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UA95395C2 - method for producing high-purity SILICON BY crucibleless zone melting - Google Patents

method for producing high-purity SILICON BY crucibleless zone melting

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Publication number
UA95395C2
UA95395C2 UAA201005841A UAA201005841A UA95395C2 UA 95395 C2 UA95395 C2 UA 95395C2 UA A201005841 A UAA201005841 A UA A201005841A UA A201005841 A UAA201005841 A UA A201005841A UA 95395 C2 UA95395 C2 UA 95395C2
Authority
UA
Ukraine
Prior art keywords
producing high
zone melting
purity silicon
crucibleless zone
crucibleless
Prior art date
Application number
UAA201005841A
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Николай Федорович Осауленко
Владимир Валентинович Севастьянов
Николай Александрович Крапивко
Эдуард Аполинариевич Бакай
Валерий Игоревич Богомаз
Виктор Сергеевич Ракитянский
Original Assignee
Николай Федорович Осауленко
Владимир Валентинович Севастьянов
Николай Александрович Крапивко
Эдуард Аполинариевич Бакай
Валерий Игоревич Богомаз
Виктор Сергеевич Ракитянский
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Николай Федорович Осауленко, Владимир Валентинович Севастьянов, Николай Александрович Крапивко, Эдуард Аполинариевич Бакай, Валерий Игоревич Богомаз, Виктор Сергеевич Ракитянский filed Critical Николай Федорович Осауленко
Priority to UAA201005841A priority Critical patent/UA95395C2/en
Publication of UA95395C2 publication Critical patent/UA95395C2/en

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Abstract

A method for producing high-purity silicon by crucibleless zone melting, according to which before the installation of the workpiece of metallurgical silicon in the holder of the induction furnace, its formation is carried out with the introduction of lanthanum into the forming mass.
UAA201005841A 2010-05-14 2010-05-14 method for producing high-purity SILICON BY crucibleless zone melting UA95395C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAA201005841A UA95395C2 (en) 2010-05-14 2010-05-14 method for producing high-purity SILICON BY crucibleless zone melting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAA201005841A UA95395C2 (en) 2010-05-14 2010-05-14 method for producing high-purity SILICON BY crucibleless zone melting

Publications (1)

Publication Number Publication Date
UA95395C2 true UA95395C2 (en) 2011-07-25

Family

ID=50835689

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA201005841A UA95395C2 (en) 2010-05-14 2010-05-14 method for producing high-purity SILICON BY crucibleless zone melting

Country Status (1)

Country Link
UA (1) UA95395C2 (en)

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