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WO1994015396A1 - Electrical circuit for signal or alternating currrent amplification and control driven by another signal or alterning current - Google Patents

Electrical circuit for signal or alternating currrent amplification and control driven by another signal or alterning current Download PDF

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Publication number
WO1994015396A1
WO1994015396A1 PCT/SE1993/001109 SE9301109W WO9415396A1 WO 1994015396 A1 WO1994015396 A1 WO 1994015396A1 SE 9301109 W SE9301109 W SE 9301109W WO 9415396 A1 WO9415396 A1 WO 9415396A1
Authority
WO
WIPO (PCT)
Prior art keywords
channel
collector
diode
common
electrical circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/SE1993/001109
Other languages
French (fr)
Inventor
Ilgaitis Prusis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIGALS MARTINS
Original Assignee
NIGALS MARTINS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIGALS MARTINS filed Critical NIGALS MARTINS
Priority to AU58260/94A priority Critical patent/AU5826094A/en
Publication of WO1994015396A1 publication Critical patent/WO1994015396A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/62—Two-way amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/667—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor using complementary bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages

Definitions

  • the invention relates to an electrical circuit that can amplify and control signals or an alternating current and is driven by an other signal or alternating current.
  • This invention makes it possible to avoid the above drawbacks and by a simple and cheap semiconductor circuit makes it possible to fully control a signal by an alternating current or another signal.
  • FIG 1 shows the principle of this invention.
  • FIG. 2 shows one application of the invention with discrete semiconductors.
  • FIG. 3 shows one application of the invention in integrated circuit technique.
  • SUBSTITUTESHEET Figure 4 shows one application of the invention according to Figure 3 with protective layer to make the component withstand high voltages.
  • Figure 5 shows the lb - Ube characteristics for the circuit according to Fig. 2
  • Figure 6 shows the Ic - Uce characteristics for the circuit according to Fig. 2
  • Figure 7 shows the Ie - Ueb characteristics for the circuit according to Fig. 2
  • Figure 8 shows the Ic - Ucb characteristics for the circuit according to Fig. 2
  • Figure 9 shows examples of how the signal looks like at different points in the circuit.
  • FIG. 1 there is shown an example of how the positive channel (1) and the negative channel (2) could be connected together.
  • the circuit can be seen as a transistor that could be driven by an alternating current.
  • the positive channel (1) will only let through positive signals on the common base (B) if the potential on the common collector (C) is positive.
  • the negative channel (2) will only let through negative signals on the common base (B) if the potential on the common collector (C) is negative.
  • the potentials are relative to the potential on the common emitter (E) .
  • FIG. 2 there is shown an example of how the circuit according to Fig. 1 can be built with a transistor and a diode for each channel.
  • the circuit works according to Fig. 1, except that the voltage
  • SUBSTITUTESHEET between the common base (B) and the common emitter (E) needs to be more than 0.7 V.
  • each channel or all channels could be integrated in a so called IC-circuit.
  • the first layer is the emitters (n+, p+) that are more doped than the other layers.
  • the second layer for each channel is the base for that channel.
  • the thickness on this layer is less than the diffusion length of the charge carriers.
  • the third layer is the collector and its thickness is more than the diffusion length for the charge carriers.
  • the forth layer has the diode function.
  • Fig. 4 there is shown how an i-type layer is put on each side of the third layer that is the collector.
  • the i-layer is very thin and has the function of protecting the component against high voltages.
  • FIG. 5 there is shown the connection between the voltage between the common base (B) and the common emitter (E) and the current that goes through the common base (B) if a circuit according to Fig. 2, 3 or 4 is used.
  • FIG. 6 there is shown the connection between the voltage between the common emitter (E) and the common collector (C) and the current that goes through the common collector (C) at different current values at the common base (B) if a circuit according to Fig. 2, 3 or 4 is used.
  • FIG. 7 there is shown the connection between the voltage between the common emitter (E) and the common base (B) and the current that goes through the common emitter (E) at two different voltages between the common collector (C) and the common base (B) if a circuit according to Fig. 2, 3 or 4 is used.
  • SUBSTITUTESHEET Referring to Fig. 8, there is shown the connection between the voltage between the common collector (C) and the common base (B) and the current that goes through the common collector (C) at different currents through the common emitter (E) if a circuit according to Fig. 2, 3 or 4 is used.
  • FIG. 9 there is shown examples of how signals look like at different points in the circuit. If we have signals according to a) and b) then the result will be according to c) .

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention is related to an electrical circuit for amplification or control of a signal or alternating current by another signal or alternating current by using one or more channels connected in parallel to lead only during the negative part of an alternating current cycle and one or more channels connected in parallel to lead during the positive part of an alternating current cycle. The circuit can be seen as a transistor for alternating current where, for each channel, all bases are connected to a common base (B), all collectors are connected to a common collector (C), all emitters are connected to a common emitter (E). One channel could, in its easiest configuration, consist of one transistor and one diode.

Description

ELECTRICAL CIRCUIT FOR SIGNAL OR ALTERNATING CURRENT AMPLIFICATION AND CONTROL DRIVEN BY AN OTHER SIGNAL OR
ALTERNATING CURRENT.
The invention relates to an electrical circuit that can amplify and control signals or an alternating current and is driven by an other signal or alternating current.
All until now known semiconductor devices, except the Thyristor, has to be driven' by a direct current source. If control or amplification is needed for an alternating current signal then it has to be done by the use of alternating current which needs to be rectified first, a transformer which is expensive and gives thermal and magnetic losses or a Thyristor which then will limit the use since it is controlled by an impulse.
This invention makes it possible to avoid the above drawbacks and by a simple and cheap semiconductor circuit makes it possible to fully control a signal by an alternating current or another signal.
The invention, which is defined in the attached claims, is described in detail below, with reference to the drawings, in which:
Figure 1 shows the principle of this invention.
Figure 2 shows one application of the invention with discrete semiconductors.
Figure 3 shows one application of the invention in integrated circuit technique.
SUBSTITUTESHEET Figure 4 shows one application of the invention according to Figure 3 with protective layer to make the component withstand high voltages.
Figure 5 shows the lb - Ube characteristics for the circuit according to Fig. 2
Figure 6 shows the Ic - Uce characteristics for the circuit according to Fig. 2
Figure 7 shows the Ie - Ueb characteristics for the circuit according to Fig. 2
Figure 8 shows the Ic - Ucb characteristics for the circuit according to Fig. 2
Figure 9 shows examples of how the signal looks like at different points in the circuit.
Referring to Fig. 1, there is shown an example of how the positive channel (1) and the negative channel (2) could be connected together. The circuit can be seen as a transistor that could be driven by an alternating current. The positive channel (1) will only let through positive signals on the common base (B) if the potential on the common collector (C) is positive. The negative channel (2) will only let through negative signals on the common base (B) if the potential on the common collector (C) is negative.
The potentials are relative to the potential on the common emitter (E) .
Referring to Fig. 2, there is shown an example of how the circuit according to Fig. 1 can be built with a transistor and a diode for each channel. The circuit works according to Fig. 1, except that the voltage
SUBSTITUTESHEET between the common base (B) and the common emitter (E) needs to be more than 0.7 V.
Referring to Fig. 3, there is shown each channel or all channels could be integrated in a so called IC-circuit. The first layer is the emitters (n+, p+) that are more doped than the other layers. The second layer for each channel is the base for that channel. The thickness on this layer is less than the diffusion length of the charge carriers. The third layer is the collector and its thickness is more than the diffusion length for the charge carriers. The forth layer has the diode function.
Referring to Fig. 4, there is shown how an i-type layer is put on each side of the third layer that is the collector. The i-layer is very thin and has the function of protecting the component against high voltages.
Referring to Fig. 5, there is shown the connection between the voltage between the common base (B) and the common emitter (E) and the current that goes through the common base (B) if a circuit according to Fig. 2, 3 or 4 is used.
Referring to Fig. 6, there is shown the connection between the voltage between the common emitter (E) and the common collector (C) and the current that goes through the common collector (C) at different current values at the common base (B) if a circuit according to Fig. 2, 3 or 4 is used.
Referring to Fig. 7, there is shown the connection between the voltage between the common emitter (E) and the common base (B) and the current that goes through the common emitter (E) at two different voltages between the common collector (C) and the common base (B) if a circuit according to Fig. 2, 3 or 4 is used.
SUBSTITUTESHEET Referring to Fig. 8, there is shown the connection between the voltage between the common collector (C) and the common base (B) and the current that goes through the common collector (C) at different currents through the common emitter (E) if a circuit according to Fig. 2, 3 or 4 is used.
Referring to Fig. 9, there is shown examples of how signals look like at different points in the circuit. If we have signals according to a) and b) then the result will be according to c) .
If we change the signal lb so it will be according to d) then the result will be according to e) .
If we put on a bias to the signal Uc so it looks like f) and a signal at lb according to g) then the result will be according to h) .
SUBSTITUTESHEET

Claims

1. Electrical circuit for amplifying or control of an alternating current, characterized in that there is one or more channels (1) that have the ability to lead during only the positive part of an alternating current cycle and one or more channels (2) that have the ability to lead during only the negative part of an alternating current cycle and all channels (1, 2) are connected in parallel by connecting the collector from each channel to a common collector (C), the emitter form each channel to a common emitter (E) and the base from each channel to a common base (B) .
2. Electrical circuit according to claim 1, characterized in that the channels have transistors (3, 5) and diodes (4, 6).
3. Electrical circuit according to claim 2, characterized in that each positive channel (1) have a diode (4) that is connected in serial to the collector of a NPN transistor (3) so that the cathode of the diode is connected to the collector of the transistor and that each negative channel (2) have a diode (6) that is connected in serial to the collector of a PNP transistor (5) so that the anode of the diode is connected to the collector of the transistor, all emitters are connected together to a common emitter (E), all bases are connected together to a common base (B) and all free ends of the diodes are connected together to a common collector (C) .
4. Electronic circuit according to claim 2 or 3, characterized in that the transistor (3) and the diode (4) consists of a NPNP structure for the positive channel/s (1) and that the transistor (5) and the diode
SUBSTITUTESHEET (6) consists of a PNPN structure for the negative channel/s.
5. Electronic circuit according to claim 4, characterized in that, for each channel, the first layer has the emitter function and is highly doped, one second layer has the base function and is less doped and the thickness is less than the length of the diffusion for the charge carriers, one third layer has the collector function and is therefore thicker than the length of the diffusion for the charge carriers and one forth layer has the function of a diode.
6. Electrical circuit according to claim 4 or 5, characterized in that the third layer for each channel has a i-type layer on both sides.
7. Electrical circuit according to claim 1, 2, 3, 4, 5 or 6, characterized in that the channels or the whole circuit is integrated in a so called integrated circuit.
SUBSTITUTE SHEET
PCT/SE1993/001109 1992-12-23 1993-12-23 Electrical circuit for signal or alternating currrent amplification and control driven by another signal or alterning current Ceased WO1994015396A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU58260/94A AU5826094A (en) 1992-12-23 1993-12-23 Electrical circuit for signal or alternating currrent amplification and control driven by another signal or alterning current

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9203907-2 1992-12-23
SE9203907A SE9203907A0 (en) 1992-12-23 1992-12-23 Electrical circuit for signal or alternating current amplification and control driven by an other signal or alternating current

Publications (1)

Publication Number Publication Date
WO1994015396A1 true WO1994015396A1 (en) 1994-07-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE1993/001109 Ceased WO1994015396A1 (en) 1992-12-23 1993-12-23 Electrical circuit for signal or alternating currrent amplification and control driven by another signal or alterning current

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AU (1) AU5826094A (en)
SE (1) SE9203907A0 (en)
WO (1) WO1994015396A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2957993A (en) * 1954-11-17 1960-10-25 Siemens Ag Control circuits for series connected semiconductors
US3763381A (en) * 1971-11-18 1973-10-02 Elgin Electronics Thyristor gating and phase shift circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2957993A (en) * 1954-11-17 1960-10-25 Siemens Ag Control circuits for series connected semiconductors
US3763381A (en) * 1971-11-18 1973-10-02 Elgin Electronics Thyristor gating and phase shift circuit

Also Published As

Publication number Publication date
AU5826094A (en) 1994-07-19
SE9203907A0 (en) 1994-06-24
SE9203907D0 (en) 1992-12-23

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