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US20180292122A1 - System for trapping polymer vapors in process oven vacuum systems - Google Patents

System for trapping polymer vapors in process oven vacuum systems Download PDF

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Publication number
US20180292122A1
US20180292122A1 US15/812,753 US201715812753A US2018292122A1 US 20180292122 A1 US20180292122 A1 US 20180292122A1 US 201715812753 A US201715812753 A US 201715812753A US 2018292122 A1 US2018292122 A1 US 2018292122A1
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US
United States
Prior art keywords
trap assembly
assembly
polyimide
trap
vertical elevation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/812,753
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English (en)
Inventor
William Moffat
Craig Walter McCoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yield Engineering Systems Inc
Original Assignee
Yield Engineering Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yield Engineering Systems Inc filed Critical Yield Engineering Systems Inc
Priority to US15/812,753 priority Critical patent/US20180292122A1/en
Publication of US20180292122A1 publication Critical patent/US20180292122A1/en
Priority to US16/189,631 priority patent/US20190314738A1/en
Priority to PCT/US2018/060814 priority patent/WO2019099401A2/fr
Priority to TW107140455A priority patent/TWI854964B/zh
Assigned to YIELD ENGINEERING SYSTEMS, INC. reassignment YIELD ENGINEERING SYSTEMS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MOFFAT, WILLIAM
Assigned to YIELD ENGINEERING SYSTEMS, INC. reassignment YIELD ENGINEERING SYSTEMS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MCCOY, CRAIG WALTER
Abandoned legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D5/00—Condensation of vapours; Recovering volatile solvents by condensation
    • B01D5/0033—Other features
    • B01D5/0045—Vacuum condensation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D21/00—Defrosting; Preventing frosting; Removing condensed or defrost water
    • F25D21/14—Collecting or removing condensed and defrost water; Drip trays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D5/00—Condensation of vapours; Recovering volatile solvents by condensation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by using a condenser
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
    • F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum
    • F04B37/16—Means for nullifying unswept space
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D19/00—Arrangement or mounting of refrigeration units with respect to devices or objects to be refrigerated, e.g. infrared detectors

Definitions

  • This invention relates to vacuum systems, namely a system for trapping condensation in a designated location outside of a process oven.
  • a continuing trend in semiconductor technology is the formation of integrated circuit (IC) chips having more and faster circuits thereon.
  • IC integrated circuit
  • Such ultralarge scale integration has resulted in a continued shrinkage of feature sizes with the result that a large number of devices are made available on a single chip.
  • the interconnect density typically expands above the substrate in a multi-level arrangement and the devices have to be interconnected across these multiple levels.
  • the interconnects must be electrically insulated from each other except where designed to make contact. Usually electrical insulation requires depositing dielectric films onto a surface, for example using a CVD or spinning-on process.
  • the shrinkage in integrated circuit design rules has simultaneously reduced the wiring pitch. These have made the signal propagation delay in the interconnects an appreciable fraction of the total cycle time.
  • low-k dielectric constant
  • IC integrated circuit
  • Polyimide is a polymer material often used in the production of semiconductor substrates such as silicon wafers.
  • Polyimide is a desirable insulating material for semiconductor wafers because of its outstanding physical properties.
  • polyimide typically requires a long time to cure when conventional heating techniques are used. A cure cycle of several hours is typical and this often becomes the pacing step in semiconductor fabrication.
  • a polyimide precursor may be applied to a substrate, and then dried to prepare for imidization of the polymer.
  • a goal of the drying process is to remove the solvent from the polymer (which may be N-Methyl-2-pyrrolidone, NMP, for example), and it can also be important to remove oxygen during the drying process.
  • further goals of the drying process are to minimize or eliminate any bubbles/voids in the polymer layer, to minimize discoloration to the layer that may be induced by heating, and to fully remove residual solvent from the precursor mix. Each of these items sought to be eliminated may interfere with subsequent process steps, or enhance the probability of failure of a device containing the polyimide layer.
  • Process ovens may be used to vacuum bake semiconductor substrates in support of various processes.
  • a polyimide bake oven may be used for temperature imidization of polyimide layers, for example.
  • Polymer vapors may be released during such processes, and these vapors would typically route through vacuum lines as part of their exit from the process chamber.
  • a polyimide is temperature imidized at 400-450 C.
  • a typical solvent for the process may be NMP. During the temperature imidization the vaporized solvents may carry vaporized polymer downstream, resulting in coating of the vacuum lines.
  • the process may involve BCB and the temperature may be in the range of 350-400 C.
  • the process may involve PBO and the temperature may be in the range of 200-250 C.
  • the vacuum lines run the risk of having vaporized liquids condensing along their interiors, resulting in coatings within these lines. This may result in the need to replace these lines periodically, which may present quite a maintenance burden upon operators of such process ovens.
  • Some process ovens incorporate filters into the vacuum systems, which are adapted to screen out the droplets in the vapor. This approach may still result in significant condensation within vacuum lines in the system.
  • What is called for is a system which minimizes condensation in process ovens, and their fixed vacuum lines, and which collects condensed vapors in such a manner that allows for easy maintenance.
  • FIGS. 1A and 1B are drawings of a process oven which may used in conjunction with embodiments of the present invention.
  • FIG. 2 illustrates a trap assembly according to some embodiments of the present invention.
  • FIG. 3 is a drawing of a trap assembly according to some embodiments of the present invention.
  • FIG. 4 is a cutaway view of a trap assembly according to some embodiments of the present invention.
  • FIG. 5 is an illustration of a cutaway view of a trap assembly according to some embodiments of the present invention.
  • FIG. 6 is a colored view of a trap assembly on a bake oven according to some embodiments of the present invention.
  • FIG. 7 is a colored view of a trap assembly on a bake oven according to some embodiments of the present invention.
  • FIG. 8 is a colored cross-sectional view of a trap assembly on a bake oven according to some embodiments of the present invention.
  • a trap system adapted to trap polyimide or other vapors exiting from a process chamber.
  • the vapors are routed from the process chamber through a heated exit line at low pressure and then cooled, resulting in condensation at a selected location.
  • the condensed vapors accumulate in a liquid trap.
  • a polyimide bake oven 120 is coupled to a polyimide trap assembly 121 and is used to cure polyimide layers.
  • the use of the polyimide bake oven 120 may involve heating of the oven in support of temperature imidization of a polymer layer while under vacuum, for example. These processes may also include drying of a polyimide precursor layer prior to the temperature imidization.
  • the baking of the substrate with the polymer layer may release solvents during the heating/baking of the layer.
  • the solvents may carry along with them some vaporized polymer, which presents the risk that the vaporized polymer may condense in places not desired.
  • the vaporized polymer may condense in vacuum lines.
  • the condensation within vacuum lines may decrease their functional capabilities as the cross-sectional flow area of the lines decrease with the polymer buildup along the interior walls of the lines.
  • the polyimide bake oven 120 may include a main chamber 125 and a feeder assembly 126 .
  • the feeder assembly 126 may allow for the insertion into the polyimide bake oven 120 of stacks of horizontally laid wafers.
  • the polyimide trap assembly 121 may include a trap assembly inlet 133 that is coupled to a vacuum exit line 132 from the main chamber 125 .
  • the vacuum exit line 132 may be heated with a heater 130 in order to minimize condensation within the line.
  • a thermocouple 131 may be present on the vacuum exit line 132 . With a heated process oven, and then a heated vacuum exit line 132 , the amount of condensation within the process oven and the heated vacuum exit line 132 may be kept to a minimum.
  • the vacuum exit line 132 may have a cross-sectional flow area of a first amount.
  • the polyimide trap assembly 121 is adapted to cause condensation of the polymer vapor flowing in the vacuum line in a specific location, so that the condensation does not occur in other portions of the system. Without such a system, it is expected that the exhaust piping will be impacted the further it is from the main chamber. As the exhausted vapor leaves the main chamber, it may remain as vapor at the exit temperature. Farther along a globular polyimide will form in the piping, and then farther along a coating will form. This will interfere with exhaust flow. With enough time the piping will become sufficiently, or completely, blocked which then requires removal and replacement of components. With the polyimide trap assembly the condensation may be so complete at the trap that no further downstream condensate forms, sparing the operator from costly and time consuming maintenance.
  • the trap inlet 133 routes the chamber exhaust into a condensing body 122 .
  • the condensing body 122 may be of aluminum and have fins 137 which allow for heat transfer from the hot chamber exhaust to the outside environment.
  • a trap cooling blower 123 is coupled to the condensing body 122 .
  • Auxiliary fans 124 may further provide air to recirculate the area around the condensing body.
  • the exhaust travels out of the condensing body 122 through the trap outlet 136 .
  • the condensed liquid flows downward into the vial 134 .
  • the vial 134 may be clear and may be of glass.
  • a clamp assembly 135 may include a clamp and an 0 -ring seal.
  • the amount of liquid in the vial 134 may be observed by the operator.
  • the operator may remove and replace the vial with a new or emptied vial.
  • condensation of the polyimide now restricted to a chosen location and the condensed polyimide routed to the vial 134
  • replacement of the vial 134 is the only process step needed to remove condensed polyimide.
  • other portions of the polyimide bake oven 120 and its exhaust and vacuum system are protected from condensation of polyimide, which previously required time consuming maintenance for its removal.
  • the vacuum trap system is thus geared to control the location where condensation of polymer vapors is likely to occur.
  • FIGS. 5 and 8 are cross-sectional views of a trap assembly according to some embodiments of the present invention.
  • FIGS. 6 and 7 are illustrations of a bake oven with a trap assembly according to some embodiments of the present invention.
  • a drying process is carried out in a process chamber with low pressure/vacuum capabilities.
  • the process chamber may also include capability for inletting heated inert gas, such as nitrogen.
  • the process chamber may also be able to be heated for supporting the drying process.
  • the process chamber may also be able to be heated to even higher temperatures to support temperature imidization processing after the drying portion of the process.
  • the process chamber is coupled to a polyimide trap assembly as discussed aboe.
  • the solvent With reduced pressure, the solvent will boil at a lower temperature. For example, NMP boils at approximately 105 C at 50 Torr.
  • the substrates are delivered into a process chamber.
  • the process chamber may be heated to a temperature below the room temperature boiling point of the solvent.
  • the solvent may be NMP and the initial heating temperature may be 150 C.
  • the pressure used is subject to at least two conflicting constraints. On the one hand, the pressure should be reduced enough to evaporate the solvent, allowing for the low pressure liberation of the gas which permeates the liquid/gel precursor and is liberated to the low pressure chamber.
  • a polyimide precursor is applied to a silicon substrate.
  • the polyimide precursor is applied directly over the silicon substrate.
  • the polyimide precursor is applied over other layers already on a substrate, which may be other polyimide layers and metal layers, for example.
  • the solvent used in the polyimide precursor is NMP.
  • An expected thickness for semiconductor applications is in the range of 7-10 microns.
  • a process oven may be used to support a plurality of substrates within a chamber .
  • the process oven may include internal heaters, heated inert gas inputs, and vacuum capability.
  • the substrates are placed into the chamber that has been heated to 150 C.
  • the chamber is heated to a temperature in the range of 135 C to 180 C.
  • the chamber pressure is reduced to a first drying pressure of 50 Torr.
  • the first drying pressure is in the range of 30-60 Torr.
  • the chamber may then be flushed with a heated inert gas such as nitrogen at a pressure of 600 Torr.
  • the heated inert gas may be at a pressure in the range of 550 to 760 Torr.
  • the nitrogen may be heated to the same temperature as the chamber, 150 C.
  • the chamber pressure is then reduced to a second drying pressure of 25 Torr.
  • the second drying pressure is in the range of 15-30 Torr.
  • the chamber may then be flushed with a heated inert gas such as nitrogen at a pressure of 600 Torr.
  • the heated inert gas may be at a pressure in the range of 550 to 760 Torr.
  • the nitrogen may be heated to the same temperature as the chamber, 150 C.
  • the chamber pressure is then reduced to a third drying temperature of 1 Torr. In some embodiments, the third drying pressure is in the range of 1-15 Torr.
  • the chamber may then be filled with heated inert gas, such as nitrogen, up to 650 Torr, in preparation for imidization of the polyimide precursor.
  • heated inert gas such as nitrogen, up to 650 Torr
  • the substrates may then undergo temperature imidization in the same chamber.
  • the subsequent temperature imidization may occur at 350-375 C, and as further described below.
  • Each of these process steps may liberate process affluent laden with polyimide vapor, which may clog the vacuum exhaust system downstream from the process chamber.
  • a process may begin with the heating of the process oven to a temperature of 150 C.
  • a single substrate or a plurality of substrates within the process oven which include a polyimide precursor including a solvent such as MP, are put into the process oven which has been preheated to the temperature of 150 C.
  • the process oven pressure is then reduced to a first drying pressure of 50 Torr. This portion of the process may take 2-3 minutes.
  • the process oven is then flushed with preheated nitrogen heated to 150 C up to a pressure of 600 Torr. This portion of the process may take 2-3 minutes.
  • the process oven pressure is then reduced to a second drying pressure of 25 Torr. This portion of the process may take 3-4 minutes.
  • the process oven is then flushed with preheated nitrogen heated to 150 C up to a pressure of 600 Torr. This portion of the process may take 2-3 minutes.
  • the process oven pressure is then reduced to a third drying pressure of 1 Torr. This portion of the process may take 4-5 minutes.
  • the process oven is then flushed with preheated nitrogen heated to 150 C up to a pressure of 650 Torr. This portion of the process may take 2-3 minutes.
  • the aforementioned steps have now greatly reduced the oxygen level in the process oven, as well as having removed all or nearly all of the solvent from the polyimide precursor with little or no bubbling or skinning of the polyimide precursor.
  • the substrates are now ready for temperature imidization.
  • the oxygen level in the process oven may now be down as low as approximately 1 ppm, as an end result of the drying process.
  • An exemplary temperature imidization process may now include maintaining approximately 250 Torr in the process chamber while inputting heated nitrogen at the top of the process oven while pulling vacuum at the bottom of the process oven.
  • the heated nitrogen and the oven temperatures may now be raised in unison, for example, to 350 C. At 4 C/minute, this heating process would take 50 minutes.
  • 350 C the oven and gas temperatures may be held for 1 hour for temperature imidization of the polyimide precursor.
  • 350 C is an illustrative temperature using NMP, other temperatures may be used for the temperature imidization.
  • affluent laden with polyimide vapor may be liberated from the polyimide layers on the substrates.
  • the process step of maintaining a pressure, such as 250 Torr, while curing the polyimide may result in a continuous flow of process affluent through the vacuum outlet.
  • the vacuum outlet system and its piping were subject to clogging by the condensation of the polyimide in the system and piping.
  • the use of the polyimide trap assembly as described above allows for the location of the polyimide condensation to be determined, and for the trapping of the polyimide condensation in a reservoir which his easily removable and replaceable.
  • the oven heaters may be turned off, which will result in a cooling of the oven.
  • the heated nitrogen flow may be cooled at a rate which tracks the cooling oven.
  • the length of the vacuum exit line may be varied such that the flow through the line is cooled enough to allow for complete or near complete condensation in the condensation chamber.
  • the length of the vacuum exit line may be selected such that the vacuum exit line is not subject to clogging condensation.
  • the length of the vacuum exit line may be varied depending upon the temperature used in the oven, the polyimide type used in the oven during processing, and other factors. In one example, the temperature of the vacuum exit line at the entrance to the condensation body was approximately 65 C, the cooled condensation body temperature was approximately 30 C, and the condensation body exit line was approximately 44 C.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Drying Of Solid Materials (AREA)
US15/812,753 2016-11-14 2017-11-14 System for trapping polymer vapors in process oven vacuum systems Abandoned US20180292122A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/812,753 US20180292122A1 (en) 2016-11-14 2017-11-14 System for trapping polymer vapors in process oven vacuum systems
US16/189,631 US20190314738A1 (en) 2016-11-14 2018-11-13 Trap assembly and system for trapping polymer vapors in process oven vacuum systems
PCT/US2018/060814 WO2019099401A2 (fr) 2016-11-14 2018-11-13 Ensemble piège et système pour le piégeage de vapeurs de polymère dans des systèmes de vide de four de traitement
TW107140455A TWI854964B (zh) 2016-11-14 2018-11-14 處理爐真空系統中捕集聚合物蒸氣的捕集器組件和系統

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662421671P 2016-11-14 2016-11-14
US15/812,753 US20180292122A1 (en) 2016-11-14 2017-11-14 System for trapping polymer vapors in process oven vacuum systems

Related Child Applications (1)

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US16/189,631 Continuation-In-Part US20190314738A1 (en) 2016-11-14 2018-11-13 Trap assembly and system for trapping polymer vapors in process oven vacuum systems

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US20180292122A1 true US20180292122A1 (en) 2018-10-11

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US15/812,753 Abandoned US20180292122A1 (en) 2016-11-14 2017-11-14 System for trapping polymer vapors in process oven vacuum systems

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US (1) US20180292122A1 (fr)
TW (1) TWI854964B (fr)
WO (2) WO2018090048A1 (fr)

Cited By (1)

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WO2024011677A1 (fr) * 2022-07-14 2024-01-18 长鑫存储技术有限公司 Dispositif de traitement de semi-conducteur, mécanisme de traitement de gaz résiduaire et procédé

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US11444053B2 (en) 2020-02-25 2022-09-13 Yield Engineering Systems, Inc. Batch processing oven and method
US11688621B2 (en) 2020-12-10 2023-06-27 Yield Engineering Systems, Inc. Batch processing oven and operating methods
US12374569B2 (en) 2021-10-20 2025-07-29 Yield Engineering Systems, Inc. Batch processing oven for magnetic anneal
CN117488274B (zh) * 2023-12-28 2024-03-26 杭州嘉悦智能设备有限公司 冷凝收集结构及氧化亚硅生产设备

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TWI854964B (zh) 2024-09-11
TW201924761A (zh) 2019-07-01
WO2019099401A2 (fr) 2019-05-23
WO2018090048A1 (fr) 2018-05-17
WO2019099401A3 (fr) 2019-10-17

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