US2636012A - Process for making a thermistor by oxidation of a nickel manganese alloy - Google Patents
Process for making a thermistor by oxidation of a nickel manganese alloy Download PDFInfo
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- US2636012A US2636012A US133608A US13360849A US2636012A US 2636012 A US2636012 A US 2636012A US 133608 A US133608 A US 133608A US 13360849 A US13360849 A US 13360849A US 2636012 A US2636012 A US 2636012A
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- foil
- temperature
- thermistor
- nickel
- per cent
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- 238000000034 method Methods 0.000 title claims description 20
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 title claims description 17
- 230000003647 oxidation Effects 0.000 title description 5
- 238000007254 oxidation reaction Methods 0.000 title description 5
- 229910000914 Mn alloy Inorganic materials 0.000 title description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011888 foil Substances 0.000 description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052596 spinel Inorganic materials 0.000 description 6
- 239000011029 spinel Substances 0.000 description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- PPNAOCWZXJOHFK-UHFFFAOYSA-N manganese(2+);oxygen(2-) Chemical class [O-2].[Mn+2] PPNAOCWZXJOHFK-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- JEMDLNFQNCQAKN-UHFFFAOYSA-N nickel;oxomanganese Chemical class [Ni].[Mn]=O JEMDLNFQNCQAKN-UHFFFAOYSA-N 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
Definitions
- This invention relates to thermistors generally and, more particularly, it relates to a method for the production of thin thermally sensitive conductive flakes.
- thermoistor will be used in this specification to designate a thermally sensitive resistive element.
- One of the principal present methods for manufacturing bimetal oxide thermistor elements comprises the sintering and pressing together into a thin foil the preformed oxides of the metals used. This method has been found not entirely satisfactory in that the surfaces of the thermistor foils are not uniformly smooth, which results in a degradation of electrical properties; also the thickness of the foils is in the order of several decades of microns. This order of thickness is undesirable in many cases where thermistor flakes are utilized.
- This invention pertains to a method for making bimetal oxide thermistor flakes of the proper crystalline structure having a smooth surface and having a thickness of, for example, from onehalf micron to twenty-five microns.
- One of the objects of this invention is to produce a thin thermistor flake having sta'ble electrical properties.
- Another object of this invention is the production of a thin thermistor flake which is relatively free from mechanical irregularities.
- a further object is to produce thermistor flakes comprising two metal oxides, having a thickness less than twenty-five microns and a relatively large area.
- the invention comprises a method for making a bimetal thermistor material in thin sheets of from approximately one-half micron to about twenty-five microns thickness having a spinel type crystalline structure.
- a rolled sample of -20 atomic per cent manganese-nickel of the order of one-third to eighteen microns thick is placed in an oxidizing atmosphere furnace at a temperature between 600 C. and 700 C. and the furnace is then allowed to cool to a temperature in the range from about 450 C. to about 550 C, in not less than sixteen hours to produce oxidation.
- the furnace is then readjusted to come up to a temperature of about 875 C. to 1150 C. in about two hours to produce the spinel type crystalline structure in the sample.
- a feature of this invention lies in the smoothness of the surfaces of the thermistor flake. This is of particular moment in bolometer and similar devicesinvolving translation of heat waves or of an electron beam which is used to scan the thermistor flake.
- a further feature of the invention is the oxidation of the bimetal alloy while in the foil form.
- Fig. 1 illustrates a typical furnace which can be used to carry out the process
- Fig. 2 illustrates a typical foil held in a frame.
- the furnace 4 has an evacuator lead 5, an input lead 6, a thermostat 1, and a heater element ID.
- a reduction atmosphere may be piped into the furnace 4 through lead 6.
- the frameheld foil 9 is placed in the furnace on tray 8 at a time and in a manner to be described later.
- a circular metal frame I l is shown holding a foil l2. It is to be understood that it is not necessary to uses. frame to hold the" foil but as one alternative, the foil can be treated without a support. In the instance where a frame is used, however, as when a very thin foil is used, the foil may be welded to the frame to hold the foil securely so that it will remain flat during the process. Any shape frame may be used.
- a foil of 80-20 atomic per cent manganese-nickel for example is formed by one of the known means, such as evaporation or rolling, depending upon the thickness of the thermistor flake desired. It is to be noted, however, that the percentage Of manganese need not be exactly 80 per cent. It may vary from 40 per cent to 90 per cent.
- This thin sheet can be cut into samples having the cross-sectional area desired. The samples can then be welded to frames, if desired, placed in a tray 8, which can be made of nickel chromium alloy, and then placed in an air atmosphere furnace 4 which has a temperature of from 600 C. approximately, to 700 C. approximately. It is left in thefurnace a minimum of sixteen hours, during which time the temperature of the furnace is allowed to come down to a range of 450 C. approximately, to 500 C. ap-
- the sample is left or again placed in an air atmosphere furnace 4 having a temperature of. about 450 C. and the furnace controls are so adjusted that the temperature will come up to about 875 C. to 1150 C. in approximately two hours.
- the resultant product is a smooth surfaced thin thermistor flake comprised of a relatively uniform mixture of nickel and manganese oxides and having a uniform thickness in a range extending from one-half micron to twenty-five microns.
- the crystalline structure is of the spinel type which gives the flake a resistivity of the same order of magnitude as 80-20 atomic per cent manganese-nickel oxides thermistor material when produced by the sintered oxide powder method.
- a process for making thin flakes of uniformly mixed oxides of 40-60 to 90-10 atomic per cent manganese-nickel alloy having a thickness of from one-half micron to twenty-five microns which comprises forming a uniformly thin foil of approximately 40-60 to 90-10 atomic per cent manganese-nickel of from one-half to twentyfive microns thickness, heating the manganesenickel alloy foil in an oxidizing atmosphere at a temperature of from 600 C. to 700 C., gradually cooling the foil to a temperature of from 450 C. to 550 C., keeping said foil at a temperature of at least 450 C. for not less than sixteen hours, and heating the resultant product at a temperature between about 875 C. and 1150 C. to produce a spinel type crystalline structure.
- a process for making thin flakes of uniformly mixed oxides of approximately 40-60 to 90-10 atomic per cent manganese-nickel alloy having a thickness of from one-half micron to twenty-five microns comprising the steps of forming a uniformly thin foil of approximately 40-60 to 90-10 atomic per cent manganese-nickel of from one-third micron to 18 microns thickness, placing said foil in an oxygen atmosphere temperature of from 600 C. to 700'C., allowing the foil to gradually cool to a temperature of from 450 C. to 550 C., keeping said foil at a temperature of at least 450 C. for not less than sixteen hours, and then placing the resultant product in a furnace which is allowed to come up to a temperature of from 875 C. to 1150 C. in an approximate two-hour interval to produce 2.
- spinel type crystalline structure comprising the steps of forming a uniformly thin foil of approximately 40-60 to 90-10 atomic per cent manganese-nickel of from one-third micron to 18 microns thickness, placing said foil in
- a process for making flakes of oxidized -20 atomic per cent manganese-nickel having a uniform thickness of from one-half micron to twenty-five microns comprising the steps of forming a uniformly thin foil of 80-20 atomic per cent manganese-nickel alloy of from one-half to twenty-five microns thickness, heating the manganese-nickel alloy foil in an oxygen atmosphere temperature of from 600 C. to 700 C., allowing the foil temperature to gradually drop to from 450 C. to 550 C., and keeping the foil at a temperature between 450 C. and 550 C. for at least sixteen hours.
- a process for making flakes of mixed oxides of 40-60 to -10 atomic per cent manganesenickel alloy having a thickness of from one-half micron to 25 microns which comprises forming a uniformly thin foil of from one-half to 25 microns thickness of alloy, heating the foil in an oxidizing atmosphere at a temperature of from 600 C. to 700 C., gradually cooling the foil to from 450 C. to 550 C., and maintaining the foil at a temperature of at least 450 C. for of the order of sixteen hours.
- the process for making thin flakes of uniformly mixed oxides of nickel and manganese wherein the atomic ratio of the metallic constituents of the oxides is from 40 to 90per cent manganese and 60 to 10 per cent nickel which comprises forming a uniformly thin foil of an alloy consisting of from 40 to 90 atomic per cent manganese and 60 to 10 atomic per cent nickel and of from one-half to 25 microns thick, heating the manganese-nickel alloy foil in an oxidizing atmosphere at a temperature from 600 to 700 C., and gradually cooling the foil to a temperature of from 450 to 550 C. over a period of not less than 16 hours.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
April 21 1953 H (31-! ls-r N 2636012 PROCESS FOR MAkm '2 T fififim BY oxmxrzou OF A mam. MANGANESE ALLOY Filed Dec. 17, 1949 FIG./
THERHOS TA 7' INVEN TOR H. CHRISTENSEN BY E A T TORNE V Patentecl Apr. 21, 1953 PROCESS FOR MAKING A THERMISTOR BY OXIDATION ALLOY OF A NICKEL MANGANESE Howard Christensen, Springfield, N. 5., assignorto Bell Telephone Laboratories, Incorporated, New York, N. Y., a corporation of New York Application December 1'7, 1949, Serial No. 133,608
5 Claims.
This invention relates to thermistors generally and, more particularly, it relates to a method for the production of thin thermally sensitive conductive flakes.
It is to be noted that the term thermistor will be used in this specification to designate a thermally sensitive resistive element.
In the prior art, there are several methods for producing thermally sensitive conductive flakes. Copper oxide has been produced having a thicknes of 25 microns and a resistance of from ohm centimeters at 25 C. to 10 ohm centimeters, depending on the type oxide used. However, copper oxide and other single metal oxide thermistor materials do not have very stable electrical properties and consequently are unsuitable as articles of commerce. It is known also that certain bimetal oxides make better thermistors than do the single metal oxides. The. electrical properties of the bimetal oxide thermistors are much more stable which makes them commercially useful. One of the principal present methods for manufacturing bimetal oxide thermistor elements comprises the sintering and pressing together into a thin foil the preformed oxides of the metals used. This method has been found not entirely satisfactory in that the surfaces of the thermistor foils are not uniformly smooth, which results in a degradation of electrical properties; also the thickness of the foils is in the order of several decades of microns. This order of thickness is undesirable in many cases where thermistor flakes are utilized.
It has also been attempted to produce bimetal thermistor elements by oxidizing an alloy of the two metals. Up to the present time, however, this has resulted in a division of the two component oxides into two separate pieces, which is, of course, unsatisfactory.
This invention pertains to a method for making bimetal oxide thermistor flakes of the proper crystalline structure having a smooth surface and having a thickness of, for example, from onehalf micron to twenty-five microns.
One of the objects of this invention is to produce a thin thermistor flake having sta'ble electrical properties.
Another object of this invention is the production of a thin thermistor flake which is relatively free from mechanical irregularities.
A further object is to produce thermistor flakes comprising two metal oxides, having a thickness less than twenty-five microns and a relatively large area.
Still another object is the improvement of methods for making thermistor flakes generally. The invention comprises a method for making a bimetal thermistor material in thin sheets of from approximately one-half micron to about twenty-five microns thickness having a spinel type crystalline structure. For example, in one embodiment a rolled sample of -20 atomic per cent manganese-nickel of the order of one-third to eighteen microns thick is placed in an oxidizing atmosphere furnace at a temperature between 600 C. and 700 C. and the furnace is then allowed to cool to a temperature in the range from about 450 C. to about 550 C, in not less than sixteen hours to produce oxidation. The furnace is then readjusted to come up to a temperature of about 875 C. to 1150 C. in about two hours to produce the spinel type crystalline structure in the sample.
A feature of this invention lies in the smoothness of the surfaces of the thermistor flake. This is of particular moment in bolometer and similar devicesinvolving translation of heat waves or of an electron beam which is used to scan the thermistor flake.
A further feature of the invention is the oxidation of the bimetal alloy while in the foil form. The above-mentioned and other objects and features will be more fully understood from the drawing and the following description. In the drawing:
Fig. 1 illustrates a typical furnace which can be used to carry out the process; and
Fig. 2 illustrates a typical foil held in a frame.
In Fig. 1 the furnace 4 has an evacuator lead 5, an input lead 6, a thermostat 1, and a heater element ID. A reduction atmosphere may be piped into the furnace 4 through lead 6. The frameheld foil 9 is placed in the furnace on tray 8 at a time and in a manner to be described later.
In Fig. 2 a circular metal frame I l is shown holding a foil l2. It is to be understood that it is not necessary to uses. frame to hold the" foil but as one alternative, the foil can be treated without a support. In the instance where a frame is used, however, as when a very thin foil is used, the foil may be welded to the frame to hold the foil securely so that it will remain flat during the process. Any shape frame may be used.
In a preferred embodiment of this invention, a foil of 80-20 atomic per cent manganese-nickel for example, is formed by one of the known means, such as evaporation or rolling, depending upon the thickness of the thermistor flake desired. It is to be noted, however, that the percentage Of manganese need not be exactly 80 per cent. It may vary from 40 per cent to 90 per cent. This thin sheet can be cut into samples having the cross-sectional area desired. The samples can then be welded to frames, if desired, placed in a tray 8, which can be made of nickel chromium alloy, and then placed in an air atmosphere furnace 4 which has a temperature of from 600 C. approximately, to 700 C. approximately. It is left in thefurnace a minimum of sixteen hours, during which time the temperature of the furnace is allowed to come down to a range of 450 C. approximately, to 500 C. ap-
proximately. This will produce complete oxidation of the nickel and the manganese Without a separation of the two oxides. The thermistor flake, however, is not yet completed, since the aforementioned heat treatment has not produced the proper crystalline structure in the foil. The
desired crystalline structure is known as a spinel formation.
To produce this crystalline formation, the sample is left or again placed in an air atmosphere furnace 4 having a temperature of. about 450 C. and the furnace controls are so adjusted that the temperature will come up to about 875 C. to 1150 C. in approximately two hours. The resultant product is a smooth surfaced thin thermistor flake comprised of a relatively uniform mixture of nickel and manganese oxides and having a uniform thickness in a range extending from one-half micron to twenty-five microns. The crystalline structure is of the spinel type which gives the flake a resistivity of the same order of magnitude as 80-20 atomic per cent manganese-nickel oxides thermistor material when produced by the sintered oxide powder method.
It is understood that only a preferred embodiment of the invention is described herein and that the method can be utilized to encompass many other types of bimetal thermistors without departing from the spirit or scope of the invention.
What is claimed is:
1. A process for making thin flakes of uniformly mixed oxides of 40-60 to 90-10 atomic per cent manganese-nickel alloy having a thickness of from one-half micron to twenty-five microns which comprises forming a uniformly thin foil of approximately 40-60 to 90-10 atomic per cent manganese-nickel of from one-half to twentyfive microns thickness, heating the manganesenickel alloy foil in an oxidizing atmosphere at a temperature of from 600 C. to 700 C., gradually cooling the foil to a temperature of from 450 C. to 550 C., keeping said foil at a temperature of at least 450 C. for not less than sixteen hours, and heating the resultant product at a temperature between about 875 C. and 1150 C. to produce a spinel type crystalline structure.
2. A process for making thin flakes of uniformly mixed oxides of approximately 40-60 to 90-10 atomic per cent manganese-nickel alloy having a thickness of from one-half micron to twenty-five microns comprising the steps of forming a uniformly thin foil of approximately 40-60 to 90-10 atomic per cent manganese-nickel of from one-third micron to 18 microns thickness, placing said foil in an oxygen atmosphere temperature of from 600 C. to 700'C., allowing the foil to gradually cool to a temperature of from 450 C. to 550 C., keeping said foil at a temperature of at least 450 C. for not less than sixteen hours, and then placing the resultant product in a furnace which is allowed to come up to a temperature of from 875 C. to 1150 C. in an approximate two-hour interval to produce 2. spinel type crystalline structure.
3. A process for making flakes of oxidized -20 atomic per cent manganese-nickel having a uniform thickness of from one-half micron to twenty-five microns comprising the steps of forming a uniformly thin foil of 80-20 atomic per cent manganese-nickel alloy of from one-half to twenty-five microns thickness, heating the manganese-nickel alloy foil in an oxygen atmosphere temperature of from 600 C. to 700 C., allowing the foil temperature to gradually drop to from 450 C. to 550 C., and keeping the foil at a temperature between 450 C. and 550 C. for at least sixteen hours.
4. A process for making flakes of mixed oxides of 40-60 to -10 atomic per cent manganesenickel alloy having a thickness of from one-half micron to 25 microns which comprises forming a uniformly thin foil of from one-half to 25 microns thickness of alloy, heating the foil in an oxidizing atmosphere at a temperature of from 600 C. to 700 C., gradually cooling the foil to from 450 C. to 550 C., and maintaining the foil at a temperature of at least 450 C. for of the order of sixteen hours.
5. The process for making thin flakes of uniformly mixed oxides of nickel and manganese wherein the atomic ratio of the metallic constituents of the oxides is from 40 to 90per cent manganese and 60 to 10 per cent nickel, which comprises forming a uniformly thin foil of an alloy consisting of from 40 to 90 atomic per cent manganese and 60 to 10 atomic per cent nickel and of from one-half to 25 microns thick, heating the manganese-nickel alloy foil in an oxidizing atmosphere at a temperature from 600 to 700 C., and gradually cooling the foil to a temperature of from 450 to 550 C. over a period of not less than 16 hours.
HOWARD CHRISTENSEN.
References Cited in the file of this patent UNITED STATES PATENTS Number Name Date 2,414,793 Becker et al. Jan. 28, 1947 2,462,162 Christensen et al. Feb. 22, 1949
Claims (1)
1. A PROCESS FOR MAKING THIN FLAKES OF UNIFORMLY MIXED OXIDES OF 40-60 TO 90-10 ATOMIC PER CENT MANGANESE-NICKEL ALLOY HAVING A THICKNESS OF FROM ONE-HALF MICRON TO TWENTY-FIVE MICRONS WHICH COMPRISES FORMING A UNIFORMLY THIN FOIL OF APPROXIMATELY 40-60 TO 90-10 ATOMIC PER CENT MANGANESE-NICKEL OF FROM ONE-HALF TO TWENTYFIVE MICRONS THICKNESS, HEATING THE MANGANESENICKEL ALLOY FOIL IN AN OXIDIZING ATMOSPHERE AT A TEMPERATURE OF FROM 600* C. TO 700*C., GRADUALLY COOLING THE FOIL TO A TEMPERATURE OF FROM 450* C. TO 550* C., KEEPING SAID FOIL AT A TEMPERATURE OF AT LEAST 450* C. FOR NOT LESS THAN SIXTEEN HOURS, AND HEATING THE RESULTANT PRODUCTION AT A TEMPERATURE BETWEEN ABOUT 875* C. AND 1150 C. TO PRODUCE A SPINEL TYPE CRYSTALLINE STRUCTURE.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US133608A US2636012A (en) | 1949-12-17 | 1949-12-17 | Process for making a thermistor by oxidation of a nickel manganese alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US133608A US2636012A (en) | 1949-12-17 | 1949-12-17 | Process for making a thermistor by oxidation of a nickel manganese alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2636012A true US2636012A (en) | 1953-04-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US133608A Expired - Lifetime US2636012A (en) | 1949-12-17 | 1949-12-17 | Process for making a thermistor by oxidation of a nickel manganese alloy |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US2636012A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2753423A (en) * | 1951-03-28 | 1956-07-03 | Hairy Rene Eugene | Arc suppressors for electric switchgear |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2414793A (en) * | 1945-06-29 | 1947-01-28 | Bell Telephone Labor Inc | Method of making resistors |
| US2462162A (en) * | 1944-07-03 | 1949-02-22 | Bell Telephone Labor Inc | Metallic oxide resistor |
-
1949
- 1949-12-17 US US133608A patent/US2636012A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2462162A (en) * | 1944-07-03 | 1949-02-22 | Bell Telephone Labor Inc | Metallic oxide resistor |
| US2414793A (en) * | 1945-06-29 | 1947-01-28 | Bell Telephone Labor Inc | Method of making resistors |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2753423A (en) * | 1951-03-28 | 1956-07-03 | Hairy Rene Eugene | Arc suppressors for electric switchgear |
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