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WO2020246449A1 - Appareil de formation de film - Google Patents

Appareil de formation de film Download PDF

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Publication number
WO2020246449A1
WO2020246449A1 PCT/JP2020/021712 JP2020021712W WO2020246449A1 WO 2020246449 A1 WO2020246449 A1 WO 2020246449A1 JP 2020021712 W JP2020021712 W JP 2020021712W WO 2020246449 A1 WO2020246449 A1 WO 2020246449A1
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WO
WIPO (PCT)
Prior art keywords
film
work
unit
process gas
ion irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/021712
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English (en)
Japanese (ja)
Inventor
大祐 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to CN202080040665.9A priority Critical patent/CN113924384B/zh
Priority to JP2021524846A priority patent/JP7469303B2/ja
Publication of WO2020246449A1 publication Critical patent/WO2020246449A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment

Definitions

  • the present invention relates to a film forming apparatus.
  • An optical film is formed in an optical device, and this optical film reflects light in a predetermined wavelength region and transmits light in another wavelength region.
  • the optical device include cold mirrors such as liquid crystal projectors, copiers, and condensing mirrors of infrared sensors.
  • the cold mirror is formed with a laminated film as an optical film that reflects visible light and transmits light in a predetermined wavelength region.
  • a method for forming such a laminated film a method by sputtering is known in which particles constituting the target are knocked out by exposing the target made of a film forming material to plasma and the particles are deposited on the work.
  • the laminated film formed by sputtering has irregularities on the surface of the film due to the formation of sparse and dense portions of accumulated particles.
  • the laminated film which is an optical film in which films having irregularities on the surface are laminated in this way, diffused reflection of light occurs at the interface between the films, and optical characteristics such as transmittance may deteriorate.
  • the present invention has been made to solve the above problems, and an object of the present invention is to provide a film forming apparatus capable of forming a flat film in which deterioration of optical characteristics is suppressed.
  • the film forming apparatus of the present invention is a film forming apparatus for forming a film on a work, and has a chamber in which the inside can be made into a gas and a chamber provided in the chamber, and the work is conveyed in a circumferential transport path. It has a transport unit having a rotary table for circulating transport, a target made of a material constituting the film, and a plasma generator for converting sputter gas introduced between the target and the rotary table into plasma. The target is sputtered to form a film on the work, and the tubular body that projects into the internal space of the chamber and opens toward the transport path and the opening of the tubular body are closed.
  • the processing is performed through the window member provided as described above, the first process gas introduction unit for introducing the first process gas into the processing space formed between the rotary table and the tubular body, and the window member. It has an antenna that generates an electric field in the space and a power supply that applies a high-frequency voltage to the antenna.
  • the first process gas is turned into plasma to generate inductively coupled plasma in the processing space, and the film is chemically reacted.
  • An ion irradiation unit that has a two-process gas introduction unit and a power source that applies a high-frequency voltage to the tubular electrode, and irradiates the film with ions generated by turning the second process gas into a plasma.
  • the transport unit circulates and transports the work so as to pass through the film-forming processing unit, the film processing unit, and the ion irradiation unit, and the ion irradiation unit is in the process of forming on the work. Irradiate the membrane with ions.
  • the present invention it is possible to obtain a film forming apparatus capable of forming a flat film in which deterioration of optical characteristics is suppressed.
  • FIG. 1 is a sectional view taken along the line AA of FIG. It is a cross-sectional view of BB of FIG. It is a flowchart of the process by the film forming apparatus which concerns on embodiment. It is a schematic diagram which shows the processing process of the work by the film forming apparatus which concerns on embodiment.
  • TEM transmission electron microscope
  • 6 is an enlarged cross-sectional image of the surface layer 8 layer portion of Examples 1 and 2 and Comparative Example 1, (a) is a cross-sectional image of Example 1, (b) is a cross-sectional image of Example 2, and (c) is a cross-sectional image of Comparative Example 1. Is. It is a graph which shows the maximum height Rz of each layer of Examples 1 and 2 and Comparative Example 1. 6 is a graph showing the standard deviation of the maximum height Rz of each layer of Examples 1 and 2 and Comparative Example 1.
  • FIG. 1 is a perspective plan view schematically showing the configuration of the film forming apparatus 100 of the present embodiment.
  • the film forming apparatus 100 is an apparatus for forming a film on the work 10.
  • the work 10 is a glass substrate or a resin substrate.
  • the film formed on the work 10 by the film forming apparatus 100 is a laminated film in which a plurality of films are laminated.
  • the film is a laminated film to be an optical film, for example, a SiO 2 film and an Nb 2 O 5 film are alternately laminated.
  • the film forming apparatus 100 includes a chamber 20, a conveying section 30, a film forming processing section 40, a film processing section 50, an ion irradiation section 60, a load lock section 70, and a control device 80.
  • the chamber 20 is a cylindrical container whose inside can be evacuated.
  • the inside of the chamber 20 is partitioned by a partition portion 22, and is divided into a plurality of sections in a fan shape.
  • Any one of the film formation processing unit 40, the film processing unit 50, the ion irradiation unit 60, and the load lock unit 70 is arranged in each section.
  • Each of the parts 40, 50, 60, 70 is a film forming processing part 40, a film processing part 50, an ion irradiation part 60, and a load lock part 70 with respect to the carrying direction by the carrying part 30 (counterclockwise direction in FIG. 1). They are arranged in order.
  • the film processing unit 50 and the ion irradiation unit 60 are provided adjacent to each other.
  • the chamber 20 is formed by being surrounded by a disk-shaped ceiling 20a, a disk-shaped inner bottom surface 20b, and an annular inner peripheral surface 20c.
  • the partition portion 22 is a square wall plate radially arranged from the center of the cylindrical shape, extends from the ceiling 20a toward the inner bottom surface 20b, and does not reach the inner bottom surface 20b. That is, a columnar space is secured on the inner bottom surface 20b side.
  • a rotary table 31 for transporting the work 10 is arranged in this columnar space.
  • the lower end of the partition portion 22 faces the mounting surface of the work 10 on the rotary table 31 with a gap through which the work 10 mounted on the transport portion 30 passes.
  • the partitioning portion 22 partitions the processing space in which the work 10 is processed in the film forming processing section 40, the film processing section 50, and the ion irradiation section 60.
  • the sputter gas G1 of the film forming unit 40, the process gas (first process gas) G2 of the film processing unit 50, and the process gas (second process gas) G3 of the ion irradiation unit 60 is possible to suppress the diffusion within 20.
  • the chamber 20 is provided with an exhaust port 21.
  • An exhaust unit 90 is connected to the exhaust port 21.
  • the exhaust unit 90 includes piping, a pump, a valve and the like (not shown). The inside of the chamber 20 can be depressurized to create a vacuum by exhausting from the exhaust unit 90 through the exhaust port 21.
  • the transport unit 30 has a rotary table 31, a motor 32, and a holding unit 33, and circulates and transports the work 10 along a transport path L which is a circumferential locus. That is, the transport unit 30 circulates and transports the work 10 so as to pass through the film formation processing unit 40, the film processing unit 50, and the ion irradiation unit 60 in this order. Therefore, the transport unit 30 transports the work 10 so that the work 10 alternately passes through the film forming processing unit 40 and the ion irradiation unit 60.
  • the rotary table 31 has a disk shape and is greatly expanded so as not to come into contact with the inner peripheral surface 20c.
  • the motor 32 continuously rotates at a predetermined rotation speed about the center of the circle of the rotary table 31 as a rotation axis. In this embodiment, the motor 32 rotates the rotary table 31 counterclockwise as shown in FIG.
  • the holding portion 33 is a groove, a hole, a protrusion, a jig, a holder, or the like arranged on the upper surface of the rotary table 31 at a circumferentially equal distribution position, and holds the tray 34 on which the work 10 is placed by a mechanical chuck or an adhesive chuck. To do.
  • the works 10 are arranged in a matrix on the tray 34, for example, and six holding portions 33 are arranged on the rotary table 31 at intervals of 60 °.
  • the film forming processing unit 40 generates plasma and exposes the target 42 made of the film forming material to the plasma. As a result, the film forming processing unit 40 deposits the particles constituting the target 42, which are ejected by colliding the ions contained in the plasma with the target 42, on the work 10 to form a film. As shown in FIG. 2, the film forming processing unit 40 includes a plasma generator including a target 42, a backing plate 43, and an electrode 44, a power supply unit 46, and a sputtering gas introduction unit 49. Be prepared.
  • the target 42 is a plate-shaped member made of a film-forming material that is deposited on the work 10 to form a film.
  • the target 42 serves as a source of particles forming a film formed on the work 10.
  • the target 42 is provided at a distance from the transport path L of the work 10 placed on the rotary table 31.
  • the surface of the target 42 is held on the ceiling 20a of the chamber 20 so as to face the work 10 placed on the rotary table 31.
  • three targets 42 are installed.
  • the three targets 42 are provided at positions arranged on the vertices of the triangle in a plan view.
  • the backing plate 43 is a support member that holds the target 42.
  • the backing plate 43 holds each target 42 individually.
  • the electrode 44 is a conductive member for individually applying electric power to each target 42 from the outside of the chamber 20, and is electrically connected to the target 42. The power applied to each target 42 can be changed individually.
  • the sputtering source is appropriately provided with a magnet, a cooling mechanism, and the like, if necessary.
  • the power supply unit 46 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 44.
  • the power supply unit 46 applies electric power to the target 42 through the electrode 44.
  • the rotary table 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 42 side.
  • the power supply unit 46 may be an RF power supply for performing high frequency sputtering.
  • the sputter gas introduction unit 49 introduces the sputter gas G1 into the chamber 20.
  • the sputter gas introduction unit 49 includes a supply source of sputter gas G1 such as a cylinder (not shown), a pipe 48, and a gas introduction port 47.
  • the pipe 48 is connected to the supply source of the sputter gas G1 and airtightly penetrates the chamber 20 to extend into the chamber 20 and its end is opened as a gas introduction port 47.
  • the gas introduction port 47 is opened between the rotary table 31 and the target 42, and the sputter gas G1 for film formation is introduced into the processing space 41 formed between the rotary table 31 and the target 42.
  • An inert gas can be adopted as the sputter gas G1, and argon gas or the like is preferable.
  • a film forming processing unit 40 when the sputtering gas G1 is introduced from the sputtering gas introducing unit 49 and the power supply unit 46 applies a high voltage to the target 42 through the electrode 44, it is formed between the rotary table 31 and the target 42.
  • the sputter gas G1 introduced into the processing space 41 is turned into plasma, and active species such as ions are generated.
  • the ions in the plasma collide with the target 42 and eject the particles constituting the target 42 (hereinafter, also referred to as target constituent particles). Further, the work 10 circulated and conveyed by the rotary table 31 passes through the processing space 41.
  • the knocked-out target constituent particles are deposited on the work 10 when the work 10 passes through the processing space 41, and a film composed of the target constituent particles is formed on the work 10.
  • the work 10 is circulated and conveyed by the rotary table 31, and the film forming process is performed by repeatedly passing through the processing space 41.
  • the film thickness of the film deposited each time it passes through the film-forming unit 40 depends on the processing rate of the film-forming unit 50, but is preferably a thin film of, for example, about 1 to 2 atoms (5 nm or less).
  • the pressure of the sputtering gas in the film forming processing unit 40 can be 0.3 Pa or less, and the pressure is from 0.3 Pa as long as the plasma generated in the processing space 41 of the film forming processing unit 40 can be maintained. Can also be lowered.
  • the film forming apparatus 100 includes a plurality of (two in this case) film forming processing sections 40, and the film forming processing section 40 is provided in two sections separated by the dividing section 22.
  • the plurality of film forming processing units 40 form a film composed of layers of a plurality of film forming materials by selectively depositing the film forming materials.
  • a film composed of layers of a plurality of types of film-forming materials is formed by selectively depositing the film-forming materials including a sputtering source corresponding to different types of film-forming materials.
  • Including a sputtering source corresponding to a different type of film forming material means that even if the film forming materials of all the film forming processing units 40 are different, the film forming material is common to the plurality of film forming processing units 40, but other Including cases where is different from this.
  • To selectively deposit one type of film-forming material one by one means that while the film-forming processing unit 40 of any one type of film-forming material performs film-forming, the film-forming processing unit 40 of another film-forming material forms a film. It means not to do.
  • the target 42 of one film forming processing section 40 is made of silicon (Si), and the target 42 of the other film forming processing section 40 is made of niobium (Nb). While forming the silicon film, the niobium film is not formed, and while the niobium film is being formed, the silicon film is not formed.
  • the film forming processing unit 40 having the target 42 made of silicon (Si) is referred to as the film forming processing unit 40a, and the target 42 made of niobium (Nb) is provided.
  • the film forming processing section 40 is referred to as a film forming processing section 40b.
  • the film processing unit 50 generates inductively coupled plasma in the processing space 59 into which the process gas is introduced, and chemically reacts the ions in the plasma with the film formed on the work 10 by the film forming processing unit 40.
  • the process gas introduced includes, for example, oxygen or nitrogen.
  • the process gas may contain an inert gas such as argon gas in addition to oxygen gas or nitrogen gas.
  • the film processing unit 50 oxidizes the film on the work 10.
  • the film processing unit 50 nitrides the film on the work 10.
  • the process gas of this embodiment is oxygen.
  • the film processing unit 50 turns oxygen gas into plasma and chemically reacts the ions in the plasma with the silicon film or niobium film on the outermost surface of the work 10 to form a SiO 2 film and an Nb 2 O 5 film.
  • the film processing unit 50 has a plasma generator composed of a tubular body 51, a window member 52, an antenna 53, an RF power supply 54, a matching box 55, and a process gas introduction unit 58.
  • the tubular body 51 is a rectangular cylinder with a rounded horizontal cross section and has an opening.
  • the tubular body 51 is fitted into the ceiling 20a of the chamber 20 so that its opening is separated from the rotary table 31 side, and protrudes into the internal space of the chamber 20.
  • the tubular body 51 is made of the same material as the rotary table 31.
  • the window member 52 is a flat plate of a dielectric material such as quartz having a shape substantially similar to the horizontal cross section of the tubular body 51.
  • the window member 52 is provided so as to close the opening of the tubular body 51, and partitions the processing space 59 in the chamber 20 into which the process gas G2 containing oxygen gas is introduced and the inside of the tubular body 51.
  • the processing space 59 is a space formed between the rotary table 31 and the inside of the tubular body 51 in the film processing unit 50. Oxidation treatment is performed by repeatedly passing the work 10 circulated and conveyed by the rotary table 31 through the processing space 59.
  • the window member 52 may be a dielectric material such as alumina or a semiconductor such as silicon.
  • the antenna 53 is a conductor wound in a coil shape, is arranged in the internal space of the tubular body 51 separated from the processing space 59 in the chamber 20 by the window member 52, and an electric field is generated by passing an alternating current. To generate. It is desirable that the antenna 53 be arranged in the vicinity of the window member 52 so that the electric field generated from the antenna 53 is efficiently introduced into the processing space 59 via the window member 52.
  • An RF power supply 54 for applying a high frequency voltage is connected to the antenna 53.
  • a matching box 55 which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedances on the input side and the output side.
  • the process gas introduction unit 58 introduces the process gas G2 containing oxygen gas into the processing space 59.
  • the process gas introduction unit 58 has a supply source of process gas G2 such as a cylinder (not shown), a pipe 57, and a gas introduction port 56.
  • the pipe 57 is connected to the supply source of the process gas G2, airtightly penetrates the chamber 20 and extends into the chamber 20, and its end is opened as a gas introduction port 56.
  • the gas introduction port 56 opens in the processing space 59 between the window member 52 and the rotary table 31 to introduce the process gas G2.
  • a high frequency voltage is applied from the RF power supply 54 to the antenna 53.
  • a high-frequency current flows through the antenna 53, and an electric field due to electromagnetic induction is generated.
  • An electric field is generated in the processing space 59 via the window member 52, and inductively coupled plasma of the process gas G2 is generated.
  • the oxygen gas is also ionized, and the oxygen ions collide with the membrane on the work 10 and bond with the atoms constituting the membrane.
  • the film on the work 10 is oxidized, and an oxide film is formed as a compound film.
  • the ion irradiation unit 60 irradiates the object with ions.
  • the ion irradiation unit 60 turns the process gas into plasma and irradiates the object with ions contained in the plasma.
  • the object is a film in the process of formation on the work 10.
  • the film in the process of being formed on the work 10 is a film formed on the work 10 up to a film having a desired film thickness, and specifically, on the work 10 treated by the film processing unit 50. It is a compound film or a film on the work 10 formed by the film forming processing unit 40.
  • the transport unit 30 circulates and transports the work 10 so that the work 10 passes through the film formation processing unit 40, the film treatment unit 50, and the ion irradiation unit 60, so that the ion irradiation unit 60 is the film treatment unit.
  • the compound film on the work 10 treated with 50 is irradiated with ions.
  • the transporting section 30 is the work 10.
  • the ion irradiation unit 60 includes a plasma generator including a tubular electrode 61, a shield 64, an RF power supply 66, and a process gas introduction unit 65.
  • the ion irradiation unit 60 includes a tubular electrode 61 provided from the upper part to the inside of the chamber 20.
  • the tubular electrode 61 has a square tubular shape, has an opening 61a at one end, and is closed at the other end.
  • the tubular electrode 61 is attached to the opening 21a provided on the top surface of the chamber 20 via an insulating member 62 so that one end having the opening 61a faces the rotary table 31.
  • the side wall of the tubular electrode 61 extends inside the chamber 20.
  • a flange 61b projecting outward is provided at the end of the tubular electrode 61 opposite to the opening 61a.
  • the insulating member 62 is fixed between the flange 61b and the peripheral edge of the opening 21a of the chamber 20 to keep the inside of the chamber 20 airtight.
  • the insulating member 62 may be made of a material such as PTFE (polytetrafluoroethylene), for example, as long as it has an insulating property and is not limited to a specific material.
  • the opening 61a of the tubular electrode 61 is arranged at a position facing the transport path L of the rotary table 31.
  • the rotary table 31, as the transport unit 30, transports the tray 34 on which the work 10 is mounted and passes the position facing the opening 61a.
  • the opening 61a of the tubular electrode 61 is larger than the size of the tray 34 in the radial direction of the rotary table 31.
  • the tubular electrode 61 has a fan shape that expands in diameter from the center side to the outside in the radial direction of the rotary table 31 when viewed from the plane direction.
  • the fan shape here means the shape of the fan surface of the fan.
  • the opening 61a of the tubular electrode 61 is also fan-shaped. The speed at which the tray 34 on the rotary table 31 passes through the position facing the opening 61a becomes slower toward the center side in the radial direction of the rotary table 31 and becomes faster toward the outside. Therefore, if the opening 61a is merely a rectangle or a square, there will be a difference in the time required for the work 10 to pass the position facing the opening 61a between the center side and the outside in the radial direction.
  • the time for passing through the opening 61a can be made constant, and the plasma treatment described later can be made uniform.
  • a rectangle or a square may be used as long as the difference in passing time does not cause a problem in the product.
  • the tubular electrode 61 penetrates the opening 21a of the chamber 20 and a part thereof is exposed to the outside of the chamber 20.
  • the portion of the tubular electrode 61 exposed to the outside of the chamber 20 is covered with the housing 63 as shown in FIG.
  • the housing 63 keeps the space inside the chamber 20 airtight.
  • the portion of the tubular electrode 61 located inside the chamber 20, that is, the periphery of the side wall is covered with a shield 64.
  • the shield 64 is a fan-shaped square tube coaxial with the tubular electrode 61, and is larger than the tubular electrode 61.
  • the shield 64 is connected to the chamber 20. Specifically, the shield 64 is erected from the edge of the opening 21a of the chamber 20, and the end extending toward the inside of the chamber 20 is located at the same height as the opening 61a of the tubular electrode 61. Since the shield 64 acts as a cathode like the chamber 20, it is preferable to use a conductive metal member having low electrical resistance.
  • the shield 64 may be integrally molded with the chamber 20, or may be attached to the chamber 20 by using a fixing bracket or the like.
  • the shield 64 is provided to stably generate plasma in the tubular electrode 61.
  • Each side wall of the shield 64 is provided so as to extend substantially parallel to each side wall of the tubular electrode 61 through a predetermined gap. If the gap becomes too large, the capacitance becomes small and the plasma generated in the tubular electrode 61 enters the gap, so it is desirable that the gap is as small as possible. However, even if the gap becomes too small, the capacitance between the tubular electrode 61 and the shield 64 becomes large, which is not preferable.
  • the size of the gap may be appropriately set according to the capacitance required for plasma generation.
  • FIG 3 shows only two side wall surfaces extending in the radial direction of the shield 64 and the tubular electrode 61, there is also a radius between the two side wall surfaces extending in the circumferential direction of the shield 64 and the tubular electrode 61. A gap of the same size as the side wall surface in the direction is provided.
  • the process gas introduction unit 65 is connected to the tubular electrode 61.
  • the process gas introduction unit 65 includes a gas supply source for process gas G3 (not shown), a pump, a valve, and the like.
  • the process gas introduction unit 65 introduces the process gas G3 into the tubular electrode 61.
  • the process gas G3 can be appropriately changed depending on the purpose of treatment.
  • the process gas G3 may contain argon gas, oxygen gas or nitrogen gas, or oxygen gas or nitrogen gas in addition to argon gas.
  • An RF power supply 66 for applying a high frequency voltage is connected to the tubular electrode 61.
  • a matching box 67 which is a matching circuit, is connected in series to the output side of the RF power supply 66.
  • the RF power supply 66 is also connected to the chamber 20.
  • the tubular electrode 61 acts as an anode
  • the chamber 20, shield 64, rotary table 31, and tray 34 act as cathodes. That is, it functions as an electrode for reverse sputtering. Therefore, as described above, the rotary table 31 and the tray 34 have conductivity and are in contact with each other so as to be electrically connected.
  • the matching box 67 stabilizes the plasma discharge by matching the impedances on the input side and the output side.
  • the chamber 20 and the rotary table 31 are grounded.
  • the shield 64 connected to the chamber 20 is also grounded.
  • Both the RF power supply 66 and the process gas introduction unit 65 are connected to the tubular electrode 61 via a through hole provided in the housing 63.
  • argon gas which is a process gas G3
  • a high frequency voltage is applied from the RF power supply 66 to the tubular electrode 61
  • capacitively coupled plasma is generated and the argon gas is turned into plasma.
  • electrons, ions, radicals, etc. are generated.
  • the generated plasma ions are irradiated to the film in the process of formation on the work 10.
  • the ion irradiation unit 60 has a tubular electrode 61 having an opening 61a at one end and into which the process gas G3 is introduced, and an RF power supply 66 that applies a high frequency voltage to the tubular electrode 61.
  • the transport unit 30 transports the work 10 directly under the opening 61a and allows the work 10 to pass therethrough, so that ions are drawn into the film formed on the work 10 and ion irradiation is performed.
  • a negative bias voltage is applied to the tray 34 on which the work 10 is placed and the rotary table 31 in order to draw ions into the film formed on the work 10.
  • the tray 34 on which the work 10 is placed remains at the ground potential of these members without applying a high-frequency voltage to the tray 34 or the rotary table 31.
  • a desired negative bias voltage to the rotary table 31
  • ions can be drawn into the formed thin film.
  • the area ratio of the electrode as the anode to the area of other members surrounding the electrode as the cathode can be changed. There is no need to consider it, which facilitates device design.
  • the film is formed on the work 10 with a simple structure. Ions can be drawn into the membrane.
  • the film processing unit 50 has a function of forming a compound film by plasmaizing oxygen gas or nitrogen gas to generate ions and chemically reacting with the film formed on the work 10.
  • the film processing unit 50 efficiently chemically reacts the ions in the plasma with the film formed on the work 10 by the film forming process unit 40 to form a compound. It is possible to form a membrane.
  • the ion irradiation unit 60 has a function of applying a negative bias voltage to the tray 34 on which the work 10 is placed and the rotary table 31 to draw ions into the film formed on the work 10 and flatten the thin film. ..
  • a negative bias voltage to the tray 34 on which the work 10 is placed and the rotary table 31 to draw ions into the film formed on the work 10 and flatten the thin film. ..
  • the tubular electrode 61 it is possible to easily draw ions into the film formed on the work 10 and perform flattening.
  • the load lock portion 70 carries the tray 34 on which the unprocessed work 10 is mounted from the outside into the chamber 20 by a transport means (not shown) while maintaining the vacuum of the chamber 20, and mounts the processed work 10 on the tray 34.
  • This is a device for discharging the tray 34 to the outside of the chamber 20. Since a well-known structure can be applied to the load lock portion 70, the description thereof will be omitted.
  • the control device 80 controls various elements constituting the film forming apparatus 100, such as the exhaust unit 90, the sputter gas introduction unit 49, the process gas introduction units 58 and 65, the power supply unit 46, the RF power supply 54 and 66, and the transfer unit 30. ..
  • the control device 80 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program describing the control contents.
  • the contents to be controlled include the initial exhaust pressure of the film forming apparatus 100, the electric power applied to the target 42 and the antenna 53, the flow rates of the sputter gas G1 and the process gases G2 and G3, the introduction time and the exhaust time, and the film forming time. , The rotation speed of the motor 32 and the like.
  • the control device 80 can support a wide variety of film formation specifications.
  • FIG. 4 is a flowchart of processing by the film forming apparatus 100 according to the present embodiment.
  • the tray 34 on which the work 10 is mounted is sequentially carried into the chamber 20 from the load lock portion 70 by the transport means (step S01).
  • the rotary table 31 sequentially moves the empty holding portion 33 to the loading location from the load lock portion 70.
  • the holding unit 33 individually holds the trays 34 carried in by the conveying means. In this way, all the trays 34 on which the work 10 to be formed is mounted are placed on the rotary table 31.
  • the inside of the chamber 20 is exhausted from the exhaust port 21 by the exhaust unit 90 and is constantly depressurized.
  • the inside of the chamber 20 is depressurized to a predetermined pressure (step S02).
  • the rotary table 31 on which the work 10 is placed rotates and reaches a predetermined rotation speed (step S03).
  • the film forming processing unit 40a first starts operation to form a silicon film on the work 10 (step S04). That is, the sputter gas introduction unit 49 supplies the sputter gas G1 through the gas introduction port 47.
  • the sputter gas G1 is supplied around the target 42 made of a silicon material.
  • the power supply unit 46 applies a voltage to the target 42.
  • the sputtering gas G1 is turned into plasma.
  • the ions generated by the plasma collide with the target 42 and knock out silicon particles. Silicon particles are deposited on the surface of the work 10 that passes through the film forming processing section 40a each time the work 10 is passed, and a silicon film is formed.
  • the work 10 on which the silicon film is formed by passing through the film forming processing section 40a by the rotation of the rotary table 31 heads toward the film processing section 50, and the silicon film is oxidized by the film processing section 50 (step S05). That is, the process gas introduction unit 58 supplies the process gas G2 containing oxygen gas through the gas introduction port 56.
  • the process gas G2 containing oxygen gas is supplied to the processing space 59 sandwiched between the window member 52 and the rotary table 31.
  • the RF power supply 54 applies a high frequency voltage to the antenna 53.
  • the electric field generated by the antenna 53 through which the high-frequency current flows due to the application of the high-frequency voltage is generated in the processing space 59 via the window member 52, and excites the process gas G2 containing oxygen gas supplied to this space. Generate plasma.
  • the oxygen ions generated by the plasma collide with the silicon film formed on the work 10 and are combined with silicon, and the silicon film on the work 10 is converted into a SiO 2 film.
  • the work 10 which has passed through the film processing unit 50 by the rotation of the rotary table 31 and has the SiO 2 film formed is directed to the ion irradiation unit 60, and the SiO 2 film is irradiated with ions by the ion irradiation unit 60 (step). S06). That is, the process gas introduction unit 65 supplies the process gas G3 containing argon gas through the pipe. The process gas G3 is supplied to the space inside the tubular electrode 61 surrounded by the tubular electrode 61 and the rotary table 31.
  • the tubular electrode 61 When a voltage is applied to the tubular electrode 61 by the RF power supply 66, the tubular electrode 61 acts as an anode, the chamber 20, the shield 64, the rotary table 31, and the tray 34 act as a cathode, and the space inside the tubular electrode 61.
  • the process gas G3 supplied to the is excited to generate plasma. Further, the argon ions generated by the plasma collide with the SiO 2 film formed on the work 10 to move the particles to the sparse portion of the film and flatten the film surface.
  • the film forming process is performed by the work 10 passing through the processing space 41 of the film forming processing section 40a in operation, and the processing space 59 of the film processing section 50 in operation is performed.
  • the work 10 passes through the work 10 to perform the oxidation treatment.
  • the work 10 passes through the space in the tubular electrode 61 of the operating ion irradiation unit 60, so that the SiO 2 film formed on the work 10 is flattened.
  • "operating” is synonymous with the fact that a plasma generation operation for generating plasma is performed in the processing spaces of the respective parts 40a, 50, and 60.
  • the operation of the film processing unit 50 may be started before the work 10 on which the first film formation is performed in the film processing unit 40a reaches the film processing unit 50. Further, the operation of the ion irradiation unit 60 may be started by the time the work 10 subjected to the oxidation treatment in the film treatment unit 50 reaches the ion irradiation unit 60.
  • the rotary table 31 continues to rotate until a SiO 2 film having a predetermined thickness is formed on the work 10, that is, until a predetermined time obtained in advance by simulation or experiment elapses (NO in step S07). ..
  • the work 10 continues to circulate in order through the film forming processing section 40a, the film processing section 50, and the ion irradiation section 60 by the transport section 30, and is placed on the work 10.
  • a film formation process for depositing silicon particles step S04
  • an oxidation process for oxidizing the deposited silicon particles step S05
  • a flattening process for flattening the produced SiO 2 film by ion irradiation step S06. And are repeated in sequence.
  • step S08 the operation of the film forming processing unit 40a is stopped (step S08). Specifically, the introduction of the sputtering gas G1 by the sputtering gas introduction unit 49 is stopped, and the voltage application to the target 42 by the power supply unit 46 is stopped.
  • the film formation processing section 40a is stopped, the operations of the film treatment section 50 and the ion irradiation section 60 are also stopped, and the work 10 in which the first film formation is performed in the film formation processing section 40b where the film formation is performed next. The operation may be restarted before reaching the film processing unit 50 and the ion irradiation unit 60.
  • the film processing unit 50 and the ion irradiation unit 60 may not be stopped. In this case, the film processing unit 50 and the ion irradiation unit 60 are in operation until the film formation processing unit 40a and the film formation processing unit 40b are stopped.
  • the film forming processing unit 40b starts operation to form a niobium film on the flattened SiO 2 film (step S09). That is, the sputter gas introduction unit 49 supplies the sputter gas G1 through the gas introduction port 47.
  • the sputter gas G1 is supplied around the target 42 made of niobium material.
  • the power supply unit 46 applies a voltage to the target 42. As a result, the sputtering gas G1 is turned into plasma.
  • the ions generated by the plasma collide with the target 42 and knock out niobium particles. Niobium particles are deposited on the surface of the work 10 that passes through the film forming processing section 40b each time the work 10 is passed, and a niobium film is formed.
  • step S10 The work 10 on which the niobium film is formed by rotating the rotary table 31 passes through the film forming processing section 40b toward the film processing section 50, and the niobium film is oxidized by the film processing section 50 (step S10). That is, as in step S05, the process gas introduction unit 58 supplies the process gas G2 containing oxygen gas to the processing space 59, and the RF power supply 54 applies a high frequency voltage to the antenna 53 to generate plasma in the processing space 59. generate. Oxygen ions generated by this plasma collide with the niobium film formed on the work 10 to bond with the niobium, and the niobium film on the work 10 is converted into an Nb 2 O 5 film.
  • Step S11 The work 10 on which the Nb 2 O 5 film is formed by passing through the film processing section 50 by the rotation of the rotary table 31 heads toward the ion irradiation section 60, and the ion irradiation section 60 irradiates the Nb 2 O 5 film with ions.
  • the process gas introduction unit 65 supplies the process gas G3 containing argon gas to the processing space surrounded by the tubular electrode 61 and the rotary table 31, and the RF power supply 66 supplies the tubular electrode 61.
  • the process gas G3 supplied to the processing space is excited to generate plasma.
  • the argon ions generated by the plasma collide with the Nb 2 O 5 film formed on the work 10 to move the particles to the sparse portion of the film and flatten the film surface.
  • the rotary table 31 rotates until a Nb 2 O 5 film having a predetermined thickness is formed on the work 10, that is, until a predetermined time obtained in advance by simulation or experiment elapses (NO in step S12). continue.
  • the work 10 continues to circulate through the film forming processing section 40b, the film processing section 50, and the ion irradiation section 60 in order by the transport section 30, and the work 10
  • a film formation process for depositing niobium particles on top step S09
  • an oxidation process for oxidizing the deposited niobium particles step S10
  • a flattening process for flattening the generated Nb 2 O 5 film by ion irradiation.
  • step S12 When the predetermined time has elapsed (YES in step S12), the operation of the film forming processing unit 40b is stopped (step S13). Specifically, the introduction of the sputtering gas G1 by the sputtering gas introduction unit 49 is stopped, and the voltage application to the target 42 by the power supply unit 46 is stopped.
  • the SiO 2 film 11 and the Nb 2 O 5 film 12 are alternately placed on the work 10 by repeating steps S04 to S13 until each film reaches a predetermined number, for example, as shown in FIG. Laminate.
  • step S15 the operations of the film formation processing section 40, the film treatment section 50, and the ion irradiation section 60 are stopped. That is, the introduction of the sputter gas G1, the introduction of the process gases G2 and G3, and the voltage application by the power supply unit 46 and the RF power supplies 54 and 66 are stopped. Then, the rotation of the rotary table 31 is stopped, and the tray 34 on which the work 10 is placed is discharged from the load lock portion 70 (step S16).
  • the film forming apparatus 100, the conveyance unit 30, the workpiece 10 is the film deposition unit 40, film processor 50, since the circulation transports the workpiece 10 to pass through the ion irradiation unit 60, SiO 2
  • the ion irradiation unit 60 irradiates the film in the process of formation with ions to alleviate the unevenness of the film, so that a flat film can be laminated. it can.
  • the film forming apparatus 100 of the present embodiment is a film forming apparatus for forming a film on the work 10, and is composed of a conveying unit 30 having a rotary table 31 for circulating and conveying the work 10 and a material constituting the film.
  • a film formation having a target 42 and a plasma generator that turns the sputter gas introduced between the target 42 and the rotary table 31 into plasma, and sputtering the target 42 with plasma to form a film on the work 10.
  • a processing unit 40 and an ion irradiation unit 60 for irradiating ions are provided, and the transport unit 30 transports the work 10 so as to pass through the film formation processing unit 40 and the ion irradiation unit 60 during the formation of the film.
  • the ion irradiation unit 60 irradiates the film in the process of formation on the work 10 with ions.
  • the work 10 is conveyed by the conveying unit 30 so as to pass through the film forming processing unit 40 and the ion irradiation unit 60 during the film formation, and the ion irradiation unit 60 conveys the work 10 onto the work 10. Since the film being formed is irradiated with ions, the film can be flattened without heating the work 10, the apparatus configuration can be prevented from becoming complicated, and energy saving can be achieved.
  • the present embodiment is a film forming apparatus 100 for forming a film on the work 10, a chamber 20 having a vacuum inside, and a transport path provided in the chamber for the work 10 to be circumferentially conveyed.
  • a transport unit 30 having a rotary table 31 for circulating transport in the above, a target 42 made of a material constituting a film, and a plasma generator for converting sputter gas G1 introduced between the target 42 and the rotary table 31 into plasma.
  • a film-forming processing unit 40 that has a target 42 sputtered by plasma to form a film on the work 10, a tubular body 51 that projects into the internal space of the chamber 20 and opens toward a transport path, and a tubular body.
  • First process gas introduction to introduce the first process gas (process gas G2) into the processing space 59 formed between the window member 52 provided so as to close the opening of the rotary table 31 and the tubular body 51.
  • a first unit processing gas introduction unit 58
  • an antenna 53 that generates an electric field in the processing space 59 via the window member 52
  • a power supply RF power supply 54
  • the chamber 20 is provided with a film processing section 50 that turns the process gas G2 into plasma to generate inductively coupled plasma in the processing space 59 and chemically reacts the film, and an opening 61a at one end so that the opening 61a faces the transport path.
  • the second process gas introduction section for introducing the second process gas (process gas G3) into the tubular electrode 61, and the tubular electrode 61. It has an RF power source 66 for applying a high-frequency voltage, and includes an ion irradiation unit 60 for irradiating the film with ions generated by plasmaizing the second process gas G3, and the transport unit 30 is a film forming processing unit 40.
  • the work 10 was circulated and conveyed so as to pass through the film processing unit 50 and the ion irradiation unit 60, and the ion irradiation unit 60 irradiated the film in the process of formation on the work 10 with ions.
  • the film formed by the film forming process section 40 can be chemically reacted by the film processing section 50 and flattened by the ion irradiation section 60.
  • the ion irradiation unit 60 includes a second process gas introduction unit that introduces the second process gas G3, a tubular electrode 61 that is provided with an opening 61a at one end and the second process gas G3 is introduced inside.
  • RF power supply 66 RF power supply 66
  • a negative bias voltage can be easily applied even to the work 10 that moves by circulation transfer.
  • ions can be drawn into the work 10 and the film on the work 10 can be efficiently flattened.
  • the film processing unit 50 the film on the work 10 can be efficiently converted into a compound film by inductively coupled plasma having a plasma density higher than that of the plasma generated by the ion irradiation unit 60.
  • the film processing section 50 and the ion irradiation section 60 are separated as separate components, and the film forming section 40, the film processing section 50, and the ion irradiation section 60 are separated.
  • the work 10 By circulating and transporting the work 10 through the work 10, it is possible to repeatedly perform the processes of film formation at the atomic level, conversion to a compound film, and flattening on the work 10.
  • a film having high flatness and high oxidation efficiency can be laminated, and an optical film having high optical characteristics can be formed.
  • the transport unit 30 transports the work 10 so as to alternately pass through the film formation processing unit 40 and the ion irradiation unit 60. As a result, a film is further formed on the flattened film to form a film having a predetermined thickness, so that a flatter film can be formed.
  • a film processing unit 50 having a process gas introduction unit 58 for introducing the process gas G2 and a plasma generator for converting the process gas into plasma, and chemically reacting the film formed by the film forming processing unit 40 is provided.
  • the transport unit 30 is configured to transport the work 10 so as to pass through the ion irradiation unit 60 after passing through the film processing unit 50. As a result, the compound film formed on the work 10 can be flattened.
  • the process gas G2 is made to contain oxygen or nitrogen. As a result, the film deposited on the work 10 can be oxidized or nitrided.
  • the pressure of the sputtering gas in the film forming processing unit 40 was set to 0.3 Pa or less.
  • the decrease in kinetic energy of the target constituent particles due to the collision of the target constituent particles ejected from the target 42 with the constituent particles such as atoms and ions in the sputtering gas becomes small, so that the target constituent particles are relatively small.
  • the target constituent particles are accommodated in the recessed portion of the film, and the film is formed. Can be flattened.
  • the film forming apparatus 100 of the present embodiment includes a plurality of film forming processing sections 40, and the plurality of film forming processing sections 40 are formed by alternately laminating films having different compositions on the work 10. did. As a result, it is possible to obtain an optical device having an optical film having good optical characteristics in which diffused reflection of light on the film surface is suppressed.
  • the ion irradiation unit 60 has a process gas introduction unit 65 for introducing the process gas (second process gas) G3 and a plasma generator for converting the process gas G3 into plasma, and is generated by the plasma generator.
  • the membrane was irradiated with ions in the plasma.
  • the process gas G3 was made to contain argon.
  • argon ions having a large atomic size collide with the film, which is a collection of particles deposited on the work 10, to break the convex part of the film, which is a dense part of the particles, and the broken particles are made into a sparse part. It becomes easy to fit in the concave portion of the film, and the film can be easily flattened.
  • Process gas (second process gas) G3 contains oxygen or nitrogen, or argon and oxygen or nitrogen.
  • the reaction can be supplemented by chemically reacting the oxygen ion or nitrogen ion with the film in the ion irradiation unit 60 to oxidize or nitrid. ..
  • oxygen ions or oxygen ions or oxygen ions are generated in the ion irradiation unit 60 that passes next.
  • the reaction can be supplemented by the chemical reaction between the nitrogen ions and the film to oxidize or nitride.
  • the process gas (second process gas) G3 contains argon, oxygen atoms and nitrogen atoms are separated from the oxidized or nitrided film due to the collision of argon ions, and the oxidation or nitrided of the film is insufficient. There may be situations. Even in that case, the reaction can be supplemented by chemically reacting the oxygen ion or nitrogen ion with the film again to oxidize or nitrid.
  • the work 10 passes through the film processing unit 50 before the ion irradiation unit 60, even if oxidation or nitriding is performed in the film processing unit 50, it is oxidized or oxidized by the collision of argon ions in the ion irradiation unit 60.
  • the nitriding oxygen atom and nitrogen atom may separate, resulting in insufficient oxidation or nitriding.
  • the reaction can be supplemented by chemically reacting oxygen ions or nitrogen ions with the film again to oxidize or nitrid.
  • Example 1 A cold mirror formed by alternately forming a total of 22 laminated films of SiO 2 film and Nb 2 O 5 film on the work 10 under the conditions shown in Table 1 by the film forming apparatus 100 of the present embodiment. Made.
  • the numerical range of "target applied power (W)" in the “deposition processing unit” in Table 1 indicates the range of power supplied to each of the three targets 42.
  • the cold mirror of Example 1 was produced by oxidizing the film of each layer by the film processing unit 50 and then irradiating the film with ions by the ion irradiation unit 60.
  • the cold mirror of Example 2 was produced under the same conditions as in Example 1 except that the supply flow rate of the sputtering gas G1 to the film forming processing unit 40 was set to 50 sccm and was reduced from the case of Example 1. In other words, the pressure of the sputtering gas in the film forming processing unit 40 is 0.5 Pa in Example 1 and 0.3 Pa in Example 2.
  • the cold mirror of Comparative Example 1 was produced without performing ion irradiation by the ion irradiation unit 60 as compared with Example 1.
  • 6A and 6B are cross-sectional images of Examples 1 and 2 and Comparative Example 1 taken by a transmission electron microscope (TEM), in which (a) is Example 1, (b) is Example 2, and (c) is Comparative Example. It is a cross-sectional image of 1.
  • 7A and 7B are enlarged cross-sectional images of the surface layer 8 layer portion of Examples 1 and 2 and Comparative Example 1 in FIG. 6, where (a) is Example 1, (b) is Example 2, and (c) is Comparative Example. It is a cross-sectional image of 1.
  • FIG. 8 is a graph showing the maximum height Rz of each layer of Examples 1, 2 and Comparative Example 1.
  • FIG. 9 is a graph showing the standard deviation of the maximum height Rz of each layer of Examples 1, 2 and Comparative Example 1.
  • the "maximum height" in FIGS. 8 and 9 is the height of the protruding portion closest to the surface of the work 10 with reference to the portion closest to the work 10 in each layer.
  • Example 1 the film of each layer is flatter than that of Comparative Example 1. Can be seen. Further, as shown in FIGS. 8 and 9, in Example 1, the average of the maximum height Rz of each layer is 38% smaller than that of Comparative Example 1, and the average of the standard deviations of each layer is 40% smaller. From this, it can be seen that the film of each layer is flat. As described above, the difference between Example 1 and Comparative Example 1 is the difference depending on the presence or absence of ion irradiation on the membrane. Therefore, as shown in FIGS. 6 to 9, the difference between the visual aspect and the numerical aspect is due to the ion irradiation. The effect of flattening the film can be confirmed.
  • Example 2 the film of each layer became flatter than that in Example 1. You can see that it is. Further, as shown in FIGS. 8 and 9, in Example 2, the average of the maximum height Rz of each layer is 56% smaller than that of Example 1, and the average of the standard deviations of each layer is 63% smaller. From this, it can be seen that the film of each layer is flat. As described above, the difference between the second embodiment and the first embodiment is the difference in the flow rate of the sputtering gas supplied to the film forming processing unit 40, that is, the difference in the pressure of the sputtering gas. Therefore, as shown in FIGS. 6 to 9. In addition, it is possible to confirm the effect of further flattening the film by lowering the film forming atmosphere from both the visual aspect and the numerical aspect.
  • Examples 1 and 2 and Comparative Example 1 have a laminated film having 22 layers, in FIGS. 8 and 9, paying attention to the maximum height Rz and standard deviation of the first layer, Examples 1 and 2. Since both the maximum height Rz and the standard deviation of No. 2 are smaller than those of Comparative Example 1, not only the formation of the laminated film but also the formation of the monolayer film is the flattening of the film by ion irradiation. It can be confirmed that the effect is obtained.
  • the present invention is not limited to the above embodiments, but also includes other embodiments shown below.
  • the present invention also includes a combination of all or any of the above embodiments and the following other embodiments.
  • various omissions, replacements, and changes can be made to these embodiments without departing from the scope of the invention, and modifications thereof are also included in the present invention.
  • the rotary table 31 is rotated counterclockwise in a plan view, but the film is formed again by the film forming processing unit 40. If the film being formed is irradiated with ions by the ion irradiation unit 60 before the film is formed by the processing unit 40, the film may be rotated clockwise. That is, the transport unit 30 may be configured to enable circulation transport in two directions, and the membrane treatment unit 50 and the ion irradiation unit 60 may be provided adjacent to each other. This makes it possible to switch the order of the chemical reaction by the membrane processing unit 50 and the film flattening treatment by the ion irradiation unit 60.
  • the work 10 is circulated and transported in the order of the film forming processing unit 40, the film processing unit 50, and the ion irradiation unit 60 by the conveying unit 30, but the same rotation direction (counterclockwise) as in the above embodiment.
  • the order of arrangement of the film processing unit 50 and the ion irradiation unit 60 may be reversed, and the film formation processing unit 40, the ion irradiation unit 60, and the film treatment unit 50 may be circulated and transported in this order.
  • the membrane after the chemical reaction by the membrane treatment unit 50 can be irradiated with ions to flatten the membrane.
  • the oxygen atom or nitrogen atom separated from the compound film by ion irradiation in the ion irradiation unit 60 is contained in the processing space 59 of the film processing unit 50 with oxygen gas or nitrogen gas, so that the film passes next. It can be supplemented by the processing unit 50.
  • the transport unit 30 has a rotary table 31, but instead of the rotary table 31, an arm extending radially from the center of rotation may be used. In this case, the arm holds the tray 34 and the work 10 and rotates.
  • the film formation processing section 40, the film treatment section 50, and the ion irradiation section 60 are located on the bottom side of the chamber 20, and the vertical relationship between the film formation treatment section 40, the film treatment section 50, the ion irradiation section 60, and the rotary table 31. May be reversed.
  • the surface of the rotary table 31 on which the tray 34 is arranged is a surface facing downward when the rotary table 31 is in the horizontal direction, that is, a lower surface.
  • the installation surface of the film forming apparatus 100 may be a floor surface, a ceiling surface, or a side wall surface.
  • the tray 34 is provided on the upper surface of the rotary table 31 arranged horizontally, and the rotary table 31 is rotated in a horizontal plane, and the film forming processing unit 40, the film processing unit 50, and ions are formed above the rotary table 31.
  • the irradiation unit 60 is arranged, the present invention is not limited to this.
  • the arrangement of the rotary table 31 is not limited to horizontal, and may be vertical or inclined.
  • the tray 34 may be provided on opposite surfaces (both sides) of the rotary table 31.
  • the direction of the rotation plane of the transport unit 30 may be any direction, and the position of the tray 34, the film formation processing unit 40, the film processing unit 50, and the ion irradiation unit 60 are located on the tray.
  • the work 10 held in the 34 may be at a position that can be processed by the film forming processing unit 40, the film processing unit 50, and the ion irradiation unit 60.

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  • Plasma Technology (AREA)

Abstract

L'invention concerne un appareil de formation de film qui est apte à former un film plat dans lequel la détérioration de caractéristiques optiques est réduite au minimum. Cet appareil de formation de film est destiné à former des films sur des pièces (10), et comporte : une partie de transfert (30) doté d'une table rotative (31) pour transférer de manière circulaire les pièces (10) ; une partie de traitement de formation de film (40) qui possède une cible (42) comprenant un matériau de formation de film et un générateur de plasma destiné à transformer un gaz de pulvérisation introduit entre la cible (42) et la table rotative (31) en plasma et qui forme des films sur les pièces (10) en soumettant la cible (42) à un traitement de pulvérisation cathodique à l'aide d'un plasma ; et une partie d'émission d'ions (60) destinée à émettre des ions, la partie de transfert (30) transférant de manière circulaire les pièces (10) de manière à amener les pièces (10) à passer à travers la partie de formation de film (40) et la partie d'émission d'ions (60), la partie d'émission d'ions (60) émettant des ions sur les films qui sont formés sur les pièces (10).
PCT/JP2020/021712 2019-06-06 2020-06-02 Appareil de formation de film Ceased WO2020246449A1 (fr)

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WO2023162503A1 (fr) * 2022-02-22 2023-08-31 芝浦機械株式会社 Dispositif de traitement de surface

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005290432A (ja) * 2004-03-31 2005-10-20 Shincron:Kk スパッタ装置及び薄膜形成方法
JP2017120781A (ja) * 2015-12-28 2017-07-06 芝浦メカトロニクス株式会社 プラズマ処理装置

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US10026847B2 (en) * 2011-11-18 2018-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
JP6533511B2 (ja) * 2015-06-17 2019-06-19 株式会社シンクロン 成膜方法及び成膜装置
JP6859162B2 (ja) * 2017-03-31 2021-04-14 芝浦メカトロニクス株式会社 プラズマ処理装置
JP7039234B2 (ja) * 2017-09-29 2022-03-22 芝浦メカトロニクス株式会社 成膜装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005290432A (ja) * 2004-03-31 2005-10-20 Shincron:Kk スパッタ装置及び薄膜形成方法
JP2017120781A (ja) * 2015-12-28 2017-07-06 芝浦メカトロニクス株式会社 プラズマ処理装置

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CN113924384A (zh) 2022-01-11
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JP7469303B2 (ja) 2024-04-16
TW202113105A (zh) 2021-04-01

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