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TWI368627B - Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method - Google Patents

Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method

Info

Publication number
TWI368627B
TWI368627B TW095143083A TW95143083A TWI368627B TW I368627 B TWI368627 B TW I368627B TW 095143083 A TW095143083 A TW 095143083A TW 95143083 A TW95143083 A TW 95143083A TW I368627 B TWI368627 B TW I368627B
Authority
TW
Taiwan
Prior art keywords
silicon
substrate processing
antireflective coating
containing antireflective
forming composition
Prior art date
Application number
TW095143083A
Other languages
English (en)
Other versions
TW200732383A (en
Inventor
Tsutomu Ogihara
Motoaki Iwabuchi
Takeshi Asano
Takafumi Ueda
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200732383A publication Critical patent/TW200732383A/zh
Application granted granted Critical
Publication of TWI368627B publication Critical patent/TWI368627B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095143083A 2005-11-21 2006-11-21 Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method TWI368627B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005335264 2005-11-21

Publications (2)

Publication Number Publication Date
TW200732383A TW200732383A (en) 2007-09-01
TWI368627B true TWI368627B (en) 2012-07-21

Family

ID=37735140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143083A TWI368627B (en) 2005-11-21 2006-11-21 Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method

Country Status (5)

Country Link
US (1) US7910283B2 (zh)
EP (1) EP1788012B1 (zh)
KR (1) KR101225417B1 (zh)
DE (1) DE602006006135D1 (zh)
TW (1) TWI368627B (zh)

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JP4793592B2 (ja) 2007-11-22 2011-10-12 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法
FR2935977B1 (fr) * 2008-09-15 2010-12-17 Centre Nat Rech Scient Procede d'hydrolyse-polycondensation photochimique de chromophores reticulables a encombrement sterique, catalyse par un acide photogenere et ses applications.
JP5015891B2 (ja) 2008-10-02 2012-08-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法
JP5015892B2 (ja) 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
KR101288572B1 (ko) * 2008-12-17 2013-07-22 제일모직주식회사 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물
TW201300459A (zh) * 2011-03-10 2013-01-01 Dow Corning 用於抗反射塗層的聚矽烷矽氧烷（ｐｏｌｙｓｉｌａｎｅｓｉｌｏｘａｎｅ）樹脂
KR101592297B1 (ko) * 2011-09-30 2016-02-05 후지필름 가부시키가이샤 경화성 수지 조성물, 광학 부재 세트, 그 제조 방법, 이것을 사용한 고체 촬상 소자
CN104066804A (zh) * 2012-01-18 2014-09-24 道康宁公司 富含硅的抗反射涂层材料及其制备方法
JP6167588B2 (ja) * 2012-03-29 2017-07-26 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9348228B2 (en) 2013-01-03 2016-05-24 Globalfoundries Inc. Acid-strippable silicon-containing antireflective coating
US8962449B1 (en) * 2013-07-30 2015-02-24 Micron Technology, Inc. Methods for processing semiconductor devices
US9388114B2 (en) * 2013-08-02 2016-07-12 Eastman Chemical Company Compositions including an alkyl 3-hydroxybutyrate
US10025191B2 (en) * 2014-02-26 2018-07-17 Nissan Chemical Industries, Ltd. Polymer-containing coating liquid applied to resist pattern
US9123656B1 (en) 2014-05-13 2015-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Organosilicate polymer mandrel for self-aligned double patterning process
JP6250514B2 (ja) * 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法
CN109694594B (zh) * 2018-11-14 2021-01-01 东莞南玻太阳能玻璃有限公司 一种高增透耐脏污减反射镀膜液及其制备方法及太阳能光伏电池封装玻璃

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JP4355943B2 (ja) 2003-10-03 2009-11-04 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
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US7678529B2 (en) * 2005-11-21 2010-03-16 Shin-Etsu Chemical Co., Ltd. Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method

Also Published As

Publication number Publication date
EP1788012A1 (en) 2007-05-23
EP1788012B1 (en) 2009-04-08
KR20070053633A (ko) 2007-05-25
DE602006006135D1 (de) 2009-05-20
TW200732383A (en) 2007-09-01
KR101225417B1 (ko) 2013-01-22
US20070117252A1 (en) 2007-05-24
US7910283B2 (en) 2011-03-22

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