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TWI762489B - Disc-shaped glass and method of making the same - Google Patents

Disc-shaped glass and method of making the same Download PDF

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Publication number
TWI762489B
TWI762489B TW106121124A TW106121124A TWI762489B TW I762489 B TWI762489 B TW I762489B TW 106121124 A TW106121124 A TW 106121124A TW 106121124 A TW106121124 A TW 106121124A TW I762489 B TWI762489 B TW I762489B
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disk
glass
shaped glass
temperature
heat treatment
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TW106121124A
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TW201815701A (en
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簑口裕正
寺井秀孝
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日商日本電氣硝子股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/037Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

本發明之圓盤狀玻璃之製造方法之特徵為:具備有:熱處理工程,其係將玻璃板,在由室溫加熱至在徐冷點-50℃~徐冷點+80℃的範圍內被預先設定的波峰溫度之後進行冷卻;及圓形切斷工程,其係由玻璃板切出圓盤狀玻璃。在本發明之圓盤狀玻璃之製造方法中,較佳為熱處理工程係包含:升溫步驟,其係由室溫以+1~+16℃/min的速度升溫至波峰溫度;保持步驟,其係在升溫步驟後,以波峰溫度-10℃~波峰溫度的範圍內的保持溫度保持0~120分鐘;及降溫步驟,其係在保持步驟之後,在由保持溫度至玻璃板之應變點-50℃的溫度區域中,以-6.0~-0.3℃/min的速度降溫。 The manufacturing method of the disc-shaped glass of the present invention is characterized by comprising: a heat treatment process in which a glass plate is heated from room temperature to a temperature range of -50°C to a cool point +80°C. The pre-set peak temperature is followed by cooling; and the circular cutting process, which is to cut the disk-shaped glass from the glass plate. In the manufacturing method of the disc-shaped glass of the present invention, it is preferable that the heat treatment process comprises: a heating step, which is to raise the temperature from room temperature to a peak temperature at a speed of +1~+16°C/min; a holding step, which is After the heating step, the holding temperature in the range of the peak temperature -10°C to the peak temperature is maintained for 0 to 120 minutes; and the cooling step is after the holding step, from the holding temperature to the strain point of the glass plate -50°C In the temperature range of , the temperature is lowered at a rate of -6.0~-0.3℃/min.

Description

圓盤狀玻璃及其製造方法 Disc-shaped glass and method of making the same

本發明係關於圓盤狀玻璃及其製造方法,具體而言,關於在半導體封裝體之製造工程中使用在支持加工基板的圓盤狀玻璃及其製造方法。 The present invention relates to a disk-shaped glass and a method for producing the same, and more specifically, relates to a glass-disc-shaped glass that is used as a support processing substrate in a manufacturing process of a semiconductor package, and a method for producing the same.

在半導體之製造工程中,使用圓盤狀的半導體支持用玻璃基板,作為支持半導體基板的構件。半導體支持用玻璃基板係圖求高平坦性,俾以安定支持半導體基板。對於如上所示之要求,開發出一種將主平面進行研磨加工,以提升半導體支持用玻璃基板的平坦度的技術(例如專利文獻1)。 In a semiconductor manufacturing process, a disk-shaped semiconductor supporting glass substrate is used as a member for supporting the semiconductor substrate. The glass substrate for semiconductor support requires high flatness to support the semiconductor substrate stably. In response to the above-mentioned requirements, a technique for improving the flatness of the glass substrate for semiconductor support by polishing the main plane surface has been developed (for example, Patent Document 1).

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特表2014-517805號公報 [Patent Document 1] Japanese Patent Publication No. 2014-517805

但是,僅進行研磨,難以充分提升玻璃基板的平坦度。具體而言,在預先成形較薄的玻璃板中,可研 磨的餘裕少,難以充分平坦化。此外,若將成形為相對較厚的玻璃板進行研磨時,由於研磨量變多,因此有製造成本大幅增大的問題。 However, it is difficult to fully improve the flatness of a glass substrate only by grinding|polishing. Specifically, in a preliminarily thin glass plate, there is little margin for grinding, and it is difficult to sufficiently flatten it. Moreover, when grinding|polishing the glass plate shape|molded comparatively thick, since the grinding|polishing amount becomes large, there exists a problem that manufacturing cost increases significantly.

本發明係鑑於上述情形而完成者,目的在提供具高平坦度的圓盤狀玻璃、以及可輕易獲得該圓盤狀玻璃之製造方法。 The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a disk-shaped glass with high flatness, and a method for producing the disk-shaped glass with ease.

本發明之圓盤狀玻璃之製造方法之特徵為:具備有:熱處理工程,其係將玻璃板,在由室溫加熱至在徐冷點-50℃~徐冷點+80℃的範圍內被預先設定的波峰溫度之後進行冷卻;及圓形切斷工程,其係由玻璃板切出圓盤狀玻璃。 The manufacturing method of the disc-shaped glass of the present invention is characterized by comprising: a heat treatment process in which a glass plate is heated from room temperature to a temperature range of -50°C to a cool point +80°C. The pre-set peak temperature is followed by cooling; and the circular cutting process, which is to cut the disk-shaped glass from the glass plate.

在本發明之圓盤狀玻璃之製造方法中,較佳為熱處理工程係包含:升溫步驟,其係由室溫以+1~+16℃/min的速度升溫至波峰溫度;保持步驟,其係在升溫步驟後,以波峰溫度-10℃~波峰溫度的範圍內的保持溫度保持0~120分鐘;及降溫步驟,其係在保持步驟之後,在由保持溫度至玻璃板之應變點-50℃的溫度區域中,以-6.0~-0.3℃/min的速度降溫。 In the manufacturing method of the disc-shaped glass of the present invention, it is preferable that the heat treatment process comprises: a heating step, which is to raise the temperature from room temperature to a peak temperature at a speed of +1~+16°C/min; a holding step, which is After the heating step, the holding temperature in the range of the peak temperature -10°C to the peak temperature is maintained for 0 to 120 minutes; and the cooling step is after the holding step, from the holding temperature to the strain point of the glass plate -50°C In the temperature range of , the temperature is lowered at a rate of -6.0~-0.3℃/min.

在本發明之圓盤狀玻璃之製造方法中,較佳為降溫步驟係包含:第一降溫步驟,其係在由保持溫度至玻璃板之應變點-50℃的溫度區域中,以-3.0~-0.3℃/min的速度降溫;及第二降溫步驟,其係在應變點-50℃以下的溫度區域中,以-5.8~-1.1℃/min的速度降溫。 In the manufacturing method of the disc-shaped glass of the present invention, it is preferable that the cooling step includes: a first cooling step, which is in the temperature range from the holding temperature to the strain point of the glass plate at -50°C, at a temperature of -3.0~ Cooling at a speed of -0.3°C/min; and a second cooling step, which is in a temperature region below the strain point -50°C, cooling at a speed of -5.8~-1.1°C/min.

在本發明之圓盤狀玻璃之製造方法中,較佳為在熱處理工程中,在對板玻璃的板厚方向施加荷重的狀態下進行熱處理。 In the manufacturing method of the disc-shaped glass of this invention, it is preferable to heat-process in the state which applied the load to the plate-glass thickness direction in a heat-processing process.

在本發明之圓盤狀玻璃之製造方法中,較佳為使複數玻璃板在相互間介在脫模材來進行積層,在將按壓構件載置於最上段的狀態下,進行熱處理工程的熱處理。 In the manufacturing method of the disc-shaped glass of the present invention, it is preferable that a plurality of glass plates are laminated with a release material interposed therebetween, and the heat treatment process of the heat treatment process is performed with the pressing member placed on the uppermost stage.

在本發明之圓盤狀玻璃之製造方法中,較佳為在複數玻璃板的最下段另外配置支持構件,使按壓構件及支持構件之各個之與玻璃板的接觸面,大於玻璃板的主表面。在此所稱之玻璃板的主表面意指與玻璃板的厚度方向相對向的表面。 In the manufacturing method of the disc-shaped glass of the present invention, it is preferable to additionally arrange a supporting member at the lowermost stage of the plurality of glass plates, so that the contact surface of each of the pressing member and the supporting member with the glass plate is larger than the main surface of the glass plate . The main surface of a glass plate as used here means the surface which opposes the thickness direction of a glass plate.

在本發明之圓盤狀玻璃之製造方法中,較佳為另外具備有研磨工程,其係在熱處理工程以後且在圓形切斷工程之前或後之任一者,將玻璃板的兩主表面進行研磨,在研磨中,相對於其中一方主表面的研磨量之另一方主表面的研磨量為0.8~1.2倍的範圍內。 In the manufacturing method of the disc-shaped glass of the present invention, it is preferable to further include a grinding process, which is performed after the heat treatment process and either before or after the circular cutting process, to grind the two main surfaces of the glass plate. Polishing is performed, and the polishing amount of the other main surface is within the range of 0.8 to 1.2 times the polishing amount of the one main surface.

在本發明之圓盤狀玻璃之製造方法中,較佳為在熱處理工程後進行圓形切斷工程,具備有切口形成工程,其係在圓形切斷工程後,在圓盤狀玻璃板形成切口部。 In the manufacturing method of the disk-shaped glass of the present invention, it is preferable to perform a circular cutting process after the heat treatment process, and to include a slit forming process, which is formed on the disk-shaped glass plate after the circular cutting process. incision part.

本發明之圓盤狀玻璃之特徵為:翹曲為200μm以下,而且中心與端部的玻璃表面的應力的差為0 ~10MPa。在此所稱之中心係指基板中央

Figure 106121124-A0305-02-0006-1
50mm,端部係指離端面為100mm內側的部分。 The disc-shaped glass of the present invention is characterized in that the warpage is 200 μm or less, and the difference in stress between the glass surface at the center and the edge is 0 to 10 MPa. The center referred to herein refers to the center of the substrate
Figure 106121124-A0305-02-0006-1
50mm, the end refers to the part that is 100mm inside from the end face.

本發明之圓盤狀玻璃較佳為若將半徑設為r(mm),在離中心為0.8r以內的區域,形成碗形狀。 The disk-shaped glass of the present invention is preferably formed into a bowl shape in a region within 0.8r from the center when the radius is set to r (mm).

本發明之圓盤狀玻璃較佳為在使用時成為上面的主表面具有刻印,具有在形成有刻印的主表面側形成凹陷的碗形狀。 It is preferable that the disk-shaped glass of this invention has a marking on the main surface which becomes the upper surface at the time of use, and has the bowl shape which recessed the main surface side on which the marking was formed.

本發明之圓盤狀玻璃較佳為形成鞍形狀。 The disc-shaped glass of the present invention is preferably formed into a saddle shape.

本發明之圓盤狀玻璃較佳為具有切口部。 It is preferable that the disc-shaped glass of this invention has a notch part.

藉由本發明,可提供具高平坦度的圓盤狀玻璃、以及可輕易獲得該圓盤狀玻璃之製造方法。According to the present invention, a disk-shaped glass with high flatness and a manufacturing method for easily obtaining the disk-shaped glass can be provided.

G1‧‧‧玻璃板 G1‧‧‧glass plate

G3、G4‧‧‧圓盤狀玻璃 G3, G4‧‧‧Disc glass

U‧‧‧積層體 U‧‧‧Laminate

T‧‧‧熱處理裝置 T‧‧‧heat treatment device

M‧‧‧輸送機 M‧‧‧Conveyor

H‧‧‧熱處理爐 H‧‧‧heat treatment furnace

P1‧‧‧支持構件 P1‧‧‧Support Components

P2‧‧‧按壓構件 P2‧‧‧Pressing member

N‧‧‧切口部 N‧‧‧Incision

圖1係顯示本發明之實施形態之圓盤狀玻璃之製造方法之順序之一例的圖。 FIG. 1 is a view showing an example of the sequence of the manufacturing method of the disk-shaped glass according to the embodiment of the present invention.

圖2係顯示本發明之實施形態之積層體之構成之一例的圖。 FIG. 2 is a diagram showing an example of the structure of the laminate according to the embodiment of the present invention.

圖3係顯示本發明之實施形態之熱處理裝置之構成之一例的圖。 FIG. 3 is a diagram showing an example of the configuration of the heat treatment apparatus according to the embodiment of the present invention.

圖4係顯示本發明之實施形態之熱處理條件之一例的圖表。FIG. 4 is a graph showing an example of the heat treatment conditions in the embodiment of the present invention.

圖5係顯示本發明之實施形態之熱處理條件之一例的圖表。 FIG. 5 is a graph showing an example of the heat treatment conditions in the embodiment of the present invention.

圖6係顯示本發明之實施形態之熱處理條件之一例的圖表。 FIG. 6 is a graph showing an example of the heat treatment conditions in the embodiment of the present invention.

圖7係顯示本發明之實施形態之圓盤狀玻璃之一例的圖。 Fig. 7 is a view showing an example of the disk-shaped glass according to the embodiment of the present invention.

圖8係顯示本發明之實施形態之具有切口部的圓盤狀玻璃之一例的圖。 FIG. 8 is a view showing an example of the disc-shaped glass having a cutout part according to the embodiment of the present invention.

圖9A係將本發明之實施形態之具有碗形狀的圓盤狀玻璃的平面視形狀之一例放大視的圖。 FIG. 9A is an enlarged view of an example of the plan view shape of the disk-shaped glass having the bowl shape according to the embodiment of the present invention.

圖9B係將本發明之實施形態之具有碗形狀的圓盤狀玻璃的三次元斜視形狀之一例放大視的圖。 9B is an enlarged view of an example of a three-dimensional oblique view of the disk-shaped glass having a bowl shape according to the embodiment of the present invention.

圖10A係將本發明之實施形態之具有鞍形狀的圓盤狀玻璃的平面視形狀之一例放大視的圖。 Fig. 10A is an enlarged view of an example of a plan view shape of a disc-shaped glass having a saddle shape according to an embodiment of the present invention.

圖10B係將本發明之實施形態之具有鞍形狀的圓盤狀玻璃的三次元斜視形狀之一例放大視的圖。 Fig. 10B is an enlarged view showing an example of a three-dimensional oblique view of the disk-shaped glass having a saddle shape according to the embodiment of the present invention.

圖11A係將本發明之實施形態之具有谷形狀的圓盤狀玻璃的平面視形狀之一例放大視的圖。 Fig. 11A is an enlarged view of an example of a plan view shape of the disk-shaped glass having a valley shape according to the embodiment of the present invention.

圖11B係將本發明之實施形態之具有谷形狀的圓盤狀玻璃的三次元斜視形狀之一例放大視的圖。 11B is an enlarged view showing an example of a three-dimensional oblique view of the disc-shaped glass having a valley shape according to the embodiment of the present invention.

以下說明本發明之實施形態之圓盤狀玻璃及其製造方法。本發明之實施形態之圓盤狀玻璃G4係具有 切口部N之平面視大致正圓狀的玻璃基板(參照圖8),例如被使用作為支持半導體基板的支持基盤。 Hereinafter, the disk-shaped glass and the manufacturing method thereof according to the embodiment of the present invention will be described. The disk-shaped glass G4 according to the embodiment of the present invention is a substantially circular glass substrate in plan view (see FIG. 8 ) having a notch portion N, and is used, for example, as a support substrate for supporting a semiconductor substrate.

首先,根據圖1~8,說明本發明之實施形態之圓盤狀玻璃G4之製造方法。圖1係顯示本發明之實施形態之圓盤狀玻璃G4之製造方法之順序之一例的圖。本發明之實施形態之圓盤狀玻璃G4之製造方法係具備有:玻璃板準備工程S1、熱處理工程S2、圓形切斷工程S3、切口形成工程S4。 First, the manufacturing method of the disk-shaped glass G4 which concerns on embodiment of this invention is demonstrated based on FIGS. 1-8. 1 : is a figure which shows an example of the sequence of the manufacturing method of the disk-shaped glass G4 which concerns on embodiment of this invention. The manufacturing method of the disk-shaped glass G4 which concerns on embodiment of this invention is equipped with the glass plate preparation process S1, the heat treatment process S2, the circular cutting process S3, and the notch formation process S4.

玻璃板準備工程S1係準備成為圓盤狀玻璃G4之基礎的玻璃板G1的工程。玻璃板G1若為具有可切出圓盤狀玻璃G4之程度的尺寸的玻璃板即可。具體而言,玻璃板G1係例如矩形狀,較佳為大致正方形的板狀。玻璃板G1的板厚較佳為未達2.0mm、1.5mm以下、1.2mm以下、1.1mm以下、1.0mm以下、尤其0.9mm以下。此外,玻璃板G1的板厚較佳為0.1mm以上、0.2mm以上、0.3mm以上、0.4mm以上、0.5mm以上、0.6mm以上、尤其超過0.7mm。 The glass plate preparation process S1 is a process of preparing the glass plate G1 which is the basis of the disk-shaped glass G4. The glass plate G1 may be a glass plate having a size sufficient to cut out the disk-shaped glass G4. Specifically, the glass plate G1 is, for example, a rectangular shape, preferably a substantially square plate shape. The thickness of the glass plate G1 is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less. Moreover, it is preferable that the plate thickness of the glass plate G1 is 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and especially more than 0.7 mm.

玻璃板G1亦可為具有按照用途的任意組成的玻璃。玻璃板G1的組成較佳為以圓盤狀玻璃G3、G4成為後述之組成的方式予以預先調整。 The glass plate G1 may be glass having an arbitrary composition according to the application. The composition of the glass plate G1 is preferably adjusted in advance so that the disk-shaped glasses G3 and G4 become the composition described later.

玻璃板G1係使將例如被調合成為上述組成的玻璃原料熔融而得的熔融玻璃,使用溢流下拉法而成形為板狀者。其中,上述成形方法為一例,亦可使用例如漂浮法、或軋平法、狹縫下引法等以往周知的任意手法。 The glass plate G1 is formed by using the overflow down-draw method to shape the molten glass obtained by melting, for example, the glass raw material prepared into the above-mentioned composition into a plate shape. However, the above-mentioned forming method is an example, and any conventionally known methods such as a floating method, a flattening method, and a slit drawing method can also be used.

在本實施形態中,接續上述玻璃板準備工程S1,執行熱處理工程S2的處理。 In this embodiment, the process of the heat treatment process S2 is performed following the glass plate preparation process S1 mentioned above.

在熱處理工程S2中,將在上述玻璃板準備工程S1中所備妥的玻璃板G1進行熱處理而獲得熱處理玻璃板G2(未圖示)。具體而言,將玻璃板G1,在由室溫加熱至在徐冷點-50℃~徐冷點+80℃的範圍內被預先設定的波峰溫度之後進行冷卻。其中,在本發明中,室溫係指0~45℃的範圍內的溫度。藉由如上所示之處理,可適當減低熱處理玻璃板G2及根據熱處理玻璃板G2所得的圓盤狀玻璃G3、G4的翹曲。在此,若波峰溫度為未達徐冷點-50℃,熱處理變得不充分,難以適當減低圓盤狀玻璃G3、G4的翹曲,若波峰溫度超過徐冷點+80℃,形成過度熱處理,被推測在圓盤狀玻璃G3、G4的主表面容易發生因熱處理而起的凹狀缺陷(例如深度10μm以上、長徑200μm以上的橢圓形狀)。 In the heat treatment process S2, the glass plate G1 prepared in the said glass plate preparation process S1 is heat-processed, and the heat-treated glass plate G2 (not shown) is obtained. Specifically, the glass plate G1 is cooled after being heated from room temperature to a predetermined peak temperature in the range from -50°C to the cool point +80°C. However, in this invention, room temperature means the temperature in the range of 0-45 degreeC. The warpage of the heat-treated glass plate G2 and the disk-shaped glasses G3 and G4 obtained by the heat-treated glass plate G2 can be appropriately reduced by the above-described treatment. Here, if the peak temperature is less than the cold point of -50°C, the heat treatment will be insufficient, and it is difficult to properly reduce the warpage of the disk-shaped glasses G3 and G4. If the peak temperature exceeds the cold point +80°C, excessive heat treatment will occur. , it is estimated that concave defects (eg, ellipse with a depth of 10 μm or more and a major axis of 200 μm or more) due to heat treatment are likely to occur on the main surfaces of the disk-shaped glasses G3 and G4 .

更具體而言,熱處理工程S2係具備有:升溫步驟S21、保持步驟S22、降溫步驟S23。在升溫步驟S21中,較佳為將玻璃板G1,由室溫以+1~+16℃/min的速度升溫至波峰溫度。在保持步驟S22中,較佳為在升溫步驟S21後,將玻璃板G1,以波峰溫度-10℃~波峰溫度的範圍內的保持溫度保持0~120分鐘。在降溫步驟S23中,較佳為在保持步驟S22之後,將玻璃板G1,在由保持溫度至玻璃板G1之應變點-50℃的溫度區域中,以-6.0~-0.3℃/min的速度降溫。 More specifically, the heat treatment process S2 includes a temperature increase step S21, a holding step S22, and a temperature decrease step S23. In the temperature raising step S21, preferably, the glass plate G1 is heated from room temperature to the peak temperature at a speed of +1~+16°C/min. In the holding step S22, it is preferable to hold the glass plate G1 for 0 to 120 minutes at a holding temperature within the range from the peak temperature to the peak temperature after the temperature increase step S21. In the cooling step S23, preferably after the holding step S22, the glass plate G1 is heated in the temperature range from the holding temperature to the strain point of the glass plate G1 -50°C at a speed of -6.0~-0.3°C/min Cool down.

此外,降溫步驟S23較佳為包含各自降溫速度不同的第一降溫步驟S23A、及第二降溫步驟S23B。位於高溫側的第一降溫步驟S23A較佳為降溫速度比位於低溫側的第二降溫步驟S23B為更慢。在第一降溫步驟S23A中,較佳為在由保持步驟S22中的保持溫度至玻璃板G1之應變點-50℃的溫度區域中,以-3.0~-0.3℃/min的速度,將玻璃板G1降溫。在第二降溫步驟S23B中,較佳為在第一降溫步驟S23A之後,在應變點-50℃以下的溫度區域中,以-5.8~-1.1℃/min的速度降溫。 In addition, the cooling step S23 preferably includes a first cooling step S23A and a second cooling step S23B with different cooling speeds. Preferably, the cooling speed of the first cooling step S23A on the high temperature side is slower than that of the second cooling step S23B on the low temperature side. In the first cooling step S23A, preferably in the temperature range from the holding temperature in the holding step S22 to the strain point of the glass plate G1 -50°C, the glass plate is cooled at a speed of -3.0~-0.3°C/min. G1 cools down. In the second cooling step S23B, preferably after the first cooling step S23A, the temperature is lowered at a rate of -5.8~-1.1°C/min in a temperature region below the strain point -50°C.

在本實施形態中,玻璃板G1係如圖2所示在積層有複數枚的積層體U的狀態下予以熱處理。積層體U係具備有:支持構件P1、複數玻璃板G1、按壓構件P2。支持構件P1及按壓構件P2係分別具有可與玻璃板G1的主表面全面接觸的接觸面,而且具有耐熱性的構件。支持構件P1及按壓構件P2係例如板狀或塊狀的耐火物,較佳為莫來石(mullite)系耐火物。積層體U係構成為以配置在最下段的支持構件P1、與配置在最上段的按壓構件P2,夾持積層有複數枚的玻璃板G1。 In this embodiment, as shown in FIG. 2, the glass plate G1 is heat-processed in the state which laminated|stacked the laminated body U of several sheets. The layered body U system includes a support member P1, a plurality of glass plates G1, and a pressing member P2. The support member P1 and the pressing member P2 each have a contact surface that can come into contact with the entire surface of the main surface of the glass plate G1, and are heat-resistant members. The support member P1 and the pressing member P2 are, for example, plate-shaped or block-shaped refractories, preferably mullite-based refractories. The laminated body U is comprised so that the glass plate G1 which laminated|stacked several sheets is sandwiched between the support member P1 arrange|positioned at the lowermost stage, and the pressing member P2 arrange|positioned at the uppermost stage.

在如上所示之積層體U的狀態下進行熱處理,藉此在對玻璃板G1以厚度方向施加均一荷重的狀態下予以熱處理。藉由如上所示之處理,可輕易減低複數玻璃板G1及根據該玻璃板G1所得之圓盤狀玻璃G3、G4的翹曲。為了更加確實享受如上所示之效果,較佳為將支持構件P1之作為接觸面(支持面)的上面、與按壓構件P2之作為接觸面(按壓面)的下面的各個,大於玻璃板G1的主表面。其中,支持構件P1的接觸面、與按壓構件P2的接觸面亦可各個為與玻璃板G1的主表面相同的大小,亦可為較小。 The heat treatment is performed in a state where a uniform load is applied to the glass plate G1 in the thickness direction by performing the heat treatment in the state of the laminate U as described above. The warpage of the plurality of glass plates G1 and the disc-shaped glasses G3 and G4 obtained from the glass plate G1 can be easily reduced by the above-mentioned treatment. In order to enjoy the above effects more reliably, it is preferable that the upper surface of the supporting member P1 as the contact surface (supporting surface) and the lower surface of the pressing member P2 as the contact surface (pressing surface) be larger than the glass plate G1. main surface. However, the contact surface of the support member P1 and the contact surface of the pressing member P2 may be the same size as the main surface of the glass plate G1, or may be smaller.

玻璃板G1較佳為在表面附著有滑石粉等脫模粉的狀態下進行積層。藉由使脫模粉附著在玻璃板G1,可防止在熱處理時或熱處理後,在玻璃表面形成缺陷。其中,亦可在複數玻璃板G1各個之間,介在氧化鋁紙等脫模薄片來進行積層,來取代使脫模粉附著。該等作為脫模材的脫模粉及脫模薄片較佳為在熱處理後由熱處理玻璃板G2去除。 It is preferable that the glass plate G1 is laminated|stacked in the state which the mold release powder, such as talc powder, adhered to the surface. By adhering the mold release powder to the glass plate G1, it is possible to prevent the formation of defects on the glass surface during or after the heat treatment. Here, instead of adhering the mold release powder, it may be laminated with a mold release sheet such as alumina paper between each of the plurality of glass plates G1. It is preferable that these mold release powders and mold release sheets which are mold release materials are removed from the heat-treated glass plate G2 after heat treatment.

熱處理工程S2的處理係可使用例如圖3所示之熱處理裝置T來進行。熱處理裝置T係具備有:輸送機M、及熱處理爐H。輸送機M係連續搬送積層體U的搬送裝置,例如滾輪輸送機。熱處理爐H係可控制內部的溫度氣體環境的加熱裝置。熱處理爐H係形成沿著輸送機M的流動方向延伸的形狀,配列複數個可以該延長方向個別調整輸出的熱源。藉由輸送機M被搬送的積層體U係由被設在熱處理爐H之一方端的入口,被導入至熱處理爐H內,在爐內被熱處理後,由被設在另一方端的出口,被導出至爐外。在如上所示之熱處理裝置T中,藉由調整輸送機M的搬送速度及熱處理爐H的各熱源的輸出,可以上述各步驟的溫度條件,將玻璃板G1進行熱處理。 The treatment of the heat treatment step S2 can be performed using, for example, the heat treatment apparatus T shown in FIG. 3 . The heat treatment apparatus T includes a conveyor M and a heat treatment furnace H. The conveyor M is a conveying device that continuously conveys the layered body U, for example, a roller conveyor. The heat treatment furnace H is a heating device capable of controlling the internal temperature and gas environment. The heat treatment furnace H has a shape extending along the flow direction of the conveyor M, and a plurality of heat sources whose output can be individually adjusted in the extending direction are arranged. The laminated body U conveyed by the conveyor M is introduced into the heat treatment furnace H through the inlet provided at one end of the heat treatment furnace H, and after being heat treated in the furnace, it is led out through the outlet provided at the other end. out of the furnace. In the heat treatment apparatus T shown above, by adjusting the conveyance speed of the conveyor M and the output of each heat source of the heat treatment furnace H, the glass plate G1 can be heat treated under the temperature conditions of the above-mentioned steps.

例如,若玻璃板G1的應變點為530℃、徐冷 點為570℃時,可以圖4~6所示之溫度條件,進行熱處理。圖4~6係顯示本實施形態之熱處理工程之溫度條件之一例的圖。在圖4~6的圖表中,分別以橫軸表示時間,縱軸表示處理玻璃板G1的溫度。在圖4所示之熱處理中,首先以10℃/min升溫至620℃的波峰溫度(升溫步驟S21),以波峰溫度保持90分鐘(保持步驟S22),接著,在以-0.7℃/min降溫至比相當於應變點-50℃的480℃更為低溫的400℃之後(第一降溫步驟S23A),以-3.2℃/min降溫至室溫(第二降溫步驟S23B)。此外,在圖5所示之熱處理中,首先以15℃/min升溫至620℃的波峰溫度(升溫步驟S21),以波峰溫度保持20分鐘(保持步驟S22),接著,在以-1.1℃/min降溫至相當於應變點-50℃的480℃之後(第一降溫步驟S23A),以-4.8℃/min降溫至室溫(第二降溫步驟S23B)。在圖6所示之熱處理中,首先以14℃/min升溫至590℃的波峰溫度(升溫步驟S21),以波峰溫度保持20分鐘(保持步驟S22),接著,在以-0.9℃/min降溫至相當於應變點-50℃的480℃之後(第一降溫步驟S23A),以-3.2℃/min降溫至室溫(第二降溫步驟S23B)。在此,圖5及圖6所示之熱處理係以比圖4所示之熱處理更為短時間結束,因此具有製造效率佳的優點。此外,若顯示在螢光燈下之目視檢查之一例,獲得具有表面缺陷的玻璃板的發生確率,在圖4所示之熱處理中為1.1%(302枚/28000枚)、在圖5所示之熱處理中為1.0%(292枚/28000枚)、在圖 6所示之熱處理中為0.3%(19枚/7200枚)的結果。以在圖6所示之熱處理中表面缺陷成為最少的理由而言,被認為將圖6所示之熱處理的波峰溫度設定為比圖4及圖5所示之熱處理的波峰溫度為更低之故。 For example, if the strain point of the glass plate G1 is 530°C and the slow cooling point is 570°C, the heat treatment can be performed under the temperature conditions shown in Figs. 4 to 6 . 4 to 6 are diagrams showing an example of temperature conditions in the heat treatment process of the present embodiment. In the graphs of FIGS. 4 to 6 , the horizontal axis represents time, and the vertical axis represents the temperature of the processing glass plate G1 . In the heat treatment shown in FIG. 4 , the temperature is first raised to a peak temperature of 620° C. at 10° C./min (heating step S21 ), maintained at the peak temperature for 90 minutes (holding step S22 ), and then lowered at -0.7° C./min. After reaching 400°C lower than 480°C which corresponds to the strain point -50°C (first cooling step S23A), the temperature is lowered to room temperature at -3.2°C/min (second cooling step S23B). In addition, in the heat treatment shown in FIG. 5, firstly, the temperature was raised to a peak temperature of 620°C at 15°C/min (heating step S21 ), maintained at the peak temperature for 20 minutes (holding step S22 ), and then at -1.1°C/min. After min cooling to 480°C which is equivalent to the strain point -50°C (first cooling step S23A), the temperature is lowered to room temperature at -4.8°C/min (second cooling step S23B). In the heat treatment shown in FIG. 6 , the temperature is first raised to a peak temperature of 590° C. at 14° C./min (heating step S21 ), maintained at the peak temperature for 20 minutes (holding step S22 ), and then lowered at -0.9° C./min. After reaching 480°C which corresponds to the strain point -50°C (first cooling step S23A), the temperature is lowered to room temperature at -3.2°C/min (second cooling step S23B). Here, the heat treatment shown in FIG. 5 and FIG. 6 is completed in a shorter time than the heat treatment shown in FIG. 4, and thus has the advantage of good manufacturing efficiency. In addition, according to an example of visual inspection under a fluorescent lamp, the occurrence rate of glass plates with surface defects obtained is 1.1% (302 pieces/28,000 pieces) in the heat treatment shown in FIG. 4, and shown in FIG. 5. 1.0% (292 pieces/28,000 pieces) in the heat treatment, and 0.3% (19 pieces/7,200 pieces) in the heat treatment shown in Fig. 6 . For the reason that surface defects are minimized in the heat treatment shown in FIG. 6 , it is considered that the peak temperature of the heat treatment shown in FIG. 6 is set to be lower than the peak temperature of the heat treatment shown in FIGS. 4 and 5 . .

其中,上述熱處理裝置T為一例,亦可使用任意裝置來進行上述處理。例如,亦可使用周知的電氣爐、瓦斯爐等,連續進行上述處理,亦可使用批次式裝置來個別處理。 Here, the above-mentioned heat treatment apparatus T is an example, and any apparatus may be used to perform the above-mentioned treatment. For example, a well-known electric furnace, a gas furnace, etc. may be used, and the said process may be performed continuously, and a batch type apparatus may be used for individual process.

上述熱處理後工程S2前後的玻璃板G1的熱收縮率係以20ppm以下為佳,較佳為15ppm以下、12ppm以下、10ppm以下、尤其8ppm以下。 The thermal contraction rate of the glass plate G1 before and after the process S2 after the heat treatment is preferably 20 ppm or less, preferably 15 ppm or less, 12 ppm or less, 10 ppm or less, especially 8 ppm or less.

在本實施形態中,接續熱處理工程S2,執行圓形切斷工程S3的處理。 In the present embodiment, the process of the circular cutting process S3 is performed following the heat treatment process S2.

在圓形切斷工程S3中,由在上述熱處理工程S2中所得之熱處理玻璃板G2切出圓盤狀玻璃G3。具體而言,例如使用鑽石晶片等,在熱處理玻璃板G2的其中一方主表面形成圓形的劃割線,沿著該劃割線進行割斷,藉此獲得如圖7所示之圓盤狀玻璃G3。 In the circular cutting process S3, the disk-shaped glass G3 is cut out from the heat-treated glass plate G2 obtained in the above-mentioned heat-treatment process S2. Specifically, a circular scribe line is formed on one of the main surfaces of the heat-treated glass plate G2 using, for example, a diamond wafer or the like, and the scribe line is cut along the scribe line to obtain the disk-shaped glass G3 shown in FIG. 7 .

圓盤狀玻璃G3的尺寸亦可任意設定,但是以直徑100~500mm的晶圓狀(大致正圓狀)為佳,尤其以150~450mm為佳。若為如上所示之形狀,可在半導體封裝體之製造工程中適當使用。 The size of the disc-shaped glass G3 can be arbitrarily set, but it is preferably a wafer shape (substantially circular shape) with a diameter of 100 to 500 mm, and particularly preferably 150 to 450 mm. If it is the shape shown above, it can be used suitably in the manufacturing process of a semiconductor package.

其中,上述切斷方法為一例,亦可使用其他任意切斷方法。例如,亦可將雷射光照射至熱處理玻璃板 G2而熔斷(雷射熔斷)、或藉由使其發生裂痕(雷射割斷)而將熱處理玻璃板G2切斷成圓形,來獲得圓盤狀玻璃G3。此外,亦可在熱處理玻璃板G2的主表面形成圓形的遮罩,且將未形成有遮罩的部分進行蝕刻,藉此獲得圓盤狀玻璃G3。 However, the above-mentioned cutting method is an example, and other arbitrary cutting methods may be used. For example, the heat-treated glass plate G2 may be cut into a circular shape by irradiating the heat-treated glass plate G2 with laser light to melt (laser melting), or by causing a crack (laser cutting) to cut the heat-treated glass plate G2 into a circular shape to obtain a disk shape. Glass G3. In addition, a circular mask may be formed on the main surface of the heat-treated glass plate G2, and the portion where the mask is not formed may be etched to obtain the disk-shaped glass G3.

此外,所得之圓盤狀玻璃G3的端面亦可任意加工。例如,圓盤狀玻璃G3的端面亦可藉由研削工具等予以倒角加工,亦可以研磨工具予以研磨,亦可藉由雷射光等被加熱而平滑化,亦可藉由氫氟酸等予以蝕刻處理。 Moreover, the end surface of the obtained disk-shaped glass G3 can also be processed arbitrarily. For example, the end face of the disk-shaped glass G3 may be chamfered by a grinding tool, etc., may be ground by a grinding tool, may be smoothed by heating by a laser beam, etc., or may be smoothed by hydrofluoric acid or the like Etching treatment.

其中,若在熱處理工程S2的處理前後,玻璃板G1的膨脹量或收縮量相對較大時,圓形切斷工程S3的處理係以如上所述在熱處理工程S2之後進行為佳。若為如上所示之順序,在被切斷成圓盤狀之後,不易發生膨脹或收縮,因此容易獲得高尺寸精度的圓盤狀玻璃G3、G4。另一方面,若熱處理工程S2的處理前後的玻璃板G1的膨脹量或收縮量相對較小時、或在之後的加工工程中確保尺寸精度時,亦可在先進行圓形切斷工程的處理之後,再進行熱處理工程的處理。亦即,亦可在積層圓盤狀玻璃的狀態下,執行上述熱處理工程的處理。 Among them, when the amount of expansion or shrinkage of the glass sheet G1 is relatively large before and after the treatment of the heat treatment step S2, the treatment of the circular cutting step S3 is preferably performed after the heat treatment step S2 as described above. In the order shown above, after being cut into a disk shape, expansion and shrinkage are unlikely to occur, so that the disk-shaped glasses G3 and G4 with high dimensional accuracy can be easily obtained. On the other hand, when the amount of expansion or shrinkage of the glass sheet G1 before and after the treatment of the heat treatment step S2 is relatively small, or when the dimensional accuracy is ensured in the subsequent processing step, the processing of the circular cutting step may be performed first. After that, the heat treatment process is performed. That is, the process of the above-mentioned heat treatment process can also be performed in the state which laminated|stacked the disk-shaped glass.

在本實施形態中,接續圓形切斷工程S3,執行切口形成工程S4的處理。 In the present embodiment, the process of the notch forming process S4 is performed following the circular cutting process S3.

在切口形成工程S4中,在以上述圓形切斷工程S3中所得之圓盤狀玻璃G3形成切口部N,且獲得如圖8所示之圓盤狀玻璃G4。在本實施形態中,切口部N係 例如設在圓盤狀玻璃G4的端部的凹陷。切口部N係可藉由例如將柱狀的旋轉研削工具推碰至圓盤狀玻璃G3的端面來形成。如上所示之切口部N係有用於在半導體製造工程中將圓盤狀玻璃G4定位時等。 In the notch formation process S4, the notch part N is formed in the disk-shaped glass G3 obtained by the said circular cutting process S3, and the disk-shaped glass G4 shown in FIG. 8 is obtained. In the present embodiment, the notch portion N is, for example, a depression provided at the end of the disk-shaped glass G4. The notch part N can be formed by, for example, pushing a columnar rotary grinding tool against the end face of the disk-shaped glass G3. The notch portion N shown above is used for positioning the disk-shaped glass G4 in a semiconductor manufacturing process, or the like.

其中,上述切口部N的形狀為一例,亦可形成任意形狀的切口部。例如,切口部N亦可為將圓盤狀玻璃G3在直線上進行切斷而成之定向平面。此外,切口部N亦可為在同一圓盤狀玻璃G4設有複數。 In addition, the shape of the said notch part N is an example, and the notch part of arbitrary shapes may be formed. For example, the notch part N may be the orientation plane which cut|disconnected the disk-shaped glass G3 on a straight line. In addition, a plurality of notches N may be provided in the same disk-shaped glass G4.

此外,切口部N及圓盤狀玻璃G4的外周端面可被任意加工。例如,圓盤狀玻璃G3的切口部N及端面亦可藉由研削工具等予以倒角加工,亦可以研磨工具予以研磨,亦可被照射雷射光而予以平滑化,亦可藉由氫氟酸等予以蝕刻處理。 In addition, the notch part N and the outer peripheral end surface of the disk-shaped glass G4 can be processed arbitrarily. For example, the notch portion N and the end surface of the disk-shaped glass G3 may be chamfered by a grinding tool, ground by a grinding tool, smoothed by irradiating laser light, or smoothed by hydrofluoric acid. etc. to be etched.

其中,若在半導體製造工程中不需要切口部N時,亦可省略切口形成工程S4的處理。 However, if the notch portion N is not required in the semiconductor manufacturing process, the process of the notch forming process S4 may be omitted.

其中,本發明之圓盤狀玻璃之製造方法亦可在上述工程中任意追加如下所述之工程。 In addition, in the manufacturing method of the disk-shaped glass of this invention, the following process may be added arbitrarily to the said process.

例如,亦可在圓形切斷工程之後,追加將圓盤狀玻璃G3、G4的主表面的全部或一部分進行研磨的表面研磨工程。藉由上述熱處理工程的處理,圓盤狀玻璃G3、G4係具有高平坦性,但是藉由研磨主表面,更加容易減低全體板厚偏差,而且亦容易減低翹曲量。以研磨處理的方法而言,可採用各種方法,惟較佳為以一對研磨墊夾入圓盤狀玻璃的兩面,一邊使圓盤狀玻璃與一對研磨墊 一起旋轉,一邊將圓盤狀玻璃進行研磨處理的方法。此外,一對研磨墊係以外徑不同為佳,研磨時間歇式地以圓盤狀玻璃的一部分由研磨墊露出的方式進行研磨處理為佳。藉此,容易減低全體板厚偏差,而且亦容易減低翹曲量。其中,在研磨處理中,研磨深度並未特別限定,惟研磨深度較佳為50μm以下、30μm以下、20μm以下、尤其10μm以下。研磨深度愈小,圓盤狀玻璃G3、G4的生產性愈為提升。 For example, you may add the surface grinding|polishing process of grinding|polishing all or a part of the main surfaces of the disk-shaped glass G3, G4 after a circular cutting process. By the above-mentioned heat treatment process, the disc-shaped glass G3 and G4 have high flatness, but by grinding the main surface, it is easier to reduce the overall thickness variation, and it is also easy to reduce the amount of warpage. As a method of polishing, various methods can be used, but preferably a pair of polishing pads are sandwiched between both surfaces of the disc-shaped glass, and the disc-shaped glass is rotated together with the pair of polishing pads. A method of grinding glass. In addition, it is preferable that a pair of polishing pads have different outer diameters, and it is preferable to perform polishing treatment intermittently so that a part of the disk-shaped glass is exposed from the polishing pad during polishing. Thereby, it becomes easy to reduce the thickness variation of the whole board, and also it becomes easy to reduce the warpage amount. Among them, in the polishing treatment, the polishing depth is not particularly limited, but the polishing depth is preferably 50 μm or less, 30 μm or less, 20 μm or less, and particularly 10 μm or less. The smaller the grinding depth, the higher the productivity of the disc glass G3 and G4.

此外,亦可追加將圓盤狀玻璃G3、G4的表面全體或一部分,藉由離子交換法等進行化學強化處理的強化工程。此外,亦可在上述各工程的前後,追加洗淨及乾燥工程。 Moreover, you may add the strengthening process which chemically strengthens the whole or a part of the surface of the disk-shaped glass G3 and G4 by the ion exchange method. In addition, washing and drying processes may be added before and after each of the above-mentioned processes.

藉由上述方法所得之圓盤狀玻璃G3、G4較佳為具有以下特性。 It is preferable that the disk-shaped glass G3, G4 obtained by the said method has the following characteristics.

圓盤狀玻璃G3、G4的翹曲量較佳為40μm以下、30μm以下、25μm以下、1~20μm、尤其5~未達20μm。此外,熱處理玻璃板G2及圓盤狀玻璃G3、G4全體板厚偏差較佳為未達2μm、1.5μm以下、1μm以下、未達1μm、0.8μm以下、0.1~0.9μm、尤其0.2~0.7μm。若翹曲量為如上所示之範圍內,在半導體製造工程中,可良好地支持半導體,可以高生產性製造半導體。在此,「翹曲量」係與半導體基板中的Warp同樣地,可藉由載置於水平面上的圓盤狀玻璃G3、G4中的最高位置與最小平方焦點面之間的距離A、及該最低位置與最小平方平面之間 的距離B的合計(A+B)來求出。翹曲量係可藉由例如KOBELCO科研公司製的SBW-331ML/d來測定。 The amount of warpage of the disk-shaped glasses G3 and G4 is preferably 40 μm or less, 30 μm or less, 25 μm or less, 1 to 20 μm, especially 5 to less than 20 μm. Further, the thickness variation of the heat-treated glass plate G2 and the disk-shaped glass G3 and G4 as a whole is preferably less than 2 μm, less than 1.5 μm, less than 1 μm, less than 1 μm, less than 0.8 μm, 0.1 to 0.9 μm, especially 0.2 to 0.7 μm . When the warpage amount is within the range shown above, the semiconductor can be favorably supported in the semiconductor manufacturing process, and the semiconductor can be manufactured with high productivity. Here, the "warpage amount" can be determined by the distance A between the highest position and the least square focal plane in the disk-shaped glasses G3 and G4 placed on the horizontal plane, as in the case of Warp in the semiconductor substrate, and The total (A+B) of the distances B between the lowest position and the least square plane is obtained. The amount of warpage can be measured by, for example, SBW-331ML/d manufactured by KOBELCO SCIENTIFIC CO., LTD.

圓盤狀玻璃G3、G4的表面的算術平均粗糙度Ra較佳為10nm以下、5nm以下、2nm以下、1nm以下、尤其0.5nm以下。表面的算術平均粗糙度Ra愈小,愈容易提高加工處理的精度。尤其可提高配線精度,因此可進行高密度的配線。此外,圓盤狀玻璃的強度提升,圓盤狀玻璃及積層體不易破損。此外,可增加圓盤狀玻璃的再利用次數(支持次數)。其中,「算術平均粗糙度Ra」係可藉由原子力顯微鏡(AFM)來測定。 The arithmetic mean roughness Ra of the surfaces of the disk-shaped glasses G3 and G4 is preferably 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, particularly 0.5 nm or less. The smaller the arithmetic mean roughness Ra of the surface, the easier it is to improve the accuracy of the processing. In particular, since wiring accuracy can be improved, high-density wiring can be performed. In addition, the strength of the disk-shaped glass is improved, and the disk-shaped glass and the laminated body are not easily damaged. In addition, the number of times of reuse (the number of times of support) of the disk-shaped glass can be increased. Here, the "arithmetic mean roughness Ra" can be measured by an atomic force microscope (AFM).

在圓盤狀玻璃G3、G4中,30~380℃的溫度範圍中的平均熱膨脹係數較佳為0×10-7/℃以上、而且165×10-7/℃以下。藉此,使加工基板與圓盤狀玻璃的熱膨脹係數容易整合。接著,若兩者的熱膨脹係數整合,在加工處理時,容易抑制加工基板的尺寸變化(尤其翹曲變形)。結果,對加工基板的其中一方表面,可高密度配線,而且亦可正確形成焊料凸塊。其中,「30~380℃的溫度範圍中的平均熱膨脹係數」係可以熱膨脹儀進行測定。 In the disk-shaped glasses G3 and G4, the average thermal expansion coefficient in the temperature range of 30 to 380°C is preferably 0×10 -7 /°C or higher and 165×10 -7 /°C or lower. Thereby, the thermal expansion coefficients of the processed substrate and the disk-shaped glass can be easily adjusted. Next, when the thermal expansion coefficients of the two are integrated, dimensional changes (especially warpage deformation) of the processed substrate can be easily suppressed during processing. As a result, high-density wiring can be performed on one of the surfaces of the processed substrate, and solder bumps can be accurately formed. Among them, the "average thermal expansion coefficient in the temperature range of 30 to 380°C" can be measured by a thermal dilatometer.

30~380℃的溫度範圍中的平均熱膨脹係數係若在加工基板內,半導體晶片的比例少、且密封材的比例多時,以使其上升為佳,相反地,若在加工基板內,半導體晶片的比例多、且密封材的比例少時,以使其降低為佳。 The average thermal expansion coefficient in the temperature range of 30 to 380°C is preferably increased if the proportion of semiconductor wafers is small and the proportion of sealing materials is large in the processed substrate. When the ratio of the wafer is large and the ratio of the sealing material is small, it is preferable to reduce it.

若使圓盤狀玻璃G3、G4的30~380℃的溫度範圍中的平均熱膨脹係數設為0×10-7/℃以上、而且未達50×10-7/℃時,圓盤狀玻璃較佳為以質量%計,含有SiO2 55~75%、Al2O3 15~30%、Li2O 0.1~6%、Na2O+K2O 0~8%、MgO+CaO+SrO+BaO 0~10%,作為玻璃組成,或者亦較佳為含有SiO2 55~75%、Al2O3 10~30%、Li2O+Na2O+K2O 0~0.3%、MgO+CaO+SrO+BaO 5~20%。若使30~380℃的溫度範圍中的平均熱膨脹係數設為50×10-7/℃以上、而且未達75×10-7/℃時,圓盤狀玻璃較佳為以質量%計,含有SiO2 55~70%、Al2O3 3~15%、B2O3 5~20%、MgO 0~5%、CaO 0~10%、SrO 0~5%、BaO 0~5%、ZnO 0~5%、Na2O 5~15%、K2O 0~10%,作為玻璃組成。若將30~380℃的溫度範圍中的平均熱膨脹係數設為75×10-7/℃以上、而且85×10-7/℃以下時,圓盤狀玻璃較佳為以質量%計,含有SiO2 60~75%、Al2O3 5~15%、B2O3 5~20%、MgO 0~5%、CaO 0~10%、SrO 0~5%、BaO 0~5%、ZnO 0~5%、Na2O 7~16%、K2O 0~8%,作為玻璃組成。若將30~380℃的溫度範圍中的平均熱膨脹係數設為超過85×10-7/℃、而且120×10-7/℃以下時,圓盤狀玻璃較佳為以質量%計,含有SiO2 55~70%、Al2O3 3~13%、B2O3 2~8%、MgO 0~5%、CaO 0~10%、SrO 0~5%、BaO 0~5%、ZnO 0~5%、Na2O 10~21%、K2O 0~5%,作為玻璃組成。若將30~380℃的溫度範圍中的平均熱膨脹係數設為超過120×10-7/℃、而且 165×10-7/℃以下時,圓盤狀玻璃較佳為以質量%計,含有SiO2 53~65%、Al2O3 3~13%、B2O3 0~5%、MgO 0.1~6%、CaO 0~10%、SrO 0~5%、BaO 0~5%、ZnO 0~5%、Na2O+K2O 20~40%、Na2O 12~21%、K2O 7~21%,作為玻璃組成。若如上所示,容易將熱膨脹係數規制在所希望的範圍,並且耐失透性提升,因此容易成形全體板厚偏差小的圓盤狀玻璃。 When the average thermal expansion coefficient in the temperature range of 30 to 380°C of the disc glasses G3 and G4 is 0×10 -7 /°C or more, and less than 50×10 -7 /°C, the disc glass is more Preferably, it contains 55~75% of SiO2 , 15~30% of Al2O3 , 0.1~6% of Li2O , 0 ~ 8 % of Na2O + K2O, MgO+CaO+SrO+ in mass % BaO 0~10%, as a glass composition, or preferably 55~75% SiO 2 , 10~30% Al 2 O 3 , Li 2 O+Na 2 O+K 2 O 0~0.3%, MgO+ CaO+SrO+BaO 5~20%. When the average thermal expansion coefficient in the temperature range of 30 to 380°C is 50×10 -7 /°C or more and less than 75×10 -7 /°C, the disc-shaped glass preferably contains, in mass %, SiO 2 55~70%, Al 2 O 3 3~15%, B 2 O 3 5~20%, MgO 0~5%, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0~5%, Na 2 O 5~15%, K 2 O 0~10%, as glass composition. When the average thermal expansion coefficient in the temperature range of 30 to 380°C is 75×10 -7 /°C or more and 85×10 -7 /°C or less, the disc glass preferably contains SiO in mass %. 2 60~75%, Al 2 O 3 5~15%, B 2 O 3 5~20%, MgO 0~5%, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0 ~5%, Na 2 O 7~16%, K 2 O 0~8%, as glass composition. When the average thermal expansion coefficient in the temperature range of 30 to 380°C is more than 85×10 -7 /°C and 120×10 -7 /°C or less, the disc glass preferably contains SiO in mass %. 2 55~70%, Al 2 O 3 3~13%, B 2 O 3 2~8%, MgO 0~5%, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0 ~5%, Na 2 O 10~21%, K 2 O 0~5%, as glass composition. When the average thermal expansion coefficient in the temperature range of 30 to 380°C is more than 120 × 10 -7 /°C and 165 × 10 -7 /°C or less, the disc-shaped glass preferably contains SiO in mass %. 2 53~65%, Al 2 O 3 3~13%, B 2 O 3 0~5%, MgO 0.1~6%, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0 ~5%, Na 2 O+K 2 O 20~40%, Na 2 O 12~21%, K 2 O 7~21%, as glass composition. As described above, it is easy to regulate the thermal expansion coefficient within a desired range, and the devitrification resistance is improved, so that it is easy to form a disk-shaped glass with a small variation in the overall plate thickness.

圓盤狀玻璃G3、G4的應變點較佳為480℃以上、500℃以上、510℃以上、520℃以上、尤其530℃以上。應變點愈高,愈容易減低熱收縮率。其中,「應變點」係指根據ASTM C336的方法所測定出的值。 The strain points of the disk-shaped glasses G3 and G4 are preferably 480°C or higher, 500°C or higher, 510°C or higher, 520°C or higher, particularly 530°C or higher. The higher the strain point, the easier it is to reduce thermal shrinkage. Here, "strain point" means the value measured by the method of ASTM C336.

圓盤狀玻璃G3、G4的楊氏模數較佳為65GPa以上、67GPa以上、68GPa以上、69GPa以上、70GPa以上、71GPa以上、72GPa以上、尤其73GPa以上。若楊氏模數過低,難以維持積層體的剛性,容易發生加工基板的變形、翹曲、破損。 The Young's modulus of the disc glass G3 and G4 is preferably 65GPa or more, 67GPa or more, 68GPa or more, 69GPa or more, 70GPa or more, 71GPa or more, 72GPa or more, especially 73GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and deformation, warpage, and breakage of the processed substrate are likely to occur.

圓盤狀玻璃G3、G4的液相溫度較佳為未達1150℃、1120℃以下、1100℃以下、1080℃以下、1050℃以下、1010℃以下、980℃以下、960℃以下、950℃以下、尤其940℃以下。若如上所示,以下拉法,尤其以溢流下拉法,容易成形圓盤狀玻璃,因此容易製作板厚小的圓盤狀玻璃,並且可減低成形後的板厚偏差。此外,在圓盤狀玻璃之製造工程時,容易防止發生失透結晶且圓盤狀玻璃的生產性降低的事態。在此,「液相溫度」係可通過 標準篩30篩孔(500μm),將殘留在50篩孔(300μm)的玻璃粉末放入至鉑晶舟之後,在溫度梯度爐中保持24小時,藉由測定結晶析出的溫度來算出。 The liquidus temperature of the disc glass G3 and G4 is preferably not more than 1150°C, 1120°C or lower, 1100°C or lower, 1080°C or lower, 1050°C or lower, 1010°C or lower, 980°C or lower, 960°C or lower, and 950°C or lower. , especially below 940℃. As described above, it is easy to form the disc-shaped glass by the down-draw method, especially the overflow down-draw method, so that the disc-shaped glass with a small plate thickness can be easily produced, and the variation in plate thickness after forming can be reduced. Moreover, at the time of the manufacturing process of the disc-shaped glass, it is easy to prevent a situation in which devitrification crystallisation occurs and the productivity of the disc-shaped glass falls. Here, the "liquidus temperature" can pass through a standard sieve with 30 meshes (500 μm), put the glass powder remaining in 50 meshes (300 μm) into a platinum boat, and keep it in a temperature gradient furnace for 24 hours. Calculated by measuring the temperature at which crystals are precipitated.

圓盤狀玻璃G3、G4的液相溫度中的黏度較佳為104.6dPa‧s以上、105.0dPa‧s以上、105.2dPa‧s以上、105.4dPa‧s以上、105.6dPa‧s以上、尤其105.8dPa‧s以上。若如上所示,以下拉法,尤其以溢流下拉法,容易成形圓盤狀玻璃,因此容易製作板厚小的圓盤狀玻璃,並且可減低成形後的板厚偏差。此外,在圓盤狀玻璃之製造工程時,容易防止發生失透結晶且圓盤狀玻璃的生產性降低的事態。在此,「液相溫度中的黏度」係可以鉑球上拉法進行測定。其中,液相溫度中的黏度為成形性的指標,液相溫度中的黏度愈高,成形性愈為提升。 The viscosity in the liquidus temperature of the disc glass G3 and G4 is preferably 10 4.6 dPa·s or more, 10 5.0 dPa·s or more, 10 5.2 dPa·s or more, 10 5.4 dPa·s or more, 10 5.6 dPa·s or more or more, especially 10 5.8 dPa·s or more. As described above, it is easy to form the disc-shaped glass by the down-draw method, especially the overflow down-draw method, so that the disc-shaped glass with a small plate thickness can be easily produced, and the variation in plate thickness after forming can be reduced. Moreover, it is easy to prevent a situation in which devitrification crystallization occurs and the productivity of the disc-shaped glass falls during the manufacturing process of the disc-shaped glass. Here, the "viscosity at liquidus temperature" can be measured by the platinum ball pull-up method. Among them, the viscosity in the liquidus temperature is an index of the formability, and the higher the viscosity in the liquidus temperature, the better the formability.

圓盤狀玻璃G3、G4之102.5dPa‧s中的溫度較佳為1580℃以下、1500℃以下、1450℃以下、1400℃以下、1350℃以下、尤其1200~1300℃。若102.5dPa‧s中的溫度變高,熔融性會降低,圓盤狀玻璃的製造成本高漲。在此,「102.5dPa‧s中的溫度」係可以鉑球上拉法進行測定。其中,102.5dPa‧s中的溫度係相當於熔融溫度,該溫度愈低,熔融性愈為提升。 The temperature at 10 2.5 dPa·s of the disc glass G3 and G4 is preferably 1580°C or lower, 1500°C or lower, 1450°C or lower, 1400°C or lower, 1350°C or lower, especially 1200 to 1300°C. When the temperature in 10 2.5 dPa·s becomes high, the meltability decreases, and the manufacturing cost of the disk-shaped glass increases. Here, the "temperature in 10 2.5 dPa·s" can be measured by the platinum ball pull-up method. Among them, the temperature in 10 2.5 dPa·s corresponds to the melting temperature, and the lower the temperature, the better the meltability.

圓盤狀玻璃G3、G4係玻璃主表面的中心部的應力與端部的應力的差為0~10MPa。在此所稱之端部係指離端面為100mm的任意部位。若為如上所示之應力特性,被認為以基板全體,翹曲成碗型、鞍型、谷型的形 狀。上述形狀與局部翹曲的基板相比,不易發生基板上的半導體晶片在生產中脫落的不良情形,可以高生產性製造。(若作為半導體支持基板來使用時,在半導體之製造工程中不易變形,可以高生產性製造半導體。藉由上述熱處理工程S2,內部應力受到緩和,因此圓盤狀玻璃G3、G4的應力被認為成為如上所述之範圍)。 The difference between the stress at the center of the main surface of the disk-shaped glass G3 and G4-based glass and the stress at the edge is 0 to 10 MPa. The end part here refers to any part 100mm away from the end face. With the stress characteristics shown above, it is considered that the entire substrate is warped in the shape of a bowl, a saddle, or a valley. The above-mentioned shape is less likely to cause the inconvenience of the semiconductor wafer on the substrate falling off during production than a locally warped substrate, and can be manufactured with high productivity. (When used as a semiconductor support substrate, it is not easily deformed in the semiconductor manufacturing process, and semiconductors can be manufactured with high productivity. The internal stress is relieved by the above-mentioned heat treatment process S2, so the stress of the disk-shaped glasses G3 and G4 is considered to be within the range described above).

圓盤狀玻璃G3、G4目視下為板狀,但是若放大視時,具有使用時被容許的程度的微小翹曲或凹凸形狀。例如,圓盤狀玻璃G3、G4係形成如圖9A、9B至圖11A、11B所示之碗型、鞍型、谷型的形狀。圖9A、9B至圖11A、11B分別以厚度方向強調藉由KOBELCO科研公司製的SBW-331ML/d所測定出之本實施形態之圓盤狀玻璃的形狀之例所顯示的圖。圖9A、圖10A、圖11A係以濃淡顯示將圓盤狀玻璃G3、G4平面視時的高低形狀者,愈深色,表示愈低位置。圖9B、圖10B、圖11B係顯示圓盤狀玻璃G3、G4的三次元斜視形狀。 The disk-shaped glass G3 and G4 are plate-like in visual observation, but when viewed in an enlarged view, they have minute warpages or uneven shapes of an extent that is acceptable at the time of use. For example, the disk-shaped glasses G3 and G4 are formed in the shapes of bowls, saddles, and valleys as shown in FIGS. 9A and 9B to FIGS. 11A and 11B . FIGS. 9A and 9B to FIGS. 11A and 11B are diagrams showing an example of the shape of the disc-shaped glass of the present embodiment measured by SBW-331ML/d manufactured by KOBELCO Scientific Co., Ltd. in the thickness direction, respectively. FIGS. 9A , 10A and 11A show the high and low shapes of the disk-shaped glasses G3 and G4 in a plan view in shades, and the darker the darker, the lower the position. 9B, 10B, and 11B show the three-dimensional oblique shapes of the disk-shaped glasses G3 and G4.

圖9A、9B係顯示形成碗形狀的圓盤狀玻璃G3、G4。碗形狀係指中央部比外周部較為凹陷的形狀。尤其,若將圓盤狀玻璃G3、G4的半徑設為r(mm)時,較佳為在離中心為0.8r以內的區域形成碗形狀。若圓盤狀玻璃G3、G4為碗形狀,且被使用在半導體支持基板用途時,較佳為以主表面之中凹陷側支持半導體基板。若如上所示,可安定地支持半導體基板。此時,為了明示應將圓盤狀玻璃G3、G4的主表面的哪一面設為支持面,較佳為 在凹陷之側的主表面形成刻印或貼紙等識別標記。 9A and 9B show disk-shaped glasses G3 and G4 formed into a bowl shape. The bowl shape refers to a shape in which the central portion is more concave than the outer peripheral portion. In particular, when the radius of the disk-shaped glasses G3 and G4 is r (mm), it is preferable to form a bowl shape in a region within 0.8r from the center. When the disc-shaped glasses G3 and G4 have a bowl shape and are used for a semiconductor support substrate, it is preferable to support the semiconductor substrate on the concave side among the main surfaces. As described above, the semiconductor substrate can be stably supported. In this case, in order to clarify which side of the main surfaces of the disk-shaped glasses G3 and G4 should be used as the support surface, it is preferable to form identification marks such as engravings or stickers on the main surfaces on the side of the depressions.

圖10A、10B係顯示形成鞍形狀的圓盤狀玻璃G3、G4。鞍形狀係指局部以沿著板厚方向的第一方向翹曲,而且局部以與第一方向為相反的第二方向呈翹彎的形狀。在圖10A、10B中,圓盤狀玻璃G3、G4係顯示將以在中心大致直行的二軸各個為中心朝向不同的方向翹曲的形狀。若圓盤狀玻璃G3、G4為鞍形狀,被認為是已取得內部應力平衡的狀態,可抑制使用時的變形等。 FIGS. 10A and 10B show disk-shaped glasses G3 and G4 formed in a saddle shape. The saddle shape refers to a shape that is partially warped in a first direction along the plate thickness direction, and partially warped in a second direction opposite to the first direction. In FIGS. 10A and 10B , the disk-shaped glasses G3 and G4 show shapes that are warped in different directions around each of two axes that run substantially straight at the center. When the disk-shaped glasses G3 and G4 are saddle-shaped, it is considered that the internal stress balance has been achieved, and deformation and the like during use can be suppressed.

圖11A、11B係顯示形成谷形狀的圓盤狀玻璃G3、G4。谷形狀係指僅以板厚方向的一方向翹彎的形狀。 FIGS. 11A and 11B show disk-shaped glasses G3 and G4 formed in a valley shape. The valley shape refers to a shape that is warped only in one direction of the plate thickness direction.

其中,圓盤狀玻璃G3、G4的用途並非侷限於半導體支持用途,可轉用為任意用途。 Among them, the use of the disk-shaped glass G3 and G4 is not limited to the semiconductor support use, and can be diverted to any use.

Claims (13)

一種圓盤狀玻璃之製造方法,其特徵為:具備有:熱處理工程,其係將玻璃板,在由室溫加熱至在徐冷點-50℃~徐冷點+80℃的範圍內被預先設定的波峰溫度之後進行冷卻;圓形切斷工程,其係由前述玻璃板切出圓盤狀玻璃;及切口形成工程,其係在前述圓盤狀玻璃板的端部形成切口部。 A method for manufacturing disc-shaped glass, which is characterized by comprising: a heat treatment process in which a glass plate is heated from room temperature to a temperature range of -50°C to cool point +80°C in advance. Cooling is performed after the set peak temperature; a circular cutting process is to cut a disk-shaped glass from the glass plate; 一種圓盤狀玻璃之製造方法,其係被使用在支持加工基板的圓盤狀玻璃之製造方法,其特徵為:具備有:熱處理工程,其係將楊氏模數為65GPa以上的玻璃板,在由室溫加熱至在徐冷點-50℃~徐冷點+80℃的範圍內被預先設定的波峰溫度之後進行冷卻;圓形切斷工程,其係由前述玻璃板切出圓盤狀玻璃;及切口形成工程,其係在前述圓盤狀玻璃板的端部形成切口部。 A method for producing a disc-shaped glass, which is used for a method for producing a disc-shaped glass supporting a processing substrate, characterized by comprising: a heat treatment process in which a glass plate having a Young's modulus of 65 GPa or more is prepared; After heating from room temperature to a pre-set wave peak temperature in the range of the cold point -50°C to the cold point +80°C, it is cooled; the circular cutting process is to cut a disk shape from the aforementioned glass plate glass; and a notch forming process for forming a notch at the end of the disk-shaped glass plate. 如申請專利範圍第1項或第2項之圓盤狀玻璃之製造 方法,其中,前述熱處理工程係包含:升溫步驟,其係由室溫以+1~+16℃/min的速度升溫至前述波峰溫度;保持步驟,其係在前述升溫步驟後,以前述波峰溫度-10℃~前述波峰溫度的範圍內的保持溫度保持0~120分鐘;及降溫步驟,其係在前述保持步驟之後,在由前述保持溫度至前述玻璃板之應變點-50℃的溫度區域中,以-6.0~-0.3℃/min的速度降溫。 Manufacture of disc-shaped glass as claimed in item 1 or item 2 of the scope of the patent application The method, wherein, the aforementioned heat treatment process comprises: a heating step, which is heated from room temperature to the aforementioned peak temperature at a speed of +1~+16°C/min; a holding step, which is after the aforementioned heating step, at the aforementioned peak temperature A holding temperature in the range of -10°C to the aforementioned peak temperature is maintained for 0 to 120 minutes; and a cooling step, which is performed after the aforementioned holding step, in a temperature range from the aforementioned holding temperature to the strain point of the aforementioned glass plate -50°C , cool down at a rate of -6.0~-0.3℃/min. 如申請專利範圍第3項之圓盤狀玻璃之製造方法,其中,前述降溫步驟係包含:第一降溫步驟,其係在由前述保持溫度至前述玻璃板之應變點-50℃的溫度區域中,以-3.0~-0.3℃/min的速度降溫;及第二降溫步驟,其係在應變點-50℃以下的溫度區域中,以-5.8~-1.1℃/min的速度降溫。 The method for producing a disc-shaped glass of claim 3, wherein the cooling step comprises: a first cooling step, which is in a temperature range from the holding temperature to the strain point of the glass plate -50°C , cooling at a rate of -3.0~-0.3°C/min; and a second cooling step, which is in the temperature region below the strain point -50°C, cooling at a rate of -5.8~-1.1°C/min. 如申請專利範圍第1項或第2項之圓盤狀玻璃之製造方法,其中,在前述熱處理工程中,在對前述玻璃板的板厚方向施加荷重的狀態下進行熱處理。 The method for producing a disk-shaped glass according to claim 1 or claim 2, wherein, in the heat treatment process, the heat treatment is performed in a state where a load is applied to the glass plate in the thickness direction. 如申請專利範圍第5項之圓盤狀玻璃之製造方法,其中,使複數前述玻璃板在相互間介在脫模材來進行積層, 在將按壓構件載置於最上段的狀態下,進行前述熱處理工程的前述熱處理。 The method for producing a disk-shaped glass according to claim 5, wherein a plurality of the glass plates are laminated with a release material interposed therebetween, The aforementioned heat treatment of the aforementioned heat treatment process is performed in a state where the pressing member is placed on the uppermost stage. 如申請專利範圍第6項之圓盤狀玻璃之製造方法,其中,在複數前述玻璃板的最下段另外配置支持構件,使前述按壓構件及前述支持構件之各個之與前述玻璃板的接觸面,大於前述玻璃板的主表面。 The method for producing a disk-shaped glass according to claim 6, wherein a supporting member is additionally arranged at the lowermost stage of the plurality of the glass plates, so that the contact surface of each of the pressing member and the supporting member with the glass plate, larger than the major surface of the aforementioned glass sheet. 如申請專利範圍第1項或第2項之圓盤狀玻璃之製造方法,其中,另外具備有研磨工程,其係在前述熱處理工程以後且在前述圓形切斷工程之前或後之任一者,將前述玻璃板的兩主表面進行研磨,在前述研磨中,相對於其中一方主表面的研磨量之另一方主表面的研磨量為0.8~1.2倍的範圍內。 The method for producing disk-shaped glass according to claim 1 or claim 2, further comprising a grinding step, which is performed after the aforementioned heat treatment step and before or after the aforementioned circular cutting step. , the two main surfaces of the glass plate are ground, and in the above-mentioned grinding, the grinding amount of the other main surface is within the range of 0.8 to 1.2 times the grinding amount of the one main surface. 如申請專利範圍第1項之圓盤狀玻璃之製造方法,其中,在前述熱處理工程後進行前述圓形切斷工程,在前述圓形切斷工程後具備前述切口形成工程。 The method for producing a disk-shaped glass according to claim 1, wherein the circular cutting process is performed after the heat treatment process, and the notch forming process is provided after the circular cutting process. 一種圓盤狀玻璃,其係翹曲為200μm以下,而且主表面的中心的應力與離端面為100mm的位置的主表面的應力的差為0~10MPa,且在端部具有切口部。 Disk-shaped glass having a warpage of 200 μm or less, a difference between the stress at the center of the main surface and the stress of the main surface at a position 100 mm from an end surface of 0 to 10 MPa, and having a notch at the end. 如申請專利範圍第10項之圓盤狀玻璃,其中,若將半徑設為r(mm),在離中心為0.8r以內的區域,形成碗形狀。 The disk-shaped glass according to claim 10, wherein, if the radius is set to r (mm), a bowl shape is formed in a region within 0.8r from the center. 如申請專利範圍第11項之圓盤狀玻璃,其中,在使用時成為上面的主表面具有識別標記,具有在形成有前述識別標記的主表面側形成凹陷的前述碗形狀。 The disc-shaped glass according to claim 11, wherein the main surface which becomes the upper surface in use has an identification mark, and has the bowl shape in which the depression is formed on the main surface side where the identification mark is formed. 如申請專利範圍第10項之圓盤狀玻璃,其中,形成鞍形狀。 The disk-shaped glass according to claim 10, wherein a saddle shape is formed.
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