TWI869575B - Method for producing sheet for producing semiconductor device - Google Patents

Abstract

The present invention provides a method for manufacturing a semiconductor device manufacturing sheet. The semiconductor device manufacturing sheet is sequentially laminated with a substrate, an adhesive layer, an intermediate layer, a film adhesive and a second peeling film, and the method comprises: a first processing step, for a second intermediate laminate body having the intermediate layer, the film adhesive and the first peeling film, removing at least a portion of the intermediate layer and the film adhesive to obtain a second intermediate laminate body processed product; a lamination step, The first intermediate laminate body and the adhesive layer are laminated with the second intermediate laminate body to obtain the first laminate; the first peeling film of the first laminate is peeled off and the second peeling film is laminated to obtain the second laminate; and the second processing step is to remove at least a part of the substrate and the adhesive layer of the second laminate to obtain a semiconductor device manufacturing sheet; and the peeling force between the first peeling film and the film-like adhesive is higher than the peeling force between the second peeling film and the film-like adhesive.

Description

Method for producing sheet for producing semiconductor device

The present invention relates to a method for manufacturing a semiconductor device manufacturing sheet. This application is based on and claims priority to Japanese Patent Application No. 2020-058734 filed in Japan on March 27, 2020, and the contents of the application are cited herein.

When manufacturing a semiconductor device, a semiconductor chip with a film adhesive is used. The semiconductor chip with a film adhesive has a semiconductor chip and a film adhesive disposed on the inner surface of the semiconductor chip. As an example of a method for manufacturing a semiconductor chip with a film adhesive, the method shown below can be cited.

First, a dicing die-bonding sheet is attached to the inner surface of the semiconductor wafer. As a dicing die-bonding sheet, for example, there are those having a support sheet and a film-like adhesive provided on the surface of the support sheet. The support sheet can be used as a dicing sheet. As a support sheet, there are many types of support sheets with different structures, such as those having a base material and an adhesive layer provided on the surface of the base material, and those consisting only of a base material. The support sheet having an adhesive layer is a support sheet in which the outermost surface of the adhesive layer side is the surface on which the film-like adhesive is provided. The dicing die-bonding sheet is attached to the inner surface of the semiconductor wafer by the film-like adhesive in the dicing die-bonding sheet.

Then, the semiconductor wafer and the film adhesive on the support sheet are cut together by a blade. The "cutting" of the semiconductor wafer is also called "slicing", and the semiconductor wafer is singulated into target semiconductor chips. The film adhesive is cut along the periphery of the semiconductor chip. In this way, a semiconductor chip with a film-like adhesive can be obtained, and a semiconductor chip group with a film-like adhesive can be obtained. The above-mentioned semiconductor chip with a film-like adhesive is a semiconductor chip and a cut film-like adhesive arranged on the inner surface of the semiconductor chip. The above-mentioned semiconductor chip group with a film-like adhesive has a plurality of these semiconductor chips with a film-like adhesive maintained in an orderly arranged state on a support sheet.

Next, the semiconductor chip with the film adhesive is pulled off the support sheet and picked up. When a support sheet with a curable adhesive layer is used, the adhesive layer is hardened to reduce the adhesiveness, making it easier to pick up. Through the above operation, a semiconductor chip with a film adhesive for manufacturing a semiconductor device is obtained.

As another example of a method for manufacturing a semiconductor chip with a film-like adhesive, the method shown below can be cited. First, a back grinding tape (sometimes also called a "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer. Then, a predetermined division position is set inside the semiconductor wafer, and the area contained in the position is used as a focus, and laser light is irradiated in a manner focused on the focus, thereby forming a modified layer inside the semiconductor wafer. Next, the inner surface of the semiconductor wafer is ground using a grinder, thereby adjusting the thickness of the semiconductor wafer to a target value. By utilizing the force applied to the semiconductor wafer during grinding at this time, the semiconductor wafer is divided (singulated) at the formation position of the modified layer to produce a plurality of semiconductor chips. The semiconductor wafer separation method accompanied by the formation of the modified layer is called stealth dicing (registered trademark), which is fundamentally different from laser dicing, which irradiates the semiconductor wafer with laser light to cut off the irradiated part while gradually cutting the semiconductor wafer from the surface.

Furthermore, a piece of adhesive wafer is attached to the inner surface (in other words, the grinding surface) of all the semiconductor wafers fixed on the back grinding tape that have been ground as described above. As the adhesive wafer, the same as the above-mentioned dicing adhesive wafer can be cited. The adhesive wafer is not used when dicing the semiconductor wafer as described above, and sometimes it can be designed to have the same structure as the dicing adhesive wafer. The adhesive wafer is also attached to the inner surface of the semiconductor wafer by the film adhesive in the adhesive wafer.

Then, after removing the back grinding tape from the semiconductor chip, the adhesive chip is cooled on one side and stretched (cold-expanded) in a direction parallel to the surface of the adhesive chip (e.g., the surface where the film adhesive is attached to the semiconductor chip), thereby cutting the film adhesive along the periphery of the semiconductor chip. Through the above operation, a semiconductor chip with a film adhesive is obtained, which has a semiconductor chip and a cut film adhesive disposed on the inner surface of the semiconductor chip.

Then, similarly to the above-mentioned case of cutting with a blade, the semiconductor wafer with a film-like adhesive is pulled off the support sheet and picked up, thereby obtaining a semiconductor wafer with a film-like adhesive for manufacturing a semiconductor device.

Both the dicing wafer and the adhesive wafer can be used to manufacture semiconductor wafers with film adhesives, and finally can manufacture target semiconductor devices. In this specification, both the dicing wafer and the adhesive wafer are referred to as "sheets for manufacturing semiconductor devices".

As a sheet for manufacturing semiconductor devices, for example, a dicing adhesive tape (equivalent to the aforementioned dicing adhesive wafer) is disclosed, which has a structure in which a base layer (equivalent to the aforementioned support sheet) and an adhesive layer (equivalent to the aforementioned film-like adhesive) are directly in contact and laminated (see Patent Document 1). In the dicing adhesive tape, the 90-degree peeling force of the base layer and the adhesive layer at -15°C is adjusted to a specific range, so it is considered that the adhesive layer can be separated with high precision by expansion. In addition, the 90-degree peeling force of the substrate layer and the adhesive layer at 23°C is adjusted to a specific range, so it can be considered that when the dicing tape is used, a semiconductor chip with an adhesive layer (equivalent to the aforementioned semiconductor chip with a film adhesive) can be picked up without difficulty, and in the process until picking up, the semiconductor wafer and the semiconductor chip can be suppressed from peeling off the adhesive layer. [Prior art literature] [Patent literature]

[Patent Document 1] Japanese Patent Application Publication No. 2018-56289.

[The problem that the invention wants to solve]

However, in the manufacture of the dicing die-bonding tape disclosed in Patent Document 1, the film-forming property of the adhesive layer (equivalent to a film-like adhesive) has not been studied.

The purpose of the present invention is to provide a method for manufacturing a semiconductor device manufacturing sheet, which is easy to form a film of a film adhesive and can manufacture a semiconductor device manufacturing sheet with excellent suitability for a mounting process when used. [Means for solving the problem]

(1) A method for manufacturing a semiconductor device manufacturing sheet, wherein the semiconductor device manufacturing sheet comprises a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a second peeling film, and is formed by laminating the substrate, the adhesive layer, the intermediate layer, the film-like adhesive, and the second peeling film in sequence; and the method for manufacturing the semiconductor device manufacturing sheet comprises: a first processing step of processing the semiconductor device manufacturing sheet comprising the intermediate layer, the film-like adhesive, and the second peeling film; The aforementioned intermediate layer and the aforementioned film-like adhesive of the second intermediate laminate body of the film-like adhesive and the first peeling film are formed with a cut-in portion C at a position corresponding to the outer periphery of the aforementioned intermediate layer and the aforementioned film-like adhesive of the semiconductor device manufacturing sheet, and at least a portion of the aforementioned intermediate layer and the aforementioned film-like adhesive located on the outer side is removed from the cut-in portion C as a starting point to obtain a second intermediate laminate body processed product; the lamination step is to have the aforementioned substrate and the aforementioned The first intermediate layer body of the adhesive layer is bonded to the second intermediate layer body workpiece to obtain a first layer body having the substrate, the adhesive layer, the intermediate layer, the film-shaped adhesive and the first peeling film; a re-bonding step is performed to peel off the first peeling film of the first layer body and to bond the second peeling film to obtain a second layer body; and a second processing step is performed to bond the substrate and the second layer body of the second layer body The adhesive layer forms a cut-in portion C' at a position corresponding to the periphery of the aforementioned substrate and the aforementioned adhesive layer of the semiconductor device manufacturing sheet, and removes at least a portion of the aforementioned substrate and the aforementioned adhesive layer located on the outer side from the cut-in portion C' to obtain the semiconductor device manufacturing sheet; and the peeling force between the aforementioned first peeling film and the aforementioned film-like adhesive is higher than the peeling force between the aforementioned second peeling film and the aforementioned film-like adhesive. (2) A method for producing a semiconductor device manufacturing sheet as described in (1) above, wherein an adhesive composition is applied to the peeling treatment surface of the first peeling film and dried to form a single-layer adhesive layer with a thickness of 10 μm to obtain a first test sheet, wherein the adhesive composition is composed of 100 parts by weight of an acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) in terms of solid content and a crosslinking agent ("BXX" manufactured by Toyo-Chem) in terms of solid content. 5640”) 1 mass part, with respect to the aforementioned first test piece, under the conditions of a peeling speed of 1000 mm/min, 23° C., and a humidity of 50% RH, the aforementioned adhesive layer of the aforementioned first test piece and the peeling treatment surface of the aforementioned first peeling film are at an angle of 180° to each other, and a 180° peeling process is performed from the aforementioned adhesive layer to the aforementioned first peeling film, thereby measuring the aforementioned adhesive layer and the aforementioned first peeling film. The peeling force (mN/50mm) between the first and second peeling films exceeded 180mN/50mm; an adhesive composition was applied to the peeling treatment surface of the second peeling film and dried to form a single layer of adhesive layer with a thickness of 10μm to obtain a second test piece. The adhesive composition here was composed of an acrylic resin ("Oribain" manufactured by Toyo-Chem) in terms of solids. The second test piece is composed of 100 parts by weight of a crosslinking agent ("BPS 6367X") and 1 part by weight of a crosslinking agent ("BXX 5640" manufactured by Toyo-Chem). With respect to the second test piece, the peeling speed is 1000 mm/min, 23°C, and the humidity is 50% RH. The peeling treatment surfaces of the adhesive layer and the second peeling film of the second test piece are at an angle of 180° to each other. The peeling force (mN/50mm) between the adhesive layer and the second peeling film is measured to be less than 180mN/50mm. (3) A method for producing a semiconductor device manufacturing sheet as described in (1) or (2) above, wherein the intermediate layer contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component. [Effect of the invention]

According to this aspect, a method for manufacturing a semiconductor device manufacturing sheet can be provided, which is easy to form a film of a film-like adhesive and can manufacture a semiconductor device manufacturing sheet that has excellent suitability for a mounting process when used.

◇Sheet for manufacturing semiconductor devices The sheet for manufacturing semiconductor devices in one embodiment of the present invention comprises a substrate, an adhesive layer, an intermediate layer, a film adhesive and a release film, and is composed of the aforementioned substrate, adhesive layer, intermediate layer, film adhesive and the aforementioned release film stacked in sequence. The aforementioned intermediate layer preferably contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component.

When the semiconductor device manufacturing sheet of the present embodiment is used as a dicing wafer for blade dicing, since the semiconductor device manufacturing sheet has the intermediate layer, it is easy to prevent the blade from reaching the substrate, and the generation of whisker-like cutting chips (also known as whiskers, hereinafter not limited to those originating from the substrate, sometimes referred to as "cutting chips") from the substrate can be suppressed. In addition, the main component of the intermediate layer cut by the blade can be suppressed from the generation of the aforementioned cutting chips from the intermediate layer by using a non-silicon resin with a weight average molecular weight of 100,000 or less, especially a weight average molecular weight of 100,000 or less.

On the other hand, when the semiconductor device manufacturing sheet of the present embodiment is used as a bonding chip to perform dicing (invisible dicing (registered trademark)) accompanying the formation of a modified layer in a semiconductor wafer, since the semiconductor device manufacturing sheet has the intermediate layer, the film adhesive can be cut with high precision at the target location by subsequently stretching the semiconductor device manufacturing sheet in a direction parallel to the surface of the semiconductor device manufacturing sheet (e.g., the surface where the film adhesive is attached to the semiconductor chip), thereby suppressing poor cutting. It is believed that the reason is that by having the intermediate layer, the expanded stress can be efficiently used to expand the distance between chips.

Thus, the semiconductor device manufacturing sheet of this embodiment can suppress the generation of cutting chips from the substrate and the intermediate layer during blade cutting, can suppress the poor cutting of the film adhesive during the aforementioned expansion, has the characteristic of suppressing the generation of defects when splitting semiconductor wafers, and has excellent suitability for splitting semiconductor wafers.

In this specification, the "weight average molecular weight" is a polystyrene-equivalent value measured by gel permeation chromatography (GPC) unless otherwise specified.

The manufacturing method and use method of the semiconductor device manufacturing sheet of this embodiment will be described in detail below.

Hereinafter, the semiconductor device manufacturing sheet of the present embodiment will be described in detail with reference to the drawings. In addition, the drawings used in the following description sometimes enlarge the main parts for the sake of convenience in order to facilitate the understanding of the features of the embodiment, and the size ratios of the components may not be the same as the actual ones.

FIG. 1 is a schematic cross-sectional view of a semiconductor device manufacturing sheet according to an embodiment of the present invention, and FIG. 2 is a plan view of the semiconductor device manufacturing sheet shown in FIG. In addition, in the figures after FIG. 2, the same symbols as those in the already described figures are marked for the same components as those in the already described figures, and detailed descriptions are omitted.

The semiconductor device manufacturing sheet 101 shown here has a substrate 11, and is composed of an adhesive layer 12, an intermediate layer 13, and a film adhesive 14 stacked in order on the substrate 11. The semiconductor device manufacturing sheet 101 further has a release film 15 on a surface 14a of the film adhesive 14 that is opposite to the side on which the intermediate layer 13 is provided (hereinafter referred to as the "first surface") 14a.

In the semiconductor device manufacturing sheet 101, an adhesive layer 12 is provided on one side (sometimes referred to as "first side" in this specification) 11a of a substrate 11. An intermediate layer 13 is provided on a side (sometimes referred to as "first side" in this specification) 12a of the adhesive layer 12 opposite to the side on which the substrate 11 is provided. A film-like adhesive 14 is provided on a side (sometimes referred to as "first side" in this specification) 13a of the intermediate layer 13 opposite to the side on which the adhesive layer 12 is provided. A release film 15 is provided on the first side 14a of the film-like adhesive 14. In this way, the semiconductor device manufacturing sheet 101 is formed by laminating the base material 11, the adhesive layer 12, the intermediate layer 13, the film adhesive 14, and the peeling film 15 in this order in the thickness direction.

The semiconductor device manufacturing sheet 101 is used by attaching the first surface 14a of the film adhesive 14 in the semiconductor device manufacturing sheet 101 to the inner surface of a semiconductor wafer, a semiconductor chip or an incompletely divided semiconductor wafer (not shown) with the release film 15 removed.

In this specification, in any case of a semiconductor wafer or a semiconductor chip, the surface on the side where a circuit is formed is called a "circuit forming surface", and the surface opposite to the circuit forming surface is called an "inner surface".

In this specification, a laminate having a structure in which a substrate and an adhesive layer are laminated in the thickness direction of these layers and an intermediate layer is not laminated is sometimes referred to as a "support sheet". In FIG1 , reference numeral 1 indicates a support sheet. In addition, a laminate having a structure in which a substrate, an adhesive layer and an intermediate layer are laminated in this order in the thickness direction of these layers is sometimes referred to as a "laminated sheet". In FIG1 , reference numeral 10 indicates a laminated sheet. The laminate having the aforementioned support sheet and intermediate layer is included in the aforementioned laminated sheet.

The plane shapes of the intermediate layer 13 and the film adhesive 14 when viewed from above these layers are both circular, and the diameter of the intermediate layer 13 is the same as the diameter of the film adhesive 14. In addition, in the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film adhesive 14 are arranged in a manner that the centers are aligned, in other words, the positions of the outer peripheries of the intermediate layer 13 and the film adhesive 14 are aligned in the radial direction.

The first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 are both smaller in area than the first surface 12a of the adhesive layer 12. Moreover, the maximum value of the width _W13 (i.e., the diameter) of the intermediate layer 13 and the maximum value of the width _W14 (i.e., the diameter) of the film-like adhesive 14 are both smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the substrate 11. Therefore, in the semiconductor device manufacturing sheet 101, a portion of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. The peeling film 15 is deposited on the area of the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not deposited, and the area is exposed when the peeling film 15 is removed (hereinafter, the area is sometimes referred to as a "non-deposited area" in this specification). Furthermore, in the semiconductor device manufacturing sheet 101 having the peeling film 15, the area of the adhesive layer 12 that is not covered by the intermediate layer 13 and the film-like adhesive 14 may or may not have an area where the peeling film 15 is not deposited, as shown here.

The semiconductor device manufacturing sheet 101 in a state where the film adhesive 14 is not cut and is attached to the semiconductor wafer or semiconductor chip by the film adhesive 14 can be fixed by attaching a portion of the non-laminated area in the adhesive layer 12 in the semiconductor device manufacturing sheet 101 to a jig such as a ring frame for fixing the semiconductor wafer. Therefore, it is not necessary to separately provide a jig adhesive layer on the semiconductor device manufacturing sheet 101 for fixing the semiconductor device manufacturing sheet 101 to the jig. In addition, since it is not necessary to provide a jig adhesive layer, the semiconductor device manufacturing sheet 101 can be manufactured inexpensively and efficiently.

Thus, the semiconductor device manufacturing sheet 101 has an advantageous effect by not having a jig adhesive layer, but may have a jig adhesive layer. In this case, the jig adhesive layer is provided in an area near the peripheral portion of the surface of any layer constituting the semiconductor device manufacturing sheet 101. Examples of such an area include the non-laminated area described above in the first surface 12a of the adhesive layer 12.

The jig adhesive layer may be a known one, and may be, for example, a single-layer structure containing an adhesive component, or a multi-layer structure in which layers containing an adhesive component are laminated on both sides of a sheet serving as a core material.

In addition, when the semiconductor device manufacturing sheet 101 is stretched (so-called expanded) in a direction parallel to the surface of the semiconductor device manufacturing sheet 101 (e.g., the first surface 12a of the adhesive layer 12) as described later, the semiconductor device manufacturing sheet 101 can be easily expanded by the presence of the non-laminated region on the first surface 12a of the adhesive layer 12. In addition, not only can the film adhesive 14 be easily cut, but also the peeling of the intermediate layer 13 and the film adhesive 14 from the adhesive layer 12 can be suppressed.

The first surface 12a of the adhesive layer 12 of the support sheet 1 and the first surface 11a of the substrate 11 are both smaller in area than the first surface 15a of the release film 15. Furthermore, the maximum value of the width (i.e., diameter) of the adhesive layer 12 and the maximum value of the width (i.e., diameter) of the substrate 11 are both smaller than the maximum value of the width of the release film 15. Therefore, in the semiconductor device manufacturing sheet 101, a portion of the release film 15 is not covered by the adhesive layer 12 and the substrate 11.

The planar shapes of the adhesive layer 12 and the substrate 11 when viewed from above these layers are both circular, and the diameters of the adhesive layer 12 and the substrate 11 are the same. In addition, in the semiconductor device manufacturing sheet 101, the adhesive layer 12 and the substrate 11 are arranged in a manner such that the centers are aligned, in other words, the positions of the peripheries of the adhesive layer 12 and the substrate 11 are aligned in the radial direction.

In the semiconductor device manufacturing sheet 101, the intermediate layer 13 preferably contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component.

The semiconductor device manufacturing sheet of this embodiment is not limited to those shown in FIG. 1 and FIG. 2 , and a part of the structure shown in FIG. 1 and FIG. 2 may be changed, deleted, or added within the scope of not impairing the effect of the present invention.

For example, the semiconductor device manufacturing sheet of the present embodiment may also have other layers that are not equivalent to any of the substrate, adhesive layer, intermediate layer, film adhesive, peeling film, and jig adhesive layer. However, the semiconductor device manufacturing sheet of the present embodiment preferably has an adhesive layer in direct contact with the substrate, an intermediate layer in direct contact with the adhesive layer, a film adhesive in direct contact with the intermediate layer, and a peeling film in direct contact with the film adhesive as shown in FIG. 1 .

For example, in the semiconductor device manufacturing sheet of this embodiment, the plane shape of the intermediate layer and the film adhesive may be a shape other than a circular shape, and the plane shapes of the intermediate layer and the film adhesive may be the same or different. In addition, the area of the first surface of the intermediate layer and the area of the first surface of the film adhesive are preferably smaller than the area of the surface of the layer closer to the substrate side (such as the first surface of the adhesive layer), and may be the same or different. Moreover, the positions of the outer periphery of the intermediate layer and the film adhesive may be consistent in the radial direction or inconsistent. Next, each layer constituting the semiconductor device manufacturing sheet of this embodiment is described in detail.

○Base material The aforementioned base material is in the form of a sheet or a film. The constituent material of the aforementioned substrate is preferably various resins, specifically, for example, polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE, etc.)), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene butylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyacrylic urethane, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-(meth)acrylic acid copolymer and ethylene copolymer other than ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated products, modified products, crosslinked products or copolymers of any of these resins, etc.

Furthermore, in this specification, the term "(meth)acrylic acid" refers to a concept that includes both "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth)acrylic acid, for example, the term "(meth)acrylate" refers to a concept that includes both "acrylate" and "methacrylate", and the term "(meth)acryl" refers to a concept that includes both "acryl" and "methacryl".

The resin constituting the substrate may be only one type or two or more types. When there are two or more types, the combination and ratio of these resins can be arbitrarily selected.

The substrate may be composed of only one layer (single layer) or may be composed of two or more layers. When the substrate is composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as it does not impair the efficacy of the present invention. In this specification, not limited to the case of the substrate, the so-called "multiple layers may be the same or different from each other" means "all layers may be the same, all layers may be different, or only some layers may be different", and further, the so-called "multiple layers are different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other".

The thickness of the substrate can be appropriately selected according to the purpose, preferably 50μm to 300μm, more preferably 60μm to 150μm. When the thickness of the substrate is above the aforementioned lower limit, the structure of the substrate becomes more stable. When the thickness of the substrate is below the aforementioned upper limit, the film adhesive can be cut more easily during blade cutting and the aforementioned expansion of the semiconductor device manufacturing sheet. Here, the so-called "thickness of the substrate" means the thickness of the substrate as a whole, for example, the thickness of a substrate composed of multiple layers means the total thickness of all layers constituting the substrate. In this specification, "thickness" is expressed as a value obtained by measuring thickness at five randomly selected locations and averaging the values, and is obtained using a constant pressure thickness gauge in accordance with JIS (Japanese Industrial Standards) K7130, unless otherwise specified.

The substrate may also be subjected to the following treatments on the surface in order to improve the adhesion with other layers such as the adhesive layer provided on the substrate: convexo-concave treatment by spraying treatment, solvent treatment, embossing treatment, etc.; oxidation treatment such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone-ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc. In addition, the surface of the substrate may also be subjected to primer treatment. In addition, the substrate may also have the following layers: antistatic coating; a layer to prevent the substrate from being attached to other sheets or to the adsorption platform when the adhesive wafer is stacked and stored.

In addition to the aforementioned resin and other main constituent materials, the substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.

The optical properties of the substrate are not particularly limited within the scope that does not impair the efficacy of the present invention. For example, the substrate can also allow laser light or energy rays to pass through.

The substrate can be manufactured by a known method. For example, a substrate containing a resin (using a resin as a constituent material) can be manufactured by molding the aforementioned resin or a resin composition containing the aforementioned resin.

○ Adhesive layer The adhesive layer is in the form of a sheet or a film and contains an adhesive. The adhesive layer can be formed using an adhesive composition containing the adhesive. For example, the adhesive composition is applied to the surface to be formed on the adhesive layer, and dried as needed, thereby forming the adhesive layer on the target site.

The adhesive composition can be applied by a known method, for example, a method using various coating machines such as an air knife coater, a blade coater, a rod coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, a doctor blade coater, a screen coater, a Mayer rod coater, and a light touch coater.

The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, heat drying is preferred. In this case, for example, drying is preferably performed at 70° C. to 130° C. for 10 seconds to 5 minutes.

Examples of the adhesive include adhesive resins such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, and ester resin, and acrylic resin is preferred.

Furthermore, in this specification, "adhesive resin" includes both resins having adhesive properties and resins having adhesive properties. For example, the aforementioned adhesive resins include not only resins having adhesive properties themselves, but also resins that exhibit adhesive properties by being used in combination with other components such as additives, or resins that exhibit adhesive properties by the presence of triggers such as heat or water.

The adhesive layer may be either hardening or non-hardening, for example, it may be either energy ray hardening or non-energy ray hardening. The hardening adhesive layer can easily adjust the physical properties before and after hardening.

In this specification, the term "energy ray" means an electromagnetic wave or charged particle beam that has energy quanta. Examples of energy ray include ultraviolet rays, radiation, electron beams, etc. Ultraviolet rays can be irradiated by using a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, or an LED (Light Emitting Diode) lamp as an ultraviolet ray source. Electron beams can be irradiated by electron beam accelerators, etc. In addition, in this specification, the term "energy ray curability" means the property of curing by irradiation with energy rays, and the term "non-energy ray curability" means the property of not curing even if irradiated with energy rays.

The adhesive layer may consist of only one layer (single layer) or may consist of two or more layers. When the adhesive layer consists of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

The thickness of the adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, and particularly preferably 1 μm to 30 μm. Here, the so-called "thickness of the adhesive layer" means the thickness of the adhesive layer as a whole. For example, the so-called thickness of an adhesive layer composed of multiple layers means the total thickness of all layers constituting the adhesive layer.

The substrate and the adhesive layer may have the same shape, but preferably the substrate and the adhesive layer are laminated so that the peripheries of the shapes in plan view are consistent.

The optical properties of the adhesive layer are not particularly limited within the scope that does not impair the efficacy of the present invention. For example, the adhesive layer can also allow energy rays to penetrate. Next, the above-mentioned adhesive composition is explained. The following adhesive composition can contain one or more of the following components in a manner where the total content (mass %) does not exceed 100 mass %.

[Adhesive composition] When the adhesive layer is energy ray-curable, the adhesive composition containing the energy ray-curable adhesive, i.e., the energy ray-curable adhesive composition, may include, for example, the following adhesive compositions: Adhesive composition (I-1) containing a non-energy ray-curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-1a)"), and an energy ray-curable adhesive resin (I-1a). energy ray-hardening compound; an adhesive composition (I-2) comprising an energy ray-hardening adhesive resin (I-2a) having an unsaturated group introduced into the side chain of a non-energy ray-hardening adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-2a)"); and an adhesive composition (I-3) comprising the aforementioned adhesive resin (I-2a) and the energy ray-hardening compound.

[Adhesive composition (I-1)] As described above, the adhesive composition (I-1) contains a non-energy ray-curable adhesive resin (I-1a) and an energy ray-curable compound.

[Adhesive resin (I-1a)] The adhesive resin (I-1a) is preferably an acrylic resin. Examples of the acrylic resin include acrylic polymers having at least one constituent unit derived from an alkyl (meth)acrylate. The acrylic resin may have only one constituent unit or two or more constituent units. In the case of two or more constituent units, the combination and ratio of these constituent units may be arbitrarily selected.

The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these adhesive resins (I-1a) may be arbitrarily selected.

In the adhesive composition (I-1), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-1) is preferably 5 mass % to 99 mass %, more preferably 10 mass % to 95 mass %, and even more preferably 15 mass % to 90 mass %.

[Energy ray-hardening compound] As the aforementioned energy ray-hardening compound contained in the adhesive composition (I-1), there can be listed: monomers or oligomers having energy ray-polymerizable unsaturated groups and capable of being hardened by irradiation with energy rays. Among the energy ray-hardening compounds, as monomers, for example, there can be listed: poly(meth)acrylates such as trihydroxymethylpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; (meth)acrylic acid urethane; polyester (meth)acrylate; polyether (meth)acrylate; epoxy (meth)acrylate, etc. Among the energy ray-hardening compounds, as oligomers, for example, oligomers obtained by polymerizing the monomers exemplified above, etc. can be listed. The energy ray-curable compound is preferably (meth) acrylate urethane or (meth) acrylate oligomer because it has a relatively large molecular weight and is less likely to reduce the storage elastic modulus of the adhesive layer.

The adhesive composition (I-1) may contain only one kind of the energy ray-curable compound mentioned above, or may contain two or more kinds. When it contains two or more kinds, the combination and ratio of these energy ray-curable compounds may be arbitrarily selected.

In the adhesive composition (I-1), the content of the energy ray-hardening compound relative to the total mass of the adhesive composition (I-1) is preferably 1 mass % to 95 mass %, more preferably 5 mass % to 90 mass %, and even more preferably 10 mass % to 85 mass %.

[Crosslinking Agent] When the acrylic polymer having a constituent unit derived from a functional group-containing monomer in addition to a constituent unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-1) preferably further contains a crosslinking agent.

The crosslinking agent reacts with the functional group to crosslink the adhesive resins (I-1a). As crosslinking agents, for example, there can be listed: isocyanate crosslinking agents (crosslinking agents having isocyanate groups) such as toluene diisocyanate, hexamethylene diisocyanate, xylene diisocyanate, and adducts of these diisocyanates; epoxy crosslinking agents (crosslinking agents having glycidyl groups) such as ethylene glycol glycidyl ether; aziridine crosslinking agents (crosslinking agents having aziridine groups) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate crosslinking agents (crosslinking agents having metal chelate structures) such as aluminum chelates; isocyanurate crosslinking agents (crosslinking agents having isocyanuric acid skeletons), etc. From the viewpoints of increasing the cohesive force of the adhesive and thus the adhesion of the adhesive layer, and being easy to obtain, the crosslinking agent is preferably an isocyanate crosslinking agent.

The adhesive composition (I-1) may contain only one type of crosslinking agent or two or more types of crosslinking agents. When there are two or more types of crosslinking agents, the combination and ratio of these crosslinking agents may be arbitrarily selected.

When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[Photopolymerization initiator] The adhesive composition (I-1) may further contain a photopolymerization initiator. The adhesive composition (I-1) containing the photopolymerization initiator fully undergoes a curing reaction even when irradiated with relatively low energy such as ultraviolet rays.

Examples of the photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, benzoin dimethyl ketal and other benzoin compounds; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one; bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, 2,4,6-trimethylbenzyldiphenylphosphine oxide; acyl phosphine oxide compounds; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanone compounds such as thiothione; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4-diethylthiothione; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; 2-chloroanthraquinone, etc. In addition, as the aforementioned photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, etc. can also be used.

The adhesive composition (I-1) may contain only one type of photopolymerization initiator or two or more types of photopolymerization initiators. When there are two or more types of photopolymerization initiators, the combination and ratio of these photopolymerization initiators may be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[Other additives] The adhesive composition (I-1) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope that does not impair the efficacy of the present invention. As the above-mentioned other additives, for example, there can be listed: antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rustproofing agents, colorants (pigments, dyes), sensitizers, thickeners, reaction delay agents, crosslinking promoters (catalysts) and other well-known additives.

Furthermore, the so-called reaction retarder is, for example, a component for inhibiting the unintended cross-linking reaction in the adhesive composition (I-1) during storage due to the action of the catalyst mixed into the adhesive composition (I-1). Examples of the reaction retarder include those that form a chelate complex by chelating the catalyst, and more specifically, those that have two or more carbonyl groups (-C(=O)-) in one molecule.

The adhesive composition (I-1) may contain only one type of other additives or two or more types of other additives. When there are two or more types of other additives, the combination and ratio of these other additives may be arbitrarily selected.

The content of other additives in the adhesive composition (I-1) is not particularly limited and can be appropriately selected according to the type.

[Solvent] The adhesive composition (I-1) may also contain a solvent. By containing a solvent, the adhesive composition (I-1) has improved application suitability to the surface to which it is applied.

The aforementioned solvent is preferably an organic solvent.

[Adhesive composition (I-2)] As described above, the adhesive composition (I-2) contains an energy ray-curable adhesive resin (I-2a) having an unsaturated group introduced into the side chain of a non-energy ray-curable adhesive resin (I-1a).

[Adhesive resin (I-2a)] The aforementioned adhesive resin (I-2a) is obtained, for example, by reacting an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

The aforementioned unsaturated group-containing compound is a compound having, in addition to the aforementioned energy-ray-polymerizable unsaturated group, a group capable of bonding to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a). As the aforementioned energy-ray-polymerizable unsaturated group, for example, (meth)acryloyl, ethenyl, allyl (2-propenyl), etc., preferably (meth)acryloyl. As the group capable of bonding to the functional group in the adhesive resin (I-1a), for example, an isocyanate group and a glycidyl group capable of bonding to a hydroxyl group or an amine group, and a hydroxyl group and an amine group capable of bonding to a carboxyl group or an epoxide group, etc. can be cited.

Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and (meth)glycidyl acrylate.

The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these adhesive resins (I-2a) may be arbitrarily selected.

In the adhesive composition (I-2), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-2) is preferably 5 mass % to 99 mass %, more preferably 10 mass % to 95 mass %, and even more preferably 10 mass % to 90 mass %.

[Crosslinking agent] For example, when the aforementioned acrylic polymer having constituent units derived from a monomer containing a functional group, which is the same as that in the adhesive resin (I-1a), is used as the adhesive resin (I-2a), the adhesive composition (I-2) may further contain a crosslinking agent.

As the aforementioned crosslinking agent in the adhesive composition (I-2), the same crosslinking agent as that in the adhesive composition (I-1) can be cited. The crosslinking agent contained in the adhesive composition (I-2) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these crosslinking agents can be arbitrarily selected.

When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Photopolymerization initiator] The adhesive composition (I-2) may further contain a photopolymerization initiator. The adhesive composition (I-2) containing the photopolymerization initiator fully undergoes a curing reaction even when irradiated with relatively low energy such as ultraviolet rays.

As the aforementioned photopolymerization initiator in the adhesive composition (I-2), the same ones as the photopolymerization initiator in the adhesive composition (I-1) can be cited. The photopolymerization initiator contained in the adhesive composition (I-2) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Other additives, solvents] The adhesive composition (I-2) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope that does not impair the efficacy of the present invention. In addition, the adhesive composition (I-2) may also contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-2), the same ones as the other additives and solvents in the adhesive composition (I-1) can be listed. The other additives and solvents contained in the adhesive composition (I-2) may be only one or two or more. In the case of two or more, the combination and ratio of these other additives and solvents can be arbitrarily selected. The contents of other additives and solvents in the adhesive composition (I-2) are not particularly limited and can be appropriately selected according to their types.

[Adhesive composition (I-3)] As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray-curable compound.

In the adhesive composition (I-3), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-3) is preferably 5 mass % to 99 mass %, more preferably 10 mass % to 95 mass %, and even more preferably 15 mass % to 90 mass %.

[Energy ray curing compound] As the aforementioned energy ray curing compound contained in the adhesive composition (I-3), there can be listed monomers and oligomers having energy ray polymerizable unsaturated groups and capable of being cured by irradiation with energy rays, and there can be listed the same energy ray curing compounds as those contained in the adhesive composition (I-1). The aforementioned energy ray curing compound contained in the adhesive composition (I-3) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these energy ray curing compounds can be arbitrarily selected.

In the adhesive composition (I-3), the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Photopolymerization initiator] The adhesive composition (I-3) may further contain a photopolymerization initiator. The adhesive composition (I-3) containing the photopolymerization initiator fully undergoes a curing reaction even when irradiated with relatively low energy such as ultraviolet rays.

As the aforementioned photopolymerization initiator in the adhesive composition (I-3), the same ones as the photopolymerization initiator in the adhesive composition (I-1) can be cited. The photopolymerization initiator contained in the adhesive composition (I-3) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the aforementioned energy ray-curable compound.

[Other additives, solvents] The adhesive composition (I-3) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope that does not impair the efficacy of the present invention. In addition, the adhesive composition (I-3) may also contain a solvent for the same purpose as the adhesive composition (I-1). As the aforementioned other additives and solvents in the adhesive composition (I-3), the same ones as the other additives and solvents in the adhesive composition (I-1) can be listed. The other additives and solvents contained in the adhesive composition (I-3) may be only one or two or more. In the case of two or more, the combination and ratio of these other additives and solvents can be arbitrarily selected. The contents of other additives and solvents in the adhesive composition (I-3) are not particularly limited and can be appropriately selected according to their types.

[Adhesive compositions other than adhesive composition (I-1) to adhesive composition (I-3)] So far, adhesive composition (I-1), adhesive composition (I-2) and adhesive composition (I-3) have been mainly described, but the components described as contained in these can also be similarly applied to all adhesive compositions other than these three adhesive compositions (referred to as "adhesive compositions other than adhesive composition (I-1) to adhesive composition (I-3)" in this manual).

As adhesive compositions other than adhesive compositions (I-1) to (I-3), in addition to energy ray-curable adhesive compositions, non-energy ray-curable adhesive compositions can also be listed. As non-energy ray-curable adhesive compositions, for example, adhesive compositions (I-4) containing non-energy ray-curable adhesive resins (I-1a) such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins can be listed, preferably containing acrylic resins.

The adhesive compositions other than the adhesive composition (I-1) to the adhesive composition (I-3) preferably contain one or more crosslinking agents, and the content of the crosslinking agent can be the same as that of the above-mentioned adhesive composition (I-1) and the like.

[Adhesive composition (I-4)] As a preferred adhesive composition (I-4), for example, an adhesive composition containing the aforementioned adhesive resin (I-1a) and a crosslinking agent can be cited.

[Adhesive resin (I-1a)] As the adhesive resin (I-1a) in the adhesive composition (I-4), the same adhesive resin (I-1a) as the adhesive resin (I-1a) in the adhesive composition (I-1) can be cited. The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these adhesive resins (I-1a) can be arbitrarily selected.

In the adhesive composition (I-4), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-4) is preferably 5 mass % to 99 mass %, more preferably 10 mass % to 95 mass %, and even more preferably 15 mass % to 90 mass %.

[Crosslinking agent] When the aforementioned acrylic polymer having a constituent unit derived from a functional group-containing monomer in addition to a constituent unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-4) preferably further contains a crosslinking agent.

As the crosslinking agent in the adhesive composition (I-4), the same crosslinking agent as that in the adhesive composition (I-1) can be cited. The crosslinking agent contained in the adhesive composition (I-4) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these crosslinking agents can be arbitrarily selected.

In the adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[Other additives, solvents] The adhesive composition (I-4) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope that does not impair the efficacy of the present invention. In addition, the adhesive composition (I-4) may also contain a solvent for the same purpose as the adhesive composition (I-1). As the other additives and solvents mentioned above in the adhesive composition (I-4), the same ones as the other additives and solvents in the adhesive composition (I-1) can be listed. The other additives and solvents contained in the adhesive composition (I-4) may be only one or two or more. In the case of two or more, the combination and ratio of these other additives and solvents can be arbitrarily selected. The contents of other additives and solvents in the adhesive composition (I-4) are not particularly limited and can be appropriately selected according to their types.

[Adhesive composition production method] Adhesive compositions (I-1) to (I-3) or adhesive compositions (I-4) other than adhesive compositions (I-1) to (I-3) are obtained by mixing the aforementioned adhesive and, as necessary, components other than the aforementioned adhesive to constitute the adhesive composition. The order of addition of the components during mixing is not particularly limited, and two or more components may be added simultaneously. When a solvent is used, the solvent may be mixed with any of the components other than the solvent to dilute the components in advance and then use the components, or the solvent may be mixed with the components without diluting any of the components other than the solvent in advance and then use the components. There is no particular limitation on the method of mixing the components during preparation, and it can be appropriately selected from the following known methods: a method of mixing by rotating a stirrer or a stirring blade; a method of mixing by using a mixer; a method of mixing by applying ultrasonic waves. The temperature and time when adding and mixing the components are not particularly limited as long as the components are not degraded, and they can be appropriately adjusted. The temperature is preferably 15°C to 30°C.

○Intermediate layer, intermediate layer forming composition The intermediate layer is in sheet or film form and contains the non-silicone resin as a main component. The intermediate layer may contain only the non-silicone resin (consisting only of the non-silicone resin), or may contain the non-silicone resin and components other than the non-silicone resin.

The intermediate layer can be formed, for example, using an intermediate layer forming composition containing the aforementioned non-silicone resin. For example, the intermediate layer can be formed by applying the aforementioned intermediate layer forming composition on the intermediate layer formation target surface and drying it as needed.

The weight average molecular weight of the non-silicon resin is 100000 or less. In order to further improve the separation suitability of the semiconductor wafer of the semiconductor device manufacturing sheet, the weight average molecular weight of the non-silicon resin may be, for example, 80000 or less, 60000 or less, or 40000 or less.

The lower limit of the weight average molecular weight of the non-silicone resin is not particularly limited. For example, the non-silicone resin having a weight average molecular weight of 5000 or more is more easily available.

The weight average molecular weight of the non-silicone resin can be appropriately adjusted within a range set by arbitrarily combining the above lower limit value with any upper limit value. For example, in one embodiment, the weight average molecular weight can be any one of 5,000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000.

In this embodiment, the phrase "the intermediate layer contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component" means that "the intermediate layer contains the non-silicone resin in an amount sufficient to fully exert the effect obtained by containing the non-silicone resin having a weight average molecular weight of 100,000 or less." From this point of view, in the intermediate layer, the ratio of the content of the aforementioned non-silicone resin to the total mass of the intermediate layer (in other words, in the intermediate layer forming composition, the ratio of the content of the aforementioned non-silicone resin to the total content of all components other than the solvent) is preferably 50 mass% or more, more preferably 80 mass% or more, and further preferably 90 mass% or more, for example, any one of 95 mass% or more, 97 mass% or more, and 99 mass% or more. On the other hand, the aforementioned ratio is 100 mass% or less.

The aforementioned non-silicon resin having a weight average molecular weight of 100,000 or less is not particularly limited as long as it is a resin component having a weight average molecular weight of 100,000 or less and not having silicon atoms as constituent atoms. The aforementioned non-silicon resin may be, for example, a polar resin having a polar group and a non-polar resin having no polar group. For example, the aforementioned non-silicon resin is preferably a polar resin in terms of high solubility in the aforementioned intermediate layer forming composition and higher coating suitability of the aforementioned intermediate layer forming composition.

In this specification, unless otherwise specified, the so-called "non-silicone resin" means a non-silicone resin having a weight average molecular weight of 100,000 or less.

The non-silicone resin may be, for example, a homopolymer that is a polymer of one monomer (in other words, having only one constituent unit), or a copolymer that is a polymer of two or more monomers (in other words, having two or more constituent units).

Examples of the polar group include a carbonyloxy group (-C(=O)-O-), an oxycarbonyl group (-O-C(=O)-), and the like.

The polar resin may contain only a constituent unit having a polar group, or may contain both a constituent unit having a polar group and a constituent unit not having a polar group.

As a constituent unit having the aforementioned polar group, for example, a constituent unit derived from vinyl acetate can be cited. As a constituent unit not having the aforementioned polar group, for example, a constituent unit derived from ethylene can be cited. The so-called "derived" mentioned here means the structural change required for the polymerization of the aforementioned monomer.

In the aforementioned polar resin, the ratio of the mass of the constituent unit having a polar group to the total mass of all constituent units is preferably 5 mass % to 70 mass %, for example, any one of 7.5 mass % to 55 mass %, 10 mass % to 40 mass %, and 10 mass % to 30 mass %. In other words, in the aforementioned polar resin, the ratio of the mass of the constituent unit not having a polar group to the total mass of all constituent units is preferably 30 mass % to 95 mass %, for example, any one of 45 mass % to 92.5 mass %, 60 mass % to 90 mass %, and 70 mass % to 90 mass %. When the mass ratio of the constituent units having polar groups is greater than the lower limit, the polar resin more significantly has the property of containing polar groups. When the mass ratio of the constituent units having polar groups is less than the upper limit, the polar resin more moderately has the property of not containing polar groups.

Examples of the polar resin include ethylene-vinyl acetate copolymers, etc. The content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the non-silicone resin may be, for example, 50% to 100% by mass, 80% to 100% by mass, or 90% to 100% by mass. Among them, as preferred polar resins mentioned above, for example, there can be listed: ethylene-vinyl acetate copolymers in which the ratio of the mass of constituent units derived from vinyl acetate to the total mass of all constituent units in ethylene-vinyl acetate copolymers (sometimes referred to as "the content of constituent units derived from vinyl acetate" in this specification) is 40 mass% or less; ethylene-vinyl acetate copolymers in which the above ratio is 30 mass% or less; ethylene-vinyl acetate copolymers in which the above ratio is from 10 mass% to 40 mass%; ethylene-vinyl acetate copolymers in which the above ratio is from 10 mass% to 30 mass%. In other words, as preferred polar resins mentioned above, for example, there can be listed: ethylene-vinyl acetate copolymers in which the mass ratio of constituent units derived from ethylene to the total mass of all constituent units is 60% by mass or more; ethylene-vinyl acetate copolymers in which the above ratio is 70% by mass or more; ethylene-vinyl acetate copolymers in which the above ratio is 70% by mass to 90% by mass; ethylene-vinyl acetate copolymers in which the above ratio is 60% by mass to 90% by mass. By keeping the content ratio of constituent units derived from vinyl acetate below the above upper limit, even if chips are generated from the middle layer when the film adhesive is cut, the adhesion of the generated chips is appropriately reduced, and the chips can be easily removed from the chip by washing or the like.

Examples of the non-polar resin include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene catalyst linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); and polypropylene (PP).

The composition for forming the intermediate layer and the intermediate layer may contain only one kind of the non-silicone resin or two or more kinds of the non-silicone resin. When there are two or more kinds of the non-silicone resin, the combination and ratio of the non-silicone resins may be arbitrarily selected. For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more non-silicone resins as polar resins and no non-silicone resins as non-polar resins, may contain one or more non-silicone resins as non-polar resins and no non-silicone resins as polar resins, or may contain one or more non-silicone resins as polar resins and no non-silicone resins as non-polar resins. The composition for forming the intermediate layer and the intermediate layer preferably contain at least a non-silicone resin as a polar resin.

In the composition for forming the intermediate layer and the intermediate layer, the content of the aforementioned non-silicone resin as the polar resin relative to the total content of the aforementioned non-silicone resin is preferably 50% by mass or more, preferably 80% by mass or more, and more preferably 90% by mass or more, for example, any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. By making the aforementioned ratio greater than the aforementioned lower limit, the effect obtained by using the aforementioned polar resin can be more significantly obtained. On the other hand, the aforementioned ratio is less than 100% by mass.

That is, in the composition for forming the intermediate layer and the intermediate layer, the ratio of the content of the aforementioned non-silicone resin as the non-polar resin to the total content of the aforementioned non-silicone resin is preferably 20 mass % or less, more preferably 10 mass % or less, for example, any one of 5 mass % or less, 3 mass % or less, and 1 mass % or less. On the other hand, the aforementioned ratio is 0 mass % or more.

In terms of good workability, the composition for forming the intermediate layer preferably contains a solvent in addition to the aforementioned non-silicone resin, and may also contain a component that is not equivalent to either the aforementioned non-silicone resin or the solvent (sometimes referred to as an "additive" in this specification). The intermediate layer may contain only the aforementioned non-silicone resin, or may contain both the aforementioned non-silicone resin and the aforementioned additive.

The aforementioned additive may be any of a resin component (sometimes referred to as "other resin components" in this specification) and a non-resin component.

Examples of the other resin components include non-silicone resins having a weight average molecular weight (Mw) exceeding 100,000 and silicone resins.

The non-silicone resin having a weight average molecular weight exceeding 100,000 is not particularly limited as long as it satisfies the above conditions.

The intermediate layer containing the aforementioned silicone resin makes it easier to pick up the semiconductor chip having the film-like adhesive as described later.

The aforementioned silicon-based resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicon-based resin is not particularly limited.

Preferred silicone resins include, for example, resin components that exhibit a demolding effect on adhesive components, and more preferably silicone resins (resin components having a siloxane bond (-Si-O-Si-), also referred to as silicone compounds).

Examples of the silicone resin include polydialkylsiloxane, etc. The carbon number of the alkyl group of the polydialkylsiloxane is preferably 1 to 20. Examples of the polydialkylsiloxane include polydimethylsiloxane, etc.

The non-resin component may be, for example, an organic compound or an inorganic compound, and is not particularly limited.

The intermediate layer forming composition and the intermediate layer may contain only one or more of the aforementioned additives. In the case of more than two, the combination and ratio of these additives can be arbitrarily selected. For example, as the aforementioned additives, the intermediate layer forming composition and the intermediate layer may contain one or more resin components and no non-resin components, may contain one or more non-resin components and no resin components, or may contain one or more resin components and non-resin components together.

When the composition for forming the intermediate layer and the intermediate layer contain the aforementioned additive, the ratio of the content of the aforementioned non-silicone resin in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the aforementioned non-silicone resin to the total content of all components other than the solvent in the composition for forming the intermediate layer) is preferably 90 mass% to 99.99 mass%, for example, it may be any one of 90 mass% to 97.5 mass%, 90 mass% to 95 mass% and 90 mass% to 92.5 mass%, or any one of 92.5 mass% to 99.99 mass%, 95 mass% to 99.99 mass% and 97.5 mass% to 99.99 mass%, or 92.5 mass% to 97.5 mass%. When the composition for forming the intermediate layer and the intermediate layer contain the aforementioned additive, the ratio of the content of the aforementioned additive to the total mass of the intermediate layer in the intermediate layer (in other words, the ratio of the content of the aforementioned additive to the total content of all components other than the solvent in the composition for forming the intermediate layer) is preferably 0.01 mass % to 10 mass %, for example, it may be any one of 2.5 mass % to 10 mass %, 5 mass % to 10 mass % and 7.5 mass % to 10 mass %, or any one of 0.01 mass % to 7.5 mass %, 0.01 mass % to 5 mass % and 0.01 mass % to 2.5 mass %, or 2.5 mass % to 7.5 mass %.

The aforementioned solvent contained in the composition for forming the intermediate layer is not particularly limited. Preferred examples include: hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having amide bonds) such as dimethylformamide and N-methylpyrrolidone, etc. The solvent contained in the composition for forming the intermediate layer may be only one or may be two or more. In the case of two or more, the combination and ratio of these solvents may be arbitrarily selected.

From the viewpoint of being able to more uniformly mix the components contained in the intermediate layer forming composition, the solvent contained in the intermediate layer forming composition is preferably tetrahydrofuran or the like.

The content of the solvent in the intermediate layer forming composition is not particularly limited and may be appropriately selected according to the types of components other than the solvent, for example.

As described later, in terms of being able to more easily pick up semiconductor chips with film-like adhesives, a preferred intermediate layer may include, for example: an ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin, and a siloxane compound as the aforementioned additive, wherein the ratio of the content of the aforementioned ethylene-vinyl acetate copolymer (the aforementioned non-silicone resin) in the intermediate layer to the total mass of the intermediate layer is any of the above-mentioned numerical ranges, and the ratio of the content of the aforementioned siloxane compound (the aforementioned additive) in the intermediate layer to the total mass of the intermediate layer is any of the above-mentioned numerical ranges. For example, such an intermediate layer may include: an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01% to 10% by mass relative to the total mass of the intermediate layer. However, this is only an example of a preferred intermediate layer.

As a more preferred intermediate layer, for example, the intermediate layer contains an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the mass ratio of the constituent units derived from vinyl acetate to the total mass of all constituent units in the ethylene-vinyl acetate copolymer (in other words, the content of the constituent units derived from vinyl acetate) is 10% to 40% by mass, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% to 99.99% by mass to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01% to 10% by mass to the total mass of the intermediate layer. However, this is only one example of a more preferred intermediate layer.

In the semiconductor device manufacturing sheet, when the surface of the film adhesive side of the intermediate layer (for example, the first surface 13a of the intermediate layer 13 in FIG. 1) is analyzed by X-ray photoelectron spectroscopy (sometimes referred to as "XPS" in this specification), the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen and silicon (sometimes referred to as "silicon concentration ratio" in this specification) is preferably 1% to 20% on a molar basis of the element. By using a semiconductor device manufacturing sheet having such an intermediate layer, as described later, it is possible to more easily pick up a semiconductor chip having a film adhesive.

The ratio of the above silicon concentration can be calculated by the following formula. [Measured value of silicon concentration in XPS analysis (atomic %)]/{[Measured value of carbon concentration in XPS analysis (atomic %)]+[Measured value of oxygen concentration in XPS analysis (atomic %)]+[Measured value of nitrogen concentration in XPS analysis (atomic %)]+[Measured value of silicon concentration in XPS analysis (atomic %)]}×100.

XPS analysis can be performed on the surface of the intermediate layer on the film adhesive side using an X-ray photoelectron spectrometer (e.g., "Quantra SXM" manufactured by Ulvac) at an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W.

In order to achieve a more significant effect, the ratio of the silicon concentration may be, for example, any one of 4% to 20%, 8% to 20% and 12% to 20% on a molar basis of the element; any one of 1% to 16%, 1% to 12% and 1% to 8%; or any one of 4% to 16% and 8% to 12%.

When XPS analysis is performed as described above, other elements other than carbon, oxygen, nitrogen, and silicon may be detected in the above-mentioned surface of the intermediate layer (the surface to be analyzed by XPS). However, even if the above-mentioned other elements are detected, the concentration of the other elements is usually very small. Therefore, when calculating the above-mentioned silicon concentration ratio, the above-mentioned silicon concentration ratio can be calculated with high accuracy by using the measured values of the concentrations of carbon, oxygen, nitrogen, and silicon.

The intermediate layer may be composed of a single layer or a plurality of layers including two or more layers. When composed of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.

As described above, the maximum value of the width of the intermediate layer is preferably smaller than the maximum value of the width of the adhesive layer and the maximum value of the width of the substrate. The maximum value of the width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the intermediate layer can also be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150mm in a direction parallel to the attachment surface of the semiconductor device manufacturing sheet, a semiconductor wafer having a maximum width of 200mm, or a semiconductor wafer having a maximum width of 300mm. However, as described above, after cutting is performed accompanying the formation of a modified layer in the semiconductor wafer, when the film adhesive is cut by expanding the semiconductor device manufacturing sheet, as described later, the plurality of semiconductor chips (semiconductor chip group) after cutting are treated as a whole, and the semiconductor device manufacturing sheet is attached to these semiconductor chips.

In this specification, unless otherwise specified, the so-called "width of the intermediate layer" means, for example, "the width of the intermediate layer in a direction parallel to the first surface of the intermediate layer". For example, in the case of an intermediate layer whose plane shape is circular, the maximum value of the width of the intermediate layer becomes the diameter of the circle as the aforementioned plane shape. This is also the same in the case of a semiconductor wafer. That is, the so-called "width of the semiconductor wafer" means "the width of the semiconductor wafer in a direction parallel to the attachment surface of the semiconductor device manufacturing sheet". For example, in the case of a semiconductor wafer whose plane shape is circular, the maximum value of the width of the semiconductor wafer becomes the diameter of the circle as the aforementioned plane shape.

The maximum value of the width of the intermediate layer of 150mm to 160mm means the maximum value of the width of the semiconductor wafer of 150mm, which is equal to or not more than 10mm. Similarly, the maximum value of the width of the intermediate layer of 200mm to 210mm means the maximum value of the width of the semiconductor wafer of 200mm, which is equal to or not more than 10mm. Similarly, the maximum value of the width of the intermediate layer of 300mm to 310mm means the maximum value of the width of the semiconductor wafer of 300mm, which is equal to or not more than 10mm. That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer may be, for example, 0 mm to 10 mm.

The thickness of the intermediate layer can be appropriately selected according to the purpose, preferably 5μm to 150μm, more preferably 5μm to 120μm, for example, it can be any one of 10μm to 90μm and 10μm to 60μm, and it can also be any one of 30μm to 120μm and 60μm to 120μm. By making the thickness of the intermediate layer above the aforementioned lower limit, the structure of the intermediate layer becomes more stable. By making the thickness of the intermediate layer below the aforementioned upper limit, the film adhesive can be cut more easily during blade cutting and the aforementioned expansion of the semiconductor device manufacturing sheet. Here, the so-called "thickness of the middle layer" means the thickness of the middle layer as a whole. For example, the so-called thickness of the middle layer composed of multiple layers means the total thickness of all the layers constituting the middle layer.

When the interlayer contains the aforementioned silicone resin, especially when the silicone resin has low compatibility with the aforementioned non-silicone resin as the main component, in the semiconductor device manufacturing sheet, the silicone resin in the interlayer tends to be concentrated on both sides of the interlayer (the first side and the side opposite to it) and the vicinity thereof. In addition, the stronger this tendency is, the easier it is for the film adhesive adjacent to (directly in contact with) the interlayer to be peeled off from the interlayer, and as described later, the semiconductor chip with the film adhesive can be picked up more easily. For example, when comparing interlayers that differ only in thickness but are identical in composition, area of the two surfaces, etc., in these interlayers, the ratio (mass %) of the content of silicone resin to the total mass of the interlayer is the same. However, the content (mass %) of silicone resin in the interlayer is greater in the thick interlayer than in the thin interlayer. Therefore, in the case where silicone resin is easily concentrated in the interlayer as described above, the amount of silicone resin concentrated on the two surfaces (the first surface and the surface opposite to it) and the vicinity thereof is greater in the thick interlayer than in the thin interlayer. Therefore, even if the aforementioned ratio is not changed, the pick-up suitability of the semiconductor chip with the film adhesive can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by increasing the thickness of the intermediate layer in the semiconductor device manufacturing sheet, the semiconductor chip with the film adhesive can be picked up more easily.

The intermediate layer can be formed using an adhesive composition containing the constituent material of the intermediate layer. For example, the adhesive composition can be applied to the surface where the film-like adhesive is to be formed and dried as needed to form a film-like adhesive at the target site.

The intermediate layer forming composition can be applied by the same method as the above-mentioned adhesive composition.

The drying conditions of the intermediate layer forming composition are not particularly limited. When the intermediate layer forming composition contains the aforementioned solvent, it is preferably dried by heating, and in this case, it is preferably dried at 60° C. to 130° C. for 1 minute to 6 minutes.

○ Film Adhesive The aforementioned film adhesive has curing properties, preferably thermosetting properties, and preferably pressure-sensitive adhesive properties. Film adhesives that have both thermosetting and pressure-sensitive adhesive properties can be attached to various adherends by lightly pressing them in an uncured state. In addition, film adhesives can also be attached to various adherends by softening them by heating. The film adhesive eventually becomes a highly impact-resistant cured product by curing, and the cured product can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.

When the semiconductor device manufacturing sheet is viewed from above, the area of the film adhesive (i.e., the area of the first surface) is preferably set smaller than the area of the substrate (i.e., the area of the first surface) and the area of the adhesive layer (i.e., the area of the first surface) in a manner close to the area of the semiconductor wafer before division. In such a semiconductor device manufacturing sheet, a portion of the first surface of the adhesive layer has an area that is not in contact with the intermediate layer and the film adhesive (i.e., the aforementioned non-layered area). As a result, the semiconductor device manufacturing sheet is easier to expand, and the force applied to the film adhesive during expansion is not dispersed, so the film adhesive can be cut more easily.

The film-like adhesive can be formed using an adhesive composition containing the constituent material of the film-like adhesive. For example, by applying the adhesive composition to the surface to be formed with the film-like adhesive and drying it as needed, the film-like adhesive can be formed on the target site.

The adhesive composition can be applied by the same method as the adhesive composition.

The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, it is preferably dried at 70°C to 130°C for 10 seconds to 5 minutes.

The film adhesive may be composed of one layer (monolayer) or two or more layers. When composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

As described above, the maximum value of the width of the film adhesive is preferably smaller than the maximum value of the width of the adhesive layer and the maximum value of the width of the substrate. The maximum value of the width of the film adhesive can be the same as the maximum value of the width of the intermediate layer described above, depending on the size of the semiconductor wafer. That is, the maximum value of the width of the film adhesive can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the film adhesive can also be 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm in a direction parallel to the attachment surface of the semiconductor device manufacturing sheet, a semiconductor wafer having a maximum width of 200 mm, or a semiconductor wafer having a maximum width of 300 mm.

In this specification, unless otherwise specified, the so-called "width of the film adhesive" means, for example, "the width of the film adhesive in a direction parallel to the first surface of the film adhesive". For example, in the case of a film adhesive having a circular planar shape, the maximum value of the width of the film adhesive becomes the diameter of the circle of the aforementioned planar shape. In addition, unless otherwise specified, the so-called "width of the film adhesive" means "the width of the film adhesive before (not cut) cutting" in the manufacturing process of the semiconductor chip with the film adhesive described later, rather than the width of the film adhesive after cutting.

The maximum value of the width of the film adhesive of 150mm to 160mm means the maximum value of the width of the semiconductor wafer of 150mm, which is equal to or not more than 10mm. Similarly, the maximum value of the width of the film adhesive of 200mm to 210mm means the maximum value of the width of the semiconductor wafer of 200mm, which is equal to or not more than 10mm. Similarly, the maximum value of the width of the film adhesive of 300mm to 310mm means the maximum value of the width of the semiconductor wafer of 300mm, which is equal to or not more than 10mm. That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer may be, for example, 0 mm to 10 mm.

In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive can be any of the above numerical ranges. That is, as an example of a sheet for manufacturing a semiconductor device in this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive are both 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm.

The thickness of the film adhesive is not particularly limited, and is preferably 1 μm to 30 μm, more preferably 2 μm to 20 μm, and particularly preferably 3 μm to 10 μm. When the thickness of the film adhesive is above the aforementioned lower limit, a higher bonding force can be obtained relative to the adherend (semiconductor chip). When the thickness of the film adhesive is below the aforementioned upper limit, the film adhesive can be cut more easily during blade cutting or the aforementioned expansion of the semiconductor device manufacturing sheet. Here, the so-called "thickness of the film adhesive" means the thickness of the film adhesive as a whole. For example, the thickness of a film adhesive composed of multiple layers means the total thickness of all layers constituting the film adhesive.

The intermediate layer and the film-like adhesive preferably have a first surface of the intermediate layer having an area equal to or greater than that of the first surface of the film-like adhesive, and may have the same shape as each other. The intermediate layer and the film-like adhesive are preferably layered in such a way that the peripheries of the shapes in plan view are consistent.

The following adhesive composition may contain one or more of the following components, for example, in a manner in which the total content (mass %) does not exceed 100 mass %. Next, the aforementioned adhesive composition is described.

[Adhesive composition] As a preferred adhesive composition, for example, a composition containing a polymer component (a) and a thermosetting component can be listed. Each component is described below. In addition, the adhesive composition shown below is a preferred example, and the adhesive composition in this embodiment is not limited to the one shown below.

[Polymer component (a)] Polymer component (a) is a component formed by a polymerization reaction of a polymerizable compound, and is a polymer compound used to impart film-forming properties or flexibility to a film-like adhesive and to improve the adhesiveness (in other words, adhesion) to a bonding object such as a semiconductor chip. Polymer component (a) is thermoplastic and not thermosetting.

The polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these polymer components (a) may be arbitrarily selected.

Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, saturated polyester resins, etc. Among these, the polymer component (a) is preferably an acrylic resin.

In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components other than the solvent (i.e., the ratio of the content of the polymer component (a) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 20 mass % to 75 mass %, more preferably 30 mass % to 65 mass %.

[Thermosetting component (b)] Thermosetting component (b) is a component that has thermosetting properties and is used to thermally cure the film-like adhesive. The thermosetting component (b) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these thermosetting components (b) can be arbitrarily selected.

Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins. Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

〇Epoxy-based thermosetting resin The epoxy-based thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2). The epoxy-based thermosetting resin contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these epoxy-based thermosetting resins may be arbitrarily selected.

・Epoxy resin (b1) As the epoxy resin (b1), there can be listed publicly known ones, for example, there can be listed: polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, o-cresol novolac epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin and other epoxy compounds having two or more functions.

As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group may also be used. An epoxy resin having an unsaturated hydrocarbon group has a higher compatibility with an acrylic resin than an epoxy resin having no unsaturated hydrocarbon group. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained using the film adhesive is improved.

The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these epoxy resins (b1) may be arbitrarily selected.

・Thermosetting agent (b2) Thermosetting agent (b2) functions as a curing agent for epoxy resin (b1). As thermosetting agent (b2), for example, a compound having two or more functional groups capable of reacting with epoxy groups in one molecule can be listed. As the aforementioned functional group, for example, a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, an acid anhydride group, etc. can be listed, preferably a phenolic hydroxyl group, an amine group or an acid anhydride group, and more preferably a phenolic hydroxyl group or an amine group.

In the thermosetting agent (b2), examples of phenolic curing agents having a phenolic hydroxyl group include: multifunctional phenolic resins, biphenol, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, aralkyl-type phenolic resins, etc. In the thermosetting agent (b2), examples of amine-based curing agents having an amino group include dicyandiamide (DICY), etc.

The heat curing agent (b2) may also have an unsaturated hydrocarbon group.

The adhesive composition and the film-like adhesive may contain only one kind of thermosetting agent (b2) or two or more kinds of thermosetting agents. When there are two or more kinds of thermosetting agents (b2), the combination and ratio of these thermosetting agents (b2) may be arbitrarily selected.

In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin (b1), for example, any one of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. By the aforementioned content of the thermosetting agent (b2) being above the aforementioned lower limit, the film adhesive is more easily hardened. By the aforementioned content of the thermosetting agent (b2) being below the aforementioned upper limit, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained using the film adhesive is further improved.

In the adhesive composition and the film adhesive, the content of the thermosetting component (b) (for example, the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, for example, any one of 5 to 35 parts by mass and 5 to 20 parts by mass. When the content of the thermosetting component (b) is within the above range, the peeling force between the intermediate layer and the film adhesive is more stable.

In order to improve various physical properties of the film adhesive, the adhesive composition and the film adhesive may contain other components other than the polymer component (a) and the thermosetting component (b) as needed. Preferred other components contained in the adhesive composition and the film adhesive include, for example: curing accelerator (c), filler (d), coupling agent (e), crosslinking agent (f), energy ray curing resin (g), photopolymerization initiator (h), general additive (i), etc.

[Hardening accelerator (c)] Hardening accelerator (c) is a component used to adjust the hardening speed of the adhesive composition. Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylborates such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate.

The hardening accelerator (c) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these hardening accelerators (c) may be arbitrarily selected.

When a hardening accelerator (c) is used, the content of the hardening accelerator (c) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the content of the thermosetting component (b) in the adhesive composition and the film-like adhesive. When the content of the hardening accelerator (c) is equal to or greater than the lower limit, the effect obtained by using the hardening accelerator (c) can be more significantly obtained. By keeping the content of the hardening accelerator (c) below the aforementioned upper limit, the effect of suppressing the high-polarity hardening accelerator (c) from migrating to the bonding interface side between the film-like adhesive and the adherend in the film-like adhesive under high temperature and high humidity conditions and thereby segregating becomes higher, thereby further improving the reliability of the package obtained using the film-like adhesive.

[Filler (d)] By containing filler (d), the film adhesive further improves the cut-off property of expansion. In addition, by containing filler (d), the film adhesive can easily adjust the thermal expansion coefficient, and by optimizing the thermal expansion coefficient for the object to which the film adhesive is attached, the reliability of the package obtained by using the film adhesive is further improved. In addition, by containing filler (d), the moisture absorption rate of the film adhesive after curing can be reduced, or the heat dissipation can be improved.

The filler (d) may be any of an organic filler and an inorganic filler, preferably an inorganic filler. Preferred inorganic fillers include, for example: powders of silica, alumina, talc, calcium carbonate, titanium dioxide, red iron, silicon carbide, boron nitride, etc.; beads obtained by sphericalizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc. Among these, the inorganic filler is preferably silica or alumina.

The filler (d) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these fillers (d) may be arbitrarily selected.

When filler (d) is used, the ratio of the content of filler (d) to the total content of all components other than the solvent in the adhesive composition (i.e., the ratio of the content of filler (d) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 5% by mass to 80% by mass, more preferably 10% by mass to 70% by mass, and even more preferably 20% by mass to 60% by mass. When the above ratio is within such a range, the effect obtained by using the above filler (d) can be more significantly obtained.

[Coupling agent (e)] By containing a coupling agent (e), the film adhesive has improved adhesion and close contact with the adherend. In addition, by containing a coupling agent (e) in the film adhesive, the cured product of the film adhesive has improved water resistance without damaging the heat resistance. The coupling agent (e) has a functional group that can react with an inorganic compound or an organic compound.

The coupling agent (e) is preferably a compound having a functional group that can react with the functional group of the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these coupling agents (e) may be arbitrarily selected.

When a coupling agent (e) is used, the content of the coupling agent (e) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b) in the adhesive composition and the film adhesive. When the content of the coupling agent (e) is greater than the lower limit, the effects of using the coupling agent (e), such as improved dispersibility of the filler (d) in the resin or improved adhesion between the film adhesive and the adherend, can be more significantly obtained. When the content of the coupling agent (e) is less than the upper limit, the generation of outgassing can be further suppressed.

[Crosslinking agent (f)] When the above-mentioned acrylic resin having a functional group such as a vinyl group, a (meth)acryl group, an amino group, a hydroxyl group, a carboxyl group, an isocyanate group, etc. that can bond with other compounds is used as the polymer component (a), the adhesive composition and the film adhesive may also contain a crosslinking agent (f). The crosslinking agent (f) is a component used to crosslink the above-mentioned functional groups in the polymer component (a) with other compounds. By crosslinking in this way, the initial bonding force and cohesive force of the film adhesive can be adjusted.

Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), aziridine crosslinking agents (crosslinking agents having an aziridine group), and the like.

When an organic polyisocyanate compound is used as the crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinking structure can be easily introduced into the film-like adhesive by the reaction between the crosslinking agent (f) and the polymer component (a).

The crosslinking agent (f) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these crosslinking agents (f) may be arbitrarily selected.

When a crosslinking agent (f) is used, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass, relative to 100 parts by mass of the polymer component (a) in the adhesive composition. When the content of the crosslinking agent (f) is above the lower limit, the effect obtained by using the crosslinking agent (f) can be more significantly obtained. When the content of the crosslinking agent (f) is below the upper limit, excessive use of the crosslinking agent (f) can be suppressed.

[Energy ray curable resin (g)] The adhesive composition and the film-like adhesive contain the energy ray curable resin (g), and the film-like adhesive can change its properties by irradiation with energy rays.

The energy ray-curable resin (g) is obtained from an energy ray-curable compound. Examples of the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, preferably acrylate compounds having a (meth)acryloyl group.

The energy ray curable resin (g) contained in the adhesive composition may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these energy ray curable resins (g) may be arbitrarily selected.

When the energy ray curable resin (g) is used, the content of the energy ray curable resin (g) in the adhesive composition is preferably 1 mass % to 95 mass %, more preferably 5 mass % to 90 mass %, and even more preferably 10 mass % to 85 mass % relative to the total mass of the adhesive composition.

[Photopolymerization Initiator (h)] When the adhesive composition and the film-like adhesive contain the energy ray curable resin (g), a photopolymerization initiator (h) may be contained in order to efficiently carry out the polymerization reaction of the energy ray curable resin (g).

Examples of the photopolymerization initiator (h) in the connecter composition include: benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acyl compounds such as bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, and 2,4,6-trimethylbenzyldiphenylphosphine oxide; phosphine oxide compounds; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanone compounds such as thiothionone; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4-diethylthiothionone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc. In addition, as the photopolymerization initiator (h), for example, photosensitizers such as amines can also be listed.

The photopolymerization initiator (h) contained in the adhesive composition may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of these photopolymerization initiators (h) may be arbitrarily selected.

When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable resin (g).

[General-purpose additive (i)] General-purpose additive (i) may be any known additive and may be selected according to the purpose without particular limitation. Preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), getters, and the like.

The general-purpose additive (i) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these general-purpose additives (i) may be arbitrarily selected. The content of the adhesive composition and the film-like adhesive is not particularly limited, and may be appropriately selected according to the purpose.

[Solvent] The adhesive composition preferably further contains a solvent. The adhesive composition containing a solvent has good operability. The aforementioned solvent is not particularly limited, and preferred examples include: hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having amide bonds) such as dimethylformamide and N-methylpyrrolidone, etc. The solvent contained in the adhesive composition may be only one or two or more. In the case of two or more, the combination and ratio of these solvents can be arbitrarily selected.

From the viewpoint of being able to more uniformly mix the components contained in the adhesive composition, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

The content of the solvent in the adhesive composition is not particularly limited and can be appropriately selected according to the types of components other than the solvent.

[Method for producing adhesive composition] The adhesive composition is obtained by mixing the components constituting the adhesive composition. The adhesive composition can be produced by the same method as the adhesive composition described above, except that the types of the mixed components are different.

○ Peeling film The material constituting the peeling film is preferably various resins, which can be listed as examples of the aforementioned substrates, preferably polyethylene terephthalate (PET).

The thickness of the peeling film can be appropriately selected according to the purpose, and may be greater than 10 μm and less than 200 μm, greater than 20 μm and less than 150 μm, or greater than 30 μm and less than 80 μm.

Here, the so-called "thickness of the peeling film" refers to the thickness of the peeling film as a whole. For example, the so-called thickness of a peeling film composed of multiple layers refers to the total thickness of all the layers constituting the peeling film.

The peeling film may contain, in addition to the aforementioned resin and other main constituent materials, various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.

The bonding surface of the release film relative to the film adhesive is preferably a release-treated surface treated with a release agent. The release-treated surface may contain a release agent. Examples of the release agent include alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based, and wax-based release agents, and silicone-based release agents containing silicone are preferred.

In order to use the above-mentioned stripping agent for stripping treatment, the following methods can be listed: the stripping agent is kept in a solvent-free state or diluted with a solvent or made into an emulsion, and is applied by a gravure coater, a Mayer rod coater, an air knife coater, a roll coater, etc., and the film coated with the stripping agent is supplied at room temperature or under heating, or hardened by an electron beam, or formed into a laminate by wet lamination or dry lamination, hot melt lamination, melt extrusion lamination, co-extrusion processing, etc.

The release film 15 described in the above-mentioned semiconductor device manufacturing sheet 101 can be interpreted as a second release film 15 in the manufacturing method of the semiconductor device manufacturing sheet of the embodiment described later.

◇Method for manufacturing a sheet for manufacturing a semiconductor device The aforementioned sheet for manufacturing a semiconductor device can be manufactured by laminating the aforementioned layers in a corresponding positional relationship. The method for forming each layer is as described above.

For example, the aforementioned semiconductor device manufacturing sheet can be manufactured by separately preparing a substrate, an adhesive layer, an intermediate layer, and a film adhesive, and laminating them in the order of the substrate, the adhesive layer, the intermediate layer, and the film adhesive. However, this method is only one example of a method for manufacturing a semiconductor device manufacturing sheet.

The semiconductor device manufacturing sheet can also be manufactured, for example, by preparing two or more intermediate laminate bodies composed of a plurality of laminate layers to constitute the semiconductor device manufacturing sheet, and bonding these intermediate laminate bodies to each other. The structure of the intermediate laminate body can be arbitrarily selected as appropriate. For example, a semiconductor device manufacturing sheet can be manufactured by pre-preparing a first intermediate laminate body having a structure of a substrate and an adhesive layer (equivalent to the aforementioned support sheet) and a second intermediate laminate body having an intermediate layer and a film-like adhesive layer, and bonding the adhesive layer in the first intermediate laminate body and the intermediate layer in the second intermediate laminate body. However, this is also an example of a method for manufacturing a semiconductor device manufacturing sheet.

When the area of the first surface of the intermediate layer and the first surface of the film adhesive are smaller than the area of the first surface of the adhesive layer and the first surface of the substrate as shown in FIG1, a step of processing the intermediate layer and the film adhesive to the target size can be added in any stage of the above-mentioned manufacturing method. For example, in the manufacturing method using the above-mentioned second intermediate multilayer body, a step of processing the intermediate layer and the film adhesive in the second intermediate multilayer body to the target size can be added to manufacture the semiconductor device manufacturing sheet.

When the area of the first surface of the substrate and the area of the first surface of the adhesive layer are smaller than the area of the first surface of the peeling film as shown in FIG. 1 , a step of processing the substrate and the adhesive layer to the target size can be added in any stage of the above-mentioned manufacturing method.

When manufacturing a semiconductor device manufacturing sheet having a peeling film on a film-like adhesive, for example, a film-like adhesive may be manufactured on a peeling film, and the remaining layers may be deposited while maintaining the state to manufacture the semiconductor device manufacturing sheet; or after the substrate, adhesive layer, intermediate layer and film-like adhesive are all deposited, a peeling film may be deposited on the film-like adhesive to manufacture the semiconductor device manufacturing sheet. The peeling film may be removed at a necessary stage before using the semiconductor device manufacturing sheet.

A sheet for manufacturing a semiconductor device having other layers besides a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a release film can be manufactured by adding a step of forming and laminating the other layers at an appropriate time in the above-mentioned manufacturing method.

Each layer of the semiconductor device manufacturing sheet can be processed into any shape by, for example, stamping. For example, when the intermediate layer 13 and the film adhesive 14 are set to be circular, they can be stamped into a circular shape using a stamping blade of a corresponding shape.

As one embodiment of the present invention, a method for manufacturing a semiconductor device manufacturing sheet can be exemplified as follows. A method for manufacturing a semiconductor device manufacturing sheet, wherein the semiconductor device manufacturing sheet has a substrate, an adhesive layer, an intermediate layer, a film adhesive, and a second release film, and is formed by sequentially stacking the substrate, the adhesive layer, the intermediate layer, the film adhesive, and the second release film, and the method for manufacturing the semiconductor device manufacturing sheet includes: a first processing step, for the semiconductor device having the intermediate layer, the film adhesive, and the second release film; The intermediate layer and the film-like adhesive in the second intermediate laminate body of the first peeling film are cut into a portion C at a position corresponding to the periphery of the intermediate layer and the film-like adhesive of the semiconductor device manufacturing sheet, and at least a portion of the intermediate layer and the film-like adhesive located on the outer side is removed from the cut-in portion C as a starting point to obtain a second intermediate laminate body product; the lamination step is to place the substrate and the adhesive film on the substrate. The first intermediate layer body with the adhesive layer is bonded to the second intermediate layer body to obtain a first layer body having the substrate, the adhesive layer, the intermediate layer, the film adhesive and the first release film; a re-bonding step is to remove the first release film of the first layer body and bond it to the second release film to obtain a second layer body; and a second processing step is to treat the substrate and the first intermediate layer body of the second layer body The adhesive layer forms a cut-in portion C' at a position corresponding to the periphery of the substrate and the adhesive layer of the sheet for manufacturing a semiconductor device, and at least a portion of the substrate and the adhesive layer located on the outer side are removed starting from the cut-in portion C' to obtain a sheet for manufacturing a semiconductor device; and the peeling force between the first peeling film and the film-like adhesive is greater than the peeling force between the second peeling film and the film-like adhesive.

According to the method for manufacturing a sheet for manufacturing a semiconductor device of the embodiment, the sheet for manufacturing a semiconductor device of the above-mentioned embodiment can be manufactured.

Fig. 3 is a cross-sectional view schematically showing a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. The semiconductor device manufacturing sheet shown in Fig. 3 is obtained by turning the semiconductor device manufacturing sheet shown in Fig. 1 upside down.

[First processing step] The second intermediate laminate body 102 shown in FIG. 3A has a film adhesive 14 and an intermediate layer 13, and has a structure in which a first release film 17, a film adhesive 14, an intermediate layer 13, and a third release film 16 are sequentially laminated. For the third release film 16, the intermediate layer 13, and the film adhesive 14 of the second intermediate laminate body 102, a first punch is performed to form a cut-in portion C at a position corresponding to the periphery of the intermediate layer 13 and the film adhesive 14 of the semiconductor device manufacturing sheet 101 from the side on which the third release film 16 is laminated. During the punching process, the first peeling film 17 may be cut, and a cut-in portion C may be formed on the first peeling film 17. Then, the aforementioned intermediate layer and at least a portion of the aforementioned film adhesive located on the outer side are removed starting from the cut-in portion C, and a second intermediate layer body processed product 103 (FIG. 3B) is obtained. The so-called outer side here refers to the position of the outer side of the area surrounded by the cut-in portion C in a direction parallel to the surface of the film adhesive.

[Lamination step] The third release film 16 is removed from the second intermediate laminated body 103 obtained above, so that one side of the intermediate layer 13 is exposed. In addition, the release film (not shown) is removed from the first intermediate laminated body having a release film and having a substrate 11 and an adhesive layer 12 disposed on one side of the substrate 11, so that one side of the adhesive layer 12 is exposed. Then, a lamination step is performed to bond the exposed side of the adhesive layer 12 of the first intermediate laminated body 104 to the exposed side of the intermediate layer 13 of the second intermediate laminated body 103. The first intermediate laminate 104 is laminated in a manner of covering the intermediate layer 13 and the film adhesive 14 of the second intermediate laminate workpiece 103. Thus, a first laminate 105 having the first release film 17, the film adhesive 14, the intermediate layer 13, the adhesive layer 12 and the substrate 11 is obtained (FIG. 3C).

[Re-attachment step] The first release film 17 of the first laminate 105 obtained above is removed and replaced with the second release film 15 to obtain the second laminate 107. The second laminate 107 has a structure in which the second release film 15, the film adhesive 14, the intermediate layer 13, the adhesive layer 12 and the substrate 11 are laminated in sequence (Figure 3D).

The newly attached second peeling film 15 does not have a cut-in portion C along the periphery of the intermediate layer 13 and the film-like adhesive 14.

[Second processing step] For the substrate 11 and adhesive layer 12 of the second laminate 107 obtained above, a second punching is performed to form a cut-in portion C' at a position corresponding to the outer periphery of the substrate 11 and adhesive layer 12 of the semiconductor device manufacturing sheet 101 from the side where the substrate 11 is stacked. The cut-in portion C' of the punching position here is arranged concentrically with the cut-in portion C on the outside of the cut-in portion C. During the punching, the second peeling film 15 may be cut in, and the cut-in portion C' may be formed on the second peeling film 15. Then, by removing at least a portion of the substrate 11 and the adhesive layer 12 located on the outside from the cut portion C', a semiconductor device manufacturing sheet 101 is obtained (FIG. 3E). The outside here refers to the position outside the area surrounded by the cut portion C' in a direction parallel to the surface of the film adhesive.

By performing the cutting at the position of the above-mentioned cutting portion C', the maximum value of the width _W13 (i.e., the diameter) of the intermediate layer 13 and the maximum value of the width _W14 (i.e., the diameter) of the semiconductor device manufacturing sheet 101 can be made smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the substrate 11.

The manufacturing method of the semiconductor device manufacturing sheet of the embodiment may further include, before the aforementioned first processing step: a second intermediate multilayer manufacturing step, applying an adhesive composition on the peeling treatment surface of the first release film, drying it to form a film-like adhesive, applying an intermediate layer forming composition on the peeling treatment surface of the release film, drying it to form an intermediate layer, and bonding the exposed surface of the aforementioned film-like adhesive to the exposed surface of the aforementioned intermediate layer, thereby obtaining a second intermediate multilayer body having the first release film.

The manufacturing method of the semiconductor device manufacturing sheet of the embodiment may further include, before the aforementioned lamination step: a first intermediate laminate body manufacturing step of applying an adhesive composition on the peeling treatment surface of the peeling film, drying it to form an adhesive layer, and bonding the exposed surface of the aforementioned adhesive layer to the substrate to obtain the first intermediate laminate body.

In the manufacturing method of the semiconductor device manufacturing sheet of the embodiment, the peeling force between the first peeling film and the film adhesive is higher than the peeling force between the second peeling film and the film adhesive. That is, in the re-attachment step, the first peeling film is re-attached to the second peeling film 15 having a lower peeling force. By making the aforementioned peeling force of the first peeling film higher than the aforementioned peeling force of the second peeling film, when the film adhesive layer is formed, the film forming property of the film adhesive becomes better. Generally speaking, in order to reduce the peeling force between the adherend and make it easier to peel, a peeling treatment is performed on the peeling film by using a peeling treatment agent. However, according to the research of the inventors and others, if the above adhesive composition is applied on a peeling film with low peeling force to form a film-like adhesive, the film-forming property of the film-like adhesive is sometimes poor. It can be considered that the reason is that the peeling film with low peeling force is also prone to shrinkage of the adhesive composition. Therefore, by using a first peeling film with high peeling force when making a film-like adhesive, a uniform film-like adhesive layer can be easily formed.

As a re-sticking step, re-sticking the release film of the first laminate 105 has the following advantages: in the first laminate 105, the first intermediate laminate body 104 is stacked in a manner covering the second intermediate laminate body processed object 103, so the layer structure of the first laminate 105 is not easily damaged during re-sticking.

On the other hand, when a semiconductor device manufacturing sheet having a first peeling film with high peeling force is maintained, it is sometimes difficult to peel the first peeling film from the film adhesive during use. For example, in the mounting process of peeling the peeling film and bonding the film adhesive to the semiconductor wafer, a defective condition sometimes occurs that the semiconductor manufacturing sheet is not smoothly supplied. The peeling of the peeling film here is usually automated, so it is considered difficult to adjust the conditions for peeling the peeling film in the device used for the mounting process (peeling angle or peeling speed in the mounting machine, etc.), which is easy to cause a defective condition. Therefore, in the above-mentioned re-sticking step, the first peeling film is peeled off and re-sticked to the second peeling film 15 with lower peeling force, thereby providing a semiconductor device manufacturing sheet having a second peeling film with lower peeling force. When the semiconductor device manufacturing sheet manufactured by the re-sticking step is used, the mounting process is excellent.

As an indicator of the peeling force of the first peeling film and the second peeling film, the peeling force relative to the adhesive layer obtained by the following peeling test can be used.

[Peeling test] An adhesive composition was applied to the peeling treatment surface of the first peeling film and dried to form a single layer of adhesive layer with a thickness of 10 μm to obtain a first test piece. The adhesive composition was composed of 100 parts by weight of an acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) and a crosslinking agent ("BXX 5640"); with respect to the first test piece, under the conditions of a peeling speed of 1000 mm/min, 23° C., and a humidity of 50% RH, a 180° peeling operation of peeling the first peeling film from the adhesive layer was performed in such a manner that the adhesive layer of the first test piece and the peeling treatment surface of the first peeling film formed an angle of 180° with each other, and the peeling force (mN/50mm) between the adhesive layer and the first peeling film was determined. The peeling force between the adhesive layer and the first peeling film in the first test piece is preferably greater than 180mN/50mm, preferably greater than 180mN/50mm and less than 300mN/50mm, more preferably greater than 200mN/50mm and less than 280mN/50mm, and further preferably greater than 230mN/50mm and less than 270mN/50mm. By having the peeling force of the first peeling film in the first test piece exceed the above lower limit or be greater than the above lower limit, the quality of the film adhesive layer formed on the first peeling film can be further improved. Since the peeling force of the first peeling film in the first test piece is below the upper limit, the re-attachment of the first peeling film in the re-attachment step can be easily performed.

An adhesive composition was applied to the peeling treatment surface of the second peeling film and dried to form a single-layer adhesive layer with a thickness of 10 μm to obtain a second test piece. The adhesive composition was composed of 100 parts by weight of an acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) and a crosslinking agent ("BXX" manufactured by Toyo-Chem) in terms of solids. 5640”) 1 mass part, with respect to the aforementioned second test piece, under the conditions of peeling speed 1000mm/min, 23℃, humidity 50%RH, in a manner that the aforementioned adhesive layer of the aforementioned second test piece and the peeling treatment surface of the aforementioned second peeling film form an angle of 180° with each other, the aforementioned second peeling film is peeled off from the aforementioned adhesive layer at an angle of 180°, and the peeling force between the aforementioned adhesive layer and the aforementioned second peeling film is determined by measuring the peeling force. The peeling force between the adhesive layer and the second peeling film in the second test piece is preferably 180mN/50mm or less, preferably 100mN/50mm or more and 180mN/50mm or less, more preferably 120mN/50mm or more and 170mN/50mm or less, and further preferably 130mN/50mm or more and 160mN/50mm or less. By making the peeling force of the second peeling film in the second test piece above the lower limit value, the second peeling film is prevented from being accidentally peeled off. By making the peeling force of the first peeling film in the first test piece below the upper limit value, a semiconductor manufacturing sheet with further improved suitability for mounting process is obtained.

The length of the test piece used in the measurement is not particularly limited as long as it is within the range in which the peeling force can be stably measured, and is preferably 100 mm to 300 mm.

The peeling force between the first peeling film and the film-like adhesive, and the peeling force between the second peeling film and the film-like adhesive, can also be measured by the same method as the above-mentioned peeling test. In the above-mentioned peeling test, the adhesive composition of the test piece is replaced by the adhesive composition, and the adhesive layer is replaced by the film-like adhesive, and the peeling force between the peeling film and the film-like adhesive can be obtained.

As the first peeling film and the second peeling film, the structures exemplified in the description of the peeling film of the aforementioned embodiment can be adopted, and the detailed description of the structure and the constituent materials is omitted here. The first peeling film and the second peeling film can use commercially available peeling films, and peeling films with the required peeling force can be appropriately used. In addition, by appropriately adjusting the type and content of the peeling agent (for example, the content of polysilicone) on the peeling treatment surface, the first peeling film and the second peeling film with the required peeling force can be manufactured.

According to the manufacturing method of the semiconductor device manufacturing sheet of the embodiment, a semiconductor device manufacturing sheet having a high-quality film adhesive and excellent suitability for mounting process can be provided.

◇Method for using the semiconductor device manufacturing sheet (method for manufacturing semiconductor chips with film adhesive) The aforementioned semiconductor device manufacturing sheet can be used in the manufacturing process of semiconductor devices when manufacturing semiconductor chips with film adhesive. As one embodiment of the present invention, a method for manufacturing a semiconductor chip with a film-like adhesive is provided, which comprises the following steps: a step of laminating a semiconductor wafer or a semiconductor chip on the side of the aforementioned film-like adhesive of a sheet for manufacturing a semiconductor device in the embodiment to obtain a laminate; and a step of cutting the aforementioned film-like adhesive, or the aforementioned semiconductor wafer and the aforementioned film-like adhesive along the periphery of the aforementioned semiconductor chip to obtain a semiconductor chip with a film-like adhesive.

Hereinafter, a method for using the aforementioned semiconductor device manufacturing sheet (a method for manufacturing a semiconductor chip having a film-like adhesive) will be described in detail with reference to the drawings.

The manufacturing method of a semiconductor chip with a film-like adhesive in an implementation form includes the following steps: a step of attaching the inner surface of a semiconductor wafer to the exposed surface of the film-like adhesive of a sheet for manufacturing a semiconductor device to obtain a laminated product consisting of the substrate, the adhesive layer, the intermediate layer, the film-like adhesive and the semiconductor wafer stacked in sequence; a step of dividing the semiconductor wafer and cutting the film-like adhesive to obtain a semiconductor chip with a film-like adhesive; and a step of pulling the semiconductor chip with a film-like adhesive away from the substrate, the adhesive layer and the intermediate layer and picking it up.

FIG. 4 is a cross-sectional view schematically illustrating an example of a method of using a semiconductor device manufacturing sheet, showing a situation in which the semiconductor device manufacturing sheet is attached to a semiconductor wafer and then used. In this method, the semiconductor device manufacturing sheet is used as a dicing wafer. Here, the method of use is described by taking the semiconductor device manufacturing sheet 101 shown in FIG. 1 as an example.

First, as shown in FIG. 4A , the semiconductor device manufacturing sheet 101 with the peeling film 15 removed is heated, and the film adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the inner surface 9b’ of the semiconductor wafer 9’. Symbol 9a’ indicates the circuit forming surface of the semiconductor wafer 9’.

The heating temperature during the attachment of the semiconductor device manufacturing sheet 101 is not particularly limited, but is preferably 40° C. to 70° C. in order to further improve the thermal attachment stability of the semiconductor device manufacturing sheet 101 .

The maximum value of the width _W13 of the intermediate layer 13 and the maximum value of the width _W14 of the film adhesive 14 in the semiconductor device manufacturing sheet 101 are completely the same as the maximum value of the width W9 _' of the semiconductor wafer 9', or are different but have slight errors and are basically the same.

Next, the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' obtained above is cut with a blade from the circuit forming surface 9a' side of the semiconductor wafer 9' (blade dicing is performed), thereby dividing the semiconductor wafer 9' and cutting the film adhesive 14.

The blade cutting can be performed by a known method. For example, the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not deposited (the aforementioned non-deposited area) can be fixed to a jig such as an annular frame (not shown), and then the semiconductor wafer 9' can be divided and the film adhesive 14 can be cut using a blade.

Through this step, as shown in FIG. 4B , a plurality of semiconductor chips 914 with film adhesives can be obtained, and the semiconductor chips 914 with film adhesives have a semiconductor chip 9 and a cut film adhesive 140 provided on the inner surface 9b of the semiconductor chip 9. These semiconductor chips 914 with film adhesives are fixed in an orderly manner on the middle layer 13 in the laminate 10, forming a semiconductor chip group 910 with film adhesives. The inner surface 9b of the semiconductor chip 9 corresponds to the inner surface 9b' of the semiconductor wafer 9'. In addition, in FIG. 4 , the symbol 9a represents the circuit forming surface of the semiconductor chip 9, which corresponds to the circuit forming surface 9a' of the semiconductor wafer 9'.

When cutting with a blade, it is preferred to use a blade to separate the semiconductor wafer 9' by cutting into the entire region in the thickness direction, and for the semiconductor device manufacturing sheet 101, cut from the first surface 14a of the film adhesive 14 to the middle area of the intermediate layer 13, thereby cutting the film adhesive 14 in the entire region in the thickness direction, and not cutting into the adhesive layer 12. That is, when cutting with a blade, it is preferred to use the blade to cut the laminated product of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' in the direction of these laminates from the circuit forming surface 9a' of the semiconductor wafer 9' to at least the first surface 13a of the intermediate layer 13, and not to cut into the surface of the intermediate layer 13 that is opposite to the first surface 13a (that is, the contact surface with the adhesive layer 12).

In this step, the blade can be easily prevented from reaching the substrate 11, thereby suppressing the generation of cutting chips from the substrate 11. In addition, the main component of the intermediate layer 13 cut by the blade is a non-silicone resin with a weight average molecular weight of 100,000 or less, especially a weight average molecular weight of 100,000 or less, thereby also suppressing the generation of cutting chips from the intermediate layer 13.

The conditions for blade cutting can be adjusted appropriately according to the purpose and are not particularly limited. Generally, the rotation speed of the blade is preferably 15000rpm to 50000rpm, and the movement speed of the blade is preferably 5mm/sec to 75mm/sec.

After the blade cutting, as shown in FIG. 4C , the semiconductor wafer 914 with film adhesive is pulled away from the middle layer 13 in the laminate 10 and picked up. Here, the semiconductor wafer 914 with film adhesive is pulled away along the arrow P direction using a pulling mechanism 7 such as a vacuum chuck. Furthermore, a cross section of the pulling mechanism 7 is shown here. The semiconductor wafer 914 with film adhesive can be picked up by a known method.

In the case where the ratio of the aforementioned silicon concentration in the first surface 13a of the intermediate layer 13 is 1% to 20%, the semiconductor chip 914 with a film adhesive can be picked up more easily. In the case where the intermediate layer 13 contains, for example, ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and a siloxane compound as the aforementioned additive, the ratio of the content of ethylene-vinyl acetate copolymer in the intermediate layer to the total mass of the intermediate layer is 90 mass% to 99.99 mass%, and the ratio of the content of the aforementioned siloxane compound in the intermediate layer to the total mass of the intermediate layer is 0.01 mass% to 10 mass%, the semiconductor chip 914 with a film adhesive can be picked up more easily.

In the above-mentioned method for manufacturing a semiconductor chip with a film-like adhesive described so far, as a preferred embodiment, the following method for manufacturing a semiconductor chip with a film-like adhesive can be cited, for example, wherein the semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive disposed on the inner surface of the aforementioned semiconductor chip, and the aforementioned semiconductor device manufacturing sheet comprises the aforementioned substrate, adhesive layer, intermediate layer and film-like adhesive; the aforementioned manufacturing method comprises the following steps: while heating the aforementioned semiconductor device manufacturing sheet, the film-like adhesive in the semiconductor device manufacturing sheet is attached to the inner surface of the aforementioned semiconductor wafer; The aforementioned semiconductor wafer with a film-like adhesive is cut into the entire area in the thickness direction from the circuit forming surface side to be divided, thereby producing semiconductor chips, and the aforementioned semiconductor device manufacturing sheet is cut in the thickness direction from the aforementioned film-like adhesive side to the area halfway through the aforementioned intermediate layer, and the aforementioned film-like adhesive is cut without cutting into the aforementioned adhesive layer, thereby obtaining a group of semiconductor chips with a film-like adhesive in which a plurality of the aforementioned semiconductor chips with a film-like adhesive are neatly arranged on the aforementioned intermediate layer; and the step of pulling the aforementioned semiconductor chip with a film-like adhesive away from the aforementioned intermediate layer and picking it up (sometimes referred to as "manufacturing method 1" in this manual).

Another embodiment of a method for manufacturing a semiconductor chip with a film-like adhesive comprises the following steps: a step of attaching the inner surface of a semiconductor chip group in which a plurality of the aforementioned semiconductor chips are neatly arranged on the exposed surface of the aforementioned film-like adhesive of a sheet for manufacturing a semiconductor device to obtain a laminated product consisting of the aforementioned substrate, the aforementioned adhesive layer, the aforementioned intermediate layer, the aforementioned film-like adhesive and the aforementioned semiconductor chip group stacked in sequence; a step of cutting the aforementioned film-like adhesive to obtain a semiconductor chip with a film-like adhesive; and a step of pulling the aforementioned semiconductor chip with a film-like adhesive away from the aforementioned substrate, the aforementioned adhesive layer and the aforementioned intermediate layer and picking it up.

FIG5 is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip as a use object of a semiconductor device manufacturing sheet, showing a situation in which a semiconductor chip is manufactured by performing cutting accompanied by formation of a modified layer in a semiconductor wafer. FIG6 is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet, showing a situation in which a semiconductor device manufacturing sheet is attached to a semiconductor chip and then used. In this method, the semiconductor device manufacturing sheet is used as a wafer. Here, the semiconductor device manufacturing sheet 101 shown in FIG1 is taken as an example, and the method for using the semiconductor device manufacturing sheet 101 is explained.

First, before using the semiconductor device manufacturing sheet 101, as shown in Fig. 5A, a semiconductor wafer 9' is prepared and a back grinding tape (sometimes also called "surface protection tape") 8 is attached to the circuit formation surface 9a' of the semiconductor wafer 9'. In Fig. 5, symbol W _9' indicates the width of the semiconductor wafer 9'.

Then, laser light (not shown) is irradiated in a manner focused to a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in FIG. 5B. The aforementioned laser light is preferably irradiated to the semiconductor wafer 9' from the inner surface 9b' side of the semiconductor wafer 9'.

The focal point at this time is the predetermined position for segmentation (cutting) of the semiconductor wafer 9', and is set in such a way that semiconductor chips of target size, shape and number are obtained from the semiconductor wafer 9'.

Next, the inner surface 9b' of the semiconductor wafer 9' is ground using a grinder (not shown). Thus, the thickness of the semiconductor wafer 9' is adjusted to the target value, and by utilizing the force applied to the semiconductor wafer 9' during grinding, the semiconductor wafer 9' is divided at the formation portion of the modified layer 90', and a plurality of semiconductor chips 9 are manufactured as shown in FIG. C.

The modified layer 90' of the semiconductor wafer 9' is different from other parts of the semiconductor wafer 9' and is degraded by the irradiation of laser light, and its strength becomes weaker. Therefore, by applying force to the semiconductor wafer 9' formed with the modified layer 90', the semiconductor wafer 9' is broken at the part of the modified layer 90', and a plurality of semiconductor chips 9 can be obtained.

Through the above operation, the semiconductor wafer 9 to be used as the semiconductor device manufacturing sheet 101 is obtained. More specifically, through this step, a semiconductor wafer group 901 in which a plurality of semiconductor wafers 9 are fixedly arranged on the back grinding tape 8 is obtained.

When the semiconductor chip group 901 is viewed from above, the plane shape formed by connecting the outermost parts of the semiconductor chip group 901 (in this specification, this plane shape is sometimes referred to as the "plane shape of the semiconductor chip group") is exactly the same as the plane shape when the semiconductor wafer 9' is viewed from above, or the difference between these plane shapes is so slight that it can be ignored, and it can be said that the aforementioned plane shape of the semiconductor chip group 901 is substantially the same as the aforementioned plane shape of the semiconductor wafer 9'. Therefore, the width of the aforementioned plane shape of the semiconductor chip group 901 is regarded as the same as the width W _9' of the semiconductor wafer 9' as shown in FIG. 5C. Furthermore, the maximum value of the width of the aforementioned planar shape of the semiconductor chip group 901 is considered to be the same as the maximum value of the width W _9' of the semiconductor wafer 9'.

Furthermore, here, the situation in which the semiconductor chip 9 is manufactured from the semiconductor wafer 9' according to the purpose is shown, but depending on the conditions when the inner surface 9b' of the semiconductor wafer 9' is ground, sometimes a part of the semiconductor wafer 9' is not divided into semiconductor chips 9.

Next, the semiconductor chip 9 (semiconductor chip group 901) obtained above is used to manufacture a semiconductor chip with a film adhesive. First, as shown in FIG6A, a semiconductor device manufacturing sheet 101 with the peeling film 15 removed is heated, and the film adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the inner surface 9b of all semiconductor chips 9 in the semiconductor chip group 901. At this time, the film adhesive 14 can also be attached to the semiconductor wafer that has not been completely divided.

The maximum value of the width _W13 of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 and the maximum value of the width _W14 of the film adhesive 14 are exactly the same as the maximum value of the width W9' of the semiconductor wafer 9 _' (in other words, the width of the semiconductor chip group 901), or are different but the error is slight and they are basically the same.

At this time, the film adhesive 14 (semiconductor device manufacturing sheet 101) is attached to the semiconductor chip group 901 by the same method as the case of attaching the film adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the aforementioned manufacturing method 1, except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

Next, the back grinding tape 8 is removed from the fixed semiconductor wafer group 901. Then, as shown in FIG. 6B , the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to the surface of the semiconductor device manufacturing sheet 101 (e.g., the first surface 12a of the adhesive layer 12) while being cooled, thereby expanding. Here, the expansion direction of the semiconductor device manufacturing sheet 101 is indicated by an arrow _E1 . By expanding in this way, the film adhesive 14 is cut along the periphery of the semiconductor wafer 9.

Through this step, a plurality of semiconductor chips 914 with film adhesives can be obtained. The plurality of semiconductor chips 914 with film adhesives have a semiconductor chip 9 and a cut film adhesive 140 disposed on the inner surface 9b of the semiconductor chip 9. These semiconductor chips 914 with film adhesives are neatly arranged and fixed on the middle layer 13 in the laminate 10, forming a semiconductor chip group 910 with film adhesives. The semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained here are substantially the same as the semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained by the manufacturing method 1 described above.

As described above, when the semiconductor wafer 9' is divided, in a part of the area of the semiconductor wafer 9' that has not been divided into semiconductor chips 9, by performing this step, the area is divided into semiconductor chips.

The semiconductor device manufacturing sheet 101 is preferably expanded at a temperature of -5°C to 5°C. By cooling and expanding the semiconductor device manufacturing sheet 101 (cold expansion) in this manner, the film adhesive 14 can be cut more easily and with high accuracy.

The expansion of the semiconductor device manufacturing sheet 101 can be performed by a known method. For example, after fixing the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not layered (the aforementioned non-layered area) to a jig such as a ring frame (not shown), the area of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are layered is raised from the side of the substrate 11 in the direction from the substrate 11 to the adhesive layer 12, thereby expanding the semiconductor device manufacturing sheet 101.

In FIG6B , the aforementioned non-laminated area on the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated is roughly parallel to the first surface 13a of the intermediate layer 13, but in a state of expansion by the lifting of the semiconductor device manufacturing sheet 101 as described above, the aforementioned non-laminated area includes an inclined surface, and the height of the inclined surface decreases in a direction opposite to the above-mentioned lifting direction as it approaches the periphery of the adhesive layer 12.

In this step, the semiconductor device manufacturing sheet 101 is provided with an intermediate layer 13 (in other words, the film adhesive 14 before cutting is arranged on the intermediate layer 13), and the film adhesive 14 is cut with high precision at the target position (in other words, along the periphery of the semiconductor chip 9), so that cutting defects can be suppressed.

After expansion, as shown in FIG. 6C , the semiconductor chip 914 with the film adhesive is pulled off the middle layer 13 in the laminate 10 and picked up. The picking up at this time can be performed using the same method as the picking up in the manufacturing method 1 described above, and the picking up suitability is also the same as the picking up suitability in the manufacturing method 1.

For example, in this step, when the ratio of the aforementioned silicon concentration in the first surface 13a of the intermediate layer 13 is 1% to 20%, the semiconductor chip 914 with a film adhesive can be picked up more easily. In addition, when the intermediate layer 13 contains, for example, ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and a siloxane compound as the aforementioned additive, the ratio of the content of ethylene-vinyl acetate copolymer in the intermediate layer to the total mass of the intermediate layer is 90 mass% to 99.99 mass%, and the ratio of the content of the aforementioned siloxane compound in the intermediate layer to the total mass of the intermediate layer is 0.01 mass% to 10 mass%, the semiconductor chip 914 with a film adhesive can be picked up more easily.

In the above-mentioned method for manufacturing a semiconductor chip with a film-like adhesive described so far, as a preferred embodiment, the following method for manufacturing a semiconductor chip with a film-like adhesive can be cited, wherein the semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive disposed on the inner surface of the semiconductor chip, and the semiconductor device manufacturing sheet comprises the substrate, the adhesive layer, the intermediate layer and the film The manufacturing method comprises the following steps: forming a modified layer inside the semiconductor wafer by irradiating laser light in a manner focused on a focal point set inside the semiconductor wafer; grinding the inner surface of the semiconductor wafer after forming the modified layer, and dividing the semiconductor wafer at the formation portion of the modified layer by utilizing a force applied to the semiconductor wafer during grinding to obtain a modified layer. The step of obtaining a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged; the step of heating the aforementioned semiconductor device manufacturing sheet while attaching the film adhesive in the semiconductor device manufacturing sheet to the inner surface of all semiconductor chips in the aforementioned semiconductor chip group; the step of cooling the aforementioned semiconductor device manufacturing sheet after being attached to the aforementioned semiconductor chip while applying a film adhesive along the surface relative to the semiconductor device manufacturing sheet The film-like adhesive is stretched in a direction parallel to the semiconductor chip to cut the film-like adhesive along the periphery of the semiconductor chip to obtain a group of semiconductor chips with a film-like adhesive in which a plurality of semiconductor chips with a film-like adhesive are neatly arranged on the intermediate layer; and the semiconductor chips with a film-like adhesive are pulled away from the intermediate layer and picked up (sometimes referred to as "manufacturing method 2" in this manual).

In either the manufacturing method 1 or the manufacturing method 2, the semiconductor device manufacturing sheet 101 shown in FIG. 1 is cited as an example to explain the use method, but the semiconductor device manufacturing sheet of the present embodiment other than this can also be used in the same manner. In this case, other steps can be appropriately added as needed based on the difference in the structure between the semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101, and the semiconductor device manufacturing sheet can be used.

Not limited to the case of manufacturing method 1 and manufacturing method 2, after obtaining the semiconductor chip group with film adhesive, before picking up the semiconductor chip with film adhesive, the laminate sheet can be expanded in a direction parallel to the surface (first surface) on the side of the intermediate layer relative to the adhesive layer, and then the state is maintained to heat the peripheral portion of the laminate sheet where the semiconductor chip with film adhesive (semiconductor chip group with film adhesive) is not placed. By setting in this way, the peripheral portion can be shrunk, and the distance between adjacent semiconductor chips on the laminate sheet, that is, the kerf width, can be kept sufficiently wide and uniform. Furthermore, it is possible to more easily pick up semiconductor chips with film adhesives. [Example]

The present invention is described in more detail below by means of specific embodiments. However, the present invention is not limited to the embodiments shown below.

[Raw materials for producing the adhesive composition] The raw materials used for producing the adhesive composition are shown below. [Polymer component (a)] (a)-1: Acrylic resin (weight average molecular weight 800,000, glass transition temperature 9°C) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass). [Epoxy resin (b1)] (b1)-1: Cresol novolac type epoxy resin to which an acryl group is added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 518 g/eq, number average molecular weight 2100, unsaturated group content is equal to epoxy group content). [Thermosetting agent (b2)] (b2)-1: Aryl phenol resin ("Milex XLC-4L" manufactured by Mitsui Chemicals, number average molecular weight 1100, softening point 63°C) [Filler (d)] (d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatechs, average particle size 50nm, methacrylate silane treated product) [Coupling agent (e)] (e)-1: Silane coupling agent, 3-glycidyloxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Polysilicone) [Crosslinking agent (f)] (f)-1: Toluene diisocyanate crosslinking agent ("Coronate L" manufactured by Tosoh)

[Example 1] [Manufacturing of a sheet for manufacturing semiconductor devices] [Manufacturing of a substrate] Low-density polyethylene (LDPE, "Sumikasen L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder, and the melt was extruded using a T-die method. The extrudate was stretched on two axes using cooling rollers to obtain a substrate made of LDPE (thickness 110 μm).

[Peel film] [Light peel film] Polyethylene terephthalate film with one side treated with a silicone peeling agent (manufactured by Lintec Co., Ltd., product name "SP-PET381031"). [Heavy peel film] Polyethylene terephthalate film with one side treated with a silicone peeling agent (manufactured by Lintec Co., Ltd., product name "SP-PET382150"). [Medium peeling film] A PET film made of polyethylene terephthalate, one side of which was treated with a silicone peeling agent (manufactured by Lintec Co., Ltd., product name "SP-PET382051").

[Preparation of Adhesive Layer] A non-energy ray-curable adhesive composition was prepared, the non-energy ray-curable adhesive composition containing an acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinking agent ("BXX 5640" manufactured by Toyo-Chem) (1 part by mass).

Next, the peel film was used to apply the adhesive composition obtained above to the peel-treated surface of the peel film, and then heated and dried at 100° C. for 2 minutes to prepare a non-energy ray-curable adhesive layer (thickness 20 μm).

[Preparation of the intermediate layer] At room temperature, ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30,000, content of constituent units derived from vinyl acetate 25 mass %) (15 g) was dissolved in 85 g of tetrahydrofuran, and a siloxane compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Chemie Japan, the number of constituent units represented by the formula "-Si(-CH ₃ ) ₂ -O-" in one molecule was 45 to 230) (1.5 g) was added to the resulting solution, and stirred to prepare a composition for forming an intermediate layer.

Using the light peel film, the intermediate layer-forming composition obtained above was applied to the peel-treated surface of the light peel film, and heat-dried at 70° C. for 5 minutes to prepare an intermediate layer (thickness 20 μm).

[Preparation of film-like adhesive] Preparation of a thermosetting adhesive composition, the thermosetting adhesive composition comprising a polymer component (a)-1 (100 parts by mass), an epoxy resin (b1)-1 (10 parts by mass), a thermosetting agent (b2)-1 (1.5 parts by mass), a filler (d)-1 (75 parts by mass), a coupling agent (e)-1 (0.5 parts by mass) and a crosslinking agent (f)-1 (0.5 parts by mass).

Next, using the above-mentioned peelable film (first peelable film), the above-obtained adhesive composition was applied to the peeling-treated surface of the peelable film, and heat-dried at 80°C for 2 minutes to prepare a thermosetting film-like adhesive (thickness 7 μm).

[Manufacturing of a sheet for manufacturing semiconductor devices] The exposed surface of the adhesive layer obtained above, which is opposite to the side with the release film, is bonded to one surface of the substrate obtained above, thereby manufacturing a first intermediate laminate having a release film (in other words, a support sheet having a release film). The exposed surface of the film-like adhesive obtained above, which is opposite to the side with the heavy release film, is bonded to the exposed surface of the intermediate layer obtained above, which is opposite to the side with the light release film, thereby manufacturing a second intermediate laminate having a release film (a laminate of the light release film, the intermediate layer, the film-like adhesive, and the heavy release film).

Next, for the second intermediate layer body with the peeling film, a cutting knife is used to perform a punching process from the light peeling film on the intermediate layer side to the film adhesive to remove useless parts, thereby manufacturing a second intermediate layer body with a heavy peeling film. The second intermediate layer body with the heavy peeling film is formed by laminating a film adhesive (thickness 7μm) with a circular plane shape (diameter 305mm), an intermediate layer (thickness 20μm) and a heavy peeling film in the thickness direction on the peeling film on the film adhesive side.

Next, the peeling film is removed from the first intermediate multilayer body with the peeling film obtained above, so that one side of the adhesive layer is exposed. Furthermore, the circular peeling film is removed from the second intermediate multilayer body processed product with the peeling film obtained above, so that one side of the intermediate layer is exposed. Next, the newly formed exposed surface of the adhesive layer in the first intermediate multilayer body is bonded to the newly formed exposed surface of the intermediate layer in the second intermediate multilayer body processed product. Next, the heavy peeling film (first peeling film) is removed from the laminate of the first intermediate laminate and the second intermediate laminate, and a light peeling film (second peeling film) is attached to replace it for re-attachment. For the substrate and adhesive layer (i.e., support sheet) in the laminate obtained in this way, the plane shape of the substrate and adhesive layer (support sheet) is made circular (diameter 370mm) and concentric with the circular film adhesive and the intermediate layer (diameter 305mm), and a cutting knife (diameter 370mm) is used to perform punching processing from the substrate side to remove useless parts. By the above operation, a semiconductor device manufacturing sheet with a peeling film is obtained. The semiconductor device manufacturing sheet with a peeling film is composed of a substrate (thickness 110μm), an adhesive layer (thickness 10μm), an intermediate layer (thickness 20μm), a film-like adhesive (thickness 7μm) and a peeling film stacked in sequence in the thickness direction.

[Reference Example 1] A semiconductor device manufacturing sheet is manufactured by the same method as in Example 1 except that the heavy peeling film is replaced by a light peeling film in the laminated products of the first intermediate laminated body and the second intermediate laminated body.

[Reference Example 2] In the preparation of the above-mentioned film-like adhesive, when applying the adhesive composition to the release film, a light release film is used instead of a heavy release film, and the light release film is not replaced in the laminated product of the first intermediate laminate body and the second intermediate laminate body. Except for this, a sheet for manufacturing a semiconductor device is manufactured by the same method as in Example 1.

[Reference Example 3] In the preparation of the above-mentioned film-like adhesive, when applying the adhesive composition to the release film, a light release film is used instead of a heavy release film, and in the laminate of the first intermediate laminate body and the second intermediate laminate body, the light release film is removed and the heavy release film is attached instead. Except for this, a semiconductor device manufacturing sheet is manufactured by the same method as in Example 1.

[Reference Example 4] In the preparation of the above-mentioned film-like adhesive, when applying the adhesive composition to the peeling film, a middle peeling film is used instead of a heavy peeling film, and the middle peeling film is not replaced in the laminate of the first intermediate laminate body and the second intermediate laminate body. Except for this, a sheet for manufacturing a semiconductor device is manufactured by the same method as in Example 1.

[Evaluation] [Peeling force of the peeling film relative to the adhesive layer] The first intermediate layer body with a peeling film (supporting sheet with a peeling film) was prepared by the same method as the preparation of the first intermediate layer body (wherein the thickness of the adhesive layer after heat drying was changed to 10μm). The first intermediate layer body with a peeling film was immediately placed in an environment of 23℃ and 50%RH for 30 minutes, and then the first intermediate layer body was cut into a 50mm width as a test piece. The peeling film of the test piece at this time is used as each peeling film (light peeling film, heavy peeling film, or medium peeling film) for measuring the peeling force relative to the adhesive layer. Fix the side of the support sheet, and peel the peeling film from the support sheet in a so-called 180° peeling operation in which the contact surfaces of the adhesive layer and the peeling film are 180° apart, and measure the peeling force (mN/50mm). The measuring conditions are set to peeling speed: 1000mm/min, 23℃, and humidity 50%RH. Furthermore, the semiconductor device manufacturing sheet of the embodiment does not need to have a structure in which the adhesive layer and the corresponding peeling film are in direct contact. The evaluation of the peeling force here is used to define the evaluation of the properties of the peeling film.

[Film-forming property of film-like adhesive] A film-like adhesive was prepared by the same method as the above-mentioned film-like adhesive, and the film-forming property of the film-like adhesive was evaluated. At this time, the solid concentration of the adhesive composition was set to 15% by mass, and the adhesive composition was applied using an applicator in such a way that the thickness of the film-like adhesive after heat drying became 7μm. After the adhesive composition was applied and dried, the adhesive composition in the obtained film-like adhesive was placed on the surface of the peeling film, and the appearance was visually observed. The film-forming property of the film-like adhesive was evaluated according to the following criteria. A: No shrinkage holes with a diameter of 3mm or more were confirmed in the adhesive composition on the peeling film, and the surface condition was good. B: One to five shrinkage holes of the adhesive composition with a diameter of more than 3 mm were found on the peeling film. C: More than five shrinkage holes of the adhesive composition with a diameter of more than 3 mm were found on the peeling film.

[Suitability of mounting process] For the semiconductor device manufacturing sheets obtained in the above-mentioned embodiment and reference example, a step of attaching the film adhesive of the semiconductor device manufacturing sheet to the inner surface of a 12-inch semiconductor wafer and a ring frame (manufactured by DISCO) was performed continuously for 30 sheets using a tape mounting machine (RAD-2700 manufactured by Lintec). This step was performed while peeling the release film of the semiconductor device manufacturing sheet from the sheet. The state of the release film after the release film was peeled off from the film adhesive was confirmed.

A: All 30 sheets were able to peel off the entire surface of the film-like adhesive. B: Among the 30 sheets, it was confirmed that the entire surface of the film-like adhesive could not be peeled off, and part of the film-like adhesive was attached to the peeling film.

The above evaluation results are shown in Table 1.

[Table 1] Embodiment 1 Reference Example 1 Reference Example 2 Reference Example 3 Reference Example 4 Preparation of film adhesive First peel membrane Re-peeling membrane Re-peeling membrane Gently peel off the membrane Gently peel off the membrane Middle peel membrane Peeling force of the first peeling film on the adhesive layer (mN/50mm) 250 250 152 152 180 Film-forming properties of film adhesives A A C C B Semiconductor device manufacturing sheet Second peeling membrane Gently peel off the membrane Re-peeling membrane Gently peel off the membrane Re-peeling membrane Middle peel membrane Peeling force of the second peeling film on the adhesive layer (mN/50mm) 152 250 152 250 180 Mounting process suitability A B A B A

As shown by the above results, in Example 1, in which the heavy peeling film with high peeling force is used to prepare the film-like adhesive, and then the heavy peeling film is replaced with the light peeling film with low peeling force, the film-forming property of the film-like adhesive is good when the layer of the film-like adhesive is formed, and when used in the sheet for manufacturing semiconductor devices, the mounting process is suitable.

Each structure in each embodiment and the combination of these structures are examples, and the structure can be added, omitted, replaced, and other changes can be made without departing from the scope of the present invention. In addition, the present invention is not limited to each embodiment, but only to the scope of the claim (patent application scope). [Industrial Applicability]

The present invention can be used to manufacture semiconductor devices.

1: Support sheet 7: Pull-off mechanism 8: Back grinding tape 9: Semiconductor chip 9': Semiconductor wafer 9a: Circuit formation surface of semiconductor chip 9a': Circuit formation surface of semiconductor wafer 9b: Inner surface of semiconductor chip 9b': Inner surface of semiconductor wafer 10: Laminated sheet 11: Substrate 11a: First surface of substrate 12: Adhesive layer 12a: Surface of adhesive layer opposite to the side with substrate (first surface of adhesive layer) 13: Intermediate layer 13a: Surface of intermediate layer opposite to the side with adhesive layer (first surface of intermediate layer) 14: Film adhesive 14a: First surface of film adhesive 15: Peeling film (second peeling film) 15a: first surface of peeling film 16: third peeling film 17: first peeling film 90': modified layer 101: semiconductor device manufacturing sheet 102: second intermediate laminate 103: second intermediate laminate product 104: first intermediate laminate 105: first laminate product 107: second laminate product 140: film adhesive after cutting 901: semiconductor chip group 910: semiconductor chip group with film adhesive 914: semiconductor chip with film adhesive C, C': cut-in portion E ₁ : expansion direction P: pulling direction W ₁₃ : width of intermediate layer W ₁₄ :Width of film adhesive

[FIG. 1] is a schematic cross-sectional view of a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 2] is a plan view of the semiconductor device manufacturing sheet shown in FIG. 1. [FIG. 3A] is a schematic cross-sectional view of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 3B] is a schematic cross-sectional view of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 3C] is a schematic cross-sectional view of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 3D] is a schematic cross-sectional view of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 3E] is a schematic cross-sectional view of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 4A] is a cross-sectional view schematically illustrating an example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 4B] is a cross-sectional view schematically illustrating an example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 4C] is a cross-sectional view schematically illustrating an example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention. [FIG. 5A] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip. [FIG. 5B] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip. [FIG. 5C] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip. [FIG. 6A] is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet in one embodiment of the present invention. [FIG. 6B] is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet in one embodiment of the present invention. [FIG. 6C] is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet in one embodiment of the present invention.

1: Support film

10: Laminated film

11: Base material

11a: First side of substrate

12: Adhesive layer

12a: The side of the adhesive layer opposite to the side with the substrate (the first side of the adhesive layer)

13: Middle layer

13a: The surface of the middle layer opposite to the side with the adhesive layer (the first surface of the middle layer)

14: Film adhesive

14a: The first side of the film adhesive

15: Peeling film (second peeling film)

15a: Peel off the first side of the membrane

101: Sheets for manufacturing semiconductor devices

W ₁₃ : Width of the middle layer

W ₁₄ : Width of film adhesive

Claims (3)

A method for manufacturing a semiconductor device manufacturing sheet, the semiconductor device manufacturing sheet having a substrate, an adhesive layer, an intermediate layer, a film adhesive and a second release film, and being composed of the substrate, the adhesive layer, the intermediate layer, the film adhesive and the second release film stacked in sequence; The method for manufacturing the semiconductor device manufacturing sheet comprises: A first processing step, for the intermediate layer and the film adhesive in the second intermediate stacked body having the intermediate layer, the film adhesive and the first release film, forming a cut-in portion C at a position corresponding to the periphery of the intermediate layer and the film adhesive of the semiconductor device manufacturing sheet , starting from the cut-in portion C, the aforementioned intermediate layer and at least a portion of the aforementioned film-like adhesive located on the outside are removed to obtain a second intermediate multilayer body processed product; Lamination step, the first intermediate multilayer body having the aforementioned substrate and the aforementioned adhesive layer is bonded to the aforementioned second intermediate multilayer body processed product to obtain a substrate having the aforementioned substrate, the aforementioned adhesive layer, and the aforementioned a first laminate of the intermediate layer, the film-like adhesive and the first release film; a re-attachment step of removing the first release film of the first laminate and attaching the second release film to obtain a second laminate; and a second processing step of treating the substrate and the adhesive layer of the second laminate with the substrate of the semiconductor device manufacturing sheet. A cut-in portion C' is formed at a position corresponding to the periphery of the aforementioned adhesive layer, and at least a portion of the aforementioned substrate and the aforementioned adhesive layer located on the outer side is removed starting from the cut-in portion C' to obtain a sheet for manufacturing a semiconductor device; The peeling force between the aforementioned first peeling film and the aforementioned film-like adhesive is higher than the peeling force between the aforementioned second peeling film and the aforementioned film-like adhesive. A method for producing a semiconductor device manufacturing sheet as described in claim 1, wherein an adhesive composition is applied to the peeling treatment surface of the first peeling film and dried to form a single adhesive layer with a thickness of 10 μm to obtain a first test sheet, wherein the adhesive composition is composed of 100 parts by mass of an acrylic resin, namely "Oribain BPS 6367X" manufactured by Toyo Chemical Co., Ltd., and 1 part by mass of a crosslinking agent, namely "BXX 5640" manufactured by Toyo Chemical Co., Ltd., in terms of solids; Regarding the first test piece, under the conditions of a peeling speed of 1000 mm/min, 23°C, and a humidity of 50% RH, the peeling process of the adhesive layer of the first test piece and the peeling treatment surface of the first peeling film was 180° to each other, and the 180° peeling process of peeling the first peeling film from the adhesive layer was carried out to measure the adhesion between the adhesive layer and the first peeling film. The peeling force (mN/50mm) between the peeling films is more than 180mN/50mm; The adhesive composition is applied to the peeling treatment surface of the second peeling film and dried to form a single layer of adhesive layer with a thickness of 10μm to obtain a second test piece. The adhesive composition here is an acrylic resin in terms of solids, namely "Oribain" manufactured by Toyo Chemical Co., Ltd. BPS 6367X" 100 parts by mass and a crosslinking agent, namely "BXX 5640" manufactured by Toyo Chemical Co., Ltd. 1 part by mass; Regarding the aforementioned second test piece, under the conditions of a peeling speed of 1000 mm/min, 23°C, and a humidity of 50% RH, the aforementioned adhesive layer of the aforementioned second test piece and the peeling treatment surface of the aforementioned second peeling film are at an angle of 180° to each other, and a 180° peeling process is performed from the aforementioned adhesive layer to the aforementioned second peeling film, thereby measuring the peeling force (mN/50mm) between the aforementioned adhesive layer and the aforementioned second peeling film to be less than 180mN/50mm. A method for producing a sheet for producing a semiconductor device as recited in claim 1 or 2, wherein the intermediate layer contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component.

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