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TWI366971B - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
TWI366971B
TWI366971B TW097116342A TW97116342A TWI366971B TW I366971 B TWI366971 B TW I366971B TW 097116342 A TW097116342 A TW 097116342A TW 97116342 A TW97116342 A TW 97116342A TW I366971 B TWI366971 B TW I366971B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor
circuit
integrated
Prior art date
Application number
TW097116342A
Other languages
English (en)
Other versions
TW200922094A (en
Inventor
Kwan-Weon Kim
Jun-Ho Lee
Kun-Woo Park
Chang-Kyu Choi
Yong-Ju Kim
Sung-Woo Han
Jun-Woo Lee
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070114970A external-priority patent/KR100907009B1/ko
Priority claimed from KR1020070117092A external-priority patent/KR100907010B1/ko
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200922094A publication Critical patent/TW200922094A/zh
Application granted granted Critical
Publication of TWI366971B publication Critical patent/TWI366971B/zh

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00369Modifications for compensating variations of temperature, supply voltage or other physical parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
TW097116342A 2007-11-12 2008-05-02 Semiconductor integrated circuit TWI366971B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070114970A KR100907009B1 (ko) 2007-11-12 2007-11-12 반도체 집적 회로
KR1020070117092A KR100907010B1 (ko) 2007-11-16 2007-11-16 반도체 집적 회로

Publications (2)

Publication Number Publication Date
TW200922094A TW200922094A (en) 2009-05-16
TWI366971B true TWI366971B (en) 2012-06-21

Family

ID=40623139

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097116342A TWI366971B (en) 2007-11-12 2008-05-02 Semiconductor integrated circuit

Country Status (3)

Country Link
US (1) US8120416B2 (zh)
JP (2) JP5175597B2 (zh)
TW (1) TWI366971B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153771A (ja) * 2008-11-28 2010-07-08 Ricoh Co Ltd 情報処理装置及び画像形成装置
JP2010176742A (ja) * 2009-01-29 2010-08-12 Elpida Memory Inc 半導体装置及びデータ処理システム
KR101163220B1 (ko) * 2010-08-27 2012-07-06 에스케이하이닉스 주식회사 반도체 집적회로
JP2013110314A (ja) * 2011-11-22 2013-06-06 Elpida Memory Inc 半導体装置
CN103472404A (zh) * 2012-06-06 2013-12-25 鸿富锦精密工业(深圳)有限公司 接地检测电路
US9871506B2 (en) * 2014-04-16 2018-01-16 Qualcomm Incorporated Switchable decoupling capacitors
KR20160005404A (ko) * 2014-07-07 2016-01-15 에스케이하이닉스 주식회사 시스템
US20160371216A1 (en) * 2015-06-17 2016-12-22 Intel Corporation Capacitor interconnections and volume re-capture for voltage noise reduction

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型mis集積回路
JPH02111064A (ja) * 1988-10-20 1990-04-24 Nec Corp モノリシックicの静電破壊保護回路
JPH02113623A (ja) * 1988-10-21 1990-04-25 Sharp Corp 集積回路の静電気保護回路
JPH046868A (ja) * 1990-04-24 1992-01-10 Fujitsu Ltd 半導体集積回路
JPH05343603A (ja) 1992-06-09 1993-12-24 Nec Corp 半導体装置
KR960000515B1 (ko) 1992-07-31 1996-01-08 삼성전자주식회사 반도체 소자의 정전기 방지회로
JP3173327B2 (ja) 1995-06-16 2001-06-04 富士通株式会社 半導体装置
JP3229809B2 (ja) * 1995-08-31 2001-11-19 三洋電機株式会社 半導体装置
JP3667855B2 (ja) * 1996-01-25 2005-07-06 株式会社ルネサステクノロジ 半導体装置
KR100206604B1 (ko) 1996-06-29 1999-07-01 김영환 반도체 메모리 장치
JPH1023662A (ja) * 1996-07-03 1998-01-23 Mitsubishi Electric Corp サージ保護回路
JPH10135336A (ja) 1996-10-25 1998-05-22 Toshiba Corp 半導体集積回路装置、半導体集積回路装置が発するノイズの低減方法、半導体集積回路装置の内部電源システム
JP3693204B2 (ja) * 1996-12-06 2005-09-07 株式会社日立製作所 半導体集積回路装置
JP3730003B2 (ja) * 1997-02-18 2005-12-21 株式会社東芝 半導体装置
EP0976190A1 (en) 1997-04-16 2000-02-02 The Board Of Trustees Of The Leland Stanford Junior University Distributed esd protection device for high speed integrated circuits
JPH11103248A (ja) * 1997-07-30 1999-04-13 Matsushita Electric Ind Co Ltd 半導体集積回路
JPH11103428A (ja) * 1997-09-29 1999-04-13 Funai Electric Co Ltd 映像装置
US6597227B1 (en) * 2000-01-21 2003-07-22 Atheros Communications, Inc. System for providing electrostatic discharge protection for high-speed integrated circuits
JP4204737B2 (ja) * 2000-03-16 2009-01-07 株式会社ルネサステクノロジ 集積回路装置
KR20020002020A (ko) 2000-06-29 2002-01-09 박종섭 전원부의 cdm 및 emi 필터 회로
TW541791B (en) * 2001-07-23 2003-07-11 Via Tech Inc Signal transmission device and method to reduce power bounce
KR100464411B1 (ko) 2002-04-19 2005-01-03 삼성전자주식회사 분할된 디커플링 커패시터를 이용한 전원선 잡음 제거회로 및 이를 구비하는 반도체 장치
US7076757B2 (en) * 2003-02-27 2006-07-11 Nec Electronics Corporation Semiconductor integrated device and apparatus for designing the same
US6756834B1 (en) * 2003-04-29 2004-06-29 Pericom Semiconductor Corp. Direct power-to-ground ESD protection with an electrostatic common-discharge line
KR100576449B1 (ko) 2004-01-30 2006-05-08 주식회사 하이닉스반도체 내부전압 발생회로
JP4652703B2 (ja) * 2004-03-10 2011-03-16 ルネサスエレクトロニクス株式会社 半導体回路装置及びマルチ・チップ・パッケージ
KR20060023201A (ko) 2004-09-09 2006-03-14 삼성전자주식회사 반도체 장치의 멀티내부전압 발생회로
KR100801033B1 (ko) * 2005-11-03 2008-02-04 삼성전자주식회사 경계 스캔 회로를 이용하여 온 다이 터미네이션 회로를테스트할 수 있는 반도체 장치, 이를 구비한 테스트시스템, 및 테스트 방법

Also Published As

Publication number Publication date
US8120416B2 (en) 2012-02-21
TW200922094A (en) 2009-05-16
JP2009124672A (ja) 2009-06-04
US20090121786A1 (en) 2009-05-14
JP5175597B2 (ja) 2013-04-03
JP2013066232A (ja) 2013-04-11

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