TWI900551B - Semiconductor device manufacturing sheet, method for manufacturing semiconductor device manufacturing sheet, and method for manufacturing semiconductor chip with film adhesive - Google Patents

Abstract

The present invention relates to a sheet for manufacturing semiconductor devices, comprising a label portion for attachment to a semiconductor wafer or semiconductor chip, and a peripheral portion disposed at least partially outside the label portion. The label portion and the peripheral portion comprise a substrate, an adhesive layer, an intermediate layer, and a film adhesive. The adhesive layer, the intermediate layer, the film adhesive, and a release film are sequentially deposited on the substrate. A trench is provided between the label portion and the peripheral portion, where the intermediate layer and the film adhesive are not deposited. The intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component.

Description

Semiconductor device manufacturing sheet, method for manufacturing semiconductor device manufacturing sheet, and method for manufacturing semiconductor chip with film-shaped adhesive

This invention relates to a semiconductor device manufacturing sheet, a method for manufacturing the semiconductor device manufacturing sheet, and a method for manufacturing a semiconductor chip having a film adhesive. This application is based upon and claims priority from Japanese Patent Application No. 2020-058734 filed in Japan on March 27, 2020, and the contents of that application are incorporated herein by reference.

When manufacturing semiconductor devices, a semiconductor chip with a film adhesive is used. The semiconductor chip with a film adhesive comprises a semiconductor chip and a film adhesive applied to the inner surface of the semiconductor chip. An example of a method for manufacturing a semiconductor chip with a film adhesive is the method shown below.

First, a dicing die-bonding sheet is attached to the inner surface of the semiconductor wafer. Examples of dicing die-bonding sheets include those having a support sheet and a film-like adhesive disposed on the surface of the support sheet. The support sheet can be used as a dicing sheet. Examples of support sheets include those having a base material and an adhesive layer disposed on the surface of the base material, and those consisting only of a base material. In a support sheet having an adhesive layer, the outermost surface of the adhesive layer side serves as the surface on which the film-like adhesive is disposed. The dicing die-bonding sheet is attached to the inner surface of the semiconductor wafer by means of the film-like adhesive in the dicing die-bonding sheet.

Next, the semiconductor wafer and the film adhesive on the support sheet are cut together using a dicing blade. Cutting a semiconductor wafer is also called singulation, and it is used to separate the semiconductor wafer into the target semiconductor chips. The film adhesive is cut along the periphery of the semiconductor chip. In this way, a semiconductor chip with a film-like adhesive can be obtained, and a group of semiconductor chips with a film-like adhesive can be obtained. The above-mentioned semiconductor chip with a film-like adhesive is a semiconductor chip and a cut film-like adhesive arranged on the inner surface of the semiconductor chip. The above-mentioned group of semiconductor chips with a film-like adhesive is a group of semiconductor chips with a film-like adhesive that maintains multiple semiconductor chips with a film-like adhesive in an orderly arranged state on a support sheet.

Next, the semiconductor chip with the film-like adhesive is pulled off the support sheet and picked up. When using a support sheet with a curable adhesive layer, curing the adhesive layer reduces the stickiness, making it easier to pick up. Through the above operation, a semiconductor chip with a film-like adhesive is obtained for use in semiconductor device manufacturing.

As another example of a method for manufacturing semiconductor chips with a film-like adhesive, the following method can be cited. First, back grinding tape (sometimes also called "surface protection tape") is attached to the circuit-forming surface of a semiconductor wafer. Next, a predetermined division location is set within the semiconductor wafer, and laser light is irradiated with a focused area within the location, thereby forming a modified layer within the semiconductor wafer. Next, a grinder is used to grind the inner surface of the semiconductor wafer to adjust the thickness of the semiconductor wafer to the target value. By utilizing the force applied to the semiconductor wafer during grinding, the semiconductor wafer is divided (singulated) at the location where the modified layer is formed, thereby producing multiple semiconductor chips. This method of separating semiconductor wafers with the formation of a modified layer is called stealth dicing (a registered trademark). It is fundamentally different from laser dicing, which gradually cuts the semiconductor wafer from the surface while irradiating the semiconductor wafer with laser light to remove the irradiated area.

Furthermore, a piece of adhesive is attached to the ground inner surface (in other words, the ground surface) of each of the semiconductor wafers secured to the back grinding tape. The adhesive can be similar to the dicing adhesive described above. While the adhesive is not used for dicing the semiconductor wafer, it can sometimes be designed to have the same structure as the dicing adhesive. The adhesive is also attached to the inner surface of the semiconductor wafer using a film-like adhesive within the adhesive.

After removing the back grinding tape from the semiconductor wafer, the adhesive wafer is cooled while being stretched in a direction parallel to the surface of the adhesive wafer (e.g., the surface where the film adhesive is attached to the semiconductor wafer), thereby cutting the film adhesive along the periphery of the semiconductor wafer. This operation results in a semiconductor wafer with an adhesive film, which comprises a semiconductor wafer and the cut film adhesive disposed on the inner surface of the semiconductor wafer.

Then, similar to the above-mentioned case of using a blade for cutting, the semiconductor wafer with a film-shaped adhesive is pulled off from the support sheet and picked up, thereby obtaining a semiconductor wafer with a film-shaped adhesive for manufacturing a semiconductor device.

Both dicing and bonding wafers can be used to manufacture semiconductor wafers with film adhesives, ultimately enabling the manufacture of target semiconductor devices. In this specification, both dicing and bonding wafers are referred to as "semiconductor device manufacturing sheets."

For example, a dicing tape (equivalent to the aforementioned dicing tape wafer) has been disclosed as a sheet for semiconductor device manufacturing. This tape comprises a laminated structure in which a base layer (equivalent to the aforementioned support sheet) and an adhesive layer (equivalent to the aforementioned film-like adhesive) are in direct contact (see Patent Document 1). In this dicing tape, the 90-degree peeling force of the base layer and the adhesive layer at -15°C is adjusted to a specific range, making it possible to precisely separate the adhesive layer through expansion. Furthermore, the 90-degree peel force of the substrate layer and adhesive layer at 23°C is adjusted to a specific range. Therefore, when using this dicing tape, it is believed that semiconductor chips with adhesive layers (equivalent to the aforementioned semiconductor chips with film adhesives) can be picked up without difficulty. Furthermore, during the process leading up to the pick-up, the semiconductor wafer and the semiconductor chip can be prevented from peeling off from the adhesive layer.

In addition, adhesive chips are sometimes continuously attached to a long peeling film and then rolled into a roll for supply. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Publication No. 2018-56289.

[The problem that the invention aims to solve]

However, while the dicing tape disclosed in Patent Document 1 is suitable for stealth dicing (registered trademark), it is not suitable for blade dicing. Using this dicing tape for blade dicing easily generates whisker-like shavings (sometimes referred to in the art as "whiskers") from the substrate layer, degrading the dicing suitability when singulating semiconductor wafers.

The aforementioned adhesive layer (equivalent to the aforementioned film adhesive) is sometimes pre-pressed based on the shape of the semiconductor wafer, etc., to be used. The base layer (equivalent to the intermediate layer) can also be similarly press-processed. The remaining portion after the press-processing (the portion not attached to the periphery of the semiconductor wafer, etc.) is removed, resulting in a higher build-up of the laminate compared to the surrounding portions. However, the height differences caused by the thickness differences between the layers have the following problem: when the semiconductor device manufacturing sheet is rolled into a roll and supplied, the positions of the height differences deviate and overlap, which easily becomes the cause of the winding mark (also called "winding mark").

The object of the present invention is to provide a semiconductor device manufacturing sheet that has excellent semiconductor wafer separation suitability and suppresses the generation of winding marks. [Means for Solving the Problem]

[1] A sheet for manufacturing semiconductor devices, comprising: a label portion including a portion to be attached to a semiconductor wafer or semiconductor chip; and a peripheral portion provided at least a portion further outward from the label portion; the label portion and the peripheral portion comprising a substrate, an adhesive layer, an intermediate layer, and a film adhesive, and being formed by sequentially laminating the adhesive layer, the intermediate layer, the film adhesive, and a release film on the substrate; a groove on which the intermediate layer and the film adhesive are not deposited is provided between the label portion and the peripheral portion; the intermediate layer contains a non-silicone resin having a weight average molecular weight of not more than 100,000 as a main component. [2] The semiconductor device manufacturing sheet as described in [1] above, wherein the difference between the maximum thickness of the semiconductor device manufacturing sheet in the label portion and the maximum thickness of the semiconductor device manufacturing sheet in the peripheral portion is 3 μm or less. [3] The semiconductor device manufacturing sheet as described in [1] or [2] above, wherein the maximum width of the film adhesive in the label portion in a direction parallel to the attachment surface of the semiconductor wafer or semiconductor chip is 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. [4] The semiconductor device manufacturing sheet as described in any one of [1] to [3] above, wherein the thickness of the intermediate layer in the label portion is 15 μm or more and 80 μm or less. [5] The semiconductor device manufacturing sheet as described in any one of the above [1] to [4], wherein the content of the non-silicone resin in the intermediate layer is 50% by mass or more relative to the total mass of the intermediate layer. [6] The semiconductor device manufacturing sheet as described in any one of the above [1] to [5], wherein when the surface of the intermediate layer on the film adhesive side is analyzed by X-ray photoelectron spectroscopy, the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon is 1% to 20%. [7] The semiconductor device manufacturing sheet as described in any one of the above [1] to [6], wherein the non-silicone resin contains ethylene vinyl acetate copolymer. [8] The semiconductor device manufacturing sheet as described in any one of [1] to [7] above, wherein the intermediate layer contains an ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound; the content of the ethylene vinyl acetate copolymer in the intermediate layer is 90% by mass to 99.99% by mass relative to the total mass of the intermediate layer; and the content of the siloxane compound in the intermediate layer is 0.01% by mass to 10% by mass relative to the total mass of the intermediate layer. [9] The semiconductor device manufacturing sheet as described in any one of the above [1] to [8] is used for cold expansion, wherein the cold expansion is performed by expanding the semiconductor device manufacturing sheet at a temperature lower than room temperature in a direction parallel to the plane of the semiconductor device manufacturing sheet, thereby cutting the film-like adhesive. [10] The semiconductor device manufacturing sheet as described in any one of the above [1] to [9] is a roll body formed by rolling the strip-shaped release film with the label portion and the peripheral portion as the inner side. [11] A method for manufacturing a semiconductor device manufacturing sheet as described in any one of [1] to [10] above, comprising: a lamination step of laminating a first intermediate laminate having the substrate and the adhesive layer and a second intermediate laminate having the intermediate layer and the film adhesive; and a processing step of removing a portion of the film adhesive from the second intermediate laminate by punching, thereby forming the label portion, the groove, and the peripheral portion. [12] A method for manufacturing a semiconductor chip with a film-like adhesive, comprising the following steps: a step of laminating a semiconductor wafer or a semiconductor chip on the side of the film-like adhesive of the semiconductor device manufacturing sheet described in any one of [1] to [10] to obtain a laminate; and a step of cutting the film-like adhesive, or the semiconductor wafer and the film-like adhesive, along the periphery of the semiconductor chip to obtain a semiconductor chip with a film-like adhesive. [Effect of the invention]

According to this aspect, a sheet for semiconductor device manufacturing can be provided that has excellent semiconductor wafer separation suitability and suppresses the generation of winding marks.

◇Sheet for manufacturing semiconductor devices A sheet for manufacturing semiconductor devices according to one embodiment of the present invention comprises: a label portion comprising a portion to be attached to a semiconductor wafer or a semiconductor chip; and a peripheral portion disposed at least a portion further outward than the label portion; the label portion and the peripheral portion comprise a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and are constructed by sequentially stacking the adhesive layer, the intermediate layer, the film-like adhesive, and a release film on the substrate; a groove is provided between the label portion and the peripheral portion on which the intermediate layer and the film-like adhesive are not stacked; the intermediate layer contains a non-silicone resin having a weight-average molecular weight of not more than 100,000 as a main component.

The semiconductor device manufacturing sheet of this embodiment has the aforementioned peripheral portion, and thus, even when the semiconductor device manufacturing sheet is rolled into a roll and supplied in the form of a roll, the generation of a winding mark is suppressed.

Even if a conventional semiconductor device manufacturing sheet has a structure outside the label portion, it is composed solely of a base material and an adhesive layer. In contrast, the semiconductor device manufacturing sheet of the embodiment has an outer peripheral portion with the same layer structure as the label portion. This allows the label portion to be stacked higher than the surrounding portion (groove) during stamping, and the height difference caused by the difference in total thickness between the label portion and the groove is less likely to affect the overlapped portion during winding, thus suppressing the formation of winding marks. Winding marks can be confirmed by visually observing the overlapping portion of the height difference in the film adhesive, etc., after unwinding the roll. The confirmation of the winding mark is preferably carried out near the core of the roll where the winding mark is easily generated.

Regarding the position of the peripheral portion, "outer than the label portion" refers to a position parallel to the surface of the film adhesive relative to the label portion. Regarding the position of the groove, "between the label portion and the peripheral portion" refers to a position parallel to the surface of the film adhesive relative to the label portion.

By including the intermediate layer, the semiconductor device manufacturing sheet of this embodiment can easily prevent the blade from reaching the substrate when the sheet is used to cut wafers for dicing. This can suppress the generation of whisker-like chips (also known as "whiskers"; hereinafter, not limited to those originating from the substrate, sometimes simply referred to as "chips") from the substrate. Furthermore, by using a non-silicone resin with a weight-average molecular weight of 100,000 or less, particularly a resin with a weight-average molecular weight of 100,000 or less, as the main component of the intermediate layer cut by the blade, the generation of chips from the intermediate layer can also be suppressed.

The semiconductor device manufacturing sheet of this embodiment, by including the aforementioned intermediate layer, allows for the subsequent stretching (so-called expansion) of the semiconductor device manufacturing sheet in a direction parallel to the surface of the semiconductor device manufacturing sheet (e.g., the surface where the film adhesive is attached to the semiconductor wafer) when the semiconductor device manufacturing sheet is used as a wafer bonder for dicing (stealth dicing (registered trademark)) accompanied by the formation of a modified layer in the semiconductor wafer. This allows the film adhesive to be precisely cut at the target location, thus suppressing severing defects. This is presumably because the intermediate layer allows the stress of the expansion to be efficiently utilized to expand the inter-wafer distance.

Thus, the semiconductor device manufacturing sheet of this embodiment can suppress the generation of cutting chips from the substrate and the intermediate layer during blade dicing, can suppress the cutting defects of the film adhesive during the aforementioned expansion, and has the characteristic of suppressing the generation of defects when dividing semiconductor wafers, and has excellent semiconductor wafer dividing suitability.

Unless otherwise specified, the "weight average molecular weight" in this specification refers to the polystyrene-equivalent value measured by gel permeation chromatography (GPC).

The method of using the semiconductor device manufacturing sheet of this embodiment will be described in detail below.

The following is a detailed description of the semiconductor device manufacturing sheet according to this embodiment, with reference to the accompanying drawings. Note that the following drawings sometimes show enlarged portions of essential components for easier understanding of the features of the embodiment, and the dimensional ratios of the components may not necessarily be the same as in actual figures.

FIG1 is a schematic cross-sectional view of a semiconductor device manufacturing sheet according to one embodiment of the present invention, and FIG2 is a plan view of the semiconductor device manufacturing sheet shown in FIG1 . FIG1 is a cross-sectional view taken along line A-A' of FIG2 . In the figures following FIG2 , components identical to those shown in previously described figures are designated by the same reference numerals as in the previously described figures, and detailed descriptions are omitted.

The semiconductor device manufacturing sheet 101 shown here includes: a label portion 30, including a portion to be attached to a semiconductor wafer or semiconductor chip; and a peripheral portion 32, which is provided at least in a portion further outward than the label portion.

The label portion 30 and peripheral portion 32 comprise a substrate 11, an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14. The adhesive layer 12, intermediate layer 13, the aforementioned film-like adhesive 14, and the release film 15 are sequentially laminated on the substrate 11. In other words, the label portion 30 and peripheral portion 32 are the areas of the semiconductor device manufacturing sheet 101 where the substrate 11, adhesive layer 12, intermediate layer 13, and film-like adhesive 14 are laminated in the thickness direction.

The thickness and composition of the common layers of the label portion 30 and the peripheral portion 32 may be the same or different. To minimize the impact of the height difference caused by the difference in the total thickness between the label portion 30 and the groove 34 and effectively prevent the occurrence of curling marks, the thickness and composition of the substrate 11, adhesive layer 12, intermediate layer 13, and film adhesive 14 of the label portion 30 and the peripheral portion 32 are preferably the same.

The label portion 30 preferably has a shape and dimensions such that, when a semiconductor wafer or chip is attached, it does not protrude from the label portion. The outer periphery of the semiconductor wafer or chip attached to the label portion, when viewed from above, is preferably located inward of the outer periphery of the film adhesive of the label portion, when viewed from above. Regarding these dimensions, preferred values for the width of the intermediate layer and film adhesive that constitute the label portion will be discussed later.

Between the label portion 30 and the peripheral portion 32, a trench 34 is provided where the intermediate layer 13 and film-like adhesive 14 are not deposited. However, the release film 15 is deposited across the label portion 30, the peripheral portion 32, and the trench 34, serving to connect the label portion 30 and the peripheral portion 32. Because the intermediate layer 13 and film-like adhesive 14 are not deposited in the trench 34, the total thickness of the semiconductor device manufacturing sheet 101 in the trench 34 portion is thinner than the total thickness of the semiconductor device manufacturing sheet 101 in the label portion 30 and the peripheral portion 32 portion. By forming the groove 34 around the label portion 30, the manufacturing of the semiconductor chip with a film adhesive, including attaching a semiconductor wafer or semiconductor chip to the label portion, is facilitated.

As described above, from the perspective of effectively suppressing the occurrence of winding marks by reducing the effect of the height difference caused by the difference in the combined thickness of the label portion 30 and the groove 34 through the peripheral portion 32, a smaller difference in thickness between the label portion and the peripheral portion is preferred. The difference between the maximum thickness _H30 of the semiconductor device manufacturing sheet 101 at the label portion 30 and the maximum thickness _H32 of the semiconductor device manufacturing sheet 101 at the peripheral portion 32 is preferably 3 μm or less, more preferably 2 μm or less, and even more preferably 1 μm or less. In Figure 1, _H30 and _H32 represent the same thickness value.

Similarly, to effectively suppress the occurrence of curling marks, the width of the groove 34 between the label portion 30 and the peripheral portion 32 is preferably small. The minimum width W ₃₄ of the groove 34 is preferably 50 mm or less, more preferably 0.5 mm to 50 mm, and even more preferably 1 mm to 40 mm. The minimum width of the groove is defined as the length of a straight line connecting any point on the label portion's outline with any point on the peripheral portion's outline at the shortest distance.

In the label portion 30 and peripheral portion 32 of the semiconductor device manufacturing sheet 101, an adhesive layer 12 is provided on one surface 11a of the substrate 11 (sometimes referred to as the "first surface" in this specification). An intermediate layer 13 is provided on the surface 12a of the adhesive layer 12 opposite to the side on which the substrate 11 is provided (sometimes referred to as the "first surface" in this specification). A film-like adhesive 14 is provided on the surface 13a of the intermediate layer 13 opposite to the side on which the adhesive layer 12 is provided (sometimes referred to as the "first surface" in this specification). A release film 15 is provided on the first surface 14a of the film-like adhesive 14. In this manner, the semiconductor device manufacturing sheet 101 is formed by laminating the base material 11, the adhesive layer 12, the intermediate layer 13, the film-like adhesive 14, and the release film 15 in this order in the thickness direction.

The semiconductor device manufacturing sheet 101 is used by attaching the first surface 14a of the film adhesive 14 in at least a portion of the label portion 30 of the semiconductor device manufacturing sheet 101 to the inner surface of a semiconductor wafer, a semiconductor chip, or an incompletely divided semiconductor wafer (not shown) with the release film 15 removed.

In this specification, in any case of a semiconductor wafer or a semiconductor chip, the side on which a circuit is formed is referred to as the "circuit forming surface", and the surface opposite to the circuit forming surface is referred to as the "inner surface".

In this specification, a laminate having a substrate and an adhesive layer laminated in the thickness direction without an intermediate layer is sometimes referred to as a "support sheet." In Figure 1, reference numeral 1 indicates a support sheet. Furthermore, a laminate having a substrate, an adhesive layer, and an intermediate layer laminated in this order in the thickness direction is sometimes referred to as a "laminated sheet." In Figure 1, reference numeral 10 indicates a laminate. The laminate comprising the support sheet and intermediate layer is included in the laminate sheet.

When viewed from above, the intermediate layer 13 and the film adhesive 14 of the label portion 30 are both circular in plan view, and the diameter of the intermediate layer 13 is the same as the diameter of the film adhesive 14. Furthermore, in the label portion 30 of the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film adhesive 14 are arranged so that their centers coincide with each other. In other words, the positions of the outer peripheries of the intermediate layer 13 and the film adhesive 14 are radially aligned.

The areas of first surface 13a of intermediate layer 13 and first surface 14a of adhesive film 14 in label portion 30 are both smaller than first surface 12a of adhesive layer 12. Furthermore, the maximum width _W13 (i.e., diameter) of intermediate layer 13 and the maximum width _W14 (i.e., diameter) of adhesive film 14 are both smaller than the maximum widths of adhesive layer 12 and substrate 11. Therefore, in semiconductor device manufacturing sheet 101, a portion of first surface 12a of adhesive layer 12 is not covered by intermediate layer 13 and adhesive film 14. The peeling film 15 is deposited on the first surface 12a of the adhesive layer 12 in direct contact with the area where the intermediate layer 13 and the film-like adhesive 14 are not deposited. When the peeling film 15 is removed, this area is exposed (hereinafter, in this specification, this area is sometimes referred to as the "non-deposited area"). Furthermore, in the semiconductor device manufacturing sheet 101 having the peeling film 15, the area of the adhesive layer 12 not covered by the intermediate layer 13 and the film-like adhesive 14 may or may not have the peeling film 15 deposited thereon, as shown here.

The semiconductor device manufacturing sheet 101, which is attached to the semiconductor wafer or semiconductor chip by the film adhesive 14 without cutting the film adhesive 14, can be fixed by attaching a portion of the aforementioned non-laminated area of the adhesive layer 12 of the semiconductor device manufacturing sheet 101 to a jig such as a ring frame used to secure the semiconductor wafer. Therefore, there is no need to provide a jig adhesive layer on the semiconductor device manufacturing sheet 101 to secure the semiconductor device manufacturing sheet 101 to the jig. Furthermore, since no jig adhesive layer is required, the semiconductor device manufacturing sheet 101 can be manufactured inexpensively and efficiently.

Thus, semiconductor device manufacturing sheet 101 advantageously does not include a jig adhesive layer, but it may also include a jig adhesive layer. In this case, the jig adhesive layer is provided in a region near the periphery of the surface of any layer constituting semiconductor device manufacturing sheet 101. Examples of such regions include the aforementioned non-laminated region of first surface 12a of adhesive layer 12.

The jig adhesive layer may be a known one, and may be, for example, a single-layer structure containing an adhesive component, or a multi-layer structure in which layers containing an adhesive component are laminated on both sides of a sheet serving as a core material.

Furthermore, as described later, when the conductive device manufacturing sheet 101 is stretched (so-called expanded) in a direction parallel to the surface of the semiconductor device manufacturing sheet 101 (e.g., the first surface 12a of the adhesive layer 12), the presence of the non-laminated region on the first surface 12a of the adhesive layer 12 facilitates expansion of the semiconductor device manufacturing sheet 101. Furthermore, not only can the film adhesive 14 be easily cut, but peeling of the intermediate layer 13 and the film adhesive 14 from the adhesive layer 12 can also be suppressed.

The first surface 12a of the adhesive layer 12 and the first surface 11a of the substrate 11 of the label portion 30 are both smaller in area than the first surface 15a of the release film 15. Furthermore, the maximum width (i.e., diameter) of the adhesive layer 12 and the maximum width (i.e., diameter) of the substrate 11 are both smaller than the maximum width of the release film 15. Therefore, in the semiconductor device manufacturing sheet 101, a portion of the release film 15 is not covered by the adhesive layer 12 and the substrate 11.

The adhesive layer 12 and substrate 11 of the label portion 30 are both circular in plan view when viewed from above, and the adhesive layer 12 and substrate 11 have the same diameter. Furthermore, in the label portion 30 of the semiconductor device manufacturing sheet 101, the adhesive layer 12 and substrate 11 are arranged so that their centers coincide with each other. In other words, the adhesive layer 12 and substrate 11 are arranged so that their outer peripheries coincide with each other in the radial direction.

FIG2 is a plan view of the semiconductor device manufacturing sheet shown in FIG1 . The semiconductor device manufacturing sheet 101 includes a label portion 30 and a peripheral portion 32 disposed at least partially outside the label portion 30. The circular support sheet 1, the circular intermediate layer 13 constituting the label portion 30, and the film-like adhesive 14 are concentrically deposited. A groove 34 is formed around the label portion 30. The groove 34 includes a portion where the release film 15 and the support sheet 1 are deposited, as well as an exposed portion of the release film 15 where the support sheet 1 is not deposited.

In the semiconductor device manufacturing sheet 101, the intermediate layer 13 contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component.

The semiconductor device manufacturing sheet of this embodiment is not limited to that shown in FIG. 1 and FIG. 2 , and a portion of the structure shown in FIG. 1 and FIG. 2 may be changed, deleted, or added without impairing the effectiveness of the present invention.

For example, the semiconductor device manufacturing sheet of this embodiment may include other layers that do not correspond to any of the substrate, adhesive layer, intermediate layer, film-shaped adhesive, release film, and jig adhesive layer. However, the semiconductor device manufacturing sheet of this embodiment preferably includes an adhesive layer in direct contact with the substrate, an intermediate layer in direct contact with the adhesive layer, a film-shaped adhesive in direct contact with the intermediate layer, and a release film in direct contact with the film-shaped adhesive, as shown in FIG1 .

For example, in the semiconductor device manufacturing sheet of this embodiment, the planar shapes of the intermediate layer and film-like adhesive in the label portion may be shapes other than circular, and the planar shapes of the intermediate layer and film-like adhesive may be the same or different. Furthermore, in the label portion, the area of the first surface of the intermediate layer and the first surface of the film-like adhesive are preferably both smaller than the area of the surface of the layer closer to the substrate (e.g., the first surface of the adhesive layer), and may be the same or different. Furthermore, the outer peripheries of the intermediate layer and film-like adhesive may or may not be radially aligned. The outer periphery of the intermediate layer and the film-like adhesive in top view are preferably positioned inward relative to the outer periphery of at least one surface of a layer located closer to the substrate than the intermediate layer and the film-like adhesive. For example, the outer periphery of the intermediate layer and the film-like adhesive in top view are preferably positioned inward relative to the outer periphery of the support sheet in top view. Next, the various layers constituting the semiconductor device manufacturing sheet of this embodiment will be described in detail.

○Substrate The aforementioned substrate is in sheet or film form. The aforementioned substrate is preferably formed of various resins. Specifically, for example, polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene butylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyacrylic urethane, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-(meth)acrylic acid copolymer and ethylene copolymers other than ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated products, modified products, crosslinked products or copolymers of any of these resins, etc.

Furthermore, in this specification, the term "(meth)acrylic acid" encompasses both "acrylic acid" and "methacrylic acid." Terms similar to (meth)acrylic acid, such as "(meth)acrylate," encompass both "acrylate" and "methacrylate," and "(meth)acryl," encompass both "acryl" and "methacryl."

The resin constituting the substrate may be only one type or two or more types. In the case of two or more types, the combination and ratio of these resins can be arbitrarily selected.

The substrate may consist of only a single layer (single layer) or may consist of two or more layers. When the substrate consists of multiple layers, these layers may be identical or different, and the combination of these layers is not particularly limited as long as it does not impair the effectiveness of the present invention. In this specification, not limited to the substrate, the phrase "multiple layers may be identical or different" means "all layers may be identical, all layers may be different, or only some layers may be different." Furthermore, the phrase "multiple layers are different" means "each layer differs in at least one of its constituent material and thickness."

The thickness of the substrate can be appropriately selected depending on the intended purpose, preferably ranging from 50 μm to 300 μm, and more preferably from 60 μm to 150 μm. A substrate thickness above the aforementioned lower limit provides a more stable substrate structure. A substrate thickness below the aforementioned upper limit facilitates cutting of the film adhesive during blade dicing and the aforementioned expansion of the semiconductor device manufacturing sheet. The term "substrate thickness" herein refers to the thickness of the entire substrate. For example, the term "thickness" for a multi-layer substrate refers to the combined thickness of all layers comprising the substrate. Unless otherwise specified, "thickness" in this manual refers to the average value obtained by measuring the thickness at five randomly selected locations using a constant-pressure thickness gauge in accordance with JIS (Japanese Industrial Standards) K7130.

To enhance adhesion with other layers such as adhesive layers applied to the substrate, the substrate surface may be subjected to the following treatments: roughening by spraying, solvent treatment, embossing, etc.; oxidation treatments such as coma discharge treatment, electron beam irradiation, plasma treatment, ozone-UV irradiation, flame treatment, chromic acid treatment, and hot air treatment. Furthermore, the substrate surface may be primed. Furthermore, the substrate may have an antistatic coating; or a layer to prevent the substrate from adhering to other sheets or to the adsorption platform when stacking adhesive wafers for storage.

In addition to the aforementioned resin and other main components, the substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.

The optical properties of the substrate are not particularly limited as long as they do not impair the efficacy of the present invention. For example, the substrate may be capable of transmitting laser light or energy beams.

The substrate can be manufactured using a known method. For example, a substrate containing a resin (using a resin as a constituent material) can be manufactured by shaping the aforementioned resin or a resin composition containing the aforementioned resin.

○ Adhesive Layer: The adhesive layer is in sheet or film form and contains an adhesive. The adhesive layer can be formed using an adhesive composition containing the aforementioned adhesive. For example, the adhesive composition can be applied to the surface where the adhesive layer is to be formed and dried as needed to form the adhesive layer at the target site.

The adhesive composition can be applied using known methods, such as air knife coaters, blade coaters, rod coaters, gravure coaters, roll coaters, knife-roll coaters, curtain coaters, die coaters, doctor blade coaters, screen coaters, Mayer rod coaters, and touch-touch coaters.

The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, heat drying is preferred. In this case, for example, drying at 70°C to 130°C for 10 seconds to 5 minutes is preferred.

Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins, with acrylic resins being preferred.

Furthermore, in this specification, the term "adhesive resin" includes both adhesive resins and adhesive resins. For example, the aforementioned adhesive resins include not only resins that have adhesive properties themselves, but also resins that develop adhesive properties by combining with other ingredients such as additives, or resins that develop adhesive properties by being triggered by heat or water.

The adhesive layer can be either hardening or non-hardening, for example, it can be either energy-beam hardening or non-energy-beam hardening. A hardening adhesive layer can easily adjust the physical properties before and after hardening.

In this specification, "energy rays" refers to electromagnetic waves or charged particle beams containing energy quanta. Examples of energy rays include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be irradiated using, for example, high-pressure mercury lamps, fusion lamps, xenon lamps, black lights, or LED (Light Emitting Diode) lamps. Electron beams can be generated by, for example, electron beam accelerators. Furthermore, in this specification, "energy ray-hardenable" refers to the property of being hardened by irradiation with energy rays, and "non-energy ray-hardenable" refers to the property of not being hardened even by irradiation with energy rays.

The adhesive layer may consist of only one layer (single layer) or may consist of two or more layers. In the case of a plurality of layers, these layers may be the same or different, and the combination of these layers is not particularly limited.

The thickness of the adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, and even more preferably 1 μm to 30 μm. Herein, the term "thickness of the adhesive layer" refers to the thickness of the adhesive layer as a whole. For example, the term "thickness" of a multi-layer adhesive layer refers to the combined thickness of all layers comprising the adhesive layer.

The substrate and the adhesive layer may have the same shape, but preferably, the substrate and the adhesive layer are laminated so that their peripheries are consistent when viewed from above.

The optical properties of the adhesive layer are not particularly limited as long as they do not impair the efficacy of the present invention. For example, the adhesive layer may also be capable of transmitting energy beams. Next, the adhesive composition described above will be described. The adhesive composition described below may contain, for example, one or more of the following components, with the total content (mass %) not exceeding 100 mass %.

[Adhesive composition] When the adhesive layer is energy ray-curable, the adhesive composition containing the energy ray-curable adhesive, i.e., the energy ray-curable adhesive composition, may include, for example, the following adhesive compositions: Adhesive composition (I-1) containing a non-energy ray-curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-1a)"), and an energy ray-curable adhesive resin (I-1a). an adhesive composition (I-2) comprising an energy ray-curable adhesive resin (I-2a) having an unsaturated group introduced into the side chain of a non-energy ray-curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-2a)"); and an adhesive composition (I-3) comprising the aforementioned adhesive resin (I-2a) and the energy ray-curable compound.

[Adhesive Composition (I-1)] As described above, the adhesive composition (I-1) contains a non-energy ray-curable adhesive resin (I-1a) and an energy ray-curable compound.

[Adhesive Resin (I-1a)] The adhesive resin (I-1a) is preferably an acrylic resin. Examples of the acrylic resin include acrylic polymers having at least one constituent unit derived from an alkyl (meth)acrylate. The acrylic resin may contain only one constituent unit or two or more. In the case of two or more constituent units, the combination and ratio of these constituent units can be arbitrarily selected.

The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these adhesive resins (I-1a) can be arbitrarily selected.

In the adhesive composition (I-1), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-1) is preferably 5% by mass to 99% by mass, more preferably 10% by mass to 95% by mass, and even more preferably 15% by mass to 90% by mass.

[Energy Beam-Curing Compound] Examples of the aforementioned energy beam-curing compound contained in the adhesive composition (I-1) include monomers or oligomers having energy beam-polymerizable unsaturated groups and capable of being cured by energy beam irradiation. Examples of energy beam-curing compounds as monomers include polyvalent (meth)acrylates such as trihydroxymethylpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylates; polyester (meth)acrylates; polyether (meth)acrylates; and epoxy (meth)acrylates. Among energy-beam-curable compounds, oligomers include, for example, oligomers obtained by polymerizing the monomers listed above. Urethane (meth)acrylates and urethane (meth)acrylate oligomers are preferred energy-beam-curable compounds because they have relatively high molecular weights and are less likely to reduce the storage elastic modulus of the adhesive layer.

The adhesive composition (I-1) may contain only one type of the aforementioned energy ray-curable compound or two or more types. In the case of two or more types, the combination and ratio of these energy ray-curable compounds may be arbitrarily selected.

In the adhesive composition (I-1), the content of the energy ray-curable compound relative to the total mass of the adhesive composition (I-1) is preferably 1 mass % to 95 mass %, more preferably 5 mass % to 90 mass %, and even more preferably 10 mass % to 85 mass %.

[Crosslinking Agent] When the aforementioned acrylic polymer having constituent units derived from a functional group-containing monomer in addition to constituent units derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-1) preferably further contains a crosslinking agent.

The crosslinking agent reacts with the functional groups to crosslink the adhesive resins (I-1a). Examples of crosslinking agents include: isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylene diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (crosslinking agents having an aziridine group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate-based crosslinking agents (crosslinking agents having an isocyanuric acid skeleton). From the perspectives of increasing the cohesive force of the adhesive and thus the adhesion of the adhesive layer, and being easily available, the crosslinking agent is preferably an isocyanate crosslinking agent.

The adhesive composition (I-1) may contain only one type of crosslinking agent or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents can be arbitrarily selected.

When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and even more preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[Photopolymerization Initiator] The adhesive composition (I-1) may further contain a photopolymerization initiator. The adhesive composition (I-1) containing a photopolymerization initiator will undergo a sufficient curing reaction even when exposed to relatively low-energy radiation, such as ultraviolet light.

Examples of the photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, benzoin dimethyl ketal and other benzoin compounds; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one; bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, 2,4,6-trimethylbenzyldiphenylphosphine oxide; Examples of the photopolymerization initiator include acylphosphine oxide compounds; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanone compounds such as thiothionone; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4-diethylthiothionone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; and 2-chloroanthraquinone. In addition, as the photopolymerization initiator, quinone compounds such as 1-chloroanthraquinone and photosensitizers such as amines may also be used.

The adhesive composition (I-1) may contain only one type of photopolymerization initiator or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[Other Additives] The adhesive composition (I-1) may contain other additives that are not equivalent to any of the above-mentioned components, as long as they do not impair the efficacy of the present invention. Examples of such other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, viscosity-increasing agents, reaction retarders, crosslinking promoters (catalysts), and other commonly known additives.

Furthermore, the so-called reaction retarder is, for example, a component used to inhibit unintended cross-linking reactions in the adhesive composition (I-1) during storage due to the action of a catalyst mixed into the adhesive composition (I-1). Examples of reaction retarder include those that form chelate complexes by chelating the catalyst, and more specifically, those having two or more carbonyl groups (-C(=O)-) in one molecule.

The adhesive composition (I-1) may contain only one type of other additives or two or more types. In the case of two or more types, the combination and ratio of these other additives can be arbitrarily selected.

The content of other additives in the adhesive composition (I-1) is not particularly limited and can be appropriately selected according to their type.

[Solvent] The adhesive composition (I-1) may also contain a solvent. The inclusion of a solvent improves the adhesive composition (I-1)'s suitability for application to the intended surface.

The aforementioned solvent is preferably an organic solvent.

[Adhesive Composition (I-2)] As described above, the adhesive composition (I-2) comprises an energy-beam-curable adhesive resin (I-2a) having unsaturated groups introduced into the side chains of a non-energy-beam-curable adhesive resin (I-1a).

[Adhesive Resin (I-2a)] The adhesive resin (I-2a) is obtained, for example, by reacting an unsaturated group-containing compound having an energy-beam-polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

The unsaturated group-containing compound is a compound having, in addition to the energy-beam-polymerizable unsaturated group, a group capable of bonding to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a). Examples of the energy-beam-polymerizable unsaturated group include (meth)acryloyl, ethenyl, and allyl (2-propenyl), with (meth)acryloyl being preferred. Examples of groups capable of bonding to the functional groups in the adhesive resin (I-1a) include isocyanate and glycidyl groups capable of bonding to hydroxyl or amine groups, and hydroxyl and amine groups capable of bonding to carboxyl or epoxy groups.

Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these adhesive resins (I-2a) can be arbitrarily selected.

In the adhesive composition (I-2), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-2) is preferably 5% by mass to 99% by mass, more preferably 10% by mass to 95% by mass, and even more preferably 10% by mass to 90% by mass.

[Crosslinking Agent] For example, when the adhesive resin (I-2a) is the same acrylic polymer as in the adhesive resin (I-1a) having constituent units derived from functional group-containing monomers, the adhesive composition (I-2) may further contain a crosslinking agent.

The aforementioned crosslinking agents in adhesive composition (I-2) may be the same crosslinking agents as those in adhesive composition (I-1). Adhesive composition (I-2) may contain a single crosslinking agent or two or more. In the case of two or more crosslinking agents, the combination and ratio of these crosslinking agents may be arbitrarily selected.

When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and even more preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Photopolymerization Initiator] The adhesive composition (I-2) may further contain a photopolymerization initiator. The adhesive composition (I-2) containing a photopolymerization initiator will undergo a sufficient curing reaction even when exposed to relatively low-energy radiation, such as ultraviolet light.

The aforementioned photopolymerization initiator in adhesive composition (I-2) can be the same as the photopolymerization initiator in adhesive composition (I-1). Adhesive composition (I-2) may contain a single photopolymerization initiator or two or more. In the case of two or more photopolymerization initiators, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Other Additives and Solvents] Adhesive composition (I-2) may contain other additives that are not equivalent to any of the above-mentioned components, as long as they do not impair the efficacy of the present invention. Additionally, adhesive composition (I-2) may also contain a solvent for the same purpose as adhesive composition (I-1). Examples of the aforementioned other additives and solvents in adhesive composition (I-2) include the same other additives and solvents as those in adhesive composition (I-1). The number of other additives and solvents contained in adhesive composition (I-2) may be one or more. In the case of two or more, the combination and ratio of these other additives and solvents may be arbitrarily selected. The contents of other additives and solvents in the adhesive composition (I-2) are not particularly limited and can be appropriately selected according to their types.

[Adhesive Composition (I-3)] As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray-curable compound.

In the adhesive composition (I-3), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-3) is preferably 5 mass% to 99 mass%, more preferably 10 mass% to 95 mass%, and even more preferably 15 mass% to 90 mass%.

[Energy Beam-Curing Compound] Examples of the aforementioned energy-beam-curing compound contained in adhesive composition (I-3) include monomers and oligomers having energy-beam-polymerizable unsaturated groups and capable of being cured by energy beam irradiation. Examples of the energy-beam-curing compound include the same compounds as those contained in adhesive composition (I-1). Adhesive composition (I-3) may contain only one or two or more of the aforementioned energy-beam-curing compounds. In the case of two or more, the combination and ratio of these energy-beam-curing compounds may be arbitrarily selected.

In the adhesive composition (I-3), the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and even more preferably 0.05 to 100 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Photopolymerization Initiator] The adhesive composition (I-3) may further contain a photopolymerization initiator. Adhesive composition (I-3) containing a photopolymerization initiator will fully undergo a curing reaction even when exposed to relatively low-energy radiation, such as ultraviolet light.

Examples of the aforementioned photopolymerization initiator in adhesive composition (I-3) include the same ones as those in adhesive composition (I-1). Adhesive composition (I-3) may contain a single photopolymerization initiator or two or more. In the case of two or more photopolymerization initiators, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the aforementioned energy ray-curable compound.

[Other Additives and Solvents] Adhesive composition (I-3) may also contain other additives that are not equivalent to any of the above-mentioned components, as long as they do not impair the efficacy of the present invention. Additionally, adhesive composition (I-3) may also contain a solvent for the same purpose as adhesive composition (I-1). Examples of the aforementioned other additives and solvents in adhesive composition (I-3) include the same other additives and solvents as those in adhesive composition (I-1). The number of other additives and solvents contained in adhesive composition (I-3) may be one or more. In the case of two or more, the combination and ratio of these other additives and solvents may be arbitrarily selected. The contents of other additives and solvents in the adhesive composition (I-3) are not particularly limited and can be appropriately selected according to their types.

[Adhesive Compositions Other Than Adhesive Compositions (I-1) to (I-3)] This section has primarily described adhesive composition (I-1), adhesive composition (I-2), and adhesive composition (I-3). However, the ingredients described herein also apply to all adhesive compositions other than these three adhesive compositions (referred to in this manual as "adhesive compositions other than adhesive composition (I-1) to (I-3)").

Adhesive compositions other than adhesive compositions (I-1) to (I-3) include not only energy-beam-curable adhesive compositions but also non-energy-beam-curable adhesive compositions. Examples of non-energy-beam-curable adhesive compositions include adhesive composition (I-4) containing a non-energy-beam-curable adhesive resin (I-1a) such as an acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, or ester resin. Preferably, the adhesive composition contains an acrylic resin.

Adhesive compositions other than adhesive composition (I-1) to adhesive composition (I-3) preferably contain one or more crosslinking agents, and the content of the crosslinking agent can be the same as that of the above-mentioned adhesive composition (I-1) and the like.

[Adhesive Composition (I-4)] Preferred adhesive compositions (I-4) include, for example, those containing the aforementioned adhesive resin (I-1a) and a crosslinking agent.

[Adhesive Resin (I-1a)] The adhesive resin (I-1a) in the adhesive composition (I-4) can be the same as the adhesive resin (I-1a) in the adhesive composition (I-1). The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be a single type or two or more types. In the case of two or more types, the combination and ratio of these adhesive resins (I-1a) can be arbitrarily selected.

In the adhesive composition (I-4), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-4) is preferably 5% by mass to 99% by mass, more preferably 10% by mass to 95% by mass, and even more preferably 15% by mass to 90% by mass.

[Crosslinking Agent] When the aforementioned acrylic polymer having constituent units derived from a functional group-containing monomer in addition to constituent units derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-4) preferably further contains a crosslinking agent.

As crosslinking agents in adhesive composition (I-4), the same crosslinking agents as those in adhesive composition (I-1) can be exemplified. Adhesive composition (I-4) may contain a single crosslinking agent or two or more. In the case of two or more crosslinking agents, the combination and ratio of these crosslinking agents can be arbitrarily selected.

In the adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and even more preferably 0.1 to 10 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[Other Additives and Solvents] Adhesive composition (I-4) may also contain other additives that are not equivalent to any of the above-mentioned components, as long as they do not impair the efficacy of the present invention. In addition, adhesive composition (I-4) may also contain a solvent for the same purpose as adhesive composition (I-1). Examples of the aforementioned other additives and solvents in adhesive composition (I-4) include the same other additives and solvents as those in adhesive composition (I-1). The number of other additives and solvents contained in adhesive composition (I-4) may be one or more. In the case of two or more, the combination and ratio of these other additives and solvents may be arbitrarily selected. The contents of other additives and solvents in the adhesive composition (I-4) are not particularly limited and can be appropriately selected according to their types.

[Adhesive Composition Production Method] Adhesive compositions (I-1) to (I-3) or adhesive compositions (I-4) other than (I-1) to (I-3) are obtained by mixing the aforementioned adhesive and, as needed, other components other than the aforementioned adhesive, such as the components that constitute the adhesive composition. The order of addition of the components during mixing is not particularly limited, and two or more components may be added simultaneously. When a solvent is used, the solvent may be mixed with any component other than the solvent to pre-dilute the component before use, or the solvent and the components may be mixed without pre-diluting any component other than the solvent. The method for mixing the ingredients during preparation is not particularly limited and can be appropriately selected from known methods, such as those described below: mixing by rotating a stirrer or impeller, mixing using a mixer, or mixing by applying ultrasonic waves. The temperature and time for adding and mixing the ingredients are not particularly limited, and can be adjusted appropriately as long as they do not degrade the ingredients. The temperature is preferably between 15°C and 30°C.

○ Intermediate Layer and Intermediate Layer-Forming Composition: The intermediate layer is in sheet or film form and contains the aforementioned non-silicone resin as a main component. The intermediate layer may contain only the non-silicone resin (consisting solely of the non-silicone resin) or may contain the non-silicone resin and components other than the non-silicone resin.

The intermediate layer can be formed, for example, using an intermediate layer-forming composition containing the aforementioned non-silicone resin. For example, the intermediate layer can be formed by applying the aforementioned intermediate layer-forming composition to the surface to be formed on the intermediate layer and drying it as needed.

The weight average molecular weight of the non-silicone resin is 100,000 or less. To further improve the separation suitability of the semiconductor wafer of the semiconductor device manufacturing sheet, the weight average molecular weight of the non-silicone resin may be, for example, 80,000 or less, 60,000 or less, or 40,000 or less.

The lower limit of the weight average molecular weight of the non-silicone resin is not particularly limited. For example, the non-silicone resin having a weight average molecular weight of 5000 or above is more readily available.

The weight average molecular weight of the non-silicone resin can be appropriately adjusted within a range defined by any combination of the aforementioned lower limit and any upper limit. For example, in one embodiment, the weight average molecular weight can be any of 5,000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000.

In this embodiment, the phrase "the intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component" means that "the intermediate layer contains the non-silicone resin in an amount sufficient to fully demonstrate the effects of containing the non-silicone resin having a weight-average molecular weight of 100,000 or less." From this perspective, the ratio of the non-silicone resin content in the interlayer to the total mass of the interlayer (in other words, the ratio of the non-silicone resin content to the total content of all components other than the solvent in the interlayer-forming composition) is preferably 50% by mass or greater, more preferably 80% by mass or greater, and even more preferably 90% by mass or greater. For example, it can be any of 95% by mass or greater, 97% by mass or greater, and 99% by mass or greater. Alternatively, the ratio is 100% by mass or less.

The aforementioned non-silicone resin is not particularly limited as long as it is a resin component having a weight-average molecular weight of 100,000 or less and does not contain silicon atoms as constituent atoms. The non-silicone resin may be, for example, a polar resin having polar groups or a non-polar resin without polar groups. For example, the non-silicone resin is preferably a polar resin in terms of high solubility in the interlayer-forming composition and improved coating suitability of the interlayer-forming composition.

In this specification, unless otherwise specified, the term "non-silicone resin" refers to a non-silicone resin having a weight average molecular weight of 100,000 or less.

The non-silicone resin may be, for example, a homopolymer of a single monomer (in other words, having only one constituent unit), or a copolymer of two or more monomers (in other words, having two or more constituent units).

Examples of the polar group include a carbonyloxy group (-C(=O)-O-) and an oxycarbonyl group (-O-C(=O)-).

The polar resin may contain only constituent units having a polar group, or may contain both constituent units having a polar group and constituent units not having a polar group.

Examples of constituent units having the aforementioned polar groups include those derived from vinyl acetate. Examples of constituent units not having the aforementioned polar groups include those derived from ethylene. The term "derived" here means undergoing the structural changes required for polymerization of the aforementioned monomers.

In the aforementioned polar resin, the mass ratio of the constituent units having polar groups relative to the total mass of all constituent units is preferably 5% by mass to 70% by mass, and may be, for example, any of 7.5% by mass to 55% by mass, 10% by mass to 40% by mass, and 10% by mass to 30% by mass. In other words, in the aforementioned polar resin, the mass ratio of the constituent units not having polar groups relative to the total mass of all constituent units is preferably 30% by mass to 95% by mass, and may be, for example, any of 45% by mass to 92.5% by mass, 60% by mass to 90% by mass, and 70% by mass to 90% by mass. When the mass ratio of the constituent units having polar groups is greater than or equal to the aforementioned lower limit, the polar resin more significantly exhibits the characteristics of having polar groups. When the mass ratio of the constituent units having polar groups is less than or equal to the aforementioned upper limit, the polar resin more moderately exhibits the characteristics of not having polar groups.

Examples of the polar resin include ethylene-vinyl acetate copolymer. The ratio of the ethylene-vinyl acetate copolymer contained in the intermediate layer to the total mass of the non-silicone resin may be, for example, 50% to 100% by mass, 80% to 100% by mass, or 90% to 100% by mass. Among them, preferred polar resins include, for example: ethylene-vinyl acetate copolymers in which the ratio of the mass of constituent units derived from vinyl acetate to the total mass of all constituent units (sometimes referred to as "the content of constituent units derived from vinyl acetate" in this specification) is 40% by mass or less; ethylene-vinyl acetate copolymers in which the above ratio is 30% by mass or less; ethylene-vinyl acetate copolymers in which the above ratio is from 10% to 40% by mass; and ethylene-vinyl acetate copolymers in which the above ratio is from 10% to 30% by mass. In other words, preferred examples of the aforementioned polar resins include: ethylene-vinyl acetate copolymers in which the ratio of the mass of ethylene-derived units relative to the total mass of all units is 60% by mass or greater; ethylene-vinyl acetate copolymers in which the ratio is 70% by mass or greater; ethylene-vinyl acetate copolymers in which the ratio is between 70% and 90% by mass; and ethylene-vinyl acetate copolymers in which the ratio is between 60% and 90% by mass. By keeping the ratio of vinyl acetate-derived units below the aforementioned upper limit, even if chips are generated from the interlayer during cutting of the film adhesive, the adhesion of the generated chips is moderately reduced, allowing for easy removal of the chips from the wafer by cleaning or the like.

Examples of the aforementioned non-polar resins include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); and polypropylene (PP).

The composition for forming the intermediate layer and the intermediate layer may contain only one non-silicone resin or two or more non-silicone resins. In the case of two or more non-silicone resins, the combination and ratio of these non-silicone resins can be arbitrarily selected. For example, the interlayer-forming composition and the interlayer may contain one or more non-silicone resins as polar resins and no non-silicone resins as non-polar resins; may contain one or more non-silicone resins as non-polar resins and a non-silicone resin as polar resins; or may contain one or more non-silicone resins as polar resins and a non-silicone resin as non-polar resins. Preferably, the interlayer-forming composition and the interlayer contain at least a non-silicone resin as a polar resin.

In the interlayer-forming composition and the interlayer, the content of the aforementioned non-silicone resin as a polar resin relative to the total content of the aforementioned non-silicone resin is preferably 50% by mass or greater, more preferably 80% by mass or greater, and even more preferably 90% by mass or greater. For example, it can be any of 95% by mass or greater, 97% by mass or greater, and 99% by mass or greater. When the aforementioned ratio is above the aforementioned lower limit, the effects obtained by using the aforementioned polar resin can be more significantly achieved. On the other hand, the aforementioned ratio is 100% by mass or less.

Specifically, the content of the aforementioned non-silicone resin as a non-polar resin in the interlayer-forming composition and the interlayer relative to the total content of the aforementioned non-silicone resin is preferably 20% by mass or less, more preferably 10% by mass or less, and can be, for example, any of 5% by mass or less, 3% by mass or less, and 1% by mass or less. Alternatively, the aforementioned ratio is 0% by mass or greater.

The composition for forming the intermediate layer preferably contains a solvent in addition to the non-silicone resin for better handling. It may also contain a component other than the non-silicone resin or the solvent (sometimes referred to as an "additive" in this specification). The intermediate layer may contain only the non-silicone resin or both the non-silicone resin and the additive.

The aforementioned additives may be either resin components (sometimes referred to as "other resin components" in this specification) or non-resin components.

Examples of the other resin components include non-silicone resins having a weight average molecular weight (Mw) exceeding 100,000 and silicone resins.

The non-silicone resin having a weight average molecular weight exceeding 100,000 is not particularly limited as long as it meets these conditions.

The intermediate layer containing the aforementioned silicone resin facilitates the pickup of semiconductor chips with film-like adhesives as described below.

The aforementioned silicone resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicone resin is not particularly limited.

Preferred silicone resins include, for example, resin components that exhibit a demolding effect on adhesive components, and more preferably silicone resins (resin components having a siloxane bond (-Si-O-Si-), also known as silicone compounds).

Examples of the silicone resin include polydialkylsiloxanes. The carbon number of the alkyl group in the polydialkylsiloxane is preferably 1 to 20. Examples of the polydialkylsiloxane include polydimethylsiloxane.

The non-resin component may be, for example, an organic compound or an inorganic compound, and is not particularly limited.

The interlayer-forming composition and the interlayer may contain only one or more of the aforementioned additives. In the case of two or more, the combination and ratio of these additives can be arbitrarily selected. For example, the interlayer-forming composition and the interlayer may contain one or more resin components and no non-resin components as the aforementioned additives, may contain one or more non-resin components and no resin components, or may contain one or more resin components and non-resin components.

When the interlayer-forming composition and the interlayer contain the aforementioned additive, the ratio of the content of the aforementioned non-silicone resin in the interlayer to the total mass of the interlayer (in other words, the ratio of the content of the aforementioned non-silicone resin to the total content of all components other than the solvent in the interlayer-forming composition) is preferably 90 mass % to 99.99 mass %, for example, any of 90 mass % to 97.5 mass %, 90 mass % to 95 mass %, and 90 mass % to 92.5 mass %, or any of 92.5 mass % to 99.99 mass %, 95 mass % to 99.99 mass %, and 97.5 mass % to 99.99 mass %, or 92.5 mass % to 97.5 mass %. When the intermediate layer-forming composition and the intermediate layer contain the aforementioned additive, the ratio of the content of the aforementioned additive in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the aforementioned additive to the total content of all components other than the solvent in the intermediate layer-forming composition) is preferably 0.01 mass % to 10 mass %, for example, any of 2.5 mass % to 10 mass %, 5 mass % to 10 mass %, and 7.5 mass % to 10 mass %, or any of 0.01 mass % to 7.5 mass %, 0.01 mass % to 5 mass %, and 0.01 mass % to 2.5 mass %, or 2.5 mass % to 7.5 mass %.

The aforementioned solvents contained in the interlayer-forming composition are not particularly limited. Preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The interlayer-forming composition may contain only one solvent or two or more. In the case of two or more solvents, the combination and ratio of these solvents can be arbitrarily selected.

From the perspective of being able to more uniformly mix the components in the intermediate layer-forming composition, the solvent contained in the intermediate layer-forming composition is preferably tetrahydrofuran or the like.

The content of the solvent in the intermediate layer-forming composition is not particularly limited and can be appropriately selected depending on the types of components other than the solvent.

As will be described later, in terms of being able to more easily pick up semiconductor chips with film-like adhesives, a preferred intermediate layer may include, for example, one containing an ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and a silicone compound as the aforementioned additive, wherein the ratio of the content of the aforementioned ethylene-vinyl acetate copolymer (the aforementioned non-silicone resin) in the intermediate layer to the total mass of the intermediate layer is within any of the aforementioned numerical ranges, and the ratio of the content of the aforementioned silicone compound (the aforementioned additive) in the intermediate layer to the total mass of the intermediate layer is within any of the aforementioned numerical ranges. For example, such an intermediate layer may include one containing an ethylene-vinyl acetate copolymer as the non-silicone resin and a silicone compound as the additive, wherein the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the silicone compound in the intermediate layer is 0.01% to 10% by mass relative to the total mass of the intermediate layer. However, this is only one example of a preferred intermediate layer.

An example of a more preferred intermediate layer includes an ethylene-vinyl acetate copolymer as the non-silicone resin and a silicone compound as the additive, wherein the ratio of the mass of the constituent units derived from vinyl acetate in the ethylene-vinyl acetate copolymer to the total mass of all constituent units (in other words, the content of the constituent units derived from vinyl acetate) is 10% to 40% by mass, the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the silicone compound in the intermediate layer is 0.01% to 10% by mass relative to the total mass of the intermediate layer. However, this is only one example of a more preferred intermediate layer.

In a semiconductor device manufacturing wafer, when analyzing the film-type adhesive side of the interlayer (e.g., first surface 13a of interlayer 13 in FIG1 ) using X-ray photoelectron spectroscopy (sometimes referred to as "XPS" in this specification), the ratio of the silicon concentration to the combined concentration of carbon, oxygen, nitrogen, and silicon (sometimes referred to as the "silicon concentration ratio" in this specification) is preferably 1% to 20% on a molar basis of the elements. Using a semiconductor device manufacturing wafer having such an interlayer makes it easier to pick up semiconductor wafers having a film-type adhesive, as described below.

The silicon concentration ratio can be calculated using the following formula: [Measured silicon concentration value (atomic %) by XPS analysis] / {[Measured carbon concentration value (atomic %) by XPS analysis] + [Measured oxygen concentration value (atomic %) by XPS analysis] + [Measured nitrogen concentration value (atomic %) by XPS analysis] + [Measured silicon concentration value (atomic %) by XPS analysis]} × 100.

XPS analysis can be performed on the surface of the intermediate layer on the film adhesive side using an X-ray photoelectron spectrometer (e.g., the "Quantra SXM" manufactured by Ulvac) at an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W.

In order to achieve a more significant effect, the silicon concentration ratio may be, for example, 4% to 20%, 8% to 20%, and 12% to 20%, or 1% to 16%, 1% to 12%, and 1% to 8%, or 4% to 16% and 8% to 12%, based on the mole basis of the element.

When performing XPS analysis as described above, it is possible that other elements other than carbon, oxygen, nitrogen, and silicon may be detected in the aforementioned surface of the intermediate layer (the surface analyzed by XPS). However, even if these other elements are detected, their concentrations are typically very low. Therefore, when calculating the silicon concentration ratio, the measured values of carbon, oxygen, nitrogen, and silicon concentrations can be used to accurately calculate the silicon concentration ratio.

The intermediate layer may be composed of a single layer or a plurality of layers. In the case of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.

As described above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate. The maximum width of the intermediate layer constituting the label portion can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum width of the intermediate layer can also be 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm in a direction parallel to the attachment surface of the semiconductor device manufacturing sheet, a semiconductor wafer having a maximum width of 200 mm, or a semiconductor wafer having a maximum width of 300 mm. However, as described above, after dicing is performed with the formation of a modified layer in the semiconductor wafer, when the film adhesive is cut by expanding the semiconductor device manufacturing sheet, as described later, the plurality of semiconductor chips (semiconductor chip group) after dicing are treated as a whole, and the semiconductor device manufacturing sheet is attached to these semiconductor chips.

In this specification, unless otherwise specified, the so-called "width of the intermediate layer" means, for example, "the width of the intermediate layer in a direction parallel to the first surface of the intermediate layer." For example, in the case of an intermediate layer having a circular planar shape, the maximum value of the width of the intermediate layer becomes the diameter of the circle having the aforementioned planar shape. This is also the case with semiconductor wafers. That is, the so-called "width of the semiconductor wafer" means "the width of the semiconductor wafer in a direction parallel to the attachment surface of the semiconductor device manufacturing sheet." For example, in the case of a semiconductor wafer having a circular planar shape, the maximum value of the width of the semiconductor wafer becomes the diameter of the circle having the aforementioned planar shape.

The maximum width of an interlayer of 150mm to 160mm means the same as, or no more than 10mm larger than, the maximum width of a 150mm semiconductor wafer. Similarly, the maximum width of an interlayer of 200mm to 210mm means the same as, or no more than 10mm larger than, the maximum width of a 200mm semiconductor wafer. Similarly, the maximum width of an interlayer of 300mm to 310mm means the same as, or no more than 10mm larger than, the maximum width of a 300mm semiconductor wafer. That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0 mm to 10 mm.

The thickness of the intermediate layer can be appropriately selected depending on the intended purpose. The thickness of the intermediate layer is preferably 5 μm to 150 μm, more preferably 5 μm to 120 μm. For example, it can be between 10 μm and 90 μm, between 10 μm and 60 μm, or between 30 μm and 120 μm. Furthermore, for other considerations, the thickness of the intermediate layer in the label portion can be between 15 μm and 80 μm or less. By ensuring that the thickness of the intermediate layer in the label portion is above the lower limit, the structure of the intermediate layer becomes more stable. By ensuring that the thickness of the intermediate layer in the label portion is above the lower limit, cracking of the intermediate layer during expansion can be suppressed. By keeping the thickness of the interlayer in the label portion below the upper limit, the film adhesive can be more easily cut during blade dicing and during the aforementioned expansion of the semiconductor device manufacturing sheet. Furthermore, by keeping the thickness of the interlayer in the label portion below 80 μm, the risk of defects during pickup of semiconductor wafers with film adhesive can be reduced. Herein, the term "interlayer thickness" refers to the thickness of the entire interlayer. For example, the term "thickness of a multi-layer interlayer" refers to the combined thickness of all layers comprising the interlayer.

When the interlayer contains the aforementioned silicone resin, especially when the silicone resin has low compatibility with the aforementioned non-silicone resin as the main component, the silicone resin in the interlayer tends to concentrate on both surfaces of the interlayer (the first surface and the surface opposite it) and the surrounding areas in the semiconductor device manufacturing wafer. Furthermore, the stronger this tendency, the easier it is for the film adhesive adjacent to (directly contacting) the interlayer to peel off from the interlayer. This makes it easier to pick up semiconductor chips with the film adhesive, as described below. For example, when comparing interlayers that differ only in thickness but are identical in all other aspects, such as composition and the area of the two surfaces, the ratio (mass %) of the silicone resin content relative to the total mass of the interlayer in these interlayers is the same. However, the silicone resin content (mass %) in the thicker interlayer is higher than that in the thinner interlayer. Therefore, in the case where silicone resin tends to concentrate in the interlayer as described above, the thicker interlayer will have a higher amount of silicone resin concentrated on the two surfaces (the first surface and the surface opposite it) and their surrounding areas than the thinner interlayer. Therefore, even without changing the aforementioned ratio, the pick-up suitability of semiconductor wafers with film-type adhesives can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by increasing the thickness of the intermediate layer in the semiconductor device manufacturing sheet, semiconductor wafers with film-type adhesives can be picked up more easily.

The intermediate layer can be formed using an adhesive composition containing the constituent materials of the intermediate layer. For example, the adhesive composition can be applied to the surface where the film-like adhesive is to be formed and dried as needed to form a film-like adhesive on the target area.

The intermediate layer forming composition can be applied by the same method as the adhesive composition.

The drying conditions for the intermediate layer-forming composition are not particularly limited. When the intermediate layer-forming composition contains the aforementioned solvent, it is preferably dried by heating. In this case, it is preferably dried at 60°C to 130°C for 1 to 6 minutes.

Film Adhesives: These film adhesives are hardenable, preferably thermosetting, and even more preferably pressure-sensitive. Film adhesives that exhibit both thermosetting and pressure-sensitive properties can be adhered to various adherends by lightly pressing them against the uncured surface. Alternatively, film adhesives can be softened by heating and adhered to various adherends. Curing ultimately results in a highly impact-resistant cured product that maintains sufficient adhesion even under extreme high-temperature and high-humidity conditions.

When viewing the semiconductor device manufacturing sheet from above, the area of the film adhesive (i.e., the area of the first surface) is preferably smaller than the area of the substrate (i.e., the area of the first surface) and the area of the adhesive layer (i.e., the area of the first surface), so as to approximate the area of the semiconductor wafer before dicing. In this semiconductor device manufacturing sheet, a portion of the first surface of the adhesive layer includes a region that is not in contact with the intermediate layer and the film adhesive (i.e., the aforementioned non-laminated region). This facilitates expansion of the semiconductor device manufacturing sheet and prevents the force applied to the film adhesive during expansion from being dispersed, thereby making it easier to cut the film adhesive.

A film-like adhesive can be formed using an adhesive composition containing the constituent materials of the film-like adhesive. For example, by applying the adhesive composition to the surface where the film-like adhesive is to be formed and drying it as needed, a film-like adhesive can be formed on the target area.

The adhesive composition can be applied by the same method as the adhesive composition.

The drying conditions for the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, it is preferably dried at 70°C to 130°C for 10 seconds to 5 minutes.

The film adhesive may be composed of a single layer (monolayer) or multiple layers of two or more. In the case of multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.

As described above, the maximum width of the film adhesive is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate. The maximum width of the film adhesive constituting the label portion can be tailored to the size of the semiconductor wafer, similar to the maximum width of the intermediate layer described above. In other words, the maximum width of the film adhesive constituting the label portion can be appropriately selected based on the size of the semiconductor wafer. For example, the maximum width of the film adhesive constituting the label portion can be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm. These three numerical ranges correspond to semiconductor wafers with a maximum width of 150mm, a maximum width of 200mm, or a maximum width of 300mm in a direction parallel to the surface on which the semiconductor device manufacturing sheet is attached. The maximum width of the film adhesive on the label portion within the aforementioned ranges prevents the film adhesive from scattering during expansion of the semiconductor manufacturing sheet.

In this specification, unless otherwise specified, the term "film adhesive width" means, for example, "the width of the film adhesive in a direction parallel to the first surface of the film adhesive." For example, in the case of a film adhesive having a circular planar shape, the maximum value of the film adhesive width is the diameter of the circle representing the planar shape. Furthermore, unless otherwise specified, the term "film adhesive width" means "the width of the film adhesive before (or before) cutting" during the manufacturing process of a semiconductor chip having a film adhesive, as described later, and does not refer to the width of the film adhesive after cutting.

The maximum width of a film adhesive of 150mm to 160mm means the same as, or no more than 10mm larger than, the maximum width of a 150mm semiconductor wafer. Similarly, the maximum width of a film adhesive of 200mm to 210mm means the same as, or no more than 10mm larger than, the maximum width of a 200mm semiconductor wafer. Similarly, the maximum width of a film adhesive of 300mm to 310mm means the same as, or no more than 10mm larger than, the maximum width of a 300mm semiconductor wafer. That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the film adhesive constituting the label portion and the maximum width of the semiconductor wafer can be, for example, 0 mm to 10 mm.

In this embodiment, the maximum width of the intermediate layer and the maximum width of the film-shaped adhesive forming the label portion can be within any of the aforementioned numerical ranges. Specifically, as an example of a semiconductor device manufacturing sheet according to this embodiment, the maximum width of the intermediate layer and the maximum width of the film-shaped adhesive forming the label portion can both be 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm.

The thickness of the film adhesive is not particularly limited, and is preferably 1 μm to 30 μm, more preferably 2 μm to 20 μm, and particularly preferably 3 μm to 10 μm. By having the thickness of the film adhesive be above the aforementioned lower limit, a higher bonding force can be obtained relative to the adherend (semiconductor chip). By having the thickness of the film adhesive be below the aforementioned upper limit, the film adhesive can be more easily cut during blade cutting or the aforementioned expansion of the semiconductor device manufacturing sheet. Here, the so-called "thickness of the film adhesive" means the thickness of the entire film adhesive. For example, the so-called thickness of a film adhesive composed of multiple layers means the total thickness of all layers constituting the film adhesive.

In this embodiment, the combined thickness of the intermediate layer and the film-like adhesive is preferably 15 μm or greater, more preferably 10 μm to 180 μm, even more preferably 20 μm to 150 μm, and even more preferably 25 μm to 120 μm. By ensuring the combined thickness of the intermediate layer and the film-like adhesive is above the lower limit, the risk of cracking during the removal of unused portions during the stamping process can be reduced. By ensuring the combined thickness of the intermediate layer and the film-like adhesive is below the upper limit, curling marks tend to be significantly prevented.

The intermediate layer and the film-like adhesive preferably have a first surface of the intermediate layer having an area equal to or greater than that of the first surface of the film-like adhesive, and may also have the same shape. The intermediate layer and the film-like adhesive are preferably laminated so that the peripheries of their top-view shapes are consistent.

The adhesive composition described below may contain, for example, one or more of the following components in such a manner that the total content (mass %) does not exceed 100 mass %.

[Adhesive Composition] Preferred adhesive compositions include, for example, those containing a polymer component (a) and a thermosetting component. Each component is described below. The adhesive compositions shown below are merely preferred examples, and the adhesive compositions in this embodiment are not limited to these.

[Polymer Component (a)] Polymer component (a) is a component formed by the polymerization reaction of a polymerizable compound. It is used to impart film-forming properties and flexibility to the film-forming adhesive, and to improve its adhesion (in other words, adhesion) to the target object, such as a semiconductor chip. Polymer component (a) is thermoplastic and does not have thermosetting properties.

The polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these polymer components (a) may be arbitrarily selected.

Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins. Among these, the polymer component (a) is preferably an acrylic resin.

In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components other than the solvent (i.e., the ratio of the content of the polymer component (a) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 20 mass % to 75 mass %, more preferably 30 mass % to 65 mass %.

[Thermosetting Component (b)] Thermosetting component (b) is a thermosetting component used to thermally cure the film-forming adhesive. The adhesive composition and film-forming adhesive may contain a single thermosetting component (b) or two or more. In the case of two or more, the combination and ratio of these thermosetting components (b) can be arbitrarily selected.

Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins. Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

Epoxy-based thermosetting resins: Epoxy-based thermosetting resins are composed of an epoxy resin (b1) and a thermosetting agent (b2). The adhesive composition and film-forming adhesive may contain a single epoxy-based thermosetting resin or two or more. In the case of two or more epoxy-based thermosetting resins, the combination and ratio of these epoxy-based thermosetting resins can be arbitrarily selected.

・Epoxy resin (b1) Examples of the epoxy resin (b1) include known epoxy resins, such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, o-cresol novolac epoxy resin, dicyclopentadiene epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, bisphenol F epoxy resin, and phenylene skeleton epoxy resin, which are epoxy compounds having two or more functional groups.

As the epoxy resin (b1), an epoxy resin having an unsaturated alkyl group can also be used. Epoxy resins having unsaturated alkyl groups have a higher compatibility with acrylic resins than epoxy resins without unsaturated alkyl groups. Therefore, by using an epoxy resin having an unsaturated alkyl group, the reliability of the package obtained using the film adhesive is improved.

The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these epoxy resins (b1) can be arbitrarily selected.

Thermohardener (b2) functions as a hardener for the epoxy resin (b1). Examples of thermohardener (b2) include compounds having two or more functional groups capable of reacting with epoxy groups within a molecule. Examples of these functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and acid anhydride-converted groups. Phenolic hydroxyl groups, amino groups, or acid anhydride-converted groups are preferred, with phenolic hydroxyl groups or amino groups being even more preferred.

Among the heat curing agents (b2), examples of phenolic curing agents having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenol, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins. Among the heat curing agents (b2), examples of amine-based curing agents having an amino group include dicyandiamide (DICY).

The thermosetting agent (b2) may also have an unsaturated hydrocarbon group.

The adhesive composition and the film-like adhesive may contain only one type of thermosetting agent (b2) or two or more types. In the case of two or more types, the combination and ratio of these thermosetting agents (b2) can be arbitrarily selected.

In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin (b1). For example, it can be any one of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. By making the aforementioned content of the thermosetting agent (b2) greater than or equal to the aforementioned lower limit, the film adhesive is more easily cured. By making the aforementioned content of the thermosetting agent (b2) less than or equal to the aforementioned upper limit, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained using the film adhesive is further improved.

In the adhesive composition and film-like adhesive, the content of the thermosetting component (b) (e.g., the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and even more preferably 5 to 50 parts by mass, and can be, for example, any of 5 to 35 parts by mass and 5 to 20 parts by mass. By having the content of the thermosetting component (b) within this range, the peeling force between the intermediate layer and the film-like adhesive is more stable.

In order to improve various physical properties of the film adhesive, the adhesive composition and film adhesive may contain, in addition to the polymer component (a) and the thermosetting component (b), other components other than these components as needed. Preferred other components of the adhesive composition and film adhesive include, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray-curable resin (g), a photopolymerization initiator (h), and a general additive (i).

[Hardening accelerator (c)] Hardening accelerator (c) is a component used to adjust the hardening speed of the adhesive composition. Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylborates such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate.

The adhesive composition and the film-like adhesive may contain only one type of hardening accelerator (c) or two or more types. In the case of two or more types, the combination and ratio of these hardening accelerators (c) can be arbitrarily selected.

When a hardening accelerator (c) is used, the content of the hardening accelerator (c) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the thermosetting component (b) in the adhesive composition and the film-like adhesive. By setting the content of the hardening accelerator (c) to be above the lower limit, the effect of using the hardening accelerator (c) can be more significantly achieved. By keeping the content of the curing accelerator (c) below the aforementioned upper limit, the effect of suppressing the highly polar curing accelerator (c) from migrating and segregating in the film adhesive toward the interface between the film adhesive and the adherend under high temperature and high humidity conditions is enhanced, thereby further improving the reliability of the package obtained using the film adhesive.

[Filler (d)] The inclusion of filler (d) in a film adhesive further enhances its expansion cutoff properties. Furthermore, the inclusion of filler (d) facilitates adjustment of the thermal expansion coefficient. By optimizing the thermal expansion coefficient for the object to which the film adhesive is attached, the reliability of the package using the film adhesive is further enhanced. Furthermore, the inclusion of filler (d) in the film adhesive can reduce the moisture absorption rate of the cured film adhesive and improve heat dissipation.

Filler (d) can be either an organic filler or an inorganic filler, preferably an inorganic filler. Preferred inorganic fillers include: powders of silica, alumina, talc, calcium carbonate, titanium dioxide, red iron, silicon carbide, boron nitride, etc.; beads formed by sphericalizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; and glass fibers. Of these, silica or alumina is preferred.

The filler (d) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these fillers (d) may be arbitrarily selected.

When filler (d) is used, the ratio of the filler (d) content to the total content of all components other than the solvent in the adhesive composition (i.e., the ratio of the filler (d) content in the film-forming adhesive to the total mass of the film-forming adhesive) is preferably 5% to 80% by mass, more preferably 10% to 70% by mass, and even more preferably 20% to 60% by mass. By maintaining the ratio within this range, the effects of using filler (d) can be more significantly achieved.

[Coupling Agent (e)] The inclusion of a coupling agent (e) in a film adhesive improves its adhesion and close contact with the adherend. Furthermore, the inclusion of a coupling agent (e) in the film adhesive improves the water resistance of the cured product without compromising heat resistance. The coupling agent (e) has a functional group that reacts with an inorganic or organic compound.

The coupling agent (e) is preferably a compound having a functional group that can react with the functional groups of the polymer component (a) and the thermosetting component (b), and is more preferably a silane coupling agent.

The coupler (e) contained in the adhesive composition and the film-like adhesive may be one type or two or more types. In the case of two or more types, the combination and ratio of these couplers (e) may be arbitrarily selected.

When a coupling agent (e) is used, the amount of the coupling agent (e) in the adhesive composition and film-like adhesive is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and even more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). By ensuring that the coupling agent (e) content is above the aforementioned lower limit, the effects of the coupling agent (e), such as improved dispersibility of the filler (d) in the resin and improved adhesion between the film-like adhesive and the adherend, can be more significantly achieved. By ensuring that the coupling agent (e) content is below the aforementioned upper limit, the generation of outgassing can be further suppressed.

[Crosslinking Agent (f)] When using the aforementioned acrylic resins, which have functional groups such as vinyl, (meth)acryl, amino, hydroxyl, carboxyl, or isocyanate groups capable of bonding with other compounds, as the polymer component (a), the adhesive composition and film-forming adhesive may also contain a crosslinking agent (f). The crosslinking agent (f) is a component used to bond the aforementioned functional groups in the polymer component (a) with other compounds, thereby crosslinking. This crosslinking can adjust the initial adhesion and cohesive strength of the film-forming adhesive.

Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridine group).

When an organic polyvalent isocyanate compound is used as the crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinking structure can be easily introduced into the film-forming adhesive through the reaction between the crosslinking agent (f) and the polymer component (a).

The crosslinking agent (f) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents (f) can be arbitrarily selected.

When a crosslinking agent (f) is used, the amount of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.3 to 5 parts by mass, relative to 100 parts by mass of the polymer component (a). By ensuring that the amount of the crosslinking agent (f) is above the lower limit, the effects of using the crosslinking agent (f) are more significantly achieved. By ensuring that the amount of the crosslinking agent (f) is below the upper limit, excessive use of the crosslinking agent (f) is suppressed.

[Energy ray curable resin (g)] When the adhesive composition and the film adhesive contain the energy ray curable resin (g), the properties of the film adhesive can be changed by irradiation with energy rays.

The energy ray-curable resin (g) is obtained from an energy ray-curable compound. Examples of the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, preferably acrylate compounds having a (meth)acryloyl group.

The energy ray curable resin (g) contained in the adhesive composition may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these energy ray curable resins (g) may be arbitrarily selected.

When the energy ray curable resin (g) is used, the content of the energy ray curable resin (g) in the adhesive composition is preferably 1 mass % to 95 mass %, more preferably 5 mass % to 90 mass %, and even more preferably 10 mass % to 85 mass % relative to the total mass of the adhesive composition.

[Photopolymerization Initiator (h)] When the adhesive composition and the film-like adhesive contain the energy ray-curable resin (g), a photopolymerization initiator (h) may be contained in order to efficiently carry out the polymerization reaction of the energy ray-curable resin (g).

Examples of the photopolymerization initiator (h) in the connecter composition include: benzoin compounds such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acyl compounds such as bis(2,4,6-trimethylbenzyl)phenylphosphine oxide and 2,4,6-trimethylbenzyldiphenylphosphine oxide; Examples of the photopolymerization initiator (h) include phosphine oxide compounds; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thiothione compounds such as thiothione; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4-diethylthiothione; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; and quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone. Examples of the photopolymerization initiator (h) include photosensitizers such as amine.

The photopolymerization initiator (h) contained in the adhesive composition may be only one type or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators (h) may be arbitrarily selected.

When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 2 to 5 parts by mass, per 100 parts by mass of the energy ray-curable resin (g).

[General Additive (i)] General additive (i) may be any known additive and may be selected according to the intended purpose without particular limitation. Preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), and air getters.

The general-purpose additive (i) contained in the adhesive composition and film-forming adhesive may be a single type or two or more types. In the case of two or more types, the combination and ratio of these general-purpose additives (i) may be arbitrarily selected. The content of the adhesive composition and film-forming adhesive is not particularly limited and may be appropriately selected according to the intended purpose.

[Solvent] The adhesive composition preferably further contains a solvent. Adhesive compositions containing a solvent improve handling. The aforementioned solvent is not particularly limited. Preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The adhesive composition may contain only one solvent or two or more. In the case of two or more solvents, the combination and ratio of these solvents can be arbitrarily selected.

From the perspective of being able to more uniformly mix the components in the adhesive composition, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

The content of the solvent in the adhesive composition is not particularly limited and can be appropriately selected according to the types of components other than the solvent.

[Adhesive Composition Manufacturing Method] An adhesive composition is obtained by blending the components that constitute it. Apart from the differences in the types of ingredients blended, the adhesive composition can be manufactured using the same methods as the adhesive composition described above.

○ Peeling film The material constituting the peeling film is preferably various resins, and those exemplified in the aforementioned substrates can be cited, and polyethylene terephthalate (PET) is preferred.

The thickness of the peeling film can be appropriately selected according to the purpose, and may be from 10 μm to 200 μm, from 20 μm to 150 μm, or from 30 μm to 80 μm.

Here, the term "thickness of the peeling film" refers to the thickness of the peeling film as a whole. For example, the term "thickness of a peeling film composed of multiple layers" refers to the combined thickness of all layers comprising the peeling film.

In addition to the aforementioned resin and other main components, the release film may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.

The surface of the release film that contacts the film adhesive is preferably a release-treated surface that has been treated with a release agent. The release-treated surface may contain a release agent. Examples of release agents include alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based, and wax-based release agents. Silicone-based release agents containing silicone are preferred.

In order to use the above-mentioned stripping agent for stripping treatment, the following methods can be listed: the stripping agent is kept in a solvent-free state or diluted with a solvent or made into an emulsion, and is applied by a gravure coater, a Mayer rod coater, an air knife coater, a roll coater, etc. The film coated with the stripping agent is supplied at room temperature or under heating, or is hardened by an electron beam, or is formed into a laminate by wet lamination or dry lamination, hot melt lamination, melt extrusion lamination, co-extrusion processing, etc.

◇ Roller: As one embodiment of the semiconductor device manufacturing sheet of the present invention, a roll is provided. The roll is formed by rolling the aforementioned release film into a long strip, with the label portion and the peripheral portion provided thereon. The label portion and the peripheral portion are positioned as the inner side. The term "inner side" refers to the roll facing the center (core) side of the roll.

Figure 4 is a schematic cross-sectional view of a roller according to one embodiment of the present invention, showing the roller partially unfolded after being opened. Figure 4 includes the cross-sectional view taken along line BB' of Figure 2. The roller 110 comprises a label portion 30 and a peripheral portion (not shown). Two or more units _P30 , each consisting of a label portion 30 comprising a substrate 11, an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14, are stacked on the release film 15. The roll is formed such that the side of the unit _P30 stacked with the substrate 11 faces the center (core) of the roller. The roll is rolled in the direction of the long side of the strip of release film 15. The number of times the roll is wound is not particularly limited, but it is preferably wound more than once so that at least a portion of the semiconductor device manufacturing sheet overlaps the aforementioned unit _P30 .

The aforementioned unit of the semiconductor device manufacturing sheet may include a portion of the film adhesive used for attaching a single object. In Figure 4, each unit _P30 includes a circular film adhesive 14, with two or more units _P30 arranged continuously at predetermined intervals. Within a roll, the components contained in each unit _P30 may be processed into the same shape. A preferred shape is a concentric layer formation of a circular support sheet 1, a circular intermediate layer 13 of a smaller diameter than the support sheet 1, and the film adhesive 14.

The film adhesive 14 can easily adhere to a semiconductor wafer (an object to be attached) and has good adhesion. Therefore, by sandwiching the film adhesive 14 between the release film 15 and the support sheet 1, it is suitable for storage in a roll. The roll is also suitable for distributing sheets used in semiconductor device manufacturing.

The roller can be manufactured, for example, by laminating a strip of release film, a substrate, an adhesive layer, an intermediate layer, and a film-shaped adhesive in a corresponding positional relationship.

◇Method for Manufacturing a Semiconductor Device Manufacturing Sheet The aforementioned semiconductor device manufacturing sheet can be manufactured by laminating the aforementioned layers in a corresponding positional relationship. The method for forming each layer is as described above.

For example, the aforementioned semiconductor device manufacturing sheet can be manufactured by separately preparing a substrate, an adhesive layer, an intermediate layer, and a film-shaped adhesive, and then laminating these layers in the order of the substrate, adhesive layer, intermediate layer, and film-shaped adhesive. However, this method is only one example of a method for manufacturing a semiconductor device manufacturing sheet.

The aforementioned semiconductor device manufacturing sheet can also be manufactured, for example, by pre-forming two or more intermediate laminates composed of multiple layers to constitute the semiconductor device manufacturing sheet and then laminating these intermediate laminates together. The structure of the intermediate laminate can be arbitrarily selected as appropriate. For example, a semiconductor device manufacturing sheet can be manufactured by prefabricating a first interlayer structure (equivalent to the aforementioned support sheet) comprising a substrate and an adhesive layer, and a second interlayer structure comprising an interlayer and a film-like adhesive layer, and then laminating the adhesive layer of the first interlayer structure to the interlayer of the second interlayer structure. However, this is only one example of a method for manufacturing a semiconductor device manufacturing sheet.

When manufacturing the aforementioned semiconductor device manufacturing sheet, for example, in the case where the area of the first surface of the interlayer and the first surface of the film-like adhesive are both smaller than the area of the first surface of the adhesive layer and the first surface of the substrate, as shown in FIG1 , a step of processing the interlayer and the film-like adhesive to the target size can be added at any stage of the aforementioned manufacturing method. For example, in the manufacturing method using the aforementioned second interlayer body, a step of processing the interlayer and the film-like adhesive in the second interlayer body to the target size can be added to manufacture the semiconductor device manufacturing sheet.

When manufacturing the aforementioned semiconductor device sheet, for example, as shown in FIG1 , where the area of the first surface of the substrate and the area of the first surface of the adhesive layer are both smaller than the area of the first surface of the release film, a step of processing the substrate and the adhesive layer to the target size can be added at any stage of the above-mentioned manufacturing method.

When manufacturing a semiconductor device manufacturing sheet with a release film on a film-like adhesive, for example, the film-like adhesive can be formed on the release film, and the remaining layers can be deposited while the film-like adhesive is maintained to produce the semiconductor device manufacturing sheet. Alternatively, the substrate, adhesive layer, intermediate layer, and film-like adhesive can be deposited, and then the release film can be deposited on the film-like adhesive to produce the semiconductor device manufacturing sheet. The release film can be removed at a necessary stage before using the semiconductor device manufacturing sheet.

A sheet for manufacturing semiconductor devices having layers other than a substrate, an adhesive layer, an intermediate layer, a film adhesive, and a release film can be manufactured by adding a step of forming and laminating the other layers at an appropriate time in the above-mentioned manufacturing method.

Each layer of the semiconductor device manufacturing sheet can be processed into any shape by, for example, stamping. For example, when the intermediate layer 13 and the film adhesive 14 are set to be circular, they can be stamped into the circular shape using a stamping blade of the corresponding shape.

A method for manufacturing a semiconductor device manufacturing sheet according to one embodiment of the present invention may include: a lamination step of laminating a first intermediate laminate having the substrate and the adhesive layer to a second intermediate laminate having the intermediate layer and the film-like adhesive; and a processing step of removing a portion of the film-like adhesive and the intermediate layer from the second intermediate laminate by stamping, thereby forming the label portion, the trench, and the peripheral portion.

The second intermediate laminate used in the lamination step may also be one that has been subjected to a stamping process (e.g., the second intermediate laminate product described below).

The aforementioned processing steps may include the following first processing step and second processing step. The method for manufacturing a semiconductor device manufacturing sheet according to one embodiment of the present invention may include: a first processing step, for the aforementioned intermediate layer and the aforementioned film-like adhesive in the second intermediate laminate body having the aforementioned intermediate layer and the aforementioned film-like adhesive, forming a cut-in portion C at a position corresponding to the periphery of the aforementioned intermediate layer and the aforementioned film-like adhesive of the aforementioned label portion constituting the semiconductor device manufacturing sheet, removing at least a portion of the aforementioned film-like adhesive and the intermediate layer located on the outer side from the cut-in portion C to obtain a second intermediate laminate body processed product; The method further comprises the steps of laminating a first intermediate laminate body having the substrate and the adhesive layer and a second intermediate laminate body workpiece to obtain a laminate; and a second processing step of forming a cut-in portion C' on the substrate and the adhesive layer of the laminate at a position corresponding to the periphery of the substrate and the adhesive layer, which is continuous from the label portion of the sheet for manufacturing semiconductor devices, and removing at least a portion of the substrate and the adhesive layer located on the outer side from the cut-in portion C' to obtain a sheet for manufacturing semiconductor devices.

Fig. 3 is a schematic diagram showing an example of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment. The semiconductor device manufacturing sheet shown in Fig. 3 is obtained by turning the semiconductor device manufacturing sheet shown in Fig. 1 upside down.

[First Processing Step] The second intermediate laminate 102 shown in Figure 3A comprises a film-like adhesive 14 and an intermediate layer 13, with a release film 15, a film-like adhesive 14, an intermediate layer 13, and a release film 16 stacked in this order. A first press is performed to form cutouts C1 and C2 in the release film 16, the intermediate layer 13, and the film-like adhesive 14 of the second intermediate laminate 102, starting from the side where the release film 16 is stacked. Cutout C2 corresponds to the outer periphery of the intermediate layer 13 and the film-like adhesive 14 in the label portion 30 of the semiconductor device manufacturing sheet 101. The cutting portions C1 and C2 of the punching area here are arranged concentrically with each other. During punching, the peeling film 15 can be cut until the cutting portion C1 and C2 are formed on the peeling film 15. Subsequently, a portion located on the outer side (the annular portion sandwiched by the cutting portions C1 and C2) starting from the cutting portion C2 is removed to obtain the second intermediate multilayer workpiece 103. The outer side here refers to the position outside the area surrounded by the cutting portion C2 in a direction parallel to the surface of the film adhesive. A first groove 35 corresponding to the portion sandwiched by the removed cutting portions C1 and C2 is formed in the second intermediate multilayer workpiece 103 (Figure 3B).

[Lamination Step] The release film 16 is removed from the second intermediate multilayered product 103 obtained above, exposing one surface of the intermediate layer 13. Separately, a release film (not shown) is removed from a first intermediate multilayered product having a release film and comprising a substrate 11 and an adhesive layer 12 disposed on one surface of the substrate 11, exposing one surface of the adhesive layer 12. Next, a lamination step is performed in which the exposed surface of the adhesive layer 12 of the first intermediate multilayered product 104 is bonded to the exposed surface of the intermediate layer 13 of the second intermediate multilayered product 103. The first intermediate laminate 104 is laminated to cover the intermediate layer 13 and the film-like adhesive 14 of the second intermediate laminate workpiece 103. Thus, a laminate 105 comprising the release film 15, the film-like adhesive 14, the intermediate layer 13, the adhesive layer 12, and the substrate 11 is obtained ( FIG. 3C ).

[Second Processing Step] A second punching operation is performed on the substrate 11, adhesive layer 12, intermediate layer 13, and film adhesive 14 of the resulting laminate 105, starting from the side on which the substrate 11 is laminated, to form cutouts C3 and C4. Cutout C3 corresponds to the periphery of the peripheral portion 32 of the semiconductor device manufacturing sheet 101. Cutout C4 corresponds to the periphery of the substrate 11 and adhesive layer 12 located within the trench 34 of the semiconductor device manufacturing sheet 101. Cutout C4 of this punching operation is arranged concentrically with cutouts C1 and C2. During the punching process, the film is cut into the release film 15, forming cutouts C3 and C4 in the release film 15. Subsequently, a portion of the film located outside the cutout C4 (the portion sandwiched between the cutouts C3 and C4) is removed, thereby obtaining a semiconductor device manufacturing sheet 101 ( FIG. 3D ). The "outside" here refers to the area outside the area enclosed by the cutout C4 in a direction parallel to the surface of the film adhesive.

Here, the cut portion C4 is located radially outward of the film adhesive 14 of the label portion 30 relative to the cut portion C2, so the area of the first surface of the adhesive layer 12 and the first surface of the substrate 11 are formed to be larger than the area of the first surface of the intermediate layer 13 and the first surface of the film adhesive 14.

Furthermore, the cutout portion C3 is located radially outward of the film adhesive 14, closer to the label portion 30, than the cutout portion C1. Therefore, not only the substrate 11 and the adhesive layer 12, but also the outer portion of the intermediate layer 13 and the film adhesive 14 are removed after the stamping process. However, in the manufacturing method of the semiconductor device manufacturing sheet of the embodiment, stamping of the portion further outward from the cutout portion C1 is not required.

Semiconductor device manufacturing sheet 101 is formed with a second trench 36 corresponding to the portion sandwiched between cutouts C3 and C4. The portion where second trench 36 and first trench 35 merge corresponds to trench 34 of semiconductor device manufacturing sheet 101. The radially inner side of film adhesive 14 surrounded by cutout C2 corresponds to label portion 30. The radially outer side of film adhesive 14 on label portion 30 at cutout C3 corresponds to outer periphery 32.

Furthermore, the embodiment shown in FIG3 includes two stamping processes, namely the first processing step and the second processing step, but the label portion 30, the groove 34 and the peripheral portion 32 can also be formed by a single stamping process (for example, forming the cut portions C1 and C2 in the laminate of the second intermediate laminate and the first intermediate laminate that have not been stamped).

The method for manufacturing a sheet for manufacturing semiconductor devices in an embodiment may further include, before the aforementioned first processing step, a second intermediate layer manufacturing step, comprising applying an adhesive composition to the release-treated surface of the first release film and drying the adhesive composition to form a film-like adhesive, applying an intermediate layer-forming composition to the release-treated surface of the release film and drying the adhesive composition to form an intermediate layer, and laminating the exposed surface of the film-like adhesive to the exposed surface of the intermediate layer, thereby obtaining a second intermediate layer having the first release film.

The method for manufacturing a sheet for manufacturing a semiconductor device according to an embodiment may further include, before the aforementioned lamination step, a first intermediate laminate body manufacturing step, wherein an adhesive composition is applied to the release-treated surface of the release film, dried to form an adhesive layer, and the exposed surface of the adhesive layer is bonded to a substrate to obtain the first intermediate laminate body.

A method for manufacturing a semiconductor device manufacturing sheet according to one embodiment of the present invention includes a processing step accompanying the aforementioned stamping process, thereby enabling the simple formation of a peripheral portion having the same layer structure as the label portion. Consequently, a semiconductor device manufacturing sheet that effectively suppresses the generation of winding marks in the roll can be simply manufactured.

◇ Method of using the semiconductor device manufacturing sheet (method for manufacturing semiconductor chips with film-like adhesives) The aforementioned semiconductor device manufacturing sheet can be used in the semiconductor device manufacturing process to manufacture semiconductor chips with film-like adhesives. As one embodiment of the present invention, a method for manufacturing a semiconductor chip with a film-like adhesive is provided, which comprises the following steps: a step of laminating a semiconductor wafer or a semiconductor chip on the side of the aforementioned film-like adhesive of a sheet for manufacturing a semiconductor device in the embodiment to obtain a laminate; and a step of cutting the aforementioned film-like adhesive, or the aforementioned semiconductor wafer and the aforementioned film-like adhesive along the periphery of the aforementioned semiconductor chip to obtain a semiconductor chip with a film-like adhesive.

The following describes in detail a method for using the aforementioned semiconductor device manufacturing sheet (a method for manufacturing a semiconductor chip with a film-like adhesive) with reference to the drawings.

A method for manufacturing a semiconductor chip with a film adhesive in an embodiment includes the following steps: attaching the inner surface of a semiconductor wafer to the exposed surface of the film adhesive of a sheet for manufacturing a semiconductor device to obtain a laminate consisting of the substrate, the adhesive layer, the intermediate layer, the film adhesive, and the semiconductor wafer stacked in sequence; dividing the semiconductor wafer and cutting the film adhesive to obtain a semiconductor chip with a film adhesive; and pulling the semiconductor chip with a film adhesive away from the substrate, the adhesive layer, and the intermediate layer and picking it up.

Figure 5 is a cross-sectional view showing the label portion, schematically illustrating one example of how a semiconductor device manufacturing sheet can be used. The diagram shows how the semiconductor device manufacturing sheet is attached to a semiconductor wafer. In this method, the semiconductor device manufacturing sheet is used as a dicing wafer. Here, the semiconductor device manufacturing sheet 101 shown in Figure 1 is used as an example to illustrate how it can be used.

First, as shown in FIG5A , while heating a semiconductor device manufacturing sheet 101 with the release film 15 removed, the film adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the inner surface 9b' of the semiconductor wafer 9'. Reference numeral 9a' indicates the circuit-forming surface of the semiconductor wafer 9'.

The heating temperature during attachment of the semiconductor device manufacturing sheet 101 is not particularly limited, but is preferably 40° C. to 70° C. in order to further improve the thermal attachment stability of the semiconductor device manufacturing sheet 101 .

The maximum width _W13 of the intermediate layer 13 and the maximum width _W14 of the film adhesive 14 in the semiconductor device manufacturing sheet 101 are completely identical to the maximum width W9 _' of the semiconductor wafer 9', or are substantially identical with slight differences.

Next, the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' obtained above is cut with a blade from the circuit formation surface 9a' side of the semiconductor wafer 9' (blade dicing is performed), thereby dividing the semiconductor wafer 9' and cutting the film adhesive 14.

Blade dicing can be performed using known methods. For example, the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not deposited (the aforementioned non-deposited area) can be fixed to a jig such as a ring frame (not shown), and then a blade can be used to separate the semiconductor wafers 9' and cut the film adhesive 14.

Through this step, as shown in FIG5B , a plurality of semiconductor chips 914 with film adhesives are obtained. The semiconductor chips 914 with film adhesives include a semiconductor chip 9 and a cut film adhesive 140 provided on the inner surface 9b of the semiconductor chip 9. These semiconductor chips 914 with film adhesives are fixed in an orderly manner on the intermediate layer 13 in the laminate 10, forming a semiconductor chip group 910 with film adhesives. The inner surface 9b of the semiconductor chip 9 corresponds to the inner surface 9b' of the semiconductor wafer 9'. In FIG5 , the symbol 9a represents the circuit forming surface of the semiconductor chip 9, which corresponds to the circuit forming surface 9a' of the semiconductor wafer 9'.

When cutting with a blade, it is preferred to use a blade to separate the semiconductor wafer 9' by cutting into the entire area in the thickness direction, and for the semiconductor device manufacturing sheet 101, cut from the first surface 14a of the film adhesive 14 to the area halfway through the intermediate layer 13, thereby cutting the film adhesive 14 in the entire area in the thickness direction without cutting into the adhesive layer 12. That is, when cutting with a blade, it is better to use the blade to cut into the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' in the direction of these laminates from the circuit forming surface 9a' of the semiconductor wafer 9' at least to the first surface 13a of the intermediate layer 13, and not to cut into the surface of the intermediate layer 13 that is opposite to the first surface 13a (that is, the contact surface with the adhesive layer 12).

In this step, the blade can be easily prevented from reaching the substrate 11, thereby suppressing the generation of cutting chips from the substrate 11. In addition, the main component of the intermediate layer 13 cut by the blade is a non-silicone resin with a weight average molecular weight of 100,000 or less, especially a weight average molecular weight of 100,000 or less, thereby also suppressing the generation of cutting chips from the intermediate layer 13.

The conditions for blade cutting are not particularly limited as long as they are appropriately adjusted according to the purpose. Generally, the rotation speed of the blade is preferably 15,000 rpm to 50,000 rpm, and the movement speed of the blade is preferably 5 mm/sec to 75 mm/sec.

After dicing, as shown in Figure 5C , the semiconductor wafer 914 with the adhesive film is pulled away from the intermediate layer 13 of the laminate 10 and picked up. Here, a pulling mechanism 7, such as a vacuum chuck, is shown pulling the semiconductor wafer 914 with the adhesive film in the direction of arrow P. Furthermore, a cross-section of the pulling mechanism 7 is shown. The semiconductor wafer 914 with the adhesive film can be picked up using conventional methods.

When the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1% to 20%, the semiconductor chip 914 with the film adhesive can be more easily picked up. When the intermediate layer 13 contains, for example, ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the ratio of the ethylene-vinyl acetate copolymer content in the intermediate layer to the total mass of the intermediate layer is 90% to 99.99% by mass, and the ratio of the siloxane compound content in the intermediate layer to the total mass of the intermediate layer is 0.01% to 10% by mass, the semiconductor chip 914 with the film adhesive can be more easily picked up.

In the above-mentioned method for manufacturing a semiconductor chip with a film adhesive, as a preferred embodiment, the following method for manufacturing a semiconductor chip with a film adhesive can be cited as an example, wherein the semiconductor chip with a film adhesive comprises a semiconductor chip and a film adhesive disposed on the inner surface of the semiconductor chip, and the semiconductor device manufacturing sheet comprises the substrate, the adhesive layer, the intermediate layer and the film adhesive; the manufacturing method comprises the following steps: while heating the semiconductor device manufacturing sheet, the film adhesive in the semiconductor device manufacturing sheet is adhered to the inner surface of the semiconductor wafer; The aforementioned semiconductor wafer with a film-like adhesive is cut into the entire area in the thickness direction from the circuit formation surface side to be divided, thereby producing semiconductor chips, and the aforementioned semiconductor device manufacturing sheet is cut into the thickness direction from the aforementioned film-like adhesive side to a region halfway through the aforementioned intermediate layer, and the aforementioned film-like adhesive is cut without cutting into the aforementioned adhesive layer, thereby obtaining a group of semiconductor chips with a film-like adhesive in which a plurality of semiconductor chips with a film-like adhesive are neatly arranged on the aforementioned intermediate layer; and the aforementioned semiconductor chip with a film-like adhesive is pulled off from the aforementioned intermediate layer and picked up (sometimes referred to as "manufacturing method 1" in this specification).

Another embodiment of a method for manufacturing a semiconductor chip with a film-like adhesive includes the following steps: attaching the inner surface of a semiconductor chip group in which a plurality of the aforementioned semiconductor chips are neatly arranged to the exposed surface of the aforementioned film-like adhesive of a sheet for manufacturing a semiconductor device, thereby obtaining a laminate consisting of the aforementioned substrate, the aforementioned adhesive layer, the aforementioned intermediate layer, the aforementioned film-like adhesive, and the aforementioned semiconductor chip group stacked in sequence; cutting the aforementioned film-like adhesive to obtain the semiconductor chip with the film-like adhesive; and pulling the aforementioned semiconductor chip with the film-like adhesive off from the aforementioned substrate, the aforementioned adhesive layer, and the aforementioned intermediate layer and picking it up.

FIG6 is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor wafer, which is used as a sheet for manufacturing semiconductor devices. The view shows how a semiconductor wafer is manufactured by dicing accompanied by the formation of a modified layer in the semiconductor wafer. FIG7 is a cross-sectional view schematically illustrating another example of a method for using a sheet for manufacturing semiconductor devices. The view shows how the sheet for manufacturing semiconductor devices is attached to a semiconductor wafer and then used. In this method, the sheet for manufacturing semiconductor devices is used as a wafer adhesive. Here, the method for using the sheet for manufacturing semiconductor devices 101 shown in FIG1 is used as an example.

First, before using the semiconductor device manufacturing sheet 101, as shown in FIG6A, a semiconductor wafer 9' is prepared and a back grinding tape (sometimes also called "surface protection tape") 8 is attached to the circuit forming surface 9a' of the semiconductor wafer 9'. In FIG6, the symbol W9 _' represents the width of the semiconductor wafer 9'.

Next, laser light (not shown) is irradiated onto the semiconductor wafer 9' by focusing it at a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in Figure 6B. The laser light is preferably irradiated onto the semiconductor wafer 9' from the inner surface 9b' side of the semiconductor wafer 9'.

The focus position at this time is the predetermined position for dividing (cutting) the semiconductor wafer 9', and is set in such a way that semiconductor chips of target size, shape and number are obtained from the semiconductor wafer 9'.

Next, a grinder (not shown) is used to grind the inner surface 9b' of the semiconductor wafer 9'. This adjusts the thickness of the semiconductor wafer 9' to the target value. The grinding force applied to the semiconductor wafer 9' is then utilized to separate the semiconductor wafer 9' at the location where the modified layer 90' is to be formed, thereby producing a plurality of semiconductor chips 9 as shown in FIG6C .

Unlike other areas of the semiconductor wafer 9', the modified layer 90' of the semiconductor wafer 9' is altered by the laser beam, weakening its strength. Therefore, by applying force to the semiconductor wafer 9' having the modified layer 90' formed thereon, the semiconductor wafer 9' is fractured at the location of the modified layer 90', thereby obtaining multiple semiconductor chips 9.

Through the above operation, the semiconductor wafer 9 to be used as the semiconductor device manufacturing sheet 101 is obtained. More specifically, through this step, a semiconductor wafer group 901 is obtained in which a plurality of semiconductor wafers 9 are fixed in an orderly manner on the back grinding tape 8.

When semiconductor chip cluster 901 is viewed from above, the planar shape formed by connecting the outermost portions of semiconductor chip cluster 901 (in this specification, this planar shape is sometimes referred to as the "planar shape of the semiconductor chip cluster") is identical to the planar shape of semiconductor wafer 9' when viewed from above in the same manner, or the difference between these planar shapes is negligible. In other words, the planar shape of semiconductor chip cluster 901 and the planar shape of semiconductor wafer 9' are substantially identical. Therefore, the width of the planar shape of semiconductor chip cluster 901, as shown in FIG6C , is considered to be the same as the width W ₉ ' of semiconductor wafer 9'. Furthermore, the maximum value of the width of the aforementioned planar shape of the semiconductor chip group 901 is considered to be the same as the maximum value of the width W _{9 ′} of the semiconductor wafer 9 ′.

Furthermore, here, the semiconductor wafer 9' is shown as being used to produce the semiconductor chip 9 according to the purpose. However, depending on the conditions when grinding the inner surface 9b' of the semiconductor wafer 9', sometimes a part of the semiconductor wafer 9' is not divided into the semiconductor chip 9.

Next, using the semiconductor chips 9 (semiconductor chip group 901) obtained above, semiconductor chips with film adhesive are manufactured. First, as shown in FIG7A , while heating a semiconductor device manufacturing sheet 101 with the release film 15 removed, the film adhesive 14 in the semiconductor device manufacturing sheet 101 is adhered to the inner surfaces 9b of all semiconductor chips 9 in the semiconductor chip group 901. In this case, the film adhesive 14 can also be adhered to an incompletely separated semiconductor wafer.

The maximum width _W13 of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 and the maximum width _W14 of the film adhesive 14 are exactly the same as the maximum width W9' of the semiconductor wafer 9 _' (in other words, the width of the semiconductor chip group 901), or are different but with slight errors and are basically the same.

At this time, the film adhesive 14 (semiconductor device manufacturing sheet 101) is attached to the semiconductor chip group 901 by the same method as the aforementioned manufacturing method 1 in which the film adhesive 14 (semiconductor device manufacturing sheet 101) is attached to the semiconductor wafer 9', except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

Next, the back grinding tape 8 is removed from the fixed semiconductor wafer group 901. Then, as shown in FIG7B , the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to the surface of the semiconductor device manufacturing sheet 101 (e.g., the first surface 12a of the adhesive layer 12) while cooling. The direction of expansion of the semiconductor device manufacturing sheet 101 is indicated by arrow _E1 . This expansion cuts the film adhesive 14 along the periphery of the semiconductor wafer 9.

This step yields a plurality of semiconductor chips 914 with film adhesive. Each of the semiconductor chips 914 includes a semiconductor chip 9 and a cut film adhesive 140 disposed on the inner surface 9b of the semiconductor chip 9. These semiconductor chips 914 with film adhesive are neatly aligned and fixed on the intermediate layer 13 of the laminate 10, forming a semiconductor chip group 910 with film adhesive. The semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained here are substantially the same as the semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained by the manufacturing method 1 described above.

As described above, when the semiconductor wafer 9' is divided, if a part of the semiconductor wafer 9' is not divided into semiconductor chips 9, the part is divided into semiconductor chips by performing this step.

The semiconductor device manufacturing sheet can also be used for cold expansion as follows: by expanding the semiconductor device manufacturing sheet at a temperature lower than room temperature in a direction parallel to the plane of the semiconductor device manufacturing sheet, the film adhesive can be cut. In this specification, "room temperature" refers to a temperature that is neither particularly cold nor hot, i.e., a normal temperature, such as 15°C to 25°C. The semiconductor device manufacturing sheet 101 is preferably expanded at a temperature of -5°C or higher but less than 23°C, more preferably at a temperature of -5°C to 5°C. By cooling and expanding the semiconductor device manufacturing sheet 101 in this manner (performing cold expansion), the film adhesive 14 can be cut more easily and with high precision.

The semiconductor device manufacturing sheet 101 can be expanded using known methods. For example, after securing the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not deposited (the aforementioned non-deposited area) to a jig such as a ring frame (not shown), the entire area of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are deposited is raised from the side of the substrate 11 in a direction from the substrate 11 toward the adhesive layer 12, thereby expanding the semiconductor device manufacturing sheet 101.

In FIG7B , the non-laminated region on the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated is generally parallel to the first surface 13a of the intermediate layer 13. However, when expanded by the lifting of the semiconductor device manufacturing sheet 101 as described above, the non-laminated region includes an inclined surface, the height of which decreases in a direction opposite to the lifting direction as it approaches the periphery of the adhesive layer 12.

In this step, the semiconductor device manufacturing sheet 101 is provided with an intermediate layer 13 (in other words, the film adhesive 14 before cutting is provided on the intermediate layer 13), and the film adhesive 14 is cut with high precision at the target position (in other words, along the periphery of the semiconductor chip 9), thereby suppressing cutting defects.

After expansion, as shown in FIG7C , the semiconductor chip 914 with the film adhesive is pulled off the intermediate layer 13 in the laminate 10 and picked up. The picking up process can be performed using the same method as described above in the first manufacturing method, and the picking up suitability is also the same as that in the first manufacturing method.

For example, in this step, when the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1% to 20%, the semiconductor chip 914 with the film adhesive can be more easily picked up. In addition, when the intermediate layer 13 contains, for example, ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the ratio of the ethylene-vinyl acetate copolymer content in the intermediate layer to the total mass of the intermediate layer is 90% to 99.99% by mass, and the ratio of the siloxane compound content in the intermediate layer to the total mass of the intermediate layer is 0.01% to 10% by mass, the semiconductor chip 914 with the film adhesive can be more easily picked up.

In the above-mentioned method for manufacturing a semiconductor chip with a film adhesive described above, as a preferred embodiment, the following method for manufacturing a semiconductor chip with a film adhesive can be cited, wherein the above-mentioned semiconductor chip with a film adhesive comprises a semiconductor chip and a film adhesive disposed on the inner surface of the above-mentioned semiconductor chip, and the above-mentioned sheet for manufacturing a semiconductor device comprises the above-mentioned substrate, adhesive layer, intermediate layer and film adhesive. The manufacturing method comprises the following steps: forming a modified layer inside the semiconductor wafer by irradiating laser light in a manner focused on a focal point set inside the semiconductor wafer; grinding the inner surface of the semiconductor wafer after forming the modified layer, and dividing the semiconductor wafer at the formation portion of the modified layer by utilizing the force applied to the semiconductor wafer during grinding to obtain a plurality of semiconductor wafers. The steps of forming a semiconductor chip group in a state where semiconductor chips are neatly arranged; heating the aforementioned semiconductor device manufacturing sheet while attaching the film adhesive in the semiconductor device manufacturing sheet to the inner surface of all semiconductor chips in the aforementioned semiconductor chip group; cooling the aforementioned semiconductor device manufacturing sheet after being attached to the aforementioned semiconductor chip while cooling the aforementioned semiconductor device manufacturing sheet at a temperature lower than room temperature along the direction relative to the semiconductor device manufacturing sheet. The method further comprises the steps of stretching the film-like adhesive in a direction parallel to the surface of the sheet to cut the film-like adhesive along the periphery of the semiconductor chip to obtain a group of semiconductor chips with film-like adhesive in which a plurality of semiconductor chips with film-like adhesive are neatly arranged on the intermediate layer; and pulling the semiconductor chips with film-like adhesive off the intermediate layer and picking them up (sometimes referred to as "manufacturing method 2" in this specification).

Thus far, both Manufacturing Method 1 and Manufacturing Method 2 have been described using the semiconductor device manufacturing sheet 101 shown in FIG. 1 as an example. However, other semiconductor device manufacturing sheets according to the present embodiment can also be used in the same manner. In such cases, additional steps may be added as needed based on the differences in the structure of the semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101, and the semiconductor device manufacturing sheet can be used.

Not limited to the cases of manufacturing methods 1 and 2, after obtaining the group of semiconductor chips with film adhesive, and before picking up the semiconductor chips with film adhesive, the laminate sheet can be expanded in a direction parallel to the surface (first surface) of the intermediate layer side relative to the adhesive layer. This state can then be maintained while heating the peripheral portion of the laminate sheet where the semiconductor chips with film adhesive (group of semiconductor chips with film adhesive) are not placed. This configuration allows the peripheral portion to shrink, and the distance between adjacent semiconductor chips on the laminate sheet, i.e., the kerf width, can be kept sufficiently wide and uniform. Furthermore, semiconductor chips with film-type adhesives can be more easily picked up. [Example]

The present invention will be described in more detail below with reference to specific embodiments. However, the present invention is not limited to the following embodiments.

[Raw Materials for Adhesive Composition Production] The raw materials used to produce the adhesive composition are shown below. [Polymer Component (a)] (a)-1: Acrylic resin (weight-average molecular weight 800,000, glass transition temperature 9°C) copolymerized with methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass). [Epoxy Resin (b1)] (b1)-1: Cresol novolac-type epoxy resin with an acryl group added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent weight 518 g/eq, number-average molecular weight 2100, unsaturated group content equal to epoxy group content). [Thermosetting Agent (b2)] (b2)-1: Aryl alkyl phenolic resin (Milex XLC-4L manufactured by Mitsui Chemicals, number average molecular weight 1100, softening point 63°C) [Filler (d)] (d)-1: Spherical silica (YA050C-MJE manufactured by Admatechs, average particle size 50 nm, methacrylate-treated silane) [Coupling Agent (e)] (e)-1: Silane coupling agent, 3-glycidyloxypropylmethyldiethoxysilane (KBE-402 manufactured by Shin-Etsu Polysilicone) [Crosslinking Agent (f)] (f)-1: Toluene diisocyanate crosslinking agent (Coronate L”) [Antistatic Agent (g)] (g)-1: Reduced graphene oxide ("N002-PDR" manufactured by Angstrom Materials)

[Example 1] [Production of a Sheet for Semiconductor Device Manufacturing] [Production of a Substrate] Low-density polyethylene (LDPE, "Sumikasen L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder. The melt was extruded using a T-die method. The extrudate was then stretched biaxially using cooling rolls to produce an LDPE substrate (110 μm thick).

[Preparation of Adhesive Layer] A non-energy ray-curable adhesive composition was prepared. The non-energy ray-curable adhesive composition contained an acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinking agent ("BXX 5640" manufactured by Toyo-Chem) (1 part by mass).

Next, a release film of polyethylene terephthalate film with a silicone-treated release layer on one side was used. The adhesive composition obtained above was applied to the release-treated surface and dried at 100°C for 2 minutes to produce a non-energy ray-curable adhesive layer (10 μm thick).

[Preparation of the Intermediate Layer] 15 g of ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 30,000, content of constituent units derived from vinyl acetate 25% by mass) was dissolved in 85 g of tetrahydrofuran at room temperature. 1.5 g of a siloxane compound (polydimethylsiloxane, BYK-333 manufactured by BYK Chemie Japan, containing 45 to 230 constituent units of the formula "-Si(-CH ₃ ) ₂ -O-" per molecule) was added to the resulting solution and stirred to prepare a composition for forming the intermediate layer.

A polyethylene terephthalate film having one side treated with silicone for release was used. The intermediate layer-forming composition obtained above was applied to the release-treated surface and dried at 70°C for 5 minutes to prepare an intermediate layer (20 μm thick).

[Preparation of Film Adhesive] A thermosetting adhesive composition was prepared, comprising a polymer component (a)-1 (100 parts by mass), an epoxy resin (b1)-1 (10 parts by mass), a thermosetting agent (b2)-1 (1.5 parts by mass), a filler (d)-1 (75 parts by mass), a coupling agent (e)-1 (0.5 parts by mass), a crosslinking agent (f)-1 (0.5 parts by mass), and an antistatic agent (g)-1 (5.6 parts by mass).

Next, a release film of polyethylene terephthalate film with one side treated with polysilicone was used. The adhesive composition obtained above was applied to the release-treated surface and dried at 80°C for 2 minutes to produce a thermosetting film-like adhesive (7 μm thick).

[Production of a Sheet for Semiconductor Device Manufacturing] The exposed surface of the adhesive layer obtained above, opposite to the side with the release film, is bonded to one surface of the substrate obtained above, thereby producing a first intermediate laminate having a release film (in other words, a support sheet having a release film). The exposed surface of the film-like adhesive obtained above, opposite to the side with the release film, is bonded to the exposed surface of the intermediate layer obtained above, opposite to the side with the release film, to produce a second intermediate laminate having a release film (a laminate of the release film, intermediate layer, film-like adhesive, and release film).

Next, a circular cutting blade is used to punch the second intermediate laminate with the release film, from the release film on the intermediate layer side to the film adhesive. The punching area is a circular ring (with an inner diameter of 152.5 mm and an outer diameter of 186.75 mm) extending from the center of the second intermediate laminate. The punched portion (intermediate layer, film adhesive, and release film) is then removed. This removed portion corresponds to a portion of the trench in the semiconductor device manufacturing wafer. The inner side of the removed annular portion corresponds to the label portion of the semiconductor device manufacturing sheet. In this manner, a second intermediate multilayer product with a release film is produced. The second intermediate multilayer product with a release film is constructed by laminating a circular (305 mm diameter) film adhesive (7 μm thick), an intermediate layer (20 μm thick), and a release film in this order in the thickness direction of the release film on the film adhesive side.

Next, the release film is removed from the first intermediate laminate (support sheet) with the release film, exposing one side of the adhesive layer. Furthermore, the circular release film is removed from the second intermediate laminate with the release film, exposing one side of the intermediate layer. Then, the newly exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly exposed surface of the intermediate layer in the second intermediate laminate. The resulting laminate, consisting of the substrate, adhesive layer (also known as the support sheet), interlayer, and film adhesive, is punched from the substrate side using a circular cutting blade (with an inner diameter of 370mm) so that the support sheet forms a circular shape (370mm in diameter) and is concentric with the circular film adhesive and interlayer. The punched annular portion (the laminate consisting of the substrate, adhesive layer, interlayer, and film adhesive) is removed. This removed annular portion corresponds to a portion of the trench in the semiconductor device manufacturing sheet. The outer side of the annular portion corresponds to the outer periphery of the semiconductor device manufacturing sheet. Through the above operation, a semiconductor device manufacturing sheet was obtained. This semiconductor device manufacturing sheet has a label portion and an outer periphery formed on a release film by laminating a substrate (110 μm thick), an adhesive layer (10 μm thick), an intermediate layer (20 μm thick), and a film-like adhesive (7 μm thick) in this order in the thickness direction.

[Evaluation of Semiconductor Device Manufacturing Sheets] [Calculation of the Silicon Concentration Ratio on the Film Adhesive Side of the Interlayer] During the manufacturing process of the semiconductor device manufacturing sheet described above, the exposed surface of the interlayer, prior to lamination with the adhesive layer, was analyzed by XPS. The concentrations of carbon (C), oxygen (O), nitrogen (N), and silicon (Si) (atomic %) were measured. Based on the measured values, the ratio (%) of the silicon concentration to the combined concentration of carbon, oxygen, nitrogen, and silicon was calculated. XPS analysis was performed using an X-ray photoelectron spectrometer (Quantra SXM, manufactured by Ulvac) at an irradiation angle of 45°, an X-ray beam diameter of 20μmφ, and an output of 4.5W. The results are shown together with the ratios (%) of the concentrations of other elements in the "Ratios (%) of element concentrations in the middle layer" column in Table 1.

[Evaluation of the Effect of Suppressing Chip Generation During Blade Dicing] [Manufacturing of Silicon Wafers with Film Adhesive] The release film was removed from the semiconductor device manufacturing wafer obtained above. A silicon wafer (300 mm diameter, 75 μm thickness) whose inner surface had been dry-polished was used. Using a taping machine ("Adwill RAD2500" manufactured by Lintec), the semiconductor device manufacturing wafer was heated to 60°C while being bonded to the inner surface (polished surface) of the wafer using the film adhesive. Thus, a laminate is obtained in which the substrate, adhesive layer, intermediate layer, film adhesive and silicon wafer are sequentially stacked in the thickness direction thereof (a laminate is obtained in which the aforementioned laminate sheet, film adhesive and silicon wafer are sequentially stacked in the thickness direction thereof).

Next, the area near the periphery of the first surface of the adhesive layer in the laminate, where the intermediate layer is not provided (the aforementioned non-laminated area), was fixed to a ring frame for wafer dicing. Next, dicing was performed using a dicing device (Disco's "DFD6361"), thereby separating the silicon wafer and also severing the film adhesive, resulting in 8mm x 8mm silicon chips. The dicing was performed as follows: the blade rotation speed was set to 30,000 rpm and the blade movement speed was set to 30 mm/sec. The blade was used to cut the semiconductor device manufacturing wafer from the film adhesive surface of the semiconductor device manufacturing wafer to the midway area of the intermediate layer (that is, the entire area in the thickness direction of the film adhesive and the area from the film adhesive side surface to the midway area of the intermediate layer). The blade used was the "Z05-SD2000-D1-90 CC" manufactured by Disco. By the above operation, a group of silicon wafers with film adhesives in the following state is obtained: a plurality of silicon wafers with film adhesives having a silicon wafer and a film adhesive disposed on the inner surface of the silicon wafer after cutting are neatly arranged and fixed on the middle layer in the aforementioned laminate by the film adhesive.

[Evaluation of Chip Generation Suppression Effect] Using a digital microscope (Keyence VH-Z100), the silicon wafers with the film-like adhesive obtained above were observed from above the wafer side to check for chip generation. A score of "A" indicated no chip generation, while a score of "B" indicated slight chip generation. The results are shown in Table 1.

[Evaluation of the Cutting Properties of Film Adhesives During Expansion] [Manufacturing Silicon Wafers with Film Adhesives] A circular silicon wafer with a diameter of 300 mm and a thickness of 775 μm was used. Back grinding tape (Adwill E-3100TN, manufactured by Lintec) was attached to one side of the wafer. Next, a laser irradiation device (DFL73161, manufactured by Disco) was used to irradiate the wafer with laser light focused on a focal point set within the wafer, thereby forming a modified layer within the wafer. The focal point was set so that a large number of 8 mm x 8 mm silicon chips were obtained from the wafer. Laser light is then applied to the other side of the silicon wafer (the side not attached to the back grinding tape). Then, a grinder is used to grind this other side of the silicon wafer, adjusting its thickness to 30μm. The grinding force is then used to separate the silicon wafer at the site where the modified layer will form, producing multiple silicon wafers. This results in a cluster of silicon wafers neatly aligned and fixed on the back grinding tape.

Next, using a taping machine ("Adwill RAD2500" manufactured by Lintec), the obtained semiconductor device manufacturing sheet was heated to 60°C while the film-like adhesive in the sheet was applied to the other side (in other words, the ground surface) of all the silicon wafers (silicon wafer group). After being attached to the silicon wafer group, the area near the periphery of the adhesive layer on the first side of the semiconductor device manufacturing sheet, where the intermediate layer was not provided (the aforementioned non-laminated area), was fixed to a wafer dicing ring frame.

Next, the back grinding tape was removed from the fixed silicon wafer group. Next, using a fully automated die separation machine (Disco's "DDS2300"), the semiconductor device manufacturing wafer was cooled in a 0°C environment while being expanded parallel to the surface of the semiconductor device manufacturing wafer, thereby cutting the film adhesive along the periphery of the silicon wafer. At this time, by fixing the periphery of the semiconductor device manufacturing wafer, the entire area of the semiconductor device manufacturing wafer where the intermediate layer and film adhesive were deposited was raised from the substrate side to a height of 15 mm for expansion. In this way, a group of silicon wafers with film adhesives in the following state is obtained: a plurality of silicon wafers with film adhesives having a silicon wafer and a cut film adhesive disposed on the other surface (grinded surface) are neatly arranged and fixed on the middle layer.

After temporarily releasing the expansion of the semiconductor device manufacturing sheet, the laminated product (i.e., the laminated sheet) consisting of the substrate, adhesive layer, and intermediate layer is expanded at room temperature in a direction parallel to the first surface of the adhesive layer. Furthermore, while maintaining this expanded state, the periphery of the laminated sheet, where the silicon wafer with the film-like adhesive is not placed, is heated. This shrinks the periphery, and the width of the kerf between adjacent silicon wafers on the laminated sheet is maintained at or above a certain value.

[Evaluation of the Cutting Properties of Film Adhesives] During the production of the aforementioned silicon wafer group with film adhesives, the obtained silicon wafer group with film adhesives was observed from above the side of the silicon wafer using a digital microscope ("VH-Z100" manufactured by Keyence). The number of fracture lines that would normally form in a semiconductor device manufacturing sheet due to expansion, including multiple fracture lines extending in one direction and multiple fracture lines extending in a direction perpendicular to that direction, was also determined, and the film adhesive's cutability was evaluated according to the following evaluation criteria. The results are shown in Table 1. [Evaluation Criteria] A: The total number of fracture lines that would normally form in a semiconductor device manufacturing sheet due to expansion and the number of fracture lines that would normally form in a semiconductor device manufacturing sheet due to expansion and expansion was 5 or fewer. B: The total number of cut lines where the film adhesive was not actually formed and the cut lines where the film adhesive was not completely formed is 6 or more.

[Evaluation of Film Adhesive Scattering Suppression] To evaluate the aforementioned film adhesive's cutting performance, a group of silicon wafers coated with film adhesive were visually inspected from above the wafer side. Furthermore, after expansion, the film adhesive was checked for any scattered adhesion to the circuit-forming surface of the wafers. The film adhesive's scattering suppression performance was evaluated according to the following evaluation criteria. The results are shown in Table 1. [Evaluation Criteria] A: The number of silicon wafers with film adhesive adhesion observed on the circuit-forming surface was zero. B: The number of silicon wafers with film adhesive adhesion observed on the circuit-forming surface was one or more.

[Evaluation of Interlayer Cracks] To evaluate the cutability of the film adhesive described above, a group of silicon wafers coated with the film adhesive were observed from above the wafer side using a digital microscope (Keyence VH-Z100). Furthermore, the presence of cracks in the interlayer after expansion was confirmed, and the interlayer cracks were evaluated according to the following evaluation criteria. The results are shown in Table 1. [Evaluation Criteria] A: The number of silicon wafers coated with the film adhesive with cracks observed was zero. B: The number of silicon wafers coated with the film adhesive with cracks observed was one or more.

[Evaluation of Pickup Performance of Expanded Film-Adhesive Silicon Wafers] Following the evaluation of the aforementioned film-adhesive cutting performance, a group of film-adhesive silicon wafers and a die-bonding device ("PU100" manufactured by Fasford Technology) were used to pick up film-adhesive silicon wafers from the middle layer of the laminated wafer at a lift height of 250 μm, a lift speed of 5 mm/s, and a lift time of 500 ms. The evaluation was "A" if all film-adhesive silicon wafers could be picked up normally, and "B" if more than one film-adhesive silicon wafer could not be picked up normally. The results are shown in Table 1.

[Measurement of T-Peel Strength Between Interlayer and Film Adhesive] The release film was removed from the semiconductor device manufacturing sheet obtained above. The entire surface of the semiconductor device manufacturing sheet, with the film adhesive exposed, was attached to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A) PL thin 8LK" manufactured by Lintec). The resulting laminate was cut into 50 mm x 100 mm pieces to prepare test pieces. In accordance with JIS K6854-3, the laminate of the substrate, adhesive layer, and intermediate layer (i.e., the laminated sheet) was peeled off from the laminate of the film adhesive and adhesive tape in a T-shaped pattern. The maximum peel force (mN/50mm) measured at this time was used as the T-shaped peel strength. The peel speed was set at 50 mm/min, and the measurements were conducted at 23°C and 50% RH. The results are shown in Table 1.

Roll Production: The label portion and peripheral portion of the semiconductor device manufacturing sheet, consisting of a laminate of substrate, adhesive layer, intermediate layer, and film adhesive, are arranged in a row on a strip of release film (100m in length) at predetermined positions (the distance between the centers of the circular film adhesive of the label portion is 378mm). The roll is then wound with the substrate-laminated side of the semiconductor device manufacturing sheet facing the core. The roll is wound in the direction of the long side of the release film strip.

[Evaluation of Roll Marks on Semiconductor Device Manufacturing Sheets] Starting from the core of the roll produced above, the second through fifth semiconductor device manufacturing sheets were visually inspected for the presence of circular roll marks (marks resulting from the difference in height between the circular roll mark and the intermediate layer) on the surface of the film adhesive, according to the following evaluation criteria. The results are shown in Table 1. [Evaluation Criteria] A: No roll marks observed. B: Roll marks observed.

[Example 2] A semiconductor device manufacturing sheet and roll were produced and evaluated using the same method as Example 1, except that the amount of interlayer-forming composition applied was reduced and the thickness of the interlayer was set to 3 μm instead of 20 μm. The results are shown in Table 1.

[Example 3] A semiconductor device manufacturing sheet and roll were produced and evaluated using the same method as Example 1, except that the amount of interlayer-forming composition applied was increased and the thickness of the interlayer was set to 100 μm instead of 20 μm. The results are shown in Table 1.

[Example 4] When preparing the interlayer-forming composition, the aforementioned siloxane compound was omitted, and the amount of ethylene-vinyl acetate copolymer used was reduced to 16.5 g instead of 15 g. (In other words, the siloxane compound was replaced with the same mass of the aforementioned ethylene-vinyl acetate copolymer, and only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran.) A wafer and roll for semiconductor device manufacturing were produced and evaluated using the same method as in Example 1, except for these differences. The results are shown in Table 1. "-" in the additive column in Table 1 indicates that the additive was not used.

[Example 5] During the stamping process on the second intermediate laminate, the stamping area was changed to a ring centered at the center of the second intermediate laminate (with an inner diameter of 162.5 mm and an outer diameter of 186.75 mm). The diameter of the resulting film adhesive and intermediate layer was changed from 305 mm to 315 mm. A semiconductor device manufacturing sheet and roll were produced and evaluated using the same method as in Example 1, except for these changes. The results are shown in Table 1.

[Reference Example 1] After stamping the second intermediate layer, in addition to the annular trench portion, the outer peripheral portion outside the trench was also removed to eliminate the outer peripheral portion. A wafer and roll for semiconductor device manufacturing were produced and evaluated using the same method as in Example 1, except for this modification. The results are shown in Table 1.

Comparative Example 1: In the preparation of the interlayer-forming composition, an ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 200,000, content of vinyl acetate-derived units 25% by mass) was used in place of the aforementioned ethylene-vinyl acetate copolymer. The amount of interlayer-forming composition applied was increased, and the thickness of the interlayer was set to 80 μm instead of 20 μm. A semiconductor device manufacturing sheet and roll were produced and evaluated using the same method as in Example 1, except for the above-mentioned differences. The results are shown in Table 1.

Comparative Example 2: Semiconductor device manufacturing sheets and rolls were produced and evaluated using the same method as in Example 1, except that the interlayer-forming composition was prepared using an equivalent mass of ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 200,000, content of vinyl acetate-derived units 25% by mass) instead of the aforementioned ethylene-vinyl acetate copolymer. The results are shown in Table 1.

[Comparative Example 3] A semiconductor device manufacturing sheet and roll were produced and evaluated using the same method as in Example 1, except that no interlayer was provided. The results are shown in Table 1. The "-" in the Additive column in Table 1 indicates that no interlayer was provided.

[Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Reference Example 1 Comparative example 1 Comparative example 2 Comparative example 3 Composition of the middle layer principal component Ingredient name EVA EVA EVA EVA EVA EVA EVA EVA - Weight average molecular weight 30,000 30,000 30,000 30,000 30,000 30,000 20000 20000 - Content (mass%) 90.9 90.9 90.9 100 90.9 90.9 90.9 90.9 - additives Ingredient name Dimethicone Dimethicone Dimethicone - Dimethicone Dimethicone Dimethicone Dimethicone - Content (mass%) 9.1 9.1 9.1 - 9.1 9.1 9.1 9.1 - Thickness (μm) 20 3 100 20 20 20 80 20 - Wafer diameter (mm) 300 300 300 300 300 300 300 300 300 Diameter of film adhesive and intermediate layer (mm) 305 305 305 305 315 305 305 305 305 Evaluation results Peripheral film adhesive and middle layer have have have have have without have have - The ratio of element concentration in the middle layer (%) C 66 66 66 81 66 66 70 70 - O 25 25 25 9 25 25 twenty two twenty two - N 0 0 0 0 0 0 0 0 - Si 9 9 9 0 9 9 8 8 - Suppresses the generation of curling marks A A A A A B A A B Suppresses the generation of cutting chips during blade cutting A A A A A A B B B Cutting properties of film adhesives during expansion A A A A A A A B B Scattering suppression effect of film adhesives A A A A B A A A A Rupture of the middle layer A B A A A A A A - Pickup performance of silicon wafers with film adhesive after expansion A A B B A A A A B T-peel strength between the middle layer and DAF (mN/50mm) 100 100 60 200 100 100 60 100 >1000

As shown by the above results, the rolls of the semiconductor device manufacturing sheets of Examples 1 to 5, in which the peripheral portion is provided on the outer side of the label portion, suppress the generation of winding marks.

Furthermore, the semiconductor device manufacturing sheets of Examples 1 through 5 suppress the generation of cutting chips during blade dicing and minimize poor film adhesive cutting during expansion, resulting in excellent semiconductor wafer singulation suitability. In the semiconductor device manufacturing sheets of Examples 1 through 5, the weight-average molecular weight of the ethylene-vinyl acetate copolymer contained as a main component in the intermediate layer of the semiconductor device manufacturing sheet is 30,000. Furthermore, the poor cutting performance of the film adhesive during expansion in Comparative Example 2 is believed to be due to the high weight-average molecular weight and high peel strength (it is believed that the high peel strength causes the film adhesive to follow the intermediate layer). In this regard, it is speculated that although Examples 1 to 2, Examples 4 to 5, and Reference Example 1 have high peeling forces, they have good chopping properties due to their low weight average molecular weight.

In contrast, in Comparative Examples 1 and 2, where the weight-average molecular weight was 200,000, the generation of cutting chips was not suppressed during blade dicing, resulting in poor semiconductor wafer separation suitability. In Comparative Example 3, where no intermediate layer was provided, it is believed that the blade reached the substrate, generating cutting chips originating from the substrate.

In Examples 1 to 4, the difference between the diameter of the film adhesive in the label portion of the semiconductor device sheet and the diameter of the semiconductor wafer was less than 10 mm (5 mm), indicating that the film adhesive had good scattering suppression performance. In Example 5, the difference between the maximum width of the film adhesive in the label portion and the maximum width of the semiconductor wafer was greater than 10 mm (15 mm), indicating that the film adhesive had poor scattering suppression performance.

In the semiconductor device sheets of Examples 1 and 3 to 5 in which the thickness of the intermediate layer is 15 μm to 80 μm inclusive, cracking of the intermediate layer is suppressed.

The semiconductor device sheets of Examples 1, 2, and 5 have excellent pickup properties for silicon wafers with film adhesives after expansion.

Among the semiconductor device sheets containing the aforementioned siloxane compound in the interlayer of the semiconductor device manufacturing sheet, the concentration of the aforementioned silicon in the interlayer of Examples 1, 2, and 5, as determined by X-ray photoelectron spectroscopy, was 1% to 20%, and the T-peel strength was moderately low, at 100 mN/50 mm or less, indicating excellent pickup performance. These evaluation results for Examples 1, 2, 4, and 5 matched the pickup performance evaluation results for the aforementioned silicon wafers with film adhesives.

Although the T-peel strength of the semiconductor manufacturing sheet of Example 3 is moderately low at 60mN/50mm or less, the thickness of the intermediate layer is as thick as 100μm. Therefore, it can be considered that under the conditions for evaluating the pickup performance of the embodiment, the thick intermediate layer mitigates the lifting force, resulting in poor pickup performance.

Furthermore, the reason why the aforementioned T-peel strength of the semiconductor device manufacturing sheet of Example 3 is smaller than that of the semiconductor device manufacturing sheet of Example 1 is presumed to be as follows. The ratio of the content of the siloxane compound to the total mass of the intermediate layer (mass %) is the same in the semiconductor device manufacturing sheets of Example 1 and Example 3. However, the content (mass percentage) of the siloxane compound in the intermediate layer is affected by the increase in thickness, and Example 3 has more than Example 1. Furthermore, in the intermediate layer, the siloxane compound tends to be concentrated on both sides of the intermediate layer and the surrounding areas. Therefore, it can be considered that the amount of the siloxane compound concentrated on both sides of the intermediate layer and the surrounding areas is also greater in Example 3 than in Example 1.

Furthermore, in any of the analyses, no nitrogen was detected when XPS analysis was performed on the exposed surface of the intermediate layer.

Furthermore, the only difference between the semiconductor device manufacturing sheets of Comparative Examples 1 and 2 is the thickness of the intermediate layer. The relationship between the T-peel strength between the intermediate layer and the film adhesive in Comparative Examples 1 and 2 shows the same tendency as that in Examples 1 and 2.

Each component and combination of components in each embodiment is an example, and additions, omissions, substitutions, and other modifications of components can be made without departing from the scope of the present invention. In addition, the present invention is not limited to each embodiment, but only to the scope of the claims (patent application scope). [Industrial Applicability]

The present invention can be used to manufacture semiconductor devices.

1: Support sheet 7: Pull-off mechanism 8: Back grinding tape 9: Semiconductor chip 9': Semiconductor wafer 9a: Circuit-forming surface of semiconductor chip 9a': Circuit-forming surface of semiconductor wafer 9b: Inner surface of semiconductor chip 9b': Inner surface of semiconductor wafer 10: Laminated sheet 11: Substrate 11a: First surface of substrate 12: Adhesive layer 12a: Surface of the adhesive layer opposite to the substrate (first surface of the adhesive layer) 13: Intermediate layer 13a: Surface of the intermediate layer opposite to the adhesive layer (first surface of the intermediate layer) 14: Film adhesive 14a: First surface of film adhesive 15, 16: Peel film 30: Label portion 32: Peripheral portion 34: Groove 35: First groove 36: Second groove 101: Semiconductor device manufacturing sheet 102: Second intermediate multilayer 103: Second intermediate multilayer workpiece 104: First intermediate multilayer 105: Multilayer 110: Roller 90': Modified layer 901: Semiconductor chip group 140: Film adhesive after cutting 910: Semiconductor chip group with film adhesive 914: Semiconductor chip with film adhesive C1, C2, C3, C4: Cutting portion E ₁ : Expansion direction H ₃₀ : Thickness H of the semiconductor device manufacturing sheet at the label portion ₃₂ : Thickness P of the semiconductor device manufacturing sheet at the periphery: P in the pull-off direction ₃₀ : Unit W _9' : Width of the semiconductor wafer W ₁₃ : Width of the intermediate layer W ₁₄ : Width of the film adhesive W ₃₄ : Width of the trench

[Figure 1] is a schematic cross-sectional view of a semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 2] is a plan view of a semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 3A] is a schematic diagram illustrating an example of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 3B] is a schematic diagram illustrating an example of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 3C] is a schematic diagram illustrating an example of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 3D] is a schematic diagram illustrating an example of a method for manufacturing a semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 4] is a cross-sectional view schematically illustrating a roll of a semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 5A] is a cross-sectional view schematically illustrating an example of a method for using the semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 5B] is a cross-sectional view schematically illustrating an example of a method for using the semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 5C] is a cross-sectional view schematically illustrating an example of a method for using the semiconductor device manufacturing sheet according to an embodiment of the present invention. [Figure 6A] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip. [Figure 6B] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip. Figure 6C is a cross-sectional view schematically illustrating one example of a method for manufacturing a semiconductor chip. Figure 7A is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet according to one embodiment of the present invention. Figure 7B is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet according to one embodiment of the present invention. Figure 7C is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet according to one embodiment of the present invention.

1: Support sheet

11: Base Material

11a: First side of substrate

12: Adhesive layer

12a: The surface of the adhesive layer opposite to the side with the substrate (the first surface of the adhesive layer)

13:Middle layer

13a: The surface of the intermediate layer opposite to the side with the adhesive layer (the first surface of the intermediate layer)

14: Film adhesive

14a: The first side of the film adhesive

15: Peeling membrane

30: Label Department

32: Peripheral part

34: Groove

101: Sheet for semiconductor device manufacturing

_H30 : Thickness of the semiconductor device manufacturing sheet at the label portion

_H32 : Thickness of the semiconductor device manufacturing sheet at the peripheral portion

W ₁₃ : Width of the middle layer

W ₁₄ : Width of film adhesive

W ₃₄ : Groove width

Claims (12)

A sheet for manufacturing semiconductor devices comprises: a label portion, including a portion for attachment to a semiconductor wafer or semiconductor chip; and a peripheral portion, at least a portion disposed outside the label portion. The label portion and the peripheral portion comprise a substrate, an adhesive layer, an intermediate layer, and a film adhesive, wherein the adhesive layer, the intermediate layer, the film adhesive, and a release film are sequentially deposited on the substrate. A trench is provided between the label portion and the peripheral portion, where the intermediate layer and the film adhesive are not deposited. The intermediate layer contains, as a main component, a non-silicone resin having a weight-average molecular weight of 100,000 or less. The semiconductor device manufacturing sheet as claimed in claim 1, wherein the difference between the maximum thickness of the semiconductor device manufacturing sheet in the label portion and the maximum thickness of the semiconductor device manufacturing sheet in the peripheral portion is 3 μm or less. In the semiconductor device manufacturing sheet as recited in claim 1 or 2, the maximum width of the film adhesive of the label portion in a direction parallel to the attachment surface to the semiconductor wafer or semiconductor chip is 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. In the semiconductor device manufacturing sheet according to claim 1 or 2, the thickness of the intermediate layer of the label portion is not less than 15 μm and not more than 80 μm. The semiconductor device manufacturing sheet according to claim 1 or 2, wherein the content of the non-silicone resin in the intermediate layer is 50% by mass or more relative to the total mass of the intermediate layer. The semiconductor device manufacturing sheet as recited in claim 1 or 2, wherein when the surface of the intermediate layer on the film adhesive side is analyzed by X-ray photoelectron spectroscopy, the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen, and silicon is 1% to 20%. The semiconductor device manufacturing sheet as claimed in claim 1 or 2, wherein the non-silicone resin comprises ethylene vinyl acetate copolymer. The semiconductor device manufacturing sheet as claimed in claim 1 or 2, wherein the intermediate layer comprises an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound; wherein the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% by mass to 99.99% by mass relative to the total mass of the intermediate layer; and wherein the content of the siloxane compound in the intermediate layer is 0.01% by mass to 10% by mass relative to the total mass of the intermediate layer. The semiconductor device manufacturing sheet as recited in claim 1 or 2, wherein the semiconductor device manufacturing sheet is subjected to cold expansion, wherein the cold expansion is performed at a temperature lower than room temperature in a direction parallel to the plane of the semiconductor device manufacturing sheet, thereby cutting the film adhesive. The semiconductor device manufacturing sheet as recited in claim 1 or 2 comprises a strip of the aforementioned peeling film having the aforementioned label portion and the aforementioned peripheral portion, and a roll formed by rolling the strip of the peeling film with the aforementioned label portion and the aforementioned peripheral portion as the inner side. A method for manufacturing a semiconductor device manufacturing sheet according to any one of claims 1 to 10, comprising: a lamination step of laminating a first intermediate laminate comprising the substrate and the adhesive layer to a second intermediate laminate comprising the intermediate layer and the film adhesive; and a processing step of removing a portion of the film adhesive from the second intermediate laminate by stamping, thereby forming the label portion, the trench, and the peripheral portion. A method for manufacturing a semiconductor chip with a film-like adhesive comprises the following steps: Laminating a semiconductor wafer or a semiconductor chip on the side of the film-like adhesive of a semiconductor device manufacturing sheet as recited in any one of claims 1 to 10 to obtain a laminate; and Cutting the film-like adhesive, or the semiconductor wafer and the film-like adhesive, along the periphery of the semiconductor chip to obtain a semiconductor chip with a film-like adhesive.