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TWI781901B - Polyimide film, copper laminate and circuit substrate - Google Patents

Polyimide film, copper laminate and circuit substrate Download PDF

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Publication number
TWI781901B
TWI781901B TW111117849A TW111117849A TWI781901B TW I781901 B TWI781901 B TW I781901B TW 111117849 A TW111117849 A TW 111117849A TW 111117849 A TW111117849 A TW 111117849A TW I781901 B TWI781901 B TW I781901B
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Taiwan
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parts
weight
diamine
polyimide
thermoplastic polyimide
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TW111117849A
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Chinese (zh)
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TW202233433A (en
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安藤智典
西山哲平
須藤芳樹
森亮
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日商日鐵化學材料股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32LAYERED PRODUCTS
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    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/34Layered products comprising a layer of synthetic resin comprising polyamides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/36Layered products comprising a layer of synthetic resin comprising polyesters
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0393Flexible materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B2250/00Layers arrangement
    • B32B2250/40Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B2270/00Resin or rubber layer containing a blend of at least two different polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/204Di-electric
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206Insulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
    • B32B2307/54Yield strength; Tensile strength
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B2307/70Other properties
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B2307/70Other properties
    • B32B2307/732Dimensional properties
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    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B32B2457/00Electrical equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
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    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates

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Abstract

一種聚醯亞胺膜,其具有非熱塑性聚醯亞胺層,且構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺較佳為相對於四羧酸殘基的100莫耳份而合計包含80莫耳份以上的由3,3',4,4'-聯苯四羧酸二酐(BPDA)所衍生的BPDA殘基及由1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)所衍生的TAHQ殘基中的至少一種以及由均苯四甲酸二酐(PMDA)所衍生的PMDA殘基及由2,3,6,7-萘四羧酸二酐(NTCDA)所衍生的NTCDA殘基中的至少一種,且較佳為介電正切(Df)為0.004以下。A polyimide film, which has a non-thermoplastic polyimide layer, and the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer is preferably totaled with respect to 100 mole parts of tetracarboxylic acid residues Contains more than 80 molar parts of BPDA residues derived from 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 1,4-phenylene bis(trimellitic acid mono At least one of TAHQ residues derived from ester) dianhydride (TAHQ) and PMDA residues derived from pyromellitic dianhydride (PMDA) and 2,3,6,7-naphthalene tetracarboxylic dianhydride (NTCDA) at least one of the NTCDA residues derived, and preferably a dielectric tangent (Df) of 0.004 or less.

Description

聚醯亞胺膜、銅張積層板及電路基板Polyimide film, copper tension laminate and circuit board

本發明是有關於一種聚醯亞胺膜、銅張積層板及電路基板。The invention relates to a polyimide film, a copper tension laminate and a circuit substrate.

近年來,伴隨著電子設備的小型化、輕量化、省空間化的進展,對於薄且輕量、具有可撓性並且即便反覆彎曲亦具有優異的耐久性的撓性印刷配線板(撓性印刷電路(Flexible Printed Circuits,FPC))的需要增大。關於FPC,即便在有限的空間亦可實現立體性且高密度的安裝,因此例如於硬式磁碟機(Hard Disk Drive,HDD)、數位影音光碟(Digital Video Disk,DVD)、智慧型手機等電子設備的可動部分的配線、或者電纜、連接器等零件中其用途逐漸擴大。In recent years, with the advancement of miniaturization, weight reduction, and space saving of electronic equipment, flexible printed wiring boards (flexible printed wiring boards) that are thin, lightweight, flexible, and have excellent durability even after repeated bending Circuit (Flexible Printed Circuits, FPC)) needs to increase. Regarding FPC, it can achieve three-dimensional and high-density installation even in a limited space, so it can be used in hard disk drives (Hard Disk Drive, HDD), digital video disks (Digital Video Disk, DVD), smart phones and other electronic devices. Its use is gradually expanding in the wiring of movable parts of equipment, or in parts such as cables and connectors.

除了所述高密度化以外,設備的高性能化得到推進,因此亦需要對於傳輸信號的高頻化的應對。於傳輸高頻信號時,在信號的傳輸路徑的傳輸損失大的情況下,會產生電信號的損耗或信號的推遲時間變長等不良情況。因此,FPC的傳輸損失的減少變得重要。為了應對高頻化,使用將以低介電常數、低介電正切為特徵的液晶聚合物作為介電層的FPC。然而,液晶聚合物雖介電特性優異,但耐熱性或與金屬箔的接著性存在改善的餘地。In addition to the above-mentioned increase in density, the increase in performance of equipment is being promoted, and therefore it is also necessary to deal with the increase in the frequency of transmission signals. When transmitting a high-frequency signal, if the transmission loss of the signal transmission path is large, there will be disadvantages such as loss of the electrical signal or a longer delay time of the signal. Therefore, reduction of transmission loss of FPC becomes important. In order to cope with higher frequencies, FPCs using liquid crystal polymers featuring low dielectric constant and low dielectric tangent as the dielectric layer are used. However, although liquid crystal polymers are excellent in dielectric properties, there is room for improvement in heat resistance and adhesion to metal foil.

為了改善耐熱性或接著性,提出了使聚醯亞胺為絕緣層的金屬張積層板(專利文獻1)。根據專利文獻1可知通常藉由高分子材料的單體使用脂肪族系單體而介電常數下降,使用脂肪族(鏈狀)四羧酸二酐而獲得的聚醯亞胺的耐熱性顯著低,因此無法供於焊接等加工而於實用上存在問題,但若使用脂環族四羧酸二酐,則與鏈狀四羧酸二酐相比可獲得耐熱性提高的聚醯亞胺。然而,關於由所述聚醯亞胺形成的聚醯亞胺膜,雖然10 GHz下的介電常數為3.2以下,但介電正切超過0.01,介電特性尚不充分。另外,關於使用所述脂肪族單體的聚醯亞胺,存在如下課題:線膨脹係數大者多、聚醯亞胺膜的尺寸變化率大、或者阻燃性下降。 [現有技術文獻] [專利文獻] In order to improve heat resistance and adhesiveness, a metal tension laminate using polyimide as an insulating layer has been proposed (Patent Document 1). According to Patent Document 1, it can be seen that the dielectric constant is generally lowered by using aliphatic monomers as monomers of polymer materials, and the heat resistance of polyimides obtained by using aliphatic (chain) tetracarboxylic dianhydrides is remarkably low. , Therefore, there is a practical problem because it cannot be used for processing such as welding, but if an alicyclic tetracarboxylic dianhydride is used, a polyimide having improved heat resistance can be obtained compared with a chain tetracarboxylic dianhydride. However, the polyimide film formed of such polyimide has a dielectric constant of 3.2 or less at 10 GHz, but a dielectric tangent of more than 0.01, and the dielectric properties are not yet sufficient. In addition, polyimides using such aliphatic monomers have problems in that many have a large coefficient of linear expansion, the dimensional change rate of the polyimide film is large, or the flame retardancy is lowered. [Prior art literature] [Patent Document]

[專利文獻1]日本專利特開2004-358961號公報[Patent Document 1] Japanese Patent Laid-Open No. 2004-358961

[發明所欲解決之課題] 本發明的目的在於提供一種聚醯亞胺膜,其尺寸穩定性高且具有低吸濕性,並且可藉由使絕緣層的介電正切小而減少傳輸損失,並可較佳地用於高頻用電路基板。 [解決課題之手段] [Problem to be Solved by the Invention] The object of the present invention is to provide a polyimide film which has high dimensional stability and low hygroscopicity, and can reduce transmission loss by making the dielectric tangent of the insulating layer small, and can be preferably used for high frequency circuit boards. [Means to solve the problem]

本發明者等人進行了努力研究,結果發現於電路基板中,關於主要承擔控制尺寸變化率的功能的非熱塑性聚醯亞胺層,進而關於視需要承擔與銅箔的接著的功能的熱塑性聚醯亞胺層,藉由選擇作為聚醯亞胺的原料的單體,可實現確保作為電路基板的必要的尺寸穩定性、以及藉由控制聚醯亞胺的有序性(結晶性)所帶來的低吸濕率化及低介電正切化,從而完成了本發明。The inventors of the present invention conducted diligent research and found that, in the circuit board, the non-thermoplastic polyimide layer mainly functions to control the dimensional change rate, and further, the thermoplastic polyimide layer which functions as the bonding with the copper foil if necessary. For the imide layer, by selecting the monomer used as the raw material of polyimide, it is possible to ensure the necessary dimensional stability as a circuit board and to control the order (crystallinity) of polyimide. The low moisture absorption rate and low dielectric tangent, thus completing the present invention.

即,本發明的第1觀點的聚醯亞胺膜是於包含非熱塑性聚醯亞胺的非熱塑性聚醯亞胺層的至少一面具有包含熱塑性聚醯亞胺的熱塑性聚醯亞胺層的聚醯亞胺膜。 而且,本發明的第1觀點的聚醯亞胺膜的特徵在於:滿足下述條件(a-i)~條件(a-iv)。 (a-i)構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺為包含四羧酸殘基及二胺殘基者,且 相對於所述四羧酸殘基的100莫耳份, 由3,3',4,4'-聯苯四羧酸二酐(3,3',4,4'-biphenyl tetracarboxylic dianhydride,BPDA)所衍生的四羧酸殘基(BPDA殘基)及由1,4-伸苯基雙(偏苯三甲酸單酯)二酐(1,4-phenylene bis(trimellitic acid monoester)dianhydride,TAHQ)所衍生的四羧酸殘基(TAHQ殘基)中的至少一種以及由均苯四甲酸二酐(pyromellitic dianhydride,PMDA)所衍生的四羧酸殘基(PMDA殘基)及2,3,6,7-萘四羧酸二酐(2,3,6,7-naphthalene tetracarboxylic dianhydride,NTCDA)所衍生的四羧酸殘基(NTCDA殘基)中的至少一種的合計為80莫耳份以上, 所述BPDA殘基及所述TAHQ殘基中的至少一種、與所述PMDA殘基及所述NTCDA殘基中的至少一種的莫耳比{(BPDA殘基+TAHQ殘基)/(PMDA殘基+NTCDA殘基)}處於0.6~1.3的範圍內。 (a-ii)構成所述熱塑性聚醯亞胺層的熱塑性聚醯亞胺為包含四羧酸殘基及二胺殘基者,且相對於所述二胺殘基的100莫耳份, 由選自下述通式(B1)~通式(B7)表示的二胺化合物中的至少一種二胺化合物所衍生的二胺殘基為70莫耳份以上。 (a-iii)熱膨脹係數為10 ppm/K~30 ppm/K的範圍內。 (a-iv)10 GHz下的介電正切(Dissipation factor,Df)為0.004以下。 That is, the polyimide film according to the first viewpoint of the present invention is a polyimide film having a thermoplastic polyimide layer containing thermoplastic polyimide on at least one side of a non-thermoplastic polyimide layer containing non-thermoplastic polyimide. imide film. Furthermore, the polyimide film according to the first viewpoint of the present invention satisfies the following conditions (a-i) to (a-iv). (a-i) the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer is one containing tetracarboxylic acid residues and diamine residues, and With respect to 100 mole parts of said tetracarboxylic acid residues, Tetracarboxylic acid residues (BPDA residues) derived from 3,3',4,4'-biphenyltetracarboxylic dianhydride (3,3',4,4'-biphenyl tetracarboxylic dianhydride, BPDA) and At least one of the tetracarboxylic acid residues (TAHQ residues) derived from 1,4-phenylene bis(trimellitic acid monoester)dianhydride (TAHQ) One and tetracarboxylic acid residues (PMDA residues) derived from pyromellitic dianhydride (PMDA) and 2,3,6,7-naphthalene tetracarboxylic dianhydride (2,3,6, The total amount of at least one of the tetracarboxylic acid residues (NTCDA residues) derived from 7-naphthalene tetracarboxylic dianhydride (NTCDA) is 80 mole parts or more, The molar ratio of at least one of the BPDA residue and the TAHQ residue to at least one of the PMDA residue and the NTCDA residue {(BPDA residue+TAHQ residue)/(PMDA residue base + NTCDA residue)} in the range of 0.6 to 1.3. (a-ii) The thermoplastic polyimide constituting the thermoplastic polyimide layer contains tetracarboxylic acid residues and diamine residues, and relative to 100 mole parts of the diamine residues, The number of diamine residues derived from at least one diamine compound selected from diamine compounds represented by the following general formulas (B1) to (B7) is 70 mole parts or more. (a-iii) The coefficient of thermal expansion is within the range of 10 ppm/K to 30 ppm/K. (a-iv) The dielectric tangent (Dissipation factor, Df) at 10 GHz is 0.004 or less.

[化1]

Figure 02_image001
[式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數。其中,自式(B3)中去除與式(B2)重複者,自式(B5)中去除與式(B4)重複者] [chemical 1]
Figure 02_image001
[In formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or alkoxy group with 1 to 6 carbons, and the linking group A independently represents a group selected from -O-, -S-, -CO- , -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents 0-4 integer. Among them, the duplicates of formula (B2) are removed from formula (B3), and the duplicates of formula (B4) are removed from formula (B5)]

關於本發明的第1觀點的聚醯亞胺膜,相對於構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中的二胺殘基的100莫耳份,由下述通式(A1)表示的二胺化合物所衍生的二胺殘基可為80莫耳份以上。Regarding the polyimide film according to the first aspect of the present invention, the following general formula The diamine residue derived from the diamine compound represented by (A1) may be 80 mole parts or more.

[化2]

Figure 02_image003
[式(A1)中,連結基X表示單鍵或-COO-,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示0~2的整數,p及q獨立地表示0~4的整數] [Chem 2]
Figure 02_image003
[In the formula (A1), the linking group X represents a single bond or -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, n represents an integer of 0 to 2, and p and q are independently represent an integer from 0 to 4]

本發明的第1觀點的聚醯亞胺膜亦可為:相對於構成所述熱塑性聚醯亞胺層的熱塑性聚醯亞胺中的所述二胺殘基的100莫耳份,由選自所述通式(B1)~通式(B7)表示的二胺化合物中的至少一種二胺化合物所衍生的二胺殘基為70莫耳份以上且99莫耳份以下的範圍內,由所述通式(A1)表示的二胺化合物所衍生的二胺殘基為1莫耳份以上且30莫耳份以下的範圍內。The polyimide film according to the first aspect of the present invention may be a polyimide film selected from the group consisting of: The diamine residue derived from at least one diamine compound among the diamine compounds represented by the general formulas (B1) to (B7) is within the range of 70 mole parts or more and 99 mole parts or less. The diamine residue derived from the diamine compound represented by the general formula (A1) is in the range of not less than 1 mol part and not more than 30 mol parts.

本發明的第2觀點的聚醯亞胺膜是於包含非熱塑性聚醯亞胺的非熱塑性聚醯亞胺層的至少一面具有包含熱塑性聚醯亞胺的熱塑性聚醯亞胺層的聚醯亞胺膜。 而且,本發明的第2觀點的聚醯亞胺膜的特徵在於:滿足下述條件(b-i)~條件(b-iv)。 (b-i)熱膨脹係數為10 ppm/K~30 ppm/K的範圍內。 (b-ii)構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺為包含四羧酸殘基及二胺殘基者,且 相對於所述四羧酸殘基的100莫耳份, 由選自3,3',4,4'-聯苯四羧酸二酐(BPDA)及1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)中的至少一種四羧酸二酐所衍生的四羧酸殘基為30莫耳份以上且60莫耳份以下的範圍內,由均苯四甲酸二酐(PMDA)所衍生的四羧酸殘基為40莫耳份以上且70莫耳份以下的範圍內。 (b-iii)相對於構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中的二胺殘基的100莫耳份, 由下述通式(A1)表示的二胺化合物所衍生的二胺殘基為80莫耳份以上。 (b-iv)構成所述熱塑性聚醯亞胺層的熱塑性聚醯亞胺為包含四羧酸殘基及二胺殘基者,且相對於所述二胺殘基的100莫耳份, 由選自下述通式(B1)~通式(B7)表示的二胺化合物中的至少一種二胺化合物所衍生的二胺殘基為70莫耳份以上且99莫耳份以下的範圍內, 由下述通式(A1)表示的二胺化合物所衍生的二胺殘基為1莫耳份以上且30莫耳份以下的範圍內。 The polyimide film according to the second aspect of the present invention is a polyimide having a thermoplastic polyimide layer containing thermoplastic polyimide on at least one side of a non-thermoplastic polyimide layer containing non-thermoplastic polyimide. Amine film. In addition, the polyimide film according to the second viewpoint of the present invention satisfies the following conditions (b-i) to (b-iv). (b-i) The coefficient of thermal expansion is within the range of 10 ppm/K to 30 ppm/K. (b-ii) the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer contains tetracarboxylic acid residues and diamine residues, and With respect to 100 mole parts of said tetracarboxylic acid residues, It is composed of at least one tetracarboxylic acid dianhydride (BPDA) and 1,4-phenylene bis(trimellitic acid monoester) dianhydride (TAHQ) selected from 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) The tetracarboxylic acid residue derived from carboxylic acid dianhydride is within the range of 30 mole parts to 60 mole parts, and the tetracarboxylic acid residue derived from pyromellitic dianhydride (PMDA) is 40 mole parts Parts or more and 70 mole parts or less. (b-iii) relative to 100 mole parts of diamine residues in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer, The diamine residue derived from the diamine compound represented by the following general formula (A1) is 80 mol parts or more. (b-iv) The thermoplastic polyimide constituting the thermoplastic polyimide layer contains tetracarboxylic acid residues and diamine residues, and relative to 100 mole parts of the diamine residues, The diamine residue derived from at least one diamine compound selected from the diamine compounds represented by the following general formula (B1) to general formula (B7) is within the range of 70 mole parts or more and 99 mole parts or less , The diamine residue derived from the diamine compound represented by the following general formula (A1) exists in the range of 1 mol part or more and 30 mol parts or less.

[化3]

Figure 02_image003
[式(A1)中,連結基X表示單鍵或-COO-,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示0~2的整數,p及q獨立地表示0~4的整數] [Chem 3]
Figure 02_image003
[In the formula (A1), the linking group X represents a single bond or -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, n represents an integer of 0 to 2, and p and q are independently represent an integer from 0 to 4]

[化4]

Figure 02_image001
[式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數。其中,自式(B3)中去除與式(B2)重複者,自式(B5)中去除與式(B4)重複者] [chemical 4]
Figure 02_image001
[In formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or alkoxy group with 1 to 6 carbons, and the linking group A independently represents a group selected from -O-, -S-, -CO- , -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents 0-4 integer. Among them, the duplicates of formula (B2) are removed from formula (B3), and the duplicates of formula (B4) are removed from formula (B5)]

本發明的第1觀點或第2觀點的聚醯亞胺膜亦可為:所述非熱塑性聚醯亞胺及所述熱塑性聚醯亞胺的醯亞胺基濃度均為33重量%以下。In the polyimide film according to the first aspect or the second aspect of the present invention, both the non-thermoplastic polyimide and the thermoplastic polyimide may have an imide group concentration of 33% by weight or less.

本發明的第3觀點的聚醯亞胺膜是具有至少一層非熱塑性聚醯亞胺層的聚醯亞胺膜,且所述聚醯亞胺膜的特徵在於:滿足下述條件(c-i)~條件(c-iii)。 (c-i)構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺為包含四羧酸殘基及二胺殘基者,且 相對於所述四羧酸殘基的100莫耳份,於30莫耳份~60莫耳份的範圍內含有由3,3',4,4'-聯苯四羧酸二酐(BPDA)及1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)中的至少一種所衍生的四羧酸殘基,於40莫耳份~70莫耳份的範圍內含有由均苯四甲酸二酐(PMDA)及2,3,6,7-萘四羧酸二酐(NTCDA)中的至少一種所衍生的四羧酸殘基, 相對於所述二胺殘基的100莫耳份,含有70莫耳份以上的由下述通式(A1)表示的二胺化合物所衍生的二胺殘基。 (c-ii)玻璃轉移溫度為300℃以上。 (c-iii)10 GHz下的介電正切(Df)為0.004以下。 The polyimide film according to the third aspect of the present invention is a polyimide film having at least one non-thermoplastic polyimide layer, and the polyimide film is characterized in that it satisfies the following conditions (c-i) to Condition (c-iii). (c-i) the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer contains tetracarboxylic acid residues and diamine residues, and 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) contained in the range of 30-60 mole parts with respect to 100 mole parts of the tetracarboxylic acid residue And at least one tetracarboxylic acid residue derived from 1,4-phenylene bis(trimellitic acid monoester) dianhydride (TAHQ), containing in the range of 40 mole parts to 70 mole parts Tetracarboxylic acid residues derived from at least one of pyromellitic dianhydride (PMDA) and 2,3,6,7-naphthalenetetracarboxylic dianhydride (NTCDA), The diamine residue derived from the diamine compound represented by the following general formula (A1) contains 70 mol parts or more with respect to 100 mol parts of the said diamine residue. (c-ii) The glass transition temperature is 300° C. or higher. (c-iii) The dielectric tangent (Df) at 10 GHz is 0.004 or less.

[化5]

Figure 02_image003
[式(A1)中,連結基X表示單鍵或-COO-,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示0~2的整數,p及q獨立地表示0~4的整數] [chemical 5]
Figure 02_image003
[In the formula (A1), the linking group X represents a single bond or -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, n represents an integer of 0 to 2, and p and q are independently represent an integer from 0 to 4]

本發明的第3觀點的聚醯亞胺膜亦可為相對於所述二胺殘基的100莫耳份,於2莫耳份~15莫耳份的範圍內含有由下述通式(C1)~通式(C4)表示的二胺化合物所衍生的二胺殘基者。The polyimide film according to the third aspect of the present invention may contain the following general formula (C1 ) to the diamine residue derived from the diamine compound represented by the general formula (C4).

[化6]

Figure 02_image008
[式(C1)~式(C4)中,R 2獨立地表示碳數1~6的一價烴基、烷氧基或烷硫基,連結基A’獨立地表示選自-O-、-SO 2-、-CH 2-或-C(CH 3) 2-中的二價基,連結基X1獨立地表示-CH 2-、-O-CH 2-O-、-O-C 2H 4-O-、-O-C 3H 6-O-、-O-C 4H 8-O-、-O-C 5H 10-O-、-O-CH 2-C(CH 3) 2-CH 2-O-、-C(CH 3) 2-、-C(CF 3) 2-或-SO 2-,n 3獨立地表示1~4的整數,n 4獨立地表示0~4的整數,但於式(C3)中,連結基A’不含-CH 2-、-C(CH 3) 2-、-C(CF 3) 2-或-SO 2-的情況下,n 4的任一者為1以上。其中,於n 3=0的情況下,式(C1)中的兩個胺基並非對位] [chemical 6]
Figure 02_image008
[In formula (C1) to formula (C4), R 2 independently represents a monovalent hydrocarbon group, alkoxy group or alkylthio group with 1 to 6 carbons, and the linking group A' independently represents a group selected from -O-, -SO 2 -, -CH 2 - or -C(CH 3 ) 2 -, the linking group X1 independently represents -CH 2 -, -O-CH 2 -O-, -OC 2 H 4 -O- , -OC 3 H 6 -O-, -OC 4 H 8 -O-, -OC 5 H 10 -O-, -O-CH 2 -C(CH 3 ) 2 -CH 2 -O-, -C( CH 3 ) 2 -, -C(CF 3 ) 2 - or -SO 2 -, n 3 independently represents an integer of 1 to 4, n 4 independently represents an integer of 0 to 4, but in formula (C3), When the linking group A' does not contain -CH 2 -, -C(CH 3 ) 2 -, -C(CF 3 ) 2 - or -SO 2 -, any one of n 4 is 1 or more. Wherein, in the case of n 3 =0, the two amino groups in the formula (C1) are not in the para position]

本發明的第1觀點、第2觀點或第3觀點的銅張積層板具備絕緣層,並且於所述絕緣層的至少一個面具備銅箔,且所述銅張積層板的特徵在於:所述絕緣層包含所述任一觀點所述的聚醯亞胺膜。The copper tension-laminated board according to the first aspect, the second aspect, or the third aspect of the present invention has an insulating layer, and at least one surface of the insulating layer is provided with copper foil, and the copper tension-laminated board is characterized in that: The insulating layer includes the polyimide film according to any one of the above viewpoints.

本發明的第1觀點、第2觀點或第3觀點的電路基板是將所述銅張積層板的銅箔加工成配線而成者。 [發明的效果] The circuit board of the 1st viewpoint of this invention, a 2nd viewpoint, or a 3rd viewpoint is what processed the copper foil of the said copper tension laminated board into wiring. [Effect of the invention]

本發明的第1觀點~第3觀點的聚醯亞胺膜藉由以特定的酸酐作為原料來形成非熱塑性聚醯亞胺層,可實現作為基質樹脂層的物性的確保及低吸濕率化的併存,且可實現低介電正切化。 另外,本發明的第1觀點或第2觀點的聚醯亞胺膜可藉由利用導入了特定的二胺化合物的熱塑性聚醯亞胺形成熱塑性聚醯亞胺層而實現低吸濕率化及低介電正切化。而且,關於將兩樹脂層組合的多層膜,吸濕性及介電正切低,且銅箔的熱壓接後的尺寸穩定性亦優異。 因此,藉由利用本發明的聚醯亞胺膜及使用其的銅張積層板來作為FPC材料,可於電路基板中實現可靠性與良率的提高,例如亦可應用於傳輸10 GHz以上的高頻信號的電路基板等中。 The polyimide film of the first aspect to the third aspect of the present invention can ensure the physical properties of the matrix resin layer and reduce the moisture absorption rate by forming a non-thermoplastic polyimide layer using a specific acid anhydride as a raw material. Coexistence, and can achieve low dielectric tangent. In addition, the polyimide film according to the first viewpoint or the second viewpoint of the present invention can realize low moisture absorption rate and Low dielectric tangent. Furthermore, the multilayer film combining two resin layers has low hygroscopicity and a dielectric tangent, and is excellent in dimensional stability after thermocompression bonding of copper foil. Therefore, by using the polyimide film of the present invention and the copper tension laminated board using it as the FPC material, the improvement of reliability and yield can be realized in the circuit board, for example, it can also be applied to transmission of more than 10 GHz Circuit boards for high-frequency signals, etc.

其次,對本發明的實施形態進行說明。Next, embodiments of the present invention will be described.

[聚醯亞胺膜] 本發明的第1實施形態的聚醯亞胺膜是於包含非熱塑性聚醯亞胺的非熱塑性聚醯亞胺層的至少一面具有包含熱塑性聚醯亞胺的熱塑性聚醯亞胺層,且滿足所述條件(a-i)~條件(a-iv)者。 另外,本發明的第2實施形態的聚醯亞胺膜是於包含非熱塑性聚醯亞胺的非熱塑性聚醯亞胺層的至少一面具有包含熱塑性聚醯亞胺的熱塑性聚醯亞胺層,且滿足所述條件(b-i)~條件(b-iv)者。 再者,第1實施形態或第2實施形態中,熱塑性聚醯亞胺層設置於非熱塑性聚醯亞胺層的單面或兩面。例如,於積層第1實施形態或第2實施形態的聚醯亞胺膜與銅箔而製成銅張積層板的情況下,銅箔可積層於熱塑性聚醯亞胺層的面上。於在非熱塑性聚醯亞胺層的兩側具有熱塑性聚醯亞胺層的情況下,只要其中一側的熱塑性聚醯亞胺層滿足所述條件(a-ii)或條件(b-iv)即可,但較佳為兩側的熱塑性聚醯亞胺層均滿足所述條件(a-ii)或條件(b-iv)。 另外,本發明的第3實施形態的聚醯亞胺膜是具有至少一層包含非熱塑性聚醯亞胺的非熱塑性聚醯亞胺層,且滿足所述條件(c-i)~條件(c-iii)者。 [Polyimide film] The polyimide film according to the first embodiment of the present invention has a thermoplastic polyimide layer containing thermoplastic polyimide on at least one side of the non-thermoplastic polyimide layer containing non-thermoplastic polyimide, and satisfies The above-mentioned conditions (a-i) to conditions (a-iv). In addition, the polyimide film of the second embodiment of the present invention has a thermoplastic polyimide layer containing thermoplastic polyimide on at least one side of the non-thermoplastic polyimide layer containing non-thermoplastic polyimide, And those who satisfy the conditions (b-i) to (b-iv) above. Furthermore, in the first embodiment or the second embodiment, the thermoplastic polyimide layer is provided on one or both surfaces of the non-thermoplastic polyimide layer. For example, when the polyimide film and copper foil of the first embodiment or the second embodiment are laminated to form a copper tensioned laminate, the copper foil may be laminated on the surface of the thermoplastic polyimide layer. In the case of having a thermoplastic polyimide layer on both sides of a non-thermoplastic polyimide layer, as long as the thermoplastic polyimide layer on one side satisfies the condition (a-ii) or condition (b-iv) That is enough, but preferably, the thermoplastic polyimide layers on both sides satisfy the condition (a-ii) or condition (b-iv). In addition, the polyimide film according to the third embodiment of the present invention has at least one non-thermoplastic polyimide layer containing non-thermoplastic polyimide, and satisfies the above-mentioned conditions (c-i) to conditions (c-iii) By.

以下,關於第1實施形態~第3實施形態,對共通的方面匯總進行說明,對不同的方面分別進行說明。Hereinafter, regarding the first embodiment to the third embodiment, common points will be collectively described, and different points will be described separately.

所謂「非熱塑性聚醯亞胺」通常是即便進行加熱亦不會顯示出軟化、接著性的聚醯亞胺,但於本發明中是指使用動態黏彈性測定裝置(動態機械分析儀(Dynamic Mechanical Analysis,DMA))而測定的30℃下的儲存彈性係數為1.0×10 9Pa以上、280℃下的儲存彈性係數為3.0×10 8Pa以上的聚醯亞胺。 另外,所謂「熱塑性聚醯亞胺」通常是可明確確認玻璃轉移溫度(glass transition temperature,Tg)的聚醯亞胺,但於本發明中是指使用DMA而測定的30℃下的儲存彈性係數為1.0×10 9Pa以上、280℃下的儲存彈性係數為未滿3.0×10 8Pa的聚醯亞胺。 The so-called "non-thermoplastic polyimide" is usually a polyimide that does not show softening and adhesion even when heated, but in the present invention refers to a dynamic viscoelasticity measurement device (Dynamic Mechanical Analyzer (Dynamic Mechanical Analyzer) Analysis, DMA)) and the storage modulus of elasticity measured at 30°C is 1.0×10 9 Pa or more, and the storage modulus of elasticity at 280°C is 3.0×10 8 Pa or more. In addition, "thermoplastic polyimide" is usually a polyimide whose glass transition temperature (Tg) can be clearly confirmed, but in the present invention refers to the storage elastic coefficient at 30°C measured using DMA A polyimide having a storage modulus of elasticity at 280°C of 1.0×10 9 Pa or more and less than 3.0×10 8 Pa.

第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜中,非熱塑性聚醯亞胺層的樹脂成分較佳為包含非熱塑性聚醯亞胺,第1實施形態或第2實施形態中,熱塑性聚醯亞胺層的樹脂成分較佳為包含熱塑性聚醯亞胺。另外,非熱塑性聚醯亞胺層構成低熱膨脹性的聚醯亞胺層,熱塑性聚醯亞胺層構成高熱膨脹性的聚醯亞胺層。此處,低熱膨脹性的聚醯亞胺層是指熱膨脹係數(Coefficient of Thermal Expansion,CTE)較佳為1 ppm/K以上且25 ppm/K以下的範圍內、更佳為3 ppm/K以上且25 ppm/K以下的範圍內的聚醯亞胺層。另外,高熱膨脹性的聚醯亞胺層是指CTE較佳為35 ppm/K以上、更佳為35 ppm/K以上且80 ppm/K以下的範圍內、進而佳為35 ppm/K以上且70 ppm/K以下的範圍內的聚醯亞胺層。聚醯亞胺層可藉由適當變更所使用的原料的組合、厚度、乾燥·硬化條件而製成具有所需的CTE的聚醯亞胺層。In the polyimide film of the first embodiment, the second embodiment or the third embodiment, the resin component of the non-thermoplastic polyimide layer preferably contains non-thermoplastic polyimide, and the first embodiment or the second embodiment In an embodiment, the resin component of the thermoplastic polyimide layer preferably contains thermoplastic polyimide. In addition, the non-thermoplastic polyimide layer constitutes a low thermal expansion polyimide layer, and the thermoplastic polyimide layer constitutes a high thermal expansion polyimide layer. Here, the polyimide layer with low thermal expansion means that the coefficient of thermal expansion (Coefficient of Thermal Expansion, CTE) is preferably in the range of 1 ppm/K or more and 25 ppm/K or less, more preferably 3 ppm/K or more And the polyimide layer in the range below 25 ppm/K. In addition, the highly thermally expandable polyimide layer means that the CTE is preferably 35 ppm/K or more, more preferably 35 ppm/K or more and 80 ppm/K or less, and more preferably 35 ppm/K or more and Polyimide layer in the range below 70 ppm/K. The polyimide layer can be made into a polyimide layer having a desired CTE by appropriately changing the combination of raw materials used, the thickness, and drying and curing conditions.

通常聚醯亞胺可藉由使四羧酸二酐與二胺化合物於溶媒中反應且於生成聚醯胺酸後進行加熱閉環而加以製造。例如,使大致等莫耳的四羧酸二酐與二胺化合物溶解於有機溶媒中,於0℃~100℃的範圍內的溫度下進行30分鐘~24小時攪拌而進行聚合反應,藉此可獲得作為聚醯亞胺前驅物的聚醯胺酸。於反應時,以所生成的前驅物於有機溶媒中成為5重量%~30重量%的範圍內、更佳為10重量%~20重量%的範圍內的方式溶解反應成分。作為聚合反應中使用的有機溶媒,例如可列舉:N,N-二甲基甲醯胺(N,N-dimethyl formamide,DMF)、N,N-二甲基乙醯胺(N,N-dimethyl acetamide,DMAc)、N,N-二乙基乙醯胺、N-甲基-2-吡咯啶酮(N-methyl-2-pyrrolidone,NMP)、2-丁酮、二甲基亞碸(Dimethyl sulfoxide,DMSO)、六甲基磷醯胺、N-甲基己內醯胺、硫酸二甲酯、環己酮、二噁烷、四氫呋喃、二甘醇二甲醚(diglyme)、三甘醇二甲醚、甲酚等。亦可將該些溶媒併用使用兩種以上,進而亦可併用如二甲苯、甲苯般的芳香族烴。另外,作為所述有機溶媒的使用量,並無特別限制,但較佳為調整為藉由聚合反應而獲得的聚醯胺酸溶液的濃度成為5重量%~30重量%左右的使用量而加以使用。Generally, polyimide can be produced by reacting tetracarboxylic dianhydride and diamine compound in a solvent, and heating and ring-closing after producing polyamic acid. For example, approximately equimolar tetracarboxylic dianhydride and a diamine compound are dissolved in an organic solvent, stirred at a temperature in the range of 0° C. to 100° C. for 30 minutes to 24 hours to perform a polymerization reaction, whereby the Polyamic acid is obtained as a polyimide precursor. During the reaction, the reaction components are dissolved so that the generated precursor is within the range of 5% by weight to 30% by weight, more preferably within the range of 10% by weight to 20% by weight, in the organic solvent. Examples of the organic solvent used in the polymerization reaction include: N,N-dimethylformamide (N,N-dimethyl formamide, DMF), N,N-dimethylacetamide (N,N-dimethyl acetamide, DMAc), N,N-diethylacetamide, N-methyl-2-pyrrolidone (N-methyl-2-pyrrolidone, NMP), 2-butanone, dimethylsulfoxide (Dimethyl sulfoxide, DMSO), hexamethylphosphamide, N-methylcaprolactam, dimethyl sulfate, cyclohexanone, dioxane, tetrahydrofuran, diglyme, triethylene glycol Methyl ether, cresol, etc. These solvents may be used in combination of two or more, and further aromatic hydrocarbons such as xylene and toluene may also be used in combination. In addition, the amount of the organic solvent used is not particularly limited, but it is preferably adjusted so that the concentration of the polyamic acid solution obtained by the polymerization reaction becomes about 5% by weight to 30% by weight. use.

所合成的聚醯胺酸通常有利的是作為反應溶媒溶液而使用,但可視需要進行濃縮、稀釋或置換為其他有機溶媒。另外,聚醯胺酸通常溶媒可溶性優異,因此可有利地使用。聚醯胺酸的溶液的黏度較佳為500 cps~100,000 cps的範圍內。若脫離所述範圍,則於利用塗佈機等進行的塗敷作業時膜容易發生厚度偏差、條紋等不良情況。使聚醯胺酸醯亞胺化的方法並無特別限制,例如可較佳地採用於所述溶媒中在80℃~400℃的範圍內的溫度條件下花1小時~24小時進行加熱的熱處理。The synthesized polyamic acid is usually advantageously used as a reaction solvent solution, but it may be concentrated, diluted or replaced with other organic solvents if necessary. In addition, polyamic acid is generally excellent in solvent solubility, so it can be used advantageously. The viscosity of the solution of polyamide acid is preferably in the range of 500 cps to 100,000 cps. If it deviates from the above-mentioned range, defects such as thickness variation and streaks are likely to occur in the film at the time of coating operation with a coater or the like. The method of imidizing the polyamide is not particularly limited, and for example, heat treatment in which the solvent is heated at a temperature in the range of 80°C to 400°C for 1 hour to 24 hours can be preferably used. .

聚醯亞胺是對所述聚醯胺酸進行醯亞胺化而成者,且是使特定的酸酐與二胺化合物反應而加以製造,因此藉由對酸酐與二胺化合物進行說明,第1實施形態、第2實施形態或第3實施形態的非熱塑性聚醯亞胺及第1實施形態或第2實施形態的熱塑性聚醯亞胺的具體例得以理解。Polyimide is obtained by imidizing the above-mentioned polyamic acid, and is produced by reacting a specific acid anhydride and a diamine compound. Therefore, by describing the acid anhydride and the diamine compound, the first Specific examples of the non-thermoplastic polyimide of the embodiment, the second embodiment or the third embodiment, and the thermoplastic polyimide of the first embodiment or the second embodiment are understood.

<非熱塑性聚醯亞胺> 第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜中,構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺為包含四羧酸殘基及二胺殘基者。再者,本發明中,所謂四羧酸殘基表示由四羧酸二酐所衍生的四價基,所謂二胺殘基表示由二胺化合物所衍生的二價基。第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜較佳為包含由芳香族四羧酸二酐所衍生的芳香族四羧酸殘基及由芳香族二胺所衍生的芳香族二胺殘基。 <Non-thermoplastic polyimide> In the polyimide film of the first embodiment, the second embodiment, or the third embodiment, the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer contains tetracarboxylic acid residues and diamine residues. . In addition, in this invention, a tetracarboxylic-acid residue shows the tetravalent group derived from tetracarboxylic dianhydride, and a diamine residue shows the divalent group derived from a diamine compound. The polyimide film of the first embodiment, the second embodiment, or the third embodiment preferably includes an aromatic tetracarboxylic acid residue derived from an aromatic tetracarboxylic dianhydride and an aromatic diamine derived polyimide film. aromatic diamine residues.

(四羧酸殘基) 第1實施形態、第2實施形態或第3實施形態中,含有由3,3',4,4'-聯苯四羧酸二酐(BPDA)及1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)中的至少一種所衍生的四羧酸殘基以及由均苯四甲酸二酐(PMDA)及2,3,6,7-萘四羧酸二酐(NTCDA)中的至少一種所衍生的四羧酸殘基作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中所含的四羧酸殘基。 (tetracarboxylic acid residue) In the first embodiment, the second embodiment or the third embodiment, containing 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 1,4-phenylene bis( Tetracarboxylic acid residues derived from at least one of tricarboxylic acid dianhydride (TAHQ) and pyromellitic dianhydride (PMDA) and 2,3,6,7-naphthalene tetracarboxylic dianhydride (NTCDA ) as a tetracarboxylic acid residue contained in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer.

由BPDA所衍生的四羧酸殘基(以下,亦稱為「BPDA殘基」)及由TAHQ所衍生的四羧酸殘基(以下,亦稱為「TAHQ殘基」)容易形成聚合物的有序結構,可藉由抑制分子的運動而使介電正切或吸濕性下降。但是,另一方面,BPDA殘基可賦予作為聚醯亞胺前驅物的聚醯胺酸的凝膠膜的自支持性,但出現使醯亞胺化後的CTE增大且使玻璃轉移溫度降低並使耐熱性下降的傾向。Tetracarboxylic acid residues derived from BPDA (hereinafter also referred to as "BPDA residues") and tetracarboxylic acid residues derived from TAHQ (hereinafter also referred to as "TAHQ residues") easily form polymers The ordered structure can reduce the dielectric tangent or hygroscopicity by inhibiting the movement of molecules. However, on the other hand, BPDA residues can impart self-supporting properties to the gel film of polyamic acid, which is a precursor of polyimide, but appear to increase the CTE after imidization and lower the glass transition temperature. And the tendency to reduce heat resistance.

就所述觀點而言,第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜以構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺相對於四羧酸殘基的100莫耳份而於合計較佳為30莫耳份以上且60莫耳份以下的範圍內、更佳為40莫耳份以上且50莫耳份以下的範圍內含有BPDA殘基及TAHQ   殘基的方式進行控制。若BPDA殘基及TAHQ殘基的合計未滿30莫耳份,則聚合物的有序結構的形成變得不充分,耐吸濕性下降,或者介電正切的減少變得不充分,若超過60莫耳份,則除了CTE的增加或面內延遲(RO)的變化量的增大以外,有耐熱性下降之虞。From this point of view, in the polyimide film of the first embodiment, the second embodiment, or the third embodiment, the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer has a higher proportion than the tetracarboxylic acid residue. 100 mol parts of BPDA residues and TAHQ residues are contained within a range of preferably 30 mol parts or more and 60 mol parts or less in total, more preferably 40 mol parts or more and 50 mol parts or less. base control. If the total of BPDA residues and TAHQ residues is less than 30 mole parts, the formation of the ordered structure of the polymer becomes insufficient, the moisture absorption resistance decreases, or the reduction of the dielectric tangent becomes insufficient. If it exceeds 60 If the molar portion is used, in addition to an increase in CTE or an increase in the amount of change in in-plane retardation (RO), there is a possibility that heat resistance will decrease.

另外,由均苯四甲酸二酐所衍生的四羧酸殘基(以下,亦稱為「PMDA殘基」)及由2,3,6,7-萘四羧酸二酐所衍生的四羧酸殘基(以下,亦稱為「NTCDA殘基」)具有剛直性,因此是提高面內配向性、較低地抑制CTE且承擔RO的控制、或者玻璃轉移溫度的控制的作用的殘基。另一方面,PMDA殘基由於分子量小,因此若其量變得過多,則聚合物的醯亞胺基濃度變高,極性基增加而吸濕性變大,由於分子鏈內部的水分的影響而介電正切增加。另外,NTCDA殘基出現因剛直性高的萘骨架而膜容易變脆且使彈性係數增大的傾向。In addition, tetracarboxylic acid residues derived from pyromellitic dianhydride (hereinafter also referred to as "PMDA residues") and tetracarboxylic acid residues derived from 2,3,6,7-naphthalene tetracarboxylic dianhydride Acid residues (hereinafter, also referred to as “NTCDA residues”) have rigidity, and therefore are residues that improve in-plane alignment, lower CTE suppression, and play a role in RO control or glass transition temperature control. On the other hand, since the PMDA residue has a small molecular weight, if its amount becomes too much, the concentration of the imide group of the polymer becomes high, the polar group increases and the hygroscopicity becomes large, and due to the influence of moisture inside the molecular chain. Electric tangent increases. In addition, the NTCDA residue tends to increase the modulus of elasticity by easily making the film brittle due to the highly rigid naphthalene skeleton.

因此,第1實施形態、第2實施形態或第3實施形態中,構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺相對於四羧酸殘基的100莫耳份而於合計較佳為40莫耳份以上且70莫耳份以下的範圍內、更佳為50莫耳份以上且60莫耳份以下的範圍內、進而佳為50莫耳份~55莫耳份的範圍內含有PMDA殘基及NTCDA殘基。若PMDA殘基及NTCDA殘基的合計未滿40莫耳份,則有CTE增加或者耐熱性下降之虞,若超過70莫耳份,則有聚合物的醯亞胺基濃度變高,極性基增加且低吸濕性受損,介電正切增加之虞,或者有膜變脆且膜的自支持性下降之虞。Therefore, in the first embodiment, the second embodiment, or the third embodiment, the total of the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer is preferable with respect to 100 mole parts of the tetracarboxylic acid residue. It is contained within the range of 40 mole parts to 70 mole parts, more preferably 50 mole parts to 60 mole parts, and more preferably 50 mole parts to 55 mole parts PMDA residues and NTCDA residues. If the total of PMDA residues and NTCDA residues is less than 40 molar parts, there is a possibility that the CTE increases or the heat resistance decreases, and if it exceeds 70 molar parts, the concentration of the imide group of the polymer becomes high, and the polar group Increase and low hygroscopicity may be impaired, the dielectric tangent may increase, or the film may become brittle and the self-supporting property of the film may decrease.

另外,第1實施形態中,如所述條件(a-i)規定般,BPDA殘基及TAHQ殘基中的至少一種以及PMDA殘基及NTCDA殘基中的至少一種的合計相對於四羧酸殘基的100莫耳份而為80莫耳份以上,較佳為90莫耳份以上。In addition, in the first embodiment, as specified in the condition (a-i), the total of at least one of BPDA residues and TAHQ residues and at least one of PMDA residues and NTCDA residues is relative to the tetracarboxylic acid residues 100 mole parts of 80 mole parts or more, preferably 90 mole parts or more.

另外,第1實施形態中,如所述條件(a-i)規定般,將BPDA殘基及TAHQ殘基中的至少一種、與PMDA殘基及NTCDA殘基中的至少一種的莫耳比{(BPDA殘基+TAHQ殘基)/(PMDA殘基+NTCDA殘基)}設為0.6以上且1.3以下的範圍內、較佳為0.7以上且1.3以下的範圍內、更佳為0.8以上且1.2以下的範圍內,控制CTE與聚合物的有序結構的形成。In addition, in the first embodiment, as defined in the condition (a-i), the molar ratio of at least one of BPDA residues and TAHQ residues to at least one of PMDA residues and NTCDA residues {(BPDA residue+TAHQ residue)/(PMDA residue+NTCDA residue)} is set within the range of 0.6 to 1.3, preferably 0.7 to 1.3, more preferably 0.8 to 1.2 Within the range, control the CTE and the formation of the ordered structure of the polymer.

第1實施形態、第2實施形態或第3實施形態中,PMDA及NTCDA具有剛直骨架,因此與其他一般的酸酐成分相比,可控制聚醯亞胺中的分子的面內配向性,具有熱膨脹係數(CTE)的抑制與玻璃轉移溫度(Tg)的提高效果。另外,與PMDA相比,BPDA及TAHQ的分子量大,因此由於裝入比率的增加醯亞胺基濃度下降,藉此對於介電正切的下降或吸濕率的下降具有效果。另一方面,若BPDA及TAHQ的裝入比率增加,則聚醯亞胺中的分子的面內配向性下降,而導致CTE的增加。進而,分子內的有序結構的形成得到推進,霧度值增加。就所述觀點而言,PMDA及NTCDA的合計裝入量相對於原料的所有酸酐成分的100莫耳份,可為40莫耳份~70莫耳份的範圍內、較佳為50莫耳份~60莫耳份的範圍內、更佳為50莫耳份~55莫耳份的範圍內。若相對於原料的所有酸酐成分的100莫耳份,PMDA及NTCDA的合計裝入量未滿40莫耳份,則分子的面內配向性下降,且低CTE化變得困難,另外Tg的下降所引起的加熱時的膜的耐熱性或尺寸穩定性下降。另一方面,若PMDA及NTCDA的合計裝入量超過70莫耳份,則出現因醯亞胺基濃度的增加而吸濕率變差,或者使彈性係數增大的傾向。In the first embodiment, the second embodiment, or the third embodiment, PMDA and NTCDA have rigid skeletons, so compared with other common acid anhydride components, the in-plane alignment of molecules in polyimide can be controlled, and thermal expansion Coefficient of suppression (CTE) and glass transition temperature (Tg) enhancement effect. In addition, since BPDA and TAHQ have larger molecular weights than PMDA, the concentration of imide groups decreases due to an increase in the loading ratio, which is effective in reducing the dielectric tangent or the moisture absorption rate. On the other hand, when the loading ratio of BPDA and TAHQ increases, the in-plane alignment of molecules in polyimide decreases, leading to an increase in CTE. Furthermore, the formation of an ordered structure in the molecule is promoted, and the haze value increases. From this point of view, the total loading amount of PMDA and NTCDA can be within the range of 40 mole parts to 70 mole parts, preferably 50 mole parts relative to 100 mole parts of all the acid anhydride components of the raw material. It is in the range of ∼60 molar parts, more preferably in the range of 50 molar parts to 55 molar parts. If the total loading amount of PMDA and NTCDA is less than 40 mole parts with respect to 100 mole parts of all the acid anhydride components of the raw material, the in-plane alignment of the molecules will decrease, and it will be difficult to achieve a low CTE, and the Tg will also decrease. The resulting heat resistance or dimensional stability of the film during heating decreases. On the other hand, if the total charge of PMDA and NTCDA exceeds 70 molar parts, the moisture absorption rate will deteriorate due to the increase of the imide group concentration, or the modulus of elasticity will tend to increase.

另外,BPDA及TAHQ對分子運動的抑制或醯亞胺基濃度的下降所引起的低介電正切化、吸濕率下降具有效果,但會使作為醯亞胺化後的聚醯亞胺膜的CTE增大。就所述觀點而言,BPDA及TAHQ的合計裝入量相對於原料的所有酸酐成分的100莫耳份,可為30莫耳份~60莫耳份的範圍內、較佳為40莫耳份~50莫耳份的範圍內、更佳為40莫耳份~45莫耳份的範圍內。In addition, BPDA and TAHQ have effects on the suppression of molecular motion or the reduction of the dielectric tangent and the reduction of the moisture absorption rate caused by the reduction of the concentration of imide groups, but they will cause the polyimide film after imidization to be damaged. Increased CTEs. From this point of view, the total charged amount of BPDA and TAHQ may be in the range of 30 to 60 mole parts, preferably 40 mole parts, with respect to 100 mole parts of all acid anhydride components of the raw material. It is in the range of ˜50 molar parts, more preferably in the range of 40 molar parts to 45 molar parts.

作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中所含的所述BPDA殘基、TAHQ殘基、PMDA殘基、NTCDA殘基以外的四羧酸殘基,例如可列舉由3,3',4,4'-二苯基碸四羧酸二酐、4,4'-氧基二鄰苯二甲酸酐、2,3',3,4'-聯苯四羧酸二酐、2,2',3,3'-二苯甲酮四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐或3,3',4,4'-二苯甲酮四羧酸二酐、2,3',3,4'-二苯基醚四羧酸二酐、雙(2,3-二羧基苯基)醚二酐、3,3'',4,4''-對三聯苯四羧酸二酐、2,3,3'',4''-對三聯苯四羧酸二酐或2,2'',3,3''-對三聯苯四羧酸二酐、2,2-雙(2,3-二羧基苯基)-丙烷二酐或2,2-雙(3,4-二羧基苯基)-丙烷二酐、雙(2,3-二羧基苯基)甲烷二酐或雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)碸二酐或雙(3,4-二羧基苯基)碸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐或1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,7,8-菲-四羧酸二酐、1,2,6,7-菲-四羧酸二酐或1,2,9,10-菲-四羧酸二酐、2,3,6,7-蒽四羧酸二酐、2,2-雙(3,4-二羧基苯基)四氟丙烷二酐、2,3,5,6-環己烷二酐、1,2,5,6-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四羧酸二酐、2,6-二氯萘-1,4,5,8-四羧酸二酐或2,7-二氯萘-1,4,5,8-四羧酸二酐、2,3,6,7-(或1,4,5,8-)四氯萘-1,4,5,8-(或2,3,6,7-)四羧酸二酐、2,3,8,9-苝-四羧酸二酐、3,4,9,10-苝-四羧酸二酐、4,5,10,11-苝-四羧酸二酐或5,6,11,12-苝-四羧酸二酐、環戊烷-1,2,3,4-四羧酸二酐、吡嗪-2,3,5,6-四羧酸二酐、吡咯啶-2,3,4,5-四羧酸二酐、噻吩-2,3,4,5-四羧酸二酐、4,4'-雙(2,3-二羧基苯氧基)二苯基甲烷二酐、乙二醇雙偏苯三酸酐等芳香族四羧酸二酐所衍生的四羧酸殘基。Tetracarboxylic acid residues other than the BPDA residue, TAHQ residue, PMDA residue, and NTCDA residue contained in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer include, for example, 3 ,3',4,4'-Diphenyltetracarboxylic dianhydride, 4,4'-oxydiphthalic anhydride, 2,3',3,4'-biphenyltetracarboxylic dianhydride , 2,2',3,3'-benzophenone tetracarboxylic dianhydride, 2,3,3',4'-benzophenone tetracarboxylic dianhydride or 3,3',4,4' -Benzophenone tetracarboxylic dianhydride, 2,3',3,4'-diphenylether tetracarboxylic dianhydride, bis(2,3-dicarboxyphenyl)ether dianhydride, 3,3' ',4,4''-terphenyltetracarboxylic dianhydride, 2,3,3'',4''-terphenyltetracarboxylic dianhydride or 2,2'',3,3''- p-terphenyltetracarboxylic dianhydride, 2,2-bis(2,3-dicarboxyphenyl)-propane dianhydride or 2,2-bis(3,4-dicarboxyphenyl)-propane dianhydride, bis (2,3-dicarboxyphenyl)methane dianhydride or bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)pyridine dianhydride or bis(3,4- Dicarboxyphenyl) dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethanedianhydride or 1,1-bis(3,4-dicarboxyphenyl)ethanedianhydride, 1 ,2,7,8-phenanthrene-tetracarboxylic dianhydride, 1,2,6,7-phenanthrene-tetracarboxylic dianhydride or 1,2,9,10-phenanthrene-tetracarboxylic dianhydride, 2,3 ,6,7-anthracene tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)tetrafluoropropane dianhydride, 2,3,5,6-cyclohexane dianhydride, 1,2 ,5,6-naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene -1,2,5,6-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride or 2,7-dichloronaphthalene-1,4,5 ,8-tetracarboxylic dianhydride, 2,3,6,7-(or 1,4,5,8-)tetrachloronaphthalene-1,4,5,8-(or 2,3,6,7- ) Tetracarboxylic dianhydride, 2,3,8,9-perylene-tetracarboxylic dianhydride, 3,4,9,10-perylene-tetracarboxylic dianhydride, 4,5,10,11-perylene-tetracarboxylic Carboxylic dianhydride or 5,6,11,12-perylene-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrazine-2,3,5,6- Tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride, 4,4'-bis(2,3- Tetracarboxylic acid residues derived from aromatic tetracarboxylic dianhydrides such as dicarboxyphenoxy)diphenylmethane dianhydride and ethylene glycol bis-trimellitic anhydride.

(二胺殘基) 第1實施形態、第2實施形態或第3實施形態中,作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中所含的二胺殘基,較佳為由通式(A1)所表示的二胺化合物所衍生的二胺殘基。 (diamine residue) In the first embodiment, the second embodiment, or the third embodiment, as the diamine residue contained in the non-thermoplastic polyimide layer constituting the non-thermoplastic polyimide layer, it is preferable to have the formula (A1) Diamine residues derived from the indicated diamine compounds.

[化7]

Figure 02_image003
[chemical 7]
Figure 02_image003

式(A1)中,連結基X表示單鍵或-COO-,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示0~2的整數,p及q獨立地表示0~4的整數。此處,所謂「獨立地」表示所述式(A1)中多個連結基X、多個取代基Y、進而整數p、q可相同亦可不同。再者,所述式(A1)中,末端的兩個胺基中的氫原子可經取代,例如亦可為-NR 3R 4(此處,R 3、R 4獨立地表示烷基等任意的取代基)。 In the formula (A1), the linking group X represents a single bond or -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, n represents an integer of 0 to 2, and p and q independently Represents an integer from 0 to 4. Here, the term "independently" means that the plurality of linking groups X, the plurality of substituents Y, and the integers p and q in the formula (A1) may be the same or different. Furthermore, in the formula (A1), the hydrogen atoms in the two terminal amine groups may be substituted, for example, -NR 3 R 4 (here, R 3 and R 4 independently represent any substituents).

通式(A1)所表示的二胺化合物(以下,有時表述為「二胺(A1)」)是具有兩個苯環的芳香族二胺。二胺(A1)具有剛直結構,故具有對聚合物整體賦予有序結構的作用。因此,可獲得透氣性低、低吸濕性的聚醯亞胺,可減少分子鏈內部的水分,故可降低介電正切。此處,作為連結基X,較佳為單鍵。The diamine compound represented by the general formula (A1) (hereinafter, may be referred to as “diamine (A1)”) is an aromatic diamine having two benzene rings. Since diamine (A1) has a rigid structure, it has the effect of imparting an ordered structure to the entire polymer. Therefore, polyimide with low gas permeability and low hygroscopicity can be obtained, and the moisture inside the molecular chain can be reduced, so the dielectric tangent can be reduced. Here, the linking group X is preferably a single bond.

作為二胺(A1),例如可列舉:1,4-二胺基苯(對苯二胺(p-phenylenediamine,p-PDA))、2,2'-二甲基-4,4'-二胺基聯苯(2,2'-dimethyl-4,4'-diamino biphenyl,m-TB)、2,2'-正丙基-4,4'-二胺基聯苯(2,2'-n-propyl-4,4'-diamino biphenyl,m-NPB)、4-胺基苯基-4'-胺基苯甲酸酯(4-amino phenyl-4'-amino benzoate,APAB)等。Examples of the diamine (A1) include 1,4-diaminobenzene (p-phenylenediamine (p-PDA)), 2,2'-dimethyl-4,4'-di Aminobiphenyl (2,2'-dimethyl-4,4'-diamino biphenyl, m-TB), 2,2'-n-propyl-4,4'-diaminobiphenyl (2,2'- n-propyl-4,4'-diamino biphenyl, m-NPB), 4-aminophenyl-4'-amino benzoate (4-aminophenyl-4'-amino benzoate, APAB), etc.

構成第1實施形態或第2實施形態的非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺可相對於二胺殘基的100莫耳份而含有較佳為80莫耳份以上、更佳為85莫耳份以上由二胺(A1)所衍生的二胺殘基。以所述範圍內的量來使用二胺(A1),藉此利用源自單體的剛直結構而容易對聚合物整體形成有序結構,容易獲得透氣性低、低吸濕性且低介電正切的非熱塑性聚醯亞胺。The non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer of the first embodiment or the second embodiment may contain preferably 80 mole parts or more, more preferably 100 mole parts of diamine residues. It is a diamine residue derived from diamine (A1) at least 85 mole parts. By using the diamine (A1) in an amount within the above range, it is easy to form an ordered structure for the entire polymer by utilizing the rigid structure derived from the monomer, and it is easy to obtain low air permeability, low hygroscopicity and low dielectric properties. Tangential non-thermoplastic polyimide.

另外,第1實施形態或第2實施形態中,於相對於非熱塑性聚醯亞胺中的二胺殘基的100莫耳份,由二胺(A1)所衍生的二胺殘基為80莫耳份以上且85莫耳份以下的範圍內的情況下,就為更剛直、面內配向性優異的結構的觀點而言,作為二胺(A1),較佳為使用1,4-二胺基苯。In addition, in the first embodiment or the second embodiment, the diamine residue derived from the diamine (A1) is 80 mol parts with respect to 100 mol parts of the diamine residue in the non-thermoplastic polyimide. When it is within the range of 1 part or more and 85 mol parts or less, it is preferable to use 1,4-diamine as the diamine (A1) from the viewpoint of a more rigid structure with excellent in-plane alignment. Benzene.

第1實施形態或第2實施形態中,作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中所含的其他二胺殘基,例如可列舉由2,2-雙-[4-(3-胺基苯氧基)苯基]丙烷、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)]聯苯、雙[1-(3-胺基苯氧基)]聯苯、雙[4-(3-胺基苯氧基)苯基]甲烷、雙[4-(3-胺基苯氧基)苯基]醚、雙[4-(3-胺基苯氧基)]二苯甲酮、9,9-雙[4-(3-胺基苯氧基)苯基]茀、2,2-雙-[4-(4-胺基苯氧基)苯基]六氟丙烷、2,2-雙-[4-(3-胺基苯氧基)苯基]六氟丙烷、3,3'-二甲基-4,4'-二胺基聯苯、4,4'-亞甲基二-鄰甲苯胺、4,4'-亞甲基二-2,6-二甲苯胺、4,4'-亞甲基-2,6-二乙基苯胺、3,3'-二胺基二苯基乙烷、3,3'-二胺基聯苯、3,3'-二甲氧基聯苯胺、3,3''-二胺基-對三聯苯、4,4'-[1,4-伸苯基雙(1-甲基亞乙基)]雙苯胺、4,4'-[1,3-伸苯基雙(1-甲基亞乙基)]雙苯胺、雙(對胺基環己基)甲烷、雙(對-β-胺基-第三丁基苯基)醚、雙(對-β-甲基-δ-胺基戊基)苯、對-雙(2-甲基-4-胺基戊基)苯、對-雙(1,1-二甲基-5-胺基戊基)苯、1,5-二胺基萘、2,6-二胺基萘、2,4-雙(β-胺基-第三丁基)甲苯、2,4-二胺基甲苯、間二甲苯-2,5-二胺、對二甲苯-2,5-二胺、間二甲苯二胺、對二甲苯二胺、2,6-二胺基吡啶、2,5-二胺基吡啶、2,5-二胺基-1,3,4-噁二唑、哌嗪、2'-甲氧基-4,4'-二胺基苯甲醯苯胺、4,4'-二胺基苯甲醯苯胺、1,3-雙[2-(4-胺基苯基)-2-丙基]苯、6-胺基-2-(4-胺基苯氧基)苯并噁唑等芳香族二胺化合物所衍生的二胺殘基、由二聚酸的兩個末端羧酸基經取代為一級胺基甲基或胺基的二聚酸型二胺等脂肪族二胺化合物所衍生的二胺殘基。In the first embodiment or the second embodiment, as other diamine residues contained in the non-thermoplastic polyimide layer constituting the non-thermoplastic polyimide layer, for example, 2,2-bis-[4- (3-aminophenoxy)phenyl]propane, bis[4-(3-aminophenoxy)phenyl]pyridine, bis[4-(3-aminophenoxy)]biphenyl, bis [1-(3-aminophenoxy)]biphenyl, bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl] Ether, bis[4-(3-aminophenoxy)]benzophenone, 9,9-bis[4-(3-aminophenoxy)phenyl] fennel, 2,2-bis-[ 4-(4-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis-[4-(3-aminophenoxy)phenyl]hexafluoropropane, 3,3'-dimethyl Base-4,4'-diaminobiphenyl, 4,4'-methylene di-o-toluidine, 4,4'-methylene di-2,6-xylidine, 4,4'- Methylene-2,6-diethylaniline, 3,3'-diaminodiphenylethane, 3,3'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 3,3''-diamino-p-terphenyl, 4,4'-[1,4-phenylenebis(1-methylethylene)]bisaniline, 4,4'-[1,3 -Phenylbis(1-methylethylene)]bisaniline, bis(p-aminocyclohexyl)methane, bis(p-β-amino-tert-butylphenyl)ether, bis(p- β-Methyl-δ-aminopentyl)benzene, p-bis(2-methyl-4-aminopentyl)benzene, p-bis(1,1-dimethyl-5-aminopentyl) ) benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis(β-amino-tert-butyl)toluene, 2,4-diaminotoluene, m-diaminotoluene Toluene-2,5-diamine, p-xylene-2,5-diamine, m-xylylenediamine, p-xylylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-Diamino-1,3,4-oxadiazole, piperazine, 2'-methoxy-4,4'-diaminobenzaniline, 4,4'-diaminobenzene Formaniline, 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene, 6-amino-2-(4-aminophenoxy)benzoxazole and other aromatic Diamine residues derived from family diamine compounds, diamine residues derived from aliphatic diamine compounds such as dimer acid-type diamines where the two terminal carboxylic acid groups of dimer acid are substituted with primary aminomethyl or amine groups diamine residues.

另外,於構成第3實施形態的非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中,二胺(A1)如所述條件(c-i)規定般相對於原料的所有二胺成分的100莫耳份可為70莫耳份以上、例如70莫耳份~90莫耳份的範圍內、較佳為80莫耳份~90莫耳份的範圍內。另一方面,若二胺(A1)的裝入量超過90莫耳份,則有時膜的伸長率下降。In addition, in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer of the third embodiment, the diamine (A1) is as specified in the above-mentioned condition (c-i) relative to 100 moles of all the diamine components of the raw material. The ear part may be more than 70 molar parts, for example, within the range of 70-90 molar parts, preferably within the range of 80-90 molar parts. On the other hand, when the loading amount of diamine (A1) exceeds 90 mole parts, the elongation of a film may fall.

另外,第3實施形態中使用的非熱塑性聚醯亞胺較佳為使用選自由通式(C1)~通式(C4)所表示的芳香族二胺所組成的群組中的至少一種芳香族二胺作為原料的二胺成分。二胺(C1)~二胺(C4)具有體積大的取代基或彎曲性的部位,因此可對聚醯亞胺賦予柔軟性。另外,二胺(C1)~二胺(C4)可提高透氣性,因此具有抑制製造多層膜及金屬張積層板時的發泡的效果。就所述觀點而言,較佳為相對於原料的所有二胺成分的100莫耳份而於2莫耳份~15莫耳份的範圍內使用選自二胺(C1)~二胺(C4)中的一種以上的芳香族二胺。若二胺(C1)~二胺(C4)的裝入量未滿2莫耳份,則有時於製造多層膜及金屬張積層板的情況下會發生發泡。另外,若二胺(C1)~二胺(C4)的裝入量超過15莫耳份,則分子的配向性下降,低CTE化變得困難。In addition, it is preferable to use at least one aromatic diamine selected from the group consisting of aromatic diamines represented by general formula (C1) to general formula (C4) as the non-thermoplastic polyimide used in the third embodiment. Diamine is used as the diamine component of the raw material. Since diamines (C1) to (C4) have bulky substituents or flexible sites, flexibility can be imparted to polyimide. Moreover, diamine (C1) - diamine (C4) can improve air permeability, and therefore have the effect of suppressing the foaming at the time of manufacture of a multilayer film and a metal tension laminated board. From this point of view, it is preferable to use diamine (C1) to diamine (C4 ) of one or more aromatic diamines. When the charged amount of diamine (C1) to diamine (C4) is less than 2 mole parts, foaming may occur when producing a multilayer film or a metal tension laminate. Moreover, when the loading amount of diamine (C1) - diamine (C4) exceeds 15 mole parts, the alignment property of a molecule will fall and it will become difficult to lower CTE.

[化8]

Figure 02_image008
[chemical 8]
Figure 02_image008

所述式(C1)~式(C4)中,R 2獨立地表示碳數1~6的一價烴基、烷氧基或烷硫基,連結基A’獨立地表示選自-O-、-SO 2-、-CH 2-或-C(CH 3) 2-中的二價基,較佳為表示選自-O-、-CH 2-或-C(CH 3) 2-中的二價基,連結基X1獨立地表示-CH 2-、-O-CH 2-O-、-O-C 2H 4-O-、-O-C 3H 6-O-、-O-C 4H 8-O-、-O-C 5H 10-O-、-O-CH 2-C(CH 3) 2-CH 2-O-、-C(CH 3) 2-、-C(CF 3) 2-或-SO 2-,n 3獨立地表示1~4的整數,n 4獨立地表示0~4的整數,但於式(C3)中,連結基A’不含-CH 2-、-C(CH 3) 2-、-C(CF 3) 2-或-SO 2-的情況下,n 4的任一者為1以上。其中,於n 3=0的情況下,式(C1)中的兩個胺基並非對位。此處,所謂「獨立地」表示於所述式(C1)~式(C4)內的一個式或兩個以上式中多個連結基A’、多個連結基X1、多個取代基R 2或多個n 3、n 4可相同亦可不同。再者,所述式(C1)~式(C4)中,末端的兩個胺基中的氫原子可經取代,例如亦可為-NR 3R 4(此處,R 3、R 4獨立地表示烷基等任意的取代基)。 In the formulas (C1) to (C4), R2 independently represents a monovalent hydrocarbon group, alkoxy group or alkylthio group with 1 to 6 carbons, and the linking group A' independently represents a group selected from -O-, - The divalent group in SO 2 -, -CH 2 - or -C(CH 3 ) 2 - preferably represents a divalent group selected from -O-, -CH 2 - or -C(CH 3 ) 2 - The linking group X1 independently represents -CH 2 -, -O-CH 2 -O-, -OC 2 H 4 -O-, -OC 3 H 6 -O-, -OC 4 H 8 -O-, - OC 5 H 10 -O-, -O-CH 2 -C(CH 3 ) 2 -CH 2 -O-, -C(CH 3 ) 2 -, -C(CF 3 ) 2 - or -SO 2 -, n 3 independently represents an integer of 1 to 4, and n 4 independently represents an integer of 0 to 4, but in formula (C3), the linking group A' does not contain -CH 2 -, -C(CH 3 ) 2 -, In the case of -C(CF 3 ) 2 - or -SO 2 -, any one of n 4 is 1 or more. Wherein, in the case of n 3 =0, the two amine groups in the formula (C1) are not in the para position. Here, the so-called "independently" refers to multiple linking groups A', multiple linking groups X1, and multiple substituents R2 in one or two or more of the formulas (C1) to (C4) above. Or a plurality of n 3 and n 4 may be the same or different. Furthermore, in the formulas (C1) to (C4), the hydrogen atoms in the two terminal amine groups may be substituted, for example, -NR 3 R 4 (here, R 3 and R 4 are independently represents an arbitrary substituent such as an alkyl group).

作為通式(C1)所表示的芳香族二胺,例如可列舉2,6-二胺基-3,5-二乙基甲苯、2,4-二胺基-3,5-二乙基甲苯等。Examples of the aromatic diamine represented by the general formula (C1) include 2,6-diamino-3,5-diethyltoluene, 2,4-diamino-3,5-diethyltoluene Wait.

作為通式(C2)所表示的芳香族二胺,例如可列舉2,4-二胺基-3,3'-二乙基-5,5'-二甲基二苯基甲烷、雙(4-胺基-3-乙基-5-甲基苯基)甲烷等。Examples of the aromatic diamine represented by the general formula (C2) include 2,4-diamino-3,3'-diethyl-5,5'-dimethyldiphenylmethane, bis(4 -Amino-3-ethyl-5-methylphenyl)methane and the like.

作為通式(C3)所表示的芳香族二胺,例如可列舉:1,3-雙[2-(4-胺基苯基)-2-丙基]苯、1,4-雙[2-(4-胺基苯基)-2-丙基]苯、1,4-雙(4-胺基苯氧基)-2,5-二-第三丁基苯等。Examples of the aromatic diamine represented by the general formula (C3) include: 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene, 1,4-bis[2- (4-aminophenyl)-2-propyl]benzene, 1,4-bis(4-aminophenoxy)-2,5-di-tert-butylbenzene, etc.

作為通式(C4)所表示的芳香族二胺,例如可列舉2,2-雙[4-(4-胺基苯氧基)苯基]丙烷等。Examples of the aromatic diamine represented by the general formula (C4) include 2,2-bis[4-(4-aminophenoxy)phenyl]propane and the like.

如上所述,構成第3實施形態的聚醯亞胺膜的非熱塑性聚醯亞胺可以相對於二胺殘基的100莫耳份而於70莫耳份以上、較佳為70莫耳份~90莫耳份的範圍內含有由二胺(A1)所衍生的殘基,且於2莫耳份~15莫耳份的範圍內含有由二胺(C1)~二胺(C4)所衍生的殘基的方式進行控制。As mentioned above, the non-thermoplastic polyimide constituting the polyimide film of the third embodiment may be 70 mole parts or more, preferably 70 mole parts to 100 mole parts of diamine residues. Contains residues derived from diamine (A1) in the range of 90 molar parts, and contains residues derived from diamine (C1) to diamine (C4) in the range of 2 to 15 molar parts Residues are controlled.

第3實施形態中,作為可用作聚醯亞胺的原料的其他二胺,例如可列舉:2,2-雙-[4-(3-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(2-三氟-4-胺基苯氧基)苯基]六氟丙烷、1,4-雙(4-胺基苯氧基)2,3,6-三甲基-苯、1,4-雙(4-胺基苯氧基甲基)丙烷、1,3-雙(4-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)甲烷、1,4-雙(4-胺基苯氧基)乙烷、1,4-雙(4-胺基苯氧基)丙烷、1,4-雙(4-胺基苯氧基)丁烷、1,4-雙(4-胺基苯氧基)戊烷、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)]聯苯、雙[1-(3-胺基苯氧基)]聯苯、雙[4-(3-胺基苯氧基)苯基]甲烷、1,4-雙(4-胺基苯氧基)2-苯基-苯、1,4-雙(2-三氟甲基-4-胺基苯氧基)苯、雙[4-(3-胺基苯氧基)苯基]醚、雙[4-(3-胺基苯氧基)]二苯甲酮、9,9-雙[4-(3-胺基苯氧基)苯基]茀、2,2-雙-[4-(3-胺基苯氧基)苯基]六氟丙烷、3,3'-二甲基-4,4'-二胺基聯苯、4,4'-亞甲基二-鄰甲苯胺、4,4'-亞甲基二-2,6-二甲代苯胺、4,4'-亞甲基-2,6-二乙基苯胺、3,3'-二胺基二苯基乙烷、2-三氟甲基-4,4'-二胺基二苯基醚、2,2'-二-三氟甲基-4,4'-二胺基二苯基醚、3,3'-二胺基聯苯、3,3'-二甲氧基聯苯胺、3,3''-二胺基-對三聯苯、4,4'-[1,4-伸苯基雙(1-甲基亞乙基)]雙苯胺、4,4'-[1,3-伸苯基雙(1-甲基亞乙基)]雙苯胺、雙(對胺基環己基)甲烷、雙(對-β-胺基-第三丁基苯基)醚、雙(對-β-甲基-δ-胺基戊基)苯、對-雙(2-甲基-4-胺基戊基)苯、對-雙(1,1-二甲基-5-胺基戊基)苯、1,5-二胺基萘、2,6-二胺基萘、2,4-雙(β-胺基-第三丁基)甲苯、2,4-二胺基甲苯、間二甲苯-2,5-二胺、對二甲苯-2,5-二胺、間二甲苯二胺、對二甲苯二胺、2,6-二胺基吡啶、2,5-二胺基吡啶、2,5-二胺基-1,3,4-噁二唑、哌嗪、2'-甲氧基-4,4'-二胺基苯甲醯苯胺、4,4'-二胺基苯甲醯苯胺等芳香族二胺化合物。In the third embodiment, examples of other diamines that can be used as raw materials for polyimide include 2,2-bis-[4-(3-aminophenoxy)phenyl]propane, 2, 2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(2-trifluoro-4-aminophenoxy)phenyl]hexafluoropropane , 1,4-bis(4-aminophenoxy)2,3,6-trimethyl-benzene, 1,4-bis(4-aminophenoxymethyl)propane, 1,3-bis (4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1,4-bis(4 -aminophenoxy)methane, 1,4-bis(4-aminophenoxy)ethane, 1,4-bis(4-aminophenoxy)propane, 1,4-bis(4- Aminophenoxy)butane, 1,4-bis(4-aminophenoxy)pentane, bis[4-(3-aminophenoxy)phenyl]pyridine, bis[4-(4 -aminophenoxy)phenyl]pyridine, bis[4-(3-aminophenoxy)]biphenyl, bis[1-(3-aminophenoxy)]biphenyl, bis[4- (3-aminophenoxy)phenyl]methane, 1,4-bis(4-aminophenoxy)2-phenyl-benzene, 1,4-bis(2-trifluoromethyl-4- Aminophenoxy)benzene, bis[4-(3-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)]benzophenone, 9,9-bis [4-(3-Aminophenoxy)phenyl]fennel, 2,2-bis-[4-(3-aminophenoxy)phenyl]hexafluoropropane, 3,3'-dimethyl -4,4'-diaminobiphenyl, 4,4'-methylenebis-o-toluidine, 4,4'-methylenebis-2,6-xylaniline, 4,4'- Methylene-2,6-diethylaniline, 3,3'-diaminodiphenylethane, 2-trifluoromethyl-4,4'-diaminodiphenylether, 2,2 '-Di-trifluoromethyl-4,4'-diaminodiphenyl ether, 3,3'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 3,3'' -Diamino-terphenyl, 4,4'-[1,4-Phenylbis(1-methylethylene)]bisaniline, 4,4'-[1,3-Phenylbis (1-methylethylene)]bisaniline, bis(p-aminocyclohexyl)methane, bis(p-β-amino-tert-butylphenyl)ether, bis(p-β-methyl- δ-aminopentyl)benzene, p-bis(2-methyl-4-aminopentyl)benzene, p-bis(1,1-dimethyl-5-aminopentyl)benzene, 1, 5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis(β-amino-tert-butyl)toluene, 2,4-diaminotoluene, m-xylene-2,5 -diamine, p-xylene-2,5-diamine, m-xylylenediamine, p-xylylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-di Amino-1,3,4-oxadiazole, piperazine, 2'-methoxy-4,4'-diaminobenzamide, 4,4'-diaminobenzamide and other aromatic family of diamine compounds.

第3實施形態中,藉由分別以所述莫耳比使用作為成為聚醯亞胺的原料的酸酐成分的BPDA、TAHQ、PMDA及NTCDA、作為二胺成分的二胺(A1)及二胺(C1)~二胺(C4),可控制由該些原料化合物所衍生的殘基的量,使介電正切及吸濕率的減少、與製造多層膜及金屬張積層板時的發泡抑制併存。In the third embodiment, by using BPDA, TAHQ, PMDA, and NTCDA as an acid anhydride component used as a raw material of polyimide, and diamine (A1) and diamine ( C1) to diamine (C4), the amount of residues derived from these raw material compounds can be controlled, so that the reduction of dielectric tangent and moisture absorption, and the suppression of foaming in the manufacture of multilayer films and metal tension laminates coexist. .

關於第3實施形態的聚醯亞胺膜,由於低介電常數及低介電正切與低吸濕性併存,因此例如作為成為FPC的原料的銅張積層板的絕緣樹脂層中的基質樹脂而較佳。另外,作為成為聚醯亞胺的原料的單體,由於使用芳香族四羧酸酐與芳香族二胺,因此不易產生加熱所引起的尺寸變化的問題,且具有阻燃性,而無需調配阻燃劑。因此,藉由利用第3實施形態的聚醯亞胺膜及使用其的銅張積層板,可實現FPC等電路基板的可靠性與良率的提高。Regarding the polyimide film of the third embodiment, since low dielectric constant and low dielectric tangent and low hygroscopicity coexist, it is used, for example, as a matrix resin in an insulating resin layer of a copper tensioned laminate used as a raw material for FPC. better. In addition, since aromatic tetracarboxylic acid anhydride and aromatic diamine are used as the monomers used as raw materials for polyimide, it is difficult to cause the problem of dimensional change caused by heating, and it has flame retardancy, and there is no need to formulate flame retardant agent. Therefore, by using the polyimide film of the third embodiment and the copper laminated board using the same, it is possible to improve the reliability and yield of circuit boards such as FPC.

第1實施形態、第2實施形態或第3實施形態的非熱塑性聚醯亞胺中,藉由選定所述四羧酸殘基及二胺殘基的種類、或者應用兩種以上的四羧酸殘基或二胺殘基時各自的莫耳比,可控制熱膨脹係數、儲存彈性係數、拉伸彈性係數等。另外,非熱塑性聚醯亞胺中,於具有多個聚醯亞胺的結構單元的情況下,可以嵌段的形式存在,亦可無規存在,但就抑制面內延遲(RO)的偏差的觀點而言,較佳為無規存在。In the non-thermoplastic polyimide of the first embodiment, the second embodiment, or the third embodiment, by selecting the types of the tetracarboxylic acid residues and diamine residues, or using two or more tetracarboxylic acid residues, Residues or diamine residues can control the coefficient of thermal expansion, coefficient of storage elasticity, coefficient of tensile elasticity, etc. by molar ratio of each. In addition, in the case of non-thermoplastic polyimide, in the case of having a plurality of structural units of polyimide, it may exist in the form of a block or randomly, but in order to suppress the deviation of the in-plane retardation (RO) From a viewpoint, random existence is preferable.

再者,第1實施形態或第2實施形態中,藉由將非熱塑性聚醯亞胺中所含的四羧酸殘基及二胺殘基均設為芳香族基,可提高聚醯亞胺膜於高溫環境下的尺寸精度,且減少面內延遲(RO)的變化量,因此較佳。Furthermore, in the first embodiment or the second embodiment, by making both the tetracarboxylic acid residues and the diamine residues contained in the non-thermoplastic polyimide an aromatic group, the polyimide can be improved. The dimensional accuracy of the film in a high-temperature environment and the reduction of the variation of the in-plane retardation (RO) are better.

第1實施形態或第2實施形態中,非熱塑性聚醯亞胺的醯亞胺基濃度較佳為33重量%以下。此處,「醯亞胺基濃度」表示聚醯亞胺中的醯亞胺基部(-(CO) 2-N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過33重量%,則樹脂自身的分子量減小,且因極性基的增加而低吸濕性亦變差。第1實施形態或第2實施形態中,藉由選擇所述酸酐與二胺化合物的組合而控制非熱塑性聚醯亞胺中的分子的配向性,藉此抑制伴隨醯亞胺基濃度下降的CTE的增加,確保低吸濕性。 In the first embodiment or the second embodiment, the imide group concentration of the non-thermoplastic polyimide is preferably 33% by weight or less. Here, the "imide group concentration" means a value obtained by dividing the molecular weight of the imide group (-(CO) 2 -N-) in the polyimide by the molecular weight of the entire structure of the polyimide. If the imide group concentration exceeds 33% by weight, the molecular weight of the resin itself decreases, and the low hygroscopicity also deteriorates due to the increase of polar groups. In the first embodiment or the second embodiment, the alignment of molecules in the non-thermoplastic polyimide is controlled by selecting the combination of the acid anhydride and the diamine compound, thereby suppressing the CTE accompanying the decrease in the concentration of the imide group The increase ensures low moisture absorption.

第1實施形態、第2實施形體或第3實施形態中,非熱塑性聚醯亞胺的重量平均分子量例如較佳為10,000~400,000的範圍內,更佳為50,000~350,000的範圍內。若重量平均分子量未滿10,000,則出現膜的強度下降而容易變脆的傾向。另一方面,若重量平均分子量超過400,000,則出現黏度過度增加且塗敷作業時容易發生膜厚度不均、條紋等不良情況的傾向。In the first embodiment, the second embodiment, or the third embodiment, the weight average molecular weight of the non-thermoplastic polyimide is, for example, preferably within a range of 10,000 to 400,000, more preferably within a range of 50,000 to 350,000. When the weight average molecular weight is less than 10,000, the strength of the film tends to decrease and tend to become brittle. On the other hand, if the weight-average molecular weight exceeds 400,000, the viscosity tends to increase excessively, and defects such as film thickness unevenness and streaks tend to easily occur during coating operations.

<熱塑性聚醯亞胺> 第1實施形態或第2實施形態的聚醯亞胺膜中,構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺為包含四羧酸殘基及二胺殘基者,較佳為包含由芳香族四羧酸二酐所衍生的芳香族四羧酸殘基及芳香族二胺所衍生的芳香族二胺殘基。 <Thermoplastic polyimide> In the polyimide film of the first embodiment or the second embodiment, the thermoplastic polyimide constituting the thermoplastic polyimide layer is one containing tetracarboxylic acid residues and diamine residues, preferably containing aromatic An aromatic tetracarboxylic acid residue derived from an aromatic tetracarboxylic dianhydride and an aromatic diamine residue derived from an aromatic diamine.

(四羧酸殘基) 作為構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺中使用的四羧酸殘基,可使用與所述作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中的四羧酸殘基而例示者相同者。 (tetracarboxylic acid residue) As the tetracarboxylic acid residue used in the thermoplastic polyimide constituting the thermoplastic polyimide layer, the same as the tetracarboxylic acid residue in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer can be used. The bases are the same as those exemplified.

(二胺殘基) 作為構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺中所含的二胺殘基,較佳為由通式(B1)~通式(B7)所表示的二胺化合物所衍生的二胺殘基。 (diamine residue) The diamine residue contained in the thermoplastic polyimide constituting the thermoplastic polyimide layer is preferably a diamine residue derived from a diamine compound represented by general formula (B1) to general formula (B7). base.

[化9]

Figure 02_image001
[chemical 9]
Figure 02_image001

式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數。其中,自式(B3)中去除與式(B2)重複者,自式(B5)中去除與式(B4)重複者。此處,所謂「獨立地」表示所述式(B1)~式(B7)內的一個式或兩個以上式中多個連結基A、多個R 1或多個n 1可相同亦可不同。再者,所述式(B1)~式(B7)中,末端的兩個胺基中的氫原子可經取代,例如亦可為-NR 3R 4(此處,R 3、R 4獨立地表示烷基等任意的取代基)。 In formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or alkoxy group with 1 to 6 carbons, and the linking group A independently represents a group selected from -O-, -S-, -CO-, A divalent group in -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents an integer of 0 to 4 . Among them, the duplicates of formula (B2) are removed from formula (B3), and the duplicates of formula (B4) are removed from formula (B5). Here, the so-called "independently" means that in the formula (B1) to the formula (B7) in one formula or two or more formulas, multiple linking groups A, multiple R 1 or multiple n 1 may be the same or different . Furthermore, in the formulas (B1) to (B7), the hydrogen atoms in the two terminal amine groups may be substituted, for example, -NR 3 R 4 (here, R 3 and R 4 are independently represents an arbitrary substituent such as an alkyl group).

式(B1)所表示的二胺(以下,有時表述為「二胺(B1)」)是具有兩個苯環的芳香族二胺。認為所述二胺(B1)藉由直接鍵結於至少一個苯環上的胺基與二價連結基A處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B1),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-、-CH 2-、-C(CH 3) 2-、-CO-、-SO 2-、-S-。 The diamine represented by formula (B1) (hereinafter, sometimes referred to as "diamine (B1)") is an aromatic diamine having two benzene rings. It is considered that the diamine (B1) is in the meta-position between the amine group directly bonded to at least one benzene ring and the divalent linking group A, and the polyimide molecular chain has increased degrees of freedom and high flexibility, Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B1), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-, -CH 2 -, -C(CH 3 ) 2 -, -CO-, -SO 2 -, -S-.

作為二胺(B1),例如可列舉:3,3'-二胺基二苯基甲烷、3,3'-二胺基二苯基丙烷、3,3'-二胺基二苯基硫醚、3,3'-二胺基二苯基碸、3,3'-二胺基二苯基醚、3,4'-二胺基二苯基醚、3,4'-二胺基二苯基甲烷、3,4'-二胺基二苯基丙烷、3,4'-二胺基二苯基硫醚、3,3'-二胺基二苯甲酮、(3,3'-雙胺基)二苯基胺等。Examples of the diamine (B1) include: 3,3'-diaminodiphenylmethane, 3,3'-diaminodiphenylpropane, 3,3'-diaminodiphenylsulfide , 3,3'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl Methane, 3,4'-diaminodiphenylpropane, 3,4'-diaminodiphenylsulfide, 3,3'-diaminobenzophenone, (3,3'-bis Amino) diphenylamine, etc.

式(B2)所表示的二胺(以下,有時表述為「二胺(B2)」)是具有三個苯環的芳香族二胺。認為所述二胺(B2)藉由直接鍵結於至少一個苯環上的胺基與二價連結基A處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B2),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。The diamine represented by the formula (B2) (hereinafter, may be referred to as “diamine (B2)”) is an aromatic diamine having three benzene rings. It is considered that the diamine (B2) is in the meta-position between the amine group directly bonded to at least one benzene ring and the divalent linking group A, and the polyimide molecular chain has increased degrees of freedom and high flexibility, Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B2), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-.

作為二胺(B2),例如可列舉:1,4-雙(3-胺基苯氧基)苯、3-[4-(4-胺基苯氧基)苯氧基]苯胺、3-[3-(4-胺基苯氧基)苯氧基]苯胺等。Examples of diamines (B2) include: 1,4-bis(3-aminophenoxy)benzene, 3-[4-(4-aminophenoxy)phenoxy]aniline, 3-[ 3-(4-Aminophenoxy)phenoxy]aniline, etc.

式(B3)所表示的二胺(以下,有時表述為「二胺(B3)」)是具有三個苯環的芳香族二胺。認為所述二胺(B3)藉由直接鍵結於一個苯環上的兩個二價連結基A彼此處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B3),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。The diamine represented by the formula (B3) (hereinafter, sometimes referred to as "diamine (B3)") is an aromatic diamine having three benzene rings. It is considered that the diamine (B3) is in the meta-position to each other through the two divalent linking groups A directly bonded to a benzene ring, and the polyimide molecular chain has an increased degree of freedom and high flexibility. Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B3), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-.

作為二胺(B3),例如可列舉:1,3-雙(4-胺基苯氧基)苯(1,3-Bis(4-aminophenoxy)benzene,TPE-R)、1,3-雙(3-胺基苯氧基)苯(1,3-Bis(3-aminophenoxy)benzene,APB)、4,4'-[2-甲基-(1,3-伸苯基)雙氧基]雙苯胺、4,4'-[4-甲基-(1,3-伸苯基)雙氧基]雙苯胺、4,4'-[5-甲基-(1,3-伸苯基)雙氧基]雙苯胺等。Examples of the diamine (B3) include: 1,3-bis(4-aminophenoxy)benzene (1,3-Bis(4-aminophenoxy)benzene, TPE-R), 1,3-bis( 3-aminophenoxy)benzene (1,3-Bis(3-aminophenoxy)benzene, APB), 4,4'-[2-methyl-(1,3-phenylene)dioxy]bis Aniline, 4,4'-[4-methyl-(1,3-phenylene)dioxy]bisaniline, 4,4'-[5-methyl-(1,3-phenylene)bis Oxygen] dianiline, etc.

式(B4)所表示的二胺(以下,有時表述為「二胺(B4)」)是具有四個苯環的芳香族二胺。認為所述二胺(B4)藉由直接鍵結於至少一個苯環上的胺基與二價連結基A處於間位,而具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B4),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-、-CH 2-、-C(CH 3) 2-、-SO 2-、-CO-、-CONH-。 The diamine represented by the formula (B4) (hereinafter, may be referred to as "diamine (B4)") is an aromatic diamine having four benzene rings. It is believed that the diamine (B4) has high flexibility due to the fact that the amine group directly bonded to at least one benzene ring is in the meta-position with the divalent linking group A, which contributes to the flexibility of the polyimide molecular chain improvement. Therefore, by using diamine (B4), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 -, -CO-, -CONH-.

作為二胺(B4),可列舉:雙[4-(3-胺基苯氧基)苯基]甲烷、雙[4-(3-胺基苯氧基)苯基]丙烷、雙[4-(3-胺基苯氧基)苯基]醚、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)]二苯甲酮、雙[4,4'-(3-胺基苯氧基)]苯甲醯苯胺等。Examples of the diamine (B4) include: bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]propane, bis[4- (3-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]phenone, bis[4-(3-aminophenoxy)]benzophenone , Bis[4,4'-(3-aminophenoxy)]benzylaniline, etc.

式(B5)所表示的二胺(以下,有時表述為「二胺(B5)」)是具有四個苯環的芳香族二胺。認為所述二胺(B5)藉由直接鍵結於至少一個苯環上的兩個二價連結基A彼此處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B5),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。The diamine represented by the formula (B5) (hereinafter, may be referred to as "diamine (B5)") is an aromatic diamine having four benzene rings. It is considered that the diamine (B5) is in the meta-position with two divalent linking groups A directly bonded to at least one benzene ring, and the polyimide molecular chain has increased degrees of freedom and high flexibility, Contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B5), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-.

作為二胺(B5),可列舉4-[3-[4-(4-胺基苯氧基)苯氧基]苯氧基]苯胺、4,4'-[氧基雙(3,1-伸苯氧基)]雙苯胺等。Examples of the diamine (B5) include 4-[3-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline, 4,4'-[oxybis(3,1- Extended phenoxy)] dianiline, etc.

式(B6)所表示的二胺(以下,有時表述為「二胺(B6)」)是具有四個苯環的芳香族二胺。認為所述二胺(B6)藉由具有至少兩個醚鍵而具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B6),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-C(CH 3) 2-、-O-、-SO 2-、-CO-。 The diamine represented by the formula (B6) (hereinafter, may be referred to as "diamine (B6)") is an aromatic diamine having four benzene rings. It is considered that the diamine (B6) has high flexibility by having at least two ether bonds, and contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B6), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -C(CH 3 ) 2 -, -O-, -SO 2 -, -CO-.

作為二胺(B6),例如可列舉:2,2-雙[4-(4-胺基苯氧基)苯基]丙烷(2,2-Bis[4-(4-aminophenoxy)phenyl]propane,BAPP)、雙[4-(4-胺基苯氧基)苯基]醚(Bis[4-(4-aminophenoxy)phenyl]ether,BAPE)、雙[4-(4-胺基苯氧基)苯基]碸(Bis[4-(4-aminophenoxy)phenyl]sulfone,BAPS)、雙[4-(4-胺基苯氧基)苯基]酮(Bis[4-(4-aminophenoxy)phenyl]ketone,BAPK)等。Examples of diamines (B6) include 2,2-bis[4-(4-aminophenoxy)phenyl]propane (2,2-Bis[4-(4-aminophenoxy)phenyl]propane, BAPP), bis[4-(4-aminophenoxy)phenyl]ether (Bis[4-(4-aminophenoxy)phenyl]ether, BAPE), bis[4-(4-aminophenoxy) Phenyl]sulfone (Bis[4-(4-aminophenoxy)phenyl]sulfone, BAPS), bis[4-(4-aminophenoxy)phenyl]ketone (Bis[4-(4-aminophenoxy)phenyl] ketone, BAPK), etc.

式(B7)所表示的二胺(以下,有時表述為「二胺(B7)」)是具有四個苯環的芳香族二胺。所述二胺(B7)於二苯基骨架的兩側分別具有彎曲性高的二價連結基A,因此認為有助於聚醯亞胺分子鏈的柔軟性的提高。因此,藉由使用二胺(B7),聚醯亞胺的熱塑性提高。此處,作為連結基A,較佳為-O-。The diamine represented by formula (B7) (hereinafter, sometimes referred to as "diamine (B7)") is an aromatic diamine having four benzene rings. Since the diamine (B7) has a highly flexible divalent linking group A on both sides of the diphenyl skeleton, it is considered that it contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B7), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-.

作為二胺(B7),例如可列舉雙[4-(3-胺基苯氧基)]聯苯、雙[4-(4-胺基苯氧基)]聯苯等。Examples of diamine (B7) include bis[4-(3-aminophenoxy)]biphenyl, bis[4-(4-aminophenoxy)]biphenyl, and the like.

第1實施形態或第2實施形態中,構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺相對於二胺殘基的100莫耳份,於70莫耳份以上、較佳為70莫耳份以上且99莫耳份以下的範圍內、更佳為80莫耳份以上且95莫耳份以下的範圍內含有由選自二胺(B1)~二胺(B7)中的至少一種二胺化合物所衍生的二胺殘基。二胺(B1)~二胺(B7)含有具有彎曲性的分子結構,因此藉由以所述範圍內的量來使用選自該些化合物中的至少一種二胺化合物,可提高聚醯亞胺分子鏈的柔軟性,且賦予熱塑性。若二胺(B1)~二胺(B7)的合計量相對於所有二胺成分的100莫耳份而未滿70莫耳份,則聚醯亞胺樹脂的柔軟性不足而無法獲得充分的熱塑性。In the first embodiment or the second embodiment, the amount of thermoplastic polyimide constituting the thermoplastic polyimide layer is 70 mole parts or more, preferably 70 mole parts relative to 100 mole parts of diamine residues. Contains at least one diamine compound selected from diamine (B1) to diamine (B7) within the range of 99 mol parts or more, more preferably 80 mol parts or more and 95 mol parts or less Derivatized diamine residues. Diamine (B1) to diamine (B7) have a flexible molecular structure, so by using at least one diamine compound selected from these compounds in an amount within the above-mentioned range, the polyimide can be improved. Molecular chain flexibility, and impart thermoplasticity. If the total amount of diamine (B1) to diamine (B7) is less than 70 mol parts with respect to 100 mol parts of all diamine components, the flexibility of the polyimide resin is insufficient and sufficient thermoplasticity cannot be obtained. .

另外,作為構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺中所含的二胺殘基,亦較佳為由通式(A1)表示的二胺化合物所衍生的二胺殘基。關於式(A1)表示的二胺化合物[二胺(A1)],如在非熱塑性聚醯亞胺的說明中所述般。二胺(A1)具有剛直結構,且具有對聚合物整體賦予有序結構的作用,因此可藉由抑制分子的運動而使介電正切或吸濕性下降。進而,藉由用作熱塑性聚醯亞胺的原料,可獲得透氣性低、長期耐熱接著性優異的聚醯亞胺。Moreover, as a diamine residue contained in the thermoplastic polyimide which comprises a thermoplastic polyimide layer, the diamine residue derived from the diamine compound represented by General formula (A1) is also preferable. The diamine compound [diamine (A1)] represented by the formula (A1) is as described in the description of the non-thermoplastic polyimide. Diamine (A1) has a rigid structure and has the effect of imparting an ordered structure to the entire polymer, so it can reduce the dielectric tangent or hygroscopicity by inhibiting the movement of molecules. Furthermore, by using it as a raw material for thermoplastic polyimide, polyimide having low air permeability and excellent long-term heat-resistant adhesion can be obtained.

第1實施形態或第2實施形態中,構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺可於較佳為1莫耳份以上且30莫耳份以下的範圍內、更佳為5莫耳份以上且20莫耳份以下的範圍內含有由二胺(A1)所衍生的二胺殘基。藉由以所述範圍內的量來使用二胺(A1),利用源自單體的剛直結構而聚合物整體形成有序結構,因此可獲得為熱塑性且透氣性及吸濕性低、長期耐熱接著性優異的聚醯亞胺。In the first embodiment or the second embodiment, the amount of thermoplastic polyimide constituting the thermoplastic polyimide layer can be within the range of preferably 1 mole part or more and 30 mole parts or less, more preferably 5 mole parts The diamine residue derived from diamine (A1) is contained in the range of 20 mole parts or more and 20 mole parts or less. By using the diamine (A1) in an amount within the above range, the polymer as a whole forms an ordered structure by utilizing the rigid structure derived from the monomer, so that it is thermoplastic and has low air permeability and hygroscopicity, and long-term heat resistance can be obtained. Polyimide with excellent adhesion.

構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺可於不損及發明的效果的範圍內包含由二胺(A1)、二胺(B1)~二胺(B7)以外的二胺化合物所衍生的二胺殘基。The thermoplastic polyimide constituting the thermoplastic polyimide layer may include those derived from diamine compounds other than diamine (A1), diamine (B1) to diamine (B7) within the range that does not impair the effect of the invention. of diamine residues.

熱塑性聚醯亞胺中,藉由選定所述四羧酸殘基及二胺殘基的種類、或者應用兩種以上的四羧酸殘基或二胺殘基時各自的莫耳比,可控制熱膨脹係數、拉伸彈性係數、玻璃轉移溫度等。另外,熱塑性聚醯亞胺中,於具有多個聚醯亞胺的結構單元的情況下,可以嵌段的形式存在,亦可無規存在,但較佳為無規存在。In thermoplastic polyimides, by selecting the types of the tetracarboxylic acid residues and diamine residues, or the respective molar ratios when two or more tetracarboxylic acid residues or diamine residues are used, it is possible to control Coefficient of thermal expansion, tensile modulus of elasticity, glass transition temperature, etc. In addition, in thermoplastic polyimide, when having a plurality of structural units of polyimide, it may exist in the form of a block or may exist randomly, but it is preferably present randomly.

再者,第1實施形態或第2實施形態中,藉由將熱塑性聚醯亞胺中所含的四羧酸殘基及二胺殘基均設為芳香族基,可提高聚醯亞胺膜於高溫環境下的尺寸精度,且抑制面內延遲(RO)的變化量。Furthermore, in the first embodiment or the second embodiment, by making both the tetracarboxylic acid residue and the diamine residue contained in the thermoplastic polyimide an aromatic group, the polyimide film can be improved. Dimensional accuracy in high temperature environment, and suppress the variation of in-plane retardation (RO).

熱塑性聚醯亞胺的醯亞胺基濃度較佳為33重量%以下。此處,「醯亞胺基濃度」表示聚醯亞胺中的醯亞胺基部(-(CO) 2-N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過33重量%,則樹脂自身的分子量減小,且因極性基的增加而低吸濕性亦變差。第1實施形態或第2實施形態中,藉由選擇所述二胺化合物的組合而控制熱塑性聚醯亞胺中的分子的配向性,藉此抑制伴隨醯亞胺基濃度下降的CTE的增加,確保低吸濕性。 The imide group concentration of the thermoplastic polyimide is preferably 33% by weight or less. Here, the "imide group concentration" means a value obtained by dividing the molecular weight of the imide group (-(CO) 2 -N-) in the polyimide by the molecular weight of the entire structure of the polyimide. If the imide group concentration exceeds 33% by weight, the molecular weight of the resin itself decreases, and the low hygroscopicity also deteriorates due to the increase of polar groups. In the first embodiment or the second embodiment, by selecting the combination of the above-mentioned diamine compounds, the orientation of molecules in the thermoplastic polyimide is controlled, thereby suppressing an increase in CTE accompanying a decrease in the concentration of imide groups, Ensure low moisture absorption.

熱塑性聚醯亞胺的重量平均分子量例如較佳為10,000~400,000的範圍內,更佳為50,000~350,000的範圍內。若重量平均分子量未滿10,000,則出現膜的強度下降而容易變脆的傾向。另一方面,若重量平均分子量超過400,000,則出現黏度過度增加且塗敷作業時容易發生膜厚度不均、條紋等不良情況的傾向。The weight average molecular weight of the thermoplastic polyimide is, for example, preferably within a range of 10,000 to 400,000, more preferably within a range of 50,000 to 350,000. When the weight average molecular weight is less than 10,000, the strength of the film tends to decrease and tend to become brittle. On the other hand, if the weight-average molecular weight exceeds 400,000, the viscosity tends to increase excessively, and defects such as film thickness unevenness and streaks tend to easily occur during coating operations.

第1實施形態或第2實施形態的聚醯亞胺膜中,構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺可使與銅箔的密接性提高。所述熱塑性聚醯亞胺的玻璃轉移溫度為200℃以上且350℃以下的範圍內,較佳為200℃以上且320℃以下的範圍內。In the polyimide film of the first embodiment or the second embodiment, the thermoplastic polyimide constituting the thermoplastic polyimide layer can improve the adhesiveness with the copper foil. The glass transition temperature of the thermoplastic polyimide is in the range of not less than 200°C and not more than 350°C, preferably not less than 200°C and not more than 320°C.

構成熱塑性聚醯亞胺層的熱塑性聚醯亞胺例如成為電路基板的絕緣樹脂中的接著層,因此為了抑制銅的擴散,最佳為完全經醯亞胺化的結構。其中,聚醯亞胺的一部分亦可成為醯胺酸。所述醯亞胺化率是使用傅立葉轉換紅外分光光度計(市售品:日本分光製造的FT/IR620),並利用一次反射衰減全反射(Attenuated Total Reflectance,ATR)法測定聚醯亞胺薄膜的紅外線吸收光譜,藉此以1015 cm -1附近的苯環吸收體為基準,根據源自1780 cm -1的醯亞胺基的C=O伸縮的吸光度而算出。 The thermoplastic polyimide constituting the thermoplastic polyimide layer is, for example, an adhesive layer in an insulating resin of a circuit board. Therefore, in order to suppress diffusion of copper, a completely imidized structure is preferable. Among them, a part of the polyimide may also be an amide acid. The imidization rate is measured using a Fourier transform infrared spectrophotometer (commercially available: FT/IR620 manufactured by JASCO) and using a once-reflection attenuated total reflectance (Attenuated Total Reflectance, ATR) method to measure the polyimide film. The infrared absorption spectrum of , based on the benzene ring absorber around 1015 cm -1 , was calculated from the absorbance derived from the C=O stretching of the imide group at 1780 cm -1 .

<聚醯亞胺膜的形態> 第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜只要為滿足所述條件者,則並無特別限定,可為包含絕緣樹脂的膜(片),亦可為積層於銅箔、玻璃板、聚醯亞胺系膜、聚醯胺系膜、聚酯系膜等的樹脂片等的基材上的狀態下的絕緣樹脂的膜。 <Morphology of polyimide film> The polyimide film of the first embodiment, the second embodiment, or the third embodiment is not particularly limited as long as it satisfies the above conditions, and may be a film (sheet) made of an insulating resin, or may be laminated on A film of an insulating resin in a state on a substrate such as a resin sheet such as a copper foil, a glass plate, a polyimide film, a polyamide film, or a polyester film.

<厚度> 第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜的厚度可根據所使用的目的而設定為規定範圍內的厚度。聚醯亞胺膜的厚度例如較佳為8 μm~50 μm的範圍內,更佳為11 μm~26 μm的範圍內。若聚醯亞胺膜的厚度小於所述下限值,則有時會產生無法確保電絕緣性、或者因處理(handling)性的下降而於製造步驟中操作變得困難等問題。另一方面,若聚醯亞胺膜的厚度超過所述上限值,則例如需要對用以控制面內延遲(RO)的製造條件進行高精度控制,而產生生產性下降等不良狀況。 <Thickness> The thickness of the polyimide film of the first embodiment, the second embodiment, or the third embodiment can be set to a thickness within a predetermined range according to the purpose of use. The thickness of the polyimide film is, for example, preferably within a range of 8 μm to 50 μm, more preferably within a range of 11 μm to 26 μm. When the thickness of the polyimide film is less than the lower limit, electrical insulation may not be ensured, or handling may become difficult due to a reduction in handling properties. On the other hand, if the thickness of the polyimide film exceeds the above-mentioned upper limit, for example, it is necessary to control the production conditions for controlling the in-plane retardation (RO) with high precision, which causes problems such as a decrease in productivity.

另外,第1實施形態或第2實施形態的聚醯亞胺膜中,非熱塑性聚醯亞胺層與熱塑性聚醯亞胺層的厚度比(非熱塑性聚醯亞胺層/熱塑性聚醯亞胺層)可為1.5~6.0的範圍內。若所述比的值小於1.5,則非熱塑性聚醯亞胺層相對於聚醯亞胺膜整體變薄,因此面內延遲(RO)的偏差容易變大,若超過6.0,則熱塑性聚醯亞胺層變薄,因此聚醯亞胺膜與銅箔的接著可靠性容易下降。所述面內延遲(RO)的控制與構成聚醯亞胺膜的各聚醯亞胺層的樹脂構成及其厚度相關。關於作為賦予接著性即高熱膨脹性或軟化的樹脂構成的熱塑性聚醯亞胺層,其厚度越大,越會對聚醯亞胺膜的RO的值造成顯著影響,因此使非熱塑性聚醯亞胺層的厚度的比率增大,且減小熱塑性聚醯亞胺層的厚度的比率,並減小聚醯亞胺膜的RO的值與其偏差。In addition, in the polyimide film of the first embodiment or the second embodiment, the thickness ratio of the non-thermoplastic polyimide layer to the thermoplastic polyimide layer (non-thermoplastic polyimide layer/thermoplastic polyimide layer) can be in the range of 1.5 to 6.0. If the value of the ratio is less than 1.5, the non-thermoplastic polyimide layer becomes thinner relative to the entire polyimide film, so the deviation of the in-plane retardation (RO) tends to become large. If it exceeds 6.0, the thermoplastic polyimide layer becomes thinner. Since the amine layer becomes thinner, the bonding reliability between the polyimide film and the copper foil tends to decrease. The control of the in-plane retardation (RO) is related to the resin composition and thickness of each polyimide layer constituting the polyimide film. With regard to the thermoplastic polyimide layer composed of a resin that imparts adhesiveness, that is, has high thermal expansion or softening, the greater its thickness, the more it will significantly affect the RO value of the polyimide film. Therefore, the non-thermoplastic polyimide The ratio of the thickness of the amine layer is increased, and the ratio of the thickness of the thermoplastic polyimide layer is decreased, and the value of RO of the polyimide film is reduced from its deviation.

<膜寬> 第2實施形態中,就更顯著地顯現出聚醯亞胺膜的尺寸精度的改善效果的觀點而言,聚醯亞胺膜較佳為膜寬為490 mm以上且1100 mm以下的範圍內、長條狀的長度為20 m以上者。於連續製造第2實施形態的聚醯亞胺膜的情況下,寬度方向(以下,亦稱為TD方向)越廣的膜,發明的效果越變得特別顯著。再者,於連續製造第2實施形態的聚醯亞胺膜的情況下,將長條的聚醯亞胺膜的長邊方向稱為MD方向。 <Film width> In the second embodiment, the polyimide film preferably has a film width of 490 mm to 1100 mm, Long strips with a length of 20 m or more. In the case of continuously producing the polyimide film according to the second embodiment, the effect of the invention becomes particularly remarkable as the film is wider in the width direction (hereinafter also referred to as the TD direction). In addition, when manufacturing the polyimide film of 2nd Embodiment continuously, the longitudinal direction of the long polyimide film is called MD direction.

<面內延遲(RO)> 關於第2實施形態的聚醯亞胺膜,面內延遲(RO)的值為5 nm以上且50 nm以下的範圍內,較佳為5 nm以上且20 nm以下的範圍內,更佳為5 nm以上且15 nm以下的範圍內。另外,TD方向的RO的偏差(ΔRO)為10 nm以下,較佳為5 nm以下,更佳為3 nm以下,由於控制為所述範圍內,因此尤其即便為厚度25 μm以上的膜,尺寸精度亦高。 <Retardation in plane (RO)> Regarding the polyimide film according to the second embodiment, the in-plane retardation (RO) value is within the range of 5 nm to 50 nm, preferably 5 nm to 20 nm, more preferably 5 nm. nm to 15 nm or less. In addition, the RO deviation (ΔRO) in the TD direction is 10 nm or less, preferably 5 nm or less, and more preferably 3 nm or less. Since it is controlled within the above range, especially even for a film with a thickness of 25 μm or more, the size The precision is also high.

第2實施形態的聚醯亞胺膜於溫度320℃的環境下、壓力340 MPa/m 2、保持時間15分鐘的加壓前後的面內延遲(RO)的變化量為20 nm以下,較佳為10 nm以下,更佳為5 nm以下。第2實施形態的聚醯亞胺膜即便為超過構成熱塑性聚醯亞胺層的聚醯亞胺的玻璃轉移溫度的溫度,RO的變化量亦被控制為所述上限值以下,例如於藉由熱層壓將第2實施形態的聚醯亞胺膜與銅箔貼合的步驟的前後,RO亦不易發生變化,因此成為尺寸穩定性優異的聚醯亞胺膜。 The polyimide film according to the second embodiment preferably has an in-plane retardation (RO) change of 20 nm or less before and after pressurization at a pressure of 340 MPa/m 2 and a holding time of 15 minutes in an environment of a temperature of 320°C. 10 nm or less, more preferably 5 nm or less. Even if the polyimide film of the second embodiment is at a temperature exceeding the glass transition temperature of the polyimide constituting the thermoplastic polyimide layer, the amount of change in RO is controlled to be below the upper limit. Before and after the step of bonding the polyimide film and the copper foil according to the second embodiment by thermal lamination, RO hardly changes, so it becomes a polyimide film excellent in dimensional stability.

<熱膨脹係數> 第1實施形態或第2實施形態的聚醯亞胺膜例如於作為電路基板的絕緣層而應用的情況下,為了防止翹曲的發生或尺寸穩定性的下降,如所述條件(a-iii)或條件(b-i)規定般,重要的是膜整體的熱膨脹係數(CTE)為10 ppm/K以上且30 ppm/K以下的範圍內,較佳為10 ppm/K以上且25 ppm/K以下的範圍內,更佳為10 ppm/K~20 ppm/K的範圍內。若CTE未滿10 ppm/K、或者超過30 ppm/K,則會發生翹曲,或者尺寸穩定性下降。另外,關於第3實施形態的聚醯亞胺膜的熱膨脹係數(CTE),亦與第1實施形態或第2實施形態相同。 <Coefficient of thermal expansion> When the polyimide film of the first embodiment or the second embodiment is used, for example, as an insulating layer of a circuit board, in order to prevent the generation of warpage or the decline of dimensional stability, the conditions (a-iii) ) or condition (b-i), it is important that the coefficient of thermal expansion (CTE) of the film as a whole is in the range of 10 ppm/K to 30 ppm/K, preferably 10 ppm/K to 25 ppm/K In the range of, more preferably in the range of 10 ppm/K~20 ppm/K. When the CTE is less than 10 ppm/K or exceeds 30 ppm/K, warping occurs or dimensional stability decreases. In addition, the coefficient of thermal expansion (CTE) of the polyimide film of 3rd Embodiment is also the same as 1st Embodiment or 2nd Embodiment.

<介電正切> 第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜例如如所述條件(a-iv)或條件(c-iii)規定般,例如於作為電路基板的絕緣層而應用的情況下,為了確保阻抗匹配性,作為絕緣層整體,於藉由分離介電質共振器(分離介質諧振器(split post dielectric resonator,SPDR))進行測定時的10 GHz下的介電正切(Tanδ)可為0.004以下、更佳為0.001以上且0.004以下的範圍內、進而佳為0.002以上且0.003以下的範圍內。為了改善電路基板的介電特性,尤其重要的是控制絕緣層的介電正切,藉由將介電正切設為所述範圍內,而增大使傳輸損失下降的效果。因此,於將聚醯亞胺膜例如作為高頻電路基板的絕緣層而應用的情況下,可效率良好地減少傳輸損失。若絕緣層的10 GHz下的介電正切超過0.004,則於用於FPC等電路基板中時,於高頻信號的傳輸路徑上容易產生電信號的損失等不良情況。絕緣層的10 GHz下的介電正切的下限值並無特別限制,但考慮到將聚醯亞胺作為電路基板的絕緣層而應用時的物性控制。 <Dielectric tangent> The polyimide film of the first embodiment, the second embodiment, or the third embodiment is applied, for example, as an insulating layer of a circuit board as specified in the above-mentioned condition (a-iv) or condition (c-iii). In the case of , in order to ensure impedance matching, the dielectric tangent ( Tanδ) may be 0.004 or less, more preferably 0.001 to 0.004, and still more preferably 0.002 to 0.003. In order to improve the dielectric characteristics of the circuit board, it is particularly important to control the dielectric tangent of the insulating layer, and by setting the dielectric tangent within the above-mentioned range, the effect of reducing the transmission loss is increased. Therefore, when the polyimide film is applied, for example, as an insulating layer of a high-frequency circuit board, transmission loss can be efficiently reduced. If the dielectric tangent of the insulating layer at 10 GHz exceeds 0.004, when used in circuit boards such as FPC, problems such as loss of electrical signals are likely to occur on the transmission path of high-frequency signals. The lower limit value of the dielectric tangent at 10 GHz of the insulating layer is not particularly limited, but it takes into consideration physical property control when polyimide is applied as an insulating layer of a circuit board.

<介電常數> 第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜例如於作為電路基板的絕緣層而應用的情況下,為了確保阻抗匹配性,作為絕緣層整體,較佳為10 GHz下的介電常數為4.0以下。若絕緣層的10 GHz下的介電常數超過4.0,則於用於FPC等電路基板中時,會導致絕緣層的介電損失的惡化,於高頻信號的傳輸路徑上容易產生電信號的損失等不良情況。 <Dielectric constant> When the polyimide film of the first embodiment, the second embodiment, or the third embodiment is applied, for example, as an insulating layer of a circuit board, in order to ensure impedance matching, as the entire insulating layer, it is preferable to use a frequency of 10 GHz. The lower dielectric constant is 4.0 or less. If the dielectric constant of the insulating layer at 10 GHz exceeds 4.0, when used in circuit boards such as FPC, the dielectric loss of the insulating layer will deteriorate, and electrical signal loss will easily occur on the transmission path of high-frequency signals and other bad situations.

<吸濕率> 關於第1實施形態或第2實施形態的聚醯亞胺膜,為了減少於用於FPC等電路基板時的濕度所帶來的影響,較佳為於23℃、50%RH下的吸濕率為0.7重量%以下。若聚醯亞胺膜的吸濕率超過0.7重量%,則於用於FPC等電路基板中時,容易受到濕度的影響,容易產生高頻信號的傳輸速度的變動等不良情況。即,若聚醯亞胺膜的吸濕率超出所述範圍,則容易吸收介電常數及介電正切高的水,因此導致介電常數及介電正切的上升,容易於高頻信號的傳輸路徑上產生電信號的損失等不良情況。 <Moisture absorption rate> Regarding the polyimide film of the first embodiment or the second embodiment, in order to reduce the influence of humidity when used in circuit boards such as FPC, the moisture absorption rate at 23°C and 50%RH is preferable 0.7% by weight or less. If the moisture absorption rate of the polyimide film exceeds 0.7% by weight, when it is used in circuit boards such as FPC, it is easily affected by humidity, and problems such as fluctuations in the transmission speed of high-frequency signals are likely to occur. That is, if the moisture absorption rate of the polyimide film exceeds the above-mentioned range, it is easy to absorb water with a high dielectric constant and a high dielectric tangent, thus causing an increase in the dielectric constant and a dielectric tangent, and it is easy to transmit high-frequency signals. Unfavorable conditions such as loss of electrical signals on the path.

另外,考慮對聚醯亞胺膜的尺寸穩定性或介電特性的影響,第3實施形態的聚醯亞胺膜較佳為於23℃、50%RH下進行24小時調濕時的吸濕率為0.65重量%以下。若吸濕率超過0.65重量%,則有時會使聚醯亞胺膜的尺寸穩定性或介電特性惡化。關於吸濕率為0.65重量%以下這一情況,認為聚醯亞胺中的極性基濃度低,且容易形成高分子鏈的有序結構,因此對於尺寸穩定性或介電特性的改善而言較佳。其中,若吸濕率變低,則存在伴隨著高分子鏈的有序結構的形成而霧度(HAZE)值變高的傾向,因此較佳為亦考慮後述的霧度值。In addition, considering the influence on the dimensional stability and dielectric properties of the polyimide film, the polyimide film of the third embodiment is preferably moisture-absorbing when the humidity is adjusted for 24 hours at 23°C and 50%RH. The rate is 0.65% by weight or less. When the moisture absorption rate exceeds 0.65% by weight, the dimensional stability and dielectric properties of the polyimide film may deteriorate. Regarding the fact that the moisture absorption rate is 0.65% by weight or less, it is considered that the concentration of polar groups in polyimide is low, and it is easy to form an ordered structure of polymer chains, so it is relatively low for the improvement of dimensional stability or dielectric properties. good. However, since the haze value tends to become high with formation of the ordered structure of a polymer chain as a moisture absorption rate becomes low, it is preferable to also consider the haze value mentioned later.

<拉伸彈性係數> 另外,第2實施形態的聚醯亞胺膜的拉伸彈性係數較佳為3.0 GPa~10.0 GPa的範圍內,可為4.5 GPa~8.0 GPa的範圍內。若聚醯亞胺膜的拉伸彈性係數小於3.0 GPa,則有時由於聚醯亞胺自身的強度下降而於將銅張積層板加工為電路基板時產生膜的破裂等處理上的問題。反之,若聚醯亞胺膜的拉伸彈性係數超過10.0 GPa,則相對於銅張積層板的彎折的剛性上升,結果於將銅張積層板彎折時施加至銅配線的彎曲應力上升,且耐彎折性下降。藉由將聚醯亞胺膜的拉伸彈性係數設為所述範圍內,而確保聚醯亞胺膜的強度與柔軟性。 <Modulus of Tensile Elasticity> In addition, the tensile modulus of the polyimide film according to the second embodiment is preferably within a range of 3.0 GPa to 10.0 GPa, and may be within a range of 4.5 GPa to 8.0 GPa. If the tensile modulus of the polyimide film is less than 3.0 GPa, the strength of the polyimide itself decreases, which may cause handling problems such as cracking of the film when the copper tension laminate is processed into a circuit board. Conversely, when the tensile modulus of the polyimide film exceeds 10.0 GPa, the rigidity against bending of the copper tension laminate increases, and as a result, the bending stress applied to the copper wiring when the copper tension laminate is bent increases, And the bending resistance is reduced. By setting the tensile modulus of the polyimide film within the above range, the strength and flexibility of the polyimide film can be ensured.

<玻璃轉移溫度> 第3實施形態的聚醯亞胺膜如所述條件(c-ii)規定般玻璃轉移溫度為300℃以上。若玻璃轉移溫度未滿300℃,則於製造使用了第3實施形態的聚醯亞胺膜的覆銅板(copper-clad plate,CCL)或FPC時,容易產生膜的膨脹或自配線的剝離等問題。另一方面,藉由將玻璃轉移溫度設為300℃以上,聚醯亞胺膜的焊料耐熱性或尺寸穩定性提高。 <Glass transition temperature> The polyimide film of the third embodiment has a glass transition temperature of 300° C. or higher as specified in the condition (c-ii). If the glass transition temperature is less than 300°C, expansion of the film or peeling from the wiring is likely to occur when manufacturing a copper-clad plate (CCL) or FPC using the polyimide film of the third embodiment. question. On the other hand, the solder heat resistance and dimensional stability of a polyimide film improve by making a glass transition temperature 300 degreeC or more.

<霧度值> 另外,第3實施形態的聚醯亞胺膜較佳為於加工為如下的厚度為25 μm的聚醯亞胺膜時,基於日本工業標準(Japanese Industrial Standards,JIS)K 7136的霧度(HAZE)值為62%~75%的範圍內,所述聚醯亞胺膜是藉由蝕刻去除將作為聚醯亞胺的前驅物的聚醯胺酸的溶液塗敷於十點平均粗糙度(Rz)為0.6 μm的銅箔上並進行醯亞胺化而形成的積層板的所述銅箔而獲得。若霧度值超過75%,則經由第3實施形態的聚醯亞胺膜的視認性變低。因此,於對使用聚醯亞胺膜而獲得的銅張積層板(CCL)的光微影步驟、或者使用該CCL的FPC(撓性印刷基板)安裝的過程中,有設置於CCL上的對準標記的視認性下降,且與對準標記的位置對準變得困難,實用性下降的情況。另一方面,若霧度值低於62%,則視認性變高,未推進聚醯亞胺高分子鏈的有序結構的形成,因此有吸濕特性或介電特性受損之虞。第3實施形態中,為了使有序結構的形成所帶來的低介電正切化及低吸濕率化、與視認性的維持併存,將霧度值的較佳值設為62%~75%的範圍內。 <Haze value> In addition, when the polyimide film of the third embodiment is processed into a polyimide film having a thickness of 25 μm as follows, the haze (HAZE) based on Japanese Industrial Standards (Japanese Industrial Standards, JIS) K 7136 ) value in the range of 62% to 75%, the polyimide film is removed by etching. A solution of polyamic acid as a precursor of polyimide is applied to the ten-point average roughness (Rz ) is obtained from the copper foil of a laminate formed by imidization on a copper foil of 0.6 μm. When the haze value exceeds 75%, the visibility through the polyimide film of the third embodiment decreases. Therefore, in the process of photolithography of a copper laminate (CCL) obtained using a polyimide film, or in the process of mounting an FPC (flexible printed circuit board) using the CCL, there are counter parts placed on the CCL. When the visibility of the alignment mark is lowered, alignment with the alignment mark becomes difficult, and practicality is reduced. On the other hand, if the haze value is less than 62%, the visibility becomes high and the formation of an ordered structure of polyimide polymer chains does not advance, which may impair hygroscopic properties or dielectric properties. In the third embodiment, in order to achieve low dielectric tangent and low moisture absorption due to the formation of the ordered structure, and maintain visibility, the preferred value of the haze value is set to 62% to 75%. %In the range.

<膜伸長率> 第3實施形態的聚醯亞胺膜較佳為膜伸長率為30%以上。於將第3實施形態的聚醯亞胺膜例如用作FPC的絕緣層時,需要彎折收納於移動設備等框體內的小空間內。所述使用形態中,若膜伸長率低,則成為配線的斷線的原因。因此,關於第3實施形態的聚醯亞胺膜,將較佳的膜伸長率設為30%以上。 <Film elongation> The polyimide film of the third embodiment preferably has a film elongation of 30% or more. When the polyimide film of the third embodiment is used, for example, as an insulating layer of an FPC, it needs to be bent and accommodated in a small space inside a housing of a mobile device or the like. In the above usage form, if the elongation of the film is low, it will cause disconnection of wiring. Therefore, regarding the polyimide film of the third embodiment, a preferable film elongation is set to be 30% or more.

<填料> 第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜亦可視需要於非熱塑性聚醯亞胺層或熱塑性聚醯亞胺層中含有無機填料。具體而言,例如可列舉:二氧化矽、氧化鋁、氧化鎂、氧化鈹、氮化硼、氮化鋁、氮化矽、氟化鋁、氟化鈣等。該些可使用一種或者混合使用兩種以上。 <Filling> The polyimide film of the first embodiment, the second embodiment, or the third embodiment may optionally contain an inorganic filler in the non-thermoplastic polyimide layer or the thermoplastic polyimide layer. Specifically, for example, silicon dioxide, aluminum oxide, magnesium oxide, beryllium oxide, boron nitride, aluminum nitride, silicon nitride, aluminum fluoride, calcium fluoride, etc. are mentioned. These may be used alone or in combination of two or more.

[製造方法] 作為第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜的製造方法的態樣,例如有[1]於在支持基材上塗佈聚醯胺酸溶液並乾燥後,進行醯亞胺化而製造聚醯亞胺膜的方法;[2]於在支持基材上塗佈聚醯胺酸溶液並乾燥後,自支持基材剝離聚醯胺酸的凝膠膜,進行醯亞胺化而製造聚醯亞胺膜的方法。另外,第1實施形態或第2實施形態的聚醯亞胺膜為包含多層聚醯亞胺層的聚醯亞胺膜,因此作為其製造方法的態樣,例如可列舉[3]重複進行多次在支持基材上塗佈聚醯胺酸溶液並乾燥的操作,然後進行醯亞胺化的方法(以下,流延法);[4]於藉由多層擠壓,同時將聚醯胺酸積層為多層的狀態下進行塗佈並乾燥,然後進行醯亞胺化的方法(以下,多層擠壓法)等。關於將第3實施形態的聚醯亞胺膜作為包含多層聚醯亞胺層的多層聚醯亞胺膜中的一層而應用的情況,亦相同。作為將聚醯亞胺溶液(或聚醯胺酸溶液)塗佈於基材上的方法,並無特別限制,例如可利用缺角輪、模具、刮刀、模唇等塗佈機進行塗佈。於形成多層聚醯亞胺層時,較佳為重複進行將聚醯亞胺溶液(或聚醯胺酸溶液)塗佈於基材上並乾燥的操作。 [Production method] As an aspect of the production method of the polyimide film of the first embodiment, the second embodiment, or the third embodiment, for example, there are [1] after coating the polyamide acid solution on the support substrate and drying it, A method for producing a polyimide film by imidization; [2] After coating a polyamic acid solution on a support substrate and drying it, the gel film of the polyamide acid is peeled off from the support substrate, and carried out A method of producing a polyimide film by imidization. In addition, since the polyimide film of the first embodiment or the second embodiment is a polyimide film including a multilayer polyimide layer, as an aspect of its production method, for example, [3] repeating multiple A method in which a polyamic acid solution is coated on a support substrate and dried, and then imidized (hereinafter, casting method); A method in which layers are laminated, coated and dried, followed by imidization (hereinafter, multilayer extrusion method), etc. The same applies to the case where the polyimide film of the third embodiment is applied as one layer of a multilayer polyimide film including a multilayer polyimide layer. The method of coating the polyimide solution (or polyamic acid solution) on the base material is not particularly limited, for example, it can be applied using a coating machine such as a chipped wheel, a mold, a doctor blade, or a die lip. When forming multiple polyimide layers, it is preferable to repeat the operation of applying polyimide solution (or polyamic acid solution) on the substrate and drying.

所述[1]的方法例如可包括下述步驟1a~步驟1c: (1a)於支持基材上塗佈聚醯胺酸溶液並乾燥的步驟; (1b)藉由於支持基材上對聚醯胺酸進行熱處理並進行醯亞胺化而形成聚醯亞胺層的步驟; (1c)藉由將支持基材與聚醯亞胺層分離而獲得聚醯亞胺膜的步驟。 The method of [1] may include, for example, the following steps 1a to 1c: (1a) a step of coating a polyamic acid solution on a support substrate and drying it; (1b) A step of forming a polyimide layer by heat-treating and imidizing polyamic acid on the support substrate; (1c) A step of obtaining a polyimide membrane by separating the support substrate from the polyimide layer.

所述[2]的方法例如可包括下述步驟2a~步驟2c: (2a)於支持基材上塗佈聚醯胺酸溶液並乾燥的步驟; (2b)將支持基材與聚醯胺酸的凝膠膜分離的步驟; (2c)藉由對聚醯胺酸的凝膠膜進行熱處理並進行醯亞胺化而獲得聚醯亞胺膜的步驟。 The method of [2] may include, for example, the following steps 2a to 2c: (2a) a step of coating a polyamide acid solution on a support substrate and drying it; (2b) a step of separating the support substrate from the polyamide gel film; (2c) A step of obtaining a polyimide membrane by heat-treating and imidizing a gel membrane of polyamic acid.

關於所述[3]的方法,除了於所述[1]的方法或[2]的方法中重複進行多次步驟1a或步驟2a而於支持基材上形成聚醯胺酸的積層結構體以外,可與所述[1]的方法或[2]的方法同樣地實施。Regarding the method of [3], in addition to repeating Step 1a or Step 2a multiple times in the method of [1] or [2] to form a laminated structure of polyamic acid on the support substrate , can be implemented in the same manner as the method of [1] or [2].

關於所述[4]的方法,除了於所述[1]的方法的步驟1a或者[2]的方法的步驟2a中藉由多層擠壓並同時塗佈聚醯胺酸的積層結構體且進行乾燥以外,可與所述[1]的方法或[2]的方法同樣地實施。Regarding the method of [4], except that in step 1a of the method of [1] or step 2a of the method of [2], the laminated structure of polyamic acid is coated simultaneously by multi-layer extrusion and Except drying, it can carry out similarly to the method of the said [1] or the method of [2].

第1實施形態、第2實施形態或第3實施形態中製造的聚醯亞胺膜較佳為於支持基材上完成聚醯胺酸的醯亞胺化。由於聚醯胺酸的樹脂層於被固定於支持基材上的狀態下進行醯亞胺化,因此可抑制醯亞胺化過程中的聚醯亞胺層的伸縮變化,維持聚醯亞胺膜的厚度或尺寸精度。另外,於將第3實施形態的聚醯亞胺膜作為包含多層聚醯亞胺層的多層聚醯亞胺膜中的一層而應用的情況下,於自例如120℃至360℃的範圍內的溫度下階段性地進行用以醯亞胺化的熱處理,並且將熱處理時間控制為5分鐘以上、較佳為10分鐘~20分鐘的範圍內,藉此可有效地抑制發泡,防止聚醯亞胺層的膨脹等不良狀況。In the polyimide film produced in the first embodiment, the second embodiment, or the third embodiment, it is preferable that imidization of polyamic acid is completed on a support substrate. Since the resin layer of polyamic acid is imidized while being fixed on the support substrate, the stretching and contraction of the polyimide layer during the imidization process can be suppressed and the polyimide film can be maintained. Thickness or dimensional accuracy. In addition, when the polyimide film of the third embodiment is applied as one layer of a multilayer polyimide film including a multilayer polyimide layer, at a temperature ranging from, for example, 120° C. to 360° C. The heat treatment for imidization is carried out step by step under the temperature, and the heat treatment time is controlled to be more than 5 minutes, preferably in the range of 10 minutes to 20 minutes, so that foaming can be effectively suppressed and polyimidization can be prevented. Defects such as swelling of the amine layer.

關於在支持基材上完成聚醯胺酸的醯亞胺化的聚醯亞胺膜,藉由自支持基材分離聚醯亞胺膜時所施加的對聚醯亞胺膜的張力、或者例如於使用了刀刃等的剝離時發生的對聚醯亞胺膜的應力等,聚醯亞胺膜延伸,容易產生聚醯亞胺膜的面內延遲(RO)的偏差。尤其,關於第2實施形態的聚醯亞胺膜,構成非熱塑性聚醯亞胺層及熱塑性聚醯亞胺層的聚醯亞胺中的任一者均容易形成有序結構,因此藉由使剝離所需要的應力分散於聚醯亞胺膜的各層,可控制RO。Regarding the polyimide film in which the imidization of polyamic acid is completed on the support substrate, by the tension applied to the polyimide film when the polyimide film is separated from the support substrate, or for example The polyimide film stretches due to stress on the polyimide film generated during peeling using a blade or the like, and variation in the in-plane retardation (RO) of the polyimide film tends to occur. In particular, regarding the polyimide film of the second embodiment, any of the polyimides constituting the non-thermoplastic polyimide layer and the thermoplastic polyimide layer can easily form an ordered structure, so by making The stress required for peeling is dispersed in each layer of the polyimide membrane, and RO can be controlled.

另外,即便為如下方法亦可控制面內延遲(RO),所述方法是將支持基材上的聚醯胺酸的凝膠膜分離,與單軸延伸或雙軸延伸同時或連續地對聚醯胺酸的凝膠膜進行醯亞胺化。此時,為了更高精度地控制RO,較佳為適當調整延伸操作及醯亞胺化時的升溫速度、醯亞胺化的完成溫度、負荷等條件。In addition, the in-plane retardation (RO) can be controlled even by the method of separating the gel film of polyamic acid on the support substrate, and simultaneously or continuously stretching the polyamide with uniaxial stretching or biaxial stretching. The gel film of amide acid is imidized. At this time, in order to control RO more precisely, it is preferable to appropriately adjust the conditions such as the temperature increase rate during stretching operation and imidization, the completion temperature of imidization, and the load.

[銅張積層板] 第1實施形態、第2實施形態或第3實施形態的銅張積層板具備絕緣層,且於所述絕緣層的至少一個面上具備銅箔,絕緣層的一部分或全部只要使用第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜而形成即可。另外,為了提高絕緣層與銅箔的接著性,絕緣層中的與銅箔相接的層較佳為熱塑性聚醯亞胺層。因此,關於第3實施形態的聚醯亞胺膜,較佳為於與熱塑性聚醯亞胺層積層的狀態下用作銅張積層板。銅箔設置於絕緣層的單面或兩面上。即,第1實施形態、第2實施形態或第3實施形態的銅張積層板可為單面銅張積層板(單面CCL),亦可為兩面銅張積層板(兩面CCL)。於單面CCL的情況下,將積層於絕緣層的單面上的銅箔設為本發明的「第1銅箔層」。於兩面CCL的情況下,將積層於絕緣層的單面上的銅箔設為本發明的「第1銅箔層」,於絕緣層中,將積層於與積層有第1銅箔的面為相反側的面上的銅箔設為本發明的「第2銅箔層」。關於第1實施形態、第2實施形態或第3實施形態的銅張積層板,對銅箔進行蝕刻等並進行配線電路加工而形成銅配線,從而用作FPC。 [copper tension laminate] The copper tensioned laminate of the first embodiment, the second embodiment, or the third embodiment includes an insulating layer, and copper foil is provided on at least one surface of the insulating layer, and only a part or the whole of the insulating layer is used in the first embodiment. , The polyimide film of the second embodiment or the third embodiment may be formed. In addition, in order to improve the adhesion between the insulating layer and the copper foil, the layer in the insulating layer that is in contact with the copper foil is preferably a thermoplastic polyimide layer. Therefore, the polyimide film of the third embodiment is preferably used as a copper tension laminate in a laminated state with thermoplastic polyimide. The copper foil is provided on one or both sides of the insulating layer. That is, the copper tension laminated board of the first embodiment, the second embodiment, or the third embodiment may be a single-sided copper tension laminate (single-sided CCL), or may be a double-sided copper tension laminate (double-sided CCL). In the case of single-sided CCL, the copper foil laminated on one side of the insulating layer is referred to as the "first copper foil layer" in the present invention. In the case of a double-sided CCL, the copper foil laminated on one side of the insulating layer is referred to as the "first copper foil layer" of the present invention, and in the insulating layer, the surface on which the first copper foil is laminated is The copper foil on the surface on the opposite side is referred to as the "second copper foil layer" of the present invention. The copper laminated board of 1st Embodiment, 2nd Embodiment, or 3rd Embodiment etches copper foil etc., performs wiring circuit processing, forms copper wiring, and uses it as FPC.

銅張積層板例如可藉由如下方式製備:準備包含第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜而構成的樹脂膜,對其濺鍍金屬而形成種晶層後,例如藉由鍍銅而形成銅箔層。Copper tension laminated boards can be produced, for example, by preparing a resin film composed of the polyimide film of the first embodiment, the second embodiment, or the third embodiment, sputtering a metal thereon to form a seed layer Thereafter, a copper foil layer is formed, for example, by copper plating.

另外,銅張積層板亦可藉由如下方式製備:準備包含第1實施形態、第2實施形態或第3實施形態的聚醯亞胺膜而構成的樹脂膜,對其利用熱壓接等方法層壓銅箔。In addition, the copper tension laminated board can also be produced by preparing a resin film composed of the polyimide film of the first embodiment, the second embodiment, or the third embodiment, and applying a method such as thermocompression bonding to the resin film. Laminated copper foil.

進而,銅張積層板亦可藉由如下方式製備:將含有作為聚醯亞胺的前驅物的聚醯胺酸的塗佈液流延至銅箔上,進行乾燥而製成塗佈膜後,進行熱處理並進行醯亞胺化,而形成聚醯亞胺層。Furthermore, the copper tension laminate can also be produced by casting a coating solution containing polyamic acid as a precursor of polyimide onto a copper foil, drying it to form a coating film, and then performing heat treatment and imidization to form a polyimide layer.

<第1銅箔層> 第1實施形態、第2實施形態或第3實施形態的銅張積層板中,第1銅箔層中使用的銅箔(以下,有時記述為「第1銅箔」)並無特別限定,例如可為壓延銅箔亦可為電解銅箔。作為第1銅箔,可使用市售的銅箔。 <1st Copper Foil Layer> In the copper tensioned laminate of the first embodiment, the second embodiment, or the third embodiment, the copper foil used for the first copper foil layer (hereinafter, may be described as "first copper foil") is not particularly limited, For example, rolled copper foil or electrolytic copper foil may be used. As the first copper foil, a commercially available copper foil can be used.

第1實施形態、第2實施形態或第3實施形態中,第1銅箔的厚度較佳為18 μm以下,更佳為6 μm~13 μm的範圍內,進而佳為6 μm~12 μm的範圍內。藉由將第1銅箔的厚度設為18 μm以下、較佳為13 μm以下、進而佳為12 μm以下,可提高銅張積層板(或FPC)的彎折性。另外,就生產穩定性及處理性的觀點而言,第1銅箔的厚度的下限值較佳為設為6 μm。In the first embodiment, the second embodiment, or the third embodiment, the thickness of the first copper foil is preferably 18 μm or less, more preferably within a range of 6 μm to 13 μm, and still more preferably 6 μm to 12 μm. within range. By setting the thickness of the first copper foil to 18 μm or less, preferably 13 μm or less, and more preferably 12 μm or less, the bendability of the copper tension laminate (or FPC) can be improved. Moreover, it is preferable that the lower limit of the thickness of the 1st copper foil shall be 6 micrometers from a viewpoint of production stability and handleability.

另外,第1實施形態、第2實施形態或第3實施形態中,第1銅箔的拉伸彈性係數例如較佳為10 GPa~35 GPa的範圍內,更佳為15 GPa~25 GPa的範圍內。於使用壓延銅箔作為第1銅箔的情況下,若藉由熱處理進行退火,則柔軟性容易變高。因此,若銅箔的拉伸彈性係數小於所述下限值,則於在長條的第1銅箔上形成絕緣層的步驟中,第1銅箔自身的剛性因加熱而下降。另一方面,若拉伸彈性係數超過所述上限值,則於將FPC彎折時利用銅配線施加大的彎曲應力,所述耐彎折性下降。再者,壓延銅箔存在如下傾向:藉由在銅箔上形成絕緣層時的熱處理條件、或者形成絕緣層後的銅箔的退火處理等而其拉伸彈性係數發生變化。因此,第1實施形態、第2實施形態或第3實施形態中,於最終所得的銅張積層板中,只要第1銅箔的拉伸彈性係數為所述範圍內即可。In addition, in the first embodiment, the second embodiment, or the third embodiment, the tensile modulus of the first copper foil is, for example, preferably within a range of 10 GPa to 35 GPa, more preferably within a range of 15 GPa to 25 GPa. Inside. When using rolled copper foil as the 1st copper foil, if it anneals by heat processing, flexibility will become high easily. Therefore, if the tensile modulus of copper foil is less than the lower limit value, the rigidity of the first copper foil itself will be lowered by heating in the step of forming an insulating layer on the elongated first copper foil. On the other hand, when the tensile modulus of elasticity exceeds the above-mentioned upper limit, a large bending stress is applied by copper wiring when FPC is bent, and the above-mentioned bending resistance decreases. Furthermore, the rolled copper foil tends to have a modulus of tensile elasticity that changes depending on the heat treatment conditions when the insulating layer is formed on the copper foil, the annealing treatment of the copper foil after the insulating layer is formed, or the like. Therefore, in the first embodiment, the second embodiment, or the third embodiment, in the finally obtained copper tension laminate, the tensile modulus of the first copper foil may be within the above range.

<第2銅箔層> 第1實施形態、第2實施形態或第3實施形態中,第2銅箔層積層於絕緣層中的與第1銅箔層為相反側的面上。作為第2銅箔層中使用的銅箔(第2銅箔),並無特別限定,例如可為壓延銅箔亦可為電解銅箔。另外,作為第2銅箔,亦可使用市售的銅箔。再者,作為第2銅箔,亦可使用與第1銅箔相同者。 <Second Copper Foil Layer> In the first embodiment, the second embodiment, or the third embodiment, the second copper foil layer is laminated on the surface of the insulating layer that is on the opposite side to the first copper foil layer. Although it does not specifically limit as copper foil (2nd copper foil) used for a 2nd copper foil layer, For example, it may be a rolled copper foil or an electrolytic copper foil. Moreover, you may use a commercially available copper foil as a 2nd copper foil. In addition, the thing similar to the 1st copper foil can also be used as a 2nd copper foil.

[電路基板] 第1實施形態、第2實施形態或第3實施形態的銅張積層板主要作為FPC等的電路基板材料有用。即,可利用常法將第1實施形態、第2實施形態或第3實施形態的銅張積層板的銅箔加工成圖案狀而形成配線層,藉此製造作為本發明的一實施形態的FPC。 [實施例] [circuit substrate] The copper tension laminated board of the first embodiment, the second embodiment, or the third embodiment is mainly useful as a circuit board material such as FPC. That is, the FPC which is one embodiment of the present invention can be manufactured by processing the copper foil of the copper laminated board of the first embodiment, the second embodiment, or the third embodiment into a pattern shape to form a wiring layer by a conventional method. . [Example]

以下示出實施例,並對本發明的特徵進行更具體的說明。其中,本發明的範圍並不限定於實施例。再者,以下的實施例中,只要無特別說明,各種測定、評價為利用下述者。Examples are shown below, and the features of the present invention will be described more specifically. However, the scope of the present invention is not limited to the examples. In addition, in the following examples, unless otherwise specified, various measurements and evaluations used the following.

[黏度的測定] 使用E型黏度計(博勒飛(Brookfield)公司製造、商品名:DV-II+Pro),測定25℃下的黏度。以扭矩成為10%~90%的方式設定轉速,在開始測定後經過2分鐘後,讀取黏度穩定時的值。 [Measurement of viscosity] The viscosity at 25° C. was measured using an E-type viscometer (manufactured by Brookfield, trade name: DV-II+Pro). The rotational speed was set so that the torque became 10% to 90%, and after 2 minutes from the start of the measurement, the value when the viscosity was stable was read.

[玻璃轉移溫度(Tg)的測定] 關於玻璃轉移溫度,使用動態黏彈性測定裝置(DMA:UBM公司製造、商品名:E4000F),於自30℃起至400℃為止於升溫速度為4℃/分鐘、頻率為11 Hz下對5 mm×20 mm的尺寸的聚醯亞胺膜進行測定,將彈性係數變化(tanδ)為最大的溫度設為玻璃轉移溫度。再者,將顯示使用DMA測定的30℃下的儲存彈性係數為1.0×10 9Pa以上且280℃下的儲存彈性係數未滿3.0×10 8Pa者設為「熱塑性」,將顯示30℃下的儲存彈性係數為1.0×10 9Pa以上且280℃下的儲存彈性係數為3.0×10 8Pa以上者設為「非熱塑性」。 [Measurement of glass transition temperature (Tg)] Regarding the glass transition temperature, using a dynamic viscoelasticity measuring device (DMA: manufactured by UBM Corporation, trade name: E4000F), the temperature rise rate is 4°C/ The measurement was performed on a polyimide film having a size of 5 mm×20 mm at a frequency of 11 Hz, and the temperature at which the elastic coefficient change (tan δ) was maximum was defined as the glass transition temperature. In addition, the storage modulus of elasticity at 30°C measured using DMA is 1.0×10 9 Pa or more and the storage modulus of elasticity at 280°C is less than 3.0×10 8 Pa as "thermoplastic", and the temperature at 30°C is displayed. A storage modulus of 1.0×10 9 Pa or more and a storage modulus of 3.0×10 8 Pa or more at 280° C. were defined as “non-thermoplastic”.

[熱膨脹係數(CTE)的測定] 使用熱機械分析儀(布魯克(Bruker)公司製造、商品名:4000SA),一面對3 mm×20 mm的尺寸的聚醯亞胺膜施加5.0 g的負荷一面以一定的升溫速度自30℃起升溫至265℃為止,進而於所述溫度下保持10分鐘後,以5℃/分鐘的速度進行冷卻,求出自250℃起至100℃為止的平均熱膨脹係數(熱膨脹係數)。 [Measurement of Coefficient of Thermal Expansion (CTE)] Using a thermomechanical analyzer (manufactured by Bruker, trade name: 4000SA), while applying a load of 5.0 g to a polyimide film with a size of 3 mm×20 mm, the temperature was raised from 30°C at a constant rate. After raising the temperature to 265°C and maintaining the temperature for 10 minutes, cooling was performed at a rate of 5°C/min, and the average thermal expansion coefficient (thermal expansion coefficient) from 250°C to 100°C was obtained.

[吸濕率測定] 準備兩片聚醯亞胺膜的試驗片(寬度4 cm×長度25 cm),於80℃下乾燥1小時。於乾燥後立即放入23℃/50%RH的恆溫恆濕室內,靜置24小時以上,根據其前後的重量變化並藉由下式求出。 吸濕率(重量%)=[(吸濕後重量-乾燥後重量)/乾燥後重量]×100 [Determination of moisture absorption rate] Two test pieces of polyimide film (width 4 cm x length 25 cm) were prepared and dried at 80°C for 1 hour. Immediately after drying, put it in a constant temperature and humidity room at 23°C/50%RH, let it stand for more than 24 hours, and use the following formula to calculate the weight change before and after. Moisture absorption rate (weight%)=[(weight after moisture absorption-weight after drying)/weight after drying]×100

[介電常數及介電正切的測定] 使用向量網路分析儀(安捷倫(Agilent)公司製造、商品名E8363C)及分離介電質共振器(SPDR共振器),測定高頻10 GHz下的樹脂片的介電常數及介電正切。再者,測定中使用的材料是於溫度:24℃~26℃、濕度:45%~55%的條件下放置24小時者。 [Measurement of dielectric constant and dielectric tangent] The dielectric constant and dielectric tangent of the resin sheet at a high frequency of 10 GHz were measured using a vector network analyzer (manufactured by Agilent, trade name E8363C) and a split dielectric resonator (SPDR resonator). In addition, the material used for a measurement is what was left to stand for 24 hours under conditions of temperature: 24 degreeC - 26 degreeC, and humidity: 45% - 55%.

[醯亞胺基濃度的計算] 將醯亞胺基部(-(CO) 2-N-)的分子量除以聚醯亞胺的結構整體的分子量所得的值設為醯亞胺基濃度。 [Calculation of imide group concentration] The value obtained by dividing the molecular weight of the imide group (—(CO) 2 —N—) by the molecular weight of the entire polyimide structure was defined as the imide group concentration.

[銅箔的表面粗糙度的測定] 關於銅箔的表面粗糙度,使用原子力顯微鏡(Atomic Force Microscope,AFM)(布魯克AXS(Bruker AXS)公司製造、商品名:迪蒙蘇儀科(Dimension Icon)型SPM)、探針(布魯克AXS(Bruker AXS)公司製造、商品名:TESPA(NCHV)、前端曲率半徑為10 nm、彈簧常數為42 N/m),利用敲擊模式(Tapping Mode),對銅箔表面的80 μm×80 μm的範圍進行測定,求出十點平均粗糙度(Rz)。 [Measurement of Surface Roughness of Copper Foil] Regarding the surface roughness of the copper foil, an atomic force microscope (Atomic Force Microscope, AFM) (manufactured by Bruker AXS (Bruker AXS), trade name: Dimension Icon SPM), a probe (Bruker AXS ( Bruker AXS) company, trade name: TESPA (NCHV), tip curvature radius of 10 nm, spring constant of 42 N/m), using tapping mode (Tapping Mode), on the copper foil surface 80 μm × 80 μm The range is measured, and the ten-point average roughness (Rz) is obtained.

[剝離強度的測定] 將兩面銅張積層板(銅箔/樹脂層/銅箔)的熱壓接側與流延側的兩面的銅箔進行電路加工成寬度為0.8 mm(以兩面的銅箔成為相同位置的方式進行配線加工)後,切斷為寬度:8 cm×長度:4 cm,而製備測定樣品。測定樣品的流延側及熱壓接側的剝離強度是使用滕喜龍測試儀(Tensilon Tester)(東洋精機製作所製造、商品名:斯特羅格拉夫(Strograph)VE-1D),藉由雙面膠帶將測定樣品的熱壓接側或流延側的銅箔面固定於鋁板上,沿90°方向以50 mm/分鐘的速度剝離另一個銅箔,而求出自樹脂層剝離10 mm時的中央值強度。此時,將剝離強度為1.0 kN/m以上者設為◎(優異)、0.7 kN/m以上且未滿1.0 kN/m者設為○(良好)、0.4 kN/m以上且未滿0.7 kN/m者設為Δ(合格)、未滿0.4 kN/m者設為×(不合格)。 [Measurement of Peel Strength] The copper foil on both sides of the thermocompression bonding side and the casting side of the double-sided copper laminate (copper foil/resin layer/copper foil) is circuit-processed to a width of 0.8 mm (the copper foils on both sides are at the same position After wiring processing), it was cut into width: 8 cm x length: 4 cm, and a measurement sample was prepared. The peel strength of the casting side and the thermocompression bonding side of the sample was measured using a Tensilon Tester (manufactured by Toyo Seiki Seisakusho, trade name: Strograph VE-1D), by double-sided Fix the copper foil surface on the thermocompression bonding side or the casting side of the measurement sample to an aluminum plate with tape, and peel off the other copper foil at a speed of 50 mm/min in a 90° direction, and obtain the time when 10 mm is peeled off from the resin layer. median strength. At this time, the peel strength is ◎ (excellent) if it is 1.0 kN/m or more, ○ (good) if it is 0.7 kN/m or more and less than 1.0 kN/m, and 0.4 kN/m or more and less than 0.7 kN /m is defined as Δ (pass), and those less than 0.4 kN/m is defined as × (fail).

[面內延遲(RO)的測定] 面內延遲(RO)是使用雙折射率計(福特尼克萊迪思(photonic-lattice)公司製造、商品名:寬量程(Wide Range)雙折射評價系統WPA-100),求出聚醯亞胺膜的面內方向的延遲。測定波長為543 nm。 [Measurement of in-plane retardation (RO)] The in-plane retardation (RO) was obtained by using a birefringence meter (manufactured by photonic-lattice, trade name: Wide Range Birefringence Evaluation System WPA-100) to obtain polyimide Retardation in the in-plane direction of the film. The measurement wavelength is 543 nm.

[霧度值的測定] 霧度值的測定是使用霧度測定裝置(濁度計:日本電色工業公司製造、商品名:NDH5000),並藉由JIS K 7136中記載的測定方法對5 cm×5 cm的尺寸的聚醯亞胺膜進行。 [Measurement of haze value] The haze value was measured using a haze measuring device (nephelometer: manufactured by Nippon Denshoku Kogyo Co., Ltd., trade name: NDH5000), and the measurement method described in JIS K 7136 was used to measure the 5 cm × 5 cm size poly imide membrane.

[膜伸長率的測定] 關於切成為寬度12.7 mm×長度127 mm的聚醯亞胺膜,使用拉力測試儀(tension tester)(艾安德(Orientec)製造的滕喜龍(Tensilon)),以50 mm/min進行拉伸試驗,而求出25℃下的膜伸長率。 [Measurement of film elongation] Regarding the polyimide film cut into a width of 12.7 mm×length of 127 mm, a tensile test was performed at 50 mm/min using a tension tester (Tensilon manufactured by Orientec) , and the film elongation at 25°C was obtained.

實施例及參考例中使用的縮略詞表示以下的化合物。 BPDA:3,3',4,4'-聯苯四羧酸二酐 PMDA:均苯四甲酸二酐 NTCDA:2,3,6,7-萘四羧酸二酐 TAHQ:1,4-伸苯基雙(偏苯三甲酸單酯)二酐 TMEG:乙二醇雙偏苯三酸酐 m-TB:2,2'-二甲基-4,4'-二胺基聯苯 TPE-R:1,3-雙(4-胺基苯氧基)苯 TPE-Q:1,4-雙(4-胺基苯氧基)苯 APB:1,3-雙(3-胺基苯氧基)苯 3,3'-DAPM:3,3'-二胺基-二苯基甲烷 DTBAB:1,4-雙(4-胺基苯氧基)-2,5-二-第三丁基苯 BAPP:2,2-雙[4-(4-胺基苯氧基)苯基]丙烷 APAB:4-胺基苯基-4'-胺基苯甲酸酯 雙苯胺-M:1,3-雙[2-(4-胺基苯基)-2-丙基]苯 雙苯胺-P:1,4-雙[2-(4-胺基苯基)-2-丙基]苯(三井精細化學公司製造、商品名:雙苯胺-P) AABOZ:6-胺基-2-(4-胺基苯氧基)苯并噁唑 DTAm:2,6-二胺基-3,5-二乙基甲苯及2,4-二胺基-3,5-二乙基甲苯的混合物(庵原化學工業(Ihara Chemical Industry)公司製造、商品名:哈德屈爾(Hardcure)10、胺價:629 KOHmg/g) BAPM:雙(4-胺基-3-乙基-5-甲基苯基)甲烷(庵原化學工業(Ihara Chemical Industry)公司製造、商品名:屈爾哈德(Curehard)MED) DMAc:N,N-二甲基乙醯胺 Abbreviations used in Examples and Reference Examples represent the following compounds. BPDA: 3,3',4,4'-Biphenyltetracarboxylic dianhydride PMDA: pyromellitic dianhydride NTCDA: 2,3,6,7-naphthalene tetracarboxylic dianhydride TAHQ: 1,4-phenylene bis(trimellitic acid monoester) dianhydride TMEG: Ethylene glycol bis-trimellitic anhydride m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl TPE-R: 1,3-bis(4-aminophenoxy)benzene TPE-Q: 1,4-bis(4-aminophenoxy)benzene APB: 1,3-bis(3-aminophenoxy)benzene 3,3'-DAPM: 3,3'-Diamino-diphenylmethane DTBAB: 1,4-bis(4-aminophenoxy)-2,5-di-tert-butylbenzene BAPP: 2,2-bis[4-(4-aminophenoxy)phenyl]propane APAB: 4-Aminophenyl-4'-aminobenzoate Dianiline-M: 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene Dianiline-P: 1,4-bis[2-(4-aminophenyl)-2-propyl]benzene (manufactured by Mitsui Fine Chemicals, trade name: Dianiline-P) AABOZ: 6-amino-2-(4-aminophenoxy)benzoxazole DTAm: a mixture of 2,6-diamino-3,5-diethyltoluene and 2,4-diamino-3,5-diethyltoluene (manufactured and commercialized by Ihara Chemical Industry Co., Ltd. Name: Hardcure 10, amine value: 629 KOHmg/g) BAPM: bis(4-amino-3-ethyl-5-methylphenyl)methane (manufactured by Ihara Chemical Industry, trade name: Curehard MED) DMAc: N,N-Dimethylacetamide

(合成例A-1) 於氮氣流下,在300 ml的分離式燒瓶中投入1.335 g的m-TB(0.0063莫耳)及10.414 g的TPE-R(0.0356莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加0.932 g的PMDA(0.0043莫耳)及11.319 g的BPDA(0.0385莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-1。聚醯胺酸溶液A-1的溶液黏度為1,420 cps。 (Synthesis Example A-1) Under nitrogen flow, 1.335 g of m-TB (0.0063 mol) and 10.414 g of TPE-R (0.0356 mol) and the amount of solid content after polymerization to 12% by weight were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 0.932 g of PMDA (0.0043 mol) and 11.319 g of BPDA (0.0385 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-1. The solution viscosity of polyamide acid solution A-1 is 1,420 cps.

其次,於將聚醯胺酸溶液A-1以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-1(熱塑性、Tg:256℃、吸濕率:0.36重量%)。另外,構成聚醯亞胺膜A-1的聚醯亞胺的醯亞胺基濃度為26.4重量%。Next, after the polyamic acid solution A-1 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-1 (thermoplasticity, Tg: 256° C., moisture absorption rate: 0.36% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-1 was 26.4% by weight.

(合成例A-2) 於氮氣流下,在300 ml的分離式燒瓶中投入0.451 g的m-TB(0.0021莫耳)及11.794 g的TPE-R(0.0403莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.834 g的PMDA(0.0130莫耳)及8.921 g的BPDA(0.0303莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-2。聚醯胺酸溶液A-2的溶液黏度為1,510 cps。 (Synthesis Example A-2) Under a nitrogen stream, 0.451 g of m-TB (0.0021 mol) and 11.794 g of TPE-R (0.0403 mol) and an amount of 12% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 2.834 g of PMDA (0.0130 mol) and 8.921 g of BPDA (0.0303 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-2. The solution viscosity of polyamide acid solution A-2 is 1,510 cps.

其次,於將聚醯胺酸溶液A-2以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-2(熱塑性、Tg:242℃、吸濕率:0.35重量%)。另外,構成聚醯亞胺膜A-2的聚醯亞胺的醯亞胺基濃度為26.5重量%。Next, after the polyamic acid solution A-2 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-2 (thermoplasticity, Tg: 242° C., moisture absorption rate: 0.35% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-2 was 26.5% by weight.

(合成例A-3) 於氮氣流下,在300 ml的分離式燒瓶中投入0.908 g的m-TB(0.0043莫耳)及11.253 g的TPE-R(0.0385莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.855 g的PMDA(0.0131莫耳)及8.985 g的BPDA(0.0305莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-3。聚醯胺酸溶液A-3的溶液黏度為1,550 cps。 (Synthesis Example A-3) Under nitrogen flow, 0.908 g of m-TB (0.0043 moles) and 11.253 g of TPE-R (0.0385 moles) and the amount of solid content concentration after polymerization to 12% by weight were put into a 300 ml separate flask DMAc, stirred and dissolved at room temperature. Next, after adding 2.855 g of PMDA (0.0131 mol) and 8.985 g of BPDA (0.0305 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-3. The solution viscosity of polyamide acid solution A-3 is 1,550 cps.

其次,於將聚醯胺酸溶液A-3以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-3(熱塑性、Tg:240℃、吸濕率:0.31重量%)。另外,構成聚醯亞胺膜A-3的聚醯亞胺的醯亞胺基濃度為26.9重量%。Next, after the polyamic acid solution A-3 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-3 (thermoplasticity, Tg: 240° C., moisture absorption rate: 0.31% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-3 was 26.9% by weight.

(合成例A-4) 於氮氣流下,在300 ml的分離式燒瓶中投入1.372 g的m-TB(0.0065莫耳)及10.704 g的TPE-R(0.0366莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.875 g的PMDA(0.0132莫耳)及9.049 g的BPDA(0.0308莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-4。聚醯胺酸溶液A-4的溶液黏度為1,580 cps。 (Synthesis Example A-4) Under a nitrogen stream, 1.372 g of m-TB (0.0065 mol) and 10.704 g of TPE-R (0.0366 mol) and an amount of 12% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 2.875 g of PMDA (0.0132 mol) and 9.049 g of BPDA (0.0308 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-4. The solution viscosity of polyamide acid solution A-4 is 1,580 cps.

其次,於將聚醯胺酸溶液A-4以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-4(熱塑性、Tg:240℃、吸濕率:0.29重量%)。另外,構成聚醯亞胺膜A-4的聚醯亞胺的醯亞胺基濃度為27.1重量%。Next, after the polyamic acid solution A-4 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-4 (thermoplasticity, Tg: 240° C., moisture absorption rate: 0.29% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-4 was 27.1% by weight.

(合成例A-5) 於氮氣流下,在300 ml的分離式燒瓶中投入1.842 g的m-TB(0.0087莫耳)及10.147 g的TPE-R(0.0347莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.896 g的PMDA(0.0133莫耳)及9.115 g的BPDA(0.0310莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-5。聚醯胺酸溶液A-5的溶液黏度為1,610 cps。 (Synthesis Example A-5) Under a nitrogen stream, 1.842 g of m-TB (0.0087 mol) and 10.147 g of TPE-R (0.0347 mol) and an amount of 12% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 2.896 g of PMDA (0.0133 mol) and 9.115 g of BPDA (0.0310 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-5. The solution viscosity of polyamide acid solution A-5 is 1,610 cps.

其次,於將聚醯胺酸溶液A-5以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-5(熱塑性、Tg:244℃、吸濕率:0.27重量%)。另外,構成聚醯亞胺膜A-5的聚醯亞胺的醯亞胺基濃度為27.4重量%。Next, after the polyamic acid solution A-5 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-5 (thermoplasticity, Tg: 244° C., moisture absorption rate: 0.27% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-5 was 27.4% by weight.

(合成例A-6) 於氮氣流下,在300 ml的分離式燒瓶中投入2.804 g的m-TB(0.0132莫耳)及9.009 g的TPE-R(0.0308莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.938 g的PMDA(0.0135莫耳)及9.249 g的BPDA(0.0314莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-6。聚醯胺酸溶液A-6的溶液黏度為1,720 cps。 (Synthesis Example A-6) Under nitrogen flow, 2.804 g of m-TB (0.0132 mol) and 9.009 g of TPE-R (0.0308 mol) and the amount of solid content after polymerization to 12% by weight were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 2.938 g of PMDA (0.0135 mol) and 9.249 g of BPDA (0.0314 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-6. The solution viscosity of polyamide acid solution A-6 is 1,720 cps.

其次,於將聚醯胺酸溶液A-6以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-6(熱塑性、Tg:248℃、吸濕率:0.27重量%)。另外,構成聚醯亞胺膜A-6的聚醯亞胺的醯亞胺基濃度為27.8重量%。Next, after the polyamic acid solution A-6 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-6 (thermoplasticity, Tg: 248° C., moisture absorption rate: 0.27% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-6 was 27.8% by weight.

(合成例A-7) 於氮氣流下,在300 ml的分離式燒瓶中投入1.469 g的APAB(0.0064莫耳)及10.658 g的TPE-R(0.0365莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.863 g的PMDA(0.0131莫耳份)及9.011 g的BPDA(0.0306莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-7。聚醯胺酸溶液A-7的溶液黏度為1,280 cps。 (Synthesis Example A-7) Under nitrogen flow, 1.469 g of APAB (0.0064 mol) and 10.658 g of TPE-R (0.0365 mol) and DMAc in an amount of 12% by weight after polymerization were charged into a 300 ml separate flask, Stir and dissolve at room temperature. Next, after adding 2.863 g of PMDA (0.0131 mol parts) and 9.011 g of BPDA (0.0306 mol parts), stirring was continued at room temperature for 3 hours and polymerization reaction was carried out to obtain polyamic acid solution A-7. The solution viscosity of polyamide acid solution A-7 is 1,280 cps.

其次,於將聚醯胺酸溶液A-7以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-7(熱塑性、Tg:239℃、吸濕率:0.31重量%)。另外,構成聚醯亞胺膜A-7的聚醯亞胺的醯亞胺基濃度為27.0重量%。Next, after the polyamic acid solution A-7 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-7 (thermoplasticity, Tg: 239° C., moisture absorption rate: 0.31% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-7 was 27.0% by weight.

(合成例A-8) 於氮氣流下,在300 ml的分離式燒瓶中投入1.372 g的m-TB(0.0065莫耳)及10.704 g的APB(0.0366莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.875 g的PMDA(0.0132莫耳)及9.049 g的BPDA(0.0308莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-8。聚醯胺酸溶液A-8的溶液黏度為1,190 cps。 (Synthesis Example A-8) Under a nitrogen stream, 1.372 g of m-TB (0.0065 mol) and 10.704 g of APB (0.0366 mol) and DMAc in an amount of 12% by weight of solid content after polymerization were charged into a 300 ml separate flask, Stir and dissolve at room temperature. Next, after adding 2.875 g of PMDA (0.0132 mol) and 9.049 g of BPDA (0.0308 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-8. The solution viscosity of polyamide acid solution A-8 is 1,190 cps.

其次,於將聚醯胺酸溶液A-8以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-8(熱塑性、Tg:235℃、吸濕率:0.31重量%)。另外,構成聚醯亞胺膜A-8的聚醯亞胺的醯亞胺基濃度為27.1重量%。Next, after the polyamic acid solution A-8 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-8 (thermoplasticity, Tg: 235° C., moisture absorption rate: 0.31% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-8 was 27.1% by weight.

(合成例A-9) 於氮氣流下,在300 ml的分離式燒瓶中投入1.162 g的m-TB(0.0055莫耳)及12.735 g的BAPP(0.0310莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.436 g的PMDA(0.0112莫耳)及7.667 g的BPDA(0.0261莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-9。聚醯胺酸溶液A-9的溶液黏度為1,780 cps。 (Synthesis Example A-9) Under nitrogen flow, 1.162 g of m-TB (0.0055 mol) and 12.735 g of BAPP (0.0310 mol) and DMAc in an amount of 12% by weight after polymerization were charged into a 300 ml separate flask, Stir and dissolve at room temperature. Next, after adding 2.436 g of PMDA (0.0112 mol) and 7.667 g of BPDA (0.0261 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-9. The solution viscosity of polyamide acid solution A-9 is 1,780 cps.

其次,於將聚醯胺酸溶液A-9以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-9(熱塑性、Tg:278℃、吸濕率:0.34重量%)。另外,構成聚醯亞胺膜A-9的聚醯亞胺的醯亞胺基濃度為22.6重量%。Next, after the polyamic acid solution A-9 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-9 (thermoplasticity, Tg: 278° C., moisture absorption rate: 0.34% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-9 was 22.6% by weight.

(合成例A-10) 於氮氣流下,在300 ml的分離式燒瓶中投入1.411 g的m-TB(0.0066莫耳)及11.011 g的TPE-R(0.0377莫耳)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加4.929 g的PMDA(0.0226莫耳)及6.649 g的BPDA(0.0226莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-10。聚醯胺酸溶液A-10的溶液黏度為2,330 cps。 (Synthesis Example A-10) Under a nitrogen stream, 1.411 g of m-TB (0.0066 mol) and 11.011 g of TPE-R (0.0377 mol) and an amount of 12% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 4.929 g of PMDA (0.0226 mol) and 6.649 g of BPDA (0.0226 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-10. The solution viscosity of polyamide acid solution A-10 is 2,330 cps.

其次,於將聚醯胺酸溶液A-10以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-10(熱塑性、Tg:276℃、吸濕率:0.41重量%)。另外,構成聚醯亞胺膜A-10的聚醯亞胺的醯亞胺基濃度為28.0重量%。Next, after the polyamic acid solution A-10 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-10 (thermoplasticity, Tg: 276° C., moisture absorption rate: 0.41% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-10 was 28.0% by weight.

(合成例A-11) 於氮氣流下,在300 ml的分離式燒瓶中投入12.327重量份的TPE-R(0.0422莫耳)及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加2.815 g的PMDA(0.0129莫耳)及8.858 g的BPDA(0.0301莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-11。聚醯胺酸溶液A-11的溶液黏度為1,530 cps。 (Synthesis Example A-11) Under a nitrogen flow, 12.327 parts by weight of TPE-R (0.0422 moles) and DMAc in an amount of 12% by weight of solid content after polymerization were put into a 300 ml separate flask, and stirred and dissolved at room temperature . Next, after adding 2.815 g of PMDA (0.0129 mol) and 8.858 g of BPDA (0.0301 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-11. The solution viscosity of polyamide acid solution A-11 is 1,530 cps.

其次,於將聚醯胺酸溶液A-11以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-11(熱塑性、Tg:244℃、吸濕率:0.39重量%)。另外,構成聚醯亞胺膜A-11的聚醯亞胺的醯亞胺基濃度為26.5重量%。Next, after the polyamic acid solution A-11 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-11 (thermoplasticity, Tg: 244° C., moisture absorption rate: 0.39% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-11 was 26.5% by weight.

(合成例A-12) 於氮氣流下,在300 ml的分離式燒瓶中投入12.128 g的m-TB(0.0571莫耳)及1.856 g的TPE-R(0.0063莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加6.819 g的PMDA(0.0313莫耳)及9.198 g的BPDA(0.0313莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-12。聚醯胺酸溶液A-12的溶液黏度為29,100 cps。 (Synthesis Example A-12) Under a nitrogen stream, 12.128 g of m-TB (0.0571 mol) and 1.856 g of TPE-R (0.0063 mol) and an amount of 15% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 6.819 g of PMDA (0.0313 mol) and 9.198 g of BPDA (0.0313 mol), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution A-12. The solution viscosity of polyamide acid solution A-12 is 29,100 cps.

其次,於將聚醯胺酸溶液A-12以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-12(非熱塑性、Tg:322℃、吸濕率:0.57重量%)。另外,構成聚醯亞胺膜A-12的聚醯亞胺的醯亞胺基濃度為31.8重量%。Next, after the polyamic acid solution A-12 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-12 (non-thermoplastic, Tg: 322° C., moisture absorption rate: 0.57% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-12 was 31.8% by weight.

(合成例A-13) 於氮氣流下,在300 ml的分離式燒瓶中投入13.707 g的m-TB(0.0646莫耳)及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加6.936 g的PMDA(0.0318莫耳)及9.356 g的BPDA(0.0318莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-13。聚醯胺酸溶液A-13的溶液黏度為29,900 cps。 (Synthesis Example A-13) Under a nitrogen stream, 13.707 g of m-TB (0.0646 mol) and DMAc in an amount to have a solid content concentration of 15% by weight after polymerization were charged into a 300 ml separate flask, and stirred and dissolved at room temperature. Next, after adding 6.936 g of PMDA (0.0318 mol) and 9.356 g of BPDA (0.0318 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-13. The solution viscosity of polyamide acid solution A-13 is 29,900 cps.

其次,於將聚醯胺酸溶液A-13以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-13(非熱塑性、Tg:332℃、吸濕率:0.63重量%)。另外,構成聚醯亞胺膜A-13的聚醯亞胺的醯亞胺基濃度為32.4重量%。Next, after the polyamic acid solution A-13 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-13 (non-thermoplastic, Tg: 332° C., moisture absorption rate: 0.63% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-13 was 32.4% by weight.

(合成例A-14) 於氮氣流下,在300 ml的分離式燒瓶中投入12.061 g的m-TB(0.0568莫耳)、0.923 g的TPE-Q(0.0032莫耳)及1.0874 g的雙苯胺-M(0.0032莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加6.781 g的PMDA(0.0311莫耳)及9.147 g的BPDA(0.0311莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-14。聚醯胺酸溶液A-14的溶液黏度為29,800 cps。 (Synthesis Example A-14) Under nitrogen flow, put 12.061 g of m-TB (0.0568 moles), 0.923 g of TPE-Q (0.0032 moles) and 1.0874 g of dianiline-M (0.0032 moles) into a 300 ml separate flask, and DMAc was stirred and dissolved at room temperature in such an amount that the solid content concentration after polymerization became 15% by weight. Next, after adding 6.781 g of PMDA (0.0311 mol) and 9.147 g of BPDA (0.0311 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-14. The solution viscosity of polyamide acid solution A-14 is 29,800 cps.

其次,於將聚醯胺酸溶液A-14以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-14(非熱塑性、Tg:322℃、吸濕率:0.61重量%)。另外,構成聚醯亞胺膜A-14的聚醯亞胺的醯亞胺基濃度為31.6重量%。Next, after the polyamic acid solution A-14 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-14 (non-thermoplastic, Tg: 322° C., moisture absorption rate: 0.61% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-14 was 31.6% by weight.

(合成例A-15) 於氮氣流下,在300 ml的分離式燒瓶中投入11.978 g的m-TB(0.0564莫耳)、0.916 g的TPE-Q(0.0031莫耳)及1.287 g的BAPP(0.0031莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加6.735 g的PMDA(0.0309莫耳)及9.084 g的BPDA(0.0309莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-15。聚醯胺酸溶液A-15的溶液黏度為29,200 cps。 (Synthesis Example A-15) Under nitrogen flow, 11.978 g of m-TB (0.0564 moles), 0.916 g of TPE-Q (0.0031 moles) and 1.287 g of BAPP (0.0031 moles) were put into a 300 ml separate flask, and after polymerization DMAc in an amount such that the solid content concentration becomes 15% by weight was stirred and dissolved at room temperature. Next, after adding 6.735 g of PMDA (0.0309 mol) and 9.084 g of BPDA (0.0309 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-15. The solution viscosity of polyamide acid solution A-15 is 29,200 cps.

其次,於將聚醯胺酸溶液A-15以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-15(非熱塑性、Tg:324℃、吸濕率:0.58重量%)。另外,構成聚醯亞胺膜A-15的聚醯亞胺的醯亞胺基濃度為31.4重量%。Next, after the polyamic acid solution A-15 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film A-15 (non-thermoplastic, Tg: 324° C., moisture absorption rate: 0.58% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-15 was 31.4% by weight.

(合成例A-16) 於氮氣流下,在300 ml的分離式燒瓶中投入12.128 g的m-TB(0.0571莫耳)及1.856 g的TPE-Q(0.0063莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加6.819 g的PMDA(0.0313莫耳)及9.198 g的BPDA(0.0313莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-16。聚醯胺酸溶液A-16的溶液黏度為32,800 cps。 (Synthesis Example A-16) Under a nitrogen stream, 12.128 g of m-TB (0.0571 mol) and 1.856 g of TPE-Q (0.0063 mol) and an amount of 15% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 6.819 g of PMDA (0.0313 mol) and 9.198 g of BPDA (0.0313 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-16. The solution viscosity of polyamide acid solution A-16 is 32,800 cps.

其次,於將聚醯胺酸溶液A-16以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-16(非熱塑性、Tg:330℃、吸濕率:0.59重量%)。另外,構成聚醯亞胺膜A-16的聚醯亞胺的醯亞胺基濃度為31.8重量%。Next, after the polyamic acid solution A-16 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film A-16 (non-thermoplastic, Tg: 330° C., moisture absorption rate: 0.59% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-16 was 31.8% by weight.

(合成例A-17) 於氮氣流下,在300 ml的分離式燒瓶中投入12.323 g的m-TB(0.0580莫耳)及1.886 g的TPE-R(0.0064莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加8.314 g的PMDA(0.0381莫耳)及7.477 g的BPDA(0.0254莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-17。聚醯胺酸溶液A-17的溶液黏度為31,500 cps。 (Synthesis Example A-17) Under a nitrogen stream, 12.323 g of m-TB (0.0580 mol) and 1.886 g of TPE-R (0.0064 mol) and an amount of 15% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 8.314 g of PMDA (0.0381 mol) and 7.477 g of BPDA (0.0254 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-17. The solution viscosity of polyamide acid solution A-17 is 31,500 cps.

其次,於將聚醯胺酸溶液A-17以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-17(非熱塑性、Tg:342℃、吸濕率:0.56重量%)。另外,構成聚醯亞胺膜A-17的聚醯亞胺的醯亞胺基濃度為32.3重量%。Next, after the polyamic acid solution A-17 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-17 (non-thermoplastic, Tg: 342° C., moisture absorption rate: 0.56% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-17 was 32.3% by weight.

(合成例A-18) 於氮氣流下,在300 ml的分離式燒瓶中投入13.434 g的m-TB(0.0633莫耳)及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加6.188 g的PMDA(0.0281莫耳)、9.170 g的BPDA(0.0312莫耳)及1.279 g的TMEG(0.0031莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-18。聚醯胺酸溶液A-18的溶液黏度為14,100 cps。 (Synthesis Example A-18) Under nitrogen flow, 13.434 g of m-TB (0.0633 mol) and DMAc in an amount to obtain a solid content concentration of 15% by weight after polymerization were charged into a 300 ml separate flask, and stirred and dissolved at room temperature. Next, after adding 6.188 g of PMDA (0.0281 moles), 9.170 g of BPDA (0.0312 moles) and 1.279 g of TMEG (0.0031 moles), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain Polyamide acid solution A-18. The solution viscosity of polyamide acid solution A-18 is 14,100 cps.

其次,於將聚醯胺酸溶液A-18以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-18(非熱塑性、Tg:314℃、吸濕率:0.59重量%)。另外,構成聚醯亞胺膜A-18的聚醯亞胺的醯亞胺基濃度為31.7重量%。Next, after the polyamic acid solution A-18 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film A-18 (non-thermoplastic, Tg: 314° C., moisture absorption rate: 0.59% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-18 was 31.7% by weight.

(合成例A-19) 於氮氣流下,在300 ml的分離式燒瓶中投入12.003 g的m-TB(0.0565莫耳)及1.836 g的TPE-R(0.0063莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加5.399 g的PMDA(0.0248莫耳)、9.103 g的BPDA(0.0309莫耳)及1.659 g的NTCDA(0.0062莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-19。聚醯胺酸溶液A-19的溶液黏度為31,200 cps。 (Synthesis Example A-19) Under a nitrogen flow, 12.003 g of m-TB (0.0565 mol) and 1.836 g of TPE-R (0.0063 mol) and an amount of 15% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 5.399 g of PMDA (0.0248 moles), 9.103 g of BPDA (0.0309 moles) and 1.659 g of NTCDA (0.0062 moles), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain Polyamide acid solution A-19. The solution viscosity of polyamide acid solution A-19 is 31,200 cps.

其次,於將聚醯胺酸溶液A-19以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-19(非熱塑性、Tg:311℃、吸濕率:0.58重量%)。另外,構成聚醯亞胺膜A-19的聚醯亞胺的醯亞胺基濃度為31.4重量%。Next, after the polyamic acid solution A-19 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film A-19 (non-thermoplastic, Tg: 311° C., moisture absorption rate: 0.58% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-19 was 31.4% by weight.

(合成例A-20) 於氮氣流下,在300 ml的分離式燒瓶中投入8.778 g的m-TB(0.0414莫耳)、1.860 g的TPE-R(0.0064莫耳)及3.582 g的AABOZ(0.0159莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加8.309 g的PMDA(0.0381莫耳)及7.472 g的BPDA(0.0254莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-20。聚醯胺酸溶液A-20的溶液黏度為42,300 cps。 (Synthesis Example A-20) Under nitrogen flow, 8.778 g of m-TB (0.0414 moles), 1.860 g of TPE-R (0.0064 moles), 3.582 g of AABOZ (0.0159 moles) and polymerized DMAc in an amount having a solid content concentration of 15% by weight was stirred and dissolved at room temperature. Next, after adding 8.309 g of PMDA (0.0381 mol) and 7.472 g of BPDA (0.0254 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-20. The solution viscosity of polyamide acid solution A-20 is 42,300 cps.

其次,於將聚醯胺酸溶液A-20以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-20(非熱塑性、Tg:312℃、吸濕率:0.61重量%)。另外,構成聚醯亞胺膜A-20的聚醯亞胺的醯亞胺基濃度為32.1重量%。Next, after the polyamic acid solution A-20 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film A-20 (non-thermoplastic, Tg: 312° C., moisture absorption rate: 0.61% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-20 was 32.1% by weight.

(合成例A-21) 於氮氣流下,在300 ml的分離式燒瓶中投入5.365 g的m-TB(0.0253莫耳)、1.847 g的TPE-R(0.0063莫耳)及7.116 g的AABOZ(0.0316莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加8.252 g的PMDA(0.0378莫耳)及7.421 g的BPDA(0.0252莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-21。聚醯胺酸溶液A-21的溶液黏度為22,700 cps。 (Synthesis Example A-21) Under nitrogen flow, 5.365 g of m-TB (0.0253 moles), 1.847 g of TPE-R (0.0063 moles), 7.116 g of AABOZ (0.0316 moles) and polymerized DMAc in an amount having a solid content concentration of 15% by weight was stirred and dissolved at room temperature. Next, after adding 8.252 g of PMDA (0.0378 mol) and 7.421 g of BPDA (0.0252 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-21. The solution viscosity of polyamide acid solution A-21 is 22,700 cps.

其次,於將聚醯胺酸溶液A-21以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-21(非熱塑性、Tg:320℃、吸濕率:0.65重量%)。另外,構成聚醯亞胺膜A-21的聚醯亞胺的醯亞胺基濃度為31.9重量%。Next, after the polyamic acid solution A-21 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-21 (non-thermoplastic, Tg: 320° C., moisture absorption rate: 0.65% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-21 was 31.9% by weight.

(合成例A-22) 於氮氣流下,在300 ml的分離式燒瓶中投入8.110 g的m-TB(0.0382莫耳)、1.861 g的TPE-R(0.0064莫耳)及4.360 g的APAB(0.0191莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加8.250 g的PMDA(0.0378莫耳)及7.419 g的BPDA(0.0252莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-22。聚醯胺酸溶液A-22的溶液黏度為24,500 cps。 (Synthesis Example A-22) Under nitrogen flow, 8.110 g of m-TB (0.0382 moles), 1.861 g of TPE-R (0.0064 moles), 4.360 g of APAB (0.0191 moles) and polymerized DMAc in an amount having a solid content concentration of 15% by weight was stirred and dissolved at room temperature. Next, after adding 8.250 g of PMDA (0.0378 mol) and 7.419 g of BPDA (0.0252 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-22. The solution viscosity of polyamide acid solution A-22 is 24,500 cps.

其次,於將聚醯胺酸溶液A-22以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-22(非熱塑性、Tg:322℃、吸濕率:0.57重量%)。另外,構成聚醯亞胺膜A-22的聚醯亞胺的醯亞胺基濃度為32.0重量%。Next, after the polyamic acid solution A-22 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-22 (non-thermoplastic, Tg: 322° C., moisture absorption rate: 0.57% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-22 was 32.0% by weight.

(合成例A-23) 於氮氣流下,在300 ml的分離式燒瓶中投入11.755 g的m-TB(0.0554莫耳)及1.799 g的TPE-R(0.0062莫耳)及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加3.966 g的PMDA(0.0182莫耳)及12.481 g的BPDA(0.0424莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-23。聚醯胺酸溶液A-23的溶液黏度為26,800 cps。 (Synthesis Example A-23) Under a nitrogen stream, 11.755 g of m-TB (0.0554 mol) and 1.799 g of TPE-R (0.0062 mol) and an amount of 15% by weight of solid content after polymerization were put into a 300 ml separate flask. DMAc, stirred and dissolved at room temperature. Next, after adding 3.966 g of PMDA (0.0182 mol) and 12.481 g of BPDA (0.0424 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-23. The solution viscosity of polyamide acid solution A-23 is 26,800 cps.

其次,於將聚醯胺酸溶液A-23以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-23(非熱塑性、Tg:291℃、吸濕率:0.59重量%)。另外,構成聚醯亞胺膜A-23的聚醯亞胺的醯亞胺基濃度為30.7重量%。Next, after the polyamic acid solution A-23 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-23 (non-thermoplastic, Tg: 291° C., moisture absorption rate: 0.59% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-23 was 30.7% by weight.

(合成例A-24) 於氮氣流下,在300 ml的分離式燒瓶中投入14.405 g的m-TB(0.0679莫耳)及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加11.663 g的PMDA(0.0535莫耳)及3.933 g的BPDA(0.0134莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-24。聚醯胺酸溶液A-24的溶液黏度為33,600 cps。 (Synthesis Example A-24) Under a nitrogen stream, 14.405 g of m-TB (0.0679 mol) and DMAc in an amount to have a solid content concentration of 15% by weight after polymerization were charged into a 300 ml separate flask, and stirred and dissolved at room temperature. Next, after adding 11.663 g of PMDA (0.0535 mol) and 3.933 g of BPDA (0.0134 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-24. The solution viscosity of polyamide acid solution A-24 is 33,600 cps.

其次,於將聚醯胺酸溶液A-24以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-24(非熱塑性、Tg:400℃以上、吸濕率:0.78重量%)。另外,構成聚醯亞胺膜A-24的聚醯亞胺的醯亞胺基濃度為34.2重量%。Next, after the polyamic acid solution A-24 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film A-24 (non-thermoplastic, Tg: 400° C. or higher, moisture absorption rate: 0.78% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-24 was 34.2% by weight.

(合成例A-25) 於氮氣流下,在300 ml的分離式燒瓶中投入12.201 g的m-TB(0.0575莫耳)及1.042 g的雙苯胺-M(0.0030莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加7.991 g的NTCDA(0.0298莫耳)及8.766 g的BPDA(0.0298莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-25。聚醯胺酸溶液A-25的溶液黏度為30,100 cps。 (Synthesis Example A-25) Under a nitrogen flow, 12.201 g of m-TB (0.0575 moles) and 1.042 g of dianiline-M (0.0030 moles) were charged into a 300 ml separate flask in such an amount that the solid content concentration after polymerization became 15% by weight DMAc was stirred and dissolved at room temperature. Next, after adding 7.991 g of NTCDA (0.0298 mol) and 8.766 g of BPDA (0.0298 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-25. The solution viscosity of polyamide acid solution A-25 is 30,100 cps.

其次,於將聚醯胺酸溶液A-25以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-25(非熱塑性、Tg:400℃以上、吸濕率:0.57重量%)。另外,構成聚醯亞胺膜A-25的聚醯亞胺的醯亞胺基濃度為30.2重量%。Next, after the polyamic acid solution A-25 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film A-25 (non-thermoplastic, Tg: 400° C. or higher, moisture absorption rate: 0.57% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-25 was 30.2% by weight.

(合成例A-26) 於氮氣流下,在300 ml的分離式燒瓶中投入11.204 g的m-TB(0.0528莫耳)及0.670 g的BAPP(0.0016莫耳)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加5.845 g的PMDA(0.0268莫耳)及12.281 g的TAHQ(0.0268莫耳)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液A-26。聚醯胺酸溶液A-26的溶液黏度為26,600 cps。 (Synthesis Example A-26) Under nitrogen flow, 11.204 g of m-TB (0.0528 moles) and 0.670 g of BAPP (0.0016 moles) and DMAc in an amount of 15% by weight of the solid content concentration after polymerization were charged into a 300 ml separate flask, Stir and dissolve at room temperature. Next, after adding 5.845 g of PMDA (0.0268 mol) and 12.281 g of TAHQ (0.0268 mol), stirring was continued at room temperature for 3 hours and polymerization was carried out to obtain polyamic acid solution A-26. The solution viscosity of polyamide acid solution A-26 is 26,600 cps.

其次,於將聚醯胺酸溶液A-26以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜A-26(非熱塑性、Tg:304℃、吸濕率:0.49重量%)。另外,構成聚醯亞胺膜A-26的聚醯亞胺的醯亞胺基濃度為26.9重量%。Next, after the polyamic acid solution A-26 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film A-26 (non-thermoplastic, Tg: 304° C., moisture absorption rate: 0.49% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film A-26 was 26.9% by weight.

[實施例A-1] 於將聚醯胺酸溶液A-1以硬化後的厚度成為約2 μm~3 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:0.6 μm)後,在120℃下進行加熱乾燥並去除溶媒。其次,於其上將聚醯胺酸溶液A-15以硬化後的厚度成為約21 μm的方式均勻地進行塗佈,在120℃下進行加熱乾燥並去除溶媒。進而,於其上將聚醯胺酸溶液A-1以硬化後的厚度成為約2 μm~3 μm的方式均勻地進行塗佈後,在120℃下進行加熱乾燥並去除溶媒。如此,於形成三層聚醯胺酸層後,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備多層聚醯亞胺膜A-1(CTE:22 ppm/K、吸濕率:0.54重量%、介電常數:3.58、介電正切:0.0031)。 [Example A-1] After the polyamic acid solution A-1 is uniformly applied to one side of an electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 0.6 μm) so that the thickness after curing becomes approximately 2 μm to 3 μm , heat-dried at 120° C. to remove the solvent. Next, the polyamic acid solution A-15 was uniformly applied thereon so that the thickness after curing was about 21 μm, and heat-dried at 120° C. to remove the solvent. Furthermore, polyamic-acid solution A-1 was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, and it heat-dried at 120 degreeC, and removed a solvent. In this way, after forming three layers of polyamic acid layers, stepwise heat treatment is carried out from 120°C to 360°C within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a multilayer polyimide film A-1 (CTE: 22 ppm/K, moisture absorption rate: 0.54% by weight, dielectric constant : 3.58, dielectric tangent: 0.0031).

[實施例A-2~實施例A-21、參考例A-1~參考例A-2] 除了使用表1~表4中所示的聚醯胺酸溶液以外,與實施例A-1同樣地獲得實施例A-2~實施例A-21、參考例A-1~參考例A-2的多層聚醯亞胺膜A-2~多層聚醯亞胺膜A-23。求出所得的多層聚醯亞胺膜A-2~多層聚醯亞胺膜A-23的CTE、吸濕率、介電常數、介電正切。將各測定結果示於表1~表4中。 [Example A-2 to Example A-21, Reference Example A-1 to Reference Example A-2] Example A-2 to Example A-21, Reference Example A-1 to Reference Example A-2 were obtained in the same manner as in Example A-1, except that the polyamic acid solutions shown in Tables 1 to 4 were used. Multilayer polyimide film A-2 to multilayer polyimide film A-23. The CTE, moisture absorption rate, dielectric constant, and dielectric tangent of the obtained multilayer polyimide films A-2 to A-23 were determined. Each measurement result is shown in Table 1-Table 4.

[表1]    實施例 A-2 實施例 A-3 實施例 A-4 實施例 A-5 實施例 A-6 實施例 A-7 多層聚醯亞胺膜的種類 A-2 A-3 A-4 A-5 A-6 A-7 多層聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 A-2 A-3 A-4 A-5 A-6 A-7 非熱塑性聚醯亞胺層 A-15 A-15 A-15 A-15 A-15 A-15 熱塑性聚醯亞胺層 A-2 A-3 A-4 A-5 A-6 A-7 CTE[ppm/K] 22 22 22 22 22 22 吸濕率[重量%] 0.54 0.54 0.53 0.53 0.53 0.54 介電常數(10 GHz) 3.57 3.58 3.58 3.58 3.59 3.60 介電正切(10 GHz) 0.0031 0.0031 0.0030 0.0030 0.0030 0.0031 [Table 1] Example A-2 Example A-3 Example A-4 Example A-5 Example A-6 Example A-7 Types of multilayer polyimide film A-2 A-3 A-4 A-5 A-6 A-7 Types of Polyamide Acid Solutions Used in Multilayer Polyimide Films thermoplastic polyimide layer A-2 A-3 A-4 A-5 A-6 A-7 Non-thermoplastic polyimide layer A-15 A-15 A-15 A-15 A-15 A-15 thermoplastic polyimide layer A-2 A-3 A-4 A-5 A-6 A-7 CTE[ppm/K] twenty two twenty two twenty two twenty two twenty two twenty two Moisture absorption rate [weight%] 0.54 0.54 0.53 0.53 0.53 0.54 Dielectric constant (10 GHz) 3.57 3.58 3.58 3.58 3.59 3.60 Dielectric tangent (10 GHz) 0.0031 0.0031 0.0030 0.0030 0.0030 0.0031

[表2]    實施例 A-8 實施例 A-9 實施例 A-10 實施例 A-11 實施例 A-12 實施例 A-13 多層聚醯亞胺膜的種類 A-8 A-9 A-10 A-11 A-12 A-13 多層聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 A-8 A-9 A-10 A-11 A-4 A-4 非熱塑性聚醯亞胺層 A-15 A-15 A-15 A-15 A-12 A-13 熱塑性聚醯亞胺層 A-8 A-9 A-10 A-11 A-4 A-4 CTE[ppm/K] 22 22 22 22 20 22 吸濕率[重量%] 0.54 0.54 0.55 0.55 0.53 0.58 介電常數(10 GHz) 3.59 3.62 3.58 3.57 3.40 3.43 介電正切(10 GHz) 0.0031 0.0031 0.0032 0.0031 0.0028 0.0035 [Table 2] Example A-8 Example A-9 Example A-10 Example A-11 Example A-12 Example A-13 Types of multilayer polyimide film A-8 A-9 A-10 A-11 A-12 A-13 Types of Polyamide Acid Solutions Used in Multilayer Polyimide Films thermoplastic polyimide layer A-8 A-9 A-10 A-11 A-4 A-4 Non-thermoplastic polyimide layer A-15 A-15 A-15 A-15 A-12 A-13 thermoplastic polyimide layer A-8 A-9 A-10 A-11 A-4 A-4 CTE[ppm/K] twenty two twenty two twenty two twenty two 20 twenty two Moisture absorption rate [weight%] 0.54 0.54 0.55 0.55 0.53 0.58 Dielectric constant (10 GHz) 3.59 3.62 3.58 3.57 3.40 3.43 Dielectric tangent (10 GHz) 0.0031 0.0031 0.0032 0.0031 0.0028 0.0035

[表3]    實施例 A-14 實施例 A-15 實施例 A-16 實施例 A-17 實施例 A-18 實施例 A-19 多層聚醯亞胺膜的種類 A-14 A-15 A-16 A-17 A-18 A-19 多層聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 A-4 A-4 A-4 A-4 A-4 A-4 非熱塑性聚醯亞胺層 A-14 A-16 A-17 A-18 A-19 A-20 熱塑性聚醯亞胺層 A-4 A-4 A-4 A-4 A-4 A-4 CTE[ppm/K] 22 22 22 22 19 22 吸濕率[重量%] 0.56 0.54 0.52 0.54 0.53 0.56 介電常數(10 GHz) 3.38 3.57 3.48 3.46 3.48 3.52 介電正切(10 GHz) 0.0034 0.0031 0.0033 0.0030 0.0030 0.0035 [table 3] Example A-14 Example A-15 Example A-16 Example A-17 Example A-18 Example A-19 Types of multilayer polyimide film A-14 A-15 A-16 A-17 A-18 A-19 Types of Polyamide Acid Solutions Used in Multilayer Polyimide Films thermoplastic polyimide layer A-4 A-4 A-4 A-4 A-4 A-4 Non-thermoplastic polyimide layer A-14 A-16 A-17 A-18 A-19 A-20 thermoplastic polyimide layer A-4 A-4 A-4 A-4 A-4 A-4 CTE[ppm/K] twenty two twenty two twenty two twenty two 19 twenty two Moisture absorption rate [weight%] 0.56 0.54 0.52 0.54 0.53 0.56 Dielectric constant (10 GHz) 3.38 3.57 3.48 3.46 3.48 3.52 Dielectric tangent (10 GHz) 0.0034 0.0031 0.0033 0.0030 0.0030 0.0035

[表4]    實施例 A-20 實施例 A-21 參考例 A-1 參考例 A-2 多層聚醯亞胺膜的種類 A-20 A-21 A-22 A-23 多層聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 A-4 A-4 A-4 A-4 非熱塑性聚醯亞胺層 A-21 A-22 A-23 A-24 熱塑性聚醯亞胺層 A-4 A-4 A-4 A-4 CTE[ppm/K] 22 28 32 18 吸濕率[重量%] 0.59 0.53 0.54 0.70 介電常數(10 GHz) 3.85 3.56 3.42 3.54 介電正切(10 GHz) 0.0037 0.0030 0.0032 0.0050 [Table 4] Example A-20 Example A-21 Reference example A-1 Reference example A-2 Types of multilayer polyimide film A-20 A-21 A-22 A-23 Types of Polyamide Acid Solutions Used in Multilayer Polyimide Films thermoplastic polyimide layer A-4 A-4 A-4 A-4 Non-thermoplastic polyimide layer A-21 A-22 A-23 A-24 thermoplastic polyimide layer A-4 A-4 A-4 A-4 CTE[ppm/K] twenty two 28 32 18 Moisture absorption rate [weight%] 0.59 0.53 0.54 0.70 Dielectric constant (10 GHz) 3.85 3.56 3.42 3.54 Dielectric tangent (10 GHz) 0.0037 0.0030 0.0032 0.0050

[實施例A-22~實施例A-23] 除了使用表5中所示的聚醯胺酸溶液以外,與實施例A-1同樣地獲得實施例A-22~實施例A-23的多層聚醯亞胺膜A-24~多層聚醯亞胺膜A-25。求出所得的多層聚醯亞胺膜A-24~多層聚醯亞胺膜A-25的CTE、吸濕率、介電常數、介電正切。將各測定結果示於表5中。 [Example A-22 to Example A-23] Except for using the polyamic acid solution shown in Table 5, the multilayer polyimide film A-24 to the multilayer polyimide film of Example A-22 to Example A-23 were obtained in the same manner as in Example A-1. Amine film A-25. The CTE, moisture absorption rate, dielectric constant, and dielectric tangent of the obtained multilayer polyimide films A-24 to A-25 were determined. Each measurement result is shown in Table 5.

[表5]    實施例 A-22 實施例 A-23 多層聚醯亞胺膜的種類 A-24 A-25 多層聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 A-4 A-4 非熱塑性聚醯亞胺層 A-25 A-26 熱塑性聚醯亞胺層 A-4 A-4 CTE[ppm/K] 17 24 吸濕率[重量%] 0.54 0.46 介電常數(10 GHz) 3.48 3.43 介電正切(10 GHz) 0.0034 0.0030 [table 5] Example A-22 Example A-23 Types of multilayer polyimide film A-24 A-25 Types of Polyamide Acid Solutions Used in Multilayer Polyimide Films thermoplastic polyimide layer A-4 A-4 Non-thermoplastic polyimide layer A-25 A-26 thermoplastic polyimide layer A-4 A-4 CTE[ppm/K] 17 twenty four Moisture absorption rate [weight%] 0.54 0.46 Dielectric constant (10 GHz) 3.48 3.43 Dielectric tangent (10 GHz) 0.0034 0.0030

(合成例B-1) 於氮氣流下,在反應槽中投入66.727重量份的m-TB(0.314莫耳份)及520.681重量份的TPE-R(1.781莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加46.620重量份的PMDA(0.214莫耳份)及565.972重量份的BPDA(1.924莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-1。聚醯胺酸溶液B-1的溶液黏度為1,420 cps。 (Synthesis Example B-1) Under a nitrogen flow, 66.727 parts by weight of m-TB (0.314 parts by mole) and 520.681 parts by weight of TPE-R (1.781 parts by mole) and the amount of 12 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 46.620 parts by weight of PMDA (0.214 mol parts) and 565.972 parts by weight of BPDA (1.924 mol parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -1. The solution viscosity of polyamide acid solution B-1 is 1,420 cps.

其次,於將聚醯胺酸溶液B-1以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-1(熱塑性、Tg:256℃、吸濕率:0.36重量%)。另外,構成聚醯亞胺膜B-1的聚醯亞胺的醯亞胺基濃度為26.4重量%。Next, after the polyamic acid solution B-1 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-1 (thermoplasticity, Tg: 256° C., moisture absorption rate: 0.36% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-1 was 26.4% by weight.

(合成例B-2) 於氮氣流下,在反應槽中投入22.538重量份的m-TB(0.106莫耳份)及589.682重量份的TPE-R(2.017莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加141.722重量份的PMDA(0.650莫耳份)及446.058重量份的BPDA(1.516莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-2。聚醯胺酸溶液B-2的溶液黏度為1,510 cps。 (Synthesis Example B-2) Under a nitrogen flow, 22.538 parts by weight of m-TB (0.106 parts by mole) and 589.682 parts by weight of TPE-R (2.017 parts by mole) and the amount of 12 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 141.722 parts by weight of PMDA (0.650 mole parts) and 446.058 parts by weight of BPDA (1.516 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -2. The solution viscosity of polyamide acid solution B-2 is 1,510 cps.

其次,於將聚醯胺酸溶液B-2以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-2(熱塑性、Tg:242℃、吸濕率:0.35重量%)。另外,構成聚醯亞胺膜B-2的聚醯亞胺的醯亞胺基濃度為26.5重量%。Next, after the polyamic acid solution B-2 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-2 (thermoplasticity, Tg: 242° C., moisture absorption rate: 0.35% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-2 was 26.5% by weight.

(合成例B-3) 於氮氣流下,在反應槽中投入45.398重量份的m-TB(0.214莫耳份)及562.630重量份的TPE-R(1.925莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加142.733重量份的PMDA(0.654莫耳份)及449.239重量份的BPDA(1.527莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-3。聚醯胺酸溶液B-3的溶液黏度為1,550 cps。 (Synthesis Example B-3) Under a nitrogen flow, 45.398 parts by weight of m-TB (0.214 parts by mole) and 562.630 parts by weight of TPE-R (1.925 parts by mole) and the concentration of the solid content after polymerization became 12% by weight. DMAc, stirred and dissolved at room temperature. Next, after adding 142.733 parts by weight of PMDA (0.654 parts by mole) and 449.239 parts by weight of BPDA (1.527 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -3. The solution viscosity of polyamide acid solution B-3 is 1,550 cps.

其次,於將聚醯胺酸溶液B-3以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-3(熱塑性、Tg:240℃、吸濕率:0.31重量%)。另外,構成聚醯亞胺膜B-3的聚醯亞胺的醯亞胺基濃度為26.9重量%。Next, after the polyamic acid solution B-3 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film B-3 (thermoplasticity, Tg: 240° C., moisture absorption rate: 0.31% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-3 was 26.9% by weight.

(合成例B-4) 於氮氣流下,在反應槽中投入68.586重量份的m-TB(0.323莫耳份)及535.190重量份的TPE-R(1.831莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加143.758重量份的PMDA(0.659莫耳份)及452.466重量份的BPDA(1.538莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-4。聚醯胺酸溶液B-4的溶液黏度為1,580 cps。 (Synthesis Example B-4) Under a nitrogen stream, 68.586 parts by weight of m-TB (0.323 parts by mole) and 535.190 parts by weight of TPE-R (1.831 parts by mole) and the concentration of the solid content after polymerization became 12% by weight. DMAc, stirred and dissolved at room temperature. Next, after adding 143.758 parts by weight of PMDA (0.659 mole parts) and 452.466 parts by weight of BPDA (1.538 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -4. The solution viscosity of polyamide acid solution B-4 is 1,580 cps.

其次,於將聚醯胺酸溶液B-4以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-4(熱塑性、Tg:240℃、吸濕率:0.29重量%)。另外,構成聚醯亞胺膜B-4的聚醯亞胺的醯亞胺基濃度為27.1重量%。Next, after the polyamic acid solution B-4 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-4 (thermoplasticity, Tg: 240° C., moisture absorption rate: 0.29% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-4 was 27.1% by weight.

(合成例B-5) 於氮氣流下,在反應槽中投入92.110重量份的m-TB(0.434莫耳份)及507.352重量份的TPE-R(1.736莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加144.798重量份的PMDA(0.664莫耳份)及455.740重量份的BPDA(1.549莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-5。聚醯胺酸溶液B-5的溶液黏度為1,610 cps。 (Synthesis Example B-5) Under nitrogen flow, 92.110 parts by weight of m-TB (0.434 mole parts) and 507.352 parts by weight of TPE-R (1.736 mole parts) and the amount of solid content concentration after polymerization to 12% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 144.798 parts by weight of PMDA (0.664 parts by mole) and 455.740 parts by weight of BPDA (1.549 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -5. The solution viscosity of polyamide acid solution B-5 is 1,610 cps.

其次,於將聚醯胺酸溶液B-5以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-5(熱塑性、Tg:244℃、吸濕率:0.27重量%)。另外,構成聚醯亞胺膜B-5的聚醯亞胺的醯亞胺基濃度為27.4重量%。Next, after the polyamic acid solution B-5 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-5 (thermoplasticity, Tg: 244° C., moisture absorption rate: 0.27% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-5 was 27.4% by weight.

(合成例B-6) 於氮氣流下,在反應槽中投入140.193重量份的m-TB(0.660莫耳份)及450.451重量份的TPE-R(1.541莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加146.924重量份的PMDA(0.674莫耳份)及462.431重量份的BPDA(1.572莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-6。聚醯胺酸溶液B-6的溶液黏度為1,720 cps。 (Synthesis Example B-6) Under nitrogen flow, 140.193 parts by weight of m-TB (0.660 mol parts) and 450.451 parts by weight of TPE-R (1.541 mol parts) and the amount of solid content concentration after polymerization to 12% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 146.924 parts by weight of PMDA (0.674 mole parts) and 462.431 parts by weight of BPDA (1.572 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -6. The solution viscosity of polyamide acid solution B-6 is 1,720 cps.

其次,於將聚醯胺酸溶液B-6以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-6(熱塑性、Tg:248℃、吸濕率:0.27重量%)。另外,構成聚醯亞胺膜B-6的聚醯亞胺的醯亞胺基濃度為27.8重量%。Next, after the polyamic acid solution B-6 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-6 (thermoplasticity, Tg: 248° C., moisture absorption rate: 0.27% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-6 was 27.8% by weight.

(合成例B-7) 於氮氣流下,在反應槽中投入73.427重量份的APAB(0.322莫耳份)及532.900重量份的TPE-R(1.823莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加143.143重量份的PMDA(0.656莫耳份)及450.530重量份的BPDA(1.531莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-7。聚醯胺酸溶液B-7的溶液黏度為1,280 cps。 (Synthesis Example B-7) Under a nitrogen stream, 73.427 parts by weight of APAB (0.322 parts by mole) and 532.900 parts by weight of TPE-R (1.823 parts by mole) and DMAc in an amount of 12 weight percent of the solid content concentration after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 143.143 parts by weight of PMDA (0.656 mole parts) and 450.530 parts by weight of BPDA (1.531 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -7. The solution viscosity of polyamide acid solution B-7 is 1,280 cps.

其次,於將聚醯胺酸溶液B-7以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-7(熱塑性、Tg:239℃、吸濕率:0.31重量%)。另外,構成聚醯亞胺膜B-7的聚醯亞胺的醯亞胺基濃度為27.0重量%。Next, after the polyamic acid solution B-7 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was approximately 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-7 (thermoplasticity, Tg: 239° C., moisture absorption rate: 0.31% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-7 was 27.0% by weight.

(合成例B-8) 於氮氣流下,在反應槽中投入68.586重量份的m-TB(0.323莫耳份)及535.190重量份的APB(1.831莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加143.758重量份的PMDA(0.659莫耳份)及452.466重量份的BPDA(1.538莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-8。聚醯胺酸溶液B-8的溶液黏度為1,190 cps。 (Synthesis Example B-8) Under a nitrogen flow, 68.586 parts by weight of m-TB (0.323 parts by mole) and 535.190 parts by weight of APB (1.831 parts by mole) and DMAc in an amount of 12 weight percent of the solid content concentration after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 143.758 parts by weight of PMDA (0.659 mole parts) and 452.466 parts by weight of BPDA (1.538 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -8. The solution viscosity of polyamide acid solution B-8 is 1,190 cps.

其次,於將聚醯胺酸溶液B-8以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-8(熱塑性、Tg:235℃、吸濕率:0.31重量%)。另外,構成聚醯亞胺膜B-8的聚醯亞胺的醯亞胺基濃度為27.1重量%。Next, after the polyamic acid solution B-8 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-8 (thermoplasticity, Tg: 235° C., moisture absorption rate: 0.31% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-8 was 27.1% by weight.

(合成例B-9) 於氮氣流下,在反應槽中投入58.109重量份的m-TB(0.274莫耳份)及636.745重量份的BAPP(1.551莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加121.798重量份的PMDA(0.558莫耳份)及383.348重量份的BPDA(1.303莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-9。聚醯胺酸溶液B-9的溶液黏度為1,780 cps。 (Synthesis Example B-9) Under a nitrogen stream, 58.109 parts by weight of m-TB (0.274 parts by mole) and 636.745 parts by weight of BAPP (1.551 parts by mole) and DMAc in an amount of 12 parts by weight of solid content after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 121.798 parts by weight of PMDA (0.558 mole parts) and 383.348 parts by weight of BPDA (1.303 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -9. The solution viscosity of polyamide acid solution B-9 is 1,780 cps.

其次,於將聚醯胺酸溶液B-9以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-9(熱塑性、Tg:278℃、吸濕率:0.34重量%)。另外,構成聚醯亞胺膜B-9的聚醯亞胺的醯亞胺基濃度為22.6重量%。Next, after the polyamic acid solution B-9 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film B-9 (thermoplasticity, Tg: 278° C., moisture absorption rate: 0.34% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-9 was 22.6% by weight.

(合成例B-10) 於氮氣流下,在反應槽中投入70.552重量份的m-TB(0.332莫耳份)及550.530重量份的TPE-R(1.883莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加246.465重量份的PMDA(1.130莫耳份)及332.454重量份的BPDA(1.130莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-10。聚醯胺酸溶液B-10的溶液黏度為2,330 cps。 (Synthesis Example B-10) Under a nitrogen flow, 70.552 parts by weight of m-TB (0.332 parts by mole) and 550.530 parts by weight of TPE-R (1.883 parts by mole) and 12 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 246.465 parts by weight of PMDA (1.130 mole parts) and 332.454 parts by weight of BPDA (1.130 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -10. The solution viscosity of polyamide acid solution B-10 is 2,330 cps.

其次,於將聚醯胺酸溶液B-10以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-10(熱塑性、Tg:276℃、吸濕率:0.41重量%)。另外,構成聚醯亞胺膜B-10的聚醯亞胺的醯亞胺基濃度為28.0重量%。Next, after the polyamic acid solution B-10 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-10 (thermoplasticity, Tg: 276° C., moisture absorption rate: 0.41% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-10 was 28.0% by weight.

(合成例B-11) 於氮氣流下,在反應槽中投入616.353重量份的TPE-R(2.108莫耳份)及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加140.726重量份的PMDA(0.645莫耳份)及442.921重量份的BPDA(1.505莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-11。聚醯胺酸溶液B-11的溶液黏度為1,530 cps。 (Synthesis Example B-11) Under a nitrogen flow, 616.353 parts by weight of TPE-R (2.108 parts by mole) and DMAc in an amount to have a solid concentration after polymerization of 12% by weight were charged into the reaction tank, and stirred and dissolved at room temperature. Next, after adding 140.726 parts by weight of PMDA (0.645 mol parts) and 442.921 parts by weight of BPDA (1.505 mol parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -11. The solution viscosity of polyamide acid solution B-11 is 1,530 cps.

其次,於將聚醯胺酸溶液B-11以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-11(熱塑性、Tg:244℃、吸濕率:0.39重量%)。另外,構成聚醯亞胺膜B-11的聚醯亞胺的醯亞胺基濃度為26.5重量%。Next, after the polyamic acid solution B-11 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film B-11 (thermoplasticity, Tg: 244° C., moisture absorption rate: 0.39% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-11 was 26.5% by weight.

(合成例B-12) 於氮氣流下,在反應槽中投入240.725重量份的m-TB(1.134莫耳份)及331.485重量份的TPE-R(1.134莫耳份)以及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加151.369重量份的PMDA(0.694莫耳份)及476.421重量份的BPDA(1.619莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-12。聚醯胺酸溶液B-12的溶液黏度為3,240 cps。 (Synthesis Example B-12) Under a nitrogen flow, 240.725 parts by weight of m-TB (1.134 parts by mole) and 331.485 parts by weight of TPE-R (1.134 parts by mole) and the concentration of the solid content after polymerization became 12% by weight. DMAc, stirred and dissolved at room temperature. Next, after adding 151.369 parts by weight of PMDA (0.694 mol parts) and 476.421 parts by weight of BPDA (1.619 mol parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -12. The solution viscosity of polyamide acid solution B-12 is 3,240 cps.

其次,於將聚醯胺酸溶液B-12以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-12(熱塑性、Tg:260℃、吸濕率:0.28重量%)。另外,構成聚醯亞胺膜B-12的聚醯亞胺的醯亞胺基濃度為28.7重量%。Next, after the polyamic acid solution B-12 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-12 (thermoplasticity, Tg: 260° C., moisture absorption rate: 0.28% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-12 was 28.7% by weight.

(合成例B-13) 於氮氣流下,在反應槽中投入596.920重量份的m-TB(2.812莫耳份)及91.331重量份的TPE-R(0.312莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加268.495重量份的PMDA(1.231莫耳份)及543.255重量份的BPDA(1.846莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-13。聚醯胺酸溶液B-13的溶液黏度為27,310 cps。 (Synthesis Example B-13) Under a nitrogen flow, 596.920 parts by weight of m-TB (2.812 parts by mole) and 91.331 parts by weight of TPE-R (0.312 parts by mole) and 15 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 268.495 parts by weight of PMDA (1.231 mole parts) and 543.255 parts by weight of BPDA (1.846 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -13. The solution viscosity of polyamide acid solution B-13 is 27,310 cps.

其次,於將聚醯胺酸溶液B-13以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-13(非熱塑性、Tg:305℃、吸濕率:0.52重量%)。另外,構成聚醯亞胺膜B-13的聚醯亞胺的醯亞胺基濃度為31.2重量%。Next, after the polyamic acid solution B-13 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-13 (non-thermoplastic, Tg: 305° C., moisture absorption rate: 0.52% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-13 was 31.2% by weight.

(合成例B-14) 於氮氣流下,在反應槽中投入606.387重量份的m-TB(2.856莫耳份)及92.779重量份的TPE-R(0.317莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加340.941重量份的PMDA(1.563莫耳份)及459.892重量份的BPDA(1.563莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-14。聚醯胺酸溶液B-14的溶液黏度為29,100 cps。 (Synthesis Example B-14) Under nitrogen flow, 606.387 parts by weight of m-TB (2.856 mol parts) and 92.779 parts by weight of TPE-R (0.317 mol parts) and the amount of solid content after polymerization to 15% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 340.941 parts by weight of PMDA (1.563 parts by mole) and 459.892 parts by weight of BPDA (1.563 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -14. The solution viscosity of polyamide acid solution B-14 is 29,100 cps.

其次,於將聚醯胺酸溶液B-14以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-14(非熱塑性、Tg:322℃、吸濕率:0.57重量%)。另外,構成聚醯亞胺膜B-14的聚醯亞胺的醯亞胺基濃度為31.8重量%。Next, after the polyamic acid solution B-14 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-14 (non-thermoplastic, Tg: 322° C., moisture absorption rate: 0.57% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-14 was 31.8% by weight.

(合成例B-15) 於氮氣流下,在反應槽中投入685.370重量份的m-TB(3.228莫耳份)及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加346.815重量份的PMDA(1.590莫耳份)及467.815重量份的BPDA(1.590莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-15。聚醯胺酸溶液B-15的溶液黏度為29,900 cps。 (Synthesis Example B-15) Under a nitrogen flow, 685.370 parts by weight of m-TB (3.228 parts by mole) and DMAc in an amount to have a solid content concentration of 15% by weight after polymerization were charged into the reaction tank, and stirred and dissolved at room temperature. Next, after adding 346.815 parts by weight of PMDA (1.590 mole parts) and 467.815 parts by weight of BPDA (1.590 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -15. The solution viscosity of polyamide acid solution B-15 is 29,900 cps.

其次,於將聚醯胺酸溶液B-15以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-15(非熱塑性、Tg:332℃、吸濕率:0.63重量%)。另外,構成聚醯亞胺膜B-15的聚醯亞胺的醯亞胺基濃度為32.4重量%。Next, after the polyamic acid solution B-15 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-15 (non-thermoplastic, Tg: 332° C., moisture absorption rate: 0.63% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-15 was 32.4% by weight.

(合成例B-16) 於氮氣流下,在反應槽中投入603.059重量份的m-TB(2.841莫耳份)、46.135重量份的TPE-Q(0.158莫耳份)及54.368重量份的雙苯胺-M(0.158莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加339.070重量份的PMDA(1.555莫耳份)及457.368重量份的BPDA(1.555莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-16。聚醯胺酸溶液B-16的溶液黏度為29,800 cps。 (Synthesis Example B-16) Under nitrogen flow, put 603.059 parts by weight of m-TB (2.841 mole parts), 46.135 parts by weight of TPE-Q (0.158 mole parts) and 54.368 parts by weight of dianiline-M (0.158 mole parts ) and DMAc in such an amount that the solid content concentration after polymerization becomes 15% by weight were stirred and dissolved at room temperature. Next, after adding 339.070 parts by weight of PMDA (1.555 parts by mole) and 457.368 parts by weight of BPDA (1.555 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -16. The solution viscosity of polyamide acid solution B-16 is 29,800 cps.

其次,於將聚醯胺酸溶液B-16以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-16(非熱塑性、Tg:322℃、吸濕率:0.61重量%)。另外,構成聚醯亞胺膜B-16的聚醯亞胺的醯亞胺基濃度為31.6重量%。Next, after the polyamic acid solution B-16 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-16 (non-thermoplastic, Tg: 322° C., moisture absorption rate: 0.61% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-16 was 31.6% by weight.

(合成例B-17) 於氮氣流下,在反應槽中投入598.899重量份的m-TB(2.821莫耳份)、45.817重量份的TPE-Q(0.157莫耳份)及64.339重量份的BAPP(0.157莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加336.731重量份的PMDA(1.544莫耳份)及454.214重量份的BPDA(1.544莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-17。聚醯胺酸溶液B-17的溶液黏度為29,200 cps。 (Synthesis Example B-17) Under nitrogen flow, 598.899 parts by weight of m-TB (2.821 parts by mole), 45.817 parts by weight of TPE-Q (0.157 parts by mole) and 64.339 parts by weight of BAPP (0.157 parts by mole) were put into the reaction tank and polymerized DMAc in an amount having a solid content concentration of 15% by weight was stirred and dissolved at room temperature. Next, after adding 336.731 parts by weight of PMDA (1.544 parts by mole) and 454.214 parts by weight of BPDA (1.544 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -17. The solution viscosity of polyamide acid solution B-17 is 29,200 cps.

其次,於將聚醯胺酸溶液B-17以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-17(非熱塑性、Tg:324℃、吸濕率:0.58重量%)。另外,構成聚醯亞胺膜B-17的聚醯亞胺的醯亞胺基濃度為31.4重量%。Next, after the polyamic acid solution B-17 was uniformly applied to one side of the electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-17 (non-thermoplastic, Tg: 324° C., moisture absorption rate: 0.58% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-17 was 31.4% by weight.

(合成例B-18) 於氮氣流下,在反應槽中投入606.387重量份的m-TB(2.856莫耳份)及92.779重量份的TPE-Q(0.317莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加340.941重量份的PMDA(1.563莫耳份)及459.892重量份的BPDA(1.563莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-18。聚醯胺酸溶液B-18的溶液黏度為32,800 cps。 (Synthesis Example B-18) Under nitrogen flow, 606.387 parts by weight of m-TB (2.856 mole parts) and 92.779 parts by weight of TPE-Q (0.317 mole parts) and the amount of solid content concentration after polymerization to 15% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 340.941 parts by weight of PMDA (1.563 parts by mole) and 459.892 parts by weight of BPDA (1.563 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -18. The solution viscosity of polyamide acid solution B-18 is 32,800 cps.

其次,於將聚醯胺酸溶液B-18以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-18(非熱塑性、Tg:330℃、吸濕率:0.59重量%)。另外,構成聚醯亞胺膜B-18的聚醯亞胺的醯亞胺基濃度為31.8重量%。Next, after the polyamic acid solution B-18 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-18 (non-thermoplastic, Tg: 330° C., moisture absorption rate: 0.59% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-18 was 31.8% by weight.

(合成例B-19) 於氮氣流下,在反應槽中投入616.159重量份的m-TB(2.902莫耳份)及94.275重量份的TPE-R(0.322莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加415.723重量份的PMDA(1.906莫耳份)及373.843重量份的BPDA(1.271莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-19。聚醯胺酸溶液B-19的溶液黏度為31,500 cps。 (Synthesis Example B-19) Under a nitrogen flow, 616.159 parts by weight of m-TB (2.902 parts by mole) and 94.275 parts by weight of TPE-R (0.322 parts by mole) and an amount of 15 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 415.723 parts by weight of PMDA (1.906 mole parts) and 373.843 parts by weight of BPDA (1.271 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -19. The solution viscosity of polyamide acid solution B-19 is 31,500 cps.

其次,於將聚醯胺酸溶液B-19以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-19(非熱塑性、Tg:342℃、吸濕率:0.56重量%)。另外,構成聚醯亞胺膜B-19的聚醯亞胺的醯亞胺基濃度為32.3重量%。Next, polyamic acid solution B-19 was uniformly applied to one side of a 12-μm-thick electrodeposited copper foil (surface roughness Rz: 2.1 μm) so that the thickness after curing was approximately 25 μm. Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film B-19 (non-thermoplastic, Tg: 342° C., moisture absorption rate: 0.56% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-19 was 32.3% by weight.

(合成例B-20) 於氮氣流下,在反應槽中投入626.252重量份的m-TB(2.950莫耳份)及95.819重量份的TPE-R(0.328莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加492.954重量份的PMDA(2.260莫耳份)及284.975重量份的BPDA(0.969莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-20。聚醯胺酸溶液B-20的溶液黏度為34,100 cps。 (Synthesis Example B-20) Under nitrogen flow, 626.252 parts by weight of m-TB (2.950 mole parts) and 95.819 parts by weight of TPE-R (0.328 mole parts) and the amount of solid content concentration after polymerization to 15% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 492.954 parts by weight of PMDA (2.260 mole parts) and 284.975 parts by weight of BPDA (0.969 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to obtain polyamic acid solution B -20. The solution viscosity of polyamide acid solution B-20 is 34,100 cps.

其次,於將聚醯胺酸溶液B-20以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-20(非熱塑性、Tg:364℃、吸濕率:0.68重量%)。另外,構成聚醯亞胺膜B-20的聚醯亞胺的醯亞胺基濃度為32.9重量%。Next, after the polyamic acid solution B-20 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was etched away using an aqueous solution of ferric chloride to prepare a polyimide film B-20 (non-thermoplastic, Tg: 364° C., moisture absorption rate: 0.68% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-20 was 32.9% by weight.

(合成例B-21) 於氮氣流下,在反應槽中投入517.831重量份的m-TB(2.439莫耳份)及79.230重量份的TPE-R(0.271莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加291.151重量份的PMDA(1.335莫耳份)及611.788重量份的TAHQ(1.335莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-21。聚醯胺酸溶液B-21的溶液黏度為33,200 cps。 (Synthesis Example B-21) Under nitrogen flow, 517.831 parts by weight of m-TB (2.439 parts by mole) and 79.230 parts by weight of TPE-R (0.271 parts by mole) and the amount of solid content concentration after polymerization to 15% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 291.151 parts by weight of PMDA (1.335 parts by mole) and 611.788 parts by weight of TAHQ (1.335 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -twenty one. The solution viscosity of polyamide acid solution B-21 is 33,200 cps.

其次,於將聚醯胺酸溶液B-21以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-21(非熱塑性、Tg:296℃、吸濕率:0.54重量%)。另外,構成聚醯亞胺膜B-21的聚醯亞胺的醯亞胺基濃度為26.8重量%。Next, after the polyamic acid solution B-21 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous ferric chloride solution to prepare a polyimide film B-21 (non-thermoplastic, Tg: 296° C., moisture absorption rate: 0.54% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-21 was 26.8% by weight.

(合成例B-22) 於氮氣流下,在反應槽中投入587.744重量份的m-TB(2.769莫耳份)及89.927重量份的TPE-R(0.308莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加198.275重量份的PMDA(0.909莫耳份)及624.054重量份的BPDA(2.121莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-22。聚醯胺酸溶液B-22的溶液黏度為26,800 cps。 (Synthesis Example B-22) Under a nitrogen flow, 587.744 parts by weight of m-TB (2.769 parts by mole) and 89.927 parts by weight of TPE-R (0.308 parts by mole) and the amount of 15% by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 198.275 parts by weight of PMDA (0.909 parts by mole) and 624.054 parts by weight of BPDA (2.121 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -twenty two. The solution viscosity of polyamide acid solution B-22 is 26,800 cps.

其次,於將聚醯胺酸溶液B-22以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-22(非熱塑性、Tg:291℃、吸濕率:0.59重量%)。另外,構成聚醯亞胺膜B-22的聚醯亞胺的醯亞胺基濃度為30.7重量%。Next, after the polyamic acid solution B-22 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-22 (non-thermoplastic, Tg: 291° C., moisture absorption rate: 0.59% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-22 was 30.7% by weight.

(合成例B-23) 於氮氣流下,在反應槽中投入456.183重量份的m-TB(2.149莫耳份)及269.219重量份的TPE-R(0.921莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加329.772重量份的PMDA(1.512莫耳份)及444.826重量份的BPDA(1.512莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-23。聚醯胺酸溶液B-23的溶液黏度為26,400 cps。 (Synthesis Example B-23) Under nitrogen flow, 456.183 parts by weight of m-TB (2.149 parts by mole) and 269.219 parts by weight of TPE-R (0.921 parts by mole) and the amount of 15% by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 329.772 parts by weight of PMDA (1.512 parts by mole) and 444.826 parts by weight of BPDA (1.512 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -twenty three. The solution viscosity of polyamide acid solution B-23 is 26,400 cps.

其次,於將聚醯胺酸溶液B-23以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-23(非熱塑性、Tg:285℃、吸濕率:0.53重量%)。另外,構成聚醯亞胺膜B-23的聚醯亞胺的醯亞胺基濃度為30.7重量%。Next, after the polyamic acid solution B-23 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-23 (non-thermoplastic, Tg: 285° C., moisture absorption rate: 0.53% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-23 was 30.7% by weight.

(合成例B-24) 於氮氣流下,在反應槽中投入720.230重量份的m-TB(3.393莫耳份)及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加583.127重量份的PMDA(2.673莫耳份)及196.644重量份的BPDA(0.668莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而獲得聚醯胺酸溶液B-24。聚醯胺酸溶液B-24的溶液黏度為33,600 cps。 (Synthesis Example B-24) Under nitrogen flow, 720.230 parts by weight of m-TB (3.393 parts by mole) and DMAc in an amount of 15% by weight of solid content after polymerization were charged into the reaction tank, and stirred and dissolved at room temperature. Next, after adding 583.127 parts by weight of PMDA (2.673 parts by mole) and 196.644 parts by weight of BPDA (0.668 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to obtain polyamic acid solution B -twenty four. The solution viscosity of polyamide acid solution B-24 is 33,600 cps.

其次,於將聚醯胺酸溶液B-24以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:2.1 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。對於所得的金屬張積層板,使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜B-24(非熱塑性、Tg:400℃以上、吸濕率:0.78重量%)。另外,構成聚醯亞胺膜B-24的聚醯亞胺的醯亞胺基濃度為34.2重量%。Next, after the polyamic acid solution B-24 was uniformly applied to one side of the electrodeposited copper foil with a thickness of 12 μm (surface roughness Rz: 2.1 μm) so that the thickness after curing was about 25 μm, Heat drying was performed at 120° C. to remove the solvent. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. For the obtained metal tension laminate, the copper foil was removed by etching using an aqueous solution of ferric chloride to prepare a polyimide film B-24 (non-thermoplastic, Tg: 400° C. or higher, moisture absorption rate: 0.78% by weight). In addition, the imide group concentration of the polyimide constituting the polyimide film B-24 was 34.2% by weight.

[實施例B-1] 使用多歧管式的3層共擠壓多層模具,以聚醯胺酸溶液B-2/聚醯胺酸溶液B-18/聚醯胺酸溶液B-2的順序的三層結構連續擠壓並塗佈於環狀帶形狀的不鏽鋼製的支持基材上,於130℃下進行3分鐘加熱乾燥並去除溶媒。其後,自130℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備熱塑性聚醯亞胺層/非熱塑性聚醯亞胺層/熱塑性聚醯亞胺層的厚度分別為2.0 μm/21 μm/2.0 μm的聚醯亞胺膜B-1'。藉由刀口法將支持基材上的聚醯亞胺膜B-1'剝離,而製備寬度方向的長度為1100 mm的長條狀聚醯亞胺膜B-1。 長條狀聚醯亞胺膜B-1的評價結果為如下所述。 CTE:19 ppm/K 面內延遲(RO):9 nm 寬度方向(TD方向)的面內延遲(RO)的偏差(ΔRO):2 nm 於溫度320℃的環境下、壓力340 MPa/m 2、保持期間15分鐘的加壓前後的面內延遲(RO)的變化量:13 nm 吸濕率:0.56重量% 介電常數(10 GHz):3.56、介電正切(10 GHz):0.0032 [Example B-1] Using a multi-manifold 3-layer co-extrusion multi-layer die, in the order of polyamide acid solution B-2/polyamide acid solution B-18/polyamide acid solution B-2 The three-layer structure was continuously extruded and coated on an endless belt-shaped stainless steel support substrate, and dried by heating at 130° C. for 3 minutes to remove the solvent. Thereafter, staged heat treatment is carried out from 130°C to 360°C to complete the imidization, and the thickness of the prepared thermoplastic polyimide layer/non-thermoplastic polyimide layer/thermoplastic polyimide layer is 2.0 Polyimide membrane B-1' of μm/21 μm/2.0 μm. The polyimide film B-1' on the support substrate was peeled off by the knife-edge method, and the strip-shaped polyimide film B-1 with the length of 1100 mm in the width direction was prepared. The evaluation results of the elongated polyimide film B-1 are as follows. CTE: 19 ppm/K In-plane retardation (RO): 9 nm Deviation (ΔRO) of in-plane retardation (RO) in the width direction (TD direction): 2 nm In an environment with a temperature of 320°C and a pressure of 340 MPa/m 2 , Change in in-plane retardation (RO) before and after pressurization for 15 minutes during holding period: 13 nm Moisture absorption rate: 0.56% by weight Dielectric constant (10 GHz): 3.56, Dielectric tangent (10 GHz): 0.0032

[實施例B-2~實施例B-18、參考例B-1~參考例B-5] 除了使用表6~表9中所示的聚醯胺酸溶液以外,與實施例B-1同樣地獲得實施例B-2~實施例B-18、參考例B-1~參考例B-5的長條狀聚醯亞胺膜B-2~長條狀聚醯亞胺膜B-23。求出所得的長條狀聚醯亞胺膜B-2~長條狀聚醯亞胺膜B-23的CTE、面內延遲(RO)、寬度方向(TD方向)的面內延遲(RO)的偏差(ΔRO)、於溫度320℃的環境下、壓力340 MPa/m 2、保持期間15分鐘的加壓前後的面內延遲(RO)的變化量、吸濕率。將各測定結果示於表6~表9中。 [Example B-2 to Example B-18, Reference Example B-1 to Reference Example B-5] Except for using the polyamic acid solution shown in Table 6 to Table 9, it was the same as Example B-1 The strip-shaped polyimide film B-2 to the strip-shaped polyimide film B-23 of Example B-2 to Example B-18 and Reference Example B-1 to Reference Example B-5 were successfully obtained. Calculate the CTE, in-plane retardation (RO), and in-plane retardation (RO) in the width direction (TD direction) of the obtained long polyimide films B-2 to B-23 Deviation (ΔRO), change in in-plane retardation (RO) before and after pressurization at 320°C, pressure 340 MPa/m 2 , and holding period of 15 minutes, and moisture absorption rate. Each measurement result is shown in Table 6 - Table 9.

[表6]    實施例 B-2 實施例 B-3 實施例 B-4 實施例 B-5 實施例 B-6 實施例 B-7 長條狀聚醯亞胺膜的種類 B-2 B-3 B-4 B-5 B-6 B-7 長條聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-3 B-4 B-5 B-6 B-1 B-7 非熱塑性聚醯亞胺層 B-18 B-18 B-18 B-18 B-18 B-18 熱塑性聚醯亞胺層 B-3 B-4 B-5 B-6 B-1 B-7 CTE[ppm/K] 19 19 19 19 19 19 面內延遲(RO)[nm] 9 10 11 13 9 9 寬度方向(TD方向)的面內延遲(RO)的偏差(⊿RO)[nm] 3 1 2 2 1 1 於溫度320℃的環境下、壓力340 MPa/m 2、保持期間15分鐘的加壓前後的面內延遲(RO)的變化量[nm] 8 4 4 3 6 4 吸濕率[重量%] 0.53 0.52 0.52 0.51 0.53 0.53 介電常數(10 GHz) 3.57 3.57 3.57 3.59 3.57 3.59 介電正切(10 GHz) 0.0032 0.0031 0.0031 0.0031 0.0032 0.0032 [Table 6] Example B-2 Example B-3 Example B-4 Example B-5 Example B-6 Example B-7 Types of long polyimide film B-2 B-3 B-4 B-5 B-6 B-7 Types of Polyamide Acid Solutions Used in Long Polyamide Films thermoplastic polyimide layer B-3 B-4 B-5 B-6 B-1 B-7 Non-thermoplastic polyimide layer B-18 B-18 B-18 B-18 B-18 B-18 thermoplastic polyimide layer B-3 B-4 B-5 B-6 B-1 B-7 CTE[ppm/K] 19 19 19 19 19 19 In-plane retardation (RO) [nm] 9 10 11 13 9 9 Deviation of in-plane retardation (RO) in the width direction (TD direction) (⊿RO) [nm] 3 1 2 2 1 1 Change in in-plane retardation (RO) before and after pressurization at a pressure of 340 MPa/m 2 and a holding period of 15 minutes at a temperature of 320°C [nm] 8 4 4 3 6 4 Moisture absorption rate [weight%] 0.53 0.52 0.52 0.51 0.53 0.53 Dielectric constant (10 GHz) 3.57 3.57 3.57 3.59 3.57 3.59 Dielectric tangent (10 GHz) 0.0032 0.0031 0.0031 0.0031 0.0032 0.0032

[表7]    實施例 B-8 實施例 B-9 實施例 B-10 實施例 B-11 實施例 B-12 實施例 B-13 長條狀聚醯亞胺膜的種類 B-8 B-9 B-10 B-11 B-12 B-13 長條聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-8 B-9 B-10 B-4 B-4 B-4 非熱塑性聚醯亞胺層 B-18 B-18 B-18 B-13 B-14 B-15 熱塑性聚醯亞胺層 B-8 B-9 B-10 B-4 B-4 B-4 CTE[ppm/K] 19 19 19 19 19 19 面內延遲(RO)[nm] 10 9 19 6 11 10 寬度方向(TD方向)的面內延遲(RO)的偏差(⊿RO)[nm] 1 1 1 1 2 1 於溫度320℃的環境下、壓力340 MPa/m 2、保持期間15分鐘的加壓前後的面內延遲(RO)的變化量[nm] 9 3 1 16 5 4 吸濕率[重量%] 0.52 0.57 0.58 0.46 0.51 0.55 介電常數(10 GHz) 3.58 3.61 3.57 3.48 3.40 3.43 介電正切(10 GHz) 0.0032 0.0032 0.0033 0.0028 0.0028 0.0035 [Table 7] Example B-8 Example B-9 Example B-10 Example B-11 Example B-12 Example B-13 Types of long polyimide film B-8 B-9 B-10 B-11 B-12 B-13 Types of Polyamide Acid Solutions Used in Long Polyamide Films thermoplastic polyimide layer B-8 B-9 B-10 B-4 B-4 B-4 Non-thermoplastic polyimide layer B-18 B-18 B-18 B-13 B-14 B-15 thermoplastic polyimide layer B-8 B-9 B-10 B-4 B-4 B-4 CTE[ppm/K] 19 19 19 19 19 19 In-plane retardation (RO) [nm] 10 9 19 6 11 10 Deviation of in-plane retardation (RO) in the width direction (TD direction) (⊿RO) [nm] 1 1 1 1 2 1 Change in in-plane retardation (RO) before and after pressurization at a pressure of 340 MPa/m 2 and a holding period of 15 minutes at a temperature of 320°C [nm] 9 3 1 16 5 4 Moisture absorption rate [weight%] 0.52 0.57 0.58 0.46 0.51 0.55 Dielectric constant (10 GHz) 3.58 3.61 3.57 3.48 3.40 3.43 Dielectric tangent (10 GHz) 0.0032 0.0032 0.0033 0.0028 0.0028 0.0035

[表8]    實施例 B-14 實施例 B-15 實施例 B-16 實施例 B-17 實施例 B-18 長條狀聚醯亞胺膜的種類 B-14 B-15 B-16 B-17 B-18 長條聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-4 B-4 B-4 B-4 B-4 非熱塑性聚醯亞胺層 B-16 B-17 B-19 B-20 B-21 熱塑性聚醯亞胺層 B-4 B-4 B-4 B-4 B-4 CTE[ppm/K] 19 19 19 19 19 面內延遲(RO)[nm] 12 11 16 21 10 寬度方向(TD方向)的面內延遲(RO)的偏差(⊿RO)[nm] 2 2 3 1 1 於溫度320℃的環境下、壓力340 MPa/m 2、保持期間15分鐘的加壓前後的面內延遲(RO)的變化量[nm] 4 5 4 2 18 吸濕率[重量%] 0.54 0.51 0.51 0.62 0.54 介電常數(10 GHz) 3.38 3.58 3.57 3.48 3.48 介電正切(10 GHz) 0.0034 0.0030 0.0031 0.0033 0.0042 [Table 8] Example B-14 Example B-15 Example B-16 Example B-17 Example B-18 Types of long polyimide film B-14 B-15 B-16 B-17 B-18 Types of Polyamide Acid Solutions Used in Long Polyamide Films thermoplastic polyimide layer B-4 B-4 B-4 B-4 B-4 Non-thermoplastic polyimide layer B-16 B-17 B-19 B-20 B-21 thermoplastic polyimide layer B-4 B-4 B-4 B-4 B-4 CTE[ppm/K] 19 19 19 19 19 In-plane retardation (RO) [nm] 12 11 16 twenty one 10 Deviation of in-plane retardation (RO) in the width direction (TD direction) (⊿RO) [nm] 2 2 3 1 1 Change in in-plane retardation (RO) before and after pressurization at a pressure of 340 MPa/m 2 and a holding period of 15 minutes at a temperature of 320°C [nm] 4 5 4 2 18 Moisture absorption rate [weight%] 0.54 0.51 0.51 0.62 0.54 Dielectric constant (10 GHz) 3.38 3.58 3.57 3.48 3.48 Dielectric tangent (10 GHz) 0.0034 0.0030 0.0031 0.0033 0.0042

[表9]    參考例 B-1 參考例 B-2 參考例 B-3 參考例 B-4 參考例 B-5 長條狀聚醯亞胺膜的種類 B-19 B-20 B-21 B-22 B-23 長條聚醯亞胺膜中使用的聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-11 B-12 B-4 B-4 B-4 非熱塑性聚醯亞胺層 B-18 B-18 B-22 B-23 B-24 熱塑性聚醯亞胺層 B-11 B-12 B-4 B-4 B-4 CTE[ppm/K] 19 19 28 26 19 面內延遲(RO)[nm] 9 8 10 9 9 寬度方向(TD方向)的面內延遲(RO)的偏差(⊿RO)[nm] 2 2 2 3 2 於溫度320℃的環境下、壓力340 MPa/m 2、保持期間15分鐘的加壓前後的面內延遲(RO)的變化量[nm] 23 3 31 27 2 吸濕率[重量%] 0.59 0.51 0.52 0.50 0.72 介電常數(10 GHz) 3.56 3.60 3.42 3.54 3.54 介電正切(10 GHz) 0.0032 0.0031 0.0032 0.0028 0.0050 [Table 9] Reference example B-1 Reference example B-2 Reference example B-3 Reference example B-4 Reference example B-5 Types of long polyimide film B-19 B-20 B-21 B-22 B-23 Types of Polyamide Acid Solutions Used in Long Polyamide Films thermoplastic polyimide layer B-11 B-12 B-4 B-4 B-4 Non-thermoplastic polyimide layer B-18 B-18 B-22 B-23 B-24 thermoplastic polyimide layer B-11 B-12 B-4 B-4 B-4 CTE[ppm/K] 19 19 28 26 19 In-plane retardation (RO) [nm] 9 8 10 9 9 Deviation of in-plane retardation (RO) in the width direction (TD direction) (⊿RO) [nm] 2 2 2 3 2 Change in in-plane retardation (RO) before and after pressurization at a pressure of 340 MPa/m 2 and a holding period of 15 minutes at a temperature of 320°C [nm] twenty three 3 31 27 2 Moisture absorption rate [weight%] 0.59 0.51 0.52 0.50 0.72 Dielectric constant (10 GHz) 3.56 3.60 3.42 3.54 3.54 Dielectric tangent (10 GHz) 0.0032 0.0031 0.0032 0.0028 0.0050

[實施例B-19] 將聚醯胺酸溶液B-2以硬化後的厚度成為2.0 μm的方式均勻地塗佈於長條狀的銅箔(壓延銅箔、JX金屬股份有限公司製造、商品名:GHY5-93F-HA-V2箔、厚度:12 μm、熱處理後的拉伸彈性係數:18 GPa)的表面,在120℃下進行1分鐘加熱乾燥並去除溶媒。於其上將聚醯胺酸溶液B-18以硬化後的厚度成為21 μm的方式均勻地進行塗佈後,在120℃下進行3分鐘加熱乾燥並去除溶媒。進而,於其上將聚醯胺酸溶液B-2以硬化後的厚度成為2.0 μm的方式均勻地進行塗佈後,在120℃下進行1分鐘加熱乾燥並去除溶媒。其後,自130℃至360℃為止進行階段性的熱處理,完成醯亞胺化,而製備單面銅張積層板B-1。於所述單面銅張積層板B-1的聚醯亞胺層側重疊銅箔,於溫度320℃、壓力340 MPa/m 2的條件下進行15分鐘熱壓接,而製備兩面銅張積層板B-1。 流延面側剝離強度:◎,壓接面側剝離強度:○ [Example B-19] Polyamic acid solution B-2 was uniformly applied to a strip-shaped copper foil (rolled copper foil, manufactured by JX Metal Co., Ltd., commercial product) so that the thickness after curing was 2.0 μm. name: GHY5-93F-HA-V2 foil, thickness: 12 μm, tensile modulus of elasticity after heat treatment: 18 GPa), heat-dry at 120°C for 1 minute to remove the solvent. Polyamic acid solution B-18 was uniformly applied thereon so that the thickness after curing was 21 μm, and then heat-dried at 120° C. for 3 minutes to remove the solvent. Furthermore, polyamic-acid solution B-2 was uniformly apply|coated so that the thickness after hardening might become 2.0 micrometers, and it heat-dried at 120 degreeC for 1 minute, and removed the solvent. Thereafter, stepwise heat treatment was performed from 130° C. to 360° C. to complete imidization, and a single-sided copper tension laminate B-1 was prepared. Lay copper foil on the side of the polyimide layer of the single-sided copper tensioned laminate B-1, and perform thermocompression bonding for 15 minutes at a temperature of 320°C and a pressure of 340 MPa/m2 to prepare a double -sided copper tensioned laminate Board B-1. Peel strength of casting side: ◎, peeling strength of crimping side: ○

[實施例B-20~實施例B-36、參考例B-6~參考例B-10] 除了使用表10~表13中所示的聚醯胺酸溶液以外,與實施例B-19同樣地獲得實施例B-20~實施例B-36、參考例B-6~參考例B-10的兩面銅張積層板B-2~兩面銅張積層板B-23。求出所得的兩面銅張積層板B-2~兩面銅張積層板B-23的流延面側剝離強度、壓接面側剝離強度。將各測定結果示於表10~表13中。 [Example B-20 to Example B-36, Reference Example B-6 to Reference Example B-10] Example B-20 to Example B-36, Reference Example B-6 to Reference Example B-10 were obtained in the same manner as in Example B-19, except that the polyamic acid solutions shown in Tables 10 to 13 were used. Double-sided copper tensioned laminates B-2 to double-sided copper tensioned laminates B-23. The casting surface side peel strength and the crimping surface side peel strength of the obtained double-sided copper tension laminated boards B-2 to B-23 were determined. Each measurement result is shown in Table 10 - Table 13.

[表10]    實施例 B-20 實施例 B-21 實施例 B-22 實施例 B-23 實施例 B-24 實施例 B-25 兩面銅張積層板的種類 B-2 B-3 B-4 B-5 B-6 B-7 聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-3 B-4 B-5 B-6 B-1 B-7 非熱塑性聚醯亞胺層 B-18 B-18 B-18 B-18 B-18 B-18 熱塑性聚醯亞胺層 B-3 B-4 B-5 B-6 B-1 B-7 流延面側剝離強度 壓接面側剝離強度 Δ [Table 10] Example B-20 Example B-21 Example B-22 Example B-23 Example B-24 Example B-25 Types of double-sided copper tension laminates B-2 B-3 B-4 B-5 B-6 B-7 Types of polyamide acid solutions thermoplastic polyimide layer B-3 B-4 B-5 B-6 B-1 B-7 Non-thermoplastic polyimide layer B-18 B-18 B-18 B-18 B-18 B-18 thermoplastic polyimide layer B-3 B-4 B-5 B-6 B-1 B-7 Cast side peel strength Peel strength of crimping side Δ

[表11]    實施例 B-26 實施例 B-27 實施例 B-28 實施例 B-29 實施例 B-30 實施例 B-31 兩面銅張積層板的種類 B-8 B-9 B-10 B-11 B-12 B-13 聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-8 B-9 B-10 B-4 B-4 B-4 非熱塑性聚醯亞胺層 B-18 B-18 B-18 B-13 B-14 B-15 熱塑性聚醯亞胺層 B-8 B-9 B-10 B-4 B-4 B-4 流延面側剝離強度 Δ Δ 壓接面側剝離強度 Δ Δ [Table 11] Example B-26 Example B-27 Example B-28 Example B-29 Example B-30 Example B-31 Types of double-sided copper tension laminates B-8 B-9 B-10 B-11 B-12 B-13 Types of polyamide acid solutions thermoplastic polyimide layer B-8 B-9 B-10 B-4 B-4 B-4 Non-thermoplastic polyimide layer B-18 B-18 B-18 B-13 B-14 B-15 thermoplastic polyimide layer B-8 B-9 B-10 B-4 B-4 B-4 Cast side peel strength Δ Δ Peel strength of crimping side Δ Δ

[表12]    實施例 B-32 實施例 B-33 實施例 B-34 實施例 B-35 實施例 B-36 兩面銅張積層板的種類 B-14 B-15 B-16 B-17 B-18 聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-4 B-4 B-4 B-4 B-4 非熱塑性聚醯亞胺層 B-16 B-17 B-19 B-20 B-21 熱塑性聚醯亞胺層 B-4 B-4 B-4 B-4 B-4 流延面側剝離強度 壓接面側剝離強度 [Table 12] Example B-32 Example B-33 Example B-34 Example B-35 Example B-36 Types of double-sided copper tension laminates B-14 B-15 B-16 B-17 B-18 Types of polyamide acid solutions thermoplastic polyimide layer B-4 B-4 B-4 B-4 B-4 Non-thermoplastic polyimide layer B-16 B-17 B-19 B-20 B-21 thermoplastic polyimide layer B-4 B-4 B-4 B-4 B-4 Cast side peel strength Peel strength of crimping side

[表13]    參考例 B-6 參考例 B-7 參考例 B-8 參考例 B-9 參考例 B-10 兩面銅張積層板的種類 B-19 B-20 B-21 B-22 B-23 聚醯胺酸溶液的種類 熱塑性聚醯亞胺層 B-11 B-12 B-4 B-4 B-4 非熱塑性聚醯亞胺層 B-18 B-18 B-22 B-23 B-24 熱塑性聚醯亞胺層 B-11 B-12 B-4 B-4 B-4 流延面側剝離強度 Δ 壓接面側剝離強度 × [Table 13] Reference Example B-6 Reference Example B-7 Reference Example B-8 Reference Example B-9 Reference Example B-10 Types of double-sided copper tension laminates B-19 B-20 B-21 B-22 B-23 Types of polyamide acid solutions thermoplastic polyimide layer B-11 B-12 B-4 B-4 B-4 Non-thermoplastic polyimide layer B-18 B-18 B-22 B-23 B-24 thermoplastic polyimide layer B-11 B-12 B-4 B-4 B-4 Cast side peel strength Δ Peel strength of crimping side x

(合成例C-1) 於氮氣流下,在反應槽中投入606.387重量份的m-TB(2.856莫耳份)及92.779重量份的TPE-R(0.317莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加340.941重量份的PMDA(1.563莫耳份)及459.892重量份的BPDA(1.563莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-1。聚醯胺酸溶液C-1的溶液黏度為29,100 cps。 (Synthesis Example C-1) Under nitrogen flow, 606.387 parts by weight of m-TB (2.856 mol parts) and 92.779 parts by weight of TPE-R (0.317 mol parts) and the amount of solid content concentration after polymerization to 15% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 340.941 parts by weight of PMDA (1.563 parts by mole) and 459.892 parts by weight of BPDA (1.563 parts by mole), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -1. The solution viscosity of polyamide acid solution C-1 is 29,100 cps.

(合成例C-2) 於氮氣流下,在反應槽中投入606.387重量份的m-TB(2.856莫耳份)及92.779重量份的TPE-Q(0.317莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加340.941重量份的PMDA(1.563莫耳份)及459.892重量份的BPDA(1.563莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-2。聚醯胺酸溶液C-2的溶液黏度為32,800 cps。 (Synthesis Example C-2) Under nitrogen flow, 606.387 parts by weight of m-TB (2.856 mole parts) and 92.779 parts by weight of TPE-Q (0.317 mole parts) and the amount of solid content concentration after polymerization to 15% by weight were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 340.941 parts by weight of PMDA (1.563 parts by mole) and 459.892 parts by weight of BPDA (1.563 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to prepare polyamic acid solution C -2. The solution viscosity of polyamide acid solution C-2 is 32,800 cps.

(合成例C-3) 於氮氣流下,在反應槽中投入616.159重量份的m-TB(2.902莫耳份)及94.275重量份的TPE-R(0.322莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加415.723重量份的PMDA(1.906莫耳份)及373.843重量份的BPDA(1.271莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-3。聚醯胺酸溶液C-3的溶液黏度為31,500 cps。 (Synthesis Example C-3) Under a nitrogen flow, 616.159 parts by weight of m-TB (2.902 parts by mole) and 94.275 parts by weight of TPE-R (0.322 parts by mole) and an amount of 15 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 415.723 parts by weight of PMDA (1.906 mole parts) and 373.843 parts by weight of BPDA (1.271 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -3. The solution viscosity of polyamide acid solution C-3 is 31,500 cps.

(合成例C-4) 於氮氣流下,在反應槽中投入637.503重量份的m-TB(3.003莫耳份)及64.882重量份的BAPP(0.158莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加339.571重量份的PMDA(1.557莫耳份)及458.044重量份的BPDA(1.557莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-4。聚醯胺酸溶液C-4的溶液黏度為24,100 cps。 (Synthesis Example C-4) Under a nitrogen stream, 637.503 parts by weight of m-TB (3.003 parts by mole) and 64.882 parts by weight of BAPP (0.158 parts by mole) and DMAc in an amount of 15% by weight of the solid concentration after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 339.571 parts by weight of PMDA (1.557 parts by mole) and 458.044 parts by weight of BPDA (1.557 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to prepare polyamic acid solution C -4. The solution viscosity of polyamide acid solution C-4 is 24,100 cps.

(合成例C-5) 於氮氣流下,在反應槽中投入591.594重量份的m-TB(2.787莫耳份)及127.109重量份的BAPP(0.310莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加332.624重量份的PMDA(1.525莫耳份)及448.673重量份的BPDA(1.525莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-5。聚醯胺酸溶液C-5的溶液黏度為23,200 cps。 (Synthesis Example C-5) Under a nitrogen stream, 591.594 parts by weight of m-TB (2.787 parts by mole) and 127.109 parts by weight of BAPP (0.310 parts by mole) and DMAc in an amount of 15% by weight of the solid concentration after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 332.624 parts by weight of PMDA (1.525 mole parts) and 448.673 parts by weight of BPDA (1.525 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -5. The solution viscosity of polyamide acid solution C-5 is 23,200 cps.

(合成例C-6) 於氮氣流下,在反應槽中投入641.968重量份的m-TB(3.024莫耳份)及54.830重量份的雙苯胺-M(0.159莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加341.950重量份的PMDA(1.568莫耳份)及461.252重量份的BPDA(1.568莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-6。聚醯胺酸溶液C-6的溶液黏度為26,500 cps。 (Synthesis Example C-6) Under nitrogen flow, 641.968 parts by weight of m-TB (3.024 parts by mole) and 54.830 parts by weight of dianiline-M (0.159 parts by mole) were put into the reaction tank, and the concentration of the solid content after polymerization became 15% by weight. DMAc was stirred and dissolved at room temperature. Next, after adding 341.950 parts by weight of PMDA (1.568 mole parts) and 461.252 parts by weight of BPDA (1.568 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -6. The solution viscosity of polyamide acid solution C-6 is 26,500 cps.

(合成例C-7) 於氮氣流下,在反應槽中投入538.432重量份的m-TB(2.536莫耳份)及185.359重量份的TPE-R(0.634莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加408.690重量份的PMDA(1.874莫耳份)及367.519重量份的BPDA(1.249莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-7。聚醯胺酸溶液C-7的溶液黏度為31,100 cps。 (Synthesis Example C-7) Under a nitrogen flow, 538.432 parts by weight of m-TB (2.536 parts by mole) and 185.359 parts by weight of TPE-R (0.634 parts by mole) and an amount of 15 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 408.690 parts by weight of PMDA (1.874 parts by mole) and 367.519 parts by weight of BPDA (1.249 parts by mole), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -7. The solution viscosity of polyamide acid solution C-7 is 31,100 cps.

(合成例C-8) 於氮氣流下,在反應槽中投入674.489重量份的m-TB(3.177莫耳份)及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加273.047重量份的PMDA(1.252莫耳份)及552.465重量份的BPDA(1.878莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-8。聚醯胺酸溶液C-8的溶液黏度為26,400 cps。 (Synthesis Example C-8) Under nitrogen flow, 674.489 parts by weight of m-TB (3.177 parts by mole) and DMAc in an amount to have a solid content concentration of 15% by weight after polymerization were charged into the reaction tank, and stirred and dissolved at room temperature. Next, after adding 273.047 parts by weight of PMDA (1.252 mole parts) and 552.465 parts by weight of BPDA (1.878 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -8. The solution viscosity of polyamide acid solution C-8 is 26,400 cps.

(合成例C-9) 於氮氣流下,在反應槽中投入463.290重量份的m-TB(2.182莫耳份)及273.414重量份的TPE-R(0.935莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加401.891重量份的PMDA(1.843莫耳份)及361.405重量份的BPDA(1.228莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-9。聚醯胺酸溶液C-9的溶液黏度為29,000 cps。 (Synthesis Example C-9) Under a nitrogen flow, 463.290 parts by weight of m-TB (2.182 parts by mole) and 273.414 parts by weight of TPE-R (0.935 parts by mole) and the concentration of the solid content after polymerization became 15% by weight. DMAc, stirred and dissolved at room temperature. Next, after adding 401.891 parts by weight of PMDA (1.843 parts by mole) and 361.405 parts by weight of BPDA (1.228 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to prepare polyamic acid solution C -9. The solution viscosity of polyamide acid solution C-9 is 29,000 cps.

(合成例C-10) 於氮氣流下,在反應槽中投入589.033重量份的m-TB(2.775莫耳份)及111.762重量份的APAB(0.490莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加420.798重量份的PMDA(1.929莫耳份)及378.407重量份的BPDA(1.286莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-10。聚醯胺酸溶液C-10的溶液黏度為22,700 cps。 (Synthesis Example C-10) Under a nitrogen flow, 589.033 parts by weight of m-TB (2.775 parts by mole) and 111.762 parts by weight of APAB (0.490 parts by mole) and DMAc in an amount of 15% by weight of the solid concentration after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 420.798 parts by weight of PMDA (1.929 mole parts) and 378.407 parts by weight of BPDA (1.286 mole parts), stirring was continued at room temperature for 3 hours and polymerization was carried out to prepare polyamic acid solution C -10. The solution viscosity of polyamide acid solution C-10 is 22,700 cps.

(合成例C-11) 於氮氣流下,在反應槽中投入500.546重量份的m-TB(2.358莫耳份)及229.756重量份的TPE-R(0.786莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加405.262重量份的PMDA(1.858莫耳份)及364.436重量份的BPDA(1.239莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-11。聚醯胺酸溶液C-11的溶液黏度為29,600 cps。 (Synthesis Example C-11) Under a nitrogen flow, 500.546 parts by weight of m-TB (2.358 parts by mole) and 229.756 parts by weight of TPE-R (0.786 parts by mole) and an amount of 15 parts by weight of solid content after polymerization were put into the reaction tank. DMAc, stirred and dissolved at room temperature. Next, after adding 405.262 parts by weight of PMDA (1.858 mole parts) and 364.436 parts by weight of BPDA (1.239 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -11. The solution viscosity of polyamide acid solution C-11 is 29,600 cps.

(合成例C-12) 於氮氣流下,在反應槽中投入779.571重量份的BAPP(1.899莫耳份)及聚合後的固體成分濃度成為12重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加420.430重量份的PMDA(1.928莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-12。聚醯胺酸溶液C-12的溶液黏度為2,210 cps。 (Synthesis Example C-12) Under a nitrogen stream, 779.571 parts by weight of BAPP (1.899 parts by mole) and DMAc in an amount to have a solid concentration after polymerization of 12% by weight were charged into the reaction tank, and stirred and dissolved at room temperature. Next, after adding 420.430 parts by weight of PMDA (1.928 mole parts), stirring was continued at room temperature for 3 hours and polymerization was carried out to prepare polyamic acid solution C-12. The solution viscosity of polyamide acid solution C-12 is 2,210 cps.

(合成例C-13) 於氮氣流下,在反應槽中投入616.159重量份的m-TB(2.902莫耳份)及94.275重量份的APB(0.322莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加415.723重量份的PMDA(1.906莫耳份)及373.843重量份的BPDA(1.271莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-13。聚醯胺酸溶液C-13的溶液黏度為12,700 cps。 (Synthesis Example C-13) Under a nitrogen stream, 616.159 parts by weight of m-TB (2.902 parts by mole) and 94.275 parts by weight of APB (0.322 parts by mole) and DMAc in an amount of 15% by weight of the solid concentration after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 415.723 parts by weight of PMDA (1.906 mole parts) and 373.843 parts by weight of BPDA (1.271 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -13. The solution viscosity of polyamide acid solution C-13 is 12,700 cps.

(合成例C-14) 於氮氣流下,在反應槽中投入628.877重量份的m-TB(2.962莫耳份)及65.261重量份的3,3'-DAPM(0.329莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加424.303重量份的PMDA(1.945莫耳份)及381.559重量份的BPDA(1.297莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-14。聚醯胺酸溶液C-14的溶液黏度為31,400 cps。 (Synthesis Example C-14) Under nitrogen flow, 628.877 parts by weight of m-TB (2.962 parts by mole) and 65.261 parts by weight of 3,3'-DAPM (0.329 parts by mole) were put into the reaction tank, and the solid content concentration after polymerization became 15% by weight The amount of DMAc was stirred and dissolved at room temperature. Next, after adding 424.303 parts by weight of PMDA (1.945 mole parts) and 381.559 parts by weight of BPDA (1.297 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -14. The solution viscosity of polyamide acid solution C-14 is 31,400 cps.

(合成例C-15) 於氮氣流下,在反應槽中投入613.786重量份的m-TB(2.891莫耳份)、28.652重量份的DTAm(0.161莫耳份)及46.956重量份的TPE-Q(0.161莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加345.102重量份的PMDA(1.582莫耳份)及465.504重量份的BPDA(1.582莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-15。聚醯胺酸溶液C-15的溶液黏度為24,400 cps。 (Synthesis Example C-15) Under nitrogen flow, 613.786 parts by weight of m-TB (2.891 moles), 28.652 parts by weight of DTAm (0.161 parts by moles) and 46.956 parts by weight of TPE-Q (0.161 parts by moles) were put into the reaction tank and polymerized DMAc was stirred and dissolved at room temperature so that the final solid content concentration became 15% by weight. Next, after adding 345.102 weight parts of PMDA (1.582 mole parts) and 465.504 weight parts of BPDA (1.582 mole parts), stirring was continued at room temperature for 3 hours and polymerization was carried out to prepare polyamic acid solution C -15. The solution viscosity of polyamide acid solution C-15 is 24,400 cps.

(合成例C-16) 於氮氣流下,在反應槽中投入607.034重量份的m-TB(2.859莫耳份)、44.840重量份的BAPM(0.159莫耳份)及46.439重量份的TPE-Q(0.159莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加341.305重量份的PMDA(1.565莫耳份)及460.383重量份的BPDA(1.565莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-16。聚醯胺酸溶液C-16的溶液黏度為27,100 cps。 (Synthesis Example C-16) Under nitrogen flow, 607.034 parts by weight of m-TB (2.859 parts by mole), 44.840 parts by weight of BAPM (0.159 parts by mole) and 46.439 parts by weight of TPE-Q (0.159 parts by mole) were put into the reaction tank and polymerized DMAc in an amount having a solid content concentration of 15% by weight was stirred and dissolved at room temperature. Next, after adding 341.305 parts by weight of PMDA (1.565 mole parts) and 460.383 parts by weight of BPDA (1.565 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -16. The solution viscosity of polyamide acid solution C-16 is 27,100 cps.

(合成例C-17) 於氮氣流下,在反應槽中投入603.059重量份的m-TB(2.841莫耳份)、54.368重量份的雙苯胺-P(0.158莫耳份)及46.135重量份的TPE-Q(0.158莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加339.070重量份的PMDA(1.555莫耳份)及457.368重量份的BPDA(1.555莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-17。聚醯胺酸溶液C-17的溶液黏度為29,200 cps。 (Synthesis Example C-17) Under nitrogen flow, 603.059 parts by weight of m-TB (2.841 mole parts), 54.368 parts by weight of dianiline-P (0.158 mole parts) and 46.135 parts by weight of TPE-Q (0.158 mole parts) were put into the reaction tank ) and DMAc in such an amount that the solid content concentration after polymerization becomes 15% by weight were stirred and dissolved at room temperature. Next, after adding 339.070 parts by weight of PMDA (1.555 parts by mole) and 457.368 parts by weight of BPDA (1.555 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to prepare polyamic acid solution C -17. The solution viscosity of polyamide acid solution C-17 is 29,200 cps.

(合成例C-18) 於氮氣流下,在反應槽中投入599.272重量份的m-TB(2.823莫耳份)、63.445重量份的DTBAB(0.157莫耳份)及45.845重量份的TPE-Q(0.157莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加336.941重量份的PMDA(1.545莫耳份)及454.497重量份的BPDA(1.545莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-18。聚醯胺酸溶液C-18的溶液黏度為28,800 cps。 (Synthesis Example C-18) Under nitrogen flow, 599.272 parts by weight of m-TB (2.823 parts by mole), 63.445 parts by weight of DTBAB (0.157 parts by mole) and 45.845 parts by weight of TPE-Q (0.157 parts by mole) were put into the reaction tank and polymerized DMAc in an amount having a solid content concentration of 15% by weight was stirred and dissolved at room temperature. Next, after adding 336.941 parts by weight of PMDA (1.545 parts by mole) and 454.497 parts by weight of BPDA (1.545 parts by mole), continue to stir at room temperature for 3 hours and carry out polymerization reaction to prepare polyamic acid solution C -18. The solution viscosity of polyamide acid solution C-18 is 28,800 cps.

(合成例C-19) 於氮氣流下,在反應槽中投入610.050重量份的m-TB(2.874莫耳份)及52.104重量份的雙苯胺-M(0.151莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加399.526重量份的NTCDA(1.490莫耳份)及438.320重量份的BPDA(1.490莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-19。聚醯胺酸溶液C-19的溶液黏度為29,200 cps。 (Synthesis Example C-19) Under nitrogen flow, 610.050 parts by weight of m-TB (2.874 parts by mole) and 52.104 parts by weight of dianiline-M (0.151 parts by mole) were put into the reaction tank so that the concentration of the solid content after polymerization became 15% by weight. DMAc was stirred and dissolved at room temperature. Next, after adding 399.526 parts by weight of NTCDA (1.490 mol parts) and 438.320 parts by weight of BPDA (1.490 mol parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -19. The solution viscosity of polyamide acid solution C-19 is 29,200 cps.

(合成例C-20) 於氮氣流下,在反應槽中投入560.190重量份的m-TB(2.639莫耳份)及33.503重量份的BAPP(0.082莫耳份)以及聚合後的固體成分濃度成為15重量%的量的DMAc,於室溫下進行攪拌並加以溶解。其次,於添加292.237重量份的PMDA(1.340莫耳份)及614.071重量份的TAHQ(1.340莫耳份)後,在室溫下繼續攪拌3小時並進行聚合反應,而製備聚醯胺酸溶液C-20。聚醯胺酸溶液C-20的溶液黏度為26,100 cps。 (Synthesis Example C-20) Under a nitrogen stream, 560.190 parts by weight of m-TB (2.639 parts by mole) and 33.503 parts by weight of BAPP (0.082 parts by mole) and DMAc in an amount of 15% by weight of the solid concentration after polymerization were put into the reaction tank, Stir and dissolve at room temperature. Next, after adding 292.237 parts by weight of PMDA (1.340 mole parts) and 614.071 parts by weight of TAHQ (1.340 mole parts), stirring was continued for 3 hours at room temperature and polymerization was carried out to prepare polyamic acid solution C -20. The solution viscosity of polyamide acid solution C-20 is 26,100 cps.

[實施例C-1] 於將聚醯胺酸溶液C-1以硬化後的厚度成為約25 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:0.6 μm)後,在120℃下進行加熱乾燥並去除溶媒。進而,於30分鐘以內自120℃至360℃為止進行階段性的熱處理,完成醯亞胺化。使用氯化鐵水溶液來將銅箔蝕刻去除,而製備聚醯亞胺膜C-1(CTE:18.1 ppm/K、Tg:322℃、吸濕率:0.57重量%、霧度:74.5%、膜伸長率:48%、介電常數:3.42、介電正切:0.0028)。 [Example C-1] After the polyamic acid solution C-1 is uniformly applied to one side of a 12 μm thick electrolytic copper foil (surface roughness Rz: 0.6 μm) so that the thickness after hardening becomes about 25 μm, at 120 The drying was carried out at ℃ and the solvent was removed. Furthermore, stepwise heat treatment is performed from 120° C. to 360° C. within 30 minutes to complete imidization. The copper foil was etched and removed using an aqueous ferric chloride solution to prepare polyimide film C-1 (CTE: 18.1 ppm/K, Tg: 322°C, moisture absorption rate: 0.57% by weight, haze: 74.5%, film Elongation: 48%, dielectric constant: 3.42, dielectric tangent: 0.0028).

[實施例C-2~實施例C-9及參考例C-1~參考例C-2] 除了使用表14及表15中所示的聚醯胺酸溶液以外,與實施例C-1同樣地製備聚醯亞胺膜C-2~聚醯亞胺膜C-11。關於聚醯亞胺膜C-2~聚醯亞胺膜C-11,求出CTE、Tg、吸濕率、霧度、膜伸長率、介電常數及介電正切。將該些測定結果示於表14及表15中。 [Example C-2 to Example C-9 and Reference Example C-1 to Reference Example C-2] Except having used the polyamic acid solution shown in Table 14 and Table 15, it carried out similarly to Example C-1, and produced polyimide membrane C-2 - polyimide membrane C-11. For the polyimide films C-2 to C-11, CTE, Tg, moisture absorption, haze, film elongation, dielectric constant, and dielectric tangent were determined. These measurement results are shown in Table 14 and Table 15.

[表14]    實施例 C-2 實施例 C-3 實施例 C-4 實施例 C-5 實施例 C-6 實施例 C-7 聚醯胺酸溶液的種類 C-2 C-3 C-4 C-5 C-6 C-7 聚醯亞胺膜的種類 C-2 C-3 C-4 C-5 C-6 C-7 CTE[ppm/K] 17.0 15.6 16.1 22.3 15.8 23.8 吸濕率[重量%] 0.54 0.61 0.59 0.60 0.60 0.58 Tg[℃] 330 342 318 312 322 314 霧度[%] 67.6 67.8 71.4 73.5 68.9 74.7 膜伸長率[%] 33 42 35 37 31 42 介電常數 3.50 3.54 3.40 3.50 3.39 3.50 介電正切(×10 -4 32 34 31 32 35 31 [Table 14] Example C-2 Example C-3 Example C-4 Example C-5 Example C-6 Example C-7 Types of polyamide acid solutions C-2 C-3 C-4 C-5 C-6 C-7 Types of polyimide membranes C-2 C-3 C-4 C-5 C-6 C-7 CTE[ppm/K] 17.0 15.6 16.1 22.3 15.8 23.8 Moisture absorption rate [weight%] 0.54 0.61 0.59 0.60 0.60 0.58 Tg[°C] 330 342 318 312 322 314 Haze[%] 67.6 67.8 71.4 73.5 68.9 74.7 Film elongation [%] 33 42 35 37 31 42 Dielectric constant 3.50 3.54 3.40 3.50 3.39 3.50 Dielectric tangent (×10 -4 ) 32 34 31 32 35 31

[表15]    參考例 C-1 參考例 C-2 實施例 C-8 實施例 C-9 聚醯胺酸溶液的種類 C-8 C-9 C-10 C-11 聚醯亞胺膜的種類 C-8 C-9 C-10 C-11 CTE[ppm/K] 15.8 32.7 32.2 26.1 吸濕率[重量%] 0.60 0.57 0.59 0.58 Tg[℃] 314 296 340 307 霧度[%] 73.6 79.9 87.0 77.8 膜伸長率[%] 22 47 30 44 介電常數 3.47 3.54 3.49 3.52 介電正切(×10 -4 31 29 33 30 [Table 15] Reference example C-1 Reference example C-2 Example C-8 Example C-9 Types of polyamide acid solutions C-8 C-9 C-10 C-11 Types of polyimide membranes C-8 C-9 C-10 C-11 CTE[ppm/K] 15.8 32.7 32.2 26.1 Moisture absorption rate [weight%] 0.60 0.57 0.59 0.58 Tg[°C] 314 296 340 307 Haze[%] 73.6 79.9 87.0 77.8 Film elongation [%] twenty two 47 30 44 Dielectric constant 3.47 3.54 3.49 3.52 Dielectric tangent (×10 -4 ) 31 29 33 30

[實施例C-10] 除了使用聚醯胺酸溶液C-11並自120℃至360℃為止進行5小時階段性的熱處理以外,與實施例C-1同樣地製備聚醯亞胺膜C-12(CTE:10.2 ppm/K、Tg:307℃、吸濕率:0.61重量%、霧度:74.2%、膜伸長率:41%)。 [Example C-10] Polyimide film C-12 (CTE: 10.2 ppm/ K, Tg: 307°C, moisture absorption: 0.61% by weight, haze: 74.2%, film elongation: 41%).

[實施例C-11] 於將聚醯胺酸溶液C-15以硬化後的厚度成為約2 μm~3 μm的方式均勻地塗佈於厚度為12 μm的電解銅箔的單面(表面粗糙度Rz:0.6 μm)後,在120℃下進行加熱乾燥並去除溶媒。其次,於其上將聚醯胺酸溶液C-1以硬化後的厚度成為約21 μm的方式均勻地進行塗佈,在120℃下進行加熱乾燥並去除溶媒。進而,於其上將聚醯胺酸溶液C-15以硬化後的厚度成為約2 μm~3 μm的方式均勻地進行塗佈後,在120℃下進行加熱乾燥並去除溶媒。如此,於形成三層聚醯胺酸層後,自120℃至360℃為止進行30分鐘階段性的熱處理,完成醯亞胺化,而製備金屬張積層板C-11。未確認到金屬張積層板C-11中的聚醯亞胺層的膨脹等不良狀況。 [Example C-11] After the polyamic acid solution C-15 is uniformly applied to one side of an electrolytic copper foil with a thickness of 12 μm (surface roughness Rz: 0.6 μm) so that the thickness after curing becomes approximately 2 μm to 3 μm , heat-dried at 120° C. to remove the solvent. Next, the polyamic acid solution C-1 was uniformly applied thereon so that the thickness after curing was about 21 μm, and heat-dried at 120° C. to remove the solvent. Furthermore, polyamic-acid solution C-15 was uniformly apply|coated so that the thickness after hardening may become about 2 micrometers - 3 micrometers, and it heat-dried at 120 degreeC, and removed a solvent. In this way, after forming three layers of polyamic acid layers, stepwise heat treatment was carried out from 120° C. to 360° C. for 30 minutes to complete imidization, and the metal tension laminate C-11 was prepared. Defects such as expansion of the polyimide layer in the metal tension laminate C-11 were not confirmed.

[實施例C-12~實施例C-17] 除了使用聚醯胺酸溶液C-2~聚醯胺酸溶液C-7來代替聚醯胺酸溶液C-1以外,與實施例C-11同樣地製備金屬張積層板C-12~金屬張積層板C-17。於金屬張積層板C-12~金屬張積層板C-17中的任一者中均未確認到聚醯亞胺層的膨脹等不良狀況。 [Example C-12 to Example C-17] Except for using polyamic acid solution C-2 to polyamic acid solution C-7 instead of polyamic acid solution C-1, metal tension laminates C-12 to metal sheets were prepared in the same manner as in Example C-11. Laminate C-17. No defects such as swelling of the polyimide layer were confirmed in any of the metal tensor laminated boards C-12 to C-17.

(參考例C-3) 除了實施例C-11中的自120℃至360℃為止進行15分鐘階段性的熱處理以外,與實施例C-11同樣地製備金屬張積層板,但於聚醯亞胺層中確認到膨脹。 (Refer to Example C-3) In Example C-11, except that the stepwise heat treatment was performed from 120° C. to 360° C. for 15 minutes, a metal tension laminate was produced in the same manner as in Example C-11, but expansion was confirmed in the polyimide layer.

[實施例C-18~實施例C-20] 除了使用聚醯胺酸溶液C-4~聚醯胺酸溶液C-6來代替實施例C-11中的聚醯胺酸溶液C-1並自120℃至360℃為止進行15分鐘階段性的熱處理以外,與實施例C-11同樣地製備金屬張積層板C-18~金屬張積層板C-20。於金屬張積層板C-18~金屬張積層板C-20的任一者中均未確認到聚醯亞胺層的膨脹等不良狀況。 [Example C-18 to Example C-20] In addition to using polyamic acid solution C-4 to polyamic acid solution C-6 to replace polyamic acid solution C-1 in Example C-11 and carry out a 15-minute step-by-step process from 120°C to 360°C Except for the heat treatment, metal tension laminates C-18 to metal tension laminates C-20 were prepared in the same manner as in Example C-11. No defects such as swelling of the polyimide layer were confirmed in any of the metal tensor laminated boards C-18 to C-20.

(參考例C-4~參考例C-6) 除了使用聚醯胺酸溶液C-2、聚醯胺酸溶液C-3及聚醯胺酸溶液C-7來代替實施例C-11中的聚醯胺酸溶液C-1並自120℃至360℃為止進行15分鐘階段性的熱處理以外,與實施例C-11同樣地製備金屬張積層板,但於任一金屬張積層板中於聚醯亞胺層中均確認到膨脹。 (Reference example C-4 to reference example C-6) In addition to using polyamic acid solution C-2, polyamic acid solution C-3 and polyamic acid solution C-7 to replace polyamic acid solution C-1 in Example C-11 and from 120 ° C to Except for stepwise heat treatment up to 360° C. for 15 minutes, a metal tension laminate was produced in the same manner as in Example C-11, but swelling was observed in the polyimide layer in any metal tension laminate.

[實施例C-21~實施例C-26] 除了使用表16中所示的聚醯胺酸溶液以外,與實施例C-1同樣地製備聚醯亞胺膜C-13~聚醯亞胺膜C-18。關於聚醯亞胺膜C-13~聚醯亞胺膜C-18,求出CTE、Tg、介電常數及介電正切。將該些測定結果示於表16中。 [Example C-21 to Example C-26] Except having used the polyamic acid solution shown in Table 16, it carried out similarly to Example C-1, and produced polyimide membrane C-13 - polyimide membrane C-18. For polyimide films C-13 to C-18, CTE, Tg, dielectric constant, and dielectric tangent were obtained. These measurement results are shown in Table 16.

[表16]    實施例 C-21 實施例 C-22 實施例 C-23 實施例 C-24 實施例 C-25 實施例 C-26 聚醯胺酸溶液的種類 C-13 C-14 C-15 C-16 C-17 C-18 聚醯亞胺膜的種類 C-13 C-14 C-15 C-16 C-17 C-18 CTE[ppm/K] 20.0 14.8 16.3 18.0 17.5 19.9 Tg[℃] 322 334 340 320 332 320 介電常數 3.41 3.41 3.70 3.62 3.60 3.66 介電正切(×10 -4 39 38 34 32 33 32 [Table 16] Example C-21 Example C-22 Example C-23 Example C-24 Example C-25 Example C-26 Types of polyamide acid solutions C-13 C-14 C-15 C-16 C-17 C-18 Types of polyimide membranes C-13 C-14 C-15 C-16 C-17 C-18 CTE[ppm/K] 20.0 14.8 16.3 18.0 17.5 19.9 Tg[°C] 322 334 340 320 332 320 Dielectric constant 3.41 3.41 3.70 3.62 3.60 3.66 Dielectric tangent (×10 -4 ) 39 38 34 32 33 32

[實施例C-27~實施例C-30] 除了使用聚醯胺酸溶液C-15~聚醯胺酸溶液C-18來代替實施例C-11中的聚醯胺酸溶液C-1並自120℃至360℃為止進行15分鐘階段性的熱處理以外,與實施例C-11同樣地製備金屬張積層板C-27~金屬張積層板C-30。於金屬張積層板C-27~金屬張積層板C-30的任一者中均未確認到聚醯亞胺層的膨脹等不良狀況。 [Example C-27 to Example C-30] In addition to using polyamic acid solution C-15 ~ polyamic acid solution C-18 to replace the polyamic acid solution C-1 in Example C-11 and carry out a 15-minute step-by-step process from 120°C to 360°C Except for the heat treatment, metal tension laminates C-27 to metal tension laminates C-30 were produced in the same manner as in Example C-11. No defects such as swelling of the polyimide layer were confirmed in any of the metal tension laminates C-27 to C-30.

(參考例C-7~參考例C-8) 除了使用聚醯胺酸溶液C-13及聚醯胺酸溶液C-14來代替實施例C-11中的聚醯胺酸溶液C-1並自120℃至360℃為止進行15分鐘階段性的熱處理以外,與實施例C-11同樣地製備金屬張積層板,但於任一金屬張積層板中於聚醯亞胺層中均確認到膨脹。 (Reference Example C-7 to Reference Example C-8) In addition to using polyamic acid solution C-13 and polyamic acid solution C-14 to replace polyamic acid solution C-1 in Example C-11 and carry out a step-by-step process from 120°C to 360°C for 15 minutes Except for the heat treatment, a metal tension laminate was produced in the same manner as in Example C-11, but expansion was confirmed in the polyimide layer in any metal tension laminate.

[實施例C-31~實施例C-32] 除了使用表17中所示的聚醯胺酸溶液以外,與實施例C-1同樣地製備聚醯亞胺膜C-19~聚醯亞胺膜C-20。關於聚醯亞胺膜C-19~聚醯亞胺膜C-20,求出CTE、Tg、介電常數及介電正切。將該些測定結果示於表17中。 [Example C-31 to Example C-32] Except having used the polyamic acid solution shown in Table 17, it carried out similarly to Example C-1, and produced polyimide membrane C-19 - polyimide membrane C-20. For the polyimide films C-19 to C-20, CTE, Tg, dielectric constant, and dielectric tangent were obtained. These measurement results are shown in Table 17.

[表17]    實施例 C-31 實施例 C-32 聚醯胺酸溶液的種類 C-19 C-20 聚醯亞胺膜的種類 C-19 C-20 CTE[ppm/K] 5.4 14.1 Tg[℃] >400 304 介電常數 3.51 3.45 介電正切(×10 -4 35 30 [Table 17] Example C-31 Example C-32 Types of polyamide acid solutions C-19 C-20 Types of polyimide membranes C-19 C-20 CTE[ppm/K] 5.4 14.1 Tg[°C] >400 304 Dielectric constant 3.51 3.45 Dielectric tangent (×10 -4 ) 35 30

以上,以例示的目的來對本發明的實施形態進行了詳細說明,但本發明並不受到所述實施形態制約,可進行各種變形。As mentioned above, although the embodiment of this invention was demonstrated in detail for the purpose of illustration, this invention is not restricted by the said embodiment, Various deformation|transformation is possible.

本申請案主張基於2016年9月29日提出申請的日本專利申請2016-191786號、2016年9月29日提出申請的日本專利申請2016-191787號、2016年12月28日提出申請的日本專利申請2016-256927號及2016年12月28日提出申請的日本專利申請2016-256928號的優先權,且將所述申請的全部內容引用至本申請案中。This application claim is based on Japanese Patent Application No. 2016-191786 filed on September 29, 2016, Japanese Patent Application No. 2016-191787 filed on September 29, 2016, and Japanese Patent Application filed on December 28, 2016 Application No. 2016-256927 and Japanese Patent Application No. 2016-256928 filed on December 28, 2016 have priority, and the entire contents of said applications are incorporated into this application.

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Claims (8)

一種聚醯亞胺膜,其於包含非熱塑性聚醯亞胺的非熱塑性聚醯亞胺層的至少一面具有包含熱塑性聚醯亞胺的熱塑性聚醯亞胺層,且所述聚醯亞胺膜的特徵在於滿足下述條件(a-i)~條件(a-iv): (a-i)構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺為芳香族四羧酸殘基及芳香族二胺殘基,且 相對於所述芳香族四羧酸殘基的100莫耳份, 由3,3',4,4'-聯苯四羧酸二酐(BPDA)所衍生的四羧酸殘基(BPDA殘基)及由1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)所衍生的四羧酸殘基(TAHQ殘基)中的至少一種以及由均苯四甲酸二酐(PMDA)所衍生的四羧酸殘基(PMDA殘基)及2,3,6,7-萘四羧酸二酐(NTCDA)所衍生的四羧酸殘基(NTCDA殘基)中的至少一種的合計為80莫耳份以上, 所述BPDA殘基及所述TAHQ殘基中的至少一種、與所述PMDA殘基及所述NTCDA殘基中的至少一種的莫耳比{(BPDA殘基+TAHQ殘基)/(PMDA殘基+NTCDA殘基)}處於0.6~1.3的範圍內; (a-ii)構成所述熱塑性聚醯亞胺層的熱塑性聚醯亞胺為芳香族四羧酸殘基及芳香族二胺殘基,且 相對於所述芳香族二胺殘基的100莫耳份, 由選自下述通式(B1)~通式(B7)表示的二胺化合物中的至少一種二胺化合物所衍生的二胺殘基為70莫耳份以上,且由下述通式(A1)表示的二胺化合物所衍生的二胺殘基為1莫耳份以上且30莫耳份以下的範圍內; (a-iii)熱膨脹係數為10 ppm/K~30 ppm/K的範圍內; (a-iv)10 GHz下的介電正切(Df)為0.004以下,
Figure 03_image001
式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數;其中,自式(B3)中去除與式(B2)重複者,自式(B5)中去除與式(B4)重複者,
Figure 03_image003
式(A1)中,連結基X表示單鍵或-COO-,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示0~2的整數,p及q獨立地表示0~4的整數。
A polyimide film, which has a thermoplastic polyimide layer comprising thermoplastic polyimide on at least one side of the non-thermoplastic polyimide layer comprising non-thermoplastic polyimide, and the polyimide film is characterized by satisfying the following conditions (ai) to (a-iv): (ai) the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer is an aromatic tetracarboxylic acid residue and an aromatic dicarboxylic acid residue. amine residues, and relative to 100 molar parts of the aromatic tetracarboxylic acid residues, tetracarboxylic acid residues derived from 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) (BPDA residue) and at least one of the tetracarboxylic acid residue (TAHQ residue) derived from 1,4-phenylene bis(trimellitic acid monoester) dianhydride (TAHQ) and Tetracarboxylic acid residues (PMDA residues) derived from tetracarboxylic dianhydride (PMDA) and tetracarboxylic acid residues (NTCDA residues) derived from 2,3,6,7-naphthalene tetracarboxylic dianhydride (NTCDA) The total of at least one of ) is 80 mole parts or more, the molar ratio of at least one of the BPDA residue and the TAHQ residue to at least one of the PMDA residue and the NTCDA residue {(BPDA residue+TAHQ residue)/(PMDA residue+NTCDA residue)} is in the range of 0.6 to 1.3; (a-ii) the thermoplastic polyimide constituting the thermoplastic polyimide layer is Aromatic tetracarboxylic acid residues and aromatic diamine residues, and relative to 100 mole parts of the aromatic diamine residues, are represented by the group selected from the following general formula (B1) to general formula (B7) At least 70 mole parts of diamine residues derived from at least one diamine compound among the diamine compounds, and 1 mole part of diamine residues derived from a diamine compound represented by the following general formula (A1) (a-iii) The coefficient of thermal expansion is in the range of 10 ppm/K to 30 ppm/K; (a-iv) The dielectric tangent (Df) at 10 GHz is 0.004 or less ,
Figure 03_image001
In formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or alkoxy group with 1 to 6 carbons, and the linking group A independently represents a group selected from -O-, -S-, -CO-, A divalent group in -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents an integer of 0 to 4 ; Among them, the duplicates of formula (B2) are removed from formula (B3), and the duplicates of formula (B4) are removed from formula (B5),
Figure 03_image003
In the formula (A1), the linking group X represents a single bond or -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, n represents an integer of 0 to 2, and p and q independently Represents an integer from 0 to 4.
如請求項1所述的聚醯亞胺膜,其中相對於構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中的芳香族二胺殘基的100莫耳份,由所述通式(A1)表示的二胺化合物所衍生的二胺殘基為80莫耳份以上。The polyimide film as described in claim 1, wherein relative to 100 mole parts of the aromatic diamine residues in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer, the The diamine residue derived from the diamine compound represented by general formula (A1) is 80 mol parts or more. 如請求項1所述的聚醯亞胺膜,其中相對於構成所述熱塑性聚醯亞胺層的熱塑性聚醯亞胺中的所述芳香族二胺殘基的100莫耳份,由選自所述通式(B1)~通式(B7)表示的二胺化合物中的至少一種二胺化合物所衍生的二胺殘基為70莫耳份以上且99莫耳份以下的範圍內。The polyimide film according to claim 1, wherein with respect to 100 mole parts of the aromatic diamine residues in the thermoplastic polyimide constituting the thermoplastic polyimide layer, The diamine residue derived from at least one diamine compound among the diamine compounds represented by the general formulas (B1) to (B7) is within the range of 70 mol parts or more and 99 mol parts or less. 一種聚醯亞胺膜,其於包含非熱塑性聚醯亞胺的非熱塑性聚醯亞胺層的至少一面具有包含熱塑性聚醯亞胺的熱塑性聚醯亞胺層,且所述聚醯亞胺膜的特徵在於滿足下述條件(b-i)~條件(b-iv): (b-i)熱膨脹係數為10 ppm/K~30 ppm/K的範圍內; (b-ii)構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺為芳香族四羧酸殘基及芳香族二胺殘基,且 相對於所述芳香族四羧酸殘基的100莫耳份, 由選自3,3',4,4'-聯苯四羧酸二酐(BPDA)及1,4-伸苯基雙(偏苯三甲酸單酯)二酐(TAHQ)中的至少一種四羧酸二酐所衍生的四羧酸殘基為30莫耳份以上且60莫耳份以下的範圍內, 由均苯四甲酸二酐(PMDA)所衍生的四羧酸殘基為40莫耳份以上且70莫耳份以下的範圍內; (b-iii)相對於構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中的芳香族二胺殘基的100莫耳份, 由下述通式(A1)表示的二胺化合物所衍生的二胺殘基為80莫耳份以上; (b-iv)構成所述熱塑性聚醯亞胺層的熱塑性聚醯亞胺為包含芳香族四羧酸殘基及芳香族二胺殘基者,且相對於所述芳香族二胺殘基的100莫耳份, 由選自下述通式(B1)~通式(B7)表示的二胺化合物中的至少一種二胺化合物所衍生的二胺殘基為70莫耳份以上且99莫耳份以下的範圍內, 由下述通式(A1)表示的二胺化合物所衍生的二胺殘基為1莫耳份以上且30莫耳份以下的範圍內,
Figure 03_image003
式(A1)中,連結基X表示單鍵或-COO-,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示0~2的整數,p及q獨立地表示0~4的整數,
Figure 03_image001
式(B1)~式(B7)中,R 1獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO 2-、-COO-、-CH 2-、-C(CH 3) 2-、-NH-或-CONH-中的二價基,n 1獨立地表示0~4的整數;其中,自式(B3)中去除與式(B2)重複者,自式(B5)中去除與式(B4)重複者。
A polyimide film, which has a thermoplastic polyimide layer comprising thermoplastic polyimide on at least one side of the non-thermoplastic polyimide layer comprising non-thermoplastic polyimide, and the polyimide film is characterized by satisfying the following conditions (bi) to (b-iv): (bi) the thermal expansion coefficient is in the range of 10 ppm/K to 30 ppm/K; (b-ii) the non-thermoplastic polyamide The non-thermoplastic polyimide of the amine layer is an aromatic tetracarboxylic acid residue and an aromatic diamine residue, and with respect to 100 mole parts of the aromatic tetracarboxylic acid residue, is selected from 3,3' , derived from at least one tetracarboxylic dianhydride in 4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 1,4-phenylene bis(trimellitic acid monoester) dianhydride (TAHQ) The tetracarboxylic acid residue is in the range of 30 mole parts to 60 mole parts, and the tetracarboxylic acid residue derived from pyromellitic dianhydride (PMDA) is 40 mole parts to 70 mole parts Within the following range; (b-iii) With respect to 100 mole parts of the aromatic diamine residues in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer, the following general formula (A1 ) the diamine residue derived from the diamine compound is more than 80 mole parts; (b-iv) the thermoplastic polyimide constituting the thermoplastic polyimide layer contains aromatic tetracarboxylic acid residues and Aromatic diamine residues, and relative to 100 mole parts of the aromatic diamine residues, at least one of the diamine compounds represented by the following general formula (B1) to general formula (B7) The diamine residue derived from the diamine compound is in the range of 70 mole parts to 99 mole parts, and the diamine residue derived from the diamine compound represented by the following general formula (A1) is 1 mole Parts or more and 30 mole parts or less,
Figure 03_image003
In the formula (A1), the linking group X represents a single bond or -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, n represents an integer of 0 to 2, and p and q independently Represents an integer from 0 to 4,
Figure 03_image001
In formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or alkoxy group with 1 to 6 carbons, and the linking group A independently represents a group selected from -O-, -S-, -CO-, A divalent group in -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH-, n 1 independently represents an integer of 0 to 4 ; Among them, the duplicates of formula (B2) are removed from formula (B3), and the duplicates of formula (B4) are removed from formula (B5).
如請求項1或請求項4所述的聚醯亞胺膜,其中所述非熱塑性聚醯亞胺及所述熱塑性聚醯亞胺的醯亞胺基濃度均為33重量%以下。The polyimide film according to claim 1 or claim 4, wherein both the non-thermoplastic polyimide and the thermoplastic polyimide have an imide group concentration of 33% by weight or less. 一種聚醯亞胺膜,其具有至少一層非熱塑性聚醯亞胺層,且所述聚醯亞胺膜的特徵在於滿足下述條件(c-i)~條件(c-iii): (c-i)構成所述非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺為芳香族四羧酸殘基及芳香族二胺殘基,且 相對於所述芳香族四羧酸殘基的100莫耳份,於30莫耳份~60莫耳份的範圍內含有由3,3',4,4'-聯苯四羧酸二酐及1,4-伸苯基雙(偏苯三甲酸單酯)二酐中的至少一種所衍生的四羧酸殘基,於40莫耳份~70莫耳份的範圍內含有由均苯四甲酸二酐及2,3,6,7-萘四羧酸二酐中的至少一種所衍生的四羧酸殘基, 相對於所述芳香族二胺殘基的100莫耳份,含有70莫耳份以上的由下述通式(A1)表示的二胺化合物所衍生的二胺殘基,且於2莫耳份~15莫耳份的範圍內含有由下述通式(C1)~通式(C4)表示的二胺化合物所衍生的二胺殘基; (c-ii)玻璃轉移溫度為300℃以上; (c-iii)10 GHz下的介電正切(Df)為0.004以下,
Figure 03_image003
式(A1)中,連結基X表示單鍵或-COO-,Y獨立地表示氫、碳數1~3的一價烴基或烷氧基,n表示1或2的整數,p及q獨立地表示0~4的整數,
Figure 03_image008
式(C1)~式(C4)中,R 2獨立地表示碳數1~6的一價烴基、烷氧基或烷硫基,連結基A’獨立地表示選自-O-、-SO 2-、-CH 2-或-C(CH 3) 2-中的二價基,連結基X1獨立地表示-CH 2-、-O-CH 2-O-、-O-C 2H 4-O-、-O-C 3H 6-O-、-O-C 4H 8-O-、-O-C 5H 10-O-、-O-CH 2-C(CH 3) 2-CH 2-O-、-C(CH 3) 2-、-C(CF 3) 2-或-SO 2-,n 3獨立地表示1~4的整數,n 4獨立地表示0~4的整數,但於式(C3)中,連結基A’不含-CH 2-、-C(CH 3) 2-、-C(CF 3) 2-或-SO 2-的情況下,n 4的任一者為1以上。
A polyimide film, which has at least one non-thermoplastic polyimide layer, and the polyimide film is characterized by satisfying the following conditions (ci) to (c-iii): (ci) forming the The non-thermoplastic polyimide of the non-thermoplastic polyimide layer is an aromatic tetracarboxylic acid residue and an aromatic diamine residue, and relative to 100 mole parts of the aromatic tetracarboxylic acid residue, in The range of 30 mole parts to 60 mole parts contains 3,3',4,4'-biphenyltetracarboxylic dianhydride and 1,4-phenylene bis(trimellitic acid monoester) dianhydride At least one of the tetracarboxylic acid residues derived from it contains pyromellitic dianhydride and 2,3,6,7-naphthalene tetracarboxylic dianhydride in the range of 40 mole parts to 70 mole parts At least one derived tetracarboxylic acid residue, containing 70 mole parts or more of the diamine compound derived from the following general formula (A1) relative to 100 mole parts of the aromatic diamine residue Diamine residues, and contain diamine residues derived from diamine compounds represented by the following general formula (C1) to general formula (C4) within the range of 2 mole parts to 15 mole parts; (c -ii) the glass transition temperature is 300°C or higher; (c-iii) the dielectric tangent (Df) at 10 GHz is 0.004 or lower,
Figure 03_image003
In the formula (A1), the linking group X represents a single bond or -COO-, Y independently represents hydrogen, a monovalent hydrocarbon group or an alkoxy group with 1 to 3 carbons, n represents an integer of 1 or 2, and p and q independently Represents an integer from 0 to 4,
Figure 03_image008
In formulas (C1) to (C4), R 2 independently represents a monovalent hydrocarbon group, alkoxy group or alkylthio group with 1 to 6 carbons, and the linking group A' independently represents a group selected from -O-, -SO 2 The divalent group in -, -CH 2 - or -C(CH 3 ) 2 -, the linking group X1 independently represents -CH 2 -, -O-CH 2 -O-, -OC 2 H 4 -O-, -OC 3 H 6 -O-, -OC 4 H 8 -O-, -OC 5 H 10 -O-, -O-CH 2 -C(CH 3 ) 2 -CH 2 -O-, -C(CH 3 ) 2 -, -C(CF 3 ) 2 - or -SO 2 -, n 3 independently represents an integer of 1 to 4, and n 4 independently represents an integer of 0 to 4, but in the formula (C3), the link When the group A' does not contain -CH 2 -, -C(CH 3 ) 2 -, -C(CF 3 ) 2 - or -SO 2 -, any one of n 4 is 1 or more.
一種銅張積層板,其具備絕緣層,並且於所述絕緣層的至少一個面具備銅箔,且所述銅張積層板的特徵在於: 所述絕緣層包含如請求項1、請求項4或請求項6中任一項所述的聚醯亞胺膜。 A copper tension-laminated board having an insulating layer and having a copper foil on at least one surface of the insulating layer, wherein the copper tensioned-laminated board is characterized by: The insulating layer comprises the polyimide film as described in any one of Claim 1, Claim 4 or Claim 6. 一種電路基板,其是將如請求項7所述的銅張積層板的所述銅箔加工成配線而成。A circuit board obtained by processing the copper foil of the copper tension laminate according to claim 7 into wiring.
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