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AU2003278828A1 - Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain - Google Patents

Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain

Info

Publication number
AU2003278828A1
AU2003278828A1 AU2003278828A AU2003278828A AU2003278828A1 AU 2003278828 A1 AU2003278828 A1 AU 2003278828A1 AU 2003278828 A AU2003278828 A AU 2003278828A AU 2003278828 A AU2003278828 A AU 2003278828A AU 2003278828 A1 AU2003278828 A1 AU 2003278828A1
Authority
AU
Australia
Prior art keywords
sicain
electronic devices
gallium nitride
devices based
buffer layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003278828A
Other versions
AU2003278828A8 (en
Inventor
John Kouvetakis
Radek Roucka
John Tolle
Ignatius S. T. Tsong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arizona's Public Universities
Original Assignee
University of Arizona
Arizona's Public Universities
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2002/033134 external-priority patent/WO2003033781A1/en
Application filed by University of Arizona, Arizona's Public Universities filed Critical University of Arizona
Publication of AU2003278828A1 publication Critical patent/AU2003278828A1/en
Publication of AU2003278828A8 publication Critical patent/AU2003278828A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2003278828A 2002-09-13 2003-09-15 Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain Abandoned AU2003278828A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41085902P 2002-09-13 2002-09-13
US60/410,859 2002-09-13
PCT/US2002/033134 WO2003033781A1 (en) 2001-10-16 2002-10-16 Low temperature epitaxial growth of quaternary wide bandgap semiconductors
AU2002360281 2002-10-16
PCT/US2003/029166 WO2004025707A2 (en) 2002-09-13 2003-09-15 Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain

Publications (2)

Publication Number Publication Date
AU2003278828A1 true AU2003278828A1 (en) 2004-04-30
AU2003278828A8 AU2003278828A8 (en) 2004-04-30

Family

ID=31994219

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003278828A Abandoned AU2003278828A1 (en) 2002-09-13 2003-09-15 Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain

Country Status (2)

Country Link
AU (1) AU2003278828A1 (en)
WO (1) WO2004025707A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060226442A1 (en) 2005-04-07 2006-10-12 An-Ping Zhang GaN-based high electron mobility transistor and method for making the same
US7371282B2 (en) * 2006-07-12 2008-05-13 Northrop Grumman Corporation Solid solution wide bandgap semiconductor materials
WO2008041249A1 (en) 2006-10-04 2008-04-10 Selex Sistemi Integrati S.P.A. Single voltage supply pseudomorphic high electron mobility transistor (phemt) power device and process for manufacturing the same
US8961687B2 (en) 2009-08-31 2015-02-24 Alliance For Sustainable Energy, Llc Lattice matched crystalline substrates for cubic nitride semiconductor growth
US8575471B2 (en) 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
US8507365B2 (en) 2009-12-21 2013-08-13 Alliance For Sustainable Energy, Llc Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
WO2012074523A1 (en) 2010-12-01 2012-06-07 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
WO2012074524A1 (en) 2010-12-01 2012-06-07 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
CN118983377B (en) * 2024-08-06 2025-09-16 江苏第三代半导体研究院有限公司 Epitaxial wafer and preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489128A (en) * 1981-06-30 1984-12-18 International Business Machines Corporation Structure containing epitaxial crystals on a substrate
JPH02223040A (en) * 1988-11-04 1990-09-05 Fuji Photo Film Co Ltd Magneto-optical recording medium
JPH03108136A (en) * 1989-09-20 1991-05-08 Sekisui Chem Co Ltd Optical recording medium and its production
JPH0548145A (en) * 1991-08-07 1993-02-26 Toshiba Corp Optical semiconductor device and manufacturing method thereof
US5281831A (en) * 1990-10-31 1994-01-25 Kabushiki Kaisha Toshiba Optical semiconductor device
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures
KR100277691B1 (en) * 1998-09-17 2001-02-01 정선종 Apparatus for manufacturing short wavelength optoelectronic device and method for manufacturing short wavelength optoelectronic device using same

Also Published As

Publication number Publication date
AU2003278828A8 (en) 2004-04-30
WO2004025707A3 (en) 2004-11-18
WO2004025707A2 (en) 2004-03-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase