TWI683020B - 成膜方法及成膜裝置 - Google Patents
成膜方法及成膜裝置 Download PDFInfo
- Publication number
- TWI683020B TWI683020B TW105101039A TW105101039A TWI683020B TW I683020 B TWI683020 B TW I683020B TW 105101039 A TW105101039 A TW 105101039A TW 105101039 A TW105101039 A TW 105101039A TW I683020 B TWI683020 B TW I683020B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- substrate
- plasma
- sputtering
- field
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 272
- 210000002381 plasma Anatomy 0.000 claims abstract description 164
- 239000010408 film Substances 0.000 claims abstract description 160
- 238000004544 sputter deposition Methods 0.000 claims abstract description 137
- 239000010409 thin film Substances 0.000 claims abstract description 76
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 57
- 239000002245 particle Substances 0.000 claims abstract description 32
- 150000002500 ions Chemical class 0.000 claims abstract description 29
- 238000009832 plasma treatment Methods 0.000 claims abstract description 24
- 238000012958 reprocessing Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 99
- 238000012545 processing Methods 0.000 claims description 34
- 239000011261 inert gas Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000376 reactant Substances 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- 229910052717 sulfur Inorganic materials 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000013076 target substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2015/067507 WO2016203585A1 (fr) | 2015-06-17 | 2015-06-17 | Procédé de formation de film et dispositif de formation de film |
| WOPCT/JP2015/067507 | 2015-06-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201700757A TW201700757A (zh) | 2017-01-01 |
| TWI683020B true TWI683020B (zh) | 2020-01-21 |
Family
ID=55388747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105101039A TWI683020B (zh) | 2015-06-17 | 2016-01-14 | 成膜方法及成膜裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6533511B2 (fr) |
| CN (2) | CN205062167U (fr) |
| TW (1) | TWI683020B (fr) |
| WO (1) | WO2016203585A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI773387B (zh) * | 2020-07-30 | 2022-08-01 | 日商新柯隆股份有限公司 | 轉移裝置及使用此之成膜裝置 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6392912B2 (ja) * | 2017-01-31 | 2018-09-19 | 学校法人東海大学 | 成膜方法 |
| JP6379318B1 (ja) * | 2017-06-14 | 2018-08-22 | 株式会社アルバック | 成膜装置及び成膜方法並びに太陽電池の製造方法 |
| JP6476261B1 (ja) * | 2017-10-17 | 2019-02-27 | 株式会社神戸製鋼所 | 成膜方法 |
| JP7056290B2 (ja) * | 2018-03-23 | 2022-04-19 | Tdk株式会社 | 薄膜キャパシタ、及び薄膜キャパシタの製造方法 |
| JP7202815B2 (ja) * | 2018-08-31 | 2023-01-12 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| CN209065995U (zh) * | 2018-10-15 | 2019-07-05 | 株式会社新柯隆 | 成膜装置 |
| WO2020183827A1 (fr) * | 2019-03-12 | 2020-09-17 | 株式会社アルバック | Procédé de formation de film |
| US20200354826A1 (en) * | 2019-05-08 | 2020-11-12 | Intevac, Inc. | Method to produce high density diamond like carbon thin films |
| WO2020246449A1 (fr) * | 2019-06-06 | 2020-12-10 | 芝浦メカトロニクス株式会社 | Appareil de formation de film |
| KR102745560B1 (ko) * | 2019-06-24 | 2024-12-20 | 트럼프 휴팅거 에스피 제트 오.오. | 플라즈마에 전력을 공급하는 전력 공급부의 출력 전력을 조정하는 방법, 플라즈마 장치 및 전력 공급부 |
| CN112779507B (zh) * | 2019-11-11 | 2024-02-09 | 株式会社新柯隆 | 成膜装置 |
| JP7111380B2 (ja) * | 2020-04-01 | 2022-08-02 | 株式会社シンクロン | スパッタ装置及びこれを用いた成膜方法 |
| WO2022259368A1 (fr) * | 2021-06-08 | 2022-12-15 | 株式会社シンクロン | Dispositif d'application de polarisation |
| CN116791048A (zh) * | 2023-06-28 | 2023-09-22 | 安徽其芒光电科技有限公司 | 偏压溅射镀膜装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120045588A1 (en) * | 2010-08-23 | 2012-02-23 | Vaeco Inc. | Deposition system with a rotating drum |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714769A (ja) * | 1993-06-22 | 1995-01-17 | Hitachi Ltd | 半導体製造装置 |
| JP3824993B2 (ja) * | 2002-12-25 | 2006-09-20 | 株式会社シンクロン | 薄膜の製造方法およびスパッタリング装置 |
| JP2005036276A (ja) * | 2003-07-18 | 2005-02-10 | Kawasaki Heavy Ind Ltd | 複合構造薄膜製造方法及び装置 |
| JP4613015B2 (ja) * | 2004-02-10 | 2011-01-12 | 株式会社アルバック | 成膜方法及び成膜装置 |
| JP4773347B2 (ja) * | 2004-03-15 | 2011-09-14 | 株式会社アルバック | 成膜装置及びその成膜方法 |
| US20110100806A1 (en) * | 2008-06-17 | 2011-05-05 | Shincron Co., Ltd. | Bias sputtering device |
| CN102084025B (zh) * | 2008-09-05 | 2013-12-04 | 新柯隆株式会社 | 成膜方法以及防油性基材 |
-
2015
- 2015-06-17 WO PCT/JP2015/067507 patent/WO2016203585A1/fr not_active Ceased
- 2015-06-17 JP JP2016501253A patent/JP6533511B2/ja active Active
- 2015-10-28 CN CN201520843493.5U patent/CN205062167U/zh not_active Expired - Fee Related
- 2015-10-28 CN CN201510711369.8A patent/CN106256927B/zh active Active
-
2016
- 2016-01-14 TW TW105101039A patent/TWI683020B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120045588A1 (en) * | 2010-08-23 | 2012-02-23 | Vaeco Inc. | Deposition system with a rotating drum |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI773387B (zh) * | 2020-07-30 | 2022-08-01 | 日商新柯隆股份有限公司 | 轉移裝置及使用此之成膜裝置 |
| US12270100B2 (en) | 2020-07-30 | 2025-04-08 | Shincron Co., Ltd. | Transfer apparatus and film deposition apparatus using transfer apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106256927B (zh) | 2020-02-07 |
| JP6533511B2 (ja) | 2019-06-19 |
| CN205062167U (zh) | 2016-03-02 |
| CN106256927A (zh) | 2016-12-28 |
| JPWO2016203585A1 (ja) | 2018-04-05 |
| WO2016203585A1 (fr) | 2016-12-22 |
| TW201700757A (zh) | 2017-01-01 |
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