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TWI789480B - Wafer Evaluation Method - Google Patents

Wafer Evaluation Method Download PDF

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Publication number
TWI789480B
TWI789480B TW108100993A TW108100993A TWI789480B TW I789480 B TWI789480 B TW I789480B TW 108100993 A TW108100993 A TW 108100993A TW 108100993 A TW108100993 A TW 108100993A TW I789480 B TWI789480 B TW I789480B
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Taiwan
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wafer
grinding
unit
state
back surface
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TW108100993A
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Chinese (zh)
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TW201931484A (en
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廣澤俊一郎
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B17/00Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
    • G01B17/08Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring roughness or irregularity of surfaces
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/28Measuring arrangements characterised by the use of mechanical techniques for measuring roughness or irregularity of surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • A Measuring Device Byusing Mechanical Method (AREA)

Abstract

提供一種可以利用簡單的構成來評價晶圓的磨削面的狀態之晶圓的評價裝置、以及晶圓的評價方法。 Provided are a wafer evaluation apparatus capable of evaluating the state of a ground surface of a wafer with a simple configuration, and a wafer evaluation method.

本實施形態之評價裝置具備:旋轉工作台,保持晶圓;精磨削單元,磨削晶圓;測定針,接觸於已藉由精磨削單元磨削之晶圓的背面;移動組件,可移動地保持測定針;及儲存部,在已使測定針接觸於背面的狀態下,將使測定針與背面相對地移動時產生之聲音作為該背面之粗糙度資訊來儲存。 The evaluation device of this embodiment is equipped with: a rotary table for holding a wafer; a fine grinding unit for grinding the wafer; a measuring needle for contacting the back surface of the wafer ground by the fine grinding unit; and a moving unit for The measuring needle is held in a movable manner; and the storage unit stores, as the roughness information of the back surface, a sound generated when the measuring needle is moved relative to the back surface in a state where the measuring needle is brought into contact with the back surface.

Description

晶圓的評價方法 Wafer Evaluation Method 發明領域 field of invention

有關於一種對晶圓的磨削面的狀態進行評價之晶圓的評價裝置、以及晶圓的評價方法。 The present invention relates to a wafer evaluation device and a wafer evaluation method for evaluating the state of a ground surface of a wafer.

發明背景 Background of the invention

一般來說,正面形成有半導體元件之由矽等構成的半導體晶圓、或形成有光元件之由藍寶石、SiC(碳化矽)等構成的光元件晶圓等之各種晶圓,是藉由磨削磨石來磨削背面側。作為加工這種晶圓的加工裝置,已知有下述的裝置:其具有分別保持晶圓的複數個保持工作台、配置有複數個保持工作台的旋盤、藉由旋盤旋轉而依序定位到一個保持工作台的上方的粗磨削用的磨削組件、及精磨削用的磨削組件,並將1片晶圓以進行粗磨削及精磨削的順序來連續加工(例如,參照專利文獻1)。在這種加工裝置中,會有在進行過精磨削後,為了評價晶圓的品質,而對晶圓的磨削面的狀態(粗糙度)進行確認的情況。 In general, various wafers such as semiconductor wafers made of silicon, etc., on which semiconductor elements are formed on the front surface, or optical element wafers made of sapphire, SiC (silicon carbide), etc., on which optical elements are formed, are processed by grinding. A sharpening stone is used to sharpen the back side. As a processing device for processing such a wafer, there is known a device that has a plurality of holding tables that hold wafers respectively, a turntable that is equipped with a plurality of holding tables, and that is sequentially positioned by the rotation of the turntable. A grinding unit for rough grinding and a grinding unit for fine grinding held on the top of the workbench, and 1 wafer is processed continuously in the order of rough grinding and fine grinding (for example, refer to Patent Document 1). In such a processing apparatus, after finish grinding, the state (roughness) of the ground surface of the wafer may be checked in order to evaluate the quality of the wafer.

晶圓之磨削面狀態的確認,是從加工裝置取出晶圓並以專門的粗糙度測定器來進行。作為這種粗糙度測定器,已有下述的測定器被提出:具備在上下方向移動自如地構成的平行連桿機構,並在此平行連桿機構之可動 側的下側安裝觸針,且於可動側的上側安裝反射鏡,並以雷射干渉計檢測該反射鏡之移位量(例如,參照專利文獻2)。 The status of the ground surface of the wafer is confirmed by taking out the wafer from the processing equipment and using a dedicated roughness tester. As such a roughness measuring device, the following measuring device has been proposed: a parallel link mechanism configured to move freely in the vertical direction, and the movable parallel link mechanism A stylus is installed on the lower side of the side, and a mirror is installed on the upper side of the movable side, and the displacement of the mirror is detected by a laser interferometer (for example, refer to Patent Document 2).

先前技術文獻 prior art literature 專利文獻 patent documents

專利文獻1:日本專利特開2009-158536號公報 Patent Document 1: Japanese Patent Laid-Open No. 2009-158536

專利文獻2:日本專利特開2000-018935號公報 Patent Document 2: Japanese Patent Laid-Open No. 2000-018935

發明概要 Summary of the invention

在上述之粗糙度檢測器中,雖然一方面可以精密地測定晶圓之磨削面的狀態,另一方面卻必須將已磨削之晶圓移動至與加工裝置各別配置的粗糙度測定器,因此會使作業工序變得煩雜。為此,已出現下述要求:不使用專門的粗糙度測定器,而以簡單的構成來評價晶圓的磨削面的狀態。 In the above-mentioned roughness detector, although the state of the ground surface of the wafer can be precisely measured, on the other hand, it is necessary to move the ground wafer to the roughness detector separately arranged from the processing device. , so the work process will become complicated. For this reason, there has been a demand for evaluating the state of the ground surface of a wafer with a simple configuration without using a dedicated roughness measuring device.

本發明是有鑒於上述而作成的發明,其目的在於提供一種可以利用簡單的構成來評價晶圓的磨削面的狀態之晶圓的評價裝置、以及晶圓的評價方法。 The present invention was made in view of the above, and an object of the present invention is to provide a wafer evaluation device and a wafer evaluation method capable of evaluating the state of a ground surface of a wafer with a simple configuration.

為了解決上述之課題並達成目的,本發明之晶圓的評價裝置具備:保持組件,保持晶圓;磨削組件,磨削該晶圓;測定針,接觸以該磨削組件磨削後之晶圓的 磨削面;移動組件,可移動地保持該測定針;及儲存組件,在已使該測定針接觸於該磨削面的狀態下,將使該測定針與該磨削面相對地移動時產生之聲音作為磨削面之粗糙度資訊來儲存。 In order to solve the above-mentioned problems and achieve the purpose, the wafer evaluation device of the present invention includes: a holding unit for holding the wafer; a grinding unit for grinding the wafer; and a measuring needle for contacting the wafer ground by the grinding unit. round a grinding surface; a moving unit for movably holding the measuring needle; and a storage unit for causing the measuring needle to move relative to the grinding surface in a state in which the measuring needle is brought into contact with the grinding surface. The sound is stored as the roughness information of the grinding surface.

根據此構成,因為具有將使測定針與磨削面相對地移動時所產生的聲音作為磨削面之粗糙度資訊來儲存的儲存組件,所以可以藉由所儲存的各磨削面之粗糙度資訊的變化,而以簡單的構成來評價磨削面的狀態。 According to this configuration, since there is a storage unit that stores the sound generated when the measuring needle and the grinding surface are moved relatively as the roughness information of the grinding surface, it is possible to use the stored roughness of each grinding surface Evaluate the state of the grinding surface with a simple structure based on changes in information.

又,本發明是一種評價晶圓的磨削面的狀態之晶圓的評價方法,並具備:磨削步驟,磨削晶圓;移動步驟,在已使測定針接觸於晶圓的磨削面的狀態下使該測定針與該晶圓相對移動;儲存步驟,將於該移動步驟實施中所產生的聲音作為磨削面之粗糙度資訊來儲存。 Also, the present invention is a wafer evaluation method for evaluating the state of the grinding surface of the wafer, and includes: a grinding step of grinding the wafer; a moving step of making the measuring needle contact the grinding surface of the wafer The measurement needle and the wafer are moved relative to each other under the condition of the moving step; the storing step is to store the sound generated during the moving step as the roughness information of the grinding surface.

根據此構成,因為具有將使測定針與磨削面相對地移動時所產生之聲音作為磨削面之粗糙度資訊來儲存的儲存步驟,所以可以藉由所儲存的各磨削面之粗糙度資訊的變化,而以簡單的構成來評價磨削面的狀態。 According to this configuration, since there is a storage step of storing the sound generated when the measuring needle and the grinding surface are moved relatively as the roughness information of the grinding surface, it is possible to use the stored roughness of each grinding surface Evaluate the state of the grinding surface with a simple structure based on changes in information.

在此構成中,是以藉由加工裝置在任意的加工條件下連續被磨削之複數個晶圓為對象,來實施該移動步驟及該儲存步驟,且亦可更具備監視步驟,前述監視步驟是從複數個該粗糙度資訊的變化來監視晶圓的磨削面的狀態。根據此構成,因為是分別儲存連續磨削後之各晶圓的磨削面之粗糙度資訊,且可以從所儲存的各磨削面之粗糙度資訊的變化來容易地確認磨削面之狀態的變化,所以 可以監視加工裝置的異常或晶圓的異常。 In this configuration, the moving step and the storing step are performed on a plurality of wafers that are continuously ground under arbitrary processing conditions by the processing device, and the monitoring step may be further provided. The aforementioned monitoring step The state of the grinding surface of the wafer is monitored from changes in the plural pieces of roughness information. According to this configuration, since the roughness information of the grinding surface of each wafer after continuous grinding is stored separately, the state of the grinding surface can be easily confirmed from the change of the stored roughness information of each grinding surface changes, so Abnormalities of processing equipment and abnormalities of wafers can be monitored.

根據本發明,因為是將使測定針與磨削面相對地移動時所產生的聲音作為磨削面之粗糙度資訊來儲存,所以可以藉由所儲存的各磨削面之粗糙度資訊的變化,而以簡單的構成來評價磨削面的狀態。 According to the present invention, since the sound generated when the measuring needle and the grinding surface are moved relatively is stored as the roughness information of the grinding surface, it is possible to use the change of the stored roughness information of each grinding surface , and evaluate the state of the ground surface with a simple structure.

1:評價裝置 1: Evaluation device

2:裝置殼體 2: Device housing

4:垂直支撐板 4: Vertical support plate

6、8:引導軌道 6, 8: Guide track

10:粗磨削單元 10: Rough grinding unit

12:精磨削單元 12: Fine grinding unit

14、32:單元殼體 14, 32: Unit housing

16、34:輪座 16, 34: wheel seat

18、36:磨削輪 18, 36: Grinding wheel

18a、36a:磨石基台 18a, 36a: millstone abutment

18b、36b:磨削磨石 18b, 36b: grinding stone

20、38:電動馬達 20, 38: electric motor

22、40:移動基台 22, 40: mobile base station

24、42:被引導軌道 24, 42: guided track

26、44:磨削進給機構 26, 44: Grinding feed mechanism

28、46:滾珠螺桿 28, 46: ball screw

30、48:脈衝馬達 30, 48: Pulse motor

50:旋盤 50: turntable

51、53、101、215:箭頭 51, 53, 101, 215: Arrows

52:工作夾台 52: Work clamping table

54:基台 54: Abutment

56:吸附夾頭 56: Adsorption chuck

58:第1片匣 58: The first cassette

60:第2片匣 60: The second cassette

62:暫置工作台 62: Temporary workbench

68:狀態評價單元 68: Status evaluation unit

70:晶圓搬送組件 70:Wafer Handling Assembly

72:保持支臂 72: Holding Arm

74:多節連桿機構 74: Multi-section linkage mechanism

76:晶圓搬入組件 76:Wafer loading module

78:晶圓搬出組件 78:Wafer unloading module

80:罩殼體 80: Cover body

80A:開關門 80A: Open and close the door

90:控制裝置 90: Control device

91:運算處理部 91: Computational Processing Department

92:音聲波形取得部 92: Acquisition of sound waveform

93:儲存部(儲存組件) 93: storage unit (storage component)

94:評價部 94: Evaluation Department

95:麥克風 95: Microphone

100:旋轉工作台(保持組件) 100: Rotary table (holding components)

100A:軸心 100A: axis

110:偵測組件 110: Detection component

111:本體 111: Ontology

112:桿件 112: Rod

112A:前端部 112A: front end

113:測定針 113: Measuring needle

120:移動組件 120: Mobile components

121:保持架座 121: cage seat

122:載台 122: carrier

125:洗淨水噴嘴 125: washing water nozzle

200:晶圓 200: Wafer

201:背面(磨削面) 201: back (grinding surface)

202:正面 202: front

203:分割預定線 203: Divide scheduled line

204:元件 204: components

205:保護膠帶 205: Protective Tape

210、211、212、213、216、217、218:軌跡(移動軌跡) 210, 211, 212, 213, 216, 217, 218: track (moving track)

214:傷痕 214: scars

A:晶圓搬入搬出區域 A: Wafer loading and unloading area

B:粗磨削加工區域 B: Rough grinding area

C:精磨削加工區域 C: Fine grinding processing area

df:差分 df: difference

DA1:第1片晶圓的粗糙度資訊 DA 1 : roughness information of the first wafer

DA2:第2片晶圓的粗糙度資訊 DA 2 : roughness information of the 2nd wafer

DAn:第n片晶圓的粗糙度資訊 DA n : Roughness information of the nth wafer

DA11、DA12、DA13:粗糙度資訊 DA 11 , DA 12 , DA 13 : roughness information

圖1是本實施形態之晶圓的評價裝置之評價對象即晶圓的立體圖。 FIG. 1 is a perspective view of a wafer as an evaluation object of the wafer evaluation apparatus of the present embodiment.

圖2是本實施形態之評價裝置的構成例的立體圖。 Fig. 2 is a perspective view of a configuration example of an evaluation device according to the present embodiment.

圖3是顯示狀態評價單元之內部構成的立體圖。 Fig. 3 is a perspective view showing an internal configuration of a state evaluation unit.

圖4是狀態評價單元的功能構成圖。 FIG. 4 is a functional configuration diagram of a state evaluation unit.

圖5是顯示本實施形態之晶圓的評價方法的順序的流程圖。 FIG. 5 is a flowchart showing the procedure of the wafer evaluation method according to the present embodiment.

圖6是顯示移動步驟中的測定針的移動軌跡之一例的平面圖。 Fig. 6 is a plan view showing an example of the movement locus of the measuring needle in the moving step.

圖7是將藉由圖6的移動軌跡所取得的複數片晶圓的粗糙度資訊排列來顯示的圖表。 FIG. 7 is a graph displaying the roughness information of a plurality of wafers acquired through the movement traces of FIG. 6 .

圖8是顯示移動步驟中的測定針的移動軌跡之另一例的平面圖。 Fig. 8 is a plan view showing another example of the moving track of the measuring needle in the moving step.

圖9是將藉由圖8之移動軌跡所取得的1片晶圓之複數個粗糙度資訊排列來顯示的圖表。 FIG. 9 is a graph showing arranging and displaying a plurality of pieces of roughness information of one wafer acquired through the movement trace in FIG. 8 .

圖10是顯示移動步驟中的測定針的移動軌跡的另一例的平面圖。 Fig. 10 is a plan view showing another example of the movement track of the measuring needle in the moving step.

用以實施發明之形態 form for carrying out the invention

針對用於實施本發明之形態(實施形態),參照圖式並且詳細地進行說明。本發明並非因以下的實施形態所記載之內容而受到限定之發明。又,在以下所記載之構成要件中,包含所屬技術領域中具有通常知識者可輕易設想得到的或實質上是相同的構成要件。此外,以下所記載之構成是可適當組合的。又,在不脫離本發明之要旨的範圍內,可進行各種構成之省略、置換或變更。 The mode (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the constituent elements described below include those that can be easily imagined by those skilled in the art or those that are substantially the same. In addition, the configurations described below can be appropriately combined. In addition, omissions, substitutions, or changes of various configurations can be made without departing from the gist of the present invention.

關於本實施形態,將依據圖式來進行說明。圖1是本實施形態之晶圓的評價裝置之評價對象即晶圓的立體圖。圖2是本實施形態之評價裝置的構成例的立體圖。本實施形態之晶圓的評價裝置是磨削圖1所示之晶圓200的背面201,並且評價磨削後之背面(磨削面)201的磨削狀態(粗糙度)的裝置。晶圓200是例如,以矽為母材之圓板狀的半導體晶圓、或以藍寶石、SiC(碳化矽)等為母材之光元件晶圓。晶圓200是如圖1所示,在被形成於正面202之格子狀的分割預定線203所區劃出的複數個區域中形成有元件204。如圖2所示,晶圓200是在正面202貼附有保護膠帶205的狀態下,藉由評價裝置1來對背面201施行磨削。保護膠帶205是形成為與晶圓200相同大小的圓板狀,並且是以具有可撓性之合成樹脂來構成。 About this embodiment, it demonstrates based on drawing. FIG. 1 is a perspective view of a wafer as an evaluation object of the wafer evaluation apparatus of the present embodiment. Fig. 2 is a perspective view of a configuration example of an evaluation device according to the present embodiment. The wafer evaluation apparatus of this embodiment is an apparatus that grinds the back surface 201 of the wafer 200 shown in FIG. 1 and evaluates the grinding state (roughness) of the ground back surface (ground surface) 201 after grinding. The wafer 200 is, for example, a disc-shaped semiconductor wafer with silicon as a base material, or an optical element wafer with sapphire, SiC (silicon carbide) or the like as a base material. As shown in FIG. 1 , the wafer 200 has elements 204 formed in a plurality of regions defined by grid-like dividing lines 203 formed on the front surface 202 . As shown in FIG. 2 , the back side 201 of the wafer 200 is ground by the evaluation apparatus 1 in a state where the protective tape 205 is attached to the front side 202 . The protective tape 205 is formed in a disk shape having the same size as the wafer 200, and is made of a flexible synthetic resin.

評價裝置(加工裝置)1具備大致直方體形狀之裝置殼體2,於此裝置殼體2之一端側設置有垂直支撐板 4。於垂直支撐板4的內側面設置有在上下方向上延伸的2對引導軌道6及8。於其中一邊的引導軌道6上是將粗磨削單元10以可在上下方向上移動的方式裝設,並於另一邊的引導軌道8上將精磨削單元(磨削組件)12以可在上下方向上移動的方式裝設。 The evaluation device (processing device) 1 has a substantially cuboid-shaped device case 2, and a vertical support plate is provided on one end side of the device case 2 4. Two pairs of guide rails 6 and 8 extending in the vertical direction are provided on the inner surface of the vertical support plate 4 . On the guide track 6 on one side, the rough grinding unit 10 is installed in a manner that can move up and down, and on the guide track 8 on the other side, the fine grinding unit (grinding assembly) 12 can be placed on the Installed in a way to move up and down.

粗磨削單元10是由單元殼體14、磨削輪18、電動馬達20及移動基台22所構成,前述磨削輪18是裝設於輪座16,且前述輪座16是旋轉自如地裝設於前述單元殼體14的下端,前述電動馬達20是使裝設於單元殼體14的下端的輪座16朝逆時針方向旋轉,前述移動基台22裝設有單元殼體14。 The rough grinding unit 10 is composed of a unit housing 14, a grinding wheel 18, an electric motor 20, and a mobile base 22. The aforementioned grinding wheel 18 is installed on the wheel base 16, and the aforementioned wheel base 16 is rotatable. Installed at the lower end of the aforementioned unit case 14 , the aforementioned electric motor 20 rotates the wheel seat 16 installed at the lower end of the unit case 14 in a counterclockwise direction, and the aforementioned mobile base 22 is equipped with the unit case 14 .

磨削輪18是由環狀的磨石基台18a、及裝設於磨石基台18a的下表面的粗磨削用的磨削磨石18b所構成。於移動基台22上形成有一對被引導軌道24,可藉由將這些被引導軌道24可移動地嵌合於已設置在垂直支撐板4的引導軌道6,而將粗磨削單元10以可在上下方向上移動的方式支撐。 The grinding wheel 18 is constituted by an annular grindstone base 18a and a grinding grindstone 18b for rough grinding attached to the lower surface of the grindstone base 18a. A pair of guided rails 24 are formed on the mobile base 22. By fitting these guided rails 24 movably to the guide rails 6 provided on the vertical support plate 4, the rough grinding unit 10 can be Supported in a way that moves up and down.

於引導軌道6上設置有使粗磨削單元10之移動基台22沿著該引導軌道6移動,而將磨削輪18磨削進給的磨削進給機構26。磨削進給機構26是由滾珠螺桿28、脈衝馬達30及圖未示的螺帽所構成,前述滾珠螺桿28是與引導軌道6朝上下方向平行地配置於垂直支撐板4且可旋轉地被支撐,前述脈衝馬達30是旋轉驅動滾珠螺桿28,前述螺帽是裝設於移動基台22且螺合於滾珠螺桿28。藉由以脈 衝馬達30來正轉或逆轉驅動滾珠螺桿28,以使粗磨削單元10在上下方向上移動。 The grinding feed mechanism 26 which moves the movable base 22 of the rough grinding unit 10 along this guide rail 6, and grinds and feeds the grinding wheel 18 is provided on the guide rail 6. As shown in FIG. The grinding feed mechanism 26 is composed of a ball screw 28, a pulse motor 30, and a nut not shown in the figure. The ball screw 28 is arranged on the vertical support plate 4 in parallel with the guide rail 6 in the vertical direction and is rotatably supported. For support, the aforementioned pulse motor 30 rotates and drives the ball screw 28 , and the aforementioned nut is mounted on the mobile base 22 and screwed to the ball screw 28 . by pulse The motor 30 is used to drive the ball screw 28 forward or reverse to move the rough grinding unit 10 in the up and down direction.

精磨削單元12是與粗磨削單元10同樣地構成,且是由單元殼體32、磨削輪36、電動馬達38及移動基台40所構成,前述磨削輪36是裝設於輪座34,且前述輪座34是旋轉自如地裝設於單元殼體32的下端,前述電動馬達38是使裝設於單元殼體32的上端的輪座34朝逆時針方向驅動,前述移動基台40裝設有單元殼體32。磨削輪36是由環狀之磨石基台36a、及裝設於磨石基台36a之下表面的精磨削用的磨削磨石36b所構成。 The fine grinding unit 12 is constituted in the same way as the rough grinding unit 10, and is composed of a unit housing 32, a grinding wheel 36, an electric motor 38, and a moving base 40. The aforementioned grinding wheel 36 is mounted on the wheel. seat 34, and the aforementioned wheel seat 34 is rotatably installed on the lower end of the unit case 32, the aforementioned electric motor 38 drives the wheel seat 34 installed on the upper end of the unit case 32 in the counterclockwise direction, and the aforementioned mobile base The table 40 is equipped with the unit case 32 . The grinding wheel 36 is composed of a ring-shaped grindstone base 36a and a grinding grindstone 36b for fine grinding installed on the lower surface of the grindstone base 36a.

於移動基台40上形成有一對被引導軌道42,藉由將這些被引導軌道42可移動地嵌合於已設置在垂直支撐板4的引導軌道8,而將精磨削單元12以可在上下方向上移動的方式支撐。 A pair of guided rails 42 are formed on the mobile base 40. By movably fitting these guided rails 42 to the guide rails 8 provided on the vertical support plate 4, the fine grinding unit 12 can be moved It is supported by moving up and down.

於引導軌道8上設置有使精磨削單元12之移動基台40沿著該引導軌道8移動,而將磨削輪36磨削進給的磨削進給機構44。磨削進給機構44是由滾珠螺桿46、脈衝馬達48及圖未示的螺帽所構成,前述滾珠螺桿46是與引導軌道8朝上下方向平行地配置於垂直支撐板4且旋轉地被支撐,前述脈衝馬達30是旋轉驅動滾珠螺桿46,前述螺帽是裝設於移動基台40且螺合於滾珠螺桿46。藉由以脈衝馬達48來正轉或逆轉驅動滾珠螺桿46,以使精磨削單元12在上下方向上移動。 A grinding feed mechanism 44 for grinding and feeding the grinding wheel 36 is provided on the guide rail 8 by moving the movable base 40 of the finish grinding unit 12 along the guide rail 8 . The grinding feed mechanism 44 is composed of a ball screw 46, a pulse motor 48, and a nut not shown in the figure. The ball screw 46 is arranged on the vertical support plate 4 parallel to the guide rail 8 in the vertical direction and is rotatably supported. , the aforementioned pulse motor 30 rotates and drives the ball screw 46 , and the aforementioned nut is mounted on the moving base 40 and screwed to the ball screw 46 . The fine grinding unit 12 is moved up and down by driving the ball screw 46 forwardly or reversely by the pulse motor 48 .

評價裝置1具備相鄰於垂直支撐板4而配置 於裝置殼體2的上表面的旋盤50。旋盤50是形成為較大的直徑的圓盤狀,並藉由圖未示之旋轉驅動機構而朝箭頭51所示的方向旋轉。於旋盤50上是將3個工作夾台52互相在圓周方向上隔開120度並在水平面內可旋轉地配置。工作夾台52是由圓盤狀之基台54及藉由多孔陶瓷材而形成為圓盤狀的吸附夾頭56所構成,並藉由使圖未示之吸引組件作動來對已載置於吸附夾頭56之保持面上的晶圓進行吸引保持。 The evaluation device 1 is provided adjacent to the vertical support plate 4 and arranged The turntable 50 on the upper surface of the device housing 2. The turntable 50 is formed in a disc shape with a large diameter, and is rotated in the direction indicated by an arrow 51 by a rotation drive mechanism not shown in the figure. On the turntable 50, three work chucks 52 are arranged rotatably in a horizontal plane at a distance of 120 degrees from each other in the circumferential direction. The work holder 52 is composed of a disc-shaped base 54 and a disc-shaped adsorption chuck 56 formed of a porous ceramic material, and the suction unit that is not shown in the figure is actuated to hold the placed on the The wafer on the holding surface of the suction chuck 56 is sucked and held.

工作夾台52是藉由圖未示之旋轉驅動機構而在以箭頭53所示的方向上旋轉。配設於旋盤50之3個工作夾台52,是藉由旋盤50適當旋轉,而依晶圓搬入搬出區域A、粗磨削加工區域B、精磨削加工區域C、及晶圓搬入搬出區域A來依序進行移動。 The work holder 52 is rotated in the direction indicated by the arrow 53 by a rotation drive mechanism not shown in the figure. The three work clamps 52 arranged on the turntable 50 are properly rotated by the turntable 50 to move in and out of the wafer area A, the rough grinding area B, the fine grinding area C, and the wafer in and out area. A to move in sequence.

評價裝置1具備有:相對於晶圓搬入搬出區域A配置於一邊側,並用以貯藏正面202貼附有保護膠帶205之磨削加工前之晶圓200的第1片匣58、及相對於晶圓搬入搬出區域A配置於另一邊側,並用以貯藏背面(磨削面)201磨削加工後的晶圓200的第2片匣60。 The evaluation device 1 is provided with: a first cassette 58 arranged on one side of the wafer loading and unloading area A for storing the wafer 200 before grinding with a protective tape 205 attached to the front surface 202; The round loading and unloading area A is arranged on the other side, and is used for storing the second cassette 60 of the wafer 200 after the backside (grinding surface) 201 has been ground.

第1片匣58與晶圓搬入搬出區域A之間配設有載置從第1片匣58搬出之晶圓200的暫置工作台62。晶圓搬入搬出區域A與第2片匣60之間設置有評價磨削加工後之晶圓200的背面201的狀態的狀態評價單元68。 Between the first cassette 58 and the wafer loading and unloading area A, a temporary table 62 on which the wafer 200 unloaded from the first cassette 58 is placed is arranged. A state evaluation unit 68 for evaluating the state of the back surface 201 of the wafer 200 after grinding is provided between the wafer loading/unloading area A and the second cassette 60 .

晶圓搬送組件70是由保持支臂72、及移動保持支臂72的多節連桿機構74所構成,且可將收納於第1片 匣58內之晶圓200搬出至暫置工作台62,並且將以狀態評價單元68測定後之晶圓200搬送至第2片匣60。 The wafer transfer assembly 70 is composed of a holding arm 72 and a multi-joint link mechanism 74 that moves the holding arm 72, and can be accommodated in the first sheet The wafer 200 in the cassette 58 is carried out to the temporary stage 62 , and the wafer 200 measured by the state evaluation unit 68 is carried to the second cassette 60 .

晶圓搬入組件76會將載置於暫置工作台62上之磨削加工前的晶圓200搬送至已定位於晶圓搬入搬出區域A的工作夾台52上。晶圓搬出組件78會將已定位於晶圓搬入搬出區域A之工作夾台52上所載置之磨削加工後的晶圓200搬送至狀態評價單元68。又,評價裝置1具備有控制各構成要件之動作的控制裝置90。控制裝置90是分別控制評價裝置1之上述的構成要件,亦即:粗磨削單元10、精磨削單元12、配置於旋盤50的3個工作夾台52、晶圓搬送組件70、晶圓搬入組件76、晶圓搬出組件78、及狀態評價單元68等,並使評價裝置1實施晶圓200之磨削加工及所磨削的背面201的評價。 The wafer loading unit 76 transports the pre-grinding wafer 200 placed on the temporary table 62 to the work chuck 52 positioned in the wafer loading and unloading area A. The wafer unloading unit 78 transports the ground wafer 200 placed on the chuck table 52 positioned in the wafer loading and unloading area A to the state evaluation unit 68 . Furthermore, the evaluation device 1 is provided with a control device 90 for controlling the operation of each component. The control device 90 controls the above-mentioned components of the evaluation device 1, namely: the rough grinding unit 10, the fine grinding unit 12, the three work clamps 52 arranged on the turntable 50, the wafer transfer unit 70, and the wafer transfer unit 70. The load-in module 76, the wafer unload module 78, the state evaluation unit 68, and the like make the evaluation device 1 perform grinding of the wafer 200 and evaluation of the ground back surface 201.

接著,說明狀態評價單元68。圖3是顯示狀態評價單元之內部構成的立體圖。圖4是狀態評價單元的功能構成圖。如圖2所示,狀態評價單元68具備包覆外側的罩殼體80,並於此罩殼體80設置有搬入或搬出用的開關門80A。此罩殼體80是以具有隔音性之素材所形成,而將在罩殼體80內的罩殼體80外之噪音的影響減低。 Next, the state evaluation unit 68 will be described. Fig. 3 is a perspective view showing an internal configuration of a state evaluation unit. FIG. 4 is a functional configuration diagram of a state evaluation unit. As shown in FIG. 2 , the state evaluation unit 68 includes a cover body 80 covering the outside, and a switch door 80A for carrying in or carrying out is provided on the cover body 80 . The cover body 80 is formed of a sound-insulating material to reduce the influence of noise inside the cover body 80 and outside the cover body 80 .

狀態評價單元68具備:在罩殼體80(圖2)內如圖3所示地保持磨削加工後之晶圓200的旋轉工作台(保持組件)100、接觸於已保持於此旋轉工作台100之晶圓200的背面(磨削面)201以偵測該背面201之狀態(粗糙度)的偵測組件110、及可移動地保持此偵測組件110的移動組件 120。旋轉工作台100具備形成為圓板狀並在正面(上表面)之中央部由多孔陶瓷等所形成的吸附夾頭,並將此吸附夾頭連通於圖未示之吸引組件。藉此,旋轉工作台100是藉由對已載置於吸附夾頭之晶圓200進行吸引來保持該晶圓200。又,旋轉工作台100是以垂直於上述之正面(上表面)的軸心100A(圖4)為中心而朝箭頭101方向旋轉自如地構成。 The state evaluation unit 68 includes: a rotary table (holding unit) 100 holding the ground wafer 200 as shown in FIG. The back side (grinding surface) 201 of the wafer 200 of 100 is used to detect the detection unit 110 of the state (roughness) of the back side 201, and the moving unit movably holding the detection unit 110 120. The rotary table 100 is provided with a disk-shaped suction chuck formed of porous ceramics at the center of the front (upper surface), and the suction chuck is connected to a suction unit not shown in the figure. Thereby, the rotary table 100 holds the wafer 200 by attracting the wafer 200 placed on the suction chuck. Further, the rotary table 100 is configured to be rotatable in the direction of the arrow 101 around an axis 100A ( FIG. 4 ) perpendicular to the above-mentioned front (upper surface).

偵測組件110具備:從本體111大致水平地延伸之桿件112、及設置於該桿件112的前端部112A,且由此前端部112A朝鉛直下方延伸之測定針113。桿件112是以收容於本體111內的基端部為中心而以可上下搖動的方式構成。因此,桿件112會因應於與測定針113接觸之晶圓200的背面(磨削面)201的形狀而上下搖動。測定針113是在已與晶圓200之背面201接觸的狀態下,藉由使偵測組件110與旋轉工作台100相對地移動而產生聲音。測定針113是使用例如鑽石或藍寶石等材質,且將針尖之前端半徑形成為例如10[μm]以下。又,針尖宜形成為球狀及圓錐狀。在本實施形態中,是藉由例如使旋轉工作台100旋轉,而在測定針113於晶圓200的背面201上相對地移動時產生聲音。並且,因應於每個晶圓200產生之聲音的相對的變化、或差分來評價晶圓200的背面201的狀態(粗糙度)。 The detection unit 110 includes a rod 112 extending substantially horizontally from the main body 111 , and a measurement needle 113 provided on a front end 112A of the rod 112 and extending vertically downward from the front end 112A. The lever 112 is configured to be swingable up and down centering on the base end part accommodated in the main body 111 . Therefore, the rod 112 swings up and down according to the shape of the back surface (grinding surface) 201 of the wafer 200 that is in contact with the measurement needle 113 . The measurement needle 113 generates a sound by moving the detection unit 110 and the rotary table 100 relative to each other in a state of being in contact with the back surface 201 of the wafer 200 . The measuring needle 113 is made of a material such as diamond or sapphire, and has a tip radius of, for example, 10 [μm] or less. Also, the needle tip is preferably formed into a spherical shape or a conical shape. In the present embodiment, for example, by rotating the rotary table 100 , a sound is generated when the measuring pin 113 relatively moves on the back surface 201 of the wafer 200 . And, the state (roughness) of the back surface 201 of the wafer 200 is evaluated in accordance with the relative change or difference of the sound generated by each wafer 200 .

移動組件120是配置於旋轉工作台100的周圍,且保持偵測組件110並且將此偵測組件110的測定針113移動至旋轉工作台100上的接觸位置、及自旋轉工作台 100退避之退避位置。移動組件120具備:豎立設置於裝置殼體2的上表面之圓柱狀的保持架座121、及由此保持架座121之側緣在水平方向上一體形成的載台122,且可在此載台122上保持偵測組件110的本體111。保持架座121藉由以圓柱之軸心為中心轉動,偵測組件110即會移動至旋轉工作台100上的接觸位置、及自旋轉工作台100退避之退避位置。又,在本構成中,測定針113可以藉由旋動保持架座121,而定位到保持於旋轉工作台100之晶圓200的中心側與外緣之間。因此,即便藉由旋動移動組件120的保持架座121,仍然能夠使偵測組件110與旋轉工作台100相對地移動。 The moving assembly 120 is arranged around the rotary table 100, and holds the detection assembly 110 and moves the detection needle 113 of the detection assembly 110 to the contact position on the rotary table 100, and from the rotary table 100 retreat position. The moving assembly 120 is equipped with: a cylindrical holder seat 121 erected on the upper surface of the device housing 2, and a platform 122 integrally formed on the side edge of the holder seat 121 in the horizontal direction, and can be loaded here. The body 111 of the detection component 110 is held on the stage 122 . When the holder seat 121 rotates around the axis of the cylinder, the detection unit 110 will move to the contact position on the rotary table 100 and the withdrawn position from the rotary table 100 . In addition, in this configuration, the measurement needle 113 can be positioned between the center side and the outer edge of the wafer 200 held on the rotary table 100 by rotating the holder base 121 . Therefore, even by rotating the holder seat 121 of the moving component 120 , the detection component 110 and the rotary table 100 can still be moved relatively.

又,在本實施形態中,在旋轉工作台100的周圍具備對搬送至旋轉工作台100之磨削加工後的晶圓200供給洗淨水的洗淨水噴嘴125。洗淨水噴嘴125是以可在噴嘴開口位於旋轉工作台100的中央上方的作動位置、及從旋轉工作台100退避的退避位置移動自如的方式構成。並且,洗淨水噴嘴125是連接於將圖示省略之洗淨水(例如純水)供給源。藉此,搬送至旋轉工作台100之磨削加工後的晶圓200,可藉由所供給之洗淨水將背面201洗淨。因此,在本實施形態中,可以在已將晶圓200之背面201洗淨的狀態下,進行該背面201的狀態(粗糙度)的測定。 In addition, in the present embodiment, a cleaning water nozzle 125 for supplying cleaning water to the wafer 200 transferred to the rotary table 100 after grinding is provided around the rotary table 100 . The washing water nozzle 125 is configured to be movable between an operating position where the nozzle opening is above the center of the rotary table 100 and a retracted position retracted from the rotary table 100 . Furthermore, the washing water nozzle 125 is connected to a washing water (for example, pure water) supply source which is not shown in the figure. Thereby, the back surface 201 of the ground wafer 200 transferred to the rotary table 100 can be cleaned by the supplied cleaning water. Therefore, in this embodiment, the measurement of the state (roughness) of the back surface 201 of the wafer 200 can be performed in a state in which the back surface 201 has been cleaned.

如圖4所示,控制裝置90具備運算處理部91、音聲波形取得部92、儲存部(儲存組件)93、評價部94、及未圖示之輸出入介面裝置。運算處理部91具有如 CPU(central processing unit)的微處理器(microprocessor),且執行儲存於ROM之電腦程式,以生成用於控制評價裝置1的控制訊號,且所生成之控制訊號會透過輸出入介面裝置而輸出到評價裝置1的各構成要件。於音聲波形取得部92連接有具有集音功能的麥克風95。音聲波形取得部92是藉由使測定針113對晶圓200相對地移動來將所產生的音聲(聲音)通過麥克風95收集,而取得此音聲的波形。在本實施形態中,雖然音聲波形取得部92是設成通過麥克風95來取得所產生之音聲(聲音)的波形的構成,但並不限定於此,亦可例如取得使測定針113對晶圓200相對地移動時所產生之測定針113的振動來作為所產生之音聲(聲音)的波形。 As shown in FIG. 4 , the control device 90 includes an arithmetic processing unit 91 , a sound waveform acquisition unit 92 , a storage unit (storage unit) 93 , an evaluation unit 94 , and an input/output interface device not shown. The arithmetic processing unit 91 has such The microprocessor (microprocessor) of the CPU (central processing unit), and executes the computer program stored in the ROM to generate a control signal for controlling the evaluation device 1, and the generated control signal will be output to the I/O interface device Each component of the evaluation device 1 is described. A microphone 95 having a sound collecting function is connected to the sound waveform acquisition unit 92 . The sound waveform acquisition unit 92 collects the generated sound (sound) by moving the measurement needle 113 relative to the wafer 200 through the microphone 95 to obtain the sound waveform. In the present embodiment, although the sound waveform acquisition unit 92 is configured to obtain the waveform of the generated sound (sound) through the microphone 95, it is not limited thereto. The vibration of the measurement needle 113 generated when the wafer 200 moves relatively is used as the waveform of the generated sound (sound).

儲存部93是將音聲波形取得部92所取得之音聲波形資訊作為已磨削之背面201的粗糙度資訊來儲存。此粗糙度資訊是與接觸於晶圓200之背面201來移動之測定針113的軌跡(移動軌跡)建立對應而儲存。對於1片晶圓200,可藉由使測定針113沿著一個或複數個軌跡移動,而儲存一個或複數個粗糙度資訊。 The storage unit 93 stores the sound waveform information acquired by the sound waveform acquisition unit 92 as the roughness information of the ground back surface 201 . This roughness information is stored in association with the track (trajectory of movement) of the measurement pin 113 that moves in contact with the back surface 201 of the wafer 200 . For one wafer 200, one or a plurality of pieces of roughness information can be stored by moving the measurement needle 113 along one or a plurality of trajectories.

評價部94是藉由將已儲存於儲存部93之一個晶圓200的音聲波形資訊(粗糙度資訊)與其他之晶圓200的音聲波形資訊(粗糙度資訊)進行比較,來評價一個晶圓200的背面201的狀態。例如,對已連續地磨削之晶圓200,儲存各晶圓200的音聲波形資訊,並監視這些所儲存的各晶圓200的音聲波形資訊(粗糙度資訊)的變化。然後, 評價部94會在各晶圓200之音聲波形資訊(粗糙度資訊)的變化的差分(例如最大值)已超出閾值而變大時,評價為背面201的磨削狀態已變化(惡化)。此時,各晶圓200之音聲波形資訊(粗糙度資訊),皆為測定針113在背面201之事先決定的軌跡上移動時所產生之由音聲所形成的資訊。又,例如,亦可針對已正常地磨削之晶圓200先設定基準音聲波形資訊(基準粗糙度資訊),再藉由監視所儲存之一個晶圓200的音聲波形資訊與基準音聲波形資訊的差分,來評價背面201之磨削狀態的良窳。 The evaluation unit 94 evaluates a wafer 200 by comparing the sound waveform information (roughness information) of one wafer 200 stored in the storage unit 93 with the sound waveform information (roughness information) of other wafers 200 . The state of the backside 201 of the wafer 200 . For example, for wafers 200 that have been continuously ground, the sound waveform information of each wafer 200 is stored, and changes in the stored sound waveform information (roughness information) of each wafer 200 are monitored. Then, The evaluation unit 94 evaluates that the grinding state of the back surface 201 has changed (deteriorated) when the difference (for example, the maximum value) of the change in the sound waveform information (roughness information) of each wafer 200 exceeds a threshold value and becomes larger. At this time, the sound waveform information (roughness information) of each wafer 200 is information formed by sound generated when the measuring needle 113 moves on the predetermined trajectory of the back surface 201 . Also, for example, the reference sound waveform information (reference roughness information) can be set for a normally ground wafer 200 first, and then the stored sound waveform information and reference sound of a wafer 200 can be monitored. The difference of the waveform information is used to evaluate the quality of the grinding state of the back surface 201 .

接著,說明晶圓的背面(磨削面)201的評價方法。圖5是顯示本實施形態之晶圓的評價方法的順序的流程圖。圖6是顯示移動步驟中的測定針的移動軌跡之一例的平面圖。圖7是將藉由圖6的移動軌跡所取得的複數片晶圓之粗糙度資訊排列來顯示的圖表。 Next, a method for evaluating the rear surface (ground surface) 201 of the wafer will be described. FIG. 5 is a flowchart showing the procedure of the wafer evaluation method according to the present embodiment. Fig. 6 is a plan view showing an example of the movement locus of the measuring needle in the moving step. FIG. 7 is a graph showing the arrangement of roughness information of a plurality of wafers acquired through the movement trace of FIG. 6 .

首先,將晶圓200保持於工作夾台52(步驟S1:保持步驟)。晶圓200是藉由晶圓搬入組件76而搬送至已定位於晶圓搬入搬出區域A的工作夾台52上,並保持於該工作夾台52。此時,晶圓200是在正面202側貼附保護膠帶205,並將背面201側朝向上方來保持於工作夾台52。 First, the wafer 200 is held on the chuck 52 (step S1: holding step). The wafer 200 is transferred to the work chuck 52 positioned in the wafer loading and unloading area A by the wafer loading and unloading unit 76 , and is held by the chucking table 52 . At this time, the wafer 200 is held on the work chuck 52 with the protective tape 205 attached to the front 202 side and the back 201 side facing upward.

接著,對保持於工作夾台52的晶圓200執行粗磨削(步驟S2:粗磨削步驟)。保持於工作夾台52的晶圓200是藉由將旋盤50旋轉120度,而移動至粗磨削加工區域B。在此粗磨削加工區域B中,是在使工作夾台52旋轉的狀態下,使粗磨削單元10之磨削輪18旋轉並且下降,而進 行使旋轉之磨削輪18的磨削磨石18b接觸於晶圓200的背面201來薄化至接近規定厚度的附近為止的粗磨削。 Next, rough grinding is performed on the wafer 200 held by the chuck 52 (step S2: rough grinding step). The wafer 200 held on the chuck table 52 is moved to the rough grinding processing area B by rotating the turntable 50 by 120 degrees. In this rough grinding processing area B, the grinding wheel 18 of the rough grinding unit 10 is rotated and lowered while the work chuck 52 is rotated, and further Rough grinding is performed until the grinding stone 18b of the rotating grinding wheel 18 comes into contact with the back surface 201 of the wafer 200 to thin the wafer to a predetermined thickness.

當粗磨削步驟結束時,會對保持於工作夾台52之晶圓200執行精磨削(步驟S3:精磨削步驟)。此精磨削步驟相當於本發明中的磨削步驟。又,精磨削步驟亦可包含上述之粗磨削步驟來設成磨削步驟。粗磨削步驟結束後,藉由使旋盤50進一步地旋轉120度,保持已進行粗磨削之晶圓200的工作夾台52即移動至精磨削加工區域C。在此精磨削加工區域C中,是在使工作夾台52旋轉的狀態下,使精磨削單元12的磨削輪36旋轉並且下降,來進行使旋轉之磨削輪36的磨削磨石36b接觸於晶圓200的背面201而薄化至規定厚度為止的精磨削。在本構成中,是藉由使旋盤50旋轉,而將保持於各工作夾台52的晶圓200連續地磨削加工。 When the rough grinding step is finished, finish grinding is performed on the wafer 200 held on the work chuck 52 (step S3: finish grinding step). This finish grinding step corresponds to the grinding step in the present invention. In addition, the fine grinding step can also be set as a grinding step including the above-mentioned rough grinding step. After the rough grinding step is finished, the table 52 holding the wafer 200 that has undergone rough grinding is moved to the finish grinding processing area C by further rotating the turntable 50 by 120 degrees. In this finish grinding area C, the grinding wheel 36 of the finish grinding unit 12 is rotated and lowered while the work chuck 52 is rotated, and the grinding wheel 36 is ground and ground by rotating the grinding wheel 36 . Finish grinding in which the stone 36b contacts the back surface 201 of the wafer 200 and thins it to a predetermined thickness. In this configuration, the wafer 200 held by each chuck 52 is continuously ground by rotating the turntable 50 .

其次,對已進行精磨削之晶圓200的背面201進行洗淨(步驟S4:洗淨步驟)。具體而言,保持於工作夾台52的晶圓200,是藉由將旋盤50旋轉120度而再次移動至晶圓搬入搬出區域A。並且,已定位於晶圓搬入搬出區域A之磨削加工後的晶圓200,是藉由晶圓搬出組件78而搬送至狀態評價單元68。在狀態評價單元68中,是如圖3所示,將晶圓200以背面201向上的狀態吸引於旋轉工作台上來進行保持。然後,使旋轉工作台100朝箭頭101方向旋轉,並且將洗淨水噴嘴125的噴嘴開口定位於旋轉工作台100的中央上方,並由噴嘴開口供給洗淨水(例如純水)。藉 此,可將已搬送至旋轉工作台100之磨削加工後的晶圓200藉由所供給的洗淨水來將背面201側洗淨。因此,可以除去已附著於背面201的磨削屑。 Next, the back surface 201 of the wafer 200 that has undergone finish grinding is cleaned (step S4: cleaning step). Specifically, the wafer 200 held on the chuck table 52 is moved to the wafer loading and unloading area A again by rotating the turntable 50 by 120 degrees. In addition, the ground wafer 200 positioned in the wafer loading and unloading area A is transported to the state evaluation unit 68 by the wafer loading and unloading unit 78 . In the state evaluation unit 68 , as shown in FIG. 3 , the wafer 200 is sucked and held on the rotary table with the back surface 201 facing upward. Then, the rotary table 100 is rotated in the direction of the arrow 101, the nozzle opening of the washing water nozzle 125 is positioned above the center of the rotary table 100, and washing water (for example, pure water) is supplied from the nozzle opening. borrow In this way, the ground wafer 200 transferred to the rotary table 100 can be cleaned from the back surface 201 side by the supplied cleaning water. Therefore, grinding dust that has adhered to the back surface 201 can be removed.

接著,在已使測定針113接觸於晶圓200的背面201的狀態下,使測定針113與晶圓200相對移動(步驟S5:移動步驟)。具體而言,是如圖6所示,使移動組件120之保持架座121旋轉,而將測定針113定位於事先決定之晶圓200(旋轉工作台100)上的規定位置。然後,在已使測定針113接觸於晶圓200的背面201的狀態下,使旋轉工作台100朝箭頭101方向上旋轉。 Next, in a state where the measuring pins 113 are brought into contact with the back surface 201 of the wafer 200, the measuring pins 113 and the wafer 200 are relatively moved (step S5: moving step). Specifically, as shown in FIG. 6 , the holder base 121 of the moving unit 120 is rotated to position the measurement needle 113 at a predetermined position on the wafer 200 (rotary table 100 ) determined in advance. Then, the rotary table 100 is rotated in the direction of the arrow 101 in a state where the measuring needles 113 are brought into contact with the back surface 201 of the wafer 200 .

藉此,測定針113會沿著晶圓200的背面201上的規定的軌跡210而移動。此時,測定針113會因於晶圓200的背面201所施加之磨削痕跡的微細的凹凸而振動,並產生伴隨於此振動的聲音(音聲)。發明人反覆地實驗後,獲得了以下的知識見解:在旋轉工作台100的旋轉數為與音樂用電唱機相同的旋轉數(33[rpm]、45[rpm])、比音樂用電唱機的旋轉數更低的旋轉數(10[rpm])、及為旋轉工作台100空轉時的旋轉數(40[rpm])的情況下,任一情況都會使測定針113振動而產生聲音。因此,旋轉工作台100的旋轉數,宜設為至少包含音樂用電唱機的旋轉數的10[rpm]~45[rpm]左右。 Thereby, the measurement needle 113 moves along the predetermined trajectory 210 on the back surface 201 of the wafer 200 . At this time, the measurement needle 113 vibrates due to the fine unevenness of the grinding mark applied to the back surface 201 of the wafer 200 , and generates sound (sound) accompanying the vibration. After repeated experiments, the inventor obtained the following knowledge: the number of rotations of the rotary table 100 is the same as that of a record player for music (33 [rpm], 45 [rpm]), which is higher than the number of rotations of a record player for music. In the case of a lower rotation speed (10 [rpm]) or the rotation speed (40 [rpm]) when the rotary table 100 is idling, in either case, the measurement needle 113 vibrates and a sound is generated. Therefore, the rotation speed of the rotary table 100 is preferably about 10 [rpm] to 45 [rpm] including at least the rotation speed of the record player for music.

接著,將所產生的聲音作為晶圓200的背面(磨削面)201的粗糙度資訊並儲存於儲存部93(步驟S6:儲存步驟)。具體而言,音聲波形取得部92是通過麥克風95 來收集在測定針113與晶圓200的背面201之間所產生的聲音(音聲),而取得該音聲波形資訊。儲存部93是將音聲波形取得部92所取得之音聲波形資訊作為已磨削的背面201的粗糙度資訊來儲存。此粗糙度資訊是與例如接觸於晶圓200的背面201並移動之測定針113的軌跡210建立對應而儲存,且在本實施形態中,是針對連續地被加工的複數個晶圓200,來各自將1個粗糙度資訊(音聲波形資訊)與軌跡210建立對應來儲存。 Next, the generated sound is stored in the storage unit 93 as roughness information of the back surface (grinding surface) 201 of the wafer 200 (step S6: storage step). Specifically, the sound waveform acquisition unit 92 uses the microphone 95 The sound (sound) generated between the measuring needle 113 and the back surface 201 of the wafer 200 is collected to obtain the sound waveform information. The storage unit 93 stores the sound waveform information acquired by the sound waveform acquisition unit 92 as the roughness information of the ground back surface 201 . This roughness information is stored in association with, for example, the trajectory 210 of the measurement needle 113 that moves in contact with the back surface 201 of the wafer 200, and in this embodiment, it is for a plurality of wafers 200 that are processed continuously. Each piece of roughness information (sound waveform information) is stored in association with the locus 210 .

接著,從複數個粗糙度資訊的變化來監視晶圓200的背面201的狀態(步驟S7:監視步驟)。在本構成中,因為將複數個晶圓200的背面201連續地磨削加工,所以精磨削加工後的背面201的磨削狀態通常會成為大致均一。然而,在例如磨削加工時,磨削條件已改變成下述的情況的情況下,會使磨削後的背面201的磨削狀態大大地不同:工作夾台52上載置有保護膠帶205的膠帶屑或污染物等異物的情況、連續加工中的晶圓200中混入有種類(材質或表面加工的有無)不同的晶圓的情況、磨削了保護膠帶205側的情況、在晶圓200的背面201有傷痕的情況、或因磨削磨石的不良而產生磨削不良的情況等。因此,評價部94會從複數個粗糙度資訊之變化來監視晶圓200的背面201的狀態的變化的有無,並依據複數個粗糙度資訊的變化之差分(例如最大值)是否大於規定的閾值來評價背面201的狀態的良窳。 Next, the state of the back surface 201 of the wafer 200 is monitored from changes in the plurality of pieces of roughness information (step S7: monitoring step). In this configuration, since the back surfaces 201 of the plurality of wafers 200 are continuously ground, the grinding state of the back surfaces 201 after finish grinding is usually substantially uniform. However, for example, during grinding, if the grinding conditions have been changed to the following situation, the grinding state of the ground back surface 201 will be greatly different: In the case of foreign matter such as tape scraps or contaminants, in the case of a wafer of a different type (material or surface processing) mixed in the wafer 200 being continuously processed, in the case of grinding the side of the protective tape 205, in the case of the wafer 200 The case where the back surface 201 is scratched, or the case where the grinding defect occurs due to a defect of the grinding stone. Therefore, the evaluation unit 94 will monitor whether the state of the back surface 201 of the wafer 200 changes from the changes in the plurality of roughness information, and based on whether the difference (for example, the maximum value) of the changes in the plurality of roughness information is greater than a predetermined threshold value It is good to evaluate the state of the back 201.

具體而言,評價部94是如圖7所示,隨時從 儲存部93讀出第1片晶圓200的粗糙度資訊DA1、第2片晶圓200的粗糙度資訊DA2、…第n片晶圓200的粗糙度資訊DAn來作為已連續地被磨削加工之複數個晶圓200的背面201的粗糙度資訊。並且,評價部94會例如判定最近之晶圓200的粗糙度資訊(在圖7中是第n片晶圓200的粗糙度資訊DAn)之振幅(聲壓)的最大值、與其以前的最近的晶圓200的粗糙度資訊的振幅的最大值的差分df是否大於事先設定之規定的閾值。此時,只要差分df大於閾值,便會監視下一個(第n+1片)晶圓200的粗糙度資訊,且在差分df大於閾值的情況下,會評價為磨削不良,並例如通報該意旨。 Specifically, as shown in FIG. 7 , the evaluation unit 94 reads out the roughness information DA 1 of the first wafer 200 , the roughness information DA 2 of the second wafer 200 , ... the n-th The roughness information DA n of one wafer 200 is used as the roughness information of the backsides 201 of a plurality of wafers 200 that have been continuously ground. In addition, the evaluation unit 94 determines, for example, the maximum value of the amplitude (sound pressure) of the roughness information of the nearest wafer 200 (roughness information DAn of the n-th wafer 200 in FIG. Whether the difference df of the maximum value of the amplitude of the roughness information of the wafer 200 is greater than a predetermined threshold value set in advance. At this time, as long as the difference df is greater than the threshold value, the roughness information of the next (n+1th) wafer 200 will be monitored, and if the difference df is greater than the threshold value, it will be evaluated as poor grinding, and the report will be made, for example. purpose.

在本實施形態中,雖然針對連續地被磨削加工之複數個晶圓200,是各自沿著1條軌跡210來取得晶圓200的背面201的粗糙度資訊,並藉由這些各晶圓200的粗糙度資訊的變化,來評價晶圓200的背面201的狀態的變化,但並非限定於此。例如,亦可以藉由改變測定針113的移動軌跡,來評價1片晶圓200中的背面201的狀態。圖8是顯示移動步驟中的測定針的移動軌跡之另一例的平面圖。圖9是將藉由圖8之移動軌跡而取得的1片晶圓之複數個粗糙度資訊排列來顯示的圖表。在此形態中,雖然是如圖8所示,在測定針113已接觸的狀態下,使旋轉工作台100朝箭頭101方向旋轉,而形成測定針113的移動軌跡,但是會按每次環繞而在晶圓200的半徑方向上變更測定針113的位置,而沿著3個軌跡211、212、213來分別使測定針 113相對地移動。這些軌跡的數量並不限定於3個,只要在2個以上即可。又,亦可沿著形成為螺旋狀的1個軌跡,來移動測定針113。 In the present embodiment, for a plurality of wafers 200 which are continuously ground, the roughness information of the back surface 201 of the wafer 200 is acquired along one track 210 respectively, and the wafers 200 The change in the state of the back surface 201 of the wafer 200 is evaluated by changing the roughness information of the wafer 200, but the present invention is not limited thereto. For example, the state of the back surface 201 of one wafer 200 can also be evaluated by changing the movement locus of the measurement needle 113 . Fig. 8 is a plan view showing another example of the moving track of the measuring needle in the moving step. FIG. 9 is a graph showing arranging and displaying a plurality of pieces of roughness information of one wafer acquired through the movement trace in FIG. 8 . In this form, although as shown in FIG. 8 , the rotary table 100 is rotated in the direction of the arrow 101 in the state where the measuring needle 113 is in contact to form the moving track of the measuring needle 113, but it will be rotated every time it goes around. Change the position of the measuring needle 113 in the radial direction of the wafer 200, and move the measuring needle 113 along the three tracks 211, 212, 213 respectively. 113 moves relatively. The number of these tracks is not limited to three, as long as there are two or more. In addition, the measurement needle 113 may be moved along one trajectory formed in a spiral shape.

在此構成中,是如圖9所示,可對1片晶圓200來從晶圓200的外側到內側,取得對應於3個軌跡211,212,213的3個粗糙度資訊DA11、DA12、DA13。這些粗糙度資訊DA11、DA12、DA13各自具有振幅周期性地振動得較大的部分來作為共通的特徵。因此,可以藉由這些粗糙度資訊DA11、DA12、DA13的周期性的變化,而例如,如圖8所示,評價有無橫跨於3個軌跡211、212、213而形成的傷痕214。 In this configuration, as shown in FIG. 9 , three pieces of roughness information DA 11 , DA corresponding to three tracks 211 , 212 , and 213 can be acquired for one wafer 200 from the outside to the inside of the wafer 200 . 12. DA 13 . Each of these roughness information items DA 11 , DA 12 , and DA 13 has a portion that vibrates periodically with a large amplitude as a common feature. Therefore, it is possible to evaluate whether there is a flaw 214 formed across the three tracks 211, 212 , 213 , for example, as shown in FIG. .

又,在本實施形態中,雖然是藉由使旋轉工作台100旋轉而使測定針113與晶圓200相對地移動,但並非限定於此,亦可例如,如圖10所示,設置使旋轉工作台100朝預定方向(箭頭215方向)直線地移動的移動機構(未圖示),並沿著複數的軌跡216、217、218來使測定針113相對地移動。 In addition, in the present embodiment, although the measuring needle 113 and the wafer 200 are relatively moved by rotating the rotary table 100, it is not limited to this, and for example, as shown in FIG. A moving mechanism (not shown) that linearly moves the table 100 in a predetermined direction (arrow 215 direction) relatively moves the measurement needle 113 along a plurality of trajectories 216 , 217 , and 218 .

以上,本實施形態之評價裝置1,因為具備:旋轉工作台100,保持晶圓200;精磨削單元12,磨削晶圓200;測定針113,接觸於已藉由精磨削單元12磨削之晶圓200的背面201;移動組件120,可移動地保持測定針113;及儲存部93,在已使測定針113接觸於背面201的狀態下,將使測定針113與背面201相對地移動時產生的聲音作為該背面201的粗糙度資訊來儲存,所以可以藉由所儲存之 晶圓200的各背面201的粗糙度資訊的變化來以簡單的構成評價該背面201的磨削狀態,並且可以監視進行磨削加工之評價裝置1的異常或晶圓200的異常。 As mentioned above, the evaluation device 1 of this embodiment is equipped with: the rotary table 100 holding the wafer 200; the fine grinding unit 12 for grinding the wafer 200; The back surface 201 of the chipped wafer 200; the moving assembly 120 is capable of movably holding the measurement needle 113; and the storage unit 93, in the state where the measurement needle 113 is in contact with the back surface 201, will make the measurement needle 113 and the back surface 201 face each other. The sound produced when moving is stored as the roughness information of the back surface 201, so it can be Changes in the roughness information of each back surface 201 of the wafer 200 can be used to evaluate the grinding state of the back surface 201 with a simple configuration, and it is possible to monitor abnormalities of the evaluation apparatus 1 performing grinding processing or abnormalities of the wafer 200 .

再者,本發明並非受限於上述實施形態之發明。亦即,在不脫離本發明之要點的範圍內,可以進行各種變形來實施。在本實施形態中,雖然保持測定針113的移動組件120是設成配置於作為保持組件之旋轉工作台100的周圍的構成,但例如使上述之工作夾台52作為保持組件來發揮機能,並於工作夾台52的周圍設置上述測定針113,且在未執行磨削加工的時間點上,將使測定針113與已磨削之背面201相對地移動時產生的聲音作為該背面201的粗糙度資訊來儲存於儲存部93亦可。 In addition, this invention is not limited to the invention of the said embodiment. That is, various modifications and implementations are possible without departing from the gist of the present invention. In the present embodiment, although the moving unit 120 holding the measuring needle 113 is configured to be arranged around the rotary table 100 as a holding unit, for example, the above-mentioned work clamp table 52 functions as a holding unit, and The measuring needle 113 is provided around the work clamp table 52, and the sound generated when the measuring needle 113 is moved relative to the ground back surface 201 at a point in time when the grinding process is not performed is used as the roughness of the back surface 201. Degree information can also be stored in the storage unit 93.

2:裝置殼體 2: Device housing

68:狀態評價單元 68: Status evaluation unit

90:控制裝置 90: Control device

91:運算處理部 91: Computational Processing Department

92:音聲波形取得部 92: Acquisition of sound waveform

93:儲存部(儲存組件) 93: storage unit (storage component)

94:評價部 94: Evaluation Department

95:麥克風 95: Microphone

100:旋轉工作台(保持組件) 100: Rotary table (holding components)

100A:軸心 100A: axis

101:箭頭 101: Arrow

110:偵測組件 110: Detection component

111:本體 111: Ontology

112:桿件 112: Rod

112A:前端部 112A: front end

113:測定針 113: Measuring needle

120:移動組件 120: Mobile components

121:保持架座 121: cage seat

122:載台 122: carrier

200:晶圓 200: Wafer

201:背面(磨削面) 201: back (grinding surface)

202:正面 202: front

205:保護膠帶 205: Protective Tape

Claims (1)

一種晶圓的評價方法,是評價晶圓的磨削面的狀態,前述晶圓的評價方法的特徵在於:具備:磨削步驟,磨削該晶圓;移動步驟,在已使測定針接觸於晶圓的磨削面的狀態下使該測定針與該晶圓相對地移動;及儲存步驟,將於該移動步驟的實施中所產生的聲音作為磨削面之粗糙度資訊來儲存,以藉由加工裝置在任意的加工條件下連續被磨削的複數個晶圓為對象,而實施該移動步驟及該儲存步驟,且前述評價方法更具備監視步驟,前述監視步驟是從複數個該粗糙度資訊的變化來監視晶圓的磨削面的狀態。 A method for evaluating a wafer is to evaluate the state of a ground surface of a wafer. The method for evaluating a wafer is characterized in that: a grinding step is performed to grind the wafer; Under the state of the grinding surface of the wafer, the measurement needle is moved relative to the wafer; and the storage step stores the sound generated during the implementation of the moving step as the roughness information of the grinding surface, so as to The moving step and the storing step are carried out on a plurality of wafers which are continuously ground by the processing device under arbitrary processing conditions, and the aforementioned evaluation method further includes a monitoring step. Information changes to monitor the state of the grinding surface of the wafer.
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