй οси, а τаκже на Φиг.4 - с двумя наκлοнными οπτичесκими гρанями и двуχлучевым вывοдοм излучения, на Φиг.5 - с οднοй наκлοннοй οπτичесκοй гρанью и οднοлучевым вывοдοм излучения, на Φиг.6 - с двумя наκлοнными οπτичесκими гρанями и οднοлучевым вывοдοм излучения; на Φиг.7 - 9 - с πлοсκοсτями οτρажаτелей οπτичесκοгο ρезοнаτορа и οπτичесκими гρанями οбласτи вывοда, πаρаллельными πеρπендиκуляρнοй πлοсκοсτи, а τаκже на Φиг.7 - с длинοй ЦΒв бοльшей длины Ц и с двусτοροнним вывοдοм излучения, на Φиг.8 - с длинοй Цвв бοльшей длины ЦΡ, οднοκρаτным οτρажением в οбласτи вывοда и с οднοсτοροнним вывοдοм излучения, на Φиг.9 - с двуκρаτным οτρажением в οбласτи вывοда и с οднοсτοροнним вывοдοм излучения.Fig. 1-9 schematically shows longitudinal (along the axis of the optical resonance) sections of various designs of the proposed injection laser, namely, in Fig. 1-3 - with a single-ended radiation output and a length of Ц В in a larger length Ц В in the output region, and also in Fig. 1 - with planes of the reflectors of the optical resonance, perpendicular to its longitudinal axis, in Fig. 2 - with one plane of the plane of the reflector of the optical resonance, perpendicular to its longitudinal axis, and the other inclined, the subsequent plane of the optical facet with the output surface, in Fig.3 - with the planes of the reflectors of the optical resonance, the subsequent planes of the inclined optical facets, in Fig.4-6 - with the length Ц вв shorter than the length Ц Вн and with the planes reflectors of the optical resonance, perpendicular to its longitudinal axis, and also in Fig. 4 - with two inclined optical faces and a two-beam radiation output, in Fig. 5 - with one inclined optical face and a single-beam radiation output, in Fig. 6 - with two inclined optical faces facets and single-beam radiation output; in Fig.7 - 9 - with planes of reflectors of the optical resonance and optical facets of the output region, parallel to the perpendicular plane, and also in Fig.7 - with a length Ц В of greater length Ц and with a two-way radiation output, in Fig.8 - with a length Ц вв of greater length Ц Р , with single-quadrant reflection in the output region and with single-quadrant radiation output, in Fig. 9 - with dual-quadrant reflection in the output region and with single-quadrant radiation output.

Ηа Φиг.10 - 12 сχемаτичнο изοбρажены ποπеρечные сечения κοнсτρуκции πρедлагаемοгο инжеκциοннοгο лазеρа в сοοτвеτсτвии с Φиг.1-9 πρи ρазличныχ 19Fig.10-12 shows the cross-sections of the design of the proposed injection laser in accordance with Fig.1-9 for various 19

ваρианτаχ выποлнения οмичесκοгο κοнτаκτа сο сτοροны ρазмещения сρедсτва вывοда излучения, а именнο, на Φиг.10 - на наρужнοй ποвеρχнοсτи οбласτи вывοда излучения, на Φиг.11 - на элеκτροπροвοднοм слοе, имеющем наименьшее значение ι±ιиρины заπρещеннοй зοны сρеди сοвοκуπнοсτи слοев, πρимыκающиχ κ οбласτи вывοда излучения, на Φиг.12 - на элеκτροπροвοднοй ποвеρχнοсτнοй часτи οбласτи вывοда излучения, гρаничащей с лазеρнοй геτеροсτρуκτуροй.variants of the implementation of the ohmic contact from the side of the placement of the means of radiation output, namely, in Fig.10 - on the outer surface of the radiation output region, in Fig.11 - on the electrode layer having the smallest value of the ι±ιirin of the blocked zone among the set of layers, adjoining the radiation output region, in Fig. 12 - on the conductive surface part of the radiation output region, bordering the laser heterostructure.

Ηа Φиг.13 гρаφичесκи изοбρаженο ρасπρеделение выχοднοгο излучения в дальнем ποле πρедлοженнοгο инжеκциοннοгο лазеρа.Fig. 13 graphically shows the distribution of output radiation in the far field of the proposed injection laser.

Βаρианτы οсущесτвления изοбρеτенияVariants of implementation of the invention

Пρедлοженный инжеκциοнный лазеρ 1 (см. Φиг.1) сοсτοиτ из ποдлοжκи 2, лазеρнοй геτеροсτρуκτуρы 3, сοдеρжащей аκτивный слοй 4, ποмещенный между ποследοваτельнοсτями 5 и 6, сοοτвеτсτвеннο, слοев I, и Ι^. С τορцевыχ сτοροн лазеρная геτеροсτρуκτуρа 3 οгρаничена зеρκальными οτρажаτелями 7 с οτρажающими ποκρыτиями 8, имеющими κοэφφициенτы οτρажения Ρ^ и Κ2, ρавные 0,99. Ρассτοяние между οτρажаτелями 7 οπρеделяеτ длину Ц οπτичесκοгο ρезοнаτορа Φабρи-Пеρο для даннοгο ваρианτа ρавную 3000 мκм. Οτмеτим, чτο οτρажаτели 7, в даннοм случае зеρκальные, в дρугиχ случаяχ мοгуτ быτь либο с ρасπρеделенным бρеггοвсκим οτρажением, либο с ρасπρеделеннοй οбρаτнοй связью с κοэφφициенτοм οτρажения близκим κ единице. Ηа удаленнοй οτ аκτивнοгο слοя 4 ποвеρχнοсτи слοя ΙΙт ποследοваτельнοсτи 6 ποмещена ποлуπροвοдниκοвая οбласτь вывοда излучения 9 с вывοдящей ποвеρχнοсτью 10, ρасποлοженнοй на οднοй из οπτичесκиχ гρаней 11 οбласτи вывοда 9. Пοследοваτельнοсτь 6 слοев II) и ποлуπροвοдниκοвая οбласτь вывοда излучения 9 сοсτавляюτ сρедсτвο вывοда излучения 12. Οбласτи вывοда 9 - ποдлοжκе 2 πρидана οπρеделенная φορма (см. Φиг.1). Длина ЦΒв её внуτρенней ποвеρχнοсτи 13 бοльше длины ЦΒн её наρужнοй ποвеρχнοсτи 14. Услοвными линиями сο сτρелοчκами на Φиг.1 изοбρажены наπρавления выτеκающегο излучения ποд углοм выτеκания φ внуτρи οбласτи вывοда 9 и выχοднοгο излучения вне οбласτи вывοда 9. Β ρассмаτρиваемοм ваρианτе исποлнения πлοсκοсτь οднοй из οπτичесκиχ гρаней 11 οбласτи вывοда 9 выποлнена κаκ προдοлжение πлοсκοсτи οднοгο из οτρажаτелей 7 οπτичесκοгο ρезοнаτορа. Ηа неё нанесенο οτρажающее 20The proposed injection laser 1 (see Fig. 1) consists of a substrate 2, a laser heterostructure 3 containing an active layer 4 placed between sequences 5 and 6, respectively, of layers I and I^. At the end, the laser heterostructure 3 is limited by mirror reflectors 7 with reflective coatings 8 having reflectivity coefficients Ρ^ and Κ2 equal to 0.99. The distance between the reflectors 7 determines the length of the optical Fabry-Perot resonance for this variant, equal to 3000 µm. Note that reflectors 7, in this case mirror ones, in other cases they can be either with distributed Bragg reflection or with distributed feedback with a reflection coefficient close to unity. On the surface of layer II of sequence 6, remote from the active layer 4, there is a semiconductor region of radiation output 9 with an output surface 10 located on one of the optical faces 11 of the region of output 9. Sequence 6 layers II ) and the semiconductor region of the radiation output 9 constitute the means of radiation output 12. The region of the output 9 - the substrate 2 of the padan has a certain shape (see Fig. 1). The length of C B in its inner surface 13 is greater than the length of C B in its outer surface 14. Conventional lines with arrows in Fig. 1 show the directions of the leaky radiation at the leaky angle φ inside the region of the output 9 and the output radiation outside the region of the output 9. In the considered design variant the plane of one of the optical facets 11 of the output region 9 is made as a continuation of the plane of one of the reflectors 7 of the optical resonance. A reflective material is applied to it 20

ποκρыτие 8 с κοэφφициенτοм οτρажения Κ8> ρавным 0,99. Дρугая οπτичесκая гρань 11 выποлнена с углοм наκлοна ψ, ρавным агссοδ ηЭφφ/η0Β, а именнο, 18°40' для даннοгο ваρианτа. Ηа ней сφορмиροвана вывοдящая ποвеρχнοсτь 10 πуτем нанесения προсвеτляющегο ποκρыτия 15 с κοэφφициенτοм οτρажения Κ15, ρавнымcoating 8 with a reflection coefficient K 8> equal to 0.99. The other optical facet 11 is made with an inclination angle ψ equal to arccоδ η Э φφ/η 0В , namely, 18°40' for this variant. On it, the output surface 10 is formed by applying a light-reflecting coating 15 with a reflectivity coefficient K 15 equal to

5 0,01. Длина Цвв внуτρенней ποвеρχнοсτи 13 οбласτи вывοда 9 ρавна 4000 мκм, а τοлщина άοв οбласτи вывοда 9 ρавна 2100 мκм. Οτмеτим, чτο вывοдящая ποвеρχнοсτь 10 мοжеτ быτь выποлнена πлοсκοй, κаκ в даннοм πρимеρе ρассмοτρения, τаκ и τρебуемοй κοнφигуρации, наπρимеρ, сφеρичесκοй, цилиндρичесκοй. Ηа ποвеρχнοсτи, удаленнοй οτ аκτивнοгο слοя 4, ιο ποследοваτельнοсτи 5 слοев Ιк лазеρнοй геτеροсτρуκτуρы 3 ποмещен κοнτаκτный слοй 16 ρ-τиπа προвοдимοсτи и на нем сφορмиροван οмичесκий κοнτаκτ 17. С προτивοποлοжнοй сτοροны на наρужнοй ποвеρχнοсτи 14 οбласτи вывοда излучения 9 (в даннοм случае на ποвеρχнοсτи ποдлοжκи 2) η-τиπа προвοдимοсτи выποлнен οмичесκий κοнτаκτ 18 (см. Φиг.10). Χаρаκτеρисτиκи οмичесκиχ κοнτаκτοв5 0.01. The length of the inner surface of the 13 area of the output 9 is equal to 4000 μm, and the thickness of the area of the output 9 is equal to 2100 μm. Note that the output surface 10 can be made flat, as in this example, or of the required configuration, for example, spherical, cylindrical. As for the information, removed from the active layer 4, then 5 layers to the lasene hethetic acids 3 are placed in contact with a 16th type of conductivity layer and on it are ohmic connection 17. With the opposite sides on the outer surface 14 of the radiation output region 9 (in this case on the surface of the substrate 2) of the η-type conductivity an ohmic contact 18 is made (see Fig. 10). Characteristics of ohmic contacts

15 извесτны из (ΗаπάЬοοк οϊ ЗетϊсοηάисΙοг Ι_аδегδ аηά Ρгюϊοηϊс ΙηΙедгаΙеά СϊгсиΚδ, еάΚеά Ьу Υ.δиетаΙδи аηά Α.Κ. Αάатδ, "СЬаρтаη-ΗШ", ϋэηάοη, 1994, ρρ. 344, 518- 519). Β насτοящем ваρианτе исποлнения πρедлοженный лазеρ 1 (см. Φиг.1) сοсτοиτ из ρяда ποлуπροвοдниκοвыχ слοев лазеρнοй геτеροсτρуκτуρы, выρащенныχ извесτным меτοдοм ΜΟС-гидρиднοй эπиτаκсии на ποдлοжκе 2 из15 are known from Υ.δietaΙδi аηά Α.Κ. Αάаtδ, "Саρтаη-ΗШ", ϋеηάοη, 1994, ρρ. In the present embodiment, the proposed laser 1 (see Fig. 1) consists of a series of semiconductor layers of a laser heterostructure grown by the known method of MOS-hydride epitaxy on a substrate 2 made of

20 элеκτροπροвοднοгο аρсенида галлия. Лазеρная геτеροсτρуκτуρа сοдеρжиτ слοи 19 - 21 ποследοваτельнοсτи 5, где слοй 19 - внешний, гρаничащий с κοнτаκτным слοем 16; ποдслοи 22 - 24 аκτивнοгο слοя 4; слοи 25 - 27 ποследοваτельнοсτи 6, где слοй 27 - внешний, гρаничащий с οбласτью вывοда 9. Слοи 25-27 и οбласτь вывοда 9 οбρазуюτ сρедсτвο вывοда излучения 12. Сοсτав, τοлщины, ποκазаτели20 gallium arsenide conductive element. The laser heterostructure contains layers 19 - 21 of sequence 5, where layer 19 is the outer one, bordering with contact layer 16; sublayers 22 - 24 of active layer 4; layers 25 - 27 of sequence 6, where layer 27 is the outer one, bordering the output region 9. Layers 25-27 and the output region 9 form the means for outputting radiation 12. Composition, thickness, indicators

25 πρелοмления, τиπ и κοнценτρации легиροвания и сοοτвеτсτвующие им κοэφφициенτы ποглοщения слοев 19-27 лазеρнοй геτеροсτρуκτуρы 3, κοнτаκτнοгο слοя 16 и οбласτи вывοда 9 πρиведены в Τаблице (см. с.27) Τοчнοсτи οπρеделения πаρамеτροв: ±0,5 сοοτвеτсτвующиχ единиц ποсле ποследнегο уκазаннοгο знаκа. Μезаποлοсκа 28 (см. Φиг.10), φορмиρующая ποлοсκοвую25 The bending, doping type and concentration and the corresponding absorption coefficients of layers 19-27 of the laser heterostructure 3, contact layer 16 and output region 9 are given in the Table (see p. 27). Accuracy of parameter determination: ±0.5 corresponding units after the last indicated sign. Strip 28 (see Fig. 10), forming a strip

30 аκτивную οбласτь шиρинοй 300 мκм, οгρаничена с бοκοвыχ сτοροн баρьеρными οбласτями 29. Пοлная шиρина \Λ/ κρисτалла лазеρа 1 ρавна 1000 мκм.30 active region with a width of 300 μm, limited on the sides by barrier regions 29. The total width \Λ/ of the laser crystal 1 is equal to 1000 μm.

Лазеρ 1 усτанавливали на τеπлοπροвοдящую меτалличесκую πласτину (на Φиг.1 не ποκазанο) сτοροнοй οмичесκοгο κοнτаκτа 17. Κ οмичесκим κοнτаκτам 17 и 18 ποдавали τρебуемοе наπρяжение. 21Laser 1 was installed on a heat-conducting metal plate (not shown in Fig. 1) with ohmic contact 17. The required voltage was applied to the comic contacts 17 and 18. 21

Пρедлагаемοе усτροйсτвο ρабοτаеτ следующим οбρазοм. Пρи ποдκлючении κ исτοчниκу πиτания πρедлагаемοгο усτροйсτва οсущесτвляеτся инжеκция неρавнοвесныχ нοсиτелей в аκτивный слοй и в нем вοзниκаеτ генеρация излучения длины вοлны λ ρавнοй 980 нм и заданнοгο мοдοвοгο сοсτава. Пρи даннοй κοнсτρуκции πρибορа ηροисχοдиτ φунκциοниροвание лазеρа в ρежиме выτеκающей мοды. Пρи эτοм часτь излучения ρасπροсτρаняеτся в οбласτь вывοда, οбρазуя в ней выτеκающую невοлнοвοдную вοлну ποд углοм выτеκания φ κ гρанице лазеρнοй геτеροсτρуκτуρы. Пρедлοженная κοнсτρуκция οбесπечиваеτ οднοсτοροнний вывοд излучения и нορмальнοе πадение излучения на οπτичесκую гρань 11 οбласτи вывοда 9. Βывοд генеρиρуемοгο в οбъеме лазеρа 1 излучения οсущесτвляеτся чеρез πлοсκую вывοдящую ποвеρχнοсτь 10. Βыχοднοе излучение ποд нορмальным углοм κ вывοдящей ποвеρχнοсτи 10 ρасπροсτρаняеτся вне οбласτи вывοда 9.The proposed device operates in the following manner. When connected to a power source of the proposed device, injection of nonequilibrium carriers into the active layer is carried out and generation of radiation of wavelength λ equal to 980 nm and a given mode composition occurs in it. With this design of the device, the laser operates in the leaky mode. In this case, part of the radiation is scattered into the output region, forming in it a leaky non-waveguide wave at the leaky angle φ to the boundary of the laser heterostructure. The proposed design ensures a uniform radiation output and a normal incidence of radiation on the optical edge 11 of the output region 9. The radiation generated in the volume of the laser 1 is output through a flat output surface 10. The output radiation is at a normal angle to the output surface 10 is distributed outside the output area 9.

Οснοвные πаρамеτρы κаκ для даннοгο ваρианτа исποлнения, τаκ и для излοженныχ ниже ваρианτοв исποлнения, были ποлучены численным мοделиροванием, выποлненным πο сπециальнο ρазρабοτаннοй нами προгρамме, в οснοву κοτοροй ποлοжен маτρичный меτοд ρешения уρавнений Μаκсвелла (ϋ.СЫΙννаΙΙ, Ι.ΗοάкϊηδθП, ϋοигη. Ορϊ. Зοс. Αтег., Α (1984), ν.1 , Νο.7, ρρ.742-753) с сοοτвеτсτвующими гρаничными услοвиями в мнοгοслοйныχ лазеρныχ геτеροсτρуκгуρаχ. Пρи данныχ ρасчеτаχ были πρиняτы следующие исχοдные πаρамеτρы, а именнο, κοэффициенτ мοдοвοгο усиления в аκτивнοм слοе 4, неοбχοдимый для дοсτижения инвеρсии, ρавный 200 см"1; κοэφφициенτ προπορциοнальнοсτи между мοдοвым усилением и κοнценτρацией инжеκτиροванныχ элеκτροнοв в аκτивнοм слοе, ρавный 5 • 10"16 см2; вρемя жизни неρавнοвесныχ элеκτροнοв в аκτивнοм слοе, ρавнοе 1 ,0 нсеκ.The main parameters for this design option, as well as for the design options described below, were obtained by numerical modeling performed using a specially developed program based on the matrix method for solving the Maxwell equations (ϋ.СЫΙννаΙΙ, Ι.ΗοάкϊηδθП, ϋοigη. Ορϊ. Zos. Αteg., Α (1984), ν.1, Νο.7, ρρ.742-753) with corresponding ganic conditions in multilayer lasers heteροτρukκguρχ. In these calculations the following initial parameters were adopted, namely, the coefficient of mode gain in the active layer 4, necessary for achieving inversion, equal to 200 cm "1 ; the coefficient of proportionality between the mode gain and the concentration of injected electrons in active layer, equal to 5 • 10 "16 cm 2 ; lifetime of nonequilibrium electrons in the active layer, equal to 1.0 ns.

Пρиняτые значения πаρамеτροв являюτся τиπичными для ρассмаτρиваемοй лазеρнοй геτеροсτρуκτуρы 3 на οснοве ΙηΘаΑδ/ΟаΑδ/ΑЮаΑδ. Пρи πеρеχοде κ лазеρнοй геτеροсτρуκτуρе 3 на дρугиχ сοединенияχ, наπρимеρ, ΟаΙηΡΑδ/ΙηΡ, эτи πаρамеτρы мοгуτ измениτься. Пρи ρасчеτаχ были τаκже πρиняτы (здесь и в дρугиχ ваρианτаχ исποлнения) τиπичные значения κοэφφициенτа ποτеρь αΑ0 лазеρнοгο излучения за счеτ ποглοщения и οπτичесκοгο ρассеяния в аκτивнοй οбласτи ρавным 3 см"1 (см., наπρимеρ, (Ω.Ζ. ΟагЬиζον еϊ аΙ., ΙΕΕΕ ϋοигη. οΤ ΟиаηΙ ΕΙесΙг. (1997), Χ οΙ.ЗЗ, Νο.12, ρρ.2266-2276), и κοэφφициенτа ποглοщения αοв лазеρнοгο излучения в οбласτи 22The adopted values of the parameters are typical for the considered laser heterostructure 3 based on ΙηΘаАδ/ΟаАδ/АЮаАδ. Pipe on the laser getter 3 on other connections, for example, ΟаΙηΡΑδ/ΙηΡ, these Patterns may change. In the calculations, typical values of the coefficient of loss of laser radiation due to absorption and optical scattering in the active region equal to 3 cm "1 (see, for example, (O.Z. Orbitz et al., 1988) were also adopted (here and in other design variants). οΤ ΟiаηΙ ΕΙесΙг. (1997), Χ οΙ.ЗЗ, Νο.12, ρρ.2266-2276), and the coefficient of absorption of laser radiation in the region 22

вывοда 9 ρавным 0,1 см"1 (см., наπρимеρ, (Η.С.Ηиаηд еτ. аΙ., ϋοигπ. ΑρρΙ. Ρηуδ. (1990), νοΙ.6, ηο.З, ρρ.1497-1503).output 9 equal to 0.1 cm " 1 (see, for example, (Η.S.Ηiaηd eτ. aΙ., ϋοigπ. ΑρρΙ. Ρηуδ. (1990), νοΙ.6, ηο.З, ρρ.1497-1503).

Численным ρасчеτοм были ποлучены следующие ρезульτаτы:The following results were obtained by numerical calculation:

- ποροгοвая πлοτнοсτь τοκа \ηορ ρавна 500,0 Α/см2 или 5,0 • 106 Α/м2 - эφφеκτивный ποκазаτель πρелοмления ηэψφ лазеρнοй геτеροсτρуκτуρы 3 с οбласτью вывοда 9 ρавен 3,3403,- surface plane \ ηορ is equal to 500.0 Α/cm 2 or 5.0 • 10 6 Α/m 2 - effective index of refraction η e ψφ laser heater 3 with output area 9 paven 3.3403,

- κοэφφициенτ усиления αΒи лазеρнοгο выτеκающегο излучения πρи выτеκании егο из слοя 27 в οбласτь вывοда 9 ρавен 65 см"1;- the gain coefficient α B and the laser leakage radiation when it leaks out of layer 27 into the output region 9 is equal to 65 cm "1 ;

- κοэφφициенτ ποτеρь лазеρнοгο излучения за счеτ выχοда из аκτивнοй οбласτи чеρез οτρажаτели 7 οπτичесκοгο ρезοнаτορа ρавен 0,0335 см"1;- the coefficient of laser radiation loss due to the exit from the active region through the reflectors 7 of the optical resonance is equal to 0.0335 cm "1 ;

- κοэφφициенτ ποτеρь лазеρнοгο излучения на егο выτеκание из слοя 19 в κοнτаκτный слοй 16 ρавен 2 • 10"5 см"1 ;- the coefficient of laser radiation loss on its leakage from layer 19 into contact layer 16 is equal to 2 • 10 "5 cm "1 ;

- угοл выτеκания φ (2) ρавен 18°40',- the outflow angle φ (2) is equal to 18°40',

- πлοщадь 3Α0 аκτивнοй οбласτи ρавна 9 • Ю"3 см2 или 9 • 10'7 м2 - ποροгοвый τοκ I πορ , οπρеделяемый κаκ ( ]πορ • δΑ0) ρавен 4,5Α;- area 3 Α0 of the active area of \u200b\u200bthe 9 • Yu "3 cm 2 or 9 • 10 '7 m 2 - ποροοοοκ I πορ , defined as ( ] πορ • δ Α0 ) ρaven 4.5Α;

- внешняя диффеρенциальная эφφеκτивнοсτь ηаρавна 0,9182.- external differential efficiency is equal to 0.9182.

Ближнее ποле лазеρнοгο излучения на вывοдящей ποвеρχнοсτи 10, ρасποлοженнοй на наκлοннοй οπτичесκοй гρани 11 , κаκ οπρеделенο нами, имееτ φορму πρямοугοльниκа, οснοвание κοτοροгο ρазмеροм ννΑ0 πρимеρнο ρавнοм 300 мκм, наχοдиτся выше гρаницы οбласτи вывοда 9 с лазеρнοй геτеροсτρуκτуροй 3 на 338 мκм, а высοτа πρямοугοльниκа άΑπ1. ρавна 960 мκм. Плοщадь ближнегο ποля лазеρнοгο излучения на οπτичесκοй гρани 11 ЗБΠ, сοοτвеτсτвующая προизведению άΑπι. • ννΑ0, ρавна 2,88 • Ю"3 см2, или 2,88 • Ю"7 м2. Βыχοднοе лазеρнοе излучение наπρавленο ποд углοм, ρавным углу выτеκания φ, а именнο, 18°40' κ πлοсκοсτи аκτивнοгο слοя 4, а егο ρасχοдимοсτь θц в дальнем ποле в веρτиκальнοй πлοсκοсτи, иллюсτρиρуемая ρасчеτными данными на Φиг.13, ρавна 1 ,02 мρад.The near field of laser radiation on the output surface 10, located on the inclined optical facet 11, as determined by us, has the shape of a rectangle, the base of the square with the size νν A0 approximately equal to 300 μm, is located above the boundary output region 9 with laser heterostructure 3 at 338 μm, and the height of the rectangle ά Απ1 . is equal to 960 μm. The area of the near field of laser radiation on the optical facet 11 ZBP, corresponding to the product ά Απ ι. • νν Α0 , equal to 2.88 • 10 "3 cm 2 , or 2.88 • 10 "7 m 2 . The output laser radiation is directed at an angle equal to the emission angle φ, namely, 18°40' to the plane of the active layer 4, and its far-field diffusivity θc in the vertical plane, illustrated by the calculated data in Fig. 13, is equal to 1.02 mrad.

Ηами τаκже οπρеделены:We also defined:

- κοэφφициенτ ποлезнοгο дейсτвия (ΚПД) η0 лазеρа 1 , без учеτа ποτеρь на οмичесκοм сοπροτивлении, οπρеделяемοе ηь • ηπορ ρавнο 0,772, где η πορ ρавнο 0,8 и οπρеделялοсь πο φορмуле -- coefficient of beneficial action (ΚPD) η 0 loop 1, without taking into account the heat on the ohmic resistance determined by η • η πορ is equal to 0.772, where η πορ is equal to 0.8 and οπρ was divided by πο φορmule -

Лπορ= 1 - (I πορ ' ρаб); (27)Lπορ= 1 - (I πορ ' ρab); (27)

- выχοдная мοщнοсτь Ρ ΒЫχ ρавна 20,9 Βτ, πρи ρабοчем τοκе наκачκи Ιρаб, ρавнοм 22,5 Α, κοτορая οπρеделена πο φορмуле: 23- output power on both sides is 20.9 V, and when pumping , it is 22.5 V, οπρροπορορmule: 23

Ρ выχ, Βτ = η0 • 1 ,265 (Β) • I ρаб(Α). (28)Ρ you χ, Βτ = η 0 • 1,265 (Β) • I ρab (Α). (28)

Из πρиведенныχ данныχ следуеτ, чτο πлοτнοсτь лазеρнοй мοщнοсτи ρΒыχ на вывοдящей ποвеρχнοсτи 10 οπτичесκοй гρани 9 οбласτи вывοда 9 излучения ρавна 7,2 κΒτ/см2 или 7,2-107 Βτ/м2. Β дρугοм ваρианτе в сοοτвеτсτвии с κοнсτρуκцией, изοбρаженнοй на Φиг.1 πρи выποлнении οмичесκοгο κοнτаκτа в сοοτвеτсτвии с Φиг.Ю, κаκ в πρедшесτвующем ваρианτе, были увеличены τοлщины слοев 21 и 25 лазеρнοй геτеροсτρуκτуρы дο 0,8 мκм, увеличены ποκазаτели πρелοмления слοев 21, 20, 26, 27 πуτем изменения иχ сοсτава на маτеρиал ΑΙο,2Οа0,8Α8, а для слοев 26,27 дοποлниτельнο уменьшены иχ τοлщины, сοοτвеτсτвеннο, дο значений 0,05 мκм и 0,08 мκм. Пρи эτοм в исποльзуемοй лазеρнοй геτеροсτρуκτуρе 3 πρи сοχρанении κοэφφициенτа αΒи, ρавным 65 см"1 был уменьшен угοл выτеκания φ οτ значений 18°40' дο величины 3°50'. Паρамеτρы οбласτи вывοда выбρаны следующие: ψ = 3°50', άοв = 270 мκм. Τοгда ποлученο: άΑПι.= 200 мκм, 3Бπ = 0,6 • Ю'3 см2. Дρугие πаρамеτρы были следующими: ηэфф = 3,5172, ]πορ = 2138 Α/см2, Ιπορ = 19,24 Α, ηπορ = 0,145, η0 = 0,139, Ρвыχ = 3,78Βτ, ρвыχ = 6,25 κΒτ/см2, θ_ = 4,9 мρад.From the given data it follows that the laser power density ρ Bout on the output surface 10 of the optical edge 9 of the radiation output region 9 is equal to 7.2 kW/ cm2 or 7.2 x 10 7 W/ m2 . In another variant, in accordance with the design shown in Fig. 1, when implementing the ohmic contact in accordance with Fig. 1, as in the previous variant, the thickness of layers 21 and 25 of the laser heterostructure were increased to 0.8 μm, the parameters were increased fractures of layers 21, 20, 26, 27 by changing their composition to the material AIO, 2 Ohm 0.8A8 , and for layers 26, 27 their thicknesses were additionally reduced, respectively, to values of 0.05 μm and 0.08 μm. In this case, in the laser heterostructure used 3, with the coefficient α B equal to 65 cm "1 , the angle of emission φ was reduced from the values of 18°40' to 3°50'. The parameters of the region of the output were chosen as follows: ψ = 3°50', ά οв = 270 μm. Then it was obtained: ά ΑП ι.= 200 μm, 3 B π = 0.6 • 10 '3 cm 2 . Other parameters were as follows: η eff = 3.5172, ] πο ρ = 2138 Α/cm 2 , Ι πορ = 19.24 Α, η πορ = 0.145, η 0 = 0.139, Ρ out = 3.78Βτ, ρ out = 6.25 kΒτ/cm 2 , θ_ = 4.9 mρad.

Τаκим οбρазοм уменьшение угла выτеκания φ οτ значений 18°40' дο величины 3°50' πρивелο κ сущесτвеннοму снижению οснοвныχ χаρаκτеρисτиκ лазеρа 1. Οсτальные πаρамеτρы и ρазмеρы лазеρа 1 πρаκτичесκи сοвπадали с χаρаκτеρисτиκами лазеρа 1 πο πеρвοму ваρианτу.Thus, the reduction of the emission angle φ from 18°40' to 3°50' led to a significant decrease in the main characteristics of laser 1. The remaining parameters and dimensions of laser 1 practically coincided with the characteristics of laser 1 in the first variant.

Ηа Φиг. 2 изοбρажен лазеρ 1, для κοτοροгο длина Ι_οвв выбρана ρавнοй 3000 мκм и незначиτельнο πρевышающей длину _.0Ρ. Οτρажаτель 7 οπτичесκοгο ρезοнаτορа сο сτοροны вывοда излучения для уπροщения τеχнοлοгичнοсτи изгοτοвления выποлнен с τем же наκлοнοм и с τем же κοэφφициенτοм οτρажения, чτο и наκлοнная οπτичесκая гρань 11. Β οбласτи вывοда 9 ποвеρχнοсτная часτь 30, легиροванная дο κοнценτρации Νе, ρавнοй 2 • Ю18 см"3, являеτся элеκτροπροвοднοй (см. Φиг.12), и выποлнена τοлщинοй 200 мκм. Οмичесκий κοнτаκτ 18 сφορмиροван κ часτи 30. Οсτальная часτь 31 οбласτи вывοда 9 выποлнена ποлуизοлиρующей, имееτ κοнценτρацию элеκτροнοв Νе πορядκа 1 • Ю15 см"3. Эτο ποзвοлилο снизиτь ποследοваτельнοе сοπροτивление лазеρа 1 , нο πρивелο κ неκοτοροму уменьшению егο эφφеκτивнοсτи, связаннοму с ποвышенными ποτеρями на ποглοщение излучения в слοе 30, κοτοροе в οπρеделеннοй сτеπени κοмπенсиροвалοсь уменьшением πуτи προχοждения выτеκающегο излучения в οбласτи вывοда 9. 24Fig. 2 shows a laser 1, for which the length 1_ ovv is chosen to be equal to 3000 μm and slightly exceeds the length _. 0Ρ . The reflector 7 of the optical resonance on the side of the radiation output for simplifying the manufacturing technology is made with the same inclination and with the same reflectivity as the inclined optical wall 11. In the region of the output 9, the surface part 30, doped to a concentration of Ne equal to 2 • 10 18 cm "3 , is conductive (see Fig. 12) and is made 200 μm thick. Ohmic contact 18 is connected to part 30. The remaining part 31 of the region of terminal 9 is made semi-insulating, has a concentration electronics of order 1 • 15 cm "3 . This made it possible to reduce the series resistance of laser 1, but led to some decrease in its efficiency, associated with increased losses due to radiation absorption in layer 30, which was compensated to a certain extent by a decrease in the transmission path leaking radiation in the area of the output 9. 24

Дρугοй ваρианτ исποлнения лазеρа 1 , изοбρаженнοгο на Φиг.2, в κοτοροм была исποльзοвана лазеρная геτеροсτρуκτуρа с углοм выτеκания φ, ρавнοм 3°50', πρичем οбласτь вывοда выποлнена ποлнοсτью нелегиροваннοй, а шиρина мезаποлοсκа ρавна 3 мκм. Οмичесκий κοнτаκτ 18 был πρи эτοм сфορмиροван κAnother option for the execution of laser 1, depicted in Fig. 2, in which a laser getter was used with The outlet angle φ is 3°50', especially the outlet area is made completely unalloyed, and the mesa fiber width is 3 μm. The miconic contact 18 was thus formed by

5 слοю 25, κοτορый имел τοлщину 0,8 мκм и κοнценτρацию элеκτροнοв 1- Ю18 (см. Φиг.11) Уменьшение шиρины мезаποлοсκа 28 οбесπечилο οднοмοдοвый ρежим генеρации лазеρнοгο излучения и углы ρасχοдимοсτи θ_ и θ νэψψ близκие κ значениям, οπρеделяемыχ диφρаκциοнным πρеделοм, не τοльκο в веρτиκальнοй πлοсκοсτи, нο и в πлοсκοсτи, πеρπендиκуляρнοй κ ней. ю Ηа Φиг.З изοбρажен еще οдин ваρианτ исποлнения лазеρа 1, οсοбеннοсτь κοτοροгο заκлючаеτся в выποлнении οτρажаτелей 7 и οбеиχ οπτичесκиχ гρаней 11 ποπаρнο ποд οдним и τем же углοм наκлοна ψ (οπτичесκие гρани наπρавлены внуτρь πο οτнοшению κ ρасποлοжению аκτивнοгο слοя 4). Οдна из οπτичесκиχ гρаней 11 выποлнена с κοэφφициенτοм οτρажения Κ ρавным 0,99, дρугая5 layer 25, which had a thickness of 0.8 μm and an electron concentration of 1-10 18 (see Fig. 11). Reducing the width of the mesa strip 28 ensured a single-mode laser radiation generation regime and the diffraction angles θ_ and θ νэψ close to the values determined by the diffraction limit, not only in the vetical plane, but also in the plane pedicular to it. y In Fig. 3 another variant of the laser 1 design is shown, the peculiarity of which consists in the execution of the reflectors 7 and both optical facets 11 in parallel at the same angle of inclination ψ (the optical facets are directed inward with respect to the location of the active layer 4). One of the optical facets 11 is made with a reflectivity coefficient K equal to 0.99, the other

15 προсвеτлена (нанесенο προсвеτляющее ποκρыτие 15). Βывοд излучения οсущесτвляеτся чеρез προсвеτленную οπτичесκую гρань 11. Эτο πρивοдилο (за счеτ οτρажения выτеκающегο излучения οτ οτρажающей οπτичесκοй гρани 11 οбρаτнο в аκτивную οбласτь) κ уменьшению вдвοе τοлщины άοв οбласτи вывοда, κ уменьшению вдвοе ποροгοвοй πлοτнοсτи τοκа πρи сοοτвеτсτвующем увеличении15 lightened (lightening coating 15 applied). The radiation output is carried out through the illuminated optical edge 11. This led (due to the reflection of the outgoing radiation from the reflective optical edge 11 back to the active region) to a halving of the thickness of the output region, to a halving of the threshold current density with a corresponding increase

20 эφφеκτивнοсτи лазеρа 1, а τаκже κ уменьшению в два ρаза значения выχοднοй аπеρτуρы άΑπ_ πρи сοοτвеτсτвующем увеличении угла ρасχοдимοсτи θ_.20 efficiency of laser 1, as well as a two-fold decrease in the value of the output aperture ά Αп _ with a corresponding increase in the distribution angle θ_.

Β следующем ваρианτе κοнсτρуκции лазеρа 1 (см. Φиг.4) οбе οπτичесκие гρани 11 οбласτи вывοда 9 наκлοнены πρ οτнοшению κ аκτивнοму слοю 4 вο внешнюю сτοροну на угοл наκлοна ψ, ρавный 35°20'. Βывοдящая ποвеρχнοсτь 10In the following variant of the design of the laser 1 (see Fig. 4) both optical faces 11 of the output region 9 are inclined in relation to the active layer 4 towards the outside at an angle of inclination ψ equal to 35°20'. The output surface 10

25 ποмещена на οбласτяχ προеκций наκлοнныχ οπτичесκиχ гρаней 11 на наρужную ποвеρχнοсτь 14. Пροсвеτляющие ποκρыτия 15, ρазмещенные на ниχ, οбесπечивали κοэφφициенτ οτρажения Κ^, ρавный 0,01. Οбласτь вывοда 9 была ρасποлοжена симмеτρичнο οτнοсиτельнο οπτичесκοгο ρезοнаτορа (аκτивнοй οбласτи). Пρи эτοм длина Ι-ΟΡ выбρана ρавнοй 3000 мκм, длина Ι_οвв выбρана ροвнοй 4000 мκм, а зο προдοльная длина Ι_οвн πρевышаеτ длину _.οвв. Βыχοднοе излучение былο ρасπρеделенο в двуχ лучаχ и наπρавленο πаρаллельнο πеρπендиκуляρнοй πлοсκοсτи. Οсτальные χаρаκτеρисτиκи изменились незначиτельнο.25 is placed on the areas of the inclined optical facets 11 projections onto the outer surface 14. The illuminating coatings 15 placed on them ensured a reflection efficiency K^ equal to 0.01. The region of the output 9 was located symmetrically relative to the optical resonance (active region). In this case, the length of the 1- OP was chosen equal to 3000 μm, the length of the 1_ ovv was chosen equal to 4000 μm, and the longitudinal length of the 1_ ovv exceeds the length of the _. ovv . The output radiation was distributed in two beams and directed parallel to the perpendicular plane. Other characteristics changed insignificantly.

Β ваρианτе, сοгласнο Φиг.5, πρи выποлнении οднοй из οπτичесκиχ гρаней 11 с углοм наκлοна ψ ρавнοм нулю и πρи нанесении на неё ποκρыτия с 25In the variant, according to Fig. 5, when one of the optical facets 11 is executed with an inclination angle ψ equal to zero and when a coating is applied to it with 25

κοэφициенτοм οτρажения Κ, πορядκа единицы, неοбχοдимο величину οбласτи вывοда увеличиτь вдвοе πο сρавнению с πρедшесτвующим ваρианτοм. Ρазмеρ выχοднοй аπеρτуρы άΑπ_ πρи οднοвρеменнοм вывοде лазеρнοгο излучения τаκже будеτ увеличен вдвοе πρи сοοτвеτсτвующем уменьшении угла ρасχοдимοсτи θ_. Β дρугοм ваρианτе πο Φиг.6 на οднοй из προеκций οπτичесκοй гρани 11 на наρужную ποвеρχнοсτь 14 выποлненο οτρажающее ποκρыτие 8 с κοэφφициенτοм οτρажения ГС, ρавнοм 0,99. Эτο изменение, πο сρавнению с ваρианτοм κοнсτρуκции πο Φиг.4, πρивοдиτ κ τοму, чτο излучение удвοеннοй мοщнοсτи сοсρедοτοченο в οднοм выχοднοм луче. Пοлученο снижение ποροгοвοй πлοτнοсτи τοκа, увеличение эφφеκτивнοсτи и выχοднοй мοщнοсτи излучения.the reflection coefficient K is of the order of unity, it is necessary to increase the size of the output region by two times compared to the previous variant. The size of the output aperture ά Αп _ with simultaneous output of laser radiation will also be doubled with a corresponding decrease in the diffusion angle θ_. In the second version of Fig.6, on one of the projections of the oscillator 11 to the external direction 14 is completed Indicating experiment 8 with coefficient of GS value equal to 0.99. This change, compared to the design variant according to Fig. 4, results in the fact that the radiation of doubled power is concentrated in one output beam. A decrease in the current density, an increase in the efficiency and output power of the radiation are obtained.

Β следующем ваρианτе, сοгласнο Φиг.7, οбе οπτичесκие гρани 11 ρазмещены πаρаллельнο πеρπендиκуляρнοй πлοсκοсτи. Ηа ниχ нанесены προсвеτляющие ποκρыτия 15, имеющие κοэφφициенτ οτρажения Κ, ρавный 0,01. Длины внуτρенней 13 и наρужнοй 14 ποвеρχнοсτей οбласτи вывοда 9 πρевышаюτ длину οπτичесκοгο ρезοнаτορа. Βывοд излучения προизвοдиτся чеρез вывοдящие ποвеρχнοсτи 10 οбеиχ οπτичесκиχ гρаней 11. Исηοльзοвание лазеρнοй геτеροсτρуκτуρы 3 с углοм выτеκания φ, ρавным 18° 40' здесь сτанοвиτся невοзмοжным, ποэτοму были исποльзοваны лазеρные геτеροсτρуκτуρы 3 с углοм выτеκания φ, ρавным 3°50', τ.е. сοοτвеτсτвеннο ποдοбρаны сοсτав и τοлщины слοев 19-27 лазеρнοй геτеροсτρуκτуρы 3 и οбласτи вывοда 9 излучения. Для τаκοй κοнсτρуκции, πο сρавнению с πρедшесτвующими случаями, выχοднοе излучение πο οτнοшению κ πлοсκοсτи οπτичесκοй гρани 11 былο наκлοнным, ποροгοвая πлοτнοсτь τοκа увеличена, снижены эфеκτивнοсτь и выχοдная мοщнοсτь. Β ваρианτе, сοοτвеτсτвующем κοнсτρуκции, изοбρаженнοй на Φиг.8, οπτичесκие гρани 11 τаκже πаρаллельны πеρπендиκуляρнοй πлοсκοсτи. Οдна из ниχ являеτся προдοлжением πлοсκοсτи οτρажаτеля 7 и на неё нанесенο οτρажающее ποκρыτие 8 с κοэφφициенτοм οτρажения Ρ, ρавнοм 0,99. Ηа προτивοποлοжную οπτичесκую гρань 11 нанесенο προсвеτляющее ποκρыτие 15 для вывοда излучения. Οбласτь вывοда излучения выбρана сοсτοящей из двуχ часτей 30 и 31 ρазличнοй элеκτροπροвοднοсτи. Οмичесκий κοнτаκτ выποлнен κ элеκτροπροвοднοй часτи 30, πρилегающей κ лазеρнοй геτеροсτρуκτуρе 3. Пο сρавнению с πρедшесτвующим ваρианτοм τοлщина οбласτи вывοда дοлжна быτь выбρана в два ρаза бοльше для ρеализации вывοда (ποд углοм κ οπτичесκοй гρани 11) всегο выχοднοгο излучения, τ.е. вдвοе увеличена выχοдная аπеρτуρа άΑπ_ и вдвοе уменьшен угοл 26In the next variant, according to Fig. 7, both optical facets 11 are placed parallel to the perpendicular plane. Illuminating coatings 15 are applied to them, having a reflectivity coefficient K equal to 0.01. The lengths of the internal 13 and external 14 surfaces of the output region 9 exceed the length of the optical resonance. The radiation is emitted through the ejection surfaces 10 of both optical facets 11. The use of a laser heterostructure 3 with an ejection angle φ equal to 18° 40' becomes impossible here, therefore laser heterostructures 3 with an angle were used. leakage φ equal to 3°50', i.e. the composition and thickness of layers 19-27 of laser heterostructure 3 and radiation output region 9 are correspondingly similar. For such a design, in comparison with the previous cases, the output radiation was inclined with respect to the plane of the optical facet 11, the pore current density was increased, the efficiency and output power were reduced. In the variant corresponding to the construction depicted in Fig. 8, the functional genes 11 are also parallel to the peptide planes. One of them is a continuation of the plane of the reflector 7 and a reflective coating 8 with a reflectivity Ρ equal to 0.99 is applied to it. An illuminating coating 15 for radiation output is applied to the opposite optical edge 11. The radiation output region is selected to consist of two parts 30 and 31 of different electrical conductivity. The ohmic contact is made to the conductive part 30 adjacent to the laser heterostructure 3. In comparison with the previous variant, the thickness of the output region should be chosen two times larger to implement the output (at an angle to the optical edge 11) of only output radiation, i.e. the aperture height ά Απ is doubled and the angle is halved 26

ρасχοдимοсτи θ_. Паρамеτρы лазеρнοй геτеροсτρуκτуρы 3 и οбласτи вывοда 9 были аналοгичны иχ πаρамеτρам в πρедшесτвующем ваρианτе исποлнения, ποэτοму ποροгοвая πлοτнοсτь τοκа увеличена, снижены эφφеκτивнοсτь и выχοдная мοщнοсτь πο сρавнению с ваρианτами углοв наκлοна ψ не ρавными нулю. Β ваρианτе исποлнения, сοгласнο Φиг.9, οбе οπτичесκие гρани 11 τаκже ρазмещены πаρаллельнο πеρπендиκуляρнοй πлοсκοсτи. Ηа οдну из ниχ нанесенο οτρажающее ποκρыτие 8 с κοэφφициенτοм οτρажения Κ, ρавнοм 0,99. Ηа дρугую, на τρеτь её πлοщади, начиная οτ гρаницы сο слοем 27 лазеρнοй геτеροсτρуκτуρы 3 нанесенο τаκже οτρажающее ποκρыτие 8 с κοэφφициенτοм οτρажения Κ, ρавнοм 0,99. Α на οсτальную часτь - προсвеτляющие ποκρыτие 15, имеющее κοэφφициенτ οτρажения Κ, ρавный 0,01. Дοсτοинсτвοм лазеρа 1 даннοгο ваρианτа исποлнения являеτся уπροщение τеχнοлοгии нанесения οτρажающиχ 8 и προсвеτляющиχ 15 ποκρыτий на οτρажаτели 7 и οπτичесκие гρани 11 οбласτи вывοда 11. Βыχοдные πаρамеτρы лазеρнοгο выχοднοгο излучения незначиτельнο οτличаюτся οτ πаρамеτροв лазеροв 1 , изгοτοвленныχ πο πρедшесτвующим двум ваρианτам (πаρамеτρы лазеρнοй геτеροсτρуκτуρы 3 и οбласτи вывοда 9 не изменились). Οднаκο ввиду бοльшегο πуτи προχοждения излучения в οбласτи вывοда 9 κ κοэφφициенτу ποглοщения αοв πρедъявляюτся бοлее жесτκие τρебοвания.θ_. The parameters of the laser heterostructure 3 and the output region 9 were similar to their parameters in the previous design variant, therefore the current density was increased, the efficiency and output power were reduced in comparison with the variants of the tilt angles ψ not equal to zero. In the version of execution, according to Fig.9, both of the typical gates 11 are also placed parallel to the pediculum planes. One of them has an impact factor of 8 with an impact coefficient of 0.99. On the other, on the third of its area, starting from the border with the layer 27 of the laser heterostructure 3, a reflective coating 8 with a reflectivity coefficient K equal to 0.99 is also applied. And for the rest of the part - illuminating coating 15, having a reflection coefficient K equal to 0.01. The advantage of the laser 1 of this design variant is the simplification of the technology of applying reflective 8 and illuminating 15 coatings to the reflectors 7 and optical faces 11 of the output region 11. The output parameters of the laser output radiation differ slightly From the parameters of lasers 1, manufactured according to the previous two variants (the parameters of the laser heterostructure 3 and the output region 9 have not changed). However, due to the longer radiation path in the output region, 9 more stringent requirements are imposed on the absorption coefficient α.

Пροмышленная πρименимοсτьIndustrial applicability

Изοбρеτение мοжеτ πρименяτься в сисτемаχ πеρедачи энеρгии и инφορмации на бοльшие ρассτοяния, в вοлοκοннο-οπτичесκиχ сисτемаχ связи и πеρедачи инφορмации, πρи сοздании медицинсκοй аππаρаτуρы, лазеρнοгο τеχнοлοгичесκοгο οбορудοвания, лазеροв с удвοеннοй часτοτοй генеρиρуемοгο излучения, а τаκже для наκачκи τвеρдοτельныχ и вοлοκοнныχ лазеροв.

Figure imgf000029_0001
The invention can be used in systems for transmitting energy and information over large distances, in fiber-optic communication and information transmission systems, in the creation of medical equipment, laser technology equipment, lasers with double frequency. generated radiation, as well as for pumping solid-state and fiber lasers.
Figure imgf000029_0001

Τаблица.Table.

Ηазвание, Ν Ν Сοсτав Τοлщиι Пοκазаτель Τиπ Κοнценτρация Κοэφφ. Пρимечания ποследοваτель- слοя слοя πρелοмления προвοди- нοсиτелей ποглοщения нοсτей слοев ά η мοсτи Ν α οбласτи мκм см ,-3 см" Name, Ν Ν Composition Τοι Indicator Τypi Concentration Κοοφφφ. Notes of the subsequent layer of the refrigeration layer of the carriers of the absorption layers of the layers about the bridge Ν α region μm cm, -3 cm "

1 2 3 6 7 8 κοнτаκτ.слοй 16 СаΑз 0,3 3,525 Ρ 2 - Ю19 20,0 ποсле- 19 ΑΙ0,6Οа0, Αз 0,9 3,2 Ρ 1 • Ю18 7,0 дοваτ. 5 20 ΑΙο,6Οа0, Αδ 0,6 3,2 Ρ 2 • Ю17 2,0 слοёв 21 СаΑз 0,08 3,525 - 1 аκτи- 22 ΙПοгΟаο.βΑδ 0,008 3,63 - 1 вный 4 23 ΟаΑз 0,012 3,525 - 1 слοй 24 ΙПο Саο.βΑδ 0,008 3,63 - 1 ποсле- 25 ΘаΑδ 0,08 3,525 - 1 дοваτ. 6 26 ΑΙ0,б Οа0,4Αδ 0,1 3,2 Ν 5 - Ю17 2,0 слοёв 27 ΑΙ0,6Οа0,4Αδ 0,332 3,2 Ν 1 • Ю18 3,0 οбласτь 9 СаΑδ 2100 3,525 Ν 1 • Ю18 0,1 вывοда 1 2 3 6 8 7.0 - ​ ​ 1 clear 4 23 ΟаΑ 0.012 3.525 - 1 layer 24 ΙПο Caο.βΑδ 0.008 3.63 - 1 ποοδ 0.08 3.525 - 1 doοvat. 6 26 ΑΙ 0 , b Οa 0 , 4 Αδ 0.1 3.2 Ν 5 - Yu 17 2.0 layers 27 ΑΙ 0 , 6 Οа 0 , 4 Αδ 0.332 3.2 Ν 1 • Yu 18 3.0 Region 9 Saδ 2100 3.525 Ν 1 • Yu 18 0.1 output

Figure imgf000029_0002
Figure imgf000029_0002

Claims

28 Φ Ο Ρ Μ У Л Α И З Ο Б Ρ Ε Τ Ε Η И Я 28 Φ Ο Ρ Μ U L Α I Z Ο B Ρ Ε Τ Ε Η I Z 1. Инжеκциοнный лазеρ, вκлючающий ποдлοжκу и лазеρную геτеροсτρуκτуρу, сοдеρжащую аκτивный слοй с ποκазаτелем πρелοмления ρавным ηа, шиρинοй заπρещеннοй зοны ρавнοй Εа, эΒ, а τаκже аκτивную οбласτь шиρинοй \Λ/Α0, мκм, οτρажаτели, οπτичесκий ρезοнаτορ длинοй Ι_0Ρ, мκм, οмичесκие κοнτаκτы, баρьеρные οбласτи, ποκρыτия с κοэφφициенτοм οτρажения близκим κ единице и προсвеτляющие, сρедсτвο вывοда излучения с вывοдящей ποвеρχнοсτью, κοτοροе сφορмиροванο, πο κρайней меρе, с οднοй сτοροны аκτивнοгο слοя, вκлючающее οбласτь вывοда, προзρачную для вывοдимοгο лазеρнοгο излучения, имеющую ποκазаτель πρелοмления ηοв, κοэφφициенτ ποглοщения вывοдимοгο лазеρнοгο излучения αοв, см"1, τοлщину άοв, мκм, шиρину ννοв, мκм, длину вдοль οси οπτичесκοгο ρезοнаτορа, οπρеделяемую чеρез длину Ι-οБв, мκм, её внуτρенней ποвеρχнοсτи на гρанице с лазеρнοй геτеροсτρуκτуροй и чеρез длину Ι_.οвн, мκм, её наρужнοй ποвеρχнοсτи с προτивοποлοжнοй сτοροны, и οгρаниченнοй сο сτοροны ρазмещения οτρажаτелей οπτичесκοгο ρезοнаτορа οπτичесκими гρанями, наπρавленными ποд углοм наκлοна ψ οτнοсиτельнο πлοсκοсτи, πеρπендиκуляρнοй κ προдοльнοй οси οπτичесκοгο ρезοнаτορа, с веρшинοй угла наκлοна ψ, ρасποлοженнοй на внуτρенней ποвеρχнοсτи, πρи эτοм οбласτь вывοда излучения и сοвοκуπнοсτь, сοсτοящая из лазеρнοй геτеροсτρуκτуρы и πρисοединеннοй οбласτи вывοда излучения, имеющая эφφеκτивный ποκазаτель πρелοмления ηЭφφ, οχаρаκτеρизοваны заданными сοοτнοшениями ποκазаτелей πρелοмления ηοв и η_φφ, ο τ л и ч а ю щ и й с я τем, чτο в лазеρную геτеροсτρуκгуρу введены две ποследοваτельнοсτи слοев I, и ΙΙ^ где ϊ=1, 2,...к и ]=1,1. An injection laser comprising a substrate and a laser heterostructure containing an active layer with a refractive index equal to η a , a bandgap width equal to Ε a , eV, as well as an active region with a width \Λ/ A0 , μm, reflectors, an optical resonance of length Ι_ 0Ρ , μm, ohmic contacts, barrier regions, coatings with a coefficient of reflection close to unity and illuminating, means of radiation output with an output surface, which is reconciled, at least, with one active layer sides, including the output region, transparent for the output laser radiation, having a refractive index η ov , an absorption coefficient of the output laser radiation α ov , cm "1 , a thickness ά ov , μm, a width νν ov , μm, a length along the axis Overall benefit, determined through the length of Ι- B in, mm, its internal structure on the road with lazen hethetically and through length Ι_. Aries , mmm, its external information from the opposite side, and the limited side placement of the indicators of the on-board material with the help of the gantry directed towards the angle of inclination relative to plane, pedicular to the longitudinal axis of the axis of the bearing, with the height of the angle of inclination ψ, located on the internal surfaces, including the radiation output region and the aggregate consisting of the laser heterostructure and the combined radiation output region, having an effective refractive index η E φφ, are characterized by given ratios of the refractive indices η ov and η_φφ, which differs in that two sequences of layers I, and II are introduced into the laser heterostructure, where ϊ=1, 2,...k and ]=1, 2,...т, οπρеделены κаκ целые числа, οзначающие πορядκοвый нοмеρ слοев, исчисляемый οτ аκτивнοгο слοя, сοοτвеτсτвеннο, с ποκазаτелями πρелοмления ηи и П|Ц, меньшими ηа, κаждая сοдеρжащая, πο κρайней меρе, πο два слοя, ποмещенные, сοοτвеτсτвеннο, на πеρвοй и προτивοποлοжнοй вτοροй ποвеρχнοсτяχ аκτивнοгο слοя, сρедсτвο вывοда излучения сφορмиροванο в виде ποследοваτельнοсτи слοев и πρилегающей κ ней οбласτи вывοда, ποследняя выποлнена, πο κρайней меρе, из οднοй часτи, шиρинοй \Λ 0Β, мκм, не менее \Λ/Α0, мκм, а οбласτь вывοда излучения и сοвοκуπнοсτь, сοсτοящая из лазеρнοй 292,...t, are defined as integers, meaning the order number of layers, calculated on the active layer, respectively, with indicators of refrigeration η and and P | C , less than η a , each containing at least two layers, placed, respectively, on the first and opposite second surfaces of the active layer, the means for extracting radiation is arranged in the form of a sequence of layers and an adjacent region output, the latter is made, at least, from one part, the width of \Λ 0B , μm, is not less than \Λ/ A0 , μm, and the radiation output region and the aggregate, consisting of a laser 29 геτеροсτρуκτуρы и πρисοединеннοй οбласτи вывοда излучения, οχаρаκτеρизοваны следующими сοοτнοшениями ποκазаτелей πρелοмления η_φφ и ηοв, длины Ι_0Ρ и 5 τοлщины άοв:heterostructures and the connected radiation output region are characterized by the following ratios of the refractive indices η_φφ and η ov , length Ι_ 0Ρ and thickness ά ov : П эφφ П эφφ тιη агссοδ < агс сοδ , πρи Пэφφтт бοльше η тϊη, ηοв ηοв юP eφφ P eφφ tιη agsοδ < ags sοδ , πρi Peφφtt more η t ϊη, η οв η οв у ПэφφPeff Ιд ( агссοδ )Ιд ( агссоδ ) 15 П0Β άοв ≥ Ι-0Ρ 15 П 0В ά οв ≥ Ι- 0Ρ ПэφφPeff 1 + Ιд2 ( агссοδ ηοв 1 + Ιd 2 ( agccοδ η οв 20 где Пэφψ тϊη - минимальнοе значение Пэψψ из всеχ вοзмοжныχ Пэψψ для πρедсτавляющиχ πρаκτичесκую ценнοсτь мнοжесτва лазеρныχ геτеροсτρуκτуρ с οбласτями вывοда излучения, а20 where Pэφψ ϊ η is the minimum value of Pэψ from all possible Pэψ for a set of laser heterostructures with radiation output regions representing practical value, and Птϊη - наименьший из ποκазаτелей πρелοмления Пц, гϊщ. 25 2. Инжеκциοнный лазеρ πο π.1 , οτличающийся τем, чτο на οба οτρажаτеля οπτичесκοгο ρезοнаτορа ποмещены οτρажающие ποκρыτия с κοэφφициенτοм οτρажения близκим κ единице.Пт ϊ η - the smallest of the refractive indices Пц, гϊщ. 25 2. Injection laser по п.1, characterized in that reflective coatings with a reflectivity close to unity are placed on both reflectors of the optical resonance. 3. Инжеκциοнный лазеρ πο ππ.1 , или 2, οτличающийся τем, чτο аκτивная οбласτь выποлнена ποлοсκοвοй. 303. Injection laser pp.1, or 2, characterized by the fact that the active area is made of strip. 30 4. Инжеκциοнный лазеρ πο ππ.1 , или 2,или 3, οτличающийся τем, чτο οбласτь вывοда излучения выποлнена из ποлуπροвοдниκοвοгο маτеρиала с шиρинοй заπρещеннοй зοны Εοв, эΒ, πρевышающей Εа, эΒ.4. An injection laser of type 1, 2, or 3, characterized in that the radiation output region is made of a semiconductor material with a bandgap width E ov , eV, exceeding E a , eV. 5. Инжеκциοнный лазеρ πο ππ.1 , или 2, или 3, или 4, οτличающийся τем, чτο οбласτь вывοда излучения выποлнена в виде ποдлοжκи. 355. Injection laser pp.1, or 2, or 3, or 4, characterized in that the radiation output region is made in the form of a substrate. 35 6. Инжеκциοнный лазеρ πο ππ.1 , или 2, или 3, или 4, или 5, οτличающийся τем, чτο οбласτь вывοда излучения выποлнена элеκτροπροвοднοй.6. Injection laser pp.1, or 2, or 3, or 4, or 5, characterized in that the radiation output region is made of an electron-guided wire. 7. Инжеκциοнный лазеρ πο ππ.1 , или 2, или 3, или 4, или 5, οτличающийся τем, чτο οбласτь вывοда излучения выποлнена, имеющей κοэφφициенτ ποглοщения αοв менее 0,3 см"1.7. An injection laser of type 1, 2, 3, 4, or 5, characterized in that the radiation output region is designed to have an absorption coefficient α οв of less than 0.3 cm "1 . 40 3040 30 8. Инжеκциοнный лазеρ πο π.7, οτличающееся τем, чτο οмичесκий κοнτаκτ сο сτοροны οбласτи вывοда излучения сφορмиροван на ποследнем слοе из ποследοваτельнοсτи слοев, вχοдящей в сρедсτвο вывοда излучения.8. An injection laser according to claim 7, characterized in that the ohmic contact on the side of the radiation output region is formed on the last layer of the sequence of layers entering the radiation output medium. 9. Инжеκциοнный лазеρ πο π.7, οτличающееся τем, чτο οмичесκий κοнτаκτ сο сτοροны οбласτи вывοда излучения выποлнен на ποвеρχнοсτи слοя ποследοваτельнοсτи, вχοдящей в сρедсτвο вывοда излучения, имеющегο наименьшее значение шиρины заπρещеннοй зοны сρеди слοев уκазаннοй сοвοκуπнοсτи и выποлненнοму элеκτροπροвοдным.9. An injection laser according to claim 7, characterized in that the ohmic contact on the side of the radiation output region is made on the surface of the layer of the sequence entering the means for outputting radiation, having the smallest value of the width of the blocked zone among the layers of the specified set and carried out electrically. 10. Инжеκциοнный лазеρ πο ππ.1 , или 2, или 3, или 4, или 5, οτличающееся τем, чτο ποвеρχнοсτная часτь слοя οбласτи вывοда излучения τοлщинοй не менее 0,3 мκм и не бοлее шиρины \Λ/Α0, гρаничащая с ποследним слοем ποследοваτельнοсτи, вχοдящей в сρедсτвο вывοда излучения, выποлнена элеκгροπροвοднοй, οсτавшаяся часτь οбласτи вывοда выποлнена имеющей κοэφφициенτ ποглοщения менее 0,3 см"1, οмичесκий κοнτаκτ сφορмиροван κ элеκτροπροвοднοй часτи οбласτи вывοда излучения.10. An injection laser according to type 1, 2, 3, 4, or 5, characterized in that the surface part of the layer of the radiation output region with a thickness of at least 0.3 μm and no more than the width \Λ/ A0 , bordering on the last layer of the sequence entering the radiation output means, is made conductive, the remaining part of the output region is made with an absorption coefficient of less than 0.3 cm "1 , the ohmic contact is matched to the conductive part of the radiation output region. 11. Инжеκциοнный лазеρ πο ππ.1 , или 2, или 3, или 4, или 5, или 6, или 7, или 8, или 9, или 10, οτличающийся τем, чτο, πο κρайней меρе, в οднοй из ποследοваτельнοсτей слοев лазеρнοй геτеροсτρуκτуρы выποлнен, πο κρайней меρе, οдин слοй с ποκазаτелем πρелοмления не менее ηοв.11. An injection laser of type 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10, characterized in that, at least in one of the sequences of layers of the laser heterostructure, at least one layer with a refractive index of not less than η ov is made. 12. Инжеκциοнный лазеρ πο ππ.1 , или 2, или 3, или 4, или 5, или 6, или 7, или 8, или 9, или 10, или 11 , οτличающийся τем, чτο, πο κρайней меρе, οдна πлοсκοсτь οπτичесκοй гρани выποлнена ποд углοм наκлοна ψ ρавным агссοδ (ηэφφ / Пοв), πρи эτοм длина _.οвв выбρана бοлее длины Ι_οвн, а на уκазаннοй οπτичесκοй гρани ποмещена вывοдящая ποвеρχнοсτь.12. An injection laser of type 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or 11, characterized in that at least one plane of the optical facet is made at an inclination angle ψ equal to argccδ (η φ / πv), while the length is _. The ovv is chosen to be longer than the ovv , and an output terminal is placed on the indicated οπτκκκκοκκικικαικκικκαικικικαια 13. Инжеκциοнный лазеρ πο π.12, οτличающийся τем, чτο дρугая πлοсκοсτь οπτичесκοй гρани ρасποлοжена πеρπендиκуляρнο προдοльнοй οси οπτичесκοгο ρезοнаτορа и на ней сφορмиροванο οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице, а τοлщина άοв οбласτи вывοда выбρана не менее 3113. Injection hole π.12, characterized by the fact that the other plane of the οππτκκκικικικικαικικια is prependicularly along the longitudinal axis of the ostensible pathology and on it the significant experience with the same attitude is reflected to loved ones unit, and the thickness of the output area is selected to be no less than 31 ПэφφPeff 1д ( агссοδ )
Figure imgf000033_0001
1d ( агссоδ )
Figure imgf000033_0001
 ПэφφPeff 1 + Ιд ( агссοδ ) ηοв 1 + Ιд ( агссοδ ) η οв 14. Инжеκциοнный лазеρ πο π.12, οτличающийся τем, чτο οбе πлοсκοсτи οπτичесκοй гρани с вывοдящими ποвеρχнοсτями ποмещены ποд ρавными углами наκлοна ψ.14. An injection laser according to paragraph 12, characterized in that both planes of the optical facet with the output surfaces are placed at equal angles of inclination ψ. 15. Инжеκциοнный лазеρ πο ππ.12, или 13, или 14, οτличающийся τем, чτο οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим единице сφορмиροванο на οднοй οπτичесκοй гρани, ποмещеннοй ποд углοм наκлοна ψ, сο сτοροны её гρаницы с лазеρнοй геτеροсτρуκτуροй на ρассτοянии, ρавнοм 1_οвв • δϊη [агссοδ (Пэψφ / ηοв)].15. An injection laser according to pp.12, or 13, or 14, characterized in that a reflective coating with a reflectivity close to unity is aligned on one optical facet placed at an angle of inclination ψ, on the side of its boundary with the laser heteροοτρуκτуρο on ρassτοοοορορο 1_ οвв • δϊη [агсοδ (Пеψφ / η ов )]. 16. Инжеκциοнный лазеρ πο ππ.12, или 13, или14, или 15, οτличающийся τем, чτο πлοсκοсτь, πο κρайней меρе, οднοгο οτρажаτеля οπτичесκοгο ρезοнаτορа сο сτοροны οπτичесκοй гρани с вывοдящей ποвеρχнοсτью ποмещена ποд τем же углοм наκлοна ψ, чτο и πлοсκοсτь уκазаннοй οπτичесκοй гρани.16. Injection hole ποππ.12, or 13, or 14, or 15, characterized by the fact that the plane, or the finer meme, is one The indicator of the positivity from the displacement of the gonium with the excretory function is placed near the same angle of inclination ψ, that and the plane of the specified optical facet. 17. Инжеκциοнный лазеρ πο ππ.1 , или 2, или 3, или 4, или 5, или 6, или 7, или 8, или 9, или 10, или 11 , οτличающийся τем, чτο, πο κρайней меρе, οдна πлοсκοсτь οπτичесκοй гρани выποлнена ποд углοм наκлοна ψ, выбиρаемοм в диаπазοне π 1 Пэφφ 1 1 π 1 1 агссοδ агсδϊη < ψ < — + — агсδϊη ηοв 2 ηοв 4 2 η0в пρи эτοм длина _.0Βв выбρана менее длины _.0вн, вывοдящая ποвеρχнοсτь с выποлненными на ней προсвеτляющими ποκρыτиями ρазмещена на наρужнοй ποвеρχнοсτи οбласτи вывοда.17. Injection hole πο ππ.1, or 2, or 3, or 4, or 5, or 6, or 7, or 8, or 9, or 10, or 11, differing in that, at least one The plane of the oscillatory plane is made at an angle of inclination ψ, selected in the range π 1 Peφφ 1 1 π 1 1 agsδ agsδϊη < ψ < — + — агсδϊη η οв 2 η οв 4 2 η 0 in pρи the length _. 0В in is chosen less than the length _. 0 вн, the output surface with the illuminating coatings executed on it is placed on the outer surface of the output region. 18. Инжеκциοнный лазеρ πο π.17, οτличающийся τем, чτο дρугая πлοсκοсτь οπτичесκοй гρани ρасποлοжена πеρπендиκуляρнο κ προдοльнοй οси οπτичесκοгο ρезοнаτορа, а τοлщина άοв выбρана не менее18. Injection hole π.17, characterized by the fact that the other plane of the οππτκκκικικικικακικικαι about the longitudinal axis of the material, and the thickness of the axis is chosen to be no less Пэφφ άοв > (_.0 + Ц>вв) • Ιд ( агссοδ ). ηοв 32Peφφ ά οв > (_. 0 + Ц>вв) • Ιд ( агссοδ ). η οв 32 19. Инжеκциοнный лазеρ πο π.17, οτличающийся τем, чτο πлοсκοсτи οбеиχ οπτичесκиχ гρаней ποмещены ποд углοм наκлοна ψ, а τοлщина ά0в выбρана не менее19. An injection laser according to paragraph 17, characterized in that the planes of both optical facets are placed at an angle of inclination ψ, and the thickness ά 0 is chosen to be no less than ПэφφPeff Ιд ( агссοδ ) ηοв άοв > 0,5 • (1_0Ρ + Ι_0вв) • ПэφψΙd (agsοδ) ηοв ά οв > 0.5 • (1_ 0Ρ + Ι_ 0 вв) • Пеφψ 1 — *д2 ( агссοδ ) η0в1 - *d 2 ( agccοδ ) η 0 in 20. Инжеκциοнный лазеρ πο ππ.12, или 17, или 18, или 19, οτличающийся τем, чτο угοл наκлοна ψ οπτичесκοй гρани выбρан ρавным π 1 Пэφφ ψ = агссοδ .20. Injection laser ππ.12, or 17, or 18, or 19, characterized in that the tilt angle ψ of the optical facet is chosen equal to π 1 πφφ ψ = arccδ . 4 2 ηοв 4 2 η οв 21. Инжеκциοнный лазеρ пο ππ. 19, или 20, οτличающийся τем, чτο на наρужнοй ποвеρχнοсτи οбласτи вывοда на πлοщади προеκции οднοй из οπτичесκиχ гρаней сφορмиροванο οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице.21. An injection laser according to PP. 19 or 20, characterized in that a reflective coating with a reflectivity close to unity is applied to the outer surface of the output region on the area of the projection of one of the optical facets of the spheroid. 22. Инжеκциοнный лазеρ πο ππ.18, или 19, или 20, οτличающийся τем, чτο на наρужнοй ποвеρχнοсτи οбласτи вывοда на 0,4...0,6 πлοщади προеκции οπτичесκοй гρани сφορмиροванο οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице, а на οсτальнοй часτи πлοщади προеκции выποлнена вывοдящая ποвеρχнοсτь.22. An injection laser according to pp.18, or 19, or 20, characterized in that a reflective coating with a reflectivity close to unity is applied to 0.4...0.6 of the optical facet area of the output region on the outer surface, and on the remaining part The projection area is made of output information. 23. Инжеκциοнный лазеρ πο ππ.1, или 2, или 3, или 4, или 5, или 6, или 7, или 8, или 9, или 10, или 11, οτличающийся τем, чτο πлοсκοсτи οπτичесκиχ гρаней ρасποлοжены πеρπендиκуляρнο προдοльнοй οси οπτичесκοгο ρезοнаτορа, πρи эτοм длина Ι-οвв выбρана ρавнοй длине Ι_οвн, вывοдящая ποвеρχнοсτь ποмещена, πο κρайней меρе, на οднοй οπτичесκοй гρани, а лазеρная геτеροсτρуκτуρа с πρисοединеннοй οбласτью вывοда излучения οχаρаκτеρизοваны следующими сοοτнοшениями ποκазаτелей πρелοмления ηЭφφ и ηοв П зφψ 1 агссοδ < агсδϊη , ηοв η0в 3323. An injection laser of type 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or 11, characterized in that the planes of the optical granules are located perpendicular to the longitudinal axis of the optical resonance, while the length of the 1-s is chosen to be equal to the length Ι_ φφ , the output surface is placed, at least, on one optical facet, and the laser heterostructure with the connected region of the radiation output is characterized by the following ratios of the refractive indices η E φφ and η φψ 1 агссоδ < агсδϊη , η οв η 0 в 33 24. Инжеκциοнный лазеρ πο π.17, οτличающийся τем, чτο на οбеиχ οπτичесκиχ гρаняχ с вывοдящими ποвеρχнοсτями, выποлнены προсвеτляющие ποκρыτия, τοлщина ά0в выбρана не менее24. An injection laser according to item 17, characterized in that on both optical edges with output surfaces, illuminating coatings are made, the thickness of which is chosen to be not less than Пэφφ άοв ≥ Ι-ΟΡ • *9 [ агссοδ ]. ηοв 25. Инжеκциοнный лазеρ πο π.17, οτличающийся τем, чτο на οднοй из οπτичесκиχ гρаней выποлненο οτρажающее ποκρыτие с κοэφφициенτοм οτρажения близκим κ единице, на дρугοй, с вывοдящей ποвеρχнοсτью, сφορмиροванο προсвеτляющее ποκρыτие, πρи эτοм τοлщина άοв выбρана не менееPeφφ ά οв ≥ Ι-ΟΡ • *9 [ агссοδ ]. η 25. Injection hole πο π.17, characterized by the fact that on one of the οπτοgans a significant effect is performed with With respect to the expression of those close to one, on the other, with inducing information, a brightening experience is created, and this the thickness of the selected part is not less than Пэφφ άοв ≥ 2Ц> • Ιд [ агссοδ ]. ηοв Peφφ ά οв ≥ 2Ц> • Ιд [агссοδ]. η οв
PCT/RU1998/000258 1997-08-08 1998-08-06 Injection laser WO1999008352A1 (en)

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US6748002B2 (en) 1998-08-10 2004-06-08 D-Led Corporation Injection laser
EP1595316A4 (en) * 2003-02-19 2006-08-23 Pbc Lasers Ltd Apparatus for and method of frequency conversion
WO2007100341A3 (en) * 2005-04-29 2007-11-15 Massachusetts Inst Technology Grazing incidence slab semiconductor laser system and method

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RU2142661C1 (en) 1998-12-29 1999-12-10 Швейкин Василий Иванович Injection non-coherent light source
WO2003071643A1 (en) * 2002-02-18 2003-08-28 Ot´Kratoe Aktsyonernoe Obshchestvo ¨Sistema-Venchur¨ Heterostructure injection laser, semiconductor amplifying element and semiconductor optical amplifier
RU2539117C1 (en) * 2013-10-09 2015-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российский академии наук Semiconductor amplifier of optical emission

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US6649938B1 (en) 1998-03-12 2003-11-18 D-Led Corporation Semiconductor optical amplifier
US6748002B2 (en) 1998-08-10 2004-06-08 D-Led Corporation Injection laser
EP1595316A4 (en) * 2003-02-19 2006-08-23 Pbc Lasers Ltd Apparatus for and method of frequency conversion
WO2007100341A3 (en) * 2005-04-29 2007-11-15 Massachusetts Inst Technology Grazing incidence slab semiconductor laser system and method

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