TWM602668U - Optical biometrics sensor with anti-cross-talk structure - Google Patents
Optical biometrics sensor with anti-cross-talk structure Download PDFInfo
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- TWM602668U TWM602668U TW109207772U TW109207772U TWM602668U TW M602668 U TWM602668 U TW M602668U TW 109207772 U TW109207772 U TW 109207772U TW 109207772 U TW109207772 U TW 109207772U TW M602668 U TWM602668 U TW M602668U
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- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
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Abstract
Description
本新型是有關於一種光學生物特徵感測器,且特別是有關於一種具有抗雜光干擾結構的光學生物特徵感測器,利用增厚的遮光層來達成防止雜光干擾的效果。 The present invention relates to an optical biometric sensor, and particularly relates to an optical biometric sensor with an anti-stray light interference structure, which uses a thickened light shielding layer to achieve the effect of preventing stray light interference.
現今的移動電子裝置(例如手機、平板電腦、筆記本電腦等)通常配備有使用者生物識別系統,包括了例如指紋、臉型、虹膜等等不同技術,用以保護個人數據安全,其中例如應用於手機或智慧型手錶等攜帶型裝置,也兼具有行動支付的功能,對於使用者生物識別更是變成一種標準的功能,而手機等攜帶型裝置的發展更是朝向全屏幕(或超窄邊框)的趨勢,使得傳統電容式指紋按鍵無法再被繼續使用,進而演進出新的微小化光學成像裝置(非常類似傳統的相機模組,具有互補式金屬氧化物半導體(Complementary Metal-Oxide Semiconductor(CMOS)Image Sensor(簡稱CIS))感測元件及光學鏡頭模組)。將微小化光學成像裝置設置於屏幕下方(可稱為屏下),透過屏幕部分透光(特別是有機發光二極體(Organic Light Emitting Diode,OLED)屏幕),可以擷取按壓於屏幕上方的物體的圖像,特別是指紋圖像,可以稱為屏幕下指紋感測(Fingerprint On Display,FOD)。 Today's mobile electronic devices (such as mobile phones, tablet computers, laptops, etc.) are usually equipped with user biometric systems, including different technologies such as fingerprints, face shapes, iris, etc., to protect personal data security, such as mobile phones Or smart watches and other portable devices also have the function of mobile payment, which has become a standard function for user biometrics, and the development of mobile phones and other portable devices is toward full screen (or ultra-narrow bezel) The trend of the traditional capacitive fingerprint button can no longer be used, and the evolution of a new miniaturized optical imaging device (very similar to the traditional camera module, with complementary metal-oxide semiconductor (CMOS) Image Sensor (CIS for short) sensing components and optical lens modules). The miniaturized optical imaging device is placed at the bottom of the screen (can be called under the screen), through the screen part of the light (especially organic light emitting diode (Organic Light Emitting Diode, OLED) screen), can capture the press on the top of the screen The image of the object, especially the fingerprint image, can be called Fingerprint On Display (FOD).
圖1至圖3分別顯示三種傳統的光學指紋感測器的示意圖。如圖1所示,傳統的屏幕下TFT光學指紋感測器300具有一感測基板310及一光機結構320來達到取像的目的,光機結構320為一種貼合式的光纖板(Fiber Optical Plate,FOP)當作準直結構(collimator),FOP具有有價格高昂和產能低的問題,不利於光學指紋感測器的發展。
Figures 1 to 3 respectively show schematic diagrams of three conventional optical fingerprint sensors. As shown in FIG. 1, the traditional under-screen TFT
如圖2所示,另一種傳統的屏幕下TFT光學指紋感測器400具有一感測基板410及一光機結構420來達到取像的目的,光機結構420為一種透鏡薄膜的貼合式的準直結構,微透鏡薄膜則是採用卷對卷(Roll to Roll)製程來生產,雖然具有價格低以及產能高的優勢,但仍有性能差等問題。
As shown in FIG. 2, another conventional under-screen TFT
如圖3所示,光機結構420具有遮光層425,透明介電層422及多個微透鏡424。因為傳統的設計主要認為只要遮光層425可以在光孔423達成作為信號光的正向光L1的透光效果即可,所以只知對光孔423的孔徑進行設計。然而,在某些狀況下,沒有被適當設計的遮光層425會讓斜向光L2對光感測元411所收到的信號光產生的雜光干擾(cross-talk),而造成信號光的信噪比變差,使得指紋圖像的品質不佳。
As shown in FIG. 3, the
因此,本新型的一個目的是提供一種具有抗雜光干擾結構的光學生物特徵感測器,利用增厚的遮光層來達成防止雜光干擾的效果,遮光層的厚度取決於光學生物特徵感測器的其他元件的佈局參數。 Therefore, one object of the present invention is to provide an optical biometric sensor with an anti-stray light interference structure, which uses a thickened shading layer to achieve the effect of preventing stray light interference. The thickness of the shading layer depends on the optical biometric sensor. The layout parameters of other components of the device.
為達上述目的,本新型提供一種光學生物特徵感測器至少包括:一感測基板,具有相鄰的一第一光感測元及一第二光感測元;一光模組層,至少包括:一遮光層,位於感測基板上,並且包括相鄰的 一第一光孔及一第二光孔;以及一透光支撐層,位於遮光層上及第一光孔與第二光孔中;及多個微透鏡,位於光模組層上。此等微透鏡包括相鄰的一第一微透鏡及一第二微透鏡,第一微透鏡將來自一物體的一正向光聚焦通過光模組層及第一光孔而到達第一光感測元,遮光層具有一預定厚度,使得來自物體的一斜向光通過第二微透鏡及光模組層而打在遮光層上,但不會進入第一光孔及第一光感測元中。遮光層的預定厚度為t,第一光孔的孔徑為d,光模組層的厚度為H,第一微透鏡與第二微透鏡的中心間距為P,其中,(t/d)>0.3*(H/P),t<H,且d<P。 To achieve the above objective, the present invention provides an optical biometric sensor at least comprising: a sensing substrate with a first light sensing element and a second light sensing element adjacent to each other; and a light module layer, at least Including: a light shielding layer located on the sensing substrate and including adjacent A first light hole and a second light hole; and a light-transmitting support layer located on the light shielding layer and in the first light hole and the second light hole; and a plurality of micro lenses located on the light module layer. These micro lenses include a first micro lens and a second micro lens adjacent to each other. The first micro lens focuses a forward light from an object through the light module layer and the first light hole to reach the first light sensor. For the sensing element, the light shielding layer has a predetermined thickness, so that an oblique light from the object passes through the second microlens and the light module layer and hits the light shielding layer, but does not enter the first light hole and the first light sensing element in. The predetermined thickness of the light shielding layer is t, the aperture of the first light hole is d, the thickness of the light module layer is H, and the center distance between the first microlens and the second microlens is P, where (t/d)>0.3 *(H/P), t<H, and d<P.
藉由上述光學生物特徵感測器,可以利用增厚的遮光層來達成防止雜光干擾的效果,遮光層的厚度取決於光學生物特徵感測器的其他元件的佈局參數。此遮光層為一種抗雜光干擾結構,對抗相鄰微透鏡所傳送過來的雜光干擾,使光學生物特徵感測器所獲得的生物特徵的圖像信號的信噪比更高,獲得品質較佳的指紋圖像。 With the above-mentioned optical biometric sensor, a thickened light shielding layer can be used to prevent stray light interference. The thickness of the light shielding layer depends on the layout parameters of other components of the optical biometric sensor. The light shielding layer is an anti-stray light interference structure, which resists the interference of stray light transmitted by adjacent microlenses, so that the signal-to-noise ratio of the image signal of the biological characteristic obtained by the optical biological characteristic sensor is higher, and the quality obtained is better. Excellent fingerprint image.
為讓本新型的上述內容能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above-mentioned content of the present invention more obvious and understandable, the following is a detailed description of preferred embodiments in conjunction with the accompanying drawings.
d,d2,d2:孔徑 d, d2, d2: aperture
F:物體 F: Object
H:厚度 H: thickness
P:中心間距 P: Center spacing
t:厚度 t: thickness
L1:正向光 L1: Forward light
L2:斜向光 L2: Oblique light
10:感測基板 10: Sensing substrate
11:第一光感測元 11: The first light sensor element
12:第二光感測元 12: The second light sensor element
13:玻璃基板 13: Glass substrate
14:半導體基板 14: Semiconductor substrate
20:光模組層 20: Optical module layer
21:第一光孔 21: The first light hole
22:第二光孔 22: second light hole
23:第一遮光膜 23: The first shading film
23A:第一子光孔 23A: The first sub-aperture
23B:第二子光孔 23B: second sub-aperture
24:第二遮光膜 24: second shading film
24A:第三子光孔 24A: third sub-aperture
24B:第四子光孔 24B: Fourth sub-aperture
25:遮光層 25: shading layer
26:透光支撐層 26: Transparent support layer
40:微透鏡 40: Micro lens
41:第一微透鏡 41: The first micro lens
42:第二微透鏡 42: second micro lens
50:顯示器 50: display
51,52:透光基板 51, 52: transparent substrate
100'、100:光學生物特徵感測器 100', 100: optical biometric sensor
300:光學指紋感測器 300: Optical fingerprint sensor
310:感測基板 310: Sensing substrate
320:光機結構 320: Optical machine structure
400:光學指紋感測器 400: Optical fingerprint sensor
410:感測基板 410: sensing substrate
411:光感測元 411: Light Sensor
420:光機結構 420: Optical machine structure
422:透明介電層 422: transparent dielectric layer
423:光孔 423: light hole
424:微透鏡 424: Micro lens
425:遮光層 425: shading layer
〔圖1〕至〔圖3〕分別顯示三種傳統的光學指紋感測器的示意圖。 [Figure 1] to [Figure 3] respectively show schematic diagrams of three conventional optical fingerprint sensors.
〔圖4〕顯示本新型較佳實施例的光學生物特徵感測器的示意圖。 [Figure 4] shows a schematic diagram of the optical biometric sensor of the preferred embodiment of the present invention.
〔圖5〕顯示〔圖4〕的一個變化例的示意圖。 [Figure 5] shows a schematic diagram of a variation of [Figure 4].
〔圖6〕顯示〔圖4〕與〔圖5〕的應用場合的示意圖。 [Figure 6] shows a schematic diagram of the applications of [Figure 4] and [Figure 5].
〔圖7〕顯示〔圖4〕與〔圖5〕的另一應用場合的示意圖。 [Figure 7] shows a schematic diagram of another application of [Figure 4] and [Figure 5].
〔圖8〕顯示〔圖4〕的另一變化例的示意圖。 [Figure 8] shows a schematic diagram of another variation of [Figure 4].
圖4顯示本新型較佳實施例的光學生物特徵感測器100的示意圖。如圖4所示,光學生物特徵感測器100是以指紋感測器作為例子來說明,但是並未將本新型限制於此,光學生物特徵感測器100也可以感測手指的血管圖像、血氧濃度圖像等生物特徵、或臉型、虹膜等生物特徵。光學生物特徵感測器100至少包括一感測基板10、一光模組層20及多個微透鏡40。
FIG. 4 shows a schematic diagram of the optical
感測基板10具有多個光感測元,排列成陣列,其中兩個相鄰的光感測元定義為一第一光感測元11及一第二光感測元12。
The
光模組層20至少包括一遮光層25以及一透光支撐層26。遮光層25位於感測基板10上,並且包括多個光孔,其中兩個相鄰的光孔定義為一第一光孔21及一第二光孔22。透光支撐層26位於遮光層25上及第一光孔21與第二光孔22中。
The
多個微透鏡40排列成陣列,並且位於光模組層20上。此等微透鏡40包括相鄰的一第一微透鏡41及一第二微透鏡42,第一微透鏡41將來自一物體F的一正向光L1聚焦通過光模組層20及第一光孔21而到達第一光感測元11。遮光層25具有一預定厚度,此預定厚度有相對應的舉升高度,且取決於感測基板10、光模組層20及微透鏡40的物理特徵參數,使得來自物體F的一斜向光L2通過第二微透鏡42及光模組層20而打在遮光層25上,但不會進入第一光孔21及第一光感測元11中。
A plurality of
值得注意的是,正向光L1可包含從第一光感測元11到第一微透鏡41的發散角範圍譬如±3度至±20度或±30度的光線,而斜向光L2包含除了正向光L1以外的光線。藉由上述的光學生物特徵感測器的遮光層的結構,即可輕易藉由增加遮光層的厚度來避免雜光干
擾。
It should be noted that the forward light L1 may include light with a divergence angle ranging from the first
雖然於圖4中,透光支撐層26包含單層透明介電層,然而於其他例子中,透光支撐層26亦可包含多層透明層的組合,譬如是紅外線濾光層、光柵層及透明介電層的至少兩者或三者的組合。另一方面,第二光感測元12與遮光層25之間可以含有其他絕緣層或絕緣層組,絕緣層組可以包含金屬線路層及金屬層間介電層等。於本例中,遮光層25當作遮光的部分為實心結構,亦即,遮光層25沿著預定厚度的方向(圖面的上下方向)具有一實心結構的截面。
Although in FIG. 4, the light-transmitting
在圖4中,預定厚度為t,第一光孔21的孔徑為d,光模組層20的厚度為H,第一微透鏡41與第二微透鏡42的中心間距為P,其中,(t/d)的數值大於0.3*(H/P),t<H,且d<P。(t/d)相當於第一光孔21的深寬比,申請人發現取決於厚度(H)及中心間距(P)的比值(至少為0.3),在製程上可實施的情況下,(t/d)的數值是越大越好。於一些例子中,(t/d)的數值介於2*(H/P)至0.3*(H/P)之間,介於1.8*(H/P)至0.4*(H/P)之間,介於1.6*(H/P)至0.5*(H/P)之間,介於1.4*(H/P)至0.6*(H/P)之間,介於1.3*(H/P)至0.7*(H/P)之間,介於1.2*(H/P)至>0.8*(H/P)之間或介於1.1*(H/P)至0.9*(H/P)之間。於一例中,(t/d)大約等於(H/P)。
In FIG. 4, the predetermined thickness is t, the aperture of the
於本例子中,感測基板10至少包括一玻璃基板13,第一光感測元11與第二光感測元12形成於玻璃基板13上。因此,光學生物特徵感測器100為一種薄膜電晶體(Thin-Film Transistor,TFT)光學生物特徵感測器。
In this example, the
圖5顯示圖4的一個變化例的示意圖。如圖5所示,本例子類似於圖4,差異在於遮光層25為空心的遮光層。亦即遮光層25
沿著預定厚度的方向具有一空心結構的截面。遮光層25至少包括一第一遮光膜23及一第二遮光膜24。第一遮光膜23位於感測基板10上,並具有相鄰的一第一子光孔23A及一第二子光孔23B。第二遮光膜24位於第一遮光膜23上方,並具有相鄰的一第三子光孔24A及一第四子光孔24B。第一光孔21包括第一子光孔23A與第三子光孔24A,第二光孔22包括第二子光孔23B與第四子光孔24B,第一遮光膜23與第二遮光膜24的最遠距離等於預定厚度。若預定厚度為t,第一子光孔23A的孔徑為d1,第三子光孔24A的孔徑為d2,則第一光孔21的孔徑d定義為d1與d2的平均值,t/[(d1+d2)/2]>0.3*(H/P),t<H,d1<P且d2<P。
在製程上可實施的情況下,t/[(d1+d2)/2]的數值是越大越好。於一些例子中,t/[(d1+d2)/2]的數值介於2*(H/P)至0.3*(H/P)之間,介於1.8*(H/P)至0.4*(H/P)之間,介於1.6*(H/P)至0.5*(H/P)之間,介於1.4*(H/P)至0.6*(H/P)之間,介於1.3*(H/P)至0.7*(H/P)之間,介於1.2*(H/P)至>0.8*(H/P)之間或介於1.1*(H/P)至0.9*(H/P)之間。於一例中,t/[(d1+d2)/2]大約等於(H/P)。於本例中,雖然d1<d2,但是於其他例中,可以是d1=d2或d1>d2。
Fig. 5 shows a schematic diagram of a modification of Fig. 4. As shown in FIG. 5, this example is similar to FIG. 4, except that the
圖6顯示圖4與圖5的應用場合的示意圖。如圖6所示,類似於光學生物特徵感測器100且與顯示畫素(未顯示)穿插整合的光學生物特徵感測器100'可以應用於有機發光二極體(Organic Light Emitting Diode,OLED)顯示器或液晶顯示器(Liquid Crystal Display,LCD)或任何有應用到TFT製程來製作TFT感測器的其他顯示器中,為一種內嵌式(in-cell)感測器。因此,玻璃基板13為顯示器50的兩個相對的透光基板51,52的其中一個(於此圖6中是指下方的透光基板51,也可以說玻璃基板13是透光基板51的一部分)。兩透光基板51與52之間的材料
層可以是OLED或LCD所具有的材料層。雖然圖6是以局部範圍的光學生物特徵感測器100'作為例子來說明,但是並未將本揭露內容限制於此。光學生物特徵感測器100'也可以延伸到涵蓋整個顯示器50的所有範圍,而成為一種全屏式的光學生物特徵感測器。
Fig. 6 shows a schematic diagram of the application scenarios of Figs. 4 and 5. As shown in FIG. 6, the optical biometric sensor 100' which is similar to the optical
圖7顯示圖4與圖5的另一應用場合的示意圖。如圖7所示,光學生物特徵感測器100可以設置於OLED、LCD或有應用到TFT製程來製作TFT感測器的其他顯示器50的下方,為一種獨立的感測器。
FIG. 7 shows a schematic diagram of another application situation of FIG. 4 and FIG. 5. As shown in FIG. 7, the optical
圖8顯示圖4的另一變化例的示意圖。如圖8所示,本例子類似於圖4,差異在於感測基板10至少包括一個半導體基板14,第一光感測元11與第二光感測元12形成於半導體基板14上,半導體基板譬如是矽基板。亦即,光學生物特徵感測器100為一種應用互補式金屬氧化物半導體(Complementary metal-oxide semiconductor,CMOS)圖像感測器。
Fig. 8 shows a schematic diagram of another modification of Fig. 4. As shown in Figure 8, this example is similar to Figure 4, the difference is that the
藉由上述實施例,可以利用增厚的遮光層來達成防止雜光干擾的效果,遮光層的厚度取決於光學生物特徵感測器的其他元件的佈局參數。此遮光層為一種抗雜光干擾結構,對抗相鄰微透鏡所傳送過來的雜光干擾,使光學生物特徵感測器所獲得的生物特徵的圖像信號的信噪比更高,獲得品質較佳的指紋圖像。 With the above-mentioned embodiments, a thickened light shielding layer can be used to achieve the effect of preventing stray light interference. The thickness of the light shielding layer depends on the layout parameters of other components of the optical biometric sensor. The light shielding layer is an anti-stray light interference structure, which resists the interference of stray light transmitted by adjacent microlenses, so that the signal-to-noise ratio of the image signal of the biological characteristic obtained by the optical biological characteristic sensor is higher, and the quality obtained is better. Excellent fingerprint image.
在較佳實施例的詳細說明中所提出的具體實施例僅用以方便說明本新型的技術內容,而非將本新型狹義地限制於上述實施例,在不超出本新型的精神及申請專利範圍的情況下,所做的種種變化實施,皆屬於本新型的範圍。 The specific embodiments proposed in the detailed description of the preferred embodiments are only used to facilitate the description of the technical content of the present invention, rather than restricting the present invention to the above embodiments in a narrow sense, and do not exceed the spirit of the present invention and the scope of the patent application. Under the circumstance, the various changes and implementations made belong to the scope of this new model.
d:孔徑 d: aperture
H:厚度 H: thickness
P:中心間距 P: Center spacing
t:厚度 t: thickness
F:物體 F: Object
L1:正向光 L1: Forward light
L2:斜向光 L2: Oblique light
10:感測基板 10: Sensing substrate
11:第一光感測元 11: The first light sensor element
12:第二光感測元 12: The second light sensor element
13:玻璃基板 13: Glass substrate
20:光模組層 20: Optical module layer
21:第一光孔 21: The first light hole
22:第二光孔 22: second light hole
25:遮光層 25: shading layer
26:透光支撐層 26: Transparent support layer
40:微透鏡 40: Micro lens
41:第一微透鏡 41: The first micro lens
42:第二微透鏡 42: second micro lens
100:光學生物特徵感測器 100: Optical biometric sensor
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR2020200002437U KR200495784Y1 (en) | 2019-12-30 | 2020-07-08 | Optical biometric sensor with anti-cross-talk structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962955069P | 2019-12-30 | 2019-12-30 | |
| US62/955,069 | 2019-12-30 |
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| TWM602668U true TWM602668U (en) | 2020-10-11 |
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| TWI812081B (en) * | 2021-03-19 | 2023-08-11 | 群創光電股份有限公司 | Sensing device |
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| JP2010094499A (en) * | 2008-09-16 | 2010-04-30 | Hitachi Maxell Ltd | Image acquisition apparatus and biometric information acquisition apparatus |
| CN107451518A (en) * | 2016-05-30 | 2017-12-08 | 深圳印象认知技术有限公司 | A kind of display screen |
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2020
- 2020-06-19 TW TW109207772U patent/TWM602668U/en not_active IP Right Cessation
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| KR20210001590U (en) | 2021-07-09 |
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