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USD624510S1 - Light emitting diode device - Google Patents

Light emitting diode device Download PDF

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Publication number
USD624510S1
USD624510S1 US29/346,321 US34632109F USD624510S US D624510 S1 USD624510 S1 US D624510S1 US 34632109 F US34632109 F US 34632109F US D624510 S USD624510 S US D624510S
Authority
US
United States
Prior art keywords
light emitting
emitting diode
diode device
view
drawings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US29/346,321
Inventor
Wen-Huang Liu
Li-Wei Shan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SemiLEDs Optoelectronics Co Ltd
Original Assignee
SemiLEDs Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SemiLEDs Optoelectronics Co Ltd filed Critical SemiLEDs Optoelectronics Co Ltd
Priority to US29/346,321 priority Critical patent/USD624510S1/en
Assigned to SemiLEDs Optoelectronics Co., Ltd. reassignment SemiLEDs Optoelectronics Co., Ltd. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LIU, WEN-HUANG, SHAN, LI-WEI
Application granted granted Critical
Publication of USD624510S1 publication Critical patent/USD624510S1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

FIG. 1 is a perspective view of a light emitting diode device showing my new design;
FIG. 2 is a top view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left view thereof;
FIG. 6 is a right view thereof;
FIG. 7 is a cross-sectional view thereof, take along line 77 in FIG. 3.;
FIG. 8 is a cross-sectional view thereof, take along line 88 in FIG. 3.;
FIG. 9 is a right side view of thereof; the left side view is a mirror image of the right side view; and,
FIG. 10 is a front view of thereof; the backside view is a mirror image of the front side view.
It will be understood that the dash lines presented in the drawings are for illustration only, and do not form a part of the claimed design.

Claims (1)

  1. The ornamental design for a light emitting diode device, as shown and described in the drawings.
US29/346,321 2009-10-30 2009-10-30 Light emitting diode device Expired - Lifetime USD624510S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/346,321 USD624510S1 (en) 2009-10-30 2009-10-30 Light emitting diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29/346,321 USD624510S1 (en) 2009-10-30 2009-10-30 Light emitting diode device

Publications (1)

Publication Number Publication Date
USD624510S1 true USD624510S1 (en) 2010-09-28

Family

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Family Applications (1)

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US29/346,321 Expired - Lifetime USD624510S1 (en) 2009-10-30 2009-10-30 Light emitting diode device

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US (1) USD624510S1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD645008S1 (en) * 2010-11-08 2011-09-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD672731S1 (en) * 2011-01-24 2012-12-18 Cree, Inc. Light emitting diode
USD675581S1 (en) * 2011-01-21 2013-02-05 Cree, Inc. Light emitting diode
USD682225S1 (en) * 2011-01-24 2013-05-14 Cree, Inc. Light emitting diode
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
USD728473S1 (en) * 2013-01-31 2015-05-05 Omron Corporation Adapter for connecting bus bars to microswitch

Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369289A (en) * 1991-10-30 1994-11-29 Toyoda Gosei Co. Ltd. Gallium nitride-based compound semiconductor light-emitting device and method for making the same
US5565656A (en) * 1994-11-30 1996-10-15 Lucent Technologies Inc. Self-fastening EMI shielding enclosures
US5652434A (en) 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US5838551A (en) * 1996-08-01 1998-11-17 Northern Telecom Limited Electronic package carrying an electronic component and assembly of mother board and electronic package
US6097040A (en) 1997-07-23 2000-08-01 Sharp Kabushiki Kaisha Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad
US6153894A (en) 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
US6281526B1 (en) 1997-03-05 2001-08-28 Kabushiki Kaisha Toshiba Nitride compound light emitting device and method for fabricating same
US6287947B1 (en) 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6344665B1 (en) 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
US6495862B1 (en) 1998-12-24 2002-12-17 Kabushiki Kaisha Toshiba Nitride semiconductor LED with embossed lead-out surface
US6603152B2 (en) * 2000-09-04 2003-08-05 Samsung Electro-Mechanics Co., Ltd. Blue light emitting diode with electrode structure for distributing a current density
US6642548B1 (en) * 2000-10-20 2003-11-04 Emcore Corporation Light-emitting diodes with loop and strip electrodes and with wide medial sections
US6844571B2 (en) 1999-12-22 2005-01-18 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6847052B2 (en) 2002-06-17 2005-01-25 Kopin Corporation Light-emitting diode device geometry
US6867982B2 (en) * 2000-02-29 2005-03-15 Murata Manufacturing Co., Ltd. High frequency component and communication apparatus incorporating the same
USD521952S1 (en) 2004-02-23 2006-05-30 Kabushiki Kaisha Toshiba Semiconductor device
US20060131600A1 (en) * 2004-03-05 2006-06-22 Junichi Nakaoka Light transmitting window member, semiconductor package provided with light transmitting window member and method for manufacturing light transmitting window member
US20070075323A1 (en) * 2005-09-30 2007-04-05 Tdk Corporation Light emitting apparatus
US20070085089A1 (en) * 2005-10-13 2007-04-19 Advanced Optoelectronic Technology Inc. High power light emitting diode
US7312998B2 (en) * 2005-02-08 2007-12-25 Kabushiki Kaisha Toshiba Heat radiating apparatus in electronic device and heat radiating method
US7319044B2 (en) * 2003-12-23 2008-01-15 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device and method for manufacturing the same
USD566056S1 (en) * 2006-12-20 2008-04-08 Cree, Inc. LED chip
USD580888S1 (en) 2006-05-09 2008-11-18 Semi-Photonics Co., Ltd. Light emitting diode device with electrode
USD593968S1 (en) * 2007-09-07 2009-06-09 Cree, Inc. LED chip
US7576367B2 (en) * 2006-05-17 2009-08-18 Sanken Electric Co., Ltd. High-efficiency, overvoltage-protected, light-emitting semiconductor device
USD599748S1 (en) 2008-06-12 2009-09-08 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD606949S1 (en) * 2008-06-12 2009-12-29 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device

Patent Citations (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369289A (en) * 1991-10-30 1994-11-29 Toyoda Gosei Co. Ltd. Gallium nitride-based compound semiconductor light-emitting device and method for making the same
US6204512B1 (en) 1993-04-28 2001-03-20 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor device and method of producing the same
US5652434A (en) 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US5565656A (en) * 1994-11-30 1996-10-15 Lucent Technologies Inc. Self-fastening EMI shielding enclosures
US5838551A (en) * 1996-08-01 1998-11-17 Northern Telecom Limited Electronic package carrying an electronic component and assembly of mother board and electronic package
US6281526B1 (en) 1997-03-05 2001-08-28 Kabushiki Kaisha Toshiba Nitride compound light emitting device and method for fabricating same
US6097040A (en) 1997-07-23 2000-08-01 Sharp Kabushiki Kaisha Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad
US6153894A (en) 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
US6495862B1 (en) 1998-12-24 2002-12-17 Kabushiki Kaisha Toshiba Nitride semiconductor LED with embossed lead-out surface
US6287947B1 (en) 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6844571B2 (en) 1999-12-22 2005-01-18 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6867982B2 (en) * 2000-02-29 2005-03-15 Murata Manufacturing Co., Ltd. High frequency component and communication apparatus incorporating the same
US6344665B1 (en) 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
US6603152B2 (en) * 2000-09-04 2003-08-05 Samsung Electro-Mechanics Co., Ltd. Blue light emitting diode with electrode structure for distributing a current density
US6642548B1 (en) * 2000-10-20 2003-11-04 Emcore Corporation Light-emitting diodes with loop and strip electrodes and with wide medial sections
US6847052B2 (en) 2002-06-17 2005-01-25 Kopin Corporation Light-emitting diode device geometry
US7319044B2 (en) * 2003-12-23 2008-01-15 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device and method for manufacturing the same
USD521952S1 (en) 2004-02-23 2006-05-30 Kabushiki Kaisha Toshiba Semiconductor device
US20060131600A1 (en) * 2004-03-05 2006-06-22 Junichi Nakaoka Light transmitting window member, semiconductor package provided with light transmitting window member and method for manufacturing light transmitting window member
US7312998B2 (en) * 2005-02-08 2007-12-25 Kabushiki Kaisha Toshiba Heat radiating apparatus in electronic device and heat radiating method
US20070075323A1 (en) * 2005-09-30 2007-04-05 Tdk Corporation Light emitting apparatus
US20070085089A1 (en) * 2005-10-13 2007-04-19 Advanced Optoelectronic Technology Inc. High power light emitting diode
USD580888S1 (en) 2006-05-09 2008-11-18 Semi-Photonics Co., Ltd. Light emitting diode device with electrode
US7576367B2 (en) * 2006-05-17 2009-08-18 Sanken Electric Co., Ltd. High-efficiency, overvoltage-protected, light-emitting semiconductor device
USD566056S1 (en) * 2006-12-20 2008-04-08 Cree, Inc. LED chip
USD593968S1 (en) * 2007-09-07 2009-06-09 Cree, Inc. LED chip
USD599748S1 (en) 2008-06-12 2009-09-08 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD606949S1 (en) * 2008-06-12 2009-12-29 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD645008S1 (en) * 2010-11-08 2011-09-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD675581S1 (en) * 2011-01-21 2013-02-05 Cree, Inc. Light emitting diode
USD689830S1 (en) * 2011-01-21 2013-09-17 Cree, Inc. Light emitting diode
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
USD672731S1 (en) * 2011-01-24 2012-12-18 Cree, Inc. Light emitting diode
USD682225S1 (en) * 2011-01-24 2013-05-14 Cree, Inc. Light emitting diode
USD728473S1 (en) * 2013-01-31 2015-05-05 Omron Corporation Adapter for connecting bus bars to microswitch

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