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US20060226442A1 - GaN-based high electron mobility transistor and method for making the same - Google Patents

GaN-based high electron mobility transistor and method for making the same Download PDF

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Publication number
US20060226442A1
US20060226442A1 US11/100,672 US10067205A US2006226442A1 US 20060226442 A1 US20060226442 A1 US 20060226442A1 US 10067205 A US10067205 A US 10067205A US 2006226442 A1 US2006226442 A1 US 2006226442A1
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Prior art keywords
heterostructure
system based
material system
transistor
layer
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An-Ping Zhang
James Kretchmer
Edmund Kaminsky
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Lockheed Martin Corp
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Priority to US11/100,672 priority Critical patent/US20060226442A1/en
Assigned to GENERAL ELECTRIC COMPANY reassignment GENERAL ELECTRIC COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAMINSKY, EDMUND BENJAMIN, JR., ZHANG, AN-PING, KRETCHMER, JAMES WILLIAM
Assigned to LOCKHEED MARTIN CORPORATION reassignment LOCKHEED MARTIN CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GENERAL ELECTRIC COMPANY
Priority to PCT/US2006/012955 priority patent/WO2006110511A2/fr
Priority to EP06740683A priority patent/EP1872408A4/fr
Publication of US20060226442A1 publication Critical patent/US20060226442A1/en
Priority to US11/980,270 priority patent/US7851284B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Definitions

  • the present invention relates generally to transistors, and more particularly, to GaN based High Electron Mobility Transistors (HEMTs) and methods for making such transistors.
  • HEMTs High Electron Mobility Transistors
  • High Electron Mobility Transistors are known to be desirable in certain applications.
  • One such application is microwave amplifiers. They are known to generally yield higher output power densities, lower noise figures, and be able to operate at higher frequencies as compared to other Field Effect Transistors (FETs).
  • FETs Field Effect Transistors
  • GaN material system based HEMT's are believed to be desirable for use in Radio Frequency (RF) modulation schemes and interfaces.
  • drain current reduction at high frequencies has conventionally limited the available output power in GaN material system-based HEMT devices, which is believed to be caused by the surface states. It is believed desirable to passivate the surface states and prevent surface damage during device processing.
  • Low breakdown voltage has conventionally limited high drain biases for GaN material system based HEMT devices. It is believed desirable to increase the breakdown voltage.
  • the power performance of conventional GaN material system based HEMT devices typically degrades at high junction temperatures, due to reduced carrier saturation velocity and increased parasitic resistance. It is believed to be desirable to maintain a high two dimensional electron gas (2DEG) mobility even at high temperatures.
  • Repeatable low contact resistance in conventional GaN material system based HEMT devices has also proven problematic for high frequency operation. It is believed desirable to provide for repeatable and low contact resistances. It is also believed to be desirable to increase the 2DEG sheet charge and maintain 2DEG confinement to increase usable RF power and eliminate drain current reduction at high frequencies.
  • a high electron mobility transistor including: a GaN material system based heterostructure; barrier surface protection during MESA processing; a front end passivating dielectric layer over the heterostructure and defining a plurality of low damage etch processed openings for electrical ohmic contacts for source and drain electrodes and for Schottky contacts for gate electrodes on the heterostructure through the openings; ohmic contact opening surface treatments and source/drain ion implantation to reduce contact and source/drain resistance; and a double heterostructure for improved carrier confinement.
  • a method for making a high electron mobility transistor includes low pressure chemical vapor depositing a passivating nitride layer over a GaN material system based heterostructure; etching openings in the nitride layer; and forming electrodes through the openings.
  • FIG. 1 illustrates a diagrammatic view of a HEMT
  • FIG. 2 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention
  • FIG. 3 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention
  • FIG. 4 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention
  • FIG. 5 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention
  • FIG. 6 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention
  • FIG. 7 illustrates performance characteristics according to an aspect of the present invention
  • FIG. 8 illustrates a diagrammatic view of a HEMT according to an aspect of the present invention
  • FIGS. 9A-9D illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention
  • FIGS. 10A-10C illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention
  • FIGS. 11A-11E illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention.
  • FIGS. 12A-12D illustrate diagrammatic views of an AlGaN/GaN heterostructure during different processing steps according to an aspect of the present invention.
  • Device 10 generally includes a substrate 20 , an optional nucleation layer 30 , buffer layer 40 , barrier layer 50 , 2DEG region 60 , and passivation layer 70 .
  • Device 10 also includes a T-gate 80 , source 90 and drain 100 .
  • T-gate 80 may be laterally off-set towards source 90 .
  • the lateral separation between T-gate 80 and source 90 may be on the order of about 0.5-2 ⁇ m (micrometer), preferably about 1 ⁇ m, while the lateral separation between T-gate 80 and drain 100 may be on the order of about 1-5 ⁇ m, and preferably about 2 ⁇ m.
  • Substrate 20 may take the form of a semi-insulating monocrystalline silicon carbide (SiC) substrate.
  • SiC substrate 20 may be of a 4H or 6H polytype, for example.
  • Substrate 20 may also take the form of a semi-insulating monocrystalline bulk GaN substrate, or may take the form of a sapphire substrate, or a semi-insulating monocrystalline AlN substrate, all by way of non-limiting example.
  • Nucleation layer 30 may take the form of an AlN, or a GaN, or an AlGaN layer; preferably a low-temperature AlN, nucleation layer where a 4H or 6H-SiC or sapphire substrate 20 is used. Nucleation layer 30 may optionally be omitted where substrate 20 takes the form of a bulk GaN or AlN substrate, for example.
  • Buffer layer 40 may take the form of a resistive GaN layer.
  • Barrier layer 50 may take the form of an AlGaN layer.
  • AlGaN barrier layer 50 may be Si doped or undoped, and preferably is undoped.
  • Channel 60 represents a 2-dimensional electron gas (2DEG) channel formed by the heterojunction between buffer layer 40 and barrier layer 50 .
  • the heterostructure may take the form of an AlGaN/GaN, or AlN/GaN heterostructure.
  • a 2-Dimensional Electron Gas (2DEG) forms at the interface between buffer layer 40 and barrier layer 50 , i.e., channel 60 , as a result of well known strong spontaneous polarization and piezoelectric polarization effects in GaN-based material systems.
  • the resulting high density, high mobility AlGaN/GaN 2DEG may be used to provide HEMT functionality when modulated by gate electrode 80 .
  • Passivation layer 70 may take a conventional form where low temperature (400 deg. C.) plasma enhanced chemical vapor deposition (PECVD) passivation material is deposited after high temperature ohmic contact annealing and overlay and gate metallization processing have been completed.
  • PECVD plasma enhanced chemical vapor deposition
  • passivation layer 70 may take the form of a surface film including SiN x , AlN, Sc 2 O 3 , MgO or SiO 2 .
  • Ohmic contacts/overlay metallization processing may be used to form source and drain electrodes 90 , 100 .
  • Schottky metallization may be used to form T-gate electrode 80 .
  • FIG. 2 there is shown a diagrammatic view of a “front end” field plate-type surface passivated High Electron Mobility Transistor (HEMT) device 200 according to an aspect of the present invention.
  • Field plate-type passivation layer 210 provides for better surface coverage in regions 110 than does conventional passivation layer 70 because it is deposited early in the processing. This allows for stabilization of surface states in region 110 .
  • the extended passivation layer 210 under T-gate 80 may also provide for increased breakdown voltage as compared to passivation layer 70 , by spreading the crowded electric field and modulating the surface states on the drain 100 side around T-gate 80 .
  • a passivation layer such as passivation layer 210
  • a passivation layer may be deposited relatively early during device processing. Passivation may occur prior to ohmic source or drain terminal contact, and gate formation.
  • a passivation layer such as passivation layer 210
  • LPCVD low pressure chemical vapor deposition
  • a heterostructure including layers 20 - 50 may be obtained via conventional commercial sources.
  • the heterostructure, or wafer may be cleaned, such as by using acetone, methanol and isopropanol dips. The wafer may then be rinsed and spin dried. Further cleaning, including a buffered oxide etch (BOE) and/or HF bath may also be used. The cleaned wafer may again be rinsed and dried.
  • BOE buffered oxide etch
  • the cleaned wafer may then be subjected to a LPCVD process using NH 3 and SiH 2 Cl 2 gases flowed at about 70 and 30 standard cubic centimeters per second (sccm) at about 765 degrees Celsius (deg. C.) and 370-460 millitorr (mT) to deposit SiNx.
  • Processing time may be appropriate for depositing a dense nitride passivation layer having a thickness of between about 450 and 2000 angstroms, for example.
  • Passivation layer 210 may be suitable for use with a wide-variety of GaN material system based HEMTs.
  • HEMT 300 includes a doped channel 310 .
  • Channel 310 may include doped GaN or InGaN, by way of non-limiting example.
  • Channel 310 may be between about 50 angstroms and 200 angstroms thick, and preferably about 100 angstroms, where barrier layer 50 is around 100 angstroms to 500 angstroms thick, and preferably about 200-300 angstroms thick.
  • HEMT 300 may exhibit improved performance at high temperatures.
  • Channel 310 may be n-type Si doped on the order of about 1016 to 1018 cm ⁇ 3 .
  • Channel 310 may be substantially uniformly doped. Layer 310 may be grown upon buffer layer 40 .
  • HEMT 300 performance may be relatively temperature independent, as compared with HEMT 10 or 200 . This may result from the scattering mechanism being dominated in the doped channel 310 by impurity scattering, which is relatively temperature independent.
  • FIG. 4 there is shown a diagrammatic view of an HEMT 400 with implanted source and drain regions 410 S, 410 D, respectively, according to an aspect of the present invention.
  • Source/drain implantation may serve to greatly increase conductivity under the source and drain metal electrodes, thus facilitating low contact resistances.
  • Implanted regions 410 S, 410 D may be combined with a doped channel, such as channel 310 of FIG. 3 .
  • Implanted regions 410 S, 410 D may also be particularly well suited for use with a relatively thin, undoped AlN sub-barrier layer—which may otherwise hinder providing good, low resistance ohmic contacts. Aspects of forming implanted source and drain regions are detailed with respect to FIGS. 11A-11E .
  • FIG. 5 there is shown a diagrammatic view of an HEMT 500 incorporating an AlN sub-barrier layer 510 according to an aspect of the present invention.
  • Layer 510 may be relatively thin, on the order of about 10-20 angstroms, and be composed of undoped AlN. Layer 510 may serve to enhance the charge in the 2DEG channel 60 and reduce the noise figure in HEMT 500 .
  • layer 510 may be incorporated with a doped channel, such as channel 310 of FIG. 3 , and/or implanted source and drain regions, such as regions 410 S and 410 D of FIG. 4 .
  • HEMT 600 includes a channel layer 610 .
  • Channel 610 may take the form of un-doped GaN or InGaN, by way of non-limiting example only.
  • HEMT 600 takes the form of an AlGaN/(ln)GaN/AlGaN double heterostructure HEMT to provide a better carrier confinement in the channel 610 .
  • Channel 610 may be around 50 angstroms to 200 angstroms thick, preferably about 100 angstroms, where layer 50 is around 100 angstroms to 500 angstroms thick and preferably about 200-300 angstroms thick.
  • Layer 620 may be undoped, or doped with Fe or other elements to provide semi-insulating properties.
  • Layer 620 may be about 50 angstroms to 5000 angstroms thick, preferably about 100-500 angstroms.
  • a double heterostructure HEMT such as HEMT 600 of FIG. 6
  • a single heterostructure HEMT may exhibit a higher channel mobility compared to other HEMT structures.
  • a double heterostructure HEMT may exhibit a lower 2DEG sheet density as compared to other HEMT structures.
  • an HEMT device such as any of devices 10 , 200 , 300 , 400 , 500 and 600 may be formed into devices including sloped mesas.
  • the shaping of HEMT devices to include a sloped mesa may better isolate such devices, improve device manufacturing yields, and improve long-term device reliability, for example.
  • FIG. 8 there is shown a device 800 according to an aspect of the present invention.
  • the structure of illustrated device 800 largely corresponds to a mesa structure of device 400 for non-limiting purposes of illustration only.
  • Device 800 includes a sloped mesa.
  • Gate 80 , drain 90 and source 100 are positioned on the mesa plateau portion 810 of layer 50 .
  • the mesa etch may terminate in the GaN Buffer layer 40 , and have a MESA etch depth of about 2000 angstroms compared to a barrier layer 50 thickness of about 200 angstroms.
  • GaN material system heterostructures may be formed into mesa-formed HEMT devices with the assistance of one or more protecting layers to minimize the potential of surface damage to the sensitive barrier layer.
  • a GaN material system heterostructure suitable for use may take the form of a wafer having a layer structure consistent with any one of structures 200 - 600 , absent passivation layers, gates, sources and drains, for example.
  • FIGS. 9A-9D there are shown structures 900 A- 900 D at various processing steps according to an aspect of the present invention.
  • a GaN material system heterostructure wafer hereinafter referred to simply as a wafer, may be cleaned using acetone, methanol and isopropyl alcohol dips, and subsequent rinsing and spin drying, for example.
  • a dielectric film may be used to mitigate photo resist removal damage that may otherwise occur during mesa formation.
  • FIG. 9A there is shown a structure 900 A.
  • Illustrated structure 900 A includes an AlGaN/GaN heterostructure 910 . Such a structure is analogous to that shown in FIGS.
  • Dielectric film 920 may be low temperature chemical vapor deposited oxide (PECVD or Low temperature CVD deposited) over structure 910 .
  • Film 920 may take the form of a thin layer (about 1000 angstroms or less) of silicon dioxide (Si0 2 ), for example.
  • Oxide film 920 may be formed by flowing SiH 4 and O 2 at rates of about 43 sccm and 90 sccm, respectively, at a pressure of about 260 mT and a temperature of about 440 deg. C. Film 920 may serve as a protection layer for the AlGaN barrier surface during mesa etching and subsequent etch mask removal. Temperatures may rise significantly during mesa etching resulting in hardening of the resist masking layer 930 ( FIG. 9B ). This may render the photo resist on the structure difficult to remove. Layer 920 protects the barrier layer surface during resist removal, and thus facilitates plasma ashing to remove photoresist from structure 910 . Direct exposure of the AlGaN barrier to plasma ashing has been shown to damage the barrier layer and reduce or remove the 2DEG in the channel.
  • Structure 900 B additionally includes a patterned photoresist layer 930 .
  • Layer 930 may be composed of a commercially available photoresist, such as AZ4400 available from Shipley, for example.
  • Layer 930 may be patterned in the form of a mesa mask using conventional methodologies, such as spin coating, exposing, developing and reflowing, for example.
  • the patterned mask layer 930 may be suitable for facilitating shaping of layer 920 and structure 910 into a mesa structure 900 C.
  • a reactive ion etch RIE
  • a GaN layer within structure 910 may serve as an etch stop for a NF 3 /Ar etch flowed at about 12/28 sccm, respectively, at about 100 mT and 400 watts (W) using a carbon plate.
  • a diluted oxide etch such as an etch using a diluted HF etchant, may then be used to clean the GaN surface exposed by the reactive ion etch.
  • a high density, Inductively Coupled Plasma (ICP) etch may be used to form the GaN layer into the desired mesa shape.
  • BCl 3 and Cl 2 gases may be flowed at rates of 10 sccm and 30 sccm during ignition and 15 sccm and 30 sccm during etching, respectively.
  • RF power used may be around 50 W and 300 W during ignition and 15 W (using a 90 v bias) and 300 W during etching.
  • the etching may be carried out at around 5 mT and about 10 deg. C. Etch depth can range from 1000-3000 Angstroms, for example.
  • patterned layer 930 and the remaining portions of layer 920 may then be selectively removed to provide mesa shaped structure 900 D.
  • an O 2 ashing or descum process may be carried out to remove densified resist. Processing may include an acetone bath and propanol rinse. Another ashing or descum process may then be effected, to better ensure all resist has been removed. Dielectric layer 920 remains over the barrier layer for protection during this removal step. A wet oxide etch may then be used to remove the remaining layer 920 . A dilute HF etchant (such as on the order of about 1:20) may be used at room temperature.
  • the mesa shaped wafer may then again be cleaned, such as by using a photo resist stripping bath, for example.
  • the use of layer 920 may serve to protect the relatively fragile channel area of structure 910 during the aforementioned processing over which the gate, and source and drain electrodes will be formed.
  • Structure 900 D may be provided with a T-gate 80 , source 90 , drain 100 and passivation layer 210 to provide a device analogous to device 800 of FIG. 8 , for example—absent doped regions.
  • ohmic contact openings for the source and drain regions may be plasma treated prior to ohmic contact metallization.
  • An HEMT structure to be plasma treated in accordance with the present invention may take the form of one of structures 100 - 600 of FIGS. 1-6 , or 800 of FIG. 8 .
  • Plasma treating AlGaN/GaN heterostructure ohmic contact openings immediately prior to ohmic contact metallization may lower the ohmic contact resistance by creating a near-surface conducting layer with N-vacancies. It may also serve to clean the structure prior to contact metallization.
  • Illustrated structure 1000 A includes an AlGaN/GaN heterostructure 1010 , such as a structure analogous to structure 900 D shown in FIG. 9D (only the mesa plateau is shown). Illustrated structure 1000 A also includes a surface passivating layer 1020 . Layer 1020 may take the form of a SiNx layer that has been formed over heterostructure 1010 using high temperature, densified LPCVD, as in one of structures 100 - 600 of FIGS. 1-6 , or 800 of FIG. 8 . Layer 1020 may also be formed using plasma enhanced chemical vapor deposition (PECVD), or evaporation, for example.
  • PECVD plasma enhanced chemical vapor deposition
  • Layer 1020 may take the form of an AlN film formed on structure 1010 using molecular beam expitaxy (MBE) or sputtering, Sc 2 O 3 , MgO using MBE, or SiO 2 using LPCVD or PECVD. Layer 1020 may take the form of a combination of these layers as well, for example.
  • MBE molecular beam expitaxy
  • sputtering Sc 2 O 3 , MgO using MBE, or SiO 2 using LPCVD or PECVD.
  • Layer 1020 may take the form of a combination of these layers as well, for example.
  • structure 1000 B includes a patterned photoresist layer 1030 over protection or passivation layer 1020 .
  • Layer 1030 may have openings 1040 , 1050 corresponding to ohmic contact regions to layer 1010 , such as those corresponding to source 90 and/or drain 100 ( FIG. 8 ), for example.
  • Structure 1000 B may be subjected to a selective etch well suited for removing portions of layer 1020 exposed by openings 1040 , 1050 in layer 1030 .
  • structure 1000 B may be subjected to a wet etch such as dilute HF or buffered oxide etch (BOE).
  • a plasma etch may also be used for etching.
  • Layer 1020 which may be akin to layer 210 and take the form of a dense SiN x , may be etched using an inductivety coupled plasma (ICP) etch, for example.
  • ICP inductivety coupled plasma
  • SF 6 gas may be flowed at rates of 30 sccm during ignition and etching.
  • RF powers used may be around 50 W and 600 W during ignition and 5 W and 600 W during etching.
  • the etching may be carried out at around 20 mT and at about 10 deg. C.
  • the resulting structure 1000 C of FIG. 10C may then be subjected to an ICP etch prior to ohmic contact metallization deposition.
  • This ICP etch may be selected to remove less than around 50 angstroms of the barrier layer of the heterostructure 1010 , to better ensure an ohmic contact formation during metallization deposition and anneal.
  • BCl 3 and Cl 2 gases may be flowed at rates of 15 and 30 sccm, and RF power used may be around 40 W.
  • the etch may be carried out for about 20-60 seconds at around 5 mTorr. at about 10 deg. C.
  • N 2 gas may also be used at flow rates of 15 sccm.
  • RF powers used may be around 40 W for RF source and 300 W for ICP source.
  • the etch may be carried out for about 30-60 seconds at around 3 mTorr. at about 10 deg.
  • regions 1060 , 1070 may have N-vacancies created in heterostructure 1010 by the ICP etch treatment. Regions 1060 , 1070 of structure 1010 correspond to openings 1040 , 1050 . Regions 1060 , 1070 may correspond to ohmic contact regions for source and drain electrodes providing for improved device performance due to reduced ohmic contact resistances for source and drain electrodes.
  • Photo resist 1030 may be removed analogously to the photo resist removal discussed with regard to FIGS. 9A-9D . Remaining portions of layer 1020 may be utilized as surface passivation, analogous to layer 210 of FIG. 4 , or the layer may be removed and replaced.
  • one or more of layers 1020 , 1030 may be used as a lift off material for one or more metallization layers deposited to form ohmic contacts for the source and drain electrodes (e.g. layer 1195 of FIG. 11D ).
  • metallization layers deposited to form ohmic contacts for the source and drain electrodes (e.g. layer 1195 of FIG. 11D ).
  • standard Ti—Al—Ti—Au, Ti—Al—Mo—Au, Ti—Al—Ni—Au, or Ti—Al—Pt—Au metallization stacks may be used.
  • an optional pre-ohmic contact metal deposition cleaning of the exposed portions of regions 1060 and 1070 may be used to insure any native oxide is removed. For example, O 2 ashing and a wet diluted and buffered oxide etch may be used.
  • an RTA anneal at between 750 deg. C. and 850 deg. C. may be performed following ohmic contact metal liftoff processing to complete the formation of the ohmic contacts.
  • structure 1100 A is akin to structure 1000 B of FIG. 10B .
  • a further embodiment to reduce source drain resistance is to ion implant the source and drain regions prior to ohmic contact formation.
  • Such a method may implant Si + or Ge + or co-implant Si + and N + or Ge + and N + into portions of the heterostructure 1110 exposed through openings 1140 and 1150 in FIG. 11B formed in an analogous fashion to openings 1040 and 1050 in FIG. 10C .
  • Layer 1130 may be a thick photoresist or a metal mask to block the implant.
  • Layer 1120 may take the form of AlN to facilitate protection of the AlGaN/GaN heterostructure from damage during implant annealing.
  • Implanted regions 1160 and 1170 in FIG. 11C may be thermally activated between about 1000 deg. C. and 1300 deg. C. with an AlN mask.
  • the photoresist or metal mask may be removed from the wafer prior to annealing.
  • RTA may be used to activate the dopant.
  • the AlN anneal protection layer may be retained as the pasivation layer, or it may be removed and replaced by LPCVD silicon nitride.
  • ohmic contacts to layer 1110 through openings 1140 , 1150 in passivation layer 1120 corresponding to source and drain implanted regions may be provided.
  • a photo resist layer 1130 may be reapplied over passivation layer 1120 , analogously to the photo resist layers discussed hereinabove.
  • Photo resist layer 1130 may be patterned to reopen openings in passivation layer 1020 corresponding to previously implanted source and drain regions. Passivation layer 1020 openings are then ready for removal of the AlN to the AlGaN/GaN Heterostructure surface.
  • the exposed portions of the 1110 surface may be cleaned followed by ohmic contact metal deposition, liftoff processing and annealing as discussed previously. Standard liftoff lithography and metallization steps may be then used to provide source and drain electrodes 1192 and 1194 shown in FIG. 11E .
  • a Ti—Ni—Au source/drain metallization may be used.
  • the resulting device 1100 E may include a heterostructure 1110 including doped regions 1160 , 1170 , and passivation layer 1120 , and be largely analogous to the form of device 400 of FIG. 4 or 800 of FIG. 8 , absent ohmic contacts and source, drain and gate metallization, by way of non-limiting example only.
  • Structure 1200 D may take the form of a HEMT according to an aspect of the present invention, including drain and source electrodes 1192 , 1194 (that may be akin to drain and source 90 , 100 of FIG. 2 ), and a gate electrode 1298 (that may be akin to gate 80 of FIG. 2 ).
  • Structure 1200 A of FIG. 12A may be analogous to structure 1100 A of FIG. 11A , but in this case the opening in the photo resist is in the gate metallization region.
  • Photo resist layer 1230 may take the form of a PMMA, for example.
  • Layer 1230 may take the form of a 495 PMMA, for example. Layer 1230 may be spin coated onto structure 1100 E, for example. Layer 1230 may be well suited for use as a processing mask for gate dielectric opening and gate electrode 1298 liftoff formation, for example.
  • an opening 1295 may be formed in layer 1230 by e-beam exposure and developing as is shown in structure 1200 A.
  • the position and dimensions of opening 1295 may largely correspond to the position and footprint dimensions of gate 1298 through passivation layer 1120 .
  • Developer utilized may include MIBK:IPA.
  • a developer may also be used to remove remaining portions of PMMA layer 1230 .
  • etching may be used to remove portions of layer 1120 corresponding to opening 1295 .
  • a reactive ion etch (RIE) may be used for example.
  • a PT-72 RIE machine may be operated at about 0.04 mT, with a flow of 70 sccm CF 4 at about 150 W.
  • the barrier surface 1296 exposed in FIG. 12B is sensitive to RIE exposure and such exposure can reduce the 2DEG in the channel.
  • the RIE conditions may be selected to minimize 2DEG reduction.
  • a rapid thermal anneal (RTA) process may be used to remove the ion damage from RIE plasma etch.
  • a PMMA has been reapplied to the wafer in structure 1200 C such that the post develop opening 1297 overlaps the gate footprint opening 1296 .
  • Gate metal deposition and subsequent liftoff processing may be used, resulting in the HEMT structure 1200 D shown in FIG. 12D .
  • the preferred gate metallization is Ni/Pt/Au, with a total thickness of between about 0.4 and 0.8 ⁇ m.

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
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EP06740683A EP1872408A4 (fr) 2005-04-07 2006-04-07 Transistor a base de gan a haute mobilite electronique, et son procede de fabrication
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WO2006110511A3 (fr) 2007-03-22
US7851284B2 (en) 2010-12-14

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