TWI753775B - Sensing device - Google Patents

Abstract

A sensing device including a sensing structure layer, a first insulating layer, a second insulating layer, a first light blocking pattern, a second light blocking pattern, and a plurality of micro lenses. The sensing structure layer includes a plurality of sensing components. The first insulating layer is located on the sensing structure layer and includes a first opening, wherein the first opening includes a first longitudinal opening and a first lateral opening. The second insulating layer is located on the first insulating layer and includes a second opening, wherein the second opening includes a second longitudinal opening and a second lateral opening. The first light blocking pattern is located on the sensing structure layer and corresponds to the first opening and the second opening, wherein the first light blocking pattern includes a color resist stack. The second light blocking pattern and the plurality of micro lenses are located on the second insulating layer.

Description

sensing device

The present invention relates to a sensing device, and more particularly, to a fingerprint sensing device.

Currently, portable electronic devices equipped with biometric identification systems (such as fingerprints or iris) are developing towards full-screen or ultra-narrow bezels. Therefore, in recent years, under-screen optical sensors have been used in portable electronic devices. In the above-mentioned under-screen optical sensor, a miniature optical imaging device is arranged below the screen of the portable electronic device, and the image of the object pressed above the screen is captured through a part of the light-transmitting area of the screen. Taking an under-screen fingerprint sensor as an example, it generally includes a sensing structure layer and an optomechanical structure layer disposed above it, wherein the optomechanical structure layer has a microlens and must be designed with a certain thickness to serve as a focal length, so that the light The organic structure layer includes a thick film structure with multiple layers stacked on each other; however, the thick film structure itself has a large stress, which causes the problem of warpage of the fingerprint sensor after formation, which is useful for subsequent operations such as the fingerprint sensor. Processes such as cutting or bonding with the display panel will have adverse effects.

The present invention provides a sensing device, which can solve the problem of warpage caused by the multi-layer structure.

The sensing device of the present invention includes a sensing structure layer, a first insulating layer, a second insulating layer, a first shading pattern, a second shading pattern, and a plurality of microlenses. The sensing structure layer is located on the substrate and includes a plurality of sensing elements. The first insulating layer is located on the sensing structure layer and has a first opening, wherein the first opening includes a first longitudinal opening and a first lateral opening. The second insulating layer is located on the first insulating layer and has a second opening, wherein the second opening includes a second longitudinal opening and a second lateral opening. The first light-shielding pattern is disposed on the sensing structure layer and corresponding to the first opening and the second opening, wherein the first light-shielding pattern includes a color resist stack. The second light shielding pattern is located on the second insulating layer and defines a light passing area. A plurality of microlenses are located in the light passing area. The projections of the first longitudinal opening and the second longitudinal opening on the substrate along the normal direction of the substrate do not overlap, and the projections of the first transverse opening and the second transverse opening on the substrate along the normal direction of the substrate do not overlap.

In an embodiment of the present invention, the above-mentioned first light shielding pattern is formed in the first opening and the second opening.

In an embodiment of the present invention, part of the above-mentioned first light shielding pattern is formed in the first opening, and part of the second insulating layer is formed in the second opening.

In an embodiment of the present invention, the first opening and the second opening do not overlap with the projections of the plurality of sensing elements on the substrate along the normal direction of the substrate.

In an embodiment of the present invention, the transmittance of the color resist stack is less than 30%.

In an embodiment of the present invention, the above-mentioned color resist stack includes a first color resist and a second color resist stacked on each other, wherein the first color resist and the second color resist have different colors.

In an embodiment of the present invention, the above-mentioned color resist stack includes a first color resist, a second color resist and a third color resist stacked on each other, wherein the first color resist, the second color resist and the third color resist are between with different colors.

In an embodiment of the present invention, the above-mentioned sensing device further includes a third insulating layer, a third light shielding pattern, a fourth insulating layer, a fourth light shielding pattern, and a light filter layer. The third insulating layer is located between the sensing structure layer and the first insulating layer. The third light shielding pattern is on the third insulating layer. The fourth insulating layer is located on the third insulating layer and covers the third light shielding pattern. The fourth light shielding pattern is located on the fourth insulating layer. The filter layer is located on the fourth insulating layer and covers the fourth light shielding pattern.

Based on the above, in the sensing device of the present invention, at least two organic layers are provided with a plurality of openings including longitudinal openings and lateral openings, wherein the longitudinal openings (and lateral openings) of adjacent organic layers are along the substrate. The projection of the line direction on the substrate does not overlap, and the first light-shielding pattern is arranged corresponding to a plurality of openings, thereby reducing the stress of the original unpatterned multilayer organic layer, so as to achieve the effect of stress dispersion, thereby avoiding this problem. The sensing device of the embodiment has a problem of warpage due to the multi-layer structure.

FIG. 1A is a schematic top view of the sensing device according to the first embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the sensing device according to the line A1-A1' of FIG. 1A .

1A and 1B at the same time, the sensing device 100 of this embodiment includes a substrate SB, a sensing structure layer SE, an organic layer PL2, a light-shielding pattern BM1, an organic layer PL3, a light-shielding pattern BM2, a filter layer FL, and an organic layer PL4, the organic layer PL5, the light shielding pattern BM3, the light shielding pattern BM4, and the plurality of microlenses ML.

In some embodiments, the substrate SB may be a flexible substrate or a rigid substrate. In some embodiments, the sensing structure layer SE may include the following components, but it should be noted that the present invention is not limited thereto. The sensing structure layer SE may include, for example, a plurality of sensing elements SC, scan lines (not shown) and read lines (not shown). In addition, the sensing structure layer SE may further include wirings such as power supply lines (not shown), which are not limited in the present invention. It is worth mentioning that, for example, a buffer layer (not shown) may be disposed between the substrate SB and the sensing structure layer SE. The material of the buffer layer can be silicon oxide, silicon nitride, or a stacked layer of at least two of the above-mentioned materials, which is not limited in the present invention.

In some embodiments, the sensing device 100 of this embodiment may further include an active element (not shown). The active element is, for example, located on the substrate SB, and includes, for example, a gate electrode, a semiconductor layer, a source electrode and a drain electrode. For example, the gate electrodes are arranged corresponding to the semiconductor layers, and an inter-gate insulating layer GL is arranged between them. The source electrode and the drain electrode are disposed on the inter-gate insulating layer GL and are partially in contact with the semiconductor layer. The scan line can be electrically connected to the source of the active element, and the read line can be electrically connected to the drain of the active element, so as to read the signal sensed by the sensing element SC. In this embodiment, the active element is any bottom gate type thin film transistor known to those skilled in the art. However, although this embodiment takes the bottom gate type thin film transistor as an example, the present invention is not limited thereto. In other embodiments, the active element may also be a top gate type thin film transistor or other suitable type of thin film transistor.

The plurality of sensing elements SC are located on the substrate SB, for example, and each includes a first electrode SC1, a photosensitive layer SC2 and a second electrode SC3. The first electrode SC1 , the photosensitive layer SC2 and the second electrode SC3 are sequentially stacked on the substrate SB, for example, in this order. In some embodiments, the area of the second electrode SC3 is larger than that of the photosensitive layer SC2, and the outlines of the first electrode SC1 and the second electrode SC3 may partially overlap. In some embodiments, the first electrode SC1 and the second electrode SC3 may include a transparent conductive material or an opaque conductive material, which depends on the application of the sensing device 100 . In this embodiment, the sensing device 100 can be used as an under-screen fingerprint sensor. Therefore, light from the outside world (such as light reflected by a fingerprint) will pass through the second electrode SC3 and be incident on the photosensitive layer SC2, based on Therefore, the second electrode SC3 is made of a light-transmitting conductive material. The photosensitive layer SC2 has the property of converting light energy into electrical energy, so as to realize the function of optical sensing. In some embodiments, the material of the photosensitive layer SC2 may include a silicon-rich material, which may be silicon-rich oxide, silicon-rich nitride, silicon-rich oxynitride, silicon-rich carbide, silicon-rich oxycarbide, hydrogen-rich silicon-rich material oxides, hydrogenated silicon-rich nitrides, hydrogenated silicon-rich carbides, or other suitable materials or combinations thereof.

In some embodiments, the sensing structure layer SE further includes an organic layer PL1. The organic layer PL1 is, for example, located on the first electrode SC1 of the sensing element SC. In some embodiments, the organic layer PL1 has an opening O exposing the first electrode SC1 of the sensing element SC, wherein the photosensitive layer SC2 is located in the opening O to contact the first electrode SC1, and the second electrode SC3 is disposed in the organic layer PL1 and Contact with the photosensitive layer SC2. The formation method of the organic layer PL1 is formed by, for example, a spin coating method. The material of the organic layer PL1 is, for example, an organic insulating material, which may be polyimide, polyester, benzocyclobutene (BCB), polymethylmethacrylate (PMMA), polyvinylphenol (polyvinylphenol). (4-vinylphenol), PVP), polyvinyl alcohol (PVA), polytetrafluoroethylene (PTFE), hexamethyldisiloxane (HMDSO) or a stack of at least two of the above materials , but the present invention is not limited to this. In this embodiment, the organic layer PL1 has a single-layer structure, but the present invention is not limited to this. In other embodiments, the organic layer PL1 may be a multi-layer structure.

The organic layer PL2 is, for example, located on the organic layer PL1 and covers the second electrode SC3 of the sensing element SC. The formation method of the organic layer PL2 is formed by, for example, a spin coating method. The material of the organic layer PL2 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethylene disiloxane or a stacked layer of the above at least two materials, but the present invention is not limited to this. In this embodiment, the organic layer PL2 has a single-layer structure, but the present invention is not limited to this. In other embodiments, the organic layer PL2 may be a multi-layer structure.

In some embodiments, the sensing device 100 of this embodiment may further include an inorganic layer BP1. When the material with poor adhesion to the organic layer PL2 is selected for the subsequent light-shielding pattern BM1, the light-shielding pattern BM1 can be disposed on the inorganic layer BP1 by disposing the inorganic layer BP1 on the organic layer PL2, as illustrated in this embodiment. However, it should be noted that the present invention is not limited to this. In other embodiments, if the light-shielding pattern BM1 is selected from a material with strong adhesion to the organic layer PL2, the inorganic layer BP1 may not be provided. The inorganic layer BP1 of the present embodiment is, for example, located on the organic layer PL2. The formation method of the inorganic layer BP1 is formed by, for example, a physical vapor deposition method or a chemical vapor deposition method. In this embodiment, the material of the inorganic layer BP1 may be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials, but the invention is not limited to this. In this embodiment, the inorganic layer BP1 has a single-layer structure, but the present invention is not limited to this. In other embodiments, the inorganic layer BP1 may be a multi-layer structure.

The light shielding pattern BM1 is located on the organic layer PL2, for example. In some embodiments, in the case where the inorganic layer BP1 is provided, the light shielding pattern BM1 is located on the inorganic layer BP1. The light-shielding pattern BM1 is, for example, used to define the light passing region LR1. Specifically, the material of the light-shielding pattern BM1 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, and/or aforementioned materials. oxynitride, or other suitable light-shielding and/or reflective materials. In some embodiments, the material of the light-shielding pattern BM1 may be molybdenum, molybdenum oxide or stacked layers thereof. Based on this, the light passing region LR1 can be defined in the region where the light shielding pattern BM1 is not provided. The setting of the light shielding pattern BM1 can effectively prevent stray light from being incident on the plurality of sensing elements SC, so as to prevent the stray light from affecting the sensing result. In this embodiment, the light passing region LR1 is disposed corresponding to each sensing element SC, so that the sensing element SC can convert the light passing through the light passing region LR1 from the outside into corresponding electrical signals. In addition, in some embodiments, the region provided with the light-shielding pattern BM1 may be used to shield the active element (not shown in the drawings). In detail, the light-shielding pattern BM1 may be located above the active element and at least shield the semiconductor layer of the active element, thereby preventing light from the outside from irradiating the semiconductor layer, thereby preventing leakage of the active element. The method for forming the light-shielding pattern BM1 is, for example, firstly forming a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light shielding pattern material layer. After that, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form a light-shielding pattern BM1.

The organic layer PL3 is, for example, located on the organic layer PL2 and covers the light shielding pattern BM1. In some embodiments, where the inorganic layer BP1 is provided, the organic layer PL3 is located on the inorganic layer BP1. The formation method of the organic layer PL3 is formed by, for example, a spin coating method. The material of the organic layer PL3 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethylene disiloxane or a stacked layer of the above at least two materials, but the present invention is not limited to this. In this embodiment, the organic layer PL3 has a single-layer structure, but the present invention is not limited to this. In other embodiments, the organic layer PL3 may be a multi-layer structure.

In some embodiments, the sensing device 100 of this embodiment may further include an inorganic layer BP2. When the material with poor adhesion to the organic layer PL3 is selected for the subsequent light-shielding pattern BM2, the light-shielding pattern BM2 can be disposed on the inorganic layer BP2 by disposing the inorganic layer BP2 on the organic layer PL3, as exemplified in this embodiment. However, it should be noted that the present invention is not limited to this. In other embodiments, if the light-shielding pattern BM2 is selected from a material with strong adhesion to the organic layer PL3, the inorganic layer BP2 may not be provided. The inorganic layer BP2 of this embodiment is, for example, located on the organic layer PL3. The formation method of the inorganic layer BP2 is formed by, for example, a physical vapor deposition method or a chemical vapor deposition method. In some embodiments, the material of the inorganic layer BP2 may be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials. In this embodiment, the material of the inorganic layer BP2 is silicon nitride. In this embodiment, the inorganic layer BP2 has a single-layer structure, but the present invention is not limited to this. In other embodiments, the inorganic layer BP2 may be a multi-layer structure.

The light shielding pattern BM2 is located on the organic layer PL3, for example. In some embodiments, in the case where the inorganic layer BP2 is provided, the light shielding pattern BM2 is located on the inorganic layer BP2. The light-shielding pattern BM2 is, for example, used to define the light passing region LR2. Specifically, the material of the light-shielding pattern BM2 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, and/or aforementioned materials. oxynitride, or other suitable light-shielding and/or reflective materials. In some embodiments, the material of the light-shielding pattern BM2 may be molybdenum, molybdenum oxide or stacked layers thereof. Based on this, the light passing region LR2 can be defined in the region where the light shielding pattern BM2 is not provided. The setting of the light shielding pattern BM2 can effectively prevent stray light from being incident on the plurality of sensing elements SC, so as to prevent the stray light from affecting the sensing result. In this embodiment, the setting of the light passing area LR2 corresponding to the light passing area LR1, that is, the setting corresponding to the sensing element SC, so that the sensing element SC can pass through the light passing area LR2 and the light passing area LR1. External light is converted into corresponding electrical signals. The method of forming the light-shielding pattern BM2 is, for example, firstly forming a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light shielding pattern material layer. After that, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form a light-shielding pattern BM2.

The filter layer FL is, for example, located on the organic layer PL3 and covers the light shielding pattern BM2. In some embodiments, where the inorganic layer BP2 is provided, the filter layer FL is located on the inorganic layer BP2. The filter layer FL can, for example, provide a filtering effect. Specifically, in this embodiment, the filter layer FL may be an IR-cut filter layer. That is, when the sensing element SC of this embodiment converts the visible light from the outside into an electrical signal, it usually converts the infrared light that cannot be seen by the naked eye into an electrical signal, so that when the electrical signal is converted into an image display, the display The resulting image is susceptible to distortion or dispersion due to infrared light. Based on this, the present embodiment can avoid this problem by disposing the filter layer FL. However, the present invention is not limited to this. When the sensing element SC of this embodiment converts infrared light from the outside into electrical signals, the filter layer FL of this embodiment can be an IR pass filter. light layer. In addition, in other embodiments, the filter layer FL may also be other types of filter layers, so as to have an anti-counterfeiting effect.

The organic layer PL4 is, for example, located on the filter layer FL and has a first opening OP1. A method for forming the organic layer PL4 is, for example, firstly, using a spin coating method to form an organic pattern material layer (not shown). Next, a patterned photoresist material layer (not shown) is formed on the organic pattern material layer. Then, using the patterned photoresist layer as a mask, an etching process is performed on the organic pattern material layer. The material of the organic layer PL4 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethylmethacrylate, polyvinylphenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethylene disiloxane or a stacked layer of the above at least two materials, but the present invention is not limited to this. In this embodiment, the organic layer PL4 has a single-layer structure, but the present invention is not limited to this. In other embodiments, the organic layer PL4 may be a multi-layer structure. In this embodiment, the first opening OP1 of the organic layer PL4 includes a plurality of first longitudinal openings OP11 and a plurality of first lateral openings OP12 , wherein the extending directions of the first longitudinal openings OP11 and the extending directions of the first lateral openings OP12 intertwined with each other. In addition, the projection of the first opening OP1 on the substrate SB along the normal direction n of the substrate SB does not overlap at all with the projection of the sensing element SC on the substrate SB along the normal direction n of the substrate SB.

The light shielding pattern BM3 is located on the filter layer FL, for example. In this embodiment, a part of the light shielding pattern BM3 is disposed corresponding to the first opening OP1 of the organic layer PL4, and another part of the light shielding pattern BM3 is located on the organic layer PL4. The above-mentioned light-shielding pattern BM3 corresponding to the first opening OP1 is, for example, filled in the first opening OP1, so that it can effectively prevent stray light from passing through the first opening OP1 and incident on the plurality of sensing elements SC, so as to prevent the stray light from affecting the sensing elements. test results. Furthermore, since the projection of the first opening OP1 on the substrate SB along the normal direction n of the substrate SB does not overlap with the projection of the sensing element SC on the substrate SB along the normal direction n of the substrate SB, filling in the first opening OP1 does not overlap at all. The light-shielding pattern BM3 in the opening OP1 can avoid disturbing the light from the outside (eg, light reflected by a fingerprint) from traveling to the sensing element SC. In some embodiments, the light blocking pattern BM3 includes a color resist stack, that is, includes at least two color resists stacked on each other and having different colors. For example, the light-shielding pattern BM3 may include a first color resist and a second color resist stacked on each other, wherein the first color resist and the second color resist have different colors. Alternatively, the light shielding pattern BM3 may include a first color resistance, a second color resistance and a third color resistance stacked on each other, wherein the first color resistance, the second color resistance and the third color resistance have different colors. The above-mentioned colors can be red, blue, green or other colors. The color resist stack included in the light shielding pattern BM3 has the above-mentioned structure, so that its transmittance can be less than 30%, thereby achieving the effect of preventing stray light from affecting the sensing result. In addition, compared with the case where black metal or black resin is used as the material of the light-shielding pattern BM3, making the light-shielding pattern BM3 composed of color resists stacked on each other can have the effect of convenient manufacturing process. It is worth mentioning that, in other embodiments, the shading pattern BM3 may also include black metal or black resin, so as to achieve the above-mentioned effects.

The organic layer PL5 is, for example, located on the organic layer PL4 and has the second opening OP2. A method for forming the organic layer PL5 is, for example, firstly using a spin coating method to form an organic pattern material layer (not shown). Next, a patterned photoresist material layer (not shown) is formed on the organic pattern material layer. Then, using the patterned photoresist layer as a mask, an etching process is performed on the organic pattern material layer. The material of the organic layer PL5 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethylene disiloxane or a stacked layer of the above at least two materials, but the present invention is not limited to this. In this embodiment, the organic layer PL5 has a single-layer structure, but the present invention is not limited to this. In other embodiments, the organic layer PL5 may be a multi-layer structure. In this embodiment, the second opening OP2 of the organic layer PL5 includes a plurality of second longitudinal openings OP21 and a plurality of second lateral openings OP22 , wherein the extending directions of the second longitudinal openings OP21 and the extending directions of the second lateral openings OP22 intertwined with each other. In this embodiment, the above-mentioned other part of the light-shielding pattern BM3 on the organic layer PL4 is disposed corresponding to the second opening OP2, that is, filled in the second opening OP2, so that the stray light can be effectively prevented from passing through the second opening OP2. The opening OP2 is incident to the plurality of sensing elements SC, so as to avoid stray light from affecting the sensing results. In addition, the projection of the second opening OP2 on the substrate SB along the normal direction n of the substrate SB does not overlap completely with the projection of the sensing element SC on the substrate SB along the normal direction n of the substrate SB, so that the second opening is filled in the second opening The light-shielding pattern BM3 in OP2 can avoid disturbing light from the outside (eg, light reflected by a fingerprint) traveling to the sensing element SC.

In some embodiments, the extending direction of the first longitudinal openings OP11 of the organic layer PL4 and the extending direction of the second longitudinal openings OP21 of the organic layer PL5 are substantially parallel. In addition, in some embodiments, the projections of the first longitudinal opening OP11 and the second longitudinal opening OP21 on the substrate SB along the normal direction n of the substrate SB do not overlap. Based on the above-mentioned arrangement relationship between the first longitudinal opening OP11 and the second longitudinal opening OP21, the projections of the first longitudinal opening OP11 and the second longitudinal opening OP21 on the substrate SB along the normal direction n of the substrate SB will be arranged in a staggered arrangement. This can reduce the stress of the original unpatterned multi-layer organic layers, so as to achieve the effect of stress dispersion, thereby avoiding the problem of warpage caused by the multi-layer structure of the sensing device 100 of this embodiment.

Similarly, in some embodiments, the extending direction of the first lateral openings OP12 of the organic layer PL4 and the extending direction of the second lateral openings OP22 of the organic layer PL5 are substantially parallel. In addition, in some embodiments, the projections of the first lateral opening OP12 and the second lateral opening OP22 on the substrate SB along the normal direction n of the substrate SB do not overlap. Based on the above-mentioned arrangement relationship between the first lateral opening OP12 and the second lateral opening OP22, the projections of the first lateral opening OP12 and the second lateral opening OP22 on the substrate SB along the normal direction n of the substrate SB are arranged in a dislocation arrangement. This can also reduce the stress of the original unpatterned multi-layer organic layer, so as to achieve the effect of stress dispersion, thereby avoiding the problem of warpage caused by the multi-layer structure of the sensing device 100 of this embodiment.

The light shielding pattern BM4 is located on the organic layer PL5, for example, and is used to define the light passing region LR3. In detail, the material of the light-shielding pattern BM4 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the foregoing materials, oxides of the foregoing materials, oxynitrides of the foregoing materials, or other suitable light-shielding and / or reflective material. In some embodiments, the material of the light-shielding pattern BM4 may be molybdenum, molybdenum oxide or stacked layers thereof. Based on this, the light passing region LR3 can be defined in the region where the light shielding pattern BM4 is not provided. The setting of the light shielding pattern BM4 can effectively prevent stray light from being incident on the plurality of sensing elements SC, so as to prevent the stray light from affecting the sensing result. In the present embodiment, the setting corresponding to the light passing area LR3 and the light passing area LR2, that is, the setting corresponding to the sensing element SC, so that the sensing element SC can pass through the light passing area LR3, the light passing area LR2 and the The light passing through the outside of the region LR1 is converted into a corresponding electrical signal. The method of forming the light-shielding pattern BM4 is, for example, firstly forming a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light shielding pattern material layer. Then, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form a light-shielding pattern BM4. In some embodiments, an inorganic layer (not shown) may be disposed between the light-shielding pattern BM4 and the organic layer PL5 , but the invention is not limited thereto.

The plurality of microlenses ML are, for example, located on the organic layer PL5 and disposed in the third light passing region LR3. In detail, the plurality of microlenses ML are located in the third light passing region LR3 defined by the light shielding pattern BM3, and are arranged corresponding to the plurality of sensing elements SC. For example, the plurality of microlenses ML are arranged in an array and have a central axis (not shown) passing through the center thereof. In some embodiments, the first light passing region LR1 and the second light passing region LR2 also have a central axis (not shown) passing through the center thereof, wherein the central axis of each microlens ML can be aligned with the first light passing region The central axis of one of the LR1 and the second light passing region LR2 is aligned, but the present invention is not limited thereto. Based on this, a plurality of microlenses ML can be used to further improve the effect of light utilization, so as to increase the incident amount of collimated light, improve image contrast, and reduce the problems of light leakage and light mixing caused by scattered light or refracted light. In some embodiments, the plurality of microlenses ML may be symmetric lenticular lenses, asymmetric lenticular lenses, plano-convex lenses or meniscus lenses, but the invention is not limited thereto. In addition, each or more of the plurality of microlenses ML may be arranged corresponding to one sensing element SC, but the invention is not limited thereto.

Based on the above, in this embodiment, at least two organic layers are provided with a plurality of openings including longitudinal openings and lateral openings, wherein the longitudinal openings (and lateral openings) of adjacent organic layers are located at a distance from each other along the normal direction of the substrate. The projections on the substrate do not overlap, and the first shading pattern is arranged corresponding to the plurality of openings, thereby reducing the stress of the original unpatterned multi-layer organic layer, so as to achieve the effect of stress dispersion, thereby avoiding the problem of this embodiment. The sensing device has a problem of warpage due to the multi-layer structure. Furthermore, in this embodiment, a light-shielding pattern stacked by color resists is also arranged in the corresponding regions of the above-mentioned openings. In addition to the convenience of the process, it can also be used to shield large-angle light (such as oblique light) from the outside world. ) and avoid the phenomenon of light leakage, and improve the signal-to-noise ratio of light to obtain a clearer image.

2A is a schematic top view of a sensing device according to a second embodiment of the present invention. FIG. 2B is a schematic cross-sectional view of the sensing device according to the line A2-A2' of FIG. 2A . It must be noted here that the embodiments shown in FIGS. 2A and 2B respectively use the element numbers and part of the contents of the embodiment in FIGS. 1A and 1B , wherein the same or similar reference numbers are used to represent the same or similar elements, and The description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the descriptions and effects of the foregoing embodiments, and the following embodiments will not be repeated.

2A and 2B at the same time, the main difference between the sensing device 200 of the present embodiment and the sensing device 100 of the previous embodiment is that a part of the light shielding pattern BM3 is disposed corresponding to the first opening OP1 of the organic layer PL4, and The other part of the light shielding pattern BM3 is covered by the organic layer PL4. In this embodiment, the above-mentioned light shielding pattern BM3 corresponding to the first opening OP1 is filled in the first opening OP1, and the organic layer PL4 covering another part of the light shielding pattern BM3 will be filled in the second organic layer PL5. Opening OP2.

Based on this, in this embodiment, at least two organic layers are provided with a plurality of openings including longitudinal openings and lateral openings, wherein the longitudinal openings (and lateral openings) of adjacent organic layers are along the normal direction of the substrate. The projections on the substrate do not overlap, and the first light-shielding pattern is arranged corresponding to the plurality of openings, thereby reducing the stress of the original unpatterned multi-layer organic layer, so as to achieve the effect of stress dispersion, thereby avoiding this embodiment. The sensing device has a problem of warpage due to the multi-layer structure.

3 is a schematic cross-sectional view of an electronic device according to an embodiment of the present invention.

Please refer to FIG. 3 , which shows an electronic device 10 . In some embodiments, the electronic device 10 may be an off-screen fingerprint recognition device, such as an electronic device such as a smart phone, a tablet computer, a notebook computer, or a touch-sensitive display device. The electronic device 10 of this embodiment includes, for example, a display panel 1000 and a sensing device 100 , wherein the display panel 1000 and the sensing device 100 can be bonded by a sealant FG, but the invention is not limited thereto. The display panel 1000 is, for example, suitable for providing the illumination light beam L1 to the finger F through the light emitting structure LE it has, and then reflects the sensing light beam L2 therethrough. In this embodiment, the display panel 1000 is an organic light-emitting diode (organic light-emitting diode; OLED) display panel, but the invention is not limited to this. In other embodiments, the display panel 1000 can also be a liquid crystal display panel or other suitable display panels. For example, the sensing device 100 is disposed below the display panel 1000 to receive the sensing light beam L2 reflected by the finger F, thereby performing fingerprint recognition.

To sum up, in the sensing device of the present invention, at least two organic layers are provided with a plurality of openings including longitudinal openings and lateral openings, wherein the longitudinal openings (and lateral openings) of adjacent organic layers are along the substrate. The projections of the normal direction of the substrate on the substrate do not overlap, and the first light-shielding pattern is arranged corresponding to a plurality of openings, thereby reducing the stress of the original unpatterned multilayer organic layer, so as to achieve the effect of stress dispersion, thereby The problem of warpage caused by the multi-layer structure of the sensing device of the present invention is avoided. Furthermore, the sensing device of the present invention is also provided with a light-shielding pattern stacked by color resists in the corresponding regions of the above-mentioned openings. In addition to the convenience of the process, it can also be used to shield the light from a large angle from the outside (for example, Oblique light) and avoid the phenomenon of light leakage, and improve the signal-to-noise ratio of light to obtain a clearer image.

10: Electronics 100, 200: Sensing device 1000: Display panel n: normal direction A1-A1', A2-A2': section line BM1, BM2, BM3, BM4: Shading pattern BP1, BP2: inorganic layer F: finger FG: Sealant FL: filter layer GL: Intergate insulating layer L1: Lighting beam L2: Sensing beam LE: Light Emitting Structure LR1, LR2, LR3: Light passing area ML: Micro lens O, OP1, OP2: Opening OP11, OP21: longitudinal opening OP12, OP22: Lateral opening PL1, PL2, PL3, PL4, PL5: organic layer SB: Substrate SC: Sensing element SC1: first electrode SC2: photosensitive layer SC3: Second electrode SE: Sensing Structure Layer

FIG. 1A is a schematic top view of the sensing device according to the first embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the sensing device according to the line A1-A1' of FIG. 1A . 2A is a schematic top view of a sensing device according to a second embodiment of the present invention. FIG. 2B is a schematic cross-sectional view of the sensing device according to the line A2-A2' of FIG. 2A . 3 is a schematic cross-sectional view of an electronic device according to an embodiment of the present invention.

100: Sensing device

n: normal direction

A1-A1': section line

BM1, BM2, BM3, BM4: Shading pattern

BP1, BP2: inorganic layer

FL: filter layer

GL: Intergate insulating layer

LR1, LR2, LR3: Light passing area

ML: Micro lens

O, OP1, OP2: Opening

PL1, PL2, PL3, PL4, PL5: organic layer

SB: Substrate

SC: Sensing element

SC1: first electrode

SC2: photosensitive layer

SC3: Second electrode

SE: Sensing Structure Layer

Claims (8)

A sensing device, comprising: a sensing structure layer, located on the substrate, including a plurality of sensing elements; a first insulating layer located on the sensing structure layer and having a first opening, wherein the first opening includes a first longitudinal opening and a first lateral opening; a second insulating layer, located on the first insulating layer and having a second opening, wherein the second opening includes a second longitudinal opening and a second lateral opening; a first light-shielding pattern, located on the sensing structure layer and corresponding to the first opening and the second opening, wherein the first light-shielding pattern includes a color resist stack; a second light-shielding pattern on the second insulating layer and defining a light-passing area; and a plurality of microlenses located in the light passing area, The projections of the first longitudinal opening and the second longitudinal opening on the substrate along the normal direction of the substrate do not overlap, and the first lateral opening and the second lateral opening are along the substrate The projections of the normal direction of , on the substrate do not overlap. The sensing device of claim 1, wherein the first light shielding pattern is formed in the first opening and the second opening. The sensing device of claim 1, wherein a part of the first light shielding pattern is formed in the first opening, and a part of the second insulating layer is formed in the second opening. The sensing device of claim 1, wherein the first opening and the second opening do not overlap with projections of the plurality of sensing elements on the substrate along a normal direction of the substrate. The sensing device of claim 1, wherein the color resist stack has a transmittance of less than 30%. The sensing device of claim 1, wherein the color resist stack includes a first color resist and a second color resist stacked on each other, wherein the first color resist and the second color resist have different color. The sensing device of claim 1, wherein the color resist stack includes a first color resist, a second color resist, and a third color resist stacked on each other, wherein the first color resist, the second color resist and the third color resistance has a different color. The sensing device of claim 1, further comprising: a third insulating layer, located between the sensing structure layer and the first insulating layer; a third shading pattern, located on the third insulating layer; a fourth insulating layer, located on the third insulating layer and covering the third light shielding pattern; a fourth light shielding pattern on the fourth insulating layer; and The filter layer is located on the fourth insulating layer and covers the fourth light shielding pattern.

Images