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TW200801508A - Method and apparatus for detection of mechanical defects in an ingot piece composed of semiconductor material - Google Patents

Method and apparatus for detection of mechanical defects in an ingot piece composed of semiconductor material

Info

Publication number
TW200801508A
TW200801508A TW96121736A TW96121736A TW200801508A TW 200801508 A TW200801508 A TW 200801508A TW 96121736 A TW96121736 A TW 96121736A TW 96121736 A TW96121736 A TW 96121736A TW 200801508 A TW200801508 A TW 200801508A
Authority
TW
Taiwan
Prior art keywords
ingot piece
planar surface
ingot
mechanical defects
detection
Prior art date
Application number
TW96121736A
Other languages
Chinese (zh)
Other versions
TWI356165B (en
Inventor
Ludwig Koester
Peter Czurratis
Klaus Kraemer
Original Assignee
Siltronic Ag
Sam Tec Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag, Sam Tec Gmbh filed Critical Siltronic Ag
Publication of TW200801508A publication Critical patent/TW200801508A/en
Application granted granted Critical
Publication of TWI356165B publication Critical patent/TWI356165B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/11—Analysing solids by measuring attenuation of acoustic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/07—Analysing solids by measuring propagation velocity or propagation time of acoustic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/225—Supports, positioning or alignment in moving situation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/26—Arrangements for orientation or scanning by relative movement of the head and the sensor
    • G01N29/265—Arrangements for orientation or scanning by relative movement of the head and the sensor by moving the sensor relative to a stationary material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/04—Wave modes and trajectories
    • G01N2291/044—Internal reflections (echoes), e.g. on walls or defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/26—Scanned objects
    • G01N2291/262—Linear objects
    • G01N2291/2626—Wires, bars, rods

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The subject matter of the invention is a method for detection of mechanical defects 4 in an ingot piece 1 which is composed of semiconductor material and has at least one planar surface 6 and a thickness, measured at right angles to this surface, of 1 cm to 100cm, with the planar surface (6) of the ingot piece 1 being scanned during the method by at least one ultrasound head 2 which is coupled via a liquid coupling medium 3 to the planar surface 6 of the ingot piece 1and, at each measurement point (x, y) produces at least one ultrasound pulse 8 which is directed at the planar surface 6 of the ingot piece 1, and the ultrasound-pulse echo originating from the ingot piece 1 is recorded as a function of time, such that an echo 9 from the planar surface 6, an echo 11 from a surface 7, opposite the planar surface, of the ingot piece 1 and, possibly, further echoes 10 are detected, with the positions(xp,yp,zp) of mechanical defects 4 in the ingot piece 1 being determined from the further echoes 10. The subject matter of the invention also includes an apparatus for carrying out the method according to the invention, and to the integration of the method in the process chain for production of semiconductor wafers.
TW96121736A 2006-06-22 2007-06-15 Method for the production of a multiplicity of sem TWI356165B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006028650 2006-06-22
DE102006032431A DE102006032431B4 (en) 2006-06-22 2006-07-13 Method and device for detecting mechanical defects in a rod made of semiconductor material

Publications (2)

Publication Number Publication Date
TW200801508A true TW200801508A (en) 2008-01-01
TWI356165B TWI356165B (en) 2012-01-11

Family

ID=38721275

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96121736A TWI356165B (en) 2006-06-22 2007-06-15 Method for the production of a multiplicity of sem

Country Status (4)

Country Link
JP (1) JP5331745B2 (en)
CN (1) CN101093212B (en)
DE (1) DE102006032431B4 (en)
TW (1) TWI356165B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492318B (en) * 2008-03-31 2015-07-11 通用電機股份有限公司 System and method for forming a wafer level package
TWI789480B (en) * 2018-01-11 2023-01-11 日商迪思科股份有限公司 Wafer Evaluation Method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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DE102008002832B4 (en) 2008-04-24 2010-12-09 Institut für Akustomikroskopie Dr. Krämer GmbH Method and device for nondestructive detection of defects in the interior of semiconductor material
US8508239B2 (en) * 2009-05-05 2013-08-13 Lam Research Corporation Non-destructive signal propagation system and method to determine substrate integrity
DE102009044254A1 (en) 2009-10-15 2011-05-05 Institut für Akustomikroskopie Dr. Krämer GmbH Device for nondestructive inspection of the interior of components and transducers therefor
DE202009018526U1 (en) 2009-10-15 2011-12-09 Institut für Akustomikroskopie Dr. Krämer GmbH Device for nondestructive inspection of the interior of components and transducers therefor
WO2012117088A1 (en) 2011-03-03 2012-09-07 Institut für Akustomikroskopie Dr. Krämer GmbH Apparatus for non-destructively inspecting the interior of components
CN102928280A (en) * 2012-11-15 2013-02-13 苏州华碧微科检测技术有限公司 Treatment method of ultrasonic scanning device
CN104022182A (en) * 2014-05-29 2014-09-03 浙江矽盛电子有限公司 Production control and sorting method of silicon chips
JP5931263B1 (en) * 2015-10-14 2016-06-08 株式会社日立パワーソリューションズ Ultrasound imaging device
DE102019208670A1 (en) 2019-06-14 2020-12-17 Siltronic Ag Process for the production of semiconductor wafers from silicon
EP3940124B1 (en) 2020-07-14 2024-01-03 Siltronic AG Monocrystalline silicon crystal article
CN119317513A (en) * 2022-06-03 2025-01-14 应用材料公司 Monitoring acoustic events on substrates

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DE2936882C2 (en) * 1979-09-12 1985-03-21 Kraftwerk Union AG, 4330 Mülheim Test facility for the detection and analysis of material defects
JPS5917154A (en) * 1982-07-20 1984-01-28 Kobe Steel Ltd Method and device for detecting defect by ultrasonic wave method
JPS5960354A (en) * 1982-09-30 1984-04-06 Toshiba Corp Ultrasonic flaw detector
JPS61241659A (en) * 1985-04-19 1986-10-27 Hitachi Micro Comput Eng Ltd Inspection equipment
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JP4247007B2 (en) * 2003-01-31 2009-04-02 富士通株式会社 Semiconductor wafer evaluation method and semiconductor device manufacturing method
JP3861833B2 (en) * 2003-03-14 2006-12-27 株式会社日立製作所 Ultrasonic inspection method and apparatus
CN100372059C (en) * 2003-12-24 2008-02-27 上海宏力半导体制造有限公司 Method for forming semiconductor material wafer and structure therefor
KR20050078907A (en) * 2004-02-03 2005-08-08 엘지전자 주식회사 Method for managing and reproducing a subtitle of high density optical disc
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492318B (en) * 2008-03-31 2015-07-11 通用電機股份有限公司 System and method for forming a wafer level package
TWI789480B (en) * 2018-01-11 2023-01-11 日商迪思科股份有限公司 Wafer Evaluation Method

Also Published As

Publication number Publication date
DE102006032431B4 (en) 2011-12-01
CN101093212B (en) 2011-02-16
JP2010175560A (en) 2010-08-12
JP5331745B2 (en) 2013-10-30
DE102006032431A1 (en) 2007-12-27
CN101093212A (en) 2007-12-26
TWI356165B (en) 2012-01-11

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