US2462162A - Metallic oxide resistor - Google Patents
Metallic oxide resistor Download PDFInfo
- Publication number
- US2462162A US2462162A US543372A US54337244A US2462162A US 2462162 A US2462162 A US 2462162A US 543372 A US543372 A US 543372A US 54337244 A US54337244 A US 54337244A US 2462162 A US2462162 A US 2462162A
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- temperature
- resistor
- resistance
- sealing
- oxygen
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- 229910044991 metal oxide Inorganic materials 0.000 title description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 24
- 239000001301 oxygen Substances 0.000 description 24
- 229910052760 oxygen Inorganic materials 0.000 description 24
- 238000007789 sealing Methods 0.000 description 24
- 239000011521 glass Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 239000008188 pellet Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011324 bead Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000276498 Pollachius virens Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49087—Resistor making with envelope or housing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49087—Resistor making with envelope or housing
- Y10T29/49098—Applying terminal
Definitions
- This invention relates to resistors and more particularly to resistors made from oxidic materials, the resistance of which is dependent upon the oxygen content.
- Resistors may be made from oxidic semiconductors such as the oxides of various metals.
- resistors the resistance of which varies greatly with changes in temperature and which have been designated as thermistors may be made from the oxides of manganese, nickel, cobalt, copper, iron, or zinc, or of various selected combinations of these oxides.
- the resistance value of such resistors is dependent, among other things, upon the metal content and upon the oxygen content.
- the oxides of manganese and nickel may be mixed together to make a resistor having a resistance that is less than that of manganese oxide or nickel oxide used alone.
- the resistance of such a resistor can further be varied by changing its oxygen content.
- the oxygen of oxidic semiconductors tends to come to equilibrium with that of the ambient atmosphere.
- the change in oxygen content is relatively slow at low temperatures and becomes more rapid as the temperature is increased.
- the res stance of such a resistor may change as a function of the condition of its use or storage.
- An object of this invention is to substantially fix the oxygen content of oxidic semiconductors at the time of manufacture so that there will be no later change of resistance due to variation of oxygen content.
- One feature of this invention lies in heat ng the resistor element to a temperature h gher than any temperature to which it willsubsequently be exposed and al'owing its resistance to stabilize at this high temperature.
- Another feature of th s invention res des in sealing the resistor element against furth r contact with the outside atmosphere after fixing the oxygen content at a desired value.
- a further feature of this invention lies in selecting an insulating covering material having a given sealing temperature. selecting an oxidic resistance material that will have the required resistance for the size of resistance body empoyed when allowed to come to oxygen equilibrium with its surrounding atmosphere at said sealing temperature, then heat treating the resistor at said sealing temperature until it has attained oxygen equilibrium, and sealing the resistor within the insulating covering at that temperature.
- Fig. 1 shows in section a resistor device made in accordance with this invention.
- Fig. 2 shows also in section another resistor dievice also made in accordance with this invent on.
- the device shown in Fig. 1 comprises a pellet or cylinder ID of oxidic resistance material having metallic coatings ll adhering to opposite ends thereof.
- the coatings have been shown exaggerated as to thickness in the interest of clarity 01' illustration.
- Fine wire leads l2 may be secured to the coatings H in any suitable manner such as fusing into the coatings.
- the leads l2 may be secured to exterior conductors 13 by wrapping them around said conductors and spot-welding at suitable points.
- the assembly including the inner ends of the conductors l3 may be sealed into a glass body or mass of lass l4.
- Other suitable insulating materias may be employed for forming-the body H.
- the method of fixing the oxygen content and thus the resistance of a resistor device, such as illustrated in Fig. 1, may conveniently be described by outlining the process of making a particular resistor device.
- the approximate resistance characteristics required in a given device may be obtained by employing a mixture of manganese and nickel oxides in wh ch the atomic proportions of manganese and nickel are respectively 92 and 8.
- the pellets such as pellet Ill, may be made by extruding a mixture of parts by weight of the mixed ox des, 10 parts by weight of a temporary binder such as isobutyl methacrylate, and sufficient volatie solvent to allow extrusion of the material through a round die of the order of .05 inch diameter.
- the extruded rod may be dried and then fired at a suitable temperature between 1,000 and 1450 C. For the above-noted material 1300 C. was found to be satisfactory.
- the resistance rod which has been sintered by firing, may then be cut up into small sections and ground to a desired final length, say .05 inch.
- the pellets are then heat treated at 860 C. to fix the resistance. This may be done by placing them in an oven and holding the temperature at 860 for a sufficient time to allow the oxygen of the resistance material to come to equilibrium with that of the ambient atmosphere. A time of about three minutes is sufiicient for this size pellet at a temperature of 860 C. The pellet should be quickly removed to room temperature after the heat treatment,
- Metallic coatings I I may then be applied to the ends of the pellet or cylinder and wires l2, which may be for example of platinum, secured to the metallic layers.
- the leads l2 may then be secured to the conductors i3 as previously indicated.
- a section of glass tubing may then be placed over a pellet,"the length of the tubing being such that the conductors l3 protrude from each end.
- the assembly may then be heated to melt the glass down around the pellet, the leads and the inner ends of the conductors l3.
- the sealing temperature'for the glass used in this particular device was 860 C.
- the 928 manganese-nickel ratio was picked for the oxide mixture, because this material would have the proper value of resistance at a sealing temperature of 860 C.
- the metallic material for formin the layers 1 I also was selected to accommodate this temperature, that is, a filming material that would not be adversely affected by the 860 C. temperature.
- the heat treatment for fixing the resistance was also made at this same temperature, as previously indicated. By previously heat treating the resistance elements at the same temperature as that to be used for sealing, further change, during sealing, of oxygen content and thus of resistance is inhibited.
- the device shown in Fig. 2 comprises a bead or body 20 of semiconductive material having leads 22 embedded therein.
- the leads 22 may be attached to conductors 23 in a similar manner to the attachment of leads l2 to conductors 13 in the device of Fig. 1.
- the bead 20 may be heat treated for fixing the resistance in a manner similar to that employed for the pellet ID.
- This heat treating temperature will be selected to fit the temperature at which the assembly is to be sealed into the envelope 24 which may be, for example, of glass. Since the envelope 24 does not come in direct contact with the resistor body 20, said body will probably not be raised to the sealing temperature of the glass.
- the resistance fixing heat treatment might be done at a temperature lower than the treating temperature for the glass envelope 24 or at this sealing temperature.
- One way of carrying out the process for a device of the type shown in Fig. 2 is to first seal the conductors 23 with the bead and leads attached, into the envelope 24 leaving a small opening in the envelope, then the assembly may be heated in an oxygen containing atmosphere at a temperature above the glass sealing temperature for sufficient time to stabilize the resistance of the bead 20.
- the envelope may then be evacuated or filled with an inert gas and the small opening sealed as at 25.
- Bead re- 7 sistors such as 20 may be provided with a. glass coating such as used on the pellet In of Fig. 1.
- the pellet type of resistor may be sealed in to an envelope such as 24 without first coating it with glass or the like. may be sealed into an envelope. In the latter case the resistance will be fixed before sealing on the glass coating and will not be affected by the elevated temperature of sealing into the envelope.
- the temperature at which the resistor body is heat treated for fixing its resistance must always be as high as or higher than the temperature, which the resistor will attain during any phase of its processing or use subsequent to sintering.
- the various factors of material and of treatment must be so correlated, that after the final treatment, the resistor has the proper resistance and is so conditioned that this resistance will not change with time during storage or use.
- a glass coated pellet or bead As has been previously indicated, the atmosphere in contact with the resistor during stabilization should contain oxygen. It may be atmospheric air or a mixture of oxygen with other gases in suitable proportions.
- a resistor from sintered metallic oxides wherein said resistor is brought to an elevated temperature, as a result of processing steps subsequent to sintering, the step of stabilizing the resistance of said resistor that comprises heating the resistor to said elevated temperature prior to said subsequent steps and maintaining it at this temperature until its oxygen comes to equilibrium with that of the ambient atmosphere, and then sealing a protective covering over the resistor at the same elevated temperature.
- the method of making a resistor device and at the same time stabilizing its resistance comprises selecting an insulating covering material having a given sealing temperature, selecting an oxidic resistance material that will have the required resistance for the size of resistance body employed when allowed to come to oxygen equilibrium with its surrounding atmosphere at said sealing temperature, heat treating the resistor at said sealing temperature until it has attained an oxygen equilibrium with the surrounding atmosphere, and then sealing the resistor within the insulating covering material at the same temperature.
- the method of inhibiting resistance variations of an oxidic resistor due to change in its oxygen content that comprises maintaining the resistor at an elevated temperature in an atmosphere containing oxygen until an oxygen equilibrium between the resistor and the atmosphere is attained, said elevated temperature being a known temperature necessary for sealing an insulating protective covering over the resistor, and then sealing the resistor within said protective covering at the known temperature.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Description
Feb. 22, 1949.
Filed July 3, 19%
H. CHR/S TEA/SEN arm aw AT TOPNFS Patented Feb. 22, 194% METALLIC OXIDE RESISTOR Howard Christensen, Springfield, and Joseph J. Kleimack, Westfield, N. J., assignors to Bell Telephone Laboratories,
Incorporated, New
York, N. Y., a corporation of New York Application July 3, 1944, Serial No. 543,372
4 Claims.
This invention relates to resistors and more particularly to resistors made from oxidic materials, the resistance of which is dependent upon the oxygen content.
Resistors may be made from oxidic semiconductors such as the oxides of various metals. For example, resistors, the resistance of which varies greatly with changes in temperature and which have been designated as thermistors may be made from the oxides of manganese, nickel, cobalt, copper, iron, or zinc, or of various selected combinations of these oxides. The resistance value of such resistors is dependent, among other things, upon the metal content and upon the oxygen content. For example, the oxides of manganese and nickel may be mixed together to make a resistor having a resistance that is less than that of manganese oxide or nickel oxide used alone. The resistance of such a resistor can further be varied by changing its oxygen content. The oxygen of oxidic semiconductors tends to come to equilibrium with that of the ambient atmosphere. The change in oxygen content is relatively slow at low temperatures and becomes more rapid as the temperature is increased. Thus the res stance of such a resistor may change as a function of the condition of its use or storage.
An object of this invention is to substantially fix the oxygen content of oxidic semiconductors at the time of manufacture so that there will be no later change of resistance due to variation of oxygen content.
One feature of this invention lies in heat ng the resistor element to a temperature h gher than any temperature to which it willsubsequently be exposed and al'owing its resistance to stabilize at this high temperature.
Another feature of th s invention res des in sealing the resistor element against furth r contact with the outside atmosphere after fixing the oxygen content at a desired value.
A further feature of this invention lies in selecting an insulating covering material having a given sealing temperature. selecting an oxidic resistance material that will have the required resistance for the size of resistance body empoyed when allowed to come to oxygen equilibrium with its surrounding atmosphere at said sealing temperature, then heat treating the resistor at said sealing temperature until it has attained oxygen equilibrium, and sealing the resistor within the insulating covering at that temperature.
Other and further objects and features of this invention will appear more fully and clearly from the following description of illustrative embodiments thereof taken in connection with the appended drawings, in which:
Fig. 1 shows in section a resistor device made in accordance with this invention; and
Fig. 2 shows also in section another resistor dievice also made in accordance with this invent on.
The device shown in Fig. 1 comprises a pellet or cylinder ID of oxidic resistance material having metallic coatings ll adhering to opposite ends thereof. The coatings have been shown exaggerated as to thickness in the interest of clarity 01' illustration. Fine wire leads l2 may be secured to the coatings H in any suitable manner such as fusing into the coatings. The leads l2 may be secured to exterior conductors 13 by wrapping them around said conductors and spot-welding at suitable points. The assembly including the inner ends of the conductors l3 may be sealed into a glass body or mass of lass l4. Other suitable insulating materias may be employed for forming-the body H. The method of fixing the oxygen content and thus the resistance of a resistor device, such as illustrated in Fig. 1, may conveniently be described by outlining the process of making a particular resistor device.
Suppose, for example, the approximate resistance characteristics required in a given device may be obtained by employing a mixture of manganese and nickel oxides in wh ch the atomic proportions of manganese and nickel are respectively 92 and 8. The pellets, such as pellet Ill, may be made by extruding a mixture of parts by weight of the mixed ox des, 10 parts by weight of a temporary binder such as isobutyl methacrylate, and sufficient volatie solvent to allow extrusion of the material through a round die of the order of .05 inch diameter. The extruded rod may be dried and then fired at a suitable temperature between 1,000 and 1450 C. For the above-noted material 1300 C. was found to be satisfactory. The resistance rod, which has been sintered by firing, may then be cut up into small sections and ground to a desired final length, say .05 inch.
The pellets are then heat treated at 860 C. to fix the resistance. This may be done by placing them in an oven and holding the temperature at 860 for a sufficient time to allow the oxygen of the resistance material to come to equilibrium with that of the ambient atmosphere. A time of about three minutes is sufiicient for this size pellet at a temperature of 860 C. The pellet should be quickly removed to room temperature after the heat treatment,
Metallic coatings I I may then be applied to the ends of the pellet or cylinder and wires l2, which may be for example of platinum, secured to the metallic layers. The leads l2 may then be secured to the conductors i3 as previously indicated.
A section of glass tubing may then be placed over a pellet,"the length of the tubing being such that the conductors l3 protrude from each end. The assembly may then be heated to melt the glass down around the pellet, the leads and the inner ends of the conductors l3. The sealing temperature'for the glass used in this particular device was 860 C. On the basis of this temperature and the size of the pellet, which may be dictated, for example, by thermal mass requirements, the 928 manganese-nickel ratio was picked for the oxide mixture, because this material would have the proper value of resistance at a sealing temperature of 860 C. The metallic material for formin the layers 1 I, also was selected to accommodate this temperature, that is, a filming material that would not be adversely affected by the 860 C. temperature. The heat treatment for fixing the resistance was also made at this same temperature, as previously indicated. By previously heat treating the resistance elements at the same temperature as that to be used for sealing, further change, during sealing, of oxygen content and thus of resistance is inhibited.
The device shown in Fig. 2 comprises a bead or body 20 of semiconductive material having leads 22 embedded therein. The leads 22 may be attached to conductors 23 in a similar manner to the attachment of leads l2 to conductors 13 in the device of Fig. 1.
The bead 20 may be heat treated for fixing the resistance in a manner similar to that employed for the pellet ID. This heat treating temperature will be selected to fit the temperature at which the assembly is to be sealed into the envelope 24 which may be, for example, of glass. Since the envelope 24 does not come in direct contact with the resistor body 20, said body will probably not be raised to the sealing temperature of the glass.
For this reason, the resistance fixing heat treatment might be done at a temperature lower than the treating temperature for the glass envelope 24 or at this sealing temperature.
One way of carrying out the process for a device of the type shown in Fig. 2 is to first seal the conductors 23 with the bead and leads attached, into the envelope 24 leaving a small opening in the envelope, then the assembly may be heated in an oxygen containing atmosphere at a temperature above the glass sealing temperature for sufficient time to stabilize the resistance of the bead 20. The envelope may then be evacuated or filled with an inert gas and the small opening sealed as at 25.
Various modifications of the foregoing exemplary processes may be employed. Bead re- 7 sistors such as 20 may be provided with a. glass coating such as used on the pellet In of Fig. 1. The pellet type of resistor may be sealed in to an envelope such as 24 without first coating it with glass or the like. may be sealed into an envelope. In the latter case the resistance will be fixed before sealing on the glass coating and will not be affected by the elevated temperature of sealing into the envelope.
The temperature at which the resistor body is heat treated for fixing its resistance must always be as high as or higher than the temperature, which the resistor will attain during any phase of its processing or use subsequent to sintering. As indicated in connection with the description of the exemplary embodiments, the various factors of material and of treatment must be so correlated, that after the final treatment, the resistor has the proper resistance and is so conditioned that this resistance will not change with time during storage or use.
A glass coated pellet or bead As has been previously indicated, the atmosphere in contact with the resistor during stabilization should contain oxygen. It may be atmospheric air or a mixture of oxygen with other gases in suitable proportions.
Although this invention has been disclosed by means of exemplary embodiments thereof, it is to be understood that it is not limited thereby but by the scope of the appended claim; only.
What is claimed is:
1. In a method of making a resistor from sintered metallic oxides wherein said resistor is brought to an elevated temperature, as a result of processing steps subsequent to sintering, the step of stabilizing the resistance of said resistor that comprises heating the resistor to said elevated temperature prior to said subsequent steps and maintaining it at this temperature until its oxygen comes to equilibrium with that of the ambient atmosphere, and then sealing a protective covering over the resistor at the same elevated temperature.
2. The method of making a resistor device and at the same time stabilizing its resistance, that comprises selecting an insulating covering material having a given sealing temperature, selecting an oxidic resistance material that will have the required resistance for the size of resistance body employed when allowed to come to oxygen equilibrium with its surrounding atmosphere at said sealing temperature, heat treating the resistor at said sealing temperature until it has attained an oxygen equilibrium with the surrounding atmosphere, and then sealing the resistor within the insulating covering material at the same temperature.
3. The method of inhibiting resistance variations of an oxidic resistor due to change in its oxygen content, that comprises maintaining the resistor at an elevated temperature in an atmosphere containing oxygen until an oxygen equilibrium between the resistor and the atmosphere is attained, said elevated temperature being a known temperature necessary for sealing an insulating protective covering over the resistor, and then sealing the resistor within said protective covering at the known temperature.
4. The method of stabilizing the resistance of an oxidic resistor that is to be protected by a glass covering having a sealing temperature of 860 C., that comprises maintaining said resistor at a temperature of 860 C. in an oxygen containing atmosphere until oxygen equilibrium between the resistor and the ambient atmosphere has been obtained, and then sealing the glass covering around the resistor at the sealing temperature.
HOWARD CHRISTENSEN. JOSEPH J. KLEIMACK.
REFERENCES CITED The following references are of record in the file of this patent:
UNITED STATES PATENTS Number Name Date 4 2,271,975 Hall Feb. 3, 1942 2,280,257 Pearson Apr. 21, 1942 2,282,944 Dearborn et a1. May 12, 1942 2,294,756 Inutsuka et a1 Sept. 1, 1942 2,297,779 Kohler -4- Oct. 6, 1942 2,326,580 Trenkle Aug. 10, 1943
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US543372A US2462162A (en) | 1944-07-03 | 1944-07-03 | Metallic oxide resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US543372A US2462162A (en) | 1944-07-03 | 1944-07-03 | Metallic oxide resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2462162A true US2462162A (en) | 1949-02-22 |
Family
ID=24167728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US543372A Expired - Lifetime US2462162A (en) | 1944-07-03 | 1944-07-03 | Metallic oxide resistor |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US2462162A (en) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2631116A (en) * | 1950-02-01 | 1953-03-10 | Manganese Battery Corp | Electrodes for electrical and electrochemical systems |
| US2636012A (en) * | 1949-12-17 | 1953-04-21 | Bell Telephone Labor Inc | Process for making a thermistor by oxidation of a nickel manganese alloy |
| US2640813A (en) * | 1948-06-26 | 1953-06-02 | Aladdin Ind Inc | Reaction product of a mixed ferrite and lead titanate |
| US2837618A (en) * | 1954-08-06 | 1958-06-03 | Jack Waldman | Semi-conductor alloys |
| US3015633A (en) * | 1957-01-23 | 1962-01-02 | Csf | Manufacture of thermistors |
| US3187558A (en) * | 1961-10-10 | 1965-06-08 | Koncen Raymond Earl | Solid state portable gas leak detector |
| US3214719A (en) * | 1964-03-20 | 1965-10-26 | Westinghouse Electric Corp | Thermistor device |
| US3220097A (en) * | 1959-12-14 | 1965-11-30 | Corning Glass Works | Method of making an encapsulated impedance element |
| US3249988A (en) * | 1962-02-27 | 1966-05-10 | Victory Engineering Corp | Method of covering resistor bead |
| US3305821A (en) * | 1963-10-03 | 1967-02-21 | Corning Glass Works | Glass-sealed electrical resistor |
| US3333222A (en) * | 1964-01-07 | 1967-07-25 | Toa Electronics | Heated type variable resistor |
| US3351882A (en) * | 1964-10-09 | 1967-11-07 | Polyelectric Corp | Plastic resistance elements and methods for making same |
| US3381253A (en) * | 1966-03-04 | 1968-04-30 | Victory Engineering Corp | High speed wide range surface sensor thermistor |
| US3393448A (en) * | 1965-12-22 | 1968-07-23 | Owens Illinois Inc | Method for making thermistors |
| US3442014A (en) * | 1966-03-04 | 1969-05-06 | Carborundum Co | Method of stabilizing resistance in semiconductor manufacture |
| US3507732A (en) * | 1966-07-05 | 1970-04-21 | Hottinger Messtechnik Baldwin | Protection of strain gage transducers |
| FR2178957A1 (en) * | 1972-03-31 | 1973-11-16 | Westinghouse Electric Corp | |
| US3815074A (en) * | 1972-05-02 | 1974-06-04 | Shibaura Electronics Co Ltd | Thermistor for temperature measurement |
| US7075407B1 (en) * | 1999-04-09 | 2006-07-11 | Murata Manufacturing Co., Ltd. | Temperature sensor |
| US10488062B2 (en) | 2016-07-22 | 2019-11-26 | Ademco Inc. | Geofence plus schedule for a building controller |
| US10534331B2 (en) | 2013-12-11 | 2020-01-14 | Ademco Inc. | Building automation system with geo-fencing |
| US10895883B2 (en) | 2016-08-26 | 2021-01-19 | Ademco Inc. | HVAC controller with a temperature sensor mounted on a flex circuit |
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| US2271975A (en) * | 1940-04-04 | 1942-02-03 | Gen Electric | Temperature responsive device |
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| US2282944A (en) * | 1940-05-23 | 1942-05-12 | Bell Telephone Labor Inc | Resistance composition and method of making it |
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| US2326580A (en) * | 1942-03-27 | 1943-08-10 | Bell Telephone Labor Inc | Resistance material |
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| US2294756A (en) * | 1940-02-07 | 1942-09-01 | Gen Electric | Method of manufacturing electrical resistors having negative temperature characteristics |
| US2271975A (en) * | 1940-04-04 | 1942-02-03 | Gen Electric | Temperature responsive device |
| US2282944A (en) * | 1940-05-23 | 1942-05-12 | Bell Telephone Labor Inc | Resistance composition and method of making it |
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Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2640813A (en) * | 1948-06-26 | 1953-06-02 | Aladdin Ind Inc | Reaction product of a mixed ferrite and lead titanate |
| US2636012A (en) * | 1949-12-17 | 1953-04-21 | Bell Telephone Labor Inc | Process for making a thermistor by oxidation of a nickel manganese alloy |
| US2631116A (en) * | 1950-02-01 | 1953-03-10 | Manganese Battery Corp | Electrodes for electrical and electrochemical systems |
| US2837618A (en) * | 1954-08-06 | 1958-06-03 | Jack Waldman | Semi-conductor alloys |
| US3015633A (en) * | 1957-01-23 | 1962-01-02 | Csf | Manufacture of thermistors |
| US3220097A (en) * | 1959-12-14 | 1965-11-30 | Corning Glass Works | Method of making an encapsulated impedance element |
| US3187558A (en) * | 1961-10-10 | 1965-06-08 | Koncen Raymond Earl | Solid state portable gas leak detector |
| US3249988A (en) * | 1962-02-27 | 1966-05-10 | Victory Engineering Corp | Method of covering resistor bead |
| US3305821A (en) * | 1963-10-03 | 1967-02-21 | Corning Glass Works | Glass-sealed electrical resistor |
| US3333222A (en) * | 1964-01-07 | 1967-07-25 | Toa Electronics | Heated type variable resistor |
| US3214719A (en) * | 1964-03-20 | 1965-10-26 | Westinghouse Electric Corp | Thermistor device |
| US3351882A (en) * | 1964-10-09 | 1967-11-07 | Polyelectric Corp | Plastic resistance elements and methods for making same |
| US3393448A (en) * | 1965-12-22 | 1968-07-23 | Owens Illinois Inc | Method for making thermistors |
| US3442014A (en) * | 1966-03-04 | 1969-05-06 | Carborundum Co | Method of stabilizing resistance in semiconductor manufacture |
| US3381253A (en) * | 1966-03-04 | 1968-04-30 | Victory Engineering Corp | High speed wide range surface sensor thermistor |
| US3507732A (en) * | 1966-07-05 | 1970-04-21 | Hottinger Messtechnik Baldwin | Protection of strain gage transducers |
| FR2178957A1 (en) * | 1972-03-31 | 1973-11-16 | Westinghouse Electric Corp | |
| US3815074A (en) * | 1972-05-02 | 1974-06-04 | Shibaura Electronics Co Ltd | Thermistor for temperature measurement |
| US7193498B2 (en) | 1999-04-09 | 2007-03-20 | Murata Manufacturing Co., Ltd. | Method of producing temperature sensor and mounting same to a circuit board |
| US20060208848A1 (en) * | 1999-04-09 | 2006-09-21 | Murata Manufacturing Co., Ltd. | Method of producing temperature sensor and mounting same to a circuit board |
| US7075407B1 (en) * | 1999-04-09 | 2006-07-11 | Murata Manufacturing Co., Ltd. | Temperature sensor |
| US10534331B2 (en) | 2013-12-11 | 2020-01-14 | Ademco Inc. | Building automation system with geo-fencing |
| US10591877B2 (en) | 2013-12-11 | 2020-03-17 | Ademco Inc. | Building automation remote control device with an in-application tour |
| US10649418B2 (en) | 2013-12-11 | 2020-05-12 | Ademco Inc. | Building automation controller with configurable audio/visual cues |
| US10712718B2 (en) | 2013-12-11 | 2020-07-14 | Ademco Inc. | Building automation remote control device with in-application messaging |
| US10768589B2 (en) | 2013-12-11 | 2020-09-08 | Ademco Inc. | Building automation system with geo-fencing |
| US10488062B2 (en) | 2016-07-22 | 2019-11-26 | Ademco Inc. | Geofence plus schedule for a building controller |
| US10895883B2 (en) | 2016-08-26 | 2021-01-19 | Ademco Inc. | HVAC controller with a temperature sensor mounted on a flex circuit |
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