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TW200732488A - Sputtering method and sputtering system - Google Patents

Sputtering method and sputtering system

Info

Publication number
TW200732488A
TW200732488A TW096101141A TW96101141A TW200732488A TW 200732488 A TW200732488 A TW 200732488A TW 096101141 A TW096101141 A TW 096101141A TW 96101141 A TW96101141 A TW 96101141A TW 200732488 A TW200732488 A TW 200732488A
Authority
TW
Taiwan
Prior art keywords
power supply
output
targets
interrupted
sputtering
Prior art date
Application number
TW096101141A
Other languages
Chinese (zh)
Other versions
TWI392755B (en
Inventor
Motoshi Kobayashi
Hajime Nakamura
Yoshikuni Horishita
Atsushi Ono
Shigemitsu Satou
Toshio Nakajima
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200732488A publication Critical patent/TW200732488A/en
Application granted granted Critical
Publication of TWI392755B publication Critical patent/TWI392755B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

When a film is deposited by sputtering employing an AC power supply, output from the AC power supply is interrupted by detecting occurrence of arc discharge quickly and generation of particles or splash can be prevented effectively by reducing energy when arc discharge is generated. A pair of targets (41a, 41b) provided in a vacuum chamber (11) are applied with a voltage at a predetermined frequency through the AC power supply (E) while changing the polarity alternately, each target is switched alternately to an anode electrode and a cathode electrode, and plasma atmosphere is formed by generating glow discharge between the anode electrode and the cathode electrode in order to sputter each target. In this regard, output voltage waveform to the pair of targets is detected and output from the AC power supply is interrupted when the voltage drop time of the output voltage waveform is judged shorter than the normal glow discharge time.
TW096101141A 2006-01-11 2007-01-11 Sputtering method and sputtering device TWI392755B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006003444A JP4963023B2 (en) 2006-01-11 2006-01-11 Sputtering method and sputtering apparatus

Publications (2)

Publication Number Publication Date
TW200732488A true TW200732488A (en) 2007-09-01
TWI392755B TWI392755B (en) 2013-04-11

Family

ID=38256310

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101141A TWI392755B (en) 2006-01-11 2007-01-11 Sputtering method and sputtering device

Country Status (5)

Country Link
JP (1) JP4963023B2 (en)
KR (1) KR101028050B1 (en)
CN (1) CN101370959B (en)
TW (1) TWI392755B (en)
WO (1) WO2007080905A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452160B (en) * 2008-05-26 2014-09-11 Ulvac Inc Sputtering method
US12198898B2 (en) 2018-11-30 2025-01-14 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5016819B2 (en) * 2006-01-11 2012-09-05 株式会社アルバック Sputtering method and sputtering apparatus
KR20100030676A (en) * 2007-08-20 2010-03-18 가부시키가이샤 알박 Sputtering method
US9613784B2 (en) * 2008-07-17 2017-04-04 Mks Instruments, Inc. Sputtering system and method including an arc detection
JP5363166B2 (en) * 2009-03-31 2013-12-11 株式会社アルバック Sputtering method
DE102010031568B4 (en) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung and method for erasing arcs
US20130313108A1 (en) * 2011-02-08 2013-11-28 Sharp Kabushiki Kaisha Magnetron sputtering device, method for controlling magnetron sputtering device, and film forming method
DE102013110883B3 (en) * 2013-10-01 2015-01-15 TRUMPF Hüttinger GmbH + Co. KG Apparatus and method for monitoring a discharge in a plasma process
EP2905801B1 (en) 2014-02-07 2019-05-22 TRUMPF Huettinger Sp. Z o. o. Method of monitoring the discharge in a plasma process and monitoring device for monitoring the discharge in a plasma
TWI617687B (en) * 2014-12-04 2018-03-11 財團法人金屬工業研究發展中心 Monitoring method and system for a sputter device
KR101757818B1 (en) 2015-10-12 2017-07-26 세메스 주식회사 Apparatus for monitoring pulsed radio frequency power, and apparatus for treating substrate comprising the same
JP2019189913A (en) * 2018-04-26 2019-10-31 京浜ラムテック株式会社 Sputtering cathode, sputtering cathode assembly and sputtering apparatus
JP7195504B2 (en) * 2020-07-31 2022-12-26 国立研究開発法人日本原子力研究開発機構 Vacuum component, vacuum exhaust method using the same
DE202021103238U1 (en) * 2021-06-16 2021-06-22 TRUMPF Hüttinger GmbH + Co. KG Signal processing system and power supply device with a signal processing system
CN118984519A (en) * 2024-08-05 2024-11-19 上海硬石科技有限公司 A circuit device for assisting plasma excitation
CN118890759A (en) * 2024-08-09 2024-11-01 上海硬石科技有限公司 An arc management system used in AC plasma excitation power supply

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4441206C2 (en) * 1994-11-19 1996-09-26 Leybold Ag Device for the suppression of rollovers in cathode sputtering devices
JPH09170079A (en) * 1995-12-18 1997-06-30 Asahi Glass Co Ltd Sputtering method and apparatus
AU6977998A (en) * 1997-04-21 1998-11-13 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
JPH11200036A (en) * 1998-01-16 1999-07-27 Toshiba Corp Method for producing thin film and sputtering apparatus therefor
JP2001003166A (en) * 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd Method for coating surface of substrate with coating film and substrate by using the method
JP2002012969A (en) * 2000-07-03 2002-01-15 Sanyo Shinku Kogyo Kk Method for controlling sputtering apparatus
JP4780972B2 (en) * 2004-03-11 2011-09-28 株式会社アルバック Sputtering equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452160B (en) * 2008-05-26 2014-09-11 Ulvac Inc Sputtering method
US12198898B2 (en) 2018-11-30 2025-01-14 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems

Also Published As

Publication number Publication date
JP2007186725A (en) 2007-07-26
JP4963023B2 (en) 2012-06-27
KR20080078053A (en) 2008-08-26
CN101370959B (en) 2011-01-12
TWI392755B (en) 2013-04-11
KR101028050B1 (en) 2011-04-08
WO2007080905A1 (en) 2007-07-19
CN101370959A (en) 2009-02-18

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