TW201833049A - Glass support substrate and laminate using same - Google Patents

Abstract

The glass support substrate according to the present invention is for supporting a substrate to be processed, and is characterized by containing, as a glass composition, in mass%, 45-70% of SiO2, more than 10.5 but not more than 35% of Al2O3, 0-20% of B2O3, 5-25% of Na2O, 0-10% of K2O, 1-10% of MgO, and 0-5% of ZnO, and having a crack resistance of 500 gf or more.

Description

Supporting glass substrate and laminated body using the same

The present invention relates to a supporting glass substrate for supporting a processed substrate and a laminated body using the same, and more particularly to a support for processing a substrate in a manufacturing step of a semiconductor package (semiconductor device) A glass substrate and a laminate using the same.

Portable electronic devices such as mobile phones, notebook personal computers, and personal digital assistants (PDAs) require miniaturization and weight reduction. Along with this, the mounting space of semiconductor chips used in these electronic devices is also severely restricted, and high-density mounting of semiconductor wafers has become a problem. Therefore, in recent years, high-density mounting of a semiconductor package has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor wafers and wiring the semiconductor wafers.

In addition, a conventional Wafer Level Package (WLP) is produced by forming a bump in a state of a wafer and then dicing it by dicing. However, in the conventional WLP, it is difficult to increase the number of pins, and in addition, since the back surface of the semiconductor wafer is exposed, the semiconductor wafer is likely to be defective.

Therefore, as a new WLP, a fan out type WLP is proposed. The fan-out type WLP can increase the number of pins, and by protecting the ends of the semiconductor wafer, it is possible to prevent the semiconductor wafer from being damaged or the like.

The manufacturing process of the fan-out type WLP includes, after arranging a plurality of semiconductor wafers on a supporting glass substrate, forming a processed substrate by a resin sealing material, and then performing wiring on one surface of the processed substrate; A step of forming a solder bump or the like.

[Problems to be Solved by the Invention] In the manufacturing process of the fan-out type WLP, the laminated body including the processed substrate and the supporting glass substrate is conveyed in the horizontal direction while the supporting glass substrate side is in contact with the conveying conveyor. In addition, the conveyance is performed in a state where the end edge portion of the supporting glass substrate is held by the robot arm or the like.

However, the supporting glass substrate is easily subjected to mechanical impact from the conveying conveyor or the robot arm during conveyance of the laminated body. Further, when the supporting glass substrate is mechanically impacted, cracks may occur in the supporting glass substrate, and the glass substrate may be damaged by the crack as a starting point.

The present invention has been made in view of the above circumstances, and a technical object is to create a supporting glass substrate which is less likely to cause cracks during the conveyance of the laminated body in the manufacturing process of the fan-out type WLP. [Means for solving the problem]

The inventors of the present invention conducted various experiments and found that basic aluminum silicate glass was selected as the supporting glass substrate, and the glass composition range of the basic aluminum silicate glass was strictly restricted, and the crack resistance was improved, thereby solving the problem. The present invention has been made in view of the technical problems. That is, the supporting glass substrate of the present invention is for supporting a processed substrate, and the supporting glass substrate is characterized in that, as a glass composition, 45% to 70% of SiO ₂ and more than 10.5% to 35% of Al are contained by mass%. ₂ O ₃ , 0% to 20% B ₂ O ₃ , 5% to 25% Na ₂ O, 0% to 10% K ₂ O, 1% to 10% MgO, and 0% to 5% ZnO, and the crack resistance is 500 gf or more. Here, the "crack resistance" means a load having a crack generation rate of 50%. The "crack generation rate" refers to a value measured as follows. First, in a constant temperature and humidity chamber maintained at a humidity of 30% and a temperature of 25 ° C, a Vickers indenter set to a predetermined load was driven into the glass surface (optical polishing surface) for 15 seconds, and after 15 seconds, The number of cracks generated at the four corners of the indentation was counted (set to an indentation of up to 4). In this way, the indenter was driven 20 times, and after the total number of cracks was found, it was obtained by the equation (the total number of generated cracks / 80) × 100. As the measuring device for the crack resistance, for example, a multi Vickers hardness meter FLC-50VX manufactured by Future Tech Co., Ltd. can be used.

Secondly, the supporting glass substrate of the present invention preferably has a glass composition containing 50% to 67% of SiO ₂ , 19.7% to 33% of Al ₂ O ₃ , and 0% to 15% of B ₂ O by mass%. ₃ , 5% to 20% of Na ₂ O, 0% to 3% of K ₂ O, 1% to 5.5% of MgO, and 0% to 3% of ZnO, and the crack resistance is 700 gf or more.

Third, the supporting glass substrate of the present invention preferably has an average linear thermal expansion coefficient in a temperature range of from 20 ° C to 220 ° C of 40 × 10 ^-7 / ° C or more and 120 × 10 ^-7 / ° C or less. Accordingly, when the ratio of the semiconductor wafer to the sealing material is changed in the processed substrate, the linear thermal expansion coefficient of the processed substrate and the supporting glass substrate is easily matched. Further, if the linear thermal expansion coefficients of the two are matched, it is easy to suppress dimensional change (especially warpage deformation) of the processed substrate during the processing. As a result, high-density wiring can be performed on one surface of the processed substrate, and solder bumps can be accurately formed. Here, the "average linear thermal expansion coefficient in a temperature range of 20 ° C to 220 ° C" can be measured by a dilatometer.

Fourth, the supporting glass substrate of the present invention preferably has an average linear thermal expansion coefficient in a temperature range of from 20 ° C to 260 ° C of 40 × 10 ^-7 / ° C or more and 120 × 10 ^-7 / ° C or less. Here, the "average linear thermal expansion coefficient in a temperature range of 20 ° C to 260 ° C" can be measured by a dilatometer.

Fifth, the supporting glass substrate of the present invention preferably has an average linear thermal expansion coefficient in a temperature range of from 30 ° C to 380 ° C of 42 × 10 ^-7 / ° C or more and 125 × 10 ^-7 / ° C or less. Here, the "average linear thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C" can be measured by a dilatometer.

Sixth, the supporting glass substrate of the present invention preferably has a wafer shape or a substantially circular plate shape with a diameter of 100 mm to 500 mm, a plate thickness of less than 2.0 mm, and a total thickness variation (TTV) of 5 μm or less. And the amount of warpage is 60 μm or less. Here, the "warpage amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least squared focal plane in the entire supporting glass substrate, and the absolute value of the lowest point and the least squared focal plane, for example, The measurement was carried out by a Bow/Warp measuring device SBW-331M/Ld manufactured by KOBELCO Research Co., Ltd.

Seventh, the laminated body of the present invention preferably includes at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is the supporting glass substrate.

Eighth, the laminated body of the present invention preferably has a processed substrate including at least a semiconductor wafer formed by a sealing material.

Ninth, the manufacturing method of the semiconductor package of the present invention preferably includes: a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate; and a step of processing the processed substrate, and supporting The glass substrate is the supporting glass substrate.

Tenth, in the method of manufacturing the semiconductor package of the present invention, it is preferable that the processing includes the step of wiring on one surface of the processed substrate.

Eleventh, in the method of fabricating the semiconductor package of the present invention, the processing includes the step of forming solder bumps on a surface of the processed substrate.

Twelfth, the semiconductor package of the present invention is preferably produced by the method of manufacturing the semiconductor package.

Thirteenth, the electronic device of the present invention preferably includes a semiconductor package, and the semiconductor package is the semiconductor package.

The supporting glass substrate of the present invention is characterized in that it contains 45% to 70% of SiO ₂ , more than 10.5% to 35% of Al ₂ O ₃ , and 0% to 20% of B ₂ O ₃ as a glass composition. 5% to 25% of Na ₂ O, 0% to 10% of K ₂ O, 1% to 10% of MgO, and 0% to 5% of ZnO. The reason for limiting the content of each component as described above is shown below. In addition, in the description of the content of each component, the % expression means the mass %.

SiO ₂ is a main component of the skeleton forming the glass. When the content of SiO ₂ is too small, the Young's modulus and acid resistance are liable to lower. However, when the content of SiO ₂ is too large, the high-temperature viscosity is increased, and the meltability and moldability are liable to be lowered. In addition, devitrified crystals such as cristobalite are easily precipitated, and the liquidus temperature is likely to rise. Therefore, the lower limit range of SiO ₂ is 45% or more, preferably 47% or more, particularly 49% or more, and the upper limit is 70% or less, preferably 68% or less, 66% or less, and especially 65% or less. When the meltability is prioritized, it is 64% or less, 63% or less, and particularly 62% or less.

Al ₂ O ₃ is a component that increases the crack resistance. It is a component that inhibits phase separation and devitrification. However, when the content of Al ₂ O ₃ is too large, the high-temperature viscosity is increased, and the meltability and moldability are liable to lower. Therefore, the lower limit range of Al ₂ O ₃ is more than 10.5%, preferably 11% or more, 13% or more, 15% or more, 17% or more, especially 19.7% or more, and the upper limit is 35% or less, preferably 30%. Hereinafter, when the meltability and moldability are prioritized, it is 25% or less, particularly 20% or less.

B ₂ O ₃ is a component which improves meltability and devitrification resistance, and is a component which improves crack resistance. However, when the content of B ₂ O ₃ is too large, the Young's modulus and acid resistance are liable to lower. Therefore, the lower limit range of B ₂ O ₃ is 0% or more, preferably 1% or more, 2% or more, 3% or more, especially 4% or more, and the upper limit is 20% or less, preferably 15% or less, 13 % or less, 11% or less, especially 9% or less.

Na ₂ O is an important component for adjusting the linear thermal expansion coefficient, and is a component which contributes to the initial melting of the glass raw material. However, if the content of Na ₂ O is too large, the coefficient of linear thermal expansion is unreasonably increased. Therefore, the lower limit of Na ₂ O is 5% or more, preferably 6% or more, 7% or more, 8% or more, and especially 9% or more, and the upper limit is 25% or less, preferably 23% or less, 21%. The following, especially 18% or less.

K ₂ O is a component for adjusting the linear thermal expansion coefficient and is a component which contributes to the initial melting of the glass raw material. However, if the content of K ₂ O is too large, the coefficient of linear thermal expansion is unreasonably increased. Therefore, the content of K ₂ O is from 0% to 10%, preferably from 0% to 6%, from 0% to 5%, from 0.1% to 1.9%, especially from 0.2% to less than 1%.

MgO is a component that increases the crack resistance. Further, it is a component which lowers the high-temperature viscosity and improves the meltability, and is a component which significantly increases the Young's modulus in the alkaline earth metal oxide. However, when the content of MgO is increased, the devitrification resistance is liable to lower. Therefore, the content of MgO is from 1% to 10%, preferably from 1% to 6%, from 1% to 5.5%, from 2% to 5%, especially from 3% to less than 4%.

The mass ratio (Al ₂ O ₃ + B ₂ O ₃ + MgO) / (Na ₂ O + K ₂ O) is preferably 1.3 or more, 1.5 or more, 2.0 or more, 2.5 or more, and particularly preferably 3.0 or more. When the mass ratio (Al ₂ O ₃ + B ₂ O ₃ + MgO) / (Na ₂ O + K ₂ O) is too small, the crack resistance is lowered or is easily damaged, and the supporting glass substrate is liable to be broken by cracks.

ZnO is a component that lowers high-temperature viscosity and remarkably improves meltability and formability, and is a component that improves weather resistance. However, if the content of ZnO is too large, the glass is easily devitrified. Therefore, the content of ZnO is from 0% to 5%, preferably from 0% to 4%, from 0.1% to 2%, especially from 0.3% to 1.5%.

In addition to the above components, other components may be introduced as optional components. In addition, the content of the other components other than the component is preferably 25% or less, 20% or less, 15% or less, 10% or less, and especially 5 in terms of the total effect of the present invention. %the following.

Li ₂ O is a component which lowers high-temperature viscosity and remarkably improves meltability and formability. It is a component that increases the Young's modulus. However, if the content of Li ₂ O is too large, the glass is easily devitrified. Therefore, the content of Li ₂ O is preferably 0% to 7%, 0% to 3%, 0% to 1%, particularly 0.01% to 0.1%.

CaO is a component which lowers high-temperature viscosity and remarkably improves meltability and formability. Further, in the alkaline earth metal oxide, since the raw material to be introduced is relatively inexpensive, the raw material cost is reduced. However, if the content of CaO is too large, the glass is easily devitrified. Therefore, the content of CaO is preferably 0% to 10%, 1% to 8%, 3% to 8%, 2% to 6%, particularly 2% to 5%.

SrO is a component that suppresses phase separation and is a component that improves resistance to devitrification. However, if the content of SrO is too large, the glass is easily devitrified. Therefore, the content of SrO is preferably 0% to 20%, 0% to 15%, 0% to 9%, 0% to 5%, 0% to 4%, 0% to 3%, 0% to 2%, Especially 0% to less than 1%. Further, in the case where the improvement of the devitrification resistance is prioritized, the preferred lower limit range of SrO is 0.1% or more, 1% or more, 2% or more, 4% or more, and particularly 7% or more.

BaO is a component that improves resistance to devitrification. However, if the content of BaO is too large, the glass is easily devitrified. Therefore, the content of BaO is preferably 0% to 20%, 0% to 14%, 0% to 9%, 0% to 5%, 0% to 4%, 0% to 3%, 0% to 2%, Especially 0% to less than 1%. Further, in the case where the improvement in devitrification resistance is prioritized, a preferred lower limit range of BaO is 0.1% or more, 1% or more, and particularly 3% or more.

Fe ₂ O ₃ is a component which can be introduced as an impurity component or a clarifier component. However, if the content of Fe ₂ O ₃ is too large, there is a possibility that the ultraviolet transmittance is lowered. In other words, when the content of Fe ₂ O ₃ is too large, it may be difficult to appropriately bond and debond the processed substrate and the supporting glass substrate via the resin layer or the release layer. Therefore, the content of Fe ₂ O ₃ is preferably 0.05% or less, 0.03% or less, 0.001% to 0.02%, particularly 0.005% to 0.01%. Further, the "Fe ₂ O ₃ " mentioned in the present invention contains divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is converted into Fe ₂ O ₃ to be treated. The other oxides were treated in the same manner based on the oxides described.

As a clarifying agent, As ₂ O ₃ functions effectively, and from the viewpoint of the environment, it is preferred to reduce these components as much as possible. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, or particularly 0.1% or less, and is preferably substantially not contained. Here, "substantially does not contain As ₂ O ₃ " means that the content of As ₂ O ₃ in the glass composition is less than 0.05%.

Sb ₂ O ₃ is a component having a good clarifying effect in a low temperature region. The content of Sb ₂ O ₃ is preferably from 0% to 1%, from 0.001% to 1%, from 0.01% to 0.9%, especially from 0.05% to 0.7%. When the content of Sb ₂ O ₃ is too large, the glass is easily colored.

SnO ₂ is a component which has a good clarifying action in a high temperature region, and is a component which lowers the viscosity at a high temperature. The content of SnO ₂ is preferably 0% to 1%, 0.001% to 1%, 0.01% to 0.9%, particularly 0.05% to 0.7%. When the content of SnO ₂ is too large, devitrified crystals of SnO ₂ are easily precipitated. Further, if the content of SnO ₂ is too small, it is difficult to enjoy the above effect.

SO ₃ is a component having a clarifying effect. The content of SO ₃ is preferably from 0% to 1%, from 0.001% to 1%, from 0.01% to 0.5%, especially from 0.05% to 0.3%. When the content of SO ₃ is too large, SO ₂ is easily reboiled.

Further, as long as the glass characteristics are not impaired, F, C, or a metal powder such as Al or Si may be introduced to about 1% as a clarifying agent. Further, CeO ₂ or the like may be introduced at about 1%, but it is necessary to pay attention to the decrease in the ultraviolet transmittance.

Cl is a component that promotes melting of the glass. When Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification effect can be promoted. As a result, it is easy to achieve a reduction in the melting cost and a long life of the glass furnace. However, if the content of Cl is too large, there is a possibility that the metal parts around the glass manufacturing furnace are corroded. Therefore, the content of Cl is preferably 3% or less, 1% or less, 0.5% or less, and especially 0.1% or less.

P ₂ O ₅ is a component which can suppress precipitation of devitrified crystals. However, if P ₂ O ₅ is introduced in a large amount, the glass is easily separated into phases. Therefore, the content of P ₂ O ₅ is preferably 0% to 15%, 0% to 2.5%, 0% to 1.5%, 0% to 0.5%, particularly preferably 0.1% to 0.3%.

TiO ₂ is a component that lowers high-temperature viscosity and improves meltability, and is a component that suppresses solarization. However, when TiO ₂ is introduced in a large amount, the glass is colored, and the transmittance is liable to lower. Therefore, the content of TiO ₂ is preferably 0% to 5%, 0% to 3%, 0% to 1%, particularly 0% to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, when ZrO ₂ is introduced in a large amount, the glass is easily devitrified, and the introduced raw material is insoluble, so that unmelted crystalline foreign matter is mixed into the product substrate. Therefore, the content of ZrO ₂ is preferably 0% to 10%, 0% to 7%, 0% to 5%, 0.001% to 3%, 0.01% to 1%, particularly preferably 0.1% to 0.5%.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have an effect of increasing the strain point, Young's modulus, and the like. However, if the content of these components is 5%, especially more than 1%, there is a problem that the raw material cost and the product cost are high.

The supporting glass substrate of the present invention preferably has the following characteristics.

The crack resistance is 500 gf or more, preferably 600 gf or more, 700 gf or more, 800 gf or more, 900 gf or more, and especially 1000 gf or more. When the crack resistance is low, in the manufacturing process of the fan-out type WLP, cracks are caused in the supporting glass substrate due to mechanical impact from the conveying conveyor or the machine arm, and the supporting glass substrate is likely to be broken by the crack as a starting point.

The average linear thermal expansion coefficient in the temperature range of 20 ° C to 220 ° C is preferably 40 × 10 ^-7 / ° C or more and 120 × 10 ^-7 / ° C or less, more preferably more than 50 × 10 ^-7 / ° C or more and 110 × 10 ^-7 / ° C or less, further preferably 60 × 10 ^-7 / ° C or more and 100 × 10 ^-7 / ° C or less, particularly preferably 70 × 10 ^-7 / ° C or more and 95 × 10 ^-7 / ° C or less. When the average linear thermal expansion coefficient in the temperature range of 20 ° C to 220 ° C is outside the above range, the linear thermal expansion coefficient of the processed substrate and the supporting glass substrate is difficult to match. Further, if the linear thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during the processing.

The average linear thermal expansion coefficient in the temperature range of 20 ° C to 260 ° C is preferably 40 × 10 ^-7 / ° C or more and 120 × 10 ^-7 / ° C or less, more preferably more than 50 × 10 ^-7 / ° C and 110 × 10 ^-7 / ° C or less, further preferably 60 × 10 ^-7 / ° C or more and 100 × 10 ^-7 / ° C or less, particularly preferably 70 × 10 ^-7 / ° C or more and 95 × 10 ^-7 / ° C or less. When the average linear thermal expansion coefficient in the temperature range of 20 ° C to 260 ° C is outside the above range, the linear thermal expansion coefficient of the processed substrate and the supporting glass substrate is difficult to match. Further, if the linear thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during the processing.

The average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C is preferably 42 × 10 ^-7 / ° C or more and 125 × 10 ^-7 / ° C or less, more preferably more than 50 × 10 ^-7 / ° C and 110 × 10 ^-7 / ° C or less, further preferably 60 × 10 ^-7 / ° C or more and 100 × 10 ^-7 / ° C or less, particularly preferably 70 × 10 ^-7 / ° C or more and 95 × 10 ^-7 / ° C or less. When the average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C is outside the above range, the linear thermal expansion coefficient of the processed substrate and the supporting glass substrate is difficult to match. Further, if the linear thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during the processing.

The temperature at 10 ^2.5 dPa·s is preferably 1680 ° C or lower, 1620 ° C or lower, 1580 ° C or lower, 1550 ° C or lower, 1520 ° C or lower, or particularly 1500 ° C or lower. When the temperature at 10 ^2.5 dPa·s becomes high, the meltability is lowered, and the production cost of the glass substrate is high. Here, "the temperature at 10 ^2.5 dPa·s" can be measured by a platinum ball pulling method. Further, the temperature at 10 ^2.5 dPa·s corresponds to the melting temperature, and the lower the temperature, the higher the meltability.

The liquidus temperature is preferably less than 1300 ° C, 1200 ° C or less, 1100 ° C or less, 1050 ° C or less, 1000 ° C or less, and especially 950 ° C or less. The viscosity at the liquidus temperature is preferably 10,000 dPa·s or more, 30,000 dPa·s or more, 60,000 dPa·s or more, 100,000 dPa·s or more, 200,000 dPa·s or more, 300,000 dPa·s or more, and 500,000 dPa·s or more. , 800,000 dPa·s or more, especially 1,000,000 dPa·s or more. As described above, since the devitrified crystal is hardly precipitated during molding, it is easy to form the glass substrate by a down-draw method, in particular, an overflow down-draw method. Here, the "liquidus temperature" can be filled in a platinum boat by charging a glass powder remaining at 50 mesh (300 μm) through a standard sieve of 30 mesh (500 μm), and maintained in a temperature gradient furnace for 24 hours. The temperature at which the crystal was precipitated was calculated. The "viscosity at the liquidus temperature" can be measured by a platinum ball pulling method. Further, the viscosity at the liquidus temperature is an index of formability, and the higher the viscosity at the liquidus temperature, the more the formability is improved.

In the supporting glass substrate of the present invention, the Young's modulus is preferably 65 GPa or more, 68 GPa or more, 70 GPa or more, 72 GPa or more, 73 GPa or more, and particularly 74 GPa or more. When the Young's modulus is too low, it is difficult to maintain the rigidity of the laminated body, and deformation, warpage, breakage, and the like of the processed substrate are likely to occur. Here, "Young's modulus" means a value measured by a bending resonance method.

The support glass substrate of the present invention preferably has the following shape.

The supporting glass substrate of the present invention is preferably substantially disk-shaped or wafer-shaped, and its diameter is preferably 100 mm or more and 500 mm or less, particularly 150 mm or more and 450 mm or less. Thus, it is easy to apply to the manufacturing process of the fan-out type WLP. It is also possible to process into a shape other than this, for example, a shape such as a rectangle.

The roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, or particularly 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing steps of the fan-out type WLP. In addition, the "roundness" is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer other than the notch portion.

The plate thickness is preferably less than 2.0 mm, less than 1.5 mm, less than 1.2 mm, less than 1.1 mm, less than 1.0 mm, especially less than 0.9 mm. The thinner the plate thickness, the lighter the quality of the laminate, and the operability is improved. On the other hand, when the thickness is too small, the strength of the supporting glass substrate itself is lowered, and it becomes difficult to exhibit the function as a supporting substrate. Therefore, the sheet thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly more than 0.7 mm.

The overall thickness deviation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly preferably 0.1 μm to less than 1 μm. Further, the arithmetic mean roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, or particularly 0.5 nm or less. The higher the surface precision, the easier it is to improve the processing accuracy. Since wiring accuracy can be improved in particular, high-density wiring can be performed. Further, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminated body are less likely to be damaged. Further, the number of reuse of the supporting glass substrate can be increased. Further, the "arithmetic average roughness Ra" can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).

The support glass substrate of the present invention is preferably formed by grinding a surface after being formed by an overflow down-draw method. Thus, it is easy to limit the overall thickness deviation (TTV) to less than 2.0 μm, 1.5 μm or less, 1.0 μm or less, and particularly preferably 0.1 μm to less than 1.0 μm.

The amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 μm to 45 μm, or particularly 5 μm to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of the processing. Since wiring accuracy can be improved in particular, high-density wiring can be performed.

The supporting glass substrate of the present invention preferably has a notch portion (an aligning portion having a notch shape), and the depth of the notch portion is preferably a substantially circular shape or a substantially V-groove shape in plan view. Thereby, the positioning member such as the positioning pin is brought into contact with the notch portion of the supporting glass substrate, and the supporting glass substrate is easily fixed in position. As a result, alignment of the supporting glass substrate with the processed substrate becomes easy. In particular, if a notch portion is formed on the processed substrate and the positioning member is brought into contact with each other, alignment of the entire laminated body becomes easy. Further, since the notch portion is in contact with the positioning member, cracks are likely to occur. However, since the supporting glass substrate of the present invention has high crack resistance, it is particularly effective when it has a notch portion.

When the positioning member is brought into contact with the notch portion of the supporting glass substrate, the stress tends to concentrate on the notch portion, and the supporting glass substrate is likely to be broken by using the notch portion as a starting point. In particular, when the supporting glass substrate is bent by an external force, the tendency becomes remarkable. Therefore, in the support glass substrate of the present invention, it is preferable that all or a part of the edge region where the surface of the notch portion intersects the end surface is chamfered. Thereby, damage from the notch portion as a starting point can be effectively avoided.

All or a part of the edge region of the notch portion of the supporting glass substrate of the present invention which intersects the end surface is chamfered, and it is preferable that 50% or more of the edge region where the surface of the notch portion intersects the end surface is chamfered. More preferably, 90% or more of the edge region where the surface of the notch portion intersects the end surface is chamfered, and it is preferable that the edge region where the surface of the notch portion intersects the end surface is chamfered. The larger the area of the notch that is chamfered, the more the probability of breakage starting from the notch can be reduced.

The chamfer width in the surface direction of the notch portion is preferably 50 μm to 900 μm, 200 μm to 800 μm, 300 μm to 700 μm, 400 μm to 650 μm, or particularly 500 μm to 600 μm. When the chamfer width in the surface direction of the notch portion is too small, the support glass substrate is likely to be damaged by using the notch portion as a starting point. On the other hand, if the chamfer width in the surface direction of the notch portion is too large, the chamfering efficiency is lowered, and the manufacturing cost of supporting the glass substrate is likely to increase.

The chamfer width in the thickness direction of the notch portion is preferably 5% to 80%, 20% to 75%, 30% to 70%, 35% to 65%, particularly 40% to 60% of the sheet thickness. When the chamfer width in the thickness direction of the notch portion is too small, the support glass substrate is likely to be broken by using the notch portion as a starting point. On the other hand, when the chamfer width in the thickness direction of the notch portion is too large, the external force tends to concentrate on the end surface of the notch portion, and the end surface of the notch portion serves as a starting point, and the supporting glass substrate is likely to be damaged.

The support glass substrate of the present invention preferably has an information recognition portion (marker) formed on the surface (marking) with a two-dimensional code. In this way, it is possible to manage and recognize the production information and the like for supporting the glass substrate (for example, the size of the glass substrate, the linear thermal expansion coefficient, the batch, the overall thickness deviation, the manufacturer name, and the name of the vendor). Further, the information discriminating unit is usually formed in a peripheral region of the supporting glass substrate, and is recognized by a human eye or the like in the form of a character, a symbol, or the like. Alternatively, the information discriminating portion that supports the glass substrate may be automatically discriminated by an optical element such as a charge coupled device (CCD) camera.

The information recognition unit can be formed by various methods. However, in the present invention, it is preferable to irradiate a pulse laser to ablate the glass in the irradiation area to form an information recognition unit, that is, to form an information recognition unit by laser ablation. In this way, excessive amount of heat can be accumulated in the glass in the irradiation region to cause ablation. As a result, not only the length of the crack in the thickness direction but also the length of the crack in the surface direction from the point extension can be reduced. Further, the supporting glass substrate of the present invention has an advantage that cracks are less likely to occur when the information recognition portion (particularly, a dot) is formed by laser ablation because of high crack resistance.

The information recognition unit preferably includes a plurality of points. The outer diameter of the dots is preferably from 0.05 mm to 0.20 mm, from 0.07 mm to 0.13 mm, especially from 0.09 mm to 0.11 mm. If the outer diameter of the dot is too small, the visibility of the information recognition portion is liable to decrease. On the other hand, if the outer diameter of the dot is too large, it is easy to ensure the strength of the supporting glass substrate.

The distance between the centers of the points adjacent to each other is preferably from 0.06 mm to 0.25 mm. If the distance between the centers of the points adjacent to each other is too small, it is easy to ensure the strength of the supporting glass substrate. On the other hand, if the distance between the centers of the points adjacent to each other is too large, the visibility of the information recognition unit is likely to be lowered.

The shape of the dots is preferably an annular groove. As described above, when the dot is an annular groove, the region surrounded by the annular groove (the region closer to the inner side than the groove) is not removed by the laser, and thus can be prevented as much as possible. The intensity of the area in which the information recognition unit is provided is lowered. Further, in the case of the annular groove, as long as the outer diameter does not change, the visibility does not decrease as much as the width of the groove is reduced. Therefore, if the width dimension is reduced without changing the outer diameter dimension of the groove, the volume of the region closer to the inner side than the groove can be obtained in a large amount, thereby ensuring visibility and ensuring the required strength.

The depth of the groove forming the dots is preferably from 2 μm to 30 μm. If the depth dimension of the groove is too small, the visibility of the information recognition unit is liable to decrease. On the other hand, if the depth dimension of the groove is too large, it is easy to ensure the strength of the supporting glass substrate.

The supporting glass substrate of the present invention is preferably formed by a down-draw method, in particular, an overflow down-draw method. The overflow down-draw method is a method in which molten glass is allowed to overflow from both sides of the heat-resistant flow-like structure, and the overflowed molten glass is formed to extend downward while being joined at the lower end of the flow-like structure. A glass substrate is produced. In the overflow down-draw method, the surface which should be the surface of the glass substrate is not in contact with the flow-like refractory, but is formed in a state of a free surface. Therefore, the overall thickness deviation (TTV) can be reduced to less than 2.0 μm, especially less than 1.0 μm, by a small amount of grinding. As a result, the manufacturing cost of the glass substrate can be reduced.

The supporting glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on its surface. When the ion exchange treatment is performed, the manufacturing cost of the supporting glass substrate is increased. However, if the ion exchange treatment is not performed, the manufacturing cost of the supporting glass substrate can be lowered. Further, when the ion exchange treatment is performed, it is difficult to reduce the total thickness variation (TTV) of the supporting glass substrate. However, if the ion exchange treatment is not performed, the above-described problem is easily eliminated. Further, the supporting glass substrate of the present invention does not exclude a form in which a compressive stress layer is formed on the surface by performing ion exchange treatment. From the viewpoint of merely improving the mechanical strength, it is preferred to carry out an ion exchange treatment to form a compressive stress layer on the surface.

The laminated body of the present invention includes at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the laminated body is characterized in that the supporting glass substrate is the supporting glass substrate. The laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate. The layer is preferably a resin, and is preferably, for example, a thermosetting resin, a photocurable resin (especially an ultraviolet curable resin), or the like. Further, it is preferable to have heat resistance of heat treatment in a manufacturing step capable of withstanding a fan-out type WLP. Thereby, in the manufacturing process of the fan-out type WLP, it is difficult to melt the subsequent layer, and the precision of the processing can be improved. Further, since the processed substrate and the supporting glass substrate are easily fixed, an ultraviolet curable adhesive tape can also be used as the adhesive layer.

The laminate of the present invention is preferably further provided between the processed substrate and the supporting glass substrate, more specifically, a peeling layer between the processed substrate and the adhesive layer, or a peeling layer between the supporting glass substrate and the adhesive layer. After the predetermined processing of the processed substrate as described above, the processed substrate is easily peeled off from the supporting glass substrate. From the viewpoint of productivity, peeling of the processed substrate is preferably performed by irradiation of light such as laser light. As the laser light source, an infrared laser light source such as a Yttrium Aluminium Garnet (YAG) laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 nm to 1300 nm) can be used. Further, a resin which is decomposed by irradiation of an infrared laser can be used in the release layer. Further, a substance which absorbs infrared rays with high efficiency and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, or the like may be added to the resin.

The release layer includes a material that causes "in-layer peeling" or "interfacial peeling" by irradiation of light such as laser light. That is, the following materials are included: when a certain intensity of light is irradiated, the bonding force between atoms or molecules in an atom or a molecule disappears or decreases, and ablation or the like occurs to cause a peeled material. In addition, when the irradiation light is irradiated, the components contained in the release layer are released when the gas is released, and the separation layer absorbs light to form a gas and discharges the vapor to cause separation.

In the laminate of the present invention, the supporting glass substrate is preferably larger than the processed substrate. Therefore, when the center position of both of the processed substrate and the supporting glass substrate is slightly separated, the edge portion of the processed substrate is hard to exceed the supporting glass substrate.

A method of manufacturing a semiconductor package of the present invention includes the steps of: preparing a layered body including at least a processed substrate and a supporting glass substrate for supporting the processed substrate; and a step of processing the processed substrate; and supporting the glass substrate The supporting glass substrate.

The method of manufacturing a semiconductor package of the present invention preferably further includes the step of transporting the laminate. Thereby, the processing efficiency of the processing can be improved. In addition, the "step of transporting the laminated body" and the "step of processing the processed substrate" need not be performed separately, and may be performed simultaneously.

In the method of manufacturing a semiconductor package of the present invention, the processing is preferably a process of performing wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the method of manufacturing a semiconductor package of the present invention, the size of the processed substrate is not easily changed during the processes, and thus the steps can be appropriately performed.

In addition to the above, the processing may be any one of the following processes: mechanically polishing one surface of the processed substrate (usually a surface opposite to the supporting glass substrate), and processing a surface of the substrate (Normally, the surface on the opposite side to the supporting glass substrate) is subjected to dry etching treatment, and one surface of the processed substrate (usually a surface opposite to the supporting glass substrate) is subjected to wet etching. Further, in the method of manufacturing a semiconductor package of the present invention, warpage is less likely to occur on the processed substrate, and the rigidity of the laminated body can be maintained. As a result, the processing can be appropriately performed.

The invention will be further described with reference to the drawings.

Fig. 1 is a conceptual perspective view showing an example of a laminated body 1 of the present invention. In FIG. 1, the laminated body 1 includes a supporting glass substrate 10 and a processed substrate 11. The supporting glass substrate 10 is attached to the processed substrate 11 in order to prevent dimensional changes of the processed substrate 11. A peeling layer 12 and an adhesive layer 13 are disposed between the supporting glass substrate 10 and the processed substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and then the layer 13 is in contact with the processed substrate 11.

In other words, the laminated body 1 is laminated in the order of supporting the glass substrate 10, the peeling layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the supporting glass substrate 10 is determined according to the processed substrate 11. In Fig. 1, the shapes of the supporting glass substrate 10 and the processed substrate 11 are substantially disk-shaped. As the peeling layer 12, for example, a resin which is decomposed by irradiation with a laser can be used. Further, a substance which absorbs laser light with high efficiency and converts it into heat can be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, and the like. The peeling layer 12 is formed by plasma chemical vapor deposition (CVD), spin coating of a sol-gel method, or the like. Next, the layer 13 includes a resin, which is formed, for example, by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. In addition, an ultraviolet curable tape can also be used. Next, the layer 13 is peeled off from the processed substrate 11 by the peeling layer 12, and then dissolved and removed by a solvent or the like. The ultraviolet curable tape can be removed by peeling off the tape after being irradiated with ultraviolet rays.

2(a) to 2(g) are conceptual cross-sectional views showing a manufacturing procedure of the fan-out type WLP. FIG. 2(a) shows a state in which the adhesion layer 21 is formed on one surface of the support member 20. A peeling layer may also be formed between the support member 20 and the adhesive layer 21 as needed. Then, as shown in FIG. 2(b), a plurality of semiconductor wafers 22 are attached on the adhesive layer 21. At this time, the surface on the active side of the semiconductor wafer 22 is brought into contact with the adhesive layer 21. Then, as shown in FIG. 2(c), the semiconductor wafer 22 is molded by the resin sealing material 23. The sealing material 23 is a material which has a dimensional change after compression molding and a small dimensional change when the wiring is formed. Next, as shown in FIGS. 2(d) and 2(e), the processed substrate 24 on which the semiconductor wafer 22 is formed is separated from the support member 20, and then fixed to the support glass substrate 26 via the adhesive layer 25. At this time, the surface on the surface of the processed substrate 24 opposite to the surface buried on the side of the semiconductor wafer 22 is disposed on the side of the supporting glass substrate 26. The laminate 27 can be obtained in this way. Further, a peeling layer may be formed between the adhesive layer 25 and the supporting glass substrate 26 as needed. After the obtained laminated body 27 is conveyed, as shown in FIG. 2(f), after the wiring 28 is formed on the surface of the processed substrate 24 on the semiconductor wafer 22 side, a plurality of solder bumps 29 are formed. Finally, after the processed substrate 24 is separated from the supporting glass substrate 26, the processed substrate 24 is cut into each of the semiconductor wafers 22 and used for the subsequent packaging step (Fig. 2(g)).

3(a) and 3(b) are upper conceptual views showing an example of a supporting glass substrate of the present invention. As shown in FIG. 3(a), the outer shape of the supporting glass substrate 31 is a substantially circular wafer shape. Further, the outer shape of the supporting glass substrate 31 includes a notch portion 32 and an outer shape portion 33 that occupies an outer shape region other than the notch portion 32. The notch portion 32 has a notch shape, that is, a shape having a depression. The deep portion 34 of the notch shape has a substantially circular shape with an arc when viewed in plan, and the boundary between the notch portion 32 and the outer shape portion 33 is also a substantially circular shape with an arc. As shown in FIG. 3(b), the outer shape of the supporting glass substrate 35 is a substantially circular wafer shape. Further, the outer shape of the supporting glass substrate 35 includes a notch portion 36 and an outer shape portion 37 that occupies an outer shape region other than the notch portion 36. The notch portion 36 that supports the glass substrate 35 has a notch shape, and the deep portion 38 of the notch shape has a substantially V-groove shape.

Fig. 4 is a conceptual cross-sectional view taken along line A-A' of Fig. 3(a). As shown in FIG. 4, the edge region of the surface 39 supporting the glass substrate 31 and the surface 40 intersecting the end surface 41 has a chamfered surface 42 and a chamfered surface 43. The chamfer width X in the direction of the surface 39 and the surface 40 of the supporting glass substrate 31 is, for example, 50 μm to 900 μm, and the chamfer width Y+Y' of the thickness direction of the supporting glass substrate 31 is, for example, 20% of the sheet thickness t. 80%. Further, the end surface 41, the chamfered surface 42 and the chamfered surface 43 are connected in a state in which the arc is continuously continuous, and the surface 39, the surface 40, the chamfered surface 42, and the chamfered surface 43 are continuously arc-shaped. Under the link. [Example 1]

The invention will now be described based on examples. Furthermore, the following examples are merely illustrative. The invention is not limited by the following examples.

Tables 1 and 2 show examples (sample No. 1 to sample No. 23) of the present invention. In addition, Table 3 shows a comparative example (sample No. 24 to sample No. 38) of the present invention.

[Table 1]

[Table 2]

[table 3]

First, the glass batch obtained by blending the glass raw material in the form of a glass composition in the table was placed in a platinum crucible and melted at 1600 ° C for 4 hours. When the glass batch was melted, it was stirred using a platinum stirrer for homogenization. Then, the molten glass was allowed to flow out onto the carbon plate, and after being formed into a plate shape, it was slowly cooled to a normal temperature at 3 ° C/min from a temperature higher than the slow cooling point by about 20 ° C. Each sample obtained, evaluated crack resistance, thermal expansion coefficient of the mean line within a temperature range of 20 ℃ ~ 200 ℃ of α _{20 ~ 200,} the thermal expansion coefficient of the mean line within a temperature range of 20 ℃ ~ 220 ℃ of α _{20 ~ 220,} thermal average linear expansion coefficient within a temperature range of 20 ℃ ~ 260 ℃ of α _{20 ~ 260,} the thermal expansion coefficient of average linear in the temperature range 30 ℃ ~ 380 ℃ of α _{30 ~ 380,} density, strain point Ps of, annealing point Ta, softening Point Ts, temperature at a high temperature viscosity of 10 ^4.0 dPa·s, temperature at a high temperature viscosity of 10 ^3.0 dPa·s, temperature at a high temperature viscosity of 10 ^2.5 dPa·s, liquidus temperature TL, viscosity at liquidus temperature TL, Young's modulus, stiffness coefficient and Pasang ratio.

The crack resistance refers to a load at which the crack generation rate is 50%, and the crack generation rate is measured as follows. First, in a constant temperature and humidity chamber maintained at a humidity of 30% and a temperature of 25 ° C, a Vickers indenter set to a predetermined load was driven into the glass surface (optical polishing surface) for 15 seconds, and after 15 seconds, The number of cracks generated at the four corners of the indentation was counted (set to an indentation of up to 4). In this way, the indenter was driven 20 times, and after the total number of cracks was found, it was obtained by the equation (the total number of generated cracks / 80) × 100.

The average linear thermal expansion coefficient in the temperature range is a value measured by a dilatometer.

The density is a value measured by a well-known Archimedes method.

The strain point Ps, the cold point Ta, and the softening point Ts are values measured based on the method of the American Society for Testing Material (ASTM) C336.

The temperature at a high temperature viscosity of 10 ^4.0 dPa·s, a high temperature viscosity of 10 ^3.0 dPa·s, and a high temperature viscosity of 10 ^2.5 dPa·s is a value measured by a platinum ball pulling method.

The liquidus temperature TL is a glass boat which is left at 50 mesh (300 μm) through a standard sieve of 30 mesh (500 μm), and is placed in a platinum boat. After being kept in a temperature gradient furnace for 24 hours, the crystal is precipitated by microscopic observation. The temperature is measured. The viscosity η at the liquidus temperature TL is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by a platinum ball pulling method.

The Young's modulus, the rigidity coefficient, and the Pasang ratio are values obtained by the resonance method.

As is clear from Tables 1 and 2, the crack resistance of the sample No. 1 to the sample No. 23 is 600 gf or more. Therefore, it is considered that cracking is less likely to occur during the conveyance of the laminated body in the manufacturing process of the fan-out type WLP. On the other hand, since the crack resistance of the sample No. 24 to the sample No. 38 is 494 gf or less, it is considered that cracks are likely to occur during the conveyance of the laminated body in the manufacturing process of the fan-out type WLP. [Embodiment 2]

First, the glass raw material is blended so as to have the glass composition described in Sample No. 1 to Sample No. 23 described in Tables 1 and 2, and then supplied to a glass melting furnace to be melted at 1600 ° C to 1700 ° C, and then melted. The molten glass was supplied to an overflow down-draw forming apparatus, and each formed into a plate thickness of 0.8 mm. For the obtained glass substrate, both surfaces were mechanically ground to reduce the overall thickness deviation (TTV) to less than 1 μm. After the obtained glass substrate was processed to have a thickness of f300 mm × 0.8 mm, both surfaces thereof were subjected to a grinding treatment by a polishing apparatus. Specifically, the both surfaces of the glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate are polished while rotating the glass substrate together with the pair of polishing pads. At the time of the polishing treatment, a part of the glass substrate may be controlled so as to extend beyond the polishing pad. Further, the polishing pad was made of urethane, and the polishing slurry used in the polishing treatment had an average particle diameter of 2.5 μm and a polishing rate of 15 m/min. The total thickness deviation (TTV) and the amount of warpage were measured by the Bow/Warp measuring device SBW-331ML/d manufactured by Kobelco Scientific Research Co., Ltd. for each of the obtained polished glass substrates. . As a result, the overall thickness deviation (TTV) was 0.85 μm or less, and the warpage amount was 35 μm or less.

1, 27‧‧ ‧ laminated body

10, 26, 31, 35‧‧‧Support glass substrate

11, 24‧‧‧Processing substrate

12‧‧‧ peeling layer

13, 21, 25‧‧‧ the next layer

20‧‧‧Support members

22‧‧‧Semiconductor wafer

23‧‧‧ Sealing material

28‧‧‧Wiring

29‧‧‧ solder bumps

32, 36‧‧‧ Notch

33, 37‧‧‧ shape parts

34, 38‧‧‧Deep part of the notch

39, 40‧‧‧ Supporting the surface of the glass substrate

41‧‧‧ Supporting the end face of the glass substrate

42, 43‧‧‧ Supporting the chamfered surface of the glass substrate

X, Y+Y'‧‧‧Chamfer width

T‧‧‧ plate thickness

Fig. 1 is a conceptual perspective view showing an example of a laminated body of the present invention. 2(a) to 2(g) are conceptual cross-sectional views showing a manufacturing procedure of the fan-out type WLP. 3(a) and 3(b) are upper conceptual views showing an example of a supporting glass substrate of the present invention. Fig. 4 is a conceptual cross-sectional view taken along line A-A' of Fig. 3(a).

Claims (13)

A supporting glass substrate for supporting a processed substrate, wherein the supporting glass substrate is characterized in that: as a glass composition, 45% to 70% of SiO ₂ and more than 10.5% to 35% of Al ₂ O are contained by mass% ₃ , 0% to 20% B ₂ O ₃ , 5% to 25% Na ₂ O, 0% to 10% K ₂ O, 1% to 10% MgO, and 0% to 5% ZnO, And the crack resistance is 500 gf or more. The supporting glass substrate according to claim 1, wherein the glass composition contains 50% to 67% of SiO ₂ and 19.7% to 33% of Al ₂ O ₃ and 0% to 15% by mass%. B ₂ O ₃ , 5% to 20% Na ₂ O, 0% to 3% K ₂ O, 1% to 5.5% MgO, and 0% to 3% ZnO, and the crack resistance is 700 gf or more. The supporting glass substrate according to claim 1 or 2, wherein an average linear thermal expansion coefficient in a temperature range of 20 ° C to 220 ° C is 40 × 10 ^-7 / ° C or more and 120 × 10 ^-7 / Below °C. The supporting glass substrate according to any one of claims 1 to 3, wherein an average linear thermal expansion coefficient in a temperature range of from 20 ° C to 260 ° C is 40 × 10 ^-7 / ° C or more and 120 × 10 ^-7 / °C or less. The supporting glass substrate according to any one of claims 1 to 4, wherein an average linear thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C is 42 × 10 ^-7 / ° C or more and 125 × 10 ^-7 / °C or less. The supporting glass substrate according to any one of claims 1 to 5, which has a wafer shape or a substantially circular plate shape having a diameter of 100 mm to 500 mm, a plate thickness of less than 2.0 mm, and an overall thickness deviation (TTV) is 5 μm or less, and the amount of warpage is 60 μm or less. A laminated body comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and the laminated body is characterized in that the supporting glass substrate is any one of items 1 to 6 of the patent application scope The supporting glass substrate. The laminated body according to claim 7, wherein the processed substrate includes at least a semiconductor wafer formed by a sealing material. A method of manufacturing a semiconductor package, comprising: preparing a layer including at least a processed substrate and a supporting glass substrate for supporting the processed substrate; and a step of processing the processed substrate; and the supporting The glass substrate is a supporting glass substrate as described in any one of claims 1 to 6. The method of manufacturing a semiconductor package according to claim 9, wherein the processing includes a step of wiring on a surface of the processed substrate. The method of manufacturing a semiconductor package according to claim 9 or claim 10, wherein the processing includes the step of forming a solder bump on a surface of the processed substrate. A semiconductor package produced by the method of manufacturing a semiconductor package according to any one of claims 9 to 11. An electronic device comprising a semiconductor package, and the electronic device is characterized in that: the semiconductor package is the semiconductor package according to claim 12 of the patent application.