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USD606949S1 - Light emitting diode device - Google Patents

Light emitting diode device Download PDF

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Publication number
USD606949S1
USD606949S1 US29/319,676 US31967608F USD606949S US D606949 S1 USD606949 S1 US D606949S1 US 31967608 F US31967608 F US 31967608F US D606949 S USD606949 S US D606949S
Authority
US
United States
Prior art keywords
light emitting
emitting diode
diode device
view
ornamental design
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US29/319,676
Inventor
Wen-Huang Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SemiLEDs Optoelectronics Co Ltd
Original Assignee
SemiLEDs Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SemiLEDs Optoelectronics Co Ltd filed Critical SemiLEDs Optoelectronics Co Ltd
Priority to US29/319,676 priority Critical patent/USD606949S1/en
Assigned to SemiLEDs Optoelectronics Co., Ltd. reassignment SemiLEDs Optoelectronics Co., Ltd. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LIU, WEN-HUANG
Application granted granted Critical
Publication of USD606949S1 publication Critical patent/USD606949S1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

FIG. 1 is a top view of an embodiment of our new design;
FIG. 2 is a cross-sectional view taken along line 2—2 in FIG. 1;
FIG. 3 is a right side view of FIG. 1; the left side view is a mirror image of the right side view.
FIG. 4 is a front view of FIG. 1; and,
FIG. 5 is a rear view of FIG. 1.

Claims (1)

    CLAIM
  1. The ornamental design for a light emitting diode device, as shown and described.
US29/319,676 2008-06-12 2008-06-12 Light emitting diode device Expired - Lifetime USD606949S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/319,676 USD606949S1 (en) 2008-06-12 2008-06-12 Light emitting diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29/319,676 USD606949S1 (en) 2008-06-12 2008-06-12 Light emitting diode device

Publications (1)

Publication Number Publication Date
USD606949S1 true USD606949S1 (en) 2009-12-29

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Family Applications (1)

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US29/319,676 Expired - Lifetime USD606949S1 (en) 2008-06-12 2008-06-12 Light emitting diode device

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US (1) USD606949S1 (en)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD618637S1 (en) * 2009-10-30 2010-06-29 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD620460S1 (en) * 2009-10-30 2010-07-27 SemiLEDs, Optoelectronics Co., Ltd. Light emitting diode device
USD620897S1 (en) * 2009-10-29 2010-08-03 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD624510S1 (en) * 2009-10-30 2010-09-28 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD627747S1 (en) * 2010-03-18 2010-11-23 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD631017S1 (en) * 2009-09-28 2011-01-18 Toyoda Gosei Co., Ltd. Light emitting diode chip
USD631018S1 (en) * 2009-09-28 2011-01-18 Toyoda Gosei Co., Ltd. Light emitting diode chip
USD633876S1 (en) * 2009-10-30 2011-03-08 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD638377S1 (en) * 2010-03-23 2011-05-24 Liang-Jyi Yan High-power light emitting diode chip
USD645008S1 (en) 2010-11-08 2011-09-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD647493S1 (en) * 2010-11-19 2011-10-25 Tekcore Co., Ltd. Light-emitting diode
USD647494S1 (en) * 2010-09-09 2011-10-25 Tekcore Co., Ltd. Light-emitting diode
USD647495S1 (en) * 2010-10-15 2011-10-25 Tekcore Co., Ltd Light-emitting diode
US8283652B2 (en) 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
USD676001S1 (en) * 2011-04-07 2013-02-12 Epistar Corporation Light emitting diode
USD684549S1 (en) * 2011-10-28 2013-06-18 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD684548S1 (en) * 2011-10-28 2013-06-18 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD684940S1 (en) * 2011-10-28 2013-06-25 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD684941S1 (en) * 2011-10-28 2013-06-25 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD685334S1 (en) * 2011-10-28 2013-07-02 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD687395S1 (en) * 2011-10-28 2013-08-06 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD689834S1 (en) * 2011-10-28 2013-09-17 Semileds Opto Electronics Co., Ltd. LED chip
USD690670S1 (en) * 2011-10-28 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD693779S1 (en) * 2011-10-28 2013-11-19 SemiLEDs Optoelectronics Co., Ltd. LED chip
US8723160B2 (en) 2010-07-28 2014-05-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having peripheral electrode frame and method of fabrication
USD730303S1 (en) * 2014-06-10 2015-05-26 High Power Opto, Inc. LED chip

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US6097040A (en) * 1997-07-23 2000-08-01 Sharp Kabushiki Kaisha Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
US6281526B1 (en) * 1997-03-05 2001-08-28 Kabushiki Kaisha Toshiba Nitride compound light emitting device and method for fabricating same
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6344665B1 (en) * 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
US6495862B1 (en) * 1998-12-24 2002-12-17 Kabushiki Kaisha Toshiba Nitride semiconductor LED with embossed lead-out surface
US6844571B2 (en) * 1999-12-22 2005-01-18 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6847052B2 (en) * 2002-06-17 2005-01-25 Kopin Corporation Light-emitting diode device geometry
USD521952S1 (en) * 2004-02-23 2006-05-30 Kabushiki Kaisha Toshiba Semiconductor device

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652434A (en) * 1993-04-28 1997-07-29 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US6204512B1 (en) * 1993-04-28 2001-03-20 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor device and method of producing the same
US6281526B1 (en) * 1997-03-05 2001-08-28 Kabushiki Kaisha Toshiba Nitride compound light emitting device and method for fabricating same
US6097040A (en) * 1997-07-23 2000-08-01 Sharp Kabushiki Kaisha Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
US6495862B1 (en) * 1998-12-24 2002-12-17 Kabushiki Kaisha Toshiba Nitride semiconductor LED with embossed lead-out surface
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6844571B2 (en) * 1999-12-22 2005-01-18 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6344665B1 (en) * 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
US6847052B2 (en) * 2002-06-17 2005-01-25 Kopin Corporation Light-emitting diode device geometry
USD521952S1 (en) * 2004-02-23 2006-05-30 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD631017S1 (en) * 2009-09-28 2011-01-18 Toyoda Gosei Co., Ltd. Light emitting diode chip
USD631018S1 (en) * 2009-09-28 2011-01-18 Toyoda Gosei Co., Ltd. Light emitting diode chip
USD620897S1 (en) * 2009-10-29 2010-08-03 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD624510S1 (en) * 2009-10-30 2010-09-28 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD620460S1 (en) * 2009-10-30 2010-07-27 SemiLEDs, Optoelectronics Co., Ltd. Light emitting diode device
USD633876S1 (en) * 2009-10-30 2011-03-08 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD618637S1 (en) * 2009-10-30 2010-06-29 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD627747S1 (en) * 2010-03-18 2010-11-23 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD638377S1 (en) * 2010-03-23 2011-05-24 Liang-Jyi Yan High-power light emitting diode chip
US8723160B2 (en) 2010-07-28 2014-05-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having peripheral electrode frame and method of fabrication
US8283652B2 (en) 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
USD647494S1 (en) * 2010-09-09 2011-10-25 Tekcore Co., Ltd. Light-emitting diode
USD647495S1 (en) * 2010-10-15 2011-10-25 Tekcore Co., Ltd Light-emitting diode
USD645008S1 (en) 2010-11-08 2011-09-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode device
USD647493S1 (en) * 2010-11-19 2011-10-25 Tekcore Co., Ltd. Light-emitting diode
USD676001S1 (en) * 2011-04-07 2013-02-12 Epistar Corporation Light emitting diode
USD700152S1 (en) * 2011-04-07 2014-02-25 Epistar Corporation Light emitting diode
USD737228S1 (en) 2011-04-07 2015-08-25 Epistar Corporation Light emitting diode
USD680977S1 (en) 2011-04-07 2013-04-30 Epistar Corporation Light emitting diode
USD684941S1 (en) * 2011-10-28 2013-06-25 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD685334S1 (en) * 2011-10-28 2013-07-02 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD687395S1 (en) * 2011-10-28 2013-08-06 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD689834S1 (en) * 2011-10-28 2013-09-17 Semileds Opto Electronics Co., Ltd. LED chip
USD690670S1 (en) * 2011-10-28 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD693779S1 (en) * 2011-10-28 2013-11-19 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD684549S1 (en) * 2011-10-28 2013-06-18 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD684940S1 (en) * 2011-10-28 2013-06-25 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD684548S1 (en) * 2011-10-28 2013-06-18 SemiLEDs Optoelectronics Co., Ltd. LED chip
USD730303S1 (en) * 2014-06-10 2015-05-26 High Power Opto, Inc. LED chip

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