USD624510S1 - Light emitting diode device - Google Patents
Light emitting diode device Download PDFInfo
- Publication number
- USD624510S1 USD624510S1 US29/346,321 US34632109F USD624510S US D624510 S1 USD624510 S1 US D624510S1 US 34632109 F US34632109 F US 34632109F US D624510 S USD624510 S US D624510S
- Authority
- US
- United States
- Prior art keywords
- light emitting
- emitting diode
- diode device
- view
- drawings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
It will be understood that the dash lines presented in the drawings are for illustration only, and do not form a part of the claimed design.
Claims (1)
- The ornamental design for a light emitting diode device, as shown and described in the drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29/346,321 USD624510S1 (en) | 2009-10-30 | 2009-10-30 | Light emitting diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29/346,321 USD624510S1 (en) | 2009-10-30 | 2009-10-30 | Light emitting diode device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USD624510S1 true USD624510S1 (en) | 2010-09-28 |
Family
ID=42760572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US29/346,321 Expired - Lifetime USD624510S1 (en) | 2009-10-30 | 2009-10-30 | Light emitting diode device |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | USD624510S1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD645008S1 (en) * | 2010-11-08 | 2011-09-13 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode device |
| USD672731S1 (en) * | 2011-01-24 | 2012-12-18 | Cree, Inc. | Light emitting diode |
| USD675581S1 (en) * | 2011-01-21 | 2013-02-05 | Cree, Inc. | Light emitting diode |
| USD682225S1 (en) * | 2011-01-24 | 2013-05-14 | Cree, Inc. | Light emitting diode |
| US8698184B2 (en) | 2011-01-21 | 2014-04-15 | Cree, Inc. | Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature |
| USD728473S1 (en) * | 2013-01-31 | 2015-05-05 | Omron Corporation | Adapter for connecting bus bars to microswitch |
Citations (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369289A (en) * | 1991-10-30 | 1994-11-29 | Toyoda Gosei Co. Ltd. | Gallium nitride-based compound semiconductor light-emitting device and method for making the same |
| US5565656A (en) * | 1994-11-30 | 1996-10-15 | Lucent Technologies Inc. | Self-fastening EMI shielding enclosures |
| US5652434A (en) | 1993-04-28 | 1997-07-29 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor |
| US5838551A (en) * | 1996-08-01 | 1998-11-17 | Northern Telecom Limited | Electronic package carrying an electronic component and assembly of mother board and electronic package |
| US6097040A (en) | 1997-07-23 | 2000-08-01 | Sharp Kabushiki Kaisha | Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad |
| US6153894A (en) | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
| US6281526B1 (en) | 1997-03-05 | 2001-08-28 | Kabushiki Kaisha Toshiba | Nitride compound light emitting device and method for fabricating same |
| US6287947B1 (en) | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
| US6344665B1 (en) | 2000-06-23 | 2002-02-05 | Arima Optoelectronics Corp. | Electrode structure of compound semiconductor device |
| US6495862B1 (en) | 1998-12-24 | 2002-12-17 | Kabushiki Kaisha Toshiba | Nitride semiconductor LED with embossed lead-out surface |
| US6603152B2 (en) * | 2000-09-04 | 2003-08-05 | Samsung Electro-Mechanics Co., Ltd. | Blue light emitting diode with electrode structure for distributing a current density |
| US6642548B1 (en) * | 2000-10-20 | 2003-11-04 | Emcore Corporation | Light-emitting diodes with loop and strip electrodes and with wide medial sections |
| US6844571B2 (en) | 1999-12-22 | 2005-01-18 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
| US6847052B2 (en) | 2002-06-17 | 2005-01-25 | Kopin Corporation | Light-emitting diode device geometry |
| US6867982B2 (en) * | 2000-02-29 | 2005-03-15 | Murata Manufacturing Co., Ltd. | High frequency component and communication apparatus incorporating the same |
| USD521952S1 (en) | 2004-02-23 | 2006-05-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20060131600A1 (en) * | 2004-03-05 | 2006-06-22 | Junichi Nakaoka | Light transmitting window member, semiconductor package provided with light transmitting window member and method for manufacturing light transmitting window member |
| US20070075323A1 (en) * | 2005-09-30 | 2007-04-05 | Tdk Corporation | Light emitting apparatus |
| US20070085089A1 (en) * | 2005-10-13 | 2007-04-19 | Advanced Optoelectronic Technology Inc. | High power light emitting diode |
| US7312998B2 (en) * | 2005-02-08 | 2007-12-25 | Kabushiki Kaisha Toshiba | Heat radiating apparatus in electronic device and heat radiating method |
| US7319044B2 (en) * | 2003-12-23 | 2008-01-15 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device and method for manufacturing the same |
| USD566056S1 (en) * | 2006-12-20 | 2008-04-08 | Cree, Inc. | LED chip |
| USD580888S1 (en) | 2006-05-09 | 2008-11-18 | Semi-Photonics Co., Ltd. | Light emitting diode device with electrode |
| USD593968S1 (en) * | 2007-09-07 | 2009-06-09 | Cree, Inc. | LED chip |
| US7576367B2 (en) * | 2006-05-17 | 2009-08-18 | Sanken Electric Co., Ltd. | High-efficiency, overvoltage-protected, light-emitting semiconductor device |
| USD599748S1 (en) | 2008-06-12 | 2009-09-08 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode device |
| USD606949S1 (en) * | 2008-06-12 | 2009-12-29 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode device |
-
2009
- 2009-10-30 US US29/346,321 patent/USD624510S1/en not_active Expired - Lifetime
Patent Citations (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369289A (en) * | 1991-10-30 | 1994-11-29 | Toyoda Gosei Co. Ltd. | Gallium nitride-based compound semiconductor light-emitting device and method for making the same |
| US6204512B1 (en) | 1993-04-28 | 2001-03-20 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
| US5652434A (en) | 1993-04-28 | 1997-07-29 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor |
| US5565656A (en) * | 1994-11-30 | 1996-10-15 | Lucent Technologies Inc. | Self-fastening EMI shielding enclosures |
| US5838551A (en) * | 1996-08-01 | 1998-11-17 | Northern Telecom Limited | Electronic package carrying an electronic component and assembly of mother board and electronic package |
| US6281526B1 (en) | 1997-03-05 | 2001-08-28 | Kabushiki Kaisha Toshiba | Nitride compound light emitting device and method for fabricating same |
| US6097040A (en) | 1997-07-23 | 2000-08-01 | Sharp Kabushiki Kaisha | Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad |
| US6153894A (en) | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
| US6495862B1 (en) | 1998-12-24 | 2002-12-17 | Kabushiki Kaisha Toshiba | Nitride semiconductor LED with embossed lead-out surface |
| US6287947B1 (en) | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
| US6844571B2 (en) | 1999-12-22 | 2005-01-18 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
| US6867982B2 (en) * | 2000-02-29 | 2005-03-15 | Murata Manufacturing Co., Ltd. | High frequency component and communication apparatus incorporating the same |
| US6344665B1 (en) | 2000-06-23 | 2002-02-05 | Arima Optoelectronics Corp. | Electrode structure of compound semiconductor device |
| US6603152B2 (en) * | 2000-09-04 | 2003-08-05 | Samsung Electro-Mechanics Co., Ltd. | Blue light emitting diode with electrode structure for distributing a current density |
| US6642548B1 (en) * | 2000-10-20 | 2003-11-04 | Emcore Corporation | Light-emitting diodes with loop and strip electrodes and with wide medial sections |
| US6847052B2 (en) | 2002-06-17 | 2005-01-25 | Kopin Corporation | Light-emitting diode device geometry |
| US7319044B2 (en) * | 2003-12-23 | 2008-01-15 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device and method for manufacturing the same |
| USD521952S1 (en) | 2004-02-23 | 2006-05-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20060131600A1 (en) * | 2004-03-05 | 2006-06-22 | Junichi Nakaoka | Light transmitting window member, semiconductor package provided with light transmitting window member and method for manufacturing light transmitting window member |
| US7312998B2 (en) * | 2005-02-08 | 2007-12-25 | Kabushiki Kaisha Toshiba | Heat radiating apparatus in electronic device and heat radiating method |
| US20070075323A1 (en) * | 2005-09-30 | 2007-04-05 | Tdk Corporation | Light emitting apparatus |
| US20070085089A1 (en) * | 2005-10-13 | 2007-04-19 | Advanced Optoelectronic Technology Inc. | High power light emitting diode |
| USD580888S1 (en) | 2006-05-09 | 2008-11-18 | Semi-Photonics Co., Ltd. | Light emitting diode device with electrode |
| US7576367B2 (en) * | 2006-05-17 | 2009-08-18 | Sanken Electric Co., Ltd. | High-efficiency, overvoltage-protected, light-emitting semiconductor device |
| USD566056S1 (en) * | 2006-12-20 | 2008-04-08 | Cree, Inc. | LED chip |
| USD593968S1 (en) * | 2007-09-07 | 2009-06-09 | Cree, Inc. | LED chip |
| USD599748S1 (en) | 2008-06-12 | 2009-09-08 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode device |
| USD606949S1 (en) * | 2008-06-12 | 2009-12-29 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD645008S1 (en) * | 2010-11-08 | 2011-09-13 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode device |
| USD675581S1 (en) * | 2011-01-21 | 2013-02-05 | Cree, Inc. | Light emitting diode |
| USD689830S1 (en) * | 2011-01-21 | 2013-09-17 | Cree, Inc. | Light emitting diode |
| US8698184B2 (en) | 2011-01-21 | 2014-04-15 | Cree, Inc. | Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature |
| USD672731S1 (en) * | 2011-01-24 | 2012-12-18 | Cree, Inc. | Light emitting diode |
| USD682225S1 (en) * | 2011-01-24 | 2013-05-14 | Cree, Inc. | Light emitting diode |
| USD728473S1 (en) * | 2013-01-31 | 2015-05-05 | Omron Corporation | Adapter for connecting bus bars to microswitch |
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