TWI392755B - Sputtering method and sputtering device - Google Patents
Sputtering method and sputtering device Download PDFInfo
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- TWI392755B TWI392755B TW096101141A TW96101141A TWI392755B TW I392755 B TWI392755 B TW I392755B TW 096101141 A TW096101141 A TW 096101141A TW 96101141 A TW96101141 A TW 96101141A TW I392755 B TWI392755 B TW I392755B
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- 238000004544 sputter deposition Methods 0.000 title claims description 48
- 238000010891 electric arc Methods 0.000 claims description 67
- 238000001514 detection method Methods 0.000 claims description 56
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 15
- 230000010355 oscillation Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
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- Engineering & Computer Science (AREA)
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Description
本發明是有關可對處理基板表面成膜之濺射方法及濺射裝置。The present invention relates to a sputtering method and a sputtering apparatus which can form a film on a surface of a substrate to be processed.
就濺射法而言,是使電漿環境中的離子對應於所欲成膜於處理基板表面的薄膜的組成來往製作成所定形狀的靶加速衝撃,使靶原子飛散,在處理基板表面形成薄膜。此情況,是經由直流電源或交流電源來施加電壓至陰極電極的靶,藉此輝光放電產生於陰極電極與陽極電極或接地電極之間,而形成電漿環境。In the sputtering method, the ions in the plasma environment are made to correspond to the composition of the film to be formed on the surface of the substrate to be accelerated, and the target atoms are accelerated to scatter, and the target atoms are scattered to form a film on the surface of the substrate. . In this case, a target is applied to the cathode electrode via a direct current power source or an alternating current power source, whereby a glow discharge is generated between the cathode electrode and the anode electrode or the ground electrode to form a plasma environment.
在如此的輝光放電中,基於某些原因,會發生電弧放電,若此電弧放電在陰極電極中局部發生,則會誘發粒子或飛濺等的問題,無法良好的成膜。In such a glow discharge, arc discharge occurs for some reason, and if the arc discharge occurs locally in the cathode electrode, problems such as particles or splashes are induced, and film formation cannot be performed satisfactorily.
因應於此,例如有使用直流電源的濺射法,其係檢測出陰極電極與接地電極之間的電壓,若該電壓的降下量變大超過所定值,則會檢測出電弧放電發生,在電弧放電發生後所定時間內從直流電源遮斷電力供給(專利文獻1)In response to this, for example, there is a sputtering method using a DC power source, which detects a voltage between a cathode electrode and a ground electrode, and if the amount of the voltage drop exceeds a predetermined value, an arc discharge is detected, and an arc discharge is detected. The power supply is interrupted from the DC power supply within a certain period of time after the occurrence (Patent Document 1)
〔專利文獻1〕特開平11-200036號公報(例如參照請求項1)。[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 11-200036 (for example, refer to claim 1).
但,使用交流電源的濺射,亦即經由交流電源以所定的頻率交替地改變極性來對彼此浮動配置於真空反應室(chamber)內的一對靶施加電壓,將各靶交替切換成陽極電極、陰極電極來濺射者,是施加於各靶的電壓的極性會常時變化,且電壓降下也會毎次發生,因此難以適用根據上述陰極電極、陽極電極間的電壓降下的檢出之電弧檢測法。However, by sputtering using an alternating current power source, that is, alternately changing the polarity at a predetermined frequency via an alternating current power source, voltages are applied to a pair of targets floating in each other in a vacuum reaction chamber, and each target is alternately switched to an anode electrode. When the cathode electrode is sputtered, the polarity of the voltage applied to each target changes constantly, and the voltage drop occurs in succession. Therefore, it is difficult to apply the detected arc detection based on the voltage drop between the cathode electrode and the anode electrode. law.
此情況,以往是求取從交流電源往靶之輸出電壓的實效值或平均值,而將此輸出電壓直流化,根據此直流電壓來進行電弧檢測,但由於須加上用以使交流電壓變化成直流電壓的時間,因此電弧放電發生的檢出會產生延遲,有無法有效地防止粒子或飛濺的發生等問題。In this case, in the past, the actual value or average value of the output voltage from the AC power source to the target was obtained, and the output voltage was DC-formed, and the arc voltage was detected based on the DC voltage, but it was added to change the AC voltage. Since the time of the DC voltage is generated, the occurrence of the arc discharge is delayed, and there is a problem that the occurrence of particles or splash cannot be effectively prevented.
於是,有鑑於上述問題點,本發明的課題是在於提供一種在藉由使用交流電源的濺射來成膜時,可迅速地檢測出電弧放電發生,來遮斷往靶的輸出,縮小電弧放電發生時的能量,而使能夠有效地防止粒子或飛濺的發生等之濺射方法及濺射裝置。Therefore, in view of the above problems, an object of the present invention is to provide a method for rapidly detecting the occurrence of arc discharge when forming a film by sputtering using an alternating current power source, thereby blocking the output to the target and reducing the arc discharge. A sputtering method and a sputtering apparatus that can effectively prevent the occurrence of particles or splashes, etc., at the time of occurrence of energy.
為了解決上述課題,請求項1記載的濺射方法,係經由交流電源以所定的頻率交替地改變極性來對設置於真空反應室內的一對靶施加電壓,將各靶交替地切換成陽極電極、陰極電極,使輝光放電產生於陽極電極及陰極電極間,而形成電漿環境來濺射各靶之濺射方法,其特徵為:檢測出往上述一對的靶之輸出電壓波形,當判斷此輸出電壓波形的電壓降下時間比正常的輝光放電時更短時間時,遮斷來自上述交流電源的輸出。In order to solve the above problem, the sputtering method according to claim 1 is characterized in that a voltage is alternately changed at a predetermined frequency via an alternating current power source, and a voltage is applied to a pair of targets provided in the vacuum reaction chamber, and each target is alternately switched to an anode electrode. The cathode electrode is a sputtering method in which a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma environment to sputter each target, and the output voltage waveform of the pair of targets is detected. When the voltage drop time of the output voltage waveform is shorter than that of the normal glow discharge, the output from the above AC power source is blocked.
根據本發明,若經由交流電源來對一對的靶施加電壓,則各靶會交替切換成陽極電極、陰極電極,在陽極電極及陰極電極間產生輝光放電而形成電漿環境,電漿環境中的離子會往陰極電極的靶加速衝撃,使靶原子飛散,在處理基板表面形成薄膜。According to the present invention, when a voltage is applied to a pair of targets via an alternating current power source, each target is alternately switched between an anode electrode and a cathode electrode, and a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma environment, and in a plasma environment. The ions will accelerate toward the target of the cathode electrode, causing the target atoms to scatter and form a thin film on the surface of the treated substrate.
若在濺射中發生電弧放電,則電漿的阻抗會急速變小,首先靶彼此間的電壓會變小,隨之大的電流會流動。此情況,因為是由往靶之輸出電壓波形的電壓降下時間的長短來直接檢測出電弧放電的發生,所以與求取靶彼此間的電流值的變化或往靶之輸出電壓的實效值或平均值而來檢測出電弧放電者相較之下,可迅速地檢測出電弧放電發生,而遮斷往靶的輸出。其結果,可縮小電弧放電發生時的能量來有效地防止粒子或飛濺的發生等。When an arc discharge occurs during sputtering, the impedance of the plasma is rapidly reduced. First, the voltage between the targets becomes small, and a large current flows. In this case, since the occurrence of the arc discharge is directly detected by the length of the voltage drop of the output voltage waveform of the target, the change in the current value between the targets or the effective value or average of the output voltage to the target is obtained. In contrast to the case where the arc discharge is detected, the arc discharge can be quickly detected and the output to the target can be blocked. As a result, the energy at the time of occurrence of the arc discharge can be reduced to effectively prevent the occurrence of particles or splashes.
此情況,檢測出上述一對的靶彼此間的輸出電流波形,若該輸出電流波形的絕對值超過所定值,則視為上述輝光放電發生,由此輸出電流波形的絕對值來製作電流閘極信號,且由上述輸出電壓波形的絕對值來製作電壓脈衝信號,若在此電流閘極信號的開啟狀態中電壓脈衝信號形成關閉狀態,則可判斷上述輸出電壓波形的電壓降下時間比正常的輝光放電時更短時間。In this case, the output current waveform between the pair of targets is detected, and if the absolute value of the output current waveform exceeds a predetermined value, the glow discharge is generated, and the absolute value of the current waveform is output to create a current gate. a signal, and the voltage pulse signal is generated by the absolute value of the output voltage waveform. If the voltage pulse signal is turned off in the open state of the current gate signal, the voltage drop time of the output voltage waveform can be determined to be longer than the normal glow. Shorter time when discharging.
藉此,因為是在電流流動於靶彼此間時檢測出電壓降下的發生,所以例如可減少電弧放電的誤檢測。Thereby, since the occurrence of the voltage drop is detected when the current flows between the targets, for example, erroneous detection of the arc discharge can be reduced.
為了更精度佳地檢測出電弧放電發生,最好在上述濺射中,以往上述靶之輸出電流波形、輸出電壓波形的相位能夠大略一致之方式來進行控制。In order to detect the occurrence of arc discharge with higher accuracy, it is preferable to control the phase of the output current waveform and the output voltage waveform of the conventional target in the above sputtering.
此情況,最好使上述所定值對應於從交流電源往一對的靶之投入電力來變化。In this case, it is preferable that the predetermined value is changed in accordance with the input power from the AC power source to the pair of targets.
又,由上述輸出電壓波形的絕對值來製作電壓脈衝信號,且檢測出該電壓脈衝信號的脈衝寬,當該脈衝寬比所定值小時,可判斷上述輸出電壓波形的電壓降下時間比正常的輝光放電時更短時間。Further, the voltage pulse signal is generated from the absolute value of the output voltage waveform, and the pulse width of the voltage pulse signal is detected. When the pulse width ratio is smaller than the predetermined value, the voltage drop time of the output voltage waveform can be determined to be longer than the normal glow. Shorter time when discharging.
藉此,僅以靶彼此間的電壓來檢測出電弧放電發生,所以不必考慮輸出電壓波形與輸出電流波形的相位偏移,即使起動時等輸出電壓波形與輸出電流波形的相位不一致時還是可以檢測出電弧放電發生。Thereby, the occurrence of arc discharge is detected only by the voltage between the targets, so that it is not necessary to consider the phase shift between the output voltage waveform and the output current waveform, and it is possible to detect even if the output voltage waveform and the phase of the output current waveform are not coincident at the start. An arc discharge occurs.
此情況,可由輸出電壓波形的絕對值來直接決定上述所定值,或預先測定不發生電弧放電時的脈衝寬而相對性地決定上述所定值。In this case, the predetermined value can be directly determined by the absolute value of the output voltage waveform, or the pulse width at the time of arc discharge is not measured in advance, and the predetermined value can be relatively determined.
又,檢測出與上述輸出電壓波形的電壓降下成比例的微分波形,當此微分波形超過所定值而變大時,可判斷上述輸出電壓波形的電壓降下時間比正常的輝光放電時更短時間。Further, a differential waveform proportional to the voltage drop of the output voltage waveform is detected, and when the differential waveform exceeds a predetermined value, the voltage drop time of the output voltage waveform can be determined to be shorter than the normal glow discharge time.
藉此,可用簡單的電路構成來實現電弧放電檢出電路,且僅以靶彼此間的電壓來檢測出電弧放電發生,所以不必考慮輸出電壓波形與輸出電流波形的相位偏移,即使起動時等輸出電壓波形與輸出電流波形的相位不一致時還是可以檢測出電弧放電發生。Thereby, the arc discharge detecting circuit can be realized by a simple circuit configuration, and the arc discharge is detected only by the voltage between the targets, so that it is not necessary to consider the phase shift of the output voltage waveform and the output current waveform, even when starting, etc. When the output voltage waveform does not coincide with the phase of the output current waveform, arc discharge can be detected.
此情況,為了更精度佳地檢測出電弧放電發生,最好是在檢測出上述微分波形之前,經由濾波器電路來除去輸出電壓波形的雜訊。In this case, in order to detect the occurrence of the arc discharge with higher accuracy, it is preferable to remove the noise of the output voltage waveform via the filter circuit before detecting the differential waveform.
另外,最好上述輸出電壓波形大略為正弦波。Further, it is preferable that the output voltage waveform is substantially a sine wave.
又,檢測出上述一對的靶彼此間的輸出電流波形,以上述輸出電壓波形與輸出電流波形的相位及振幅能夠大略一致之方式來調節之後,檢測出該等的波形的差分波形,當該差分波形超過所定值而變大時,可判斷上述輸出電壓波形的電壓降下時間比正常的輝光放電時更短時間。Further, the output current waveform between the pair of targets is detected, and the output voltage waveform is adjusted so as to substantially match the phase and amplitude of the output current waveform, and then the difference waveform of the waveforms is detected. When the differential waveform becomes larger than the predetermined value, it can be judged that the voltage drop time of the output voltage waveform is shorter than that of the normal glow discharge.
藉此,使用於電弧檢出時的波形是由適當調節後的電流波形與電壓波形的差分所合成者,當電弧放電發生時,該差分波形的輸出會形成更大的輸出波形,因此不易受到雜訊的影響,其結果可減少誤檢出。Therefore, the waveform used in the arc detection is synthesized by the difference between the appropriately adjusted current waveform and the voltage waveform. When the arc discharge occurs, the output of the differential waveform forms a larger output waveform, and thus is less susceptible to The effect of noise can reduce false detections.
此情況,為了更精度佳地檢測出電弧放電發生,最好是在檢測出上述微分波形之前,經由濾波器電路來除去輸出電壓波形及輸出電流波形的雜訊。In this case, in order to detect the occurrence of the arc discharge with higher accuracy, it is preferable to remove the noise of the output voltage waveform and the output current waveform through the filter circuit before detecting the differential waveform.
另外,最好上述輸出電壓波形及輸出電流波形大略為正弦波。Further, it is preferable that the output voltage waveform and the output current waveform are substantially sinusoidal.
又,為了解決上述課題,請求項13記載之濺射裝置的特徵係設置:電弧檢出手段,其係具備:設置於真空反應室內之一對的靶、及以所定的頻率交替地改變極性來對該一對的靶間施加電壓之交流電源,檢測出往上述靶之輸出電壓波形的電壓降下時間比正常的輝光放電時更短時間之電壓降下;及遮斷手段,其係以來自電弧檢出電路的輸出遮斷來自交流電源的輸出。Moreover, in order to solve the above-described problems, the sputtering apparatus according to claim 13 is characterized in that the arc detecting means includes a target that is disposed in one of the vacuum reaction chambers and alternately changes polarity at a predetermined frequency. An alternating current power source for applying a voltage between the pair of targets detects a voltage drop of a voltage drop time to the output voltage waveform of the target is shorter than a normal glow discharge; and a blocking means is performed from the arc detection The output of the output circuit blocks the output from the AC power source.
此情況,亦可對上述交流電源設置使往一對的靶之輸出電壓波形及輸出電流波形的相位大略一致之相位調節手段。In this case, the AC power supply may be provided with a phase adjustment means for substantially matching the phase of the output voltage waveform and the output current waveform of the pair of targets.
又,上述電弧檢出手段係由:第1絕對值檢出電路及第2絕對值檢出電路,其係檢測出上述一對的靶彼此間的輸出電流波形及輸出電壓波形的絕對值;電流閘極信號產生電路及電壓脈衝信號產生電路,其係設置分別輸入來自第1絕對值檢出電路及第2絕對值檢出電路的絕對值及檢出位準的比較器;及電壓降下檢出電路,其係分別輸入來自電流閘極信號產生電路及電壓脈衝信號產生電路的電流閘極信號及電壓脈衝信號;所構成,若在該電流閘極信號的開啟狀態中電壓閘極信號形成關閉狀態,則會檢測出比正常的輝光放電時更短時間之電壓降下。Further, the arc detecting means includes: a first absolute value detecting circuit and a second absolute value detecting circuit that detect an output current waveform and an absolute value of an output voltage waveform between the pair of targets; a gate signal generating circuit and a voltage pulse signal generating circuit for respectively inputting a comparator for inputting an absolute value and a detected level from the first absolute value detecting circuit and the second absolute value detecting circuit; and detecting the voltage drop a circuit for inputting a current gate signal and a voltage pulse signal from the current gate signal generating circuit and the voltage pulse signal generating circuit; wherein the voltage gate signal is turned off when the current gate signal is turned on , a voltage drop that is shorter than the normal glow discharge is detected.
又,其他形態的電弧檢出手段係由:絕對值檢出電路,其係檢測出上述一對的靶彼此間的輸出電壓波形的絕對值;電壓脈衝產生電路,其係設置輸入來自該絕對值檢出電路的絕對值及檢出位準之比較器;及電壓降下檢出電路,其係輸入來自電壓脈衝產生電路的電壓脈衝信號;所構成,檢測出被輸入至電壓降下檢出電路的電壓脈衝信號的脈衝寬,當該脈衝寬比所定值小時,檢測出比正常的輝光放電時更短時間之電壓降下。Further, the arc detecting means of another form is an absolute value detecting circuit that detects an absolute value of an output voltage waveform between the pair of targets, and a voltage pulse generating circuit that sets an input from the absolute value. a comparator for detecting an absolute value of the circuit and a detection level; and a voltage drop detection circuit for inputting a voltage pulse signal from the voltage pulse generation circuit; configured to detect a voltage input to the voltage drop detection circuit The pulse width of the pulse signal, when the pulse width is smaller than the predetermined value, detects a voltage drop that is shorter than the normal glow discharge.
又,其他形態的電弧檢出手段係由:微分電路,其係檢測出與上述一對的靶彼此間的輸出電壓波形的電壓降下成比例的微分波形;絕對值檢出電路,其係檢測出來自該微分電路的電壓波形的絕對值;及電壓微分波形電路,其係具有輸入來自絕對值檢出電路的絕對值及檢出位準之比較器;所構成,當該微分波形的絕對值超過所定值而變大時,檢測出比正常的輝光放電時更短時間之電壓降下。Further, the arc detecting means of another aspect is a differential circuit that detects a differential waveform proportional to a voltage drop of an output voltage waveform between the pair of targets, and an absolute value detecting circuit that detects An absolute value of a voltage waveform from the differentiating circuit; and a voltage differential waveform circuit having a comparator that inputs an absolute value and a detected level from the absolute value detecting circuit; and when the absolute value of the differential waveform exceeds When the value is increased, a voltage drop is detected shorter than the normal glow discharge.
又,其他形態的電弧檢出手段係由:第1及第2增益調整電路,其係以上述一對的靶彼此間的輸出電壓波形及輸出電流波形的振幅能夠大略一致之方式來調節;差動放大器,其係檢測出來自各增益調整電路的輸出電壓波形及輸出電流波形的差分波形;絕對值檢出電路,其係檢測出來自該差動放大器的差動波形的絕對值;及差分波形檢出電路,其係具有輸入來自絕對值檢出電路的差動波形及檢出位準之比較器;所構成,當該差動波形的絕對值超過所定值而變大時,檢測出比正常的輝光放電時更短時間之電壓降下。Further, the arc detecting means of the other aspect is characterized in that the first and second gain adjusting circuits adjust the amplitude of the output voltage waveform and the output current waveform between the pair of targets to be substantially identical; a dynamic amplifier that detects a differential waveform of an output voltage waveform and an output current waveform from each gain adjustment circuit; an absolute value detection circuit that detects an absolute value of a differential waveform from the differential amplifier; and a differential waveform a detection circuit having a comparator for inputting a differential waveform and a detection level from an absolute value detection circuit; wherein when the absolute value of the differential waveform exceeds a predetermined value, the detection is larger than normal The glow of the glow is reduced in a shorter time.
如以上說明,本發明的濺射方法及濺射裝置,在藉由使用交流電源的濺射來成膜時,照樣可迅速地檢測出電弧放電發生,遮斷對靶的輸出,縮小電弧放電發生時的能量,而發揮能夠有效防止粒子或飛濺的發生等之效果。As described above, in the sputtering method and the sputtering apparatus of the present invention, when a film is formed by sputtering using an alternating current power source, the arc discharge can be quickly detected, the output to the target can be interrupted, and the arc discharge can be reduced. The energy at the time is effective to prevent the occurrence of particles or splashes.
參照圖1,元件符號1為本發明的磁控管濺射裝置(以下稱為「濺射裝置」)。濺射裝置1為內嵌(inline)式,具有經由迴轉式泵、渦輪分子泵等的真空排氣手段(未圖示)來保持於所定的真空度之真空反應室11。在真空反應室11的上部設有基板搬送手段。此基板搬送手段具有習知的構造,例如具有裝著處理基板S的載體2,使驅動手段間歇驅動,而來依序搬送處理基板S至對向於後述的靶的位置。Referring to Fig. 1, reference numeral 1 denotes a magnetron sputtering apparatus (hereinafter referred to as "sputtering apparatus") of the present invention. The sputtering apparatus 1 is of an inline type and has a vacuum reaction chamber 11 held at a predetermined degree of vacuum via a vacuum exhausting means (not shown) such as a rotary pump or a turbo molecular pump. A substrate transporting means is provided on the upper portion of the vacuum reaction chamber 11. This substrate transfer means has a conventional structure. For example, the carrier 2 having the processing substrate S is mounted, and the driving means is intermittently driven to sequentially transport the processed substrate S to a position facing the target to be described later.
在真空反應室11設有氣體導入手段3。氣體導入手段3是經由設置質量流控制器31的氣體管32來連通至氣體源33,Ar等的濺射氣體或反應性濺射時使用的O2 、H2 O、H2 、N2 等的反應氣體可以一定的流量來導入真空反應室11內。在真空反應室11的下側配置有陰極電極C。The gas introduction means 3 is provided in the vacuum reaction chamber 11. The gas introduction means 3 is connected to the gas source 33 via the gas pipe 32 in which the mass flow controller 31 is provided, a sputtering gas such as Ar, or O 2 , H 2 O, H 2 , N 2 or the like used for reactive sputtering. The reaction gas can be introduced into the vacuum reaction chamber 11 at a constant flow rate. A cathode electrode C is disposed on the lower side of the vacuum reaction chamber 11.
陰極電極C是具有對向於處理基板S而配置的一對靶41a、41b。各靶41a、41b是對應於Al、Ti、Mo或ITO等,所欲成膜於處理基板S上的薄膜的組成來以習知的方法製作,形成大略直方體(上面視長方形)。各靶41a、41b是在濺射中經由銦或錫等的接合材來接合冷卻靶41a、41b的背板42,經由未圖示的絕緣材來安裝於陰極電極C的框架,在真空反應室11內配置成浮動狀態。The cathode electrode C has a pair of targets 41a and 41b disposed opposite to the processing substrate S. Each of the targets 41a and 41b is formed by a conventional method in accordance with a composition of a film which is formed on the substrate S by Al, Ti, Mo, ITO or the like, and is formed into a substantially rectangular parallelepiped (a rectangular shape in the upper direction). Each of the targets 41a and 41b is a back plate 42 that bonds the cooling targets 41a and 41b via a bonding material such as indium or tin during sputtering, and is attached to the frame of the cathode electrode C via an insulating material (not shown) in the vacuum reaction chamber. 11 is configured to be in a floating state.
此情況,靶41a、41b是以其未使用時的濺射面411能夠位於與處理基板S平行的同一平面上之方式並設,各靶41a、41b之相向的側面412彼此間未設有任何陽極或屏蔽等的構成零件。各靶41a、41b的外形尺寸是設定成並設各靶41a、41b時並比處理基板S的外形尺寸更大。In this case, the targets 41a and 41b are disposed such that the sputtering surface 411 when not in use can be positioned on the same plane parallel to the processing substrate S, and the opposing side surfaces 412 of the respective targets 41a and 41b are not provided with any A component such as an anode or a shield. The outer dimensions of the respective targets 41a and 41b are set to be larger than the outer dimensions of the processing substrate S when the respective targets 41a and 41b are disposed in parallel.
並且,陰極電極C是位於各靶41a、41b的後方裝備磁石組合體5。磁石組合體5具有與各靶41a、41b平行設置的支撐板51。此支撐板51是比各靶41a、41b的橫寬更小,由形成沿著靶41a、41b的長度方向來延伸至其兩側之長方形狀的平板所構成,為放大磁石的吸附力之磁性材料製。在支撐板51上設有:沿著靶41a、41b的長度方向之棒狀的中央磁石52、及沿著支撐板51的外周而設置之周邊磁石53。此情況,設計成使換算成中央磁石52的同磁化時的體積相等於換算成周邊磁石53的同磁化時的體積的和(周邊磁石:中心磁石:周邊磁石=1:2:1)。Further, the cathode electrode C is provided with the magnet assembly 5 at the rear of each of the targets 41a and 41b. The magnet assembly 5 has a support plate 51 provided in parallel with each of the targets 41a and 41b. The support plate 51 is formed to have a smaller lateral width than each of the targets 41a and 41b, and is formed of a rectangular flat plate that extends to the both sides of the targets 41a and 41b so as to extend the magnetic force of the magnet. Material system. The support plate 51 is provided with a rod-shaped central magnet 52 along the longitudinal direction of the targets 41a and 41b, and a peripheral magnet 53 provided along the outer circumference of the support plate 51. In this case, the volume of the same magnetization converted into the central magnet 52 is equal to the sum of the volumes converted to the same magnetization of the peripheral magnet 53 (peripheral magnet: center magnet: peripheral magnet = 1:2:1).
藉此,在各靶41a、41b的前方分別形成平衡的閉迴路的隧道狀的磁束,捕捉在靶41a、41b的前方電離後的電子及藉由濺射所產生的二次電子,藉此可提高在靶41a、41b的各個前方的電子密度,而提高電漿密度。並且,可在一對的靶41a、41b分別連接來自交流電源E的輸出纜線K,以所定的頻率(1~400KHz)交替地改變極性來對一對的靶41a、41b施加電壓。Thereby, a balanced closed-circuit tunnel-shaped magnetic flux is formed in front of each of the targets 41a and 41b, and electrons ionized in front of the targets 41a and 41b and secondary electrons generated by sputtering are captured. The electron density in front of each of the targets 41a, 41b is increased to increase the plasma density. Further, an output cable K from the AC power supply E can be connected to each of the pair of targets 41a and 41b, and the polarity can be alternately changed at a predetermined frequency (1 to 400 KHz) to apply a voltage to the pair of targets 41a and 41b.
如圖2所示,交流電源E是由:可供給電力的電力供給部6、及以所定的頻率來交替改變極性而將電壓輸出至各靶41a、41b的振盪部7所構成。此情況,有關輸出電壓的波形,雖為大略正弦波,但並非限於此,例如亦可為大略方形波。As shown in FIG. 2, the AC power supply E is composed of a power supply unit 6 that can supply electric power, and an oscillating unit 7 that alternately changes polarity at a predetermined frequency and outputs a voltage to each of the targets 41a and 41b. In this case, although the waveform of the output voltage is a substantially sinusoidal wave, it is not limited thereto, and may be, for example, a substantially square wave.
電力供給部6具有:控制其作動的第1CPU電路61、及輸入商用的交流電力(3相AC200V或400V)的輸入部62、以及將所輸入的交流電力予以整流而變換成直流電力的6個二極體63,可發揮經由直流電力線64a、64b來將直流電力輸出至振盪部7的任務。The power supply unit 6 includes a first CPU circuit 61 that controls its operation, an input unit 62 that inputs commercial AC power (three-phase AC 200V or 400V), and six AC powers that are rectified and converted into DC power. The diode 63 can perform a task of outputting DC power to the oscillation unit 7 via the DC power lines 64a and 64b.
並且,在電力供給部6中設有:設置於直流電力線64a、64b間的開關電晶體65、及通信自如地連接至第1CPU電路61,控制開關電晶體65的開啟、關閉之第1驅動器電路66a及第1PMW控制電路66b。此情況,具有電流檢出感測器及電壓檢出變壓器且設有檢測出直流電力線64a、64b間的電流、電壓之檢出電路67a及AD變換電路67b,可經由檢出電路67a及AD變換電路67b來輸入至CPU電路61。Further, the power supply unit 6 is provided with a switching transistor 65 provided between the DC power lines 64a and 64b, and a first driver circuit that is communicably connected to the first CPU circuit 61 and controls the opening and closing of the switching transistor 65. 66a and the first PMW control circuit 66b. In this case, the current detecting sensor and the voltage detecting transformer are provided with the detecting circuit 67a and the AD converting circuit 67b that detect the current and voltage between the DC power lines 64a and 64b, and can be converted by the detecting circuit 67a and the AD. The circuit 67b is input to the CPU circuit 61.
另一方面,在振盪部7中設有:通信自如地連接至第1CPU電路61的第2CPU電路71、及構成設置於直流電力線64a、64b間的振盪用開關電路72之4個的第1~第4開關電晶體72a、72b、72c、72d、及通信自如地連接至第2CPU電路71,控制各開關電晶體72a、72b、72c、72d的開啟、關閉之第2驅動器電路73a及第2PMW控制電路73b。On the other hand, the oscillation unit 7 is provided with a second CPU circuit 71 that is communicably connected to the first CPU circuit 61 and a first one that constitutes four of the oscillation switch circuits 72 provided between the DC power lines 64a and 64b. The fourth switch transistors 72a, 72b, 72c, and 72d are connected to the second CPU circuit 71 in a communicative manner, and the second driver circuit 73a and the second PMW control for controlling the opening and closing of the switch transistors 72a, 72b, 72c, and 72d are controlled. Circuit 73b.
然後,若藉由第2驅動器電路73a及第2PMW控制電路73b,例如以第1及第4開關電晶體72a、72d、與第2及第3開關電晶體72b、72c的開啟、關閉的時序能夠反轉之方式來控制各開關電晶體72a、72b、72c、72d的作動,則可經由來自振盪用開關電路72的交流電力線74a、74b輸出正弦波的交流電力。此情況,設有檢測出振盪電壓、振盪電流的檢出電路75a及AD變換電路75b,可經由檢出電路75a及AD變換電路75b來輸入至第2CPU電路71。Then, by the second driver circuit 73a and the second PMW control circuit 73b, for example, the timings of turning on and off the first and fourth switching transistors 72a and 72d and the second and third switching transistors 72b and 72c can be performed. By controlling the operation of each of the switch transistors 72a, 72b, 72c, and 72d by the inversion, the AC power of the sine wave can be output via the AC power lines 74a and 74b from the oscillation switch circuit 72. In this case, the detection circuit 75a and the AD conversion circuit 75b that detect the oscillation voltage and the oscillation current are provided, and can be input to the second CPU circuit 71 via the detection circuit 75a and the AD conversion circuit 75b.
交流電力線74a、74b是經由串聯或並聯或該等組合的共振用LC電路來連接至具有習知構造的輸出變壓器76,且來自輸出變壓器76的輸出纜線K會分別連接至一對的靶41a、41b。此情況,具有電流檢出感測器及電壓檢出變壓器,且設有檢測出往一對的靶41a、41b之輸出電壓、輸出電流的檢出電路77a及AD變換電路77b,可經由檢出電路77a及AD變換電路77b來輸入至第2CPU電路71。藉此,濺射中,可經由交流電源E以一定的頻率交替改變極性來對一對的靶41a、41b施加一定的電壓。The AC power lines 74a, 74b are connected to the output transformer 76 having a conventional configuration via a series or parallel or combined resonant LC circuit, and the output cables K from the output transformer 76 are respectively connected to a pair of targets 41a. 41b. In this case, the current detecting sensor and the voltage detecting transformer are provided, and the detecting circuit 77a and the AD converting circuit 77b that detect the output voltage and the output current of the pair of targets 41a and 41b are provided, and can be detected. The circuit 77a and the AD conversion circuit 77b are input to the second CPU circuit 71. Thereby, in the sputtering, a constant voltage can be applied to the pair of targets 41a and 41b by alternately changing the polarity at a constant frequency via the AC power source E.
並且,來自檢出電路77a的輸出會被連接至檢測出輸出電壓與輸出電流的輸出相位及頻率之檢出電路78a,可經由通信自如地連接至該檢出電路78a的輸出相位頻率控制電路78b來將輸出電壓與輸出電流的相位及頻率輸入至第2CPU電路71。藉此,使用來自第2CPU電路71的控制信號,藉由第2驅動器電路73a控制振盪用開關電路72的各開關電晶體72a、72b、72c、73d的開啟、關閉,可控制成輸出電壓與輸出電流的相位會彼此大略一致,輸出相位頻率控制電路78b、第2CPU電路71及第2驅動器電路73a為構成相位調節手段。Further, the output from the detecting circuit 77a is connected to the detecting circuit 78a that detects the output phase and frequency of the output voltage and the output current, and is communicably connected to the output phase frequency control circuit 78b of the detecting circuit 78a. The phase and frequency of the output voltage and the output current are input to the second CPU circuit 71. Thereby, by using the control signal from the second CPU circuit 71, the second driver circuit 73a controls the switching transistors 72a, 72b, 72c, and 73d of the oscillation switching circuit 72 to be turned on and off, and can be controlled to output voltage and output. The phases of the currents are substantially identical to each other, and the output phase frequency control circuit 78b, the second CPU circuit 71, and the second driver circuit 73a constitute phase adjustment means.
然後,藉由基板搬送手段來將處理基板S搬送至與一對的靶41a、41b對向的位置,且經由氣體導入手段3來導入所定的濺射氣體。經由交流電源E來對一對的靶41a、41b施加交流電壓,將各靶41a、41b交替切換成陽極電極、陰極電極,使輝光放電產生於陽極電極及陰極電極間,而形成電漿環境。藉此,電漿環境中的離子會往陰極電極的一方的靶41a、41b加速衝撃,藉由靶原子飛散,在處理基板S表面形成薄膜。Then, the processing substrate S is transported to a position facing the pair of targets 41a and 41b by the substrate transfer means, and the predetermined sputtering gas is introduced through the gas introduction means 3. An AC voltage is applied to the pair of targets 41a and 41b via the AC power source E, and the targets 41a and 41b are alternately switched between the anode electrode and the cathode electrode, and a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma environment. Thereby, ions in the plasma environment are accelerated toward one of the targets 41a and 41b of the cathode electrode, and the target atoms are scattered to form a thin film on the surface of the substrate S.
此情況,在磁石組合體5設有未圖示的馬達等的驅動手段,可藉由該驅動手段在沿著靶41a、41b的水平方向之2處的位置之間平行且等速往復作動,可在靶41a、41b全面均等地取得侵蝕領域。In this case, the magnet assembly 5 is provided with a driving means such as a motor (not shown), and the driving means can be reciprocated in parallel and at a constant speed in two positions along the horizontal direction of the targets 41a and 41b. The field of erosion can be achieved uniformly in the targets 41a, 41b.
但,上述輝光放電中,基於某些原因,會發生電弧放電,若此電弧放電在一對的靶41a、41b局部發生,則因為誘發粒子或飛濺等的問題,所以為了良好地形成薄膜,而必須迅速地檢測出電弧放電發生,立即遮斷來自交流電源E的輸出。However, in the above-described glow discharge, arc discharge occurs for some reason, and if the arc discharge occurs locally in the pair of targets 41a and 41b, problems such as particles or splash are induced, so that a thin film is formed in order to form a thin film. It is necessary to quickly detect the occurrence of arc discharge and immediately interrupt the output from the AC power source E.
就本實施形態而言,是在振盪部7設置電弧檢出手段8,其係檢測出往一對的靶41a、41b之輸出電壓波形的電壓降下時間比正常的輝光放電時更短時間之電壓降下。然後,一旦在電弧檢出手段8檢測出電弧放電發生,則會將電壓降下電弧輸出信號輸出至通信自如連接的第2CPU電路71,使用來自與第2CPU電路71通信自如的第1CPU電路61之控制信號,藉由第1驅動器電路66a控制開關電晶體65的作動,立即遮斷往一對的靶41a、41b之輸出。In the present embodiment, the arc detecting means 8 is provided in the oscillating portion 7, and the voltage drop time of the output voltage waveform of the pair of targets 41a, 41b is detected to be shorter than the normal glow discharge time. lower. When the arc detecting means 8 detects the occurrence of the arc discharge, the voltage drop arc output signal is output to the second CPU circuit 71 that is communicably connected, and the control is performed by the first CPU circuit 61 that is freely communicable from the second CPU circuit 71. The signal is controlled by the first driver circuit 66a to control the operation of the switching transistor 65, and the output to the pair of targets 41a and 41b is immediately blocked.
此情況,可使用來自第2CPU電路71的控制信號,藉由第2驅動器電路73a,例如以交流電力線74a、74b彼此間的電位能夠形成相同之方式,控制振盪用開關電路72的各開關電晶體72a、72b、72c、72d的作動,立即遮斷往一對的靶41a、41b之輸出。In this case, the control signal from the second CPU circuit 71 can be used, and the second driver circuit 73a can control the switching transistors of the oscillation switching circuit 72 in the same manner as the potential between the AC power lines 74a and 74b. The operations of 72a, 72b, 72c, and 72d immediately interrupt the output of the pair of targets 41a and 41b.
如圖3(a)~圖3(e)所示,電弧檢出手段8是具有:放大來自檢出電路77a的輸出電壓、輸出電流之電流讀出放大器81及電壓變壓器耦合放大器82、以及檢測出在電流讀出放大器81及電壓變壓器耦合放大器82所放大的輸出電流波形及輸出電壓波形的絕對值之第1絕對值檢出電路83a及第2絕對值檢出電路83b。並且,電弧檢出手段8是具備:分別具有輸入來自第1及第2絕對值檢出電路83a、83b的各個絕對值及預先設定的電流閘極檢出位準及電壓脈衝檢出位準的比較器841之電流閘極產生電路84a及電壓脈衝產生電路84b、及分別輸入來自電流閘極產生電路84a及電壓脈衝產生電路84b的電流閘極信號及電壓脈衝信號之電壓降下檢出電路85。此情況,預先設定的電流閘極檢出位準及電壓脈衝檢出位準(所定值)是例如使按照往一對的靶41a、41b之來自電力供給部6的輸出而變化,使能夠更高精度地電弧檢測。As shown in FIGS. 3(a) to 3(e), the arc detecting means 8 includes a current sense amplifier 81 and a voltage transformer coupling amplifier 82 for amplifying an output voltage from the detecting circuit 77a, an output current, and detection. The first absolute value detecting circuit 83a and the second absolute value detecting circuit 83b which are the absolute values of the output current waveform and the output voltage waveform amplified by the current sense amplifier 81 and the voltage transformer coupling amplifier 82 are provided. Further, the arc detecting means 8 is provided with each of the absolute values input from the first and second absolute value detecting circuits 83a and 83b and a preset current gate detecting level and a voltage pulse detecting level. The current gate generating circuit 84a of the comparator 841, the voltage pulse generating circuit 84b, and the voltage drop detecting circuit 85 for inputting the current gate signal and the voltage pulse signal from the current gate generating circuit 84a and the voltage pulse generating circuit 84b, respectively. In this case, the current gate detection level and the voltage pulse detection level (determined value) set in advance are changed, for example, in accordance with the output from the power supply unit 6 of the pair of targets 41a and 41b. High precision arc detection.
其次,說明有關在電弧檢出電路8之電弧放電發生的檢出。首先,使用來自電力供給部6的第1CPU電路61之控制信號控制開關電晶體65,經由直流電力線64a、64b來供給直流電力至振盪部7。其次,使用來自第2CPU電路71的控制信號控制第1~第4開關電晶體72a、72b、72c、72d的作動,對一對的靶41施加交流電壓。此時,對電流降下檢出電路85輸入復位信號而復位(參照圖3(c))。Next, the detection of occurrence of arc discharge in the arc detecting circuit 8 will be described. First, the switching transistor 65 is controlled by a control signal from the first CPU circuit 61 of the power supply unit 6, and DC power is supplied to the oscillation unit 7 via the DC power lines 64a and 64b. Next, the operation of the first to fourth switching transistors 72a, 72b, 72c, and 72d is controlled by the control signal from the second CPU circuit 71, and an alternating voltage is applied to the pair of targets 41. At this time, the current drop detection circuit 85 inputs a reset signal and resets it (see FIG. 3(c)).
其次,經由檢出電路77a將來自第1絕對值檢出電路83a的電流波形的絕對值、及電流閘極檢出位準輸入至電流閘極產生電路84a的比較器841,當該絕對值超過電流閘極檢出位準時,視為真空反應室11內發生輝光放電,對電流降下檢出電路85輸入正常放電信號(參照圖3(c))。此情況,最好在輸出電壓波形與輸出電流波形的相位彼此大略一致後,輸入正常放電信號。Next, the absolute value of the current waveform from the first absolute value detecting circuit 83a and the current gate detecting level are input to the comparator 841 of the current gate generating circuit 84a via the detecting circuit 77a, and when the absolute value exceeds When the current gate detection level is normal, it is regarded as glow discharge in the vacuum reaction chamber 11, and a normal discharge signal is input to the current drop detection circuit 85 (refer to Fig. 3(c)). In this case, it is preferable to input a normal discharge signal after the phases of the output voltage waveform and the output current waveform are substantially identical to each other.
其次,將來自第1及第2絕對值檢出電路83a、83b的各絕對值、及電流閘極檢出位準及預先設定的電壓脈衝檢出位準輸入至各比較器841,根據此由電流閘極產生電路84a及電壓脈衝產生電路84b來將電流閘極信號及電壓脈衝信號輸入至電壓降下檢出電路85,且將高速時脈信號輸入至電壓降下檢出電路85,而開始電弧放電發生的檢出(參照圖3(c))。Next, the absolute values from the first and second absolute value detecting circuits 83a and 83b, the current gate detecting level, and the preset voltage pulse detecting level are input to the respective comparators 841, and The current gate generating circuit 84a and the voltage pulse generating circuit 84b input the current gate signal and the voltage pulse signal to the voltage drop detecting circuit 85, and input the high speed clock signal to the voltage drop detecting circuit 85 to start the arc discharge. The occurrence of detection (refer to Figure 3 (c)).
在此,當一對的靶41a、41b彼此間發生電弧放電時,首先,往一對的靶41a、41b之輸出電壓會降下,然後,輸出電流會急速地增加。此情況,電流閘極信號是維持"1"(開啟狀態),僅電壓脈衝信號會形成"0"(關閉狀態)(參照圖3(b))。亦即,在電弧放電發生的檢出中,是以電壓降下檢出電路85來判斷電流閘極信號是否為"0",當電流閘極信號為"0"時,形成電流閘極信號關閉狀態。其次,若電流閘極信號形成"1",則形成電壓脈衝降下等待狀態,此情況,判斷電壓脈衝信號是否為"1",若電壓脈衝信號為"1",則判斷發生正常的輝光放電。然後,當電流閘極信號形成"0"時,若電壓脈衝信號為"0",則回到電流閘極信號關閉狀態。Here, when arcing occurs between the pair of targets 41a and 41b, first, the output voltage to the pair of targets 41a and 41b is lowered, and then the output current is rapidly increased. In this case, the current gate signal is maintained at "1" (on state), and only the voltage pulse signal forms "0" (off state) (refer to FIG. 3(b)). That is, in the detection of arc discharge occurrence, the voltage drop detection circuit 85 determines whether the current gate signal is "0", and when the current gate signal is "0", the current gate signal is turned off. . Next, if the current gate signal forms "1", a voltage pulse lowering wait state is formed. In this case, it is judged whether the voltage pulse signal is "1", and if the voltage pulse signal is "1", it is judged that normal glow discharge occurs. Then, when the current gate signal forms "0", if the voltage pulse signal is "0", the current gate signal is turned off.
相對的,在電流閘極信號為"1"的電壓脈衝降下等待狀態下,當電壓脈衝信號為"0"時,發生電壓降下,判斷產生電弧放電(參照圖3(d))。此情況,因為以高速時脈信號的1時脈或2時脈量的延遲來檢測出電壓降下,所以可迅速地檢測出電弧放電的發生(參照圖3(e))。On the other hand, when the voltage pulse signal of the current gate signal is "1" is lowered, the voltage drop is generated when the voltage pulse signal is "0" (see FIG. 3(d)). In this case, since the voltage drop is detected by the delay of the one-time pulse or the two-cycle pulse amount of the high-speed clock signal, the occurrence of the arc discharge can be quickly detected (see FIG. 3(e)).
若藉由電弧檢出手段8來檢測出電弧放電發生,則電弧放電發生會被輸出至第2CPU電路71,例如使用來自第2CPU電路71的控制信號,藉由第2驅動器電路73a來控制振盪用開關電路72的各開關電晶體72a、72b、72c、72d的作動,遮斷往一對的靶41a、41b之輸出。When the arc detecting means 8 detects the occurrence of the arc discharge, the arc discharge is generated and output to the second CPU circuit 71. For example, the control signal from the second CPU circuit 71 is used, and the second driver circuit 73a controls the oscillation. The operation of each of the switching transistors 72a, 72b, 72c, and 72d of the switch circuit 72 blocks the output of the pair of targets 41a and 41b.
藉此,由往一對的靶41a、41b之輸出電壓波形的電壓降下時間的長短來直接檢測出電弧放電發生,與求取靶41a、41b彼此間的電流值的變化或往靶41a、41b之輸出電壓的實效值或平均值來檢測出電弧放電者相較之下,可迅速地檢測出電弧放電發生,遮斷來自交流電源E的輸出。其結果,可縮小電弧放電發生時的能量來有效防止粒子或飛濺的發生等,且因為是在輸出電流流動時檢測出電壓降下的發生,所以例如可減少電弧放電的誤檢測。Thereby, the arc discharge is directly detected by the length of the voltage drop of the output voltage waveform of the pair of targets 41a and 41b, and the change in the current value between the targets 41a and 41b is obtained or the targets 41a and 41b are obtained. When the actual value or the average value of the output voltage is detected to detect the arc discharge, the occurrence of the arc discharge can be quickly detected, and the output from the AC power source E can be blocked. As a result, the energy at the time of occurrence of the arc discharge can be reduced to effectively prevent the occurrence of particles or splashes, and the occurrence of a voltage drop is detected when the output current flows. Therefore, for example, erroneous detection of the arc discharge can be reduced.
參照圖4(a)~圖4(e)來進行説明,元件符號80是其他實施形態的電弧檢出手段。此電弧檢出手段80是只由輸出電壓來檢測出電弧放電的發生者,具有:放大來自檢出電路77a的輸出電壓之電壓變壓器耦合放大器810、及檢測出在電壓變壓器耦合放大器810所放大的輸出電壓波形的絕對值之絕對值檢出電路820。並且,電弧檢出手段80是具有:設置分別輸入來自絕對值檢出電路820的絕對值及電壓脈衝檢出位準的比較器830a之電壓脈衝產生電路830、及輸入來自電壓脈衝產生電路830的電壓脈衝信號之電壓降下檢出電路840及脈衝寬檢出閘極發生器841。4(a) to 4(e), the reference numeral 80 is an arc detecting means of another embodiment. The arc detecting means 80 is a person who detects the arc discharge only by the output voltage, and has a voltage transformer coupling amplifier 810 that amplifies the output voltage from the detecting circuit 77a, and detects amplification by the voltage transformer coupling amplifier 810. The absolute value of the absolute value of the output voltage waveform is detected by the circuit 820. Further, the arc detecting means 80 has a voltage pulse generating circuit 830 for inputting a comparator 830a for inputting an absolute value from the absolute value detecting circuit 820 and a voltage pulse detecting level, and an input from the voltage pulse generating circuit 830. The voltage of the voltage pulse signal is lowered by the detection circuit 840 and the pulse width detection gate generator 841.
其次,說明有關在電弧檢出電路80之電弧放電發生的檢出。首先,和上述同様地使交流電源E作動,而對一對的靶41a、41b施加交流電壓。此時,對電壓降下檢出電路840輸入復位信號而復位(參照圖4(c))。Next, the detection of occurrence of arc discharge in the arc detecting circuit 80 will be described. First, the AC power source E is operated in the same manner as described above, and an AC voltage is applied to the pair of targets 41a and 41b. At this time, the reset signal is input to the voltage drop detection circuit 840 and reset (see FIG. 4(c)).
其次,將來自絕對值檢出電路820的絕對值及預先設定的電壓脈衝檢出位準輸入至比較器830a,由電壓脈衝產生電路830輸出電壓脈衝信號至電壓降下檢出電路840,且將正常放電信號及高速時脈信號輸入至電壓降下檢出電路840,而開始電弧放電發生的檢出(參照圖4(c))。然後,由輸入至電壓降下檢出電路840的電壓脈衝信號來製作在脈衝寬檢出閘極發生器841中具有正常的輝光放電狀態的脈衝寬之電壓閘極信號,當電壓閘極信號維持"1"(開啟狀態),僅電壓脈衝信號為"0"(關閉狀態)時,由輸出電壓的降下來檢測出電弧放電發生(參照圖4(b))。Next, the absolute value from the absolute value detecting circuit 820 and the preset voltage pulse detecting level are input to the comparator 830a, and the voltage pulse generating circuit 830 outputs the voltage pulse signal to the voltage drop detecting circuit 840, and will be normal. The discharge signal and the high-speed clock signal are input to the voltage drop detection circuit 840, and detection of occurrence of arc discharge is started (refer to FIG. 4(c)). Then, a voltage wide gate signal having a normal glow discharge state in the pulse width detecting gate generator 841 is generated by a voltage pulse signal input to the voltage drop detecting circuit 840, and the voltage gate signal is maintained. 1" (on state), when only the voltage pulse signal is "0" (off state), arc discharge is detected by the drop of the output voltage (see Fig. 4 (b)).
亦即,在電弧放電發生的檢出中,於電壓降下檢出電路840,當電壓閘極信號為"0"時,為電壓閘極信號關閉狀態。其次,若電壓閘極信號形成"1",則形成電壓脈衝信號降下等待狀態,此情況,判斷電壓脈衝信號是否為"1",在此狀態下判斷正常的輝光放電發生。而且,當電壓閘極信號形成"0"時,若電壓脈衝信號亦為"0",則回到電壓閘極信號關閉狀態。That is, in the detection of occurrence of arc discharge, the circuit 840 is detected under voltage drop, and when the voltage gate signal is "0", the voltage gate signal is turned off. Next, if the voltage gate signal forms "1", the voltage pulse signal is lowered to wait, and in this case, it is judged whether or not the voltage pulse signal is "1", and in this state, normal glow discharge is judged to occur. Moreover, when the voltage gate signal forms "0", if the voltage pulse signal is also "0", the voltage gate signal is turned off.
相對的,在電壓脈衝信號降下等待狀態下,當電壓脈衝信號形成"0"時,發生電壓降下,判斷產生電弧放電(參照圖4(d))。此情況,因為以高速時脈信號的1時脈或2時脈量的延遲來檢測出電壓降下,所以可迅速地檢測出電弧放電的發生(圖4(e)參照)。On the other hand, in the standby state of the voltage pulse signal drop, when the voltage pulse signal forms "0", a voltage drop occurs, and it is judged that an arc discharge is generated (refer to FIG. 4(d)). In this case, since the voltage drop is detected by the delay of the one-time pulse or the two-cycle pulse amount of the high-speed clock signal, the occurrence of the arc discharge can be quickly detected (refer to FIG. 4(e)).
藉此,僅以一對的靶41a、41b彼此間的電壓來檢測出電弧放電發生,所以不必考慮電壓與電流的相位偏移,即使起動時等電壓與電流的相位不一致時還是可以檢測出電弧放電發生。Thereby, the arc discharge is detected only by the voltage between the pair of targets 41a and 41b. Therefore, it is not necessary to consider the phase shift of the voltage and the current, and the arc can be detected even when the phase of the voltage and the current do not coincide with each other at the time of starting. Discharge occurs.
另外,雖上述實施形態是經由絕對值來直接製作電壓閘極信號,但並非限於此,例如亦可使相對檢出的電壓寬的大小變化。此情況,先以其他的方法來檢測出非電弧放電的狀態者,之後相對性地決定非電弧放電的的電壓寬,以此為基準檢測出電弧時的電壓寬變小的情況。Further, in the above embodiment, the voltage gate signal is directly generated by the absolute value. However, the present invention is not limited thereto. For example, the magnitude of the voltage width detected may be changed. In this case, the state in which the arc discharge is not detected is detected by another method, and then the voltage width of the non-arc discharge is relatively determined, and the voltage width at the time of the arc is detected to be small as a reference.
參照圖5(a)及圖5(b)來進行説明,元件符號9為另外其他實施形態的電弧檢出手段。此電弧檢出手段9也是只由輸出電壓來檢測出電弧放電的發生者,具有:放大來自檢出電路77a的輸出電壓之電壓變壓器耦合放大器91、及可去除輸出電壓的雜訊之習知的雜訊濾波器92及微分電路93。來自此微分電路93的輸出會被輸入至絕對值檢出電路94,設有電壓脈衝產生電路,其係設置分別輸入該絕對值及電壓微分波形檢出位準的比較器95a。5(a) and 5(b), the component symbol 9 is an arc detecting means of another embodiment. The arc detecting means 9 is also a person who detects the arc discharge only by the output voltage, and has a voltage transformer coupling amplifier 91 that amplifies the output voltage from the detecting circuit 77a, and a conventional method that can remove the noise of the output voltage. The noise filter 92 and the differential circuit 93. The output from the differentiating circuit 93 is input to the absolute value detecting circuit 94, and is provided with a voltage pulse generating circuit which is provided with a comparator 95a for inputting the absolute value and the voltage differential waveform detecting level, respectively.
其次,說明有關在電弧檢出電路9之電弧放電發生的檢出。首先,和上述同様地使交流電源E作動,而對一對的靶41a、41b施加交流電壓。其次,將經過微分電路93之來自絕對值檢出電路94的絕對值、及預先設定的電壓微分波形檢出位準輸入至比較器95a。此情況,當絕對值比電壓微分波形檢出位準更低時,判斷發生正常的輝光放電。相對的,當絕對值超過電壓微分波形檢出位準時,判斷發生電弧放電(參照圖5(b))。Next, the detection of occurrence of arc discharge in the arc detecting circuit 9 will be described. First, the AC power source E is operated in the same manner as described above, and an AC voltage is applied to the pair of targets 41a and 41b. Next, the absolute value from the absolute value detecting circuit 94 passing through the differentiating circuit 93 and the preset voltage differential waveform detecting level are input to the comparator 95a. In this case, when the absolute value is lower than the voltage differential waveform detection level, it is judged that the normal glow discharge occurs. On the other hand, when the absolute value exceeds the voltage differential waveform detection level, it is judged that arc discharge has occurred (refer to FIG. 5(b)).
藉此,可以簡單的電路構成來實現電弧放電檢出電路9,且因為只以靶41a、41b彼此間的電壓來檢測出電弧放電的發生,所以可不必考慮電壓與電流的相位偏移,即使起動時等電壓與電流的相位不一致時還是可以檢測出電弧放電的發生。Thereby, the arc discharge detecting circuit 9 can be realized with a simple circuit configuration, and since the occurrence of the arc discharge is detected only by the voltage between the targets 41a and 41b, the phase shift of the voltage and the current can be omitted, even if The occurrence of arc discharge can be detected even when the phase of the voltage and current are not the same at the time of starting.
參照圖6(a)及圖6(b)來進行説明,元件符號90為另外其他實施形態的電弧檢出手段。此電弧檢出手段90是由輸出電壓波形及輸出電流波形的差分波形來檢測出電弧放電的發生者,具有:放大來自檢出電路77a的輸出電壓及輸出電流之電流讀出放大器910及電流變壓器耦合放大器920、及可去除輸出電壓波形及輸出電流波形的雜訊之習知的雜訊濾波器930a、930b、及以經過雜訊濾波器930a、930b的輸出電壓波形及輸出電流波形的振幅能夠大略形成一致之方式來調節的第1及第2增益調整電路940a、940b。6(a) and 6(b), the component symbol 90 is an arc detecting means of another embodiment. The arc detecting means 90 is a person who detects the occurrence of arc discharge by a difference waveform between the output voltage waveform and the output current waveform, and has a current sense amplifier 910 and a current transformer that amplify the output voltage and the output current from the detecting circuit 77a. The coupled amplifier 920 and the conventional noise filters 930a and 930b that can remove the noise of the output voltage waveform and the output current waveform, and the amplitudes of the output voltage waveform and the output current waveform through the noise filters 930a and 930b can The first and second gain adjustment circuits 940a and 940b are adjusted in a substantially uniform manner.
並且,電弧檢出手段90是具有:分別輸入經過第1及第2增益調整電路940a、940b的輸出電壓波形及輸出電流波形,對應於該等的差而差動之習知構造的差動放大器950、及檢測出來自差動放大器950的差分波形的絕對值之絕對值檢出電路960、及設置分別輸入該絕對值及差分波形檢出位準的比較器970a之差分波形檢出電路970。Further, the arc detecting means 90 is a differential amplifier having a conventional structure in which an output voltage waveform and an output current waveform are input to the first and second gain adjusting circuits 940a and 940b, respectively, and are differentiated according to the difference. 950. An absolute value detecting circuit 960 that detects the absolute value of the differential waveform from the differential amplifier 950, and a differential waveform detecting circuit 970 that sets the comparator 970a that inputs the absolute value and the differential waveform detecting level, respectively.
其次,說明有關在電弧檢出電路90之電弧放電發生的檢出。首先,和上述同様地使交流電源E作動,而對一對的靶41a、41b施加交流電壓。其次,使用來自第2CPU電路71的控制信號,藉由第2驅動器電路73a來控制振盪用開關電路72的各開關電晶體72a、72b、72c、73d的開啟、關閉,控制成輸出電壓與輸出電流的相位會彼此大略一致。Next, the detection of occurrence of arc discharge in the arc detecting circuit 90 will be described. First, the AC power source E is operated in the same manner as described above, and an AC voltage is applied to the pair of targets 41a and 41b. Next, using the control signal from the second CPU circuit 71, the second driver circuit 73a controls the switching transistors 72a, 72b, 72c, and 73d of the oscillation switching circuit 72 to be turned on and off, and is controlled to output voltage and output current. The phases will be roughly the same as each other.
其次,按照在檢出電路77a所檢測出的輸出電壓及輸出電流,藉由第2CPU電路71來分別輸入電流增益調整信號及電壓增益調整信號至第1及第2增益調整電路940a、940b,且藉由第1及第2增益調整電路940a、940b來調整輸出電壓波形、輸出電流波形的振幅大略一致之後,將輸出電壓波形、輸出電流波形輸入至差動放大器950。Then, in accordance with the output voltage and the output current detected by the detection circuit 77a, the second CPU circuit 71 inputs the current gain adjustment signal and the voltage gain adjustment signal to the first and second gain adjustment circuits 940a and 940b, respectively. After the first and second gain adjustment circuits 940a and 940b adjust the output voltage waveform and the amplitude of the output current waveform to substantially match, the output voltage waveform and the output current waveform are input to the differential amplifier 950.
其次,由差動放大器950來將經過絕對值檢出電路960的差分波形的絕對值及預先設定的差分波形檢出位準輸入至比較器970a。此情況,當差分波形的絕對值比差分波形檢出位準更低時,判斷發生正常的輝光放電。相對的,當絕對值超過差分波形檢出位準時,判斷發生電弧放電(參照圖6(b))。Next, the differential amplifier 950 inputs the absolute value of the differential waveform passing through the absolute value detecting circuit 960 and the preset differential waveform detecting level to the comparator 970a. In this case, when the absolute value of the differential waveform is lower than the differential waveform detection level, it is judged that a normal glow discharge occurs. On the other hand, when the absolute value exceeds the differential waveform detection level, it is judged that arc discharge has occurred (refer to FIG. 6(b)).
藉此,使用於電弧檢出時的波形是由適當調節後的電流波形與電壓波形的差分所合成者,當電弧放電發生時,該差分波形的輸出會形成更大的輸出波形(參照圖6(b)),因此不易受到雜訊的影響,其結果可減少誤檢出。Thereby, the waveform used in the arc detection is synthesized by the difference between the appropriately adjusted current waveform and the voltage waveform. When the arc discharge occurs, the output of the differential waveform forms a larger output waveform (refer to FIG. 6). (b)), so it is not susceptible to noise, and the result is less false detection.
另外,在上述實施形態中雖是說明有關在真空反應室11內配置成對的2個靶41a、41b,但並非限於此,亦可並設複數(3個以上)的靶,以能夠對至少2個的靶交替地施加交流電壓之方式來分配1個交流電源者亦可適用於本發明的電弧檢測方法。Further, in the above-described embodiment, the two targets 41a and 41b disposed in the vacuum reaction chamber 11 are described. However, the present invention is not limited thereto, and a plurality of (three or more) targets may be provided in parallel to enable at least It is also applicable to the arc detecting method of the present invention that two AC targets are alternately applied with an alternating voltage.
1...濺射裝置1. . . Sputtering device
41a、41b...靶41a, 41b. . . target
6...電力供給部6. . . Power supply department
7...振盪部7. . . Oscillation section
8...電弧檢出手段8. . . Arc detection means
E...交流電源E. . . AC power
K...電源纜線K. . . Power cable
圖1是表示本發明的濺射裝置的模式圖。Fig. 1 is a schematic view showing a sputtering apparatus of the present invention.
圖2是用以說明交流電源。Figure 2 is a diagram for explaining an AC power source.
圖3(a)是概略說明電弧檢出手段,(b)是用以說明來自電流波形、電壓波形的信號之電弧放電發生時的變化,(c)是用以說明往電壓降下檢出電路之信號的輸入,(d)是用以說明電弧放電檢出的流程圖,(e)是擴大顯示(b)所示之電弧放電發生時的信號的變化。Fig. 3(a) is a schematic view showing an arc detecting means, (b) is a view for explaining a change in arc discharge when a signal of a current waveform and a voltage waveform is generated, and (c) is for explaining a circuit for detecting a voltage drop. The input of the signal, (d) is a flowchart for explaining the detection of the arc discharge, and (e) is the change of the signal when the arc discharge shown in (b) is enlarged.
圖4(a)是概略說明其他形態的電弧檢出手段,(b)是用以說明來自電壓波形的信號之電弧放電發生時的變化,(c)是用以說明往電壓降下檢出電路之信號的輸入,(d)是用以說明電弧放電檢出的流程圖,(e)是擴大顯示(b)所示之電弧放電發生時的信號的變化。Fig. 4(a) is a view schematically showing an arc detecting means of another embodiment, (b) is a view for explaining a change in arcing of a signal from a voltage waveform, and (c) is for explaining a circuit for detecting a voltage drop. The input of the signal, (d) is a flowchart for explaining the detection of the arc discharge, and (e) is the change of the signal when the arc discharge shown in (b) is enlarged.
圖5(a)是概略說明另外其他形態的電弧檢出手段,(b)是用以說明電壓波形的電弧放電發生時的變化。Fig. 5(a) is a schematic view showing another embodiment of the arc detecting means, and Fig. 5(b) is a view for explaining a change in the arc discharge when the voltage waveform is generated.
圖6(a)是概略說明另外其他形態的電弧檢出手段,(b)是用以說明差分波形的電弧放電發生時的變化。Fig. 6(a) is a view schematically showing another embodiment of the arc detecting means, and Fig. 6(b) is a view for explaining a change in the occurrence of arcing of the differential waveform.
8...電弧檢出手段8. . . Arc detection means
41a、41b...靶41a, 41b. . . target
71...第2CPU電路71. . . Second CPU circuit
76...輸出變壓器76. . . Output transformer
77a...檢出電路77a. . . Detection circuit
81...電流讀出放大器81. . . Current sense amplifier
82...電壓變壓器耦合放大器82. . . Voltage transformer coupled amplifier
83a...第1絕對值檢出電路83a. . . First absolute value detection circuit
83b...第2絕對值檢出電路83b. . . 2nd absolute value detection circuit
84a...電流閘極產生電路84a. . . Current gate generating circuit
84b...電壓脈衝產生電路84b. . . Voltage pulse generating circuit
85...電壓降下檢出電路85. . . Voltage drop detection circuit
841...比較器841. . . Comparators
K...輸出纜線K. . . Output cable
Claims (18)
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| JP2006003444A JP4963023B2 (en) | 2006-01-11 | 2006-01-11 | Sputtering method and sputtering apparatus |
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| TWI392755B true TWI392755B (en) | 2013-04-11 |
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| JP (1) | JP4963023B2 (en) |
| KR (1) | KR101028050B1 (en) |
| CN (1) | CN101370959B (en) |
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| JP5016819B2 (en) * | 2006-01-11 | 2012-09-05 | 株式会社アルバック | Sputtering method and sputtering apparatus |
| JP5322235B2 (en) * | 2007-08-20 | 2013-10-23 | 株式会社アルバック | Sputtering method |
| JP5429771B2 (en) * | 2008-05-26 | 2014-02-26 | 株式会社アルバック | Sputtering method |
| US9613784B2 (en) | 2008-07-17 | 2017-04-04 | Mks Instruments, Inc. | Sputtering system and method including an arc detection |
| JP5363166B2 (en) * | 2009-03-31 | 2013-12-11 | 株式会社アルバック | Sputtering method |
| DE102010031568B4 (en) | 2010-07-20 | 2014-12-11 | TRUMPF Hüttinger GmbH + Co. KG | Arclöschanordnung and method for erasing arcs |
| US20130313108A1 (en) * | 2011-02-08 | 2013-11-28 | Sharp Kabushiki Kaisha | Magnetron sputtering device, method for controlling magnetron sputtering device, and film forming method |
| DE102013110883B3 (en) * | 2013-10-01 | 2015-01-15 | TRUMPF Hüttinger GmbH + Co. KG | Apparatus and method for monitoring a discharge in a plasma process |
| EP2905801B1 (en) | 2014-02-07 | 2019-05-22 | TRUMPF Huettinger Sp. Z o. o. | Method of monitoring the discharge in a plasma process and monitoring device for monitoring the discharge in a plasma |
| TWI617687B (en) * | 2014-12-04 | 2018-03-11 | 財團法人金屬工業研究發展中心 | Monitoring method and system for a sputter device |
| KR101757818B1 (en) | 2015-10-12 | 2017-07-26 | 세메스 주식회사 | Apparatus for monitoring pulsed radio frequency power, and apparatus for treating substrate comprising the same |
| US11004660B2 (en) | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
| JP2019189913A (en) * | 2018-04-26 | 2019-10-31 | 京浜ラムテック株式会社 | Sputtering cathode, sputtering cathode assembly and sputtering apparatus |
| US12456604B2 (en) | 2019-12-24 | 2025-10-28 | Eagle Harbor Technologies, Inc. | Nanosecond pulser RF isolation for plasma systems |
| JP7195504B2 (en) * | 2020-07-31 | 2022-12-26 | 国立研究開発法人日本原子力研究開発機構 | Vacuum component, vacuum exhaust method using the same |
| DE202021103238U1 (en) * | 2021-06-16 | 2021-06-22 | TRUMPF Hüttinger GmbH + Co. KG | Signal processing system and power supply device with a signal processing system |
| CN118984519A (en) * | 2024-08-05 | 2024-11-19 | 上海硬石科技有限公司 | A circuit device for assisting plasma excitation |
| CN118890759A (en) * | 2024-08-09 | 2024-11-01 | 上海硬石科技有限公司 | An arc management system used in AC plasma excitation power supply |
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| JPH11200036A (en) * | 1998-01-16 | 1999-07-27 | Toshiba Corp | Method for producing thin film and sputtering apparatus therefor |
| TW460602B (en) * | 1997-04-21 | 2001-10-21 | Tokyo Electron Ltd | Method and apparatus for ionized sputtering of materials |
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| DE4441206C2 (en) * | 1994-11-19 | 1996-09-26 | Leybold Ag | Device for the suppression of rollovers in cathode sputtering devices |
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| JP2001003166A (en) * | 1999-04-23 | 2001-01-09 | Nippon Sheet Glass Co Ltd | Method for coating surface of substrate with coating film and substrate by using the method |
| JP2002012969A (en) * | 2000-07-03 | 2002-01-15 | Sanyo Shinku Kogyo Kk | Method for controlling sputtering apparatus |
| JP4780972B2 (en) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | Sputtering equipment |
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| TW460602B (en) * | 1997-04-21 | 2001-10-21 | Tokyo Electron Ltd | Method and apparatus for ionized sputtering of materials |
| JPH11200036A (en) * | 1998-01-16 | 1999-07-27 | Toshiba Corp | Method for producing thin film and sputtering apparatus therefor |
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| JP2007186725A (en) | 2007-07-26 |
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| CN101370959B (en) | 2011-01-12 |
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