[go: up one dir, main page]

WO1992012273A1 - Procede et dispositif de traitement de materiau au plasma - Google Patents

Procede et dispositif de traitement de materiau au plasma Download PDF

Info

Publication number
WO1992012273A1
WO1992012273A1 PCT/SU1990/000286 SU9000286W WO9212273A1 WO 1992012273 A1 WO1992012273 A1 WO 1992012273A1 SU 9000286 W SU9000286 W SU 9000286W WO 9212273 A1 WO9212273 A1 WO 9212273A1
Authority
WO
WIPO (PCT)
Prior art keywords
οsi
plasma
nodes
plasma processing
πlazmennyχ
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/SU1990/000286
Other languages
English (en)
Russian (ru)
Inventor
Vyacheslav Gennadievich Shamshurin
Pavel Pavlovich Kulik
Oleg Vyacheslavovich Sinyagin
Iskander Malikovich Tokmulin
Vladimir Valentinovich Zakharov
Nikolai Vasilievich Ermokhin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INZHENERNY TSENTR ''PLAZMODINAMIKA''
Original Assignee
INZHENERNY TSENTR ''PLAZMODINAMIKA''
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INZHENERNY TSENTR ''PLAZMODINAMIKA'' filed Critical INZHENERNY TSENTR ''PLAZMODINAMIKA''
Priority to PCT/SU1990/000286 priority Critical patent/WO1992012273A1/fr
Priority to GB9316308A priority patent/GB2271124B/en
Priority to FR9108088A priority patent/FR2678467A1/fr
Publication of WO1992012273A1 publication Critical patent/WO1992012273A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/44—Plasma torches using an arc using more than one torch
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid

Definitions

  • the dry end of the circuit board is located inside the mixing chamber, which is the same as the mixing chamber. Electric arc generators of plasma processes have been switched on 25 of the source of the current. The processed material is supplied internally to the mixing chambers through the combined process of the combined mixed plasma elec- trode.
  • each elec- trode was executed in the form of a disk having rotation, in particular a rotation of the disk _ 4 - was ⁇ as ⁇ l ⁇ zhena in ⁇ dn ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i with ⁇ syu node ele ⁇ dn ⁇ g ⁇ , ⁇ i e ⁇ m ⁇ l ⁇ s ⁇ s ⁇ i ⁇ as ⁇ l ⁇ zheniya s ⁇ edni ⁇ sections ⁇ a ⁇ ⁇ iv ⁇ lezhaschi ⁇ dis ⁇ v ⁇ iv ⁇ lezhaschi ⁇ ele ⁇ dug ⁇ vy ⁇ ge- ne ⁇ a ⁇ v would ⁇ s ⁇ yali d ⁇ ug ⁇ d ⁇ uga ⁇ meny ⁇ ey me ⁇ e the amount ⁇ lschiny dis ⁇ a.
  • P ⁇ ed ⁇ ch ⁇ i ⁇ eln ⁇ ele ⁇ dnye nodes us ⁇ ys ⁇ ve d ⁇ ya ⁇ laz- menn ⁇ y ⁇ b ⁇ ab ⁇ i ma ⁇ e ⁇ iala vy ⁇ lnya ⁇ with v ⁇ zm ⁇ zhn ⁇ s ⁇ yu of variation of the angle ⁇ ass ⁇ yaniya na ⁇ l ⁇ na ⁇ si ele ⁇ dn ⁇ g ⁇ node ⁇ n ⁇ - si ⁇ eln ⁇ ⁇ si shi ⁇ v ⁇ da and shi ⁇ v ⁇ d vy ⁇ lnya ⁇ with v ⁇ z- Yu m ⁇ zhn ⁇ s ⁇ yu ⁇ i ⁇ si ⁇ uem ⁇ g ⁇ ⁇ e ⁇ emescheniya vd ⁇ l sv ⁇ ey ⁇ si.
  • Fig. 3 section in the area of the Sh – Sh in Fig. 1 with the current, 0 illustrating the direction of the magnetic induction for the device used in the fig., according to the notice; ⁇ ig.4 - ⁇ with ema ⁇ ichn ⁇ ⁇ ns ⁇ u ⁇ ivn ⁇ e vy ⁇ lnenie us ⁇ y- s ⁇ va for ⁇ lazmenn ⁇ y ⁇ b ⁇ ab ⁇ i ma ⁇ e ⁇ iala with ⁇ dn ⁇ s ⁇ uynymi ele ⁇ dug ⁇ vymi gene ⁇ a ⁇ ami ⁇ lazmenn ⁇ g ⁇ ⁇ a, s ⁇ glasn ⁇ 5 iz ⁇ b ⁇ e ⁇ eniyu; ⁇ ig.5 - with ⁇ ema ⁇ ichn ⁇ ⁇ ns ⁇ u ⁇ ivn ⁇ e vy ⁇ lnenie us ⁇ y- s ⁇ v ⁇
  • b - a schematic cost-effective design of devices for plasma processing of materials with two-phase elec- trogen generators; ⁇ ig.7 - view D at ⁇ s ⁇ el ⁇ e ⁇ ig.b, s ⁇ glasn ⁇ iz ⁇ b ⁇ e ⁇ eniyu ⁇ ig.8 iz ⁇ b ⁇ azhae ⁇ hema ⁇ ichn ⁇ ⁇ ns ⁇ u ⁇ ivn ⁇ e vy ⁇ lne- of us ⁇ sys ⁇ va for ⁇ lazmenn ⁇ y ⁇ b ⁇ ab ⁇ i ma ⁇ e ⁇ iala with ⁇ e ⁇ - ⁇ lyusn ⁇ y magni ⁇ n ⁇ y sis ⁇ em ⁇ y, s ⁇ glasn ⁇ iz ⁇ b ⁇ e ⁇ eniyu; SE Fig.
  • Fig. ⁇ is a section of the comparativelyimportant Matter-wise aspect of Fig. 8 with a diagram illustrating the direction of magnetic induction for the device, as illustrated in Fig.
  • FIG. 15 is an illustration illustrating a rejection.
  • the processed material is turned off at all times with plasma streams with a higher high dynamic pressure than in the central part. 5 ⁇ As a result, the processed material is kept in the mainstream part of the plasma, while the speed is increasing and the intensity is
  • Each plasma structure, bypassing the electrical current, has a magnetic field of its own.
  • the dielectric cartridge 10 is equipped with a pipe 12 for introducing gas into the chamber 7 in the direction of the field ⁇ .
  • Electrical nodes 6 are mounted on planes 13 with a total of 14 and optionally 15 on-site.
  • plan 13 (Fig. 2) with the possibility of accommodation. Plank 13 is reserved for ⁇ 17 frame 18 with a total of 19, equipped with a retaining element 20 and completed with the room and the compartment 17.
  • ⁇ azhdaya ⁇ a ⁇ a ele ⁇ dny ⁇ uzl ⁇ v 6 ⁇ as ⁇ l ⁇ zhenny ⁇ on ⁇ lan ⁇ a ⁇ 13 ⁇ d ⁇ lyuchena - 10 - ⁇ is ⁇ chni ⁇ u 21 ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a and ⁇ eds ⁇ avlyae ⁇ gene ⁇ a ⁇ ⁇ lazmenn ⁇ g ⁇ ⁇ a 22 ⁇ y ⁇ b ⁇ azue ⁇ sya of ⁇ veduschi ⁇ ⁇ lazmenny ⁇ s ⁇ uy 23 ele ⁇ dny ⁇ uzl ⁇ v used in z ⁇ ne 24 sme- sheniya e ⁇ i ⁇ s ⁇ uy 23.
  • Tsen ⁇ y ⁇ nts ⁇ v ⁇ lyus ⁇ v 26 ⁇ as ⁇ l ⁇ zheny in ⁇ l ⁇ s- ⁇ s ⁇ i, ⁇ e ⁇ ese ⁇ ayuschey ⁇ s 2 shi ⁇ v ⁇ da I in z ⁇ ne between ⁇ ch ⁇ y in ⁇ y ⁇ e ⁇ ese ⁇ ayu ⁇ sya ⁇ si II ele ⁇ dny ⁇ uzl ⁇ v 6, 30 and 8 vy ⁇ dnymi s ⁇ lami ele ⁇ dny ⁇ uzl ⁇ v 6.
  • Ele ⁇ dnye nodes 6 ⁇ d ⁇ lyucheny ⁇ is ⁇ chni ⁇ am 21 ⁇ s ⁇ - yann ⁇ g ⁇ ⁇ a with ⁇ bes ⁇ echeniem ⁇ dina ⁇ v ⁇ y ⁇ lya ⁇ n ⁇ s ⁇ i ⁇ i- v ⁇ lezhaschi ele ⁇ dny ⁇ ⁇ uzl ⁇ v b dvu ⁇ gene ⁇ a ⁇ v ⁇ lazmenny ⁇ ⁇ v. 35
  • the processed material 31 is located along with 2 inside and outside ⁇ of the path I in the direction of the village C.
  • the second unit there are located the second elec- tronic nodes 6 of each of the generators of the plasma processing unit, - - at the corner ⁇ for the simplicity of the plasma generators.
  • Fig. 2 is shown through the line ⁇ - ⁇ fig. ⁇ . With II electric nodes in each pair, they are located at an angle of ⁇ friend to friend.
  • the main circuit contains the I
  • each electrical unit is secured at 32 with an accessory 33 with an attaching element 34.
  • An adapter 32 is fitted with an optional 36 attaching unit.
  • ⁇ azhdy ele ⁇ dny assembly 6 ⁇ as ⁇ l ⁇ zhen ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m 30 ch ⁇ vy ⁇ dn ⁇ e s ⁇ l ⁇ 8 na ⁇ avlen ⁇ ⁇ si ⁇ 2 shi ⁇ v ⁇ da I, II and eg ⁇ ⁇ s ⁇ azmeschena ⁇ d ugl ⁇ m ⁇ si ⁇ 2 shi ⁇ v ⁇ da I.
  • ⁇ azhdy ⁇ sleduyuschy ele ⁇ dug ⁇ v ⁇ y gene ⁇ a ⁇ ⁇ lazmenn ⁇ g ⁇ ⁇ a ⁇ d ⁇ lyuchen ⁇ is ⁇ chni ⁇ u 21 ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a with ⁇ lya ⁇ n ⁇ s ⁇ yu, ⁇ b ⁇ a ⁇ n ⁇ y ⁇ lya ⁇ n ⁇ s ⁇ i ⁇ azhd ⁇ g ⁇ ⁇ edyduscheg ⁇ 10 ele ⁇ dug ⁇ v ⁇ g ⁇ gene ⁇ a ⁇ a ⁇ lazmenn ⁇ g ⁇ ⁇ a.
  • the electrodes can be made in the form of disks 40 (Fig. 5), reserved for 41 41 and 42 rotations.
  • P ⁇ i- v ⁇ d 42 za ⁇ e ⁇ len ⁇ ey ⁇ e to 43, in us ⁇ an ⁇ vlenn ⁇ y na ⁇ avlyayuschi ⁇ 44 za ⁇ e ⁇ lenny ⁇ on ⁇ sn ⁇ vanii 5.
  • ⁇ ey ⁇ a 43 vy ⁇ lnena 15 v ⁇ zm ⁇ zhn ⁇ s ⁇ yu ⁇ e ⁇ emescheniya in na ⁇ avlyayuschi ⁇ 44 and 45.
  • SCREWER I is located at 35 plus 56 and 55 with the possibility of accommodation in addition to 2 rooms. - 13 - Supplementing to a room of 50 rooms for transferring cooler with 2 bushes I.
  • Electronic nodes of 6 each pair are made with the possibility of changing the distance between them by moving 5 terminals 14 to terminal 58 (Fig. 7) of terminal 48.
  • Two elec- trical nodes 6 on terminals 48 are supplied with a 10-arc plasma generat- tor.
  • Electric arc generators of a plasma process are equipped with a sym- metric generator with two 2 circuits I.
  • Electric nodes 6 of each electric generator of the plasma generator have been installed with a symmetrical positive 15
  • Electrical nodes 6 are connected to a source of 21 power supplies with a voltage of potentials of the central elec- tric power 9 and external power 2.
  • the pairs of electric nodes 6, connected to the source 21 of the fixed source, are located on the planes 13, and are used for the generation of the electric generator. Planks 13 with a total of 14 are reserved in a separate range of 59 units 60 with the option of moving in the direction of 30 30 with 2 width I and an element f. 9 (20).
  • Each bracket 60 (Fig. 8) is secured on 61, enlarged on the base 5. Brackets 60 are made from a non-exhausting material.
  • each circuit 61 is the complete 10 out of 64 disconnected magnets of the magnetic system.
  • Pa ⁇ a ele ⁇ dny ⁇ uzl ⁇ v 6 ⁇ lan ⁇ e 13 ⁇ d ⁇ lyuchenny ⁇ ⁇ is ⁇ chni ⁇ u 21 ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a, ⁇ eds ⁇ avlyae ⁇ ele ⁇ du- g ⁇ v ⁇ y gene ⁇ a ⁇ ⁇ lazmenn ⁇ g ⁇ ⁇ a.
  • Electric arc generators of the plasma process are equipped with a symmetrical path
  • Electric nodes 6 in each electric arc generator have been installed with a symmetrical in-process
  • Box 18 is equipped with outputs 65, each of which has a solenoid 27, connected to the source 30, is located on each of the terminals. Chambers 18 and 65 are made from a magnetic material.
  • the electronic device is connected to a four-pole magnetic system.
  • Plasma-forming gas through an electrical discharge of 30 and an output of 8 each electronic unit 6 9, is an interstitial impurity which mixes 23, 23.
  • the processed material 31 is supplied through a wider I input along with its 2 in the 24 mixing zone, setting a minimum free distance of 20 mm. This makes it possible to increase the efficiency of the input of the processed material 31 in the plasma.
  • Plasma production in the central part of the plasma source 22 is controlled by a change in the distribution between the electric generators of the second type of plasma
  • Electricians 37 (Fig. 4) and discs 40 (Fig. 5), converted to 2 shi ⁇ drive I, must be located - 19 - in order to minimize the perturbations in the plasma flow 22.
  • Each electrical unit 6 Forms a plasma line 23.
  • Plasma stream 23 mixes in the 24 mixing zone and produces a plasma stream 22.
  • the electrical circuit flows into each plasma stream 23 of the central elec- tric power
  • Pa ⁇ a ele ⁇ dny ⁇ uzl ⁇ v used to ⁇ lan ⁇ e 13 ( ⁇ ig. ⁇ Z) ⁇ d- ⁇ lyuchennye ⁇ is ⁇ chni ⁇ u 21 ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a, ⁇ b ⁇ azuyu ⁇ ele ⁇ - - 21 - of the arc generators of the plasma generator.
  • the invention may be used in the chemical, electrical,

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

L'invention concerne la régulation du plasma. Un procédé de traitment au plasma d'un matériau consiste à produire un système de plus de deux jets de plasma convergents (23) formant une zone de mélange (24), à acheminer le matériau à traiter dans la zone de mélange (24), à faire passer des courants électriques continus dans les sections de jets de plasma (23) jusque dans la zone (24) et à appliquer un champ magnétique aux sections conductrices de courant de chaque jet de plasma (23). Un dispositif de traitement au plasma d'un matériau comprend un conduit de charge (1), des générateurs de jets de plasma à arc électrique constitués chacun par des électrodes (6) destinées à générer des jets de plasma (23), dont les axes (11) sont orientés en un angle aigu gamma par rapport à l'axe (2) du conduit de charge (1), et lesquelles sont connectées à une source de courant continu (21), ainsi qu'un système magnétique constitué par un circuit magnétique ouvert dont les pôles (26) sont situés dans la zone de mélange (24) des jets de plasma (23).
PCT/SU1990/000286 1990-12-26 1990-12-26 Procede et dispositif de traitement de materiau au plasma Ceased WO1992012273A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/SU1990/000286 WO1992012273A1 (fr) 1990-12-26 1990-12-26 Procede et dispositif de traitement de materiau au plasma
GB9316308A GB2271124B (en) 1990-12-26 1990-12-26 Method and apparatus for plasma treatment of a material
FR9108088A FR2678467A1 (fr) 1990-12-26 1991-06-28 Procede de traitement au plasma de materiaux et dispositif pour sa realisation.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SU1990/000286 WO1992012273A1 (fr) 1990-12-26 1990-12-26 Procede et dispositif de traitement de materiau au plasma

Publications (1)

Publication Number Publication Date
WO1992012273A1 true WO1992012273A1 (fr) 1992-07-23

Family

ID=21617723

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SU1990/000286 Ceased WO1992012273A1 (fr) 1990-12-26 1990-12-26 Procede et dispositif de traitement de materiau au plasma

Country Status (3)

Country Link
FR (1) FR2678467A1 (fr)
GB (1) GB2271124B (fr)
WO (1) WO1992012273A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996023394A1 (fr) * 1995-01-26 1996-08-01 ZAKRYTOE AKTSIONERNOE OBSCHESTVO PROIZVODSTVENNAYA FIRMA 'Az' Appareil generateur de flux plasmique
US5767627A (en) * 1997-01-09 1998-06-16 Trusi Technologies, Llc Plasma generation and plasma processing of materials
US6040548A (en) * 1996-05-31 2000-03-21 Ipec Precision, Inc. Apparatus for generating and deflecting a plasma jet
US6139678A (en) * 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6168697B1 (en) 1998-03-10 2001-01-02 Trusi Technologies Llc Holders suitable to hold articles during processing and article processing methods
US6238587B1 (en) 1996-05-31 2001-05-29 Ipec Precison, Inc. Method for treating articles with a plasma jet
US6261375B1 (en) 1999-05-19 2001-07-17 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6423923B1 (en) 2000-08-04 2002-07-23 Tru-Si Technologies, Inc. Monitoring and controlling separate plasma jets to achieve desired properties in a combined stream
US6660643B1 (en) 1999-03-03 2003-12-09 Rwe Schott Solar, Inc. Etching of semiconductor wafer edges
US6749764B1 (en) 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
EP2270845A2 (fr) 1996-10-29 2011-01-05 Tru-Si Technologies Inc. Circuits intégrés et leurs procédés de fabrication
CN105338724A (zh) * 2014-08-14 2016-02-17 新疆兵团现代绿色氯碱化工工程研究中心(有限公司) 一种v型等离子体炬的喷口

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0861576B1 (fr) * 1995-11-13 2000-09-06 IST Instant Surface Technology S.A. Generateur de flux de plasma d'arc de configuration fermee
WO1997018692A1 (fr) * 1995-11-13 1997-05-22 Ist Instant Surface Technology S.A. Generateur de plasma a quatre buses pour la formation d'un jet active
GB2324196B (en) * 1997-04-09 2001-10-24 Aea Technology Plc Plasma processing
RU2267239C2 (ru) * 2000-04-10 2005-12-27 Тетроникс Лимитед Устройство сдвоенной плазменной горелки
US7671294B2 (en) * 2006-11-28 2010-03-02 Vladimir Belashchenko Plasma apparatus and system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4013867A (en) * 1975-08-11 1977-03-22 Westinghouse Electric Corporation Polyphase arc heater system
GB1493394A (en) * 1974-06-07 1977-11-30 Nat Res Dev Plasma heater assembly
GB1525393A (en) * 1974-10-02 1978-09-20 Daido Steel Co Ltd Heat treating apparatus and method
DE1589562B2 (de) * 1966-01-07 1979-08-09 Centre National De La Recherche Scientifique, Paris Verfahren zur Erzeugung eines Plasmastroms hoher Temperatur

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3283205A (en) * 1961-06-01 1966-11-01 Bolt Harold E De Shifting arc plasma system
FR1376869A (fr) * 1963-11-15 1964-10-31 United Kingdom Government Chalumeau à jets de plasma
US3453474A (en) * 1966-04-27 1969-07-01 Xerox Corp Plasma arc electrodes
US4009413A (en) * 1975-02-27 1977-02-22 Spectrametrics, Incorporated Plasma jet device and method of operating same
US4584160A (en) * 1981-09-30 1986-04-22 Tokyo Shibaura Denki Kabushiki Kaisha Plasma devices
US4982067A (en) * 1988-11-04 1991-01-01 Marantz Daniel Richard Plasma generating apparatus and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589562B2 (de) * 1966-01-07 1979-08-09 Centre National De La Recherche Scientifique, Paris Verfahren zur Erzeugung eines Plasmastroms hoher Temperatur
GB1493394A (en) * 1974-06-07 1977-11-30 Nat Res Dev Plasma heater assembly
GB1525393A (en) * 1974-10-02 1978-09-20 Daido Steel Co Ltd Heat treating apparatus and method
US4013867A (en) * 1975-08-11 1977-03-22 Westinghouse Electric Corporation Polyphase arc heater system

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996023394A1 (fr) * 1995-01-26 1996-08-01 ZAKRYTOE AKTSIONERNOE OBSCHESTVO PROIZVODSTVENNAYA FIRMA 'Az' Appareil generateur de flux plasmique
US6040548A (en) * 1996-05-31 2000-03-21 Ipec Precision, Inc. Apparatus for generating and deflecting a plasma jet
US6238587B1 (en) 1996-05-31 2001-05-29 Ipec Precison, Inc. Method for treating articles with a plasma jet
EP2270846A2 (fr) 1996-10-29 2011-01-05 Tru-Si Technologies Inc. Circuits intégrés et leurs procédés de fabrication
EP2270845A2 (fr) 1996-10-29 2011-01-05 Tru-Si Technologies Inc. Circuits intégrés et leurs procédés de fabrication
US5767627A (en) * 1997-01-09 1998-06-16 Trusi Technologies, Llc Plasma generation and plasma processing of materials
WO1998031038A1 (fr) 1997-01-09 1998-07-16 Trusi Technologies, Llc Production de plasma et traitement de materiaux au plasma
US6627039B1 (en) 1997-11-20 2003-09-30 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6323134B1 (en) 1997-11-20 2001-11-27 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US7179397B2 (en) 1997-11-20 2007-02-20 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6139678A (en) * 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6168697B1 (en) 1998-03-10 2001-01-02 Trusi Technologies Llc Holders suitable to hold articles during processing and article processing methods
US6660643B1 (en) 1999-03-03 2003-12-09 Rwe Schott Solar, Inc. Etching of semiconductor wafer edges
US6287976B1 (en) 1999-05-19 2001-09-11 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6261375B1 (en) 1999-05-19 2001-07-17 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6423923B1 (en) 2000-08-04 2002-07-23 Tru-Si Technologies, Inc. Monitoring and controlling separate plasma jets to achieve desired properties in a combined stream
US6541729B2 (en) 2000-08-04 2003-04-01 Tru-Si Technologies, Inc. Monitoring and controlling separate plasma jets to achieve desired properties in a combined stream
US6749764B1 (en) 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
CN105338724A (zh) * 2014-08-14 2016-02-17 新疆兵团现代绿色氯碱化工工程研究中心(有限公司) 一种v型等离子体炬的喷口

Also Published As

Publication number Publication date
GB2271124B (en) 1995-09-27
GB2271124A (en) 1994-04-06
GB9316308D0 (en) 1993-09-22
FR2678467A1 (fr) 1992-12-31

Similar Documents

Publication Publication Date Title
WO1992012273A1 (fr) Procede et dispositif de traitement de materiau au plasma
WO1992012610A1 (fr) Dispositif de traitement de materiau a l'arc de plasma
US7031133B2 (en) Aerosol charge altering device
US4896174A (en) Transport of suspended charged particles using traveling electrostatic surface waves
EP0473097B1 (fr) Système permettant l'irradiation d'une surface avec des ions atomiques et moléculaires utilisant un balayage magnétique bidimentionnel
JP3004720B2 (ja) 顕微鏡的に微細な誘電粒子の処理装置及び処理方法
JP2000511344A (ja) プラズマジェットを発生しかつ偏向するための装置
CN1314300C (zh) 星形箍缩的x射线和远紫外线光子源
US5155651A (en) Levitator with rotation control
JPH0349198B2 (fr)
Hiles et al. Power frequency magnetic field management using a combination of active and passive shielding technology
US20130294953A1 (en) Gas delivery device and vehicle
US20070235419A1 (en) Modular hybrid plasma reactor and related systems and methods
KR970072171A (ko) 플라즈마 소스
US4590379A (en) Achromatic deflector and quadrupole lens
RU2103225C1 (ru) Устройство для получения озона
US5444243A (en) Wien filter apparatus with hyperbolic surfaces
US3739552A (en) Air filter utilizing space trapping of charged particles
Allison et al. Cubic electrodynamic levitation trap with transparent electrodes
CN100589225C (zh) 离子注入装置
RU2032281C1 (ru) Способ создания плазменного потока и устройство для его осуществления
WO1996023394A1 (fr) Appareil generateur de flux plasmique
RU2121730C1 (ru) Способ проведения нанотехнологической реакции и устройство для его осуществления
WO2002033728A1 (fr) Dispositif et procede pour la gravure d'un substrat au moyen d'un plasma a couplage inductif
US3312858A (en) Deflecting system for charge carrier beams

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): BG DE GB JP KR NL

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642