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TWI366919B - Structure of solar cell and its production method - Google Patents

Structure of solar cell and its production method

Info

Publication number
TWI366919B
TWI366919B TW097136116A TW97136116A TWI366919B TW I366919 B TWI366919 B TW I366919B TW 097136116 A TW097136116 A TW 097136116A TW 97136116 A TW97136116 A TW 97136116A TW I366919 B TWI366919 B TW I366919B
Authority
TW
Taiwan
Prior art keywords
solar cell
production method
solar
production
cell
Prior art date
Application number
TW097136116A
Other languages
English (en)
Other versions
TW201013946A (en
Inventor
Kaisheng Chang
Naitien Ou
Tienszu Chen
Original Assignee
Gintech Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gintech Energy Corp filed Critical Gintech Energy Corp
Priority to TW097136116A priority Critical patent/TWI366919B/zh
Priority to JP2009008954A priority patent/JP2010074123A/ja
Priority to EP09152642A priority patent/EP2172978A3/en
Priority to US12/388,037 priority patent/US20100071754A1/en
Publication of TW201013946A publication Critical patent/TW201013946A/zh
Application granted granted Critical
Publication of TWI366919B publication Critical patent/TWI366919B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
TW097136116A 2008-09-19 2008-09-19 Structure of solar cell and its production method TWI366919B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW097136116A TWI366919B (en) 2008-09-19 2008-09-19 Structure of solar cell and its production method
JP2009008954A JP2010074123A (ja) 2008-09-19 2009-01-19 ソーラバッテリのパネル構造およびパネル電極の製造方法
EP09152642A EP2172978A3 (en) 2008-09-19 2009-02-12 Structure of solar cell panel and manufacturing method of electrode of solar cell panel
US12/388,037 US20100071754A1 (en) 2008-09-19 2009-02-18 Structure of solar cell panel and manufacturing method of electrode of solar cell panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097136116A TWI366919B (en) 2008-09-19 2008-09-19 Structure of solar cell and its production method

Publications (2)

Publication Number Publication Date
TW201013946A TW201013946A (en) 2010-04-01
TWI366919B true TWI366919B (en) 2012-06-21

Family

ID=41664870

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097136116A TWI366919B (en) 2008-09-19 2008-09-19 Structure of solar cell and its production method

Country Status (4)

Country Link
US (1) US20100071754A1 (zh)
EP (1) EP2172978A3 (zh)
JP (1) JP2010074123A (zh)
TW (1) TWI366919B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI438923B (zh) * 2008-07-30 2014-05-21 Epistar Corp 光電元件製造方法
WO2010019674A1 (en) * 2008-08-13 2010-02-18 E. I. Du Pont De Nemours And Company Multi-element metal powders for silicon solar cells
US20100037941A1 (en) * 2008-08-13 2010-02-18 E. I. Du Pont De Nemours And Company Compositions and processes for forming photovoltaic devices
US8294024B2 (en) 2008-08-13 2012-10-23 E I Du Pont De Nemours And Company Processes for forming photovoltaic devices
US8710355B2 (en) 2008-12-22 2014-04-29 E I Du Pont De Nemours And Company Compositions and processes for forming photovoltaic devices
TWI435454B (zh) 2010-10-25 2014-04-21 Au Optronics Corp 太陽能電池
KR101161095B1 (ko) * 2010-12-08 2012-06-29 현대중공업 주식회사 태양전지의 전면전극 형성방법
TW201310667A (zh) * 2011-08-17 2013-03-01 Epistar Corp 太陽能電池
SG11201402547QA (en) * 2011-11-23 2014-06-27 Imec Method for forming metal silicide layers
FR3011982B1 (fr) * 2013-10-15 2017-05-12 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique
US9653638B2 (en) 2013-12-20 2017-05-16 Sunpower Corporation Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region
US10551165B2 (en) * 2015-05-01 2020-02-04 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5405806A (en) * 1994-03-29 1995-04-11 Motorola Inc. Method for forming a metal silicide interconnect in an integrated circuit
US6586320B2 (en) * 2000-04-14 2003-07-01 Stmicroelectronics, Inc. Graded/stepped silicide process to improve mos transistor
JP4118187B2 (ja) * 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
US20070148336A1 (en) * 2005-11-07 2007-06-28 Robert Bachrach Photovoltaic contact and wiring formation
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization
DE102006040352B3 (de) * 2006-08-29 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens
US20090139568A1 (en) * 2007-11-19 2009-06-04 Applied Materials, Inc. Crystalline Solar Cell Metallization Methods

Also Published As

Publication number Publication date
EP2172978A3 (en) 2010-12-08
EP2172978A2 (en) 2010-04-07
US20100071754A1 (en) 2010-03-25
TW201013946A (en) 2010-04-01
JP2010074123A (ja) 2010-04-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees