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WO1990011968A3 - OXYDE DE CUIVRE A VALENCE MIXTE DERIVE DE LA STRUCTURE DE LA PEROWSKITE DE TYPE (ACuO3-x)2(A'O)¿2? - Google Patents

OXYDE DE CUIVRE A VALENCE MIXTE DERIVE DE LA STRUCTURE DE LA PEROWSKITE DE TYPE (ACuO3-x)2(A'O)¿2? Download PDF

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Publication number
WO1990011968A3
WO1990011968A3 PCT/FR1990/000255 FR9000255W WO9011968A3 WO 1990011968 A3 WO1990011968 A3 WO 1990011968A3 FR 9000255 W FR9000255 W FR 9000255W WO 9011968 A3 WO9011968 A3 WO 9011968A3
Authority
WO
WIPO (PCT)
Prior art keywords
equal
lesser
pervskite
acuo3
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR1990/000255
Other languages
English (en)
Other versions
WO1990011968A2 (fr
Inventor
Bernard Raveau
Daniel Groult
Maryvonne Hervieu
Thierry Rouillon
Jackie Provost
Claude Michel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of WO1990011968A2 publication Critical patent/WO1990011968A2/fr
Publication of WO1990011968A3 publication Critical patent/WO1990011968A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00—Compounds of lead
    • C01G21/006—Compounds containing lead, with or without oxygen or hydrogen, and containing two or more other elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/78—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by stacking-plane distances or stacking sequences

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

L'invention concerne un oxyde de cuivre à valence mixte dérivé de la structure de la pérowskite et de formule Pb1-x Alt2+y+z Tr1-z Et2 O7-ε avec z supérieur ou égal à 0, inférieur ou égal à 0,6, de préférence supérieur à 0,1; x supérieur ou égal à 0 et inférieur à 0,9, de préférence supérieur à 0,1; y supérieur ou égal à 0 et inférieur ou égal à 1, de préférence supérieur à 0,1 et inférieur à 0,9; avec epsilon pouvant varier entre -0,1 et 2/3 de préférence 1/2; Alt représente les alcalino-terreux à l'exception du magnésium, Tr représente les terres rares, de préférence l'yttrium, le lanthane et les lanthanides; et Et représente les éléments de transition de d5 à d10, le cuivre représentant au moins sept atomes sur huit desdits éléments de transition. Application à l'industrie électrique et électronique.
PCT/FR1990/000255 1989-04-11 1990-04-10 OXYDE DE CUIVRE A VALENCE MIXTE DERIVE DE LA STRUCTURE DE LA PEROWSKITE DE TYPE (ACuO3-x)2(A'O)¿2? Ceased WO1990011968A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8904769A FR2645523B1 (fr) 1989-04-11 1989-04-11 Oxyde de cuivre a valence mixte derive de la structure de la perowskite de type (acuo3-x)2(a(prime)o)2
FR89/04769 1989-04-11

Publications (2)

Publication Number Publication Date
WO1990011968A2 WO1990011968A2 (fr) 1990-10-18
WO1990011968A3 true WO1990011968A3 (fr) 1990-11-15

Family

ID=9380597

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR1990/000255 Ceased WO1990011968A2 (fr) 1989-04-11 1990-04-10 OXYDE DE CUIVRE A VALENCE MIXTE DERIVE DE LA STRUCTURE DE LA PEROWSKITE DE TYPE (ACuO3-x)2(A'O)¿2?

Country Status (4)

Country Link
EP (1) EP0420969A1 (fr)
JP (1) JPH03505571A (fr)
FR (1) FR2645523B1 (fr)
WO (1) WO1990011968A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03122020A (ja) * 1989-10-02 1991-05-24 Kokusai Chiyoudendou Sangyo Gijutsu Kenkyu Center 酸化物超電導体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2612507A1 (fr) * 1987-03-19 1988-09-23 Comp Generale Electricite Oxyde de cuivre a valence mixte supraconducteur et son procede de mise en oeuvre
WO1988008609A1 (fr) * 1987-04-24 1988-11-03 General Atomics Fabrication de ceramique supraconductrice a degre de purete eleve
DE3718786A1 (de) * 1987-06-04 1988-12-15 Siemens Ag Keramisches supraleitermaterial mit hoher sprungtemperatur und verfahren zu dessen herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2614460A1 (fr) * 1987-04-22 1988-10-28 Dulud Jacques Magnetophone du type utilisant des cartes magnetiques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2612507A1 (fr) * 1987-03-19 1988-09-23 Comp Generale Electricite Oxyde de cuivre a valence mixte supraconducteur et son procede de mise en oeuvre
WO1988008609A1 (fr) * 1987-04-24 1988-11-03 General Atomics Fabrication de ceramique supraconductrice a degre de purete eleve
DE3718786A1 (de) * 1987-06-04 1988-12-15 Siemens Ag Keramisches supraleitermaterial mit hoher sprungtemperatur und verfahren zu dessen herstellung

Also Published As

Publication number Publication date
JPH03505571A (ja) 1991-12-05
FR2645523B1 (fr) 1991-07-12
FR2645523A1 (fr) 1990-10-12
EP0420969A1 (fr) 1991-04-10
WO1990011968A2 (fr) 1990-10-18

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